WO2021155813A1 - 显示基板、及其制备方法、显示装置 - Google Patents

显示基板、及其制备方法、显示装置 Download PDF

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WO2021155813A1
WO2021155813A1 PCT/CN2021/075134 CN2021075134W WO2021155813A1 WO 2021155813 A1 WO2021155813 A1 WO 2021155813A1 CN 2021075134 W CN2021075134 W CN 2021075134W WO 2021155813 A1 WO2021155813 A1 WO 2021155813A1
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metal
layer
insulating layer
reflective structure
protrusion
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PCT/CN2021/075134
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English (en)
French (fr)
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刘李
魏俊波
卢鹏程
杨盛际
黄冠达
施蓉蓉
田元兰
张大成
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京东方科技集团股份有限公司
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Priority to US17/779,784 priority Critical patent/US20230345803A1/en
Publication of WO2021155813A1 publication Critical patent/WO2021155813A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to the field of display technology, in particular to a display substrate, a preparation method thereof, and a display device.
  • OLED Organic Light-Emitting Diodes
  • silicon-based OLED displays use monocrystalline silicon wafers as active drive backplanes, they have excellent characteristics such as high pixel density, high integration, small size, easy portability, good shock resistance, and ultra-low power consumption. It is currently researched in display technology. One of the hot spots.
  • the embodiment of the present disclosure provides a display substrate, which includes:
  • a wafer substrate having transistors
  • a metal reflective structure the metal reflective structure is located on the wafer substrate and electrically connected to the transistor, and the metal reflective structure has a protrusion protruding in a direction away from the wafer substrate;
  • the first insulating layer, the first insulating layer is located on the side of the metal reflective structure away from the wafer substrate, and the portion of the first insulating layer corresponding to the metal reflective structure is away from the metal reflective structure
  • the surface is flush with the top surface of the protrusion, so that the top surface of the protrusion is exposed, and the top surface of the protrusion is the surface of the protrusion facing away from the first insulating layer;
  • the transparent anode is located on the side of the first insulating layer away from the metal reflective structure, and the transparent anode is in contact with the top surface of the protrusion.
  • the thickness of the first insulating layer is equal to the height of the protrusion.
  • the above-mentioned display substrate provided by an embodiment of the present disclosure, it further includes: a metal wire located on the transistor and electrically connected to the transistor, and a second metal wire located on the metal wire.
  • a metal wire located on the transistor and electrically connected to the transistor, and a second metal wire located on the metal wire.
  • the second insulating layer has a via hole, and a connecting metal electrically connected to the metal wire is provided in the via hole.
  • the top surface of the connecting metal is higher than the The surface of the second insulating layer facing away from the metal wire, and the top surface of the connecting metal is the surface of the connecting metal facing away from the metal wire;
  • the metal reflective structure is located on the side of the second insulating layer away from the metal wire, and the metal reflective structure is electrically connected to the metal wire layer through the connecting metal, and the protrusions of the metal reflective structure are The connecting metal faces each other.
  • the connecting metal includes tungsten.
  • the transparent anode includes ITO.
  • the metal reflective structure includes a first metal layer, an aluminum metal layer, and a titanium nitride layer that are sequentially stacked, and the aluminum metal The layer is located on the side of the first metal layer away from the first insulating layer;
  • the first metal layer is a titanium metal layer that is a double-layer structure of a titanium metal layer and a titanium nitride layer that are stacked.
  • the metal wire includes a second metal layer, a metal aluminum layer, and a third metal layer that are sequentially stacked, and the metal aluminum layer Located on the side of the second metal layer away from the transistor;
  • the second metal layer includes a metal titanium layer, a titanium nitride layer, or a double-layer structure of a metal titanium layer and a titanium nitride layer;
  • the third metal layer includes a metal titanium layer, a titanium nitride layer, or a metal titanium layer Double layer structure with titanium nitride layer.
  • the above-mentioned display substrate provided by an embodiment of the present disclosure further includes: an organic light-emitting device and a transparent cathode sequentially located on the transparent anode.
  • embodiments of the present disclosure also provide a method for manufacturing a display substrate, including:
  • the metal reflective structure is electrically connected to the transistor, and the metal reflective structure has protrusions protruding in a direction away from the wafer substrate;
  • a first insulating layer is formed on the side of the metal reflective structure away from the wafer substrate, and the first insulating layer is processed through a patterning process, so that the first insulating layer corresponds to the metal reflective structure
  • the surface of the part facing away from the metal reflective structure is flush with the top surface of the protrusion, and the top surface of the protrusion is exposed, and the top surface of the protrusion is the protrusion facing away from the first insulating layer s surface;
  • a patterned transparent anode is formed on the side of the first insulating layer away from the metal reflective structure, and the transparent anode is in contact with the top surface of the protrusion.
  • the thickness of the first insulating layer formed is equal to the height of the protrusions ;
  • the processing of the first insulating layer through a patterning process specifically includes:
  • the method further includes:
  • the surface of the second insulating layer and the connecting metal is processed by a chemical mechanical polishing method to obtain that the top surface of the connecting metal is higher than the surface of the second insulating layer on the side facing away from the metal wire.
  • embodiments of the present disclosure also provide a display device, including any one of the above-mentioned display substrates.
  • Figures 1 to 4 are schematic diagrams of the changes of each film layer during the preparation process of the display substrate provided by the embodiments of the disclosure;
  • 5 and 6 are respectively a flowchart of a method for preparing a display substrate provided by an embodiment of the disclosure.
  • metal traces are provided on the top layer of the wafer on the silicon-based substrate, an anode structure is provided on the metal traces, an insulating layer is provided between the metal traces and the anode structure, and the metal traces It is connected with the anode structure through a connection via, and the connection via is provided with a connection metal.
  • the anode structure includes a metal reflective layer sequentially stacked on the insulating layer and a transparent anode layer electrically connected to the metal reflective layer.
  • the connecting metal is usually raised and higher than the surface of the insulating layer, the corresponding part of each film structure in the subsequent anode structure and the connecting metal will form a bump, that is, the unevenness caused by the connecting metal bump will be transferred to Transparent anode layer, resulting in unevenness of the transparent anode layer.
  • FIG. 4 is a schematic diagram of a partial film structure of a display substrate provided by an embodiment of the present disclosure.
  • a display substrate provided by an embodiment of the present disclosure includes:
  • the metal reflective structure 2 is located on the wafer substrate 1 and electrically connected to the transistor, and the metal reflective structure 2 has a protrusion 21 protruding in a direction away from the wafer substrate 1;
  • the first insulating layer 3, the first insulating layer 3 is located on the side of the metal reflective structure 2 away from the wafer substrate 1, and the corresponding part of the first insulating layer 3 and the metal reflective structure 2 is away from the surface of the metal reflective structure 2 and the protrusion 21
  • the top surface of the protrusion 21 is flush, so that the top surface of the protrusion 21 is exposed, and the top surface of the protrusion 21 refers to the surface of the protrusion 21 facing away from the first insulating layer 3;
  • the transparent anode 4 is located on the side of the first insulating layer 3 away from the metal reflective structure 2, and the transparent anode 4 is in contact with the top surface of the protrusion 21.
  • the wafer base may be divided into a plurality of sub-pixel units, and each sub-pixel unit has a transistor.
  • the direction perpendicular to the wafer substrate is the vertical direction
  • the side where the transistor is provided on the wafer substrate is the top side (or upper side) of the wafer substrate
  • the side where the transistor is provided on the wafer substrate A light-emitting unit is also provided.
  • the light-emitting unit specifically includes a metal reflective structure electrically connected to the transistor provided on the side of the wafer substrate where the transistor is provided.
  • the first insulating layer wherein the upper surface of the portion corresponding to the first insulating layer and the metal reflective structure is arranged flush with the top surface of the protrusion, and the top surface of the protrusion is exposed, so that the first insulating layer and the metal reflective structure
  • the surface of the corresponding part and the top surface of the protrusion form a flat surface.
  • the transparent anode When the transparent anode is arranged on the first insulating layer, the transparent anode is directly arranged on the first insulating layer, and is directly in contact and electrically connected with the top surface of the protrusion, so that The transparent anode can form a flat transparent anode without unevenness caused by the protrusions in the metal reflective structure, and alleviates the problem of the related art that the light-emitting area of the light-emitting unit is reduced due to the unevenness of the transparent anode.
  • the surface of the first insulating layer on the metal reflective structure and the surface corresponding to the metal reflective structure is flush with the top surface of the protrusion to form a flat surface, so that the transparent anode provided on the first insulating layer is not Affected by the bumps, the transparent anode is relatively flat, and the film layer has a simple structure, which does not increase the manufacturing process flow, and is beneficial to ensure that the light-emitting area of the light-emitting unit does not decrease.
  • the thickness of the first insulating layer 2 is equal to the height of the protrusion 21.
  • the first insulating layer when the first insulating layer is provided, in order to make the thickness of the first insulating layer equal to the height of the protrusion, during preparation, only the part of the first insulating layer coated on the top surface of the protrusion is removed.
  • the surface of the first insulating layer can be made flush with the top surface of the protrusion, and a flat surface is obtained before the transparent anode is arranged.
  • the preparation process is simple, which is beneficial to ensure that the surface of the first insulating layer is well flat, and thus is beneficial to ensure the transparent anode The flatness is good.
  • the structure of the wafer base 1 can be specifically divided into a plurality of sub-pixel units, and the top side of the wafer base 1 has transistors located on each sub-pixel unit and The metal wire 11 electrically connected to the transistor, and the second insulating layer 12 on the metal wire layer 11;
  • the second insulating layer 12 has a via hole, and a connecting metal 13 electrically connected to the metal wire 11 is provided in the via hole. Due to the necessary process of the preparation process, the surface of the second insulating layer 12 and the connecting metal 13 will be processed during the preparation process. The chemical and physical polishing process will cause the top surface of the connecting metal 13 to be higher than the surface of the second insulating layer 12 facing away from the metal wire 11 in the direction perpendicular to the wafer substrate, and the metal reflective structure 2 is arranged on the second insulating layer 12 On the layer 12, the metal reflective structure 2 is electrically connected to the connecting metal 13, and the portion of the metal reflective structure 2 opposite to the connecting metal 13 forms a bump.
  • the metal wire 11 may include a second metal layer, a metal aluminum layer, and a third metal layer that are stacked, and the metal aluminum layer is located on the side of the second metal layer facing away from the transistor.
  • the second metal layer may be titanium metal.
  • the third metal layer can be a metal titanium layer or a titanium nitride layer, or a double-layer structure of a metal titanium layer and a titanium nitride layer.
  • the connecting metal 13 may be tungsten or other metals, and this embodiment is not limited.
  • the transparent anode 4 may be ITO
  • the first insulating layer 3 may be silicon oxide
  • the second insulating layer 12 may be silicon oxide.
  • the metal reflective structure 2 may be a first metal layer, an aluminum metal layer, and a titanium nitride layer that are sequentially stacked, and the aluminum The metal layer is located on the side of the first metal layer away from the first insulating layer; wherein, the first metal layer can be a titanium metal layer, or the first metal layer can also be a double layer of a titanium metal layer and a titanium nitride layer.
  • the layer structure, the metal reflective structure 2 is arranged as a multilayer metal structure, which is beneficial to enhance the conductivity and light reflection performance of the metal reflective structure 2.
  • the light-emitting unit may further include an organic light-emitting device and a transparent cathode which are sequentially located on the transparent anode, so that the display substrate realizes a light-emitting function.
  • the embodiments of the present invention also provide a display device, including the above-mentioned display substrate provided by the embodiments of the present disclosure. Any product or component with a display function, such as a navigator.
  • the implementation of the display device can refer to the above-mentioned embodiment of the display substrate, and the repetitive parts will not be repeated.
  • an embodiment of the present disclosure also provides a method for manufacturing a display substrate, including:
  • Step S101 providing a wafer substrate 1 and forming transistors on the wafer substrate 1;
  • Step S102 forming a patterned metal reflective structure 2 on the wafer substrate 1.
  • the metal reflective structure 2 is electrically connected to the transistor, and the metal reflective structure 2 has protrusions 21 protruding in a direction away from the wafer substrate 1;
  • Step S103 forming a first insulating layer 3 on the side of the metal reflective structure 2 away from the wafer substrate 1, and processing the first insulating layer 3 through a patterning process, so that the first insulating layer 3 corresponds to the metal reflective structure 2
  • the surface of the part facing away from the metal reflective structure is flush with the top surface of the protrusion 21, and the top surface of the protrusion 21 is exposed;
  • step S104 a patterned transparent anode 4 is formed on the side of the first insulating layer 3 away from the metal reflective structure 2, and the transparent anode 4 is in contact with the top surface of the protrusion 21.
  • step S103 when the first insulating layer is formed, the thickness of the first insulating layer is equal to the height of the protrusion along the direction perpendicular to the wafer substrate, and then the patterning process is performed to expose the first insulating layer During etching, only the part of the first insulating layer on the top surface of the protrusions is removed, that is, the upper surface of the first insulating layer can be level with the top surface of the protrusions, and a flat surface is obtained before the transparent anode is formed.
  • step S101 after forming the transistor on the wafer substrate 1, as shown in FIG. 6, the method may further include:
  • Step S201 forming a patterned metal wire electrically connected to the transistor on the side of the transistor away from the wafer substrate;
  • Step S202 forming a second insulating layer on the side of the metal wire away from the wafer substrate, forming a via hole in the second insulating layer, and forming a connecting metal in the via hole;
  • Step S203 Use a chemical mechanical polishing method to process the surface of the second insulating layer and the connecting metal. Since the polishing rates of the second insulating layer and the connecting metal are different, the polishing rate of the second insulating layer is greater than the polishing rate of the connecting metal. After that, the top surface of the connecting metal will be higher than the surface of the second insulating layer, that is, the connecting metal will protrude from the surface of the second insulating layer, which in turn will lead to the formation of bumps in the metal reflective structure that is subsequently prepared corresponding to the connecting metal.
  • the method for preparing the above-mentioned display substrate provided by the embodiment of the present disclosure may further include sequentially forming an organic light-emitting device and a transparent cathode on the transparent anode, so that the display substrate realizes the light-emitting function.

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Abstract

一种显示基板、及其制备方法、显示装置，该显示基板包括：晶圆基底（1）；金属反射结构（2），金属反射结构位于晶圆基底上、且与晶体管电连接，金属反射结构具有朝向背离晶圆基底方向凸出的凸起（21）；第一绝缘层（3），第一绝缘层位于金属反射结构背离晶圆基底的一侧，且第一绝缘层与金属反射结构对应的部位背离金属反射结构的表面与凸起的顶面平齐；透明阳极（4），透明阳极位于第一绝缘层背离金属反射结构的一侧。该显示基板中，金属反射结构上的第一绝缘层的中与金属反射结构对应的表面与凸起的顶面平齐，使设置在第一绝缘层上的透明阳极不受凸起的影响，使透明阳极比较平整。

Description

显示基板、及其制备方法、显示装置
相关申请的交叉引用
本公开要求在2020年02月05日提交中国专利局、申请号为202010080873.3、申请名称为“一种硅基OLED显示面板、及其制备方法、显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，特别涉及一种显示基板、及其制备方法、显示装置。
背景技术
OLED(Organic Light-Emitting Diodes)显示技术作为新型的显示技术，已广泛应用于智能手表、手机、平板电脑、显示器等领域。硅基OLED显示因为采用单晶硅晶圆作为有源驱动背板，具有高像素密度、高度集成、体积小、易于携带、抗震性能好、超低功耗等优异特性，是目前显示技术研究的热点之一。
发明内容
本公开实施例提供了一种显示基板，其中，包括：
晶圆基底，所述晶圆基底具有晶体管；
金属反射结构，所述金属反射结构位于所述晶圆基底上、且与所述晶体管电连接，所述金属反射结构具有朝向背离所述晶圆基底方向凸出的凸起；
第一绝缘层，所述第一绝缘层位于所述金属反射结构背离所述晶圆基底的一侧，且所述第一绝缘层与所述金属反射结构对应的部位背离所述金属反射结构的表面与所述凸起的顶面平齐，以使所述凸起的顶面裸露，所述凸起的顶面为所述凸起背离所述第一绝缘层的表面；
透明阳极，所述透明阳极位于所述第一绝缘层背离所述金属反射结构的一侧，且所述透明阳极与所述凸起的顶面接触连接。
在一种可能的实现方式中，在本公开实施例提供的上述显示基板中，沿垂直于所述晶圆基底的方向，所述第一绝缘层的厚度与所述凸起的高度相等。
在一种可能的实现方式中，在本公开实施例提供的上述显示基板中，还包括：位于所述晶体管之上且与所述晶体管电连接的金属导线，以及位于所述金属导线上的第二绝缘层；
所述第二绝缘层具有过孔，所述过孔内设有与所述金属导线电连接的连接金属，沿垂直于所述晶圆基底的方向，所述连接金属的顶面高于所述第二绝缘层背离所述金属导线一侧的表面，所述连接金属的顶面为所述连接金属背离所述金属导线的表面；
所述金属反射结构位于所述第二绝缘层背离所述金属导线的一侧，且所述金属反射结构通过所述连接金属与所述金属导线层电连接，所述金属反射结构的凸起与所述连接金属相对。
在一种可能的实现方式中，在本公开实施例提供的上述显示基板中，所述连接金属包括钨。
在一种可能的实现方式中，在本公开实施例提供的上述显示基板中，所述透明阳极包括ITO。
在一种可能的实现方式中，在本公开实施例提供的上述显示基板中，所述金属反射结构包括依次叠置的第一金属层、铝金属层和氮化钛层，且所述铝金属层位于所述第一金属层背离所述第一绝缘层的一侧；
所述第一金属层为金属钛层为层叠设置的金属钛层与氮化钛层的双层结构。
在一种可能的实现方式中，在本公开实施例提供的上述显示基板中，所述金属导线包括依次叠置的第二金属层、金属铝层和第三金属层，且所述金属铝层位于所述第二金属层背离所述晶体管的一侧；
所述第二金属层包括金属钛层、氮化钛层、或金属钛层与氮化钛层的双 层结构；所述第三金属层包括金属钛层、氮化钛层、或金属钛层与氮化钛层的双层结构。
在一种可能的实现方式中，在本公开实施例提供的上述显示基板中，还包括：依次位于所述透明阳极之上的有机发光器件和透明阴极。
另一方面，本公开实施例还提供了一种显示基板的制备方法，包括：
提供一晶圆基底，在所述晶圆基底形成晶体管；
在所述晶圆基底上形成图案化的金属反射结构，所述金属反射结构与所述晶体管电连接，且所述金属反射结构具有朝向背离所述晶圆基底方向凸出的凸起；
在所述金属反射结构背离所述晶圆基底的一侧形成第一绝缘层，且通过构图工艺对所述第一绝缘层进行处理，以使所述第一绝缘层与所述金属反射结构对应的部位背离所述金属反射结构的表面与所述凸起的顶面平齐，且裸露所述凸起的顶面，所述凸起的顶面为所述凸起背离所述第一绝缘层的表面；
在所述第一绝缘层背离所述金属反射结构的一侧形成图案化的透明阳极，所述透明阳极与所述凸起的顶面接触连接。
在一种可能的实现方式中，在本公开实施例提供的上述制备方法中，沿垂直于所述晶圆基底的方向，形成的所述第一绝缘层的厚度与所述凸起的高度相等；
所述通过构图工艺对所述第一绝缘层进行处理，具体包括：
通过构图工艺仅去除所述第一绝缘层中在所述凸起顶面上的部分。
在一种可能的实现方式中，在本公开实施例提供的上述制备方法中，在所述晶圆基底形成晶体管之后，还包括：
在所述晶体管背离所述晶圆基底的一侧形成与所述晶体管电连接且图案化的金属导线；
在所述金属导线背离所述晶圆基底的一侧形成第二绝缘层，并在所述第二绝缘层中形成过孔，在所述过孔中形成连接金属；
采用化学机械研磨法对所述第二绝缘层和所述连接金属的表面进行处理 得到所述连接金属的顶面高于所述第二绝缘层背离所述金属导线一侧的表面。
另一方面，本公开实施例还提供了一种显示装置，包括上述任意一种显示基板。
附图说明
图1-图4分别为本公开实施例提供的显示基板的制备过程中各膜层变化示意图；
图5和图6分别为本公开实施例提供的显示基板的制备方法流程图。
具体实施方式
相关硅基OLED结构中，在硅基衬底上的晶圆顶层设置有金属走线，金属走线之上设有阳极结构，金属走线与阳极结构之间设有绝缘层，并且金属走线与阳极结构之间通过连接过孔连接，连接过孔中设置有连接金属。
在制备加工过程中，由于化学机械研磨对绝缘层和连接金属之的研磨速率不同，对绝缘层的研磨速率高于对连接金属的研磨速率，导致连接金属通常会凸起而高于绝缘层表面。而阳极结构包括依次叠置绝缘层上的金属反射层、以及与金属反射层电连接的透明阳极层。由于连接金属通常会凸起而高于绝缘层表面，因此，后续阳极结构中的每个膜层结构与连接金属对应的部位会形成凸起，即连接金属凸起导致的不平整问题会转移到透明阳极层，从而造成透明阳极层不平整。
相关技术中，通常解决此问题的方法是将连接金属排列在像素区边缘位置，并用像素定义层PDL(Pixel Definition Layer)覆盖住不平整区域，但此解决方法会导致工艺步骤的增加，同时还会导致发光面积的减小。因此，如何解决连接金属凸起导致的透明阳极层不平整的问题是目前亟需解决的问题。
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做 出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
图4为本公开实施例提供的一种显示基板的局部膜层结构示意图，参考图4所示，本公开实施例提供的一种显示基板，包括：
晶圆基底1，晶圆基底1具有晶体管；
金属反射结构2，金属反射结构2位于晶圆基底1上、且与晶体管电连接，金属反射结构2具有朝向背离晶圆基底1方向凸出的凸起21；
第一绝缘层3，第一绝缘层3位于金属反射结构2背离晶圆基底1的一侧，且第一绝缘层3与金属反射结构2对应的部位背离金属反射结构2的表面与凸起21的顶面平齐，以使凸起21的顶面裸露，凸起21的顶面指的是凸起21背离第一绝缘层3的表面；
透明阳极4，透明阳极4位于第一绝缘层3背离金属反射结构2的一侧，且透明阳极4与凸起21的顶面接触连接。
具体地，在本公开实施例提供的上述显示基板中，晶圆基底上可以划分为多个子像素单元，每个子像素单元中均具有晶体管。为便于说明，以垂直于晶圆基底的方向为竖直方向，以晶圆基底上设置晶体管的一侧为的晶圆基底的顶侧(或者上侧)，在晶圆基底设置晶体管的一侧还设置有发光单元，发光单元具体包括在晶圆基底设置晶体管的一侧设置的与晶体管电连接的金属反射结构，金属反射结构背离晶圆基底的一侧具有凸起，在金属反射结构上面形成第一绝缘层，其中，设置第一绝缘层与金属反射结构对应的部位的上表面与凸起的顶面平齐，且使凸起的顶面裸露，使第一绝缘层中与金属反射结构对应部位的表面与凸起的顶面形成一平坦的表面，则在第一绝缘层上设置透明阳极时，透明阳极直接设置在第一绝缘层上，且直接与凸起顶面接触电连接，使透明阳极可以形成平坦的透明阳极，不会有受金属反射结构中凸起的影响而导致不平整的问题，缓解了相关技术中由于透明阳极不平整而导致发光单元的发光面积减小的问题。
即在上述显示基板中，金属反射结构上的第一绝缘层与金属反射结构对应的表面与凸起的顶面平齐以形成平坦的表面，可以使设置在第一绝缘层上 的透明阳极不受凸起的影响，使透明阳极比较平整，且膜层设置结构简单，不会增加制备工艺流程，有利于保证发光单元的发光面积不会减小。
可选地，在本公开实施例提供的上述显示基板中，如图4所示，沿垂直于晶圆基底1的方向，第一绝缘层2的厚度与凸起21的高度相等。
具体地，在设置第一绝缘层时，为了使第一绝缘层的厚度与凸起的高度相等，则在制备时，只要将第一绝缘层涂覆在凸起顶面上的部分去除，就可以使第一绝缘层的表面与凸起的顶面平齐，在设置透明阳极之前得到平整的表面，制备工艺简单，有利于保证第一绝缘层的表面平整性良好，进而有利于保证透明阳极的平整度良好。
可选地，在本公实施例提供的上述显示基板中，晶圆基底1的结构具体可以分为多个子像素单元，且晶圆基底1的顶侧具有位于各子像素单元的晶体管之上且与晶体管电连接的金属导线11，以及位于金属导线层11上的第二绝缘层12；
第二绝缘层12具有过孔，过孔内设有与金属导线11电连接的连接金属13，由于制备过程的必要工艺，在制备过程中会对第二绝缘层12和连接金属13的表面进行化学物理研磨处理，则会导致在垂直于晶圆基底的方向上，连接金属13的顶面高于第二绝缘层12背离金属导线11一侧的表面，而金属反射结构2设置在第二绝缘层12之上，金属反射结构2与连接金属13电连接，且金属反射结构2与连接金属13相对的部位形成凸起。
其中，上述金属导线11可以包括层叠设置的第二金属层、金属铝层和第三金属层，且金属铝层位于第二金属层背离晶体管的一侧，其中，第二金属层可以为金属钛层或氮化钛层，或者金属钛层与氮化钛层的双层结构；第三金属层可以为金属钛层或氮化钛层，或者金属钛层与氮化钛层的双层结构。
可选地，在本公实施例提供的上述显示基板中，连接金属13可以为钨，也可以是其它金属，本实施例不做局限。另外，透明阳极4可以为ITO，第一绝缘层3可以为氧化硅，第二绝缘层12可以为氧化硅。
具体地，在本公实施例提供的上述显示基板中，针对金属反射结构2的 结构设置，金属反射结构2可以为依次叠置的第一金属层、铝金属层和氮化钛层，且铝金属层位于第一金属层背离第一绝缘层的一侧；其中，第一金属层可以为金属钛层，或者，第一金属层也可为层叠设置的金属钛层与氮化钛层的双层结构，金属反射结构2设置为多层金属结构，有利于增强金属反射结构2的导电性以及光反射性能。
具体地，在本公实施例提供的上述显示基板中，发光单元还可以包括依次位于透明阳极之上的有机发光器件和透明阴极，以使显示基板实现发光功能。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本公开实施例提供的上述显示基板，该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置的实施可以参见上述显示基板的实施例，重复之处不再赘述。
基于同一发明构思，结合图1、图2、图3以及图4，如图5所示，本公开实施例还提供了一种显示基板的制备方法，包括：
步骤S101、提供一晶圆基底1，在晶圆基底1上形成晶体管；
步骤S102、在晶圆基底1上形成图案化的金属反射结构2，金属反射结构2与晶体管电连接，且金属反射结构2具有朝向背离晶圆基底1方向凸出的凸起21；
步骤S103、在金属反射结构2背离晶圆基底1的一侧形成第一绝缘层3，且通过构图工艺对第一绝缘层3进行处理，以使第一绝缘层3与金属反射结构2对应的部位背离金属反射结构的表面与凸起21的顶面平齐，且裸露凸起21的顶面；
步骤S104、在第一绝缘层3背离金属反射结构2的一侧形成图案化的透明阳极4，透明阳极4与凸起21的顶面接触连接。
具体地，在步骤S103中，形成第一绝缘层时，沿垂直于晶圆基底的方向，使第一绝缘层的厚度与凸起的高度相等，则在进行构图工艺对第一绝缘层进行曝光、刻蚀时，仅去除第一绝缘层中在凸起顶面上的部分，即可以使第一 绝缘层的上表面与凸起顶面平齐，在形成透明阳极之前得到平整的表面。
具体地，在步骤S101中，在晶圆基底1上形成晶体管之后，如图6所示，还可以包括：
步骤S201、在晶体管背离晶圆基底的一侧形成与晶体管电连接且图案化的金属导线；
步骤S202、在金属导线背离晶圆基底的一侧形成第二绝缘层，并在第二绝缘层中形成过孔，在过孔中形成连接金属；
步骤S203、采用化学机械研磨法对第二绝缘层和连接金属的表面进行处理，由于第二绝缘层与连接金属的研磨速率不相同，第二绝缘层的研磨速率大于连接金属的研磨速率，研磨之后连接金属的顶面会高于第二绝缘层的表面，即连接金属会凸出第二绝缘层的表面，进而会导致后续制备的金属反射结构中与连接金属对应的部位形成凸起。
具体地，本公开实施例提供的上述显示基板的制备方法，还可以包括在透明阳极之上依次形成有机发光器件和透明阴极，使显示基板实现发光功能。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (12)

  1. 一种显示基板，其中，包括：
    晶圆基底，所述晶圆基底具有晶体管；
    金属反射结构，所述金属反射结构位于所述晶圆基底上、且与所述晶体管电连接，所述金属反射结构具有朝向背离所述晶圆基底方向凸出的凸起；
    第一绝缘层，所述第一绝缘层位于所述金属反射结构背离所述晶圆基底的一侧，且所述第一绝缘层与所述金属反射结构对应的部位背离所述金属反射结构的表面与所述凸起的顶面平齐，以使所述凸起的顶面裸露，所述凸起的顶面为所述凸起背离所述第一绝缘层的表面；
    透明阳极，所述透明阳极位于所述第一绝缘层背离所述金属反射结构的一侧，且所述透明阳极与所述凸起的顶面接触连接。
  2. 根据权利要求1所述的显示基板，其中，沿垂直于所述晶圆基底的方向，所述第一绝缘层的厚度与所述凸起的高度相等。
  3. 根据权利要求1所述的显示基板，其中，还包括：位于所述晶体管之上且与所述晶体管电连接的金属导线，以及位于所述金属导线上的第二绝缘层；
    所述第二绝缘层具有过孔，所述过孔内设有与所述金属导线电连接的连接金属，沿垂直于所述晶圆基底的方向，所述连接金属的顶面高于所述第二绝缘层背离所述金属导线一侧的表面，所述连接金属的顶面为所述连接金属背离所述金属导线的表面；
    所述金属反射结构位于所述第二绝缘层背离所述金属导线的一侧，且所述金属反射结构通过所述连接金属与所述金属导线层电连接，所述金属反射结构的凸起与所述连接金属相对。
  4. 根据权利要求3所述的显示基板，其中，所述连接金属包括钨。
  5. 根据权利要求1所述的显示基板，其中，所述透明阳极包括ITO。
  6. 根据权利要求1所述的显示基板，其中，所述金属反射结构包括依次 叠置的第一金属层、铝金属层和氮化钛层，且所述铝金属层位于所述第一金属层背离所述第一绝缘层的一侧；
    所述第一金属层为金属钛层为层叠设置的金属钛层与氮化钛层的双层结构。
  7. 根据权利要求3所述的显示基板，其中，所述金属导线包括依次叠置的第二金属层、金属铝层和第三金属层，且所述金属铝层位于所述第二金属层背离所述晶体管的一侧；
    所述第二金属层包括金属钛层、氮化钛层、或金属钛层与氮化钛层的双层结构；所述第三金属层包括金属钛层、氮化钛层、或金属钛层与氮化钛层的双层结构。
  8. 根据权利要求1-7任一项所述的显示基板，其中，还包括：依次位于所述透明阳极之上的有机发光器件和透明阴极。
  9. 一种显示基板的制备方法，其中，包括：
    提供一晶圆基底，在所述晶圆基底形成晶体管；
    在所述晶圆基底上形成图案化的金属反射结构，所述金属反射结构与所述晶体管电连接，且所述金属反射结构具有朝向背离所述晶圆基底方向凸出的凸起；
    在所述金属反射结构背离所述晶圆基底的一侧形成第一绝缘层，且通过构图工艺对所述第一绝缘层进行处理，以使所述第一绝缘层与所述金属反射结构对应的部位背离所述金属反射结构的表面与所述凸起的顶面平齐，且裸露所述凸起的顶面，所述凸起的顶面为所述凸起背离所述第一绝缘层的表面；
    在所述第一绝缘层背离所述金属反射结构的一侧形成图案化的透明阳极，所述透明阳极与所述凸起的顶面接触连接。
  10. 根据权利要求9所述的制备方法，其中，沿垂直于所述晶圆基底的方向，形成的所述第一绝缘层的厚度与所述凸起的高度相等；
    所述通过构图工艺对所述第一绝缘层进行处理，具体包括：
    通过构图工艺仅去除所述第一绝缘层中在所述凸起顶面上的部分。
  11. 根据权利要求9所述的制备方法，其中，在所述晶圆基底形成晶体管之后，还包括：
    在所述晶体管背离所述晶圆基底的一侧形成与所述晶体管电连接且图案化的金属导线；
    在所述金属导线背离所述晶圆基底的一侧形成第二绝缘层，并在所述第二绝缘层中形成过孔，在所述过孔中形成连接金属；
    采用化学机械研磨法对所述第二绝缘层和所述连接金属的表面进行处理得到所述连接金属的顶面高于所述第二绝缘层背离所述金属导线一侧的表面。
  12. 一种显示装置，其中，包括如权利要求1-8任一项所述的显示基板。
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