WO2021145269A1 - 導電性ペースト、電極及びチップ抵抗器 - Google Patents

導電性ペースト、電極及びチップ抵抗器 Download PDF

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Publication number
WO2021145269A1
WO2021145269A1 PCT/JP2021/000345 JP2021000345W WO2021145269A1 WO 2021145269 A1 WO2021145269 A1 WO 2021145269A1 JP 2021000345 W JP2021000345 W JP 2021000345W WO 2021145269 A1 WO2021145269 A1 WO 2021145269A1
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Prior art keywords
electrode
conductive paste
weight
glass frit
alloy particles
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PCT/JP2021/000345
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English (en)
French (fr)
Japanese (ja)
Inventor
喜昭 吉井
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ナミックス株式会社
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Priority to CN202180009442.0A priority Critical patent/CN114930467A/zh
Priority to JP2021571163A priority patent/JP7687687B2/ja
Priority to KR1020227026685A priority patent/KR102823944B1/ko
Publication of WO2021145269A1 publication Critical patent/WO2021145269A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Definitions

  • the present invention relates to, for example, a conductive paste used for forming electrodes of electronic components.
  • the present invention also relates to an electrode formed by using the conductive paste and a chip resistor having the electrode.
  • FIG. 1 shows an example of the cross-sectional structure of the chip resistor 100.
  • the chip resistor 100 has a rectangular alumina substrate 102, and a resistor 104 and a take-out electrode 106 for extracting electricity from the resistor 104 are formed on the upper surface of the alumina substrate 102. Further, on the lower surface of the alumina substrate 102, a lower surface electrode 108 for mounting the chip resistor 100 on the substrate is formed. Further, a connection electrode 110 for connecting the take-out electrode 106 and the lower surface electrode 108 is formed on the end surface of the alumina substrate 102.
  • the take-out electrode 106 and the lower surface electrode 108 are formed by applying a conductive paste to the upper surface and the lower surface of the alumina substrate 102 by printing and then firing them.
  • a nickel plating film 112 and a tin plating film 114 are generally formed on the take-out electrode 106, the bottom electrode 108, and the connection electrode 110.
  • the take-out electrode 106 and the bottom electrode 108 have different required characteristics, they are generally formed by using different conductive pastes. For example, a conductive paste having good matching with the resistor 104 is used for forming the take-out electrode 106. Further, when the resistance value of the resistor 104 is low, the resistance value of the take-out electrode 106 is also required to be low. Therefore, a conductive paste capable of forming a low resistance electrode is used for forming the take-out electrode 106.
  • Fossil fuels are being burned in automobiles and thermal power plants, and a large amount of sulfur oxides are emitted into the atmosphere. Further, in sewage treatment plants and waste treatment plants, sulfur is reduced by anaerobic bacteria to generate hydrogen sulfide. Therefore, sulfur-containing components such as sulfur oxides and hydrogen sulfide are present in the atmosphere.
  • the sulfur component in the atmosphere reaches the surface of silver, the sulfur component adheres to the surface of silver and reacts with silver to become silver sulfide.
  • an electrode made of silver as a main material such as an electrode of a chip resistor
  • the same reaction occurs, so that the silver inside the electrode may become silver sulfide. If silver sulfide is generated inside the electrode, the electrode may be broken. Therefore, a device such as a chip resistor having an electrode made of silver may malfunction. Such a phenomenon is called disconnection due to sulfurization.
  • an electrode with high sulfurization resistance is required for the silver-based electrode used in devices such as chip resistors.
  • an object of the present invention is to provide a conductive paste having high sulfurization resistance, low resistance, and capable of forming an electrode at a relatively low cost.
  • the present invention has the following configuration.
  • (Structure 1) Configuration 1 of the present invention comprises (A) alloy particles containing Ag and Sn, and (B) Glass frit and (C) Containing with a thermoplastic resin, (A) A conductive paste in which the weight ratio of Sn in the alloy particles is less than 10% by weight.
  • (Structure 2) Configuration 2 of the present invention is the conductive paste of Configuration 1 in which the weight ratio of Ag in the alloy particles (A) is 50% by weight or more.
  • Configuration 3 of the present invention is the conductive paste of configuration 1 or 2, wherein the content of the glass frit (B) is 2 to 20 parts by weight with respect to 100 parts by weight of the alloy particles (A).
  • Constituent 4 of the present invention is the conductive paste according to any one of Constituents 1 to 3, further comprising (D) silica filler.
  • the glass frit (B) contains SiO 2 and TiO 2.
  • Configuration 6 of the present invention is an electrode obtained by firing any of the conductive pastes of configurations 1 to 5.
  • Configuration 7 of the present invention is a chip resistor having the electrode according to configuration 6.
  • FIG. 1 It is a schematic diagram which shows an example of the cross-sectional structure of a chip resistor.
  • the conductive paste of this embodiment contains (A) alloy particles, (B) glass frit, and (C) thermoplastic resin.
  • the conductive paste of the present embodiment can be preferably used to form an electrode of a device such as a chip resistor having an electrode made of silver as a material.
  • the conductive paste of the present embodiment contains (A) alloy particles.
  • the alloy particles (A) contain silver (Ag) and tin (Sn). Since the alloy particles (A) contain Sn, the sulfide of Ag can be suppressed. Therefore, by using the conductive paste of the present embodiment, it is possible to form an electrode having high sulfurization resistance.
  • the alloy particles (A) can contain metals other than Ag and Sn. However, in order to surely obtain an electrode having low electric resistance and high sulfurization resistance, it is preferable that the alloy particles (A) consist only of Ag and Sn.
  • alloy particles consist only of Ag and Sn means that metal other than Ag and Sn is intentionally not mixed as (A) metal particles, and it is unavoidable. It does not exclude the inclusion of metals other than Ag and Sn that are mixed with the target.
  • the alloy particles (A) can contain metals such as Zn, In, Al and Si as metals other than Ag and Sn as long as the effects of the present embodiment are not impaired.
  • the weight ratio of Sn in the alloy particles (A) is preferably less than 10% by weight. More specifically, the weight ratio of Sn in the alloy particles (A) is preferably 1% by weight or more and less than 10% by weight, and more preferably 1.5% by weight or more and 9% by weight or less. It is more preferably 4% by weight or more and 8% by weight or less, and particularly preferably 4% by weight or more and 8% by weight or less. If the weight ratio of Sn is too large, the electrical resistance as an electrode may become too high. Further, when the weight ratio of Sn is small, the improvement in sulfurization resistance may be small. In particular, when the weight ratio of Sn is less than 2% by weight, the sulfurization resistance may be easily deteriorated.
  • the weight ratio of Ag in the alloy particles (A) is preferably 50% by weight or more, more preferably 70% by weight or more, and more than 90% by weight. More preferred.
  • the electrical resistance of Ag is low compared to other metals. Therefore, when the weight ratio of Ag is in a predetermined range, an electrode having a relatively low electric resistance can be obtained.
  • the shape of the alloy particles (A) is not particularly limited, and for example, spherical, granular, flake-like and / or scaly alloy particles can be used.
  • the average particle size of the alloy particles (A) is preferably 0.1 ⁇ m to 10 ⁇ m, more preferably 0.1 ⁇ m to 7 ⁇ m, and most preferably 1 ⁇ m to 5 ⁇ m.
  • the average particle size referred to here means a volume-based median diameter (D50) obtained by a laser diffraction / scattering type particle size distribution measurement method.
  • the method for producing the alloy particles (A) is not particularly limited, and can be produced by, for example, a reduction method, a pulverization method, an electrolytic method, an atomizing method, a heat treatment method, or a combination thereof.
  • the flake-shaped alloy particles can be produced, for example, by crushing spherical or granular alloy particles with a ball mill or the like.
  • the conductive paste of the present embodiment includes (B) glass frit.
  • the glass frit (B) preferably contains SiO 2 and TiO 2.
  • the adhesion strength of the electrode obtained by firing the conductive paste to the substrate is improved.
  • the glass frit is not particularly limited, but a glass frit having a softening point of 300 ° C. or higher, more preferably a softening point of 400 to 900 ° C., and further preferably a softening point of 500 to 800 ° C. can be used.
  • the softening point of the glass frit can be measured using a thermogravimetric measuring device (for example, TG-DTA2000SA manufactured by BRUKER AXS).
  • glass frit examples include glass frit such as titanium borosilicate type (TiO 2 type) and barium borosilicate type.
  • glass frit examples include bismuth borosilicate, alkali metal borosilicate, alkaline earth metal borosilicate, zinc borosilicate, lead borosilicate, lead borate, lead silicate, and bismus borate.
  • glass frit such as system and zinc borate type. These glass frit can also be used by mixing two or more kinds.
  • the glass frit is preferably lead-free from the viewpoint of environmental consideration.
  • the glass frit preferably contains at least one selected from the group consisting of ZnO, BaO, Na 2 O, Ca O and Al 2 O 3.
  • the glass frit more preferably contains ZnO, BaO, Na 2 O and Al 2 O 3.
  • the average particle size of the glass frit is preferably 0.1 to 20 ⁇ m, more preferably 0.2 to 10 ⁇ m, and most preferably 0.5 to 5 ⁇ m.
  • the average particle size referred to here means a volume-based median diameter (D50) obtained by a laser diffraction / scattering type particle size distribution measurement method.
  • the content of (B) glass frit is preferably 1 to 20 parts by weight, preferably 1.5 to 15 parts by weight, based on 100 parts by weight of the alloy particles (A). More preferably, it is more preferably 2 to 10 parts by weight.
  • the content of the glass frit is less than this range, the adhesion of the electrode obtained by firing the conductive paste to the substrate is lowered.
  • the content of the glass frit is higher than this range, the resistance value of the electrode obtained by firing the conductive paste becomes high.
  • the content of the glass frit is relatively small, an electrode having low resistance can be obtained. Further, when the content of the glass frit is relatively large, an electrode having excellent chemical resistance can be obtained.
  • Chemical resistance is a characteristic required because a plating pretreatment is required when a plating film is formed on the surface of the electrode.
  • the pre-plating treatment is performed for the purpose of removing contaminants from the surface of the electrode, activating the surface of the electrode, and making the surface of the electrode a clean state suitable for plating.
  • Pollutants to be removed can be broadly divided into organic and inorganic.
  • the pretreatment step is not a single step of removing all contaminants. For example, organic substances are removed in a process using an alkaline cleaning agent. Inorganic substances are removed in a process using an acid-based cleaning agent. Therefore, the electrodes are required to have high chemical resistance.
  • the glass frit softens as the temperature rises, and silver sintering progresses. If the glass frit content is high, the glass component may be extruded onto the surface of the sintered body. In that case, the surface of the sintered body may be covered with a glass component.
  • the sintered body By forming a nickel plating film on the surface of the sintered body, not only can the diffusion of tin from the tin plating film to the electrodes be suppressed, but also when the surface of the sintered body is covered with a glass component, the sintered body It is possible to improve the conductivity. Since the alloy particles (A) of the present embodiment are alloy particles containing Ag and Sn, their sinterability is lower than that of Ag particles.
  • Thermoplastic Resin contains (C) a thermoplastic resin.
  • Thermoplastic resin connects silver powders together in a conductive paste.
  • thermoplastic resin one that is burnt down during firing of the conductive paste can be used.
  • thermoplastic resin for example, cellulose-based resins such as ethyl cellulose and nitrocellulose, acrylic resins, alkyd resins, saturated polyester resins, butyral resins, polyvinyl alcohol, hydroxypropyl cellulose and the like can be used. These resins can be used alone or in admixture of two or more.
  • the content of the (C) thermoplastic resin is preferably 0.5 to 40 parts by weight, more preferably 1 to 35 parts by weight, based on 100 parts by weight of the alloy particles (A).
  • the content of the thermoplastic resin in the conductive paste is within the above range, the coating property of the conductive paste on the substrate and the paste leveling property are improved, and the printed shape is excellent.
  • the content of the thermoplastic resin exceeds the above range, the amount of the thermoplastic resin contained in the conductive paste is too large. Therefore, the electrodes may not be formed with high accuracy.
  • the conductive paste of the present embodiment preferably further contains (D) silica filler.
  • silica filler (D) for example, spherical silica (SiO 2 ) particles commercially available as a semiconductor encapsulating material can be used.
  • the shape of the silica filler may be a shape other than a spherical shape.
  • the method for producing the silica filler is not particularly limited, and a silica filler produced by a known method such as a thermal spraying method can be used.
  • the average particle size of the silica filler is preferably 20 nm or more and 5 ⁇ m or less, and more preferably 1 ⁇ m or more and 3 ⁇ m or less.
  • the average particle size referred to here means a volume-based median diameter (D50) obtained by a laser diffraction / scattering type particle size distribution measurement method.
  • the glass frit contains SiO 2 and TiO 2
  • the chemical resistance of the obtained electrode is improved.
  • the amount of silica filler is too large, the resistance value of the obtained electrode becomes high, and it becomes difficult to obtain a low resistance electrode.
  • the (D) silica filler has the same function as the (B) glass frit. Therefore, the ratio of the weight B of SiO 2 contained in (B) the glass frit and the weight D of SiO 2 contained in (D) the silica filler is within the range of the ratio as described above, so that the resistance is appropriate. Chemical properties can be obtained, and an electrode having low resistance can be obtained.
  • the conductive paste of the present embodiment may contain (E) a solvent.
  • the solvent include alcohols such as methanol, ethanol and isopropyl alcohol (IPA), organic acids such as ethylene acetate, aromatic hydrocarbons such as toluene and xylene, and N-methyl-2-pyrrolidone (NMP).
  • the content of the solvent is not particularly limited.
  • the content of the solvent is preferably 1 to 100 parts by weight, more preferably 5 to 60 parts by weight, based on 100 parts by weight of the alloy particles (A).
  • the viscosity of the conductive paste of the present embodiment is preferably 50 to 700 Pa ⁇ s (shear velocity: 4.0 sec -1 ), more preferably 100 to 300 Pa ⁇ s (shear velocity: 4.0 sec -1 ).
  • the viscosity of the conductive paste can be measured by using an HB type viscometer SC4-14 spindle (manufactured by Brookfield).
  • the conductive paste of the present embodiment may contain other additives such as a dispersant, a rheology adjuster, and a pigment.
  • the conductive paste of the present embodiment can be produced by mixing each of the above components using, for example, a Raikai machine, a pot mill, a three-roll mill, a rotary mixer, and / or a twin-screw mixer. ..
  • This embodiment is an electrode obtained by firing the conductive paste of the above-mentioned embodiment.
  • This embodiment is an electrode formed from the above-mentioned conductive paste of this embodiment as a material.
  • the electrode of the present embodiment can be obtained by applying a conductive paste to a substrate and firing it. Therefore, the electrode of the present embodiment can contain alloy particles containing (A') Ag and Sn, and a (B') glass component made of glass frit as a material.
  • the (A') alloy particles are in a sintered state.
  • the weight ratio of Sn in the (A') alloy particles of the electrode of the present embodiment is less than 10% by weight. Since the (C) thermoplastic resin and (E) solvent contained in the conductive paste are vaporized or burned during firing, the electrodes are substantially free of (C) thermoplastic resin and (E) solvent. ..
  • the electrode of this embodiment can further contain (D') silica filler in addition to (A') alloy particles and (B') glass component. Further, in the electrode of the present embodiment, the weight ratio of Ag in the (A') alloy particles, the content of the (B') glass component and the composition of the (B') glass component are contained in the conductive paste as the material. It corresponds to the weight ratio and composition of (A) alloy particles and (B) glass frit.
  • the sheet resistance of the thin film used as the electrode of the present embodiment varies depending on the film thickness, but can be approximately 10 m ⁇ / ⁇ (10 m ⁇ / square) or 10 m ⁇ / ⁇ or less. Therefore, it can be preferably used for forming an electrode that is required to have a low resistance.
  • the conductive paste is applied onto the substrate.
  • the coating method is arbitrary, and for example, it can be coated using a known method such as dispense, jet dispense, stencil printing, screen printing, pin transfer, or stamping.
  • the conductive paste applied on the substrate is fired at 500 to 900 ° C., more preferably 600 to 900 ° C., and even more preferably 700 to 900 ° C.
  • the solvent component contained in the conductive paste evaporates at 300 ° C. or lower, and the resin component is burnt at 400 ° C. to 600 ° C. to form a fired body of the conductive paste.
  • the electrode thus obtained has high chemical resistance and excellent adhesion to the substrate.
  • This embodiment is a chip resistor having the above-mentioned electrodes.
  • the conductive paste of this embodiment can be used for forming circuits of devices such as electronic components, forming electrodes, and joining devices such as electronic components to a substrate. Further, the conductive paste of the present embodiment can be preferably used for forming an electrode of a chip resistor.
  • FIG. 1 shows an example of the cross-sectional structure of the chip resistor 100 of the present embodiment.
  • the chip resistor 100 can have a rectangular alumina substrate 102, a resistor 104 arranged on the surface of the alumina substrate 102, and a take-out electrode 106.
  • the extraction electrode 106 is an electrode for extracting electricity from the resistor 104.
  • a lower surface electrode 108 for mounting the chip resistor 100 on the substrate can be arranged on the lower surface of the alumina substrate 102.
  • a connection electrode 110 for connecting the take-out electrode 106 and the bottom electrode 108 can be arranged on the end surface of the alumina substrate 102.
  • the conductive paste of the present embodiment can be used to form at least one of a take-out electrode 106, a bottom electrode 108, and a connection electrode 110.
  • the take-out electrode 106 is preferably formed using the conductive paste of the present embodiment.
  • the nickel plating film 112 and the tin plating film 114 can be arranged on the upper surfaces of the take-out electrode 106, the lower surface electrode 108, and the connection electrode 110 (the surface opposite to the alumina substrate 102).
  • the conductive paste of the present embodiment it is possible to form an electrode having high sulfurization resistance, low resistance, and relatively low cost, so that a chip resistor in which a highly reliable electrode is formed is formed.
  • An electronic device such as a vessel can be obtained.
  • the average particle size means a volume-based median diameter (D50) obtained by a laser diffraction / scattering type particle size distribution measurement method.
  • Metal particles A4 Ag particles, average particle size (D50) 2.5 ⁇ m
  • Thermoplastic resin Thermoplastic resin C1 Ethyl cellulose resin (STD-200, manufactured by Dow Chemical Co., Ltd.)
  • Thermoplastic resin C2 Ethyl cellulose resin (STD-4, manufactured by Dow Chemical Co., Ltd.)
  • (D) Silica filler The following silica filler was used as the (D) silica filler. Spherical silica (SiO 2 ) powder, average particle size (D50) 2 ⁇ m
  • a test piece was prepared by the following procedure. First, a conductive paste was applied by screen printing on an alumina substrate of 20 mm ⁇ 20 mm ⁇ 1 mm (t). As a result, 20 patterns having a square pad shape with a side of 1.5 mm were formed on the alumina substrate. A stainless steel 250 mesh mask was used to form the pattern. Next, the conductive paste was dried at 150 ° C. for 10 minutes using a hot air dryer. After the conductive paste was dried, the conductive paste was fired using a firing furnace. The firing temperature is 850 ° C. for 10 minutes, and the total firing time is 60 minutes.
  • the sheet resistance R 0 was measured by the 4-terminal method using a tester.
  • a sulfurization resistance test in a high sulfur environment was performed according to ASTM B809-95 (60 ° C., 1000 hours). That is, 200 g of a 0.5 wt% potassium nitrate aqueous solution is placed in the bottom of the desiccator, 50 g of sulfur powder and a test piece are placed on a perforated plate, the desiccator is covered, and the mixture is stored at 60 ° C. for 1000 hours. The accelerated test of sulfide of the electrode was performed.
  • FIG. 2 shows an SEM photograph of a cross section of a test piece prepared under the same conditions as in Example 4 in which the rate of change in sheet resistance was relatively small, taken with a scanning electron microscope (SEM) at a magnification of 1500 times.
  • FIG. 3 shows an SEM photograph of a cross section of a test piece prepared under the same conditions as in Comparative Example 3 (which was an insulator) having a large rate of change in sheet resistance, taken by SEM at a magnification of 1500 times.
  • the test piece was stored in a sulfur atmosphere (60 ° C.) for 1000 hours, and then SEM observed.
  • the electrode patterns obtained by firing the conductive pastes of Examples 1 to 10 had a rate of change in sheet resistance of 11% or less, which was relatively low.
  • the rate of change in sheet resistance is 95% or more, or the sheet resistance after storage in the sulfide acceleration test is high. It was too much to measure.
  • a silver sulfide film is deposited on the surface of the electrode, but sulfur does not penetrate into the inside of the electrode. Therefore, no cracks or the like were observed inside the electrode. That is, in the example shown in FIG. 2, it is clear that the formation of the silver sulfide 20 has almost no effect on the fired body 10.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
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  • Details Of Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
PCT/JP2021/000345 2020-01-16 2021-01-07 導電性ペースト、電極及びチップ抵抗器 WO2021145269A1 (ja)

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CN202180009442.0A CN114930467A (zh) 2020-01-16 2021-01-07 导电性膏、电极以及贴片电阻器
JP2021571163A JP7687687B2 (ja) 2020-01-16 2021-01-07 導電性ペースト、電極及びチップ抵抗器
KR1020227026685A KR102823944B1 (ko) 2020-01-16 2021-01-07 도전성 페이스트, 전극 및 칩 저항기

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
KR20250047267A (ko) 2022-08-26 2025-04-03 나믹스 가부시끼가이샤 도전성 페이스트, 전극, 전자 부품 및 전자 기기
KR20250047266A (ko) 2022-08-26 2025-04-03 나믹스 가부시끼가이샤 도전성 페이스트, 전극, 전자 부품 및 전자 기기
KR20250053046A (ko) 2022-08-26 2025-04-21 나믹스 가부시끼가이샤 도전성 페이스트, 전극, 전자 부품 및 전자 기기

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KR20250047267A (ko) 2022-08-26 2025-04-03 나믹스 가부시끼가이샤 도전성 페이스트, 전극, 전자 부품 및 전자 기기
KR20250047266A (ko) 2022-08-26 2025-04-03 나믹스 가부시끼가이샤 도전성 페이스트, 전극, 전자 부품 및 전자 기기
KR20250052363A (ko) 2022-08-26 2025-04-18 나믹스 가부시끼가이샤 도전성 페이스트, 전극, 전자 부품 및 전자 기기
KR20250053046A (ko) 2022-08-26 2025-04-21 나믹스 가부시끼가이샤 도전성 페이스트, 전극, 전자 부품 및 전자 기기

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