WO2021145257A1 - Dispositif d'imagerie et appareil électronique - Google Patents

Dispositif d'imagerie et appareil électronique Download PDF

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Publication number
WO2021145257A1
WO2021145257A1 PCT/JP2021/000241 JP2021000241W WO2021145257A1 WO 2021145257 A1 WO2021145257 A1 WO 2021145257A1 JP 2021000241 W JP2021000241 W JP 2021000241W WO 2021145257 A1 WO2021145257 A1 WO 2021145257A1
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Prior art keywords
photoelectric conversion
conversion unit
unit
charge storage
transfer gate
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PCT/JP2021/000241
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English (en)
Japanese (ja)
Inventor
隆寛 豊島
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2021145257A1 publication Critical patent/WO2021145257A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Definitions

  • This disclosure relates to an imaging device and an electronic device.
  • Imaging devices such as CMOS sensors are used in a wide range of fields such as distance measurement for automatic driving and face recognition, in addition to applications for photography and video recording.
  • CMOS sensors For in-vehicle imaging devices such as autonomous driving and drive recorders, it is desirable to perform clear shooting with less noise and no blackout or overexposure even in scenes with large differences in brightness such as tunnel entrances and exits and urban areas at night. Is done.
  • an imaging device having a wide dynamic range is required (see Patent Document 1).
  • the pixel internal capacitance is formed by injecting and diffusing n-type impurity ions, similar to a photodiode.
  • a region in which p-type impurity ions are injected and diffused (hereinafter, p-type region) is provided between the pixel internal capacitance and the photodiode in order to electrically separate the pixel internal capacitance and the photodiode, or for the purpose of pinning. Be done.
  • the p-type region may press the photodiode region or hinder the formation of a potential gradient for charge transfer from the photodiode to the transfer gate.
  • the present disclosure provides an imaging device and an electronic device in which the photoelectric conversion efficiency does not decrease even when the pixel internal capacity (charge storage unit) is provided.
  • a first photoelectric conversion unit arranged inside the substrate and a first photoelectric conversion unit are used.
  • An image pickup apparatus is provided that includes a first transfer gate that is arranged outside the annular region and transfers charges photoelectrically converted by the first photoelectric conversion unit.
  • the annular region may include an insulator filled in an annular groove formed in the depth direction along the surface of the substrate and a conductor arranged in a part of the insulator. ..
  • the bottom portion of the annular region in the depth direction of the substrate may be arranged above the upper end of the first photoelectric conversion portion.
  • a read-out circuit for reading out the charge converted by photoelectric in the first photoelectric conversion unit is provided.
  • the read-out circuit and the first transfer gate may be arranged outside the peripheral edge of the annular region.
  • the charge storage unit A charge storage region provided above the first photoelectric conversion unit and It may have an electrode arranged above the charge storage region including a part of the annular region.
  • the first photoelectric conversion unit and the charge storage region may be regions in which first conductive type impurity ions are injected and diffused.
  • the diffusion region may have an impurity concentration gradient along the shape of the annular region.
  • the first transfer gate may be a vertical gate extending in the depth direction of the substrate.
  • a second photoelectric conversion unit arranged in a place different from the first photoelectric conversion unit in the substrate, A second transfer gate for transferring the charge photoelectrically converted by the second photoelectric conversion unit to the charge storage unit may be provided.
  • the first photoelectric conversion unit may have a larger area of the light receiving surface and higher sensitivity than the second photoelectric conversion unit.
  • the charge storage unit may store the electric charge converted by the first photoelectric conversion unit.
  • a pixel array unit having a plurality of pixels, each of which performs photoelectric conversion
  • the drive unit that drives the pixel array unit and
  • An electronic device including a signal processing unit that performs signal processing based on an electrical signal photoelectrically converted by the pixel array unit.
  • At least one of the plurality of pixels The first photoelectric conversion unit arranged inside the substrate and A charge storage unit arranged above the first photoelectric conversion unit and accumulating charges, and a charge storage unit.
  • An annular region arranged so as to surround the charge storage portion, and An electronic device is provided that is arranged outside the annular region and has a first transfer gate that transfers the charge photoelectrically converted by the first photoelectric conversion unit.
  • At least one of the plurality of pixels A second photoelectric conversion unit arranged in a place different from the first photoelectric conversion unit in the substrate, It may have a second transfer gate that transfers the charge photoelectrically converted by the second photoelectric conversion unit to the charge storage unit.
  • the first photoelectric conversion unit may have a larger area of the light receiving surface and higher sensitivity than the second photoelectric conversion unit.
  • the first photoelectric conversion unit is used to generate an image
  • the second photoelectric conversion unit and the charge storage unit are used to perform imaging with a wider dynamic range than the image captured under low illuminance.
  • a signal processing unit that generates an image may be provided.
  • the annular region may include an insulator filled in an annular groove formed in the depth direction along the surface of the substrate, and a conductor arranged in a part of the insulator.
  • the bottom portion of the annular region in the depth direction of the substrate may be arranged above the upper end of the first photoelectric conversion portion.
  • a read-out circuit for reading out the charge converted by photoelectric in the first photoelectric conversion unit is provided.
  • the read-out circuit and the first transfer gate may be arranged outside the peripheral edge of the annular region.
  • FIG. 5 is a cross-sectional view of the sensor pixel of FIG.
  • FIG. 6 is a cross-sectional view showing in more detail the cross-sectional structure around the annular region of FIG. 4 or FIG.
  • FIG. 9 is a cross-sectional view showing a manufacturing process following FIG. 9A.
  • FIG. 9 is a cross-sectional view showing a manufacturing process following FIG. 9B.
  • FIG. 9 is a cross-sectional view showing a manufacturing process following FIG. 9C.
  • FIG. 9 is a cross-sectional view showing a manufacturing process following FIG. 9D.
  • FIG. 9 is a cross-sectional view showing a manufacturing process following FIG. 9E.
  • FIG. 9 is a cross-sectional view showing a manufacturing process following FIG. 9F.
  • the block diagram which shows the configuration example of the camera as an electronic device to which this technology is applied.
  • the block diagram which shows the schematic configuration example of the vehicle control system which is an example of a moving body control system.
  • the imaging device and the electronic device according to the present embodiment will be described with reference to the drawings.
  • the main components of the image pickup apparatus and the electronic device according to the present embodiment will be mainly described, but the image pickup apparatus and the electronic device according to the present embodiment may have components and functions not shown or described. .. The following description does not exclude components or functions not shown or described.
  • the image pickup apparatus of the present disclosure is, for example, a back-illuminated image sensor using a CMOS (Complementary Metal Oxide Semiconductor) image sensor or the like.
  • the image pickup apparatus of the present disclosure receives light from a subject for each pixel and performs photoelectric conversion to generate a pixel signal which is an electric signal.
  • the back-illuminated image sensor receives light from the subject and receives an electric signal between the light receiving surface on which the light from the subject is incident and the wiring layer provided with wiring such as a transistor that drives each pixel.
  • a photoelectric conversion unit such as a photodiode that converts the light into a pixel is arranged for each pixel.
  • the present disclosure may be applicable to an image sensor of an imaging method other than the CMOS image sensor.
  • FIG. 1 is a block diagram showing a schematic configuration of an image pickup apparatus 100 according to an embodiment of the present disclosure. Since the image pickup device 100 of FIG. 1 is formed on a semiconductor substrate, it is accurately a solid-state image pickup device 100, but hereinafter, it is simply referred to as an image pickup device 100.
  • the image pickup apparatus 100 of FIG. 1 includes a pixel array unit 111 in which a plurality of sensor pixels 121 that perform photoelectric conversion are arranged in a matrix, that is, in a two-dimensional plane.
  • the sensor pixel 121 corresponds to a specific example of the "pixel" of the present disclosure.
  • the charge photoelectrically converted by the pixel array unit 111 is read out via a read-out circuit.
  • the image pickup apparatus 100 includes, for example, a pixel array unit 111, a vertical drive unit 112, a lamp wave module 113, a column signal processing unit 114, a clock module 115, a data storage unit 116, a horizontal drive unit 117, a system control unit 118, and signal processing.
  • the unit 119 is provided.
  • the image pickup apparatus 100 is composed of a single semiconductor substrate or a plurality of semiconductor substrates.
  • the image pickup apparatus 100 has a vertical drive unit 112, a lamp wave module 113, a column signal processing unit 114, a clock module 115, a data storage unit 116, a horizontal drive unit 117, and a system on a semiconductor substrate on which a pixel array unit 111 is formed.
  • Another semiconductor substrate on which the control unit 118 and the signal processing unit 119 are formed can be electrically connected by Cu-Cu bonding or the like.
  • At least a part of the vertical drive unit 112, the ramp wave module 113, the column signal processing unit 114, the clock module 115, the data storage unit 116, the horizontal drive unit 117, the system control unit 118, and the signal processing unit 119 are combined with the pixel array unit 111. It may be formed on the same semiconductor substrate.
  • the pixel array unit 111 has a plurality of sensor pixels 121 including a photoelectric conversion element that generates and stores electric charges according to the amount of light incident from the subject. As shown in FIG. 1, the sensor pixels 121 are arranged in the horizontal direction (row direction) and the vertical direction (column direction), respectively.
  • the pixel drive lines 122 are wired along the row direction for each pixel row consisting of the sensor pixels 121 arranged in a row in the row direction, and are composed of the sensor pixels 121 arranged in a row in the column direction.
  • a vertical signal line 123 is wired along the column direction for each pixel row.
  • the vertical drive unit 112 includes a shift register, an address decoder, and the like.
  • the vertical drive unit 112 simultaneously drives all of the plurality of sensor pixels 121 in the pixel array unit 111 by supplying signals or the like to the plurality of sensor pixels 121 via the plurality of pixel drive lines 122, or It is driven in pixel row units.
  • the lamp wave module 113 generates a lamp wave signal used for A / D (Analog / Digital) conversion of the pixel signal and supplies it to the column signal processing unit 114.
  • the column signal processing unit 114 is composed of, for example, a shift register, an address decoder, or the like, and performs noise removal processing, correlation double sampling processing, A / D conversion processing, and the like to generate a pixel signal.
  • the column signal processing unit 114 supplies the generated pixel signal to the signal processing unit 119.
  • the clock module 115 supplies clock signals for operation to each part of the image pickup apparatus 100.
  • the horizontal drive unit 117 sequentially selects unit circuits corresponding to the pixel strings of the column signal processing unit 114. By the selective scanning by the horizontal drive unit 117, the pixel signals signal-processed for each unit circuit in the column signal processing unit 114 are sequentially output to the signal processing unit 119.
  • the system control unit 118 includes a timing generator or the like that generates various timing signals.
  • the system control unit 118 controls the drive of the vertical drive unit 112, the ramp wave module 113, the column signal processing unit 114, the clock module 115, and the horizontal drive unit 117 based on the timing signal generated by the timing generator. be.
  • the signal processing unit 119 performs signal processing such as arithmetic processing on the pixel signal supplied from the column signal processing unit 114 while temporarily storing data in the data storage unit 116 as necessary, and each pixel signal. It outputs an image signal consisting of.
  • FIG. 2 is an equivalent circuit diagram of the sensor pixel 121 and the readout circuit 120.
  • the reading circuit 120 is provided for each sensor pixel 121.
  • the readout circuit 120 includes a first photoelectric conversion unit 101, a first transfer gate 102, a second photoelectric conversion unit 103, a second transfer gate 104, a third transfer gate 105, a capacitance unit (pixel internal capacitance) 106, and a reset gate 107. It has an FD (floating diffusion) unit 108, an amplification transistor 109, and a selection transistor 110.
  • FD floating diffusion
  • the first photoelectric conversion unit 101 has, for example, a PN junction photodiode.
  • the first photoelectric conversion unit 101 generates and stores an electric charge according to the amount of received light.
  • the first transfer gate 102 is connected between the first photoelectric conversion unit 101 and the FD unit 108.
  • a drive signal TGL is applied to the gate electrode of the first transfer gate 102.
  • the drive signal TGL becomes active (for example, high potential)
  • the first transfer gate 102 becomes conductive, and the electric charge accumulated in the first photoelectric conversion unit 101 is transferred to the FD unit 108 via the first transfer gate 102. Transferred to.
  • the second photoelectric conversion unit 103 has, for example, a PN junction photodiode, like the first photoelectric conversion unit 101.
  • the second photoelectric conversion unit 103 generates and stores an electric charge according to the amount of received light.
  • the area of the light receiving surface of the first photoelectric conversion unit 101 is larger and the sensitivity is higher, and the area of the light receiving surface of the second photoelectric conversion unit 103 is larger. Is narrow and the sensitivity is low.
  • the second transfer gate 104 is connected between the capacitance unit 106 and the FD unit 108.
  • a drive signal FCG is applied to the gate electrode of the second transfer gate 104.
  • the drive signal FCG becomes active (for example, high potential)
  • the second transfer gate 104 becomes conductive, and the potentials of the capacitance unit 106 and the FD unit 108 are combined.
  • the third transfer gate 105 is connected between the second photoelectric conversion unit 103 and the capacitance unit 106.
  • a drive signal TGS is applied to the gate electrode of the third transfer gate 105.
  • the drive signal TGS becomes active (for example, high potential)
  • the third transfer gate 105 becomes conductive, and the electric charge accumulated in the second photoelectric conversion unit 103 passes through the third transfer gate 105 to the capacitance unit. It is transferred to 106 or a region where the potentials of the capacitance unit 106 and the FD unit 108 are combined.
  • the lower part of the gate electrode of the third transfer gate 105 has a slightly deeper potential, which exceeds the saturated charge amount of the second photoelectric conversion unit 103, and the electric charge overflowing from the second photoelectric conversion unit 103 is transferred to the capacitance unit 106.
  • An overflow path to be transferred is formed.
  • the overflow path formed below the gate electrode of the third transfer gate 105 is simply referred to as an overflow path of the third transfer gate 105.
  • the capacitance unit 106 has a pixel internal capacitance and is electrically connected to the second transfer gate 104 and the third transfer gate 105.
  • the counter electrode (upper electrode) 132 of the capacitance unit 106 is electrically connected to the power supply VDD that supplies the power supply voltage VDD.
  • the capacitance unit 106 stores the electric charge transferred from the second photoelectric conversion unit 103.
  • the reset gate 107 is connected between the power supply VDD and the FD unit 108.
  • a drive signal RST is applied to the gate electrode of the reset gate 107.
  • the drive signal RST becomes active
  • the reset gate 107 becomes conductive
  • the potential of the FD unit 108 is reset to the level of the power supply voltage VDD.
  • the FD unit 108 converts the electric charge into a voltage signal and outputs the electric charge.
  • the amplification transistor 109 has a gate electrode connected to the FD section 108 and a drain electrode connected to the power supply VDD, and serves as an input section of a so-called source follower circuit, which is a read-out circuit that reads out the electric charge held in the FD section 108. That is, the amplification transistor 109 constitutes a source follower circuit with a constant current source 131 connected to one end of the vertical signal line 123 by connecting the source electrode to the vertical signal line 123 via the selection transistor 110.
  • the selection transistor 110 is connected between the source electrode of the amplification transistor 109 and the vertical signal line 123.
  • a drive signal SEL is applied to the gate electrode of the selection transistor 110.
  • the drive signal SEL becomes active, the selection transistor 110 becomes conductive and the sensor pixel 121 becomes selected.
  • the pixel signal output from the amplification transistor 109 is output to the vertical signal line 123 via the selection transistor 110.
  • each drive signal is in the active state
  • the fact that each drive signal is in the inactive state is also referred to as turning off each drive signal.
  • each gate or each transistor is also referred to as being turned on, and when each gate or each transistor is in a non-conducting state, when each gate or each transistor is turned off. Also called.
  • the first photoelectric conversion unit 101 has a larger area of the light receiving surface and higher sensitivity than the second photoelectric conversion unit 103. As a result, the first photoelectric conversion unit 101 is used for imaging with low illuminance.
  • the electric charge converted by photoelectric in the second photoelectric conversion unit 103 is accumulated in the capacitance unit 106. As a result, the second photoelectric conversion unit 103 is used for imaging with a wide dynamic range by using the capacitance unit 106 together.
  • the imaging operation and the reading operation of the sensor pixel 121 will be described based on the reading circuit 120 of FIG.
  • the first transfer gate 102, the second transfer gate 104, and the third transfer gate 105 are turned on, the reset gate 107 is turned on, and the accumulated charges of the first photoelectric conversion unit 101 and the first 2
  • the accumulated charge of the photoelectric conversion unit 103 and the accumulated charge of the capacitance unit 106 are reset.
  • the capacitance unit 106 accumulates the electric charge overflowing from the second photoelectric conversion unit 103 through the overflow path of the third transfer gate 105.
  • the reading circuit 120 of FIG. 2 performs an operation in which the first photoelectric conversion unit 101 and the second photoelectric conversion unit 103 convert the electric charge accumulated by photoelectric conversion into a voltage and read it out for each pixel row or each of a plurality of pixel rows. conduct. First, the second transfer gate 104 and the third transfer gate 105 are turned on. As a result, the potentials of the capacitance unit 106 and the FD unit 108 are combined, and the accumulated charge of the second photoelectric conversion unit 103 and the accumulated charge of the capacitance unit 106 are accumulated in the FD unit 108.
  • the amplification transistor 109 amplifies a voltage signal corresponding to the accumulated charge of the FD unit 108. This amplified signal is a low-sensitivity data signal obtained by amplifying a voltage signal corresponding to the electric charge of the capacitance unit 106 and the FD unit 108 combined.
  • both the second transfer gate 104 and the reset gate 107 are turned on to reset the accumulated charges of the capacitance unit 106 and the FD unit 108.
  • the amplification transistor 109 amplifies the voltage signal corresponding to the reset charge of the FD unit 108.
  • This amplified signal is a low-sensitivity reset signal obtained by combining the potentials of the capacitance section 106 and the FD section 108 to amplify the voltage signal in a state where the accumulated charges of the capacitance section 106 and the FD section 108 are reset. ..
  • the second transfer gate 104 is switched from on to off, and the voltage signal of the FD unit 108 in this state is amplified by the amplification transistor 109.
  • This amplified signal is a high-sensitivity reset signal.
  • the amplification transistor 109 amplifies a voltage signal corresponding to the accumulated charge of the FD unit 108. This amplified signal is a high-sensitivity data signal.
  • each sensor pixel 121 outputs the low-sensitivity data signal, the low-sensitivity reset signal, the high-sensitivity reset signal, and the high-sensitivity data signal in this order to the vertical signal line 123.
  • the signal processing unit 119 performs noise removal processing on these signals and then performs various signal processing.
  • the image pickup device 100 when the image pickup device 100 according to the present embodiment is used as an image pickup sensor for a vehicle, in a scene where there is a large difference in brightness such as a tunnel entrance / exit or an urban area at night, when the surroundings are low illuminance, the first photoelectric conversion unit 101 is used. An image is generated based on the photoelectrically converted charge, and when the surrounding illuminance becomes high, the second photoelectric conversion unit 103 and the capacitance unit 106 that stores the photoelectrically converted charge by the second photoelectric conversion unit 103 are used. Images can be generated.
  • the LED flicker is used when capturing a blinking subject such as an LED light source. Does not occur. Further, since photoelectric conversion (exposure) by the first photoelectric conversion unit 101 and the second photoelectric conversion unit 103 is performed in parallel and the electric charge which is the exposure result is sequentially transferred to the FD unit 10, high illuminance and low illuminance suddenly occur. Even if it is switched, the photoelectric conversion results of the first photoelectric conversion unit 101 and the second photoelectric conversion unit 103 can be quickly switched and output.
  • FIG. 3 is a plan view of the sensor pixel 121 of FIG. 2 viewed from the surface side on which the readout circuit 120 is formed.
  • the upper electrode 132 of the capacitance portion 106 is arranged near the central portion of the sensor pixel 121.
  • the capacitance unit 106 is arranged below the upper electrode 132, and the first photoelectric conversion unit 101 is further arranged below the capacitance unit 106.
  • FIG. 3 shows an example in which the upper electrode 132 has a rectangular shape, but the shape of the upper electrode 132 is arbitrary and does not necessarily have to be rectangular.
  • An annular region 133 made of an insulator is provided so as to surround the capacitance portion 106. As will be described later, the annular region 133 is formed by forming a narrow annular trench and filling the trench with an insulator such as an oxide film.
  • a conductor is arranged in a part of the inside of the annular region 133. This conductor is the upper electrode of the capacitance portion 106.
  • each transistor, the FD unit 108, and the second photoelectric conversion unit 103 in the readout circuit 120 shown in FIG. 2 are arranged.
  • the specific arrangement of each transistor in the readout circuit 120 in the sensor pixel 121, the FD unit 108, and the second photoelectric conversion unit 103 is arbitrary, and is not limited to the arrangement shown in FIG.
  • the annular region 133 As shown in FIG. 3, by arranging the annular region 133 so as to surround the upper electrode 132 of the capacitance unit 106, the charge transfer efficiency from the first photoelectric conversion unit 101 to the first transfer gate 102 can be improved. Further, by providing the annular region 133, the electrode of the capacitance portion 106 can be formed even inside the annular region 133, so that the capacitance of the capacitance portion 106 can be increased.
  • FIG. 4 is a schematic cross-sectional view of the sensor pixel 121 according to the present embodiment.
  • a part of the readout circuit 120 formed on the surface side of the silicon substrate is shown in a circuit diagram instead of a cross-sectional structure so that the connection relationship is clear.
  • the first photoelectric conversion unit 101 (PD unit) is arranged inside the silicon substrate 134, and the capacitance unit 106 is arranged above the first photoelectric conversion unit 101.
  • Both the first photoelectric conversion unit 101 and the capacitance unit 106 are n-type regions in which n-type impurity ions are injected and diffused.
  • a p-type region 135 in which p-type impurity ions are injected and diffused is arranged between the first photoelectric conversion unit 101 and the capacitance unit 106.
  • the first transfer gate 102 is a vertical gate extending in the depth direction of the silicon substrate 134. By making the first transfer gate 102 a vertical gate, even if the first photoelectric conversion unit 101 is formed at a position deep from the surface of the silicon substrate 134, the first photoelectric conversion unit 101 can be transferred to the first transfer gate 102. Charge transfer efficiency can be improved.
  • a p-type region 135 is also arranged between the first photoelectric conversion unit 101 and the first transfer gate 102.
  • the FD unit 108 is arranged in the vicinity of the first transfer gate 102. Further, a second transfer gate 104 and a third transfer gate 105 are arranged in the vicinity of the FD unit 108. A second photoelectric conversion unit 103 is arranged inside the silicon substrate 134 near the third transfer gate 105. The electric charge photoelectrically converted by the second photoelectric conversion unit 103 is transferred to the capacitance unit 106 via the overflow path of the third transfer gate 105.
  • the n-type regions 106a and 106b in FIG. 4 form the capacitance section 6.
  • the n-type regions 106a, 106b and p-type regions 135 of the first photoelectric conversion unit 101 and the capacitance unit 106 are formed by injection of impurity ions and diffusion by heat treatment.
  • the p-type region 135 presses the region of the first photoelectric conversion unit 101 to reduce the photoelectric conversion efficiency, or the electric charge from the first photoelectric conversion unit 101 to the first transfer gate 102.
  • the transfer may be hindered by the p-type region 135 and the charge transfer efficiency may decrease.
  • the p-type region 135 presses the first photoelectric conversion unit 101, or the first photoelectric conversion unit 101 to the first transfer gate 102 There is no risk of interfering with charge transfer to. The reason for this will be described later.
  • the capacitance portion 106 is formed after the annular region 133 is formed.
  • the annular region 133 is a region in which a narrow groove is formed around the region where the capacitance portion 106 is to be formed, and the inside of the groove is filled with an oxide film.
  • the annular region 133 may be referred to as an STI (Shallow Trench Isolation) region.
  • the width of the annular region 133 in the substrate surface direction is, for example, several tens of nm, and the length in the depth direction of the substrate is, for example, several tens of nm.
  • FIGS. 2 to 4 have described an example in which each sensor pixel 121 has a second photoelectric conversion unit 103 in addition to the first photoelectric conversion unit 101, the second photoelectric conversion unit 103 is not always essential.
  • FIG. 5 is a circuit diagram of a readout circuit 120 of the sensor pixel 121 that does not have the second photoelectric conversion unit 103.
  • the read-out circuit 120 of FIG. 5 has a circuit configuration in which the second photoelectric conversion unit 103 and the third transfer gate 105 are omitted from the read-out circuit 120 of FIG.
  • the capacitance unit 106 was used for the purpose of accumulating the charge photoelectrically converted by the second photoelectric conversion unit 103, but in the readout circuit 120 of FIG. 5, the photoelectric conversion unit 101 performs photoelectric conversion.
  • the capacitance unit 106 is used for the purpose of accumulating the electric charge.
  • FIG. 6 is a cross-sectional view of the sensor pixel 121 of FIG. It is common with FIG. 4 in that the n-type region of the capacitance unit 106 is arranged above the first photoelectric conversion unit 101 with the p-type region 135 interposed therebetween. The n-type region is electrically connected to the FD portion via the second transfer gate.
  • FIG. 7 is a plan view of the sensor pixel 121 of FIG. 5 viewed from the surface side on which the readout circuit 120 is formed.
  • the plan view of FIG. 7 has a layout in which the third transfer gate is omitted from the plan view of FIG.
  • the annular region 133 is formed so as to surround the polysilicon of the capacitance portion 106.
  • FIG. 8 is a cross-sectional view showing in more detail the cross-sectional structure around the annular region 133 of FIG. 4 or FIG.
  • the annular region 133 is formed so as to surround the capacitance portion 106.
  • the n-type region 106a of the capacitance portion 106 is formed.
  • One end of the upper electrode 132 of the capacitance portion 106 is formed inside the annular region 133. As a result, the capacity of the capacity unit 106 can be increased.
  • a SiO2 film 136 is formed on the upper electrode 132, and a SiN film 137 is formed on the SiO2 film 136. Inside the annular region 133, not only the originally filled SiO2 film, but also the upper electrode 132 and the SiN film 137 are arranged.
  • a first photoelectric conversion unit 101 is arranged below the capacitance unit 106.
  • a first transfer gate 102 is arranged outside the annular region 133.
  • the first transfer gate 102 has a vertical gate extending in the depth direction of the substrate. By providing the vertical gate, the electric charge converted by photoelectric in the first photoelectric conversion unit 101 is easily transferred to the first transfer gate 102.
  • the depth position of the first transfer gate 102 may be deeper or shallower than the depth position of the first photoelectric conversion unit 101.
  • a p-type region 135 in which p-type impurity ions are injected and diffused is provided between the annular region 133 and the first transfer gate 102.
  • By injecting p-type impurity ions from above the cyclic region 133 it is possible to give a gradient to the impurity concentration in the p-type region 135 as shown by the broken line in FIG. More specifically, the closer to the first transfer gate 102, the higher the concentration of p-type impurities on the upper side of the substrate. As a result, the p-type region 135 does not have a possibility of pressing the first photoelectric conversion unit 101, and the p-type region 135 does not interfere with the charge transfer from the first photoelectric conversion unit 101 to the first transfer gate 102.
  • the first transfer gate 102 It is not always necessary to make the first transfer gate 102 a vertical gate. As shown in FIG. 8, by giving a concentration gradient to the p-type impurity concentration, even if the first transfer gate 102 is only on the surface of the silicon substrate 134, the first photoelectric conversion unit 101 to the first transfer gate 102 Charges can be transferred efficiently.
  • 9A to 9G are cross-sectional views showing a manufacturing process of the sensor pixel 121.
  • 9A to 9G show the manufacturing steps of the first photoelectric conversion unit 101, the capacitance unit 106, and the first transfer gate 102, and the manufacturing steps of the second photoelectric conversion unit 103 and the like are omitted.
  • p-type impurity ions are injected and diffused into the silicon substrate 134 to form a p-type region 135 (active region), and an annular region 133 is formed on the surface side of the silicon substrate 134.
  • An annular trench 133a is formed.
  • the inside of the annular trench 133a is filled with the SiO2 film 133b to form the annular region 133 (STI region).
  • n-type impurity ions are injected into the silicon substrate 134 to form the first photoelectric conversion unit 101 (PD unit), and the readout circuit 120 is formed on the surface side of the silicon substrate 134.
  • PD unit photoelectric conversion unit 101
  • the readout circuit 120 is formed on the surface side of the silicon substrate 134.
  • the first transfer gate 102 is formed in a process described later.
  • a resist film 138 is applied to the surface of the silicon substrate 134 for patterning. At this time, the resist film 138 is patterned so that a part of the annular region 133 is exposed. Then, a high-concentration n-type impurity ion is injected from above the resist film 138 to form an n-type region 106a of the capacitance section 106 above the first photoelectric conversion section 101. At this time, n-type impurity ions are also injected into a part of the cyclic region 133. In this way, the film quality of the n-type region 106a can be improved by injecting impurity ions including a part of the cyclic region 133.
  • an etching process is performed to peel off the resist film 138. At this time, a part of the region in which the n-type impurity ion is injected in the cyclic region 133 is also removed.
  • a trench 102a for the first transfer gate 102 is formed.
  • p-type impurity ions are injected into the side wall and bottom of the trench 102a to form a p-type region 139 for preventing weakening of pinning, and the side wall portion of the trench 102a is formed.
  • the SiO2 layer 140 is formed.
  • FIG. 9F shows an example in which a p-type region 139 is formed at the bottom of the trench 102a, the p-type region 139 is also formed on the side wall portion of the trench 102a to prevent the pinning weakening of the side wall portion.
  • the polysilicon 102b is filled in the trench 102a, and the electrode of the first transfer gate 102 is formed on the surface side of the silicon substrate 134.
  • the polysilicon film 132 is also formed above the n-type region 106a, and the upper electrode 132 is obtained.
  • a part of the polysilicon film 132 is also formed inside the annular region 133.
  • the SiO2 film 136 and the SiN film 132 are formed on the polysilicon film 132.
  • the p-type impurity ion is injected and diffused between the cyclic region 133 and the first transfer gate 102 to form the p-type region 135.
  • the resist film is patterned so that a part of the cyclic region 133 is exposed, and then the p-type impurity ion is injected.
  • an impurity concentration gradient is formed in the p-type region 135 in the silicon substrate 134. More specifically, the closer to the surface of the silicon substrate 134, the higher the p-type impurity concentration becomes as it approaches the first transfer gate 102.
  • the annular region 133 is arranged so as to surround the periphery of the capacitance unit 106 arranged above the first photoelectric conversion unit 101 in the sensor pixel 121, and the first transfer gate is arranged outside the annular region 133.
  • the charge transfer efficiency from the first photoelectric conversion unit 101 to the first transfer gate 102 can be improved.
  • the capacity of the capacitance portion 106 can be increased by forming the capacitance portion 106 by using a part of the annular region 133. Further, since the p-type impurity ion is injected between the annular region 133 and the first transfer gate 102 including a part of the annular region 133 to form the p-type region 135, p is formed along the shape of the annular region 133.
  • the mold region 135 can have an impurity concentration gradient. Due to this impurity concentration gradient, there is no possibility that the p-type region 135 presses on the first photoelectric conversion unit 101, and the p-type region 135 interferes with the charge transfer path from the first photoelectric conversion unit 101 to the first transfer gate 102. There is no risk of doing it. Therefore, the charge transfer efficiency from the first photoelectric conversion unit 101 to the first transfer gate 102 is improved.
  • the film quality of the n-type region 106a can be improved by injecting a high concentration of n-type impurity ions including a part of the cyclic region 133. Can also be obtained.
  • the sensitivity of the first photoelectric conversion unit 101 is made better than that of the second photoelectric conversion unit 103.
  • the low illuminance characteristic can be improved by using the first photoelectric conversion unit 101.
  • by accumulating the charge photoelectrically converted by the second photoelectric conversion unit 103 in the capacitance unit 106 it is possible to raise the level at which the charge photoelectrically converted by the second photoelectric conversion unit 103 with low sensitivity is saturated, which is dynamic. It is possible to have an HDR (High Definition Range) function that expands the range.
  • HDR High Definition Range
  • FIG. 10 is a block diagram showing a configuration example of the camera 2000 as an electronic device to which the present technology is applied.
  • the camera 2000 includes an optical unit 2001 composed of a lens group and the like, an image pickup device (imaging device) 2002 to which the above-mentioned image pickup device 100 and the like (hereinafter referred to as an image pickup device 100 and the like) are applied, and a DSP (camera signal processing circuit).
  • a Digital Signal Processor) circuit 2003 is provided.
  • the camera 2000 also includes a frame memory 2004, a display unit 2005, a recording unit 2006, an operation unit 2007, and a power supply unit 2008.
  • the DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, the operation unit 2007, and the power supply unit 2008 are connected to each other via the bus line 2009.
  • the optical unit 2001 captures incident light (image light) from the subject and forms an image on the image pickup surface of the image pickup apparatus 2002.
  • the image pickup apparatus 2002 converts the amount of incident light imaged on the image pickup surface by the optical unit 2001 into an electric signal in pixel units and outputs it as a pixel signal.
  • the display unit 2005 is composed of a panel-type display device such as a liquid crystal panel or an organic EL panel, and displays a moving image or a still image captured by the image pickup device 2002.
  • the recording unit 2006 records a moving image or a still image captured by the imaging device 2002 on a recording medium such as a hard disk or a semiconductor memory.
  • the operation unit 2007 issues operation commands for various functions of the camera 2000 under the operation of the user.
  • the power supply unit 2008 appropriately supplies various power sources serving as operating power sources for the DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, and the operation unit 2007 to these supply targets.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device mounted on a moving body of any kind such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. You may.
  • FIG. 11 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technique according to the present disclosure can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are shown as a functional configuration of the integrated control unit 12050.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 provides a driving force generator for generating the driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating a braking force of a vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, blinkers or fog lamps.
  • the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches.
  • the body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the vehicle outside information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the image pickup unit 12031 is connected to the vehicle exterior information detection unit 12030.
  • the vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image.
  • the vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects the in-vehicle information.
  • a driver state detection unit 12041 that detects the driver's state is connected to the in-vehicle information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether or not the driver has fallen asleep.
  • the microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit.
  • a control command can be output to 12010.
  • the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform coordinated control for the purpose of automatic driving, etc., which runs autonomously without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the vehicle exterior information detection unit 12030.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the external information detection unit 12030, and performs coordinated control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 12052 transmits an output signal of at least one of audio and an image to an output device capable of visually or audibly notifying information to the passenger or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an onboard display and a heads-up display.
  • FIG. 12 is a diagram showing an example of the installation position of the imaging unit 12031.
  • the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.
  • the imaging units 12101, 12102, 12103, 12104, 12105 are provided at positions such as, for example, the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100.
  • the imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided in the side mirrors mainly acquire images of the side of the vehicle 12100.
  • the imaging unit 12104 provided on the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100.
  • the imaging unit 12105 provided on the upper part of the windshield in the vehicle interior is mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 12 shows an example of the photographing range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • the imaging range 12114 indicates the imaging range of the imaging units 12102 and 12103.
  • the imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 as viewed from above can be obtained.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the image pickup units 12101 to 12104 may be a stereo camera composed of a plurality of image pickup elements, or may be an image pickup element having pixels for phase difference detection.
  • the microcomputer 12051 uses the distance information obtained from the imaging units 12101 to 12104 to obtain the distance to each three-dimensional object within the imaging range 12111 to 12114 and the temporal change of this distance (relative velocity with respect to the vehicle 12100). By obtaining, it is possible to extract as the preceding vehicle a three-dimensional object that is the closest three-dimensional object on the traveling path of the vehicle 12100 and that travels in substantially the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or more). can.
  • a predetermined speed for example, 0 km / h or more.
  • the microcomputer 12051 can set an inter-vehicle distance to be secured in front of the preceding vehicle in advance, and can perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like in which the vehicle travels autonomously without depending on the operation of the driver.
  • the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that can be seen by the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is used via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging units 12101 to 12104.
  • pedestrian recognition includes, for example, a procedure for extracting feature points in an image captured by an imaging unit 12101 to 12104 as an infrared camera, and pattern matching processing for a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine.
  • the audio image output unit 12052 When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 outputs a square contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.
  • the above is an example of a vehicle control system to which the technology according to the present disclosure can be applied.
  • the technique according to the present disclosure can be applied to the imaging unit 12031 among the configurations described above.
  • the image pickup apparatus 100 or the like shown in FIG. 1 or the like can be applied to the image pickup unit 12031.
  • excellent operation of the vehicle control system can be expected.
  • the present technology can have the following configurations.
  • (1) The first photoelectric conversion unit arranged inside the substrate and A charge storage unit arranged above the first photoelectric conversion unit and accumulating charges, and a charge storage unit.
  • An annular region arranged so as to surround the charge storage portion, and An imaging device including a first transfer gate that is arranged outside the annular region and transfers charges photoelectrically converted by the first photoelectric conversion unit.
  • (2) The annular region includes an insulator filled in an annular groove formed in the depth direction along the surface of the substrate, and a conductor arranged in a part of the insulator.
  • the imaging device according to (1) The imaging device according to (1).
  • (3) The image pickup apparatus according to (2), wherein the bottom portion of the annular region in the depth direction of the substrate is arranged above the upper end of the first photoelectric conversion unit.
  • a read-out circuit for reading out the charge converted by photoelectric in the first photoelectric conversion unit is provided.
  • the charge storage unit is A charge storage region provided above the first photoelectric conversion unit and The imaging device according to any one of (1) to (4), further comprising an electrode arranged above the charge storage region including a part of the annular region.
  • the imaging device according to (5), wherein one end of the electrode is arranged inside the annular region.
  • the imaging apparatus according to (5) or (6), wherein the first photoelectric conversion unit and the charge storage region are regions in which first conductive type impurity ions are injected and diffused.
  • a second conductive type impurity ion was injected and diffused between the first photoelectric conversion unit and the charge storage region and between the first photoelectric conversion unit and the first transfer gate.
  • the imaging apparatus according to any one of (5) to (7), which comprises a diffusion region.
  • the first transfer gate is a vertical gate extending in the depth direction of the substrate.
  • a second photoelectric conversion unit arranged in a place different from the first photoelectric conversion unit in the substrate.
  • the imaging apparatus comprising a second transfer gate for transferring the charge photoelectrically converted by the second photoelectric conversion unit to the charge storage unit.
  • the image pickup apparatus according to (11), wherein the first photoelectric conversion unit has a larger area of a light receiving surface and higher sensitivity than the second photoelectric conversion unit.
  • the charge storage unit stores the charge photoelectrically converted by the first photoelectric conversion unit.
  • a pixel array unit having a plurality of pixels, each of which performs photoelectric conversion, and The drive unit that drives the pixel array unit and An electronic device including a signal processing unit that performs signal processing based on an electrical signal photoelectrically converted by the pixel array unit.
  • At least one of the plurality of pixels The first photoelectric conversion unit arranged inside the substrate and A charge storage unit arranged above the first photoelectric conversion unit and accumulating charges, and a charge storage unit. An annular region arranged so as to surround the charge storage portion, and An electronic device having a first transfer gate, which is arranged outside the annular region and transfers charges photoelectrically converted by the first photoelectric conversion unit.
  • At least one of the plurality of pixels is A second photoelectric conversion unit arranged in a place different from the first photoelectric conversion unit in the substrate, The electronic device according to (14), further comprising a second transfer gate that transfers the charge photoelectrically converted by the second photoelectric conversion unit to the charge storage unit.
  • the image pickup apparatus wherein the first photoelectric conversion unit has a larger area of a light receiving surface and higher sensitivity than the second photoelectric conversion unit.
  • the first photoelectric conversion unit is used to generate an image
  • the second photoelectric conversion unit and the charge storage unit are used to have a more dynamic range than the image captured under low illuminance.
  • the electronic device comprising a signal processing unit that generates a wide captured image of the above.
  • the annular region includes an insulator filled in an annular groove formed in the depth direction along the surface of the substrate, and a conductor arranged in a part of the insulator.
  • 100 image pickup device 101 first photoelectric conversion unit, 102 first transfer gate, 103 second photoelectric conversion unit, 104 second transfer gate, 105 third transfer gate, 106 capacitance unit, 107 reset gate, 108 FD unit, 109 amplification Transistor, 110 selection transistor, 111 pixel array unit, 112 vertical drive unit, 113 ramp wave module, 114 column signal processing unit, 115 clock module, 116 data storage unit, 117 horizontal drive unit, 118 system control unit, 119 signal processing unit , 120 readout circuit, 121 sensor pixel, 122 pixel drive line, 123 vertical signal line, 131 constant current source, 132 upper electrode, 133 annular region, 134 silicon substrate, 135 p-type region, 136 SiO2 film, 137 SiN film, 138. Resist film, 139 p-type region

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  • Physics & Mathematics (AREA)
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  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Le problème décrit par la présente invention est de fournir un dispositif d'imagerie et un appareil électronique qui ne réduisent pas l'efficacité de génération de photoporteurs même en présence d'une capacité intra-pixel (unité de stockage de charge). La solution selon l'invention porte sur un dispositif d'imagerie qui comprend : une première unité de conversion photoélectrique disposée dans un substrat ; une unité de stockage de charge qui est disposée au-dessus de la première unité de conversion photoélectrique et stocke une charge ; une région annulaire entourant l'unité de stockage de charge ; et une première grille de transfert qui est disposée à l'extérieur de la région annulaire et transfère la charge convertie de manière photoélectrique par la première unité de conversion photoélectrique.
PCT/JP2021/000241 2020-01-15 2021-01-06 Dispositif d'imagerie et appareil électronique WO2021145257A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013207321A (ja) * 2012-03-27 2013-10-07 Sony Corp 固体撮像装置、及び、電子機器
JP2016197617A (ja) * 2015-04-02 2016-11-24 パナソニックＩｐマネジメント株式会社 撮像装置
WO2018221261A1 (fr) * 2017-06-02 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et appareil électronique
JP2019160858A (ja) * 2018-03-08 2019-09-19 パナソニックＩｐマネジメント株式会社 固体撮像素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013207321A (ja) * 2012-03-27 2013-10-07 Sony Corp 固体撮像装置、及び、電子機器
JP2016197617A (ja) * 2015-04-02 2016-11-24 パナソニックＩｐマネジメント株式会社 撮像装置
WO2018221261A1 (fr) * 2017-06-02 2018-12-06 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et appareil électronique
JP2019160858A (ja) * 2018-03-08 2019-09-19 パナソニックＩｐマネジメント株式会社 固体撮像素子

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