WO2021135805A1 - 一种化学机械抛光液及其在铜抛光中的应用 - Google Patents
一种化学机械抛光液及其在铜抛光中的应用 Download PDFInfo
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- WO2021135805A1 WO2021135805A1 PCT/CN2020/133614 CN2020133614W WO2021135805A1 WO 2021135805 A1 WO2021135805 A1 WO 2021135805A1 CN 2020133614 W CN2020133614 W CN 2020133614W WO 2021135805 A1 WO2021135805 A1 WO 2021135805A1
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- WIPO (PCT)
- Prior art keywords
- mechanical polishing
- chemical mechanical
- copper
- polishing liquid
- polishing
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 62
- 239000010949 copper Substances 0.000 title claims abstract description 50
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 239000007788 liquid Substances 0.000 title claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 12
- 239000007800 oxidant agent Substances 0.000 claims abstract description 10
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 7
- 125000005233 alkylalcohol group Chemical group 0.000 claims abstract description 5
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 15
- 230000003746 surface roughness Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000003899 bactericide agent Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the invention relates to a chemical mechanical polishing liquid and its application in copper polishing.
- CMP chemical mechanical polishing
- the CMP process uses an abrasive-containing mixture and a polishing pad to polish the surface of the integrated circuit.
- the substrate is directly contacted with a rotating polishing pad, and a load is used to apply pressure on the back of the substrate.
- the pad and the operating table rotate while maintaining a downward force on the back of the substrate to apply abrasive and chemically active solution (usually referred to as polishing liquid or polishing slurry) on the pad.
- polishing liquid or polishing slurry abrasive and chemically active solution
- CMP chemical mechanical polishing
- the present invention provides a chemical mechanical polishing solution, which includes a nonionic surfactant, abrasive particles and an oxidant.
- the non-ionic surfactant is (ethoxy) x-(butoxy) y-alkyl alcohol, wherein x is 5-20, y is 5-20, and the alkyl group has 11- to carbon atoms. 15 straight or branched chain.
- the mass percentage concentration of the nonionic surfactant is 0.0005 to 0.5 wt%. Preferably it is 0.001 to 0.1 wt%.
- the abrasive particles are one or more of silicon dioxide, aluminum oxide, ceria, and aluminum-doped silicon dioxide.
- the mass percentage concentration of the abrasive particles is 0.1-20 wt%, preferably 0.1-10 wt%.
- the particle size of the abrasive particles is 20 to 200 nm, preferably 30 to 120 nm.
- the oxidant is hydrogen peroxide, and the mass percentage concentration of the oxidant is 0.05-5 wt%.
- the pH value of the chemical mechanical polishing liquid is 4-12, preferably 5-11.
- the chemical mechanical polishing liquid in the present invention may also contain other additives in the art such as pH adjusters and bactericides.
- the chemical mechanical polishing liquid of the present invention can be prepared by concentration, and is diluted with deionized water before use and an oxidant is added to the concentration range of the present invention.
- the present invention also provides the application of the above-mentioned chemical mechanical polishing liquid in copper polishing.
- the reagents used in this application are all commercially available.
- wt% in the present invention all refers to the mass percentage concentration.
- the present invention aims to provide a chemical mechanical polishing liquid that can be used for copper polishing, barrier layer polishing and through silicon via (TSV) polishing and other processes that need to remove copper substrates in multiple applications, using the chemical mechanical polishing
- the liquid can obtain the copper removal rate that meets the process requirements, while reducing and improving the polished copper surface roughness and copper surface contaminant particles, ensuring that the polished copper surface quality can meet the requirements of the copper surface under various process conditions .
- Preparation method According to the formula in Table 1, mix the components other than the oxidizer uniformly, and adjust to the required pH value with KOH or HNO 3. Add oxidant before use and mix well. Water is the balance.
- Polishing method Polish the copper wafer with the polishing liquid prepared according to the formula in Table 1 according to the following polishing conditions.
- Use a metal film thickness gauge to measure the resistivity of copper before and after polishing, and calculate the copper before and after polishing The thickness of the obtained copper removal rate, the surface roughness of the polished copper wafer tested with the atomic force microscope AFM, and the number of pollutant particles on the polished copper wafer surface tested with the defect scanner SP2. The polishing and test results are shown in the table. 2.
- the polishing liquid of the present invention can obtain a copper removal rate that meets the process requirements while ensuring that a better copper surface quality is obtained after polishing, and can meet the requirements for the copper surface under various process conditions.
- the chemical mechanical polishing solution of the present application can obtain a copper removal rate that meets the process requirements, while improving and reducing the copper surface roughness and the number of pollutant particles on the copper surface after polishing, so as to ensure the quality of the copper surface after polishing; and
- the chemical mechanical polishing liquid of the present application has a wide applicable pressure range. Even at a higher polishing pressure, the chemical mechanical polishing liquid of the present application has a high copper removal rate and can also obtain better copper surface quality. Overcome the technical prejudice in the existing technology.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
一种化学机械抛光液及其在铜抛光中的应用，所述化学机械抛光液包括非离子表面活性剂、研磨颗粒和氧化剂, 述的非离子表面活性剂为(乙氧基)x化(丁氧基)y化烷基醇，其中x为5～20，y为5～20，烷基为碳原子数为11～15的直链或支链。
Description
本发明涉及一种化学机械抛光液及其在铜抛光中的应用。
在集成电路的制造过程中，硅晶圆基片上往往构建了成千上万的结构单元，这些结构单元通过多层金属互连进一步形成功能性电路和元器件。随着金属互连技术的发展和布线层数的增加，化学机械抛光(CMP)已经广泛应用于芯片制造过程中的表面平坦化。这些平坦化的芯片表面有助于多层集成电路的生产，且防止将电介层涂覆在不平表面上引起的畸变。
CMP工艺就是使用一种含磨料的混合物和抛光垫抛光集成电路表面。在典型的化学机械抛光方法中，将衬底直接与旋转抛光垫接触，用一载重物在衬底背面施加压力。在抛光期间，垫片和操作台旋转，同时在衬底背面保持向下的力，将磨料和化学活性溶液(通常称为抛光液或抛光浆料)涂于垫片上，该抛光液与正在抛光的薄膜发生化学反应开始进行抛光过程。
随着器件特征尺寸的持续减小，互连性能已成为制约芯片整体性能的关键，而制约互连性能的最大挑战就是尺寸效应造成的电阻电容延迟现象(RC delay)，因此降低RC延迟成为集成电路发展中的重要内容。铜具有电阻率低、抗电迁移能率高和RC延迟时间短的优点，已经取代铝成为集成电路的主要互连金属。但由于无法对铜材进行有效的等离子蚀刻或湿法蚀刻，因而对于铜作为互连材料的布线工艺来说，目前普遍采用的技术方案就是双大马士革(Dual Damascene)镶嵌工艺，即：在第一层里形成沟槽，在沟槽内填充铜阻挡层和铜，形成金属导线并覆盖在介电层上。然后通过化学机械抛光(CMP)工艺将介电层上多余的铜/铜阻挡层除去，在沟槽里留下单个互连线。CMP技术用于铜互连工艺，使0.13μm后端铜制程变为现实，不同的工艺和制程对铜化学机械抛光液有着不同的技术要求，且随着集成电路的发展，对铜化学机械抛光工艺的要求也越来越高，不仅需要满足不同工艺和制程要求的铜的去除速率，还需要保证抛光后的铜的表面质量。铜的质地比较软，且容易发生氧化，在抛光过程中会形成由CuO、Cu
2O和Cu(OH)
2等构成的多孔氧化物层。所以铜比诸如二氧化硅(TEOS)等的硅材料或诸如钨的其他材料更 脆弱，很容易在抛光过程中造成划痕等表面损伤。
发明内容
为解决现有技术在抛光过程中铜表面容易造成损伤，导致表面粗糙度值大和污染物残留多的问题，本发明提供一种化学机械抛光液，包括非离子表面活性剂、研磨颗粒和氧化剂。
其中，所述非离子表面活性剂为(乙氧基)x化(丁氧基)y化烷基醇，其中x为5～20，y为5～20，烷基为碳原子数为11～15的直链或支链。所述非离子表面活性剂的质量百分比浓度为0.0005～0.5wt％。优选为0.001～0.1wt％。
其中，所述研磨颗粒为二氧化硅、三氧化二铝、二氧化铈、掺杂铝的二氧化硅中的一种或多种。所述研磨颗粒的质量百分比浓度为0.1～20wt％，优选为0.1～10wt％。所述研磨颗粒的粒径为20～200nm，优选为30～120nm。
其中，所述氧化剂为过氧化氢，所述氧化剂的质量百分比浓度为0.05～5wt％。
其中，所述化学机械抛光液的pH值为4～12，优选为5～11。
本发明中的化学机械抛光液中，还可以包含pH调节剂和杀菌剂等其他本领域的添加剂。
本发明的化学机械抛光液可以浓缩制备，在使用前用去离子水稀释并添加氧化剂至本发明的浓度范围。
本发明还提供上述化学机械抛光液在铜抛光中的应用。
本申请采用的试剂均市售可得。
应当理解的是，本发明所述wt％均指的是质量百分比浓度。
与现有技术相比较，本发明的优势在于：
本发明旨在提供一种可用于铜抛光、阻挡层抛光和硅通孔(Through Silicon Via,TSV)抛光等工艺中需去除铜基材的多种应用的化学机械抛光液，使用该化学机械抛光液可以在获得满足工艺要求的铜的去除速率的同时，降低和改善抛光后铜表面粗糙度和铜表面污染物颗粒，保证抛光后的铜表面质量能够满足各种工艺条件下对铜表面的要求。
下面通过实施例的方式进一步说明本发明，但并不以此将本发明限制在所述的实施例范围之中。
实施例
制备方法：按照表1中的配方，将除氧化剂以外的其他组分混合均匀，用KOH或HNO
3调节到所需要的pH值。使用前加氧化剂，混合均匀即可。水为余量。
表1.对比例1～2和实施例1～11的配方
效果实施例
抛光方法：将按照表1中的配方制得的抛光液按照下述抛光条件对铜晶圆进行抛光， 抛光条件：抛光机台为12”Reflexion LK机台，抛光垫为IC1010pad，下压力为1.0～3.0psi，转速为抛光盘/抛光头＝93/87rpm，抛光液流速为300ml/min，抛光时间为1min。用金属薄膜测厚仪测量抛光前后的铜的电阻率，计算出抛光前后的铜的厚度，获得铜的去除速率，用原子力显微镜AFM测试的抛光后的铜晶圆表面粗糙度，用缺陷扫描仪SP2测试的抛光后的铜晶圆表面污染物颗粒数。抛光及测试结果见表2。
表2.对比例1～2和实施例1～11对Cu的去除速率、表面粗糙度、表面污染物颗粒数
如表2所示：相对于对比例1-2，本申请的实施例1-11中加入了乙氧基丁氧基化烷基醇，在不影响Cu去除速率的情况下极大的改善了抛光后Cu的表面粗糙度，并有效的减少了表面污染物的残留。从实施例4～5可看出即使在高的下压力3.0psi的抛光条件下，也能获得较好的Cu的表面质量。因而采用本发明的抛光液在获得满足工艺要求的铜去除 速率的同时保证抛光后获得较好的铜表面质量，能够满足各种工艺条件下对铜表面的要求。
综上，本申请的化学机械抛光液可以在获得满足工艺要求的铜的去除速率的同时，改善和降低抛光后铜表面粗糙度和铜表面污染物颗粒数，保证抛光后的铜表面质量；且本申请的化学机械抛光液适用压力范围大，即使在较高抛光压力下，本申请的化学机械抛光液在具有高的铜去除速率的同时，也能获得较好的铜表面质量。克服了现有技术中的技术偏见。
应当注意的是，本发明中的含量，如果没有特别说明，均为质量百分比含量。
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。
Claims (9)
- 一种化学机械抛光液，其特征在于，包括非离子表面活性剂、研磨颗粒和氧化剂，其中，所述的非离子表面活性剂为(乙氧基)x化(丁氧基)y化烷基醇，其中x为5～20，y为5～20，烷基为碳原子数为11～15的直链或支链。
- 如权利要求1所述的化学机械抛光液，其特征在于，所述乙氧基化丁氧基化烷基醇的质量浓度为0.0005～0.5wt％。
- 如权利要求2所述的化学机械抛光液，其特征在于，所述乙氧基化丁氧基化烷基醇的质量浓度为0.001～0.1wt％。
- 如权利要求1所述的化学机械抛光液，其特征在于，所述研磨颗粒为二氧化硅、三氧化二铝、二氧化铈、掺杂铝的二氧化硅中的一种或多种。
- 如权利要求1所述的化学机械抛光液，其特征在于，所述研磨颗粒的质量浓度为0.1～20wt％。
- 如权利要求1所述的化学机械抛光液，其特征在于，所述氧化剂为过氧化氢。
- 如权利要求1所述的化学机械抛光液，其特征在于，所述氧化剂的质量浓度为0.05～5wt％。
- 如权利要求1所述的化学机械抛光液，其特征在于，所述化学机械抛光液的pH值为4～12。
- 一种如权利要求1-8任一所述的化学机械抛光液在铜抛光中的应用。
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| CN116124807A (zh) * | 2022-12-01 | 2023-05-16 | 江西省科学院应用物理研究所 | 一种异质金属增强铜基复合材料ebsd试样的制备方法 |
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| KR20220120585A (ko) | 2022-08-30 |
| CN113122143B (zh) | 2024-03-08 |
| TW202127531A (zh) | 2021-07-16 |
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