WO2021114393A1 - 抗压液晶显示结构及其制造方法 - Google Patents

抗压液晶显示结构及其制造方法 Download PDF

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Publication number
WO2021114393A1
WO2021114393A1 PCT/CN2019/127781 CN2019127781W WO2021114393A1 WO 2021114393 A1 WO2021114393 A1 WO 2021114393A1 CN 2019127781 W CN2019127781 W CN 2019127781W WO 2021114393 A1 WO2021114393 A1 WO 2021114393A1
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Prior art keywords
liquid crystal
substrate
layer
crystal display
display structure
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PCT/CN2019/127781
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English (en)
French (fr)
Inventor
陈静
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Tcl华星光电技术有限公司
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Priority to US16/627,821 priority Critical patent/US11609467B2/en
Publication of WO2021114393A1 publication Critical patent/WO2021114393A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/161—Gaskets; Spacers; Sealing of cells; Filling or closing of cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/1533—Constructional details structural features not otherwise provided for
    • G02F2001/1536—Constructional details structural features not otherwise provided for additional, e.g. protective, layer inside the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements

Definitions

  • the present disclosure relates to the field of display technology, in particular to a pressure-resistant liquid crystal display structure with pressure-resistant capability and a manufacturing method thereof.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display (TFT LCD) has been widely used.
  • a columnar support 490 is provided on the thin film transistor 290 between the first substrate 190 and the second substrate 390 to support the first substrate 190 and the second substrate 390.
  • the substrate 390 The substrate 390.
  • liquid crystal molecules 592 will diffuse when TFT-LCD is pressed. For example, when the panel is continuously tapped, liquid crystal molecules 592 will diffuse.
  • the vertical arrangement of liquid crystal display screens is particularly serious due to the unique vertical arrangement of liquid crystal molecules 592. .
  • the purpose of the present invention is to solve the technical problems that the existing liquid crystal display structure is slow to recover after being squeezed by an external force, and the position of the columnar support is offset due to the squeezing, and cannot be recovered, or the recovery is slow.
  • an object of the present disclosure is to provide a liquid crystal display structure and a manufacturing method thereof that can utilize the columnar support and the protrusions and recesses of the thin film transistor to engage with each other, so as to prevent the panel from being squeezed. When causing the columnar support to deviate.
  • a pressure-resistant liquid crystal display structure which includes a first substrate, a plurality of thin film transistors, a second substrate, a plurality of columnar supports, and a liquid crystal layer.
  • the plurality of thin film transistors includes a gate electrode, a gate insulating layer, an amorphous silicon layer, an Aum contact layer, a drain metal layer, a source metal layer, and a protective layer.
  • the gate electrode is arranged on the first substrate; the gate insulating layer is arranged on the gate electrode; the amorphous silicon layer is arranged on the gate insulating layer; the ohm contact layer is arranged on the amorphous silicon layer; the drain metal layer is arranged On the ohm contact layer; the source metal layer is arranged on the ohm contact layer; the protective layer is arranged on the drain metal layer and the source metal layer, and the protective layer includes at least one first protrusion and at least one first Depression.
  • One end of each columnar support is connected with the second substrate, and the other end includes at least a second protruding part and at least one second recessed part, and is arranged on the protective layer on each thin film transistor.
  • the liquid crystal layer is disposed between the first substrate and the second substrate, and includes a plurality of liquid crystal molecules, and each liquid crystal molecule is arranged in a vertical direction from the direction of the first substrate to the direction of the second substrate.
  • each of the columnar supports is clamped on the protective layer.
  • each columnar support is clamped on the protective layer, each of the first protrusions and each of the second recesses, each of the second protrusions and each of the first A depression is in contact.
  • the first substrate includes an alignment film
  • the alignment film includes a plurality of tilt angles relative to a horizontal direction
  • the liquid crystal layer is disposed at the plurality of tilt angles.
  • the columnar support includes an elastic material or a photoresist material.
  • the first substrate and the second substrate include polarizers and transparent materials.
  • the top surface of the thin film transistor includes bumps.
  • the second substrate includes a filter layer.
  • the filter layer includes a red filter area, a blue filter area, and a green filter area.
  • each columnar support is arranged on the filter layer.
  • the present disclosure further provides a method for manufacturing a pressure-resistant liquid crystal display structure, which includes the following steps:
  • a plurality of thin film transistors are formed, and forming each thin film transistor includes the following steps:
  • each end of the columnar support is connected with the second substrate, and the other end includes at least one second protruding part and at least one second recessed part;
  • the liquid crystal layer is arranged between the first substrate and the second substrate, and the liquid crystal layer includes a plurality of liquid crystal molecules, and each liquid crystal molecule is arranged in a vertical direction from the direction of the first substrate to the direction of the second substrate.
  • the manufacturing method of the pressure-resistant liquid crystal display structure of the present disclosure further includes forming each of the columnar support members by etching to form each of the second protrusions and each of the second protrusions. Depression.
  • the manufacturing method of the stress-resistant liquid crystal display structure of the present disclosure further includes forming the first protrusions and the first recesses on the protective layer by etching.
  • each of the columnar supports is clamped on the protective layer.
  • each columnar support is clamped on the protective layer, each of the first protrusions and each of the second recesses, each of the second protrusions and each of the first A depression in contact
  • the first substrate includes an alignment film
  • the alignment film includes a plurality of tilt angles relative to a horizontal direction
  • the liquid crystal layer is disposed at the plurality of tilt angles.
  • the columnar support includes an elastic material or a photoresist material.
  • the first substrate and the second substrate include polarizers and transparent materials.
  • the top surface of the thin film transistor includes bumps.
  • the second substrate includes a filter layer
  • the filter layer includes a red filter area, a blue filter area, and a green filter area
  • each columnar support is formed on the filter layer.
  • the technical effect of the present invention is that the pressure-resistant liquid crystal display structure and the manufacturing method thereof provided by the present disclosure can utilize the columnar support and the protrusions and recesses of the thin film transistor to engage with each other to prevent the panel from being squeezed. Resulting in the deviation of the cylindrical support.
  • FIG. 1 is a first schematic diagram of a conventional liquid crystal display structure
  • FIG. 2 is a second schematic diagram of a conventional liquid crystal display structure
  • FIG. 3 is a first schematic diagram of the pressure-resistant liquid crystal display structure of the disclosure.
  • FIG. 4 is a second schematic diagram of the pressure-resistant liquid crystal display structure of the disclosure.
  • FIG. 5 is a third schematic diagram of the compression-resistant liquid crystal display structure of the disclosure.
  • FIG. 6 is a fourth schematic diagram of the compression-resistant liquid crystal display structure of the disclosure.
  • FIG. 7 is a fifth schematic diagram of the compression-resistant liquid crystal display structure of the disclosure.
  • FIG. 8 is the first flowchart of the manufacturing method of the stress-resistant liquid crystal display structure disclosed herein.
  • FIG. 9 is a second flowchart of the manufacturing method of the stress-resistant liquid crystal display structure disclosed herein.
  • FIG. 3 to FIG. 6 are the first schematic diagram to the fourth schematic diagram of the stress-resistant liquid crystal display structure of the disclosure.
  • the pressure-resistant liquid crystal display structure of the present disclosure includes a first substrate 100, a plurality of thin film transistors 200, a second substrate 300, a plurality of columnar supports 400, and a liquid crystal layer 500.
  • the plurality of thin film transistors 200 include a gate electrode 202, a gate insulating layer 204, an amorphous silicon layer 206, an Aum contact layer 208, a drain metal layer 210, a source metal layer 212, and a protective layer 214.
  • the first substrate 100 and the second substrate 300 include a polarizer and a transparent material, so that the light from the backlight source or the light from the measuring light source can pass smoothly, so as to provide the LCD display with good image quality and sufficient brightness. .
  • the gate electrode 202 is disposed on the first substrate 100 to receive a voltage from the first substrate 100 to control the conduction of the drain metal layer 210 and the source metal layer 212; the gate insulating layer 204 is disposed on the gate electrode 202 , To reduce leakage current.
  • the amorphous silicon layer 206 is disposed on the gate insulating layer 204, and the semiconductor layer is used as a switch channel.
  • the Aum contact layer 208 is disposed on the amorphous silicon layer 206, and in one embodiment, pentavalent elements, such as The arsenic, phosphorus, and antimony plasmas form channels with high electron concentration and form ohm contacts.
  • the drain metal layer 210 is disposed on the ohm contact layer 208, and the source metal layer 212 is disposed on the ohm contact layer 208. In one embodiment, the drain metal layer 210 is disposed on the same plane opposite to the drain metal layer 210 through the control gate.
  • the electrode 202 allows current to flow from the source metal layer 212 to the drain metal layer 210 via the amorphous silicon layer 206.
  • the protective layer 214 is disposed on the drain metal layer 210 and the source metal layer 212 to protect the thin film transistor 200, and the protective layer 214 includes at least one first protrusion 2141 and at least one first recess 2142. Therefore, in an implementation In the example, the top surface of the thin film transistor 200 may have bumps.
  • each columnar support 400 is connected to the second substrate 300, and the other end includes at least one second protrusion 4001 and at least one second recess 4002, and is disposed on the protective layer 214 on each thin film transistor 200, and
  • the columnar support 400 includes an elastic material, so it can return to an initial state after being compressed.
  • the second substrate 300 includes a filter layer 302, and the filter layer 302 includes a red filter area, a blue filter area, and a green filter area.
  • Each columnar support 400 is formed on the filter layer 302.
  • the columnar support 400 includes a photoresist material, so the columnar support 400 can be formed on the filter layer 302 through various semiconductor manufacturing processes such as coating, exposure, and development.
  • the liquid crystal layer 500 is disposed between the first substrate 100 and the second substrate 300, and includes a plurality of liquid crystal molecules 502, and each liquid crystal molecule 502 is arranged in a vertical direction from the direction of the first substrate 100 to the direction of the second substrate 300, so
  • the liquid crystal layer 500 of the pressure-resistant liquid crystal display structure of the present disclosure is a vertical alignment liquid crystal (VA, Vertical Alignment liquid crystal), but it is not limited to this, and the liquid crystal molecules 502 may be arranged in other ways according to actual needs, for example, twisted Nematic liquid crystal (TN, twisted nematic liquid crystal).
  • VA Vertical Alignment liquid crystal
  • each columnar support 400 is clamped on the protective layer 214, and when each columnar support 400 is clamped on the protective layer 214 At this time, as shown in FIGS. 4 and 6, each first protrusion 2141 and each second recess 4002 are in contact with each second protrusion 4001 and each first recess 2142.
  • the second substrate 300 when the surface of the liquid crystal display is continuously tapped, the second substrate 300 will receive the stress toward the first substrate 100.
  • the first protrusions 2141 and the second recesses 4002 and the second protrusions The out portion 4001 and each first recessed portion 2142 are in contact with each other, so that each columnar support 400 is clamped on the protective layer 214. Therefore, the phenomenon of diffusion of the liquid crystal molecules 502 in the liquid crystal layer 500 can be reduced, and the diffusion of the liquid crystal molecules 502 can be reduced. It returns to the initial state in a short time, for example, in one embodiment, it can return to the initial state in 5 seconds.
  • the first substrate 100 includes an alignment film 102
  • the alignment film 102 includes a plurality of tilt angles 1024 relative to the horizontal direction.
  • the multiple inclination angles 1024 are between 1 degree and 10 degrees, which can control the arrangement of the liquid crystal molecules 502 in the liquid crystal layer 500 and make the image quality of the liquid crystal display better.
  • the present disclosure further provides a method for manufacturing a pressure-resistant liquid crystal display structure, which includes the following steps:
  • a first substrate 100 is provided, and in an embodiment, the first substrate 100 includes a polarizer and a transparent material, so that the light from the backlight source or the side light source can pass smoothly, so as to provide a good and good liquid crystal display. Image quality with sufficient brightness.
  • S102 forming a plurality of thin film transistors 200, and forming each thin film transistor 200 includes the following steps:
  • S201 forming a gate electrode 202 on the first substrate 100 to receive a voltage from the first substrate 100 to control the conduction of the drain metal layer 210 and the source metal layer 212.
  • S202 forming a gate insulating layer 204 on the gate electrode 202 to reduce leakage current.
  • S203 forming an amorphous silicon layer 206 on the gate insulating layer 204, where the amorphous silicon layer 206 is a semiconductor layer as a channel for the switch.
  • S204 forming an ohm contact layer 208 on the amorphous silicon layer 206, and in one embodiment, pentavalent elements, such as arsenic, phosphorus, and antimony plasma can be doped to form a high electron concentration
  • pentavalent elements such as arsenic, phosphorus, and antimony plasma can be doped to form a high electron concentration
  • the passages form Aum contacts.
  • S206 forming a source metal layer 212 on the ohm contact layer 208, and in one embodiment, the source metal layer 212 and the drain metal layer 210 are disposed on the same plane opposite to each other, and the gate electrode 202 is controlled to cause current The source metal layer 212 flows to the drain metal layer 210 through the amorphous silicon layer 206.
  • S207 Form a protective layer 214 on the drain metal layer 210 and the source metal layer 212 to protect the thin film transistor 200, and the protective layer 214 includes at least one first protrusion 2141 and at least one first recess 2142. In the embodiment, it further includes forming the first protrusions 2141 and the first recesses 2142 on the protective layer 214 by etching.
  • the second substrate 300 includes a polarizer and a transparent material, so that the light from the backlight source or the light from the measuring light source can pass smoothly, so as to provide good brightness and brightness of the liquid crystal display Sufficient image quality.
  • S104 Form a plurality of columnar supports 400 on the second substrate 300, and one end of each columnar support 400 is connected to the second substrate 300, and the other end includes at least one second protrusion 4001 and at least one first Two recesses 4002, and in one embodiment, further includes forming each second protrusion 4001 and each second recess 4002 by etching after each columnar support 400 is formed.
  • S106 arranging the liquid crystal layer 500 between the first substrate 100 and the second substrate 300, and the liquid crystal layer 500 includes a plurality of liquid crystal molecules 502, each liquid crystal molecule 502 from the direction of the first substrate 100 toward the second substrate 300 in a vertical direction Arranged on.
  • steps S207 and S104 in addition to forming the first protrusions 2141, each of the first recesses 2142, each of the second protrusions 4001, and each of the second recesses 4002 by etching, it may also include coating.
  • Various semiconductor manufacturing processes such as cloth, exposure, and development are used to form the first protrusions 2141, each of the first recesses 2142, each of the second protrusions 4001, and each of the second recesses 4002.
  • each columnar support 400 is clamped on the protective layer 214, and when each columnar support 400 is clamped on the protective layer 214 At this time, as shown in FIGS. 4 and 6, each first protrusion 2141 and each second recess 4002 are in contact with each second protrusion 4001 and each first recess 2142.
  • the second substrate 300 when the surface of the liquid crystal display is continuously tapped, the second substrate 300 will receive the stress toward the first substrate 100.
  • the first protrusions 2141 and the second recesses 4002 and the second protrusions The out portion 4001 and each first recessed portion 2142 are in contact with each other, so that each columnar support 400 is clamped on the protective layer 214. Therefore, the phenomenon of diffusion of the liquid crystal molecules 502 in the liquid crystal layer 500 can be reduced, and the diffusion of the liquid crystal molecules 502 can be reduced. It returns to the initial state in a short time, for example, in one embodiment, it can return to the initial state in 5 seconds.
  • the pressure-resistant liquid crystal display structure and its manufacturing method provided by the present disclosure can utilize the columnar support 400 and the protrusions and recesses of the thin film transistor 200 to engage with each other to prevent the panel from being squeezed. When pressed, the cylindrical support is deflected.

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Abstract

本揭示提供一种抗压液晶显示结构及其制造方法。抗压液晶显示结构包括第一基板、多个薄膜晶体管、第二基板、多个柱形支撑件以及液晶层。多个薄膜晶体管具有保护层包括至少一个第一凸出部及至少一个第一凹陷部。各柱形支撑件一端与第二基板相连接，另一端包括至少第二凸出部及至少一个第二凹陷部，并设置在各薄膜晶体管上的保护层上。液晶层设置在第一基板及第二基板之间。其中当第二基板接受朝向第一基板的应力时，各柱形支撑件卡合在保护层上，因此可减少液晶层中的液晶分子扩散的现象，且液晶分子的扩散可在短时间内回复至初始状态。

Description

抗压液晶显示结构及其制造方法 技术领域
本揭示涉及显示技术领域，特别是一种具有抗压能力的抗压液晶显示结构及其制造方法。
 背景技术
TFT-LCD(Thin Film Transistor-Liquid Crystal Display ,TFT LCD)已被广泛的应用。为了保持盒厚的均一性，如图1及图2所示，在第一基板190及第二基板390之间於薄膜晶体管290上设置柱形支撑件490，以支撑第一基板190及第二基板390。
通常按压TFT-LCD 时会出现液晶分子592扩散，例如连续拍打面板时会出现液晶分子592扩散，而垂直排列液晶的显示屏幕由于其液晶分子592独有的垂直排列方式而使得按压液晶扩散尤为严重。
此问题产生的原因：1.面板受外力挤压后恢复较慢。2. 如图2所示柱形支撑件490收到挤压造成位置偏移，无法回复，或回复较慢。
因此，需要一种具有抗压能力的抗压液晶显示结构及其制造方法，以解决现有技术存在的问题。
 技术问题
本发明的目的在于，解决现有液晶显示结构受外力挤压后恢复较慢且柱形支撑件收到挤压造成位置偏移，无法回复，或回复较慢的技术问题。
 技术解决方案
为解决上述技术问题，本揭示的一目的在于提供一种可利用柱形支撑件及薄膜晶体管的凸出部及凹陷部相互卡合的液晶显示结构及其制造方法，以防止面板在受到挤压时造成柱形支撑件偏移。
基于上述目的，本揭示提供一种抗压液晶显示结构，其包括第一基板、多个薄膜晶体管、第二基板、多个柱形支撑件以及液晶层。多个薄膜晶体管包括栅极电极、栅极绝缘层、非晶硅层、奥姆接触层、漏极金属层、源极金属层及保护层。栅极电极设置在第一基板上；栅极绝缘层设置在栅极电极上；非晶硅层设置在栅极绝缘层上；奥姆接触层设置在非晶硅层上；漏极金属层设置在奥姆接触层上；源极金属层设置在奥姆接触层上；保护层设置在漏极金属层及源极金属层上，且保护层包括至少一个第一凸出部及至少一个第一凹陷部。各柱形支撑件一端与第二基板相连接，另一端包括至少第二凸出部及至少一个第二凹陷部，并设置在各薄膜晶体管上的保护层上。液晶层设置在第一基板及第二基板之间，且包括多个液晶分子，各液晶分子自第一基板方向朝向第二基板方向在一垂直方向上排列。
于本揭示其中的一实施例中，其特征在于，当第二基板接受朝向第一基板的应力时，各柱形支撑件卡合在保护层上。
于本揭示其中的一实施例中，其特征在于，当各柱形支撑件卡合在保护层上时，各第一凸出部及各第二凹陷部与各第二凸出部及各第一凹陷部相接触。
于本揭示其中的一实施例中，其特征在于，第一基板包括配向膜，且配向膜包括相对水平方向的多个倾角，液晶层设置在多个倾角上。
于本揭示其中的一实施例中，其特征在于，柱形支撑件包括弹性材料或光阻材料。
于本揭示其中的一实施例中，其特征在于，第一基板及第二基板包括偏光片、透明材料。
于本揭示其中的一实施例中，其特征在于，薄膜晶体管的顶表面包括凸块。
于本揭示其中的一实施例中，其特征在于，第二基板包括滤光层。
于本揭示其中的一实施例中，其特征在于，滤光层包括红色滤光区、蓝色滤光区及绿色滤光区。
于本揭示其中的一实施例中，其特征在于，各柱形支撑件设置在所述滤光层上。
基于上述目的，本揭示再提供一种抗压液晶显示结构的制造方法，其包括下列步骤：
设置第一基板；
形成多个薄膜晶体管，且形成各薄膜晶体管包括下列步骤：
形成栅极电极在第一基板上；
形成栅极绝缘层在栅极电极上；
形成非晶硅层在栅极绝缘层上；
形成奥姆接触层在非晶硅层上；
形成漏极金属层在奥姆接触层上；
形成源极金属层在奥姆接触层上；
形成保护层在漏极金属层及源极金属层上，且保护层包括至少一个第一凸出部及至少一个第一凹陷部；
设置第二基板；
形成多个柱形支撑件在第二基板上，且各柱形支撑件端与第二基板相连接，另一端包括至少一个第二凸出部及至少一个第二凹陷部；
将各柱形支撑件的另一端设置在各薄膜晶体管上的保护层上；以及
设置液晶层在第一基板及第二基板之间，且液晶层包括多个液晶分子，各液晶分子自第一基板方向朝向第二基板方向在垂直方向上排列。
于本揭示其中的一实施例中，其特征在于，本揭示的抗压液晶显示结构的制造方法更包括在形成各柱形支撑件后，以蚀刻方式形成各第二凸出部及各第二凹陷部。
于本揭示其中的一实施例中，其特征在于，本揭示的抗压液晶显示结构的制造方法更包括在保护层上以蚀刻方式形成各第一凸出部及所述各第一凹陷部。
于本揭示其中的一实施例中，其特征在于，当第二基板接受朝向第一基板的应力时，各柱形支撑件卡合在保护层上。
于本揭示其中的一实施例中，其特征在于，当各柱形支撑件卡合在保护层上时，各第一凸出部及各第二凹陷部与各第二凸出部及各第一凹陷部相接触
于本揭示其中的一实施例中，其特征在于，第一基板包括配向膜，且配向膜包括相对在水平方向的多个倾角，液晶层设置在多个倾角上。
于本揭示其中的一实施例中，其特征在于，柱形支撑件包括弹性材料或光阻材料。
于本揭示其中的一实施例中，其特征在于，第一基板及第二基板包括偏光片、透明材料。
于本揭示其中的一实施例中，其特征在于，薄膜晶体管的顶表面包括凸块。
于本揭示其中的一实施例中，其特征在于，第二基板包括滤光层，滤光层包括红色滤光区、蓝色滤光区及绿色滤光区，各柱形支撑件形成在滤光层上。
为让本揭示的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下。
 有益效果
本发明的技术效果在于，本揭示所提供的抗压液晶显示结构及其制造方法，可利用柱形支撑件及薄膜晶体管的凸出部及凹陷部相互卡合，以防止面板在受到挤压时造成柱形支撑件偏移。
 附图说明
图1为习知的液晶显示结构的第一示意图；
图2为习知的液晶显示结构的第二示意图；
图3为本揭示的抗压液晶显示结构的第一示意图；
图4为本揭示的抗压液晶显示结构的第二示意图；
图5为本揭示的抗压液晶显示结构的第三示意图；
图6为本揭示的抗压液晶显示结构的第四示意图；
图7为本揭示的抗压液晶显示结构的第五示意图；
图8为本揭示的抗压液晶显示结构的制造方法的第一流程图；及
图9为本揭示的抗压液晶显示结构的制造方法的第二流程图。
 本发明的最佳实施方式
为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。
在图中，结构相似的单元是以相同标号表示。
请参阅图3至图6，图3至图6为本揭示的抗压液晶显示结构的第一示意图至第四示意图。本揭示的抗压液晶显示结构，包括第一基板100、多个薄膜晶体管200、第二基板300、多个柱形支撑件400以及液晶层500。多个薄膜晶体管200包括栅极电极202、栅极绝缘层204、非晶硅层206、奥姆接触层208、漏极金属层210、源极金属层212及保护层214。
在一实施例中，第一基板100及第二基板300包括偏光片、透明材料，以使得来自背光源的光线或是测光源的光线可顺利通过，以提供液晶显示器良好且亮度足够的影像质量。
栅极电极202设置在第一基板100上，以接收来自第一基板100的电压以控制漏极金属层210及源极金属层212的导通；栅极绝缘层204设置在栅极电极202上，以降低漏电流。
非晶硅层206设置在栅极绝缘层204上，为半导体层作为开关的通道，奥姆接触层208设置在非晶硅层206上，且在一实施例中可掺入五价元素，例如砷、磷、锑等离子，形成高电子浓度的通道，形成奥姆接触。
漏极金属层210设置在奥姆接触层208上，源极金属层212设置在奥姆接触层208上，且在一实施例中与漏极金属层210相对设置在同一平面上，经由控制栅极电极202，使得电流由源极金属层212经由非晶硅层206流向漏极金属层210。
保护层214设置在漏极金属层210及源极金属层212上，以保护薄膜晶体管200，且保护层214包括至少一个第一凸出部2141及至少一个第一凹陷部2142，因此在一实施例中薄膜晶体管200的顶表面可具有凸块。
各柱形支撑件400一端与第二基板300相连接，另一端包括至少一个第二凸出部4001及至少一个第二凹陷部4002，并设置在各薄膜晶体管200上的保护层214上，且在一实施例中，柱形支撑件400包括弹性材料，因此可在受压迫后回复至初始状态。
进一步说明，在一实施例中，第二基板300包括滤光层302，滤光层302包括红色滤光区、蓝色滤光区及绿色滤光区，各柱形支撑件400形成在滤光层302上，而在另一实施例中，柱形支撑件400包括光阻材料，因此柱形支撑件400可经由涂布、曝光、显影等各种半导体制造工序形成在滤光层302上。
液晶层500设置在第一基板100及第二基板300之间，且包括多个液晶分子502，且各液晶分子502自第一基板100方向朝向第二基板300方向在一垂直方向上排列，因此本揭示的抗压液晶显示结构的液晶层500为垂直排列液晶(VA, Vertical Alignment liquid crystal)，但不以此为限，亦可视实际需求将液晶分子502以其他方式排列，例如可为扭曲向列型液晶(TN, twisted nematic liquid crystal)。
在一实施例中，当第二基板300接受朝向第一基板100的应力时，各柱形支撑件400卡合在保护层214上，且当各柱形支撑件400卡合在保护层214上时，可如图4及图6所示，各第一凸出部2141及各第二凹陷部4002与各第二凸出部4001及各第一凹陷部2142相接触。
因此在一实施例中，当连续拍打液晶显示器表面时，第二基板300将会接受朝向第一基板100的应力，然而由于第一凸出部2141及各第二凹陷部4002与各第二凸出部4001及各第一凹陷部2142相接触，使得各柱形支撑件400卡合在保护层214上，因此可减少液晶层500中的液晶分子502扩散的现象，且液晶分子502的扩散可在短时间内回复至初始状态，例如，在一实施例中，可在5秒内回复至初始状态。
请参阅图7，并一并参阅图3至图6，在一实施例中，第一基板100包括配向膜102，且配向膜102包括相对水平方向的多个倾角1024，液晶层500设置在多个倾角1024上，例如，在一实施例中，多个倾角1024介于1度至10度，可控制液晶层500中的液晶分子502排列，并使得液晶显示器的影像质量更佳。
请参阅图8至图9，并一并参阅图3至图6，本揭示再提供一种抗压液晶显示结构的制造方法，包括下列步骤：
S101：设置一第一基板100，且在一实施例中，第一基板100包括偏光片、透明材料，以使得来自背光源的光线或是侧光源的光线可顺利通过，以提供液晶显示器良好且亮度足够的影像质量。
S102：形成多个薄膜晶体管200，且形成各薄膜晶体管200包括下列步骤：
S201：形成栅极电极202在第一基板100上，以接收来自第一基板100的电压以控制漏极金属层210及源极金属层212的导通。
S202：形成栅极绝缘层204在栅极电极202上，以降低漏电流。
S203：形成非晶硅层206在栅极绝缘层204上，非晶硅层206为半导体层作为开关的通道。
S204：形成奥姆接触层208在非晶硅层206上，且在一实施例中可掺入五价元素，例如砷、磷、锑等离子，形成形成高电子浓
Figure fa01
的通道，形成奥姆接触。
S205：形成漏极金属层210在奥姆接触层208上。
S206：形成源极金属层212在奥姆接触层208上，且在一实施例中，源极金属层212与漏极金属层210相对设置在同一平面上，经由控制栅极电极202，使得电流由源极金属层212经由非晶硅层206流向漏极金属层210。
S207：形成保护层214在漏极金属层210及源极金属层212上，以保护薄膜晶体管200，且保护层214包括至少一个第一凸出部2141及至少一个第一凹陷部2142，在一实施例中，更包括在保护层214上以蚀刻方式形成各第一凸出部2141及各第一凹陷部2142。
S103：设置第二基板300，且在一实施例中，第二基板300包括偏光片、透明材料，以使得来自背光源的光线或是测光源的光线可顺利通过，以提供液晶显示器良好且亮度足够的影像质量。
S104：形成多个柱形支撑件400在所述第二基板300上，且各柱形支撑件400一端与第二基板300相连接，另一端包括至少一个第二凸出部4001及至少一个第二凹陷部4002，且在一实施例中，更包括在形成各柱形支撑件400后，以蚀刻方式形成各第二凸出部4001及各第二凹陷部4002。
S105：将各柱形支撑件400的另一端设置在各薄膜晶体管200上的所述保护层214上。
S106：设置液晶层500在第一基板100及第二基板300之间，且液晶层500包括多个液晶分子502，各液晶分子502自第一基板100方向朝向第二基板300方向在一垂直方向上排列。
进一步说明，在步骤S207及S104中，除了可以蚀刻方式形成第一凸出部2141、各第一凹陷部2142、各第二凸出部4001及各第二凹陷部4002的外，亦可包括涂布、曝光、显影等各种半导体制造工序，以形成第一凸出部2141、各第一凹陷部2142、各第二凸出部4001及各第二凹陷部4002。
在一实施例中，当第二基板300接受朝向第一基板100的应力时，各柱形支撑件400卡合在保护层214上，且当各柱形支撑件400卡合在保护层214上时，可如图4及图6所示，各第一凸出部2141及各第二凹陷部4002与各第二凸出部4001及各第一凹陷部2142相接触。
因此在一实施例中，当连续拍打液晶显示器表面时，第二基板300将会接受朝向第一基板100的应力，然而由于第一凸出部2141及各第二凹陷部4002与各第二凸出部4001及各第一凹陷部2142相接触，使得各柱形支撑件400卡合在保护层214上，因此可减少液晶层500中的液晶分子502扩散的现象，且液晶分子502的扩散可在短时间内回复至初始状态，例如，在一实施例中，可在5秒内回复至初始状态。
因此，综上所述，本揭示所提供的抗压液晶显示结构及其制造方法，可利用柱形支撑件400及薄膜晶体管200的凸出部及凹陷部相互卡合，以防止面板在受到挤压时造成柱形支撑件偏移。
尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包括”相似的方式包括。
以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。

Claims (20)

  1. 一种抗压液晶显示结构，其特征在于，包括：
    第一基板；
    多个薄膜晶体管，包括：
    栅极电极，设置在所述第一基板上；
    栅极绝缘层，设置在所述栅极电极上；
    非晶硅层，设置在所述栅极绝缘层上；
    奥姆接触层，设置在所述非晶硅层上；
    漏极金属层，设置在所述奥姆接触层上；
    源极金属层，设置在所述奥姆接触层上；及
    保护层，设置在所述漏极金属层及所述源极金属层上，且所述保护层包括至少一个第一凸出部及至少一个第一凹陷部；
    第二基板；
    多个柱形支撑件，所述各柱形支撑件一端与所述第二基板相连接，另一端包括至少一个第二凸出部及至少一个第二凹陷部，并设置在所述各薄膜晶体管上的所述保护层上；以及
    液晶层，设置在所述第一基板及所述第二基板之间，且包括多个液晶分子，所述各液晶分子自所述第一基板方向朝向所述第二基板方向在一垂直方向上排列。
  2. 如权利要求1所述的抗压液晶显示结构，其特征在于，当所述第二基板接受朝向所述第一基板的应力时，所述各柱形支撑件卡合在所述保护层上。
  3. 如权利要求2所述的抗压液晶显示结构，其特征在于，当所述各柱形支撑件卡合在所述保护层上时，所述各第一凸出部及所述各第二凹陷部与所述各第二凸出部及所述各第一凹陷部相接触。
  4. 如权利要求1所述的抗压液晶显示结构，其特征在于，所述第一基板包括配向膜，且所述配向膜包括相对在水平方向的多个倾角，所述液晶层设置在所述多个倾角上。
  5. 如权利要求1所述的抗压液晶显示结构，其特征在于，所述柱形支撑件包括弹性材料或光阻材料。
  6. 如权利要求1所述的抗压液晶显示结构，其特征在于，所述第一基板及所述第二基板包括偏光片、透明材料。
  7. 如权利要求1所述的抗压液晶显示结构，其特征在于，所述薄膜晶体管的顶表面包括凸块。
  8. 如权利要求1所述的抗压液晶显示结构，其特征在于，所述第二基板包括滤光层。
  9. 如权利要求8所述的抗压液晶显示结构，其特征在于，所述滤光层包括红色滤光区、蓝色滤光区及绿色滤光区。
  10. 如权利要求8所述的抗压液晶显示结构，其特征在于，各柱形支撑件设置在所述滤光层上。
  11. 一种抗压液晶显示结构的制造方法，其特征在于，包括：
    设置第一基板；
    形成多个薄膜晶体管，且形成所述各薄膜晶体管包括下列步骤：
    形成栅极电极在所述第一基板上；
    形成栅极绝缘层在所述栅极电极上；
    形成非晶硅层在所述栅极绝缘层上；
    形成奥姆接触层在所述非晶硅层上;
    形成漏极金属层在所述奥姆接触层上;
    形成源极金属层在所述奥姆接触层上;及
    形成保护层在所述漏极金属层及所述源极金属层上，且所述保护层包括至少一个第一凸出部及至少一个第一凹陷部；
    设置第二基板；
    形成多个柱形支撑件在所述第二基板上，且所述各柱形支撑件一端与所述第二基板相连接，另一端包括至少一个第二凸出部及至少一个第二凹陷部；
    将所述各柱形支撑件的另一端设置在所述各薄膜晶体管上的所述保护层上；以及
    设置液晶层在所述第一基板及所述第二基板之间，且所述液晶层包括多个液晶分子，所述各液晶分子自所述第一基板方向朝向所述第二基板方向在一垂直方向上排列。
  12. 如权利要求11所述的抗压液晶显示结构的制造方法，其特征在于，更包括在形成所述各柱形支撑件后，以蚀刻方式形成所述各第二凸出部及所述各第二凹陷部。
  13. 如权利要求11所述的抗压液晶显示结构的制造方法，其特征在于，更包括在所述保护层上以蚀刻方式形成所述各第一凸出部及所述各第一凹陷部。
  14. 如权利要求11所述的抗压液晶显示结构的制造方法，其特征在于，当所述第二基板接受朝向所述第一基板的应力时，所述各柱形支撑件卡合在所述保护层上。
  15. 如权利要求14所述的抗压液晶显示结构的制造方法，其特征在于，当所述各柱形支撑件卡合在所述保护层上时，所述各第一凸出部及所述各第二凹陷部与所述各第二凸出部及所述各第一凹陷部相接触。
  16. 如权利要求11所述的抗压液晶显示结构的制造方法，其特征在于，所述第一基板包括配向膜，且所述配向膜包括相对在水平方向的多个倾角，所述液晶层设置在所述多个倾角上。
  17. 如权利要求11所述的抗压液晶显示结构的制造方法，其特征在于，所述柱形支撑件包括弹性材料或光阻材料。
  18. 如权利要求11所述的抗压液晶显示结构的制造方法，其特征在于，所述第一基板及所述第二基板包括偏光片、透明材料。
  19. 如权利要求11所述的抗压液晶显示结构的制造方法，其特征在于，所述薄膜晶体管的顶表面包括凸块。
  20. 如权利要求11所述的抗压液晶显示结构的制造方法，其特征在于，所述第二基板包括滤光层，所述滤光层包括红色滤光区、蓝色滤光区及绿色滤光区，各柱形支撑件形成在所述滤光层上。
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