WO2021107137A1 - Procédé de fabrication de dispositif à semi-conducteurs et stratifié pour traitement de semi-conducteurs - Google Patents

Procédé de fabrication de dispositif à semi-conducteurs et stratifié pour traitement de semi-conducteurs Download PDF

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Publication number
WO2021107137A1
WO2021107137A1 PCT/JP2020/044352 JP2020044352W WO2021107137A1 WO 2021107137 A1 WO2021107137 A1 WO 2021107137A1 JP 2020044352 W JP2020044352 W JP 2020044352W WO 2021107137 A1 WO2021107137 A1 WO 2021107137A1
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semiconductor processing
adhesive tape
semiconductor
temperature
tape
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PCT/JP2020/044352
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English (en)
Japanese (ja)
Inventor
智範 今
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積水化学工業株式会社
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Priority to JP2021507090A priority Critical patent/JPWO2021107137A1/ja
Priority to CN202080048374.4A priority patent/CN114097073A/zh
Priority to KR1020217043070A priority patent/KR20220106915A/ko
Publication of WO2021107137A1 publication Critical patent/WO2021107137A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/066—Copolymers with monomers not covered by C09J133/06 containing -OH groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device capable of suppressing peeling at an interface between a temporary fixing tape and an adhesive tape for semiconductor processing and satisfactorily picking up a semiconductor package, and a laminate for semiconductor processing.
  • the electronic components When processing electronic components such as semiconductors, in order to facilitate the handling of the electronic components and prevent them from being damaged, the electronic components are fixed to the support plate via an adhesive composition, or the adhesive tape is electronically attached. It is protected by attaching it to parts. For example, when a thick film wafer cut out from a high-purity silicon single crystal or the like is ground to a predetermined thickness to obtain a thin film wafer, the thick film wafer can be adhered to a support plate via an adhesive composition. Will be done.
  • the adhesive tape is attached to the semiconductor package.
  • the semiconductor package to which the adhesive tape is attached is further temporarily fixed on a tape called a dicing tape, and the semiconductor package is diced together with the adhesive tape on the dicing tape.
  • the separated semiconductor package is peeled from the dicing tape and / or the adhesive tape by a needle pickup or the like.
  • Patent Document 1 discloses a pressure-sensitive adhesive sheet in which a polyfunctional monomer or oligomer having a radiopolymerizable functional group is bonded to the side chain or main chain of a polymer. Has been done.
  • the adhesive strength is lowered by irradiating the polymer with ultraviolet rays at the time of peeling, and the polymer can be peeled without adhesive residue.
  • the semiconductor package having the metal film formed on the back surface and the side surface is peeled off from the temporary fixing tape and the adhesive tape by a needle pickup or the like.
  • a needle pickup or the like depending on the height, shape, etc. of the electrodes on the circuit surface (front surface) of the semiconductor package, it may not be possible to satisfactorily pick up the semiconductor package after the shield treatment.
  • the present invention provides a method for manufacturing a semiconductor device capable of suppressing peeling at an interface between a temporary fixing tape and an adhesive tape for semiconductor processing and satisfactorily picking up a semiconductor package, and a laminate for semiconductor processing. The purpose is.
  • the present invention is a method for manufacturing a semiconductor device, wherein a semiconductor package to which an adhesive tape for semiconductor processing is attached is laminated on a temporary fixing tape so that the adhesive tape for semiconductor processing is in contact with the above.
  • a semiconductor processing laminate in which metal films are formed on the back surface and side surfaces of a semiconductor package to which an adhesive tape for semiconductor processing is attached, a semiconductor package having metal films formed on the back surface and side surfaces is formed from the above-mentioned adhesive tape for semiconductor processing.
  • Fa (t) represents the peeling force of the adhesive tape for semiconductor processing with respect to the copper plate at the temperature t
  • Fb (t) represents the peeling force of the temporary fixing tape against the adhesive tape for semiconductor processing at the temperature t
  • the pickup When picking up a semiconductor package after shielding, the pickup is defective because peeling occurs not at the interface between the semiconductor package and the adhesive tape (adhesive tape for semiconductor processing) but at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing. Occurs.
  • the present inventors have described "adhesive strength of adhesive tape for semiconductor processing to an adherend (using a standard copper plate)" and "adhesion of temporary fixing tape to adhesive tape for semiconductor processing”. I focused on "power”. By picking up the semiconductor package in a state where the ratio of these adhesive strengths is heated to a temperature that satisfies a specific range, the present inventors can peel off the temporary fixing tape and the adhesive tape for semiconductor processing at the interface. We have found that it is possible to suppress and pick up a semiconductor package satisfactorily, and have completed the present invention.
  • a step (3) of picking up a semiconductor package having a metal film formed on the back surface and side surfaces from an adhesive tape for semiconductor processing is performed in a specific laminate for semiconductor processing.
  • the specific semiconductor processing laminate is a semiconductor package to which the semiconductor processing adhesive tape is attached, which is laminated on the temporary fixing tape so that the semiconductor processing adhesive tape side is in contact with the semiconductor processing adhesive tape.
  • the method for obtaining such a laminate for semiconductor processing is not particularly limited, but a method for obtaining a laminate for semiconductor processing by performing the following steps (1) and (2) before the above step (3) is possible. preferable.
  • a temporary fixing tape so that the adhesive tape side for semiconductor processing is in contact with the tape (1).
  • the adhesive tape for semiconductor processing may be a support type having a base material and an adhesive layer laminated on at least one surface of the base material, or may have no base material and may have an adhesive layer. It may be a non-support type having. In particular, since it becomes easy to adjust Fb (t) / Fa (t) as described later and the semiconductor package can be picked up better, it is laminated on the base material and one surface of the base material.
  • a single-sided support type having an adhesive layer is preferable. When the adhesive tape for semiconductor processing is a single-sided support type, the base material side of the adhesive tape for semiconductor processing comes into contact with the adhesive surface of the temporary fixing tape.
  • the material of the base material of the adhesive tape for semiconductor processing is not particularly limited, but a heat-resistant material is preferable.
  • the material of the base material of the adhesive tape for semiconductor processing include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultrahigh molecular weight polyethylene, syndiotactic polystyrene, polyarylate, and polysulfone. , Polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer and the like. Of these, polyethylene terephthalate and polyethylene naphthalate are preferable because they have excellent heat resistance.
  • the base material of the pressure-sensitive adhesive tape for semiconductor processing preferably has an easy-adhesion layer on the surface opposite to the pressure-sensitive adhesive layer.
  • the easy-adhesive layer is formed on the surface opposite to the pressure-sensitive adhesive layer, that is, on the back surface of the base material of the pressure-sensitive adhesive tape for semiconductor processing. Since the base material of the adhesive tape for semiconductor processing has the easy-adhesive layer, it becomes easy to adjust Fb (t) / Fa (t) as described later, and the semiconductor package can be picked up better. Can be done.
  • the easy-adhesion layer examples include a SiOx layer, a metal oxide layer, an organometallic compound layer, a silicone compound layer, a polymerizable polymer layer, a corona-treated layer, and a plasma-treated layer.
  • an organometallic compound layer and a corona-treated layer are preferable because they have a higher adhesive effect.
  • Examples of the method for easy adhesion treatment with an organic compound or an inorganic compound include vapor deposition, coating, and the like. Can be mentioned.
  • a method for forming the corona-treated layer for example, a high-frequency power supply device (AGI-020 manufactured by Kasuga Electric Works Ltd.) is used to reciprocate the film once under the conditions of an output of 0.24 Kw, a speed of 40 mm / min, and an electrode distance of 1 mm. , A method of applying a corona treatment to the back surface of the base material and the like.
  • the base material of the adhesive tape for semiconductor processing has a flexural rigidity of 2.38 ⁇ 10 -7 N ⁇ m 2 / m or more and 1.50 ⁇ 10 -4 N ⁇ m 2 per unit width in the TD direction at 23 ° C. It is preferably / m or less.
  • the flexural rigidity per unit width in the TD direction at 23 ° C. is more preferably 4.12 ⁇ 10-7 N ⁇ m 2 / m or more, and 9.76 ⁇ 10-7 N ⁇ m 2 / m or more.
  • the TD (Transverse Direction) direction refers to a direction perpendicular to the extrusion direction when the base material is extruded into a sheet shape.
  • the flexural rigidity per unit width is represented by a value obtained by dividing the product of the tensile elastic modulus E and the moment of inertia of area I by the length of the width of the base material.
  • the tensile elastic modulus E is determined by using, for example, a viscoelastic spectrometer (for example, DVA-200, manufactured by IT Measurement Control Co., Ltd.) under the conditions of a constant speed temperature rise tension mode, a temperature rise rate of 10 ° C./min, and a frequency of 10 Hz. Can be measured with.
  • the storage elastic modulus of the base material of the adhesive tape for semiconductor processing is not particularly limited, but is preferably 5.0 ⁇ 10 7 Pa or more and 1.0 ⁇ 10 11 Pa or less.
  • the base material becomes moderately bendable. Therefore, the semiconductor when dicing the semiconductor package together with the adhesive tape for semiconductor processing. The peeling of the package can be further suppressed, and the semiconductor package can be picked up better.
  • the storage elastic modulus of the base material of the adhesive tape for semiconductor processing is more preferably 8.0 ⁇ 10 8 Pa or more, further preferably 1.0 ⁇ 10 9 Pa or more, and 5.0 ⁇ 10 10 more preferably Pa or less, and more preferably not more than 5.0 ⁇ 10 9 Pa.
  • Examples of the method for measuring the storage elastic modulus of the base material of the adhesive tape for semiconductor processing include methods such as dynamic viscoelasticity measurement and tensile test. More specifically, a strip-shaped test piece having a width of 10 mm is prepared. The obtained test piece was subjected to a tensile test using a tensile tester (for example, RTG1250A, manufactured by AND, etc.) at a temperature of 23 ° C. and a humidity of 50% at a test speed of 300 mm / min, and according to JIS K7161-1. The tensile storage elastic modulus can be obtained.
  • a tensile tester for example, RTG1250A, manufactured by AND, etc.
  • the ultraviolet transmittance of the base material of the adhesive tape for semiconductor processing is not particularly limited, but when the adhesive layer of the adhesive tape for semiconductor processing is a photocurable adhesive layer, the ultraviolet transmittance at 405 nm is 1% or more. It is preferable to have.
  • the ultraviolet transmittance at 405 nm is more preferably 10% or more, further preferably 15% or more, and particularly preferably 50% or more.
  • the pressure-sensitive adhesive layer can be formed without using a photosensitizer when the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing is a photocurable pressure-sensitive adhesive layer. It can be sufficiently cured.
  • the upper limit of the ultraviolet transmittance at 405 nm is not particularly limited, and the higher the upper limit, the better, usually 100% or less.
  • the thickness of the base material of the adhesive tape for semiconductor processing is not particularly limited, but the preferable lower limit is 5 ⁇ m and the preferable upper limit is 200 ⁇ m. When the thickness of the base material of the adhesive tape for semiconductor processing is within the above range, the adhesive tape for semiconductor processing can be obtained with appropriate elasticity and excellent handleability.
  • the more preferable lower limit of the thickness of the base material of the adhesive tape for semiconductor processing is 10 ⁇ m, and the more preferable upper limit is 150 ⁇ m.
  • the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing is not particularly limited, and may be either a non-curable type pressure-sensitive adhesive or a curable type pressure-sensitive adhesive.
  • rubber-based adhesives acrylic-based adhesives, vinyl alkyl ether-based adhesives, silicone-based adhesives, polyester-based adhesives, polyamide-based adhesives, urethane-based adhesives, styrene-diene block copolymerization systems.
  • Adhesives and the like can be mentioned.
  • an acrylic pressure-sensitive adhesive is preferable, and an acrylic-based curable pressure-sensitive adhesive is more preferable because it has excellent heat resistance and the adhesive strength can be easily adjusted.
  • the curable pressure-sensitive adhesive examples include a photo-curable pressure-sensitive adhesive that is crosslinked and cured by light irradiation, a thermosetting pressure-sensitive adhesive that is cross-linked and cured by heating, and the like. Of these, a photocurable adhesive is preferable because it does not easily damage the adherend and can be easily cured. That is, examples of the pressure-sensitive adhesive layer include a photocurable pressure-sensitive adhesive layer and a thermosetting type pressure-sensitive adhesive layer, but a photo-curable pressure-sensitive adhesive layer is preferable. Examples of the photocurable pressure-sensitive adhesive include a pressure-sensitive adhesive containing a polymerizable polymer as a main component and a photopolymerization initiator. Examples of the thermosetting pressure-sensitive adhesive include a pressure-sensitive adhesive containing a polymerizable polymer as a main component and a heat polymerization initiator.
  • a (meth) acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth) acrylic polymer) is synthesized in advance and reacted with the functional group in the molecule. It can be obtained by reacting a compound having a functional group to be subjected to a radically polymerizable unsaturated bond (hereinafter, referred to as a functional group-containing unsaturated compound).
  • the functional group-containing (meth) acrylic polymer further requires, for example, an acrylic acid alkyl ester and / or a methacrylate alkyl ester in which the number of carbon atoms of the alkyl group is usually in the range of 2 to 18, a functional group-containing monomer, and the like. It can be obtained by copolymerizing these with other copolymerizable modifying monomers.
  • the weight average molecular weight of the functional group-containing (meth) acrylic polymer is not particularly limited, but is usually about 200,000 to 2,000,000.
  • the weight average molecular weight can be determined by using gel permeation chromatography. More specifically, for example, the obtained polymer is adjusted to 0.2% by weight with tetrahydrofuran (THF), and the obtained diluent is filtered through a filter (material: polytetrafluoroethylene, pore diameter: 0.2 ⁇ m). To do.
  • the obtained filtrate was supplied to a gel permeation chromatograph (manufactured by Waters, 2690 Separations Model, or an equivalent product thereof), and GPC measurement was performed under the conditions of a sample flow rate of 1 mL / min and a column temperature of 40 ° C. to obtain a polystyrene-equivalent molecular weight. Is measured to determine the weight average molecular weight (Mw).
  • a GPC KF-806L manufactured by Showa Denko KK or an equivalent product thereof
  • a differential refractometer is used as the detector.
  • the functional group-containing monomer examples include a carboxyl group-containing monomer such as acrylate and methacrylic acid, a hydroxyl group-containing monomer such as hydroxyethyl acrylate and hydroxyethyl methacrylate, and an epoxy such as glycidyl acrylate and glycidyl methacrylate.
  • Group-containing monomers can be mentioned.
  • the functional group-containing monomer include isocyanate group-containing monomers such as ethyl isocyanate and ethyl methacrylate, and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.
  • Examples of the other copolymerizable monomer for modification include various monomers used in general (meth) acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.
  • the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer is the same as the functional group-containing monomer described above, depending on the functional group of the functional group-containing (meth) acrylic polymer. Can be used.
  • the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group
  • an epoxy group-containing monomer or an isocyanate group-containing monomer is used.
  • the functional group of the functional group-containing (meth) acrylic polymer is a hydroxyl group
  • an isocyanate group-containing monomer is used.
  • the functional group of the functional group-containing (meth) acrylic polymer is an epoxy group
  • a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used.
  • the functional group of the functional group-containing (meth) acrylic polymer is an amino group
  • an epoxy group-containing monomer is used.
  • the raw material monomer may be subjected to a radical reaction in the presence of a polymerization initiator.
  • a method of radically reacting the raw material monomer that is, a polymerization method
  • examples thereof include solution polymerization (boiling point polymerization or constant temperature polymerization), emulsion polymerization, suspension polymerization, and bulk polymerization.
  • the polymerization initiator used in the radical reaction for obtaining the functional group-containing (meth) acrylic polymer is not particularly limited, and examples thereof include organic peroxides and azo compounds.
  • organic peroxide examples include 1,1-bis (t-hexyl peroxy) -3,3,5-trimethylcyclohexane, t-hexyl peroxypivalate, t-butylperoxypivalate, 2,5. -Dimethyl-2,5-bis (2-ethylhexanoylperoxy) hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxy Examples thereof include isobutyrate, t-butylperoxy-3,5,5-trimethylhexanoate and t-butylperoxylaurate.
  • the azo compound examples include azobisisobutyronitrile and azobiscyclohexanecarbonitrile. These polymerization initiators may be used alone or in combination of two or more.
  • the photocurable pressure-sensitive adhesive layer preferably contains a photopolymerization initiator.
  • the photopolymerization initiator include those that are activated by irradiating light having a wavelength of 250 to 800 nm.
  • Examples of such a photopolymerization initiator include acetphenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyl dimethyl ketal and acetophenone diethyl ketal, and the like.
  • Examples include phosphine oxide derivative compounds.
  • bis ( ⁇ 5-cyclopentadienyl) titanosen derivative compound benzophenone, Michler ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, ⁇ -hydroxycyclohexylphenylketone, 2-hydroxymethylphenylpropane and the like can also be mentioned.
  • photopolymerization initiators may be used alone or in combination of two or more.
  • the thermosetting pressure-sensitive adhesive layer preferably contains a thermal polymerization initiator.
  • the thermal polymerization initiator include those that generate active radicals that are decomposed by heat to initiate polymerization curing. Specifically, for example, dicumyl peroxide, di-t-butyl peroxide, t-butylperoxybenzoale, t-butylhydroperoxide, benzoyl peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, etc. Examples thereof include paramentan hydroperoxide and di-t-butyl peroxide.
  • thermal polymerization initiator examples thereof include perbutyl D, perbutyl H, perbutyl P, and perpenta H (all of which are manufactured by NOF CORPORATION). These thermal polymerization initiators may be used alone or in combination of two or more.
  • the pressure-sensitive adhesive layer may further contain a radically polymerizable polyfunctional oligomer or monomer.
  • a radically polymerizable polyfunctional oligomer or monomer By containing a radically polymerizable polyfunctional oligomer or monomer, the photocurability and thermosetting property of the pressure-sensitive adhesive layer are improved.
  • the polyfunctional oligomer or monomer is not particularly limited, but the weight average molecular weight is preferably 10,000 or less. Since the three-dimensional network of the pressure-sensitive adhesive layer is efficiently formed by light irradiation or heating, the polyfunctional oligomer or monomer has a weight average molecular weight of 5000 or less and the number of radically polymerizable unsaturated bonds in the molecule. Is preferably 2 to 20.
  • polyfunctional oligomer or monomer examples include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and the like. Examples thereof include methacrylate.
  • examples of the polyfunctional oligomer or monomer examples include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and methacrylates thereof. Be done. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.
  • the pressure-sensitive adhesive layer may further contain an inorganic filler such as fumed silica.
  • an inorganic filler such as fumed silica.
  • the pressure-sensitive adhesive layer preferably contains a cross-linking agent.
  • a cross-linking agent By containing the cross-linking agent, the cohesive force of the pressure-sensitive adhesive layer is increased, and the peelability of the pressure-sensitive adhesive tape for semiconductor processing is improved, so that the semiconductor package can be picked up better.
  • the above-mentioned cross-linking agent is not particularly limited, and examples thereof include isocyanate-based cross-linking agents, epoxy-based cross-linking agents, aziridine-based cross-linking agents, and metal chelate-based cross-linking agents. Of these, isocyanate-based cross-linking agents are preferable because they have higher adhesive strength.
  • the content of the cross-linking agent is preferably 0.1 part by weight or more and 20 parts by weight or less with respect to 100 parts by weight of the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer.
  • the pressure-sensitive adhesive can be appropriately cross-linked to increase the adhesive strength.
  • the more preferable lower limit of the content of the cross-linking agent is 0.5 parts by weight
  • the more preferable upper limit is 15 parts by weight
  • the further preferable lower limit is 1.0 part by weight
  • the further preferable upper limit is 10. It is a part by weight.
  • the pressure-sensitive adhesive layer may contain known additives such as plasticizers, resins, surfactants, waxes, and fine particle fillers. These additives may be used alone or in combination of two or more.
  • the pressure-sensitive adhesive layer preferably has a storage elastic modulus at 23 ° C. of 8.5 ⁇ 10 5 Pa or more and 1.7 ⁇ 10 9 Pa or less.
  • the storage elastic modulus of the pressure-sensitive adhesive layer at 23 ° C. is within the above range, the pressure-sensitive adhesive layer can be attached to the adherend with sufficient adhesive strength, and the adherend can be sufficiently fixed. Further, since the peelability of the adhesive tape for semiconductor processing is improved, the semiconductor package can be picked up better.
  • the storage elastic modulus of the pressure-sensitive adhesive layer at 23 ° C. is more preferably 1.7 ⁇ 10 6 Pa or more, and more preferably 8.5 ⁇ 10 6 Pa or more.
  • the pressure-sensitive adhesive is a curable pressure-sensitive adhesive
  • the storage elastic modulus of the pressure-sensitive adhesive layer refers to that after curing.
  • the state after heating at 120 ° C. for 1 hour and then at 175 ° C. for 1 hour is defined as after curing, and in the case of a photocurable adhesive, an ultrahigh pressure mercury ultraviolet irradiation device is used.
  • the state after irradiating the pressure-sensitive adhesive layer with ultraviolet rays of 405 nm from the base material side so that the integrated intensity becomes 2500 mJ / cm 2 is defined as after curing.
  • Examples of the method for measuring the storage elastic modulus of the pressure-sensitive adhesive layer at 23 ° C. include a method such as dynamic viscoelasticity measurement. More specifically, it is measured using a viscoelastic spectrometer (for example, DVA-200, manufactured by IT Measurement Control Co., Ltd.) under the conditions of a constant speed temperature rise tension mode, a temperature rise rate of 10 ° C./min, and a frequency of 10 Hz. can do.
  • the thickness of the pressure-sensitive adhesive layer is not particularly limited, but a preferable lower limit is 5 ⁇ m and a preferable upper limit is 500 ⁇ m.
  • a preferable lower limit is 5 ⁇ m and a preferable upper limit is 500 ⁇ m.
  • the thickness of the pressure-sensitive adhesive layer is within the above range, it can be attached to the adherend with sufficient adhesive strength, and the adherend can be sufficiently fixed.
  • the more preferable lower limit of the thickness of the pressure-sensitive adhesive layer is 10 ⁇ m
  • the more preferable upper limit is 300 ⁇ m
  • the further preferable lower limit is 15 ⁇ m
  • the further preferable upper limit is 250 ⁇ m
  • the further preferable upper limit is 200 ⁇ m. Is.
  • the method for obtaining the semiconductor package to which the adhesive tape for semiconductor processing is attached is not particularly limited, but the semiconductor is obtained by performing the following steps (1-1) and (1-2) before the step (1).
  • a method of obtaining a semiconductor package to which a processing adhesive tape is attached is preferable. That is, before the step (1), the step (1-1) of attaching the adhesive tape for semiconductor processing to the circuit surface of the semiconductor package and the semiconductor package to which the adhesive tape for semiconductor processing is attached are diced and individually. It is preferable to carry out the step (1-2) of obtaining a semiconductor package to which the separated adhesive tape for semiconductor processing is attached.
  • the method of attaching the adhesive tape for semiconductor processing is not particularly limited, and examples thereof include a method using a laminator.
  • the pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing is a photocurable pressure-sensitive adhesive layer
  • the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing is irradiated with light after the step (1-1). It is preferable to carry out the step (1-3).
  • the base material side so as to have an integrated intensity of 405 nm ultraviolet rays of 2500 mJ / cm 2.
  • the irradiation intensity at this time is not particularly limited, but is preferably 50 to 100 mW / cm 2.
  • the dicing method is not particularly limited.
  • the semiconductor package to which the adhesive tape for semiconductor processing is attached is temporarily fixed on the dicing tape, the dicing tape is attached to the dicing frame, and the dicing device is used for individualization. After that, a method of peeling off the dicing tape can be mentioned.
  • the dicing apparatus is not particularly limited, and for example, DFD6361 manufactured by DISCO can be used.
  • the semiconductor package to which the adhesive tape for semiconductor processing thus obtained is attached is temporarily fixed on the temporary fixing tape so that the adhesive tape for semiconductor processing is in contact with the adhesive tape.
  • the temporary fixing tape is not particularly limited, and a method for manufacturing a semiconductor device, particularly an adhesive tape for temporary fixing that is usually used during dicing or shielding treatment can be used.
  • the temporary fixing tape has a preferable lower limit of 1.0 N / inch and a preferable upper limit of 35 N / inch in adhesive force to a copper plate (a copper plate satisfying JIS H3100: 2018, for example, C1100P, manufactured by Engineering Test Service Co., Ltd.).
  • a copper plate a copper plate satisfying JIS H3100: 2018, for example, C1100P, manufactured by Engineering Test Service Co., Ltd.
  • the adhesive force of the temporary fixing tape to the copper plate is within the above range, it becomes easy to adjust Fb (t) / Fa (t) as described later, and the semiconductor package can be picked up better. it can.
  • the adhesive force to the copper plate is at least the above lower limit, peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing can be further suppressed.
  • the adhesive force to the copper plate is not more than the upper limit, the handleability of the temporary fixing tape is improved.
  • the more preferable lower limit of the adhesive force of the temporary fixing tape to the copper plate is 4 N / inch, and the more preferable upper limit is 15 N / inch.
  • Examples of the method for measuring the adhesive force of the temporary fixing tape to the copper plate include the following methods. First, the temporary fixing tape is placed on the copper plate so that the adhesive layer faces the copper plate (a copper plate satisfying JIS H3100: 2018, for example, C1100P, manufactured by Engineering Test Service Co., Ltd.). The temporary fixing tape and the copper plate are bonded together by reciprocating a 2 kg rubber roller once at a speed of 300 mm / min. Then, it is allowed to stand at 23 degreeC for 1 hour to prepare a test sample.
  • the above provisional test sample was used in the 180 ° direction at a tensile speed of 300 mm / min in an environment of a temperature of 23 ° C. and a relative humidity of 50% using an autograph (manufactured by Shimadzu Corporation) according to JIS Z0237. Peel off the fixing tape and measure the peeling force.
  • the temporary fixing tape preferably has a base material and an adhesive layer laminated on one surface of the base material.
  • the pressure-sensitive adhesive layer of the temporary fixing tape is not particularly limited, but is preferably a silicone pressure-sensitive adhesive layer. By having the silicone pressure-sensitive adhesive layer, the heat resistance of the temporary fixing tape is improved.
  • the silicone compound constituting the silicone pressure-sensitive adhesive layer is not particularly limited, and examples thereof include polysiloxane, addition-curable silicone, and peroxide-curable silicone.
  • the thickness of the pressure-sensitive adhesive layer of the temporary fixing tape is not particularly limited, but the preferable lower limit is 5 ⁇ m and the preferable upper limit is 500 ⁇ m.
  • the thickness of the pressure-sensitive adhesive layer of the temporary fixing tape is within the above range, it can be attached to the adherend with sufficient adhesive force, and the adherend can be sufficiently fixed.
  • the more preferable lower limit of the thickness of the pressure-sensitive adhesive layer of the temporary fixing tape is 10 ⁇ m
  • the more preferable upper limit is 300 ⁇ m
  • the further preferable lower limit is 15 ⁇ m
  • the further preferable upper limit is 250 ⁇ m
  • the preferred upper limit is 200 ⁇ m.
  • the material of the base material of the temporary fixing tape is not particularly limited, but a heat-resistant material is preferable.
  • the material of the base material of the temporary fixing tape include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultrahigh molecular weight polyethylene, syndiotactic polystyrene, polyallylate, polysulfone, and poly.
  • Examples thereof include ether sulfone, polyphenylene sulfide, polyether ether ketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer and the like. Of these, polyimide, polyethylene terephthalate, and polyethylene naphthalate are preferable because of their excellent heat resistance.
  • the thickness of the base material of the temporary fixing tape is not particularly limited, but the preferable lower limit is 5 ⁇ m and the preferable upper limit is 200 ⁇ m. When the thickness of the base material of the temporary fixing tape is within the above range, it is possible to obtain a temporary fixing tape having an appropriate elasticity and excellent handleability.
  • the more preferable lower limit of the thickness of the base material of the temporary fixing tape is 10 ⁇ m, and the more preferable upper limit is 150 ⁇ m.
  • the commercially available product of the temporary fixing tape is not particularly limited, and examples thereof include Kapton (registered trademark) adhesive tape 650R # 50 (manufactured by Terraoka Co., Ltd.).
  • the method for forming the metal film is not particularly limited, and examples thereof include a method for forming a film made of stainless steel, titanium, aluminum, or the like by sputtering or the like.
  • the semiconductor package to which the semiconductor processing adhesive tape is attached is laminated on the temporary fixing tape so that the semiconductor processing adhesive tape side is in contact with each other. Moreover, it is possible to obtain a semiconductor processing laminate in which metal films are formed on the back surface and the side surface of the semiconductor package to which the semiconductor processing adhesive tape is attached.
  • a step (3) of picking up a semiconductor package having a metal film formed on the back surface and the side surface from the adhesive tape for semiconductor processing is performed. This makes it possible to obtain a semiconductor package in which a metal film is formed on the back surface and the side surface.
  • the semiconductor package having the metal film formed on the back surface and the side surface is picked up in a state of being heated to the temperature T 1 satisfying the following formula (1).
  • Fa (t) represents the peeling force of the adhesive tape for semiconductor processing with respect to the copper plate at the temperature t
  • Fb (t) represents the peeling force of the temporary fixing tape against the adhesive tape for semiconductor processing at the temperature t
  • Fb (t) represents the peeling force of the temporarily fixed tape at the temperature t with respect to the back surface of the adhesive tape for semiconductor processing.
  • the Fa (t) is an index representing "adhesive force of the adhesive tape for semiconductor processing to an adherend (used as a standard copper plate) at a temperature t".
  • the Fb (t) is "adhesive force of the temporary fixing tape to the semiconductor processing adhesive tape at temperature t" (when the semiconductor processing adhesive tape is a single-sided support type, the temporary fixing tape adhesive tape for semiconductor processing at temperature t). It is an index showing the adhesive force to the back surface of the base material. All of these adhesive strengths are reduced by heating, but the degree of the reduction is different, and the Fa (t) tends to be significantly reduced by heating as compared with the Fb (t). That is, the Fb (t) / Fa (t) tends to increase as t increases.
  • the standard copper plate means a copper plate satisfying JIS H3100: 2018 (for example, C1100P, manufactured by Engineering Test Service Co., Ltd.).
  • the semiconductor package may be picked up in a state where the Fb (t) / Fa (t) is heated to a temperature that satisfies the above range (that is, exceeds 100). It is preferable to pick up the semiconductor package in a state of being heated to a temperature such that (t) / Fa (t) is 103 or more. Further, it is more preferable to pick up the semiconductor package in a state where the Fb (t) / Fa (t) is heated to a temperature of 150 or more. Further, it is more preferable to pick up the semiconductor package in a state where the Fb (t) / Fa (t) is heated to a temperature of 200 or more.
  • the upper limit of Fb (t) / Fa (t) is not particularly limited, but a substantial upper limit is, for example, 1500, and a more preferable upper limit is 750.
  • the value (Fa (T 1 )) of the Fa (t) at the temperature T 1 is not particularly limited, but the preferable lower limit is 0.001 N / inch and the preferable upper limit is 0.5 N / inch.
  • the pickup of the semiconductor package can be performed better.
  • the more preferable lower limit of Fa (T 1 ) is 0.005 N / inch, the more preferable lower limit is 0.01 N / inch, the more preferable upper limit is 0.1 N / inch, and the further preferable upper limit is 0.07 N / inch.
  • the value (Fb (T 1 )) of the Fb (t) at the temperature T 1 is not particularly limited, but a preferable lower limit is 1 N / inch, a more preferable lower limit is 5 N / inch, a further preferable lower limit is 10 N / inch, and even more preferable.
  • the lower limit is 15 N / inch.
  • the upper limit of the value (Fb (T 1 )) of the Fb (t) at the temperature T 1 is not particularly limited, but the actual upper limit is, for example, 50 N / inch, and the more preferable upper limit is 20 N / inch.
  • the value of Fa (t) at 23 ° C. is not particularly limited, but a preferable lower limit is 0.04 N / inch and a preferable upper limit is 1.5 N / inch.
  • a preferable lower limit is 0.04 N / inch and a preferable upper limit is 1.5 N / inch.
  • the more preferable lower limit of Fa (23 ° C.) is 0.1 N / inch, and the more preferable upper limit is 1 N / inch.
  • Fb (t) at 23 ° C. is not particularly limited, but a preferable lower limit is 3 N / inch and a preferable upper limit is 30 N / inch.
  • a preferable lower limit is 3 N / inch
  • a preferable upper limit is 30 N / inch.
  • the more preferable lower limit of Fb (23 ° C.) is 5 N / inch
  • the more preferable upper limit is 7 N / inch.
  • the specific value of the temperature T 1 is not particularly limited, but considering the normal temperature when picking up the semiconductor package, the preferable lower limit is 25 ° C, the preferable upper limit is 200 ° C, and the more preferable lower limit is 50 ° C. A more preferable upper limit is 150 ° C.
  • the method of picking up the semiconductor package while being heated to the temperature T 1 is not particularly limited. For example, a method of picking up the semiconductor package while heating to the temperature T 1 by applying warm air using a die bonder device, the temperature T 1 Examples thereof include a method of picking up the product while keeping the temperature at T 1 after heating.
  • Examples of the method for measuring Fa (t) include the following methods. First, the adhesive tape for semiconductor processing is placed on the copper plate so that the adhesive layer faces a copper plate (for example, C1100P, manufactured by Engineering Test Service Co., Ltd.) satisfying JIS H3100: 2018. The above-mentioned adhesive tape for semiconductor processing and a copper plate are bonded together by reciprocating a 2 kg rubber roller once at a speed of 600 mm / min. The laminate is heated while measuring the temperature of the back surface (base material side) of the adhesive tape for semiconductor processing with a temperature measurement sensor (for example, A-231K-011-1-TC1-ANP manufactured by Anritsu Keiki Co., Ltd.). To do.
  • a temperature measurement sensor for example, A-231K-011-1-TC1-ANP manufactured by Anritsu Keiki Co., Ltd.
  • the adhesive tape for semiconductor processing of the laminate heated to temperature t is peeled off in the 180 ° direction at a tensile speed of 300 mm / min in an environment of temperature t and humidity of 50%. , Measure the peeling force.
  • the copper plate as the adherend of the adhesive tape for semiconductor processing means a copper plate satisfying JIS H3100: 2018 (for example, C1100P, manufactured by Engineering Test Service Co., Ltd.), and is selected assuming the circuit surface of the semiconductor package. It is a thing.
  • Examples of the method for measuring Fb (t) include the following methods. First, the adhesive layer of the adhesive tape for semiconductor processing and the copper plate (C1100P) are opposed to each other, and are bonded using a double-sided tape (double-sided tape 560 manufactured by Sekisui Chemical Co., Ltd. or its equivalent). The temporary fixing tape is placed on the semiconductor processing adhesive tape so that the adhesive layer faces the back surface of the base material of the semiconductor processing adhesive tape. The temporary fixing tape and the adhesive tape for semiconductor processing are bonded together by reciprocating a 2 kg rubber roller once at a speed of 300 mm / min.
  • the laminate is heated while measuring the temperature of the back surface (base material side) of the temporary fixing tape with a temperature measuring sensor (for example, A-231K-011-1-TC1-ANP manufactured by Anritsu Keiki Co., Ltd.).
  • a temperature measuring sensor for example, A-231K-011-1-TC1-ANP manufactured by Anritsu Keiki Co., Ltd.
  • the temporary fixing tape of the laminate heated to a temperature t was peeled off in the 180 ° direction at a tensile speed of 300 mm / min in an environment of a temperature t and a relative humidity of 50%. Measure the peeling force. From the obtained Fa (t) and Fb (t), the Fb (t) / Fa (t) can be calculated.
  • the Fa (t) is heated to a temperature t after the semiconductor processing pressure-sensitive adhesive tape is attached to a copper plate.
  • the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing is irradiated with light to cure the pressure-sensitive adhesive layer, and then the measurement is performed.
  • the base material side so as to have an integrated intensity of 405 nm ultraviolet rays of 2500 mJ / cm 2.
  • a method of irradiating the pressure-sensitive adhesive layer with The irradiation intensity at this time is not particularly limited, but is preferably 50 to 100 mW / cm 2.
  • the specific values of the Fa (t) and the Fb (t) may be adjusted.
  • a method for adjusting the Fa (t) in addition to the method for adjusting the temperature t, for example, a method for adjusting the type, composition, physical properties, etc. of the adhesive layer of the adhesive tape for semiconductor processing as described above. Can be mentioned.
  • a method for adjusting the Fb (t) within the above range in addition to the method for adjusting the temperature t, for example, the type, composition, physical properties, etc. of the base material of the adhesive tape for semiconductor processing are adjusted as described above.
  • Examples thereof include a method of forming an easy-adhesive layer as described above on the surface opposite to the pressure-sensitive adhesive layer of the base material of the pressure-sensitive adhesive tape for semiconductor processing, that is, on the back surface. Further, a method of adjusting the type, composition, physical properties and the like of the pressure-sensitive adhesive layer of the temporary fixing tape can also be mentioned.
  • FIG. 1 shows a diagram schematically showing an example of a method for manufacturing a semiconductor device of the present invention.
  • the method for manufacturing the semiconductor device of the present invention will be described with reference to FIG.
  • the adhesive tape 2 for semiconductor processing in FIG. 1 is a single-sided support type having a base material 2b and an adhesive layer 2a laminated on one surface of the base material 2b, the manufacturing of the semiconductor device of the present invention.
  • the adhesive tape 2 for semiconductor processing may be a non-support type having no base material 2b.
  • the step (1-1) of attaching the semiconductor processing adhesive tape 2 to the circuit surface of the semiconductor package 4 may be performed.
  • the pressure-sensitive adhesive layer of the semiconductor processing adhesive tape is a photocurable pressure-sensitive adhesive layer
  • the pressure-sensitive adhesive layer of the semiconductor processing pressure-sensitive adhesive tape is irradiated with light after the step (1-1). It is preferable to carry out step (1-3) (not shown).
  • the semiconductor package 4 to which the semiconductor processing adhesive tape 2 is attached is diced and the semiconductor processing adhesive tape 2 is separated into individual pieces.
  • the step (1-2) of obtaining the semiconductor package 4 to which is affixed may be performed.
  • the semiconductor package 4 to which the semiconductor processing adhesive tape 2 is attached is temporarily fixed so that the semiconductor processing adhesive tape 2 side is in contact with the semiconductor package 4.
  • the step (1) of temporarily fixing on the tape 3 may be performed.
  • a metal film 5 is formed on the back surface and the side surface of the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached on the temporary fixing tape 3. (2) may be performed.
  • the semiconductor package 4 to which the semiconductor processing adhesive tape 2 is attached is placed on the temporary fixing tape 3 so that the semiconductor processing adhesive tape 2 side is in contact with the semiconductor package 4. It is possible to obtain a semiconductor processing laminate in which the metal film 5 is formed on the back surface and the side surface of the semiconductor package 4 to which the semiconductor processing adhesive tape 2 is attached.
  • the semiconductor package 4 in which the metal film 5 is formed on the back surface and the side surface is provided with an adhesive tape for semiconductor processing. The step (3) of picking up from 2 is performed.
  • the semiconductor package having the metal film formed on the back surface and the side surface is picked up in a state of being heated to the temperature T 1 satisfying the following formula (1).
  • Fa (t) represents the peeling force of the adhesive tape for semiconductor processing with respect to the copper plate at the temperature t
  • Fb (t) represents the peeling force of the temporary fixing tape against the adhesive tape for semiconductor processing at the temperature t
  • a laminate for semiconductor processing which is an intermediate product of the method for manufacturing a semiconductor device of the present invention, is also one of the present inventions.
  • the semiconductor processing laminate of the present invention is a semiconductor processing laminate in which a semiconductor package to which a semiconductor processing adhesive tape is attached is laminated on a temporary fixing tape so that the semiconductor processing adhesive tape side is in contact with the semiconductor package.
  • This is a semiconductor processing laminate having a temperature T 2 satisfying the following formula (1') in a temperature range of 25 to 200 ° C. 100 ⁇ ⁇ Fb (T 2 ) / Fa (T 2 ) ⁇ (1')
  • Fa (t) represents the peeling force of the adhesive tape for semiconductor processing with respect to the copper plate at the temperature t
  • Fb (t) represent the peeling force of the temporary fixing tape against the adhesive tape for semiconductor processing at the temperature t
  • the lower limit of the specific value of the temperature T 2 is 25 ° C, and the upper limit is 200 ° C.
  • the specific value of the temperature T 2 is preferably 50 ° C. and a preferable upper limit is 150 ° C. in consideration of the normal temperature when picking up the semiconductor package.
  • metal films may be formed on the back surface and the side surface of the semiconductor package to which the adhesive tape for semiconductor processing is attached.
  • a method for manufacturing a semiconductor device capable of suppressing peeling at an interface between a temporary fixing tape and an adhesive tape for semiconductor processing and satisfactorily picking up a semiconductor package, and a laminate for semiconductor processing can be obtained. Can be provided.
  • (A) to (e) are diagrams schematically showing an example of a method for manufacturing a semiconductor device of the present invention.
  • (A1) to (a4) are diagrams schematically showing each step of the method for manufacturing a semiconductor device in Examples and Reference Examples.
  • Example 1 A reactor equipped with a synthetic thermometer for an adhesive polymer, a stirrer, and a cooling tube was prepared.
  • this reactor 93 parts by weight of 2-ethylhexyl acrylate as a (meth) acrylic acid alkyl ester, 1 part by weight of acrylic acid as a functional group-containing monomer, 6 parts by weight of hydroxyethyl methacrylate, 0.01 part by weight of lauryl mercaptan, and the like. After adding 80 parts by weight of ethyl acetate, the reactor was heated to initiate reflux.
  • an ethyl acetate solution of a functional group-containing (meth) acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained.
  • a functional group-containing (meth) acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained.
  • 2-isocyanatoethyl methacrylate was added and reacted to obtain an adhesive polymer. It was.
  • Silicone compound (EBECRYL350, manufactured by Daicel Cytec)
  • Inorganic filler siliconca filler, Leoloseal MT-10, manufactured by Tokuyama Corporation
  • Urethane acrylate (UN-5500, manufactured by Negami Kogyo Co., Ltd.)
  • Cross-linking agent isocyanate-based cross-linking agent, Coronate L, manufactured by Nippon Urethane Industry Co., Ltd.
  • Photopolymerization initiator (Irgacure 369, manufactured by BASF)
  • a viscoelastic spectrometer (DVA-200, manufactured by IT Measurement Control Co., Ltd.) was used to set a constant rate of temperature rise and tension mode, and a temperature rise rate of 10 ° C./ The measurement was carried out under the condition of a frequency of 10 Hz.
  • the storage elastic modulus at 23 ° C. at this time is described as the storage elastic modulus of the pressure-sensitive adhesive layer.
  • the illuminance was adjusted so that the irradiation intensity was 100 mW / cm 2.
  • the laminate was heat-treated using an oven heated to the temperature T 1 shown in Table 1.
  • Temperature measuring sensors the temperature of the back surface of the semiconductor processing adhesive tape (substrate side) (Anritsu Meter Co., A-231K-01-1-TC1 -ANP) while measuring, the heated laminate to temperatures T 1 did.
  • peeling pressure-sensitive adhesive tape for semiconductor processing of the laminate the temperature 23 ° C. or a temperature T 1, in the 180 ° direction at a tensile rate of 300mm / min, under humidity of 50%,
  • the peeling force Fa (23 ° C.) and Fa (T 1 ) were measured.
  • the obtained pressure-sensitive adhesive layer and the corona-treated surface of the base material A having corona-treated one side were bonded to each other and cured at 40 ° C. for 6 days to obtain a temporary fixing tape.
  • the adhesive strength of the temporary fixing tape to the copper plate (copper plate satisfying JIS H3100: 2018, C1100P, manufactured by Engineering Test Service Co., Ltd.) was measured and found to be 6.5 N / inch.
  • the laminate was heat-treated using an oven heated to the temperature T 1 shown in Table 1. While measuring the temperature of the back surface of the temporary fixing tape (the base material side of the temporary fixing tape) with a temperature measurement sensor (A-231K-011-1-TC1-ANP manufactured by Anritsu Keiki Co., Ltd.), the temperature of the laminate was T 1. Heated to. Using an autograph (manufactured by Shimadzu Corporation), peeling the temporary fixing tape laminate, the temperature 23 ° C. or a temperature T 1, in the 180 ° direction at a tensile rate of 300mm / min, under humidity of 50%, peel strength Fb (23 ° C.) and Fb (T 1 ) were measured.
  • a temperature measurement sensor A-231K-011-1-TC1-ANP manufactured by Anritsu Keiki Co., Ltd.
  • PU force and bonding the back of the adhesive tape for semiconductor processing with respect PU force measurement dicing tape at a temperature T 1, and diced into 10 mm ⁇ 10 mm on the pressure-sensitive adhesive layer side substrate was affixed with a roller.
  • a desktop tensile compression tester (MCT-2150, manufactured by A & D) was used to pick up the adhesive tape for semiconductor processing by forming an individualized substrate from the back side (base material side). The force required to peel off the individualized substrate was measured and used as a PU (pick up) force.
  • the individualized substrate was attached to the adhesive tape for semiconductor processing, and then the laminate was heat-treated using an oven heated to the temperature T 1.
  • the laminate is heated to a temperature T 1 of In the same state, the pickup was performed in the same manner, and the PU force at the temperature T 1 was measured.
  • FIGS. 2 (a1) to (a4) were performed as shown below.
  • An adhesive tape 2 for semiconductor processing was attached to a surface of a copper-clad laminated substrate 7 (CCL-EL190T / GEPL-190T manufactured by Mitsubishi Gas Chemical Company, Inc.) having a copper foil 7a (FIG. 2 (a1)).
  • the pressure-sensitive adhesive layer 2a was cured by irradiating the pressure-sensitive adhesive layer 2a with ultraviolet rays of 405 nm from the base material 2b side for 25 seconds using an ultra-high pressure mercury ultraviolet irradiation device. The illuminance was adjusted so that the irradiation intensity was 100 mW / cm 2.
  • the copper-clad laminated substrate 7 to which the adhesive tape 2 for semiconductor processing is attached is temporarily fixed on the dicing tape 8 (Elegrip UPH-1510M4 manufactured by Denka Co., Ltd.) so that the copper-clad laminate 7 side is in contact with the dicing frame 9. (Fig. 2 (a2)).
  • the copper-clad laminated substrate 7 to which the adhesive tape 2 for semiconductor processing was attached was individualized (chips) into 10 mm squares using a dicing device (DFD6361 manufactured by DISCO) (FIG. 2 (a3)).
  • the dicing tape 8 was cured by irradiating the dicing tape 8 with an ultraviolet ray of 405 nm so as to have an integrated intensity of 2500 mJ / cm 2 using an ultrahigh pressure mercury ultraviolet ray irradiator. The illuminance was adjusted so that the irradiation intensity was 50 mW / cm 2. Then, the dicing tape 8 was peeled off. The copper-clad laminated substrate 7 to which the individualized adhesive tape 2 for semiconductor processing was attached was temporarily fixed on the temporary fixing tape 3 so that the adhesive tape 2 for semiconductor processing was in contact with the adhesive tape 2, and was reattached to the dicing frame 9. (Fig. 2 (a4)).
  • the copper-clad laminated substrate 7 to which the individualized adhesive tape 2 for semiconductor processing was attached was heat-treated together with the dicing frame 9 for 1 hour. It should be noted that "heating at 150 ° C. for 1 hour" is set assuming the temperature and time required when the semiconductor package is shielded. After a lapse of a predetermined time, the copper-clad laminated substrate 7 to which the individualized adhesive tape 2 for semiconductor processing was attached was taken out together with the dicing frame 9 and sufficiently allowed to cool in an environment of a temperature of 23 ° C. and a relative humidity of 50%. Using a die bonder device (Canon Machinery Co., Ltd., BestD02), the copper-clad laminated substrate 7 is separated while being heated to the temperature T 1 shown in Table 1 by heating to the temperature T 1 by applying warm air. Was picked up.
  • Examples 2 to 8, reference examples 1 to 5 An adhesive tape for semiconductor processing and a temporary fixing tape were obtained in the same manner as in Example 1 except that the composition of the pressure-sensitive adhesive layer and the base material were changed as shown in Table 1. Each physical property was measured and a semiconductor device was manufactured in the same manner as in Example 1.
  • pick-up evaluation (1-1) semiconductor package - a case Pick Stay up-force at the interface separation temperature T 1 of between the adhesive tape is less than 1N A, above 1N, the case was less than 5N B, more 5N When it was less than 10N, it was judged as C, and when it was 10N or more (the individualized substrate was not peeled off), it was judged as D.
  • a method for manufacturing a semiconductor device capable of suppressing peeling at an interface between a temporary fixing tape and an adhesive tape for semiconductor processing and satisfactorily picking up a semiconductor package, and a laminate for semiconductor processing can be obtained. Can be provided.
  • Adhesive tape for semiconductor processing 2a Adhesive layer 2b Base material 3 Temporary fixing tape 4 Semiconductor package 5 Metal film 6 Pickup needle 7 Copper-clad laminated substrate 7a Copper foil 8 Dicing tape 9 Dicing frame

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Abstract

L'objectif de la présente invention est de fournir un procédé de fabrication pour un dispositif à semi-conducteur et un stratifié pour le traitement de semi-conducteurs par lequel le pelage est supprimé au niveau d'une interface entre une bande de fixation temporaire et un ruban adhésif pour le traitement de semi-conducteurs, et par lequel il est possible de prélever favorablement un boîtier de semi-conducteur. La présente invention concerne un procédé de fabrication d'un dispositif à semi-conducteur, le procédé comprenant une étape (3) dans laquelle, dans un stratifié pour le traitement de semi-conducteur obtenu par stratification d'un boîtier de semi-conducteur sur lequel un ruban adhésif de traitement de semi-conducteur est collé sur une bande de fixation temporaire de telle sorte que le côté de ruban adhésif de traitement de semi-conducteur est en contact, et la formation d'un film métallique sur la surface arrière et les surfaces latérales du boîtier de semi-conducteur sur lequel le ruban adhésif de traitement de semi-conducteur est collé, le boîtier de semi-conducteur dans lequel le film métallique est formé sur la surface arrière et les surfaces latérales est prélevé à partir du ruban adhésif de traitement de semi-conducteur ; et dans l'étape (3), le boîtier de semi-conducteur dans lequel le film métallique est formé sur la surface arrière et les surfaces latérales est prélevé lorsqu'il est chauffé à une température T1 qui satisfait à la formule (1) ci-dessous. (1) 100 < {Fb(T1)/Fa(T1) Dans la formule (1) : Fa(t) représente la résistance au pelage du ruban adhésif de traitement de semi-conducteur à la température t par rapport à une plaque de cuivre ; Fa(T1) représente la valeur de Fa(t) à la température t = T1 ; Fb(t) représente la résistance au pelage de la bande de fixation temporaire à la température t par rapport au ruban adhésif de traitement de semi-conducteur ; et Fb(T1) représente la valeur de Fb(t) à la température t = T1.
PCT/JP2020/044352 2019-11-28 2020-11-27 Procédé de fabrication de dispositif à semi-conducteurs et stratifié pour traitement de semi-conducteurs WO2021107137A1 (fr)

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JP2021507090A JPWO2021107137A1 (fr) 2019-11-28 2020-11-27
CN202080048374.4A CN114097073A (zh) 2019-11-28 2020-11-27 半导体装置的制造方法及半导体加工用层叠体
KR1020217043070A KR20220106915A (ko) 2019-11-28 2020-11-27 반도체 장치의 제조 방법, 및, 반도체 가공용 적층체

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018082131A (ja) * 2016-11-18 2018-05-24 積水化学工業株式会社 半導体デバイスの製造方法及び保護テープ

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JP2601956B2 (ja) 1991-07-31 1997-04-23 リンテック株式会社 再剥離型粘着性ポリマー

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018082131A (ja) * 2016-11-18 2018-05-24 積水化学工業株式会社 半導体デバイスの製造方法及び保護テープ

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KR20220106915A (ko) 2022-08-01
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