WO2021103105A1 - 一种显示面板及电子装置 - Google Patents

一种显示面板及电子装置 Download PDF

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Publication number
WO2021103105A1
WO2021103105A1 PCT/CN2019/123476 CN2019123476W WO2021103105A1 WO 2021103105 A1 WO2021103105 A1 WO 2021103105A1 CN 2019123476 W CN2019123476 W CN 2019123476W WO 2021103105 A1 WO2021103105 A1 WO 2021103105A1
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Prior art keywords
metal layer
display panel
sub
layer
panel according
Prior art date
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PCT/CN2019/123476
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English (en)
French (fr)
Inventor
于晓平
Original Assignee
Tcl华星光电技术有限公司
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Publication date
Application filed by Tcl华星光电技术有限公司 filed Critical Tcl华星光电技术有限公司
Priority to US16/624,212 priority Critical patent/US11545576B2/en
Publication of WO2021103105A1 publication Critical patent/WO2021103105A1/zh

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Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133502—Antiglare, refractive index matching layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel and an electronic device.
  • the contrast ratio is one of the important indicators for evaluating the display quality of the display panel.
  • Contrast is related to the bright state brightness, dark state brightness and reflectivity of the display panel.
  • part of the ambient light enters the display panel and is reflected by the metal layer in the display panel.
  • the existing The metal layer of the display panel has a relatively high reflectivity, resulting in a relatively strong light intensity of the reflected light, which affects the contrast of the picture and reduces the display effect and display quality.
  • Contrast is related to the bright state brightness, dark state brightness and reflectivity of the display panel.
  • part of the ambient light enters the display panel and is reflected by the metal layer in the display panel.
  • the existing The metal layer of the display panel has a relatively high reflectivity, resulting in a relatively strong light intensity of the reflected light, which affects the contrast of the picture and reduces the display effect and display quality.
  • the purpose of the present invention is to provide a display panel and an electronic device that can improve the display effect and display quality.
  • the present invention provides a display panel, including:
  • the base substrate is provided with a metal layer and an anti-reflective film; the anti-reflective film is provided on the light emitting side of the metal layer, and the anti-reflective film includes a protective layer and a darkened layer.
  • the layer is located between the darkened layer and the metal layer, and the material of the darkened layer includes Mo a X b O c , Mo a X b N d , Mo a X b O c N d , Mo a X b At least one of W c , Mo a X b C c and Al a O b N c , where a, c and d are all rational numbers greater than 0, b is a rational number greater than or equal to 0, and X is tantalum, vanadium, nickel At least one of niobium, zirconium, tungsten, titanium, rhenium, and hafnium.
  • the present invention also provides an electronic device, which includes the above-mentioned display panel.
  • the display panel and the electronic device of the present invention include a base substrate on which a metal layer and an anti-reflective film are arranged; the anti-reflective film is arranged on the light-emitting side of the metal layer, and the anti-reflective film includes A protective layer and a darkened layer, the protective layer is located between the darkened layer and the metal layer, and the material of the darkened layer includes Mo a X b O c , Mo a X b N d , Mo a X At least one of b O c N d , Mo a X b W c , Mo a X b C c and Al a O b N c ; since the anti-reflection film is provided on the light-emitting side of the metal layer, the metal can be effectively reduced The reflection of the layer on the ambient light avoids affecting the contrast of the picture, thereby improving the display effect and display quality.
  • FIG. 1 is a schematic diagram of the structure of a display panel according to the first embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the structure of the display panel according to the second embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a display panel according to Embodiment 1 of the present invention.
  • the display panel of the present invention includes: a base substrate 11, a metal layer, and an anti-reflection film 20.
  • the base substrate 11 may be a glass substrate.
  • the metal layer is provided on the base substrate 11, the metal layer includes a first sub-metal layer 14 and a second sub-metal layer 18, and the second sub-metal layer 18 is provided on the first sub-metal layer 14.
  • the first sub-metal layer 14 includes a gate
  • the second sub-metal layer 18 includes a source and drain.
  • the thickness range of the first sub-metal layer 14 and the thickness range of the second sub-metal layer 18 are both 200 nm to 700 nm. When the thickness of the layer and the second sub-metal layer are within this range, the adhesion between the metal layer and the darkened layer can be improved.
  • the material of the metal layer includes at least one of Cu, Mo, Ti, Al, Ni, Nb, Ta, and Cr.
  • the materials of the first sub-metal layer 14 and the second sub-metal layer 18 both include at least one of Cu, Mo, Ti, Al, Ni, Nb, Ta, and Cr.
  • the anti-reflection film 20 is disposed under the gate 14. That is, it is arranged on the light emitting side of the first sub-metal layer 14.
  • the light emitting direction of the display panel of this embodiment is along the first preset direction (from top to bottom).
  • the array substrate faces the outside at this time, that is, the array substrate is close to the observer.
  • the anti-reflection film 20 may also be provided under the source and drain.
  • the anti-reflection film 20 is provided under the source and drain electrodes and under the gate 14.
  • the anti-reflection film 20 includes a darkening layer 21 and a protective layer 22.
  • the material of the darkening layer 21 includes Mo a X b O c , Mo a X b N d , Mo a X b O c N d , Mo a X b W c , Mo a X b C c, and Al a O b At least one of N c , where a, c, and d are all rational numbers greater than 0, b is a rational number greater than or equal to 0, and X is any of tantalum, vanadium, nickel, niobium, zirconium, tungsten, titanium, rhenium, and hafnium At least one.
  • the darkening layer 21 and the first sub-metal layer 14 have different refractive indexes, which interferes with the reflected light.
  • the thickness of the darkening layer 21 may range from 30 nm to 100 nm; preferably 40 to 60 nm.
  • the darkening layer 21 can be formed by directly selecting a corresponding substrate through deposition, or directly selecting a metal or metal alloy substrate, and then introducing oxygen, nitrogen, or CO2 during the deposition process.
  • the deposition method can be physical vapor deposition (PVD, Physical Vapor Deposition).
  • the protective layer 22 is located between the darkened layer 21 and the first sub-metal layer 14.
  • the function of the protective layer 22 is to improve the poor adhesion between the darkened layer 21 and the first sub-metal layer 14 The problem to avoid affecting the mitigation effect. If the darkened layer 21 is in direct contact with the first sub-metal layer 14 (such as Cu commonly used in the industry), the problem of poor adhesion will occur, which will cause the metal layer to infiltrate and be damaged during the subsequent patterning yellow light process. The darkened layer cannot achieve the purpose of reducing reflectivity.
  • the material of the protective layer 22 includes at least one of Mo, Ti, Si, SiOx, and SiNx.
  • the thickness of the protective layer 22 may range from 1 nm to 50 nm.
  • the anti-reflection film is provided under the gate and or under the source and drain, the reflected light generated by the first sub-metal layer and or the second sub-metal layer can be interfered, and the first sub-metal layer and or the second sub-metal layer can be reduced.
  • the reflectivity of the two sub-metal layers to ambient light avoids affecting the contrast, improves the image quality of the display panel, and further improves the display effect and display quality.
  • the display panel of this embodiment may further include a gate insulating layer 15 and an active layer 16.
  • the gate insulating layer 15 is disposed on the gate 14 and the active layer 16 is located between the gate and the source and drain.
  • the active layer 16 may include a substrate 161 and a doped layer 162.
  • the material of the substrate 161 is amorphous silicon, and the material of the doped layer 162 is n-type phosphorous heavily doped silicon.
  • the display panel of this embodiment may be a liquid crystal display panel or an organic light emitting diode display panel.
  • FIG. 2 is a schematic structural diagram of a display panel according to the second embodiment of the present invention.
  • the difference between the display panel of this embodiment and the first embodiment is that the light emitting direction of the display panel of this embodiment is the second preset direction, that is, the light emitting direction of the display panel of this embodiment goes from bottom to top.
  • the light-emitting direction of this embodiment is opposite to that of the first embodiment.
  • the color filter substrate faces the outside, that is, the color filter substrate is close to the observer.
  • the anti-reflection film 20 of this embodiment is disposed above the source and drain 18. In another embodiment, the anti-reflection film 20 is disposed above the gate 14. In other embodiments, the anti-reflection film 20 is provided above the gate 14 and above the source and drain.
  • the darkening layer 21 and the second sub-metal layer 18 have different refractive indexes, which interferes with the reflected light.
  • the protective layer 22 is located between the darkened layer 21 and the second sub-metal layer 18, and the function of the protective layer 22 is to improve the poor adhesion between the darkened layer 21 and the second sub-metal layer 18 The problem to avoid affecting the mitigation effect. If the darkening layer 21 is in direct contact with the first sub-metal layer 18 (such as Cu commonly used in the industry), the problem of poor adhesion will occur, which will cause the metal layer to infiltrate and damage the darker during the subsequent patterning yellow light process. The chemical layer cannot achieve the purpose of reducing reflectivity.
  • the anti-reflection film is arranged above the source and drain and or the gate, the reflected light generated by the second metal layer and or the first sub-metal layer can be interfered, and the first sub-metal layer and or the second sub-metal layer can be reduced.
  • the reflectivity of the layer to the ambient light avoids affecting the contrast, improves the image quality of the display panel, and further improves the display effect and display quality.
  • the present invention also provides an electronic device, which includes any one of the above-mentioned display panels.
  • the electronic device may be an electronic product such as a mobile phone or a tablet computer.
  • the display panel and the electronic device of the present invention include a base substrate on which a metal layer and an anti-reflective film are arranged; the anti-reflective film is arranged on the light-emitting side of the metal layer, and the anti-reflective film includes A protective layer and a darkened layer, the protective layer is located between the darkened layer and the metal layer, and the material of the darkened layer includes Mo a X b O c , Mo a X b N d , Mo a X At least one of b O c N d , Mo a X b W c , Mo a X b C c and Al a O b N c ; since the anti-reflection film is provided on the light-emitting side of the metal layer, the metal can be effectively reduced The reflection of the layer on the ambient light avoids affecting the contrast of the picture, thereby improving the display effect and display quality.

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  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种显示面板及电子装置，该面板包括：衬底基板，所述衬底基板上设置有金属层和减反膜；所述减反膜设于所述金属层的出光侧，所述减反膜包括保护层和暗化层，所述保护层位于所述暗化层和所述金属层之间，所述暗化层的材料包括Mo aX bO c、Mo aX bN d、Mo aX bO cN d、Mo aX bW c、Mo aX bC c以及Al aO bN c中的至少一种，其中a、c和d均为大于0的有理数、b为大于等于0的有理数，X为钽、钒、镍、铌、锆、钨、钛、铼以及铪中的至少一种。本发明的显示面板及电子装置，能够提高显示效果和显示质量。

Description

一种显示面板及电子装置 技术领域
本发明涉及显示技术领域，特别是涉及一种显示面板及电子装置。
 背景技术
随着显示面板的不断发展，用户对显示面板的要求越来越高，其中对比度是评估显示面板的显示质量的重要指标之一。
对比度与显示面板的亮态亮度、暗态亮度以及反射率相关，在实际使用过程中，由于周围环境光的影响，部分环境光进入显示面板，被显示面板中的金属层反射，然而现有的显示面板的金属层的反射率较大，导致反射光的光强比较强，从而影响画面的对比度，降低了显示效果和显示质量。
因此，有必要提供一种显示面板及电子装置，以解决现有技术所存在的问题。
 技术问题
对比度与显示面板的亮态亮度、暗态亮度以及反射率相关，在实际使用过程中，由于周围环境光的影响，部分环境光进入显示面板，被显示面板中的金属层反射，然而现有的显示面板的金属层的反射率较大，导致反射光的光强比较强，从而影响画面的对比度，降低了显示效果和显示质量。
因此，有必要提供一种显示面板及电子装置，以解决现有技术所存在的问题。
 技术解决方案
本发明的目的在于提供一种显示面板及电子装置，能够提高显示效果和显示质量。
为解决上述技术问题，本发明提供一种显示面板，包括：
衬底基板，所述衬底基板上设置有金属层和减反膜；所述减反膜设于所述金属层的出光侧，所述减反膜包括保护层和暗化层，所述保护层位于所述暗化层和所述金属层之间，所述暗化层的材料包括Mo aX bO c、Mo aX bN d、Mo aX bO cN d、Mo aX bW c、Mo aX bC c以及Al aO bN c中的至少一种，其中a、c和d均为大于0的有理数、b为大于等于0的有理数，X为钽、钒、镍、铌、锆、钨、钛、铼以及铪中的至少一种。
本发明还提供一种电子装置，其包括上述显示面板。
 有益效果
本发明的显示面板及电子装置，包括衬底基板，所述衬底基板上设置有金属层和减反膜；所述减反膜设于所述金属层的出光侧，所述减反膜包括保护层和暗化层，所述保护层位于所述暗化层和所述金属层之间，所述暗化层的材料包括Mo aX bO c、Mo aX bN d、Mo aX bO cN d、Mo aX bW c、Mo aX bC c以及Al aO bN c中的至少一种；由于在金属层的出光侧设置减反膜，因此可以有效地减少金属层对环境光的反射，避免影响画面的对比度，进而提高了显示效果和显示质量。
附图说明
图1为本发明实施例一的显示面板的结构示意图。
图2为本发明实施例二的显示面板的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1，图1为本发明实施例一的显示面板的结构示意图。
如图1所示，本发明的显示面板包括：衬底基板11、金属层以及减反膜20。
其中衬底基板11可以为玻璃基板。
金属层设于衬底基板11上，金属层包括第一子金属层14和第二子金属层18，第二子金属层18设于第一子金属层14上。其中第一子金属层14包括栅极，第二子金属层18包括源漏极。在一实施方式中，为了进一步减小环境光的反射，所述第一子金属层14的厚度范围和所述第二子金属层18的厚度范围均为200nm ~700nm，此外当第一子金属层和第二子金属层的厚度在此范围内时，可以提高金属层与暗化层之间的附着力。在一实施方式中，为了提高薄膜晶体管的导电性能，所述金属层的材料包括Cu、Mo、Ti、Al、Ni、Nb、Ta以及Cr中的至少一种。其中第一子金属层14和第二子金属层18的材料均包括Cu、Mo、Ti、Al、Ni、Nb、Ta、Cr中的至少一种。
所述减反膜20设于所述栅极14的下方。也即设于第一子金属层14的出光侧。其中本实施例的显示面板的出光方向沿第一预设方向（由上向下），以液晶显示面板为例，此时阵列基板朝向外侧，也即阵列基板靠近观察者。在另一实施方式中，所述减反膜20也可设于所述源漏极的下方。在其他实施方式中，在所述源漏极的下方以及所述栅极14的下方均设置有所述减反膜20。
所述减反膜20包括暗化层21和保护层22。
所述暗化层21的材料包括Mo aX bO c、Mo aX bN d、Mo aX bO cN d、Mo aX bW c、Mo aX bC c以及Al aO bN c中的至少一种，其中a、c和d均为大于0的有理数、b为大于等于0的有理数，X为钽、钒、镍、铌、锆、钨、钛、铼以及铪中的至少一种。其中暗化层21与第一子金属层14的折射率不同，从而对反射光产生干涉。所述暗化层21的厚度范围可为30nm ~100nm；优选40~60nm。所述暗化层21可以直接选择对应的基材通过沉积方式形成，也可以直接选择金属或金属合金的基材，然后在沉积制程时通入氧气或氮气或CO2制备而成。其中沉积方式可以为物理气相沉积（PVD，Physical Vapor Deposition）。
所述保护层22位于所述暗化层21和所述第一子金属层14之间，所述保护层22的作用是为了改善暗化层21与第一子金属层14的附着力不佳的问题，以避免影响减反效果。如果暗化层21直接与第一子金属层14（比如业界常用的Cu）直接接触，会出现附着力不佳的问题，进而导致金属层在后续图案化的黄光制程中显影液渗入而损坏暗化层，无法达成降低反射率的目的。
在一实施方式中，为了提高金属层与暗化层之间的附着力，进一步降低环境光的反射，所述保护层22的材料包括Mo、Ti、Si、SiOx以及SiNx中至少一种。所述保护层22的厚度范围可为1nm ~50nm。
由于在栅极的下方和或源漏极的下方设置减反膜，因此可以对第一子金属层和或第二子金属层产生的反射光进行干涉，降低了第一子金属层和或第二子金属层对环境光的反射率，避免影响对比度，提升显示面板的画质，进而提高了显示效果和显示质量。
在一实施方式中，本实施例的显示面板还可包括栅绝缘层15和有源层16。栅绝缘层15设于栅极14上，有源层16位于栅极和源漏极之间。有源层16可以包括基底161和掺杂层162，基底161的材料为非晶硅，掺杂层162的材料为n型的磷重掺杂硅。
可以理解的，本实施例的显示面板可以为液晶显示面板或者有机发光二极管显示面板。
请参照图2，图2为本发明实施例二的显示面板的结构示意图。
如图2所示，本实施例的显示面板与实施例一的区别在于，本实施例的显示面板的出光方向为第二预设方向，也即本实施例的显示面板的出光方向由下向上，本实施例的出光方向与实施例一的出光方向相反，以显示面板为液晶显示面板为例，此时彩膜基板朝向外侧，也即彩膜基板靠近观察者。
且本实施例的减反膜20设于所述源漏极18的上方。在另一实施方式中，所述减反膜20设于所述栅极14的上方。在其他实施方式中，在所述栅极14的上方和所述源漏极的上方均设置有所述减反膜20。
其中暗化层21与第二子金属层18的折射率不同，从而对反射光产生干涉。
所述保护层22位于所述暗化层21和所述第二子金属层18之间，所述保护层22的作用是为了改善暗化层21与第二子金属层18的附着力不佳的问题，以避免影响减反效果。如果暗化层21直接与第一子金属层18（比如业界常用的Cu）直接接触，会出现附着力不佳的问题，进而导致金属层在后续图案化的黄光制程中显影液渗入损坏暗化层，无法达成降低反射率的目的。
由于在源漏极和或栅极的上方设置减反膜，因此可以对第二金属层和或第一子金属层产生的反射光进行干涉，降低了第一子金属层和或第二子金属层对环境光的反射率，避免影响对比度，提升显示面板的画质，进而提高了显示效果和显示质量。
本发明还提供一种电子装置，其包括上述任意一种所述显示面板。该电子装置可以为手机、平板电脑等电子产品。
本发明的显示面板及电子装置，包括衬底基板，所述衬底基板上设置有金属层和减反膜；所述减反膜设于所述金属层的出光侧，所述减反膜包括保护层和暗化层，所述保护层位于所述暗化层和所述金属层之间，所述暗化层的材料包括Mo aX bO c、Mo aX bN d、Mo aX bO cN d、Mo aX bW c、Mo aX bC c以及Al aO bN c中的至少一种；由于在金属层的出光侧设置减反膜，因此可以有效地减少金属层对环境光的反射，避免影响画面的对比度，进而提高了显示效果和显示质量。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (19)

  1. 一种显示面板，其中，包括：
    衬底基板，所述衬底基板上设置有金属层和减反膜；所述减反膜设于所述金属层的出光侧，所述减反膜包括保护层和暗化层，所述保护层位于所述暗化层和所述金属层之间，所述暗化层的材料包括Mo aX bO c、Mo aX bN d、Mo aX bO cN d、Mo aX bW c、Mo aX bC c以及Al aO bN c中的至少一种，其中a、c和d均为大于0的有理数、b为大于等于0的有理数，X为钽、钒、镍、铌、锆、钨、钛、铼以及铪中的至少一种；所述保护层的材料包括Mo、Ti、Si、SiOx以及SiNx中至少一种；所述金属层包括第一子金属层和设于所述第一子金属层上的第二子金属层，所述第一子金属层包括栅极，所述第二子金属层包括源漏极；当所述显示面板的出光方向沿第一预设方向时，所述减反膜设于所述栅极和/所述源漏极的下方。
  2. 一种显示面板，其中，包括：
    衬底基板，所述衬底基板上设置有金属层和减反膜；所述减反膜设于所述金属层的出光侧，所述减反膜包括保护层和暗化层，所述保护层位于所述暗化层和所述金属层之间，所述暗化层的材料包括Mo aX bO c、Mo aX bN d、Mo aX bO cN d、Mo aX bW c、Mo aX bC c以及Al aO bN c中的至少一种，其中a、c和d均为大于0的有理数、b为大于等于0的有理数，X为钽、钒、镍、铌、锆、钨、钛、铼以及铪中的至少一种。
  3. 根据权利要求2所述的显示面板，其中，
    所述保护层的材料包括Mo、Ti、Si、SiOx以及SiNx中至少一种。
  4. 根据权利要求2所述的显示面板，其中，
    所述金属层包括第一子金属层和设于所述第一子金属层上的第二子金属层，所述第一子金属层包括栅极，所述第二子金属层包括源漏极；
    当所述显示面板的出光方向沿第一预设方向时，所述减反膜设于所述栅极和/所述源漏极的下方。
  5. 根据权利要求4所述的显示面板，其中，
    当所述显示面板的出光方向沿第二预设方向时，所述减反膜设于所述栅极和/所述源漏极的上方。
  6. 根据权利要求4所述的显示面板，其中，
    所述第一子金属层的厚度范围和所述第二子金属层的厚度范围均为200nm ~700nm。
  7. 根据权利要求2所述的显示面板，其中，
    所述暗化层的厚度范围为30nm~100nm。
  8. 根据权利要求2所述的显示面板，其中，
    所述保护层的厚度范围为1nm~50nm。
  9. 根据权利要求2所述的显示面板，其中，
    所述显示面板为液晶显示面板或者有机发光二极管显示面板。
  10. 根据权利要求2所述的显示面板，其中，
    所述金属层的材料包括Cu、Mo、Ti、Al、Ni、Nb、Ta以及Cr中的至少一种。
  11. 一种电子装置，其中，包括显示面板；
    所述显示面板包括：衬底基板，所述衬底基板上设置有金属层和减反膜；所述减反膜设于所述金属层的出光侧，所述减反膜包括保护层和暗化层，所述保护层位于所述暗化层和所述金属层之间，所述暗化层的材料包括Mo aX bO c、Mo aX bN d、Mo aX bO cN d、Mo aX bW c、Mo aX bC c以及Al aO bN c中的至少一种，其中a、c和d均为大于0的有理数、b为大于等于0的有理数，X为钽、钒、镍、铌、锆、钨、钛、铼以及铪中的至少一种。
  12. 根据权利要求11所述的显示面板，其中，
    所述保护层的材料包括Mo、Ti、Si、SiOx以及SiNx中至少一种。
  13. 根据权利要求11所述的显示面板，其中，
    所述金属层包括第一子金属层和设于所述第一子金属层上的第二子金属层，所述第一子金属层包括栅极，所述第二子金属层包括源漏极；
    当所述显示面板的出光方向沿第一预设方向时，所述减反膜设于所述栅极和/所述源漏极的下方。
  14. 根据权利要求13所述的显示面板，其中，
    当所述显示面板的出光方向沿第二预设方向时，所述减反膜设于所述栅极和/所述源漏极的上方。
  15. 根据权利要求13所述的显示面板，其中，
    所述第一子金属层的厚度范围和所述第二子金属层的厚度范围均为200nm ~700nm。
  16. 根据权利要求11所述的显示面板，其中，
    所述暗化层的厚度范围为30nm~100nm。
  17. 根据权利要求11所述的显示面板，其中，
    所述保护层的厚度范围为1nm~50nm。
  18. 根据权利要求11所述的显示面板，其中，
    所述显示面板为液晶显示面板或者有机发光二极管显示面板。
  19. 根据权利要求11所述的显示面板，其中，
    所述金属层的材料包括Cu、Mo、Ti、Al、Ni、Nb、Ta以及Cr中的至少一种。
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