WO2021100675A1 - 固体撮像装置および電子機器 - Google Patents

固体撮像装置および電子機器 Download PDF

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Publication number
WO2021100675A1
WO2021100675A1 PCT/JP2020/042691 JP2020042691W WO2021100675A1 WO 2021100675 A1 WO2021100675 A1 WO 2021100675A1 JP 2020042691 W JP2020042691 W JP 2020042691W WO 2021100675 A1 WO2021100675 A1 WO 2021100675A1
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WO
WIPO (PCT)
Prior art keywords
vertical gate
photoelectric conversion
light
pixels
gate electrodes
Prior art date
Application number
PCT/JP2020/042691
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English (en)
French (fr)
Japanese (ja)
Inventor
勇佑 松村
貴志 町田
英男 城戸
僚 福井
由宇 椎原
Original Assignee
ソニーセミコンダクタソリューションズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by ソニーセミコンダクタソリューションズ株式会社 filed Critical ソニーセミコンダクタソリューションズ株式会社
Priority to US17/755,841 priority Critical patent/US20220415945A1/en
Priority to EP20890170.2A priority patent/EP4064332A4/en
Priority to JP2021558378A priority patent/JPWO2021100675A1/ja
Priority to CN202080073188.6A priority patent/CN114556576A/zh
Publication of WO2021100675A1 publication Critical patent/WO2021100675A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Definitions

  • the floating diffusion FD is a floating diffusion region that temporarily holds the electric charge output from the photodiode PD via the transfer transistor TRX.
  • a reset transistor RST is connected to the floating diffusion FD, and a vertical signal line VSL is connected via an amplification transistor AMP and a selection transistor SEL.
  • the second crystal plane is inclined with respect to the X-axis and the Y-axis in the horizontal plane (XY plane), and forms an angle of about 30 ° with respect to the Y-axis, for example.
  • the third surface is a surface along the third crystal plane of the semiconductor substrate 31.
  • the third crystal plane of the semiconductor substrate 31 is inclined by about 19.5 ° with respect to the Z-axis direction, like the second crystal plane. That is, the inclination angle of the third crystal plane with respect to the horizontal plane (XY plane) is about 70.5 °.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
PCT/JP2020/042691 2019-11-18 2020-11-17 固体撮像装置および電子機器 WO2021100675A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US17/755,841 US20220415945A1 (en) 2019-11-18 2020-11-17 Solid-state imaging device and electronic apparatus
EP20890170.2A EP4064332A4 (en) 2019-11-18 2020-11-17 SOLID STATE IMAGING DEVICE AND ELECTRONIC DEVICE
JP2021558378A JPWO2021100675A1 (zh) 2019-11-18 2020-11-17
CN202080073188.6A CN114556576A (zh) 2019-11-18 2020-11-17 固态摄像装置和电子设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019207923 2019-11-18
JP2019-207923 2019-11-18

Publications (1)

Publication Number Publication Date
WO2021100675A1 true WO2021100675A1 (ja) 2021-05-27

Family

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PCT/JP2020/042691 WO2021100675A1 (ja) 2019-11-18 2020-11-17 固体撮像装置および電子機器

Country Status (6)

Country Link
US (1) US20220415945A1 (zh)
EP (1) EP4064332A4 (zh)
JP (1) JPWO2021100675A1 (zh)
CN (1) CN114556576A (zh)
TW (1) TW202137529A (zh)
WO (1) WO2021100675A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11393854B2 (en) * 2019-01-07 2022-07-19 Samsung Electronics Co., Ltd. Image sensor with photoelectric part and transfer gate on opposite sides of the substrate
WO2023171129A1 (ja) * 2022-03-10 2023-09-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2024014326A1 (ja) * 2022-07-14 2024-01-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2024058010A1 (ja) * 2022-09-13 2024-03-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220093667A1 (en) * 2020-09-23 2022-03-24 Semiconductor Components Industries, Llc Global shutter sensor systems and related methods

Citations (14)

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JP2010114273A (ja) 2008-11-06 2010-05-20 Sony Corp 固体撮像装置、及び電子機器
JP2011014751A (ja) * 2009-07-03 2011-01-20 Sony Corp 固体撮像素子、トランジスタ、トランジスタの製造方法、および電子機器
JP2011159757A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、固体撮像装置の駆動方法、及び電子機器
WO2013065569A1 (ja) * 2011-11-04 2013-05-10 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
US20150279883A1 (en) * 2014-03-31 2015-10-01 Stmicroelectronics Sa Vertical gate transistor and pixel structure comprising such a transistor
WO2016136486A1 (ja) * 2015-02-27 2016-09-01 ソニー株式会社 固体撮像装置及び電子機器
JP2016187007A (ja) * 2015-03-27 2016-10-27 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
US20170203954A1 (en) * 2016-01-19 2017-07-20 Rosemount Aerospace Inc. Mems pressure sensor with modified cavity to improve burst pressure
JP2018093126A (ja) * 2016-12-07 2018-06-14 ソニーセミコンダクタソリューションズ株式会社 受光素子、撮像素子および電子機器
WO2018163732A1 (ja) * 2017-03-06 2018-09-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法
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WO2019240207A1 (ja) * 2018-06-15 2019-12-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその製造方法、電子機器
WO2020095674A1 (ja) * 2018-11-05 2020-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子および製造方法、並びに電子機器

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JP2010114273A (ja) 2008-11-06 2010-05-20 Sony Corp 固体撮像装置、及び電子機器
JP2011014751A (ja) * 2009-07-03 2011-01-20 Sony Corp 固体撮像素子、トランジスタ、トランジスタの製造方法、および電子機器
JP2011159757A (ja) * 2010-01-29 2011-08-18 Sony Corp 固体撮像装置とその製造方法、固体撮像装置の駆動方法、及び電子機器
WO2013065569A1 (ja) * 2011-11-04 2013-05-10 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
US20150279883A1 (en) * 2014-03-31 2015-10-01 Stmicroelectronics Sa Vertical gate transistor and pixel structure comprising such a transistor
WO2016136486A1 (ja) * 2015-02-27 2016-09-01 ソニー株式会社 固体撮像装置及び電子機器
JP2016187007A (ja) * 2015-03-27 2016-10-27 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
US20170203954A1 (en) * 2016-01-19 2017-07-20 Rosemount Aerospace Inc. Mems pressure sensor with modified cavity to improve burst pressure
JP2018093126A (ja) * 2016-12-07 2018-06-14 ソニーセミコンダクタソリューションズ株式会社 受光素子、撮像素子および電子機器
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WO2019188043A1 (ja) * 2018-03-26 2019-10-03 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像装置の製造方法
JP2019207923A (ja) 2018-05-29 2019-12-05 信越半導体株式会社 シリコンウェーハの洗浄方法
WO2019240207A1 (ja) * 2018-06-15 2019-12-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその製造方法、電子機器
WO2020095674A1 (ja) * 2018-11-05 2020-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子および製造方法、並びに電子機器

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Title
See also references of EP4064332A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11393854B2 (en) * 2019-01-07 2022-07-19 Samsung Electronics Co., Ltd. Image sensor with photoelectric part and transfer gate on opposite sides of the substrate
WO2023171129A1 (ja) * 2022-03-10 2023-09-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2024014326A1 (ja) * 2022-07-14 2024-01-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2024058010A1 (ja) * 2022-09-13 2024-03-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Also Published As

Publication number Publication date
EP4064332A1 (en) 2022-09-28
EP4064332A4 (en) 2023-04-19
US20220415945A1 (en) 2022-12-29
CN114556576A (zh) 2022-05-27
TW202137529A (zh) 2021-10-01
JPWO2021100675A1 (zh) 2021-05-27

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