WO2021095302A1 - 半導体装置の製造方法、並びにダイシング・ダイボンディング一体型フィルム及びその製造方法 - Google Patents

半導体装置の製造方法、並びにダイシング・ダイボンディング一体型フィルム及びその製造方法 Download PDF

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Publication number
WO2021095302A1
WO2021095302A1 PCT/JP2020/027885 JP2020027885W WO2021095302A1 WO 2021095302 A1 WO2021095302 A1 WO 2021095302A1 JP 2020027885 W JP2020027885 W JP 2020027885W WO 2021095302 A1 WO2021095302 A1 WO 2021095302A1
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Prior art keywords
adhesive layer
region
dicing
pressure
adhesive
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PCT/JP2020/027885
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English (en)
French (fr)
Japanese (ja)
Inventor
強 田澤
尚弘 木村
修一 森
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昭和電工マテリアルズ株式会社
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Priority to KR1020227016995A priority Critical patent/KR20220100885A/ko
Priority to CN202080078717.1A priority patent/CN114730706A/zh
Publication of WO2021095302A1 publication Critical patent/WO2021095302A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Definitions

  • the present disclosure relates to a method for manufacturing a semiconductor device, a dicing / die bonding integrated film, and a method for manufacturing the same.
  • the dicing step is carried out with the adhesive film for dicing attached to the wafer.
  • an expanding step, a picking step, a die bonding step, and the like are carried out.
  • a film called a dicing / die bonding integrated film is used in the manufacturing process of semiconductor devices.
  • This film has a structure in which a base material layer, an adhesive layer, and an adhesive layer are laminated in this order, and is used, for example, as follows. First, the surface on the adhesive layer side is attached to the wafer, and the wafer is diced with the wafer fixed by the dicing ring. As a result, the wafer is fragmented into a large number of chips. Subsequently, after weakening the adhesive force of the adhesive layer against the adhesive layer by irradiating the adhesive layer with ultraviolet rays, the chip is attached from the adhesive layer together with the adhesive piece obtained by separating the adhesive layer into individual pieces. Pick up.
  • the semiconductor device is manufactured through a step of mounting the chip on a substrate or the like via an adhesive piece.
  • a laminate composed of a chip obtained through a dicing step and an adhesive piece attached to the chip is referred to as a chip with an adhesive piece.
  • the adhesive layer (dicing film) whose adhesive strength is weakened by irradiation with ultraviolet rays is called a UV curable type.
  • a pressure-sensitive adhesive layer in which the adhesive strength remains constant without being irradiated with ultraviolet rays in the manufacturing process of a semiconductor device is called a pressure-sensitive type.
  • the dicing / die bonding integrated film having a pressure-sensitive pressure-sensitive adhesive layer does not require a process of irradiating ultraviolet rays for users (mainly semiconductor device manufacturers), and does not require equipment for this purpose. There are merits.
  • Patent Document 1 can be said to be a UV curable type in that the pressure-sensitive adhesive layer contains a component that is cured by ultraviolet rays, while only a predetermined portion of the pressure-sensitive adhesive layer is preliminarily irradiated with ultraviolet rays, and the user can use the semiconductor device.
  • a dicing die bond film which can be said to be a pressure sensitive type in that it does not need to be irradiated with ultraviolet rays in the manufacturing process.
  • the adhesive layer of the dicing / die bond integrated film is required to have high adhesive strength to the adhesive layer and the dicing ring in the dicing process. If the adhesive strength of the adhesive layer is insufficient, peeling occurs between the adhesive layer and the adhesive layer as the dicing blade rotates at high speed, the adhesive layer breaks, and pieces of the adhesive layer scatter. The phenomenon occurs. This phenomenon is called "DAF jump". In addition, DAF means Die attach film. Alternatively, a phenomenon in which the dicing ring is peeled off from the adhesive layer due to the flow of cutting water (hereinafter, this phenomenon is referred to as "ring peeling”) occurs.
  • dicing / die bond integrated films have a need to irradiate activation energy rays (for example, ultraviolet rays) under certain conditions as much as possible. Therefore, for example, even if the adhesive strength of the adhesive layer changes due to a change in the formulation of the dicing / die bond integrated film, the user is required to flexibly adjust the irradiation conditions of the activation energy ray. Is in a difficult situation.
  • activation energy rays for example, ultraviolet rays
  • the present disclosure provides a dicing / die bonding integrated film and a method for manufacturing the same, which is convenient for the user and useful for efficiently manufacturing a semiconductor device.
  • the present disclosure also provides a method for manufacturing a semiconductor device using the dicing / die bonding integrated film.
  • One aspect of the present disclosure relates to a method of manufacturing a semiconductor device.
  • This manufacturing method includes the following steps.
  • A) A first region in which a base material layer, an adhesive layer, and an adhesive layer are laminated in this order, and the adhesive layer has a preliminarily reduced adhesive force to the adhesive layer due to irradiation with active energy rays.
  • Step of preparing a film with integrated dying and die bonding (B) Step of stealth dying or half-cutting the wafer with a blade (C) Attaching the wafer to the region corresponding to the first region in the adhesive layer.
  • Step (D) By expanding the base material layer under cooling conditions, a chip with adhesive pieces in which the wafer and the adhesive layer are separated is obtained.
  • Step (E) The adhesive layer is irradiated with activation energy rays.
  • a step of reducing the adhesive force of the adhesive layer to the adhesive-scraped chip (F) a step of picking up the adhesive-scraped chip from the adhesive layer with the base material layer expanded (G)
  • the step of mounting on a substrate or other chip, and the die-bonding-integrated film in step (A) is an adhesive measured at a temperature of 23 ° C. under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min.
  • the adhesive strength of the first region to the layer is 6.0 N / 25 mm or more and 12.5 N / 25 mm or less.
  • a dicing / die bonding integrated film in which the adhesive force of the adhesive layer to the adhesive layer is adjusted in advance by irradiation with active energy rays (first irradiation) is used, and in the step (E). Irradiation with activation energy rays (second irradiation) reduces the adhesive strength of the adhesive layer to the adhesive-cleaned chips. Therefore, the occurrence of DAF skipping or chip edge peeling in the step (D) can be sufficiently suppressed, and excellent pick-up property can be achieved in the step (F).
  • the adhesive-cleaning tip obtained in step (D) may have a relatively large size. That is, the adhesive-scraped tip may have a square or rectangular shape and a side of 6.0 mm or more in a plan view. A chip with a relatively large adhesive piece is likely to warp, and as a result, the chip with a piece of adhesive is peeled off in the step (D), the tip is likely to crack in the step (F), or a pickup failure is likely to occur. According to the manufacturing method according to the present disclosure, these defects in the step (F) can be sufficiently suppressed.
  • the pressure-sensitive adhesive layer may have a second region in which the adhesive force to the pressure-sensitive adhesive layer is larger than that of the first region.
  • the dicing ring can be attached to the second region at the same time as the step (C) or before the step (D).
  • the dicing / die bonding integrated film according to one aspect of the present disclosure is arranged between the base material layer, the adhesive layer, and the base material layer and the adhesive layer, and is applied to the adhesive layer by irradiation with active energy rays.
  • a first region with respect to the adhesive layer which comprises an adhesive layer having a first region in which the adhesive strength is previously reduced, and is measured at a temperature of 23 ° C. under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min.
  • the adhesive strength of is 6.0 N / 25 mm or more and 12.5 N / 25 mm or less.
  • the adhesive force of the adhesive to the adhesive layer is adjusted in advance by irradiation with active energy rays.
  • the user can be activated by adjusting the adhesive strength in advance and providing it to the user.
  • the production of the semiconductor device can be continued under the conventional conditions without changing the irradiation conditions of the energy ray.
  • the dicing / die bonding integrated film has a peeling angle of 30 ° and a peeling speed at a temperature of 23 ° C. after irradiation of the first region with an amount of ultraviolet rays of 150 mJ / cm 2.
  • the adhesive strength of the first region to the adhesive layer, measured under the condition of 60 mm / min, is preferably 1.2 N / 25 mm or less.
  • the dicing / die bonding integrated film can be applied to a semiconductor device manufacturing process including a step of fragmenting a wafer into a plurality of chips having an area of 30 to 250 mm 2.
  • One aspect of the present disclosure relates to the method for producing the dicing / die bonding integrated film.
  • the first aspect of this production method is formed on the surface of the base material layer, a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays, and on the surface of the pressure-sensitive adhesive layer.
  • a step of producing a laminated body including the adhesive layer and a step of irradiating a region to be a first region of the pressure-sensitive adhesive layer contained in the laminated body with active energy rays are included.
  • the second aspect of this production method is a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays on the surface of the base material layer, and a pressure-sensitive adhesive layer.
  • the step of irradiating the region to be the first region of the above with active energy rays and the step of laminating the adhesive layer on the surface of the pressure-sensitive adhesive layer after irradiating the active energy rays are included in this order.
  • a dicing / die bonding integrated film and a method for manufacturing the same, which are convenient for the user and useful for efficiently manufacturing a semiconductor device. Further, according to the present disclosure, a method for manufacturing a semiconductor device using the dicing / die bonding integrated film is provided.
  • FIG. 1A is a plan view showing an embodiment of a dicing / diebonding integrated film
  • FIG. 1B is a schematic cross-sectional view taken along line BB shown in FIG. 1A
  • FIG. 2 is a schematic view showing a state in which a dicing ring is attached to the peripheral edge of the adhesive layer of the dicing / die bonding integrated film and a wafer is attached to the surface of the adhesive layer.
  • FIG. 3 is a cross-sectional view schematically showing how the 30 ° peel strength of the adhesive layer with respect to the adhesive layer is measured.
  • FIG. 4 is a schematic cross-sectional view of an embodiment of a semiconductor device.
  • 5 (a) and 5 (b) are cross-sectional views schematically showing a process of manufacturing a chip with an adhesive piece.
  • 6 (a) to 6 (c) are cross-sectional views schematically showing a process of manufacturing a chip with an adhesive piece.
  • 7 (a) and 7 (b) are cross-sectional views schematically showing a process of manufacturing the semiconductor device shown in FIG.
  • (meth) acrylic means acrylic or methacrylic.
  • FIG. 1A is a plan view showing a dicing / diebonding integrated film according to the present embodiment
  • FIG. 1B is a schematic cross-sectional view taken along the line BB of FIG.
  • the dicing / die bonding integrated film 10 (hereinafter, simply referred to as “film 10” in some cases) includes a base material layer 1, a first surface F1 facing the base material layer 1, and a second surface on the opposite side thereof.
  • the pressure-sensitive adhesive layer 3 having the surface F2 and the adhesive layer 5 provided so as to cover the central portion of the second surface F2 of the pressure-sensitive adhesive layer 3 are provided in this order.
  • the base material layer 1 has a predetermined length
  • the laminated body of the adhesive layer 3 and the adhesive layer 5 may be arranged at predetermined intervals so as to have (100 m or more) and line up in the longitudinal direction thereof.
  • the pressure-sensitive adhesive layer 3 has a first region 3a including at least a region Rw corresponding to a bonding position of the wafer W in the adhesive layer 5, and a second region 3b located so as to surround the first region 3a. ..
  • the broken line in FIG. 1A indicates the boundary between the first region 3a and the second region 3b.
  • the first region 3a and the second region 3b consist of the same composition before irradiation with active energy rays.
  • the first region 3a is a region in which the adhesive strength is reduced as compared with the second region 3b by being irradiated with active energy rays such as ultraviolet rays.
  • the second region 3b is a region to which the dicing ring DR is attached (see FIG. 2).
  • the second region 3b is a region not irradiated with active energy rays and has a high adhesive force to the dicing ring DR.
  • the adhesive force of the first region 3a with respect to the adhesive layer 5 is 6.0 N / 25 mm or more and 12.5 N / 25 mm or less.
  • This adhesive strength is a 30 ° peel strength measured under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min at a temperature of 23 ° C.
  • FIG. 3 is a cross-sectional view schematically showing how the 30 ° peel strength of the adhesive layer 3 is measured with the adhesive layer 5 of the measurement sample (width 25 mm ⁇ length 100 mm) fixed to the support plate 80. Is.
  • the lower limit of the adhesive strength may be 6.5 N / 25 mm or 7.0 N / 25 mm, and the upper limit may be 11.5 N / 25 mm or 10.5 N / 25 mm.
  • the adhesive force of the first region 3a to the adhesive layer 5 is 1.2 N / 25 mm or less after the first region 3a is irradiated with an amount of ultraviolet rays (main wavelength: 365 nm) of 150 mJ / cm 2. It is preferably 0.4 N / 25 mm or more and 1.2 N / 25 mm or less, or 0.5 N / 25 mm or more and 1.1 N / 25 mm or less. According to the film 10 provided with the pressure-sensitive adhesive layer 3, excellent pick-up property can be achieved.
  • This adhesive strength is a 30 ° peel strength measured under the conditions of a peeling angle of 30 ° and a peeling speed of 60 mm / min at a temperature of 23 ° C. (see FIG. 3).
  • the adhesive strength of the second region 3b to the stainless steel substrate is preferably 0.2 N / 25 mm or more.
  • This adhesive strength is a 90 ° peel strength measured under the conditions of a peeling angle of 90 ° and a peeling speed of 50 mm / min at a temperature of 23 ° C.
  • the lower limit of the adhesive strength may be 0.3 N / 25 mm or 0.4 N / 25 mm, and the upper limit may be, for example, 2.0 N / 25 mm and 1.0 N / 25 mm.
  • the pressure-sensitive adhesive layer before irradiation with active energy rays is composed of, for example, a pressure-sensitive adhesive composition containing a (meth) acrylic resin, a photopolymerization initiator, and a cross-linking agent.
  • the second region 3b which is not irradiated with the active energy ray, has the same composition as the pressure-sensitive adhesive layer before the irradiation with the active energy ray.
  • the components contained in the pressure-sensitive adhesive composition will be described in detail.
  • the pressure-sensitive adhesive composition preferably contains a (meth) acrylic resin having a chain-polymerizable functional group, and the functional group is preferably at least one selected from an acryloyl group and a methacryloyl group.
  • the content of the functional group in the pressure-sensitive adhesive layer before irradiation with active energy rays is, for example, 0.1 to 1.2 mmol / g, and 0.3 to 1.0 mmol / g or 0.5 to 0.8 mmol / g. It may be g.
  • the content of the functional group is 0.1 mmol / g or more, it is easy to form a region (first region 3a) in which the adhesive strength is appropriately reduced by irradiation with active energy rays, while 1.2 mmol / g / g. When it is g or less, it is easy to achieve excellent pick-up property.
  • the (meth) acrylic resin can be obtained by synthesizing it by a known method.
  • the synthesis method include a solution polymerization method, a suspension polymerization method, an emulsion polymerization method, a massive polymerization method, a precipitation polymerization method, a vapor phase polymerization method, a plasma polymerization method, and a supercritical polymerization method.
  • the types of polymerization reactions include radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization, etc., as well as ATRP (atomic transfer radical polymerization) and RAFTP (Atomic transfer radical polymerization).
  • the monomer used when synthesizing the (meth) acrylic resin is not particularly limited as long as it has one (meth) acryloyl group in one molecule. Specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate, and isoamyl (meth) acrylate.
  • ⁇ -carboxy-polycaprolactone mono (meth) acrylate, glycidyl (meth) acrylate, ⁇ -ethylglycidyl (meth) acrylate, ⁇ -propyl glycidyl (meth) acrylate, ⁇ -butyl glycidyl (meth) acrylate, 2-methylglycidyl ( Meta) acrylate, 2-ethylglycidyl (meth) acrylate, 2-propylglycidyl (meth) acrylate, 3,4-epoxybutyl (meth) acrylate, 3,4-epoxyheptyl (meth) acrylate, ⁇ -ethyl-6, Ethylene unsaturated groups such as 7-epoxyheptyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, o-vinylbenzyl glycidyl ether
  • the (meth) acrylic resin preferably has at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group, and the like as a reaction point with a functional group-introducing compound or a cross-linking agent described later.
  • the monomer for synthesizing the (meth) acrylic resin having a hydroxyl group include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 3-chloro-2.
  • Examples thereof include compounds having an ethylenically unsaturated group and a hydroxyl group such as -hydroxypropyl (meth) acrylate and 2-hydroxybutyl (meth) acrylate, and these may be used alone or in combination of two or more. it can.
  • Examples of the monomer for synthesizing a (meth) acrylic resin having a glycidyl group include glycidyl (meth) acrylate, ⁇ -ethylglycidyl (meth) acrylate, ⁇ -propyl glycidyl (meth) acrylate, and ⁇ -butyl glycidyl (meth).
  • the (meth) acrylic resin synthesized from these monomers preferably contains a functional group capable of chain polymerization.
  • the chain-growthable functional group is, for example, at least one selected from an acryloyl group and a methacryloyl group.
  • the chain-growth-capable functional group is introduced into the (meth) acrylic resin, for example, by reacting the (meth) acrylic resin synthesized as described above with the following compound (functional group-introduced compound). be able to.
  • the functional group-introduced compound examples include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, methacryloylisocyanate, allylisocyanate, 1,1- (bisacryloyloxymethyl) ethyl isocyanate; diisocyanate compound.
  • an acryloyl monoisocyanate compound obtained by reacting a polyisocyanate compound with hydroxyethyl (meth) acrylate or 4-hydroxybutylethyl (meth) acrylate; a diisocyanate compound or polyisocyanate compound, a polyol compound, and hydroxyethyl (meth).
  • examples thereof include an acryloyl monoisocyanate compound obtained by reacting with acrylate.
  • 2-methacryloyloxyethyl isocyanate is particularly preferable. These compounds may be used alone or in combination of two or more.
  • the photopolymerization initiator is not particularly limited as long as it generates an active species capable of chain polymerization by irradiating it with active energy rays (at least one selected from ultraviolet rays, electron beams and visible light). Photoradical polymerization initiators can be mentioned.
  • the chain-growth-capable active species means one in which the polymerization reaction is initiated by reacting with a chain-polymerizable functional group.
  • photoradical polymerization initiator examples include benzoyl ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexylphenylketone and 2-hydroxy-2-methyl-1-phenylpropane-1.
  • ⁇ -hydroxyketones such as 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propane-1-one; 2-benzyl-2-dimethylamino-1-one ⁇ -Aminoketones such as (4-morpholinophenyl) -butane-1-one, 1,2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one; 1- [4 -(Phenylthio) phenyl] -1,2-octadion-2- (benzoyl) oxime and other oxime esters; bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2 , 4,4-trimethylpentylphosphenyl oxide, phosphine oxides such as 2,4,6-trimethylbenzoyldiphenylphosphenyl oxide; 2-
  • the content of the photopolymerization initiator in the pressure-sensitive adhesive composition is, for example, 0.1 to 30 parts by mass and 0.3 to 10 parts by mass with respect to 100 parts by mass of the content of the (meth) acrylic resin. It is preferably 0.5 to 5 parts by mass, and more preferably 0.5 to 5 parts by mass. If the content of the photopolymerization initiator is less than 0.1 parts by mass, the pressure-sensitive adhesive layer is insufficiently cured after irradiation with active energy rays, and pickup failure is likely to occur. If the content of the photopolymerization initiator exceeds 30 parts by mass, contamination of the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer) is likely to occur.
  • the cross-linking agent is used, for example, for the purpose of controlling the elastic modulus and / or the adhesiveness of the pressure-sensitive adhesive layer.
  • the cross-linking agent may be a compound having two or more functional groups in one molecule capable of reacting with at least one functional group selected from the hydroxyl group, glycidyl group, amino group and the like possessed by the (meth) acrylic resin.
  • Examples of the bond formed by the reaction between the cross-linking agent and the (meth) acrylic resin include an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, and a urea bond.
  • a compound having two or more isocyanate groups in one molecule as the cross-linking agent.
  • a compound having two or more isocyanate groups in one molecule it can easily react with the hydroxyl group, glycidyl group, amino group and the like contained in the (meth) acrylic resin to form a strong crosslinked structure.
  • Compounds having two or more isocyanate groups in one molecule include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, and diphenylmethane-4.
  • the above-mentioned isocyanate compound and a reaction product of a polyhydric alcohol having two or more OH groups in one molecule may be adopted.
  • polyhydric alcohols having two or more OH groups in one molecule include ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, and 1,9-nonanediol.
  • Examples thereof include 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerin, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol and 1,3-cyclohexanediol.
  • a cross-linking agent a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a reaction product of a polyhydric alcohol having three or more OH groups in one molecule (isocyanate group-containing oligomer) are used. It is even more desirable to have.
  • the pressure-sensitive adhesive layer 3 forms a dense cross-linked structure, which can sufficiently suppress the pressure-sensitive adhesive from adhering to the adhesive layer 5 in the pick-up step. ..
  • the content of the cross-linking agent in the pressure-sensitive adhesive composition may be appropriately set according to the cohesive force and the elongation at break required for the pressure-sensitive adhesive layer, the adhesion to the pressure-sensitive adhesive layer 5, and the like.
  • the content of the cross-linking agent is, for example, 3 to 30 parts by mass, preferably 4 to 15 parts by mass, and 7 to 7 to 3 parts by mass with respect to 100 parts by mass of the content of the (meth) acrylic resin. It is more preferably 10 parts by mass.
  • the content of the cross-linking agent is less than 3 parts by mass with respect to 100 parts by mass of the content of the (meth) acrylic resin, the formation of the cross-linked structure tends to be insufficient, and due to this, adhesion is performed in the pickup process.
  • the interfacial adhesion with the agent layer 5 is not sufficiently reduced, and defects are likely to occur during pickup.
  • the content of the cross-linking agent exceeds 30 parts by mass with respect to the content of 100 parts by mass of the (meth) acrylic resin, the pressure-sensitive adhesive layer 3 tends to become excessively hard, and due to this, in the expanding step.
  • the semiconductor chip is easy to peel off.
  • the content of the cross-linking agent with respect to the total mass of the pressure-sensitive adhesive composition is, for example, 0.1 to 20% by mass, and may be 3 to 17% by mass or 5 to 15% by mass.
  • the content of the cross-linking agent is 0.1% by mass or more, it is easy to form a region (first region 3a) in which the adhesive strength is appropriately reduced by irradiation with active energy rays, while the content is 15% by mass or less. By being there, it is easy to achieve excellent pick-up performance.
  • the thickness of the pressure-sensitive adhesive layer 3 may be appropriately set according to the conditions of the expanding step (temperature, tension, etc.), and is, for example, 1 to 200 ⁇ m, preferably 5 to 50 ⁇ m, and 10 to 20 ⁇ m. Is more preferable. If the thickness of the pressure-sensitive adhesive layer 3 is less than 1 ⁇ m, the adhesiveness tends to be insufficient, and if it exceeds 200 ⁇ m, the calf width becomes narrow during expansion (stress is relaxed when the pin is pushed up), and pickup tends to be insufficient. ..
  • the pressure-sensitive adhesive layer 3 is formed on the base material layer 1.
  • a method for forming the pressure-sensitive adhesive layer 3 a known method can be adopted.
  • a laminate of the base material layer 1 and the pressure-sensitive adhesive layer 3 may be formed by a two-layer extrusion method, or a varnish for forming the pressure-sensitive adhesive layer 3 may be prepared and applied to the surface of the base material layer 1.
  • the pressure-sensitive adhesive layer 3 may be formed on the film which has been processed or released and transferred to the base material layer 1.
  • the varnish for forming the pressure-sensitive adhesive layer 3 is preferably prepared by using an organic solvent capable of dissolving the (meth) acrylic resin, the photopolymerization initiator and the cross-linking agent, which volatilizes by heating.
  • organic solvent include aromatic hydrocarbons such as toluene, xylene, mesityrene, cumene, and p-simene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene.
  • Alcohols such as glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, ⁇ -butyrolactone, etc.
  • Carbonated esters such as ethylene carbonate and propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol Polyhydric alcohol alkyl ethers such as dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether; ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono Polyhydric alcohol alkyl ether acetates such as butyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monomethyl
  • toluene for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol mono Ethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N, N-dimethylacetamide are preferable.
  • organic solvents may be used alone or in combination of two or more.
  • the solid content concentration of the varnish is usually preferably 10 to 60% by mass.
  • base material layer As the base material layer 1, a known polymer sheet or film can be used, and there is no particular limitation as long as the expanding step can be carried out under low temperature conditions. Specifically, as the base material layer 1, crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, polymethylpentene, etc.
  • Polypropylene ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene- Hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyesters, polycarbonate, polyimide, polyether ether ketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyphenylsulfide, aramid (paper), glass , Glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, a mixture of these mixed with a plasticizer, or a cured product crosslinked by electron beam irradiation.
  • the base material layer 1 has a surface containing at least one resin selected from polyethylene, polypropylene, a polyethylene-polypropylene random copolymer, and a polyethylene-polypropylene block copolymer as a main component, and the surface and the pressure-sensitive adhesive layer 3 form a surface. It is preferable that they are in contact with each other. These resins are good base materials from the viewpoints of properties such as Young's modulus, stress relaxation property, melting point, price, waste material recycling after use, and the like.
  • the base material layer 1 may be a single layer, but may have a multilayer structure in which layers made of different materials are laminated, if necessary.
  • the surface of the base material layer 1 may be subjected to a surface roughness treatment such as a matte treatment or a corona treatment.
  • the adhesive composition constituting the adhesive layer 5 preferably contains an epoxy group-containing acrylic copolymer, an epoxy resin, and an epoxy resin curing agent. According to the adhesive layer 5 containing these components, the adhesiveness between chips / substrates and between chips / chips is excellent, electrode embedding property, wire embedding property, etc. can be imparted, and adhesion is performed at a low temperature in the die bonding process. It is preferable because it can be formed, excellent curing can be obtained in a short time, and it has excellent reliability after molding with a sealing agent.
  • epoxy resin examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, and the like.
  • Bisphenol A novolak type epoxy resin diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenols, diglycidyl etherified product of alcohols, and alkyl substituents and halides thereof.
  • Bifunctional epoxy resin such as hydrogen additive, Novorak type epoxy resin and the like.
  • epoxy resins such as a polyfunctional epoxy resin and a heterocycle-containing epoxy resin may be applied. These can be used alone or in combination of two or more.
  • a component other than the epoxy resin may be contained as an impurity as long as the characteristics are not impaired.
  • Examples of the epoxy resin curing agent include a phenol resin obtained by reacting a phenol compound with a xylylene compound which is a divalent linking group in the presence of a non-catalyst or an acid catalyst.
  • Examples of the phenolic compound used for producing the phenolic resin include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, on-propylphenol, mn-propylphenol, and the like.
  • phenol compounds may be used alone or in combination of two or more.
  • the xylylene compound which is a divalent linking group used in the production of a phenol resin the following xylylene halides, xylylene diglycols and derivatives thereof can be used.
  • mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid and polyphosphoric acid
  • organic substances such as dimethylsulfate, diethylsulfate, p-toluenesulfonic acid, methanesulfonic acid and ethanesulfonic acid.
  • Carboxy acids Super strong acids such as trifluoromethanesulfonic acid; Strongly acidic ion exchange resins such as alkane sulfonic acid type ion exchange resin; Super strong acidic ion exchange such as perfluoroalkane sulfonic acid type ion exchange resin Resins (trade names: Nafion, Nafion, manufactured by Du Pont, "Nafion” is a registered trademark); natural and synthetic zeolites; using acidic catalysts such as active white clay (acidic white clay), substantially at 50 to 250 ° C. It is obtained by reacting until the xylylene compound as a raw material disappears and the reaction composition becomes constant. The reaction time depends on the raw material and the reaction temperature, but is about 1 hour to 15 hours. Actually, the reaction composition may be determined by tracking the reaction composition by GPC (gel permeation chromatography) or the like.
  • GPC gel permeation chromatography
  • the epoxy group-containing acrylic copolymer is preferably a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by mass with respect to the obtained copolymer.
  • this amount is 0.5% by mass or more, high adhesive strength can be easily obtained, while when it is 6% by mass or less, gelation can be suppressed.
  • a mixture of alkyl acrylates having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate, alkyl methacrylate, and styrene and acrylonitrile can be used.
  • the mixing ratio is preferably adjusted in consideration of the Tg of the copolymer. If the Tg is less than ⁇ 10 ° C., the tackiness of the adhesive layer 5 in the B stage state tends to increase, and the handleability tends to deteriorate.
  • the upper limit of the glass transition point (Tg) of the epoxy group-containing acrylic copolymer is, for example, 30 ° C.
  • the polymerization method is not particularly limited, and examples thereof include pearl polymerization and solution polymerization. Examples of commercially available epoxy group-containing acrylic copolymers include HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation).
  • the weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and in this range, the adhesiveness and heat resistance are high, preferably 300,000 to 3 million, and preferably 500,000 to 2 million. Is more preferable. When the weight average molecular weight is 3 million or less, it is possible to suppress a decrease in the filling property between the semiconductor chip and the substrate supporting the semiconductor chip.
  • the weight average molecular weight is a polystyrene-equivalent value using a calibration curve made of standard polystyrene by gel permeation chromatography (GPC).
  • the adhesive layer 5 may further contain a curing accelerator such as a tertiary amine, imidazoles, or a quaternary ammonium salt, if necessary.
  • a curing accelerator such as a tertiary amine, imidazoles, or a quaternary ammonium salt
  • Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimerite. These may be used alone or in combination of two or more.
  • the adhesive layer 5 may further contain an inorganic filler, if necessary.
  • the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, and boron nitride. Examples include crystalline silica and amorphous silica. These may be used alone or in combination of two or more.
  • the thickness of the adhesive layer 5 is, for example, 1 to 300 ⁇ m, preferably 5 to 150 ⁇ m, and more preferably 10 to 100 ⁇ m. If the thickness of the adhesive layer 5 is less than 1 ⁇ m, the adhesiveness tends to be insufficient, while if it exceeds 300 ⁇ m, the splitting property and pick-up property at the time of expanding tend to be insufficient.
  • the adhesive layer 5 may not contain a thermosetting resin.
  • the adhesive layer 5 contains a reactive group-containing (meth) acrylic copolymer
  • the adhesive layer 5 contains a reactive group-containing (meth) acrylic copolymer, a curing accelerator, and a filler. Anything is fine.
  • the method for producing the film 10 is to form on the surface of the base material layer 1 a pressure-sensitive adhesive layer composed of a pressure-sensitive adhesive composition whose adhesive strength is reduced by irradiation with active energy rays, and on the surface of the pressure-sensitive adhesive layer.
  • the step of producing the laminated body including the adhesive layer 5 and the step of irradiating the region to be the first region 3a of the pressure-sensitive adhesive layer contained in the laminated body with active energy rays are included in this order.
  • the dose of the active energy ray to the area to be the first region 3a is, for example, 10 ⁇ 1000mJ / cm 2, may be 100 ⁇ 700mJ / cm 2 or 200 ⁇ 500mJ / cm 2.
  • the method for producing the film 10 includes a step of forming a pressure-sensitive adhesive layer made of a composition whose adhesive strength is reduced by irradiation with active energy rays on the surface of the base material layer 1, and a step of forming the pressure-sensitive adhesive layer.
  • the step of irradiating the region to be the region 3a of 1 with the active energy ray and the step of laminating the adhesive layer 5 on the surface of the adhesive layer 3 after irradiating the active energy ray are included in this order. It's okay.
  • FIG. 4 is a cross-sectional view schematically showing the semiconductor device according to the present embodiment.
  • the semiconductor device 100 shown in this figure includes a substrate 70, four chips S1, S2, S3, S4 laminated on the surface of the substrate 70, electrodes (not shown) on the surface of the substrate 70, and four chips S1. , S2, S3, S4 are electrically connected with wires W1, W2, W3, W4, and a sealing layer 50 for sealing them.
  • the substrate 70 is, for example, an organic substrate and may be a metal substrate such as a lead frame. From the viewpoint of suppressing the warp of the semiconductor device 100, the thickness of the substrate 70 is, for example, 70 to 140 ⁇ m, and may be 80 to 100 ⁇ m.
  • the four chips S1, S2, S3, and S4 are laminated via the cured product 5C of the adhesive piece 5P.
  • the shapes of the chips S1, S2, S3, and S4 in a plan view are, for example, a square or a rectangle.
  • the area of the chips S1, S2, S3, S4 is 30 to 250 mm 2 , and may be 40 to 200 mm 2 or 50 to 150 mm 2.
  • the length of one side of the chips S1, S2, S3, and S4 is, for example, 6.0 mm or more, and may be 7.0 to 18 mm or 8.0 to 15 mm.
  • the thickness of the chips S1, S2, S3, S4 is, for example, 10 to 150 ⁇ m, and may be 20 to 80 ⁇ m.
  • the length of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other, and the thickness is also the same. Further, the four chips S1, S2, S3, and S4 may be relatively small in size. That is, the area of the chips S1, S2, S3, S4 may be less than 30 mm 2 , and may be, for example, 0.1 to 20 mm 2 or 1 to 15 mm 2 .
  • the method for manufacturing the semiconductor device 100 includes the following steps.
  • (A) Step of preparing the film 10 (B) Step of stealth dying or half-cutting the wafer W with a blade (C) In the adhesive layer 5, the wafer W is placed in the region Rw corresponding to the first region. Step of sticking (D) By expanding the base material layer 1 under cooling conditions, the wafer W and the adhesive layer 5 are separated into pieces to obtain a chip 8 with an adhesive piece (E) Active in the adhesive layer 3.
  • Step of reducing the adhesive force of the adhesive layer 3 to the adhesive piece 8 by irradiating the chemical energy ray (F) The adhesive piece 8 is picked up from the adhesive layer 3 with the base material layer 1 expanded.
  • a protective film also referred to as BG tape
  • the wafer W is irradiated with a laser to form a plurality of scheduled cutting lines L (stealth dicing).
  • the wafer W is subjected to back grinding and polishing.
  • stealth dicing by laser is illustrated here, the wafer W may be half-cut by a blade instead.
  • Half-cutting means not cutting the wafer W, but forming a cut corresponding to the planned cutting line L of the wafer W.
  • the film 10 is attached so that the adhesive layer 5 is in contact with the back surface Wb of the wafer W. Further, the dicing ring DR is attached to the second region 3b of the pressure-sensitive adhesive layer 3. Then, the wafer W and the adhesive layer 5 are separated by cooling expansion under a temperature condition of 0 to -15 ° C. That is, as shown in FIG. 5B, tension is applied to the base material layer 1 by pushing up the inner region 1a of the dicing ring DR in the base material layer 1 with the ring Ra.
  • the wafer W is divided along the line L to be cut, and the adhesive layer 5 is divided into the adhesive pieces 5P accordingly, and the chips 8 with a plurality of adhesive pieces are formed on the surface of the adhesive layer 3. Is obtained.
  • the chip 8 with an adhesive piece is composed of a chip S and an adhesive piece 5P.
  • FIG. 6A is a cross-sectional view schematically showing how the inner region 1a is heated by blowing the heater H.
  • the adhesive strength of the pressure-sensitive adhesive layer 3 is reduced by irradiation with activation energy (for example, ultraviolet UV).
  • activation energy for example, ultraviolet UV
  • the dose of the active energy ray for the pressure-sensitive adhesive layer 3 is, for example, 10 ⁇ 1000mJ / cm 2, may be 100 ⁇ 700mJ / cm 2 or 200 ⁇ 500mJ / cm 2.
  • the adhesive piece-attached tip 8 is peeled off from the adhesive layer 3 by pushing up the adhesive piece-attached tip 8 with the push-up jig 42, and the adhesive piece-attached tip 8 is sucked into the collet 44. Suck and pick up.
  • the chip 8 with an adhesive piece is conveyed to an assembly device (not shown) of a semiconductor device and crimped to a circuit board or the like.
  • the first-stage chip S1 (chip S) is crimped to a predetermined position on the substrate 70 via the adhesive piece 5P.
  • the adhesive piece 5P is cured by heating.
  • the adhesive piece 5P is cured to become a cured product 5C.
  • the curing treatment of the adhesive piece 5P may be carried out in a pressurized atmosphere from the viewpoint of reducing voids.
  • the second-stage chip S2 is mounted on the surface of the chip S1 in the same manner as the mounting of the chip S1 on the substrate 70. Further, by mounting the third-stage and fourth-stage chips S3 and S4, the structure 60 shown in FIG. 7B is produced.
  • the semiconductor device shown in FIG. 4 is formed by electrically connecting the chips S1, S2, S3, S4 and the substrate 70 with wires W1, W2, W3, W4, and then sealing the semiconductor element and the wire with the sealing layer 50. 100 is completed.
  • the solution containing the acrylic resin (A) obtained as described above was vacuum dried at 60 ° C. overnight.
  • the solid content obtained by this was elementally analyzed by a fully automatic elemental analyzer (manufactured by Elemental Co., Ltd., trade name: varioEL), and the content of the introduced 2-methacryloyloxyethyl isocyanate was calculated from the nitrogen content. , 0.89 mmol / g.
  • the polystyrene-equivalent weight average molecular weight of (A) acrylic resin was determined using the following device. That is, SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation was used, Gelpack GL-A150-S / GL-A160-S manufactured by Hitachi Kasei Co., Ltd. was used for the column, and tetrahydrofuran was used as the eluent. GPC measurement was performed. As a result, the polystyrene-equivalent weight average molecular weight was 350,000.
  • a varnish for forming an adhesive layer was prepared by mixing the following components.
  • the pressure-sensitive adhesive layer formed by this varnish is cured by being irradiated with ultraviolet rays.
  • the amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish was 25% by mass.
  • a polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 ⁇ m) with a mold release treatment on one surface was prepared.
  • a varnish for forming an adhesive layer was applied to the peeled surface using an applicator, and then dried at 80 ° C. for 5 minutes.
  • a laminate (dicing film) composed of a polyethylene terephthalate film and an adhesive layer (thickness 10 ⁇ m) formed on the polyethylene terephthalate film was obtained.
  • a polyolefin film (width 450 mm, length 500 mm, thickness 100 ⁇ m) with corona treatment on one side was prepared.
  • the surface treated with corona and the pressure-sensitive adhesive layer of the laminated body were bonded together at room temperature.
  • the pressure-sensitive adhesive layer was transferred to the polyolefin film (cover film) by pressing with a rubber roll. Then, it was left at room temperature for 3 days to obtain a dicing film provided with an adhesive layer.
  • Cyclohexanone was added to the following components, and the mixture was stirred and mixed, and then kneaded for 90 minutes using a bead mill.
  • -Epoxy resin (YDCN-703 (trade name), manufactured by Nittetsu Chemical & Materials Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent 210, molecular weight 1200, softening point 80 ° C.): 55 parts by mass-Phenol resin (Millex XLC- LL (trade name), manufactured by Mitsui Chemicals, Inc., hydroxyl group equivalent 175, water absorption rate 1.8%, heating weight reduction rate at 350 ° C.
  • silane coupling agent 1 NUC A-189 (product name) Name), manufactured by Nippon Unicar Co., Ltd., ⁇ -mercaptopropyltrimethoxysilane
  • silane coupling agent 2 NUCA-1160 (trade name), manufactured by Nippon Unicar Co., Ltd., ⁇ -ureidopropyltriethoxy) Silane
  • Alignin R972 (trade name), manufactured by Nippon Aerosil Co., Ltd., silica, average particle size 0.016 ⁇ m): 32 parts by mass
  • “Aerosil R972” has an organic group (for example, a methyl group) on the surface.
  • the silica particles have dimethyldichlorosilane coated on the surface of the silica particles and hydrolyzed in a reactor at 400 ° C.
  • -Acrylic rubber (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, content of glycidyl acrylate or glycidyl methacrylate: 3% by mass, weight average molecular weight 800,000): 280 parts by mass-curing accelerator (curesol) 2PZ-CN (trade name), "Curesol” is a registered trademark, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole): 0.5 parts by mass
  • a polyethylene terephthalate film (thickness 35 ⁇ m) with a mold release treatment on one surface was prepared.
  • a varnish for forming an adhesive layer was applied to the surface to which the peeling treatment was performed, and then the surface was heat-dried at 140 ° C. for 5 minutes.
  • a laminate (die bonding film) composed of a polyethylene terephthalate film (carrier film) and an adhesive layer (thickness 10 ⁇ m) in a B stage state formed on the polyethylene terephthalate film was obtained.
  • the dicing / die bonding integrated film according to the present embodiment was obtained.
  • a plurality of dicing / die bonding integrated films were prepared for use in various evaluation tests described later.
  • Example 2 The irradiation amount of ultraviolet rays instead of the 20 mJ / cm 2, other that was 30 mJ / cm 2, the same procedure as in Example 1 to obtain a plurality of dicing die bonding integrated film.
  • Example 3 When preparing the varnish for forming the pressure-sensitive adhesive layer, a plurality of dicings were carried out in the same manner as in Example 2 except that the amount of the cross-linking agent was 0.45 parts by mass instead of 1.1 parts by mass. A die bonding integrated film was obtained.
  • the dicing / die bonding integrated film according to Examples 1 to 3 and Comparative Examples 1 and 2 has undergone a single ultraviolet irradiation.
  • the results are shown in Tables 1 and 2.
  • Comparative Examples 3 and 4 although ultraviolet rays were not irradiated in the process of the dicing / die bonding integrated film, the results are described in the column of "first ultraviolet irradiation" in Table 2 for convenience.
  • the silicon wafer after stealth dicing was polished to a thickness of 30 ⁇ m.
  • a grinding machine (DGP8761, manufactured by Disco Corporation) was used for polishing.
  • a dicing / die bonding integrated film was attached to the polished silicon wafer and dicing ring under the following conditions. Then, the BG tape was peeled off from the surface of the silicon wafer.
  • ⁇ Cooling expansion conditions > ⁇ Cooling temperature: -15 °C ⁇ Cooling time: 120 seconds ⁇ Push-up amount: 12 mm ⁇ Push-up speed: 200 mm / sec ⁇ Holding time after push-up: 3 seconds ⁇ Heat shrink condition> ⁇ Heater temperature: 220 °C ⁇ Heater rotation speed: 5 ° / sec ⁇ Push-up amount: 8 mm ⁇ Tape cooling waiting time: 10 seconds
  • the adhesive layer was irradiated with ultraviolet rays under the following conditions.
  • the pressure-sensitive adhesive layer was cured to reduce the adhesive force to the pressure-sensitive adhesive layer.
  • DAF skipping was evaluated according to the following criteria. A: No DAF skipping occurred. B: DAF skipping did not occur, but peeling or floating was observed at the interface between the adhesive layer and the adhesive layer. C: DAF skipping occurred at least in one place.
  • Chip edge peeling After cooling expansion and heat shrinking, the peeling of the adhesive layer and the adhesive layer at the edge of the chip with the adhesive piece was evaluated according to the following criteria. A: No peeling was observed at the edge portion. B: Peeling was observed at a length of 1 mm or more and less than 2 mm from the edge portion. C: Peeling of 2 mm or more and less than 3 mm was observed from the edge portion. D: Peeling of 3 mm or more was observed from the edge portion.
  • the distance (calf width) of the chips with the adhesive layer after the individualization was measured using a microscope.
  • the calf widths in the MD / TD direction were measured (18 points in total) at two locations on the outer periphery (up, down, left, and right) of the silicon wafer and at one location at the center, and the average value was calculated. Evaluation was made based on the following criteria.
  • B The average value of the calf width was 50 ⁇ m or more and less than 70 ⁇ m.
  • the film according to Examples 1 to 3 had good processability evaluation results.
  • the evaluation of the calf width was "S”.
  • the evaluation of the calf width was "A”, which was the same as that of Comparative Example 3, but the MD / TD balance was better than that of Comparative Example 3.
  • Calf width is one of the important items in the stealth dicing process from the viewpoint of achieving excellent pick-up property.
  • a dicing / die bonding integrated film and a method for manufacturing the same, which are convenient for the user and useful for efficiently manufacturing a semiconductor device. Further, according to the present disclosure, a method for manufacturing a semiconductor device using the dicing / die bonding integrated film is provided.
  • Base material layer 3 ... Adhesive layer, 3a ... First region, 3b ... Second region, 5 ... Adhesive layer, 8 ... Adhesive piece chip, 10 ... Dicing / die bonding integrated film, W ... Wafer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
PCT/JP2020/027885 2019-11-15 2020-07-17 半導体装置の製造方法、並びにダイシング・ダイボンディング一体型フィルム及びその製造方法 WO2021095302A1 (ja)

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CN202080078717.1A CN114730706A (zh) 2019-11-15 2020-07-17 半导体装置的制造方法、以及切割晶粒接合一体型膜及其制造方法

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WO2023048188A1 (ja) * 2021-09-27 2023-03-30 株式会社レゾナック フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法
WO2023157195A1 (ja) * 2022-02-17 2023-08-24 株式会社レゾナック ダイシングダイボンディングフィルム、及び、半導体装置を製造する方法

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DE112022004060T5 (de) 2022-04-27 2024-08-01 Yamaha Hatsudoki Kabushiki Kaisha Aufweitungsvorrichtung, Verfahren zur Herstellung von Halbleiterchips und Halbleiterchip
CN117410242A (zh) * 2022-07-08 2024-01-16 长鑫存储技术有限公司 半导体封装组件及制备方法

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