WO2021093409A1 - 滤波器 - Google Patents

滤波器 Download PDF

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Publication number
WO2021093409A1
WO2021093409A1 PCT/CN2020/111352 CN2020111352W WO2021093409A1 WO 2021093409 A1 WO2021093409 A1 WO 2021093409A1 CN 2020111352 W CN2020111352 W CN 2020111352W WO 2021093409 A1 WO2021093409 A1 WO 2021093409A1
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resonator
group
series
length
different
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PCT/CN2020/111352
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English (en)
French (fr)
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庞慰
郑云卓
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天津大学
诺思(天津)微系统有限责任公司
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Publication of WO2021093409A1 publication Critical patent/WO2021093409A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator

Definitions

  • the present application relates to the technical field of filter-type devices for communication. Specifically, the present application relates to a filter.
  • the small size filters that can meet the use of communication terminals are mainly piezoelectric acoustic wave filters.
  • the resonators that constitute this type of acoustic wave filter mainly include: Film Bulk Acoustic Resonator (FBAR), solid-state assembly resonator (Solidly Mounted Resonator, SMR) and Surface Acoustic Wave (SAW).
  • FBAR and SMR filters manufactured based on the principle of bulk acoustic waves have a higher Q value than SAW filters manufactured based on the principle of surface acoustic waves.
  • the improvement of the modulation mode also puts forward higher requirements on the performance of the communication channel, and the channel quality is not high, which will directly affect the EVM characteristics, thereby degrading the data transmission rate.
  • the filter fluctuations in group delay will affect the data transmission rate.
  • the present invention proposes a filter to solve the technical problem of poor group delay fluctuation of the filter in the prior art.
  • a filter includes a series part and a parallel part.
  • the series part includes a plurality of series resonant units connected in series; at least one of the plurality of series resonant units connected in series is a specific series resonant unit.
  • the resonant unit includes a first resonator group and a second resonator group connected in series, and the resonant frequencies of the first resonator group and the second resonator group are different.
  • the resonant frequencies of the first resonator group and the second resonator group differ by 0.2 ⁇ to 5 ⁇ of the average resonant frequency.
  • both the first resonator group and the second resonator group include at least one resonator, and the area of the resonator of the first resonator group is equal to that of the resonator of the second resonator group.
  • the area is different, so that the distribution of the lateral resonance burr in the response curve of the first resonator group and the second resonator group is different.
  • the specific series resonant unit includes a first resonator, a second resonator, a third resonator, and a fourth resonator in series
  • the first resonator group includes the first resonator and the fourth resonator.
  • the second resonator, the second resonator group includes the third resonator and the fourth resonator; wherein the area of the first resonator and the second resonator are the same, and the third resonator The area of the resonator and the fourth resonator are the same, and the area of the first resonator and the third resonator are different.
  • the specific series resonant unit includes a first resonator, a second resonator, and a third resonator in series
  • the first resonator group includes the first resonator and the third resonator
  • the second resonator group includes the second resonator; wherein the areas of the first resonator and the third resonator are the same, and the areas of the first resonator and the second resonator are different .
  • the specific series resonant unit includes a first resonator, a second resonator, a third resonator, and a fourth resonator in series
  • the first resonator group includes the first resonator and the fourth resonator.
  • the third resonator, the second resonator group includes the second resonator and the fourth resonator; wherein the area of the first resonator and the third resonator are the same, and the second resonator The area of the resonator and the fourth resonator are the same, and the area of the first resonator and the second resonator are different.
  • the specific series resonant unit includes a first resonator, a second resonator, a third resonator, and a fourth resonator connected in series in sequence
  • the first resonator group includes the first resonator
  • the second resonator group includes the fourth resonator; wherein the first resonator, the second resonator and the third resonator are The area is the same, and the area of the first resonator and the area of the fourth resonator are different.
  • the shape of the resonators of the first resonator group is a first shape
  • the shape of the resonators of the second resonator group is a second shape
  • the first shape is different from the second shape
  • the first resonator group includes a first resonator and a second resonator, the first resonator has a first input side and a first connection side, and the second resonator has a first output side And a second connection side, the second resonator group includes a third resonator and a fourth resonator, the third resonator has a second input side and a third connection side, and the fourth resonator has a second The output side and the fourth connection side, the first connection side is connected to the second connection side, and the third connection side is connected to the fourth connection side; wherein the length of the first connection side is the same as that of the fourth connection side.
  • the length of the second connecting side is the same, the length of the first input side is different from the length of the first connecting side, the length of the first output side is different from the length of the first connecting side, the first The length of the three connecting sides is the same as the length of the fourth connecting side, the length of the second input side is different from the length of the third connecting side, and the length of the second output side is the same as that of the third connecting side. The length is different.
  • the first resonator group includes a first resonator and a third resonator, the first resonator has an input side and a first connection side, and the third resonator has an output side and a second connection Side
  • the second resonator group includes a second resonator, the second resonator has a third connection side and a fourth connection side, the first connection side is connected to the third connection side, the first The two connecting sides are connected to the fourth connecting side; wherein the length of the first connecting side, the length of the second connecting side, the length of the third connecting side and the length of the fourth connecting side are all Same, the length of the input side is different from the length of the first connecting side, and the length of the output side is different from the length of the first connecting side.
  • the parallel part includes a first parallel resonator and the second parallel resonator; the first parallel resonator is connected between the first series resonant unit and the second series resonant unit, The second parallel resonator is connected between the second series resonant unit and the third series resonant unit.
  • the resonator is a thin-film bulk acoustic wave resonator or a solid-state assembly resonator.
  • the impedance transverse resonant modes of the two resonator groups with different resonant frequencies are also different. Therefore, the two The resonator groups with different resonant frequencies compensate each other for the spikes and recesses of the impedance burr, which can improve the smoothness of the filter response curve, thereby improving the group delay fluctuation characteristics.
  • Figure 1 is a typical characteristic curve of an FBAR resonator with a resonance frequency around 2.6 GHz in the prior art
  • Figure 2 is a curve of the real part of the impedance of a series resonator in the prior art
  • FIG. 3 is a schematic structural diagram of a filter provided by an embodiment of the application.
  • FIG. 4 is a circuit diagram of a filter provided by an embodiment of the application.
  • Fig. 5 is a group delay characteristic curve of the filter shown in Fig. 4 and a comparative design in the prior art
  • FIG. 6 is a circuit diagram of another filter provided by an embodiment of the application.
  • FIG. 7 is a circuit diagram of another filter provided by an embodiment of the application.
  • FIG. 8 is a circuit diagram of still another filter provided by an embodiment of this application.
  • Figure 9 is a schematic diagram of the impedance correspondence between series resonators (resonant frequency is Fs, anti-resonant frequency is Fp) and parallel resonators (resonant frequency is Fs’, anti-resonant frequency is Fp’) in a typical ladder filter;
  • FIG. 10 is a schematic diagram of the layout design of the resonator obtained after the second series resonant unit in the filter shown in FIG. 4 is split;
  • FIG. 11 is a curve of the real part of impedance of two resonator groups in the second series resonant unit of the filter shown in FIG. 4;
  • FIG. 12 is a schematic diagram of the layout design of the resonator obtained after the second series resonant unit in the filter shown in FIG. 6 is split.
  • the characteristic curve of an FBAR resonator with a resonance frequency around 2.6GHz and a straight line with the imaginary part of the horizontal position equal to 0 in the Smith chart have two intersections respectively, which are located in the circle.
  • the one on the left is the resonant frequency (Fs) of the resonator, and the one on the right of the diagram is the anti-resonant frequency (Fp) of the resonator.
  • Fs resonant frequency
  • Fp anti-resonant frequency
  • the resonant frequency Fs of the series resonator group is 2605MHz, which is about 80MHz below Fs. Because of the acoustic energy and lateral leakage of the FBAR resonator, the impedance curve is in this There are more glitches or jitters in the area, so that the group delay characteristics of the filter deteriorate and the efficiency of terminal data transmission is reduced.
  • the filter provided in this application aims to solve the above technical problems in the prior art.
  • the filter provided in this embodiment includes a series part I and a parallel part II.
  • the series part I includes three series resonant units connected in series in sequence.
  • the series resonant unit in series includes a specific series resonant unit, and the specific resonant unit includes a first resonator group 21 and a second resonator group 22 connected in series, and the resonant frequencies of the first resonator group 21 and the second resonator group 22 are different.
  • the series part I includes three series resonant units connected in series as an example for description. In implementation, the technical solution of the present application can be applied to the case where the series part includes multiple series resonant units.
  • the three series resonant units connected in series are the first series resonant unit 1, the second series resonant unit 2 and the third series resonant unit 3 respectively.
  • the second series resonant unit The unit 2 is a specific resonant unit, that is, the second series resonant unit 2 includes a first resonator group 21 and a second resonator group 22 that are connected in series and have different resonant frequencies.
  • series part I may include a greater number of series resonant units, and the specific series resonant unit may be any one or more series resonant units of the series part I.
  • the impedance transverse resonant modes of the two resonator groups with different resonant frequencies are also different, so The two resonator groups with different resonant frequencies compensate each other for the spikes and recesses of the impedance burr, which can improve the smoothness of the filter response curve, thereby improving the group delay fluctuation characteristics.
  • the second series resonant unit 2 is used as a specific series resonant unit as an example for description.
  • the resonant frequencies of the first resonator group 21 and the second resonator group 22 differ by 0.2 ⁇ to 5 ⁇ of the average resonant frequency.
  • the average resonant frequency is the average value of the resonant frequencies of all series resonators (about 2605MHz), and the average value of 0.2 ⁇ to 5 ⁇ is 0.52MHz to 13MHz.
  • the impedance burrs below the resonant frequency of the first resonator group 21 and the second resonator group 22 can compensate each other to a certain extent
  • the first resonator group 21 and the second resonator group 22 each include at least one resonator, the area of the resonator of the first resonator group 21 and the resonance of the second resonator group 22 The area of the resonator is different, so that the distribution of the lateral resonance burr in the response curve of the first resonator group 21 and the second resonator group 22 is different.
  • the resonant frequencies of the first resonator group 21 and the second resonator group 22 can be designed, In this way, the distribution of the transverse resonance burr in the response curves of the first resonator group 21 and the second resonator group 22 is different, and the group delay fluctuation characteristic of the filter is improved.
  • the second series resonant unit 2 (specific series resonant unit) includes a first resonator S21, a second resonator S22, a third resonator S23, and a fourth resonator S24 connected in series in sequence.
  • the first resonator group 21 includes a first resonator S21 and a second resonator S22
  • the second resonator group 22 includes a third resonator S23 and a fourth resonator S24; wherein the area of the first resonator S21 and the second resonator S22 are the same, The areas of the third resonator S23 and the fourth resonator S24 are the same, and the areas of the first resonator S21 and the third resonator S24 are different.
  • the resonant frequencies of the resonators in the first resonator group and the second resonator group are different. It is seen that the glitch of the group delay has been improved, which helps to improve the group delay characteristics of the filter.
  • the second series resonant unit 2 (specific series resonant unit) of the filter includes a first resonator S21, a second resonator S22, and a third Resonator S23
  • the first resonator group 21 includes a first resonator S21 and a third resonator S23
  • the second resonator group 22 includes a second resonator S22; wherein the first resonator S21 and the third resonator S23 are The areas are the same, and the areas of the first resonator S21 and the second resonator S22 are different.
  • the second series resonant unit 2 (specific series resonant unit) of the filter includes a first resonator S21, a second resonator S22, and a third resonator S21, a second resonator S22, and a
  • the second series resonant unit 2 (specific series resonant unit) of the filter includes a first resonator S21, a second resonator S22, and a third resonator S21, a second resonator S22, and a
  • the areas of the first resonator S21, the second resonator S22, and the third resonator S23 are the same, and the areas of the first resonator S21 and the fourth resonator S24 are different.
  • the Fs of the series resonator (the resonator in the series resonant unit) is basically equivalent to the Fp' of the parallel resonator (the resonator in the parallel resonator unit), so that the filter is formed according to the impedance ratio.
  • the area shown in Figure 9 is the passband frequency range of the filter, that is, the area where the group delay characteristic is concerned. Since the transverse resonance only exists in a frequency below Fs, it can be seen from Figure 9 that there is only a series resonator The transverse resonant glitch will be located in the passband of the filter.
  • the first series resonant unit includes two resonators with different resonant frequencies, or/and the third series resonant unit includes two resonators with different resonant frequencies.
  • the first series resonator unit 1 includes a fifth resonator S11 and a sixth resonator S12, and the resonant frequencies of the fifth resonator S11 and the sixth resonator S12 are different.
  • the third series resonant unit 3 includes a seventh resonator S31 and an eighth resonator S32, and the resonant frequencies of the seventh resonator S31 and the eighth resonator S32 are different.
  • the fifth resonator S11 and the sixth resonator S12 can have different resonant frequencies by designing the fifth resonator S11 and the sixth resonator S12 as resonators with different areas;
  • the eight resonator S32 is designed as a resonator with a different area to make the resonant frequencies of the seventh resonator S31 and the eighth resonator S32 different.
  • the parallel part II of the filter in the embodiment of the present application includes a first parallel resonator P1 and a second parallel resonator P2; the first parallel resonator P1 is connected between the first series resonant unit 1 and the second series resonant unit 2, and the second parallel resonator P2 is connected between the second series resonant unit 2 and the third series resonant unit 3 .
  • the input terminal of the first series resonance unit 1, the output terminal of the third series resonance unit 3, the ground terminal of the first parallel resonator P1, and the ground terminal of the second parallel resonator P2 are all connected to an inductor.
  • the resonators in this application are all thin-film bulk acoustic resonators or solid-state assembly resonators.
  • the thin film bulk acoustic wave resonator FBAR and solid-state assembly resonator SMR manufactured based on the principle of bulk acoustic wave have a higher Q value than the surface acoustic wave resonator SAW manufactured based on the principle of surface acoustic wave. Therefore, the use of thin-film bulk acoustic resonators or solid-state assembly resonators can further improve the performance of the filter, so as to improve the performance of the communication channel, thereby increasing the communication rate.
  • the shape of the resonator of the first resonator group is a first shape
  • the shape of the resonator of the second resonator group is a second shape
  • the first shape is different from the second shape .
  • the transverse resonance mode of the FBAR resonator depends on the formation of the transverse resonant standing wave of the shape, and mutually parallel sides (such as a four-sided rectangle or a parallelogram) will cause this kind of transverse resonance to be very easy to form, therefore, it is generally Set FBAR to a polygon with 5 sides or more, and try not to make the sides parallel to each other.
  • the resonator is designed as a rectangle with an aspect ratio of approximately 2:1, and the input side (and/or output side) of the resonator in the second series resonant unit is connected to the connecting side of the other resonator The length is different, which can reduce the transverse resonance of the filter.
  • the layout of the resonator obtained by splitting the second series resonant unit (specific series resonant unit) in the filter shown in FIG. 4 is shown in FIG. 10
  • the first resonator group 21 includes a first resonator S21 and a second resonator S22, and the first resonator S21 has a first input side A and a first connection.
  • the second resonator S22 has a first output side D and a second connection side C
  • the second resonator group 22 includes a third resonator S23 and a fourth resonator S24
  • the third resonator S23 has a second input side E and the third connection side F
  • the fourth resonator S24 has a second output side H and a fourth connection side G
  • the first connection side B is connected to the second connection side C
  • the third connection side F is connected to the fourth connection side G Connected;
  • the length of the first connecting side B is the same as the length of the second connecting side C
  • the length of the first input side A is different from the length of the first connecting side B
  • the length of the first output side D is the same as that of the first connecting side
  • the length of B is different
  • the length of the third connecting side F is the same as the length of the fourth connecting side G
  • the length of the second input side E is different from the length of the third connecting side F
  • the layout is designed, for the same resonator group (the first resonator group 21 or the second resonator group 22), its signal input side or output side, and the internal connection side of the same resonator group, are in the same resonator group (the first resonator group 21 or the second resonator group 22).
  • the short side enters, and the long side is connected between them.
  • the output is short-side, and they are also connected with the long-side.
  • the second series resonant unit is designed as two resonator groups with different areas and different frequencies, so that their impedances compensate each other in frequency, and at least one resonator group is split by equal area and then disassembled.
  • the first resonator may be a second resonator S21 and S22 is the area to 5110um2
  • the area S23 of the third resonator and the fourth resonator S24 is set to 5005um 2, a difference of about 2%.
  • the two resonator groups compensate for each other in the spikes and recesses of the impedance burr, which can improve the filter
  • the smoothness of the response curve improves the group delay fluctuation characteristics.
  • the first resonator group 21 includes a first resonator S21 and a third resonator S23.
  • the first resonator S21 has an input side A and a first connection side B.
  • the third resonator S23 It has an output side F and a second connection side E.
  • the second resonator group 22 includes a second resonator S22.
  • the second resonator S22 has a third connection side C and a fourth connection side D.
  • the first connection side B and the third The connecting edge C is connected, and the second connecting edge E is connected to the fourth connecting edge D; among them, the length of the first connecting edge B, the length of the second connecting edge C, the length of the third connecting edge D and the fourth connecting edge E
  • the lengths are the same, the length of the input side A is different from the length of the first connecting side B, and the length of the output side F is different from the length of the first connecting side B. That is, the resonators of the first resonator group are divided into equal areas so that the lengths of the signal input side and output side are different, and the impedance transverse resonance modes are also different. Therefore, the two are in the peak and the impedance burr.
  • the recessed parts make up for each other, which can improve the smoothness of the filter response curve, thereby improving the group delay fluctuation characteristics.
  • the impedance transverse resonant modes of the two resonator groups with different resonant frequencies are different, so that The two resonator groups with different resonant frequencies compensate each other for the spikes and recesses of the impedance burr, which can improve the smoothness of the filter response curve, thereby improving the group delay fluctuation characteristics.

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Abstract

本申请提供了一种滤波器，该滤波器包括串联部分和并联部分，串联部分包括多个依次串联的串联谐振单元，其中，所述多个依次串联的串联谐振单元其中至少之一为特定串联谐振单元，特定串联谐振单元包括串联的第一谐振器组和第二谐振器组，第一谐振器组和第二谐振器组的谐振频率不同。本申请提供的滤波器，通过将第二串联谐振单元设置为两个谐振频率不同的谐振器组，这两个谐振频率不同的谐振器组的阻抗横向谐振模式也不相同，因此，这两个谐振频率不同的谐振器组在阻抗毛刺的尖峰和凹陷部分相互弥补，能够提升滤波器响应曲线的平滑度，从而改善群时延波动特性。

Description

滤波器 技术领域
本申请涉及通信用滤波类器件技术领域，具体而言，本申请涉及一种滤波器。
背景技术
近年来，随着市场的迅猛发展，无线通讯终端和设备不断朝着小型化、多模-多频段的方向发展，对滤波器性能的要求也越来越高，主要体现在更低的插入损耗，更高的带外抑制及陡降。目前，能够满足通讯终端使用的小尺寸滤波器主要是压电声波滤波器，构成此类声波滤波器的谐振器主要包括：薄膜体声波谐振器(Film Bulk Acoustic Resonator，FBAR)、固态装配谐振器(Solidly Mounted Resonator，SMR)和表面声波谐振器(Surface Acoustic Wave，SAW)。其中基于体声波原理制造的FBAR和SMR滤波器，相比基于表面声波原理制造的SAW滤波器，具有更高的Q值。
通讯终端发展的另一个重要趋势是更高的数据传输量，无论是基于WLAN协议的Wi-Fi通信，还是基于3GPP协议的LTE通信，数据传输量相比3G时代已经有了指数级的飞跃。提高数据传输量的途径主要有两种：一是通过载波聚合实现信道的扩展，但是这需要对终端硬件及软件设计做较大的升级改动，且实现的带宽扩展最多为2-3倍。二是通过提高调制解调效率，从早期的BPSK，QPSK调试，到大数据传输量的16-QAM，64-QAM，甚至256-QAM，数据传输速率理论上最大可以得到上百倍的提升。
但是，调制模式的提高，对通信信道的性能也提出了更高的要求，信道质量不高，将直接影响EVM特性，从而使数据传输速率退化。对于滤波器来说，群时延波动会影响数据的传输速率。
发明内容
有鉴于此，本发明提出一种滤波器，用以解决现有技术存在的滤波器的群时延波动较差的技术问题。
为实现上述目的，本发明提供如下技术方案：
一种滤波器，包括串联部分和并联部分，所述串联部分包括多个依次串联的串联谐振单元；所述多个依次串联的串联谐振单元其中至少之一为特定串联谐振单元，所述特定串联谐振单元包括串联的第一谐振器组和第二谐振器组，所述第一谐振器组和所述第二谐振器组的谐振频率不同。
可选地，所述第一谐振器组和所述第二谐振器组的谐振频率相差平均谐振频率的0.2‰～5‰。
可选地，所述第一谐振器组和所述第二谐振器组均包括至少一个谐振器，所述第一谐振器组的谐振器的面积与所述第二谐振器组的谐振器的面积不同，以使所述第一谐振器组和所述第二谐振器组的响应曲线中横向谐振毛刺的分布不同。
可选地，所述特定串联谐振单元包括依次串联的第一谐振器、第二谐振器、第三谐振器和第四谐振器，所述第一谐振器组包括所述第一谐振器和所述第二谐振器，所述第二谐振器组包括所述第三谐振器和所述第四谐振器；其中所述第一谐振器与所述第二谐振器的面积相同，所述第三谐振器和所述第四谐振器的面积相同，所述第一谐振器和所述第三谐振器的面积不同。
可选地，所述特定串联谐振单元包括依次串联的第一谐振器、第二谐振器和第三谐振器，所述第一谐振器组包括所述第一谐振器和所述第三谐振器，所述第二谐振器组包括所述第二谐振器；其中所述第一谐振器与所 述第三谐振器的面积相同，所述第一谐振器和所述第二谐振器的面积不同。
可选地，所述特定串联谐振单元包括依次串联的第一谐振器、第二谐振器、第三谐振器和第四谐振器，所述第一谐振器组包括所述第一谐振器和所述第三谐振器，所述第二谐振器组包括所述第二谐振器和所述第四谐振器；其中所述第一谐振器与所述第三谐振器的面积相同，所述第二谐振器和所述第四谐振器的面积相同，所述第一谐振器和所述第二谐振器的面积不同。
可选地，所述特定串联谐振单元包括依次串联的第一谐振器、第二谐振器、第三谐振器和第四谐振器，所述第一谐振器组包括所述第一谐振器、所述第二谐振器和所述第三谐振器，所述第二谐振器组包括所述第四谐振器；其中所述第一谐振器、所述第二谐振器和所述第三谐振器的面积相同，所述第一谐振器和所述第四谐振器的面积不同。
可选地，所述第一谐振器组的谐振器的形状为第一形状，所述第二谐振器组的谐振器的形状为第二形状，所述第一形状与所述第二形状不同。
可选地，所述第一谐振器组包括第一谐振器和第二谐振器，所述第一谐振器具有第一输入边和第一连接边，所述第二谐振器具有第一输出边和第二连接边，所述第二谐振器组包括第三谐振器和第四谐振器，所述第三谐振器具有第二输入边和第三连接边，所述第四谐振器具有第二输出边和第四连接边，所述第一连接边与所述第二连接边相连，所述第三连接边与所述第四连接边相连；其中，所述第一连接边的长度与所述第二连接边的长度相同，所述第一输入边的长度与所述第一连接边的长度不同，所述第一输出边的长度与所述第一连接边的长度不同，所述第三连接边的长度与所述第四连接边的长度相同，所述第二输入边的长度与所述第三连接边的长度不同，所述第二输出边的长度与所述第三连接边的长度不同。
可选地，所述第一谐振器组包括第一谐振器和第三谐振器，所述第一谐振器具有输入边和第一连接边，所述第三谐振器具有输出边和第二连接边，所述第二谐振器组包括第二谐振器，所述第二谐振器具有第三连接边和第四连接边，所述第一连接边与所述第三连接边相连，所述第二连接边与所述第四连接边相连；其中，所述第一连接边的长度、所述第二连接边的长度、所述第三连接边的长度以及所述第四连接边的长度均相同，所述输入边的长度与所述第一连接边的长度不同，所述输出边的长度与所述第一连接边的长度不同。
可选地，所述并联部分包括第一并联谐振器和所述第二并联谐振器；所述第一并联谐振器连接在所述第一串联谐振单元和所述第二串联谐振单元之间，所述第二并联谐振器连接在所述第二串联谐振单元和所述第三串联谐振单元之间。
可选地，所述谐振器为薄膜体声波谐振器或固态装配谐振器。
根据本发明的技术方案，通过将第二串联谐振单元设置为两个谐振频率不同的谐振器组，这两个谐振频率不同的谐振器组的阻抗横向谐振模式也不相同，因此，这两个谐振频率不同的谐振器组在阻抗毛刺的尖峰和凹陷部分相互弥补，能够提升滤波器响应曲线的平滑度，从而改善群时延波动特性。
本申请附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为现有技术中一个谐振频点在2.6GHz附近的FBAR谐振器的典型特性曲线；
图2为现有技术中的一种串联谐振器阻抗实部的曲线；
图3为本申请实施例提供的一种滤波器的结构示意图；
图4为本申请实施例提供的一种滤波器的电路图；
图5为图4所示的滤波器与现有技术中作为对照设计的群时延特性曲线；
图6为本申请实施例提供的另一种滤波器的电路图；
图7为本申请实施例提供的又一种滤波器的电路图；
图8为本申请实施例提供的再一种滤波器的电路图；
图9为典型梯型滤波器中串联谐振器(谐振频率为Fs，反谐振频率为Fp)与并联谐振器(谐振频率为Fs’，反谐振频率为Fp’)的阻抗对应关系示意图；
图10为图4所示的滤波器中第二串联谐振单元拆分后得到的谐振器的版图设计示意图；
图11为图4所示的滤波器中第二串联谐振单元中两个谐振器组的阻抗实部曲线；
图12为图6所示的滤波器中第二串联谐振单元拆分后得到的谐振器的版图设计示意图。
具体实施方式
下面详细描述本申请，本申请的实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的部件或具有相同或类似功能的部件。此外，如果已知技术的详细描述对于示出的本申请的特征是不必要的，则将其省略。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能解释为对本申请的限制。
如图1所示，在现有技术中，谐振频点在2.6GHz附近的FBAR谐振器的特性曲线与史密斯圆图中的水平位置的虚部等于0的直线分别有两个交点，位于圆图左侧的为谐振器的谐振频率(Fs)，位圆图右侧的为谐 振器的反谐振频率(Fp)。在Fs以下的部分，因为FBAR谐振器的声学能量场的横向泄漏，导致在一段频率范围内存在幅值不同的横向谐振，表现为谐振器曲线出现很多圆圈状的抖动。
如图2所示，现有技术中，串联谐振器组中，其谐振频率Fs为2605MHz，在Fs以下约80MHz的范围，因为FBAR谐振器的声学能量声和横向泄漏，导致阻抗曲线在这一区域存在较多的毛刺或抖动，从而使滤波器的群时延特性变差，降低终端数据传输的效率。
因此，在不牺牲滤波器其它电学特性的基础上，如何改善因横向谐振引起的群时延特性恶化，成为滤波器设计工程师亟待解决的一个问题。
本申请提供的滤波器，旨在解决现有技术的如上技术问题。
下面以具体地实施例对本申请的技术方案以及本申请的技术方案如何解决上述技术问题进行详细说明。
本申请实施例提供了一种滤波器，如图3所示，本实施例提供的滤波器包括串联部分I和并联部分II，串联部分I包括依次串联的三个串联谐振单元，这三个依次串联的串联谐振单元包括特定串联谐振单元，特定谐振单元包括串联的第一谐振器组21和第二谐振器组22，第一谐振器组21和第二谐振器组22的谐振频率不同。图3以及下文中，以串联部分I包括依次串联的三个串联谐振单元为例进行说明，在实现中本申请技术方案可应用于串联部分包含多个串联谐振单元的情形。
具体地，这三个依次串联的串联谐振单元分别为第一串联谐振单元1、第二串联谐振单元2和第三串联谐振单元3，以图3所示的滤波器为例，第二串联谐振单元2为特定谐振单元，即第二串联谐振单元2包括串联且谐振频率不同的第一谐振器组21和第二谐振器组22。
需要说明的是，串联部分I可以包括更多数量的串联谐振单元，并且，特定串联谐振单元可为串联部分I的任意一个或多个串联谐振单元。
根据上述的滤波器，通过将串联谐振单元中的任意一个或几个设置为两个谐振频率不同的谐振器组，这两个谐振频率不同的谐振器组的阻抗横向谐振模式也不相同，因此，这两个谐振频率不同的谐振器组在阻抗毛刺的尖峰和凹陷部分相互弥补，能够提升滤波器响应曲线的平滑度，从而改 善群时延波动特性。
在下述实施例中，如无特殊声明，均以第二串联谐振单元2作为特定串联谐振单元为例进行描述。
请继续参见图3，优选地，第一谐振器组21和第二谐振器组22的谐振频率相差平均谐振频率的0.2‰～5‰。平均谐振频率为所有串联谐振器的谐振频率平均值(约2605MHz)，该平均值的0.2‰～5‰为0.52MHz～13MHz。当第一谐振器组21和第二谐振器组22的谐振频率相差0.52MHz～13MHz时，第一谐振器组21和第二谐振器组22谐振频率以下的阻抗毛刺可以在一定程度上相互弥补，对于本例，优选地设定两组谐振器的谐振频率相差2MHz。在该谐振频率差下，第一谐振器组21和第二谐振器组22在阻抗毛刺的尖峰和凹陷部分相互弥补效果良好，能够显著提升滤波器响应曲线的平滑度，从而改善群时延波动特性。
可选地，请继续参见图3，第一谐振器组21和第二谐振器组22均包括至少一个谐振器，第一谐振器组21的谐振器的面积与第二谐振器组22的谐振器的面积不同，以使第一谐振器组21和第二谐振器组22的响应曲线中横向谐振毛刺的分布不同。通过对第一谐振器组21的谐振器的面积、以及第二谐振器组22的谐振器的面积进行设计，能够对第一谐振器组21和第二谐振器组22的谐振频率进行设计，从而实现第一谐振器组21和第二谐振器组22的响应曲线中横向谐振毛刺的分布不同，进而改善滤波器的群时延波动特性。
在下述实施例中，将结合具体的电路图对滤波器的特定串联谐振单元进行详细说明。
请参见图4，第二串联谐振单元2(特定串联谐振单元)包括依次串联的第一谐振器S21、第二谐振器S22、第三谐振器S23和第四谐振器S24，第一谐振器组21包括第一谐振器S21和第二谐振器S22，第二谐振器组22包括第三谐振器S23和第四谐振器S24；其中，第一谐振器S21与第二谐振器S22的面积相同，第三谐振器S23和第四谐振器S24的面积相同，第一谐振器S21和第三谐振器S24的面积不同。
请参见图5，由于第一谐振器组和第二谐振器组中的谐振器的面积不同，使得第一谐振器组和第二谐振器组中的谐振器的谐振频率不同，由图5可以看到群时延的毛刺得到了改善，这有助于提升滤波器的群时延特性。
请参见图6，本实施例提供了另一种滤波器，该滤波器的第二串联谐振单元2(特定串联谐振单元)包括依次串联的第一谐振器S21、第二谐振器S22和第三谐振器S23，第一谐振器组21包括第一谐振器S21和第三谐振器S23，第二谐振器组22包括第二谐振器S22；其中，第一谐振器S21与第三谐振器S23的面积相同，第一谐振器S21和第二谐振器S22的面积不同。
请参见图7，本实施例提供了又一种滤波器，该滤波器的第二串联谐振单元2(特定串联谐振单元)包括依次串联的第一谐振器S21、第二谐振器S22、第三谐振器S23和第四谐振器S24，第一谐振器组21包括第一谐振器S21和第二谐振器S22，第二谐振器组22包括第三谐振器S23和第四谐振器S24；其中，第一谐振器S21与第三谐振器S23的面积相同，第二谐振器S22和第四谐振器S24的面积相同，第一谐振器S21和第二谐振器S22的面积不同。
请参见图8，本实施例提供了再一种滤波器，该滤波器的第二串联谐振单元2(特定串联谐振单元)包括依次串联的第一谐振器S21、第二谐振器S22、第三谐振器S23和第四谐振器S24，第一谐振器组21包括第一谐振器S21和第二谐振器S22，第二谐振器组22包括第三谐振器S23和第四谐振器S24；其中，第一谐振器S21、第二谐振器S22和第三谐振器S23的面积相同，第一谐振器S21和第四谐振器S24的面积不同。
请参见图9，一般情况下，串联谐振器(串联谐振单元中的谐振器)的Fs与并联谐振器(并联谐振单元中的谐振器)的Fp’基本相当，从而根据阻抗比形成滤波器的基本形状。图9所示出的区域即为滤波器的通带频率范围，也就是关注群时延特性的区域，由于横向谐振只存在于Fs以下的一段频率，由图9可以看出，只有串联谐振器的横向谐振毛刺会位于滤波器的通带。
如前所述，特定串联谐振单元可以是一个或多个。也就是说，以三个串联谐振单元为例，第一串联谐振单元包括两个谐振频率不同的谐振器，或者/并且第三串联谐振单元包括两个谐振频率不同的谐振器。为了便于说明，仅以图7所示的滤波器为例，第一串联谐振单元1包括第五谐振器S11和第六谐振器S12，第五谐振器S11和第六谐振器S12的谐振频率不同；第三串联谐振单元3包括第七谐振器S31和第八谐振器S32，第七谐振器S31和第八谐振器S32的谐振频率不同。具体地，可以通过将第五谐振器S11和第六谐振器S12设计为面积不同的谐振器来使第五谐振器S11和第六谐振器S12的谐振频率不同；将第七谐振器S31和第八谐振器S32设计为面积不同的谐振器来使第七谐振器S31和第八谐振器S32的谐振频率不同。
请参见图3，并结合图4、图6、图7以及图8中的任一附图，本申请实施例中的滤波器中的并联部分II包括第一并联谐振器P1和第二并联谐振器P2；第一并联谐振器P1连接在第一串联谐振单元1和第二串联谐振单元2之间，第二并联谐振器P2连接在第二串联谐振单元2和第三串联谐振单元3之间。
具体地，第一串联谐振单元1的输入端、第三串联谐振单元3的输出端、第一并联谐振器P1的接地端以及第二并联谐振器P2的接地端，均与一个电感连接。
需要说明的是，本申请中的谐振器均为薄膜体声波谐振器或固态装配谐振器。其中基于体声波原理制造的薄膜体声波谐振器FBAR和固态装配谐振器SMR，相比基于表面声波原理制造的表面声波谐振器SAW，具有更高的Q值。因此，采用薄膜体声波谐振器或固态装配谐振器，能够进一步提升滤波器的性能，以提升通信信道的性能，从而提升通信速率。
可选地，在第二串联谐振单元中，第一谐振器组的谐振器的形状为第一形状，第二谐振器组的谐振器的形状为第二形状，第一形状与第二形状不同。通过将第一谐振器组的谐振器和第二谐振器组的谐振器设计为不同形状的谐振器，能够进一步降低滤波器的群延时。
进一步地，由于FBAR谐振器的横向谐振模式取决于形状横向谐振驻波的形成，而相互平行的边(如四条边的矩形或者平行四边形)会造成这种横向谐振非常容易形成，因此，一般都会将FBAR设置成大于或等于5条边的多边形，并且尽量不让各边相互平行。
更进一步地，将谐振器设计为长宽比大致为2：1的矩形，并使第二串联谐振单元中的谐振器的输入边(和/或输出边)与另一个谐振器中的连接边的长度不同，从而能够降低滤波器的横向谐振。
以图4中所示的滤波器中的电路图为例，将图4中所示的滤波器中的第二串联谐振单元(特定串联谐振单元)拆分后得到的谐振器的版图如图10所示，在第二串联谐振单元中的四个谐振器中，第一谐振器组21包括第一谐振器S21和第二谐振器S22，第一谐振器S21具有第一输入边A和第一连接边B，第二谐振器S22具有第一输出边D和第二连接边C，第二谐振器组22包括第三谐振器S23和第四谐振器S24，第三谐振器S23具有第二输入边E和第三连接边F，第四谐振器S24具有第二输出边H和第四连接边G，第一连接边B与第二连接边C相连，第三连接边F与第四连接边G相连；其中，第一连接边B的长度与第二连接边C的长度相同，第一输入边A的长度与第一连接边B的长度不同，第一输出边D的长度与第一连接边B的长度不同，第三连接边F的长度与第四连接边G的长度相同，第二输入边E的长度与第三连接边F的长度不同，第二输出边H的长度与第三连接F边的长度不同。
也就是在版图在设计的时候，对于同一个谐振器组(第一谐振器组21或第二谐振器组22)，其信号输入边或输出边，与同一谐振器组内部的连接边，在长度上有明显的差异。具体地，如图10所示，对于第一谐振器S21和第二谐振器S22这组，是短边进入，它们之间是长边相接。对于第三谐振器S23和第四谐振器S24这组，是短边输出，它们之间也是长边相接。
请参见图11，将第二串联谐振单元，设计为两个面积不同、频率不同的谐振器组，使得其阻抗在频率上相互弥补，并且至少有一个谐振器组 通过等面积拆分，再拆成两个或多个大面积的谐振器，每一个谐振器组的对外连接，以及它们之间的连接边的长度有明显的差异，从而使得第一谐振器组和第二谐振器组的谐振频率不同，进而改善滤波器的群时延波动特性。具体地，其中可以将第一谐振器S21和第二谐振器S22的面积设置为5110um2，第三谐振器S23和第四谐振器S24的面积设置为5005um 2，二者相差约2％。请结合图5，由于两个谐振器组的谐振器的面积和形状均有不同，其阻抗横向谐振模式也不相同，因此，二者在阻抗毛刺的尖峰和凹陷部分相互弥补，能够提升滤波器响应曲线的平滑度，从而改善群时延波动特性。
以图6中所示的滤波器中的电路图为例，将图6中所示的滤波器中的第二串联谐振单元拆分后得到的谐振器的版图如图12所示，在第二串联谐振单元中的三个谐振器中，第一谐振器组21包括第一谐振器S21和第三谐振器S23，第一谐振器S21具有输入边A和第一连接边B，第三谐振器S23具有输出边F和第二连接边E，第二谐振器组22包括第二谐振器S22，第二谐振器S22具有第三连接边C和第四连接边D，第一连接边B与第三连接边C相连，第二连接边E与第四连接边D相连；其中，第一连接边B的长度、第二连接边C的长度、第三连接边D的长度以及第四连接边E的长度均相同，输入边A的长度与第一连接边B的长度不同，输出边F的长度与第一连接边B的长度不同。也就是将第一谐振器组的谐振器进行等面积拆分，以使其信号输入边和输出边的长度均不同，其阻抗横向谐振模式也不相同，因此，二者在阻抗毛刺的尖峰和凹陷部分相互弥补，能够提升滤波器响应曲线的平滑度，从而改善群时延波动特性。
根据本申请实施例的技术方案，通过将一个或多个串联谐振单元设置为两个谐振频率不同的谐振器组，这两个谐振频率不同的谐振器组的阻抗横向谐振模式也不相同，使这两个谐振频率不同的谐振器组在阻抗毛刺的尖峰和凹陷部分相互弥补，能够提升滤波器响应曲线的平滑度，从而改善群时延波动特性。

Claims (12)

  1. 一种滤波器，其特征在于，包括串联部分和并联部分，所述串联部分包括多个依次串联的串联谐振单元；
    所述多个依次串联的串联谐振单元其中至少之一为特定串联谐振单元，所述特定串联谐振单元包括串联的第一谐振器组和第二谐振器组，所述第一谐振器组和所述第二谐振器组的谐振频率不同。
  2. 根据权利要求1所述的滤波器，其特征在于，所述第一谐振器组和所述第二谐振器组的谐振频率相差平均谐振频率的0.2‰～5‰。
  3. 根据权利要求2所述的滤波器，其特征在于，所述第一谐振器组和所述第二谐振器组均包括至少一个谐振器，所述第一谐振器组的谐振器的面积与所述第二谐振器组的谐振器的面积不同，以使所述第一谐振器组和所述第二谐振器组的响应曲线中横向谐振毛刺的分布不同。
  4. 根据权利要求3所述的滤波器，其特征在于，所述特定串联谐振单元包括依次串联的第一谐振器、第二谐振器、第三谐振器和第四谐振器，所述第一谐振器组包括所述第一谐振器和所述第二谐振器，所述第二谐振器组包括所述第三谐振器和所述第四谐振器；其中
    所述第一谐振器与所述第二谐振器的面积相同，所述第三谐振器和所述第四谐振器的面积相同，所述第一谐振器和所述第三谐振器的面积不同。
  5. 根据权利要求3所述的滤波器，其特征在于，所述特定串联谐振单元包括依次串联的第一谐振器、第二谐振器和第三谐振器，所述第一谐振器组包括所述第一谐振器和所述第三谐振器，所述第二谐振器组包括所述第二谐振器；其中
    所述第一谐振器与所述第三谐振器的面积相同，所述第一谐振器和所 述第二谐振器的面积不同。
  6. 根据权利要求3所述的滤波器，其特征在于，所述特定串联谐振单元包括依次串联的第一谐振器、第二谐振器、第三谐振器和第四谐振器，所述第一谐振器组包括所述第一谐振器和所述第三谐振器，所述第二谐振器组包括所述第二谐振器和所述第四谐振器；其中
    所述第一谐振器与所述第三谐振器的面积相同，所述第二谐振器和所述第四谐振器的面积相同，所述第一谐振器和所述第二谐振器的面积不同。
  7. 根据权利要求3所述的滤波器，其特征在于，所述特定串联谐振单元包括依次串联的第一谐振器、第二谐振器、第三谐振器和第四谐振器，所述第一谐振器组包括所述第一谐振器、所述第二谐振器和所述第三谐振器，所述第二谐振器组包括所述第四谐振器；其中
    所述第一谐振器、所述第二谐振器和所述第三谐振器的面积相同，所述第一谐振器和所述第四谐振器的面积不同。
  8. 根据权利要求1-3中任一项所述的滤波器，其特征在于，所述第一谐振器组的谐振器的形状为第一形状，所述第二谐振器组的谐振器的形状为第二形状，所述第一形状与所述第二形状不同。
  9. 根据权利要求8所述的滤波器，其特征在于，所述第一谐振器组包括第一谐振器和第二谐振器，所述第一谐振器具有第一输入边和第一连接边，所述第二谐振器具有第一输出边和第二连接边，所述第二谐振器组包括第三谐振器和第四谐振器，所述第三谐振器具有第二输入边和第三连接边，所述第四谐振器具有第二输出边和第四连接边，所述第一连接边与所述第二连接边相连，所述第三连接边与所述第四连接边相连；
    其中，所述第一连接边的长度与所述第二连接边的长度相同，所述第一输入边的长度与所述第一连接边的长度不同，所述第一输出边的长度与 所述第一连接边的长度不同，所述第三连接边的长度与所述第四连接边的长度相同，所述第二输入边的长度与所述第三连接边的长度不同，所述第二输出边的长度与所述第三连接边的长度不同。
  10. 根据权利要求8所述的滤波器，其特征在于，
    所述第一谐振器组包括第一谐振器和第三谐振器，所述第一谐振器具有输入边和第一连接边，所述第三谐振器具有输出边和第二连接边，所述第二谐振器组包括第二谐振器，所述第二谐振器具有第三连接边和第四连接边，所述第一连接边与所述第三连接边相连，所述第二连接边与所述第四连接边相连；
    其中，所述第一连接边的长度、所述第二连接边的长度、所述第三连接边的长度以及所述第四连接边的长度均相同，所述输入边的长度与所述第一连接边的长度不同，所述输出边的长度与所述第一连接边的长度不同。
  11. 根据权利要求1-7中任一项所述的滤波器，其特征在于，所述并联部分包括第一并联谐振器和所述第二并联谐振器；
    所述第一并联谐振器连接在所述第一串联谐振单元和所述第二串联谐振单元之间，所述第二并联谐振器连接在所述第二串联谐振单元和所述第三串联谐振单元之间。
  12. 根据权利要求1-7中任一项所述的滤波器，其特征在于，所述谐振器为薄膜体声波谐振器或固态装配谐振器。
PCT/CN2020/111352 2019-11-15 2020-08-26 滤波器 WO2021093409A1 (zh)

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