WO2021093370A1 - 一种utbb光电探测器像素单元、阵列和方法 - Google Patents
一种utbb光电探测器像素单元、阵列和方法 Download PDFInfo
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- WO2021093370A1 WO2021093370A1 PCT/CN2020/104518 CN2020104518W WO2021093370A1 WO 2021093370 A1 WO2021093370 A1 WO 2021093370A1 CN 2020104518 W CN2020104518 W CN 2020104518W WO 2021093370 A1 WO2021093370 A1 WO 2021093370A1
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- 238000000034 method Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 230000005684 electric field Effects 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000009825 accumulation Methods 0.000 claims abstract description 30
- 230000009471 action Effects 0.000 claims abstract description 14
- 239000000969 carrier Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 238000002955 isolation Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Definitions
- This application relates to the field of silicon-based photodetectors, and in particular to a UTBB photodetector pixel unit, array and method.
- Photoelectric imaging detectors are widely used in military, medical, automotive, mobile equipment, etc.
- the mainstream photoelectric imaging detectors are charge-coupled device (CCD) photoelectric devices and CMOS-APS photoelectric devices.
- CCD photoelectric devices directly perform photodetection through charge transfer, while CMOS-APS photoelectric devices collect through pixel unit photodiodes. After the charge is converted into a voltage signal, it is amplified and read by the CMOS circuit.
- the two types of photodetector devices have their own advantages and disadvantages.
- a single pixel unit of the two photodetectors includes multiple transistors and other device structures, so that the pixel size is limited to the order of micrometers and cannot be further reduced.
- UTBB ultra-thin body and buried oxygen
- this application proposes a UTBB photodetector pixel unit, array and method.
- this application proposes a UTBB photodetector pixel unit, including: a silicon film layer, a buried oxygen layer, a charge collection layer, and a substrate.
- the silicon film layer, the buried oxygen layer, the charge collection layer, and the substrate Set in order from top to bottom;
- the silicon film layer includes: NMOS tube or PMOS tube;
- the charge collection layer is used to form a centripetal electric field to collect photo-generated charges, and includes a charge collection control area and a charge accumulation area;
- the substrate includes: an N-type substrate or a P-type substrate.
- the source terminal and the drain terminal of the NMOS tube are respectively located on both sides of the channel of the NMOS tube, and the gate terminal of the NMOS tube is on the channel of the NMOS tube;
- the source terminal and the drain terminal of the PMOS tube are respectively located on both sides of the channel of the PMOS tube, and the gate terminal of the PMOS tube is on the channel of the PMOS tube.
- the present application proposes a UTBB photodetector array, including: a plurality of the photodetector pixel units, the plurality of photodetector pixel units form a photodetector array, wherein the photodetector Both the number of rows and the number of columns of the array are natural numbers greater than or equal to 2.
- the NMOS tubes or PMOS tubes of the adjacent photodetector pixel units use the same source terminal or drain terminal.
- the photodetector array includes multiple columns of word lines, multiple rows of bit lines, electrodes in a common area, and a common source, wherein the source ends of all NMOS transistors or the source ends of PMOS transistors are connected to the common source, and the charge is collected All the charge collection control areas of the layer are connected with the electrodes of the common area, the gate terminal of each column of photodetectors is connected with its corresponding word line, and the drain of each row of photodetectors is connected with its corresponding bit line.
- this application proposes a detection method for the pixel unit of the UTBB photodetector, which includes:
- the photogenerated carriers accumulated in the charge accumulation area change according to the light intensity, so that the threshold voltage and drain current of the NMOS tube or PMOS tube are changed;
- the advantage of the present application is that by forming a centripetal electric field around the charge accumulation area, the photo-generated charges are accumulated in the corresponding pixel unit under the action of the centripetal electric field.
- the existence of the centripetal electric field improves the photoelectric conversion efficiency, suppresses the crosstalk between pixels, saves the area of shallow trench isolation, reduces the size, and makes it more suitable for sub-micron pixels.
- Figure 1 is a structural diagram of a UTBB photodetector pixel unit provided by the present application
- Figure 2 is a structural diagram of a UTBB photodetector array provided by the present application.
- FIG. 3 is a schematic diagram of the steps of a detection method of a UTBB photodetector pixel unit provided by the present application;
- FIG. 4 is a MOS tube transfer characteristic curve diagram of a UTBB photodetector pixel unit detection method provided by the present application before and after illumination;
- Fig. 5 is a diagram of the potential distribution at the interface between adjacent P-type wells and N-type wells and the buried oxide layer before and after illumination of a method for detecting pixel units of a UTBB photodetector provided by the present application.
- a UTBB photodetector pixel unit is proposed, as shown in FIG. 1, including: a silicon film layer, a buried oxygen layer, a charge collection layer and a substrate, a silicon film layer, a buried oxygen layer, and a charge collection Layers and substrates are arranged from top to bottom in sequence;
- the silicon film layer includes: NMOS tube or PMOS tube;
- the charge collection layer includes alternately arranged charge collection control regions and charge accumulation regions;
- the substrate includes: N-type substrate or P-type substrate.
- the source terminal and drain terminal of the NMOS tube are respectively located on both sides of the channel of the NMOS tube, and the gate terminal of the NMOS tube is on the channel of the NMOS tube;
- the source terminal and the drain terminal of the PMOS tube are respectively located on both sides of the channel of the PMOS tube, and the gate terminal of the PMOS tube is on the channel of the PMOS tube.
- the channel length of the NMOS tube and the PMOS tube is 20 to 100 nanometers, the length of the source end is 20 to 90 nanometers, and the length of the drain end is 20 to 90 nanometers.
- the silicon film thickness of the silicon film layer is 5 to 20 nanometers.
- the thickness of the buried oxide layer is 10 to 30 nanometers.
- the depth of the charge collection layer is 50 to 1000 nanometers.
- the charge collection layer includes at least one charge accumulation region. That is, each pixel unit must include a charge accumulation area for generating a centripetal electric field and accumulating photo-generated charges.
- the silicon film layer can use all NMOS tubes or PMOS tubes, and the use of NMOS tubes or PMOS tubes does not affect other layers (such as the charge collection control area and the charge accumulation area where the charge collection layer is alternately arranged) and the substrate (N-type Substrate or P-type substrate).
- the relative positions of the charge accumulation area, the charge collection control area and the silicon film layer of the MOSFET in the lateral direction can be adjusted.
- the structure of the charge collection layer is not limited to the alternate arrangement of P-type wells and N-type wells.
- the doping concentration and area of the P-type well and the N-type well can be adjusted separately.
- the charge collection control area is an N-type well
- the charge accumulation area is a P-type well
- the substrate is an N-type substrate, for example, each pixel unit must include one
- the charge accumulation area, the location of the charge accumulation area may be in the center of the pixel unit or not in the center of the pixel unit.
- the charge collection control region in the charge collection layer may also be a P-type well, and at the same time, the charge accumulation region is an N-type well.
- the charge collection control area and the charge accumulation area in the charge collection layer may also include substances used to form other structures such as heterojunctions.
- the PN junction consists of an N-type well and a P-type well in close contact.
- a horizontal PN junction is formed between the P-type well and the N-type well, and a vertical PN junction is formed between the P-type well and the N-type substrate.
- the two together form a centripetal as shown by the arrow in Figure 1 electric field.
- the light enters the photodetector from above the device, generates photo-generated charges in the well and the substrate, and the photo-generated charges are collected in the corresponding pixel unit under the action of the centripetal electric field.
- the P-type well and the N-type well can be exchanged, that is, a corresponding voltage is applied to the P-type well, and the N-type well is used to collect photo-generated charges.
- a corresponding voltage is applied to the P-type well
- the N-type well is used to collect photo-generated charges.
- an N-type substrate is used and a voltage is applied to the N-type well. If you want to generate a centripetal electric field in the N-type well, you need to apply a voltage to the P-type well, and the substrate needs to use a P-type substrate.
- the light can be incident (irradiated) from above and/or below the pixel unit of the photodetector.
- the method of forming a centripetal electric field around the charge accumulation region includes, but is not limited to: forming alternately arranged N-type wells and P-type wells in the charge collection layer as the charge collection control region and the charge accumulation region, respectively.
- a horizontal PN junction is formed between the wells, and a vertical PN junction is formed between the P-type well and the N-type substrate.
- the horizontal PN junction and the vertical PN junction electric field together form a centripetal electric field. It can also be formed by forming other structures such as heterojunctions. Heart electric field.
- this application proposes a UTBB photodetector array, as shown in Fig. 2, comprising: a plurality of photodetector pixel units, and a plurality of photodetector pixel units form a photodetector array, wherein the photodetector array Both the number of rows and the number of columns are natural numbers greater than or equal to 2.
- NMOS tubes or PMOS tubes of adjacent photodetector pixel units use the same source terminal or drain terminal.
- Figure 1 includes three pixel units, and adjacent NMOS or PMOS transistors share the source and drain terminals.
- the photodetector array includes multiple columns of word lines, multiple rows of bit lines, electrodes in the common area, and common sources.
- the source terminals of all NMOS transistors or PMOS transistors are connected to the common source, and all the charges in the charge collection layer are collected.
- the control area is connected with the electrode of the common area, the gate terminal of each column of photodetectors is connected with its corresponding word line, and the drain of each row of photodetectors is connected with its corresponding bit line.
- All NMOS transistor source terminals are connected to the common source Vs and set to 0 potential. All charge collection control areas in the substrate (in this example, N-type wells) are connected to the common area electrode (common N area electrode Vn). Each column of devices (photoelectric The gate terminal of the detector pixel unit is connected to the word line, and the drain terminal of each row of devices is connected to the bit line. When the device is reset, all word lines are set to 0 potential, all bit lines are set to 0 potential, and the N-type well is set to negative potential. When the signal is collected, all word lines and bit lines maintain a 0 potential, and the N-type well is set to a positive potential. When the signal is read, all bit lines are set to +Vdd, and each column of word lines is selected in turn, the electrical position of the selected word line is +Vdd, and the signal current of each NMOS tube is read through the bit line.
- this application proposes a detection method for the pixel unit of the UTBB photodetector, as shown in FIG. 3, including:
- S101 Apply a corresponding voltage to the charge collection control area, so that incident light generates photogenerated carriers in the charge collection layer and the substrate.
- the photogenerated carriers enter the charge accumulation area under the action of a centripetal electric field and are under the buried oxygen layer.
- the voltage applied to the charge collection control area is changed according to its specific structure and material.
- the charge collection control area is an N-type well
- the charge accumulation area is a P-type well
- the substrate is an N-type substrate as an example, the implementation of the present application will be further described.
- a positive voltage is applied to the charge collection control area of the charge collection layer, so that the incident light generates photogenerated carriers in the charge collection layer and the substrate.
- the photogenerated carriers enter the charge accumulation area under the action of a centripetal electric field and are buried in oxygen. Gather under the layer;
- the photogenerated carriers accumulated in the charge accumulation area change according to the light intensity, so that the threshold voltage and drain current of the NMOS tube are changed;
- the charge collection control area is a P-type well
- the charge accumulation area is an N-type well
- the substrate is an N-type substrate as an example, the implementation of the present application will be further described.
- a negative voltage is applied to the charge collection control area of the charge collection layer, so that the incident light generates photogenerated carriers in the charge collection layer and the substrate.
- the photogenerated carriers enter the charge accumulation area under the action of a centripetal electric field and are buried in oxygen. Gather under the layer;
- the photogenerated carriers accumulated in the charge accumulation area change according to the light intensity, so that the threshold voltage and drain current of the NMOS tube are changed;
- Photo-generated holes and photo-generated electrons are generated when semiconductor materials are excited by light, and are collectively referred to as photo-generated carriers.
- the photogenerated carriers are separated under the action of the self-built electric field of the PN junction.
- the light-generated holes enter the P-type well under the action of a centripetal electric field.
- the detection method of the embodiment of the present application is mainly divided into three processes of resetting, collecting, and reading. Taking the silicon film layer using an NMOS tube as an example, the corresponding electrode bias conditions are shown in Table 1.
- a reset pulse signal Vreset is applied to the N-type well terminal to bias the PN junction forward, and the positive bias current injects charges into the floating P-type well and resets the P-type well voltage to the initial voltage.
- the device In the collection stage, the device is exposed, the voltage at the N-well terminal is set to +Vdd, and the PN junction is reverse biased.
- the incident light generates photo-generated carriers in the PN junction below the device, and the photo-generated carriers are separated under the action of the self-built electric field of the PN junction.
- the photo-generated holes Under the action of the centripetal electric field, the photo-generated holes enter the P-type well and accumulate under the buried oxygen layer.
- the optical signal is read out through the drain current of the MOSFET above the buried oxide layer.
- Both the gate electrode (gate terminal) and the drain electrode (drain terminal) of the NMOS tube are set to a positive voltage.
- the photo-generated holes gathered under the buried oxide layer raise the potential at the interface between the buried oxide layer and the substrate, and act on the upper MOSFET device channel through the buried oxide layer.
- the buried oxide layer forms a structure similar to a capacitor, making the NMOS tube device trench The inversion carriers in the channel increase, and the threshold voltage decreases.
- the amount of positive charge accumulated in the substrate under the buried oxide layer is different, so that the threshold voltage of the MOSFET device is different, and the drain current is different.
- the light intensity can be evaluated indirectly by measuring the drain current of the MOSFET above the buried oxide layer.
- Figure 4 shows the transfer characteristic curve of the MOSFET device before and after illumination.
- the photo-generated charges are accumulated in the corresponding pixel unit under the action of the centripetal electric field.
- the charge collection control regions and the charge accumulation regions alternately arranged in the charge collection layer can be N-type wells (N-type doped regions) and P-type wells (P-type doped regions).
- the substrate includes an N-type substrate or a P-type. Substrate, a horizontal PN junction is formed between the P-type well and the N-type well, and a vertical PN junction is formed between the P-type well and the N-type substrate. The two together form a centripetal electric field, and the photo-generated charge is in the centripetal electric field.
- centripetal electric field improves the photoelectric conversion efficiency, suppresses the crosstalk between pixels, saves the area of shallow trench isolation, reduces the size, and makes it more suitable for sub-micron pixels.
- the centripetal electric field can actively accumulate charge in the corresponding pixel unit; the photo-generated charge accumulated under the buried oxide layer affects the electrical characteristics of the MOSFET through the back gate modulation effect.
- Photodetector array structure based on UTBB and centripetal electric field The array arrangement of the source and drain shared by each row of pixels avoids shallow groove isolation and improves pixel density.
- centripetal electric field is used to collect the photo-generated charges, and the horizontal electric field and the vertical electric field work together, so that the photo-generated electrons can drift and gather under the buried oxygen layer.
- the centripetal electric field collects photo-generated charges and suppresses crosstalk, and adopts an array arrangement of shared source and drain, which saves the area of shallow groove isolation and makes it more suitable for sub-micron pixels.
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Abstract
Description
复位 | 收集 | 读取 | |
NMOS管栅端电压 | 0 | 0 | +Vdd |
NMOS管漏端电压 | 0 | 0 | +Vdd |
NMOS管源端电压 | 0 | 0 | 0 |
N型阱电压 | Vreset | +Vdd | +Vdd |
Claims (6)
- 一种UTBB光电探测器像素单元,其特征在于,包括:硅膜层、埋氧层、电荷收集层和衬底,所述硅膜层、埋氧层、电荷收集层和和衬底依次从上至下设置;所述硅膜层包括:NMOS管或PMOS管;所述电荷收集层用于形成向心电场以收集光生电荷,包括电荷收集控制区和电荷聚集区;所述衬底包括:N型衬底或P型衬底。
- 如权利要求1所述的光电探测器像素单元,其特征在于,所述NMOS管的源端和漏端分别位于NMOS管的沟道两侧,NMOS管的栅端在NMOS管的沟道上;所述PMOS管的源端和漏端分别位于PMOS管的沟道两侧,PMOS管的栅端在PMOS管的沟道上。
- 一种UTBB光电探测器阵列,其特征在于,包括:多个权利要求1-7任意一项所述的光电探测器像素单元,多个所述光电探测器像素单元组成光电探测器阵列,其中所述光电探测器阵列的行数和列数都为大于等于2的自然数。
- 如权利要求3所述的光电探测器阵列,其特征在于,相邻的所述光电探测器像素单元的NMOS管或PMOS管使用同一个源端或漏端。
- 如权利要求3所述的光电探测器阵列,其特征在于,所述光电探测器阵列包括多列字线、多行位线、公共区电极和公共源极,其中,所有NMOS管的源端或PMOS管的源端与公共源极相连,电荷收集层所有的电荷收集控制区与所述公共区电极相连,每列光电探测器的栅端和与其对应的字线相连,每行光电探测器的漏极和与其对应的位线相连。
- 一种UTBB光电探测器像素单元的探测方法,其特征在于,包括:对电荷收集控制区施加相应电压,在电荷聚集区周围产生向心电场,入射光在电荷收集层与衬底中产生光生载流子,光生载流子在向心电场的作用下进入电荷聚集区,并在埋氧层下聚集;对硅膜层的栅端和漏端施加正电压,对电荷收集控制区施加相应电压;电荷聚集区之中聚集的光生载流子根据光照强度改变,从而使NMOS管或PMOS管的阈值电压和漏端电流均发生改变;测量埋氧层上方硅膜层的漏端电流;评估光照强度。
Priority Applications (3)
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KR1020217029060A KR102617788B1 (ko) | 2019-11-13 | 2020-07-24 | Utbb 광전 검출기 픽셀 유닛, 어레이 및 방법 |
US17/442,806 US20220254822A1 (en) | 2019-11-13 | 2020-07-24 | Uttb photodetector pixel unit, array and method |
JP2021562050A JP2022529184A (ja) | 2019-11-13 | 2020-07-24 | Utbb光検出器ピクセルユニット、アレイ及び方法 |
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CN201911108333.5A CN111063702B (zh) | 2019-11-13 | 2019-11-13 | 一种utbb光电探测器像素单元、阵列和方法 |
CN201911108333.5 | 2019-11-13 |
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WO2024092406A1 (zh) * | 2022-10-31 | 2024-05-10 | 北京大学 | 互补光电晶体管像素单元、感算阵列结构及其操作方法 |
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