WO2021083956A1 - Verfahren und vorrichtung zum abscheiden organischer schichten - Google Patents
Verfahren und vorrichtung zum abscheiden organischer schichten Download PDFInfo
- Publication number
- WO2021083956A1 WO2021083956A1 PCT/EP2020/080278 EP2020080278W WO2021083956A1 WO 2021083956 A1 WO2021083956 A1 WO 2021083956A1 EP 2020080278 W EP2020080278 W EP 2020080278W WO 2021083956 A1 WO2021083956 A1 WO 2021083956A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- delivery line
- organic molecules
- line
- substrate
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C19/00—Apparatus specially adapted for applying particulate materials to surfaces
- B05C19/04—Apparatus specially adapted for applying particulate materials to surfaces the particulate material being projected, poured or allowed to flow onto the surface of the work
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15D—FLUID DYNAMICS, i.e. METHODS OR MEANS FOR INFLUENCING THE FLOW OF GASES OR LIQUIDS
- F15D1/00—Influencing flow of fluids
- F15D1/001—Flow of fluid from conduits such as pipes, sleeves, tubes, with equal distribution of fluid flow over the evacuation surface
Definitions
- the invention relates to a method for depositing layers on a substrate, in which a gas flow consisting of previously evaporated organic molecules with a molar mass greater than g / mole are fed in, the molecules of the one or more gas flows are mixed homogeneously in the carrier gas by multiple diversions by means of gas deflection elements, the mixture thus generated is passed as a gas flow from an output of the gas mixing device into a delivery line, through the delivery line into a gas distribution volume Gas inlet element is promoted, exits through gas outlet openings of the gas distribution volume in the direction of a susceptor and the molecules are deposited as an organic layer on a substrate taken up by the substrate holder.
- the invention also relates to a device for carrying out the method with a gas mixing device which has one or more inputs each for feeding in a gas flow consisting of previously evaporated organic molecules with a molar mass greater than 300 g / mol, conveyed by a carrier gas or 400 g / mol, gas deflection elements that mix the gas flows homogeneously with one another by multiple deflections, and an outlet from which a homogeneous gas mixture emerges, with a delivery line that connects to the outlet, and with a gas inlet element that has a gas distribution volume into which the delivery line opens and which has a gas outlet surface having gas outlet openings which is opposite a substrate holder for receiving the substrate.
- a gas mixing device which has one or more inputs each for feeding in a gas flow consisting of previously evaporated organic molecules with a molar mass greater than 300 g / mol, conveyed by a carrier gas or 400 g / mol, gas deflection elements that mix the gas flows homogeneously
- a device for depositing layers on substrates, in which two different gases are mixed in a mixing device and transported through a conveying line to a gas inlet element in the form of a showerhead, is shown in DE 102014106523 A1.
- a device for vaporizing an aerosol, which is transported together with a carrier gas in a Gasver partial volume of a showerhead, is already known from DE 102014109196 A1.
- WO 2012/175128 A1 describes a device for generating a steam which is brought into a gas inlet element through a delivery line.
- the large-area deposition of layers consisting in particular of organic material, in particular for OLEDs takes place with a gas inlet element in the form of a showerhead, which has a gas distribution volume that is fed by a delivery line.
- a gas mixing system With a gas mixing system, a homogeneous mixture of a vapor of molecules with a molar mass greater than 300 g / mol or greater than 400 g / mol, in particular ALQ3 molecules, is mixed in a carrier gas. A gas flow of this mixture is fed into the delivery line. The gas flow emerging from the delivery line is distributed within the gas distribution volume and enters the process chamber through gas outlet openings of a gas outlet plate. Opposite the gas outlet openings is the substrate on which the layer is deposited.
- total pressures within the gas distribution chamber or the delivery line or the process chamber of around 1 mbar are used. In attempts to reduce the total pressure inside the gas distribution chamber, lateral irregularities in the layer growth or in the layer composition were observed.
- the invention is based on the object of specifying measures with which the total pressure within the process chamber and the gas distribution chamber can be reduced to below 1 mbar without the observed lateral inhomogeneities in the layer growth or the layer composition occurring.
- the invention is based on the knowledge that the lateral inhomogeneities are due to segregation of the mixture fed into the delivery line.
- concentration of the steam molecules in the area of the center increases.
- a concentration gradient of the large molecules forms from the center to the edge.
- This concentration gradient is traced back to a diffusion directed transversely to the flow (transverse diffusion), which is caused by a temperature inhomogeneity in the cross-sectional area of the delivery line.
- transverse diffusion transverse diffusion
- the parabolic flow is formed within the delivery line. This is done with local accelerations or decelerations of the gas.
- the associated local change in energy in the gas flow takes place adiabatically, with the result that the temperature in areas where the gas is accelerated, decreases. This is the case in particular in the center of the gas flow, so that a temperature gradient that falls from the edge of the delivery line to its center is formed. This is responsible for thermal diffusion (thermophoresis) of the large organic molecules to the center. Another cause of segregation towards the center can be the shear stress gradient of the flow, which decreases from the edge to the center of the delivery line.
- Diameter of the delivery line and mean velocity of the flow therein is above a lower limit value.
- the Mach number of the mean flow velocity should be less than 0.1 if possible.
- the mean flow velocity should therefore in particular be less than 40 m / s, 30 m / s, 20 m / s or 10 m / s.
- the value of a function with the arguments gas flow through the delivery line, pressure in the delivery line, temperature of the delivery line and diameter of the delivery line should be below a limit value that depends on a maximum permissible inhomogeneity of the deposited layer.
- the maximum inhomogeneity of the layer should, for example, not be greater than 0.5 percent or not greater than 1 percent.
- means are proposed in particular with which the pressure within the delivery line is increased, for example to pressures in the range of 0.5 mbar or 1 mbar.
- the pressure barrier with which this is achieved is preferably arranged at the end of the conveying line and is located in particular within the volume of the Gasverteilvo.
- the pressure barrier can have a plate shaped into a ring with gas passage openings, which surrounds a volume into which the gas mixture transported through the conveying line is fed. The gas mixture enters the gas distribution chamber through the gas passage openings.
- the pressure barrier can have an annular body with gas passage openings which surrounds a volume which is closed with a base, the base preferably not having any gas passage openings and facing the mouth of the delivery line. Due to the pressure barrier, the pressure in the gas distribution chamber can be less than half, a quarter or an eighth of the pressure in the delivery line, but preferably not less than 1/10 or 1/20 of the pressure in the delivery line, wel cher preferably greater than 1 mbar or 0.5 mbar. However, it is also possible to set the diameter of the delivery line to be correspondingly large in order to set the flow velocity or the quotient mentioned above. Furthermore, diffusion influencing means can be provided with which the diffusion of the large molecules directed transversely to the flow is reduced, inhibited or avoided.
- the means for influencing diffusion can be physical barriers that divide the flow through the delivery line into several parallel partial flows, for example coaxial flows.
- the diffusion influencing means can be tubes nested in one another and / or extend over the entire length of the conveying line.
- the gas mixing device has at least one inlet into which a mixture of an organic vapor in a carrier gas is fed.
- the gas mixing device has a large number of gas deflection elements with which the gas flow is redirected several times so that the most perfect possible mixture is formed at the outlet of the gas mixing device.
- the gas mixing device has two or more inlets through which mixtures of organic molecules different from one another are fed.
- the various organic molecules can be brought into vapor form by evaporating a solid or a liquid.
- an aerosol generator is preferably used in each case, which generates an aerosol that is transported to an evaporator with a carrier gas, which is fed with a feed line into which an aerosol generator is fed, where the aerosol particles evaporate by coming into contact with heat transfer surfaces.
- the different vapors are mixed in the gas mixing device.
- T temperature of the gas in the delivery line
- Fig. 1 is a schematic representation of a device according to the invention in the manner of a longitudinal section
- FIG. 2 shows a detail from FIG. 1 relating to a second exemplary embodiment
- FIG. 3 shows a detail from FIG. 1 relating to a third exemplary embodiment
- Fig. 9 shows the influence of the mean velocity of the gas flow within the delivery line 9 on the unevenness of the separated layer
- FIG. 1 shows schematically a device according to the invention.
- the device according to the invention can have at least one source of an organic vapor.
- This source has an aerosol generator 4 with which aerosol particles are generated from a solid or a liquid.
- the molecules of the aerosol particles have a molar mass of more than 300 g / mol or more than 400 g / mol. It is preferably aluminum tris (8-hydroxyquinoline), C27H18AIN3O3, with a molar mass of 459.43 g / mol.
- a carrier gas feed line 3 is provided with which a carrier gas is fed into the aerosol generator 4.
- the aerosol particles are transported via a heated aerosol line 5 to an evaporator 6, where at one Pressure PI or P2 an evaporation of the aerosol particles takes place.
- the steam generated in this way is fed into an inlet 2 of a gas mixing device 1 through a heated line.
- the gas mixing device 1 has a mixing chamber which is held by a heating device 26 at a temperature which is above the condensation temperature of the organic molecules.
- FIG. 1 it is shown schematically that the cross section of the path through which the mixture moves through the gas mixing device 1 is reduced in the region of the outlet 8, so that an increase in the speed of the gas flow takes place.
- the outlet 8 of the gas mixing device 1 opens into a winning device 9, which can be designed as a tube with a circular cross-section.
- the delivery line 9 can have a cross-sectional area of 10-20 cm 2 .
- the conveying line 9 is tempered by a heating device 27 to a temperature which can be the same temperature with which the gas mixing device 1 is also tempered. However, the two temperatures can also be different from one another.
- the gas mixture has a pressure P3.
- the delivery line 9 is located in the same housing 17 in which a gas inlet element 10 is also located.
- the delivery line 9 opens into a gas distribution volume 11 of the gas inlet element 10.
- the gas inlet element 10 has a gas inlet opening 14 through which the gas mixture transported through the delivery line 9 can enter the gas distribution volume 11.
- a bottom of the gas distribution volume 11 forms a gas outlet plate 13 with a gas outlet surface 13 '.
- gas outlet openings 12 In the Gasaus stepping plate 13 there are gas outlet openings 12.
- the Gasaustrittsöffnun gene 12 are evenly distributed over the gas outlet surface 13 '.
- the gas outlet openings 12 are directed towards a substrate 16 which is carried by a substrate holder 15 which is cooled by means of a coolant that flows through coolant channels 18 in such a way that the organic molecules can condense on the substrate 16.
- a heating device 19 is provided with which, in particular, the gas outlet plate 13 or the walls of the gas inlet element 10 are heated to a temperature which is above the condensation temperature of the organic molecules.
- FIG. 4 shows a speed profile of the flow within the conveying line 9.
- the speed profile has a parabolic shape.
- the flow velocity v is maximum and at the edge zero.
- volume elements of the gas mixture are accelerated or decelerated.
- the associated adiabatic energy change within the volume elements can lead to a temperature change and in particular a temperature drop in the center of the gas flow through the delivery line 9 at a correspondingly low total pressure or high flow velocities.
- the diffusion direction is the radial direction, so that there is segregation from the edge to the center trains.
- the gas flow has a higher concentration of organic molecules in the center than at the edge.
- this inhomogeneity is formed in the distribution of the gas mixture in the gas distribution volume 11, so that at different points through different gas outlet openings 12 gases with different concentrations tion of the organic molecules emerges, which is reflected as an unevenness in the layer growth.
- the influences of pressure and average speed on the unevenness of the layer growth are shown in FIGS. 6 to 10.
- one aspect of the invention provides that the flow velocity within the conveying line 9 is less than 40 m / s, less than 30 m / s, less than 20 m / s or less than 10 m / s is.
- FIG. 9 shows the dependence of the unevenness of the layer, i.e. the quotient between the greatest distance of the layer thickness from the mean value and the mean value of the layer thickness as a function of the mean flow rate through the delivery line 9.
- the investigations carried out show a non-linear behavior. The irregularity increases with the exponents 1,572.
- the inverse function results in a critical mean
- V m 0.00216 XV 1571 vm
- the non-uniformity of the layer thickness (og / g m ) can be kept in a permissible range by selecting the process parameters if the process parameters Q: gas flow through the delivery line (sccm under Standard Pressure Po and at standard temperature To), T: the temperature of the gas in the delivery line, P: the pressure of the gas in the delivery line and d: the diameter of the delivery line are selected such that the following inequality applies: where a for ALQ349.62, but can be larger or smaller for other molecules and where c is 1.5 ⁇ 10 7 ⁇ p.
- the invention also provides that the flow velocity is reduced by a pressure barrier 20.
- the pressure barrier 20, which is shown in FIG. 1, is one
- the bottom 23 closes the volume within the annular body 21.
- the bottom 23 is spaced from the gas outlet plate 13 and can not have any gas passage openings.
- the pressure barrier 20 it can be achieved that the pressure P3 within the delivery line 9 is not less than 1 mbar or not less than 0.6 mbar, 0.5 mbar or not less than 0.3 mbar.
- the pressure PO within the gas distribution volume 11 can, however, be significantly lower. It can be less than 1 mbar, less than 0.6 mbar or less than 0.3 mbar.
- the gas passage openings 22 can be located in a thin-walled plate which is shaped into a ring and delimits a volume that is a first
- the end face is closed by a base plate 23 and is open to a second end face to the conveying line 9.
- FIG. 2 shows a pressure barrier 20, which is formed from an open-cell foam.
- the gas passage openings act 22 as a pressure barrier.
- it is the channels formed by the pores in the solid foam.
- FIG. 3 shows an alternative concept for solving the problem.
- Diffusion barriers 25 are provided with which the transverse diffusion described above is avoided. These can be concentric tubes which divide the delivery line 9 into separate flow channels.
- the diffusion influencing means 25 can extend over the entire length of the delivery line 9, the diameter of which is in particular smaller than a mean diameter of a flow path within the gas mixing device 1 and / or smaller than a cross-sectional area of the gas distribution volume 11.
- the gas flow emerging from the gas mixing device 1 is accelerated upon entry into the delivery line 9 in such a way that the gas temperature decreases in the center of the gas flow.
- the temperature difference of the gas flow at the edge of the delivery line 9 is so small that the inhomogeneous layer growth is avoided or is restricted to a tolerable minimum.
- the temperature gradient or a gradient of the shear forces in the flow cannot be reduced to 100%, but the gradient can be limited to a size at which its technological relevance is no longer applicable, ie layers are deposited whose unevenness is below a specified limit value, so that the result is technologically acceptable.
- the above explanations serve to explain the inventions covered by the application as a whole, which develop the state of the art independently at least by means of the following combinations of features, whereby two, more or all of these combinations of features can also be combined, namely :
- a device which is characterized in that the conveying line 9 has such a cross-sectional area, diffusion influencing means 25 configured in this way, or a pressure barrier 20 is provided at its end facing the gas inlet element 1 in such a way that a pressure barrier 20 is provided in the cross-sectional center of the The diffusion of the organic molecules directed towards the conveying line 9 and causing a lateral inhomogeneous layer growth is at least inhibited, preferably prevented.
- a method or a device which is characterized in that the total pressure P3 in the delivery line 9, the mass flow of the mixture through the delivery line 9 and the diameter D of the delivery line 9 are selected so that the mean flow velocity v m is smaller than 40 m / s, 30 m / s, 20 m / s or preferably less than 10 m / s and / or that the total pressure PO in the gas distribution volume 11 is preferably less than 0.9 mbar, 0.6 mbar, 0.3 mbar or 0.1 mbar.
- a method or a device which are characterized by the following parameters:
- T temperature of the gas in the delivery line 9
- a method and apparatus that are characterized by at least two evaporation V orcardien 6 each for evaporating consisting of the organic molecules lacked in the carrier gas stream th aerosol particles, it being provided that the aerosol Parti angle of the mutually different organic molecules at different temperatures and / or at different total pressures who evaporated and / or fed into the gas mixing device in different inputs 2, 2 '.
- a method or a device which are characterized by a first temperature control device 26 with which the gas mixing device 1 is heated to a first temperature and by a second temperature control device 27 with which the conveying line is heated to a second temperature.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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KR1020227017913A KR20220091538A (ko) | 2019-10-29 | 2020-10-28 | 유기 층들을 증착하기 위한 방법 및 장치 |
JP2022523403A JP2022554100A (ja) | 2019-10-29 | 2020-10-28 | 有機層を堆積させる方法及び装置 |
EP20797760.4A EP4051820A1 (de) | 2019-10-29 | 2020-10-28 | Verfahren und vorrichtung zum abscheiden organischer schichten |
CN202080082942.2A CN115066513B (zh) | 2019-10-29 | 2020-10-28 | 用于沉积有机层的方法和设备 |
US17/773,344 US20220379341A1 (en) | 2019-10-29 | 2020-10-28 | Method and apparatus for depositing organic layers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102019129176.3A DE102019129176A1 (de) | 2019-10-29 | 2019-10-29 | Verfahren und Vorrichtung zum Abscheiden organischer Schichten |
DE102019129176.3 | 2019-10-29 |
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WO2021083956A1 true WO2021083956A1 (de) | 2021-05-06 |
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PCT/EP2020/080278 WO2021083956A1 (de) | 2019-10-29 | 2020-10-28 | Verfahren und vorrichtung zum abscheiden organischer schichten |
Country Status (7)
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US (1) | US20220379341A1 (de) |
EP (1) | EP4051820A1 (de) |
JP (1) | JP2022554100A (de) |
KR (1) | KR20220091538A (de) |
CN (1) | CN115066513B (de) |
DE (1) | DE102019129176A1 (de) |
WO (1) | WO2021083956A1 (de) |
Citations (7)
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DE19882556T1 (de) * | 1997-07-25 | 2000-07-06 | Seagate Technology | Verfahren und Vorrichtung zur Zonenschmierung von Magnetmedien |
US20110045196A1 (en) * | 2001-09-04 | 2011-02-24 | The Trustees Of Princeton University | Method and Apparatus for Depositing Material Using a Dynamic Pressure |
WO2012175128A1 (en) | 2011-06-22 | 2012-12-27 | Aixtron Se | Vapor deposition system and supply head |
US20140235012A1 (en) * | 2013-02-21 | 2014-08-21 | Universal Display Corporation | Deposition of patterned organic thin films |
DE102014106523A1 (de) | 2014-05-09 | 2015-11-12 | Aixtron Se | Vorrichtung und Verfahren zum Versorgen einer CVD- oder PVD-Beschichtungseinrichtung mit einem Prozessgasgemisch |
DE102014109196A1 (de) | 2014-07-01 | 2016-01-07 | Aixtron Se | Vorrichtung zum Erzeugen eines Dampfes aus einem festen oder flüssigen Ausgangsstoff für eine CVD- oder PVD-Einrichtung |
EP3396731A1 (de) * | 2017-04-10 | 2018-10-31 | Samsung Display Co., Ltd. | Vorrichtung und verfahren zur herstellung einer anzeigevorrichtung |
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WO2003020999A1 (en) * | 2001-09-04 | 2003-03-13 | The Trustees Of Princeton University | Process and apparatus for organic vapor jet deposition |
KR20060076714A (ko) * | 2004-12-28 | 2006-07-04 | 에이에스엠지니텍코리아 주식회사 | 원자층 증착기 |
US20070218200A1 (en) * | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle formation in a vapor distribution system |
US8485230B2 (en) * | 2011-09-08 | 2013-07-16 | Laor Consulting Llc | Gas delivery system |
KR101673016B1 (ko) * | 2013-08-27 | 2016-11-07 | 삼성디스플레이 주식회사 | 박막봉지 제조장치 및 이를 이용한 표시 장치의 제조방법 |
DE102014109194A1 (de) * | 2014-07-01 | 2016-01-07 | Aixtron Se | Vorrichtung und Verfahren zum Erzeugen eines Dampfes für eine CVD- oder PVD-Einrichtung |
DE102017112668A1 (de) * | 2017-06-08 | 2018-12-13 | Aixtron Se | Verfahren zum Abscheiden von OLEDs |
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2019
- 2019-10-29 DE DE102019129176.3A patent/DE102019129176A1/de active Pending
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2020
- 2020-10-28 JP JP2022523403A patent/JP2022554100A/ja active Pending
- 2020-10-28 KR KR1020227017913A patent/KR20220091538A/ko active Search and Examination
- 2020-10-28 US US17/773,344 patent/US20220379341A1/en active Pending
- 2020-10-28 CN CN202080082942.2A patent/CN115066513B/zh active Active
- 2020-10-28 EP EP20797760.4A patent/EP4051820A1/de active Pending
- 2020-10-28 WO PCT/EP2020/080278 patent/WO2021083956A1/de unknown
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US20110045196A1 (en) * | 2001-09-04 | 2011-02-24 | The Trustees Of Princeton University | Method and Apparatus for Depositing Material Using a Dynamic Pressure |
WO2012175128A1 (en) | 2011-06-22 | 2012-12-27 | Aixtron Se | Vapor deposition system and supply head |
US20140235012A1 (en) * | 2013-02-21 | 2014-08-21 | Universal Display Corporation | Deposition of patterned organic thin films |
DE102014106523A1 (de) | 2014-05-09 | 2015-11-12 | Aixtron Se | Vorrichtung und Verfahren zum Versorgen einer CVD- oder PVD-Beschichtungseinrichtung mit einem Prozessgasgemisch |
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US20220379341A1 (en) | 2022-12-01 |
KR20220091538A (ko) | 2022-06-30 |
CN115066513A (zh) | 2022-09-16 |
JP2022554100A (ja) | 2022-12-28 |
DE102019129176A1 (de) | 2021-04-29 |
EP4051820A1 (de) | 2022-09-07 |
CN115066513B (zh) | 2024-11-01 |
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