WO2021082015A1 - 芯片电极开窗的方法和芯片 - Google Patents

芯片电极开窗的方法和芯片 Download PDF

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WO2021082015A1
WO2021082015A1 PCT/CN2019/115159 CN2019115159W WO2021082015A1 WO 2021082015 A1 WO2021082015 A1 WO 2021082015A1 CN 2019115159 W CN2019115159 W CN 2019115159W WO 2021082015 A1 WO2021082015 A1 WO 2021082015A1
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layer
chip
functional layer
soluble
electrode
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PCT/CN2019/115159
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English (en)
French (fr)
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兰洋
沈健
姚国峰
王文轩
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深圳市汇顶科技股份有限公司
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Priority to CN201980002858.2A priority Critical patent/CN110998851B/zh
Priority to PCT/CN2019/115159 priority patent/WO2021082015A1/zh
Publication of WO2021082015A1 publication Critical patent/WO2021082015A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures

Definitions

  • the embodiments of the present application relate to the field of chips, and more specifically, to a method and a chip for opening a window of a chip electrode.
  • Chip electrode also called pad, refers to the electrical connection point drawn from the chip, and is the window through which the internal logic circuit of the chip is connected to the external logic circuit. Due to design and actual needs, the surface of many chips will also be covered with various functional layers. After covering the functional layers, it is often necessary to open the electrode area for external wiring connections.
  • the electrode area windowing technology usually uses an etching process to etch away the functional layers. If the functional layers are more and thicker, the time taken to etch all functional layers will be greatly increased, which will seriously reduce the mass production of chips. Capacity.
  • the embodiments of the present application provide a method and a chip for opening a window of a chip electrode, which can improve the efficiency of opening the electrode window, thereby increasing the production capacity of the chip.
  • a method for opening electrode windows of a chip including: preparing an i-th functional layer above the chip by using a photolithography process, the i-th functional layer does not cover the electrode opening area of the chip, wherein , I is a positive integer less than N, and N is an integer greater than 1; a soluble layer is used to fill the electrode window area of the chip; the N-1th functional layer above the chip and the flattened Above the electrode windowing area, a photolithography process is used to prepare the Nth functional layer above the chip, the Nth functional layer does not cover the electrode windowing area of the chip; a solvent is used to dissolve the dissolvable layer, The opening of the electrode of the chip is obtained.
  • the dissolvable layer is used to fill the electrode window area of the chip, which can fill in the surface unevenness caused by the preparation of the functional layer by the photolithography process, and at the same time protect the electrode;
  • a solvent that can dissolve the soluble layer is used to dissolve the soluble layer, and the opening of the electrode of the chip can be directly completed without using an etching process. Therefore, the technical solution of the embodiment of the present application greatly reduces the time for opening the electrode window, improves the efficiency of opening the electrode window, and thereby increases the production capacity of the chip.
  • using a photolithography process to prepare the i-th functional layer above the chip includes: using a photolithography process to prepare the first functional layer above the chip; Above the i-1th functional layer and the filled-in electrode window area, the i-th functional layer is prepared by a photolithography process, where i is greater than 1.
  • the soluble layer is a water-soluble soluble layer.
  • said using a dissolvable layer to fill the electrode window area of the chip includes: using the dissolvable layer to fill the upper surface of the chip to the i-th functional layer The electrode window area on the upper surface.
  • the soluble layer is a non-water-soluble soluble layer.
  • said using a dissolvable layer to fill the electrode window area of the chip includes: using the dissolvable layer to fill the upper surface of the i-1th functional layer above the chip The electrode window area to the upper surface of the i-th functional layer, where i is greater than 1.
  • said using a dissolvable layer to fill the electrode window area of the chip includes: covering the electrode window area and the i-th functional layer with the dissolvable layer Surface; use the solvent to remove the soluble layer on the surface of the i-th functional layer, so that the upper surface of the soluble layer and the upper surface of the i-th functional layer in the electrode window area The height difference is less than a predetermined threshold.
  • the functional layer is an optical functional layer.
  • the first to N-1 functional layers above the chip are optically transparent layers, optically opaque layers, optically refractive layers, band-pass filter layers, band-stop filter layers, or light polarizing layers.
  • the Nth functional layer is a microlens array.
  • the functional layer is a biological functional layer.
  • the biological function layer is a polyphenylalanine-lysine coating or a nucleic acid probe array.
  • another method for opening a chip electrode window including: preparing an i-th functional layer above the chip by a photolithography process, the i-th functional layer does not cover the electrode opening area of the chip, Wherein, i is a positive integer less than N-1, and N is an integer greater than 2; a soluble layer is used to fill the electrode window area of the chip; the N-2th functional layer above the chip is filled with Above the electrode window area, covering the N-1th functional layer above the chip; above the N-1th functional layer, a photolithography process is used to prepare the Nth functional layer above the chip Layer, the N-th functional layer does not cover the electrode windowing area; etching the part of the N-1th functional layer covering the electrode windowing area to make the N-1th layer functional The layer does not cover the opening area of the electrode; a solvent is used to dissolve the dissolvable layer to obtain the opening of the electrode of the chip.
  • the dissolvable layer is used to fill the electrode window area of the chip, which can fill in the surface unevenness caused by the preparation of the functional layer by the photolithography process, and at the same time protect the electrode;
  • a solvent that can dissolve the soluble layer is used to dissolve the soluble layer, and the opening of the electrode of the chip can be completed without etching all the functional layers through an etching process. Therefore, the technical solution of the embodiment of the present application reduces the time for opening the electrode window, improves the efficiency of opening the electrode window, and thereby increases the production capacity of the chip.
  • using a photolithography process to prepare the i-th functional layer above the chip includes: using a photolithography process to prepare the first functional layer above the chip; Above the i-1th functional layer and the filled-in electrode window area, the i-th functional layer is prepared by a photolithography process, where i is greater than 1.
  • the soluble layer is a water-soluble soluble layer.
  • said using a dissolvable layer to fill the electrode window area of the chip includes: using the dissolvable layer to fill the upper surface of the chip to the i-th functional layer The electrode window area on the upper surface.
  • the soluble layer is a non-water-soluble soluble layer.
  • said using a dissolvable layer to fill the electrode window area of the chip includes: using the dissolvable layer to fill the upper surface of the i-1th functional layer above the chip The electrode window area to the upper surface of the i-th functional layer, where i is greater than 1.
  • said using a dissolvable layer to fill the electrode window area of the chip includes: covering the electrode window area and the i-th functional layer with the dissolvable layer Surface; use the solvent to remove the soluble layer on the surface of the i-th functional layer, so that the upper surface of the soluble layer and the upper surface of the i-th functional layer in the electrode window area The height difference is less than a predetermined threshold.
  • the functional layer is an optical functional layer.
  • the first to N-1 functional layers above the chip are optically transparent layers, optically opaque layers, optically refractive layers, band-pass filter layers, band-stop filter layers, or light polarizing layers.
  • the Nth functional layer is a microlens array.
  • the functional layer is a biological functional layer.
  • the biological function layer is a polyphenylalanine-lysine coating or a nucleic acid probe array.
  • the etching includes: dry etching, wet etching, and laser etching.
  • the dry etching includes plasma etching, ion milling etching, and reactive ion etching.
  • a chip provided with an electrode window prepared according to the method described in the first aspect or any one of the possible implementation manners of the first aspect, or, according to the second aspect or In the second aspect, the opening of the electrode prepared by the method described in any one of the possible implementation modes.
  • Fig. 1A is a schematic cross-sectional view of a chip before an electrode window is opened.
  • Fig. 1B is a schematic cross-sectional view of the chip after opening the electrode window.
  • FIG. 2 is a schematic flowchart of a method for opening a window of a chip electrode according to an embodiment of the present application.
  • 3A to 3E are schematic structural diagrams of staged products in a method for opening a chip electrode window according to an embodiment of the present application.
  • 4A to 4E are schematic structural diagrams of phased products in a method for opening a chip electrode window according to an embodiment of the present application.
  • FIG. 5 is a schematic flowchart of another method for opening a window of a chip electrode according to an embodiment of the present application.
  • 6A to 6F are schematic structural diagrams of phased products in the process of another method for opening a chip electrode window according to an embodiment of the present application.
  • FIGS. 7A to 7G are schematic structural diagrams of staged products in the process of another method for opening a chip electrode window according to an embodiment of the present application.
  • FIGS. 8A to 8G are schematic structural diagrams of phased products in the process of another method for opening a chip electrode window according to an embodiment of the present application.
  • the embodiments of the application are applicable to various chips, for example, the surface is covered with a light transparent layer, a light opaque layer (vinyl), a light refraction layer, a band pass filter layer, a band stop filter layer, a light polarizing layer, and a micro lens Complementary Metal-Oxide-Semiconductor Transistor (CMOS) and Charge Coupled Device (CCD) image sensor chips with functional layers such as arrays, covered with polyphenylalanine-lysine coating Biochips with functional layers such as layers, nucleic acid probe arrays, etc., and other chips whose surfaces need to be covered with functional layers.
  • CMOS Complementary Metal-Oxide-Semiconductor Transistor
  • CCD Charge Coupled Device
  • the embodiment of the present application takes an image sensor chip covered with a functional layer as an example.
  • the functional layer may specifically include a filter layer (Filter), a light guide layer (also called a light path guide structure), and other optical elements.
  • the light guide layer may specifically be a collimator (Collimator) layer fabricated on a semiconductor silicon wafer, which has a plurality of collimator units or a micro-hole array.
  • the light guide layer may also be an optical lens (Lens) layer, which has one or more lens units, such as a lens group composed of one or more aspheric lenses.
  • the light guide layer may also specifically adopt a micro-lens (Micro-Lens) layer, and the micro-lens layer has a micro-lens array formed by a plurality of micro-lens.
  • Figures 1A and 1B show a schematic cross-sectional view of a chip before and after the opening of the electrode window.
  • the image sensor chip includes a silicon substrate layer 100, a passivation layer 200, a chip electrode 201 embedded in the passivation layer 200, a first functional layer 300 (first optical functional layer), and a second The functional layer 400 (second optical functional layer), and a microlens array 500 for optical path modulation.
  • the silicon substrate layer 100 includes a substrate and internal logic circuits.
  • the area above the electrode is selectively etched, where the arrow direction represents the direction in which the first optical function layer 300 and the second optical function layer 400 are etched by an etching method.
  • the area selective etching is a mask exposure process and an etching process in semiconductor manufacturing.
  • the process of removing the thin film layer that is not masked by the resist thereby obtaining exactly the same pattern on the thin film as that on the resist film.
  • the required pattern is copied on the resist film, or the electron beam is directly drawn on the resist film to produce the pattern, and then the pattern is accurate
  • the ground is transferred to the dielectric film (such as silicon oxide, silicon nitride, polysilicon) or metal film (such as aluminum and its alloys) under the resist to produce the desired thin layer pattern.
  • Etching is to use chemical, physical or both chemical and physical methods to selectively remove the part of the film layer that is not masked by the resist, so as to obtain a pattern on the film that is exactly the same as that on the resist film.
  • the etching technology is mainly divided into dry etching and wet etching. Dry etching mainly uses reactive gas and plasma for etching; wet etching mainly uses chemical reagents to react with the material to be etched for etching.
  • the above-mentioned method for opening the chip electrode window is usually to etch away the functional layer by an etching process. If the functional layer is more and thicker, the etching time will be greatly increased, and the mass production capacity of the chip will be seriously reduced.
  • the embodiment of the present application provides a method for opening a chip electrode window, which can shorten the electrode window opening time, improve the efficiency of electrode window opening, and thereby increase chip productivity.
  • FIG. 2 shows a schematic flowchart of a method 800 for opening a chip electrode window according to an embodiment of the present application.
  • N is the total number of functional layers.
  • the N is an integer greater than 1, that is, the functional layer has at least 2 layers, and may have 3 layers, or even more layers.
  • the i-th functional layer is any functional layer other than the N-th functional layer, that is, any one of the first to N-1 functional layers. For example, if the functional layer is 2 layers, and the i is 1, the first functional layer is prepared by a photolithography process; if the functional layer is 3 layers, and the i is 1 or 2, then a photolithography process can be used Prepare each of the first functional layer and the second functional layer above the chip.
  • the photolithography process is a step in the semiconductor manufacturing process. This step uses exposure and development to describe the geometric pattern structure on the photoresist layer, and then transfers the pattern on the photomask to the substrate through the etching process. on.
  • the substrate mentioned here includes not only silicon wafers, but also other metal layers and dielectric layers.
  • the dissolvable layer is used to fill the electrode window area to facilitate the preparation of the next layer above this layer.
  • the dissolvable layer may be used to cover the electrode window area and the upper surface of the i-th functional layer; a solvent is used to remove the dissolvable layer on the surface of the i-th functional layer, so that The height difference between the upper surface of the dissolvable layer and the upper surface of the i-th functional layer in the electrode window area is smaller than a predetermined threshold.
  • the predetermined threshold may be 0.5 ⁇ m.
  • the predetermined threshold may also be other suitable numerical values, which are not limited in the embodiment of the present application.
  • the dissolvable layer may be used to cover only the electrode window area, so that the upper surface of the dissolvable layer in the electrode window area It is sufficient that the height difference with the upper surface of the i-th functional layer is less than a predetermined threshold. Ideally, the upper surface of the dissolvable layer in the electrode window area is consistent with the height of the functional layer, that is, the height difference is negligible.
  • a photolithography process is used to prepare the first functional layer above the chip; the i-1th functional layer above the chip and the top of the filled-in electrode window area are photo-etched.
  • the i-th functional layer is prepared by an engraving process.
  • the functional layer is three layers
  • a photolithography process is used to prepare the first functional layer
  • a soluble layer is used to fill the electrode opening area
  • the first functional layer and the filled electrode are opened.
  • the second functional layer is prepared by a photolithography process, and a dissolvable layer is used to fill the electrode window area.
  • the technical solution of the embodiment of the present application uses a dissolvable layer to fill the electrode window area of the chip, which can fill up the surface unevenness caused by the preparation of the functional layer, and at the same time protect the electrode; use
  • the solvent that can dissolve the soluble layer can dissolve the soluble layer, and the opening of the electrode of the chip can be directly completed without using an etching process, which greatly reduces the time for the electrode to open the window. Therefore, the technical solution of the embodiment of the present application improves the efficiency of opening the electrode window, thereby increasing the production capacity of the chip.
  • the functional layer is an optical functional layer.
  • the first to N-1 functional layers above the chip may be a light transparent layer, a light opaque layer, a light refraction layer, a band pass filter layer, a band stop filter layer, or a light polarizing layer;
  • the functional layer may be a microlens array.
  • the optical functional layer may also be a functional layer with other functions, which is not limited in the embodiment of the present application.
  • the soluble layer is a water-soluble soluble layer.
  • the solvent is a solvent that can dissolve the water-soluble soluble layer, such as a water solvent.
  • the photolithography process includes a development step
  • the developer used in the development step can dissolve the soluble layer.
  • the use of the dissolvable layer to fill the electrode window area of the chip is specifically: the use of the dissolvable layer to fill the upper surface of the chip to the top of the i-th functional layer The electrode window area on the surface.
  • 3A, 3B, 3C, 3D, and 3E show schematic cross-sectional views of image sensor chips corresponding to different steps of a method for opening a chip window according to an embodiment of the present application.
  • the soluble layer is a water-soluble soluble layer. The specific implementation steps are as follows:
  • Step 1 As shown in Figure 3A. First, a photolithography process is used to prepare the first optical function layer 300 above the chip, and the electrode 201 will not cover the first optical function layer 300 at this time. Then, the soluble layer 301 is used to fill in the surface unevenness caused by the preparation of the first optical function layer 300, and at the same time, it protects the electrode 201.
  • Step 2 As shown in Figure 3B.
  • a second optical function layer 400 having the same pattern and size as the first optical function layer 300 is prepared above the first optical function layer 300 and the filled-in electrode window area using a photolithography process. Since the soluble layer 301 is a water-soluble material, when the second optical functional layer 400 is prepared, the soluble layer 301 is dissolved by the developer used in the photolithography process.
  • Step 3 As shown in Figure 3C. Use the soluble layer 301 to fill in the surface unevenness due to the preparation of the second optical function layer 400 again, that is, use the soluble layer 301 to fill in the upper surface of the chip to the second optical function layer 400 The electrode window area on the upper surface.
  • Step 4 As shown in Figure 3D.
  • the microlens array 500 is prepared by a photolithography process, and the prepared area is generally located in the pixel area of the image sensor, and the pixel area is generally a non-electrode windowed area. Since the soluble layer 301 is a water-soluble material, the soluble layer 301 is dissolved by the developer used in the photolithography process.
  • the dissolvable layer 301 has been dissolved.
  • the shape of the microlens array 500 has not yet transformed into a hemispherical shape, so its cross-sectional view is as shown in Figure 3D. Show.
  • the photoresist thermal reflow technology is a commonly used microlens array manufacturing technology, which is widely used in the manufacture of microlens arrays, and will not be repeated here.
  • Step 5 As shown in Figure 3E. Since the soluble layer 301 has been dissolved, the opening of the electrode 201 of the chip is completed. At this time, only the microlens array 500 needs to be subjected to a photoresist thermal reflow process to complete the entire solution process.
  • the soluble layer is a non-water-soluble soluble layer.
  • the solvent is a solvent that can dissolve the non-water-soluble soluble layer.
  • the soluble layer is a water-insoluble soluble layer
  • the developer used in the photolithography process will not degrade the water-insoluble soluble layer.
  • the dissolving layer dissolves.
  • the use of the dissolvable layer to fill the electrode window area of the chip is specifically: the use of the dissolvable layer to fill the upper surface of the i-1th functional layer above the chip to In the electrode window area on the upper surface of the i-th functional layer, i is greater than 1.
  • 4A, 4B, 4C, 4D, and 4E show schematic cross-sectional views of image sensor chips corresponding to different steps of another method for windowing a chip in an embodiment of the present application.
  • the specific implementation steps are as follows:
  • Step 1 As shown in Figure 4A. First, a photolithography process is used to prepare the first optical function layer 300 above the chip, and the electrode 201 will not cover the first optical function layer 300 at this time. Then, the soluble layer 301 is used to fill in the surface unevenness caused by the preparation of the first optical function layer 300, and at the same time, it protects the electrode 201.
  • Step 2 As shown in Figure 4B.
  • a second optical function layer 400 having the same pattern and size as the first optical function layer 300 is prepared above the first optical function layer 300 and the filled-in electrode window area using a photolithography process, the dissolvable layer 301 The upper part will not cover the second optical function layer 400. Since the soluble layer 301 is a water-insoluble material, when preparing the second optical functional layer 400, the soluble layer 301 will not be dissolved by the developer used in the photolithography process.
  • Step 3 As shown in Figure 4C. Use the soluble layer 301 to continue to fill in the surface unevenness due to the preparation of the second optical function layer 400, that is, use the soluble layer 301 to fill in the upper surface of the first optical function layer 300 above the chip To the electrode window area on the upper surface of the second optical function layer 400.
  • Step 4 As shown in Figure 4D.
  • the microlens array 500 is prepared by a photolithography process, and the prepared area is generally located in the pixel area of the image sensor, and the pixel area is generally a non-electrode windowed area.
  • Step 5 As shown in Figure 4E. A solvent that can dissolve the soluble layer 301 is used to dissolve the soluble layer 301. After the dissolvable layer 301 is dissolved, the opening of the electrode 201 of the chip is completed.
  • the functional layer may also be a non-optical functional layer.
  • the functional layer is a biological functional layer.
  • the biological function layer may be a polyphenylalanine-lysine coating or a nucleic acid probe array.
  • the biological functional layer may also be a functional layer with other functions, which is not limited in the embodiment of the present application.
  • the embodiment of the present application provides another method for opening the electrode window of the chip, which can shorten the time of opening the electrode window, improve the efficiency of opening the electrode window, and thereby increase the productivity of the chip.
  • FIG. 5 shows a schematic flowchart of a method 900 for opening a chip electrode window according to an embodiment of the present application.
  • N is the total number of functional layers. If the N is an integer greater than 2, the functional layer has at least 3 layers.
  • the i-th functional layer is any one of the first to N-2 functional layers. For example, when the functional layer is 3 layers, the i is 1; when the functional layer is 4 layers, the i is 1 or 2.
  • the dissolvable layer is used to fill the electrode window area to facilitate the preparation of the next layer above this layer.
  • the dissolvable layer may be used to cover the electrode window area and the upper surface of the i-th functional layer; a solvent is used to remove the dissolvable layer on the surface of the i-th functional layer, so that The height difference between the upper surface of the dissolvable layer and the upper surface of the i-th functional layer in the electrode window area is smaller than a predetermined threshold.
  • the predetermined threshold may be 0.5 ⁇ m.
  • the predetermined threshold may also be other suitable numerical values, which are not limited in the embodiment of the present application.
  • the dissolvable layer may be used to cover only the electrode window area, so that the upper surface of the dissolvable layer in the electrode window area It is sufficient that the height difference with the upper surface of the i-th functional layer is less than a predetermined threshold. Ideally, the upper surface of the dissolvable layer in the electrode window area is consistent with the height of the functional layer, that is, the height difference is negligible.
  • a photolithography process is used to prepare the first functional layer above the chip; the i-1th functional layer above the chip and the top of the filled-in electrode window area are photo-etched.
  • the i-th functional layer is prepared by an engraving process.
  • both the first functional layer and the second functional layer are prepared by photolithography.
  • N-1th functional layer On the N-1th functional layer, a photolithography process is used to prepare an Nth functional layer above the chip, and the Nth functional layer does not cover the electrode opening area.
  • the technical solution of the embodiment of the present application uses a dissolvable layer to fill up the electrode window area of the chip, which can fill up the surface unevenness caused by the preparation of the functional layer by the photolithography process, and at the same time, it has a good effect on the electrode.
  • Protective effect using a solvent that can dissolve the soluble layer to dissolve the soluble layer, and does not need to etch all the functional layers through an etching process to complete the opening of the electrode of the chip. Therefore, the technical solution of the embodiment of the present application reduces the time for opening the electrode window, improves the efficiency of opening the electrode window, and thereby increases the production capacity of the chip.
  • the number of layers of the functional layer prepared by covering can also be more than one layer, but the higher the ratio of the number of layers of the chip functional layer to the total number of functional layers by the photolithography process and the method of filling the soluble layer, Relatively speaking, the less time the chip takes to open the window, the higher the efficiency.
  • the N-1th functional layer can be prepared by a photolithography process, and the functional layer does not cover the chip Electrode window area.
  • the method of opening the window does not need to use an etching process to etch the functional layer, and the opening of the electrode can be completed directly by dissolving the soluble layer.
  • the functional layer is an optical functional layer.
  • the first to N-1 functional layers above the chip may be a light transparent layer, a light opaque layer, a light refraction layer, a band pass filter layer, a band stop filter layer, or a light polarizing layer;
  • the functional layer may be a microlens array.
  • the optical functional layer may also be a functional layer with other functions, which is not limited in the embodiment of the present application.
  • the soluble layer is a water-soluble soluble layer.
  • the solvent is a solvent that can dissolve the water-soluble soluble layer, such as a water solvent.
  • the photolithography process includes a development step
  • the developer used in the development step can dissolve the water-soluble soluble layer.
  • the use of the dissolvable layer to fill the electrode window area of the chip is specifically: the use of the dissolvable layer to fill the upper surface of the chip to the top of the i-th functional layer The electrode window area on the surface.
  • the soluble layer is a non-water-soluble soluble layer.
  • the solvent is a solvent that can dissolve the non-water-soluble soluble layer.
  • using the dissolvable layer to fill the electrode window area of the chip includes: using the dissolvable layer to fill the upper surface of the i-1th functional layer above the chip to all In the electrode window area on the upper surface of the i-th functional layer, i is greater than 1.
  • 6A, 6B, 6C, 6D, 6E, and 6F show schematic cross-sectional views of image sensor chips corresponding to different steps of another method for opening a chip window according to an embodiment of the present application.
  • the N is an integer greater than 2, that is, the number of layers of the functional layer is at least 3 layers, or 4 layers or even more layers.
  • the functional layer is three layers as an example.
  • the soluble layer is a water-soluble soluble layer or a non-water-soluble soluble layer.
  • Step 1 As shown in Figure 6A. First, a photolithography process is used to prepare the first optical function layer 300 above the chip, and the electrode 201 will not cover the first optical function layer 300 at this time.
  • Step 2 As shown in Figure 6B.
  • the dissolvable layer 301 is used to fill in the surface unevenness caused by the preparation of the first optical function layer 300, and at the same time, it protects the electrode 201.
  • Step 3 As shown in Figure 6C.
  • the second optical function layer 400 is covered on the first optical function layer 300 and the soluble layer 301.
  • Step 4 As shown in Figure 6D.
  • the microlens array 500 is prepared by a photolithography process, and the prepared area is generally located in the pixel area of the image sensor, and the pixel area is generally a non-electrode windowed area.
  • Step 5 As shown in Figure 6E.
  • the electrode window area is selectively etched on the second optical function layer 400, wherein the arrow direction represents the direction in which the second optical function layer 400 is etched by the etching method, and the etching depth is the second The thickness of the optical function layer 400 is etched to the soluble layer 301.
  • Step 6 As shown in Figure 6F.
  • a solvent that can dissolve the soluble layer 301 is used to dissolve the soluble layer 301. After the dissolvable layer 301 is dissolved, the opening of the electrode 201 of the chip is completed.
  • the soluble layer is water-soluble, dissolving with a solvent that can dissolve the water-soluble soluble layer can complete the opening of the electrode.
  • the soluble layer is water-insoluble, dissolving it with a solvent that can dissolve the water-insoluble soluble layer can complete the opening of the electrode.
  • 7A, 7B, 7C, 7D, 7E, 7F, and 7G show schematic cross-sectional views of image sensor chips corresponding to different steps of another method for chip windowing in an embodiment of the present application.
  • the functional layer has 4 layers as an example, and the soluble layer is a water-soluble soluble layer.
  • the image sensor chip includes a first optical function layer 300, a second optical function layer 400, a third optical function layer 600, a microlens array 500, a passivation layer 200, a chip electrode 201, and a silicon substrate layer 100 of the chip.
  • Step 1 As shown in Figure 7A. First, a photolithography process is used to prepare the first optical function layer 300 above the chip, and the electrode 201 will not cover the first optical function layer 300 at this time. Then, the soluble layer 301 is used to fill in the surface unevenness caused by the preparation of the first optical function layer 300, and at the same time, it protects the electrode 201.
  • Step 2 As shown in Figure 7B.
  • the second optical function layer 400 having the same pattern and size as the first optical function layer 300 is prepared on the first optical function layer 300 and the soluble layer 301 by using a photolithography process. Since the dissolvable layer 301 is a water-soluble material, when the second optical function layer 400 is prepared, the dissolvable layer 301 in the electrode window area of the chip is dissolved by the developer used in the photolithography process.
  • Step 3 As shown in Figure 7C. Use the soluble layer 301 to fill in the surface unevenness due to the preparation of the second optical function layer 400 again, that is, use the soluble layer 301 to fill in the upper surface of the chip to the second optical function layer 400 The electrode window area on the upper surface.
  • Step 4 As shown in Figure 7D.
  • the third optical function layer 600 is covered on the second optical function layer 400 and the soluble layer 301.
  • Step 5 As shown in Figure 7E.
  • the microlens array 500 is prepared by a photolithography process, and the prepared area is generally located in the pixel area of the image sensor, and the pixel area is generally a non-electrode windowed area.
  • Step 6 As shown in Figure 7F.
  • the electrode window area is selectively etched on the third optical function layer 600, where the arrow direction represents the direction in which the third optical function layer 600 is etched by the etching method, and the etching depth is the third optical function
  • the thickness of the layer 600 is etched to the soluble layer 301.
  • Step 7 As shown in Figure 7G. A solvent that can dissolve the water-soluble soluble layer 301 is used to dissolve the soluble layer 301. After the dissolvable layer 301 is dissolved, the opening of the electrode 201 of the chip is completed.
  • 8A, 8B, 8C, 8D, 8E, 8F, and 8G show schematic cross-sectional views of image sensor chips corresponding to different steps of another method of chip windowing in an embodiment of the present application.
  • the functional layer has 4 layers as an example, and the dissolvable layer is a non-water-soluble dissolvable layer.
  • Step 1 As shown in Figure 8A. First, a photolithography process is used to prepare the first optical function layer 300 above the chip, and the electrode 201 will not cover the first optical function layer 300 at this time. Then, the soluble layer 301 is used to fill in the surface unevenness caused by the preparation of the first optical function layer 300, and at the same time, it protects the electrode 201.
  • Step 2 As shown in Figure 8B.
  • the second optical function layer 400 with the same pattern and size as the first optical function layer 300 is prepared by using a photolithography process on the first optical function layer 300, and the second optical function layer 400 will not be covered by the upper part 301 of the dissolvable layer. Since the soluble layer 301 is a water-insoluble material, when the second optical functional layer 400 is prepared, the soluble layer 301 will not be dissolved by the developer used in the photolithography process.
  • Step 3 As shown in Figure 8C. Use the soluble layer 301 to continue to fill in the surface unevenness due to the preparation of the second optical function layer 400, that is, use the soluble layer 301 to fill in the upper surface of the first optical function layer 300 above the chip To the electrode window area on the upper surface of the second optical function layer 400.
  • Step 4 As shown in Figure 8D. A third optical function layer 600 is covered on the second optical function layer 400 and the soluble layer 301.
  • Step 5 As shown in Figure 8E.
  • the microlens array 500 is prepared by a photolithography process, and the prepared area is generally located in the pixel area of the image sensor, and the pixel area is generally a non-electrode windowed area.
  • Step 6 As shown in Figure 8F.
  • the electrode window area is selectively etched on the third optical function layer 600, where the arrow direction represents the direction in which the third optical function layer 600 is etched by the etching method, and the etching depth is the third The thickness of the optical function layer 600 is etched to the soluble layer 301.
  • Step 7 As shown in Figure 8G. A solvent that can dissolve the water-insoluble soluble layer 301 is used to dissolve the soluble layer 301. After the dissolvable layer 301 is dissolved, the opening of the electrode 201 of the chip is completed.
  • the functional layer may also be a non-optical functional layer.
  • the functional layer may be a biological functional layer.
  • the biological function layer may be a polyphenylalanine-lysine coating or a nucleic acid probe array.
  • the biological functional layer may also be a functional layer with other functions, which is not limited in the embodiment of the present application.
  • the etching method may be dry etching, wet etching, laser etching, or other etching methods.
  • the dry etching may be plasma etching, ion milling etching, and reactive ion etching.
  • An embodiment of the present application also provides a chip provided with an opening window of the electrode prepared according to the above method.
  • the disclosed method for opening the chip electrode and the chip can also be implemented in other ways.
  • the above-described embodiment of the method for opening a window of the chip electrode is only exemplary.
  • the number of layers of the functional layer, the number of layers of the functional layer prepared by a photolithography process, and the type of the functional layer may be implemented in other ways in actual implementation.

Abstract

本申请实施例公开了一种芯片电极开窗的方法和芯片，所述方法包括：采用光刻工艺制备芯片上方的第i层功能层，所述第i层功能层不覆盖所述芯片的电极开窗区域，其中，i为小于N的正整数，N为大于1的整数；采用可溶解层填平所述芯片的电极开窗区域；在所述芯片上方的第N-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述芯片上方的第N层功能层，所述第N层功能层不覆盖所述芯片的电极开窗区域；使用溶剂溶解所述可溶解层，得到所述芯片的电极的开窗。本申请实施例的技术方案，能够提高电极开窗效率，从而提高芯片产能。

Description

芯片电极开窗的方法和芯片 技术领域
本申请实施例涉及芯片领域，并且更具体地，涉及一种芯片电极开窗的方法和芯片。
背景技术
芯片电极(Pad)，也称焊盘，是指从芯片上引出的电气连接点，是芯片内部逻辑电路与外部逻辑电路连接的窗口。由于设计和实际需要，很多芯片表面还会覆盖各种功能层，在覆盖完所述功能层之后，往往需要将电极区域打开，以便进行外部打线连接。
目前，电极区域开窗技术通常是用刻蚀工艺将所述功能层刻蚀掉，如果功能层较多并且较厚，则刻蚀所有功能层所耗时间将大大增加，严重降低芯片的量产产能。
发明内容
本申请实施例提供了一种芯片电极开窗的方法和芯片，能够提高电极开窗效率，从而提高芯片产能。
第一方面，提供了一种芯片电极开窗的方法，包括：采用光刻工艺制备芯片上方的第i层功能层，所述第i层功能层不覆盖所述芯片的电极开窗区域，其中，i为小于N的正整数，N为大于1的整数；采用可溶解层填平所述芯片的电极开窗区域；在所述芯片上方的第N-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述芯片上方的第N层功能层，所述第N层功能层不覆盖所述芯片的电极开窗区域；使用溶剂溶解所述可溶解层，得到所述芯片的电极的开窗。
基于上述技术方案，采用可溶解层填平所述芯片的电极开窗区域，可以填平由于采用光刻工艺制备所述功能层所带来的表面不平整性，同时对电极起到保护作用；使用可使所述可溶解层溶解的溶剂来溶解所述可溶解层，不需要采用刻蚀工艺就可直接完成所述芯片的电极的开窗。因此，本申请实施例的技术方案极大地减少了电极开窗的时间，提高了电极开窗的效率，从而提高了芯片产能。
在一些可能实现的方式中，所述采用光刻工艺制备芯片上方的第i层功能层，包括：在所述芯片的上方，采用光刻工艺制备第1层功能层；在所述芯片上方的第i-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述第i层功能层，其中，i大于1。
在一些可能实现的方式中，所述可溶解层为水溶性可溶解层。
在一些可能实现的方式中，所述采用可溶解层填平所述芯片的电极开窗区域，包括：采用所述可溶解层填平所述芯片的上表面至所述第i层功能层的上表面的电极开窗区域。
在一些可能实现的方式中，所述可溶解层为非水溶性可溶解层。
在一些可能实现的方式中，所述采用可溶解层填平所述芯片的电极开窗区域，包括：采用所述可溶解层填平所述芯片上方的第i-1层功能层的上表面至所述第i层功能层的上表面的电极开窗区域，其中，i大于1。
在一些可能实现的方式中，所述采用可溶解层填平所述芯片的电极开窗区域，包括：采用所述可溶解层覆盖所述电极开窗区域和所述第i层功能层的上表面；使用所述溶剂去除所述第i层功能层表面的所述可溶解层，以使所述电极开窗区域中所述可溶解层的上表面与所述第i层功能层的上表面的高度差小于预定阈值。
在一些可能实现的方式中，所述功能层为光学功能层。
在一些可能实现的方式中，所述芯片上方的第1至N-1层功能层为光透明层、光不透明层、光折射层、带通滤光层、带阻滤光层或者光偏振层；所述第N层功能层为微透镜阵列。
在一些可能实现的方式中，所述功能层为生物功能层。
在一些可能实现的方式中，所述生物功能层为多聚苯丙氨酸-赖氨酸涂层或核酸探针阵列。
第二方面，提供了另一种芯片电极开窗的方法，包括：采用光刻工艺制备芯片上方的第i层功能层，所述第i层功能层不覆盖所述芯片的电极开窗区域，其中，i为小于N-1的正整数，N为大于2的整数；采用可溶解层填平所述芯片的电极开窗区域；在所述芯片上方的第N-2层功能层和填平的所述电极开窗区域的上方，覆盖所述芯片上方的第N-1层功能层；在所述第N-1层功能层上方，采用光刻工艺制备所述芯片上方的第N层功能层，所述第N层功能层不覆盖所述电极开窗区域；刻蚀所述第N-1层功能层的覆盖所 述电极开窗区域的部分，以使所述第N-1层功能层不覆盖所述电极开窗区域；使用溶剂溶解所述可溶解层，得到所述芯片的电极的开窗。
基于上述技术方案，采用可溶解层填平所述芯片的电极开窗区域，可以填平由于采用光刻工艺制备所述功能层所带来的表面不平整性，同时对电极起到保护作用；使用可使所述可溶解层溶解的溶剂来溶解所述可溶解层，不需要通过刻蚀工艺来刻蚀全部的功能层就可完成所述芯片的电极的开窗。因此，本申请实施例的技术方案减少了电极开窗的时间，提高了电极开窗的效率，从而提高了芯片产能。
在一些可能实现的方式中，所述采用光刻工艺制备芯片上方的第i层功能层，包括：在所述芯片的上方，采用光刻工艺制备第1层功能层；在所述芯片上方的第i-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述第i层功能层，其中，i大于1。
在一些可能实现的方式中，所述可溶解层为水溶性可溶解层。
在一些可能实现的方式中，所述采用可溶解层填平所述芯片的电极开窗区域，包括：采用所述可溶解层填平所述芯片的上表面至所述第i层功能层的上表面的电极开窗区域。
在一些可能实现的方式中，所述可溶解层为非水溶性可溶解层。
在一些可能实现的方式中，所述采用可溶解层填平所述芯片的电极开窗区域，包括：采用所述可溶解层填平所述芯片上方的第i-1层功能层的上表面至所述第i层功能层的上表面的电极开窗区域，其中，i大于1。
在一些可能实现的方式中，所述采用可溶解层填平所述芯片的电极开窗区域，包括：采用所述可溶解层覆盖所述电极开窗区域和所述第i层功能层的上表面；使用所述溶剂去除所述第i层功能层表面的所述可溶解层，以使所述电极开窗区域中所述可溶解层的上表面与所述第i层功能层的上表面的高度差小于预定阈值。
在一些可能实现的方式中，所述功能层为光学功能层。
在一些可能实现的方式中，所述芯片上方的第1至N-1层功能层为光透明层、光不透明层、光折射层、带通滤光层、带阻滤光层或者光偏振层；所述第N层功能层为微透镜阵列。
在一些可能实现的方式中，所述功能层为生物功能层。
在一些可能实现的方式中，所述生物功能层为多聚苯丙氨酸-赖氨酸涂 层或核酸探针阵列。
在一些可能实现的方式中，所述刻蚀包括：干法刻蚀、湿法刻蚀和激光刻蚀。
在一些可能实现的方式中，所述干法刻蚀包括：等离子刻蚀、离子铣刻蚀和反应离子刻蚀。
第三方面，提供了一种芯片，所述芯片设置有按照第一方面或第一方面中任一种可能实现的方式中所述的方法制备的电极的开窗，或者，按照第二方面或第二方面中任一种可能实现的方式中所述的方法制备的电极的开窗。
附图说明
图1A是一种电极开窗前的芯片截面示意图。
图1B是一种电极开窗完成后的芯片截面示意图。
图2是本申请实施例的一种芯片电极开窗的方法的示意流程图。
图3A至图3E是本申请实施例的一种芯片电极开窗的方法过程中阶段性产品的示意性结构图。
图4A至图4E是本申请实施例的一种芯片电极开窗的方法过程中阶段性产品的示意性结构图。
图5是本申请实施例的另一种芯片电极开窗的方法的示意流程图。
图6A至图6F是本申请实施例的另一种芯片电极开窗的方法过程中阶段性产品的示意性结构图。
图7A至图7G是本申请实施例的另一种芯片电极开窗的方法过程中阶段性产品的示意性结构图。
图8A至图8G是本申请实施例的另一种芯片电极开窗的方法过程中阶段性产品的示意性结构图。
具体实施方式
下面将结合附图，对本申请实施例中的技术方案进行描述。
本申请实施例适用于各种芯片，例如，表面覆盖有光透明层、光不透明层(黑胶)、光折射层、带通滤光层、带阻滤光层、光偏振层、以及微透镜阵列等功能层的互补金属氧化物半导体(Complementary Metal-Oxide-Semiconductor Transistor，CMOS)与电荷耦合器件(Charge  Coupled Device，CCD)图像传感器芯片，表面覆盖有多聚苯丙氨酸-赖氨酸涂层、核酸探针阵列等功能层的生物芯片以及其他表面需要覆盖功能层的芯片。本申请对此不做具体限定。此外，本申请实施例的技术方案可以应用于各种电子设备。例如，智能手机、笔记本电脑、平板电脑、游戏设备等便携式或移动计算设备，以及电子数据库、汽车、银行自动柜员机(Automated Teller Machine，ATM)等其他电子设备。但本申请实施例对此并不限定。
需要说明的是，为便于说明，在本申请的实施例中，相同的附图标记表示相同的部件，并且为了简洁，在不同实施例中，省略对相同部件的详细说明。应理解，附图示出的本申请实施例中的各种部件的厚度、长宽等尺寸，以及集成装置的整体厚度、长宽等尺寸仅为示例性说明，而不应对本申请构成任何限定。
本申请实施例以表面覆盖有功能层的图像传感器芯片为例。所述功能层可以具体包括滤光层(Filter)、导光层(也称光路引导结构)、以及其他光学元件。所述导光层可以具体为在半导体硅片制作而成的准直器(Collimator)层，其具有多个准直单元或者微孔阵列。所述导光层也可以为光学透镜(Lens)层，其具有一个或多个透镜单元，比如一个或多个非球面透镜组成的透镜组。所述导光层也可以具体采用微透镜(Micro-Lens)层，所述微透镜层具有由多个微透镜形成的微透镜阵列。
图1A和图1B出示了一种电极开窗前和开窗完成后的芯片截面示意图。
如图1A所示，所述图像传感器芯片包括硅衬底层100、钝化层200、嵌入所述钝化层200中的芯片电极201、第1功能层300(第1光学功能层)、第2功能层400(第2光学功能层)、用于光路调制的微透镜阵列500。所述硅衬底层100包含衬底以及内部逻辑电路。
如图1B所示，对电极上方区域进行选择性刻蚀，其中箭头方向代表利用刻蚀方法对所述第1光学功能层300和第2光学功能层400进行刻蚀的方向。所述区域选择性刻蚀为半导体制造中的掩膜曝光工艺与刻蚀工艺。
具体而言，把未被抗蚀剂掩蔽的薄膜层除去，从而在薄膜上得到与抗蚀剂膜上完全相同图形的工艺。在集成电路制造过程中，经过掩模套准、曝光和显影，在抗蚀剂膜上复印出所需的图形，或者用电子束直接描绘在抗蚀剂膜上产生图形，然后把此图形精确地转移到抗蚀剂下面的介质薄膜(如氧化硅、氮化硅、多晶硅)或金属薄膜(如铝及其合金)上去，制造出所需的薄 层图案。刻蚀就是用化学的、物理的或同时使用化学和物理的方法，有选择地把没有被抗蚀剂掩蔽的那一部分薄膜层除去，从而在薄膜上得到和抗蚀剂膜上完全一致的图形。刻蚀技术主要分为干法刻蚀与湿法刻蚀。干法刻蚀主要利用反应气体与等离子体进行刻蚀；湿法刻蚀主要利用化学试剂与被刻蚀材料发生化学反应进行刻蚀。
上述芯片电极开窗的方法通常是用刻蚀工艺将所述功能层刻蚀掉，如果功能层较多较厚，则刻蚀所耗时间将大大增加，严重降低芯片量产产能。
本申请实施例提供了一种芯片电极开窗的方法，可缩短电极开窗时间，提高电极开窗的效率，从而提高芯片产能。
图2出示了本申请实施例的芯片电极开窗的方法800的示意流程图。
810，采用光刻工艺制备芯片上方的第i层功能层，所述第i层功能层不覆盖所述芯片的电极开窗区域，其中，i为小于N的正整数，N为大于1的整数。
由下文可知，N为功能层的总层数。所述N为大于1的整数，即所述功能层至少为2层，可以为3层，甚至更多层。第i层功能层为除了第N层功能层外的任一层功能层，即第1至N-1层功能层中的任一层功能层。例如，所述功能层为2层，所述i为1，则采用光刻工艺制备第1层功能层；所述功能层为3层，所述i为1或2，则可以采用光刻工艺制备芯片上方的第1层功能层和第2层功能层中的每一层。
应理解，所述光刻工艺是半导体制造工艺中一个步骤，该步骤利用曝光和显影在光刻胶层上刻画几何图形结构，然后通过刻蚀工艺将光掩模上的图形转移到所在衬底上。这里所说的衬底不仅包含硅晶圆，还可以是其他金属层、介质层。
820，采用可溶解层填平所述芯片的电极开窗区域。
由于第i层功能层不覆盖电极开窗区域，采用可溶解层填平电极开窗区域便于在该层上方制备下一层。
可选地，可以采用所述可溶解层覆盖所述电极开窗区域和所述第i层功能层的上表面；使用溶剂去除所述第i层功能层表面的所述可溶解层，以使所述电极开窗区域中所述可溶解层的上表面与所述第i层功能层的上表面的高度差小于预定阈值。例如，所述预定阈值可以为0.5μm。所述预定阈值也可以为其他合适的数值，本申请实施例对此并不限定。
应理解，所述利用可溶解层填平所述芯片的电极开窗区域，可以采用可溶解层仅覆盖所述电极开窗区域，使所述电极开窗区域中所述可溶解层的上表面与所述第i层功能层的上表面的高度差小于预定阈值即可。理想情况下，所述电极开窗区域中的所述可溶解层的上表面与所述功能层的高度一致，即所述高度差可忽略不计。
在i大于1时，采用上述方式重复制备每一层功能层，直至第N-1层功能层。
具体而言，在所述芯片的上方，采用光刻工艺制备第1层功能层；在所述芯片上方的第i-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述第i层功能层。
例如，所述功能层为3层时，采用光刻工艺制备第1层功能层，采用可溶解层填平电极开窗区域，在所述第1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述第2层功能层，采用可溶解层填平电极开窗区域。
830，在所述芯片上方的第N-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述芯片上方的第N层功能层，所述第N层功能层不覆盖所述芯片的电极开窗区域。
840，使用溶剂溶解所述可溶解层，得到所述芯片的电极的开窗。
本申请实施例的技术方案，采用可溶解层填平所述芯片的电极开窗区域，可以填平由于制备所述功能层所带来的表面不平整性，同时对电极起到保护作用；使用可使所述可溶解层溶解的溶剂来溶解所述可溶解层，不需要采用刻蚀工艺就可直接完成所述芯片的电极的开窗，极大地减少了电极开窗的时间。因此，本申请实施例的技术方案提高了电极开窗的效率，从而提高了芯片产能。
可选地，所述功能层为光学功能层。例如，所述芯片上方的第1至N-1层功能层可以为光透明层、光不透明层、光折射层、带通滤光层、带阻滤光层或者光偏振层；所述第N层功能层可以为微透镜阵列。所述光学功能层也可以为具有其他功能的功能层，本申请实施例对此不做限定。
可选地，在本申请一个实施例中，所述可溶解层为水溶性可溶解层。相应地，所述溶剂为可溶解该水溶性可溶解层的溶剂，例如水溶剂。
采用光刻工艺制备所述第i层功能层时，因为光刻工艺包括显影步骤， 显影步骤中采用的显影液可将所述可溶解层溶解。在这种情况下，所述采用可溶解层填平所述芯片的电极开窗区域，具体为：采用所述可溶解层填平所述芯片的上表面至所述第i层功能层的上表面的电极开窗区域。
图3A、3B、3C、3D、3E出示了本申请实施例的一种芯片开窗的方法的不同步骤对应的图像传感器芯片截面示意图。
本实施例以所述功能层为3层(即，N＝3)为例。所述可溶解层为水溶性可溶解层。具体实施步骤如下：
步骤一：如图3A所示。首先采用光刻工艺在芯片上方制备第1光学功能层300，此时电极201上方将不会覆盖所述第1光学功能层300。再使用可溶解层301填平由于制备第1光学功能层300所带来的表面不平整性，同时对电极201起到保护作用。
步骤二：如图3B所示。采用光刻工艺在第1光学功能层300和填平的所述电极开窗区域的上方制备与第1光学功能层300具有相同图案和大小的第2光学功能层400。由于可溶解层301为水溶性材料，因此在制备第2光学功能层400时，可溶解层301被所述光刻工艺中利用的显影液溶解。
步骤三：如图3C所示。使用可溶解层301再次填平由于制备第2光学功能层400所带来的表面不平整性，即采用所述可溶解层301填平所述芯片的上表面至所述第2光学功能层400的上表面的电极开窗区域。
步骤四：如图3D所示。采用光刻工艺制备微透镜阵列500，所制备区域一般位于所述图像传感器的像素区域，所述像素区域一般为非电极开窗区域。由于可溶解层301为水溶性材料，因此，可溶解层301被所述光刻工艺中利用的显影液溶解。
在进行所述光刻材料显影工艺之后、光刻胶热回流技术之前，可溶解层301已经被溶解，此时微透镜阵列500的形状还未转变成为半球形，因此其截面图如图3D所示。所述光刻胶热回流技术为常用微透镜阵列制备技术，广泛地用于微透镜阵列的制作当中，此处不再赘述。
步骤五：如图3E所示。由于可溶解层301已经被溶解，因此即完成了所述芯片的电极201的开窗。此时只需要将微透镜阵列500进行光刻胶热回流工艺即完成了整个方案过程。
可选地，在本申请另一个实施例中，所述可溶解层为非水溶性可溶解层。相应地，所述溶剂为可溶解该非水溶性可溶解层的溶剂。
当所述可溶解层为非水溶性可溶解层时，在采用光刻工艺制备所述第i层功能层时，所述光刻工艺过程中采用的显影液不会将所述非水溶性可溶解层溶解。在这种情况下，所述采用可溶解层填平所述芯片的电极开窗区域，具体为：采用所述可溶解层填平所述芯片上方的第i-1层功能层的上表面至所述第i层功能层的上表面的电极开窗区域，其中，i大于1。
图4A、4B、4C、4D、4E出示了本申请实施例的另一种芯片开窗的方法的不同步骤对应的图像传感器芯片截面示意图。
本实施例以所述功能层为3层(即，N＝3)为例，所述可溶解层为非水溶性可溶解层。具体实施步骤如下：
步骤一：如图4A所示。首先采用光刻工艺在芯片上方制备第1光学功能层300，此时电极201上方将不会覆盖所述第1光学功能层300。再使用可溶解层301填平由于制备第1光学功能层300所带来的表面不平整性，同时对电极201起到保护作用。
步骤二：如图4B所示。采用光刻工艺在第1光学功能层300和填平的所述电极开窗区域的上方制备与第1光学功能层300具有相同图案和大小的第2光学功能层400，所述可溶解层301上方将不会覆盖第2光学功能层400。由于所述可溶解层301为非水溶性材料，因此在制备第2光学功能层400时，所述可溶解层301不会被所述光刻工艺中利用的显影液溶解。
步骤三：如图4C所示。使用可溶解层301继续填平由于制备第2光学功能层400所带来的表面不平整性，即采用所述可溶解层301填平所述芯片上方的第1层光学功能层300的上表面至所述第2层光学功能层400的上表面的电极开窗区域。
步骤四：如图4D所示。采用光刻工艺对微透镜阵列500进行制备，所制备区域一般位于所述图像传感器的像素区域，所述像素区域一般为非电极开窗区域。
步骤五：如图4E所示。采用可使所述可溶解层301溶解的溶剂来溶解所述可溶解层301。所述可溶解层301溶解后，完成所述芯片的电极201的开窗。
所述功能层也可以为非光学功能层。可选地，所述功能层为生物功能层。例如，所述生物功能层可以为多聚苯丙氨酸-赖氨酸涂层或核酸探针阵列。所述生物功能层也可以为具有其他功能的功能层，本申请实施例对此不做限 定。
本申请实施例提供了另一种芯片电极开窗的方法，可缩短电极开窗时间，提高电极开窗的效率，从而提高芯片产能。
图5出示了本申请实施例的芯片电极开窗的方法900的示意流程图。
910，采用光刻工艺制备芯片上方的第i层功能层，所述第i层功能层不覆盖所述芯片的电极开窗区域，其中，i为小于N-1的正整数，N为大于2的整数。
由下文可知，N为功能层的总层数。所述N为大于2的整数，则所述功能层至少为3层。第i层功能层为第1至N-2层功能层中的任一层功能层。例如，所述功能层为3层时，所述i为1；所述功能层为4层时，所述i为1或2。
920，采用可溶解层填平所述芯片的电极开窗区域。
由于第i层功能层不覆盖电极开窗区域，采用可溶解层填平电极开窗区域便于在该层上方制备下一层。
可选地，可以采用所述可溶解层覆盖所述电极开窗区域和所述第i层功能层的上表面；使用溶剂去除所述第i层功能层表面的所述可溶解层，以使所述电极开窗区域中所述可溶解层的上表面与所述第i层功能层的上表面的高度差小于预定阈值。例如，所述预定阈值可以为0.5μm。所述预定阈值也可以为其他合适的数值，本申请实施例对此并不限定。
应理解，所述利用可溶解层填平所述芯片的电极开窗区域，可以采用可溶解层仅覆盖所述电极开窗区域，使所述电极开窗区域中所述可溶解层的上表面与所述第i层功能层的上表面的高度差小于预定阈值即可。理想情况下，所述电极开窗区域中的所述可溶解层的上表面与所述功能层的高度一致，即所述高度差可忽略不计。
在i大于1时，采用上述方式重复制备每一层功能层，直至第N-2层功能层。
具体而言，在所述芯片的上方，采用光刻工艺制备第1层功能层；在所述芯片上方的第i-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述第i层功能层。例如，所述芯片的功能层为4层时，第1层功能层和第2层功能层都采用光刻工艺制备。
930，在所述芯片上方的第N-2层功能层和填平的所述电极开窗区域的 上方，覆盖所述芯片上方的第N-1层功能层。
940，在所述第N-1层功能层上方，采用光刻工艺制备所述芯片上方的第N层功能层，所述第N层功能层不覆盖所述电极开窗区域。
950，刻蚀所述第N-1层功能层的覆盖所述电极开窗区域的部分，以使所述第N-1层功能层不覆盖所述电极开窗区域。
960，使用溶剂溶解所述可溶解层，得到所述芯片的电极的开窗。
本申请实施例的技术方案，采用可溶解层填平所述芯片的电极开窗区域，可以填平由于采用光刻工艺制备所述功能层所带来的表面不平整性，同时对电极起到保护作用；使用可使所述可溶解层溶解的溶剂来溶解所述可溶解层，不需要通过刻蚀工艺来刻蚀全部的功能层就可完成所述芯片的电极的开窗。因此，本申请实施例的技术方案减少了电极开窗的时间，提高了电极开窗的效率，从而提高了芯片产能。
应理解，采用覆盖的方式制备功能层的层数也可以不止一层，但是采用光刻工艺与可溶解层填平的方式制备芯片功能层的层数占总功能层层数的比例越高，相对来说，芯片开窗的时间越少、效率越高。
在所述第N-2层功能层和填平的所述电极开窗区域的上方，可以采用光刻工艺制备所述第N-1层功能层，且所述功能层不覆盖所述芯片的电极开窗区域。该情况下，所述开窗的方法不需再采用刻蚀工艺来刻蚀所述功能层，直接通过溶解所述可溶解层便可完成所述电极的开窗。
可选地，所述功能层为光学功能层。例如，所述芯片上方的第1至N-1层功能层可以为光透明层、光不透明层、光折射层、带通滤光层、带阻滤光层或者光偏振层；所述第N层功能层可以为微透镜阵列。所述光学功能层也可以为具有其他功能的功能层，本申请实施例对此不做限定。
可选地，在本申请一个实施例中，所述可溶解层为水溶性可溶解层。相应地，所述溶剂为可溶解该水溶性可溶解层的溶剂，例如水溶剂。
采用光刻工艺制备所述第i层功能层时，因为光刻工艺包括显影步骤，则显影步骤中采用的显影液可将所述水溶性可溶解层溶解。在这种情况下，所述采用可溶解层填平所述芯片的电极开窗区域，具体为：采用所述可溶解层填平所述芯片的上表面至所述第i层功能层的上表面的电极开窗区域。
可选地，在本申请另一个实施例中，所述可溶解层为非水溶性可溶解层。相应地，所述溶剂为可溶解该非水溶性可溶解层的溶剂。
当所述可溶解层为非水溶性可溶解层时，在采用光刻工艺制备所述第i层功能层时，所述光刻工艺过程中采用的显影液不会将所述非水溶性可溶解层溶解。在这种情况下，所述采用可溶解层填平所述芯片的电极开窗区域，包括：采用所述可溶解层填平所述芯片上方的第i-1层功能层的上表面至所述第i层功能层的上表面的电极开窗区域，其中，i大于1。
图6A、6B、6C、6D、6E、6F出示了本申请实施例的另一种芯片开窗的方法的不同步骤对应的图像传感器芯片截面示意图。
应理解，所述N为大于2的整数，即所述功能层的层数至少为3层，也可以为4层，甚至更多层。本实施例以所述功能层为3层为例。所述可溶解层为水溶性可溶解层或者非水溶性可溶解层。
步骤一：如图6A所示。首先采用光刻工艺在芯片上方制备第1光学功能层300，此时电极201上方将不会覆盖所述第1光学功能层300。
步骤二：如图6B所示。使用可溶解层301填平由于制备第1光学功能层300所带来的表面不平整性，同时对电极201起到保护作用。
步骤三：如图6C所示。在第1光学功能层300与可溶解层301上方覆盖第2光学功能层400。
步骤四：如图6D所示。采用光刻工艺对微透镜阵列500进行制备，所制备区域一般位于所述图像传感器的像素区域，所述像素区域一般为非电极开窗区域。
步骤五：如图6E所示。在第2光学功能层400上将所述电极开窗区域进行选择性刻蚀，其中箭头方向代表利用刻蚀方法对所述第2光学功能层400进行刻蚀的方向，刻蚀深度为第2光学功能层400的厚度，刻蚀至可溶解层301为止。
步骤六：如图6F所示。采用可使所述可溶解层301溶解的溶剂来溶解所述可溶解层301。可溶解层301溶解后，完成所述芯片的电极201的开窗。当所述可溶解层为水溶性时，采用可使所述水溶性可溶解层溶解的溶剂进行溶解，便可完成所述电极的开窗。当所述可溶解层为非水溶性时，采用可使所述非水溶性可溶解层溶解的溶剂进行溶解，便可完成所述电极的开窗。
图7A、7B、7C、7D、7E、7F、7G出示了本申请实施例的另一种芯片开窗的方法的不同步骤对应的图像传感器芯片截面示意图。
本申请实施例以所述功能层为4层为例，所述可溶解层为水溶性可溶解 层。所述图像传感器芯片包括第1光学功能层300、第2光学功能层400、第3光学功能层600、微透镜阵列500、钝化层200、芯片电极201以及芯片的硅衬底层100。
步骤一：如图7A所示。首先采用光刻工艺在芯片上方制备第1光学功能层300，此时电极201上方将不会覆盖所述第1光学功能层300。再使用可溶解层301填平由于制备第1光学功能层300所带来的表面不平整性，同时对电极201起到保护作用。
步骤二：如图7B所示。采用光刻工艺在第1光学功能层300与可溶解层301上方制备与第1光学功能层300具有相同图案和大小的第2光学功能层400。由于可溶解层301为水溶性材料，因此在制备第2光学功能层400时，所述芯片的电极开窗区域可溶解层301被所述光刻工艺中利用的显影液溶解。
步骤三：如图7C所示。使用可溶解层301再次填平由于制备第2光学功能层400所带来的表面不平整性，即采用所述可溶解层301填平所述芯片的上表面至所述第2光学功能层400的上表面的电极开窗区域。
步骤四：如图7D所示。在第2光学功能层400与可溶解层301上方覆盖第3光学功能层600。
步骤五：如图7E所示。采用光刻工艺对微透镜阵列500进行制备，所制备区域一般位于所述图像传感器的像素区域，所述像素区域一般为非电极开窗区域。
步骤六：如图7F所示。在第3光学功能层600上将电极开窗区域进行选择性刻蚀，其中箭头方向代表利用刻蚀方法对所述第3光学功能层600进行刻蚀的方向，刻蚀深度为第3光学功能层600的厚度，刻蚀至可溶解层301为止。
步骤七：如图7G所示。采用可使所述水溶性可溶解层301溶解的溶剂来溶解所述可溶解层301。可溶解层301溶解后，完成所述芯片的电极201的开窗。
图8A、8B、8C、8D、8E、8F、8G出示了本申请实施例的另一种芯片开窗的方法的不同步骤对应的图像传感器芯片截面示意图。
本申请实施例以所述功能层为4层为例，所述可溶解层为非水溶性可溶解层。
步骤一：如图8A所示。首先采用光刻工艺在芯片上方制备第1光学功能层300，此时电极201上方将不会覆盖所述第1光学功能层300。再使用可溶解层301填平由于制备第1光学功能层300所带来的表面不平整性，同时对电极201起到保护作用。
步骤二：如图8B所示。采用光刻工艺在第1光学功能层300上方制备与第1光学功能层300具有相同图案和大小的第2光学功能层400，可溶解层上方301将不会覆盖第2光学功能层400。由于可溶解层301为非水溶性材料，因此在制备第2光学功能层400时，可溶解层301不会被所述光刻工艺中利用的显影液溶解。
步骤三：如图8C所示。使用可溶解层301继续填平由于制备第2光学功能层400所带来的表面不平整性，即采用所述可溶解层301填平所述芯片上方的第1层光学功能层300的上表面至所述第2层光学功能层400的上表面的电极开窗区域。
步骤四：如图8D所示。在第2光学功能层400与所述可溶解层301上方覆盖第3光学功能层600。
步骤五：如图8E所示。采用光刻工艺对微透镜阵列500进行制备，所制备区域一般位于所述图像传感器的像素区域，所述像素区域一般为非电极开窗区域。
步骤六：如图8F所示。在所述第3光学功能层600上将电极开窗区域进行选择性刻蚀，其中箭头方向代表利用刻蚀方法对所述第3光学功能层600进行刻蚀的方向，刻蚀深度为第3光学功能层600的厚度，刻蚀至可溶解层301为止。
步骤七：如图8G所示。采用可使所述非水溶性可溶解层301溶解的溶剂来溶解所述可溶解层301。可溶解层301溶解后，完成所述芯片的电极201的开窗。
所述功能层也可以为非光学功能层。可选地，所述功能层可以为生物功能层。例如，所述生物功能层可以为多聚苯丙氨酸-赖氨酸涂层或核酸探针阵列。所述生物功能层也可以为具有其他功能的功能层，本申请实施例对此不做限定。
可选的，所述刻蚀方法可以为干法刻蚀、湿法刻蚀和激光刻蚀，也可以为其他刻蚀方法。
可选的，所述干法刻蚀可以为等离子刻蚀、离子铣刻蚀和反应离子刻蚀。
本申请实施例还提供了一种芯片，所述芯片设置有根据上述方法制备的电极的开窗。
需要说明的是，在不冲突的前提下，本申请描述的各个实施例和/或各个实施例中的技术特征可以任意的相互组合，组合之后得到的技术方案也应落入本申请的保护范围。
本领域普通技术人员可以意识到，结合本文中所公开的实施例描述的各示例的制备方法，能够以电子硬件、或者计算机软件和电子硬件的结合来实现。这些功能究竟以硬件还是软件方式来执行，取决于技术方案的特定应用和设计约束条件。专业技术人员可以对每个特定的应用来使用不同方法来实现所描述的功能，但是这种实现不应认为超出本申请的范围。
在本申请提供的几个实施例中，应该理解到，所揭露的芯片电极的开窗的方法和芯片也可以通过其它的方式实现。例如，以上所描述的芯片电极的开窗的方法实施例仅仅是示例性的。例如，所述功能层的层数，所述采用光刻工艺制备所述功能层的层数，所述功能层的类型，实际实现时可以有另外的方式。
以上，仅为本申请的具体实施方式，但本申请实施例的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请实施例揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请适合私利的保护范围之内。因此，本申请实施例的保护范围应该以权利要求的保护范围为准。

Claims (25)

  1. 一种芯片电极开窗的方法，其特征在于，包括：
    采用光刻工艺制备芯片上方的第i层功能层，所述第i层功能层不覆盖所述芯片的电极开窗区域，其中，i为小于N的正整数，N为大于1的整数；
    采用可溶解层填平所述芯片的电极开窗区域；
    在所述芯片上方的第N-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述芯片上方的第N层功能层，所述第N层功能层不覆盖所述芯片的电极开窗区域；
    使用溶剂溶解所述可溶解层，得到所述芯片的电极的开窗。
  2. 根据权利要求1所述的方法，其特征在于，所述采用光刻工艺制备芯片上方的第i层功能层，包括：
    在所述芯片的上方，采用光刻工艺制备第1层功能层；
    在所述芯片上方的第i-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述第i层功能层，其中，i大于1。
  3. 根据权利要求1或2所述的方法，其特征在于，所述可溶解层为水溶性可溶解层。
  4. 根据权利要求3所述的方法，其特征在于，所述采用可溶解层填平所述芯片的电极开窗区域，包括：
    采用所述可溶解层填平所述芯片的上表面至所述第i层功能层的上表面的电极开窗区域。
  5. 根据权利要求1或2所述的方法，其特征在于，所述可溶解层为非水溶性可溶解层。
  6. 根据权利要求5所述的方法，其特征在于，所述采用可溶解层填平所述芯片的电极开窗区域，包括：
    采用所述可溶解层填平所述芯片上方的第i-1层功能层的上表面至所述第i层功能层的上表面的电极开窗区域，其中，i大于1。
  7. 根据权利要求1至6中任一项所述的方法，其特征在于，所述采用可溶解层填平所述芯片的电极开窗区域，包括：
    采用所述可溶解层覆盖所述电极开窗区域和所述第i层功能层的上表面；
    使用所述溶剂去除所述第i层功能层表面的所述可溶解层，以使所述电 极开窗区域中所述可溶解层的上表面与所述第i层功能层的上表面的高度差小于预定阈值。
  8. 根据权利要求1至7中任一项所述的方法，其特征在于，所述功能层为光学功能层。
  9. 根据权利要求8所述的方法，其特征在于，所述芯片上方的第1至N-1层功能层为光透明层、光不透明层、光折射层、带通滤光层、带阻滤光层或者光偏振层；
    所述第N层功能层为微透镜阵列。
  10. 根据权利要求1至7中任一项所述的方法，其特征在于，所述功能层为生物功能层。
  11. 根据权利要求10所述的方法，其特征在于，所述生物功能层为多聚苯丙氨酸-赖氨酸涂层或核酸探针阵列。
  12. 一种芯片电极开窗的方法，其特征在于，包括：
    采用光刻工艺制备芯片上方的第i层功能层，所述第i层功能层不覆盖所述芯片的电极开窗区域，其中，i为小于N-1的正整数，N为大于2的整数；
    采用可溶解层填平所述芯片的电极开窗区域；
    在所述芯片上方的第N-2层功能层和填平的所述电极开窗区域的上方，覆盖所述芯片上方的第N-1层功能层；
    在所述第N-1层功能层上方，采用光刻工艺制备所述芯片上方的第N层功能层，所述第N层功能层不覆盖所述电极开窗区域；
    刻蚀所述第N-1层功能层的覆盖所述电极开窗区域的部分，以使所述第N-1层功能层不覆盖所述电极开窗区域；
    使用溶剂溶解所述可溶解层，得到所述芯片的电极的开窗。
  13. 根据权利要求12所述的方法，其特征在于，所述采用光刻工艺制备芯片上方的第i层功能层，包括：
    在所述芯片的上方，采用光刻工艺制备第1层功能层；
    在所述芯片上方的第i-1层功能层和填平的所述电极开窗区域的上方，采用光刻工艺制备所述第i层功能层，其中，i大于1。
  14. 根据权利要求12或13所述的方法，其特征在于，所述可溶解层为水溶性可溶解层。
  15. 根据权利要求14所述的方法，其特征在于，所述采用可溶解层填平所述芯片的电极开窗区域，包括：
    采用所述可溶解层填平所述芯片的上表面至所述第i层功能层的上表面的电极开窗区域。
  16. 根据权利要求12或13所述的方法，其特征在于，所述可溶解层为非水溶性可溶解层。
  17. 根据权利要求16所述的方法，其特征在于，所述采用可溶解层填平所述芯片的电极开窗区域，包括：
    采用所述可溶解层填平所述芯片上方的第i-1层功能层的上表面至所述第i层功能层的上表面的电极开窗区域，其中，i大于1。
  18. 根据权利要求12至17中任一项所述的方法，其特征在于，所述采用可溶解层填平所述芯片的电极开窗区域，包括：
    采用所述可溶解层覆盖所述电极开窗区域和所述第i层功能层的上表面；
    使用所述溶剂去除所述第i层功能层表面的所述可溶解层，以使所述电极开窗区域中所述可溶解层的上表面与所述第i层功能层的上表面的高度差小于预定阈值。
  19. 根据权利要求12至18中任一项所述的方法，其特征在于，所述功能层为光学功能层。
  20. 根据权利要求19所述的方法，其特征在于，所述芯片上方的第1至N-1层功能层为光透明层、光不透明层、光折射层、带通滤光层、带阻滤光层或者光偏振层；
    所述第N层功能层为微透镜阵列。
  21. 根据权利要求12至18中任一项所述的方法，其特征在于，所述功能层为生物功能层。
  22. 根据权利要求21所述的方法，其特征在于，所述生物功能层为多聚苯丙氨酸-赖氨酸涂层或核酸探针阵列。
  23. 根据权利要求12所述的方法，其特征在于，所述刻蚀包括：干法刻蚀、湿法刻蚀和激光刻蚀。
  24. 根据权利要求23所述的方法，其特征在于，所述干法刻蚀包括：等离子刻蚀、离子铣刻蚀和反应离子刻蚀。
  25. 一种芯片，其特征在于，所述芯片设置有根据权利要求1至24中任一项所述的方法制备的电极的开窗。
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