WO2021070903A1 - 電磁波発生装置 - Google Patents

電磁波発生装置 Download PDF

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Publication number
WO2021070903A1
WO2021070903A1 PCT/JP2020/038119 JP2020038119W WO2021070903A1 WO 2021070903 A1 WO2021070903 A1 WO 2021070903A1 JP 2020038119 W JP2020038119 W JP 2020038119W WO 2021070903 A1 WO2021070903 A1 WO 2021070903A1
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WO
WIPO (PCT)
Prior art keywords
voltage
electromagnetic wave
wave generating
rtd
generating elements
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Application number
PCT/JP2020/038119
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English (en)
French (fr)
Japanese (ja)
Inventor
田中　博之
小林　秀樹
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パイオニア株式会社
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Publication date
Application filed by パイオニア株式会社 filed Critical パイオニア株式会社
Priority to JP2021551700A priority Critical patent/JP7346584B2/ja
Publication of WO2021070903A1 publication Critical patent/WO2021070903A1/ja

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

Definitions

  • the present invention relates to an electromagnetic wave generator, and more particularly to an electromagnetic wave generator that drives a plurality of electromagnetic wave generators in parallel.
  • a resonant tunneling diode (hereinafter referred to as RTD) is known as an electromagnetic wave generating element of a measuring device using electromagnetic waves in the terahertz band distributed over a frequency band of 0.1 THz to 10 THz.
  • the RTD is an element having a differential negative resistance (Negative Differential Resistance: hereinafter referred to as NDR) region in the voltage-current characteristic, and generates an electromagnetic wave in the terahertz band by applying a bias voltage in the differential negative resistance region.
  • NDR Negative Differential Resistance
  • terahertz is obtained by repeatedly applying a DC offset voltage and a pulsed voltage to an RTD oscillating element as a terahertz wave oscillating element to repeatedly generate an electromagnetic wave generation state and a non-generation state.
  • ASK amplitude shift keying method
  • DAC digital-to-analog conversion circuit
  • a multi-channel DAC is used in order to generate a bias voltage according to the number of elements. Is desirable.
  • the present invention has been made in view of the above points, and parallel control of a plurality of RTD oscillating elements driven at a high modulation frequency can be performed without increasing the scale and cost of the circuit while using the DAC.
  • One of the purposes is to provide a possible electromagnetic wave generator.
  • a driving voltage is supplied, and a plurality of electromagnetic wave generating elements, each of which generates an electromagnetic wave in response to the drive voltage, and a plurality of DC voltages corresponding to each of the plurality of electromagnetic wave generating elements are voltageed.
  • a variably generated DC voltage source a modulated voltage source that generates a modulated voltage in which the voltage value periodically changes between a predetermined binary voltage value in the plurality of electromagnetic wave generating elements, and the plurality of DC voltages.
  • a supply unit that adds each of the modulation voltages and supplies them to the plurality of electromagnetic wave generating elements, and a control that controls the DC voltage source to change the voltage values of the plurality of DC voltages independently of each other. It is characterized by having a part and.
  • FIG. 1 is a functional block diagram showing the configuration of the electromagnetic wave generator 1 according to the present invention.
  • the electromagnetic wave generator 1 includes a control unit 10 that supplies a control signal for instructing the generation of a terahertz wave. Further, the electromagnetic wave generator 1 has a multi-channel DAC20 which is a DC voltage source that outputs a DC voltage from a plurality of output terminals and an ASK modulation frequency, and outputs a binary voltage value by periodically changing the voltage value. It has a high-speed DAC 30 to be used, m adder 40s for adding the output of the multi-channel DAC 20 and the output of the high-speed DAC 30, and m RTD oscillating elements 50 which are terahertz wave generation sources.
  • a control unit 10 that supplies a control signal for instructing the generation of a terahertz wave.
  • the electromagnetic wave generator 1 has a multi-channel DAC20 which is a DC voltage source that outputs a DC voltage from a plurality of output terminals and an ASK modulation frequency, and outputs a binary voltage value by periodically changing the voltage value. It has a high-
  • the control unit 10 is connected to the multi-channel DAC 20 and supplies an offset voltage control signal for controlling each voltage value of the DC offset voltage V Offset 1 to V Offset m output from the output end of the multi-channel DAC 20. Further, the control unit 10 is connected to the high-speed DAC 30 and supplies a modulation voltage control signal for controlling the voltage amplitude and frequency of the modulation voltage V AC output by the high-speed DAC 30.
  • the multi-channel DAC 20 is a DC voltage source having m output ends. Each of the m output ends is connected to each of the m adders 40.
  • the multi-channel DAC 20 variably controls each voltage value of the DC offset voltage V Offset 1 to V Offset m output from each output end based on the offset voltage control signal supplied from the control unit 10. It operates to output from each output end.
  • the high-speed DAC 30 is a voltage source having one output end that outputs a modulated voltage V AC whose voltage value changes periodically like a square wave, for example.
  • the output end is connected to each of m adders 40.
  • the high-speed DAC 30 operates so as to variably output the maximum voltage value, the minimum voltage value, and the frequency of the modulation voltage V AC based on the modulation voltage control signal supplied from the control unit 10. Specifically, for example, the high-speed DAC 30 changes the maximum voltage value, the minimum voltage value, and the pulse generation cycle of the output modulation voltage V AC based on the modulation voltage control signal.
  • the m adders 40 are connected to the respective output ends of the m multi-channel DAC 20s and the output ends of the high-speed DAC 30.
  • the m adders 40 have a DC offset voltage V Offset 1 to V Offset m output from each of the m output ends of the multi-channel DAC 20 and a modulation voltage V AC output from the high-speed DAC 30. And are added by each adder and output. That is, the m adders 40 generate drive voltages V Dr 1 to V Dr m in which the modulation voltage V AC is offset by the offset voltages V Offset 1 to V Offset m, respectively, and adder of each of the adders 40. Operates to output from the device.
  • the m RTD oscillators 50 are connected to each of the output ends of the m adders 40, and the drive voltages V Dr 1 to V Dr m generated by the m adders 40 are m RTD oscillations. It is supplied to each of the elements 50.
  • the m RTD oscillators 50 generate terahertz waves from their respective RTD oscillators based on the supplied drive voltages V Dr 1 to V Dr m.
  • FIG. 2 is a schematic view showing the voltage-current characteristics of the RTD oscillator.
  • a terahertz wave can be generated intermittently according to the modulation frequency. It will be possible.
  • the control unit 10 has a DC offset voltage V Offset 1 to V Offset m output by the multi-channel DAC 20 among the drive voltages V Dr 1 to V Dr m supplied to the m RTD oscillators 50.
  • V Offset 1 to V Offset m output by the multi-channel DAC 20 among the drive voltages V Dr 1 to V Dr m supplied to the m RTD oscillators 50.
  • a modulation voltage V AC of the same frequency and voltage is applied to both the RTD oscillator element that generates the terahertz wave and the RTD oscillator element that does not generate the terahertz wave. That is, the control unit 10 has a high potential drive voltage V Dr that oscillates the RTD oscillating element from the output end corresponding to the RTD oscillating element that generates the terahertz wave among the m output ends of the multi-channel DAC 20. Is to output the offset voltage V Offset that offsets the modulation voltage V AC.
  • the offset voltage V Offset is output so that the drive voltage V Dr having the above-mentioned bias voltage values V NDR 1 to V NDR 2 is output from the adder 40.
  • a low offset voltage V Offset is supplied or an offset voltage is supplied so that a drive voltage V Dr that is less than the potential oscillated by the RTD oscillating element is output from the output end corresponding to the RTD oscillating element that does not generate a terahertz wave. Stop the supply of V Offset.
  • the offset voltage V Offset is output so that the drive voltage V Dr having a bias voltage value V NDR 1 to V NDR 2 or less described above is output from the adder 40.
  • the control unit 10 controls so as to generate a terahertz wave only in a desired RTD oscillating element by selectively supplying a high offset voltage V Offset to each adder 40 in this way.
  • the electromagnetic wave generator 1 of the present invention can control one multi-channel DAC 20 and one high-speed DAC 30 to selectively operate m RTD oscillators 50, and can control the DAC. It is possible to control multiple elements of the RTD oscillator element corresponding to a high modulation frequency without inviting an increase in scale and cost of the circuit of the IC chip including the IC chip.
  • FIG. 3 is a schematic time chart of the drive voltage V Dr applied to the RTD oscillator that emits the terahertz wave and the terahertz wave output of the RTD oscillator.
  • FIG. 4 is a schematic time chart of the drive voltage V Dr applied to the RTD oscillator that does not emit the terahertz wave and the terahertz wave output of the RTD oscillator.
  • the upper figure of FIG. 3 shows a time chart of the drive voltage V Dr supplied to the RTD oscillating element that periodically generates the terahertz wave to be operated among the m RTD oscillating elements 50.
  • the drive voltage V Dr applied to the RTD oscillator has a voltage value obtained by adding the V Offset output from the multi-channel DAC 20 and the rectangular wave voltage V AC output from the high-speed DAC 30 as described above.
  • the driving voltage V Dr according to the voltage value of the binary minimum value maximum value is an offset voltage V Offset is the maximum voltage of the offset voltage V Offset + modulation voltage V AC to the frequency of the modulation voltage V AC cycle Has a voltage profile that repeats.
  • the control unit 10 has a bias voltage V NDR 1 to V NDR 2 at which the maximum voltage value of the drive voltage V Dr is a voltage value within the terahertz wave oscillation region with respect to the multi-channel DAC 20, and the minimum voltage of the drive voltage V Dr.
  • the voltage value of the DC voltage V Offset to be output from the output end of the multi-channel DAC 20 corresponding to the RTD oscillating element 50 to be operated is set so that the value is the bias voltage V NDR 1 or less, which is the voltage value outside the terahertz wave oscillation region. Control.
  • the lower figure of FIG. 3 is a time chart showing the behavior of the terahertz wave generated from the RTD oscillator when the drive voltage V Dr is applied to the RTD oscillator.
  • the RTD oscillator generates a terahertz wave only when the drive voltage V Dr becomes a voltage value within the range of the bias voltage V NDR 1 to V NDR 2 which is the maximum value.
  • the terahertz wave of the RTD oscillating element to be operated can intermittently generate the terahertz wave in the period of the modulation voltage V AC.
  • the upper figure of FIG. 4 shows a time chart of the drive voltage V Dr supplied to the RTD oscillator 50 that is not generated in the terahertz wave that is not the target of operation among the m RTD oscillators 50.
  • the control unit 10 corresponds to the RTD oscillating element to be operated with respect to the multi-channel DAC 20 so that the maximum value of the driving voltage V Dr becomes the bias voltage VNDR 1 or less which is the voltage value on the low voltage side of the terahertz wave oscillation region. Offset voltage at the output terminal V Offset voltage value is set to 0V.
  • the maximum value of the drive voltage V Dr does not reach the range of the bias voltage V NDR 1 to V NDR 2, which is the voltage value in the terahertz wave oscillation region.
  • the lower figure of FIG. 4 is a time chart showing the behavior of the terahertz wave generated from the RTD oscillator when the drive voltage V Dr is applied to the RTD oscillator.
  • the RTD oscillator does not generate a terahertz wave.
  • m RTDs are controlled by controlling only the multi-channel DAC 20 that supplies the DC voltage component. It is possible to selectively generate a terahertz wave from an oscillating element.
  • the m RTD oscillators 50 by controlling only each voltage value of the DC offset voltage V Offset 1 to V Offset m output from the output end of the multi-channel DAC 20, the m RTD oscillators 50 Among them, it is possible to generate a terahertz wave only in a desired RTD oscillating element.
  • V NDR 1 and V NDR 2 which are voltage values in the terahertz wave oscillation region, fluctuate depending on the composition type and individual differences. Therefore, the voltage value on the high-voltage side of the binary voltage value of the modulation voltage V AC output from the high-speed DAC 30 is the highest of each of the low-voltage side voltage V NDR 1 in the terahertz wave generation region of the m RTD oscillators 50. It is desirable to set the voltage value smaller than the small VNDR 1.
  • the DC voltage V Offset supplied by the multi-channel DAC 20 to the RTD oscillator that is not the target of operation is set to 0V, but the present invention is not limited to this.
  • the maximum value of the drive voltage V Dr is less bias voltage V NDR 1 on the low pressure side of the bias voltage V NDR 1 ⁇ V NDR 2 as the voltage value of the terahertz wave oscillation region, multi-channel DAC20 operation outside the scope of It suffices if the voltage value of the DC offset voltage V Offset output from the output end corresponding to the RTD oscillating element can be controlled.
  • the low voltage side of the binary voltage value of the modulation voltage V AC output by the high-speed DAC 30 is set to 0 V, but the present invention is not limited to this.
  • the DC voltage V Offset supplied to the RTD oscillating element is set to be less than the voltage V NDR 1, and the bias voltage V NDR 1 in which V Offset + V AC is the voltage value in the terahertz wave oscillation region.
  • the DC voltage V Offset supplied to the RTD oscillating element was set to the region where the RTD oscillating element with a bias voltage of V NDR 2 or more did not oscillate, and the high voltage side of V AC was 0 V, low voltage.
  • the side may be ⁇ V AC and V Offset ⁇ V AC may be controlled within the range of V NDR 1 to V NDR 2.
  • the modulation voltage V AC output by the high-speed DAC 30 has been described as a square wave, but the present invention is not limited to this.
  • the voltage value settings of the multi-channel DAC 20 and the high-speed DAC 30 may be set according to the time responsiveness of the voltage value change of each DAC.
  • the electromagnetic wave generator used in the terahertz wave measuring device has been described as an example. However, it is not limited to the generation of terahertz waves by the RTD oscillating element, and it can also be used for an element that operates according to a driving voltage whose voltage value changes at high speed.
  • Control unit 20 Multi-channel DAC 30 high-speed DAC 40 adder 50 m RTD oscillators

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PCT/JP2020/038119 2019-10-09 2020-10-08 電磁波発生装置 WO2021070903A1 (ja)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013005115A (ja) * 2011-06-14 2013-01-07 Rohm Co Ltd 無線伝送装置
JP2013190350A (ja) * 2012-03-14 2013-09-26 Canon Inc テラヘルツ波帯の電磁波を用いた装置
JP2014200065A (ja) * 2013-03-12 2014-10-23 キヤノン株式会社 発振素子
US20170256665A1 (en) * 2016-03-03 2017-09-07 Electronics & Telecommunication Research Institute Appratus for generating terahertz wave and method for controlling terahertz wavefront using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103997A (ja) 2005-09-30 2007-04-19 Nippon Telegr & Teleph Corp <Ntt> 電磁波放射装置
JP2007295350A (ja) 2006-04-26 2007-11-08 Fujitsu Ltd サブミリ波帯発振器、アレイアンテナ及び空洞共振器
JP2016080686A (ja) 2014-10-15 2016-05-16 キヤノン株式会社 検査装置及び検査方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013005115A (ja) * 2011-06-14 2013-01-07 Rohm Co Ltd 無線伝送装置
JP2013190350A (ja) * 2012-03-14 2013-09-26 Canon Inc テラヘルツ波帯の電磁波を用いた装置
JP2014200065A (ja) * 2013-03-12 2014-10-23 キヤノン株式会社 発振素子
US20170256665A1 (en) * 2016-03-03 2017-09-07 Electronics & Telecommunication Research Institute Appratus for generating terahertz wave and method for controlling terahertz wavefront using the same

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