WO2021062924A1 - 介质滤波器的容性耦合结构、设计方法及介质滤波器 - Google Patents

介质滤波器的容性耦合结构、设计方法及介质滤波器 Download PDF

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WO2021062924A1
WO2021062924A1 PCT/CN2019/118959 CN2019118959W WO2021062924A1 WO 2021062924 A1 WO2021062924 A1 WO 2021062924A1 CN 2019118959 W CN2019118959 W CN 2019118959W WO 2021062924 A1 WO2021062924 A1 WO 2021062924A1
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Prior art keywords
hole
dielectric filter
capacitive coupling
blind hole
coupling structure
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PCT/CN2019/118959
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English (en)
French (fr)
Inventor
谢懿非
欧阳洲
丁海
林显添
邸英杰
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京信通信技术(广州)有限公司
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Publication of WO2021062924A1 publication Critical patent/WO2021062924A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2002—Dielectric waveguide filters

Definitions

  • the present invention relates to the technical field of filters, in particular to a capacitive coupling structure, a design method and a dielectric filter of a dielectric filter.
  • the dielectric filter is a microwave filter that uses a dielectric resonant cavity to achieve frequency selection through multi-stage coupling.
  • the surface of the dielectric filter is covered with a metal layer, and electromagnetic waves are confined in the dielectric body, forming a standing wave oscillation.
  • the capacitive coupling structure of a dielectric filter includes a dielectric body.
  • the medium body is provided with a medium cavity
  • the bottom wall of the medium cavity is provided with a through hole
  • the metal layer on the hole wall of the through hole, the bottom wall of the medium cavity, or the metal layer on the surface of the medium cavity is provided with a closed annular gap to To achieve the purpose of capacitive coupling.
  • the depth H1 of the through hole should be reduced accordingly.
  • the depth H1 of the through hole is reduced to 0.1mm, it will cause inconvenience.
  • the production of through holes and closed annular gaps on the medium body is difficult to produce and the production efficiency is low.
  • a capacitive coupling structure of a dielectric filter comprising: a dielectric block, the dielectric block includes a first surface and a second surface that are opposed to each other, the first surface is provided with a first blind hole, The bottom wall of the first blind hole is provided with an adjustment through hole extending to the second surface, the first blind hole includes a tapered hole section, and the inner diameter of the tapered hole section is greater than that of the first blind hole.
  • the bottom wall gradually increases in the direction from the mouth of the first blind hole; and the metal layer is laid on the outer wall of the dielectric block, the hole wall of the first blind hole, and the hole wall of the adjustment through hole on.
  • the distance H1 between the bottom wall of the first blind hole and the second surface can be adjusted accordingly, for example, the production of narrow-band dielectric filters
  • a distance H1 with a sufficiently large value can be selected to process a narrow-band dielectric filter, which is convenient Production and processing, the production efficiency is high;
  • the first blind hole includes a tapered hole section, the hole wall of the tapered hole section is relative to the first surface compared to the through hole whose hole wall is perpendicular to the first surface.
  • Inclined arrangement which not only facilitates the formation of the metal layer on the hole wall of the first blind hole, but also facilitates the use of cutting tools (including cutters and lasers, etc.) to perform processing operations on the metal layer of the tapered hole section, thereby improving production effectiveness.
  • cutting tools including cutters and lasers, etc.
  • a design method of a dielectric filter adopts the capacitive coupling structure of the dielectric filter, and includes the following steps: when the capacitive coupling bandwidth of the capacitive coupling structure of the dielectric filter needs to be adjusted, by changing The distance H1 between the bottom wall of the first blind hole and the second surface is adjusted accordingly.
  • the distance H1 between the bottom wall of the first blind hole and the second surface can be adjusted accordingly.
  • a narrow frequency band dielectric filter is produced,
  • a sufficiently large distance H1 can be selected to process a narrow-band dielectric filter, thus facilitating production and processing ,
  • the production efficiency is high;
  • the first blind hole includes a tapered hole section, the hole wall of the tapered hole section is inclined to the first surface relative to the through hole whose hole wall is perpendicular to the first surface
  • cutting tools including cutters and lasers, etc.
  • a dielectric filter includes the capacitive coupling structure of the dielectric filter.
  • the distance H1 between the bottom wall of the first blind hole and the second surface can be adjusted accordingly.
  • a narrow frequency band dielectric filter is produced, and by increasing The distance H1 between the bottom wall of the first blind hole and the second surface is used to reduce the bandwidth of capacitive coupling, and the distance H1 with a sufficiently large value can be selected to process the narrow band dielectric filter, which can facilitate the production and processing, and the production efficiency
  • the first blind hole includes a tapered hole section
  • the hole wall of the tapered hole section is inclined to the first surface relative to the through hole whose hole wall is perpendicular to the first surface, so that both It is convenient to form the metal layer on the hole wall of the first blind hole, and it is convenient to use cutting tools (including cutters and lasers, etc.) to perform processing operations on the metal layer of the tapered hole section, thereby improving production efficiency.
  • cutting tools including cutters and lasers, etc.
  • FIG. 1 is a top view of a capacitive coupling structure of a dielectric filter according to an embodiment of the present invention
  • Figure 2 is a cross-sectional view of an embodiment of Figure 1 at A-A;
  • Figure 3 is a cross-sectional view of another embodiment of Figure 1 at A-A;
  • FIG. 4 is a top view of a capacitive coupling structure of a dielectric filter according to another embodiment of the present invention.
  • Figure 5 is a cross-sectional view of an embodiment of Figure 4 at A-A;
  • FIG. 6 is a bottom view of a capacitive coupling structure of a dielectric filter according to another embodiment of the present invention.
  • Figure 7 is a cross-sectional view of another embodiment of Figure 4 at A-A;
  • Figure 8 is a cross-sectional view of another embodiment of Figure 4 at A-A;
  • Figure 9 is a cross-sectional view of another embodiment of Figure 4 at A-A;
  • Figure 10 is a cross-sectional view of still another embodiment of Figure 4 at A-A;
  • FIG. 11 is a schematic structural diagram of a dielectric filter according to an embodiment of the present invention.
  • Figure 12 is an S parameter curve diagram of a capacitive coupling structure of a traditional dielectric filter
  • first and second are only used for description purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include at least one of the features.
  • “plurality” means at least two, such as two, three, etc., unless otherwise specifically defined.
  • a capacitive coupling structure of a dielectric filter includes a dielectric block 10 and a metal layer 20.
  • the dielectric block 10 includes a first surface 11 and a second surface 12 opposite to each other.
  • the first surface 11 is provided with a first blind hole 13, and the bottom wall of the first blind hole 13 is provided with an adjustment through hole 14 extending to the second surface 12, and the first blind hole 13 includes Conical hole section 131.
  • the inner diameter of the tapered hole section 131 gradually increases from the bottom wall of the first blind hole 13 to the mouth of the first blind hole 13.
  • the metal layer 20 is laid on the outer wall of the dielectric block 10, the hole wall of the first blind hole 13 and the hole wall of the adjustment through hole 14.
  • the larger the value of the distance H1 the smaller the capacitive coupling bandwidth, so the adjustment of the capacitive coupling bandwidth is required.
  • the distance H1 between the bottom wall of the first blind hole 13 and the second surface 12 can be adjusted accordingly.
  • the bandwidth of capacitive coupling can be reduced by increasing the distance H1 between the bottom wall of the first blind hole 13 and the second surface 12, and a distance H1 with a sufficiently large value can be selected to process narrow frequency band media Filter, which is convenient for production and processing, and has high production efficiency.
  • the first blind hole 13 includes a tapered hole section 131, the tapered hole is perpendicular to the through hole whose wall is perpendicular to the first surface 11.
  • the hole wall of the section 131 is arranged obliquely with respect to the first surface 11, which not only facilitates the formation of the metal layer 20 on the hole wall of the first blind hole 13, but also facilitates the use of cutting tools (including cutters and lasers, etc.) in the tapered hole Processing operations are performed on the metal layer 20 of the segment 131, thereby improving the production efficiency. At the same time, without changing the discharge cavity, the balance of the left and right zero points of the product can be changed.
  • the bottom wall of the first blind hole 13 is provided with an adjustment through hole 14 extending to the second surface 12, that is, a partial area of the bottom wall of the first blind hole 13 is processed to extend to the second The adjusting through hole 14 of the surface 12, so that the diameter of the adjusting through hole 14 is smaller than the area size of the bottom wall of the first blind hole 13, so that the side wall of the first blind hole 13 and the side wall of the adjusting through hole 14 form a stepped shape
  • the through hole formed by the first blind hole 13 communicating with the adjusting through hole 14 is a stepped through hole.
  • the metal layer 20 of the hole wall of the tapered hole section 131 is provided with a closed annular notch 15.
  • the position of the closed annular notch 15 on the hole wall of the tapered hole section 131 that is, when the distance H0 between the closed annular notch 15 and the end face of the first blind hole 13 is changed, Then the balance of the symmetrical zero point can be adjusted accordingly.
  • the balance of the left and right zero points of the product can be changed.
  • the two ends of the closed annular gap 15 communicate with each other to form, for example, a closed circular ring, a closed square ring, or a closed elliptical ring.
  • the non-closed annular gap 16 is provided with opposite ends, and the opposite ends of the non-closed annular gap 16 are spaced apart and are not connected to each other. That is, the non-closed annular gap 16 is, for example, a non-closed circle. Ring, non-closed square ring or non-closed oval ring.
  • the metal layer 20 is not laid at the closed annular gap 15 and the non-closed annular gap 16 and the wall surface of the dielectric block 10 is exposed.
  • the metal layer 20 at the closed annular gap 15 and the non-closed annular gap 16 is removed to expose the wall surface of the dielectric block 10.
  • the dielectric block 10 corresponds to the closed annular gap 15, the non-closed annular gap
  • the wall surface of the notch 16 may not be electroplated or sprayed with the metal layer 20, so that the wall surface of the dielectric block 10 is exposed.
  • the metal layer 20 of the hole wall of the first blind hole 13 the metal layer 20 of the hole wall of the adjustment through hole 14, and the metal layer 20 of the hole wall of the first surface 11
  • At least one of the metal layer 20 and the metal layer 20 of the second surface 12 is provided with a non-closed annular notch 16 arranged around the first blind hole 13.
  • the metal layer 20 of the hole wall of the first blind hole 13 is provided with a non-closed annular notch 16.
  • a certain Increase the width of the closed annular gap 15 to a large extent For example, increase the width of the closed annular gap 15 from 0.1 mm to 1 mm or 2 mm.
  • the closed annular gap 15 with a width of 1 mm or more can be easily processed by tools, even in A closed annular notch 15 is formed on the hole wall of the tapered hole section 131; on the other hand, a non-closed annular notch 16 is provided on the metal layer 20 of the hole wall of the first blind hole 13, and the non-closed annular notch 16 can Used to adjust the capacitive coupling bandwidth of the dielectric filter. It should be noted that the opening position of the non-closed annular gap 16 on the hole wall of the first blind hole 13 is not limited.
  • the metal layer 20 of the hole wall of the adjustment through hole 14 is provided with a non-closed annular notch 16.
  • a non-closed annular gap 16 may also be formed on the hole wall of the adjustment through hole 14.
  • one of the first surface 11 and the second surface 12 is provided with a non-closed annular notch 16 arranged around the first blind hole 13.
  • the non-closed annular notch 16 can also be formed on the first surface 11 or the second surface 12 and arranged around the first blind hole 13, so as to be opposite to the hole wall of the first blind hole 13 A non-closed annular gap 16 is formed, which is more convenient for production.
  • the non-closed annular gap 16 includes a first end and a second end opposite to each other.
  • the first end and the second end are spaced apart, the line connecting the first end to the axis of the first blind hole 13 is a first boundary line 161, and the second end is connected to the first blind hole 13
  • the line connecting the axis of the hole 13 is the second boundary line 162, and the angle between the first boundary line 161 and the second boundary line 162 is ⁇ , and 0° ⁇ 360°.
  • the non-closed annular gap 16 extends from the first end to the second end, and the first end and the second end are spaced apart, so as to realize the non-closed annular gap 16 around the first end.
  • the blind hole 13 is partially arranged circumferentially instead of completely surrounding the circumferential direction of the first blind hole 13.
  • the capacitive coupling bandwidth can be adjusted by adjusting the angle ⁇ between the first boundary line 161 and the second boundary line 162.
  • ⁇ can be 45°, 90°, 135°, 180°, 225°, 250°, 300° or other such that the non-closed annular notch 16 can cooperate with the closed annular notch 15 to adjust the capacitive coupling bandwidth angle.
  • the number of the non-closed annular notches 16 may also be more than two, and the two or more non-closed annular notches 16 are along the axis of the first blind hole 13 Direction interval setting.
  • both the closed annular gap 15 and the non-closed annular gap 16 can also be one.
  • the first blind hole 13 further includes a straight-through hole section 132 whose inner diameter remains unchanged.
  • the straight-through hole section 132 and the mouth of the tapered hole section 131 Department is connected.
  • a part of the hole wall of the first blind hole 13 close to the second surface 12 is an inclined wall inclined with respect to the first surface 11, and the other part may be a straight wall perpendicular to the first surface 11.
  • the tapered hole section 131 may be one tapered hole section 131, or two or more tapered hole sections 131 with different hole wall inclination are connected in sequence, or two or more tapered holes.
  • the hole section 131 is formed by combining more than one through hole section 132, as long as the diameter of the tapered hole section 131 is satisfied to gradually increase from one end to the other end, or show a trend of gradually increasing as a whole.
  • the first blind hole 13 does not include a through hole section 132, and the first blind hole 13 is a tapered hole section 131. In this way, it is not necessary to provide the first blind hole 13 with a through hole section 132, directly in the medium
  • the block 10 only needs to be provided with a tapered blind hole, which is more convenient for manufacturing and processing.
  • the hole wall of the mouth of the adjustment through hole 14 and the hole wall of the mouth of the first blind hole 13 are both chamfered or rounded.
  • the hole wall of the mouth of the adjustment through hole 14 and the hole wall of the mouth of the first blind hole 13 are, for example, a 45-degree inclined hole wall.
  • the angle between the hole wall of the tapered hole section 131 and the axis of the first blind hole 13 is a, and 5° ⁇ a ⁇ 85°. Further, 15° ⁇ a ⁇ 75°.
  • the angle between the hole wall of the tapered hole section 131 and the axis of the first blind hole 13 is 45 degrees.
  • the included angle between the hole wall of the tapered hole section 131 and the axis of the first blind hole 13 is not limited to 5° to 85°, and is greater than 0° and less than 90°. The range is also ok.
  • the first surface 11 is further provided with two second blind holes 17 spaced apart, and the first blind holes 13 are located between the two second blind holes 17
  • the metal layer 20 is also laid on the hole wall of the second blind hole 17.
  • the second surface 12 is also provided with two second blind holes 17 spaced apart, and the adjustment through holes 14 are located in the two second blind holes. Between the blind holes 17, the metal layer 20 is also laid on the hole wall of the second blind hole 17.
  • the hole wall of the mouth of the second blind hole 17 can also be provided with a chamfered or rounded corner.
  • a design method of a dielectric filter adopts the capacitive coupling structure of the dielectric filter described in any one of the above embodiments, and includes the following steps: when the capacitive coupling of the dielectric filter needs to be adjusted When the capacitive coupling bandwidth of the coupling structure is adjusted, the distance H1 between the bottom wall of the first blind hole 13 and the second surface 12 can be adjusted accordingly.
  • the capacitive coupling bandwidth of the capacitive coupling structure of the device is adjusted, the distance H1 between the bottom wall of the first blind hole 13 and the second surface 12 can be adjusted accordingly.
  • the bandwidth of capacitive coupling can be reduced by increasing the distance H1 between the bottom wall of the first blind hole 13 and the second surface 12, and a sufficiently large distance H1 can be selected to process a narrow band dielectric filter Therefore, the production and processing can be facilitated and the production efficiency is high.
  • the tapered hole section 131 is opposite to the through hole whose wall is perpendicular to the first surface 11.
  • the wall of the hole is inclined with respect to the first surface 11, which not only facilitates the formation of the metal layer 20 on the hole wall of the first blind hole 13, but also facilitates the use of cutting tools (including cutters and lasers, etc.) in the tapered hole section 131
  • the processing operation is performed on the metal layer 20, thereby improving the production efficiency.
  • the balance of the left and right zero points of the product can be changed.
  • Figure 14 is a capacitive coupling structure of a dielectric filter with an 8-cavity double-zero point symmetry structure according to an embodiment.
  • H0 is 1.3mm
  • H1 is the S-parameter curve diagram when H1 is 2.35mm
  • Figure 19 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure, and the capacitive coupling of the dielectric filter
  • the coupling structure please refer to Figure 2, Figure 3, Figure 5 to Figure 11, the S parameter curve when H0 is 1.3mm and H1 is 2.45mm. Comparing Fig. 14 and Fig. 19, it can be seen that when H0 is both 1.3 mm, H1 becomes larger, and the left and right zero points are still relatively symmetrical, but the corresponding coupling bandwidth becomes smaller.
  • the symmetrical zero point balance is adjusted by changing the cavity design of the dielectric filter.
  • the workload of the cavity design is increased, and the design of the cavity is more difficult.
  • the performance indicators of the dielectric filter will be seriously affected. It can be seen that the adjustment of the symmetrical zero point balance of the capacitive coupling structure of the dielectric filter is quite difficult, which in turn leads to lower production efficiency, and ultimately greatly limits the application of the dielectric filter.
  • the distance H0 between the closed annular notch 15 and the orifice end surface of the first blind hole 13 is adjusted accordingly.
  • Figure 12 is the S-parameter curve of the capacitive coupling structure of the dielectric filter under the traditional 8-cavity double-zero symmetric structure, and the coupling through hole of the dielectric filter under the traditional 8-cavity double-zero symmetric structure
  • the entire hole wall is perpendicular to the surface of the dielectric block 10. It can be seen from FIG. 12 that the two symmetrical zero points on the left and the right are uneven. If the symmetrical zero point balance needs to be adjusted, it needs to be achieved by adjusting the cavity structure design.
  • Figure 13 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetry structure.
  • the capacitive coupling structure of the dielectric filter refer to Figure 2, Figure 5, Figure 7, and Figure 9 To Figure 11, the S parameter curve when H0 is 1.08mm and H1 is 2.3mm, it can be seen from Figure 13 that the two symmetrical zero points on the left and right present the effect of low left and high right. The difference between the two zero points on the left and right is determined by the traditional The 18.8dB becomes 0.98dB, which is close to balance.
  • Figure 14 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • Figure 2 Figure 5, Figure 7, and Figure 9 for the capacitive coupling structure of the dielectric filter.
  • Figure 11 the S-parameter curve when H0 is 1.3mm and H1 is 2.35mm. From Figure 14, it can be seen that the two symmetrical zero points on the left and right present the effect of low left and high right, and the difference between the two zero points on the left and right is 0.03 B, closer to balance, and smaller than the difference between the left and right zero points when H0 is 1.08mm, that is, the difference between the left and right zero points is further reduced.
  • FIG. 15 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • the capacitive coupling structure of the dielectric filter please refer to FIG. 2, FIG. 5, FIG. 7, and FIG. 9.
  • the S parameter curve when H0 is 1.76mm and H1 is 2.35mm. From Figure 15, it can be seen that the two symmetrical zero points on the left and right present the effect of high left and low right, and the difference between the two zero points on the left and right is 2.16 dB.
  • FIG. 16 shows a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero point symmetric structure.
  • the capacitive coupling structure of the dielectric filter please refer to FIG. 2, FIG. 5, FIG. 7, and FIG. 9.
  • Figure 17 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • the capacitive coupling structure of the dielectric filter refer to Figures 2, 5, 7, and 9 To Figure 11, the S-parameter curve when H0 is 1.83mm and H1 is 2.4mm. It can be seen from Figure 17 that the two symmetrical zero points on the left and right present the effect of high left and low right, and the difference between the two zeros on the left and right is 6.59 dB.
  • FIG. 18 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • the capacitive coupling structure of the dielectric filter please refer to FIG. 2, FIG. 5, FIG. 7, and FIG. 9.
  • Figure 19 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • the capacitive coupling structure of the dielectric filter refer to Figure 2, Figure 5, Figure 7, and Figure 9.
  • Figure 11 the S-parameter curve when H0 is 1.3mm and H1 is 2.45mm, as can be seen from Figure 19, the two symmetrical zero points on the left and right present the effect of low left and high right, and the difference between the two zero points on the left and right is 0.367 dB.
  • FIG. 20 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • the capacitive coupling structure of the dielectric filter please refer to FIG. 2, FIG. 5, FIG. 7, and FIG. 9.
  • the S-parameter curve when H0 is 1.25mm and H1 is 2.45mm.
  • the two symmetrical zero points on the left and right present the effect of low left and high right, and the difference between the two zero points on the left and right is 3.75 dB.
  • FIG. 21 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • the capacitive coupling structure of the dielectric filter please refer to FIG. 2, FIG. 5, FIG. 7, and FIG. 9.
  • the S-parameter curve when H0 is 1.2mm and H1 is 2.45mm. From Figure 20, it can be seen that the two symmetrical zero points on the left and right present the effect of low left and high right, and the difference between the two zero points on the left and right is 10.36 dB.
  • FIG. 22 shows a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • the capacitive coupling structure of the dielectric filter please refer to FIG. 2, FIG. 5, FIG. 7, and FIG. 9.
  • the S parameter curve when H0 is 1.13mm and H1 is 2.45mm. It can be seen from Figure 22 that the two symmetrical zero points on the left and right present the effect of low left and high right, and the difference between the two zero points on the left and right is 18.75 dB.
  • H0 when H1 is unchanged, H0 gradually decreases from a larger value to the corresponding value when the left and right zero points are balanced with each other.
  • the difference between the left and right zero points gradually decreases, and presents, for example, The effect of high left and low right; when the corresponding value of H0 is further reduced from the balance between the left and right zero points, the difference between the two zero points on the left and right gradually increases, and the effect is such as low left and high right.
  • FIG. 23 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • H0 is 1.21mm
  • H1 is the S-parameter curve diagram when H1 is 2.45mm
  • the capacitive coupling structure of the dielectric filter in Fig. 3 and Fig. 8 is compared with that in Fig. 2, Fig. 5, Fig. 7, Fig. 9 and Fig. 10,
  • the direction of the tapered hole section 131 is opposite. It can be seen from FIG.
  • FIG. 24 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetric structure.
  • H0 is The S-parameter curve diagram when 1.35mm and H1 is 2.45mm. It can be seen from Figure 24 that the left and right zero points show the effect of high left and low right.
  • FIG. 25 is a capacitive coupling structure of a dielectric filter under an 8-cavity double-zero symmetry structure.
  • H0 is The S-parameter curve diagram when 1.11mm and H1 is 2.45mm. It can be seen from Figure 25 that the two zero points on the left and the right show the effect of low and high left.
  • At least one of the metal layer 20 of the hole wall of the first blind hole 13, the metal layer 20 of the hole wall of the adjustment through hole 14, the metal layer 20 of the first surface 11, and the metal layer 20 of the second surface 12 There is a non-closed annular gap 16 arranged around the first blind hole 13;
  • the non-closed annular gap 16 includes opposite first and second ends. The first end and the second end are spaced apart, the line connecting the first end to the axis of the first blind hole 13 is a first boundary line 161, and the second end is connected to the first blind hole 13
  • the line connecting the axis of the hole 13 is the second boundary line 162, and the angle between the first boundary line 161 and the second boundary line 162 is ⁇ .
  • ⁇ is changed by changing the size of the non-closed annular gap 16, and the capacitive coupling bandwidth is adjusted accordingly.
  • FIGS. 26-28 illustrate the S-parameter curve diagram when H0 is 1.25 mm and ⁇ is 260 degrees in the capacitive coupling structure of the dielectric filter according to an embodiment
  • FIG. 27 illustrates the S parameter curve diagram of an embodiment. In the capacitive coupling structure of the dielectric filter, H0 is 1.25mm, and ⁇ is 290 degrees. S-parameter curve diagram
  • FIG. 28 illustrates the capacitive coupling structure of the dielectric filter according to an embodiment, where H0 is 1.25 S parameter curve graph when mm and ⁇ are 310 degrees.
  • a filter including the capacitive coupling structure of the dielectric filter described in any one of the above embodiments is a dielectric filter with more than 4 cavities and a double-zero point symmetrical structure, for example, it can be a 4-cavity double-zero point symmetrical dielectric filter, a 5-cavity double-zero point symmetrical dielectric filter, and a 6-cavity double zero point symmetrical structure. Dielectric filter with symmetrical structure, 7-cavity double-zero symmetrical dielectric filter, or 8-cavity double-zero symmetrical dielectric filter.
  • the distance H1 between the bottom wall of the first blind hole 13 and the second surface 12 can be adjusted accordingly. Specifically, for example, a narrow-band dielectric filter is produced. By increasing the distance H1 between the bottom wall of the first blind hole 13 and the second surface 12 to reduce the bandwidth of the capacitive coupling, the distance H1 with a sufficiently large value can be selected to process a narrow-band dielectric filter.
  • the first blind hole 13 includes a tapered hole section 131
  • the hole wall of the tapered hole section 131 is perpendicular to the through hole of the first surface 11 It is arranged obliquely with respect to the first surface 11, which not only facilitates the formation of the metal layer 20 on the hole wall of the first blind hole 13, but also facilitates the use of cutting tools (including cutters and lasers, etc.) on the metal layer of the tapered hole section 131.
  • Processing operations on 20 can improve production efficiency.
  • the balance of the left and right zero points of the product can be changed.

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Abstract

本发明涉及一种介质滤波器的容性耦合结构、设计方法及介质滤波器，容性耦合结构包括介质块及金属层。一方面，需要调整介质滤波器的容性耦合结构的容性耦合带宽时，通过改变第一盲孔的底壁与第二表面之间的间距H1来相应调整即可，具体例如生产制造窄频段的介质滤波器，通过增大第一盲孔的底壁与第二表面之间的间距H1来减小容性耦合的带宽，可以选取数值足够大的间距H1来加工窄频段的介质滤波器，因而能便于生产加工，生产效率较高；另一方面，锥形孔段的孔壁相对于第一表面倾斜设置，这样既便于将金属层形成于第一盲孔的孔壁上，又方便采用切割工具(包括刀具与激光等等)在锥形孔段的金属层上进行加工操作，进而能提高生产效率。

Description

介质滤波器的容性耦合结构、设计方法及介质滤波器 技术领域
本发明涉及滤波器技术领域，特别是涉及一种介质滤波器的容性耦合结构、设计方法及介质滤波器。
背景技术
介质滤波器是一种采用介质谐振腔经过多级耦合而取得选频作用的微波滤波器。介质滤波器的表面覆盖着金属层，电磁波被限制在介质体内，形成驻波振荡。传统地，介质滤波器的容性耦合结构包括介质体。介质体设有介质腔，介质腔的底壁上贯穿设置有通孔，并在通孔的孔壁、介质腔的底壁、或介质腔的表面上的金属层设置有封闭式环形缺口，以实现容性耦合的目的。然而，对于窄频段的介质滤波器，当需要减小容性耦合的带宽时，则相应减小通孔的深度H1大小，在通孔的深度H1大小减小到0.1mm时，将导致不便于在介质体上制造形成通孔及封闭式环形缺口，生产难度较大，生产效率较低。
发明内容
基于此，有必要克服现有技术的缺陷，提供一种介质滤波器的容性耦合结构、设计方法及介质滤波器，它能够便于生产制造，降低生产难度，并能大大提高生产效率。
其技术方案如下：一种介质滤波器的容性耦合结构，包括：介质块，所述介质块包括相对设置的第一表面与第二表面，所述第一表面上设有第一盲孔，所述第一盲孔的底壁上设有延伸到所述第二表面的调节通孔，所述第一盲孔包括锥形孔段，所述锥形孔段的内径在第一盲孔的底壁至第一盲孔的口部的方向上逐渐增大；及金属层，所述金属层铺设于所述介质块的外壁、所述第一盲孔的孔壁以及调节通孔的孔壁上。
上述的介质滤波器的容性耦合结构，一方面，在锥形孔段与调节通孔的配合下，间距H1的数值越大时，容性耦合带宽越小，这样需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变所述第一盲孔的底壁与所述第二表面之间的间距H1来相应调整即可，具体例如生产制造窄频段的介质滤波器，通过增大第一盲孔的底壁与第二表面之间的间距H1来减小容性耦合的带宽，可以选取数值足够大的间距H1来加工窄频段的介质滤波器，因而能便于生产加工，生产效率较高；另一方面，由于第一盲孔包括锥形孔段，相对于孔壁垂直于第一表面的直通孔而言，锥形孔段的孔壁相对于第一表面倾斜设置，这样既便于将金属层形成于第一盲孔的孔壁上，又方便采用切割工具(包括刀具与激光等等)在锥形孔段的金属层上进行加工操作，进而能提高生产效率。同时，在不改变排腔的前提下，可以将产品的左右零点的平衡度改变。
一种介质滤波器的设计方法，采用了所述的介质滤波器的容性耦合结构，包括如下步骤：当需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变所述第一盲孔的底壁与所述第二表面之间的间距H1来相应调整。
上述的介质滤波器的设计方法，一方面，在锥形孔段与调节通孔的配合下，间距H1的数值越大时，容性耦合带宽越小，这样需要调整所述的介质滤波器的容性耦合结构的容性耦合 带宽时，通过改变所述第一盲孔的底壁与所述第二表面之间的间距H1来相应调整即可，具体例如生产制造窄频段的介质滤波器，通过增大第一盲孔的底壁与第二表面之间的间距H1来减小容性耦合的带宽，可以选取数值足够大的间距H1来加工窄频段的介质滤波器，因而能便于生产加工，生产效率较高；另一方面，由于第一盲孔包括锥形孔段，相对于孔壁垂直于第一表面的直通孔而言，锥形孔段的孔壁相对于第一表面倾斜设置，这样既便于将金属层形成于第一盲孔的孔壁上，又方便采用切割工具(包括刀具与激光等等)在锥形孔段的金属层上进行加工操作，进而能提高生产效率。同时，在不改变排腔的前提下，可以将产品的左右零点的平衡度改变。
一种介质滤波器，包括所述的介质滤波器的容性耦合结构。
上述的介质滤波器，一方面，在锥形孔段与调节通孔的配合下，间距H1的数值越大时，容性耦合带宽越小，这样需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变所述第一盲孔的底壁与所述第二表面之间的间距H1来相应调整即可，具体例如生产制造窄频段的介质滤波器，通过增大第一盲孔的底壁与第二表面之间的间距H1来减小容性耦合的带宽，可以选取数值足够大的间距H1来加工窄频段的介质滤波器，因而能便于生产加工，生产效率较高；另一方面，由于第一盲孔包括锥形孔段，相对于孔壁垂直于第一表面的直通孔而言，锥形孔段的孔壁相对于第一表面倾斜设置，这样既便于将金属层形成于第一盲孔的孔壁上，又方便采用切割工具(包括刀具与激光等等)在锥形孔段的金属层上进行加工操作，进而能提高生产效率。同时，在不改变排腔的前提下，可以将产品的左右零点的平衡度改变。
附图说明
图1为本发明一实施例所述的介质滤波器的容性耦合结构的俯视图；
图2为图1在A-A处的一实施例的剖视图；
图3为图1在A-A处的另一实施例的剖视图；
图4为本发明另一实施例所述的介质滤波器的容性耦合结构的俯视图；
图5为图4在A-A处的一实施例剖视图；
图6为本发明另一实施例所述的介质滤波器的容性耦合结构的仰视图；
图7为图4在A-A处的另一实施例剖视图；
图8为图4在A-A处的又一实施例剖视图；
图9为图4在A-A处的再一实施例剖视图；
图10为图4在A-A处的再又一实施例剖视图；
图11为本发明一实施例所述的介质滤波器的结构示意图；
图12为传统的介质滤波器的容性耦合结构的S参数曲线图；
图13～图28本发明实施例所述的介质滤波器的容性耦合结构的S参数曲线图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似改进，因此本发明不受下面公开的具体实施例的限制。
在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本发明的描述中，需要理解的是，当一个元件被认为是“连接”另一个元件，可以是直接连接到另一个元件或者可能同时存在中间元件。相反，当元件为称作“直接”与另一元件连接时，不存在中间元件。
在一个实施例中，请参阅图1至图3，一种介质滤波器的容性耦合结构，包括介质块10及金属层20。所述介质块10包括相对设置的第一表面11与第二表面12。所述第一表面11上设有第一盲孔13，所述第一盲孔13的底壁上设有延伸到所述第二表面12的调节通孔14，所述第一盲孔13包括锥形孔段131。所述锥形孔段131的内径在第一盲孔13的底壁至第一盲孔13的口部的方向上逐渐增大。所述金属层20铺设于所述介质块10的外壁、所述第一盲孔13的孔壁以及调节通孔14的孔壁上。
上述的介质滤波器的容性耦合结构，一方面，在锥形孔段131与调节通孔14的配合下，间距H1的数值越大时，容性耦合带宽越小，这样需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变所述第一盲孔13的底壁与所述第二表面12之间的间距H1来相应调整即可，具体例如生产制造窄频段的介质滤波器，通过增大第一盲孔13的底壁与第二表面12之间的间距H1来减小容性耦合的带宽，可以选取数值足够大的间距H1来加工窄频段的介质滤波器，因而能便于生产加工，生产效率较高；另一方面，由于第一盲孔13包括锥形孔段131，相对于孔壁垂直于第一表面11的直通孔而言，锥形孔段131的孔壁相对于第一表面11倾斜设置，这样既便于将金属层20形成于第一盲孔13的孔壁上，又方便采用切割工具(包括刀具与激光等等)在锥形孔段131的金属层20上进行加工操作，进而能提高生产效率。同时，在不改变排腔的前提下，可以将产品的左右零点的平衡度改变。
可以理解的是，在第一盲孔13的底壁上设有延伸到第二表面12的调节通孔14，也就是说，第一盲孔13的底壁的部分区域加工形成延伸到第二表面12的调节通孔14，这样调节通孔14的口径大小小于第一盲孔13的底壁的面积大小，如此，第一盲孔13的侧壁与调节通孔14的侧壁形成阶梯状结构，第一盲孔13与与调节通孔14相连通所形成的通孔为阶梯状的通孔。
进一步地，请再参阅图2及图3，所述锥形孔段131的孔壁的金属层20上设有封闭式环形缺口15。如此，一方面，通过调整封闭式环形缺口15在锥形孔段131的孔壁上的设置位置，即改变封闭式环形缺口15与第一盲孔13的孔口端面之间的间距H0时，便能相应调整对称零点的平衡度。同时，在不改变排腔的前提下，可以将产品的左右零点的平衡度改变。
需要解释的是，封闭式环形缺口15的两端相互连通，形成例如封闭形式的圆环状、封闭形式的方形环状或封闭形式的椭圆形环状。而非封闭式环形缺口16设有相对的两端，非封闭式环形缺口16的相对两端之间有间隔，并没有相互连通，也就是，非封闭式环形缺口16例如为非封闭形式的圆环状、非封闭形式的方形环状或非封闭形式的椭圆形环状。此外，封闭式环形缺口15、非封闭式环形缺口16处没有铺设金属层20并露出介质块10的壁面。具体而言，封闭式环形缺口15、非封闭式环形缺口16处的金属层20通过移除的方式露出介质块10的壁面，当然，介质块10对应于封闭式环形缺口15、非封闭式环形缺口16的壁面也可以 不进行电镀或喷涂金属层20，从而露出介质块10的壁面。
在一个实施例中，请参阅图4至图10，所述第一盲孔13的孔壁的金属层20、所述调节通孔14的孔壁的金属层20、所述第一表面11的金属层20与所述第二表面12的金属层20中的至少一处设有绕所述第一盲孔13设置的非封闭式环形缺口16。
具体而言，请参阅图7至图9，所述第一盲孔13的孔壁的金属层20上设有非封闭式环形缺口16。如此，一方面，在保证介质滤波器的容性耦合带宽达到预设值的条件下，由于在第一盲孔13的孔壁的金属层20上设有非封闭式环形缺口16后，可以一定程度地增大封闭式环形缺口15的宽度，例如将封闭式环形缺口15的宽度从0.1mm增加到1mm或2mm，由于宽度为1mm以上的封闭式环形缺口15能便于采用刀具加工，即便于在锥形孔段131的孔壁上形成封闭式环形缺口15；另一方面，在第一盲孔13的孔壁的金属层20上设有非封闭式环形缺口16，非封闭式环形缺口16能用于调整介质滤波器的容性耦合带宽。需要说明的是，非封闭式环形缺口16在第一盲孔13的孔壁上的开设位置不进行限制。
此外，可选地，请参阅图10，所述调节通孔14的孔壁的金属层20上设有非封闭式环形缺口16。如此，也可以将非封闭式环形缺口16形成于调节通孔14的孔壁上。
另外，可选地，请再参阅图6，所述第一表面11与所述第二表面12的其中一表面上设有绕所述第一盲孔13设置的非封闭式环形缺口16。如此，也可以将非封闭式环形缺口16形成于第一表面11或第二表面12上，并绕所述第一盲孔13设置即可，这样相对于在第一盲孔13的孔壁上形成非封闭式环形缺口16，更方便生产制造。
进一步地，参阅图6，所述非封闭式环形缺口16包括相对的第一端和第二端。所述第一端和所述第二端间隔设置，所述第一端至所述第一盲孔13的轴线的连线为第一边界线161，所述第二端至所述第一盲孔13的轴线的连线为第二边界线162，所述第一边界线161与所述第二边界线162之间的夹角为β，且0°<β<360°。如此，沿非封闭式环形缺口16的长度方向，非封闭式环形缺口16由第一端延伸至第二端，第一端与第二端的间隔设置，从而实现非封闭式环形缺口16绕第一盲孔13的部分周向设置而不是完整地绕第一盲孔13的周向设置。同时，可以通过调节第一边界线161与第二边界线162之间的夹角β，从而对容性耦合带宽进行调节，β角度发生变化时，容性耦合带宽的宽与窄相应发生变化。β可以为45°、90°、135°、180°、225°、250°、300°或其他使得非封闭式环形缺口16能够与封闭式环形缺口15相互配合而对容性耦合带宽进行调节的角度。
作为与上述实施例相变形的方案，所述封闭式环形缺口15为两个以上，两个以上所述封闭式环形缺口15沿着所述第一盲孔13的轴线方向间隔设置。
同样地，作为与上述实施例相变形的方案，所述非封闭式环形缺口16也可为两个以上，两个以上所述非封闭式环形缺口16沿着所述第一盲孔13的轴线方向间隔设置。
当然，封闭式环形缺口15与非封闭式环形缺口16也可均为一个。
在一个实施例中，请参阅图5或图9，所述第一盲孔13还包括内径大小保持不变的直通孔段132，所述直通孔段132与所述锥形孔段131的口部相连通。如此，第一盲孔13的孔壁靠近于第二表面12的一部分是相对于第一表面11倾斜的斜壁，另一部分则可以是相对于第一表面11垂直的直壁。
作为一个可选的方案，锥形孔段131可以是一个锥形孔段131，也可以是孔壁倾斜度不同的两个以上锥形孔段131依次连通形成，还可以是两个以上锥形孔段131与一个以上直通 孔段132组合形成，只要锥形孔段131的孔径满足于从一端至另一端逐渐增大或整体上呈逐渐增大的趋势即可。
作为一个可选的方案，第一盲孔13不包括直通孔段132，第一盲孔13为锥形孔段131，如此，无需将第一盲孔13设置有直通孔段132，直接在介质块10上开设形成锥形盲孔即可，制作加工较为方便。
在一个实施例中，所述调节通孔14的口部的孔壁、所述第一盲孔13的口部孔壁均倒斜角设置或倒圆角设置。具体可参阅图5至图10，所述调节通孔14的口部的孔壁、所述第一盲孔13的口部的孔壁例如为45度斜孔壁。
在一个实施例中，请再参阅图2，所述锥形孔段131的孔壁与所述第一盲孔13的轴线之间的夹角为a,且5°<a<85°。进一步地，15°<a<75°。
具体而言，所述锥形孔段131的孔壁与所述第一盲孔13的轴线之间的夹角为45度。如此，一方面，能便于将金属层20铺设形成于锥形孔段131的孔壁上，另一方面，也便于在锥形孔段131的孔壁上的金属层20采用切割工具(包括刀具与激光等等)开设出封闭式环形缺口15与非封闭式环形缺口16，进而能提高生产效率。
作为一个可选的方案，所述锥形孔段131的孔壁与所述第一盲孔13的轴线之间的夹角不限于是5°～85°，在大于0°且小于90°的范围内也可以。
在一个实施例中，请参阅图2，所述第一表面11上还设有间隔的两个第二盲孔17，所述第一盲孔13位于两个所述第二盲孔17之间，所述金属层20还铺设于所述第二盲孔17的孔壁上。
在另一个实施例中，参阅图3，反过来设置也可，所述第二表面12上还设有间隔的两个第二盲孔17，所述调节通孔14位于两个所述第二盲孔17之间，所述金属层20还铺设于所述第二盲孔17的孔壁上。
进一步地，请参阅图5至图10，类似于第一盲孔13的口部的孔壁设计方式，第二盲孔17的口部的孔壁也可以设置倒斜角或倒圆角。
在一个实施例中，一种介质滤波器的设计方法，采用了上述任意一实施例所述的介质滤波器的容性耦合结构，包括如下步骤：当需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变所述第一盲孔13的底壁与所述第二表面12之间的间距H1来相应调整。
上述的介质滤波器的设计方法，一方面，在锥形孔段131与调节通孔14的配合下，间距H1的数值越大时，容性耦合带宽越小，这样需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变所述第一盲孔13的底壁与所述第二表面12之间的间距H1来相应调整即可，具体例如生产制造窄频段的介质滤波器，通过增大第一盲孔13的底壁与第二表面12之间的间距H1来减小容性耦合的带宽，可以选取数值足够大的间距H1来加工窄频段的介质滤波器，因而能便于生产加工，生产效率较高；另一方面，由于第一盲孔13包括锥形孔段131，相对于孔壁垂直于第一表面11的直通孔而言，锥形孔段131的孔壁相对于第一表面11倾斜设置，这样既便于将金属层20形成于第一盲孔13的孔壁上，又方便采用切割工具(包括刀具与激光等等)在锥形孔段131的金属层20上进行加工操作，进而能提高生产效率。同时，在不改变排腔的前提下，可以将产品的左右零点的平衡度改变。
请参阅图14与图19，图14为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图3、图5至图11，H0为1.3mm，H1为2.35mm 时的S参数曲线图；图19为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图3、图5至图11，H0为1.3mm，H1为2.45mm时的S参数曲线图。比较图14与图19可知，当H0均为1.3mm时，H1变大，左右两零点仍较为对称，但相应的耦合带宽变小。
一般地，采用改变介质滤波器的排腔设计的方式来调整对称零点平衡度。然而，重新进行设计排腔结构时，一方面增大排腔设计工作量，排腔设计难度较大，另一方面改变排腔结构后，将使得介质滤波器的性能指标受到严重影响。如此可见，介质滤波器的容性耦合结构的对称零点平衡度的调节相当困难，进而导致生产效率较低，最终大大限制了介质滤波器的应用。
在一个实施例中，当需要改变对称零点的平衡度时，通过改变封闭式环形缺口15与第一盲孔13的孔口端面之间的间距H0来相应调整。
请参阅图12，图12为传统的8腔双零点对称结构下的介质滤波器的容性耦合结构的S参数曲线图，传统的8腔双零点对称结构下的介质滤波器的耦合通孔的整个孔壁垂直于介质块10的表面，从图12可以看出，左右两个对称零点高低不平，如果需要进行对称零点平衡度调整时，则需要通过调整排腔结构设计来实现。
请参阅图13，图13为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.08mm，H1为2.3mm时的S参数曲线图，从图13可以看出，左右两个对称零点呈现出左低右高的效果，左右两个零点的差值由传统的18.8dB变成为0.98dB，趋近于平衡。
请参阅图14，图14为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参图2、图5、图7、图9至图11，H0为1.3mm，H1为2.35mm时的S参数曲线图，从图14可以看出，左右两个对称零点呈现出左低右高的效果，左右两个零点的差值为0.03B，更趋近于平衡，并小于H0为1.08mm时的左右两个零点的差值，即左右两个零点的差值进一步减小。
请参阅图15，图15为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.76mm，H1为2.35mm时的S参数曲线图，从图15可以看出，左右两个对称零点呈现出左高右低的效果，左右两个零点的差值为2.16dB。
请参阅图16，图16为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.83mm，H1为2.35mm时的S参数曲线图，从图16可以看出，左右两个对称零点呈现出左高右低的效果，左右两个零点的差值为6.79dB。
请参阅图17，图17为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.83mm，H1为2.4mm时的S参数曲线图，从图17可以看出，左右两个对称零点呈现出左高右低的效果，左右两个零点的差值为6.59dB。
请参阅图18，图18为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.83mm，H1为2.45mm时的S参数曲线图，从图18可以看出，左右两个对称零点呈现出左高右低的效果，左右两个 零点的差值为7.67dB。
请参阅图19，图19为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.3mm，H1为2.45mm时的S参数曲线图，从图19可以看出，左右两个对称零点呈现出左低右高的效果，左右两个零点的差值为0.367dB。
请参阅图20，图20为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.25mm，H1为2.45mm时的S参数曲线图，从图20可以看出，左右两个对称零点呈现出左低右高的效果，左右两个零点的差值为3.75dB。
请参阅图21，图21为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.2mm，H1为2.45mm时的S参数曲线图，从图20可以看出，左右两个对称零点呈现出左低右高的效果，左右两个零点的差值为10.36dB。
请参阅图22，图22为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图2、图5、图7、图9至图11，H0为1.13mm，H1为2.45mm时的S参数曲线图，从图22可以看出，左右两个对称零点呈现出左低右高的效果，左右两个零点的差值为18.75dB。
也就是说，在H1不变的情况下，H0从一个较大的数值，逐渐降低到左右零点相互平衡时对应的数值的过程中，左右两个零点的差值逐渐减小，且呈现出例如左高右低的效果；H0从左右零点相互平衡时对应的数值进一步减小时，左右两个零点的差值逐渐增大，且呈现出例如左低右高的效果。
请参阅图23，图23为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图3、图8及图11，H0为1.21mm，H1为2.45mm时的S参数曲线图，图3与图8中的介质滤波器的容性耦合结构相对于图2、图5、图7、图9及图10中的而言，锥形孔段131的朝向相反，从图23可以看出，左右两个对称零点趋近于平衡，左右两个零点的差值为0.06dB。也就是说，在锥形孔段131的朝向相反时，在不改变排腔的前提下，也可以将产品的左右零点的平衡度改变。类似地，改变H0的大小时，亦有以上平衡调节的效果，进一步可参阅图24与图25。
请参阅图24，图24为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图3、图8及图11，H0为1.35mm，H1为2.45mm时的S参数曲线图，从图24可以看出，左右两个零点呈现出左高右低的效果。
请参阅图25，图25为一实施例8腔双零点对称结构下的介质滤波器的容性耦合结构，该介质滤波器的容性耦合结构可参阅图3、图8及图11，H0为1.11mm，H1为2.45mm时的S参数曲线图，从图25可以看出，左右两个零点呈现出左低又高的效果。
进一步地，第一盲孔13的孔壁的金属层20、调节通孔14的孔壁的金属层20、第一表面11的金属层20与第二表面12的金属层20中的至少一处设有绕第一盲孔13设置的非封闭式环形缺口16；
非封闭式环形缺口16包括相对的第一端和第二端。所述第一端和所述第二端间隔设置，所述第一端至所述第一盲孔13的轴线的连线为第一边界线161，所述第二端至所述第一盲孔 13的轴线的连线为第二边界线162，所述第一边界线161与所述第二边界线162之间的夹角为β。
当需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变非封闭式环形缺口16的大小来改变β，相应调整容性耦合带宽。
具体而言，当需要减小介质滤波器的容性耦合结构的容性耦合带宽时，则增大β，可参阅图26至图28。其中，图26示意出的是一实施例所述的介质滤波器的容性耦合结构中H0为1.25mm，β为260度时的S参数曲线图；图27示意出的是一实施例所述的介质滤波器的容性耦合结构中H0为1.25mm，β为290度时的S参数曲线图；图28示意出的是一实施例所述的介质滤波器的容性耦合结构中H0为1.25mm，β为310度时的S参数曲线图。从图26至图28可以看出，在H0均相同时，β分别为260°、290°与310°时，容性耦合带宽分别为30dB、40dB及50dB，也就是说，当增大β时，能减小介质滤波器的容性耦合结构的容性耦合带宽。
在一个实施例中，请再参阅图11，一种滤波器，包括以上任意一实施例所述的介质滤波器的容性耦合结构。需要说明的是，该滤波器为4腔以上双零点对称结构的介质滤波器，例如可以是4腔双零点对称结构的介质滤波器，5腔双零点对称结构的介质滤波器，6腔双零点对称结构的介质滤波器，7腔双零点对称结构的介质滤波器，或者8腔双零点对称结构的介质滤波器。
上述的介质滤波器，一方面，在锥形孔段131与调节通孔14的配合下，间距H1的数值越大时，容性耦合带宽越小，这样需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变所述第一盲孔13的底壁与所述第二表面12之间的间距H1来相应调整即可，具体例如生产制造窄频段的介质滤波器，通过增大第一盲孔13的底壁与第二表面12之间的间距H1来减小容性耦合的带宽，可以选取数值足够大的间距H1来加工窄频段的介质滤波器，因而能便于生产加工，生产效率较高；另一方面，由于第一盲孔13包括锥形孔段131，相对于孔壁垂直于第一表面11的直通孔而言，锥形孔段131的孔壁相对于第一表面11倾斜设置，这样既便于将金属层20形成于第一盲孔13的孔壁上，又方便采用切割工具(包括刀具与激光等等)在锥形孔段131的金属层20上进行加工操作，进而能提高生产效率。同时，在不改变排腔的前提下，可以将产品的左右零点的平衡度改变。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (11)

  1. 一种介质滤波器的容性耦合结构，其特征在于，包括：
    介质块，所述介质块包括相对设置的第一表面与第二表面，所述第一表面上设有第一盲孔，所述第一盲孔的底壁上设有延伸到所述第二表面的调节通孔，所述第一盲孔包括锥形孔段，所述锥形孔段的内径在第一盲孔的底壁至第一盲孔的口部的方向上逐渐增大；及
    金属层，所述金属层铺设于所述介质块的外壁、所述第一盲孔的孔壁以及调节通孔的孔壁上。
  2. 根据权利要求1所述的介质滤波器的容性耦合结构，其特征在于，所述锥形孔段的孔壁的金属层上设有封闭式环形缺口。
  3. 根据权利要求2所述的介质滤波器的容性耦合结构，其特征在于，所述第一盲孔的孔壁的金属层、所述调节通孔的孔壁的金属层、所述第一表面的金属层与所述第二表面的金属层中的至少一处设有绕所述第一盲孔设置的非封闭式环形缺口。
  4. 根据权利要求3所述的介质滤波器的容性耦合结构，其特征在于，所述非封闭式环形缺口包括相对的第一端和第二端，所述第一端和所述第二端间隔设置，所述第一端至所述第一盲孔的轴线的连线为第一边界线，所述第二端至所述第一盲孔的轴线的连线为第二边界线，所述第一边界线与所述第二边界线之间的夹角为β，且0°<β<360°。
  5. 根据权利要求3所述的介质滤波器的容性耦合结构，其特征在于，所述封闭式环形缺口为两个以上，两个以上所述封闭式环形缺口沿着所述第一盲孔的轴线方向间隔设置；所述非封闭式环形缺口为两个以上，两个以上所述非封闭式环形缺口沿着所述第一盲孔的轴线方向间隔设置。
  6. 根据权利要求3所述的介质滤波器的容性耦合结构，其特征在于，所述第一盲孔还包括内径大小保持不变的直通孔段，所述直通孔段与所述锥形孔段的口部相连通。
  7. 根据权利要求6所述的介质滤波器的容性耦合结构，其特征在于，所述调节通孔的口部的孔壁、所述第一盲孔的口部孔壁均倒斜角设置或倒圆角设置；所述锥形孔段的孔壁与所述第一盲孔的轴线之间的夹角为a,且5°<a<85°。
  8. 根据权利要求1至7任意一项所述的介质滤波器的容性耦合结构，其特征在于，所述第一表面上还设有间隔的两个第二盲孔，所述第一盲孔位于两个所述第二盲孔之间，所述金属层还铺设于所述第二盲孔的孔壁上；或者，所述第二表面上还设有间隔的两个第二盲孔，所述调节通孔位于两个所述第二盲孔之间，所述金属层还铺设于所述第二盲孔的孔壁上。
  9. 一种介质滤波器的设计方法，其特征在于，采用了如权利要求1至8任意一项所述的介质滤波器的容性耦合结构，包括如下步骤：
    当需要调整所述的介质滤波器的容性耦合结构的容性耦合带宽时，通过改变所述第一盲孔的底壁与所述第二表面之间的间距H1来相应调整。
  10. 根据权利要求9所述的介质滤波器的设计方法，其特征在于，当需要改变对称零点的平衡度时，通过改变封闭式环形缺口与第一盲孔的孔口端面之间的间距H0来相应调整。
  11. 一种介质滤波器，其特征在于，包括如权利要求1至8任意一项所述的介质滤波器的容性耦合结构。
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