WO2021053885A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2021053885A1
WO2021053885A1 PCT/JP2020/020548 JP2020020548W WO2021053885A1 WO 2021053885 A1 WO2021053885 A1 WO 2021053885A1 JP 2020020548 W JP2020020548 W JP 2020020548W WO 2021053885 A1 WO2021053885 A1 WO 2021053885A1
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WIPO (PCT)
Prior art keywords
substrate
unit
liquid
held
processing
Prior art date
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PCT/JP2020/020548
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English (en)
Japanese (ja)
Inventor
大輝 日野出
喬 太田
高橋　光和
本庄　一大
佑介 秋月
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to CN202080064773.XA priority Critical patent/CN114402420A/zh
Priority to US17/640,858 priority patent/US20220344176A1/en
Priority to KR1020227008922A priority patent/KR102619560B1/ko
Publication of WO2021053885A1 publication Critical patent/WO2021053885A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1039—Recovery of excess liquid or other fluent material; Controlling means therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.
  • the substrates include, for example, semiconductor wafers, liquid crystal display substrates, organic EL (Electroluminescence) substrates, FPD (Flat Panel Display) substrates, optical display substrates, magnetic disk substrates, optical disk substrates, magneto-optical disk substrates, etc.
  • Patent Document 1 discloses a substrate processing apparatus.
  • the substrate processing apparatus includes a spin chuck (41), a first cup (10), a second cup (20), and a third cup (30).
  • the spin chuck (41) holds the semiconductor wafer (100).
  • the spin chuck (41) is rotatable.
  • the first cup (10), the second cup (20), and the third cup (30) each receive the processing liquid scattered from the semiconductor wafer (100).
  • the first cup (10), the second cup (20), and the third cup (30) can be moved in the vertical direction, respectively.
  • the substrate processing device includes a head (60), a nozzle (82), and a nozzle (84).
  • the head (60) supplies a mixed solution of sulfuric acid and hydrogen peroxide solution (sulfric acid hydrogen peroxide mixture) to the semiconductor wafer (100).
  • the nozzle (82) supplies pure water to the semiconductor wafer (100).
  • the nozzle (84) supplies the semiconductor wafer (100) with a treatment liquid containing aqueous ammonia and hydrogen peroxide.
  • SPM sulfuric acid and hydrogen peroxide solution
  • SC1 The treatment liquid containing the aqueous ammonia and the aqueous hydrogen peroxide
  • the substrate processing apparatus includes a processing chamber (50).
  • the processing chamber (50) accommodates a spin chuck (41), a first cup (10), a second cup (20), a third cup (30), a head (60), a nozzle (82), and a nozzle (84). To do.
  • the head (60) supplies the SPM to the semiconductor wafer (100), it receives the SPM between the first cup (10) and the second cup (20).
  • the first cup (10) is arranged higher than the second cup (20). Specifically, the first cup (10) is arranged in the first position. When the first cup (10) is in the first position, the upper end of the first cup (10) is in contact with the upper wall of the processing chamber (50).
  • the second cup (20) is arranged at a position lower than the semiconductor wafer (100) held by the spin chuck (41).
  • the nozzle (84) supplies SC1 to the semiconductor wafer (100), it receives SC1 between the first cup (10) and the second cup (20).
  • the first cup (10) is arranged higher than the second cup (20). Specifically, the first cup (10) is arranged in a second position lower than the first position. When the first cup (10) is in the second position, the upper end of the first cup (10) does not contact the upper wall of the processing chamber (50).
  • the nozzle (82) supplies pure water to the semiconductor wafer (100), it receives pure water between the second cup (20) and the third cup (30).
  • the second cup (20) is arranged higher than the third cup (30).
  • the substrate has become thinner and larger in diameter.
  • the thickness of the substrate is thin and the diameter of the substrate is large, the amount of deflection of the substrate is remarkably large. Therefore, it may be difficult for the conventional substrate processing apparatus to properly collect the processing liquid.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of appropriately processing a substrate.
  • the present invention has the following configuration in order to achieve such an object. That is, the present invention is a substrate processing apparatus.
  • a processing unit that processes the substrate and A control unit that controls the processing unit and With The processing unit A board holding part that holds the board in a horizontal position, A rotary drive unit that rotates the substrate holding unit, A processing liquid supply unit that supplies the processing liquid to the substrate held by the substrate holding unit, A liquid containing two or more guards arranged so as to surround the side of the substrate holding portion, and a liquid inlet that is partitioned by the guards and opened to the substrate held by the substrate holding portion.
  • the control unit controls the height position of the upper end of the liquid introduction port and the height position of the lower end of the liquid introduction port. It is a substrate processing device that changes at least one of the above.
  • the processing unit includes a substrate holding unit, a rotation drive unit, a processing liquid supply unit, a liquid recovery unit, and a guard drive unit.
  • the board holding portion holds the board.
  • the rotation drive unit rotates the substrate holding unit. As a result, the substrate held by the substrate holding portion rotates.
  • the processing liquid supply unit supplies the processing liquid to the substrate held by the substrate holding unit.
  • the treatment liquid scatters from the substrate.
  • the liquid recovery unit collects the processing liquid scattered from the substrate.
  • the liquid recovery unit includes two or more guards. Each guard is arranged so as to surround the side of the substrate holding portion.
  • the liquid recovery unit further includes a liquid inlet. The liquid inlet is partitioned by a guard. The liquid inlet is open to the substrate held by the substrate holding portion.
  • the liquid introduction port introduces the processing liquid scattered from the substrate into the liquid recovery unit.
  • the guard drive unit moves at least one or more guards in the vertical direction. By moving at least one or more guards in the vertical direction, the height position of the upper end of the liquid introduction port and the height position of the lower end of the liquid introduction port can be changed.
  • the control unit controls the processing unit.
  • the control unit controls the guard drive unit according to the shape of the substrate held by the substrate holding unit.
  • the control unit changes at least one of the height position of the upper end of the liquid introduction port and the height position of the lower end of the liquid introduction port. Therefore, the liquid inlet can be adjusted to an appropriate height position according to the shape of the substrate held by the substrate holding portion. Therefore, regardless of the shape of the substrate held by the substrate holding portion, the liquid collecting portion can suitably recover the processing liquid scattered from the substrate. Therefore, the processing unit can appropriately process the substrate.
  • this substrate processing apparatus can appropriately process the substrate.
  • control unit changes the height position of the upper end of the liquid introduction port according to the thickness of the main portion of the substrate located inside the peripheral edge of the substrate.
  • the liquid recovery unit can suitably recover the processing liquid scattered from the substrate regardless of the thickness of the main portion of the substrate. Therefore, the processing unit can appropriately process the substrate regardless of the thickness of the main portion of the substrate.
  • the upper end of the liquid introduction port has a second thickness in which the substrate held by the substrate holding portion is larger than the first thickness. It is preferable that the liquid introduction port is higher than the upper end of the liquid introduction port.
  • the substrate is relatively thin.
  • the upper end of the liquid inlet is arranged at a relatively high position. Therefore, the liquid recovery unit can suitably recover the processing liquid scattered from the substrate.
  • the substrate is relatively thick.
  • the upper end of the liquid inlet is located at a relatively low position. Therefore, the liquid recovery unit can suitably recover the processing liquid scattered from the substrate. Therefore, the processing unit can appropriately process both a relatively thin substrate and a relatively thick substrate.
  • the board is A first substrate having a recess formed by a main portion of the substrate located inside the peripheral edge of the substrate recessed from the peripheral edge of the substrate.
  • a second substrate having no recess and Including It is preferable that the control unit changes the height position of the upper end of the liquid introduction port depending on whether the substrate held by the substrate holding unit is the first substrate or the second substrate. Regardless of whether the substrate is the first substrate or the second substrate, the liquid recovery unit can suitably recover the processing liquid scattered from the substrate. Therefore, the processing unit can appropriately process both the first substrate and the second substrate.
  • the upper end of the liquid introduction port when the first substrate is held by the substrate holding portion is compared with the upper end of the liquid introduction port when the second substrate is held by the substrate holding portion. High is preferable.
  • the upper end of the liquid inlet is arranged at a relatively high position. Therefore, the liquid recovery unit can suitably recover the processing liquid scattered from the first substrate.
  • the upper end of the liquid inlet is arranged at a relatively low position. Therefore, the liquid recovery unit can suitably recover the processing liquid scattered from the second substrate.
  • the control unit changes the height position of the upper end of the liquid introduction port depending on whether or not the processing liquid supply unit supplies the processing liquid to the upper surface of the substrate held by the substrate holding unit. Is preferable. Whether or not the substrate held by the substrate holding portion has an upper recess is a matter that affects the direction of the processing liquid scattered from the substrate. Whether or not the processing liquid supply unit supplies the processing liquid to the upper surface of the substrate held by the substrate holding unit also affects the direction of the processing liquid scattered from the substrate.
  • the control unit changes the height position of the upper end of the liquid inlet in consideration of both matters. Therefore, the upper end of the liquid inlet can be adjusted to an appropriate height position. Therefore, the liquid recovery unit can suitably recover the processing liquid scattered from the substrate.
  • the upper surface is the surface of the substrate facing upward when the substrate is held by the substrate holding portion.
  • the upper recess is a recess formed on the upper surface of the substrate.
  • the recess is formed by the main portion of the substrate being recessed from the peripheral edge of the substrate.
  • the liquid introduction port when the processing liquid supply unit supplies the processing liquid to the upper surface of the substrate held by the substrate holding portion and the substrate held by the substrate holding portion has the upper recess.
  • the upper end is higher than the upper end of the liquid introduction port when the substrate held by the substrate holding portion does not have the upper recess.
  • the upper end of the liquid introduction port when the substrate held by the substrate holding portion has the upper recess and the processing liquid supply portion supplies the treatment liquid to the upper surface of the substrate is the substrate holding portion. It is preferable that the height is higher than the upper end of the liquid introduction port when the treatment liquid supply unit does not supply the treatment liquid to the upper surface of the substrate held on the substrate.
  • the upper surface of the peripheral portion of the substrate is arranged at a position higher than the upper surface of the main portion of the substrate.
  • the upper surface of the substrate is substantially flat. More specifically, the upper surface at the peripheral edge of the substrate is arranged at substantially the same height as the upper surface at the main portion of the substrate.
  • the "first upper processing condition” means that the substrate held by the substrate holding portion has an upper recess and the processing liquid supply unit supplies the processing liquid to the upper surface of the substrate held by the substrate holding portion.
  • the treatment liquid flows upward from the main portion to the peripheral portion along the upper surface of the substrate. Therefore, under the first upper treatment condition, the treatment liquid tends to scatter upward from the substrate.
  • the upper end of the liquid introduction port is arranged at a relatively high position. Therefore, even under the first upper treatment condition, the liquid recovery unit can suitably recover the treatment liquid scattered from the substrate.
  • the treatment liquid is less likely to scatter upward from the substrate as compared with the first upper treatment condition.
  • the upper end of the liquid introduction port is arranged at a lower position as compared with the first upper treatment condition. Therefore, even when the substrate held by the substrate holding portion does not have an upper recess, the liquid collecting portion can suitably recover the processing liquid scattered from the substrate.
  • the treatment liquid supply unit does not supply the treatment liquid to the upper surface of the substrate, the treatment liquid is less likely to scatter upward from the substrate as compared with the first upper treatment condition.
  • the upper end of the liquid introduction port is arranged at a lower position than the first upper treatment condition. Therefore, even when the processing liquid supply unit does not supply the processing liquid to the upper surface of the substrate held by the substrate holding unit, the liquid recovery unit can suitably recover the processing liquid scattered from the substrate.
  • the upper end of the liquid introduction port is formed on the upper surface of the substrate held by the substrate holding portion. It is preferably lower than the upper end of the liquid introduction port when the liquid supply unit supplies the treatment liquid.
  • the treatment liquid is less likely to scatter upward from the substrate than when the treatment liquid supply unit supplies the treatment liquid to the upper surface of the substrate.
  • the upper end of the liquid introduction port is arranged at a lower position than when the treatment liquid supply unit supplies the treatment liquid to the upper surface of the substrate. Therefore, when the processing liquid supply unit does not supply the treatment liquid to the upper surface of the substrate held by the substrate holding unit, the liquid recovery unit can more preferably recover the treatment liquid scattered from the substrate.
  • the control unit changes the height position of the lower end of the liquid introduction port depending on whether or not the treatment liquid supply unit supplies the treatment liquid to the lower surface of the substrate held by the substrate holding unit. Is preferable. Whether or not the substrate held by the substrate holding portion has a lower recess is a matter that has a great influence on the direction of the processing liquid scattered from the substrate.
  • the processing liquid supply unit supplies the processing liquid to the lower surface of the substrate held by the substrate holding unit also has a great influence on the direction of the processing liquid scattered from the substrate.
  • the control unit changes the height position of the lower end of the liquid inlet in consideration of both matters. Therefore, the lower end of the liquid inlet can be adjusted to an appropriate height position. Therefore, the liquid recovery unit can suitably recover the processing liquid scattered from the substrate.
  • the lower surface is the surface of the substrate that faces downward when the substrate is held by the substrate holding portion.
  • the lower recess is a recess formed on the lower surface of the substrate.
  • the recess is formed by the main portion of the substrate being recessed from the peripheral edge of the substrate.
  • the liquid introduction port when the processing liquid supply unit supplies the processing liquid to the lower surface of the substrate held by the substrate holding portion and the substrate held by the substrate holding portion has the lower recess.
  • the lower end is lower than the lower end of the liquid introduction port when the substrate held by the substrate holding portion does not have the lower recess.
  • the liquid introduction port when the processing liquid supply unit supplies the processing liquid to the lower surface of the substrate held by the substrate holding portion and the substrate held by the substrate holding portion has the lower recess.
  • the lower end is preferably lower than the lower end of the liquid introduction port when the treatment liquid supply unit does not supply the treatment liquid to the lower surface of the substrate held by the substrate holding portion.
  • the lower surface of the peripheral portion of the substrate is arranged at a position lower than the lower surface of the main portion of the substrate.
  • the lower surface of the substrate is substantially flat. More specifically, the lower surface at the peripheral edge of the substrate is arranged at substantially the same height as the lower surface at the main portion of the substrate.
  • the "first pretreatment condition” means that the substrate held by the substrate holding portion has a lower recess and the processing liquid supply unit supplies the processing liquid to the lower surface of the substrate held by the substrate holding portion. That is. Under the first pretreatment condition, the treatment liquid flows downward from the main portion to the peripheral portion along the lower surface of the substrate. Therefore, under the first pretreatment condition, the treatment liquid tends to scatter downward from the substrate. Under the first pretreatment condition, the lower end of the liquid inlet is arranged at a relatively low position. Therefore, even under the first pretreatment condition, the liquid recovery unit can suitably recover the treatment liquid scattered from the substrate.
  • the treatment liquid is less likely to scatter downward from the substrate as compared with the first pretreatment condition.
  • the lower end of the liquid inlet is arranged at a higher position than in the first pretreatment condition. Therefore, even when the substrate held by the substrate holding portion does not have a lower recess, the liquid collecting portion can suitably recover the processing liquid scattered from the substrate.
  • the treatment liquid supply unit does not supply the treatment liquid to the lower surface of the substrate, the treatment liquid is less likely to scatter downward from the substrate as compared with the first lower treatment condition.
  • the lower end of the liquid introduction port is arranged at a higher position than the first lower treatment condition. Therefore, even when the processing liquid supply unit does not supply the processing liquid to the lower surface of the substrate held by the substrate holding unit, the liquid recovery unit can suitably recover the processing liquid scattered from the substrate.
  • the substrate includes a recess formed by the main portion of the substrate located inside the peripheral edge of the substrate being recessed from the peripheral edge of the substrate.
  • the control unit is at least at least the height position of the upper end of the liquid introduction port and the height position of the lower end of the liquid introduction port according to the depth of the main part of the substrate with respect to the peripheral edge portion of the substrate. It is preferable to change either one.
  • the liquid recovery unit can suitably recover the processing liquid scattered from the substrate regardless of the depth of the main portion of the substrate with respect to the peripheral edge portion of the substrate. Therefore, the processing unit can appropriately process the substrate regardless of the depth of the main portion of the substrate with respect to the peripheral edge portion of the substrate.
  • the board is A recess formed by the main portion of the substrate located inside the peripheral edge of the substrate being recessed from the peripheral edge of the substrate.
  • the control unit changes at least one of the height position of the upper end of the liquid introduction port and the height position of the lower end of the liquid introduction port according to the angle of the wall portion.
  • the liquid recovery unit can suitably recover the processing liquid scattered from the substrate regardless of the angle of the wall portion. Therefore, the processing unit can appropriately process the substrate regardless of the angle of the wall portion.
  • the substrate holding portion is With the plate A support portion that projects upward from the upper surface of the plate, contacts the lower surface of the substrate, and supports the substrate at a position higher than the upper surface of the plate. A gas outlet formed on the upper surface of the plate and blowing gas between the upper surface of the plate and the lower surface of the substrate supported by the support portion to suck the substrate downward. It is preferable to provide.
  • the substrate holding portion includes a plate, a support portion, and a gas outlet. Therefore, the substrate holding portion can preferably hold the substrate.
  • the control unit A storage unit that stores a plurality of set values with respect to at least one of the height position of the upper end of the liquid introduction port and the height position of the lower end of the liquid introduction port.
  • a setting unit that switches between a plurality of the set values stored in the storage unit according to the shape of the substrate held by the substrate holding unit. It is preferable to provide.
  • the control unit includes a storage unit and a setting unit. Therefore, the control unit can suitably determine at least one of the height position of the upper end of the liquid introduction port and the height position of the lower end of the liquid introduction port.
  • the present invention is a substrate processing method.
  • the step of holding the board in a horizontal position by the board holding part By moving the guard arranged so as to surround the side of the substrate holding portion in the vertical direction according to the shape of the substrate held by the substrate holding portion, the guard is partitioned by the guard and held by the substrate holding portion.
  • the guard moves in the vertical direction according to the shape of the substrate held by the substrate holding portion.
  • the liquid inlet is partitioned by a guard.
  • the liquid inlet is open to the substrate held by the substrate holding portion. Therefore, the liquid inlet can be adjusted to an appropriate height position according to the shape of the substrate held by the substrate holding portion.
  • the liquid introduction port can be arranged at an appropriate height position so that the processing liquid scattered from the substrate passes through the liquid introduction port. Therefore, regardless of the shape of the substrate held by the substrate holding portion, the processing liquid scattered from the substrate can be received by the guard. Therefore, the substrate can be processed appropriately.
  • this substrate processing method can appropriately process the substrate.
  • the substrate can be appropriately processed.
  • FIG. 4 (a) is a cross-sectional view of an A-type substrate
  • FIG. 4 (b) is a cross-sectional view of a B-type substrate
  • FIG. 4 (c) is a cross-sectional view of a C-type substrate.
  • It is a figure which shows typically the structure of the processing unit.
  • It is a flowchart which shows the procedure of control of a control part and operation of a processing unit.
  • 7 (a) and 7 (b) are diagrams schematically showing the processing unit, respectively.
  • FIG. 1 is a plan view of the substrate processing apparatus of the first embodiment.
  • the substrate processing apparatus 1 processes a substrate (for example, a semiconductor wafer) W.
  • the substrate W includes, for example, a semiconductor wafer, a liquid crystal display substrate, an organic EL (Electroluminescence) substrate, an FPD (Flat Panel Display) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, and a magneto-optical disk substrate. , A substrate for a photomask, or a substrate for a solar cell.
  • a semiconductor wafer for example, a semiconductor wafer, a liquid crystal display substrate, an organic EL (Electroluminescence) substrate, an FPD (Flat Panel Display) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, and a magneto-optical disk substrate.
  • a substrate for a photomask or a substrate for a solar cell.
  • the substrate processing device 1 includes an indexer unit 2.
  • the indexer unit 2 includes a plurality of (for example, four) carrier mounting units 3.
  • Each carrier mounting unit 3 mounts one carrier C.
  • the carrier C accommodates a plurality of substrates W.
  • Carrier C is, for example, FOUP (front opening unified pod).
  • Carrier C has a barcode (not shown).
  • the barcode is, for example, an identifier for identifying the carrier C.
  • the barcode is, for example, an identifier for identifying the substrate W in the carrier C.
  • the barcode is attached to the outer surface of the carrier C, for example.
  • the indexer unit 2 is provided with a barcode reader 4.
  • the bar code reader 4 reads the bar code attached to the carrier C mounted on the carrier mounting unit 3.
  • the barcode reader 4 is attached to, for example, the carrier mounting portion 3.
  • the indexer unit 2 includes a transport mechanism 5.
  • the transport mechanism 5 can access the carrier C mounted on each carrier mounting unit 3.
  • the transport mechanism 5 transports the substrate W to the carrier C mounted on the carrier mounting portion 3.
  • the transport mechanism 5 includes a hand 5a and a hand drive unit 5b.
  • the hand 5a supports one substrate W in a horizontal posture.
  • the hand drive unit 5b is connected to the hand 5a.
  • the hand drive unit 5b moves the hand 5a.
  • the hand drive unit 5b moves the hand 5a in parallel in the horizontal direction.
  • the hand drive unit 5b moves the hand 5a in parallel in the vertical direction.
  • the hand drive unit 5b rotates and moves the hand 5a around the rotation axis.
  • the rotation axis of the hand 5a is, for example, parallel to the vertical direction.
  • the indexer unit 2 includes a presence / absence detection unit 6.
  • the presence / absence detection unit 6 detects whether or not the hand 5a supports the substrate W. That is, the presence / absence detection unit 6 detects whether or not the transport mechanism 5 is transporting the substrate W.
  • the presence / absence detection unit 6 is attached to, for example, the hand 5a.
  • the substrate processing device 1 includes a processing block 11.
  • the processing block 11 is connected to the indexer unit 2.
  • the processing block 11 includes a mounting portion 12.
  • the mounting unit 12 mounts a plurality of substrates W.
  • the processing block 11 includes a shape detection unit 13.
  • the shape detection unit 13 detects the shape of the substrate W mounted on the mounting unit 12.
  • the shape detection unit 13 is, for example, an image sensor that captures an image of the substrate W.
  • the image sensor is, for example, a one-dimensional image sensor or a two-dimensional image sensor.
  • the shape detection unit 13 is attached to, for example, the mounting unit 12.
  • the processing block 11 includes a plurality of processing units 14. Each processing unit 14 processes one substrate W.
  • the processing block 11 includes a transport mechanism 15.
  • the transport mechanism 15 has access to the mounting unit 12 and all the processing units 14.
  • the transport mechanism 15 transports the substrate W to the mounting unit 12 and the processing unit 14.
  • the transport mechanism 15 includes a hand 15a and a hand drive unit 15b.
  • the hand 15a supports one substrate W in a horizontal posture.
  • the hand drive unit 15b is connected to the hand 15a.
  • the hand drive unit 15b moves the hand 15a.
  • the hand drive unit 15b moves the hand 15a in parallel in the horizontal direction.
  • the hand drive unit 15b moves the hand 15a in parallel in the vertical direction.
  • the hand drive unit 15b rotates and moves the hand 15a around the rotation axis.
  • the rotation axis of the hand 15a is, for example, parallel to the vertical direction.
  • the processing block 11 includes a presence / absence detection unit 16.
  • the presence / absence detection unit 16 detects whether or not the hand 15a supports the substrate W. That is, the presence / absence detection unit 16 detects whether or not the transport mechanism 15 is transporting the substrate W.
  • the presence / absence detection unit 16 is attached to, for example, the hand 15a.
  • the mounting portion 12 is arranged between the transport mechanism 5 and the transport mechanism 15.
  • the transport mechanism 5 can also access the mounting portion 12.
  • the transport mechanism 5 transports the substrate W to the mounting portion 12.
  • the mounting unit 12 mounts the substrate W transported between the transport mechanism 5 and the transport mechanism 15.
  • the board processing device 1 includes an input unit 17.
  • the user can input information into the input unit 17.
  • the input unit 17 is attached to, for example, the outer surface of the indexer unit 2.
  • the substrate processing device 1 includes a control unit 18.
  • the control unit 18 acquires the detection results of the barcode reader 4, the presence / absence detection units 6 and 16, and the shape detection unit 13.
  • the control unit 18 acquires the information input to the input unit 17.
  • the control unit 18 controls the transport mechanisms 5 and 15 and the processing unit 14.
  • FIG. 2 is a control block diagram of the substrate processing device 1.
  • the control unit 18 is communicably connected to the bar code reader 4, the presence / absence detection units 6 and 16, the shape detection unit 13, the input unit 17, the transfer mechanisms 5 and 15, and the processing unit 14.
  • the control unit 18 includes a storage unit 18a, a setting unit 18b, and a drive circuit 18c.
  • the storage unit 18a stores various types of information in advance.
  • the information stored in the storage unit 18a is, for example, a set value relating to the operating conditions of the transport mechanisms 5 and 15 and the processing unit 14.
  • the information stored in the storage unit 18a is, for example, a processing recipe (processing program) for processing the substrate W.
  • the information stored in the storage unit 18a is, for example, information for identifying each substrate W.
  • the setting unit 18b is a transfer mechanism 5 or 15 based on the information acquired from the barcode reader 4, the presence / absence detection units 6 and 16, the shape detection unit 13 and the input unit 17, and the information stored in advance in the storage unit 18a. And the operating conditions of the processing unit 14 are set.
  • the drive circuit 18c outputs a drive command to the transfer mechanisms 5 and 15 and the processing unit 14 based on the operating conditions set by the setting unit 18b.
  • the control unit 18 is realized by, for example, a central processing unit (CPU) that executes various processes, a RAM (Random-Access Memory) that is a work area for arithmetic processing, a storage medium such as a fixed disk, and the like.
  • CPU central processing unit
  • RAM Random-Access Memory
  • the transport mechanism 5 transports the substrate W from the carrier C on the carrier mounting portion 3 to the mounting portion 12.
  • the transport mechanism 15 transports the substrate W from the mounting portion 12 to the processing unit 14.
  • the processing unit 14 processes the substrate W.
  • the transport mechanism 15 transports the substrate W from the processing unit 14 to the mounting portion 12.
  • the transport mechanism 5 transports the substrate W from the mounting portion 12 to the carrier C on the carrier mounting portion 3.
  • FIG. 3 is a plan view of the substrate W.
  • the basic shape of the substrate W will be described.
  • the substrate W has a thin flat plate shape.
  • the substrate W has a substantially circular shape in a plan view.
  • the substrate W has a peripheral portion 22 and a main portion 23.
  • the main portion 23 is a portion of the substrate W located inside the peripheral edge portion 22.
  • the semiconductor device is formed on the main portion 23.
  • FIG. 3 for convenience, the boundary between the peripheral portion 22 and the main portion 23 is shown by a broken line.
  • the substrate processing device 1 can process a substrate W having a different shape.
  • a substrate W having a different shape In the following, three types of substrates W having different shapes will be illustrated. For convenience, the three types of substrates W having different shapes are referred to as A-type substrate WA, B-type substrate WB, and C-type substrate WC, respectively.
  • FIG. 4A is a cross-sectional view of the A-type substrate WA.
  • the A-type substrate WA is a substrate W that includes a recess 24 formed by the main portion 23 being recessed from the peripheral portion 22 and does not include a protective plate made of glass.
  • the recess 24 is formed by, for example, a grinding process (grinding process).
  • the A-type substrate WA may be composed of only the substrate main body 21.
  • the A-type substrate WA may include at least one of a resin film, a resin tape, a resin sheet, and a resin film in addition to the substrate body 21.
  • FIG. 4B is a cross-sectional view of the B-type substrate WB.
  • the B-type substrate WB is a substrate W including a recess 24 and a protective plate 25 made of glass.
  • the B-type substrate WB includes a substrate body 21 and a protective plate 25.
  • the protective plate 25 is attached to, for example, the substrate main body 21.
  • the B-type substrate WB may further include at least one of a resin film, a resin tape, a resin sheet, and a resin film.
  • FIG. 4C is a cross-sectional view of the C-type substrate WC.
  • the C-type substrate WC is a substrate W that does not include the recess 24.
  • the C-type substrate WC is flat over the peripheral portion 22 and the main portion 23.
  • the C-type substrate WC may be composed of only the substrate main body 21.
  • the C-type substrate WC may include at least one of a resin film, a resin tape, a resin sheet, a resin film, and a protective plate 25 in addition to the substrate body 21.
  • the main portion 23 of the A-type substrate WA is thinner than the main portion 23 of the B-type substrate WB.
  • the main portion 23 of the A-type substrate WA is thinner than the main portion 23 of the C-type substrate WC.
  • the A-type substrate WA has lower rigidity than the B-type substrate WB and the C-type substrate WC.
  • the A-type substrate WA is more flexible than the B-type substrate WB and the C-type substrate WC.
  • the main portion 23 of the A-type substrate WA has a thickness TA1.
  • the main portion 23 of the B-type substrate WB has a thickness TB1.
  • the main portion 23 of the C-type substrate WC has a thickness TC1.
  • the thickness TA1 is smaller than the thickness TB1.
  • the thickness TA1 is smaller than the thickness TC1.
  • the thickness TA1 is, for example, 10 [ ⁇ m] or more and 200 [ ⁇ m] or less.
  • the thickness TB1 is, for example, 800 [ ⁇ m] or more and 1200 [ ⁇ m] or less.
  • the thickness TC1 is, for example, 600 [ ⁇ m] or more and 1000 [ ⁇ m] or less.
  • the peripheral edge 22 of the A-type substrate WA has a thickness TA2.
  • the peripheral edge portion 22 of the B-type substrate WB has a thickness TB2.
  • the peripheral edge portion 22 of the C-type substrate WC has a thickness TC2.
  • the thickness TA2 is smaller than the thickness TB2.
  • the thickness TA2 is, for example, the same as the thickness TC2.
  • the thickness TA2 is, for example, 600 [ ⁇ m] or more and 1000 [ ⁇ m] or less.
  • the thickness TB2 is, for example, 1400 [ ⁇ m] or more and 2200 [ ⁇ m] or less.
  • the thickness TC2 is, for example, 600 [ ⁇ m] or more and 1000 [ ⁇ m] or less.
  • the A-type substrate WA and the B-type substrate WB are examples of the first substrate in the present invention.
  • the C-type substrate WC is an example of the second substrate in the present invention.
  • first substrate W1 the A-type substrate WA and the B-type substrate WB are appropriately collectively referred to as "first substrate W1".
  • the C-type substrate WC is appropriately referred to as a "second substrate W2".
  • the A-type substrate WA is an example of a thin substrate in the present invention.
  • the B-type substrate WB and the C-type substrate WC are examples of thick substrates in the present invention.
  • the A-type substrate WA is appropriately referred to as "thin substrate Wp".
  • the B-type substrate WB and the C-type substrate WC are appropriately referred to as "thick substrate Wq”.
  • FIG. 5 is a diagram schematically showing the configuration of the processing unit 14.
  • the processing unit 14 includes a substrate holding unit 31, a rotation driving unit 35, a processing liquid supply unit 41, and a liquid recovery unit 50.
  • the substrate holding portion 31 holds one substrate W.
  • the substrate holding portion 31 holds the substrate W in a horizontal posture.
  • the rotation drive unit 35 rotates the substrate holding unit 31.
  • the processing liquid supply unit 41 supplies the processing liquid to the substrate W held by the substrate holding unit 31.
  • the liquid recovery unit 50 collects the processing liquid scattered from the substrate W.
  • the substrate holding portion 31 includes a plate 32.
  • the plate 32 has a substantially disk shape.
  • the plate 32 has an upper surface 32a.
  • the upper surface 32a is substantially horizontal.
  • the upper surface 32a is substantially flat.
  • the rotation drive unit 35 is connected to the lower part of the plate 32.
  • the rotation drive unit 35 rotates the plate 32 around the rotation axis A.
  • the axis of rotation A is parallel to the vertical direction.
  • the rotation axis A passes through the center of the plate 32.
  • the rotary drive unit 35 includes a rotary shaft 35a.
  • the rotating shaft 35a extends in the vertical direction.
  • the rotary shaft 35a is arranged on the rotary axis A.
  • the rotary shaft 35a is connected to the lower part of the plate 32.
  • the rotary drive unit 35 further includes a motor (not shown).
  • the motor is connected to the rotating shaft 35a.
  • the motor rotates the rotary shaft 35a around the rotation axis A.
  • the substrate holding portion 31 further includes a plurality of edge contact pins 33.
  • the edge contact pin 33 is also called a mechanical chuck.
  • the edge contact pin 33 is attached to the plate 32.
  • the edge contact pin 33 projects upward from the upper surface 32a of the plate 32.
  • Each edge contact pin 33 may be rotatable with respect to the plate 32.
  • Each edge contact pin 33 may have a movable portion that is movable relative to the plate 32.
  • Each edge contact pin 33 comes into contact with the edge of the substrate W. When the edge contact pin 33 comes into contact with the edge of the substrate W, each edge contact pin 33 may further push the edge of the substrate W toward the center of the substrate W.
  • the edge contact pin 33 holds the substrate W at a position higher than the upper surface 32a of the plate 32.
  • the edge contact pin 33 When the edge contact pin 33 holds the substrate W, the center of the substrate W is located on the rotation axis A.
  • the rotation drive unit 35 rotates the plate 32, the edge contact pin 33 rotates integrally with the plate 32.
  • the rotation driving unit 35 rotates the substrate holding portion 31, the edge contact pin 33 does not slip with respect to the substrate W in contact with the edge contact pin 33.
  • the rotation drive unit 35 rotates the substrate holding unit 31, the substrate W held by the substrate holding unit 31 also rotates integrally with the plate 32.
  • the processing liquid supply unit 41 includes a first nozzle 42.
  • the first nozzle 42 discharges the processing liquid.
  • the first nozzle 42 discharges the processing liquid downward.
  • the first nozzle 42 is arranged at a position higher than the substrate W held by the substrate holding portion 31.
  • the first nozzle 42 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding portion 31.
  • the processing unit 14 includes a nozzle moving mechanism (not shown).
  • the nozzle moving mechanism moves the first nozzle 42 to the processing position and the retracted position.
  • FIG. 4 shows the first nozzle 42 at the processing position with a broken line.
  • the first nozzle 42 in the retracted position is shown by a solid line.
  • the processing position is a position above the substrate W held by the substrate holding portion 31.
  • the first nozzle 42 overlaps the substrate W held by the substrate holding portion 31 in a plan view.
  • the first nozzle 42 is in the retracted position, the first nozzle 42 does not overlap with the substrate W held by the substrate holding portion 31 in a plan view.
  • the processing liquid supply unit 41 includes a first pipe 43.
  • the first pipe 43 supplies the processing liquid to the first nozzle 42.
  • the first pipe 43 has a first end and a second end. The first end of the first pipe 43 is connected to the processing liquid supply source 44. The second end of the first pipe 43 is connected to the first nozzle 42.
  • the processing liquid supply unit 41 includes a second nozzle 45.
  • the second nozzle 45 discharges the processing liquid.
  • the second nozzle 45 discharges the processing liquid upward.
  • the second nozzle 45 is arranged at a position lower than the substrate W held by the substrate holding portion 31.
  • the second nozzle 45 supplies the processing liquid to the lower surface of the substrate W held by the substrate holding portion 31.
  • the second nozzle 45 is formed on the plate 32.
  • the second nozzle 45 is formed on the upper surface 32a of the plate 32.
  • the second nozzle 45 is arranged at the center of the upper surface 32a of the plate 32.
  • the second nozzle 45 is arranged on the rotation axis A.
  • the second nozzle 45 overlaps with the substrate W held by the substrate holding portion 31 in a plan view.
  • the processing liquid supply unit 41 includes a second pipe 46.
  • the second pipe 46 supplies the processing liquid to the second nozzle 45.
  • a part of the second pipe 46 may be formed inside the plate 32.
  • a part of the second pipe 46 may be arranged inside the rotating shaft 35a.
  • the second pipe 46 has a first end and a second end. The first end of the second pipe 46 is connected to the processing liquid supply source 47. The second end of the second pipe 46 is connected to the second nozzle 45.
  • the processing liquid discharged by the second nozzle 45 may be the same as the processing liquid discharged by the first nozzle 42.
  • the processing liquid discharged by the second nozzle 45 may be different from the processing liquid discharged by the first nozzle 42.
  • the processing unit 14 includes a flow rate adjusting unit 48.
  • the flow rate adjusting unit 48 adjusts the flow rate of the processing liquid supplied to the substrate W by the processing liquid supply unit 41.
  • the flow rate adjusting unit 48 includes a first flow rate adjusting unit 48a and a second flow rate adjusting unit 48b.
  • the first flow rate adjusting unit 48a is provided in the first pipe 43.
  • the first flow rate adjusting unit 48a adjusts the flow rate of the processing liquid discharged by the first nozzle 42.
  • the second flow rate adjusting unit 48b is provided in the second pipe 46.
  • the second flow rate adjusting unit 48b adjusts the flow rate of the processing liquid discharged by the second nozzle 45.
  • the first flow rate adjusting unit 48a and the second flow rate adjusting unit 48b each include, for example, a flow rate adjusting valve.
  • the first flow rate adjusting unit 48a and the second flow rate adjusting unit 48b each include, for example, an on-off valve.
  • the liquid recovery unit 50 includes a first guard 51 and a second guard 52.
  • the first guard 51 and the second guard 52 each receive the treatment liquid.
  • the first guard 51 and the second guard 52 are arranged so as to surround the side of the substrate holding portion 31, respectively.
  • the first guard 51 has a substantially cylindrical shape centered on the rotation axis A (generatrix).
  • the second guard 52 also has a substantially cylindrical shape centered on the rotation axis A.
  • the second guard 52 is arranged outside the first guard 51.
  • the first guard 51 is arranged inside the second guard 52.
  • the first guard 51 is fixedly provided.
  • the second guard 52 is provided so as to be movable in the vertical direction.
  • the second guard 52 can move in the vertical direction with respect to the substrate holding portion 31.
  • the first guard 51 includes a vertical portion 53.
  • the vertical portion 53 is an annular peripheral wall centered on the rotation axis A.
  • the vertical portion 53 extends in the vertical direction.
  • the inner diameter of the vertical portion 53 is substantially constant over the vertical direction.
  • the first guard 51 includes an inclined portion 54.
  • the inclined portion 54 is an annular peripheral wall centered on the rotation axis A.
  • the inclined portion 54 is connected to the vertical portion 53.
  • the inclined portion 54 extends upward and inward from the vertical portion 53.
  • the inner diameter of the inclined portion 54 decreases upward.
  • the inclined portion 54 has an upper edge 54A.
  • the upper edge 54A has a ring shape centered on the rotation axis A.
  • the upper edge 54A is arranged at a position lower than the upper surface 32a of the plate 32.
  • the upper edge 54A is arranged at a position close to the plate 32.
  • the second guard 52 includes a vertical portion 55.
  • the vertical portion 55 is an annular peripheral wall centered on the rotation axis A.
  • the vertical portion 55 is arranged outside the vertical portion 53.
  • the vertical portion 55 extends in the vertical direction.
  • the inner diameter of the vertical portion 55 is substantially constant over the vertical direction.
  • the inner diameter of the vertical portion 55 is larger than the inner diameter of the vertical portion 53.
  • the second guard 52 includes an inclined portion 56.
  • the inclined portion 56 is an annular peripheral wall centered on the rotation axis A.
  • the inclined portion 56 is arranged above the inclined portion 54.
  • the inclined portion 56 is connected to the vertical portion 55.
  • the inclined portion 56 extends upward and inward from the vertical portion 55.
  • the inner diameter of the inclined portion 56 decreases upward.
  • the inclined portion 56 has an upper edge 56A.
  • the upper edge 56A is arranged above the upper edge 54A.
  • the upper edge 56A has a ring shape centered on the rotation axis A.
  • the inner side of the upper edge 56A is open.
  • the first guard 51 and the second guard 52 are examples of guards in the present invention, respectively.
  • the liquid recovery unit 50 includes a recovery space 57.
  • the recovery space 57 is partitioned by a first guard 51 and a second guard 52.
  • the recovery space 57 is a space formed between the first guard 51 and the second guard 52.
  • the recovery space 57 includes a space above the inclined portion 54 and below the inclined portion 56.
  • the recovery space 57 includes a space outside the vertical portion 53 and inside the vertical portion 55.
  • the recovery space 57 has a ring shape centered on the rotation axis A.
  • the recovery space 57 is arranged so as to surround the side of the substrate W held by the substrate holding portion 31.
  • the recovery space 57 is arranged outside the substrate W held by the substrate holding portion 31.
  • the liquid recovery unit 50 includes a liquid introduction port 58.
  • the liquid introduction port 58 is shown by a broken line.
  • the liquid introduction port 58 is an opening for the treatment liquid to enter the recovery space 57.
  • the liquid introduction port 58 is opened with respect to the substrate W held by the substrate holding portion 31. In other words, the liquid introduction port 58 opens the recovery space 57 with respect to the substrate W.
  • the processing liquid scattered from the substrate W passes through the liquid introduction port 58 and enters the recovery space 57.
  • the liquid introduction port 58 is partitioned by a first guard 51 and a second guard 52. More specifically, the liquid inlet 58 is partitioned by an upper edge 54A of the inclined portion 54 and an upper edge 56A of the inclined portion 56. The liquid introduction port 58 is arranged above the upper edge 54A of the inclined portion 54 and below the upper edge 56A of the inclined portion 56. The liquid introduction port 58 is a curved surface connecting the upper edge 54A of the inclined portion 54 and the upper edge 56A of the inclined portion 56. The liquid introduction port 58 has a ring shape centered on the rotation axis A. The liquid introduction port 58 is arranged so as to surround the side of the substrate W held by the substrate holding portion 31. The liquid introduction port 58 is arranged outside the substrate W held by the substrate holding portion 31.
  • the liquid introduction port 58 has an upper end 58T and a lower end 58B.
  • the second guard 52 defines the upper end 58T.
  • the upper edge 56A of the second guard 52 corresponds to the upper end 58T.
  • the first guard 51 defines the lower end 58B.
  • the upper edge 54A of the first guard 51 corresponds to the lower end 58B.
  • the liquid recovery unit 50 includes a cup 59.
  • the cup 59 is arranged below the first guard 51 and the second guard 52.
  • the treatment liquid received by the first guard 51 and the second guard 52 flows down into the cup 59.
  • the cup 59 has a groove 59a.
  • the groove 59a is open upward.
  • the groove portions 59a are connected in an annular shape.
  • the vertical portion 53 of the first guard 51 is inserted into the groove portion 59a.
  • the vertical portion 55 of the second guard 52 is also inserted into the groove portion 59a.
  • the processing unit 14 includes a discharge pipe (not shown).
  • the discharge pipe is connected to the cup 59. More specifically, the discharge pipe is connected to the bottom of the groove 59a.
  • the discharge pipe discharges the treatment liquid in the cup 59.
  • the processing unit 14 includes a guard drive unit 60.
  • the guard drive unit 60 includes a guard drive mechanism 62.
  • the guard drive mechanism 62 moves the second guard 52 in the vertical direction.
  • the guard drive unit 60 does not move the first guard 51.
  • the guard drive mechanism 62 includes, for example, an electric motor.
  • the guard drive unit 60 allows the upper edge 56A (that is, the upper end 58T) to move from a position lower than the upper surface 32a of the plate 32 to a position higher than the substrate W held by the substrate holding unit 31.
  • the processing unit 14 includes a shape detection unit 67.
  • the shape detection unit 67 detects the shape of the substrate W mounted on the substrate holding unit 31.
  • the shape detection unit 67 is, for example, an image sensor that captures an image of the substrate W.
  • the image sensor is, for example, a one-dimensional image sensor or a two-dimensional image sensor.
  • the shape detection unit 67 is arranged above the substrate holding unit 31, for example.
  • the control unit 18 is further communicably connected to the shape detection unit 67, the rotation drive unit 35, the flow rate adjustment unit 48, and the guard drive unit 60.
  • the control unit 18 acquires the detection result of the shape detection unit 67.
  • the control unit 18 controls the rotation drive unit 35, the flow rate adjusting units 48 (48a, 48b), and the guard drive unit 60 (guard drive mechanism 62).
  • the setting unit 18b further considers the information acquired from the shape detection unit 67 when setting the operating conditions.
  • the drive circuit 18c outputs a drive command to the rotation drive unit 35, the flow rate adjusting units 48 (48a, 48b), and the guard drive unit 60 (guard drive mechanism 62).
  • control unit 18 changes the height position of the upper end 58T of the liquid introduction port 58 according to the thickness of the main portion 23 of the substrate W.
  • FIG. 6 is a flowchart showing a procedure for controlling the control unit 18 and operating the processing unit 14.
  • Step S1 The bar code reader 4 reads the bar code attached to the carrier C.
  • the bar code reader 4 outputs the detection result of the bar code reader 4 to the control unit 18.
  • the shape detection unit 13 detects the shape of the substrate W mounted on the mounting unit 12.
  • the shape detection unit 67 detects the shape of the substrate W held by the substrate holding unit 31.
  • the shape detection units 13 and 67 output the detection results of the shape detection units 13 and 67 to the control unit 18.
  • Step S2 The control unit 18 acquires the detection results of the barcode reader 4 and the shape detection units 13 and 67.
  • the control unit 18 determines the shape of the substrate W held by the substrate holding unit 31 based on the detection results of the barcode reader 4 and the shape detecting units 13 and 67.
  • the setting unit 18b specifies the thickness of the main portion 23 of the substrate W.
  • the control unit 18 manages the position of the substrate W and the shape of the substrate W in association with each other even after the substrate W is carried out from the carrier C. Specifically, the control unit 18 manages the shape of the substrate W to be conveyed by the transfer mechanisms 5 and 15 at each time. The control unit 18 manages the shape of the substrate W mounted on the mounting unit 12 at each time. The control unit 18 manages the shape of the substrate W held by the substrate holding unit 31 at each time. In order for the control unit 18 to manage the position of the substrate W and the shape of the substrate W, the control unit 18 may appropriately refer to the detection results of the shape detection units 13 and 67 and the detection results of the presence / absence detection units 6 and 16. ..
  • Step S3 The control unit 18 (specifically, the setting unit 18b) determines the height position of the upper end 58T of the liquid introduction port 58 according to the shape of the substrate W held by the substrate holding unit 31.
  • the height position of the upper end 58T of the liquid introduction port 58 is abbreviated as “upper height position HT”.
  • the storage unit 18a stores the first upper set value VTa and the second upper set value VTb in advance.
  • the first upper set value VTa and the second upper set value VTb are set values related to the upper height position HT, respectively.
  • the setting unit 18b switches between the first upper set value VTa and the second upper set value VTb according to the shape of the substrate W held by the substrate holding unit 31.
  • the setting unit 18b selects either one of the first upper set value VTa and the second upper set value VTb according to the shape of the substrate W held by the substrate holding unit 31.
  • the first upper set value VTa and the second upper set value VTb each define the upper height position HT.
  • the upper height position HT defined by the first upper set value VTa is referred to as the first upper height position HT.
  • the upper height position HT defined by the second upper set value VTb is referred to as the second upper height position HTb.
  • the first upper height position HTa is higher than the second upper height position HTb. Therefore, the selection of the first upper set value VTa by the setting unit 18b corresponds to the control unit 18 determining the target of the upper height position HT at the first upper height position HT.
  • the selection of the second upper set value VTb by the setting unit 18b corresponds to the control unit 18 determining the target of the upper height position HT to the second upper height position HTb.
  • the first upper set value VTa and the second upper set value VTb are examples of the set values in the present invention.
  • the control unit 18 In order to change the upper height position HT, the control unit 18 considers the shape of the substrate W held by the substrate holding unit 31.
  • the shape of the substrate W considered by the control unit 18 is, for example, the thickness of the main portion 23 of the substrate W held by the substrate holding portion 31.
  • the control unit 18 determines the first upper set value VTa. For example, when the main portion 23 of the substrate W held by the substrate holding portion 31 has a second thickness larger than the first thickness, the control unit 18 determines the second upper set value VTb.
  • the control unit 18 determines the first upper set value VTa.
  • the control unit 18 determines the second upper set value VTb.
  • the reference value RV is stored in advance in the storage unit 18a.
  • the setting unit 18b compares the thickness of the main portion 23 of the substrate W held by the substrate holding portion 31 with the reference value RV. As a result, the setting unit 18a selects either one of the first upper set value VTa and the second upper set value VTb.
  • the reference value RV is preferably larger than the thickness TA1 of the main portion 23 of the A-type substrate WA and smaller than the thickness TB1 of the main portion 23 of the B-type substrate WB and the thickness TC1 of the main portion 23 of the C-type substrate WC.
  • the reference value RV is preferably larger than, for example, 200 [ ⁇ m] and smaller than 600 [ ⁇ m]. According to this, when the substrate W is the A-type substrate WA, the control unit 18 can determine the first upper set value VTa. In other words, when the substrate W is a thin substrate Wp, the control unit 18 can determine the first upper set value VTa.
  • the control unit 18 can determine the second upper set value VTb. In other words, when the substrate W is the thick substrate wq, the control unit 18 can determine the second upper set value VTb.
  • the shape of the substrate W considered by the control unit 18 is, for example, whether the substrate W held by the substrate holding unit 31 belongs to the thin substrate Wp or the thick substrate wq.
  • the control unit 18 selects the first upper set value VTa.
  • the control unit 18 selects the second upper set value VTb.
  • the shape of the substrate W considered by the control unit 18 is, for example, whether the substrate W held by the substrate holding unit 31 belongs to the A-type substrate WA, the B-type substrate WB, or the C-type substrate WC.
  • the control unit 18 selects the first upper set value VTa.
  • the control unit 18 selects the second upper set value VTb.
  • Step S4 The control unit 18 controls the processing unit 14.
  • the control unit 18 controls the guard drive unit 60 based on the determined upper height position HT.
  • the drive circuit 18c drives the guard drive unit 60 based on the switched set value. For example, when the setting unit 18b selects the first upper set value VTa, the drive circuit 18c issues a drive command to the guard drive mechanism 62 based on the first upper set value VTa. For example, when the setting unit 18b selects the second upper set value VTb, the drive circuit 18c issues a drive command to the guard drive mechanism 62 based on the second upper set value VTb.
  • Step S5 The processing unit 14 processes the substrate W according to the control by the control unit 18. Specifically, the substrate holding portion 31 holds the substrate W.
  • the guard drive unit 60 moves the second guard 52 in the vertical direction. As a result, the upper end 58T of the liquid introduction port 58 is arranged at the determined upper height position HT.
  • the control unit 18 changes the upper height position HT according to the shape of the substrate W held by the substrate holding unit 31. For example, the control unit 18 changes the upper height position HT according to the thickness of the main portion 23 of the substrate W held by the substrate holding unit 31.
  • control unit 18 changes the upper height position HT depending on whether the substrate W held by the substrate holding unit 31 is a thin substrate Wp or a thick substrate wq. For example, the control unit 18 changes the upper height position HT depending on which of the A-type substrate WA, the B-type substrate WB, and the C-type substrate WC is the substrate W held by the substrate holding unit 31.
  • FIG. 7 (a) and 7 (b) are diagrams schematically showing the processing unit 14.
  • the A-type substrate WA is held by the substrate holding portion 31.
  • the B-type substrate WB or the C-type substrate WC is held by the substrate holding portion 31.
  • the upper end 58T of the liquid introduction port 58 is defined by the first upper height position HTa (that is, the first upper set value VTa). It is arranged at the upper height position HT).
  • the upper end 58T of the liquid introduction port 58 is arranged at the first upper height position HTa.
  • the upper end 58T of the liquid introduction port 58 is the second upper height position HTb (that is, the second upper set value). It is arranged at the upper height position HT) defined by VTb.
  • the upper end 58T of the liquid introduction port 58 is arranged at the second upper height position HTb.
  • the second upper height position HTb is lower than the first upper height position HTa.
  • the second guard 52 moves in the vertical direction according to the shape of the substrate W held by the substrate holding portion 31.
  • the upper height position HT changes due to the movement of the second guard 52.
  • the rotation drive unit 35 rotates the substrate holding unit 31, and the flow rate adjusting unit 48 opens.
  • the processing liquid supply unit 41 supplies the processing liquid to the substrate W held by the substrate holding unit 31 while the substrate W held by the substrate holding unit 31 rotates.
  • at least one of the first nozzle 42 and the second nozzle 45 discharges the processing liquid onto the substrate W.
  • the processing liquid scatters outward from the substrate W held by the substrate holding portion 31.
  • the scattered treatment liquid is recovered by the liquid recovery unit 50.
  • the treatment liquid passes through the liquid introduction port 58 and enters the recovery space 57.
  • the first guard 51 and the second guard 52 receive the treatment liquid that has entered the recovery space 57, and guide the treatment liquid to the cup 59.
  • the B-type substrate WB and the C-type substrate WC have higher rigidity than the A-type substrate WA.
  • the B-type substrate WB and the C-type substrate WC are less likely to bend than the A-type substrate WA.
  • the B-type substrate WB and the C-type substrate WC are substantially horizontal. Therefore, the treatment liquid tends to be scattered horizontally from the B-type substrate WB and the C-type substrate WC. That is, the treatment liquid is unlikely to scatter upward from the B-type substrate WB and the C-type substrate WC.
  • the second upper height position HTb is lower than the first upper height position HTa.
  • the upper end 58T of the liquid introduction port 58 is not unnecessarily high with respect to the range in which the treatment liquid is scattered. Therefore, it is difficult for the treatment liquid once introduced into the recovery space 57 to return to the outside of the recovery space 57 through the liquid introduction port 58. More specifically, it is difficult for the treatment liquid to return from the recovery space 57 to the substrate W held by the substrate holding portion 31 through the liquid introduction port 58.
  • the processing liquid scattered from the B-type substrate WB and the C-type substrate WC is unlikely to adhere to the B-type substrate WB and the C-type substrate WC again.
  • the liquid recovery unit 50 can suitably recover the processing liquid. Therefore, the processing unit 14 can process the B-type substrate WB and the C-type substrate WC with good quality.
  • the A-type substrate WA bends more than the B-type substrate WB and the C-type substrate WC. Specifically, the A-type substrate WA is curved downwardly. The peripheral edge portion 22 of the A-type substrate WA is inclined outward and upward. Therefore, the treatment liquid tends to scatter upward from the A-type substrate WA. The treatment liquid tends to scatter from the A-type substrate WA to a relatively high position.
  • the first upper height position HTa is higher than the second upper height position HTb. Therefore, even when the treatment liquid is scattered at a relatively high position from the A-type substrate WA, the liquid introduction port 58 can accurately introduce the treatment liquid into the recovery space 57. In this way, even when the A-type substrate WA is held by the substrate holding unit 31, the liquid recovery unit 50 can suitably recover the processing liquid. Therefore, the processing unit 14 can process the A-type substrate WA with good quality.
  • the processing liquid supply unit 41 supplies the processing liquid to the substrate W held by the substrate holding unit 31.
  • the processing liquid is scattered from the substrate W held by the substrate holding portion 31.
  • the liquid recovery unit 50 collects the processing liquid scattered from the substrate W.
  • the liquid recovery unit 50 includes a first guard 51 and a second guard 52.
  • the first guard 51 and the second guard 52 are arranged so as to surround the side of the substrate holding portion 31.
  • the liquid recovery unit 50 further includes a liquid introduction port 58.
  • the liquid introduction port 58 is partitioned by a first guard 51 and a second guard 52.
  • the liquid introduction port 58 is opened with respect to the substrate W held by the substrate holding portion 31.
  • the liquid introduction port 58 introduces the processing liquid scattered from the substrate into the liquid recovery unit 50.
  • the guard drive unit 60 moves the second guard 52 in the vertical direction. By moving the second guard 52 in the vertical direction, the upper height position HT can be changed.
  • the control unit 18 controls the guard drive unit 60 according to the shape of the substrate W held by the substrate holding unit 31. As a result, the control unit 18 changes the upper height position HT. Therefore, the liquid introduction port 58 can be adjusted to an appropriate height position according to the shape of the substrate W held by the substrate holding portion 31. Therefore, regardless of the shape of the substrate W held by the substrate holding unit 31, the liquid collecting unit 50 can suitably recover the processing liquid scattered from the substrate W. Therefore, the processing unit 14 can appropriately process the substrate W.
  • the substrate processing device 1 can appropriately process the substrate W.
  • the control unit 18 includes a storage unit 18a and a setting unit 18b.
  • the storage unit 18a stores the first upper set value VTa and the second upper set value VTb.
  • the setting unit 18b switches between the first upper set value VTa and the second upper set value VTb according to the shape of the substrate W held by the substrate holding unit 31. Therefore, the control unit 18 can suitably determine the upper height position HT according to the shape of the substrate W held by the substrate holding unit 31.
  • the control unit 18 can suitably change the upper height position HT according to the shape of the substrate W held by the substrate holding unit 31.
  • the processing unit 14 processes the substrate W (step S5).
  • the method for processing the substrate W by the processing unit 14 includes three steps. In the first step, the substrate W is held in a horizontal posture by the substrate holding portion 31. In the second step, the upper height position HT is changed by moving the second guard 52 in the vertical direction according to the shape of the substrate W held by the substrate holding portion 31. In the third step, the substrate holding portion 31 is rotated to supply the processing liquid to the substrate W held by the substrate holding portion 31, and the processing liquid passing through the liquid introduction port 58 is supplied to the first guard 51 and the second guard 51 and the second. Received by guard 52. Therefore, the processing unit 14 can appropriately process the substrate W.
  • the control unit 18 changes the upper height position HT according to the thickness of the main portion 23 of the substrate W. Therefore, regardless of the thickness of the main portion 23 of the substrate W, the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W. Therefore, the processing unit 14 can appropriately process the substrate W regardless of the thickness of the main portion 23 of the substrate W.
  • the upper end 58T of the liquid introduction port 58 is arranged at the first upper height position HTa.
  • the upper end 58T of the liquid introduction port 58 is the second upper height position HTb lower than the first upper height position HTa. Is placed in. In this way, when the substrate W having the first thickness of the main portion 23 is held by the substrate holding portion 31, the upper end 58T of the liquid introduction port 58 is arranged at a relatively high position. Therefore, the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W.
  • the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W.
  • the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W regardless of whether the substrate W is relatively thin or the substrate W is relatively thick. Therefore, the processing unit 14 can appropriately process both the substrate W in which the main portion 23 has the first thickness and the substrate W in which the main portion 23 has the second thickness.
  • the processing unit 14 includes a shape detection unit 67.
  • the shape detection unit 67 detects the shape of the substrate W.
  • the control unit 18 acquires the detection result of the shape detection unit 67.
  • the control unit 18 determines the shape of the substrate W held by the substrate holding unit 31 based on the detection result of the shape detecting unit 67. Therefore, the control unit 18 can suitably specify the shape of the substrate W held by the substrate holding unit 31. For example, the control unit 18 can suitably specify the thickness of the main portion 23 of the substrate W.
  • the board processing device 1 includes a barcode reader 4.
  • the bar code reader 4 reads the bar code attached to the carrier C.
  • the control unit 18 acquires the detection result of the barcode reader 4.
  • the control unit 18 determines the shape of the substrate W based on the detection result of the barcode reader 4. Therefore, the control unit 18 can preferably specify the shape of the substrate W.
  • the substrate processing device 1 includes a shape detection unit 13.
  • the shape detection unit 13 detects the shape of the substrate W.
  • the control unit 18 acquires the detection result of the shape detection unit 13.
  • the control unit 18 determines the shape of the substrate W based on the detection result of the shape detection unit 13. Therefore, the control unit 18 can preferably specify the shape of the substrate W.
  • the substrate processing apparatus 1 of the second embodiment has substantially the same configuration as the substrate processing apparatus 1 of the first embodiment.
  • the processing unit 14 of the second embodiment executes an operation different from that of the processing unit 14 of the first embodiment.
  • the operation of the processing unit 14 of the second embodiment will be illustrated.
  • control unit 18 changes the upper height position HT depending on whether or not the substrate W has the recess 24. That is, the control unit 18 changes the upper height position HT depending on whether the substrate W is the first substrate W1 or the second substrate W2.
  • FIG. 8 is a flowchart showing a procedure for controlling the control unit 18 and operating the processing unit 14.
  • Step S11 is substantially the same as step S1 of the first embodiment. That is, the barcode reader 4 reads the barcode attached to the carrier C.
  • the shape detection units 13 and 67 each detect the shape of the substrate W.
  • the barcode reader 4 and the shape detection units 13 and 67 output the detection results of the barcode reader 4 and the shape detection units 13 and 67 to the control unit 18.
  • Step S12 The control unit 18 acquires the detection results of the barcode reader 4 and the shape detection units 13 and 67.
  • the control unit 18 determines the shape of the substrate W held by the substrate holding unit 31 based on the detection results of the barcode reader 4 and the shape detecting units 13 and 67.
  • the setting unit 18b specifies whether or not the substrate W has the recess 24.
  • the setting unit 18b specifies whether the substrate W is the first substrate W1 or the second substrate W2.
  • Step S13 The control unit 18 (specifically, the setting unit 18b) determines the upper height position HT according to the shape of the substrate W held by the substrate holding unit 31.
  • the storage unit 18a stores the first upper set value VTc and the second upper set value VTd in advance.
  • the first upper set value VTc and the second upper set value VTd are set values related to the upper height position HT, respectively.
  • the setting unit 18b switches between the first upper set value VTc and the second upper set value VTd according to the shape of the substrate W held by the substrate holding unit 31.
  • the setting unit 18b selects either one of the first upper set value VTc and the second upper set value VTd according to the shape of the substrate W held by the substrate holding unit 31.
  • the first upper set value VTc and the second upper set value VTd each define the upper height position HT.
  • the upper height position HT defined by the first upper set value VTc is referred to as the first upper height position HTc.
  • the upper height position HT defined by the second upper set value VTd is referred to as the second upper height position HTd.
  • the first upper height position HTc is higher than the second upper height position HTd. Therefore, the selection of the first upper set value VTc by the setting unit 18b corresponds to the control unit 18 determining the target of the upper height position HT to the first upper height position HTc.
  • the selection of the second upper set value VTd by the setting unit 18b corresponds to the control unit 18 determining the target of the upper height position HT to the second upper height position HTd.
  • the first upper set value VTc and the second upper set value VTd are examples of the set values in the present invention.
  • the control unit 18 In order to change the upper height position HT, the control unit 18 considers the shape of the substrate W held by the substrate holding unit 31.
  • the shape of the substrate W considered by the control unit 18 is, for example, whether or not the substrate W held by the substrate holding unit 31 has a recess 24.
  • the control unit 18 determines the first upper set value VTc.
  • the control unit 18 determines the second upper set value VTd.
  • the shape of the substrate W considered by the control unit 18 is, for example, whether the substrate W held by the substrate holding unit 31 belongs to the first substrate W1 or the second substrate W2.
  • the control unit 18 determines the first upper set value VTc.
  • the control unit 18 determines the second upper set value VTd.
  • the shape of the substrate W considered by the control unit 18 is, for example, whether the substrate W held by the substrate holding unit 31 belongs to the A-type substrate WA, the B-type substrate WB, or the C-type substrate WC.
  • the control unit 18 determines the first upper set value VTc.
  • the control unit 18 determines the second upper set value VTd.
  • Step S14 The control unit 18 controls the processing unit 14.
  • the control unit 18 controls the guard drive unit 60 based on the determined upper height position HT.
  • the drive circuit 18c drives the guard drive unit 60 based on the switched set value. For example, when the setting unit 18b selects the first upper set value VTc, the drive circuit 18c issues a drive command to the guard drive mechanism 62 based on the first upper set value VTc. For example, when the setting unit 18b selects the second upper set value VTd, the drive circuit 18c issues a drive command to the guard drive mechanism 62 based on the second upper set value VTd.
  • Step S15 The processing unit 14 processes the substrate W according to the control by the control unit 18. Specifically, the substrate holding portion 31 holds the substrate W.
  • the guard drive unit 60 moves the second guard 52 in the vertical direction. As a result, the upper end 58T of the liquid introduction port 58 is arranged at the determined upper height position HT.
  • the control unit 18 changes the upper height position HT according to the shape of the substrate W held by the substrate holding unit 31. For example, the control unit 18 changes the upper height position HT depending on whether or not the substrate W held by the substrate holding unit 31 has the recess 24.
  • control unit 18 changes the upper height position HT depending on whether the substrate W held by the substrate holding unit 31 is the first substrate W1 or the second substrate W2. For example, the control unit 18 changes the upper height position HT depending on which of the A-type substrate WA, the B-type substrate WB, and the C-type substrate WC is the substrate W held by the substrate holding unit 31.
  • the upper end 58T of the liquid introduction port 58 is the upper height position HTc (that is, the upper height position defined by the first upper set value VTc). HT) is adjusted.
  • the upper end 58T of the liquid introduction port 58 is adjusted to the first upper height position HTc.
  • the substrate W held by the substrate holding portion 31 is an A-type substrate WA or a B-type substrate WB, the upper end 58T of the liquid introduction port 58 is adjusted to the first upper height position HTc.
  • the upper end 58T of the liquid introduction port 58 has an upper height defined by the second upper height position HTd (that is, the second upper set value VTd). Adjusted to position HT).
  • the upper end 58T of the liquid introduction port 58 is adjusted to the second upper height position HTd.
  • the upper end 58T of the liquid introduction port 58 is adjusted to the second upper height position HTd.
  • the rotation drive unit 35 rotates the substrate holding unit 31, and the processing liquid supply unit 41 supplies the processing liquid to the substrate W held by the substrate holding unit 31.
  • the liquid recovery unit 50 collects the processing liquid scattered from the substrate W.
  • the first substrate W1 has a recess 24.
  • the second substrate W2 does not have a recess 24. Therefore, the range in which the treatment liquid scatters from the first substrate W1 may be larger than the range in which the treatment liquid scatters from the second substrate W2.
  • the range in which the treatment liquid scatters from the first substrate W1 may be higher than the range in which the treatment liquid scatters from the second substrate W2.
  • the first upper height position HTc is higher than the second upper height position HTd. Therefore, regardless of whether the substrate W held by the substrate holding portion 31 is the first substrate W or the second substrate W2, the liquid introduction port 58 accurately introduces the scattering treatment liquid from the substrate W into the recovery space 57. it can.
  • the control unit 18 controls the guard drive unit 60 according to the shape of the substrate W held by the substrate holding unit 31, so that the upper height position HT change. Therefore, the liquid introduction port 58 can be adjusted to an appropriate height position according to the shape of the substrate W held by the substrate holding portion 31. Therefore, regardless of the shape of the substrate W held by the substrate holding unit 31, the liquid collecting unit 50 can suitably recover the processing liquid scattered from the substrate W. Therefore, the processing unit 14 can appropriately process the substrate W. That is, the substrate processing device 1 can appropriately process the substrate W.
  • control unit 18 changes the upper height position HT depending on whether the substrate W held by the substrate holding unit 31 is the first substrate W1 or the second substrate W2. Therefore, regardless of whether the substrate W is the first substrate W1 or the second substrate W2, the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W. Therefore, the processing unit 14 can appropriately process both the first substrate W1 and the second substrate W2.
  • the upper end 58T of the liquid introduction port 58 is arranged at the first upper height position HTc.
  • the upper end 58T of the liquid introduction port 58 is arranged at the second upper height position HTd lower than the first upper height position HTc.
  • the liquid recovery unit 50 can suitably recover the processing liquid scattered from the first substrate W1.
  • the upper end 58T of the liquid introduction port 58 is arranged at a relatively low position. Therefore, the liquid recovery unit 50 can suitably recover the processing liquid scattered from the second substrate W2.
  • the storage unit 18a stores the first upper set value VTc and the second upper set value VTd.
  • the setting unit 18b switches between the first upper set value VTc and the second upper set value VTd according to the shape of the substrate W held by the substrate holding unit 31. Therefore, the control unit 18 can suitably change the upper height position HT according to the shape of the substrate W held by the substrate holding unit 31.
  • the processing unit 14 of the third embodiment is different from the processing unit 14 of the first embodiment. Specifically, in the processing unit 14 of the third embodiment, the height position of the lower end 58B of the liquid introduction port 58 can be adjusted. Hereinafter, the configuration and operation of the processing unit 14 of the third embodiment will be illustrated.
  • FIG. 9 is a diagram schematically showing the configuration of the processing unit 14.
  • the first guard 51 is provided so as to be movable in the vertical direction.
  • the first guard 51 can move in the vertical direction with respect to the substrate holding portion 31.
  • the guard drive unit 60 moves both the first guard 51 and the second guard 52 in the vertical direction.
  • the guard drive unit 60 includes a guard drive mechanism 61 in addition to the guard drive mechanism 62.
  • the guard drive mechanism 61 will be referred to as a first guard drive mechanism 61
  • the guard drive unit 62 will be referred to as a second guard drive mechanism 62.
  • the first guard drive mechanism 61 moves the first guard 51 in the vertical direction.
  • the second guard drive mechanism 62 moves the second guard 52 in the vertical direction.
  • the first guard drive mechanism 61 and the second guard drive mechanism 62 can operate independently of each other.
  • the first guard drive mechanism 61 includes, for example, an electric motor.
  • the second guard drive mechanism 62 includes, for example, an electric motor.
  • the first guard 51 and the second guard 52 can move in the vertical direction independently of each other. However, the upper edge 54A of the inclined portion 54 of the first guard 51 is always lower than the upper edge 56A of the inclined portion 56 of the second guard 52.
  • the control unit 18 controls the guard drive unit 60. Specifically, the control unit 18 controls the first guard drive mechanism 61 and the second guard drive mechanism 62.
  • control unit 18 has the height of the liquid introduction port 58 according to the portion of the substrate W on which the recess 24 is arranged and the portion of the substrate W to which the processing liquid is supplied. Determine the position.
  • the control unit 18 determines the height position of the lower end 58B of the liquid introduction port 58 in addition to the upper height position HT.
  • FIG. 10 is a flowchart showing a procedure for controlling the control unit 18 and operating the processing unit 14.
  • Step S21 is substantially the same as step S1 of the first embodiment. That is, the barcode reader 4 reads the barcode attached to the carrier C.
  • the shape detection units 13 and 67 each detect the shape of the substrate W.
  • the barcode reader 4 and the shape detection units 13 and 67 output the detection results of the barcode reader 4 and the shape detection units 13 and 67 to the control unit 18.
  • Step S22 The control unit 18 acquires the detection results of the barcode reader 4 and the shape detection units 13 and 67.
  • the control unit 18 determines the shape of the substrate W held by the substrate holding unit 31 based on the detection results of the barcode reader 4 and the shape detecting units 13 and 67.
  • the setting unit 18b specifies whether or not the substrate W held by the substrate holding unit 31 has a recess 24 on the upper surface of the substrate W.
  • the setting unit 18b specifies whether or not the substrate W held by the substrate holding unit 31 has a recess 24 on the lower surface of the substrate W.
  • the recess 24 formed on the upper surface of the substrate W will be particularly referred to as "upper recess 24A”.
  • the recess 24 formed on the lower surface of the substrate W is particularly referred to as a “lower recess 24B".
  • the upper recess 24A faces upward.
  • the upper recess 24A is opened upward.
  • the lower recess 24B faces downward.
  • the lower recess 24B is opened downward.
  • control unit 18 specifies whether or not the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31.
  • the control unit 18 specifies whether or not the processing liquid supply unit 41 supplies the processing liquid to the lower surface of the substrate W held by the substrate holding unit 31.
  • Step S23 The control unit 18 (specifically, the setting unit 18b) determines the upper height position HT according to the shape of the substrate W held by the substrate holding unit 31.
  • the storage unit 18a stores the first upper set value VTe, the second upper set value VTf, and the third upper set value VTg in advance.
  • the first upper set value VTe, the second upper set value VTf, and the third upper set value VTg are set values related to the upper height position HT, respectively.
  • the setting unit 18b switches between the first upper set value VTe, the second upper set value VTf, and the third upper set value VTg according to the shape of the substrate W held by the substrate holding unit 31.
  • the setting unit 18b selects any one of the first upper set value VTe, the second upper set value VTf, and the third upper set value VTg according to the shape of the substrate W held by the substrate holding unit 31.
  • the first upper set value VTe, the second upper set value VTf, and the third upper set value VTg each define the upper height position HT.
  • the upper height position HT defined by the first upper set value VTe is referred to as the first upper height position HT.
  • the upper height position HT defined by the second upper set value VTf is referred to as the second upper height position HTf.
  • the upper height position HT defined by the third upper set value VTg is referred to as the third upper height position HTg.
  • the first upper height position HTe is higher than the second upper height position HTf.
  • the second upper height position HTf is higher than the third upper height position HTg.
  • the selection of the first upper set value VTe by the setting unit 18b corresponds to the control unit 18 determining the target of the upper height position HT to the first upper height position HT.
  • the selection of the second upper set value VTf by the setting unit 18b corresponds to the control unit 18 determining the target of the upper height position HT to the second upper height position HTf.
  • the selection of the third upper set value VTg by the setting unit 18b corresponds to the control unit 18 determining the target of the upper height position HT to the third upper height position HTg.
  • the first upper set value VTe, the second upper set value VTf, and the third upper set value VTg are examples of the set values in the present invention.
  • the control unit 18 In order to change the upper height position HT, the control unit 18 considers the shape of the substrate W held by the substrate holding unit 31.
  • the shape of the substrate W considered by the control unit 18 is, for example, whether or not the substrate W held by the substrate holding unit 31 has an upper recess 24A. Further, the control unit 18 considers whether or not the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31.
  • the control unit 18 sets the first upper set value VTe. To decide.
  • the control unit 18 sets the second upper set value VTf. decide.
  • the control unit 18 determines the third upper set value VTg.
  • control unit 18 determines the height position of the lower end 58B of the liquid introduction port 58 according to the shape of the substrate W held by the substrate holding unit 31.
  • the height position of the lower end 58B of the liquid introduction port 58 is abbreviated as “lower height position HB”.
  • the storage unit 18a stores the first lower set value VBa and the second lower set value VBb in advance.
  • the first lower set value VBa and the second lower set value VBb are set values related to the lower height position HB, respectively.
  • the setting unit 18b switches between the first lower set value VBa and the second lower set value VBb according to the shape of the substrate W held by the substrate holding unit 31.
  • the setting unit 18b selects either one of the first lower set value VBa and the second lower set value VBb according to the shape of the substrate W held by the substrate holding unit 31.
  • the first lower set value VBa and the second lower set value VBb each define the lower height position HB.
  • the lower height position HB defined by the first lower set value VBa is referred to as the first lower height position HBa.
  • the lower height position HB defined by the second lower set value VBb is referred to as the second lower height position HBb.
  • the first lower height position HBa is lower than the second lower height position HBb. Therefore, the selection of the first lower set value VBa by the setting unit 18b corresponds to the control unit 18 determining the target of the lower height position HB to the first lower height position HBa.
  • the selection of the second lower set value VBb by the setting unit 18b corresponds to the control unit 18 determining the target of the lower height position HB to the second lower height position HBb.
  • the first lower set value VBa and the second lower set value VBb are examples of set values in the present invention.
  • the control unit 18 In order to change the lower height position HB, the control unit 18 considers the shape of the substrate W held by the substrate holding unit 31.
  • the shape of the substrate W considered by the control unit 18 is, for example, whether or not the substrate W held by the substrate holding unit 31 has a lower recess 24B. Further, the control unit 18 considers whether or not the processing liquid supply unit 41 supplies the processing liquid to the lower surface of the substrate W held by the substrate holding unit 31.
  • the control unit 18 sets the first lower set value VBa. To decide. When the substrate W held by the substrate holding unit 31 does not have the lower recess 24B, the control unit 18 determines the second lower set value VBb. Even when the processing liquid supply unit 41 does not supply the processing liquid to the lower surface of the substrate W, the control unit 18 determines the second lower set value VBb.
  • Step S24 The control unit 18 controls the processing unit 14.
  • the control unit 18 controls the guard drive unit 60 based on the determined upper height position HT and lower height position HB. More specifically, the control unit 18 controls the second guard drive mechanism 62 based on the determined upper height position HT.
  • the control unit 18 controls the first guard drive mechanism 61 based on the determined lower height position HB.
  • the drive circuit 18c drives the guard drive unit 60 based on the switched set value. For example, when the setting unit 18b selects the first upper set value VTe, the drive circuit 18c issues a drive command to the second guard drive mechanism 62 based on the first upper set value VTe. For example, when the setting unit 18b selects the second upper set value VTf, the drive circuit 18c issues a drive command to the second guard drive mechanism 62 based on the second upper set value VTf. For example, when the setting unit 18b selects the third upper set value VTg, the drive circuit 18c issues a drive command to the second guard drive mechanism 62 based on the third upper set value VTg.
  • the drive circuit 18c issues a drive command to the first guard drive mechanism 61 based on the first lower set value VBa.
  • the drive circuit 18c issues a drive command to the first guard drive mechanism 61 based on the second lower set value VBb.
  • Step S25 The processing unit 14 processes the substrate W according to the control by the control unit 18. Specifically, the substrate holding portion 31 holds the substrate W.
  • the second guard drive mechanism 62 moves the second guard 52 in the vertical direction.
  • the upper end 58T of the liquid introduction port 58 is arranged at any of the first upper height position HTE, the second upper height position HTf, and the third upper height position HTg.
  • the first guard drive mechanism 61 moves the first guard 51 in the vertical direction.
  • the lower end 58B of the liquid introduction port 58 is arranged at the first lower height position HBa or the second lower height position HBb.
  • the upper end 58T of the liquid introduction port 58 is arranged at the first upper height position HTe.
  • the setting unit 18b selects the second upper set value VTf
  • the upper end 58T of the liquid introduction port 58 is arranged at the second upper height position HTf.
  • the setting unit 18b selects the third upper set value VTg
  • the upper end 58T of the liquid introduction port 58 is arranged at the third upper height position HTg.
  • the lower end 58B of the liquid introduction port 58 is arranged at the first lower height position HBa.
  • the control unit 18 changes the upper height position HT and the lower height position HB according to the shape of the substrate W held by the substrate holding unit 31. For example, whether or not the substrate W held by the substrate holding portion 31 has an upper recess 24A, and whether or not the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding portion 31.
  • the control unit 18 changes the upper height position HT according to the case.
  • the control unit 18 changes the lower height position HB according to the case.
  • FIGS. 11 (a) -11 (f) is a diagram schematically showing a processing unit 14 for processing the substrate W.
  • the illustration of the first nozzle 42 is omitted. Therefore, in FIGS. 11 (c) and 11 (f), the first nozzle 42 does not discharge the processing liquid.
  • the illustration of the second nozzle 45 is omitted. Therefore, in FIGS. 11 (a) and 11 (d), the second nozzle 45 does not discharge the processing liquid.
  • the upper end 58T of the liquid introduction port 58 is on the first upper side. It is arranged at the height position HT (that is, the upper height position HT defined by the first upper set value VTe).
  • the upper end 58T of the liquid introduction port 58 is the second. It is arranged at the upper height position HTf (that is, the upper height position HT defined by the second upper set value VTf).
  • the upper end 58T of the liquid introduction port 58 has an upper height defined by the third upper height position HTg (that is, the third upper set value VTg). Position HT).
  • the lower end 58B of the liquid introduction port 58 is the first lower portion. It is arranged at the height position HBa (that is, the lower height position HB defined by the first lower set value VBa).
  • the lower end 58B of the liquid introduction port 58 is the lower height defined by the second lower height position HBb (that is, the second lower set value VBb). It is placed at the position HB).
  • the processing liquid supply unit 41 does not supply the processing liquid to the lower surface of the substrate W
  • the lower end 58B of the liquid introduction port 58 is arranged at the second lower height position HBb.
  • the first upper height position HTe is higher than the second upper height position HTf.
  • the second upper height position HTf is higher than the third upper height position HTg.
  • the first lower height position HBa is lower than the second lower height position HBb.
  • the rotation drive unit 35 rotates the substrate holding unit 31, and the processing liquid supply unit 41 supplies the processing liquid to the substrate W held by the substrate holding unit 31.
  • the liquid recovery unit 50 collects the processing liquid scattered from the substrate W.
  • the upper surface of the peripheral portion 22 of the substrate W is arranged at a position higher than the upper surface of the main portion 23 of the substrate W.
  • the upper surface of the substrate W is substantially flat. More specifically, the upper surface of the peripheral edge portion 22 of the substrate W is arranged at substantially the same height as the upper surface of the main portion 23 of the substrate W.
  • the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31, the processing liquid flows from the main portion 23 to the peripheral portion 22 along the upper surface of the substrate W.
  • the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding portion 31, the processing liquid is transferred. It flows upward from the main portion 23 to the peripheral portion 22 along the upper surface of the substrate W. Therefore, the processing liquid tends to scatter upward from the substrate W.
  • the treatment liquid tends to scatter from the substrate W to a high position.
  • the upper end 58T of the liquid introduction port 58 is arranged at the first upper height position HTe.
  • the first upper height position HTe is relatively high. Therefore, the liquid introduction port 58 can suitably introduce the treatment liquid into the recovery space 57.
  • the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding portion 31, the processing liquid is used. , Flows substantially horizontally from the main portion 23 to the peripheral portion 22 along the upper surface of the substrate W. Therefore, the processing liquid is unlikely to scatter upward from the substrate W. The treatment liquid is unlikely to scatter from the substrate W to a high position.
  • the upper end 58T of the liquid introduction port 58 is arranged at the second upper height position HTf.
  • the second upper height position HTf is lower than the first upper height position HTe. Therefore, the liquid introduction port 58 can suitably introduce the treatment liquid into the recovery space 57.
  • the processing liquid supply unit 41 does not supply the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31, the processing liquid does not flow along the upper surface of the substrate W. Therefore, the treatment liquid is more difficult to scatter upward from the substrate W.
  • the treatment liquid is more difficult to scatter from the substrate W to a higher position.
  • the upper end 58T of the liquid introduction port 58 is arranged at the third upper height position HTg.
  • the third upper height position HTg is lower than the first upper height position HTe. Further, the third upper height position HTg is lower than the second upper height position HTf. Therefore, the liquid introduction port 58 can suitably introduce the treatment liquid into the recovery space 57.
  • the lower surface of the peripheral edge portion 22 of the substrate W is arranged at a position lower than the lower surface of the main portion 23 of the substrate W.
  • the lower surface of the substrate W is substantially flat. More specifically, the lower surface of the peripheral edge portion 22 of the substrate W is arranged at substantially the same height as the lower surface of the main portion 23 of the substrate W.
  • the processing liquid supply unit 41 supplies the processing liquid to the lower surface of the substrate W held by the substrate holding unit 31, the processing liquid flows from the main portion 23 to the peripheral portion 22 along the lower surface of the substrate W.
  • the processing liquid supply unit 41 supplies the processing liquid to the lower surface of the substrate W held by the substrate holding portion 31, the processing liquid is transferred. It flows downward from the main portion 23 to the peripheral portion 22 along the lower surface of the substrate W. Therefore, the processing liquid tends to scatter downward from the substrate W.
  • the treatment liquid tends to scatter from the substrate W to a lower position.
  • the lower end 58B of the liquid introduction port 58 is arranged at the first lower height position HBa.
  • the first lower height position HBa is relatively low. Therefore, the liquid introduction port 58 can suitably introduce the treatment liquid into the recovery space 57.
  • the processing liquid supply unit 41 supplies the processing liquid to the lower surface of the substrate W held by the substrate holding portion 31, the processing liquid is used. , Flows substantially horizontally from the main portion 23 to the peripheral portion 22 along the lower surface of the substrate W. Therefore, the treatment liquid is unlikely to scatter downward from the substrate W. The treatment liquid is unlikely to scatter from the substrate W to a low position.
  • the lower end 58B of the liquid introduction port 58 is arranged at the second lower height position HBb.
  • the second lower height position HBb is higher than the first lower height position HBa. Therefore, the liquid introduction port 58 can suitably introduce the treatment liquid into the recovery space 57.
  • the processing liquid supply unit 41 does not supply the processing liquid to the lower surface of the substrate W held by the substrate holding unit 31, the processing liquid does not flow along the lower surface of the substrate W. Therefore, the treatment liquid is less likely to scatter downward from the substrate W. The treatment liquid is more difficult to scatter from the substrate W to a lower position.
  • the lower end 58B of the liquid introduction port 58 is arranged at the second lower height position HBb.
  • the second lower height position HBb is higher than the first lower height position HBa. Therefore, the liquid introduction port 58 can suitably introduce the treatment liquid into the recovery space 57.
  • the control unit 18 controls the guard drive unit 60 according to the shape of the substrate W held by the substrate holding unit 31, so that the upper height position HT change. Further, in the third embodiment, the control unit 18 changes the lower height position HB by controlling the guard drive unit 60 according to the shape of the substrate W held by the substrate holding unit 31. Therefore, the liquid introduction port 58 can be adjusted to a more appropriate height position according to the shape of the substrate W held by the substrate holding portion 31. Therefore, regardless of the shape of the substrate W held by the substrate holding unit 31, the liquid collecting unit 50 can more preferably recover the processing liquid scattered from the substrate W. Therefore, the processing unit 14 can process the substrate W more appropriately. That is, the substrate processing apparatus 1 can process the substrate W more appropriately.
  • the storage unit 18a stores the first upper set value VTe, the second upper set value VTf, and the third upper set value VTg.
  • the setting unit 18b switches between the first upper set value VTe, the second upper set value VTf, and the third upper set value VTg according to the shape of the substrate W held by the substrate holding unit 31.
  • the storage unit 18a stores the first lower set value VBa and the second lower set value VBb.
  • the setting unit 18b switches between the first lower set value VBa and the second lower set value VBb according to the shape of the substrate W held by the substrate holding unit 31. Therefore, the control unit 18 can suitably determine both the upper height position HT and the lower height position HB. Therefore, the control unit 18 can suitably change the upper height position HT and the lower height position HB according to the shape of the substrate W held by the substrate holding unit 31.
  • the processing unit 14 processes the substrate W (S25).
  • the method for processing the substrate W by the processing unit 14 includes three steps. In the first step, the substrate W is held in a horizontal posture by the substrate holding portion 31. In the second step, the first guard 51 and the second guard 52 move in the vertical direction according to the shape of the substrate W held by the substrate holding portion 31, so that the upper height position HT and the lower height position HB change. In the third step, the substrate holding portion 31 is rotated to supply the processing liquid to the substrate W held by the substrate holding portion 31, and the processing liquid passing through the liquid introduction port 58 is supplied to the first guard 51 and the second guard 51 and the second. Received by guard 52. Therefore, the processing unit 14 can process the substrate W more appropriately.
  • the substrate W held by the substrate holding portion 31 has the upper recess 24A is a matter that affects the direction of the processing liquid scattered from the substrate W.
  • the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31 is also a matter that affects the direction of the processing liquid scattered from the substrate W.
  • the control unit 18 changes the upper height position HT in consideration of both matters. Therefore, the control unit 18 can adjust the upper end 58T of the liquid introduction port 58 to an appropriate height position. Therefore, the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W.
  • the liquid introduction port 58 When the substrate W held by the substrate holding portion 31 has an upper recess 24A and the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding portion 31, the liquid introduction port 58 The upper end 58T of the above is arranged at the first upper height position HTe. When the substrate W held by the substrate holding portion 31 does not have the upper recess 24A, the upper end 58T of the liquid introduction port 58 is arranged at the second upper height position HTf or the third upper height position HTg. When the liquid supply unit 41 does not supply the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31, the upper end 58T of the liquid introduction port 58 is arranged at the third upper height position HTg.
  • the first upper height position HTe is higher than the second upper height position HTf and the third upper height position HTg. Therefore, when the substrate W held by the substrate holding portion 31 has the upper recess 24A and the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding portion 31, the liquid is recovered. Part 50 can suitably recover the processing liquid scattered from the substrate W. Even when the substrate W held by the substrate holding unit 31 does not have the upper recess 24A, the liquid collecting unit 50 can suitably collect the processing liquid scattered from the substrate W. Even when the liquid supply unit 41 does not supply the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31, the liquid recovery unit 50 can suitably collect the processing liquid scattered from the substrate W.
  • the upper end 58T of the liquid introduction port 58 is arranged at the third upper height position HTg.
  • the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31
  • the upper end 58T of the liquid introduction port 58 is set to the first upper height position HTe or the second upper height position HTf. Be placed.
  • the third upper height position HTg is lower than the first upper height position HTe and the second upper height position HTf. Therefore, when the processing liquid supply unit 41 does not supply the processing liquid to the upper surface of the substrate W held by the substrate holding unit 31, the liquid recovery unit 50 can more preferably recover the processing liquid scattered from the substrate W.
  • the substrate W held by the substrate holding portion 31 has the lower recess 24B is a matter that has a great influence on the direction of the processing liquid scattered from the substrate W.
  • the processing liquid supply unit 41 supplies the processing liquid to the lower surface of the substrate W held by the substrate holding unit 31 is also a matter that has a great influence on the direction of the processing liquid scattered from the substrate W.
  • the control unit 18 changes the lower height position HB in consideration of both matters. Therefore, the control unit 18 can adjust the lower end 58B of the liquid introduction port 58 to an appropriate height position. Therefore, the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W.
  • the liquid introduction port 58 The lower end 58B of the above is arranged at the first lower height position HBa.
  • the lower end 58B of the liquid introduction port 58 is arranged at the second lower height position HBb.
  • the liquid supply unit 41 does not supply the processing liquid to the lower surface of the substrate W held by the substrate holding unit 31, the lower end 58B of the liquid introduction port 58 is arranged at the second lower height position HBb.
  • the first lower height position HBa is lower than the second lower height position HBb. Therefore, when the substrate W held by the substrate holding portion 31 has the lower recess 24B and the processing liquid supply unit 41 supplies the processing liquid to the lower surface of the substrate W held by the substrate holding portion 31, the liquid is recovered. Part 50 can suitably recover the processing liquid scattered from the substrate W. Even when the substrate W held by the substrate holding unit 31 does not have the lower recess 24B, the liquid collecting unit 50 can suitably collect the processing liquid scattered from the substrate W. Even when the liquid supply unit 41 does not supply the processing liquid to the lower surface of the substrate W held by the substrate holding unit 31, the liquid recovery unit 50 can suitably collect the processing liquid scattered from the substrate W.
  • the present invention is not limited to the first, second, and third embodiments, and can be modified and implemented as follows.
  • control unit 18 changes the upper height position HT.
  • control unit 18 changes the upper height position HT and the lower height position HB.
  • the control unit 18 may change at least one of the upper height position HT and the lower height position HB.
  • the factors that change the height position of the liquid introduction port 58 are the thickness of the main portion 23, the presence or absence of the recess 24, the portion of the substrate W on which the recess 24 is arranged, and the treatment liquid.
  • the part of the substrate to be supplied is illustrated.
  • the factor that changes the height position of the liquid introduction port 58 may be the size of the recess 24 or the shape of the recess 24.
  • the shape of the substrate W considered by the control unit 18 in order to change at least one of the upper height position HT and the lower height position HB may be the size of the recess 24 or the shape of the recess 24.
  • the control unit 18 may change the height position of the liquid introduction port 58 according to the size of the recess 24 and the shape of the recess 24.
  • FIG. 12 is a cross-sectional view of the substrate W.
  • the control unit 18 may change at least one of the upper height position HT and the lower height position HB according to the depth D.
  • the depth D is the depth of the main portion 23 with respect to the peripheral edge portion 22. More specifically, the depth D corresponds to the difference between the height position of the peripheral portion 22 and the height position of the main portion 23.
  • the depth D can also be referred to as "the depth of the recess 24".
  • the depth D is a matter that affects the direction of the processing liquid scattered from the substrate W. For example, when the substrate W held by the substrate holding portion 31 has a first depth D1, the upper end 58T of the liquid introduction port 58 has a substrate W held by the substrate holding portion 31 smaller than the first depth D1.
  • the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W regardless of the depth D of the recess 24.
  • the substrate W includes a recess 24 and a wall portion 26.
  • the wall portion 26 is formed between the peripheral portion 22 and the main portion 23. More specifically, the wall portion 26 extends from the inner edge of the peripheral edge portion 22 to the outer edge of the main portion 23.
  • the peripheral edge portion 22 and the main portion 23 are horizontal, and the wall portion 26 is not horizontal.
  • the control unit 18 may change at least one of the upper height position HT and the lower height position HB according to the angle ⁇ of the wall portion 26.
  • the angle ⁇ of the wall portion 26 is, for example, the angle of the wall portion 26 with respect to the horizon.
  • the angle of the wall portion 26 is a matter that affects the direction of the processing liquid scattered from the substrate W.
  • the upper end 58T of the liquid introduction port 58 is such that the wall portion 26 of the substrate W held by the substrate holding portion 31 is the first. It may be higher than the upper end 58 of the liquid inlet 58 when tilted at a second angle smaller than one angle.
  • the upper height position HT may increase as the angle of the wall portion 26 increases.
  • the liquid recovery unit 50 can suitably recover the processing liquid scattered from the substrate W regardless of the angle ⁇ of the wall portion 26.
  • the guard drive unit 60 moves only the second guard 52. However, it is not limited to this.
  • the guard drive unit 60 may move at least one of the first guard 51 and the second guard 52.
  • the guard drive unit 60 may move the first guard 51.
  • the control unit 18 can change the lower height position HB.
  • the liquid recovery unit 50 has two guards. However, it is not limited to this.
  • the liquid recovery unit 50 may include three or more guards.
  • FIG. 13 is a diagram schematically showing the processing unit 14 according to the modified embodiment.
  • the same components as those in the embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.
  • the liquid recovery unit 50 includes a third guard 81 and a fourth guard 82 in addition to the first guard 51 and the second guard 52.
  • the third guard 81 and the fourth guard 82 each receive the treatment liquid.
  • the third guard 81 and the fourth guard 82 are arranged so as to surround the side of the substrate holding portion 31, respectively.
  • the third guard 81 and the fourth guard 82 have a substantially cylindrical shape centered on the rotation axis A.
  • the third guard 81 is arranged outside the second guard 52.
  • the fourth guard 82 is arranged outside the third guard 81.
  • the third guard 81 and the fourth guard 82 have substantially the same structure as the first guard 51 and the second guard 52. That is, the third guard 81 includes a vertical portion 83 and an inclined portion 84. The vertical portion 83 is arranged outside the vertical portion 55. The inclined portion 84 is arranged above the inclined portion 56. The inclined portion 84 has an upper edge 84A. The fourth guard 82 includes a vertical portion 85 and an inclined portion 86. The vertical portion 85 is arranged outside the vertical portion 83. The inclined portion 86 is arranged above the inclined portion 84. The inclined portion 86 has an upper edge 86A.
  • the first guard 51, the second guard 52, the third guard 81, and the fourth guard 82 are examples of guards in the present invention, respectively.
  • the guard drive unit 60 includes a third guard drive mechanism 63 and a fourth guard drive mechanism 64 in addition to the first guard drive mechanism 61 and the second guard drive mechanism 62.
  • the third guard drive mechanism 63 moves the third guard 81 in the vertical direction.
  • the fourth guard drive mechanism 64 moves the fourth guard 82 in the vertical direction.
  • the first guard 51, the second guard 52, the third guard 81, and the fourth guard 82 can move in the vertical direction independently of each other.
  • the upper edge 54A of the inclined portion 54 of the first guard 51 is always lower than the upper edge 56A of the inclined portion 56 of the second guard 52.
  • the upper edge 56A of the inclined portion 56 of the second guard 52 is always lower than the upper edge 84A of the inclined portion 84 of the third guard 81.
  • the upper edge 84A of the inclined portion 84 of the third guard 81 is always lower than the upper edge 86A of the inclined portion 86 of the fourth guard 82.
  • FIGS. 14 (a), 14 (b), 14 (c), and 14 (d) are diagrams showing examples of guard arrangement, respectively.
  • the processing liquid supply unit 41 and the guard drive unit 60 are not shown.
  • the upper edge 86A is arranged at a position higher than the substrate W held by the substrate holding portion 31.
  • the upper edges 84A, 56A, 54A are arranged at positions lower than the upper surface 32a of the plate 32.
  • the third guard 81 and the fourth guard 82 partition the recovery space 57a and the liquid introduction port 58a.
  • the fourth guard 82 defines the upper end 58Ta of the liquid introduction port 58a.
  • the upper edge 86A of the fourth guard 82 corresponds to the upper end 58Ta of the liquid introduction port 58a.
  • the third guard 81 defines the lower end 58Ba of the liquid introduction port 58a.
  • the upper edge 84A of the third guard 81 corresponds to the lower end 58Ba of the liquid introduction port 58a.
  • the upper edges 86A and 84A are arranged at positions higher than the substrate W held by the substrate holding portion 31.
  • the upper edges 56A and 54A are arranged at positions lower than the upper surface 32a of the plate 32.
  • the second guard 52 and the third guard 81 partition the recovery space 57b and the liquid introduction port 58b.
  • the third guard 81 defines the upper end 58Tb of the liquid introduction port 58b.
  • the upper edge 84A of the third guard 81 corresponds to the upper end 58Tb of the liquid introduction port 58b.
  • the second guard 52 defines the lower end 58Bb of the liquid introduction port 58b.
  • the upper edge 56A of the second guard 52 corresponds to the lower end 58Bb of the liquid introduction port 58b.
  • the upper edges 86A, 84A, and 56A are arranged at positions higher than the substrate W held by the substrate holding portion 31.
  • the upper edge 54A is arranged at a position lower than the upper surface 32a of the plate 32.
  • the first guard 51 and the second guard 52 partition the recovery space 57c and the liquid introduction port 58c.
  • the second guard 52 defines the upper end 58Tc of the liquid introduction port 58c.
  • the upper edge 56A of the second guard 52 corresponds to the upper end 58Tc of the liquid introduction port 58c.
  • the first guard 51 defines the lower end 58Bc of the liquid introduction port 58c.
  • the upper edge 54A of the first guard 51 corresponds to the lower end 58Bc of the liquid introduction port 58c.
  • the upper edges 86A, 84A, 56A, and 54A are arranged at positions higher than the substrate W held by the substrate holding portion 31.
  • the first guard 51 partitions the recovery space 57d and the liquid introduction port 58d.
  • the recovery space 57d is arranged below the inclined portion 54 of the first guard 51 and inside the vertical portion 53 of the first guard 51.
  • the first guard 51 defines the upper end 58Td of the liquid introduction port 58d.
  • the upper edge 54A of the first guard 51 corresponds to the upper end 58Td of the liquid introduction port 58d.
  • none of the first guard 51, the second guard 52, the third guard 81, and the fourth guard 82 defines the lower end 58Bd of the liquid introduction port 58d.
  • the liquid introduction ports 58a, 58b, 58c, 58d are appropriately collectively referred to as the liquid introduction ports 58.
  • the upper ends 58Ta, 58Tb, 58Tc, and 58Td are appropriately collectively referred to as the upper ends 58T.
  • the lower ends 58Ba, 58Bb, 58Bc, 58Bd are appropriately collectively referred to as the lower ends 58B.
  • the guard defining the upper end 58T of the liquid introduction port 58 may be switched between the first guard 51, the second guard 52, the third guard 81, and the fourth guard 82.
  • the guard defining the lower end 58B of the liquid introduction port 58 may also be switched between the first guard 51, the second guard 52, and the third guard 81.
  • the lower end 58B of the liquid inlet 58 does not have to be defined by the guard.
  • the liquid introduction port 58 is switched between the liquid introduction ports 58a, 58b, 58c, and 58d. Therefore, the treatment liquid scattered from the substrate W can be recovered by using one selected from the plurality of liquid introduction ports 58a, 58b, 58c, and 58d.
  • the recovery space 57 switches between the recovery spaces 57a, 57b, 57c, and 57d. Therefore, the treatment liquid scattered from the substrate W can be recovered by using one selected from the plurality of recovery spaces 57a, 57b, 57c, and 57d. Therefore, when the treatment liquid supply unit 41 uses a plurality of types of treatment liquids, the liquid recovery unit 50 can separate and recover the plurality of types of treatment liquids.
  • the upper height position HT is selected from two height positions (specifically, the first upper height position HTa and the second upper height position HTb). In other words, in the first embodiment described above, the height position HT changes in two steps. However, it is not limited to this.
  • the upper height position HT may be selected from three or more height positions. In other words, the height position HT may change in three or more steps.
  • the upper height position HT may be adjusted steplessly. For example, as the thickness of the main portion 23 decreases, the upper height position HT may increase. The determination and adjustment of the lower height position HB may be changed in the same manner.
  • the substrate holding portion 31 includes an edge contact pin 33.
  • the edge contact pin 33 may be omitted from the substrate holding portion 31.
  • the substrate holding portion 31 may hold the substrate W by a so-called Bernoulli chuck or Bernoulli gripper.
  • FIG. 15 is a diagram schematically showing the processing unit 14 according to the modified embodiment.
  • the same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.
  • the board holding portion 31 includes a plurality of fixing pins 91.
  • the fixing pin 91 supports the substrate W.
  • Each fixing pin 91 is fixed to the plate 32.
  • Each fixing pin 91 is immovable with respect to the plate 32.
  • Each fixing pin 91 is non-rotatable with respect to the plate 32.
  • Each fixing pin 91 does not have a movable portion that is movable with respect to the plate 32.
  • the fixing pin 91 projects upward from the upper surface 32a of the plate 32.
  • the fixing pin 91 comes into contact with the lower surface of the substrate W. More specifically, the fixing pin 91 contacts the lower surface of the peripheral edge portion 22 of the substrate W. As a result, the fixing pin 91 supports the substrate W at a position higher than the upper surface 32a of the plate 32.
  • the substrate W supported by the fixing pin 91 is arranged at a position higher than the upper surface 32a.
  • the fixing pin 91 does not come into contact with the upper surface of the substrate W.
  • the fixing pin 91 allows the substrate W to move upward with respect to the fixing pin 91.
  • the fixing pin 91 does not come into contact with the edge of the substrate W.
  • the fixing pin 91 itself allows the substrate W to slide with respect to the fixing pin 91. As described above, the fixing pin 91 itself does not hold the substrate W.
  • the substrate holding portion 31 includes a gas outlet 93.
  • the gas outlet 93 is formed on the upper surface 32a of the plate 32.
  • the gas outlet 93 is arranged at a position overlapping the substrate W supported by the fixing pin 91 in a plan view.
  • the gas outlet 93 blows out gas upward.
  • the gas outlet 93 blows gas between the upper surface 32a of the plate 32 and the lower surface of the substrate W supported by the fixing pin 91.
  • the gas outlet 93 blows gas onto the substrate W from a position below the substrate W supported by the fixing pin 91.
  • the gas is supplied between the upper surface 32a of the plate 32 and the lower surface of the substrate W supported by the fixing pin 91.
  • the gas flows along the lower surface of the substrate W supported by the fixing pin 91.
  • the gas outlet 93 sucks the substrate W.
  • a negative pressure is formed by the gas flowing along the lower surface of the substrate W. That is, the air pressure received by the lower surface of the substrate W is smaller than the air pressure received by the upper surface of the substrate W.
  • a downward force acts on the substrate W. That is, the substrate W is sucked downward.
  • the substrate W is sucked toward the gas outlet 93 and the plate 32.
  • the suction force acting on the substrate W increases.
  • the gas outlet 93 does not come into contact with the substrate W.
  • the plate 32 also does not come into contact with the substrate W.
  • the gas outlet 93 sucks the substrate W downward, and the fixing pin 91 comes into contact with the lower surface of the substrate W, so that the substrate W is supported and kept in a predetermined position. Due to the suction force acting on the substrate W, the substrate W does not slide horizontally with respect to the fixing pin 91. In this way, the substrate holding portion 31 holds the substrate W.
  • the gas outlet 93 includes, for example, a plurality of first outlets 94.
  • the first outlet 94 is arranged outside the second nozzle 45.
  • the first outlet 94 is arranged inside the rotation axis A with respect to the fixing pin 91.
  • the first outlet 94 is arranged on the circumference around the rotation axis A in a plan view.
  • the fixing pin 91 is an example of the support portion in the present invention.
  • the processing unit 14 includes a first gas supply path 96.
  • the first gas supply path 96 supplies gas to the first outlet 94.
  • a part of the first gas supply path 96 is formed inside the plate 32.
  • the first gas supply path 96 has a first end and a second end.
  • the first end of the first gas supply path 96 is connected to the gas supply source 98.
  • the second end of the first gas supply path 96 is connected to the first outlet 94.
  • the gas supplied to the first outlet 94 is, for example, nitrogen gas or air.
  • the gas supplied to the first outlet 94 is, for example, a high pressure gas or a compressed gas.
  • the processing unit 14 includes a blowout adjusting unit 101.
  • the blowout adjusting unit 101 adjusts the flow rate of the gas blown out by the gas outlet 93.
  • the blowout adjusting unit 101 is provided in the first gas supply path 96.
  • the blowout adjusting unit 101 adjusts the flow rate of the gas supplied to the first outlet 94.
  • the gas outlet 93 may further include a second outlet arranged at the center of the upper surface 32a of the plate 32.
  • the blowout adjusting unit 101 may individually adjust the flow rate of the gas blown out by the first outlet 94 and the flow rate of the gas blown out by the second outlet.
  • the gas outlet 93 may further blow gas upward through the second nozzle 45.
  • the blowout adjusting unit 101 may individually adjust the flow rate of the gas blown out by the first outlet 94 and the flow rate of the gas blown out through the second nozzle 45.
  • the processing liquid supply unit 41 supplies the processing liquid to the upper surface of the substrate W.
  • the treatment liquid supply unit 41 does not have to supply the treatment liquid to the upper surface of the substrate W.
  • the processing liquid supply unit 41 may supply the processing liquid only to the lower surface of the substrate W.
  • the control unit 18 may change only the lower height position HB without changing the upper height position HT.
  • the treatment liquid supply unit 41 supplies the treatment liquid to the lower surface of the substrate W.
  • the treatment liquid supply unit 41 does not have to supply the treatment liquid to the lower surface of the substrate W.
  • the treatment liquid supply unit 41 may supply the treatment liquid only to the upper surface of the substrate W.
  • the control unit 18 may change only the upper height position HT without changing the lower height position HB.
  • the control unit 18 selects either the first upper set value VTa or the second upper set value VTb.
  • the storage unit 18a may store the first processing recipe including the first upper set value VTa and the second processing recipe including the second upper set value VTb.
  • the control unit 18 may select either the first processing recipe or the second processing recipe.
  • the control unit 18 can suitably determine the upper height position HT.
  • the control unit 18 may select one from a plurality of processing recipes stored in the storage unit 18a.
  • control unit 18 determines the shape of the substrate W based on the detection results of the barcode reader 4 and the shape detection units 13 and 67. However, it is not limited to this. For example, the control unit 18 may determine the shape of the substrate W based on the detection result of any one of the barcode reader 4 and the shape detection units 13 and 67.
  • control unit 18 determines the shape of the substrate W based on the detection results of the barcode reader 4 and the shape detection units 13 and 67. However, it is not limited to this.
  • the substrate processing device 1 may include a substrate information detection unit (not shown) that reads substrate information attached to the substrate W.
  • the control unit 18 may determine the shape of the substrate W based on the detection result of the substrate information detection unit.
  • the substrate information attached to the substrate W is, for example, an identification code printed on the substrate W.
  • the board information detection unit is, for example, a reader.
  • the control unit 18 may further acquire information from an external device of the substrate processing device 1.
  • the external device of the substrate processing device 1 is, for example, a host computer.
  • the control unit 18 may transmit, for example, the detection result of the barcode reader 4 to the external device before the control unit 18 acquires the information from the external device.
  • the control unit 18 before the control unit 18 acquires information from the external device, transmits, for example, the detection results of the shape detection units 13 and 67 and the detection results of the presence / absence detection units 6 and 16 to the external device. You may send it.
  • control unit 18 information acquired by the control unit 18 from an external device will be illustrated.
  • control unit 18 may acquire information regarding the shape of the substrate W (hereinafter referred to as substrate shape information) from an external device of the substrate processing device 1.
  • the control unit 18 may specify the shape of the substrate W based on the substrate shape information acquired from the external device.
  • the substrate shape information may be, for example, information that directly indicates the shape of the substrate W.
  • the information that directly indicates the shape of the substrate W is, for example, directly at least one of the thickness of the main portion 23 of the substrate W, the depth D of the recess 24 of the substrate W, and the angle ⁇ of the wall portion 26 of the substrate W. Information to be shown.
  • the information that directly indicates the shape of the substrate W may include information that directly indicates whether or not the substrate W has the recess 24.
  • the information that directly indicates the shape of the substrate W may include information that directly indicates whether or not the recess 24 is formed on the upper surface of the substrate W.
  • the information that directly indicates the shape of the substrate W may include information that directly indicates whether or not the recess 24 is formed on the lower surface of the substrate W.
  • the control unit 18 acquires information that directly indicates the shape of the substrate W, the control unit 18 does not perform the step of determining the shape of the substrate W (for example, steps S2, S12, and S22).
  • the substrate shape information may be, for example, information that indirectly indicates the shape of the substrate W.
  • the control unit 18 acquires information indirectly indicating the shape of the substrate W
  • the control unit 18 determines the shape of the substrate W based on the information indirectly indicating the shape of the substrate W (for example, step). S2, S12, S22) is performed.
  • the control unit 18 may acquire information regarding at least one of the upper height position HT and the lower height position HB (hereinafter, referred to as liquid recovery condition information) from the external device of the substrate processing device 1.
  • the liquid recovery condition information is set according to the shape of the substrate W held by the substrate holding portion 31.
  • the control unit 18 may determine at least one of the upper height position HT and the lower height position HB based on the liquid recovery condition information acquired from the external device.
  • the control unit 18 can change at least one of the upper height position HT and the lower height position HB according to the shape of the substrate W held by the substrate holding unit 31.
  • the control unit 18 does not have to perform the step of determining the shape of the substrate W (for example, steps S2, S12, S22).
  • the liquid recovery condition information may be information that directly specifies at least one of the upper height position HT and the lower height position HB.
  • the information that directly specifies the upper height position HT may include, for example, the upper set value.
  • the control unit 18 determines the upper set value included in the liquid recovery condition information.
  • the control unit 18 changes the upper height position HT based on the upper set value included in the liquid recovery condition information.
  • the information that directly specifies the lower height position HB may include, for example, the lower set value.
  • the control unit 18 determines the lower set value included in the liquid recovery condition information.
  • the control unit 18 changes the lower height position HB based on the lower set value included in the liquid recovery condition information.
  • the liquid recovery condition information may be information that indirectly specifies at least one of the upper height position HT and the lower height position HB.
  • the information that indirectly specifies the upper height position HT may include, for example, the upper set value identification information that identifies the upper set value.
  • the storage unit 18a stores a plurality of upper set values. Then, the control unit 18 specifies the upper set value designated by the upper set value identification information from the plurality of upper set values stored in the storage unit 18a. Then, the control unit 18 determines the specified upper set value. The control unit 18 changes the upper height position HT based on the specified upper set value.
  • the information that indirectly specifies the upper height position HT may include, for example, recipe identification information that identifies the processing recipe.
  • the storage unit 18a stores a plurality of processing recipes. Then, the control unit 18 identifies the processing recipe designated by the recipe identification information from the plurality of processing recipes stored in the storage unit 18a. Then, the control unit 18 determines the upper set value included in the specified processing recipe. The control unit 18 changes the upper height position HT based on the determined upper set value.
  • the information that indirectly specifies the lower height position HT may include, for example, the lower set value identification information that identifies the lower set value.
  • the storage unit 18a stores a plurality of lower set values. Then, the control unit 18 specifies the lower set value specified by the lower set value identification information from the plurality of lower set values stored in the storage unit 18a. Then, the control unit 18 determines the specified lower set value. The control unit 18 changes the lower height position HB based on the specified lower set value.
  • the information that indirectly specifies the lower height position HB may include, for example, recipe identification information that identifies the processing recipe.
  • the storage unit 18a stores a plurality of processing recipes. Then, the control unit 18 identifies the processing recipe designated by the recipe identification information from the plurality of processing recipes stored in the storage unit 18a. Then, the control unit 18 determines the lower set value included in the specified processing recipe. The control unit 18 changes the lower height position HB based on the determined lower set value.
  • the control unit 18 may further acquire information from the input unit 17.
  • the user may input the board shape information into the input unit 17.
  • the control unit 18 may specify the shape of the substrate W based on the substrate shape information input to the input unit 17.
  • the substrate shape information input to the input unit 17 may be, for example, information that directly indicates the shape of the substrate W.
  • the substrate shape information input to the input unit 17 may be, for example, information that indirectly indicates the shape of the substrate W.
  • the user may input the liquid recovery condition information into the input unit 17.
  • the liquid recovery condition information input to the input unit 17 is set according to the shape of the substrate W held by the substrate holding unit 31.
  • the control unit 18 may determine at least one of the upper height position HT and the lower height position HB based on the liquid recovery condition information input to the input unit 17.
  • the liquid recovery condition information input to the input unit 17 may be, for example, information that directly specifies at least one of the upper height position HT and the lower height position HB.
  • the liquid recovery condition information input to the input unit 17 may be, for example, information that indirectly specifies at least one of the upper height position HT and the lower height position HB.
  • control unit 18 can change at least one of the upper height position HT and the lower height position HB according to the shape of the substrate W held by the substrate holding unit 31.
  • control unit 18 does not have to perform the step of determining the shape of the substrate W (for example, steps S2, S12, S22).
  • the number of the first nozzles 42 included in the processing liquid supply unit 41 is There is one. However, it is not limited to this. The number of the first nozzles 42 included in the processing liquid supply unit 41 may be plural.
  • the number of the second nozzles 45 included in the processing liquid supply unit 41 is one. However, it is not limited to this.
  • the number of the second nozzles 45 included in the processing liquid supply unit 41 may be a plurality.
  • the first guard 51 and the second guard 52 are not connected to the cup 59. However, it is not limited to this. Any one of the first guard 51 and the second guard 52 may be connected to the cup 59. Any one of the first guard 51 and the second guard 52 may be integrally formed with the cup 59. Any one of the first guard 51 and the second guard 52 may be inseparable from the cup 59.
  • the number of transport mechanisms 15 provided in the processing block 11 is one. However, it is not limited to this.
  • the number of transport mechanisms 15 provided in the processing block 11 may be two or more.
  • the number of processing units 14 may be increased according to the number of transport mechanisms 15 in the processing block 11.
  • Guard drive mechanism (first guard drive unit) 62 ... Guard drive mechanism (second guard drive unit) 63 ... 3rd guard drive mechanism 64 ... 4th guard drive mechanism 67 ... Shape detector 81 ... 3rd guard (guard) 82 ... 4th guard (guard) 83... Vertical part 84... Inclined part 84A... Upper edge 85... Vertical part 86... Inclined part 86A... Upper edge 91... Fixing pin (support part) 93 ... Gas outlet 94 ... 1st outlet 101 ... Blow-out adjustment part A ... Rotation axis C ... Carrier D ...
  • Depth of main part with respect to peripheral part depth of recess
  • HT Upper height position (height position of the upper end of the liquid inlet) HTa, HTc, HTe ... 1st upper height position HTb, HTd, HTf ... 2nd upper height position HTg ... 3rd upper height position HB ...

Abstract

La présente invention concerne un dispositif de traitement de substrat et un procédé de traitement de substrat. Le dispositif de traitement de substrat 1 comprend une unité de traitement 14 et une unité de commande 18. L'unité de traitement 14 comprend une partie de maintien de substrat 31, une unité d'entraînement en rotation 35, une unité d'alimentation en fluide de traitement 41, une unité de récupération de fluide 50 et une unité d'entraînement de protection 60. La partie de maintien du substrat 31 maintient un substrat W dans une posture horizontale. L'unité d'entraînement en rotation 35 fait tourner la partie de maintien de substrat 31. L'unité de récupération de fluide 50 comprend une première protection 51, une seconde protection 52 et une ouverture d'introduction de fluide 58. La première protection 51 et la seconde protection 52 sont positionnées de manière à entourer les côtés de la partie de maintien de substrat 31. L'ouverture d'introduction de fluide 58 est délimitée par les protections. L'ouverture d'introduction de fluide 58 est ouverte sur le substrat W maintenu par la partie de maintien de substrat 31. L'unité d'entraînement de protection 60 déplace la seconde protection 52 dans la direction verticale. L'unité de commande 18 commande l'unité d'entraînement de protection 60 en fonction de la forme du substrat W maintenu par la partie de maintien de substrat 31, et modifie la position en hauteur de l'extrémité supérieure 58T de l'ouverture d'introduction de fluide 58.
PCT/JP2020/020548 2019-09-20 2020-05-25 Dispositif de traitement de substrat et procédé de traitement de substrat WO2021053885A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202080064773.XA CN114402420A (zh) 2019-09-20 2020-05-25 基板处理装置以及基板处理方法
US17/640,858 US20220344176A1 (en) 2019-09-20 2020-05-25 Substrate treating apparatus and substrate treating method
KR1020227008922A KR102619560B1 (ko) 2019-09-20 2020-05-25 기판 처리 장치 및 기판 처리 방법

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JP2019-171511 2019-09-20
JP2019171511A JP7313244B2 (ja) 2019-09-20 2019-09-20 基板処理装置および基板処理方法

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JP (1) JP7313244B2 (fr)
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CN (1) CN114402420A (fr)
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WO (1) WO2021053885A1 (fr)

Citations (4)

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JPH1187294A (ja) * 1997-09-04 1999-03-30 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2006060252A (ja) * 2005-10-27 2006-03-02 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2006286833A (ja) * 2005-03-31 2006-10-19 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009110985A (ja) * 2007-10-26 2009-05-21 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

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TW504776B (en) * 1999-09-09 2002-10-01 Mimasu Semiconductor Ind Co Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
JP3445535B2 (ja) * 1999-09-24 2003-09-08 株式会社東芝 バイパス制御回路
FR2965974B1 (fr) * 2010-10-12 2013-11-29 Soitec Silicon On Insulator Procédé de collage moléculaire de substrats en silicium et en verre
JP6282904B2 (ja) 2014-03-14 2018-02-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6740028B2 (ja) * 2015-07-29 2020-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP6618113B2 (ja) * 2015-11-02 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI645913B (zh) * 2016-11-10 2019-01-01 辛耘企業股份有限公司 液體製程裝置
KR102046872B1 (ko) * 2017-10-17 2019-11-20 세메스 주식회사 기판 처리 장치 및 방법

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Publication number Priority date Publication date Assignee Title
JPH1187294A (ja) * 1997-09-04 1999-03-30 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2006286833A (ja) * 2005-03-31 2006-10-19 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2006060252A (ja) * 2005-10-27 2006-03-02 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009110985A (ja) * 2007-10-26 2009-05-21 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

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US20220344176A1 (en) 2022-10-27
TWI768370B (zh) 2022-06-21
TW202113952A (zh) 2021-04-01
JP2021048357A (ja) 2021-03-25
CN114402420A (zh) 2022-04-26
JP7313244B2 (ja) 2023-07-24
KR20220045225A (ko) 2022-04-12

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