WO2021044581A1 - 基板処理装置、半導体装置の製造方法およびプログラム - Google Patents

基板処理装置、半導体装置の製造方法およびプログラム Download PDF

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Publication number
WO2021044581A1
WO2021044581A1 PCT/JP2019/034992 JP2019034992W WO2021044581A1 WO 2021044581 A1 WO2021044581 A1 WO 2021044581A1 JP 2019034992 W JP2019034992 W JP 2019034992W WO 2021044581 A1 WO2021044581 A1 WO 2021044581A1
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Prior art keywords
chamber
processing
waiting
substrate
chambers
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Ceased
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PCT/JP2019/034992
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English (en)
French (fr)
Japanese (ja)
Inventor
野内　英博
重倫 手塚
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Kokusai Electric Corp
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Kokusai Electric Corp
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Priority to JP2021543892A priority Critical patent/JP7221403B2/ja
Priority to PCT/JP2019/034992 priority patent/WO2021044581A1/ja
Publication of WO2021044581A1 publication Critical patent/WO2021044581A1/ja
Priority to US17/687,046 priority patent/US20220189801A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3222—Loading to or unloading from a conveyor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces

Definitions

  • This disclosure relates to a substrate processing apparatus, a manufacturing method and a program of a semiconductor apparatus.
  • processing for improving work efficiency may be performed, such as simultaneously carrying the substrate into a plurality of processing chambers (for example, a patent). Reference 1).
  • the object of the present disclosure is to further improve work efficiency in the substrate processing process.
  • the substrate processing apparatus 100 of the present disclosure includes first to fourth processing chambers PM11 to PM42 for processing a substrate, and first to fourth transport chambers TM1 to TM4 including first to fourth transport robots TH1 to TH4 for transporting the substrate.
  • the adjusting mechanisms AC1 to AC4, an atmospheric transport chamber LH adjacent to the first standby chamber WM1, and load ports LP1 and LP2 adjacent to the atmospheric transport chamber LH are mainly provided.
  • the first to fourth transport chambers TM1 to TM4 and the first to fourth waiting chambers WM1 to WM4 are arranged so as to be alternately adjacent to each other.
  • the first transport chamber TM1 is adjacent to the atmospheric transport chamber LH via the first standby chamber WM1.
  • the second transport chamber TM2 is adjacent to the first transport chamber TM1 via the second waiting chamber WM2.
  • the third transport chamber TM3 is connected to the second transport chamber TM2 via the third standby chamber WM3.
  • the fourth transport chamber TM4 is adjacent to the third transport chamber TM3 via the fourth standby chamber WM4.
  • the first to fourth processing chambers PM11 to PM42 are arranged on both side surfaces (left and right sides in FIG. 1) of the first to fourth transport chambers TM1 to TM4. Specifically, the first processing chambers PM11 and PM12 are arranged on both side surfaces of the first transport chamber TM1 when the first transport chamber TM1 is viewed from the first standby chamber WM1. Similarly, the second processing chambers PM21 and PM22 are arranged on both side surfaces of the second transport chamber TM2. Third processing chambers PM31 and PM32 are arranged on both side surfaces of the third transport chamber TM3. The fourth processing chambers PM41 and PM42 are arranged on both side surfaces of the fourth transport chamber TM4.
  • the first to fourth processing chambers PM11 to PM42 may be collectively referred to as “processing chamber PM”.
  • the first to fourth waiting rooms WM1 to WM4 may be collectively referred to simply as “waiting room WM”.
  • the first to fourth transfer robots TH1 to TH4 may be collectively referred to simply as “transfer robot TH”.
  • the first to fourth transport chambers TM1 to TM4 may be collectively referred to as simply "transport chamber TM".
  • the load ports (I / O stages) LP1 and LP2 are used as carry-in / carry-out parts for pods PD1 and PD2 used as wafer carriers.
  • the inside of the pods PD1 and PD2 is an unprocessed wafer processed in the processing chamber PM (hereinafter, may be referred to as “unprocessed wafer”) or a processed wafer processed in the processing chamber PM (hereinafter, referred to as “unprocessed wafer”). (Sometimes referred to as a "processed wafer”)) is configured to be stored in a horizontal position. By opening the front lid of the pods PD1 and PD2, the inside of the pods PD1 and PD2 and the inside of the air transport chamber LH can communicate with each other.
  • An atmospheric transport chamber LH is provided on one side of the load ports LP1 and LP2.
  • An atmospheric transfer robot (not shown) is provided in the atmospheric transfer chamber LH to transfer wafers between the pods PD1 and PD2 and the first standby chamber WM1.
  • the atmospheric transfer robot transfers five of the plurality of (for example, 25) unprocessed wafers stored in the pods PD1 and PD2 to the first standby chamber WM1. Further, the atmospheric transfer robot transfers five processed wafers from the first standby chamber WM1 into the pods PD1 and PD2 (see FIG. 7).
  • a clean gas such as an inert gas is supplied to the atmosphere transport chamber LH and is maintained at atmospheric pressure.
  • a first standby chamber WM1 is provided on the side surface of the atmospheric transport chamber LH on the opposite side where the load ports LP1 and LP2 are provided.
  • a holding area for holding the five unprocessed wafers conveyed from the pods PD1 and PD2 in a horizontal posture is provided, and five processings are performed below the holding area.
  • An empty area for holding the finished wafer is provided.
  • a gate valve (not shown) is provided between the air transport chamber LH and the first standby chamber WM1, and by opening this gate valve, the atmosphere transport chamber LH and the first standby chamber WM1 can communicate with each other. It becomes.
  • the insides of the second to fourth waiting chambers WM2 to WM4 are also configured in the same manner as the inside of the first waiting chamber WM1.
  • the first waiting chamber WM1 is provided with a first temperature adjusting mechanism AC1 for adjusting the temperature in the first waiting chamber WM1.
  • the first temperature control mechanism AC1 has a heating mechanism and a cooling mechanism.
  • the heating mechanism heats the untreated wafer held in the first waiting chamber WM1, and the cooling mechanism cools the treated wafer.
  • Known techniques can be used for the heating mechanism and the cooling mechanism.
  • the second to fourth waiting chambers WM2 to WM4 are also provided with the second to fourth temperature control mechanisms AC2 to AC4 having the same configuration and function as the first temperature control mechanism AC1.
  • the first transport chamber TM1 is provided on the side surface of the first standby chamber WM1 on the opposite side where the atmospheric transport chamber LH is provided. Inside the first transfer chamber TM1, a first transfer robot TH1 that transfers and holds wafers is provided. A gate valve (not shown) is provided between the first waiting chamber WM1 and the first transport chamber TM1, and by opening this gate valve, the inside of the first waiting chamber WM1 and the inside of the first transport chamber TM1 can communicate with each other. It becomes. Similarly, a gate valve (not shown) is provided between the first transport chamber TM1 and the first processing chamber PM11, and between the first transport chamber TM1 and the first processing chamber PM12. The insides of the second to fourth transport chambers TM2 to TM4 are also configured in the same manner as the inside of the first transport chamber TM1.
  • the first transfer robot TH1 includes a pair of arms AR11 and AR12 that temporarily hold and transfer the wafer.
  • the first transfer robot TH1 transfers the unprocessed wafers held in the first waiting chamber WM1 to the second waiting chamber WM2, and the processed wafers held in the second waiting chamber WM2 are transferred to the first waiting chamber.
  • an unprocessed wafer is placed on the arm AR11 and carried into the first processing chamber PM11, and the processed wafer is placed on the arm AR12 and carried out from the first processing chamber PM11.
  • It is configured so that it can be transported.
  • the second to fourth transfer robots TH2 to TH4 having the same configuration and functions as the first transfer robot TH1 are also provided inside the second to fourth transfer chambers TM2 to TM4.
  • both side surfaces (left and right sides in FIG. 1) of the first transport chamber TM1 are treated with a film formation or the like on the wafer.
  • a vertical processing furnace 1 (see FIG. 2) for performing a film forming process on a wafer is arranged inside the processing chambers PM11 and PM12. The configuration of the vertical processing furnace 1 will be described later. Vertical processing furnaces having the same configuration and function as the vertical processing furnace 1 are also provided inside the second to fourth processing chambers PM21 to PM42.
  • the processing chamber PM included in the substrate processing apparatus 100 of the present disclosure is configured as a vertical substrate processing chamber for processing five wafers to be processed together.
  • the vertical processing furnace 1 provided in the first processing chamber PM11 will be described as an example.
  • the processing performed by the processing chamber PM on the wafer for example, there are oxidation treatment, diffusion treatment, reflow and annealing for carrier activation and flattening after ion implantation, and film formation treatment.
  • a case where a film forming process is performed is taken as an example.
  • FIG. 2 is a side sectional view schematically showing a schematic configuration example of the inside of the first processing chamber PM11 included in the substrate processing apparatus 100 of the present disclosure.
  • the vertical processing furnace 1 includes a heater 10 as a heating unit in order to uniformly heat the reaction tube 20 described later.
  • the heater 10 has a cylindrical shape and is installed perpendicularly to the installation floor of the substrate processing apparatus by being supported by a heater base (not shown) as a holding plate.
  • a reaction tube 20 constituting a reaction vessel is arranged concentrically with the heater 10.
  • a lower chamber (load lock chamber) 30 constituting a load lock chamber for transferring the substrate is arranged.
  • a substrate support portion 40 for supporting the wafer to be processed is arranged so as to be movable in the vertical direction in the space.
  • reaction tube 20 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and is formed in a cylindrical shape having a double tube structure having an inner tube 21 and an outer tube 22.
  • quartz SiO 2
  • SiC silicon carbide
  • a processing unit 23 for processing the wafer is formed inside the inner tube 21 (that is, inside the hollow cylinder).
  • the processing unit 23 is configured to accommodate wafers supported by the boat 41 of the substrate support unit 40, which will be described later, in a state of being arranged in multiple stages in the vertical direction in a horizontal posture.
  • a nozzle 24 extending from the lower region to the upper region of the processing unit 23 is provided in the processing unit 23.
  • the nozzle 24 is provided with a plurality of gas supply holes 24a arranged along the extending direction of the nozzle 24 at positions facing the wafer supported by the boat 41. As a result, gas is supplied to the wafer from the gas supply hole 24a of the nozzle 24.
  • An exhaust flow path 25 through which gas flows is formed outside the inner pipe 21 and inside the outer pipe 22.
  • An opening 27 is provided in the lower part of the inner pipe 21 at a position facing the pumping portion 26.
  • the openings 27 are provided at a plurality of locations around the position where the pumping portion 26 is arranged at the lower part of the inner pipe 21, and are configured so that gas can be discharged to the pumping portion 26 from the inside of the inner pipe 21.
  • a gas supply pipe 51 as a gas supply line is connected to the nozzle 24 arranged inside the inner pipe 21 so as to penetrate the inner pipe 21 and the outer pipe 22.
  • At least two gas supply pipes 52 and 54 are connected to the gas supply pipe 51 so that a plurality of types of gas can be supplied into the processing unit 23.
  • a mass flow controller (MFC) 52a which is a flow controller
  • a valve 52b which is an on-off valve
  • the gas supply pipe 53 for supplying the inert gas is connected to the gas supply pipe 52.
  • the gas supply pipe 53 is provided with an MFC 53a and a valve 53b in this order from the upstream direction.
  • the gas supply pipe 52, the MFC 52a, and the valve 52b form a first processing gas supply unit which is a first processing gas supply system.
  • the MFC 54a and the valve 54b are provided in order from the upstream direction.
  • the gas supply pipe 55 for supplying the inert gas is connected to the gas supply pipe 54.
  • the gas supply pipe 55 is provided with an MFC 55a and a valve 55b in this order from the upstream direction.
  • the gas supply pipe 54, the MFC 54a, and the valve 54b form a second processing gas supply unit which is a second processing gas supply system.
  • the raw material gas containing the first metal element (the first metal-containing gas, the first raw material gas) is MFC 52a, the valve 52b, the gas supply pipe 51, and the nozzle. It is supplied into the processing unit 23 via 24.
  • a reaction gas is supplied into the processing unit 23 via the MFC 54a, the valve 54b, the gas supply pipe 51, and the nozzle 24.
  • the reaction gas for example, ammonia (NH 3 ) gas as an N-containing gas containing nitrogen (N) can be used.
  • NH 3 gas acts as a nitriding / reducing agent (nitriding / reducing gas).
  • nitrogen (N 2 ) gas as an inert gas is supplied into the processing unit 23 via the MFC 53a and 55a, the valves 53b and 55b, the gas supply pipe 51 and the nozzle 24, respectively.
  • An exhaust pipe 61 for exhausting the gas staying in the pumping portion 26 is connected to the pumping portion 26.
  • the exhaust pipe 61 includes a pressure sensor 62 as a pressure detector (pressure detection unit) for detecting the pressure in the processing unit 23, an APC (Auto Pressure Controller) valve 63, and a vacuum pump as a vacuum exhaust device in this order from the upstream side. 64 are connected.
  • the lower chamber 30 has a flange portion 31 at its upper end that supports the reaction tube 20.
  • the flange portion 31 supports the reaction tube 20.
  • the lower chamber 30 is arranged below the reaction tube 20.
  • a substrate loading / unloading outlet 32 is provided near the upper end of the lower chamber 30.
  • the substrate loading / unloading outlet 32 is configured to allow wafers to be loaded / unloaded inside and outside the lower chamber 30 by the first transport robot TH1 (see FIG. 1).
  • an inert gas supply pipe 56 is connected to the lower portion of the lower chamber 30.
  • the MFC 56a and the valve 56b are provided on the flow path of the MFC supply pipe 56 in this order from the upstream direction.
  • the inert gas supply pipe 56, the MFC 56a, and the valve 56b constitute the inert gas supply unit, which is the second inert gas supply system.
  • N 2 gas is supplied into the lower chamber 30 as the inert gas.
  • the substrate support portion 40 is movably arranged in the space formed by the reaction tube 20 and the lower chamber 30, that is, the processing portion 23 in the inner tube 21 and the transfer chamber 33 in the lower chamber 30. It has a boat 41 as a substrate support for supporting the above, and a heat insulating portion 42 arranged below the boat 41.
  • the boat 41 as a substrate support is provided with plates 41a in five stages, and the plates 41a align the five wafers in the vertical direction in a horizontal posture and in a state of being centered on each other. It is configured to support multiple stages.
  • a support rod 43 that supports the heat insulating portion 42 from below is arranged on the lower surface of the heat insulating portion 42.
  • the support rod 43 is arranged so as to penetrate the bottom of the lower chamber 30 while maintaining the confidential state of the transfer chamber 33, and is connected to the elevating mechanism (boat elevator) 44 outside the lower chamber 30. Has been done.
  • the elevating mechanism portion 44 operates so as to elevate and lower the boat 41, the heat insulating portion 42, and the support rod 43.
  • the substrate support unit 40 can move the processing unit 23 in the inner pipe 21 and the transfer chamber 33 in the lower chamber 30 in the vertical direction.
  • the elevating mechanism unit 44 performs an ascending operation
  • at least the boat 41 is located at the processing unit 23, and as a result, the processing unit is provided with respect to the wafer supported by the boat 41. It becomes possible to perform the processing in 23.
  • the elevating mechanism portion 44 performs the descending operation, the boat 41 is lowered into the transfer chamber 33 of the lower chamber 30.
  • the first transfer robot TH1 makes it possible to place five wafers on the plate 41a of the boat 41 through the substrate loading / unloading outlet 32.
  • FIG. 3 is a block diagram schematically showing a configuration example of a controller included in the substrate processing apparatus 100 of the present disclosure.
  • the substrate processing apparatus of the present disclosure has a controller 70 as a control unit that controls the operation of each unit in the substrate processing apparatus.
  • the controller 70 which is a control unit (control means), includes a CPU (Central Processing Unit) 71 as a calculation unit, a RAM (Random Access Memory) 72 as a temporary storage unit, a storage device 73 as a large-capacity storage unit, and an I / O. It is configured as a computer with port 74.
  • the RAM 72, the storage device 73, and the I / O port 74 are configured so that data can be exchanged with the CPU 71 via the internal bus 75.
  • the controller 70 is configured so that, for example, an external storage device 81, an input / output device 82 such as a touch panel can be connected.
  • the storage device 73 is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
  • a control program for controlling the operation of the substrate processing device, a process recipe in which procedures and conditions of a method for manufacturing a semiconductor device to be described later are described, and the like are readablely stored.
  • the process recipes are combined so that the controller 70 can execute each step (each step) in the method of manufacturing a semiconductor device described later and obtain a predetermined result, and functions as a program.
  • the process recipe, control program, etc. are collectively referred to as a program.
  • the RAM 72 is configured as a memory area (work area) in which programs, data, and the like read by the CPU 71 are temporarily held.
  • the I / O ports 74 are the first to fourth temperature control mechanisms AC1 to AC4, the first to fourth transfer robots TH1 to TH4, MFC52a to 56a, valves 52b to 56b, pressure sensors 62, APC valves 63, and vacuum pump 64. , The heater 10, the elevating mechanism 44, and the like.
  • the CPU 71 is configured to read a control program from the storage device 73 and execute it, and to read a recipe or the like from the storage device 73 in response to an input of an operation command from the input / output device 82 or the like. Then, the CPU 71 performs the temperature adjustment operation of the first to fourth temperature control mechanisms AC1 to AC4 and the first to fourth transfer robots TH1 to TH4 via the I / O port 74 so as to follow the contents of the read recipe. Transfer operation, flow adjustment operation of various gases by MFC 52a to 56a, opening and closing operation of valves 52b to 56b, opening and closing operation of APC valve 63 and pressure adjustment operation based on pressure sensor 62 by APC valve 63, temperature adjustment operation of heater 10. It is configured to control the start and stop of the vacuum pump 64, the elevating operation of the boat 41 by the elevating mechanism unit 44, the accommodating operation of the wafer in the boat 41, and the like.
  • the controller 70 as described above may be configured as a dedicated computer or a general-purpose computer.
  • an external storage device for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as an MO, a USB memory (USB Flash Drive)
  • the controller 70 of the present disclosure can be configured by preparing a semiconductor memory (81) and installing a program on a general-purpose computer using the external storage device 81.
  • the means for supplying the program to the computer is not limited to the case of supplying the program via the external storage device 81.
  • a communication means such as the Internet or a dedicated line may be used, or information may be received from the host device via the receiving unit and the program may be supplied without going through the external storage device 81.
  • the storage device 73 in the controller 70 and the external storage device 81 that can be connected to the controller 70 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
  • recording medium When the term recording medium is used in the present specification, it may include only the storage device 73 alone, it may include only the external storage device 81 alone, or it may include both of them.
  • a substrate processing step a step of forming a titanium nitride (TiN) layer on a wafer (a film forming step), which is an example of a metal film, will be given as an example.
  • a film forming step the operation of each part constituting the processing chamber PM is controlled by the controller 70.
  • the film forming process performed in the first processing chamber PM11 will be described as an example.
  • the wafer to be processed is loaded into the boat 41 (wafer charge).
  • the plate 41a of the boat 41 is arranged at a position facing the substrate loading / unloading outlet 32, and in that state, the plate 41a is passed through the substrate loading / unloading outlet 32 by the first transfer robot TH1. Place the wafer on top. This is performed for each of the five-stage plates 41a while moving the vertical position of the boat 41 by the elevating mechanism portion 44. As a result, the boat 41 is loaded with five wafers.
  • the vacuum pump 64 is operated so that the pressure inside the processing unit 23 becomes a desired pressure (vacuum degree). At this time, the pressure in the processing unit 23 is measured by the pressure sensor 62, and the APC valve 63 is feedback-controlled based on the measured pressure information (pressure adjustment). The vacuum pump 64 is always kept in operation until at least the processing on the wafer is completed. Further, heating is performed by the heater 10 so that the temperature inside the processing unit 23 becomes a desired temperature. At this time, the amount of electricity supplied to the heater 10 is feedback-controlled based on the temperature information detected by the temperature sensor so that the inside of the processing unit 23 has a desired temperature distribution (temperature adjustment). The heating in the processing unit 23 by the heater 10 is continuously performed at least until the processing on the wafer is completed.
  • TiN layer forming step S140
  • the process proceeds to the TiN layer forming step (S140) as the film forming step.
  • S141 TiCl 4 gas
  • S142 TiCl 4 gas
  • S143 a step of removing residual gas
  • S143 NH 3 gas
  • S143 removing residual gas
  • TiCl 4 gas supply S141
  • the valve 52b is opened, and TiCl 4 gas, which is a raw material gas, is flowed through the gas supply pipe 52 and the gas supply pipe 51.
  • the flow rate of the TiCl 4 gas is adjusted by the MFC 52a, is supplied into the processing unit 23 from the gas supply hole 24a of the nozzle 24, and is exhausted from the exhaust pipe 61 through the exhaust flow path 25 and the pumping unit 26.
  • the TiCl 4 gas is supplied to the wafer loaded on the boat 41.
  • the valve 53b is opened in accordance with the supply of TiCl 4 gas, and an inert gas such as N 2 gas is allowed to flow in the gas supply pipe 53.
  • the flow rate of the N 2 gas flowing through the gas supply pipe 53 is adjusted by the MFC 53a , is supplied to the processing unit 23 together with the TiCl 4 gas, and is exhausted from the exhaust pipe 61.
  • the APC valve 63 is adjusted so that the pressure in the processing unit 23 is set to, for example, a pressure in the range of 0.1 to 6650 Pa.
  • the supply flow rate of the TiCl 4 gas controlled by the MFC 52a is, for example, a flow rate within the range of 0.1 to 2 slm.
  • the supply flow rate of the N 2 gas controlled by the MFC 53a is, for example, a flow rate within the range of 0.1 to 30 slm.
  • the time for supplying the TiCl 4 gas to the wafer is, for example, a time in the range of 0.01 to 20 seconds.
  • the heater 10 is set to a temperature such that the temperature of the wafer is in the range of, for example, 250 to 550 ° C.
  • the thickness of the wafer (surface base film) loaded on the boat 41 is, for example, less than one atomic layer to several atomic layers. Ti-containing layer is formed.
  • an inert gas such as N 2 gas is also supplied to the inside of the transfer chamber 33.
  • the valve 56b is opened to allow an inert gas such as N 2 gas to flow into the inert gas supply pipe 51.
  • the flow rate of the N 2 gas flowing through the inert gas supply pipe 51 is adjusted by the MFC 56a and supplied into the transfer chamber 33.
  • the supply of N 2 gas into the transfer chamber 33 shall be performed so that the gas pressure in the processing unit 23 ⁇ the gas pressure in the transfer chamber 33. Further, the total flow rate of the gas supplied into the processing unit 23 shall be less than the gas flow rate supplied into the transfer chamber 33.
  • the valve 52b is closed to stop the supply of TiCl 4 gas.
  • the open APC valve 63 of the exhaust pipe 61 evacuating the inside of the process unit 23 by the vacuum pump 64, processing unit TiCl 4 after contributing to not react or Ti-containing layer formed remaining in the 23 Exhaust the gas from the processing unit 23.
  • the valve 53b is kept open to maintain the supply of the N 2 gas into the processing unit 23.
  • the N 2 gas acts as a purge gas, and can enhance the effect of removing the unreacted or TiCl 4 gas remaining in the processing unit 23 after contributing to the formation of the Ti-containing layer from the processing unit 23.
  • the NH 3 gas is supplied into the processing unit 23 without being diluted with the N 2 gas, and is exhausted from the exhaust pipe 61.
  • the reaction gas NH 3 gas
  • the film formation rate of the TiN layer can be improved.
  • the APC valve 63 When flowing NH 3 gas, the APC valve 63 is adjusted so that the pressure in the processing unit 23 is, for example, in the range of 0.1 to 6650 Pa.
  • the supply flow rate of the NH 3 gas controlled by the MFC 54a is, for example, a flow rate in the range of 0.1 to 20 slm.
  • the time for supplying the NH 3 gas to the wafer is, for example, a time in the range of 0.01 to 30 seconds.
  • the heater 10 is set to the same temperature as in the TiCl 4 gas supply step.
  • the NH 3 gas undergoes a substitution reaction with at least a part of the Ti-containing layer formed on the wafer in the TiCl 4 gas supply step.
  • This substitution reaction by bonding with N contained in the Ti and NH 3 gas contained in the Ti-containing layer, on a wafer that has been charged into the boat 41, to TiN layer containing Ti and N are formed Become.
  • the transfer chamber 33 is supplied with an inert gas such as N 2 gas. Since the specific processing is the same as in the case of the TiCl 4 gas supply step (S141), the description here will be omitted.
  • N 2 gas acts as a purge gas, whereby the inside of the processing unit 23 is purged with the inert gas, and the gas and by-products remaining in the processing unit 23 are removed from the inside of the processing unit 23.
  • the same film forming process is performed in the first to fourth processing chambers PM12 to PM42, which are other processing chambers.
  • FIGS. 5 to 7 a wafer transfer process from the first standby chamber WM1 to the first to fourth processing chambers PM11, PM21, PM31, and PM41 will be described as an example.
  • the first to fourth processing chambers PM12, PM22, PM32, PM42, the first to fourth transport robots TH1 to TH4, and the atmospheric transport chamber LH are omitted.
  • the first to fourth temperature control mechanisms AC1 to AC4 are shown outside the standby chamber WM.
  • White circles shown in FIGS. 5 to 7 indicate processed wafers, and black circles indicate untreated wafers.
  • the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 70.
  • a step of transporting five unprocessed wafers held in the first waiting chamber WM1 to the fourth waiting chamber WM4 (hereinafter, may be referred to as “A step”) is performed. Will be done.
  • the step A will be described below.
  • the wafer transfer described below is performed according to the number of arms (2) of the transfer robot TH that transfers the wafer, and the transfer of 5 wafers is divided into several times of 1 to 2 wafers each. Is done.
  • Step A The wafer held in the first waiting chamber WM1 is held by the first transfer robot TH1 and conveyed to the second standby chamber WM2 via the first transfer chamber TM1. Subsequently, the second transfer robot TH2 holds the wafer and transfers it to the third standby chamber WM3 via the second transfer chamber TM2. Subsequently, this wafer is held by the third transfer robot TH3 and transferred to the fourth standby chamber WM4 via the third transfer chamber TM3. The above operation is repeated until all the five wafers held in the first waiting chamber WM1 are conveyed to the fourth waiting chamber WM4. Finally, the fourth transfer robot TH4 holds one of the five wafers held in the fourth standby chamber WM4 and transfers it to the fourth transfer chamber TM4 to complete the step A.
  • step A when all the five wafers held in the first waiting chamber WM1 are carried out, a step of transporting five new unprocessed wafers to the third waiting chamber WM3 (hereinafter, "step B"). ) Is started. Step B is performed in the same manner as step A.
  • step B when all the five wafers held in the first waiting chamber WM1 are carried out, a step of transporting five new unprocessed wafers to the second waiting chamber WM2 (hereinafter, "step C"). ) Is started. Step C is performed in the same manner as step A.
  • step C when all the five wafers held in the first waiting chamber WM1 are carried out, one of the five new unprocessed wafers is held by the first transfer robot TH1 and the first transfer robot TH1 is held. 1 Transfer to the transfer chamber TM1 (see FIGS. 5 (a) to 5 (b)).
  • Swap process In the swap step, first, one arm of the first to fourth transfer robots TH1 to TH4 holds the processed wafers processed in the first to fourth processing chambers PM11 to PM41, respectively. Subsequently, these processed wafers are exchanged with the unprocessed wafers held by the other arms of the first to fourth transfer robots TH1 to TH4 in the pre-swap process. That is, the processed wafers are transported to the first to fourth waiting chambers WM1 to WM4, and the unprocessed wafers are transported to the first to fourth processing chambers PM11 to PM41.
  • the four wafers held in the first to fourth waiting chambers WM1 to WM4 are simultaneously conveyed to the first to fourth processing chambers PM11 to PM41, respectively.
  • the term "simultaneous” here includes not only exactly the same timing but also almost the same timing and approximate timing. In the present specification, the terms “simultaneous” used hereinafter have the same meaning.
  • the above operation is repeated until all the wafers held in the waiting chamber WM and all the wafers processed in the processing chamber PM are swapped, and the swapping process is completed (FIGS. 6 (a) to 6 (FIGS. 6) to 6 (FIG. 6 (a) to (6)). b) See).
  • the processed wafer is transferred to the first waiting chamber WM1 by the transfer robot TH in the reverse procedure of the pre-swap process (see FIGS. 7 (a) to 7 (b)).
  • the wafer transfer step from the first waiting chamber WM1 to the first to fourth processing chambers PM12, PM22, PM32, PM42 is also performed in the same manner as described above.
  • the heating mechanism of the temperature control mechanism AC is operated to preheat the unprocessed wafer before it is carried into the processing chamber PM.
  • the heating mechanism of the temperature control mechanism AC provided in the transfer path of the wafer to the processing chamber PM is operated to preheat the wafer being conveyed, so that the wafer is carried into the processing chamber PM and then the film is formed.
  • the time until the processing is started can be shortened. As a result, work efficiency can be improved.
  • the heating mechanism of the temperature control mechanism AC is operated to make the temperatures of the four wafers at the same temperature when they are carried into the four processing chambers PM.
  • the four wafers held in the four transport chambers TM are simultaneously carried into the processing chamber PM (see FIG. 6), so that the four wafers at the time of carrying in are kept at the same temperature.
  • the processing times of the four processing chambers PM can be made uniform. As a result, further improvement in work efficiency can be realized.
  • the transport routes from the first standby chamber WM1 to the processing chamber PM of the four wafers processed in the first to fourth processing chambers PM11 to PM41 are different from each other.
  • the preheating (heating) time of the wafer differs depending on the transport path. Specifically, among the four wafers carried into the processing chamber PM, the wafer processed in the third processing chamber PM31 has the longest total heating time for the wafer processed in the fourth processing chamber PM41. The total heating time is shortened in the order of the wafer processed in the second processing chamber PM21 and the wafer processed in the first processing chamber PM11.
  • the temperature of the wafer immediately before being carried into the processing chamber PM is determined by the amount of heating energy of the heating mechanism (heating time of the heating mechanism x heating power of the heating mechanism). Therefore, if the heating time and heating power of the four temperature control mechanisms AC1 to AC4 are set to be the same, for example, the wafer processed in the fourth processing chamber PM41, which has the longest total heating time among the four wafers. Is the hottest, and the four wafers do not reach the same temperature. Therefore, the substrate processing apparatus 100 of the present disclosure changes the mode of temperature control of the temperature control mechanism AC according to the wafer transfer path, and equalizes the total heating energy amount for each wafer immediately before being carried into the processing chamber PM. By doing so, these wafers are kept at the same temperature. Specifically, any of the following control processes is performed.
  • the heating time of each of the four wafers in the waiting chamber WM is kept constant, and the heating power of the four heating mechanisms is controlled to be changed depending on the wafer.
  • the heating time of the first to fourth temperature control mechanisms AC1 to AC4 is T (constant), and the heating power of the first to fourth temperature control mechanisms AC1 to AC4 is P1, P2, P3, P4 (variables, respectively).
  • the amount of heating energy for the wafer processed in the fourth processing chamber PM41 is T ⁇ (P1 + P2 + P3 + P4).
  • the amount of heating energy for the wafer processed in the third processing chamber PM31 is T ⁇ (P1 + P2 + P3).
  • the amount of heating energy for the wafer processed in the second processing chamber PM21 is T ⁇ (P1 + P2).
  • the amount of heating energy for the wafer processed in the first processing chamber PM11 is T ⁇ P1. Since T is a constant, in order to equalize the amount of heating energy for each wafer, P1, P1 + P2, P1 + P2 + P3, which are the total heating powers for the wafers processed in the first to fourth processing chambers PM11 to PM41, respectively.
  • the values of P1 to P4 are set so that P1 + P2 + P3 + P4 are equal to each other. Since P1 to P4 are variables, different values may be set even if they have the same reference numerals.
  • the heating power P1 for the wafer processed in the first processing chamber PM11 and the heating for the wafer processed in the second processing chamber PM21 A different value is set from the power P1.
  • the value is set differently depending on the transfer destination (transfer path) of the wafer to be processed.
  • the controller 70 causes the wafer to be heated by the heating power of P1 for T time with respect to the heating mechanism of the first temperature control mechanism AC1. Instruct to heat.
  • the heating power of P1 is P1 of P1 + P2 + P3 + P4, which is the total heating power for the wafer processed in the fourth processing chamber PM41, and is set as the heating power generated by the heating mechanism of the first temperature control mechanism AC1. Is.
  • the T time is a time set as a time from when the wafer is carried into the first waiting chamber WM1 until when the wafer is carried out.
  • the controller 70 instructs the first transfer robot TH1 to transfer the wafer to the second standby chamber WM2.
  • the controller 70 causes the heating mechanism of the second temperature control mechanism AC2 to heat the wafer with the heating power of P2 for T hours. Instruct.
  • the heating power of P2 is P2 of P1 + P2 + P3 + P4, which is the total heating power for the wafer processed in the fourth processing chamber PM41, and is set as the heating power generated by the heating mechanism of the second temperature control mechanism AC2.
  • the T time is a time set as a time from when the wafer is carried into the second waiting chamber WM2 until when the wafer is carried out. (D) After the lapse of T time, the controller 70 instructs the second transfer robot TH2 to transfer the wafer to the third standby chamber WM3.
  • the controller 70 causes the heating mechanism of the third temperature control mechanism AC3 to heat the wafer with the heating power of P3 for T hours.
  • the heating power of P3 is P3 of P1 + P2 + P3 + P4, which is the total heating power for the wafer processed in the fourth processing chamber PM41, and is set as the heating power generated by the heating mechanism of the third temperature control mechanism AC3.
  • the T time is a time set as a time from when the wafer is carried into the third waiting chamber WM3 until when the wafer is carried out.
  • the controller 70 instructs the third transfer robot TH3 to transfer the wafer to the fourth standby chamber WM4.
  • the controller 70 causes the heating mechanism of the fourth temperature control mechanism AC4 to heat the wafer with the heating power of P4 for T hours. Instruct.
  • the heating power of P4 is P4 of P1 + P2 + P3 + P4, which is the total heating power for the wafer processed in the fourth processing chamber PM41, and is set as the heating power generated by the heating mechanism of the fourth temperature control mechanism AC4. Is.
  • the T time is a time set as a time from when the wafer is carried into the fourth waiting chamber WM4 until when it is carried out. Since the processing is performed in the procedures (a) to (g), the total heating power for the wafer processed in the fourth processing chamber PM41 is P1 + P2 + P3 + P4. P1 to P4 may be set to the same value, respectively, may be set to increase in the order of P1 to P4, or may be set to decrease in the order of P1 to P4. Similarly, since the wafers processed in the third processing chamber PM31 are processed in the procedures (a) to (e), the total heating power for the wafers processed in the third processing chamber PM31 is P1 + P2 + P3.
  • the total heating power for the wafers processed in the second processing chamber PM21 is P1 + P2. Since the wafer processed in the first processing chamber PM11 is subjected to the processing (a), the total heating power for the wafer processed in the first processing chamber PM11 is P1.
  • the temperatures of the four wafers when they are carried into the four processing chambers PM can be made the same temperature.
  • the heating time is increased by performing the above heat treatment to make the heating time of the wafer in each waiting chamber WM constant and changing the heating power of each temperature control mechanism AC according to the wafer transfer destination. Since adjustment is not required, the work can be performed quickly and the work efficiency can be improved.
  • the heating power of each heating mechanism for the four wafers is made constant, and the heating time in each standby chamber WM is controlled to be changed depending on the wafer.
  • the heating power of the first to fourth temperature control mechanisms AC1 to AC4 is P (constant), and the heating times of the first to fourth temperature control mechanisms AC1 to AC4 are T1, T2, T3, and T4 (variables, respectively).
  • the amount of heating energy for the wafer processed in the fourth processing chamber PM41 is (T1 + T2 + T3 + T4) ⁇ P.
  • the amount of heating energy for the wafer processed in the third processing chamber PM31 is (T1 + T2 + T3) ⁇ P.
  • the amount of heating energy for the wafer processed in the second processing chamber PM21 is (T1 + T2) ⁇ P.
  • the amount of heating energy for the wafer processed in the first processing chamber PM11 is T1 ⁇ P. Since P is a constant, in order to equalize the total amount of heating energy for each wafer, T1, 1 + T2, and 1 + T2 + T3, which are the total heating times for the wafers processed in the first to fourth processing chambers PM11 to PM41, respectively. And 1 + T2 + T3 + T4 are equal, and the values of T1 to T4 are set. Since T1 to T4 are variables, different values may be set even if they have the same reference numerals.
  • the heating time T1 of the heating mechanism of the same first temperature control mechanism AC1 is set, the heating time T1 for the wafer processed in the first processing chamber PM11 and the heating time for the wafer processed in the second processing chamber PM21.
  • a different value is set from T1.
  • the values are set differently depending on the transfer destination (transfer path) of the wafer to be processed even if the heating time T1 is the same with the same heating mechanism.
  • the specific control is performed in the same manner as in the first control mode described above, with the heating power as a constant and the heating time as variables. In this way, in the second control mode, the temperatures of the four wafers when they are carried into the four processing chambers PM can be made the same temperature.
  • the heating power of each heating mechanism for the wafer is made constant, and the heating time in each standby chamber WM is changed according to the transfer destination of the wafer, so that a complicated heating mechanism can be created. It becomes unnecessary and the structure of the heating mechanism can be simplified.
  • both the heating time in each waiting chamber WM for the four wafers and the heating power of the heating mechanism are controlled to be changed by the wafers.
  • the heating times of the first to fourth temperature control mechanisms AC1 to AC4 are T1, T2, T3, and T4 (variables, respectively)
  • the heating powers of the first to fourth temperature control mechanisms AC1 to AC4 are P1 and P2, respectively.
  • P3 and P4 variables respectively
  • the amount of heating energy for the wafer processed in the fourth processing chamber PM41 is (T1 ⁇ P1) + (T2 ⁇ P2) + (T3 ⁇ P3) + (T4 ⁇ P4). ).
  • the amount of heating energy for the wafer processed in the third processing chamber PM31 is (T1 ⁇ P1) + (T2 ⁇ P2) + (T3 ⁇ P3).
  • the amount of heating energy for the wafer processed in the second processing chamber PM21 is (T1 ⁇ P1) + (T2 ⁇ P2).
  • the amount of heating energy for the wafer processed in the first processing chamber PM11 is T1 ⁇ P1.
  • T1 ⁇ P1 and (T1 ⁇ P1) + which are the total heating energy amounts for the wafers processed in the first to fourth processing chambers PM11 to PM41, respectively.
  • T1 to T4 and P1 to P4 are set so that are equal to each other. Since T1 to T4 and P1 to P4 are variables, different values may be set even if they have the same reference numerals. For example, even if the heating power P1 is generated by the heating mechanism of the same first temperature control mechanism AC1, the heating power P1 for the wafer processed in the first processing chamber PM11 and the heating for the wafer processed in the second processing chamber PM21 A different value is set from the power P1.
  • the value is set differently depending on the transfer destination (transfer path) of the wafer to be processed.
  • the heating time T1 of the heating mechanism of the same first temperature control mechanism AC1 is set, the heating time T1 for the wafer processed in the first processing chamber PM11 and the wafer processed in the second processing chamber PM21.
  • a different value is set from the heating time T1 with respect to.
  • the values are set differently depending on the transfer destination (transfer path) of the wafer to be processed even if the heating time T1 is the same with the same heating mechanism.
  • the specific control is performed in the same manner as in the first control mode described above, with both the heating power and the heating time as variables.
  • the temperatures of the four wafers when they are carried into the four processing chambers PM can be made the same temperature.
  • the combination of parts can be combined. Since the degree of freedom is increased, a highly versatile device can be used.
  • the cooling mechanism of the temperature control mechanism AC is operated to make the temperature of the processed wafer when it is carried out from the first standby chamber WM1 the same temperature. By doing so, it is possible to simultaneously perform the next processing on a plurality of wafers carried out from the first waiting chamber WM1. As a result, the work efficiency of the subsequent processing can be improved.
  • the transport routes of the wafers carried out from the four processing chambers PM to the first standby chamber WM1 are different from each other.
  • the cooling time of the wafer differs depending on the transport path. Specifically, of the four wafers carried out from the processing chamber PM and carried into the first waiting chamber WM1, the total cooling time for the wafers carried out from the fourth processing chamber PM41 is the longest, and the third wafer. The total cooling time is shortened in the order of the wafer carried out from the processing chamber PM31, the wafer carried out from the second processing chamber PM21, and the wafer carried out from the first processing chamber PM11.
  • the temperature of the wafer immediately before being carried out from the first standby chamber WM1 is determined by the amount of cooling energy of the cooling mechanism (cooling time of the cooling mechanism ⁇ cooling power of the cooling mechanism). Therefore, if the cooling time and cooling power of the four temperature control mechanisms AC1 to AC4 are set to be the same, for example, the wafer carried out from the fourth processing chamber PM41, which has the longest total cooling time among the four wafers. Is the coldest, and the four wafers do not reach the same temperature. Therefore, the substrate processing apparatus 100 of the present disclosure changes the mode of temperature control of the temperature control mechanism AC according to the wafer transfer path, and the total cooling energy amount for each wafer immediately before being carried out from the first standby chamber WM1. Are equal so that these wafers are at the same temperature. Since the specific control process is performed in the same manner as the first to third control modes of temperature control by the heating mechanism described above, detailed description thereof will be omitted.
  • “same temperature” includes not only exactly the same temperature but also almost the same temperature and an approximate temperature.
  • the controller 70 controls the temperature control mechanism AC so as to change the mode of temperature control of the standby chamber WM according to the wafer transfer path, for example, the wafer passing through different transfer paths
  • the temperature can be adjusted at a predetermined timing. As described above, the temperature of the wafer can be freely adjusted, and as a result, the work efficiency can be improved.
  • the unprocessed wafer being transferred is preheated by the heating mechanism of the temperature control mechanism AC provided in the wafer transfer path to the processing chamber PM, so that the wafer is carried into the processing chamber PM. It is possible to shorten the time from when the film forming process is started. As a result, work efficiency can be improved.
  • the processed wafer being transferred is cooled by the cooling mechanism of the temperature control mechanism AC provided in the transfer path of the wafer carried out from the processing chamber PM, so that the process until the next processing is started.
  • the waiting time can be shortened. As a result, work efficiency can be improved.
  • the heating mechanism of the temperature control mechanism AC is controlled according to the transfer path of the wafers so that the temperatures of the four wafers when they are carried into the four processing chambers PM are made the same temperature, and further, these Wafers are simultaneously carried into the processing chamber PM. By doing so, the processing times of the four processing chambers PM can be made uniform, and further improvement in work efficiency can be realized.
  • the cooling mechanism of the temperature control mechanism AC is controlled according to the wafer transfer path so that the temperature of the processed wafer when it is carried out from the first standby chamber WM1 is the same temperature.
  • the next processing can be performed simultaneously on the plurality of wafers carried out from the first waiting chamber WM1, so that the work efficiency of the subsequent processing can be improved.
  • the temperature control mechanism AC having both a heating mechanism and a cooling mechanism has been mentioned as an example, but the present disclosure is not limited to this, and only one of the heating mechanism and the cooling mechanism is provided.
  • the temperature control mechanism AC may be used.
  • the substrate processing apparatus 100 provided with four each of the transport chamber TM and the standby chamber WM is given as an example, but the present disclosure is not limited to this, and the transport chamber TM and the standby chamber are not limited to this. It may have three or less WMs, or five or more WMs, respectively.
  • the substrate processing apparatus 100 in which the processing chambers PM are provided on both side surfaces of the transport chamber TM is given as an example, but the present disclosure is not limited to this, and one side surface of the transport chamber TM is used.
  • the processing chamber PM may be provided only in the above.
  • the unprocessed wafer carried into the processing chamber PM is heated by all the heating mechanisms provided in the transport path as an example.
  • the heating is not limited to this, and some heating mechanisms among the plurality of heating mechanisms may not be heated.
  • the processed wafer carried out from the processing chamber PM is cooled by all the cooling mechanisms provided in the transport path as an example.
  • the cooling is not limited to this, and some cooling mechanisms among the plurality of cooling mechanisms may not be cooled.
  • the first processing gas first metal-containing gas, raw material gas
  • the second processing gas is used.
  • the processing gas used for the film forming treatment is not limited to TiCl 4 gas, NH 3 gas, or the like, and other types of thin films may be formed using other types of gas.
  • the first element may be various elements such as Si, Zr, and Hf instead of Ti.
  • the second element may be, for example, O or the like instead of N.
  • the present disclosure can be applied to film formation treatments other than the thin films exemplified in the above disclosure, in addition to the thin film formation mentioned in the above disclosure as an example.
  • the specific content of the substrate treatment does not matter, and when not only the film formation treatment but also other substrate treatments such as heat treatment (annealing treatment), plasma treatment, diffusion treatment, oxidation treatment, nitriding treatment, and lithography treatment are performed. Can also be applied.
  • Atmospheric transport chamber TM1 to TM4 ... 1st to 4th transport chambers, TH1 to TH4 ... 1st to 4th transport robots, WM1 to WM4 ... 1st to 4th standby chambers, AC1 to AC4 ... 1st to 1st 4 temperature control mechanism, PM11 to PM42 ... 1st to 4th processing chambers, 70 ... controller, 100 ... substrate processing device

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