WO2021039955A1 - 光電変換素子、撮像素子、および撮像システム - Google Patents

光電変換素子、撮像素子、および撮像システム Download PDF

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Publication number
WO2021039955A1
WO2021039955A1 PCT/JP2020/032572 JP2020032572W WO2021039955A1 WO 2021039955 A1 WO2021039955 A1 WO 2021039955A1 JP 2020032572 W JP2020032572 W JP 2020032572W WO 2021039955 A1 WO2021039955 A1 WO 2021039955A1
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WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion element
phase adjusting
light
layer
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Ceased
Application number
PCT/JP2020/032572
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English (en)
French (fr)
Japanese (ja)
Inventor
友洋 中込
優 大久保
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Toppan Inc
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Toppan Printing Co Ltd
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Priority to JP2021543033A priority Critical patent/JP7647559B2/ja
Publication of WO2021039955A1 publication Critical patent/WO2021039955A1/ja
Priority to US17/682,195 priority patent/US12255216B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Definitions

  • the present invention relates to a photoelectric conversion element, an image pickup device, and an image pickup system.
  • This application claims priority based on Japanese Patent Application No. 2019-157644 filed in Japan on August 30, 2019 and Japanese Patent Application No. 2019-157645 filed in Japan on August 30, 2019. Is used here.
  • Photoelectric conversion elements are used in various fields.
  • An imaging system capable of measuring a distance is known as one of the fields in which a photoelectric conversion element is used.
  • Such an imaging system generally includes a light source that generates light to irradiate the subject and a photoelectric conversion element.
  • the photoelectric conversion element functions as an image sensor that captures the reflected light from the subject.
  • the photoelectric conversion element has a silicon substrate on which a charge generation region is formed.
  • One or more dielectric layers are formed on the surface side of the silicon substrate, and signal wiring is arranged in the dielectric layer. That is, the photoelectric conversion element usually has a dielectric multilayer film structure.
  • the interference effect of the multilayer film acts on the incident light, and the reflectance vibrates in the wavelength region.
  • the amplitude and phase of the reflectance vibration change in a complicated manner depending on the film thickness and the refractive index of each layer constituting the multilayer film. Further, the thickness and composition of the dielectric layer in the element plane vary, and the center wavelength of the light emitted from the light source also varies.
  • the large amplitude of the reflectance vibration causes a large variation in the sensitivity of each of the plurality of pixels constituting the photoelectric conversion element. Since this variation ultimately affects the distance measurement accuracy of the imaging system, it is preferable that the amplitude of the reflectance vibration is as small as possible. However, as described above, since there are many factors that affect the amplitude and phase of the reflectance vibration, its control is not easy.
  • the photoelectric conversion element is a photoelectric conversion element in which the emitted light having a predetermined wavelength band emitted from a light source receives the reflected light reflected by the subject, and is a substrate having a charge generation region.
  • a dielectric layer formed on the substrate and a phase adjusting layer arranged on the dielectric layer and having an upper surface and a lower surface are provided.
  • the photoelectric is used.
  • the optical path length from the time the reflected light passes through the first surface to the second surface is the reflected light on the first surface.
  • the phase adjusting layer is configured so as to be different depending on the incident position of the light.
  • the maximum value of the optical path length difference of the reflected light transmitted through the phase adjusting layer may be 1/4 or more of the average wavelength of the emitted light.
  • the phase adjustment layer is a phase adjustment lens having an aspect ratio h / d, which is the ratio of the bottom diameter d to the height h, of 0.35 or more and 1.2 or less. There may be.
  • the phase adjusting lens may cover 75% or more of the substrate in a plan view of the photoelectric conversion element.
  • the phase adjusting layer may have fine irregularities.
  • the phase adjusting layer may have a plurality of scattered particles.
  • the imaging device includes a plurality of photoelectric conversion elements according to the above-described aspect, and the photoelectric conversion elements are two-dimensionally arranged.
  • the imaging element according to one aspect of the present invention includes a plurality of photoelectric conversion elements according to the above-described aspect, and the photoelectric conversion elements are two-dimensionally arranged.
  • the length of the side of the substrate is long.
  • the diameter of the phase adjusting lens is larger than that of the lens, and the phase adjusting lens has a shape in which a part of the phase adjusting lens protruding to the outside of the side of the substrate is removed.
  • the image pickup system includes a light source that emits emitted light having a predetermined wavelength band, and an image pickup device according to the above-described aspect.
  • the imaging system includes a light source that emits emitted light having a predetermined wavelength band, and a photoelectric conversion element according to the above-described aspect.
  • the vibration of the reflectance of the incident light is reduced.
  • FIG. 1 is a schematic cross-sectional view showing a photoelectric conversion element 1 according to the present embodiment.
  • the photoelectric conversion element 1 includes a substrate 10 formed of a semiconductor, a dielectric layer 20 formed on the substrate 10, and a phase adjusting layer 30 formed on the dielectric layer 20.
  • the substrate 10 is made of, for example, silicon.
  • the substrate 10 has a charge generation region 11 and a floating diffusion FD.
  • the charge generation region 11 has a three-dimensional shape extending from the first surface 10a of the substrate 10 in the surface direction of the first surface 10a and the thickness direction of the substrate 10.
  • the charge generation region 11 is provided with a first conductive type (P + type) semiconductor region and a second conductive type (N type) semiconductor region.
  • a photodiode having a configuration in which electrons corresponding to the amount of light (light amount) incident on the charge generation region 11 are generated and accumulated as signal charges are formed.
  • the structure of the charge generation region 11 is known and can be formed, for example, by injecting an impurity (dopant) into the substrate 10.
  • the dielectric layer 20 has a low refractive index layer 21 in contact with the first surface 10a and a high refractive index layer 22 located on the low refractive index layer 21.
  • a wiring layer W for connecting the photoelectric conversion element 1 to an external circuit or the like is arranged in the dielectric layer 20, and a gate electrode G is formed in a part of the wiring layer W. When a potential is applied to the gate electrode G, the electrons generated in the charge generation region 11 are transferred to the floating diffusion FD.
  • the basic structures of the gate electrode G and the floating diffusion FD are known.
  • the phase adjusting layer 30 has an upper surface 30T (front surface) and a lower surface 30B, and is formed on the high refractive index layer 22.
  • the upper surface 30T is an incident surface on which light is incident.
  • the lower surface 30B is a contact surface where the phase adjusting layer 30 and the high refractive index layer 22 come into contact with each other.
  • the phase adjusting layer 30 has a structure in which scattered particles 32 are dispersedly arranged in a transparent base resin 31.
  • the phase adjusting layer 30 has a fine uneven shape on the upper surface 30T.
  • the scattered particles 32 either transparent particles or opaque particles can be used, but when opaque particles are used, if the ratio of the scattered particles 32 to the phase adjusting layer 30 is too large, the incident light is emitted.
  • the refractive index is different from that of the base resin 31.
  • silica particles can be exemplified.
  • opaque scattered particles include titania particles.
  • the plane in contact with the upper surface 30T of the phase adjusting layer 30 and parallel to the substrate 10 is designated as the first surface PL1
  • the lower surface 30B of the phase adjusting layer 30 is designated as the second surface PL2.
  • the optical path length from the time the reflected light RL passes through the first surface PL1 to the second surface PL2 is the first surface PL1.
  • the phase adjusting layer 30 is configured so as to differ depending on the incident position of the reflected light RL above (the position indicated by the reference numeral RL in FIG. 1).
  • the behavior of the incident light in the photoelectric conversion element 1 of the present embodiment configured as described above will be described.
  • the light incident on the photoelectric conversion element 1 is incident on the phase adjusting layer 30 before reaching the dielectric layer.
  • a part of the light incident on the phase adjusting layer 30 hits the scattered particles 32 and changes the optical path in various directions, resulting in light having various optical path lengths.
  • a phase difference is generated between the light that hits the scattered particles 32 and the light that does not hit the scattered particles 32 due to the change in the optical path length.
  • a phase difference is generated between the lights that hit the scattered particles 32.
  • the light emitted from the phase adjusting layer 30 is incident on the high refractive index layer 22 at various angles of incidence, and the optical path length changes depending on the angle of incidence to generate a phase difference.
  • the light transmitted through the phase adjusting layer 30 and incident on the high refractive index layer 22 includes a plurality of types of light having different optical path lengths as described above. Therefore, a part of the vibration is canceled by the phase difference, and the amplitude is reduced.
  • the amplitude of the interference vibration in the dielectric layer 20 is reduced as compared with the case where the phase adjusting layer 30 is not provided. Therefore, the amplitude of the interference vibration can be reduced extremely easily without considering the film thickness and material of the low refractive index layer 21 and the high refractive index layer 22.
  • the sensitivity variation for each product can be suppressed, and in the case of an imaging system having a plurality of pixels, the sensitivity variation for each pixel can be suppressed.
  • the configuration of the present embodiment including the phase adjusting layer 30 contributes to the stabilization of the distance measurement accuracy.
  • the phase adjustment layer 30 can reduce the amplitude of the interference vibration depends on the wavelength of the incident light. That is, the interference vibrations of light that are out of phase by 1/2 cycle cancel each other out.
  • the phase adjustment layer 30 may be designed so that the light passing through the phase adjustment layer 30 includes the light having the optical path length increased by 1/4 wavelength or more. ..
  • the photoelectric conversion element 1 of the present embodiment is applied to an imaging system using light having a wavelength in the near infrared region, it has passed through the phase adjusting layer 30 according to the specific wavelength of the light emitted from the light source.
  • the phase adjustment layer 30 may be designed so that the light includes light having an increased optical path length of about 190 nm to 350 nm or more.
  • the scattering by the scattered particles 32 is forward scattering in order to increase the transmittance.
  • the forward scattering may be geometric scattering or Mie scattering, but in either case, as the phase adjustment layer 30 becomes thicker, the light scattered outside the pixel region increases. Therefore, from the viewpoint of designing the phase adjusting layer 30 to be thin, the particle size of the scattered particles 32 is preferably small, for example, preferably 3 ⁇ m or less, and more preferably 1.5 ⁇ m or less.
  • the particle size of the scattered particles 32 is preferably 10 nm or more, and more preferably 0.1 ⁇ m or more.
  • FIG. 2 is a schematic cross-sectional view showing the photoelectric conversion element 201 according to the present embodiment.
  • the phase adjusting layer 230 formed on the dielectric layer 20 does not contain scattered particles and has fine irregularities on the surface 230a. That is, although the material of the phase adjusting layer 230 is uniform, the thickness differs for each part due to fine irregularities, and the phase adjusting layer 230 has a plurality of types of thickness dimensions. Therefore, in the phase adjusting layer 230, the difference between the thickness dimension Th1 of the thinnest portion and the thickest portion Th2 is set to 1/4 or more of the wavelength of the light emitted from the light source. Similarly, the amplitude of the interference vibration can be reduced very easily.
  • the structure of fine irregularities can be appropriately set.
  • a structure having a plurality of portions having a constant thickness and having a step may be provided as in the phase adjusting layer 230, or the thickness may be continuous in a predetermined cross section as in the phase adjusting layer 230A shown in FIG. It may be a structure that changes smoothly and has no step. In the case of a structure having no step, the thickness may change continuously and linearly in a predetermined cross section as in the phase adjusting layer 230B shown in FIG. Further, there is no particular limitation on the structure in which the thickness increases or decreases. Therefore, the phase adjustment layer 230C shown in FIG.
  • the thickness may be increased or decreased so as to be line-symmetrical in a predetermined cross section of the photoelectric conversion element 1.
  • the inventor has found the above-mentioned effect of reducing the amplitude (hereinafter referred to as the amplitude reducing effect) by arranging the phase adjusting layer 230 on the dielectric layer 20, and has conducted a study for enhancing the effect by simulation. It was. The contents are shown below.
  • FIG. 8 is a graph showing a change in the amount of light absorbed by the photoelectric conversion element 201 when the phase adjusting layer 230 is arranged on the dielectric layer 20 by increasing the thickness by 0.2 ⁇ m.
  • the photoelectric conversion element 201 is a square (diagonal 23.8 ⁇ m) having a side length of 16.8 ⁇ m.
  • FIG. 8 shows the amount of light absorbed in the range from the first surface 10a side of the substrate 10 to a depth of 13 ⁇ m.
  • FIG. 8 also shows that the peak value of the interference amplitude of the light absorption amount does not change much even if only the thickness of the phase adjusting layer 230 changes. This is because the optical path length in the dielectric layer 20 does not change even if only the thickness of the phase adjusting layer 230 changes. It is effective to change the optical path length in the dielectric layer 20 in order to suppress the peak portion of the interference amplitude.
  • a plurality of types of incident angles of light with respect to the dielectric layer may be generated. Specifically, it is preferable to continuously change the thickness of the phase adjusting layer as in the above-mentioned phase adjusting layers 230A and 230B.
  • the interference suppression effect due to the change in thickness and the interference suppression due to the change in the optical path length in the dielectric layer 20 are suppressed. It can exert both the effect.
  • the angle of the light incident on the dielectric layer 20 can be deflected.
  • the period of the uneven structure is 5 ⁇ m or less, preferably 3 ⁇ m or less.
  • the photoelectric conversion element according to each embodiment of the present embodiment can be used alone, but a plurality of photoelectric conversion elements may be arranged in a two-dimensional matrix to form an image pickup element.
  • FIG. 10 shows an example of the image sensor as a block diagram.
  • the image pickup element 40 has a light receiving region 41 in which a plurality of photoelectric conversion elements 1 are two-dimensionally arranged.
  • the image pickup device 40 includes a control circuit 50, a vertical drive circuit 60, a horizontal drive circuit 70, an AD conversion circuit 80, and an output circuit 90.
  • This structure is an example of an image pickup device, and specifications and the like are taken into consideration.
  • Various known configurations may be appropriately combined. It goes without saying that the photoelectric conversion element 201 may be used instead of the photoelectric conversion element 1.
  • the number and arrangement of photoelectric conversion elements arranged in the light receiving region 41 can also be appropriately set.
  • the plurality of photoelectric conversion elements may be two-dimensionally arranged without gaps. At that time, a plurality of photoelectric conversion elements arranged two-dimensionally on a single semiconductor wafer may be formed.
  • FIG. 11 schematically shows an example of an imaging system to which the photoelectric conversion element of the present embodiment is applied.
  • the imaging system 100 shown in FIG. 11 includes a light emitting unit 110 having a light source 101 and a light receiving unit 120 having an imaging sensor 121.
  • the light source 101 emits emitted light L1 having a predetermined wavelength and wavelength band (wavelength profile) toward the subject O.
  • the reflected light L2 generated by the emitted light L1 being reflected by the subject O is incident on the image sensor 121 of the light receiving unit 120.
  • the image pickup sensor 121 either a single photoelectric conversion element or an image pickup element 40 including a plurality of photoelectric conversion elements can be used.
  • the phase adjustment layer in the image pickup sensor 121 based on the wavelength band of the emitted light L1, it is possible to obtain an image pickup system with little variation in distance measurement accuracy.
  • the phase adjusting layer in the present invention is not limited to the above-described embodiment.
  • the phase adjusting layer 330 of the modified example shown in FIG. 12 has a first region 331, a second region 332, a third region 333, and a fourth region 334 having different refractive indexes. Since the light transmitted through the regions having different refractive indexes has a substantially different optical path length, the refractive index of each region is appropriate based on the light source wavelength and the like even if the thickness of all the regions in the phase adjustment layer 330 is the same. By setting to, the amplitude reduction effect is achieved.
  • the number and arrangement of each region can be set as appropriate. For example, they may be arranged so that the refractive index gradually increases or decreases, or they may be arranged irregularly as shown in FIG.
  • the amplitude reduction effect can be enhanced by making the thickness of each region 331 to 334 different or by continuously changing the thickness.
  • the regions 331 to 334 may be arranged side by side in the thickness direction of the phase adjustment layer.
  • the scattered particles 32 may be included in the phase adjusting layer 230 and the phase adjusting layer 330.
  • FIG. 15 is a schematic cross-sectional view showing the photoelectric conversion element 301 according to the present embodiment.
  • the photoelectric conversion element 301 includes a substrate 10 formed of a semiconductor, a dielectric layer 20 formed on the substrate 10, and a phase adjusting lens 30L formed on the dielectric layer 20.
  • the phase adjustment lens 30L corresponds to the phase adjustment layer of the present invention.
  • the phase adjusting lens 30L is formed on the high refractive index layer 22.
  • the aspect ratio (h / d) which is the ratio of the bottom surface diameter d and the thickness h of the phase adjusting lens 30L, is 0.6 or more and 1.0 or less.
  • the microlens itself having such an aspect ratio is not known, it can be manufactured by a known microlens technique by appropriately setting appropriate manufacturing conditions.
  • the shape of the phase adjusting lens 30L in a plan view is a quadrangle due to the arrangement of the phase adjusting lens 30L or the like, it is considered that the diagonal length of the quadrangle is shorter than the diameter of the phase adjusting lens 30L having a circular shape.
  • the curved surface above the phase adjusting lens 30L is extended to the bottom surface of the phase adjusting lens 30L, and the diameter of the shape of the phase adjusting lens 30L is defined as the bottom surface diameter d.
  • the behavior of the incident light in the photoelectric conversion element 301 of the present embodiment configured as described above will be described.
  • the light incident on the photoelectric conversion element 301 is incident on the lens surface 30a of the phase adjusting lens 30L at various incident angles before reaching the dielectric layer 20, and the optical path length changes.
  • the light is incident on the high refractive index layer 22 in a state where a phase difference is generated between the light incident on the phase adjusting lens 30L.
  • the dielectric layer 20 interference occurs due to the multi-layer structure of the low refractive index layer 21 and the high refractive index layer 22, and the reflectance vibrates.
  • the light incident on the high refractive index layer 22 from the phase adjusting lens 30L includes light having various phases. Therefore, a part of the vibration is canceled and the amplitude is reduced.
  • the amplitude of the interference vibration in the dielectric layer 20 is reduced as compared with the case where the phase adjusting lens 30L is not provided. Therefore, the amplitude of the interference vibration can be reduced extremely easily without considering the film thickness and material of the low refractive index layer 21 and the high refractive index layer 22. As a result, in the case of an imaging system having a single pixel, the sensitivity variation for each product can be suppressed, and in the case of an imaging system having a plurality of pixels, the sensitivity variation for each pixel can be suppressed. In any case, the configuration of the present embodiment provided with the phase adjusting lens 30L contributes to the stabilization of the distance measurement accuracy.
  • the phase adjustment lens 30L can reduce the amplitude of the interference vibration depends on the wavelength of the incident light. That is, the interference vibrations of light that are out of phase by 1/2 cycle cancel each other out.
  • the phase adjustment lens 30L may be designed so that the light passing through the phase adjustment lens 30L includes the light having the optical path length increased by 1/4 wavelength or more. ..
  • the photoelectric conversion element 301 of the present embodiment is applied to an imaging system using light having a wavelength in the near infrared region, the light passes through the phase adjusting lens 30L according to the specific wavelength of the light emitted from the light source.
  • the lens shape of the phase adjusting lens 30L may be designed so that the light includes light having an increased optical path length of about 190 nm to 350 nm or more.
  • the inventor found the above-mentioned amplitude reduction effect by arranging the phase adjustment lens 30L on the dielectric layer 20, and conducted a study to enhance the effect by simulation. The contents are shown below.
  • FIG. 16 shows the dimensions of the photoelectric conversion element 301 in a plan view under simulation conditions.
  • the shape and dimensions of the photoelectric conversion element 301 in a plan view were defined as a square (diagonal length 23.8 ⁇ m) having a side length of 16.8 ⁇ m.
  • the bottom diameter d of the phase adjusting lens 30L was set to 20.0 ⁇ m.
  • the phase adjustment lens 30L was arranged so that the optical axis of the phase adjustment lens 30L and the center of the photoelectric conversion element 301 in a plan view coincide with each other. In this state, about 95% of the substrate 10 was covered with the phase adjusting lens 30L.
  • the wavelength of the light incident on the photoelectric conversion element 301 was set to 800 to 900 nm, the height h of the phase adjusting lens 30L was changed, and the change in the amplitude reduction effect was examined.
  • the amount of light absorbed in the range from the first surface 10a side of the substrate 10 to a depth of 13 ⁇ m was used.
  • the horizontal axis shows the aspect ratio of the phase adjusting lens 30L
  • the vertical axis shows the ratio of the amplitude of the incident light to the average wavelength.
  • the amplitude reduction effect was further enhanced, but it can be seen that the increase in the amplitude reduction effect became slower when the aspect ratio exceeded 0.6, which is about 1/3 of the amplitude reduction effect.
  • the aspect ratio of the phase adjusting lens 30L increases, the thickness of the phase adjusting lens 30L and the tangential angle range of the lens surface that increases the optical path length of the incident light due to light refraction increase, thereby canceling the interference and causing interference.
  • the effect of reducing the amplitude is enhanced.
  • the aspect ratio exceeds 0.5, the thickness of the phase adjusting lens 30L increases, but the tangential angle range of the lens surface does not increase any more.
  • the proportion of the high angle component in the tangential angle range of the lens surface of the phase adjustment lens 30L with an aspect ratio of 0.5 is small.
  • the high angle component of the tangent line of the lens surface increases, so that the effect of reducing the amplitude of interference is enhanced.
  • the aspect ratio exceeds 0.6, the tangential high angle component of the lens surface begins to become excessive, and the effect of reducing the amplitude of interference begins to become dull.
  • the aspect ratio of the phase adjustment lens 30L is preferably 0.35 or more and 1.2 or less, and 0.6 or more and 1.0 or less. It was considered more preferable.
  • the coverage of the phase adjusting lens 30L (the ratio of the phase adjusting lens covering the substrate in the plan view of the photoelectric conversion element) was set to about 95%.
  • the effect of the present invention can be obtained when the coverage of the phase adjusting lens 30L is at least 75% or more. It is more desirable to completely cover the charge generation region 11 when the photoelectric conversion element 301 is viewed in a plan view.
  • the area occupied by the charge generation region 11 on the substrate 10 varies depending on the layout design of the pixels constituting the photoelectric conversion element 301, but is generally about 30% to 50% in the plan view of the photoelectric conversion element 301.
  • the plan view shape of the charge generation region 11 various shapes such as a square, a rectangle, and a trapezoid can be adopted depending on the layout design of the pixels. Therefore, it is desirable that the coverage of the phase adjusting lens 30L is 75% or more.
  • phase adjusting lens 30L having a circular bottom surface is coated on a square photoelectric conversion element 301 in a plan view with a coverage of about 75%
  • the phase adjusting lens 30L is coated on the square photoelectric conversion element 301.
  • the phase adjusting lens 30L can cover the entire charge generation region 11 regardless of the area and shape of the charge generation region 11.
  • the photoelectric conversion element 301 according to the present embodiment can be used alone, but a plurality of photoelectric conversion elements 301 may be arranged in a two-dimensional matrix to form an image pickup element.
  • the image sensor 40 may have a light receiving region 41 in which a plurality of photoelectric conversion elements 301 are two-dimensionally arranged.
  • each phase adjusting lens 30L of the photoelectric conversion element 301 can be appropriately set.
  • the diameter d of the phase adjusting lens 30L may be larger than the length of one side of the substrate 10 in a plan view.
  • a part of the peripheral edge of the phase adjusting lens 30L is removed according to the shape of the substrate 10, that is, a part of the phase adjusting lens 30L protruding to the outside of the side of the substrate 10 in a plan view is removed.
  • a phase adjusting lens 30L is formed so as to be removed.
  • the plurality of photoelectric conversion elements 301 can be two-dimensionally arranged without gaps without the adjacent phase adjusting lenses 30L interfering with each other. Further, a plurality of photoelectric conversion elements arranged two-dimensionally on a single semiconductor wafer may be formed.
  • an image pickup sensor 121 including a plurality of photoelectric conversion elements 301 may be applied to the image pickup system.
  • the image sensor 121 either a single photoelectric conversion element 301 or an image pickup element 40 including a plurality of photoelectric conversion elements 301 can be used.
  • the phase adjustment lens 30L in the image pickup sensor 121 based on the wavelength band of the emitted light L1, it is possible to obtain an image pickup system with little variation in distance measurement accuracy.
  • the structure of the phase adjusting layer 230 described in the second embodiment may be applied to the phase adjusting lens 30L according to the third embodiment.
  • a structure in which fine irregularities are formed on the surface (lens surface) of the phase adjusting lens 30L can be obtained.
  • Photoelectric conversion element 10 Substrate 11 Charge generation region 20 Dielectric layer 30, 230, 230A, 230B, 230C, 230D, 230E, 330, 330A, 330B Phase adjustment layer 30L Phase adjustment lens (phase adjustment layer) 30T Upper surface 30B Lower surface 32 Scattered particles 40 Image sensor 100 Image sensor 101 Light source L1 Emission light RL, L2 Reflected light PL1 First surface PL2 Second surface

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
PCT/JP2020/032572 2019-08-30 2020-08-28 光電変換素子、撮像素子、および撮像システム Ceased WO2021039955A1 (ja)

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JP2021543033A JP7647559B2 (ja) 2019-08-30 2020-08-28 光電変換素子、撮像素子、および撮像システム
US17/682,195 US12255216B2 (en) 2019-08-30 2022-02-28 Photoelectric conversion device, imaging device, and imaging system

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JP2019-157645 2019-08-30
JP2019-157644 2019-08-30
JP2019157644 2019-08-30
JP2019157645 2019-08-30

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