TWI902704B - 光電轉換元件、攝像元件及攝像系統 - Google Patents
光電轉換元件、攝像元件及攝像系統Info
- Publication number
- TWI902704B TWI902704B TW109129495A TW109129495A TWI902704B TW I902704 B TWI902704 B TW I902704B TW 109129495 A TW109129495 A TW 109129495A TW 109129495 A TW109129495 A TW 109129495A TW I902704 B TWI902704 B TW I902704B
- Authority
- TW
- Taiwan
- Prior art keywords
- photoelectric conversion
- phase adjustment
- conversion element
- light
- adjustment layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-157645 | 2019-08-30 | ||
| JP2019-157644 | 2019-08-30 | ||
| JP2019157644 | 2019-08-30 | ||
| JP2019157645 | 2019-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202127645A TW202127645A (zh) | 2021-07-16 |
| TWI902704B true TWI902704B (zh) | 2025-11-01 |
Family
ID=74685121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109129495A TWI902704B (zh) | 2019-08-30 | 2020-08-28 | 光電轉換元件、攝像元件及攝像系統 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12255216B2 (https=) |
| JP (1) | JP7647559B2 (https=) |
| TW (1) | TWI902704B (https=) |
| WO (1) | WO2021039955A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112020006665T5 (de) * | 2020-02-03 | 2022-12-15 | Sony Semiconductor Solutions Corporation | Elektronische vorrichtung |
| JP7624806B2 (ja) * | 2020-04-03 | 2025-01-31 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| US20230082228A1 (en) * | 2021-09-15 | 2023-03-16 | University Of Central Florida Research Foundation, Inc. | Ir photodetector with graphene and phase change layers and related methods |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200642116A (en) * | 2005-05-18 | 2006-12-01 | Mitsubishi Electric Corp | Avalanch photo diode |
| WO2018138851A1 (ja) * | 2017-01-26 | 2018-08-02 | 国立大学法人東北大学 | 固体光検出器 |
| WO2018154627A1 (ja) * | 2017-02-21 | 2018-08-30 | 株式会社島津製作所 | 固体光検出器 |
| US20180366504A1 (en) * | 2017-06-15 | 2018-12-20 | Samsung Electronics Co., Ltd. | Image sensor measuring distance |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011029621A (ja) * | 2009-07-01 | 2011-02-10 | Hoya Corp | 撮像素子 |
| JP2011151345A (ja) * | 2009-12-25 | 2011-08-04 | Hoya Corp | 撮像素子および撮像装置 |
| JP2015065268A (ja) * | 2013-09-25 | 2015-04-09 | ソニー株式会社 | レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器 |
| JP2017041590A (ja) | 2015-08-21 | 2017-02-23 | シャープ株式会社 | 光電変換素子及び光電変換モジュール |
-
2020
- 2020-08-28 TW TW109129495A patent/TWI902704B/zh active
- 2020-08-28 JP JP2021543033A patent/JP7647559B2/ja active Active
- 2020-08-28 WO PCT/JP2020/032572 patent/WO2021039955A1/ja not_active Ceased
-
2022
- 2022-02-28 US US17/682,195 patent/US12255216B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200642116A (en) * | 2005-05-18 | 2006-12-01 | Mitsubishi Electric Corp | Avalanch photo diode |
| WO2018138851A1 (ja) * | 2017-01-26 | 2018-08-02 | 国立大学法人東北大学 | 固体光検出器 |
| WO2018154627A1 (ja) * | 2017-02-21 | 2018-08-30 | 株式会社島津製作所 | 固体光検出器 |
| US20180366504A1 (en) * | 2017-06-15 | 2018-12-20 | Samsung Electronics Co., Ltd. | Image sensor measuring distance |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7647559B2 (ja) | 2025-03-18 |
| US12255216B2 (en) | 2025-03-18 |
| TW202127645A (zh) | 2021-07-16 |
| WO2021039955A1 (ja) | 2021-03-04 |
| JPWO2021039955A1 (https=) | 2021-03-04 |
| US20220181375A1 (en) | 2022-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI902704B (zh) | 光電轉換元件、攝像元件及攝像系統 | |
| JP6815448B2 (ja) | 固体撮像装置 | |
| CN1881605B (zh) | 固体摄像元件、固体摄像装置及其制造方法 | |
| US20140339615A1 (en) | Bsi cmos image sensor | |
| US20140306095A1 (en) | Solid-state imaging device and imaging apparatus | |
| TWI588981B (zh) | 影像感測器 | |
| KR20080112973A (ko) | 어레이형 수광 소자 및 집광 방법 | |
| US10347778B2 (en) | Graded-index structure for optical systems | |
| JP2010243682A (ja) | 屈折率分布型光学素子及び該屈折率分布型光学素子を有する撮像素子 | |
| TWI850521B (zh) | 耀斑阻止影像感測器 | |
| US8410532B2 (en) | Solid-state imaging device including a multilayer wiring layer, color filters, lenses, and waveguide groove and manufacturing method for the same | |
| KR20100067982A (ko) | 이미지 센서 및 그 제조 방법 | |
| CN102637711A (zh) | 光电转换元件、及使用该元件的光电转换装置和成像系统 | |
| WO2022113774A1 (ja) | 撮像装置 | |
| JP6809717B2 (ja) | 固体光検出器 | |
| US12107106B2 (en) | Solid-state imaging device including groove with recessed and projecting sidewalls | |
| JP5105771B2 (ja) | 反射防止構造体及びそれを備えた光学装置 | |
| JP2017079243A (ja) | 固体撮像装置及びカメラ | |
| CN104157657B (zh) | 影像感测器 | |
| JP6039530B2 (ja) | 光電変換装置およびこれを用いた撮像システム | |
| JP2010287627A (ja) | 固体撮像装置 | |
| JP2019004073A (ja) | 光電変換装置およびスキャナ | |
| US9214487B2 (en) | Image sensor having light distributing element | |
| EP3588564A1 (en) | Solid-state photodetector | |
| KR20110065178A (ko) | 이미지 센서의 마이크로 렌즈 및 이미지 센서의 마이크로 렌즈 제조 방법 |