JP7647559B2 - 光電変換素子、撮像素子、および撮像システム - Google Patents

光電変換素子、撮像素子、および撮像システム Download PDF

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Publication number
JP7647559B2
JP7647559B2 JP2021543033A JP2021543033A JP7647559B2 JP 7647559 B2 JP7647559 B2 JP 7647559B2 JP 2021543033 A JP2021543033 A JP 2021543033A JP 2021543033 A JP2021543033 A JP 2021543033A JP 7647559 B2 JP7647559 B2 JP 7647559B2
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Prior art keywords
phase adjustment
photoelectric conversion
conversion element
light
adjustment layer
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Japanese (ja)
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JPWO2021039955A1 (https=
Inventor
友洋 中込
優 大久保
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Toppan Holdings Inc
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Toppan Holdings Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2021543033A 2019-08-30 2020-08-28 光電変換素子、撮像素子、および撮像システム Active JP7647559B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019157644 2019-08-30
JP2019157645 2019-08-30
JP2019157644 2019-08-30
JP2019157645 2019-08-30
PCT/JP2020/032572 WO2021039955A1 (ja) 2019-08-30 2020-08-28 光電変換素子、撮像素子、および撮像システム

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JPWO2021039955A1 JPWO2021039955A1 (https=) 2021-03-04
JP7647559B2 true JP7647559B2 (ja) 2025-03-18

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US (1) US12255216B2 (https=)
JP (1) JP7647559B2 (https=)
TW (1) TWI902704B (https=)
WO (1) WO2021039955A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112020006665T5 (de) * 2020-02-03 2022-12-15 Sony Semiconductor Solutions Corporation Elektronische vorrichtung
JP7624806B2 (ja) * 2020-04-03 2025-01-31 浜松ホトニクス株式会社 固体撮像装置
US20230082228A1 (en) * 2021-09-15 2023-03-16 University Of Central Florida Research Foundation, Inc. Ir photodetector with graphene and phase change layers and related methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151345A (ja) 2009-12-25 2011-08-04 Hoya Corp 撮像素子および撮像装置
JP2015065268A (ja) 2013-09-25 2015-04-09 ソニー株式会社 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器
WO2018138851A1 (ja) 2017-01-26 2018-08-02 国立大学法人東北大学 固体光検出器
WO2018154627A1 (ja) 2017-02-21 2018-08-30 株式会社島津製作所 固体光検出器
JP2019004149A (ja) 2017-06-15 2019-01-10 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 距離測定のためのイメージセンサ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5045436B2 (ja) * 2005-05-18 2012-10-10 三菱電機株式会社 アバランシェフォトダイオード
JP2011029621A (ja) * 2009-07-01 2011-02-10 Hoya Corp 撮像素子
JP2017041590A (ja) 2015-08-21 2017-02-23 シャープ株式会社 光電変換素子及び光電変換モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151345A (ja) 2009-12-25 2011-08-04 Hoya Corp 撮像素子および撮像装置
JP2015065268A (ja) 2013-09-25 2015-04-09 ソニー株式会社 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器
WO2018138851A1 (ja) 2017-01-26 2018-08-02 国立大学法人東北大学 固体光検出器
WO2018154627A1 (ja) 2017-02-21 2018-08-30 株式会社島津製作所 固体光検出器
JP2019004149A (ja) 2017-06-15 2019-01-10 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 距離測定のためのイメージセンサ

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US12255216B2 (en) 2025-03-18
TW202127645A (zh) 2021-07-16
WO2021039955A1 (ja) 2021-03-04
JPWO2021039955A1 (https=) 2021-03-04
US20220181375A1 (en) 2022-06-09
TWI902704B (zh) 2025-11-01

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