WO2021039809A1 - Composition de résine d'encapsulation de semi-conducteur et dispositif à semi-conducteur - Google Patents

Composition de résine d'encapsulation de semi-conducteur et dispositif à semi-conducteur Download PDF

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WO2021039809A1
WO2021039809A1 PCT/JP2020/032084 JP2020032084W WO2021039809A1 WO 2021039809 A1 WO2021039809 A1 WO 2021039809A1 JP 2020032084 W JP2020032084 W JP 2020032084W WO 2021039809 A1 WO2021039809 A1 WO 2021039809A1
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resin composition
semiconductor
resin
epoxy resin
encapsulating
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PCT/JP2020/032084
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English (en)
Japanese (ja)
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清泉 小森
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住友ベークライト株式会社
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Priority to CN202080060595.3A priority Critical patent/CN114364736A/zh
Priority to KR1020227009993A priority patent/KR102435734B1/ko
Priority to JP2021521068A priority patent/JP6950854B2/ja
Publication of WO2021039809A1 publication Critical patent/WO2021039809A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C08K5/092—Polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L35/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2227—Oxides; Hydroxides of metals of aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts

Definitions

  • the present invention relates to a semiconductor encapsulating resin composition and a semiconductor device including a semiconductor element sealed with the resin composition.
  • the pitch of the electrode spacing cannot be narrowed as much as that of a semiconductor element. ing.
  • the wire is easily flown by the injection pressure of the resin in the subsequent resin sealing step. This tendency is particularly remarkable in the side gate method.
  • the so-called compression molding method has come to be used as a method of resin-sealing an electronic element such as a semiconductor chip.
  • the powder-granular resin composition is supplied so as to face the object to be sealed held in the mold (for example, a substrate provided with an electronic element such as a semiconductor chip), and the resin composition is coated. Resin sealing is performed by compressing the sealed material and the powdery granular resin composition.
  • the molten powdery and granular resin flows in a direction substantially parallel to the main surface of the object to be sealed, so that the amount of flow can be reduced, and the object to be sealed due to the flow of the resin. Deformation and damage can be reduced. In particular, it is effective in reducing the occurrence of so-called wire flow in which wire-bonded wiring or the like is deformed or damaged by the resin flow.
  • Patent Document 1 contains an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a fatty acid having a melting point of 70 ° C. or lower, and a silane coupling agent having a boiling point of 200 ° C. or higher, and is in the form of particles having a specific particle size. It is described that the epoxy resin composition has improved meltability of the resin composition at the time of sealing and improved releasability after sealing.
  • the present invention has been made in view of such circumstances, and is a semiconductor encapsulating resin capable of improving meltability at the time of semiconductor encapsulation and suitably encapsulating a semiconductor element mounted on a substrate by compression molding. It is an object of the present invention to provide a composition. Another object of the present invention is to provide a semiconductor element having excellent reliability in which the semiconductor element is sealed with the semiconductor encapsulating resin composition.
  • the present inventor has made a sealing in order to sufficiently improve the filling property so that the resin composition as a sealing material hardly flows when the semiconductor element is sealed by compression molding and an unfilled portion is not generated. It was noted that sometimes this resin composition needs to be sufficiently melted.
  • the inorganic filler is highly dispersed by blending a resin composition for encapsulating a semiconductor containing an inorganic filler with a specific composition, or by setting the melt viscosity to a specific value while making the formulation a specific formulation. As a result, they have found that the meltability of the sealing resin composition is improved and the wire flow at the time of sealing can be suppressed, and the present invention has been completed.
  • thermosetting resin selected from the group consisting of (A) epoxy resin and bismaleimide resin, and (B) Hardener and (C) Inorganic filler and (D) A resin composition for encapsulating a semiconductor, which comprises a dispersant.
  • the minimum melt viscosity ⁇ min measured in the following ⁇ Measurement conditions for melt viscosity> is 1 mPa ⁇ s or more and 68,000 mPa ⁇ s or less.
  • ⁇ min be the minimum melt viscosity 5 seconds after the start of melt viscosity measurement.
  • a semiconductor device including a sealing member for sealing the semiconductor element.
  • a semiconductor device is provided in which the sealing member is a cured product of the semiconductor sealing resin composition.
  • the epoxy resin (A) is a biphenyl type epoxy resin, a bisphenol type epoxy resin, a stillben type epoxy resin, a phenol novolac type epoxy resin, a novolac type epoxy resin, a polyfunctional epoxy resin, a phenol aralkyl type epoxy resin, a naphthol type epoxy resin, Contains at least one selected from the group consisting of triazine nuclei-containing epoxy resins and bridged cyclic hydrocarbon compound modified phenolic epoxy resins.
  • the dispersant (D) is a polymer ionic dispersant having a polycarboxylic acid as a main skeleton.
  • a resin composition for semiconductor encapsulation is provided in which the dispersant (D) is in an amount of 0.01% by mass or more and 5.0% by mass or less with respect to the entire resin composition.
  • the resin composition for encapsulating a semiconductor of the present embodiment may be in the shape of a tablet, a sheet, or granules.
  • a semiconductor encapsulation resin composition capable of suitably encapsulating a semiconductor element mounted on a substrate by a compression molding method.
  • the resin composition for encapsulating a semiconductor in the first embodiment is in the form of granules (hereinafter, referred to as "granular resin composition” or simply “resin composition”).
  • the granular resin composition of the present embodiment comprises at least one thermosetting resin selected from the group consisting of (A) epoxy resin and bismaleimide resin, (B) a curing agent, and (C) an inorganic filler. (D) Includes a dispersant.
  • the granular resin composition of the present embodiment has a minimum melt viscosity of 1 mPa ⁇ s or more and 68000 mPa ⁇ s or less.
  • the granular resin composition of the present embodiment has a low melt viscosity due to the enhanced dispersibility of the inorganic filler by containing the dispersant. As a result, when the semiconductor element mounted on the substrate is sealed by the compression molding method using the resin composition, wire flow and wire deformation can be reduced. Further, since such a granular resin composition has good fluidity in a molten state, the semiconductor element can be suitably sealed without forming an unfilled portion on the semiconductor element.
  • the semiconductor element tends to be unable to be suitably sealed by compression molding.
  • the resin compositions having too small particle sizes are preferentially melted, and the resin composition used as a sealing material is produced during compression molding. It does not melt uniformly, and there is a tendency that the semiconductor element cannot be suitably sealed.
  • the amount of the resin composition having an excessively large particle size is too large, the resin composition having an excessively small particle size is difficult to melt, and is in the form of granules remaining in the resin composition melted during compression molding without melting. In some cases, the resin composition is present and the semiconductor element cannot be suitably sealed.
  • the particle size distribution of the granular resin composition can be measured with a general particle size meter. Alternatively, it can be calculated from the mass of particles remaining on each sieve by sieving a granular resin composition by stacking various mesh-opening sieves in ascending order of mesh size.
  • the melt viscosity of the granular resin composition can be set to a desired value by adjusting the type and blending amount of the components used.
  • thermosetting resin (A) used in the granular resin composition of the present embodiment contains at least one selected from an epoxy resin and a bismaleimide resin.
  • epoxy resin monomers, oligomers, and polymers having two or more epoxy groups in one molecule can be used in general, and the molecular weight and molecular structure thereof are not limited.
  • the epoxy resin include biphenyl type epoxy resin; bisphenol A type epoxy resin, bisphenol F type epoxy resin, tetramethyl bisphenol F type epoxy resin and other bisphenol type epoxy resin; stillben type epoxy resin; phenol novolac type epoxy resin, cresol.
  • Novolak type epoxy resin such as novolak type epoxy resin; polyfunctional epoxy resin such as triphenol methane type epoxy resin, alkyl modified triphenol methane type epoxy resin, etc .; phenol aralkyl type having a phenylene skeleton Phenol aralkyl type epoxy resin such as epoxy resin, naphthol aralkyl type epoxy resin having a phenylene skeleton, phenol aralkyl type epoxy resin having a biphenylene skeleton, naphthol aralkyl type epoxy resin having a biphenylene skeleton; dihydroxynaphthalene type epoxy resin, dihydroxynaphthalene 2 Naftor-type epoxy resin such as epoxy resin obtained by glycidyl etherification of the body; triazine nucleus-containing epoxy resin such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; Arashi ring such as dicyclopentadiene-modified phenol-
  • novolac type epoxy resin and polyfunctional epoxy from the viewpoint of suppressing warpage of the molded product obtained by curing the granular resin composition and improving the balance of various properties such as filling property, heat resistance, and moisture resistance.
  • a resin and a phenol aralkyl type epoxy resin can be preferably used.
  • the epoxy resin preferably contains one or more selected from the group consisting of orthocresol novolac type epoxy resin, phenol aralkyl type epoxy resin having a biphenylene skeleton, and triphenylmethane type epoxy resin, and more.
  • it comprises one or more selected from the group consisting of orthocresol novolac type epoxy resin and phenol aralkyl type epoxy resin having a biphenylene skeleton.
  • the bismaleimide resin used as the thermosetting resin (A) is a (co) polymer of a compound having two or more maleimide groups.
  • the compound having two or more maleimide groups includes, for example, at least one of the compound represented by the following general formula (1) and the compound represented by the following general formula (2).
  • R 1 is a divalent organic group having 1 or more carbon atoms and 30 or less carbon atoms, and may contain one or more of an oxygen atom and a nitrogen atom. From the viewpoint of improving the heat resistance of the cured product, it is more preferable that R 1 is an organic group containing an aromatic ring.
  • R 1 for example, a structure of the following general formula (1a) or (1b) can be exemplified.
  • R 31 is a divalent organic group having 1 to 18 carbon atoms which may contain one or more of an oxygen atom and a nitrogen atom. Further, each of the plurality of R 32s is independently a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 or more and 4 or less carbon atoms.
  • R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a phenyl group, and is preferably a hydrogen atom.
  • m is an average value, which is a number of 1 or more and 5 or less, preferably a number larger than 1 and 5 or less, more preferably a number larger than 1 and 3 or less, and further preferably a number larger than 1 and 2 or less. is there.
  • Examples of the compound represented by the general formula (1) that can be applied in the present embodiment include compounds represented by the following formulas (1-1) to (1-3).
  • n is an average value, which is a number of 0 or more and 10 or less, preferably 0 or more and 5 or less.
  • thermosetting resin (A) may further contain a thermosetting resin other than the epoxy resin and the bismaleimide resin.
  • thermosetting resins include unsaturated polyester resins such as benzoxazine resins, phenol resins, urea (urea) resins, and melamine resins, polyurethane resins, diallyl phthalate resins, silicone resins, cyanate resins, and polyimide resins.
  • unsaturated polyester resins such as benzoxazine resins, phenol resins, urea (urea) resins, and melamine resins, polyurethane resins, diallyl phthalate resins, silicone resins, cyanate resins, and polyimide resins.
  • One or more selected from the group consisting of polyamideimide resin and benzocyclobutene resin can be mentioned.
  • the content of the thermosetting resin (A) is preferably 2% by mass or more, and more preferably 4% by mass or more, based on the entire resin composition.
  • the upper limit of the blending ratio of the entire resin composition is not particularly limited, but is preferably 22% by mass or less, more preferably 20% by mass or less, based on the total amount of the resin composition.
  • the upper limit of the blending ratio is within the above range, the decrease in the glass transition temperature of the resin composition is small, and mutual adhesion can be appropriately suppressed. Further, in order to improve the fluidity and meltability, it is desirable to appropriately adjust the blending ratio according to the type of epoxy resin used.
  • the content of any component in the entire resin composition refers to the content of the resin composition in the entire solid content excluding the solvent when the resin composition contains a solvent. ..
  • the solid content of the resin composition refers to the non-volatile content in the resin composition, and refers to the balance excluding volatile components such as water and solvent.
  • the curing agent (B) used in the resin composition of the present embodiment can be roughly classified into three types, for example, a polyaddition type curing agent, a catalytic type curing agent, and a condensation type curing agent. These may be used alone or in combination of two or more.
  • the heavy addition type curing agent includes, for example, aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylene diamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and the like.
  • aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylene diamine (MXDA), diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and the like.
  • aromatic polyamines such as diaminodiphenylsulfone (DDS), polyamine compounds containing dicyandiamide (DICY), organic acid dihydrazide and the like
  • alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA).
  • Acid anhydrides containing anhydrides aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA); novolak type phenolic resin, polyvinylphenol, aralkyl type Phenolic resin-based curing agent such as phenol resin; Polymercaptan compound such as polysulfide, thioester, thioether; Isocyanate compound such as isocyanate prepolymer, blocked isocyanate; Organic acid such as carboxylic acid-containing polyester resin selected from the group 1 Includes species or two or more.
  • TMA trimellitic anhydride
  • PMDA pyromellitic anhydride
  • BTDA benzophenone tetracarboxylic acid
  • novolak type phenolic resin polyvinylphenol, aralkyl type Phenolic resin-based curing agent such as phenol resin
  • Polymercaptan compound such as poly
  • Catalytic curing agents are tertiary amine compounds such as, for example, benzyldimethylamine (BDMA), 2,4,6-trisdimethylaminomethylphenol (DMP-30); 2-methylimidazole, 2-ethyl-4- including one or two or more selected from the group consisting of Lewis acids such as BF 3 complex; imidazole compounds such as methylimidazole (EMI24).
  • BDMA benzyldimethylamine
  • DMP-30 2,4,6-trisdimethylaminomethylphenol
  • 2-methylimidazole, 2-ethyl-4- including one or two or more selected from the group consisting of Lewis acids such as BF 3 complex
  • imidazole compounds such as methylimidazole (EMI24).
  • the condensation type curing agent contains, for example, one or more selected from the group consisting of a resol type phenol resin; a urea resin such as a methylol group-containing urea resin; and a melamine resin such as a methylol group-containing melamine resin.
  • a phenol resin-based curing agent for example, a monomer, an oligomer, or a polymer having two or more phenolic hydroxyl groups in one molecule can be used in general, and the molecular weight and molecular structure thereof are not limited.
  • the phenol resin-based curing agent is, for example, a novolak type phenol resin such as phenol novolac resin, cresol novolac resin, bisphenol novolak; a polyfunctional phenol resin such as polyvinylphenol, triphenol methane type phenol resin; terpen modified phenol resin, dicyclo.
  • a novolak type phenol resin such as phenol novolac resin, cresol novolac resin, bisphenol novolak
  • a polyfunctional phenol resin such as polyvinylphenol, triphenol methane type phenol resin
  • terpen modified phenol resin dicyclo.
  • Modified phenol resins such as pentadiene-modified phenol resins; phenol aralkyl resins having a phenylene skeleton and / or biphenylene skeleton, phenol aralkyl resins such as naphthol aralkyl resins having a phenylene and / or biphenylene skeleton; bisphenols such as bisphenol A and bisphenol F Includes one or more selected from the group consisting of compounds.
  • a novolak type phenol resin a polyfunctional phenol resin and a phenol aralkyl type phenol resin.
  • a phenol novolac resin, a phenol aralkyl resin having a biphenylene skeleton, and a formaldehyde-modified triphenylmethane-type phenol resin can also be preferably used.
  • the lower limit of the blending ratio of the curing agent (B) is preferably 2% by mass or more, and more preferably 3% by mass or more, based on the entire resin composition. When the lower limit of the blending ratio is within the above range, sufficient fluidity can be obtained.
  • the upper limit of the blending ratio of the curing agent is preferably 16% by mass or less, more preferably 15% by mass or less, based on the entire resin composition. When the upper limit of the blending ratio is within the above range, mutual adhesion can be appropriately suppressed. Further, in order to improve the fluidity and the meltability, it is desirable to appropriately adjust the blending ratio according to the type of the curing agent used.
  • inorganic filler (C) examples include molten silica such as molten crushed silica and molten spherical silica; silica such as crystalline silica and amorphous silica; silicon dioxide; alumina; aluminum hydroxide; Silicon dioxide; and aluminum nitride and the like. These may be used alone or in combination of two or more.
  • the particle shape is preferably spherical as much as possible, and the filling amount can be increased by mixing particles having different particle sizes. Further, in order to improve the meltability of the resin composition, it is preferable to use silica or alumina, and it is preferable to use fused spherical silica as the silica.
  • the content of the inorganic filler (C) is preferably 80.0% by mass or more and 97.0% by mass or less with respect to the entire resin composition. If the content of the inorganic filler is too small, the heat resistance of the cured product of the resin composition is lowered, and the reliability of the obtained semiconductor device tends to be lowered. Further, when the content of the inorganic filler is large, the heat resistance of the cured product of the resin composition is enhanced, and the reliability of the obtained semiconductor device is improved. However, as the content of the inorganic filler increases, the meltability of the resin composition generally decreases, in other words, it tends to be difficult to melt and wire flow tends to occur. In the present embodiment, by containing a dispersant, which will be described later, the meltability of the resin composition is enhanced and the occurrence of wire flow is suppressed while maintaining the performance such as heat resistance of the cured product of the resin composition. Can be done.
  • Dispersant (D) As the dispersant (D) used in the resin composition of the present embodiment, a polymer ionic dispersant having a polycarboxylic acid as a main skeleton is used.
  • the polymer ionic dispersant preferably has a carboxyl group that acts as an adsorptive group that adsorbs to the inorganic filler, and a moiety that is compatible with the above-mentioned thermosetting resin.
  • Examples of such a polymer ionic dispersant include Aron A-6330 (manufactured by Toa Synthetic Co., Ltd., trade name), Hypermer KD-4, Hypermer KD8, Hypermer KD-9, Hypermer KD-57 (above, Crowder). Made by Japan Co., Ltd., product name), etc.
  • the polymer ionic dispersant represented by the following formula (3) is preferable, and specifically, Hypermer KD-4, Hypermer KD-8, Hypermer KD-9, etc. (all manufactured by Croda Japan, trade name). ) Can be mentioned.
  • p and m represent the number of repeating units, p is an integer of 1 to 20, m is an integer of 1 to 5, and R 3 is a carbon which may have a substituent. It is an alkyl group of numbers 1 to 10).
  • the polymer ionic dispersant as represented by the formula (3) has a carboxyl group adsorbed on the inorganic filler and a bulky aliphatic group having compatibility with the above-mentioned thermosetting resin.
  • the inorganic filler is highly dispersed in the thermosetting resin (A).
  • aggregation of inorganic fillers is suppressed due to steric hindrance between bulky aliphatic groups of the polymer ionic dispersant.
  • the inorganic filler is highly dispersed in the thermosetting resin (A) without agglutination.
  • the dispersant (D) is preferably used in an amount of 0.01% by mass or more and 5.0% by mass or less, and 0.1% by mass or more and 2.0% by mass or less, based on the entire resin composition.
  • the amount is more preferably 0.2% by mass or more and 1.5% by mass or less.
  • the resin composition of the present embodiment may contain a curing accelerator (E).
  • the curing accelerator (E) can be used without particular limitation as long as it can accelerate the curing reaction between the thermosetting resin (A) and the curing agent (B), for example.
  • Imidazoles such as 2-methylimidazole and 2-phenylimidazole, organic phosphines such as triphenylphosphine, tributylphosphine and trimethylphosphine, 1,8-diazabicyclo (5,4,0) undecene-7 (DBU), Examples thereof include tertiary amines such as triethanolamine and benzyldimethylamine. These may be used alone or in combination of two or more.
  • the content of the curing accelerator (E) is preferably 0.1% by mass or more and 2% by mass or less with respect to the total amount of the thermosetting resin (A) and the curing agent (B). If the content of the curing accelerator is less than the above lower limit, the curing promoting effect tends to be unable to be enhanced. Further, if it is more than the above upper limit value, problems tend to occur in fluidity and moldability, and it may lead to an increase in manufacturing cost.
  • the resin composition of the present embodiment may contain a silane coupling agent. A silane coupling agent can be used.
  • silane coupling agent examples include vinylsilanes such as vinyltris ( ⁇ -methoxyethoxy) silane, vinylethoxysilane and vinyltrimethoxysilane, (meth) acrylic silanes such as ⁇ -methacryloxypropyltrimethoxysilane, and ⁇ - (3).
  • the coupling agent is preferably used in an amount of 0.01% by mass or more and 1.0% by mass or less, and in an amount of 0.05% by mass or more and 0.9% by mass or less, based on the entire resin composition. It is more preferable that the amount is 0.08% by mass or more and 0.8% by mass or less.
  • the resin composition of the present embodiment contains conventionally known additives such as flame retardants, colorants, silicone flexible agents, and silicone flexible agents, as long as they do not interfere with the desired properties of the present invention.
  • An ion trap agent or the like may be used as needed.
  • the upper limit of the minimum melt viscosity ⁇ min measured by the slit type viscosity measuring device is 68,000 mPa ⁇ s or less, preferably 60,000 mPa ⁇ s or less, and more preferably 50,000 mPa ⁇ s or less. More preferably, it is 40,000 mPa ⁇ s or less. As a result, the filling property of the sealing material is improved.
  • the lower limit of the minimum melt viscosity ⁇ min measured by the slit type viscosity measuring device is not particularly limited, but is, for example, 1 mPa ⁇ s or more, preferably 50 mPa ⁇ s or more.
  • the upper limit of the time t1 at which the minimum melt viscosity ⁇ min measured by the slit type viscosity measuring device is reached is 15 seconds or less, preferably 12 seconds or less, and more preferably 10 seconds or less. is there. As a result, the filling property of the sealing material is improved.
  • the lower limit of the time t1 at which the minimum melt viscosity ⁇ min measured by the slit type viscosity measuring device is reached is not particularly limited, but is, for example, 5 seconds or more. Further, when t2 is the time when the melt viscosity increases after reaching ⁇ min and becomes ( ⁇ min +1000) (mPa ⁇ s) or more, the lower limit of t2-t1 is 1 second or more.
  • the upper limit of t2-t1 is 30 seconds or less, preferably 25 seconds or less, and more preferably 20 seconds or less.
  • the meltability (filling rate (%)) represented by ((A1 / (A1 + A2)) ⁇ 100) is preferably 30% or more and 100% or less.
  • the method for preparing the granular resin composition of the present embodiment is not particularly limited as long as it can produce a granular resin composition containing the above components and having a particle size distribution in the above range. Specifically, for example, it can be produced as follows. First, the above components and, if necessary, additives are uniformly mixed with a mixer such as a tumbler mixer or a Henschel mixer or a blender so as to have a predetermined content, and then a kneader, a roll, a disper, an ajihomo mixer, etc. And knead while heating with a planetary mixer or the like.
  • a mixer such as a tumbler mixer or a Henschel mixer or a blender
  • the temperature at the time of kneading needs to be in a temperature range in which a curing reaction does not occur, and although it depends on the composition of the epoxy resin and the curing agent, melt kneading is preferably performed at about 70 to 150 ° C. After kneading, it is cooled and solidified, and the solidified kneaded product is crushed with a crusher or the like. Thereby, a granular resin composition can be produced. Then, the resin composition may be sieved so that the particle size distribution is in the above range.
  • the granular resin composition of the present embodiment is used as a sealing material for sealing a semiconductor element mounted on a lead frame or a circuit board by using a compression molding method.
  • a lead frame or a circuit board one or more semiconductor elements laminated or mounted in parallel on the lead frame or the circuit board, and a bonding wire for electrically connecting the lead frame or the circuit board and the semiconductor element.
  • the semiconductor device including the semiconductor element and the sealing material for sealing the bonding wire will be described in detail with reference to the drawings, but the present invention is not limited to the one using the bonding wire.
  • FIG. 1 is a diagram showing a cross-sectional structure of an example of a semiconductor device obtained by sealing a semiconductor element mounted on a lead frame using the resin composition of the present embodiment.
  • the semiconductor element 401 is fixed on the die pad 403 via the cured die bond material 402.
  • the electrode pad of the semiconductor element 401 and the lead frame 405 are connected by a wire 404.
  • the semiconductor element 401 is sealed by a sealing material 406 composed of a cured product of the resin composition of the present embodiment.
  • FIG. 2 is a diagram showing a cross-sectional structure of an example of a semiconductor device obtained by sealing a semiconductor element mounted on a circuit board using the resin composition of the present embodiment.
  • the semiconductor element 401 is fixed on the circuit board 408 via the cured die bond material 402.
  • the electrode pad 407 of the semiconductor element 401 and the electrode pad 407 on the circuit board 408 are connected by a wire 404.
  • the surface of the circuit board 408 on which the semiconductor element 401 is mounted is sealed by the sealing material 406 composed of the cured product of the resin composition of the present embodiment.
  • the electrode pad 407 on the circuit board 408 is internally joined to the solder ball 409 on the unsealed surface side of the circuit board 408.
  • the semiconductor device including the resin composition of the present embodiment as a sealing material has excellent reliability because wire flow and wire breakage do not occur in the sealing process.
  • the semiconductor encapsulating resin composition in the second embodiment is in the form of a tablet or a sheet (hereinafter, referred to as “tablet or sheet-like resin composition”).
  • the tablet-shaped or sheet-shaped resin composition of the present embodiment contains (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a dispersant.
  • the epoxy resin (A) is a biphenyl type epoxy resin, a bisphenol type epoxy resin, a stillben type epoxy resin, a phenol novolac type epoxy resin, a novolac type epoxy resin, a polyfunctional epoxy resin, a phenol aralkyl type.
  • the dispersant (D) is a polymer ionic dispersant having a polycarboxylic acid as a main skeleton, and the dispersant (D) is 0.01 mass by mass with respect to the entire resin composition. The amount is% or more and 5.0% by mass or less.
  • the same components as those described in the first embodiment can be used as the components (A) to (D). Further, the blending amount of these components can be the same as the blending amount in the resin composition of the first embodiment.
  • the semiconductor resin composition of the present embodiment may further contain a bismaleimide resin.
  • a bismaleimide resin the same resin as that used in the first embodiment can be used.
  • the above components and, if necessary, additives are uniformly mixed with a mixer such as a tumbler mixer or a Henschel mixer or a blender so as to have a predetermined content. After that, the mixture is kneaded while being heated with a kneader, a roll, a disper, an azihomo mixer, a planetary mixer or the like, and this can be produced by tableting into a tablet shape.
  • a mixer such as a tumbler mixer or a Henschel mixer or a blender
  • the temperature at the time of kneading needs to be in a temperature range in which a curing reaction does not occur, and although it depends on the composition of the epoxy resin and the curing agent, melt kneading is preferably performed at about 70 to 150 ° C.
  • the tablet-shaped resin composition can be used for semiconductor encapsulation by known molding methods such as a transfer molding method, an injection molding method and a compression molding method.
  • the resin composition of the present embodiment is in the form of a sheet, it is obtained by heating and melting the resin composition heat-kneaded as described above between the pressure members, compressing it, and forming it into a sheet. More specifically, the resin composition is supplied onto a heat-resistant release film such as a polyester film so as to have a substantially uniform thickness to form a resin layer, and then the resin layer is rolled while being heated and softened. And roll by hot press. At that time, a heat-resistant film such as a polyester film is also arranged on the resin layer. After rolling the resin layer to a desired thickness in this way, it is cooled and solidified, the heat-resistant film is peeled off, and further cut into a desired size and shape if necessary. As a result, a resin sheet for encapsulating a semiconductor can be obtained.
  • the heating temperature for softening the resin layer is usually about 70 to 150 ° C.
  • the sheet-shaped resin composition can be used for semiconductor encapsulation by a compression molding method.
  • the sheet-shaped resin composition preferably has a thickness of 0.1 mm or more and 2 mm or less. If it is within the above range, there is no risk of damage, it is excellent in handleability, and it is easy to carry it into a compression molding die.
  • the minimum melt viscosity ⁇ min of the tablet or sheet resin composition of the present embodiment is 1 mPa ⁇ s or more and 68,000 mPa ⁇ s or less, preferably 60,000 mPa ⁇ s or less, more preferably 50,000 mPa ⁇ s or less, and most. Preferably, it is 40,000 mPa ⁇ s or less. If it exceeds the above range, the filling property is lowered, and voids and unfilled portions may be generated.
  • the lower limit is not particularly limited, but for example, 1 mPa ⁇ s or more, or 50 mPa ⁇ s or more is sufficient.
  • Hardener ⁇ -naphthol aralkyl (manufactured by Toto Kasei Co., Ltd., SN-485)
  • Inorganic filler Inorganic filler
  • Inorganic filler 1 Alumina (made by Micron, AX3-10R)
  • Inorganic filler 2 Silica (MUF-4, manufactured by Ryumori Co., Ltd.)
  • Dispersant 1 High molecular weight ionic dispersant having a polycarboxylic acid as the main skeleton (manufactured by Crowder Japan Co., Ltd., HYPERMER KD-9, CAS No.
  • Dispersant 2 High molecular weight ionic dispersant having a polycarboxylic acid as the main skeleton (manufactured by Claude Japan, HYPERMER KD-4, weight average molecular weight 1700, acid value 33 mgKOH)
  • Dispersant 3 High molecular weight ionic dispersant having a polycarboxylic acid as the main skeleton (manufactured by Croda Japan, HYPERMER KD-57)
  • (Coupling agent) -Coupling agent 1 N-Phenylaminopropyltrimethoxysilane (manufactured by Toray Dow Corning Co., Ltd., CF-4083)
  • Curing accelerator Tetraphenylphosphonium bis (naphthalene-2,3-dioxy) Phenyl silicate (manufactured by Sumitomo Bakelite)
  • Curing accelerator 2 Tetraphenylphosphonium-4,4'-sulfonyl diphenolate (manufactured by Sumitomo Bakelite)
  • Release agent Glycerin trimontanate (Recolve WE-4, manufactured by Client Japan)
  • Release agent 2 Diethanolamine-Dimontan ester (manufactured by Client Japan, Recommon NC-133)
  • (Colorant) -Colorant 1 Carbon black (manufactured by Tokai Carbon Co., Ltd., ERS-2001)
  • (oil) -Oil 1 Carbonyl-terminated butylnitrile rubber (manufactured by Chori GLEX, CTBN1008SP)
  • sica Silica (manufactured by Admatex, SC-2500-SQ)
  • Examples 1 to 4, Comparative Example 1 The raw materials of the resin compositions having the formulations shown in Table 1 are pulverized and mixed by a super mixer for 5 minutes, and then the mixed raw materials are mixed with a screw rotation speed of 400 rpm and 100 ° C. It was melt-kneaded at the resin temperature. Next, a resin composition melt-kneaded from above a rotor having a diameter of 20 cm was supplied at a rate of 2 kg / hr, and the rotor was rotated at 3000 rpm to obtain a cylindrical shape heated to 115 ° C. by centrifugal force. A plurality of small holes (hole diameter 1.2 mm) on the outer peripheral portion were passed through.
  • the obtained granular epoxy resin composition for sealing was stirred at 15 ° C. for 3 hours under an air stream in which the relative humidity was adjusted to 55% RH.
  • the obtained sealing resin composition was evaluated for the following items by the methods shown below.
  • melt viscosity (175 ° C)
  • the melt viscosity was measured using a slit type viscosity measuring device. Specifically, using a low-pressure transfer molding machine (40t manual press manufactured by NEC Co., Ltd.), the mold temperature is 175 ° C., the injection speed is Q: 178mm, 3 / sec, the width W: 15mm, and the thickness. D: P1 by injecting the obtained sealing resin composition into a rectangular flow path of 1 mm and length: 175 mm, and using a pressure sensor 1 embedded at a position 25 mm from the upstream tip of the flow path of the transfer molding machine.
  • the minimum pressure loss ⁇ P min (kgf / cm 2 ) was set to the minimum pressure loss ⁇ P (kgf / cm 2 ) 5 seconds after the start of measurement.
  • the melt viscosity converted from the minimum pressure loss ⁇ P min (kgf / cm 2 ) is defined as the minimum melt viscosity ⁇ min (mPa ⁇ s).
  • t1 be the time when the melt viscosity reaches ⁇ min (mPa ⁇ s). Further, the time at which the melt viscosity increases after reaching ⁇ min (mPa ⁇ s) and reaches a point of ( ⁇ min +1000) (mPa ⁇ s) or more is defined as t2.
  • Table 1 shows ⁇ P min (kgf / cm 2 ), ⁇ min (mPa ⁇ s), t1, ( ⁇ min +1000) (mPa ⁇ s) and t2.
  • meltability of the obtained resin composition was evaluated using the "filling rate” described below as an index.
  • the powder-granular sealing resin composition (7 g) obtained in Examples and Comparative Examples was added to an aluminum cup (diameter 50 mm, outer circumference height 10 mm, thickness 70 ⁇ m), and the oven was set at 175 ° C. for 3 minutes. It was heated. The cured resin composition was taken out from the aluminum cup, and the surface of the resin composition in contact with the bottom surface of the aluminum cup was photographed with a digital camera and imaged.
  • the obtained image is binarized, and the area of the contact portion where the melted resin composition and the bottom surface of the aluminum cup are in contact with each other in the portion where the heated resin composition is melted and spread on the bottom surface of the aluminum cup (A1).
  • the area (A2) of the gap portion where the molten resin composition and the bottom surface of the aluminum cup are not in contact with each other was measured, and the filling rate (%) was calculated as shown by the formula (1).
  • Filling rate [%] (A1 / (A1 + A2)) x 100 ... (1)
  • Table 1 The results of each are shown in Table 1 below.
  • a mold for measuring spiral flow according to EMMI-1-66 has a mold temperature of 175 ° C, an injection pressure of 6.9 MPa, and a holding time.
  • the resin composition was injected under the condition of 120 seconds, and the flow length was measured.
  • Spiral flow is an index of liquidity, and the larger the value, the better the liquidity.
  • the unit is cm.
  • the measurement of the meltability (filling rate) of the comparative example (* 1) indicates that the resin composition did not melt and remained granular.
  • the sealing resin composition of the examples has excellent meltability and fluidity, and is suitable as a sealing material used for sealing a semiconductor element mounted on a substrate by a compression molding method. It was usable.

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  • Computer Hardware Design (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)

Abstract

L'invention concerne une composition de résine d'encapsulation de semi-conducteur contenant (A) au moins une résine thermodurcissable choisie dans le groupe constitué par une résine époxy et une résine de bismaléimide, (B) un agent de durcissement, (C) une charge inorganique, et (D) un dispersant. La composition de résine d'encapsulation de semi-conducteur est une composition de résine granulaire et a une viscosité à l'état fondu minimale de 1 à 68000 mPa · s telle que mesurée, dans les conditions d'une température de moule de 175 °C et une vitesse d'injection Q de 178 mm3/sec, par un viscosimètre de type à fente ayant un trajet d'écoulement rectangulaire (largeur W : 15 mm, épaisseur D : 1 mm, longueur : 175 Mm).
PCT/JP2020/032084 2019-08-30 2020-08-25 Composition de résine d'encapsulation de semi-conducteur et dispositif à semi-conducteur WO2021039809A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016009814A (ja) * 2014-06-26 2016-01-18 京セラケミカル株式会社 半導体封止用樹脂シート及び樹脂封止型半導体装置
JP2016219600A (ja) * 2015-05-20 2016-12-22 京セラ株式会社 半導体用ダイアタッチペースト及び半導体装置
JP2018024747A (ja) * 2016-08-09 2018-02-15 京セラ株式会社 封止用樹脂組成物及び半導体装置
JP2018039925A (ja) * 2016-09-08 2018-03-15 京セラ株式会社 半導体接着用樹脂組成物および半導体装置
WO2018150779A1 (fr) * 2017-02-14 2018-08-23 京セラ株式会社 Composition de résine, feuille de résine, dispositif semi-conducteur et procédé de production de dispositif semi-conducteur

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Publication number Priority date Publication date Assignee Title
JP5189606B2 (ja) 2010-01-26 2013-04-24 パナソニック株式会社 半導体封止用エポキシ樹脂組成物、及び半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016009814A (ja) * 2014-06-26 2016-01-18 京セラケミカル株式会社 半導体封止用樹脂シート及び樹脂封止型半導体装置
JP2016219600A (ja) * 2015-05-20 2016-12-22 京セラ株式会社 半導体用ダイアタッチペースト及び半導体装置
JP2018024747A (ja) * 2016-08-09 2018-02-15 京セラ株式会社 封止用樹脂組成物及び半導体装置
JP2018039925A (ja) * 2016-09-08 2018-03-15 京セラ株式会社 半導体接着用樹脂組成物および半導体装置
WO2018150779A1 (fr) * 2017-02-14 2018-08-23 京セラ株式会社 Composition de résine, feuille de résine, dispositif semi-conducteur et procédé de production de dispositif semi-conducteur

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JPWO2021039809A1 (ja) 2021-09-13
JP6950854B2 (ja) 2021-10-13

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