WO2021033663A1 - Procédé de fabrication d'un détecteur de rayonnement - Google Patents

Procédé de fabrication d'un détecteur de rayonnement Download PDF

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Publication number
WO2021033663A1
WO2021033663A1 PCT/JP2020/030992 JP2020030992W WO2021033663A1 WO 2021033663 A1 WO2021033663 A1 WO 2021033663A1 JP 2020030992 W JP2020030992 W JP 2020030992W WO 2021033663 A1 WO2021033663 A1 WO 2021033663A1
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WIPO (PCT)
Prior art keywords
base material
radiation detector
manufacturing
substrate
reinforcing member
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PCT/JP2020/030992
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English (en)
Japanese (ja)
Inventor
宗貴 加藤
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富士フイルム株式会社
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Priority to JP2021540936A priority Critical patent/JPWO2021033663A1/ja
Publication of WO2021033663A1 publication Critical patent/WO2021033663A1/fr

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments

Definitions

  • the present invention relates to a method for manufacturing a radiation detector.
  • a radiographic imaging device that performs radiographic imaging for the purpose of medical diagnosis.
  • a radiation image capturing apparatus a radiation detector for detecting radiation transmitted through a subject and generating a radiation image is used.
  • the radiation detector includes a conversion layer such as a scintillator that converts radiation into light, and a substrate provided with a plurality of pixels that accumulate charges generated in response to the light converted by the conversion layer. is there.
  • a so-called narrow frame radiation detector in which the distance from the pixel region provided with pixels to the edge of the radiation detector is short is known.
  • a radiation detector having a narrow frame is manufactured by cutting a sensor substrate along a side of a pixel region.
  • a radiation detector using a flexible base material is known.
  • the radiation imaging device radiation detector
  • the subject may be easily photographed.
  • the sensor substrate is easily bent, so that unlike the technique described in Japanese Patent Application Laid-Open No. 2014-13193, it is difficult to cut the sensor substrate and the sensor. Pixels may be damaged by cutting the substrate.
  • the present disclosure provides a method for manufacturing a radiation detector that can easily increase the proportion of pixel regions in which pixels are formed on a substrate.
  • a flexible base material is provided on a support, and a plurality of pixels accumulating charges according to the irradiated radiation are provided in a pixel region of the base material.
  • the cut surfaces of the reinforcing member and the base material are flush with each other in the method for manufacturing the radiation detector according to the first aspect.
  • the substrate in the method for manufacturing a radiation detector according to the third aspect of the present disclosure, is a cable on a surface provided with a plurality of pixels. Has a terminal region provided with a terminal portion for electrically connecting the two, and in the step of cutting the base material, the region other than the terminal region is cut.
  • the cable is electrically connected to the terminal portion before the step of peeling the substrate from the support. Further provided with a process of connecting the elements.
  • the base material of the substrate is formed.
  • a step of providing a terminal portion for electrically connecting a cable to a surface provided with a plurality of pixels along the side on the cut side is further provided.
  • the reinforcing member is more rigid than the base material. Is high.
  • the method for manufacturing the radiation detector according to the seventh aspect of the present disclosure is the method for manufacturing the radiation detector according to any one of the first to sixth aspects, wherein the reinforcing member has a flexural modulus of 500 MPa. It is 3000 MPa or less.
  • the reinforcing member is made of polycarbonate and polyethylene terephthalate. It is a member made of at least one material.
  • the method for manufacturing the radiation detector according to the ninth aspect of the present disclosure is the method for manufacturing the radiation detector according to any one of the first to seventh aspects, wherein the base material is provided with a plurality of pixels. In the step of cutting the laminated body having a mark on the marked surface, the position corresponding to the mark is cut.
  • the method for manufacturing the radiation detector according to the tenth aspect of the present disclosure is the step of forming the substrate and the method for manufacturing the substrate in any one of the first to ninth aspects of the method for manufacturing the radiation detector.
  • a step of forming a conversion layer for converting radiation into light is further provided on the surface of the base material provided with the plurality of pixels, and each of the plurality of pixels is converted by the conversion layer. Accumulates the charge according to the light.
  • each of the plurality of pixels emits radiation. It includes a sensor unit that receives and generates an electric charge, and accumulates the electric charge generated by the sensor unit.
  • FIG. 2 is a cross-sectional view taken along the line AA of the radiation detector shown in FIG. It is sectional drawing BB of the radiation detector shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 1st Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 1st Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 1st Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 1st Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 1st Embodiment.
  • FIG. 5 is a plan view of an example of the radiation detector of the second embodiment as viewed from the first surface side of the base material.
  • FIG. 5 is a cross-sectional view taken along the line AA of the radiation detector shown in FIG.
  • FIG. 5 is a sectional view taken along line BB of the radiation detector shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 2nd Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 2nd Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 2nd Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 2nd Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 2nd Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 2nd Embodiment. It is a figure for demonstrating an example of the manufacturing method of the radiation detector of 2nd Embodiment.
  • FIG. 5 is a cross-sectional view taken along the line AA of another example radiation detector. It is sectional drawing of an example of the radiation imaging apparatus of embodiment which is housed in a housing. It is sectional drawing of another example of the radiation imaging apparatus of embodiment which is housed in a housing. It is sectional drawing of another example of the radiation imaging apparatus of embodiment which is housed in a housing.
  • the radiation detector of the present embodiment has a function of detecting radiation transmitted through a subject and outputting image information representing a radiation image of the subject.
  • the radiation detector of the present embodiment includes a sensor substrate and a conversion layer that converts radiation into light (see FIG. 2, sensor substrate 12 and conversion layer 14 of the radiation detector 10).
  • the sensor substrate 12 of this embodiment is an example of the substrate of the present disclosure.
  • FIG. 1 is a block diagram showing an example of a configuration of a main part of an electrical system in the radiation imaging apparatus of the present embodiment.
  • the radiation imaging device 1 of the present embodiment includes a radiation detector 10, a control unit 100, a drive unit 102, a signal processing unit 104, an image memory 106, and a power supply unit 108.
  • the radiation detector 10 includes a sensor substrate 12 and a conversion layer (see FIG. 2) that converts radiation into light.
  • the sensor substrate 12 includes a flexible base material 11 and a plurality of pixels 30 provided on the first surface 11A of the base material 11. In the following, the plurality of pixels 30 may be simply referred to as “pixel 30”.
  • each pixel 30 of the present embodiment has a sensor unit 34 that generates and accumulates electric charges according to the light converted by the conversion layer, and a switching element 32 that reads out the electric charges accumulated by the sensor unit 34.
  • a thin film transistor TFT: Thin Film Transistor
  • the switching element 32 will be referred to as "TFT32".
  • the sensor unit 34 and the TFT 32 are formed, and a layer in which the pixels 30 are formed on the first surface 11A of the base material 11 is provided as a flattened layer.
  • the pixel 30 corresponds to the pixel region 35 of the sensor substrate 12 in one direction (scanning wiring direction corresponding to the horizontal direction in FIG. 1, hereinafter also referred to as “row direction”) and an intersecting direction with respect to the row direction (corresponding to the vertical direction in FIG. It is arranged in a two-dimensional manner along the signal wiring direction (hereinafter also referred to as "row direction").
  • row direction the arrangement of the pixels 30 is shown in a simplified manner. For example, 1024 pixels ⁇ 1024 pixels 30 are arranged in the row direction and the column direction.
  • the radiation detector 10 is provided with a plurality of scanning wires 38 for controlling the switching state (on and off) of the TFT 32, which are provided for each row of the pixel 30, and for each column of the pixel 30.
  • a plurality of signal wirings 36 from which the electric charge accumulated in the sensor unit 34 is read out are provided so as to intersect each other.
  • Each of the plurality of scanning wires 38 is connected to the drive unit 102 via the cable 112A (see FIG. 2) to drive the TFT 32 output from the drive unit 102 to control the switching state.
  • a signal flows through each of the plurality of scanning wires 38.
  • each of the plurality of signal wirings 36 is connected to the signal processing unit 104 via the cable 112B (see FIG. 2), so that the electric charge read from each pixel 30 is signal-processed as an electric signal. It is output to unit 104.
  • the signal processing unit 104 generates and outputs image data corresponding to the input electric signal.
  • a control unit 100 which will be described later, is connected to the signal processing unit 104, and the image data output from the signal processing unit 104 is sequentially output to the control unit 100.
  • An image memory 106 is connected to the control unit 100, and image data sequentially output from the signal processing unit 104 is sequentially stored in the image memory 106 under the control of the control unit 100.
  • the image memory 106 has a storage capacity capable of storing a predetermined number of image data, and each time a radiographic image is taken, the image data obtained by the taking is sequentially stored in the image memory 106.
  • the control unit 100 includes a CPU (Central Processing Unit) 100A, a memory 100B including a ROM (Read Only Memory) and a RAM (Random Access Memory), and a non-volatile storage unit 100C such as a flash memory.
  • a CPU Central Processing Unit
  • a memory 100B including a ROM (Read Only Memory) and a RAM (Random Access Memory)
  • a non-volatile storage unit 100C such as a flash memory.
  • An example of the control unit 100 is a microcomputer or the like.
  • the control unit 100 controls the overall operation of the radiographic imaging apparatus 1.
  • the image memory 106, the control unit 100, and the like are formed on the control board 110.
  • a common wiring 39 is provided in the wiring direction of the signal wiring 36 in order to apply a bias voltage to each pixel 30.
  • the power supply unit 108 supplies electric power to various elements and circuits such as the control unit 100, the drive unit 102, the signal processing unit 104, the image memory 106, and the power supply unit 108.
  • various elements and circuits such as the control unit 100, the drive unit 102, the signal processing unit 104, the image memory 106, and the power supply unit 108.
  • the wiring connecting the power supply unit 108 with various elements and various circuits is omitted.
  • FIG. 2 is an example of a plan view of the radiation detector 10 of the present embodiment as viewed from the first surface 11A side of the base material 11.
  • FIG. 3A is an example of a cross-sectional view taken along the line AA of the radiation detector 10 in FIG. 2
  • FIG. 3B is an example of a cross-sectional view taken along the line BB of the radiation detector 10 in FIG.
  • the first surface 11A of the base material 11 is divided into a terminal region 60A in which the terminal portion 60 is provided and a terminal region outside 60B in which the terminal portion 60 is not provided.
  • the pixel region 35 provided with the above-mentioned pixel 30 is provided in the terminal region outer 60B.
  • the base material 11 is a resin sheet that is flexible and contains, for example, a plastic such as PI (PolyImide: polyimide).
  • the thickness of the base material 11 is such that the desired flexibility can be obtained according to the hardness of the material, the size of the sensor substrate 12 (the area of the first surface 11A or the second surface 11B), and the like. Good.
  • the gravity of the base material 11 is 2 mm at a position 10 cm away from the fixed side.
  • the base material 11 hangs down (becomes lower than the height of the fixed side).
  • a thickness of 5 ⁇ m to 125 ⁇ m may be used, and a thickness of 20 ⁇ m to 50 ⁇ m is more preferable.
  • the base material 11 has a property that can withstand the production of the pixel 30, and in the present embodiment, it has a property that can withstand the production of an amorphous silicon TFT (a-Si TFT).
  • a-Si TFT amorphous silicon TFT
  • the coefficient of thermal expansion (CTE: Coefficient of Thermal Expansion) at 300 ° C. to 400 ° C. is about the same as that of an amorphous silicon (Si) wafer (for example, ⁇ 5 ppm / K). Specifically, it is preferably 20 ppm / K or less.
  • the heat shrinkage rate of the base material 11 it is preferable that the heat shrinkage rate at 400 ° C. is 0.5% or less when the thickness is 25 ⁇ m.
  • the elastic modulus of the base material 11 preferably does not have a transition point possessed by a general PI in the temperature range between 300 ° C. and 400 ° C., and the elastic modulus at 500 ° C. is 1 GPa or more.
  • the base material 11 of the present embodiment has a fine particle layer containing inorganic fine particles having an average particle diameter of 0.05 ⁇ m or more and 2.5 ⁇ m or less and absorbing backscattered rays in order to suppress backscattered rays by itself. It is preferable to have.
  • inorganic fine particles in the case of the resinous base material 11, it is preferable to use an inorganic material having an atomic number larger than the atoms constituting the organic material which is the base material 11 and 30 or less.
  • Specific examples of such fine particles include SiO2, which is an oxide of Si having an atomic number of 14, MgO, which is an oxide of Mg having an atomic number of 12, Al2O3, which is an oxide of Al having an atomic number of 13.
  • examples thereof include TiO2, which is an oxide of Ti having an atomic number of 22.
  • Specific examples of the resin sheet having such characteristics include XENOMAX (registered trademark).
  • the above thickness in this embodiment was measured using a micrometer.
  • the coefficient of thermal expansion was measured according to JIS K7197: 1991. In the measurement, test pieces were cut out from the main surface of the base material 11 at different angles of 15 degrees, the coefficient of thermal expansion was measured for each of the cut out test pieces, and the highest value was taken as the coefficient of thermal expansion of the base material 11. ..
  • the coefficient of thermal expansion is measured at intervals of 10 ° C. from -50 ° C to 450 ° C in each of the MD (Machine Direction) direction and the TD (Transverse Direction) direction, and (ppm / ° C) is converted to (ppm / K). did.
  • a TMA4000S device manufactured by MAC Science Co., Ltd. was used, the sample length was 10 mm, the sample width was 2 mm, the initial load was 34.5 g / mm2, the heating rate was 5 ° C / min, and the atmosphere was argon. And said.
  • the base material 11 having the desired flexibility is not limited to a resin sheet or the like.
  • the base material 11 may be a glass substrate or the like having a relatively thin thickness.
  • the plurality of pixels 30 are provided in a part of the inside of 60B outside the terminal region on the first surface 11A of the base material 11. Further, in the sensor substrate 12 of the present embodiment, the pixel 30 is not provided in the terminal region 60A on the first surface 11A of the substrate 11. In the present embodiment, the region where the pixel 30 is provided on the first surface 11A of the base material 11 is defined as the pixel region 35.
  • the conversion layer 14 of the present embodiment covers the pixel region 35.
  • a scintillator containing CsI (cesium iodide) is used as an example of the conversion layer 14.
  • scintillators include CsI: Tl (cesium iodide added with thallium) and CsI: Na (cesium iodide added with sodium) having an emission spectrum of 400 nm to 700 nm during X-ray irradiation. It is preferable to include it.
  • the emission peak wavelength of CsI: Tl in the visible light region is 565 nm.
  • an adhesive layer 40, a reflective layer 42, an adhesive layer 44, and a protective layer 46 are provided on the conversion layer 14 of the present embodiment.
  • the adhesive layer 40 covers the entire surface of the conversion layer 14.
  • the adhesive layer 40 has a function of fixing the reflective layer 42 on the conversion layer 14.
  • the adhesive layer 40 preferably has light transmission.
  • an acrylic adhesive, a hot melt adhesive, and a silicone adhesive can be used as the material of the adhesive layer 40.
  • the acrylic pressure-sensitive adhesive include urethane acrylate, acrylic resin acrylate, and epoxy acrylate.
  • the hot melt adhesive include EVA (ethylene / vinyl acetate copolymer resin), EAA (ethylene / acrylic acid copolymer resin), EEA (ethylene-ethylacrylate copolymer resin), and EMMA (ethylene-methacryl).
  • Thermoplastics such as methyl acid copolymer) can be mentioned.
  • the thickness of the adhesive layer 40 is preferably 2 ⁇ m or more and 7 ⁇ m or less.
  • the thickness of the adhesive layer 40 is preferably 2 ⁇ m or more and 7 ⁇ m or less.
  • the reflective layer 42 covers the entire surface of the adhesive layer 40.
  • the reflective layer 42 has a function of reflecting the light converted by the conversion layer 14.
  • the reflective layer 42 is preferably made of an organic material.
  • white PET Polyethylene terephthalate
  • TiO 2 , Al 2 O 3 foamed white PET
  • polyester-based highly reflective sheet polyester-based highly reflective sheet
  • specular reflective aluminum and the like can be used as the material of the reflective layer 42.
  • White PET is obtained by adding a white pigment such as TiO 2 or barium sulfate to PET, and foamed white PET is white PET having a porous surface.
  • the polyester-based high-reflection sheet is a sheet (film) having a multilayer structure in which a plurality of thin polyester sheets are stacked.
  • the thickness of the reflective layer 42 is preferably 10 ⁇ m or more and 40 ⁇ m or less.
  • the adhesive layer 44 covers the entire surface of the reflective layer 42.
  • the end of the adhesive layer 44 extends to the surface of the sensor substrate 12. That is, the adhesive layer 44 is adhered to the sensor substrate 12 at its end.
  • the adhesive layer 44 has a function of fixing the reflective layer 42 and the protective layer 46 to the conversion layer 14.
  • the material of the adhesive layer 44 the same material as the material of the adhesive layer 40 can be used, but the adhesive force of the adhesive layer 44 is preferably larger than that of the adhesive layer 40.
  • the protective layer 46 is provided so as to cover the entire conversion layer 14 and its end portion to cover a part of the sensor substrate 12.
  • the protective layer 46 functions as a moisture-proof film that prevents moisture from entering the conversion layer 14.
  • PET PET
  • PPS PolyPhenylene Sulfide: polyphenylene sulfide
  • OPP Oriented PolyPropylene: biaxially stretched polypropylene film
  • PEN PolyEthylene Naphthalate: polyethylene naphthalate
  • PI polyEthylene Naphthalate
  • PI polyethylene naphthalate
  • Membranes and parylene registered trademark
  • a laminated film of a resin film and a metal film may be used as the protective layer 46. Examples of the laminated film of the resin film and the metal film include a sheet of Alpet (registered trademark).
  • the antistatic layer 54 and the adhesive 52 are interposed on the second surface 11B side of the substrate 11. ,
  • the reinforcing member 50 is provided.
  • the reinforcing member 50 has a function of reinforcing the strength of the base material 11.
  • the reinforcing member 50 of the present embodiment has higher flexural rigidity than the base material 11, and the dimensional change (deformation) with respect to the force applied in the direction perpendicular to the surface facing the conversion layer 14 is the second of the base material 11. It is smaller than the dimensional change with respect to the force applied in the direction perpendicular to the surface 11B of.
  • the bending rigidity of the reinforcing member 50 is preferably 100 times or more the bending rigidity of the base material 11.
  • the thickness of the reinforcing member 50 of the present embodiment is thicker than the thickness of the base material 11.
  • the thickness of the reinforcing member 50 is preferably about 0.2 mm to 0.25 mm.
  • the reinforcing member 50 preferably has a higher bending rigidity than the base material 11 from the viewpoint of suppressing the bending of the base material 11.
  • the flexural modulus is lowered, the flexural rigidity is also lowered, and in order to obtain the desired flexural rigidity, the thickness of the reinforcing member 50 must be increased, and the thickness of the entire radiation detector 10 is increased. ..
  • the thickness of the reinforcing member 50 tends to be relatively thick when trying to obtain a bending rigidity exceeding 140000 Pacm 4. Therefore, considering that appropriate rigidity can be obtained and the thickness of the entire radiation detector 10 is taken into consideration, the material used for the reinforcing member 50 is more preferably having a flexural modulus of 500 MPa or more and 3000 MPa or less. Further, the bending rigidity of the reinforcing member 50 is preferably 540 Pacm 4 or more and 140000 Pacm 4 or less.
  • the coefficient of thermal expansion of the reinforcing member 50 of the present embodiment is preferably close to the coefficient of thermal expansion of the material of the conversion layer 14, and more preferably the coefficient of thermal expansion of the reinforcing member 50 with respect to the coefficient of thermal expansion of the conversion layer 14.
  • the ratio (coefficient of thermal expansion of the reinforcing member 50 / coefficient of thermal expansion of the conversion layer 14) is preferably 0.5 or more and 2 or less.
  • the coefficient of thermal expansion of such a reinforcing member 50 is preferably 30 ppm / K or more and 80 ppm / K or less.
  • the coefficient of thermal expansion is 50 ppm / K.
  • the material of the reinforcing member 50 is more preferably a material containing at least one of PET and PC.
  • the reinforcing member 50 preferably contains a material having a yield point.
  • the “yield point” refers to a phenomenon in which the stress drops suddenly when the material is pulled, and the strain does not increase on the curve showing the relationship between the stress and the strain.
  • the point of increase which refers to the top of the stress-strain curve when a tensile strength test is performed on a material.
  • Resins having a yield point generally include resins that are hard and sticky, and resins that are soft and sticky and have moderate strength. Examples of the hard and sticky resin include PC and the like. Further, examples of the resin having a softness, a strong stickiness, and a medium strength include polypropylene and the like.
  • the reinforcing member 50 of this embodiment is a substrate made of plastic.
  • the plastic used as the material of the reinforcing member 50 is preferably a thermoplastic resin for the reasons described above, and is preferably PC, PET, styrene, acrylic, polyacetase, nylon, polypropylene, ABS (Acrylonitrile Butadinee Styrene), engineering plastic, and polyphenylene ether. At least one of.
  • the reinforcing member 50 is preferably at least one of polypropylene, ABS, engineering plastic, PET, and polyphenylene ether, and more preferably at least one of styrene, acrylic, polyacetase, and nylon. , PC and PET are more preferable.
  • a plurality of terminal portions 60 (16 in total in this embodiment) are provided in the terminal region 60A of the radiation detector 10 of the present embodiment.
  • the terminal region 60A is provided on each of a pair of sides and sides facing the pair of sides (total of three sides) of the rectangular sensor substrate 12 (base material 11).
  • the terminal region 60A refers to a region on the first surface 11A of the base material 11 where a plurality of terminal portions 60 are provided, and includes at least a region where the terminal portions 60 are in contact with the first surface 11A.
  • the terminal region includes at least the region where the terminal portion 60 is in contact with the first surface 11A over the entire side of the sensor substrate 12 (base material 11) where the terminal portion 60 is provided. It is called 60A.
  • a cable 112 is electrically connected to each of the terminal portions 60 provided in the terminal region 60A of the base material 11.
  • the cable 112A is thermocompression-bonded to each of a plurality of terminal portions 60 (8 each in FIG. 2) provided on each of the pair of opposite sides of the base material 11. ing.
  • the cable 112A is a so-called COF (Chip on Film), and the cable 112A is equipped with a drive IC (Integrated Circuit) 210.
  • the drive IC 210 is connected to a plurality of signal lines (not shown) included in the cable 112A.
  • the method of electrically connecting the terminal portion 60 and the cable 112A is not limited to this embodiment, and may be, for example, electrically connected by a connector.
  • a connector examples include a ZIF (Zero Insert Force) structure connector and a Non-ZIF structure connector.
  • ZIF Zero Insert Force
  • Non-ZIF structure connector examples of such a connector.
  • the cable 112A and the cable 112B described later are generically referred to without distinction, they are simply referred to as "cable 112".
  • the other end of the cable 112A which is electrically connected to the terminal portion 60 of the sensor board 12, and the other end on the opposite side, is electrically connected to the connection area 202 of the drive board 200.
  • a plurality of signal lines (not shown) included in the cable 112A are thermocompression-bonded to the drive board 200 to form circuits and elements mounted on the drive board 200 (not shown). Be connected.
  • the method of electrically connecting the drive board 200 and the cable 112A is not limited to this embodiment, and may be, for example, electrically connected by a connector. Examples of such a connector include a ZIF structure connector and a Non-ZIF structure connector.
  • the drive board 200 of this embodiment is a flexible PCB (Printed Circuit Board) board, which is a so-called flexible board.
  • the circuit components (not shown) mounted on the drive board 200 are components mainly used for processing digital signals (hereinafter, referred to as "digital components").
  • Digital components tend to have a relatively smaller area (size) than analog components, which will be described later.
  • Specific examples of digital components include digital buffers, bypass capacitors, pull-up / pull-down resistors, damping resistors, EMC (Electro Magnetic Compatibility) countermeasure chip components, power supply ICs, and the like.
  • the drive substrate 200 does not necessarily have to be a flexible substrate, may be a non-flexible rigid substrate, or may use a rigid flexible substrate.
  • the drive unit 102 is realized by the drive board 200 and the drive IC 210 mounted on the cable 112A.
  • the drive IC 210 includes various circuits and elements that realize the drive unit 102, which are different from the digital components mounted on the drive board 200.
  • the cable 112B is electrically connected to each of the plurality of (8 in FIG. 2) terminal portions 60 provided on the side where the cable 112A intersects one side of the electrically connected base material 11.
  • the cable 112B is a so-called COF (Chip on Film), and the cable 112B is equipped with a signal processing IC 310.
  • the signal processing IC 310 is connected to a plurality of signal lines (not shown) included in the cable 112B.
  • the method of electrically connecting the terminal portion 60 and the cable 112B is not limited to this embodiment, and may be, for example, electrically connected by a connector. Examples of such a connector include a ZIF structure connector and a Non-ZIF structure connector.
  • the other end of the cable 112B which is electrically connected to the terminal portion 60 of the sensor board 12, and the other end on the opposite side, is electrically connected to the connection area 302 of the signal processing board 300.
  • a plurality of signal lines (not shown) included in the cable 112B are thermocompression-bonded to the signal processing board 300, so that circuits and elements mounted on the signal processing board 300 (not shown) and the like (not shown). ) Is connected.
  • the method of electrically connecting the signal processing board 300 and the cable 112B is not limited to this embodiment, and may be, for example, electrically connected by a connector. Examples of such a connector include a ZIF structure connector and a Non-ZIF structure connector.
  • the method of electrically connecting the cable 112A and the drive board 200 and the method of electrically connecting the cable 112B and the signal processing board 300 may be the same or different.
  • the cable 112A and the drive board 200 may be electrically connected by thermocompression bonding
  • the cable 112B and the signal processing board 300 may be electrically connected by a connector.
  • the signal processing board 300 of the present embodiment is a flexible PCB board like the drive board 200 described above, and is a so-called flexible board.
  • the circuit components (not shown) mounted on the signal processing board 300 are components mainly used for processing analog signals (hereinafter, referred to as “analog components”). Specific examples of analog components include a charge amplifier, an analog-to-digital converter (ADC), a digital-to-analog converter (DAC), a power supply IC, and the like. Further, the circuit component of the present embodiment also includes a coil around a power supply having a relatively large component size and a large-capacity capacitor for smoothing.
  • the signal processing substrate 300 does not necessarily have to be a flexible substrate, may be a non-flexible rigid substrate, or may use a rigid flexible substrate.
  • the signal processing unit 104 is realized by the signal processing board 300 and the signal processing IC 310 mounted on the cable 112B.
  • the signal processing IC 310 includes various circuits and elements that realize the signal processing unit 104, which are different from the analog components mounted on the signal processing board 300.
  • the number of drive boards 200 and signal processing boards 300 is not limited to this embodiment.
  • either one of the drive board 200 and the signal processing board 300 provided on each side of the sensor board 12 may be used as one board.
  • the cable 112 is electrically connected to the terminal portion 60 by thermocompression bonding the cable 112 to the terminal portion 60 via the connection layer 62.
  • connection layer 62 has a function of electrically connecting the terminal portion 60 and the cable 112.
  • Examples of the connecting layer 62 include an anisotropic conductive film, and ACF (Anisotropic Conductive Film) in which conductive particles (not shown) are dispersed in an adhesive that is cured by heat can be used.
  • the first surface 11A side of the base material 11 in the laminated body 63 in which the terminal portion 60, the connecting layer 62, and the cable 112 are laminated is covered with the reinforcing member 64.
  • the side surface of the laminate in which the terminal portion 60, the connection layer 62, and the cable 112 are laminated and the side surface of the base material 11 are covered with the reinforcing member 65.
  • the reinforcing member 64 and the reinforcing member 65 have a function of strengthening the electrical connection between the terminal portion 60 and the cable 112. Further, the reinforcing member 64 and the reinforcing member 65 of the present embodiment have moisture resistance.
  • the reinforcing member 64 and the reinforcing member 65 for example, a moisture-proof insulating film can be used, and Tuffy (registered trademark) or the like, which is a moisture-proof insulating material for FPD (Flat Panel Display), can be used.
  • Tuffy registered trademark
  • FPD Flat Panel Display
  • Each of the reinforcing member 64 and the reinforcing member 65 may be a member made of the same material or a member made of a different material.
  • the substrate 11 is attached to a support 400 such as a glass substrate which is thicker than the substrate 11 via a release layer (not shown).
  • a support 400 such as a glass substrate which is thicker than the substrate 11 via a release layer (not shown).
  • a sheet to be the base material 11 is attached onto the support 400.
  • the second surface 11B of the base material 11 faces the support 400 side.
  • the method of forming the base material 11 is not limited to this embodiment, and may be, for example, a form in which the base material 11 is formed by a coating method.
  • an alignment mark 92 that serves as a mark of the cutting position in the step of cutting the laminate 19 shown in FIGS. 4F and 4G described later is formed.
  • the timing of providing the alignment mark 92 is not limited to this embodiment.
  • the first surface 11A of the base material 11 The alignment mark 92 may be provided on the.
  • the alignment mark 92 of the present embodiment is an example of the mark of the present disclosure.
  • the pixel 30 is formed in the pixel region 35 of 60B outside the terminal region of the first surface 11A of the base material 11.
  • the pixel 30 is formed on the first surface 11A of the base material 11 via an undercoat layer (not shown) using SiN or the like.
  • the sensor substrate 12 in which the pixels 30 are formed in the pixel region 35 is formed.
  • the conversion layer 14 is formed on the pixel 30 (pixel region 35).
  • the CsI conversion layer 14 is formed as columnar crystals directly on the sensor substrate 12 by a vapor deposition method such as a vacuum deposition method, a sputtering method, and a CVD (Chemical Vapor Deposition) method.
  • the side of the conversion layer 14 in contact with the pixel 30 is the growth direction base point side of the columnar crystal.
  • the conversion layer 14 can be formed on the sensor substrate 12 by a method different from that of the present embodiment. For example, prepare an aluminum plate or the like on which CsI is vapor-deposited by a vapor phase deposition method, and attach the side of the CsI that is not in contact with the aluminum plate and the pixel 30 of the sensor substrate 12 with an adhesive sheet or the like. As a result, the conversion layer 14 may be formed on the sensor substrate 12. In this case, it is preferable that the entire conversion layer 14 including the aluminum plate is covered with the protective layer 46 and bonded to the pixels 30 of the sensor substrate 12. In this case, the side of the conversion layer 14 in contact with the pixel 30 is the tip side in the growth direction of the columnar crystal.
  • GOS Ga 2 O 2 S: Tb
  • the conversion layer 14 may be used as the conversion layer 14 instead of CsI.
  • a sheet in which GOS is dispersed in a binder such as resin is prepared by bonding a support formed of white PET or the like with an adhesive layer or the like, and the GOS support is not bonded.
  • the conversion layer 14 can be formed on the sensor substrate 12 by sticking the side and the pixels 30 of the sensor substrate 12 with an adhesive sheet or the like.
  • CsI is used for the conversion layer 14 the conversion efficiency from radiation to visible light is higher than when GOS is used.
  • a reflective layer 42 is provided via the adhesive layer 40 on the conversion layer 14 formed on the sensor substrate 12, and a protective layer 46 is provided via the adhesive layer 44.
  • the terminal portion 60 is formed in the terminal region 60A on the first surface 11A of the base material 11.
  • the timing of forming the terminal portion 60 in the terminal region 60A on the base material 11 is not limited to this embodiment.
  • the terminal portion 60 may also be formed during either the step of forming the sensor substrate 12 (FIG. 4A) or the step of forming the conversion layer 14 (FIG. 4B), or the sensor substrate 12 may be formed.
  • the terminal portion 60 may be formed at a timing between the step of forming the conversion layer 14 (FIG. 4A) and the step of forming the conversion layer 14 (FIG. 4B).
  • the cable 112 is thermocompression bonded to the terminal portion 60 via the connection layer 62 to electrically connect the terminal portion 60 and the connection layer 62.
  • the reinforcing member 64 covers the laminated body 63.
  • each of the cable 112A to which the drive board 200 is electrically connected and the cable 112B to which the signal processing board 300 is electrically connected are electrically connected to the terminal portion 60 of the base material 11.
  • the form of connection has been described, the state of the cable 112 electrically connected to the terminal portion 60 of the base material 11 is not limited to this form.
  • the timing of electrically connecting the drive board 200 to the cable 112A and the timing of electrically connecting the cable 112B to the signal processing board 300 are not limited to this embodiment.
  • the drive board 200 may be electrically connected to the cable 112A, and the cable 112B may be electrically connected to the signal processing board 300.
  • the timing of electrically connecting the drive board 200 to the cable 112A and the timing of electrically connecting the cable 112B to the signal processing board 300 may be different.
  • a conversion layer 14 is provided to support the sensor substrate 12 in a state where the cable 112 is electrically connected to the terminal portion 60. Peel off from body 400.
  • any of the four sides of the sensor substrate 12 (base material 11) is set as the starting point of peeling, and the sensor substrate 12 is gradually peeled off from the support 400 from the starting point toward the opposite side. , Perform mechanical peeling.
  • the reinforcing member 50 is attached to the second surface 11B of the base material 11 via the antistatic layer 54 and the adhesive 52 (see FIGS. 3A and 3B).
  • the reinforcing member 50 is formed by attaching or the like.
  • the sensor substrate 12 in which the cable 112 is electrically connected to the terminal portion 60 is placed in a state where the second surface 11B of the substrate 11 is on the upper side, and the bonding device has an alignment function. set.
  • the bonding device identifies the corners of the reinforcing member 50 provided with the adhesive 52 and the antistatic layer 54 and the corners of the second surface 11B of the base material 11 by an alignment function using an image pickup device or the like.
  • the reinforcing member 50 and the sensor substrate 12 (base material 11) are aligned so that both corners overlap.
  • the laminating device moves the roller 410 in the direction of the arrow P in a state where the reinforcing member 50 and the sensor substrate 12 (base material 11) are aligned to move the reinforcing member 50. It is attached to the second surface 11B of the base material 11.
  • the terminals corresponding to the outside of the pixel region 35 in the base material 11 of the laminated body 19 The portion of 60B outside the region is cut.
  • the portion of the laminated body 19 outside the pixel region 35 on the side opposite to the side to which the cable 112B of the base material 11 is electrically connected is cut.
  • the position represented by the cutting line 90 is cut, the end portion of the laminated body 19 is cut off, and the radiation detector 10 is brought into the state shown in FIG. 4H.
  • the cutting line 90 is shown to indicate the cutting position, and is not actually provided on the first surface 11A of the base material 11.
  • the laminated body 19 in which the sensor substrate 12 and the reinforcing member 50 are laminated is set in a cutting device having an alignment function with the first surface 11A of the base material 11 facing up. ..
  • the cutting device detects two alignment marks 92 provided on the first surface 11A of the base material 11 by an alignment function using an imaging device or the like, and determines the cutting line 90 based on the detected alignment marks 92. To do. Then, the cutting device cuts the laminated body 19 along the cutting line 90.
  • the laminated body 19 in which the base material 11 and the reinforcing member 50 are laminated is cut.
  • the cut surface 11C of the base material 11 and the cut surface 50C of the reinforcing member 50 are in a flush state as shown in FIG. 3B.
  • the state in which the cut surface 11C of the base material 11 and the cut surface 50C of the reinforcing member 50 are "parallel” is not limited to the case where the cut surface 11C and the cut surface 50C are completely on the same plane. It refers to a state in which the reinforcing member 50 can be regarded as "facial” by allowing shrinkage, manufacturing error, and the like.
  • the state in which the cut surface 11C of the base material 11 and the cut surface 50C of the reinforcing member 50 are "parallel” means that the cut surface 11C of the base material 11 and the cut surface 11C of the reinforcing member 50 are positioned. It is preferable that the difference is smaller than the difference in position between the side surface 11D of the base material 11 and the side surface 50D of the reinforcing member 50 that occurs when the reinforcing member 50 is attached to the base material 11 as shown in FIG. 3A. Refers to a state of ⁇ 10 ⁇ m.
  • the radiation detectors 10 shown in FIGS. 2 to 3B and 4H are manufactured by the steps shown in FIGS. 4A to 4G.
  • the pixel region 60B outside the pixel region 35 of the laminate 19 in which the base material 11 and the laminate 19 are laminated is cut.
  • the laminated body 19 (base material 11) can be cut up to the vicinity of 35. Therefore, the pixels 30 can be provided near the end of the base material 11 (sensor substrate 12).
  • the pixel area 35 can be set to a position closer to the chest wall of the subject, so that the radiation including the vicinity of the chest wall of the subject is included. It becomes possible to take an image.
  • FIG. 5 is an example of a plan view of the radiation detector 10 of the present embodiment as viewed from the first surface 11A side of the base material 11.
  • 6A is an example of a sectional view taken along line AA of the radiation detector 10 in FIG. 5
  • FIG. 6B is an example of a sectional view taken along line BB of the radiation detector 10 in FIG.
  • the cable 112A is electrically connected to each of the plurality of terminal portions 60 provided on each of the pair of opposite sides of the base material 11 .
  • a plurality of terminal portions 60 are provided only on one side of the base material 11, and a cable 112A is electrically connected to each of them. The point is different.
  • the cut surface 11C of the base material 11 and the cut surface 11C of the reinforcing member 50 are end faces on the terminal region 60A side of the laminated body 19.
  • the side surface 11D of the base material 11 and the side surface 11D of the reinforcing member 50 are end faces on the 60B side outside the terminal region in the laminated body 19.
  • the release layer (not shown) is formed on the support 400 in the same manner as in the step of forming the sensor substrate 12 described in the first embodiment (see FIG. 4A).
  • the base material 11 is formed through the substrate 11.
  • the alignment mark 92 which serves as a mark of the cutting position, is 3 on the first surface 11A of the base material 11.
  • One (alignment marks 92A, 92B, 92C) is provided.
  • the pixel 30 is formed in the pixel region 35 of the terminal region 60B outside the terminal region of the first surface 11A of the base material 11.
  • the conversion layer 14 is formed. Further, on the conversion layer 14 formed on the sensor substrate 12, the reflective layer 42 is provided via the adhesive layer 40, and the protective layer 46 is further provided via the adhesive layer 44.
  • the step of peeling the sensor substrate 12 from the support 400 the same as the step of peeling the sensor substrate 12 from the support 400 described in the first embodiment (see FIG. 4D).
  • the sensor substrate 12 provided with the conversion layer 14 is peeled off from the support 400.
  • the second surface 11B of the base material 11 is charged in the same manner as in the step of providing the reinforcing member 50 of the first embodiment (see FIG. 4E).
  • the reinforcing member 50 is formed by sticking or the like via the prevention layer 54 and the adhesive 52 (see FIGS. 6A and 6B).
  • the terminals corresponding to the outside of the pixel region 35 in the base material 11 of the laminated body 19 A portion of region 60A is cut.
  • the cutting method of the laminated body 19 may be performed in the same manner as the step of cutting the laminated body 19 (see FIGS. 4F and 4G) in the first embodiment.
  • the cutting device cuts the laminated body 19 along the cutting line 90A determined by the alignment mark 92A and the alignment mark 92B, and the cutting line determined by the alignment mark 92B and the alignment mark 92C.
  • the laminate 19 is cut along 90B.
  • the step of electrically connecting the cable 112 to the terminal portion 60 in the step of electrically connecting the cable 112 to the terminal portion 60, the step of electrically connecting the cable 112 described in the first embodiment to the terminal portion 60 (see FIG. 4C).
  • the terminal portion 60 is formed in the terminal region 60A on the first surface 11A of the base material 11.
  • the cable 112 is thermocompression bonded to the terminal portion 60 via the connection layer 62 to electrically connect the terminal portion 60 and the connection layer 62.
  • the reinforcing member 64 covers the laminated body 63.
  • the radiation detector 10 shown in FIGS. 5 to 6B is manufactured by the steps shown in FIGS. 7A to 7G.
  • the terminal portion is cut from the terminal region outside 60B outside the pixel region 35 of the laminate 19 in which the base material 11 and the laminate 19 are laminated.
  • the reinforcing member 50 is provided up to the end of the 60. Therefore, in the process of electrically connecting the cable 112 to the terminal portion 60, the strength of the base material 11 is reinforced by the reinforcing member 50, so that the terminal portion 60 portion is less likely to be damaged.
  • the flexible base material 11 is provided on the support 400, and the pixel region 35 of the base material 11 is subjected to the irradiation of radiation.
  • a step of forming a sensor substrate 12 provided with a plurality of pixels 30 for accumulating charges and a step of peeling the sensor substrate 12 provided with the plurality of pixels 30 from the support 400 are provided.
  • the method of manufacturing the radiation detector 10 includes a step of providing a reinforcing member 50 for reinforcing the strength of the base material 11 on the second surface 11B peeled from the support 400 in the sensor substrate 12, and the reinforcing member 50 and the base material.
  • a step of cutting a portion of the laminated body 19 in which 11 is laminated and corresponding to the outside of the pixel region 35 in the base material 11 is provided.
  • the sensor substrate 12 bends in the step of peeling the sensor substrate 12 from the support 400 in the manufacturing process of the radiation detector 10. Therefore, there is a concern that the pixels 30 near the end of the sensor substrate 12 may be damaged.
  • the laminate 19 of the base material 11 and the reinforcing member 50 is cut.
  • the laminated body 19 can be cut in the vicinity of the pixel region 35 after the sensor substrate 12 is peeled off, so that the pixels 30 are damaged up to the vicinity of the end portion of the sensor substrate 12.
  • the suppressed pixel region 35 can be set.
  • the base material 11 of the sensor substrate 12 has flexibility, it is difficult to cut the base material 11 as it is.
  • the method for manufacturing the radiation detector 10 of each of the above embodiments after the reinforcing member 50 is provided on the base material 11, the laminated body 19 of the base material 11 and the reinforcing member 50 is cut. Since the laminate 19 is thicker and more rigid than the base material 11, the laminate 19 is easier to cut than the base material 11. Therefore, according to the radiation detector 10 of each of the above embodiments, the desired range of the base material 11 (laminated body 19) can be cut without damaging the pixels 30.
  • the method for manufacturing the radiation detector 10 of each of the above embodiments may further include a step of providing a reinforcing layer 48 on the conversion layer 14. That is, the radiation detector 10 may include a reinforcing layer 48.
  • FIG. 8 shows an example of a cross-sectional view of the radiation detector 10 of this modified example, which corresponds to the cross-sectional view taken along the line AA of the radiation detector 10 shown in FIG. 3A.
  • a reinforcing layer 48 is further provided on the conversion layer 14 covered with the protective layer 46.
  • the reinforcing layer 48 has a higher flexural rigidity than the base material 11, and the dimensional change (deformation) with respect to the force applied in the direction perpendicular to the surface facing the conversion layer 14 is caused to the first surface 11A of the base material 11. On the other hand, it is smaller than the dimensional change with respect to the force applied in the vertical direction. Further, the thickness of the reinforcing layer 48 is thicker than that of the base material 11.
  • the reinforcing layer 48 is preferably made of a material having a flexural modulus of 150 MPa or more and 3000 MPa or less.
  • the reinforcing layer 48 preferably has a higher bending rigidity than the base material 11 from the viewpoint of suppressing the bending of the base material 11.
  • the flexural modulus decreases, the flexural rigidity also decreases, and in order to obtain the desired flexural rigidity, the thickness of the reinforcing layer 48 must be increased, and the thickness of the entire radiation detector 10 increases. ..
  • the thickness of the reinforcing layer 48 tends to be relatively thick.
  • the material used for the reinforcing layer 48 preferably has a flexural modulus of 150 MPa or more and 3000 MPa or less. Further, the flexural rigidity of the reinforcing layer 48 is preferably 540 Pacm 4 or more and 140000 Pacm 4 or less.
  • the coefficient of thermal expansion of the reinforcing layer 48 is preferably close to the coefficient of thermal expansion of the material of the conversion layer 14, and more preferably the ratio of the coefficient of thermal expansion of the reinforcing layer 48 to the coefficient of thermal expansion of the conversion layer 14 (reinforcing layer).
  • the coefficient of thermal expansion of 48 / the coefficient of thermal expansion of the conversion layer 14) is preferably 0.5 or more and 2 or less.
  • the coefficient of thermal expansion of such a reinforcing layer 48 is preferably 30 ppm / K or more and 80 ppm / K or less.
  • the coefficient of thermal expansion is 50 ppm / K.
  • examples of the material relatively close to the conversion layer 14 include PVC, acrylic, PET, PC, Teflon (registered trademark) and the like.
  • the material of the reinforcing layer 48 is more preferably a material containing at least one of PET and PC. Further, from the viewpoint of elasticity, the reinforcing layer 48 preferably contains a material having a yield point.
  • the reinforcing layer 48 is a substrate made of plastic.
  • the plastic used as the material of the reinforcing layer 48 is preferably a thermoplastic resin for the reasons described above, and at least one of PC, PET, styrene, acrylic, polyacetase, nylon, polypropylene, ABS, engineering plastic, and polyphenylene ether can be mentioned. Be done.
  • the reinforcing layer 48 is preferably at least one of polypropylene, ABS, engineering plastic, PET, and polyphenylene ether, and more preferably at least one of styrene, acrylic, polyacetase, and nylon. , PC and PET are more preferable.
  • the specific characteristics, materials, and the like of the reinforcing layer 48 and the reinforcing member 50 may be the same or different.
  • the conversion layer 14 When the conversion layer 14 is formed by the vapor phase deposition method, the conversion layer 14 is formed with an inclination that gradually decreases in thickness toward the outer edge thereof, as shown in FIGS. 8 and 3A. Will be done.
  • the central region of the conversion layer 14 in which the thickness can be regarded as substantially constant when manufacturing errors and measurement errors are ignored is referred to as a central portion.
  • an outer peripheral region of the conversion layer 14 having a thickness of, for example, 90% or less of the average thickness of the central portion of the conversion layer 14 is referred to as a peripheral edge portion. That is, the conversion layer 14 has an inclined surface inclined with respect to the sensor substrate 12 at the peripheral edge portion.
  • the reinforcing layer 48 shown in FIG. 8 covers the entire central portion and a part of the peripheral portion of the conversion layer 14. In other words, the outer edge of the reinforcing layer 48 is located on the inclined surface of the peripheral edge of the conversion layer 14.
  • the reinforcing layer 48 may cover the entire conversion layer 14. Further, for example, in FIG. 8, the reinforcing layer 48 is provided in a bent state along the inclined portion of the conversion layer 14, but is formed in a plate shape without bending between the inclined portion of the conversion layer 14 and the reinforcing layer 48. A space may be provided.
  • the step of providing the reinforcing layer 48 on the conversion layer 14 is performed before the sensor substrate 12 is peeled off from the support 400.
  • the strength of the base material 11 is further reinforced.
  • the radiation detector 10 is an indirect conversion type in which the radiation is once converted into light by the conversion layer 14 and the converted light is converted into electric charges. Not limited.
  • the radiation detector 10 may be a direct conversion type that directly converts radiation into electric charges.
  • the direct conversion type radiation detector 10 has a function in which the sensor unit 34 receives radiation and generates an electric charge instead of the conversion layer 14 described above. Examples of the direct conversion type sensor unit 34 include a-Se (amorphous selenium) and crystal CdTe (crystal cadmium telluride).
  • the step of forming the conversion layer 14 shown in FIG. 4B is omitted from the steps described with reference to FIGS. 4A to 4H described above. That is, after the step of forming the sensor substrate 12 shown in FIG. 4A, the step of electrically connecting the cable 112 to the terminal portion 60 shown in FIG. 4C is performed.
  • the protective layer 46 or the like is provided on the pixel 30 (pixel region 35), it is carried out in the step of forming the sensor substrate 12 shown in FIG. 4A.
  • FIGS. 9 to 11 show a radiation imaging apparatus 1 using the radiation detector 10 of the first embodiment.
  • FIG. 9 shows a cross-sectional view of an example of an ISS (Irradiation Side Sampling) type radiation imaging apparatus 1 in which radiation is irradiated from the second surface 11B side of the base material 11.
  • the radiation detector 10, the power supply unit 108, and the control board 110 are provided side by side in the housing 120 in a direction intersecting the incident direction of the radiation.
  • the radiation detector 10 is arranged in a state in which the first surface 11A side of the base material 11 on the sensor substrate 12 faces the irradiation surface 120A side of the housing 120 in which the radiation transmitted through the subject is irradiated.
  • FIG. 10 shows a cross-sectional view of an example of a PSS (Penetration Side Sampling) type radiation imaging apparatus 1 in which radiation is irradiated from the conversion layer 14 side.
  • a radiation detector 10 As shown in FIG. 10, a radiation detector 10, a power supply unit 108, and a control board 110 are provided side by side in the housing 120 in a direction intersecting the incident direction of radiation.
  • the radiation detector 10 is arranged in a state in which the second surface 11B side of the base material 11 on the sensor substrate 12 faces the irradiation surface 120A side of the housing 120 in which the radiation transmitted through the subject is irradiated.
  • control board 110 and the drive board 200 are electrically connected by a cable 220. Further, although the description is omitted in FIGS. 9 and 10, the control board 110 and the signal processing board 300 are electrically connected by a cable.
  • control board 110 is connected by a power supply line 115 to a power supply unit 108 that supplies power to the image memory 106 and the control unit 100 formed on the control board 110.
  • a sheet 116 is further provided in the housing 120 of the radiation imaging apparatus 1 shown in FIGS. 9 and 10 on the side where the radiation transmitted through the radiation detector 10 is emitted.
  • Examples of the sheet 116 include a copper sheet.
  • the copper sheet is less likely to generate secondary radiation due to incident radiation, and therefore has a function of preventing scattering to the rear, that is, to the conversion layer 14 side. It is preferable that the sheet 116 covers at least the entire surface of the conversion layer 14 on the side where the radiation is emitted, and also covers the entire conversion layer 14.
  • a protective layer 117 is further provided on the side where radiation is incident (the irradiation surface 120A side).
  • a moisture-proof film such as an Alpet (registered trademark) sheet, a parylene (registered trademark) film, and an insulating sheet such as polyethylene terephthalate can be applied to the insulating sheet (film).
  • the protective layer 117 has a moisture-proof function and an antistatic function for the pixel region 35. Therefore, the protective layer 117 preferably covers at least the entire surface of the pixel region 35 on the side where the radiation is incident, and preferably covers the entire surface of the sensor substrate 12 on the side where the radiation is incident.
  • the material of the housing 120 is a portion of the housing 120 in which each of the power supply unit 108 and the control board 110 is provided and a portion of the housing 120 in which the radiation detector 10 is provided. It may be different. Further, for example, even if the portion of the housing 120 in which each of the power supply unit 108 and the control board 110 is provided and the portion of the housing 120 in which the radiation detector 10 is provided are configured as separate bodies. Good.
  • the housing 120 is preferably made of a material having a low absorption rate of radiation, particularly X-rays, high rigidity, and a sufficiently high elastic modulus.
  • the portion of the 120 corresponding to the irradiation surface 120A is made of a material having a low radiation absorption rate, high rigidity, and a sufficiently high elastic modulus, and the other parts are different from the portion corresponding to the irradiation surface 120A. It may be composed of a material, for example, a material having a lower elastic modulus than the portion of the irradiation surface 120A.
  • the present invention is not limited to this, and for example, a one-dimensional arrangement may be used or a honeycomb. It may be an array.
  • the shape of the pixel is not limited, and it may be a rectangle or a polygon such as a hexagon. Further, it goes without saying that the shape of the pixel region 35 is not limited.
  • the configuration, manufacturing method, etc. of the radiation imaging device 1 and the radiation detector 10 described in each of the above embodiments are examples, and can be changed according to the situation within a range not deviating from the gist of the present invention. Needless to say.
  • the disclosure of Japanese Patent Application No. 2019-149303 filed August 16, 2019 is incorporated herein by reference in its entirety. All documents, patent applications, and technical standards described herein are to the same extent as if the individual documents, patent applications, and technical standards were specifically and individually stated to be incorporated by reference. Incorporated herein by reference.
  • Radiation imaging device 10 Radiation detector 11 Base material, 11A 1st surface, 11B 2nd surface, 11C Cut surface, 11D Side surface 12 Sensor substrate 14 Conversion layer 19 Laminated body 30 Pixels 32 TFT (switching element) 34 Sensor part 35 Pixel area 36 Signal wiring 38 Scanning wiring 39 Common wiring 40 Adhesive layer 42 Reflective layer 44 Adhesive layer 46 Protective layer 48 Reinforcing layer 50 Reinforcing member, 50C Cut surface, 50D Side surface 52 Adhesive 54 Antistatic layer 60 Terminal part , 60A terminal area, 60B terminal area outside 62 Connection layer 63 Laminated body 64, 65 Reinforcing member 90, 90A, 90B Cutting line 92, 92A to 92C Alignment mark 100 Control unit, 100A CPU, 100B memory, 100C storage unit 102 Drive unit 104 Signal processing unit 106 Image memory 108 Power supply unit 110 Control board 112, 112A, 112B, 220 Cable 115 Power supply line 116 Sheet 117 Protective layer 120 Housing, 120A irradi

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Abstract

Ce procédé de fabrication d'un détecteur de rayonnement comprend : une étape consistant à former un substrat de capteur, dans laquelle un substrat flexible est disposé sur un corps de support, et une pluralité de pixels pour accumuler une charge sur la base d'un rayonnement émis sont disposés dans une région de pixels du substrat ; une étape consistant à décoller le substrat de capteur pourvu de la pluralité de pixels par rapport au corps de support ; une étape consistant à fournir, sur une seconde surface du substrat de capteur, un élément de renforcement destiné à renforcer le substrat, la seconde surface étant la surface décollée du corps de support ; et une étape consistant à découper une partie d'un corps stratifié obtenu par stratification de l'élément de renforcement et du substrat, ladite partie correspondant à une zone à l'extérieur de la région de pixels du substrat. Ce procédé de fabrication d'un détecteur de rayonnement permet d'augmenter facilement les proportions de la région de pixels où les pixels sont formés sur le substrat.
PCT/JP2020/030992 2019-08-16 2020-08-17 Procédé de fabrication d'un détecteur de rayonnement WO2021033663A1 (fr)

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JP2018159612A (ja) * 2017-03-22 2018-10-11 富士フイルム株式会社 放射線検出器及び放射線画像撮影装置
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