WO2021027409A1 - Cellule photovoltaïque hjt à résistance élevée à l'eau - Google Patents

Cellule photovoltaïque hjt à résistance élevée à l'eau Download PDF

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Publication number
WO2021027409A1
WO2021027409A1 PCT/CN2020/098731 CN2020098731W WO2021027409A1 WO 2021027409 A1 WO2021027409 A1 WO 2021027409A1 CN 2020098731 W CN2020098731 W CN 2020098731W WO 2021027409 A1 WO2021027409 A1 WO 2021027409A1
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Prior art keywords
poss
film
modified polymer
coating
polymer film
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PCT/CN2020/098731
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English (en)
Chinese (zh)
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李涛勇
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明冠新材料股份有限公司
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Publication of WO2021027409A1 publication Critical patent/WO2021027409A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of photovoltaic cells, in particular to a high water-resistant HJT monocrystalline silicon/amorphous silicon or microcrystalline silicon photovoltaic cell.
  • HJT is the abbreviation of English heterojunction, which means heterojunction.
  • HJT refers to a heterojunction composed of monocrystalline silicon and amorphous silicon or microcrystalline silicon.
  • HJT photovoltaic cells have become a research hotspot in the field of photovoltaic cell technology because of their simple preparation process and high photoelectric conversion efficiency.
  • the typical structure of the HJT photovoltaic cell is shown in Figure 1.
  • the N-type monocrystalline silicon material is used as the substrate.
  • the cell goes from the substrate to the intrinsic amorphous silicon or microcrystalline silicon layer, and doped amorphous silicon or microcrystalline silicon film.
  • Layer, transparent conductive film and electrode composition Because the process temperature for forming a transparent conductive film is low (about 200°C), while the traditional process for growing a passivation film on a crystalline silicon photovoltaic cell has a high temperature, it is difficult to passivate the existing surface of a crystalline silicon photovoltaic cell.
  • the technology is directly used in HJT photovoltaic cells.
  • POSS is the abbreviation of polyhedral oligomeric silsesquioxane in English, which means polyhedral oligomeric silsesquioxane. It is a kind of organic/inorganic hybrid material with nanostructure.
  • the short form of POSS structure is (RSiO 1.5 ) n , where R stands for organic Group. It can be a reactive group or a non-reactive group.
  • the prior art HJT photovoltaic cell has low mechanical strength and is fragile
  • the purpose of the present invention is to provide a new HJT photovoltaic cell design in view of the shortcomings of the existing technology.
  • the HJT photovoltaic cell is provided with sufficient water vapor protection to obtain a high water resistance HJT photovoltaic cell;
  • Another object of the present invention is to increase the mechanical strength of HJT photovoltaic cells.
  • a high-resistance HJT photovoltaic cell using N-type monocrystalline silicon material as the substrate.
  • the cell On the surface of the substrate, the cell is composed of intrinsic amorphous silicon or microcrystalline silicon layer, doped amorphous silicon or microcrystalline, respectively.
  • the silicon thin film layer, the transparent conductive film and the electrodes are covered with a polymer film modified by polyhedral oligomeric silsesquioxane (POSS) at the outer non-electrode grid lines of the transparent conductive film.
  • PES polyhedral oligomeric silsesquioxane
  • the POSS modified polymer film is formed by coating, crosslinking, and curing the POSS modified polymer coating.
  • the POSS in the coating is a monofunctional POSS, that is, the POSS monomer contains only one active functional group, and the others are inert organic groups.
  • the POSS is grafted to the main chain or side chain of the polymer molecule through reaction to form Pendant polymer in the form of side groups or end groups.
  • the POSS monomer in the coating contains two active functional groups.
  • a block-type polymer is formed in which the POSS monomer is embedded between polymer molecular chains.
  • the POSS modified polymer in the coating is physically modified, that is, the polymer is used as the matrix, the POSS is the filler, and the macroscopically uniform and continuous method is obtained by mechanical simple doping or solution blending. POSS-based composite coating.
  • POSS accounts for 5% to 50% by weight.
  • the formation process of the POSS modified polymer film and the silicon dioxide film includes:
  • Step 1 Coating. Uniformly coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by printing, spin coating, spraying, dipping and other technical methods to form a coating film layer;
  • Step 2 Crosslinking.
  • the coating film layer is crosslinked and cured by ultraviolet rays. Areas that do not require cross-linking and curing are protected by photolithography masks and printing masks;
  • Step 3 Prepare silicon dioxide film.
  • the coating film layer is bombarded with atomic oxygen so that the surface layer loses carbon, hydrogen and other elements, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin layer of SiO 2 .
  • Step 4 Prepare or arrange electrodes.
  • the coating layer that is not cross-linked and solidified at the HJT photovoltaic cell electrode is removed, and the HJT photovoltaic cell electrode is prepared or the existing HJT photovoltaic cell electrode is cleaned.
  • the present invention has the following beneficial effects:
  • the invention can improve the water vapor protection performance of HJT photovoltaic cells. Due to the non-polar molecular structure and compact arrangement of silica, silica film has excellent water vapor protection performance.
  • HJT photovoltaic cells with higher water vapor protection performance are more stable and have a longer service life, which can reduce the requirements for photovoltaic module packaging materials and packaging processes, which is beneficial to reduce the manufacturing cost of photovoltaic modules and improve the design flexibility of photovoltaic modules. Broaden the application fields of photovoltaic modules;
  • the polyhedral oligomeric silsesquioxane (POSS) modified polymer film reacts with atomic oxygen to a thinner film. Therefore, the temperature of HJT photovoltaic cells is relatively low during the formation of silicon dioxide film. Will destroy the PN junction and electrode system of the battery;
  • the polyhedral oligomeric silsesquioxane (POSS) modified polymer film itself has the toughness of a polymer, which is beneficial to absorb the stress acting on the HJT photovoltaic cell.
  • the present invention has better mechanical strength than prior art photovoltaic cells.
  • Fig. 1 is a schematic diagram of the structure of a HJT heterojunction photovoltaic cell with high water resistance according to the present invention
  • FIG. 2 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention
  • FIG. 3 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) as a substituent of the modified polymer end group in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention
  • FIG. 4 is a structural schematic diagram of a polyhedral oligomeric silsesquioxane (POSS) as a side group substituent of a modified polymer in a protective film of a high water-blocking HJT heterojunction photovoltaic cell of the present invention
  • Fig. 5 is a structural schematic diagram of a polyhedral oligomeric silsesquioxane (POSS) as a modified polymer block in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention
  • FIG. 6 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) used as a crosslinking agent in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention
  • N-type substrate monocrystalline silicon wafer 01 N-type substrate monocrystalline silicon wafer 01;
  • Intrinsic amorphous silicon layer 02 Intrinsic amorphous silicon layer 02;
  • N-type amorphous silicon layer 04 N-type amorphous silicon layer 04;
  • Metal oxide conductive film 05
  • the oxygen element 22 in the POSS molecule is the oxygen element 22 in the POSS molecule
  • Non-reactive group 24 in the POSS molecule
  • the first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery.
  • POSS polyhedral oligomeric silsesquioxane
  • the silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05.
  • the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating.
  • the POSS 2 in the coating is a monofunctional POSS, that is, the POSS 2 monomer contains only one active group, and the others are inert groups.
  • the POSS 2 is grafted to one end of the main chain of the polymer molecule 3 through reaction Or in the side chain, a pendant type polymer existing in the polymer in the form of a side group or an end group is formed.
  • the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
  • the formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
  • Step 1 Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a printing method, avoiding the position of the grid line, and forming a coating film layer;
  • Step 2 Crosslinking. Cross-linking and curing the coating film layer by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11;
  • PES polyhedral oligomeric silsesquioxane
  • Step 3 Prepare the silicon dioxide film 12.
  • the coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.
  • the first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery.
  • POSS polyhedral oligomeric silsesquioxane
  • the silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05.
  • the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating.
  • the POSS 2 in the coating is a bifunctional POSS, that is, the POSS 2 monomer contains two active groups, and the others are inert groups.
  • the POSS 2 is connected to the main chain of the polymer molecule 3 through a reaction.
  • the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
  • the formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
  • Step 1 Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a spin coating method to form a coating film layer;
  • Step 2 Crosslinking.
  • the coating film layer is cross-linked and cured by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11.
  • POSS polyhedral oligomeric silsesquioxane
  • a mask is set at the lead-out line of the battery to prevent POSS modified polymer 11 at the mask is cross-linked and cured, and then the film layer that has not been cross-linked and cured is cleaned and removed;
  • Step 3 Prepare the silicon dioxide film 12.
  • the coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses some elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.
  • the first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery.
  • POSS polyhedral oligomeric silsesquioxane
  • the silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05.
  • the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating.
  • the POSS 2 monomer in the coating contains more than three active groups, and the others are inert groups.
  • the POSS 2 acts as a cross-linking agent and is cross-linked and cured to form a polyhedral oligomeric silsesquioxane (POSS) Modified polymer film 11.
  • POSS polyhedral oligomeric silsesquioxane
  • the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
  • the formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
  • Step 1 Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a spin coating method to form a coating film layer;
  • Step 2 Crosslinking.
  • the coating film layer is cross-linked and cured by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11.
  • POSS polyhedral oligomeric silsesquioxane
  • a mask is set at the lead-out line of the battery to prevent the POSS from changing the position.
  • the flexible polymer 11 is cross-linked and cured, and then the film layer that has not been cross-linked and cured is cleaned and removed;
  • Step 3 Prepare the silicon dioxide film 12.
  • the coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses some elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule photovoltaïque HJT à résistance élevée à l'eau, une surface de la cellule photovoltaïque HJT étant recouverte d'un film polymère modifié par un silsesquioxane oligomère polyédrique (POSS), une couche de film mince de dioxyde de silicium étant présente au niveau d'une partie externe du film polymère modifié par POSS. Le film mince de dioxyde de silicium est obtenu au moyen d'une réaction entre l'oxygène atomique et le film polymère modifié par POSS.
PCT/CN2020/098731 2019-08-14 2020-06-29 Cellule photovoltaïque hjt à résistance élevée à l'eau WO2021027409A1 (fr)

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CN201910747626.1 2019-08-14
CN201910747626.1A CN110444613B (zh) 2019-08-14 2019-08-14 一种高阻水hjt光伏电池

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Publication number Priority date Publication date Assignee Title
CN110444613B (zh) * 2019-08-14 2020-12-29 明冠新材料股份有限公司 一种高阻水hjt光伏电池
CN111524988A (zh) * 2020-05-29 2020-08-11 苏州福斯特光伏材料有限公司 一种局部阻水型太阳能电池板及其制备方法

Citations (6)

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CN101142332A (zh) * 2004-09-10 2008-03-12 杂混复合塑料公司 高使用温度的纳米复合树脂
CN103534813A (zh) * 2011-03-21 2014-01-22 阿克伦大学 多面体低聚倍半硅氧烷-有机/聚合二元体和其在有机光伏打电池中的应用
US9373734B1 (en) * 2011-11-02 2016-06-21 Lockheed Martin Corporation High-efficiency solar energy device
CN108475706A (zh) * 2016-03-10 2018-08-31 株式会社钟化 太阳能电池模块
CN109694647A (zh) * 2018-12-26 2019-04-30 中国科学院兰州化学物理研究所 一种具有优异耐空间环境性能的长效固体润滑防护涂料
CN110444613A (zh) * 2019-08-14 2019-11-12 明冠新材料股份有限公司 一种高阻水hjt光伏电池

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EP3170208B1 (fr) * 2014-07-14 2024-06-05 First Solar, Inc. Matériaux et procédés de revêtement pour améliorer la fiabilité

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101142332A (zh) * 2004-09-10 2008-03-12 杂混复合塑料公司 高使用温度的纳米复合树脂
CN103534813A (zh) * 2011-03-21 2014-01-22 阿克伦大学 多面体低聚倍半硅氧烷-有机/聚合二元体和其在有机光伏打电池中的应用
US9373734B1 (en) * 2011-11-02 2016-06-21 Lockheed Martin Corporation High-efficiency solar energy device
CN108475706A (zh) * 2016-03-10 2018-08-31 株式会社钟化 太阳能电池模块
CN109694647A (zh) * 2018-12-26 2019-04-30 中国科学院兰州化学物理研究所 一种具有优异耐空间环境性能的长效固体润滑防护涂料
CN110444613A (zh) * 2019-08-14 2019-11-12 明冠新材料股份有限公司 一种高阻水hjt光伏电池

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