WO2021027409A1 - High-water resistance hjt photovoltaic cell - Google Patents

High-water resistance hjt photovoltaic cell Download PDF

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WO2021027409A1
WO2021027409A1 PCT/CN2020/098731 CN2020098731W WO2021027409A1 WO 2021027409 A1 WO2021027409 A1 WO 2021027409A1 CN 2020098731 W CN2020098731 W CN 2020098731W WO 2021027409 A1 WO2021027409 A1 WO 2021027409A1
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poss
film
modified polymer
coating
polymer film
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李涛勇
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明冠新材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of photovoltaic cells, in particular to a high water-resistant HJT monocrystalline silicon/amorphous silicon or microcrystalline silicon photovoltaic cell.
  • HJT is the abbreviation of English heterojunction, which means heterojunction.
  • HJT refers to a heterojunction composed of monocrystalline silicon and amorphous silicon or microcrystalline silicon.
  • HJT photovoltaic cells have become a research hotspot in the field of photovoltaic cell technology because of their simple preparation process and high photoelectric conversion efficiency.
  • the typical structure of the HJT photovoltaic cell is shown in Figure 1.
  • the N-type monocrystalline silicon material is used as the substrate.
  • the cell goes from the substrate to the intrinsic amorphous silicon or microcrystalline silicon layer, and doped amorphous silicon or microcrystalline silicon film.
  • Layer, transparent conductive film and electrode composition Because the process temperature for forming a transparent conductive film is low (about 200°C), while the traditional process for growing a passivation film on a crystalline silicon photovoltaic cell has a high temperature, it is difficult to passivate the existing surface of a crystalline silicon photovoltaic cell.
  • the technology is directly used in HJT photovoltaic cells.
  • POSS is the abbreviation of polyhedral oligomeric silsesquioxane in English, which means polyhedral oligomeric silsesquioxane. It is a kind of organic/inorganic hybrid material with nanostructure.
  • the short form of POSS structure is (RSiO 1.5 ) n , where R stands for organic Group. It can be a reactive group or a non-reactive group.
  • the prior art HJT photovoltaic cell has low mechanical strength and is fragile
  • the purpose of the present invention is to provide a new HJT photovoltaic cell design in view of the shortcomings of the existing technology.
  • the HJT photovoltaic cell is provided with sufficient water vapor protection to obtain a high water resistance HJT photovoltaic cell;
  • Another object of the present invention is to increase the mechanical strength of HJT photovoltaic cells.
  • a high-resistance HJT photovoltaic cell using N-type monocrystalline silicon material as the substrate.
  • the cell On the surface of the substrate, the cell is composed of intrinsic amorphous silicon or microcrystalline silicon layer, doped amorphous silicon or microcrystalline, respectively.
  • the silicon thin film layer, the transparent conductive film and the electrodes are covered with a polymer film modified by polyhedral oligomeric silsesquioxane (POSS) at the outer non-electrode grid lines of the transparent conductive film.
  • PES polyhedral oligomeric silsesquioxane
  • the POSS modified polymer film is formed by coating, crosslinking, and curing the POSS modified polymer coating.
  • the POSS in the coating is a monofunctional POSS, that is, the POSS monomer contains only one active functional group, and the others are inert organic groups.
  • the POSS is grafted to the main chain or side chain of the polymer molecule through reaction to form Pendant polymer in the form of side groups or end groups.
  • the POSS monomer in the coating contains two active functional groups.
  • a block-type polymer is formed in which the POSS monomer is embedded between polymer molecular chains.
  • the POSS modified polymer in the coating is physically modified, that is, the polymer is used as the matrix, the POSS is the filler, and the macroscopically uniform and continuous method is obtained by mechanical simple doping or solution blending. POSS-based composite coating.
  • POSS accounts for 5% to 50% by weight.
  • the formation process of the POSS modified polymer film and the silicon dioxide film includes:
  • Step 1 Coating. Uniformly coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by printing, spin coating, spraying, dipping and other technical methods to form a coating film layer;
  • Step 2 Crosslinking.
  • the coating film layer is crosslinked and cured by ultraviolet rays. Areas that do not require cross-linking and curing are protected by photolithography masks and printing masks;
  • Step 3 Prepare silicon dioxide film.
  • the coating film layer is bombarded with atomic oxygen so that the surface layer loses carbon, hydrogen and other elements, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin layer of SiO 2 .
  • Step 4 Prepare or arrange electrodes.
  • the coating layer that is not cross-linked and solidified at the HJT photovoltaic cell electrode is removed, and the HJT photovoltaic cell electrode is prepared or the existing HJT photovoltaic cell electrode is cleaned.
  • the present invention has the following beneficial effects:
  • the invention can improve the water vapor protection performance of HJT photovoltaic cells. Due to the non-polar molecular structure and compact arrangement of silica, silica film has excellent water vapor protection performance.
  • HJT photovoltaic cells with higher water vapor protection performance are more stable and have a longer service life, which can reduce the requirements for photovoltaic module packaging materials and packaging processes, which is beneficial to reduce the manufacturing cost of photovoltaic modules and improve the design flexibility of photovoltaic modules. Broaden the application fields of photovoltaic modules;
  • the polyhedral oligomeric silsesquioxane (POSS) modified polymer film reacts with atomic oxygen to a thinner film. Therefore, the temperature of HJT photovoltaic cells is relatively low during the formation of silicon dioxide film. Will destroy the PN junction and electrode system of the battery;
  • the polyhedral oligomeric silsesquioxane (POSS) modified polymer film itself has the toughness of a polymer, which is beneficial to absorb the stress acting on the HJT photovoltaic cell.
  • the present invention has better mechanical strength than prior art photovoltaic cells.
  • Fig. 1 is a schematic diagram of the structure of a HJT heterojunction photovoltaic cell with high water resistance according to the present invention
  • FIG. 2 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention
  • FIG. 3 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) as a substituent of the modified polymer end group in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention
  • FIG. 4 is a structural schematic diagram of a polyhedral oligomeric silsesquioxane (POSS) as a side group substituent of a modified polymer in a protective film of a high water-blocking HJT heterojunction photovoltaic cell of the present invention
  • Fig. 5 is a structural schematic diagram of a polyhedral oligomeric silsesquioxane (POSS) as a modified polymer block in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention
  • FIG. 6 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) used as a crosslinking agent in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention
  • N-type substrate monocrystalline silicon wafer 01 N-type substrate monocrystalline silicon wafer 01;
  • Intrinsic amorphous silicon layer 02 Intrinsic amorphous silicon layer 02;
  • N-type amorphous silicon layer 04 N-type amorphous silicon layer 04;
  • Metal oxide conductive film 05
  • the oxygen element 22 in the POSS molecule is the oxygen element 22 in the POSS molecule
  • Non-reactive group 24 in the POSS molecule
  • the first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery.
  • POSS polyhedral oligomeric silsesquioxane
  • the silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05.
  • the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating.
  • the POSS 2 in the coating is a monofunctional POSS, that is, the POSS 2 monomer contains only one active group, and the others are inert groups.
  • the POSS 2 is grafted to one end of the main chain of the polymer molecule 3 through reaction Or in the side chain, a pendant type polymer existing in the polymer in the form of a side group or an end group is formed.
  • the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
  • the formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
  • Step 1 Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a printing method, avoiding the position of the grid line, and forming a coating film layer;
  • Step 2 Crosslinking. Cross-linking and curing the coating film layer by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11;
  • PES polyhedral oligomeric silsesquioxane
  • Step 3 Prepare the silicon dioxide film 12.
  • the coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.
  • the first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery.
  • POSS polyhedral oligomeric silsesquioxane
  • the silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05.
  • the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating.
  • the POSS 2 in the coating is a bifunctional POSS, that is, the POSS 2 monomer contains two active groups, and the others are inert groups.
  • the POSS 2 is connected to the main chain of the polymer molecule 3 through a reaction.
  • the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
  • the formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
  • Step 1 Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a spin coating method to form a coating film layer;
  • Step 2 Crosslinking.
  • the coating film layer is cross-linked and cured by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11.
  • POSS polyhedral oligomeric silsesquioxane
  • a mask is set at the lead-out line of the battery to prevent POSS modified polymer 11 at the mask is cross-linked and cured, and then the film layer that has not been cross-linked and cured is cleaned and removed;
  • Step 3 Prepare the silicon dioxide film 12.
  • the coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses some elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.
  • the first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery.
  • POSS polyhedral oligomeric silsesquioxane
  • the silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05.
  • the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating.
  • the POSS 2 monomer in the coating contains more than three active groups, and the others are inert groups.
  • the POSS 2 acts as a cross-linking agent and is cross-linked and cured to form a polyhedral oligomeric silsesquioxane (POSS) Modified polymer film 11.
  • POSS polyhedral oligomeric silsesquioxane
  • the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
  • the formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
  • Step 1 Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a spin coating method to form a coating film layer;
  • Step 2 Crosslinking.
  • the coating film layer is cross-linked and cured by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11.
  • POSS polyhedral oligomeric silsesquioxane
  • a mask is set at the lead-out line of the battery to prevent the POSS from changing the position.
  • the flexible polymer 11 is cross-linked and cured, and then the film layer that has not been cross-linked and cured is cleaned and removed;
  • Step 3 Prepare the silicon dioxide film 12.
  • the coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses some elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.

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Abstract

A high-water resistance HJT photovoltaic cell, a surface of the HJT photovoltaic cell being covered with a polyhedral oligomeric silsesquioxane (POSS) modified polymer film, there being a layer of silicon dioxide thin film at an outer part of the POSS modified polymer film. The silicon dioxide thin film being obtained by means of a reaction between atomic oxygen and the POSS modified polymer film.

Description

一种高阻水HJT光伏电池A kind of high water resistance HJT photovoltaic cell 技术领域Technical field
本发明涉及光伏电池技术领域，具体涉及一种高阻水HJT单晶硅/非晶硅或微晶硅光伏电池。The invention relates to the technical field of photovoltaic cells, in particular to a high water-resistant HJT monocrystalline silicon/amorphous silicon or microcrystalline silicon photovoltaic cell.
背景技术Background technique
HJT是英文hetero junction的缩写，意为异质结。在本专利中HJT指以单晶硅和非晶硅或微晶硅组成的异质结。HJT光伏电池以其制备工艺简单、光电转换效率高已经成为光伏电池技术领域研究的热点。HJT is the abbreviation of English heterojunction, which means heterojunction. In this patent, HJT refers to a heterojunction composed of monocrystalline silicon and amorphous silicon or microcrystalline silicon. HJT photovoltaic cells have become a research hotspot in the field of photovoltaic cell technology because of their simple preparation process and high photoelectric conversion efficiency.
HJT光伏电池的典型结构见图1，以N型单晶硅材料为衬底，电池由衬底向外依次为本征非晶硅或微晶硅层、掺杂非晶硅或微晶硅薄膜层、透明导电膜和电极组成。由于形成透明导电膜的工艺温度较低(200℃左右)，而传统的在晶体硅光伏电池生长钝化膜的工艺温度较高，因此，很难将已有的对晶体硅光伏电池表面钝化技术直接用于HJT光伏电池。失去了电池表面钝化膜的保护，使得HJT电池的水汽防护性能很差，所以不得不对封装材料和封装技术提出更高的要求，比如采用双面玻璃封装、边缘用丁基胶密封。结果使得封装成本提高、组件重量增加、安装成本上升、使用灵活性下降。The typical structure of the HJT photovoltaic cell is shown in Figure 1. The N-type monocrystalline silicon material is used as the substrate. The cell goes from the substrate to the intrinsic amorphous silicon or microcrystalline silicon layer, and doped amorphous silicon or microcrystalline silicon film. Layer, transparent conductive film and electrode composition. Because the process temperature for forming a transparent conductive film is low (about 200°C), while the traditional process for growing a passivation film on a crystalline silicon photovoltaic cell has a high temperature, it is difficult to passivate the existing surface of a crystalline silicon photovoltaic cell. The technology is directly used in HJT photovoltaic cells. The loss of the protection of the passivation film on the battery surface makes the water vapor protection performance of the HJT battery very poor, so higher requirements have to be put forward on the packaging materials and packaging technology, such as the use of double-sided glass packaging and the edge sealing with butyl glue. As a result, packaging costs increase, component weight increases, installation costs increase, and usage flexibility decreases.
POSS是英文polyhedral oligomeric silsesquioxane的缩写，意为多面体低聚倍半硅氧烷，是一种具有纳米结构的有机/无机杂化材料，POSS结构简式为(RSiO 1.5) n，其中的R表示有机基团。可以是反应性基团或非反应性基团。n一般为6、8、10、12等，其中又以n＝8最为常见、最典型的多面体低聚倍半硅氧烷，其分子结构示意图见图2。由于POSS特殊的纳米、有机无机杂化以及中空笼型的结构特点，以及可以在分子水平上对聚合物改性，使无机和有机组分充分杂化，故不仅保留了高分子材料优良的加工性、韧性与低成本等特性，同时又具有无机材料突出的耐热、耐氧化性、可设计的介电性以及优异的力学性能。 POSS is the abbreviation of polyhedral oligomeric silsesquioxane in English, which means polyhedral oligomeric silsesquioxane. It is a kind of organic/inorganic hybrid material with nanostructure. The short form of POSS structure is (RSiO 1.5 ) n , where R stands for organic Group. It can be a reactive group or a non-reactive group. n is generally 6, 8, 10, 12, etc. Among them, n=8 is the most common and typical polyhedral oligomeric silsesquioxane, and its molecular structure is shown in Figure 2. Due to the special nano, organic-inorganic hybrid and hollow cage structural characteristics of POSS, as well as the ability to modify the polymer at the molecular level to fully hybridize the inorganic and organic components, it not only retains the excellent processing of polymer materials Features such as flexibility, toughness and low cost, but also has outstanding heat resistance, oxidation resistance, designable dielectric properties and excellent mechanical properties of inorganic materials.
然而将POSS改性的聚合物涂料简单地涂覆到HJT光伏电池的表面，对 HJT光伏电池水汽防护能力的提高还不能达到期望的要求。However, simply applying POSS-modified polymer coatings to the surface of HJT photovoltaic cells cannot achieve the desired requirements for the improvement of HJT photovoltaic cells' water vapor protection capabilities.
现有技术的不足在于：The disadvantages of the existing technology are:
1)HJT光伏电池的水汽防护能力差，在水汽的作用下，HJT光伏电池的PN结容易退化、电池电极系统容易失效；1) The water vapor protection of HJT photovoltaic cells is poor. Under the action of water vapor, the PN junction of HJT photovoltaic cells is prone to degradation and the battery electrode system is prone to failure;
2)与本发明相比，现有技术的HJT光伏电池的机械强度低，易碎；2) Compared with the present invention, the prior art HJT photovoltaic cell has low mechanical strength and is fragile;
3)现有技术的POSS改性的聚合物涂料的水汽防护能力偏低。3) The prior art POSS modified polymer coating has a low water vapor protection capability.
发明内容Summary of the invention
本发明的目的在于针对现有技术的不足，给出一种新的HJT光伏电池的设计，通过增设HJT光伏电池表面防护膜，为HJT光伏电池提供足够的水汽防护，得到一种高阻水的HJT光伏电池；The purpose of the present invention is to provide a new HJT photovoltaic cell design in view of the shortcomings of the existing technology. By adding a HJT photovoltaic cell surface protection film, the HJT photovoltaic cell is provided with sufficient water vapor protection to obtain a high water resistance HJT photovoltaic cell;
本发明的另一个目的在于增加HJT光伏电池的机械强度。Another object of the present invention is to increase the mechanical strength of HJT photovoltaic cells.
为了实现上述目的，本发明采用如下技术方案：In order to achieve the above objectives, the present invention adopts the following technical solutions:
一种高阻水HJT光伏电池，以N型单晶硅材料为衬底，在衬底表面，电池由内向外分别是本征非晶硅或微晶硅层、掺杂非晶硅或微晶硅薄膜层，透明导电膜和电极，在所述透明导电膜的外部非电极栅线处，覆盖有经多面体低聚倍半硅氧烷(POSS)改性的聚合物膜，在所述POSS改性聚合物膜的外部，有一层二氧化硅薄膜。A high-resistance HJT photovoltaic cell, using N-type monocrystalline silicon material as the substrate. On the surface of the substrate, the cell is composed of intrinsic amorphous silicon or microcrystalline silicon layer, doped amorphous silicon or microcrystalline, respectively. The silicon thin film layer, the transparent conductive film and the electrodes are covered with a polymer film modified by polyhedral oligomeric silsesquioxane (POSS) at the outer non-electrode grid lines of the transparent conductive film. On the outside of the flexible polymer film, there is a silicon dioxide film.
进一步地，所述POSS改性聚合物膜是由POSS改性聚合物涂料经涂覆、交联、固化形成的。所述涂料中的POSS为单官能团POSS，即POSS单体中只含有一个活性官能团，其他为惰性有机基团，通过反应将所述POSS接枝到聚合物分子的主链或侧链中，形成以侧基或端基的形式存在于聚合物中的悬垂型聚合物。Further, the POSS modified polymer film is formed by coating, crosslinking, and curing the POSS modified polymer coating. The POSS in the coating is a monofunctional POSS, that is, the POSS monomer contains only one active functional group, and the others are inert organic groups. The POSS is grafted to the main chain or side chain of the polymer molecule through reaction to form Pendant polymer in the form of side groups or end groups.
进一步地，所述涂料中的POSS单体中含有两个活性官能团。通过嵌段改性形成将所述POSS单体嵌入到聚合物分子链之间的嵌段型聚合物。Further, the POSS monomer in the coating contains two active functional groups. Through block modification, a block-type polymer is formed in which the POSS monomer is embedded between polymer molecular chains.
进一步地，所述涂料中的POSS改性聚合物为物理改性，即以聚合物为基体，所述POSS为填料，通过机械的简单掺杂或溶液共混等方法得到宏观上均匀、连续的POSS基复合涂料。Further, the POSS modified polymer in the coating is physically modified, that is, the polymer is used as the matrix, the POSS is the filler, and the macroscopically uniform and continuous method is obtained by mechanical simple doping or solution blending. POSS-based composite coating.
进一步地，所述POSS改性聚合物膜中，POSS所占的重量百分比为5％～50％。Further, in the POSS modified polymer film, POSS accounts for 5% to 50% by weight.
进一步地，POSS改性聚合物膜和所述二氧化硅薄膜的形成过程包括：Further, the formation process of the POSS modified polymer film and the silicon dioxide film includes:
步骤一：涂覆。将非交联态的POSS改性聚合物涂料，通过印刷、旋涂、喷涂、浸渍等技术方法均匀涂覆于所述HJT光伏电池的表面，形成一层涂料膜层；Step 1: Coating. Uniformly coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by printing, spin coating, spraying, dipping and other technical methods to form a coating film layer;
步骤二：交联。通过紫外线使所述涂料膜层交联、固化。不需要交联、固化的区域则借助于光刻掩膜、印刷掩膜加以保护；Step 2: Crosslinking. The coating film layer is crosslinked and cured by ultraviolet rays. Areas that do not require cross-linking and curing are protected by photolithography masks and printing masks;
步骤三：制备二氧化硅膜。用原子态氧轰击处理所述涂料膜层使之表层失去碳、氢等元素，表层裸露的Si-O-Si键与原子氧反应，转化为SiO 2薄层。 Step 3: Prepare silicon dioxide film. The coating film layer is bombarded with atomic oxygen so that the surface layer loses carbon, hydrogen and other elements, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin layer of SiO 2 .
步骤四：制备或整理电极。去除所述HJT光伏电池电极处没有交联固化的涂料层，制备HJT光伏电池电极或清理已有的HJT光伏电池电极。Step 4: Prepare or arrange electrodes. The coating layer that is not cross-linked and solidified at the HJT photovoltaic cell electrode is removed, and the HJT photovoltaic cell electrode is prepared or the existing HJT photovoltaic cell electrode is cleaned.
本发明与现有技术相比较，有益效果在于：Compared with the prior art, the present invention has the following beneficial effects:
1)本发明可以提高HJT光伏电池的水汽防护性能。由于二氧化硅非极性的分子结构和较紧密的排列，因此，二氧化硅膜具有优良的水汽防护性能。1) The invention can improve the water vapor protection performance of HJT photovoltaic cells. Due to the non-polar molecular structure and compact arrangement of silica, silica film has excellent water vapor protection performance.
具有较高水汽防护性能的HJT光伏电池更稳定，具有较长的使用寿命，可以降低对光伏组件封装材料和封装工艺的要求，有利于降低光伏组件的制造成本，提高光伏组件的设计灵活性，拓宽光伏组件的应用领域；HJT photovoltaic cells with higher water vapor protection performance are more stable and have a longer service life, which can reduce the requirements for photovoltaic module packaging materials and packaging processes, which is beneficial to reduce the manufacturing cost of photovoltaic modules and improve the design flexibility of photovoltaic modules. Broaden the application fields of photovoltaic modules;
2)多面体低聚倍半硅氧烷(POSS)改性的聚合物膜与原子氧反应的膜层较薄，因此在形成二氧化硅膜的过程中，HJT光伏电池片的温度较低，不会破坏电池的PN结和电极系统；2) The polyhedral oligomeric silsesquioxane (POSS) modified polymer film reacts with atomic oxygen to a thinner film. Therefore, the temperature of HJT photovoltaic cells is relatively low during the formation of silicon dioxide film. Will destroy the PN junction and electrode system of the battery;
3)多面体低聚倍半硅氧烷(POSS)改性的聚合物膜本身具有高分子聚合物的韧性，有利于吸收作用于HJT光伏电池上的应力，同时由于本发明光伏电池的对称结构，因此本发明较现有技术光伏电池具有较好的机械强度。3) The polyhedral oligomeric silsesquioxane (POSS) modified polymer film itself has the toughness of a polymer, which is beneficial to absorb the stress acting on the HJT photovoltaic cell. At the same time, due to the symmetrical structure of the photovoltaic cell of the present invention, Therefore, the present invention has better mechanical strength than prior art photovoltaic cells.
附图说明Description of the drawings
图1是本发明一种高阻水的HJT异质结光伏电池结构示意图；Fig. 1 is a schematic diagram of the structure of a HJT heterojunction photovoltaic cell with high water resistance according to the present invention;
图2是本发明一种高阻水的HJT异质结光伏电池保护膜中多面体低聚倍半硅氧烷(POSS)的结构示意图；2 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention;
图3是本发明一种高阻水的HJT异质结光伏电池保护膜中多面体低聚倍半硅氧烷(POSS)作为改性聚合物端基取代基的结构示意图；3 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) as a substituent of the modified polymer end group in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention;
图4是本发明一种高阻水的HJT异质结光伏电池保护膜中多面体低聚倍半硅氧烷(POSS)作为改性聚合物侧基取代基的结构示意图；4 is a structural schematic diagram of a polyhedral oligomeric silsesquioxane (POSS) as a side group substituent of a modified polymer in a protective film of a high water-blocking HJT heterojunction photovoltaic cell of the present invention;
图5是本发明一种高阻水的HJT异质结光伏电池保护膜中多面体低聚倍半硅氧烷(POSS)作为改性聚合物嵌段的结构示意图；Fig. 5 is a structural schematic diagram of a polyhedral oligomeric silsesquioxane (POSS) as a modified polymer block in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention;
图6是本发明一种高阻水的HJT异质结光伏电池保护膜中多面体低聚倍半硅氧烷(POSS)作为交联剂的结构示意图；6 is a schematic diagram of the structure of a polyhedral oligomeric silsesquioxane (POSS) used as a crosslinking agent in a high water-resistant HJT heterojunction photovoltaic cell protective film of the present invention;
附图标记：Reference signs:
N型衬底单晶硅片01；N-type substrate monocrystalline silicon wafer 01;
本征非晶硅层02；Intrinsic amorphous silicon layer 02;
P型非晶硅层03；P-type amorphous silicon layer 03;
N型非晶硅层04；N-type amorphous silicon layer 04;
金属氧化物导电膜05；Metal oxide conductive film 05;
正电极栅线06；Positive electrode grid line 06;
负电极栅线07；Negative electrode grid line 07;
POSS改性聚合物膜11；POSS modified polymer film 11;
SiO 2薄层12； SiO 2 thin layer 12;
POSS分子中的硅元素21； Silicon element 21 in the POSS molecule;
POSS分子中的氧元素22；The oxygen element 22 in the POSS molecule;
POSS分子中的反应基团23；The reactive group 23 in the POSS molecule;
POSS分子中的非反应基团24； Non-reactive group 24 in the POSS molecule;
笼形POSS 2； Cage POSS 2;
聚合物分子链3.Polymer molecular chain 3.
具体实施方式detailed description
为了使本发明所解决的技术问题、技术方案及有益效果更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the technical problems, technical solutions, and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.
实施例1。Example 1.
结合附图1、附图2、附图3、附图4。Combined with Figure 1, Figure 2, Figure 3, Figure 4.
一种高阻水HJT光伏电池，由N型衬底单晶硅片01的第一表面，向电池的正极方向由内向外包含有本征非晶硅膜层02、P型掺杂非晶硅膜层03，透明导电膜05和正电极栅线06，在所述透明导电膜05的外部非正电极栅线06 处，覆盖有经多面体低聚倍半硅氧烷(POSS)改性聚合物膜11，在所述POSS改性的聚合物膜11的外部，有一层二氧化硅薄膜12；由N型衬底单晶硅片01的第二表面向电池的负极方向由内向外包含有本征非晶硅膜层02、N型掺杂非晶硅膜层04，透明导电膜05和负电极栅线07，在所述透明导电膜05的外部非负电极栅线07处，覆盖有经多面体低聚倍半硅氧烷(POSS)改性的聚合物膜11，在所述POSS改性聚合物膜11的外部，有一层二氧化硅薄膜12；。A high-resistance HJT photovoltaic cell. The first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery. Layer 03, transparent conductive film 05 and positive electrode grid line 06, at the outer non-positive electrode grid line 06 of said transparent conductive film 05, covered with polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11 , On the outside of the POSS modified polymer film 11, there is a layer of silicon dioxide film 12; from the second surface of the N-type substrate monocrystalline silicon wafer 01 toward the negative electrode of the battery, it contains intrinsic amorphous The silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05. A silsesquioxane (POSS) modified polymer film 11, on the outside of the POSS modified polymer film 11, there is a silicon dioxide film 12;
其中，所述POSS改性聚合物膜11是由POSS改性聚合物涂料经涂覆、交联、固化形成的。所述涂料中的POSS 2为单官能团POSS，即POSS 2单体中只含有一个活性基团，其他为惰性基团，通过反应将所述POSS 2接枝到聚合物分子3的主链的一端或侧链中，形成以侧基或端基的形式存在于聚合物中的悬垂型聚合物。Wherein, the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating. The POSS 2 in the coating is a monofunctional POSS, that is, the POSS 2 monomer contains only one active group, and the others are inert groups. The POSS 2 is grafted to one end of the main chain of the polymer molecule 3 through reaction Or in the side chain, a pendant type polymer existing in the polymer in the form of a side group or an end group is formed.
其中，所述POSS改性聚合物膜11中，POSS所占的重量百分比为5％～50％。Wherein, the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
POSS改性聚合物膜11和膜外二氧化硅薄膜12的形成过程如下：The formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
步骤一：涂覆。将非交联态的POSS改性聚合物涂料，通过印刷的方法涂覆于所述HJT光伏电池的表面，避开栅线位置，形成一层涂料膜层；Step 1: Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a printing method, avoiding the position of the grid line, and forming a coating film layer;
步骤二：交联。通过紫外线使所述涂料膜层交联、固化，形成经多面体低聚倍半硅氧烷(POSS)改性聚合物膜11；Step 2: Crosslinking. Cross-linking and curing the coating film layer by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11;
步骤三：制备二氧化硅膜12。用原子态氧轰击处理所述涂料膜层11，使之表层失去碳、氢等元素，表层裸露的Si-O-Si键与原子氧反应，转化为SiO 2薄层12。 Step 3: Prepare the silicon dioxide film 12. The coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.
实施例2。Example 2.
结合附图1、附图2、附图5、。Combined with Figure 1, Figure 2, Figure 5.
一种高阻水HJT光伏电池，由N型衬底单晶硅片01的第一表面，向电池的正极方向由内向外包含有本征非晶硅膜层02、P型掺杂非晶硅膜层03，透明导电膜05和正电极栅线06，在所述透明导电膜05的外部非正电极栅线06处，覆盖有经多面体低聚倍半硅氧烷(POSS)改性聚合物膜11，在所述POSS改性的聚合物膜11的外部，有一层二氧化硅薄膜12；由N型衬底单晶硅片01的第二表面向电池的负极方向由内向外包含有本征非晶硅膜层02、N型掺杂非 晶硅膜层04，透明导电膜05和负电极栅线07，在所述透明导电膜05的外部非负电极栅线07处，覆盖有经多面体低聚倍半硅氧烷(POSS)改性的聚合物膜11，在所述POSS改性聚合物膜11的外部，有一层二氧化硅薄膜12；。A high-resistance HJT photovoltaic cell. The first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery. Layer 03, transparent conductive film 05 and positive electrode grid line 06, on the outer non-positive electrode grid line 06 of the transparent conductive film 05, covered with polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11 , On the outside of the POSS modified polymer film 11, there is a layer of silicon dioxide film 12; from the second surface of the N-type substrate monocrystalline silicon wafer 01 toward the negative electrode of the battery, it contains intrinsic amorphous The silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05. A silsesquioxane (POSS) modified polymer film 11, on the outside of the POSS modified polymer film 11, there is a silicon dioxide film 12;
其中，所述POSS改性聚合物膜11是由POSS改性聚合物涂料经涂覆、交联、固化形成的。所述涂料中的POSS 2为双官能团POSS，即POSS 2单体中含有两个活性基团，其他为惰性基团，通过反应将所述POSS 2连接到聚合物分子3的主链中。Wherein, the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating. The POSS 2 in the coating is a bifunctional POSS, that is, the POSS 2 monomer contains two active groups, and the others are inert groups. The POSS 2 is connected to the main chain of the polymer molecule 3 through a reaction.
其中，所述POSS改性聚合物膜11中，POSS所占的重量百分比为5％～50％。Wherein, the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
POSS改性聚合物膜11和膜外二氧化硅薄膜12的形成过程如下：The formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
步骤一：涂覆。将非交联态的POSS改性聚合物涂料，通过旋涂的方法涂覆于所述HJT光伏电池的表面，形成一层涂料膜层；Step 1: Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a spin coating method to form a coating film layer;
步骤二：交联。通过紫外线使所述涂料膜层交联、固化，形成经多面体低聚倍半硅氧烷(POSS)改性聚合物膜11，交联、固化过程中，电池引出线部位设置掩膜，不使掩膜处POSS改性聚合物11交联固化，然后，清洗去除没有交联固化的膜层；Step 2: Crosslinking. The coating film layer is cross-linked and cured by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11. During the cross-linking and curing process, a mask is set at the lead-out line of the battery to prevent POSS modified polymer 11 at the mask is cross-linked and cured, and then the film layer that has not been cross-linked and cured is cleaned and removed;
步骤三：制备二氧化硅膜12。用原子态氧轰击处理所述涂料膜层11，使之表层失去部分碳、氢等元素，表层裸露的Si-O-Si键与原子氧反应，转化为SiO 2薄层12。 Step 3: Prepare the silicon dioxide film 12. The coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses some elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.
实施例3。Example 3.
结合附图1、附图2、附图6、。Combined with Figure 1, Figure 2, Figure 6.
一种高阻水HJT光伏电池，由N型衬底单晶硅片01的第一表面，向电池的正极方向由内向外包含有本征非晶硅膜层02、P型掺杂非晶硅膜层03，透明导电膜05和正电极栅线06，在所述透明导电膜05的外部非正电极栅线06处，覆盖有经多面体低聚倍半硅氧烷(POSS)改性聚合物膜11，在所述POSS改性的聚合物膜11的外部，有一层二氧化硅薄膜12；由N型衬底单晶硅片01的第二表面向电池的负极方向由内向外包含有本征非晶硅膜层02、N型掺杂非晶硅膜层04，透明导电膜05和负电极栅线07，在所述透明导电膜05的外部非负电极栅线07处，覆盖有经多面体低聚倍半硅氧烷(POSS)改性的聚合物 膜11，在所述POSS改性聚合物膜11的外部，有一层二氧化硅薄膜12；。A high-resistance HJT photovoltaic cell. The first surface of the monocrystalline silicon wafer 01 with an N-type substrate includes an intrinsic amorphous silicon film layer 02 and a P-type doped amorphous silicon film from the inside to the outside toward the positive electrode of the battery. Layer 03, transparent conductive film 05 and positive electrode grid line 06, on the outer non-positive electrode grid line 06 of the transparent conductive film 05, covered with polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11 , On the outside of the POSS modified polymer film 11, there is a layer of silicon dioxide film 12; from the second surface of the N-type substrate monocrystalline silicon wafer 01 toward the negative electrode of the battery, it contains intrinsic amorphous The silicon film layer 02, the N-type doped amorphous silicon film layer 04, the transparent conductive film 05, and the negative electrode gate line 07 are covered by the polyhedral oligomer at the outer non-negative electrode gate line 07 of the transparent conductive film 05. A silsesquioxane (POSS) modified polymer film 11, on the outside of the POSS modified polymer film 11, there is a silicon dioxide film 12;
其中，所述POSS改性聚合物膜11是由POSS改性聚合物涂料经涂覆、交联、固化形成的。所述涂料中的POSS 2单体中包含三个以上的活性基团，其他为惰性基团，所述POSS 2起交联剂作用，经交联、固化形成经多面体低聚倍半硅氧烷(POSS)改性的聚合物膜11。Wherein, the POSS modified polymer film 11 is formed by coating, crosslinking, and curing the POSS modified polymer coating. The POSS 2 monomer in the coating contains more than three active groups, and the others are inert groups. The POSS 2 acts as a cross-linking agent and is cross-linked and cured to form a polyhedral oligomeric silsesquioxane (POSS) Modified polymer film 11.
其中，所述POSS改性聚合物膜11中，POSS所占的重量百分比为5％～50％。Wherein, the weight percentage of POSS in the POSS modified polymer film 11 is 5% to 50%.
POSS改性聚合物膜11和膜外二氧化硅薄膜12的形成过程如下：The formation process of the POSS modified polymer film 11 and the outer silica film 12 is as follows:
步骤一：涂覆。将非交联态的POSS改性聚合物涂料，通过旋涂的方法涂覆于所述HJT光伏电池的表面，形成一层涂料膜层；Step 1: Coating. Coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by a spin coating method to form a coating film layer;
步骤二：交联。通过紫外线使所述涂料膜层交联、固化，形成经多面体低聚倍半硅氧烷(POSS)改性聚合物膜11，过程中，电池引出线部位设置掩膜，不使该部位POSS改性聚合物11交联固化，然后，清洗去除没有交联固化的膜层；Step 2: Crosslinking. The coating film layer is cross-linked and cured by ultraviolet rays to form a polyhedral oligomeric silsesquioxane (POSS) modified polymer film 11. In the process, a mask is set at the lead-out line of the battery to prevent the POSS from changing the position. The flexible polymer 11 is cross-linked and cured, and then the film layer that has not been cross-linked and cured is cleaned and removed;
步骤三：制备二氧化硅膜12。用原子态氧轰击处理所述涂料膜层11，使之表层失去部分碳、氢等元素，表层裸露的Si-O-Si键与原子氧反应，转化为SiO 2薄层12。 Step 3: Prepare the silicon dioxide film 12. The coating film layer 11 is bombarded with atomic oxygen, so that the surface layer loses some elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer 12.
以上实施例仅用以说明本发明的技术方案，而非对本发明保护范围的限制，尽管参照实施例对本发明作了详细地说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。The above embodiments are only used to illustrate the technical solutions of the present invention, not to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be implemented Modification or equivalent replacement without departing from the essence and scope of the technical solution of the present invention.

Claims (6)

  1. 一种高阻水HJT光伏电池，以单晶硅材料为衬底，电池由内向外由本征非晶硅或微晶硅层、掺杂非晶硅或微晶硅薄膜层，透明导电膜和电极组成，其特征在于：在所述透明导电膜的外部非电极栅线处，覆盖有经多面体低聚倍半硅氧烷(POSS)改性的聚合物膜，所述POSS改性聚合物膜中POSS为单官能团POSS，将所述单官能团POSS接枝到聚合物分子的主链或侧链中，形成以侧基或端基的形式存在于聚合物中的悬垂型聚合物，在所述POSS改性聚合物膜的外部，有一层二氧化硅薄膜。A high-resistance HJT photovoltaic cell with monocrystalline silicon material as the substrate. The cell consists of intrinsic amorphous silicon or microcrystalline silicon layer, doped amorphous silicon or microcrystalline silicon film layer, transparent conductive film and electrodes from the inside to the outside. The composition is characterized in that the outer non-electrode grid lines of the transparent conductive film are covered with a polymer film modified by polyhedral oligomeric silsesquioxane (POSS), and the POSS modified polymer film POSS is a monofunctional POSS, and the monofunctional POSS is grafted to the main chain or side chain of the polymer molecule to form a pendant polymer that exists in the polymer in the form of side groups or end groups. On the outside of the modified polymer film, there is a silicon dioxide film.
  2. 根据权利要求1所述POSS改性聚合物膜，其特征在于：所述POSS改性聚合物膜中POSS单体中含有两个活性官能团，通过嵌段改性形成将所述POSS单体嵌入到聚合物分子链之间的嵌段型聚合物。The POSS modified polymer film according to claim 1, wherein the POSS monomer in the POSS modified polymer film contains two active functional groups, and the POSS monomer is embedded in the POSS monomer through block modification. Block type polymer between polymer molecular chains.
  3. 根据权利要求1所述POSS改性聚合物膜，其特征在于：所述POSS改性聚合物膜中POSS单体中含有三个及以上活性官能团，在聚合物中POSS起交联剂的作用，形成POSS改性的聚合物。The POSS modified polymer film according to claim 1, wherein the POSS monomer in the POSS modified polymer film contains three or more active functional groups, and POSS functions as a crosslinking agent in the polymer. Form POSS modified polymer.
  4. 根据权利要求1所述POSS改性聚合物膜，其特征在于：所述POSS改性聚合物膜为物理改性，即以聚合物为基体，所述POSS为填料，通过机械的简单掺杂或溶液共混等方法得到宏观上均匀、连续的POSS基复合材料。The POSS modified polymer film according to claim 1, characterized in that: the POSS modified polymer film is physically modified, that is, it uses a polymer as a matrix, and the POSS as a filler, through simple mechanical doping or Solution blending and other methods to obtain macroscopically uniform and continuous POSS-based composite materials.
  5. 根据权利要求1、2、3、4所述POSS改性聚合物膜，其特征在于：所述POSS改性聚合物膜中，POSS所占的重量百分比在5％～50％之间。The POSS modified polymer film according to claims 1, 2, 3, 4, wherein the weight percentage of POSS in the POSS modified polymer film is between 5% and 50%.
  6. 根据权利要求1所述的POSS改性聚合物膜和所述二氧化硅薄膜，其特征在于：其形成过程包括：The POSS modified polymer film and the silicon dioxide film according to claim 1, wherein the forming process includes:
    步骤一：涂覆。将非交联态的POSS改性聚合物涂料，通过印刷、旋涂、喷涂、浸渍的技术方法均匀涂覆于所述HJT光伏电池的表面，形成一层涂料膜层；Step 1: Coating. Uniformly coating the non-crosslinked POSS modified polymer coating on the surface of the HJT photovoltaic cell by printing, spin coating, spraying, and dipping techniques to form a coating film layer;
    步骤二：交联。通过紫外线使所述涂料膜层交联、固化。不需要交联、固化的区域则借助于光刻掩膜、印刷掩膜加以保护；Step 2: Crosslinking. The coating film layer is crosslinked and cured by ultraviolet rays. Areas that do not require cross-linking and curing are protected by photolithography masks and printing masks;
    步骤三：制备二氧化硅膜。用原子态氧轰击处理所述涂料膜层，使之表层失去碳、氢等元素，表层裸露的Si-O-Si键与原子氧反应，转化为SiO 2薄层。 Step 3: Prepare silicon dioxide film. The coating film layer is bombarded with atomic oxygen, so that the surface layer loses elements such as carbon, hydrogen, and the exposed Si-O-Si bond on the surface layer reacts with atomic oxygen to transform into a thin SiO 2 layer.
PCT/CN2020/098731 2019-08-14 2020-06-29 High-water resistance hjt photovoltaic cell WO2021027409A1 (en)

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Publication number Priority date Publication date Assignee Title
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101142332A (en) * 2004-09-10 2008-03-12 杂混复合塑料公司 High use temperature nanocomposite resins
CN103534813A (en) * 2011-03-21 2014-01-22 阿克伦大学 Polyhedral oligomeric silsesquioxane-organic/polymeric dyads and its application for organic photovoltaic cells
US9373734B1 (en) * 2011-11-02 2016-06-21 Lockheed Martin Corporation High-efficiency solar energy device
CN108475706A (en) * 2016-03-10 2018-08-31 株式会社钟化 Solar cell module
CN109694647A (en) * 2018-12-26 2019-04-30 中国科学院兰州化学物理研究所 A kind of long-acting solid lubrication protection coating with excellent resistance to Space environmental property
CN110444613A (en) * 2019-08-14 2019-11-12 明冠新材料股份有限公司 A kind of high water resistant HJT photovoltaic cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3170208B1 (en) * 2014-07-14 2024-06-05 First Solar, Inc. Coating materials and methods for enhanced reliability

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101142332A (en) * 2004-09-10 2008-03-12 杂混复合塑料公司 High use temperature nanocomposite resins
CN103534813A (en) * 2011-03-21 2014-01-22 阿克伦大学 Polyhedral oligomeric silsesquioxane-organic/polymeric dyads and its application for organic photovoltaic cells
US9373734B1 (en) * 2011-11-02 2016-06-21 Lockheed Martin Corporation High-efficiency solar energy device
CN108475706A (en) * 2016-03-10 2018-08-31 株式会社钟化 Solar cell module
CN109694647A (en) * 2018-12-26 2019-04-30 中国科学院兰州化学物理研究所 A kind of long-acting solid lubrication protection coating with excellent resistance to Space environmental property
CN110444613A (en) * 2019-08-14 2019-11-12 明冠新材料股份有限公司 A kind of high water resistant HJT photovoltaic cell

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