CN111524988A - 一种局部阻水型太阳能电池板及其制备方法 - Google Patents
一种局部阻水型太阳能电池板及其制备方法 Download PDFInfo
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Abstract
本发明属于太阳能电池技术领域,具体说涉及一种局部阻水型太阳能电池板及其制备方法,其中太阳能电池板,电池片区域水汽透过率<0.5g/m2.d‑1,电池片间隙区域水汽透过率>5g/m2.d‑1。白天组件发电时,电池组件温度高于环境温度,水汽可从电池组件内部通过电池片间隙区域的低阻水区域往外渗出;而晚上组件不工作,可以通过电池片区域的高阻水阻止水汽从环境中渗入组件内部。对电池板进行局部阻水,既可以有效阻止环境中的水汽进入到电池组件内部,又能确保进入到电池组件内部的水汽排出。
Description
技术领域
本发明属于太阳能电池技术领域,具体说涉及一种局部阻水型太阳能电池板及其制备方法。
背景技术
太阳能电池组件的背面封装,现有技术是单玻背面使用高分子多层复合材料、双玻组件背面使用玻璃,与EVA胶膜进行层压封装成组件,组件长期在户外使用,尤其在高温高湿地域,水汽容易进入到组件内部,一方面引起胶膜的粘结脱层产生鼓包等外观问题,另一方面水汽会使得胶膜降解,产生酸性物质,这些酸性物质会腐蚀电池片上的金属导电层,引起组件的发电失效。在长期使用中,水汽渗入引起的组件的发电失效尤其值得重视。行业内为缓解电池片的失效,CN109401682A、CN105647406A、CN104449436B增强胶膜的阻水性能,降低胶膜在水汽条件下的醋酸释放量,该方法只能起到一定程度的缓解,控制水汽的进入,保护电池片不被腐蚀破坏是彻底的解决方法。
为解决水汽进入的问题,CN110757916A所述背板采用一层金属薄膜或金属镀膜将水汽透过率降低至0.01g/m2.d-1;CN107240617A采用一层添加了阻水剂的材料层作为复合材料的一层;CN104868003A采用了厚度5-100微米的金属箔类材料层;CN102496642B采用的阻隔层为铝或二氧化硅材料;CN101814542A采用的阻水层为液晶聚合物(LCP)。
上述众多发明中的复合背板现有技术只是单纯增强了高分子材料的阻水性,这样的方案与无机玻璃作为背板材料相比,背面所有区域的水汽透过率性能均无差别,虽阻止了水汽的渗入,也使得水汽无法渗出;采用上述方案或使用玻璃当背板封装,虽可解决正背面水汽的渗入,但未考虑长时间内进入到组件内部的水汽怎么渗出的问题,同样存在组件失效的问题。
发明内容
本发明的第一目的是解决组件中电池片受水汽腐蚀引起的失效问题,提供一种局部阻水型太阳能电池板,在电池板的电池片区域实现高阻水,在电池片间隙区域实现低阻水,对电池片区域进行强阻水保护,另外在间隙处则可使水汽出入,达到水汽不在组件内部累积的目的。
本发明的第一目的通过如下的技术方案实现:
一种局部阻水型太阳能电池板,电池片区域水汽透过率<0.5g/m2.d-1,电池片间隙区域水汽透过率>5g/m2.d-1。
白天组件发电时,电池组件温度高于环境温度,水汽可从电池组件内部通过电池片间隙区域的低阻水区域往外渗出;而晚上组件不工作,可以通过电池片区域的高阻水阻止水汽从环境中渗入组件内部。
具体地,一种局部阻水型太阳能电池板,在电池板的表面设置有阻水层,所述阻水层包括位于电池板的电池片区域的高阻水区和位于电池板的电池片区间隔的低阻水区,所述高阻水区的水汽透过率<0.5g/m2.d-1,所述低阻水区的水汽透过率>5g/m2.d-1。
作为优选,所述高阻水区为厚度在0.1微米-100微米之间的有机薄膜。
作为优选,所述有机薄膜的成分为主链含对二甲苯或其卤代衍生物的聚合物,或主链含1,4-亚苯基的联苯、苯甲酰氧基苯、苯甲酰胺基苯、苯甲亚氨基苯的聚合物。
作为优选,所述有机薄膜的成分为二氯对二甲苯基二聚体。
作为优选,所述有机薄膜的成分为四氯代对二甲苯环二聚体。
作为优选,所述有机薄膜的成分为对苯二甲酰对苯二胺的多聚体。
作为优选,所述有机薄膜的成分为苯基对苯二甲酸对苯二酯的多聚体。
作为优选,所述阻水层设置有两层及以上。
作为优选,所述阻水层设置在电池片层的正反两面。
本发明的第二目的是提供上述局部阻水型太阳能电池板的制备方法,在电池片的正反两面均已镀层后,在真空环境下,对阻水层的成分进行高温裂解,产生自由基,沉积在电池片的钝化膜上,形成有机薄膜,再去除电池片间隔对应的有机薄膜,在电池片层上形成阻水层。
作为优选,电池片间隔对应的有机薄膜的方法为激光烧蚀、高压等离子体局部放电、机械打孔、丝网印刷或辊转移。
通过实施上述技术方案,本发明具有如下的优点:
1.对电池板进行局部阻水,既可以有效阻止环境中的水汽进入到电池组件内部,又能确保进入到电池组件内部的水汽排出;
2.提高了电池板的具有抗PID效果;
3.在电池片表面形成的有机薄膜可以实现增韧,降低电池碎裂或隐裂的风险;
4.在电池片表面形成的致密有机薄膜,可防止封装材料或外界中的金属离子对电池片钝化层的破坏。
附图说明
图1为本发明一实施例的太阳能电池板的结构示意图;
图2为本发明一实施例的太阳能电池板的截面图;
图3为本发明一实施例中太阳能电池板的制备工艺流程图;
图4为本发明一实施例中太阳能电池组件示意图。
具体实施方式
下面结合具体实施方式对本发明的发明内容作进一步的详细描述。应理解,本发明的实施例只用于说明本发明而非限制本发明,在不脱离本发明技术思想的情况下,根据本领域普通技术知识和惯用手段,做出的各种替换和变更,均应包括在本发明的范围内。
实施例1
一种局部阻水型太阳能电池板,如图1所示,在电池板上设置有阻水层,所述阻水层包括位于电池板的电池片区域100的高阻水区100a和位于电池片层的电池片间隔200的低阻水区200a,所述高阻水区100a的水汽透过率0.1g/m2.d-1,所述低阻水区200a的水汽透过率6g/m2.d-1,阻水层的成分为二氯对二甲苯基二聚体,室温、真空环境中,沉积形成高阻水区100a,厚度为2微米,厚度均匀、致密无针孔、透明无应力。
实施例2
一种局部阻水型太阳能电池板,在电池板上设置有阻水层,所述阻水层设置两层,包括位于电池板的电池片区域100的高阻水区100a和位于电池片层的电池片间隔200的低阻水区200a,所述高阻水区100a的水汽透过率0.01g/m2.d-1,所述低阻水区200a的水汽透过率10g/m2.d-1,阻水层的成分为四氯代对二甲苯环二体,在真空环境下,固体四氯代对二甲苯环二体在150℃左右升华为气态;在650℃左右四氯代对二甲苯环二体裂解成带自由基的活性2,5-二氯对二亚甲基苯;在室温(25℃)条件下,游离态的2,5-二氯对二亚甲基苯在固态基材表面沉积聚合,形成一层无针孔的有机薄膜,厚度为20微米。
实施例3
一种局部阻水型太阳能电池板的制备方法,以p-perc双面电池为例,p-perc双面电池制作工艺流程:硅片制绒、磷扩散形成PN结、背面刻蚀、背面镀钝化层和减反射层、正面镀减反射层、正背面金属化,在正面镀减反射层之后,在背面设置阻水层,阻水层的成分为四氯代对二甲苯环二体,在真空环境下,固体四氯代对二甲苯环二体在150℃左右升华为气态;在650℃左右四氯代对二甲苯环二体裂解成带自由基的活性2,5-二氯对二亚甲基苯;在室温(25℃)条件下,游离态的2,5-二氯对二亚甲基苯在镀层后的电池板表面沉积聚合,形成一层无针孔的有机薄膜,厚度为10微米,在电池片间隔200区域通过激光烧蚀的方式去除有机薄膜,形成低阻水区200a,随后,在正反面需要形成金属电极的区域,进行激光开槽,激光可穿透开槽区域的有机薄膜,不影响浆料低温烧结与硅片基底形成正负电极。
实施例4
一种局部阻水型太阳能电池板的制备方法,以N型双面电池为例,制作工艺流程:硅片制绒、硼扩散形成PN结、背面刻蚀、背面隧穿氧化物层、离子注入/退火、正面三氧化二铝钝化层、正面镀减反射层,在正面镀减反射层之后,在电池板的两面设置阻水层,阻水层的成分为苯甲亚氨基苯的聚合物,在真空环境下,在镀层后的电池板表面沉积聚合,形成一层无针孔的有机薄膜,厚度为50微米,在电池片间隔200区域通过机械打孔的方式去除有机薄膜,形成低阻水区200a,随后,在正反面需要形成金属电极的区域,进行激光开槽,激光可穿透开槽区域的有机薄膜。
实施例5
一种局部阻水型太阳能电池板的制备方法,以异质结双面电池为例,制作工艺流程:硅片制绒、气相沉积正反面本征硅薄膜、气相沉积正反面掺杂硅薄膜、正反面TCO导电层、正反面金属化,在正反面TCO导电层之后,在电池板的两面设置阻水层,阻水层的成分为对苯二甲酰对苯二胺的多聚体,在真空环境下,在镀层后的电池板表面沉积聚合,形成一层无针孔的有机薄膜,厚度为80微米,在电池片间隔200区域通过激光烧蚀的方式去除有机薄膜,形成低阻水区200a,随后,在正反面需要形成金属电极的区域,进行激光开槽,激光可穿透开槽区域的有机薄膜。
实施例6
一种局部阻水型太阳能电池板的制备方法,以N型IBC电池为例,制作工艺流程:硅片制绒、背面硼扩散、背面掩膜、背面离子注入、掩膜清洗/退火、正背面钝化层、正面镀减反射层,在正面镀减反射层之后,在电池板的两面设置阻水层,阻水层的成分为苯基对苯二甲酸对苯二酯的多聚体,在真空环境下,在镀层后的电池板表面沉积聚合,形成一层无针孔的有机薄膜,厚度为30微米,在电池片间隔200区域通过机械打孔的方式去除有机薄膜,形成低阻水区200a,随后,在正反面需要形成金属电极的区域,进行激光开槽,激光可穿透开槽区域的有机薄膜。
实施例7
一种局部阻水型太阳能电池组件,如图3所示,包括背板10、下封装胶膜20、电池板30、EVA胶膜40和玻璃50,所述电池板上设置有阻水层,所述阻水层包括位于电池板的电池片区域100的高阻水区100a和位于电池板的电池片间隔200的低阻水区200a,所述高阻水区100a的水汽透过率0.05g/m2.d-1,所述低阻水区200a的水汽透过率10g/m2.d-1,阻水层的成分为二氯对二甲苯基二聚体,室温、真空环境中,沉积形成高阻水区100a,厚度均匀、致密无针孔、透明无应力。
Claims (10)
1.一种局部阻水型太阳能电池板,其特征在于,电池片区域水汽透过率<0.5g/m2.d-1,电池片间隙区域水汽透过率>5g/m2.d-1。
2.根据权利要求1所述的一种局部阻水型太阳能电池板,其特征在于,在电池板的表面设置有阻水层,所述阻水层包括位于电池板的电池片区域的高阻水区和位于电池板的电池片区间隔的低阻水区,所述高阻水区的水汽透过率<0.5g/m2.d-1,所述低阻水区的水汽透过率>5g/m2.d-1。
3.根据权利要求2所述的一种局部阻水型太阳能电池板,其特征在于,所述高阻水区为厚度在0.1微米-100微米之间的有机薄膜。
4.根据权利要求3所述的一种局部阻水型太阳能电池板,其特征在于,所述有机薄膜的成分为主链含对二甲苯或其卤代衍生物的聚合物,或主链含1,4-亚苯基的联苯、苯甲酰氧基苯、苯甲酰胺基苯、苯甲亚氨基苯的聚合物。
5.根据权利要求3所述的一种局部阻水型太阳能电池板,其特征在于,所述有机薄膜的成分为二氯对二甲苯基二聚体。
6.根据权利要求3所述的一种局部阻水型太阳能电池板,其特征在于,所述有机薄膜的成分为四氯代对二甲苯环二体。
7.根据权利要求2所述的一种局部阻水型太阳能电池板,其特征在于,所述阻水层设置有两层及以上。
8.如权利要求1所述的一种局部阻水型太阳能电池板的制备方法,其特征在于,在电池片的正反两面均已镀层后,在真空环境下,对阻水层的成分进行高温裂解,产生自由基,沉积在电池片的钝化膜上,形成有机薄膜,再去除电池片间隔对应的有机薄膜,在电池片层上形成阻水层。
9.根据权利要求8所述的一种局部阻水型太阳能电池板的制备方法,其特征在于,电池片间隔对应的有机薄膜的去除方法为激光烧蚀、高压等离子体局部放电、机械打孔、丝网印刷或辊转移。
10.一种局部阻水型太阳能电池组件,包含上述权利要求1-7任一所述的局部阻水型太阳能电池板。
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Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1158880A (zh) * | 1995-07-19 | 1997-09-10 | 佳能株式会社 | 用于半导体元件的保护材料、设有该保护材料的半导体元件和设有该半导体元件的半导体器件 |
TW201218395A (en) * | 2010-10-19 | 2012-05-01 | Fujifilm Corp | Solar cell module and fabricating method thereof |
CN203205441U (zh) * | 2013-03-27 | 2013-09-18 | 比亚迪股份有限公司 | 一种太阳能电池背板及一种太阳能电池组件 |
CN203225264U (zh) * | 2012-11-19 | 2013-10-02 | 深圳市创益科技发展有限公司 | 一种折叠式大幅面柔性太阳能电池组件 |
CN103681913A (zh) * | 2012-07-31 | 2014-03-26 | 三星Sdi株式会社 | 太阳能电池模块及其制造方法 |
CN103756579A (zh) * | 2014-01-09 | 2014-04-30 | 常州斯威克光伏新材料有限公司 | 一种高水汽阻隔性的eva封装胶膜及其制备方法 |
JP2016134448A (ja) * | 2015-01-16 | 2016-07-25 | 株式会社カネカ | 太陽電池モジュール |
CN106653908A (zh) * | 2017-03-03 | 2017-05-10 | 安徽鼎晖新能源科技有限公司 | 一种柔性薄膜折叠炫彩太阳能充电器及其制作工艺 |
CN207441726U (zh) * | 2017-10-27 | 2018-06-01 | 无锡英富光能有限公司 | 一种太阳能光伏组件 |
CN108173336A (zh) * | 2018-02-08 | 2018-06-15 | 耀灵科技(上海)有限公司 | 柔性太阳能充电器及制造方法 |
CN108767036A (zh) * | 2018-06-01 | 2018-11-06 | 汉能新材料科技有限公司 | 一种太阳能电池板 |
CN110444613A (zh) * | 2019-08-14 | 2019-11-12 | 明冠新材料股份有限公司 | 一种高阻水hjt光伏电池 |
CN110581184A (zh) * | 2019-09-12 | 2019-12-17 | 营口金辰机械股份有限公司 | 异质结太阳能电池及其制作工艺 |
CN110970520A (zh) * | 2018-09-29 | 2020-04-07 | 北京汉能光伏技术有限公司 | 太阳能电池封装组件及其制备方法 |
-
2020
- 2020-05-29 CN CN202010474980.4A patent/CN111524988A/zh active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1158880A (zh) * | 1995-07-19 | 1997-09-10 | 佳能株式会社 | 用于半导体元件的保护材料、设有该保护材料的半导体元件和设有该半导体元件的半导体器件 |
TW201218395A (en) * | 2010-10-19 | 2012-05-01 | Fujifilm Corp | Solar cell module and fabricating method thereof |
CN103681913A (zh) * | 2012-07-31 | 2014-03-26 | 三星Sdi株式会社 | 太阳能电池模块及其制造方法 |
CN203225264U (zh) * | 2012-11-19 | 2013-10-02 | 深圳市创益科技发展有限公司 | 一种折叠式大幅面柔性太阳能电池组件 |
CN203205441U (zh) * | 2013-03-27 | 2013-09-18 | 比亚迪股份有限公司 | 一种太阳能电池背板及一种太阳能电池组件 |
CN103756579A (zh) * | 2014-01-09 | 2014-04-30 | 常州斯威克光伏新材料有限公司 | 一种高水汽阻隔性的eva封装胶膜及其制备方法 |
JP2016134448A (ja) * | 2015-01-16 | 2016-07-25 | 株式会社カネカ | 太陽電池モジュール |
CN106653908A (zh) * | 2017-03-03 | 2017-05-10 | 安徽鼎晖新能源科技有限公司 | 一种柔性薄膜折叠炫彩太阳能充电器及其制作工艺 |
CN207441726U (zh) * | 2017-10-27 | 2018-06-01 | 无锡英富光能有限公司 | 一种太阳能光伏组件 |
CN108173336A (zh) * | 2018-02-08 | 2018-06-15 | 耀灵科技(上海)有限公司 | 柔性太阳能充电器及制造方法 |
CN108767036A (zh) * | 2018-06-01 | 2018-11-06 | 汉能新材料科技有限公司 | 一种太阳能电池板 |
CN110970520A (zh) * | 2018-09-29 | 2020-04-07 | 北京汉能光伏技术有限公司 | 太阳能电池封装组件及其制备方法 |
CN110444613A (zh) * | 2019-08-14 | 2019-11-12 | 明冠新材料股份有限公司 | 一种高阻水hjt光伏电池 |
CN110581184A (zh) * | 2019-09-12 | 2019-12-17 | 营口金辰机械股份有限公司 | 异质结太阳能电池及其制作工艺 |
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