WO2021015395A3 - 태양 전지 및 이의 제조 방법 - Google Patents

태양 전지 및 이의 제조 방법 Download PDF

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Publication number
WO2021015395A3
WO2021015395A3 PCT/KR2020/004845 KR2020004845W WO2021015395A3 WO 2021015395 A3 WO2021015395 A3 WO 2021015395A3 KR 2020004845 W KR2020004845 W KR 2020004845W WO 2021015395 A3 WO2021015395 A3 WO 2021015395A3
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Prior art keywords
solar cell
manufacturing
method therefor
aluminum oxide
oxide layer
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PCT/KR2020/004845
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English (en)
French (fr)
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WO2021015395A2 (ko
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김성진
정주화
최형욱
장원재
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엘지전자 주식회사
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Priority to CN202080052377.5A priority Critical patent/CN114127961A/zh
Priority to EP20844936.3A priority patent/EP4002495A4/en
Priority to US17/627,541 priority patent/US20220262967A1/en
Publication of WO2021015395A2 publication Critical patent/WO2021015395A2/ko
Publication of WO2021015395A3 publication Critical patent/WO2021015395A3/ko

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    • H—ELECTRICITY
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    • H01L31/02—Details
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명의 일 실시예에 따른 태양 전지는, n형 도전형을 가지는 다결정 실리콘층으로 구성되는 제1 도전형 영역 위에 위치하며 수소를 가지는 제1 알루미늄 산화물층, 그리고 상기 제1 알루미늄 산화물층 위에 위치하며 상기 제1 알루미늄 산화물층과 다른 물질을 포함하는 제1 유전층을 포함하는 제1 패시베이션층을 포함한다.
PCT/KR2020/004845 2019-07-19 2020-04-09 태양 전지 및 이의 제조 방법 WO2021015395A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202080052377.5A CN114127961A (zh) 2019-07-19 2020-04-09 太阳能电池及其制造方法
EP20844936.3A EP4002495A4 (en) 2019-07-19 2020-04-09 SOLAR CELL AND METHOD FOR MANUFACTURING IT
US17/627,541 US20220262967A1 (en) 2019-07-19 2020-04-09 Solar cell and manufacturing method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190087537A KR20210010095A (ko) 2019-07-19 2019-07-19 태양 전지 및 이의 제조 방법
KR10-2019-0087537 2019-07-19

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WO2021015395A2 WO2021015395A2 (ko) 2021-01-28
WO2021015395A3 true WO2021015395A3 (ko) 2021-04-01

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US (1) US20220262967A1 (ko)
EP (1) EP4002495A4 (ko)
KR (2) KR20210010095A (ko)
CN (1) CN114127961A (ko)
WO (1) WO2021015395A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113611774A (zh) * 2021-07-26 2021-11-05 泰州中来光电科技有限公司 一种钝化接触电池的电极金属化方法及电池、组件和系统
KR20230100022A (ko) * 2021-12-28 2023-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN114709277B (zh) * 2022-05-31 2022-09-23 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
JP2009164544A (ja) * 2007-12-28 2009-07-23 Ind Technol Res Inst 太陽電池のパッシベーション層構造およびその製造方法
KR20130038307A (ko) * 2010-06-03 2013-04-17 수니바 인코포레이티드 인 시투 표면 패시베이션을 구비한 이온 주입된 선택적 이미터 태양전지
KR20160010198A (ko) * 2014-07-18 2016-01-27 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR20180116460A (ko) * 2009-09-18 2018-10-24 신에쓰 가가꾸 고교 가부시끼가이샤 태양전지, 그 제조방법 및 태양전지 모듈

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20116217A (fi) * 2011-12-02 2013-06-03 Beneq Oy Piitä sisältävä n-tyypin aurinkokennopari
WO2013100085A1 (ja) * 2011-12-27 2013-07-04 京セラ株式会社 太陽電池素子、太陽電池素子の製造方法および太陽電池モジュール
KR101976420B1 (ko) * 2013-03-06 2019-05-09 엘지전자 주식회사 태양 전지 및 이의 제조 방법
DE102013219561A1 (de) 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer photovoltaischen Solarzelle mit zumindest einem Heteroübergang
KR102295984B1 (ko) * 2014-11-04 2021-09-01 엘지전자 주식회사 태양 전지
EP3026713B1 (en) * 2014-11-28 2019-03-27 LG Electronics Inc. Solar cell and method for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
JP2009164544A (ja) * 2007-12-28 2009-07-23 Ind Technol Res Inst 太陽電池のパッシベーション層構造およびその製造方法
KR20180116460A (ko) * 2009-09-18 2018-10-24 신에쓰 가가꾸 고교 가부시끼가이샤 태양전지, 그 제조방법 및 태양전지 모듈
KR20130038307A (ko) * 2010-06-03 2013-04-17 수니바 인코포레이티드 인 시투 표면 패시베이션을 구비한 이온 주입된 선택적 이미터 태양전지
KR20160010198A (ko) * 2014-07-18 2016-01-27 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Also Published As

Publication number Publication date
CN114127961A (zh) 2022-03-01
EP4002495A4 (en) 2023-07-19
KR20210131276A (ko) 2021-11-02
US20220262967A1 (en) 2022-08-18
KR20210010095A (ko) 2021-01-27
EP4002495A2 (en) 2022-05-25
WO2021015395A2 (ko) 2021-01-28
KR102549298B1 (ko) 2023-06-30

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