WO2021010379A1 - 弾性波フィルタおよびマルチプレクサ - Google Patents
弾性波フィルタおよびマルチプレクサ Download PDFInfo
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- WO2021010379A1 WO2021010379A1 PCT/JP2020/027273 JP2020027273W WO2021010379A1 WO 2021010379 A1 WO2021010379 A1 WO 2021010379A1 JP 2020027273 W JP2020027273 W JP 2020027273W WO 2021010379 A1 WO2021010379 A1 WO 2021010379A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/14576—Transducers whereby only the last fingers have different characteristics with respect to the other fingers, e.g. different shape, thickness or material, split finger
- H03H9/14582—Transducers whereby only the last fingers have different characteristics with respect to the other fingers, e.g. different shape, thickness or material, split finger the last fingers having a different pitch
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
- H03H9/6469—Coupled resonator filters having two acoustic tracks being electrically coupled via two connecting electrodes
- H03H9/6476—Coupled resonator filters having two acoustic tracks being electrically coupled via two connecting electrodes the tracks being electrically parallel
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
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- H—ELECTRICITY
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- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
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- H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
Definitions
- the present invention relates to an elastic wave filter and a multiplexer provided with the elastic wave filter.
- Patent Document 1 describes in a longitudinally coupled resonator in which a plurality of IDT (InterDigital Transducer) electrodes and reflectors are arranged in the direction of elastic wave propagation, between the main excitation regions of the IDT electrodes or between the main excitation region and the reflector.
- IDT InterDigital Transducer
- An elastic wave filter in which a sub-excitation region in which the electrode finger pitch changes stepwise is arranged is disclosed. According to this, it is said that the low loss property of the elastic wave filter is improved.
- Patent Document 1 in an elastic wave filter including a vertically coupled resonator in which a sub-excitation region in which the distribution of the electrode finger pitch changes regularly is arranged, unnecessary acoustic waves are excited and sufficiently attenuated. There is a problem that the characteristics cannot be obtained. Further, there is a problem that the isolation characteristic of the multiplexer including the elastic wave filter is deteriorated.
- an object of the present invention is to provide an elastic wave filter having improved damping characteristics and a multiplexer having improved isolation characteristics.
- the elastic wave filter includes a substrate having piezoelectricity, a plurality of IDT electrodes provided on the substrate and juxtaposed in the elastic wave propagation direction, and the plurality of IDT electrodes.
- An elastic wave filter including a vertically coupled resonator having a reflector arranged so as to be adjacent to the IDT electrode in the elastic wave propagation direction, and each of the plurality of IDT electrodes and the reflector is , It is composed of a plurality of electrode fingers extending in a direction intersecting the elastic wave propagation direction and arranged in parallel with each other, and (1) the kth (k is an integer of 2 or more) th in the elastic wave propagation direction.
- the distance between the electrode finger and the (k + 1) th electrode finger is defined as the kth electrode finger pitch, and the (2) (k-1) th electrode finger, the kth electrode finger, and the (k + 1) th electrode.
- Difference between the k-th electrode finger pitch and the section average electrode finger pitch which is the average of the (k-1) -th electrode finger pitch and the (k + 1) -th electrode finger pitch, in three adjacent electrode fingers called fingers.
- Is divided by the total electrode finger pitch which is the average pitch of the entire electrode fingers of the IDT electrode or the reflector including the three adjacent electrode fingers, and defined as the pitch deviation rate of the kth electrode finger.
- the pitch deviation rate of the k-th electrode finger is the pitch deviation rate obtained by calculating the pitch deviation rate of all the electrode fingers of the IDT electrode or the reflector including the three adjacent electrode fingers.
- the distribution is defined as the pitch deviation rate histogram, at least one of the plurality of IDT electrodes and the reflector has a standard deviation of the pitch deviation rate of 1.4% or more in the histogram.
- an elastic wave filter having improved damping characteristics and a multiplexer with improved isolation characteristics.
- FIG. 1 is a circuit configuration diagram of an elastic wave filter according to an embodiment.
- FIG. 2 is a schematic plan view showing an electrode configuration of the vertically coupled resonator according to the embodiment.
- FIG. 3 is a graph showing the distribution of the electrode finger pitch of the vertically coupled resonator according to the embodiment.
- FIG. 4 is a graph showing the distribution of the electrode finger pitch of the vertically coupled resonator according to the comparative example.
- FIG. 5 is a diagram illustrating the action of the irregular electrode finger pitch distribution of the vertically coupled resonator according to the embodiment.
- FIG. 6 is a diagram for explaining the pitch deviation rate and its standard deviation in the irregular electrode finger pitch distribution of the vertically coupled resonator according to the embodiment.
- FIG. 7 is a block diagram of the multiplexer and its peripheral circuit according to the first embodiment.
- FIG. 8 is a graph comparing the passage characteristics and isolation characteristics of the multiplexers according to Example 1 and Comparative Example 1.
- FIG. 9 is a graph comparing the voltage standing wave ratios of the multiplexers according to Example 1 and Comparative Example 1.
- FIG. 10 is a graph showing the relationship between the standard deviation of the pitch deviation rate of the longitudinally coupled resonator and the isolation of the multiplexer.
- FIG. 11A is a circuit configuration diagram of the elastic wave filter according to the second embodiment.
- FIG. 11B is a graph comparing the passing characteristics of the elastic wave filters according to Example 2 and Comparative Example 2.
- FIG. 12A is a graph showing the electrode finger arrangement configuration and the electrode finger pitch distribution of the electrode finger pitch of the vertically coupled resonator included in the elastic wave filter according to the third embodiment.
- FIG. 12B is a graph comparing the passage characteristics and isolation characteristics of the multiplexers according to Example 3 and Comparative Example 3.
- FIG. 13 is a block diagram of the multiplexer and its peripheral circuit according to the fourth embodiment.
- FIG. 14 is a graph comparing the passing characteristics of the elastic wave filters according to Example 4, Comparative Example 4, and Comparative Example 5.
- FIG. 1 is a circuit configuration diagram of the elastic wave filter 40 according to the embodiment.
- FIG. 2 is a schematic plan view showing an electrode configuration of the vertically coupled resonator 1 according to the embodiment.
- FIG. 2 shows the planar layout configuration of the IDT electrodes and reflectors constituting the vertically coupled resonator 1 and the electrical connection state between the IDT electrodes.
- the longitudinally coupled resonator 1 shown in FIG. 2 is for explaining a typical planar layout configuration of an IDT electrode, and the number, length, and electrode finger pitch of the electrode fingers constituting the IDT electrode. Etc. are not limited to this.
- the elastic wave filter 40 includes a longitudinal coupling resonator 1, series arm resonators 31s and 32s, parallel arm resonators 31p and 32p, and input / output terminals 110 and 120.
- the series arm resonators 31s and 32s are elastic wave resonators arranged in series on the path connecting the input / output terminal 110 and the input / output terminal 120.
- the parallel arm resonators 31p and 32p are elastic wave resonators connected between the node and the ground on the path, respectively.
- the vertically coupled resonator 1 is composed of vertically coupled resonator portions 10 and 20 connected in parallel, and is arranged between the terminal 130 and the input / output terminal 120.
- the longitudinally coupled resonance unit 10 is provided with respect to five IDT (InterDigital Transducer) electrodes 11, 12, 13, 14 and 15 arranged side by side in the elastic wave propagation direction on a piezoelectric substrate, and the five IDT electrodes. It has reflectors 19A and 19B arranged adjacent to each other in the direction of elastic wave propagation.
- the vertically coupled resonance portion 20 propagates elastic waves to five IDT electrodes 21, 22, 23, 24 and 25 arranged side by side in the elastic wave propagation direction on a piezoelectric substrate and the five IDT electrodes. It has reflectors 29A and 29B arranged so as to be adjacent to each other in the direction.
- the IDT electrodes 11 to 15, 21 to 25 and the reflectors 19A, 19B, 29A and 29B are formed on a piezoelectric substrate, and the IDT electrodes 11 to 15 and 21 to 25 and the piezoelectric substrate are different from each other. , Consists of surface acoustic wave resonators.
- the IDT electrodes 11 to 15, 21 to 25, and the reflectors 19A, 19B, 29A, and 29B each extend in a direction intersecting the elastic wave propagation direction and are composed of a plurality of electrode fingers arranged parallel to each other. There is.
- the IDT electrode 11 is composed of comb-shaped electrodes 11a and 11b.
- the comb-shaped electrode 11a is an example of the first comb-shaped electrode, and includes a part of the electrode fingers of the plurality of electrode fingers constituting the IDT electrode 11 and a bus bar electrode connecting one end of the part of the electrode fingers. It is configured by and is connected to the input / output terminal 120.
- the comb-shaped electrode 11b is an example of a second comb-shaped electrode, and includes an electrode finger of another part of a plurality of electrode fingers constituting the IDT electrode 11 and a bus bar electrode connecting the other ends of the electrode fingers of the other part. It consists of and is connected to the ground.
- the electrode fingers that make up the comb-shaped electrode 11a and the electrode fingers that make up the comb-shaped electrode 11b are interleaved with each other.
- the IDT electrode 13 is composed of a comb-shaped electrode 13a (first comb-shaped electrode) and 13b (second comb-shaped electrode).
- the comb-shaped electrode 13a is connected to the input / output terminal 120, and the comb-shaped electrode 13b is connected to the ground.
- the IDT electrode 15 is composed of a comb-shaped electrode 15a (first comb-shaped electrode) and 15b (second comb-shaped electrode).
- the comb-shaped electrode 15a is connected to the input / output terminal 120, and the comb-shaped electrode 15b is connected to the ground.
- the IDT electrode 21 is composed of a comb-shaped electrode 21a (first comb-shaped electrode) and 21b (second comb-shaped electrode).
- the comb-shaped electrode 21a is connected to the input / output terminal 120, and the comb-shaped electrode 21b is connected to the ground.
- the IDT electrode 23 is composed of a comb-shaped electrode 23a (first comb-shaped electrode) and 23b (second comb-shaped electrode).
- the comb-shaped electrode 23a is connected to the input / output terminal 120, and the comb-shaped electrode 23b is connected to the ground.
- the IDT electrode 25 is composed of a comb-shaped electrode 25a (first comb-shaped electrode) and 25b (second comb-shaped electrode).
- the comb-shaped electrode 25a is connected to the input / output terminal 120, and the comb-shaped electrode 25b is connected to the ground.
- the IDT electrode 12 is composed of comb-shaped electrodes 12a and 12b.
- the comb-shaped electrode 12b is an example of the first comb-shaped electrode, and includes a part of the electrode fingers of the plurality of electrode fingers constituting the IDT electrode 12 and a bus bar electrode connecting one end of the part of the electrode fingers. It is composed of and is connected to the terminal 130.
- the comb-shaped electrode 12a is an example of a second comb-shaped electrode, and includes an electrode finger of another portion of a plurality of electrode fingers constituting the IDT electrode 12 and a bus bar electrode connecting the other ends of the electrode fingers of the other portion. It consists of and is connected to the ground.
- the electrode fingers forming the comb-shaped electrode 12a and the electrode fingers forming the comb-shaped electrode 12b are interleaved with each other.
- the IDT electrode 14 is composed of a comb-shaped electrode 14b (first comb-shaped electrode) and 14a (second comb-shaped electrode).
- the comb-shaped electrode 14b is connected to the terminal 130, and the comb-shaped electrode 14a is connected to the ground.
- the IDT electrode 22 is composed of a comb-shaped electrode 22b (first comb-shaped electrode) and 22a (second comb-shaped electrode).
- the comb-shaped electrode 22b is connected to the terminal 130, and the comb-shaped electrode 22a is connected to the ground.
- the IDT electrode 24 is composed of a comb-shaped electrode 24b (first comb-shaped electrode) and 24a (second comb-shaped electrode).
- the comb-shaped electrode 24b is connected to the terminal 130, and the comb-shaped electrode 24a is connected to the ground.
- the number of IDT electrodes constituting the vertically coupled resonance portion 10 may be 2 or more, and the number of IDT electrodes constituting the vertically coupled resonance portion 20 may be 2 or more. Further, the number of reflectors constituting the vertically coupled resonance portion 10 may be 1 or more, and the number of reflectors constituting the vertically coupled resonance portion 20 may be 1 or more.
- the number of vertically coupled resonators 1 constituting the vertically coupled resonator 1 is arbitrary, and the vertically coupled resonator 1 is any one of the vertically coupled resonators 10 and 20. It may be composed of only.
- the number of series arm resonators and the number of parallel arm resonators are arbitrary, and the series arm resonators 31s and 32s and the parallel arm resonators 31p and 32p are eliminated. You may.
- the elastic wave filter 40 according to the present embodiment, another circuit element, wiring, or the like is inserted between the paths connecting the elastic wave resonator, the input / output terminal, and the ground disclosed in FIG. May be good.
- each of the IDT electrodes 11 to 15, 21 to 25, and the reflectors 19A, 19B, 29A, and 29B is extended in a direction intersecting the elastic wave propagation direction, and a plurality of IDT electrodes are arranged in parallel with each other. It is composed of an electrode finger Fe.
- the elastic wave filter 40 according to the present embodiment is characterized by the distribution of the electrode finger pitch P, which is the distance between the adjacent electrode fingers Fe (the distance between the center lines in the elastic wave propagation direction of the electrode fingers Fe).
- the electrode finger pitch P is the distance between the adjacent electrode fingers Fe (the distance between the center lines in the elastic wave propagation direction of the electrode fingers Fe).
- the electrode finger pitch P (2) of the electrode finger Fe (2), the electrode finger pitch P (3) of the electrode finger Fe (3), and the electrode finger pitch P (4) of the electrode finger Fe (4) is defined. That is, the distance between the electrode finger Fe (k) and the electrode finger Fe (k + 1) (the center line of the electrode finger Fe (k) in the elastic wave propagation direction and the center line of the electrode finger Fe (k + 1) in the elastic wave propagation direction. Distance) is defined as the electrode finger pitch P (k) (k is a natural number) of the kth electrode finger Fe (k) in the elastic wave propagation direction.
- FIG. 3 is a graph showing the distribution of the electrode finger pitch P (k) of the vertically coupled resonator 1 according to the embodiment.
- the electrode finger pitch P (k) of the vertically coupled resonance portion 10 constituting the vertically coupled resonator 1 is shown.
- the horizontal axis shows the positions of the electrode finger Fe (1) to the electrode finger Fe (200) constituting the vertically coupled resonance portion 10, and the vertical axis shows the electrode finger pitch P of the electrode finger Fe (k). (K) is shown.
- the electrode finger pitch P (k) has an irregularly arranged electrode finger sections.
- FIG. 4 is a graph showing the distribution of the electrode finger pitch P (k) of the vertically coupled resonance portion of the elastic wave filter according to the comparative example.
- the elastic wave filter according to the comparative example is the same as the elastic wave filter 40 according to the embodiment in that it has an elastic wave resonator in which two elastic wave resonance portions are connected in parallel, but the two.
- the distribution of the electrode finger pitch P (k) of the elastic wave resonance portion is different.
- FIG. 4 shows the electrode finger pitch P (k) of the vertically coupled resonance portion according to the comparative example.
- the electrode finger pitches P (k) are regularly arranged in the vertically coupled resonance portion according to the comparative example.
- the vertically coupled resonance portion according to the comparative example has a section having a constant electrode finger pitch P between three or more adjacent electrode finger Fes in the same IDT electrode or reflector.
- the electrode finger pitch P (k) is a constant ratio with respect to the transition of the electrode finger Fe.
- the electrode finger pitch P (k) has a constant slope: a so-called gradation pitch).
- the electrode finger pitch P (k) has an IDT electrode or a reflector that does not have a constant inclination.
- the electrode finger pitches P (k) are irregularly arranged in all of the IDT electrodes 11 to 15 and the reflectors 19A and 19B.
- the longitudinally coupled resonator of the elastic wave filter according to the present invention is not limited to this. That is, in the elastic wave filter according to the present invention, in at least one of the IDT electrodes 11 to 15 and the reflectors 19A and 19B, the electrode finger pitch P (k) is irregular between three or more adjacent electrode finger Fes. It suffices to have electrode finger sections arranged in.
- the electrode finger pitch P (k) of the vertically coupled resonance portion 20 constituting the vertically coupled resonator 1 also has an irregular distribution, similarly to the electrode finger pitch P (k) of the vertically coupled resonance portion 10. You may be. Further, the distribution of the electrode finger pitch P (k) of the vertically coupled resonance portion 10 and the vertically coupled resonance portion 20 may be the same or may be different.
- FIG. 5 is a diagram illustrating the effect of the irregular distribution of the electrode finger pitch P (k) of the longitudinally coupled resonator 1 according to the embodiment.
- a schematic cross-sectional view of the piezoelectric substrate 60 and the electrode fingers Fe (k) to Fe (k + 4) formed on the substrate 60 is shown.
- the electrode fingers Fe (k) to Fe (k + 4) shown in FIG. 5 have irregular electrode finger pitches P (k) to P (k + 4).
- the electrode fingers Fe (k) to Fe (k + 4) shown in FIG. 5 are electrode fingers arranged in the same IDT electrode (action 1).
- the electrode finger Fe (k), the electrode finger Fe (k + 2), and the electrode finger Fe (k + 4) form a first comb-shaped electrode to which a signal potential (HOT) is applied.
- the electrode finger Fe (k + 1) and the electrode finger Fe (k + 3) form a second comb-shaped electrode connected to the ground (GND).
- the electrode finger pitches P (k), P (k + 1), P (k + 2), and P (k + 3) have an irregular electrode finger pitch distribution.
- the phase of the wavelength (wavelength of the acoustic wave of HOT2) of the acoustic wave (solid line in FIG. 5) excited by the electrode finger Fe (k + 2) which is the HOT electrode and the electrode finger Fe (k) which is the HOT electrode are used.
- a deviation occurs in the phase of the excited acoustic wave (single-point chain line in FIG. 5).
- the acoustic impedance is likely to be inconsistent between the electrode finger Fe (k), the electrode finger Fe (k + 2), and the electrode finger Fe (k + 4), which are HOT electrodes.
- the electrode fingers Fe (k) to Fe (k + 3) shown in FIG. 5 belong to the IDT electrode on the input side in the longitudinal coupling resonator 1, and the electrode fingers Fe (k + 4) belong to the longitudinal coupling resonator 1. It is assumed that it belongs to the IDT electrode on the output side (action 2).
- the electrode finger Fe (k), the electrode finger Fe (k + 2), and the electrode finger Fe (k + 4) form a first comb-shaped electrode to which a signal potential (HOT) is applied.
- the electrode finger Fe (k + 1) and the electrode finger Fe (k + 3) form a second comb-shaped electrode connected to the ground (GND).
- the electrode finger pitches P (k), P (k + 1), P (k + 2), and P (k + 3) have an irregular electrode finger pitch distribution.
- the acoustic wave excited by the electrode finger Fe (k) on the input side IDT electrode and the acoustic wave excited by the electrode finger Fe (k + 2) are transferred by the electrode finger Fe (k + 4) on the output side IDT electrode.
- the phase of the acoustic wave of the electrode finger Fe (k) and the phase of the acoustic wave of the electrode finger Fe (k + 2) are out of phase, so that the electrode finger Fe (k + 4) cannot efficiently pick up.
- the excitation of the signal of the frequency of the attenuation band is suppressed in the electrode finger which is the HOT electrode, and the signal of the frequency of the attenuation band is transmitted from the input side IDT electrode to the output side IDT. It is possible to prevent the propagation to reach the electrodes.
- the irregular electrode finger pitch as shown in FIG. 5 is obtained with respect to the IDT electrode or the reflector having the electrode finger pitch P corresponding to the frequency of the attenuation band.
- FIG. 6 is a diagram illustrating a pitch deviation rate D and a standard deviation SD thereof in an irregular electrode finger pitch distribution of the longitudinally coupled resonator 1 according to the embodiment.
- FIG. 6A shows an example of the distribution of the electrode finger pitch P (k) of the IDT electrode or the reflector that constitutes the vertically coupled resonator.
- the horizontal axis shows the position of the electrode finger Fe (k) constituting the IDT electrode or the reflector, and the vertical axis shows the electrode finger pitch P (k) of the electrode finger Fe (k). ..
- the distance between the k (k is an integer of 2 or more) th electrode finger Fe (k) and the (k + 1) th electrode finger Fe (k + 1) in the elastic wave propagation direction (electrode finger Fe).
- the distance between the center line in the elastic wave propagation direction of (k) and the center line in the elastic wave propagation direction of the electrode finger Fe (k + 1)) is defined as the k-th electrode finger pitch P (k).
- the pitch deviation rate D (k) of the electrode finger Fe (k) is set by an IDT electrode or reflector containing the electrode fingers Fe (k-1), Fe (k), and Fe (k + 1). It is calculated for all the electrode finger Fes having, and a histogram of the pitch deviation rate D (k) in the IDT electrode or the reflector is calculated.
- FIG. 6B shows an example of the distribution of the pitch deviation rate D (k) of the IDT electrode or the reflector constituting the vertically coupled resonator.
- the horizontal axis shows the position of the electrode finger Fe (k) constituting the IDT electrode or the reflector, and the vertical axis shows the pitch deviation rate D (k).
- FIG. 6 (c) shows an example of a histogram of the pitch deviation rate D (k) of the IDT electrode or the reflector constituting the vertically coupled resonator.
- the standard deviation SD of D (k) increases.
- the IDT electrodes 11 to 15 and the reflectors 19A and 19B constituting the longitudinally coupled resonator portion 10 each have a pitch deviation rate D (k).
- the standard deviation is 1.4% or more.
- the standard deviation of the pitch deviation rate D (k) in the histogram is 1.4% or more in each of the IDT electrodes 21 to 25 and the reflectors 29A and 29B constituting the vertically coupled resonance portion 20.
- the acoustic wave corresponding to the frequency of the attenuation band of the elastic wave filter propagates on the substrate, it is excited by, for example, the phase of the acoustic wave excited by the electrode finger Fe (k) and the electrode finger Fe (k + 2).
- the phase of the acoustic wave is likely to be out of phase, and the acoustic impedance is likely to be inconsistent. Therefore, it is possible to suppress the excitation of the acoustic wave corresponding to the frequency of the attenuation band of the elastic wave filter.
- the standard deviation SD in the above histogram is 1. It will be less than 4%. Further, the electrode finger pitch P (k) increases or decreases at a constant rate with respect to the transition of the electrode finger Fe (k) (the electrode finger pitch P (k) has a constant inclination: so-called gradation pitch). Since the regularity of the electrode finger pitch P (k) is strong also in each of the IDT electrode and the reflector having the electrode finger configuration, the standard deviation SD in the above histogram is less than 1.4%.
- the IDT electrodes 11 to 15 constituting the longitudinally coupled resonator portion 10, the reflectors 19A and 19B, and the IDT electrodes 21 to 25 constituting the longitudinally coupled resonator portion 20 are formed.
- At least one of the reflectors 29A and 29B may have a standard deviation SD of 1.4% or more in the histogram.
- the attenuation characteristics of the elastic wave filter 40 can be effectively improved by setting the standard deviation SD in the histogram to 1.4% or more for the IDT electrode or the reflector which has a large influence on the attenuation characteristics. It will be possible.
- the histogram 1 at least one of the IDT electrodes 11 to 15 constituting the histogram resonance portion 10 and the IDT electrodes 21 to 25 constituting the histogram 20 is
- the standard deviation SD in the histogram may be 1.4% or more, and each of the reflectors 19A, 19B, 29A and 29B may have a standard deviation SD of less than 1.4% in the histogram.
- the attenuation characteristics of the elastic wave filter 40 can be improved by applying the irregular electrode finger pitch P (k) to the IDT electrode having a large influence on the attenuation characteristics, and the electrode finger pitch P in the reflector can be improved. Since the manufacturing variation of (k) can be suppressed, it is possible to stabilize the attenuation electrode outside the pass band defined by the resonance operation of the reflector.
- the IDT electrodes 11 to 15 and one of the IDT electrodes 21 to 25 have a standard deviation SD of 1.4% or more in the above histogram. Further, the IDT electrodes 11 to 15 and the other IDT electrodes 21 to 25 may have a standard deviation SD of less than 1.4% in the above histogram.
- the damping characteristics of the elastic wave filter 40 can be improved with respect to one IDT electrode having a large influence on the damping characteristics, and the manufacturing variation in the other IDT electrodes can be suppressed, so that the deterioration of the characteristics can be suppressed.
- At least one of the reflectors 19A, 19B, 29A and 29B constituting the longitudinally coupled resonator portion 10 has a standard deviation SD of 1.4% or more in the above histogram.
- each of the IDT electrodes 11 to 15 and 21 to 25 may have a standard deviation SD of less than 1.4% in the above histogram.
- the irregular electrode finger pitch P (k) to the reflector having a large influence on the attenuation characteristics, the attenuation characteristics of the elastic wave filter 40 can be improved, and the electrode finger pitch P at the IDT electrode can be improved. Since the manufacturing variation of (k) can be suppressed, the insertion loss in the pass band can be stabilized.
- FIG. 7 is a configuration diagram of the multiplexer 100 and its peripheral circuit according to the first embodiment.
- the multiplexer 100 includes an elastic wave filter 40, a filter 50, and a common terminal 160.
- the multiplexer 100 is connected to the antenna 2 at the common terminal 160.
- An inductor 3 for impedance matching is connected between the connection path between the common terminal 160 and the antenna 2 and the ground.
- the inductor 3 may be connected in series between the common terminal 160 and the antenna 2.
- the inductor 3 may be included in the multiplexer 100 or may be externally attached to the multiplexer 100. Further, the inductor 3 may be a capacitor, or may be a composite circuit including an inductor and a capacitor.
- the filter 50 is an example of the first filter, and is applied to a transmission filter (transmission band: 824-849 MHz) of Band 26 of LTE (Long Term Evolution).
- the elastic wave filter 40 is applied to the LTE Band 26 reception filter (reception band: 859-894 MHz).
- the input / output terminal 140 of the filter 50 and the input / output terminal 110 of the elastic wave filter 40 are connected to the common terminal 160, and the multiplexer 100 according to this embodiment is applied to the duplexer of Band 26 of LTE.
- the filter 50 is a ladder type elastic wave filter having an input / output terminal 140 (third input / output terminal) and an input / output terminal 150 (fourth input / output terminal) and composed of a plurality of elastic wave resonators.
- the filter 50 includes series arm resonators 51s, 52s, 53s and 54s, and parallel arm resonators 51p, 52p and 53p.
- the series arm resonators 51s, 52s, 53s and 54s are arranged in series on the path connecting the input / output terminal 140 and the input / output terminal 150.
- the parallel arm resonators 51p, 52p, and 53p are connected between the node on the path and the ground, respectively. With this configuration, the filter 50 constitutes a bandpass filter having the transmission band of the LTE Band 26 as a pass band.
- the elastic wave filter 40 has the same circuit configuration as the elastic wave filter 40 according to the embodiment, and uses a love wave as the elastic wave.
- the five IDT electrodes 11 to 15, the reflectors 19A and 19B of the vertically coupled resonance portion 10, and the five IDT electrodes 21 to 25, the reflectors 29A and 29B of the vertically coupled resonance portion 20, are shown in FIG. It has a distribution of electrode finger pitch P (k), and the standard deviation SD of the pitch deviation rate D (k) of the vertically coupled resonance portions 10 and 20 is 2.92%, respectively.
- FIG. 8 is a graph comparing the passage characteristics and isolation characteristics of the multiplexers according to Example 1 and Comparative Example 1. Further, FIG. 9 is a graph comparing the voltage standing wave ratios of the multiplexers according to Example 1 and Comparative Example 1.
- the circuit configuration of the multiplexer according to Comparative Example 1 is the same as the circuit configuration of the multiplexer 100 according to the first embodiment shown in FIG. 7, but the reception filter is compared with the multiplexer 100 according to the first embodiment.
- the difference is that the electrode finger pitch P (k) of the vertically coupled resonance portion constituting the (elastic wave filter 40) is regularly distributed. That is, the standard deviation SD of the pitch deviation rate D (k) of the vertically coupled resonance portion constituting the receiving filter according to Comparative Example 1 is less than 1.4%.
- Example 1 is a comparative example due to the improvement of the attenuation characteristic of the reception filter.
- the isolation characteristic in the transmission band (inside the broken line circle in the figure) is improved as compared with 1.
- the passing characteristics of the reception filter and the transmission filter in the attenuation band on the low frequency side of the Band 26 transmission band and the attenuation band on the high frequency side of the Band 26 reception band are no difference between the first embodiment and the first comparative example in terms of the passing characteristics and the isolation characteristics between the transmitting filter and the receiving filter (elastic wave filter 40).
- the voltage standing wave ratios on the input side and the output side in the reception band of the reception filter according to the first embodiment are smaller than those in the comparative example 1. Therefore, the impedance characteristics of the receiving filter are also improved.
- the improvement of the attenuation characteristic of the receiving filter, the improvement of the impedance characteristic, and the improvement of the isolation characteristic between the receiving filter and the transmitting filter according to the first embodiment are described in the electrode finger pitch P of the longitudinally coupled resonance portion in the first embodiment.
- the solution is that by setting k) to an irregular distribution and increasing the standard deviation SD of the pitch deviation rate D (k), it was possible to inhibit the excitation of unnecessary acoustic waves and suppress the propagation of unnecessary signals. Will be done.
- FIG. 10 is a graph showing the relationship between the standard deviation SD of the pitch deviation rate D (k) of the longitudinally coupled resonator 1 and the isolation of the multiplexer 100.
- FIG. 6 shows the correlation between the standard deviation SD of the pitch deviation rate D (k) of the longitudinally coupled resonator 1 included in the elastic wave filter 40 and the isolation of the transmission band in the multiplexer 100 according to the first embodiment. ing.
- the standard deviation SD of the pitch deviation rate D (k) by setting the standard deviation SD of the pitch deviation rate D (k) to 1.4% or more, the effect of improving the isolation of the transmission band (1 dB or more) is obtained. Further, in the range of the standard deviation SD of 1.4% to 3.0%, the isolation of the transmission band improves as the standard deviation SD increases.
- FIG. 11A is a circuit configuration diagram of the elastic wave filter 40A according to the second embodiment.
- the elastic wave filter 40A includes a longitudinal coupling resonator 10A, series arm resonators 33s and 34s, parallel arm resonators 33p and 34p, and input / output terminals 110 and 120.
- the structure of the vertically coupled resonance portion 10A of the elastic wave filter 40A according to the second embodiment is mainly different from that of the elastic wave filter 40 according to the embodiment.
- the same configuration as the elastic wave filter 40 according to the embodiment will be omitted, and different configurations will be mainly described.
- the series arm resonators 33s and 34s are elastic wave resonators arranged in series on the path connecting the input / output terminal 110 and the input / output terminal 120.
- the parallel arm resonators 33p and 34p are elastic wave resonators connected between the node and the ground on the path, respectively.
- the vertically coupled resonance portion 10A is arranged so as to be adjacent to the seven IDT electrodes arranged side by side in the elastic wave propagation direction on the piezoelectric substrate and the seven IDT electrodes in the elastic wave propagation direction. It has two reflectors. Each of the seven IDT electrodes and the two reflectors constitutes an surface acoustic wave resonator together with a piezoelectric substrate. Each of the seven IDT electrodes and the two reflectors is composed of a plurality of electrode fingers Fe extending in a direction intersecting the elastic wave propagation direction and arranged in parallel with each other.
- the elastic wave filter 40A uses a low-pitched Rayleigh wave as an elastic wave, and constitutes a bandpass filter having the LTE Band 8 reception band (925-960 MHz) as a pass band.
- the seven IDT electrodes and the two reflectors of the vertically coupled resonance portion 10A have an irregular distribution of electrode finger pitches P (k), and have a pitch deviation rate D (k) of the vertically coupled resonance portion 10A.
- the standard deviation SD is 1.5%.
- FIG. 11B is a graph comparing the passing characteristics of the elastic wave filters according to Example 2 and Comparative Example 2.
- the circuit configuration of the elastic wave filter according to Comparative Example 2 is the same as the circuit configuration of the elastic wave filter 40A according to the second embodiment shown in FIG. 11A, but is compared with the elastic wave filter 40A according to the second embodiment.
- the difference is that the electrode finger pitch P (k) of the vertically coupled resonance portion 10A is regularly distributed. That is, the standard deviation SD of the pitch deviation rate D (k) of the vertically coupled resonance portion 10A constituting the elastic wave filter according to Comparative Example 2 is less than 1.4%.
- the elastic wave filter 40A according to Example 2 has improved attenuation characteristics in the transmission band (880-915 MHz) as compared with the elastic wave filter according to Comparative Example 2, and is within the pass band. Ripple is reduced.
- the electrode finger pitch P (k) of the vertically coupled resonance portion 10A is irregularly distributed, and the standard deviation SD of the pitch deviation rate D (k) is increased, so that not only the attenuation band but also the attenuation band is increased. It is understood that the ripple in the pass band is reduced by inhibiting the excitation of unnecessary acoustic waves generated in the pass band.
- the multiplexer according to the third embodiment has the same circuit configuration as the multiplexer 100 according to the first embodiment shown in FIG. 7, but is vertically coupled to form a receiving filter as compared with the multiplexer 100 according to the first embodiment.
- the distribution mode of the electrode finger pitch P (k) of the resonance portion is different.
- FIG. 12A is a graph showing the electrode finger arrangement configuration and the electrode finger pitch distribution of the vertically coupled resonance portion 10 included in the receiving filter (elastic wave filter 40) according to the third embodiment.
- the lower part of FIG. 12A shows an electrode layout in which a part of the IDT electrode 11 constituting the vertically coupled resonance portion 10 is enlarged.
- the IDT electrode 11 is composed of comb-shaped electrodes 11a and 11b.
- the comb-shaped electrode 11a is an example of a first comb-shaped electrode to which a signal potential (HOT) is applied
- the comb-shaped electrode 11b is an example of a second comb-shaped electrode connected to the ground.
- the electrode fingers Fe (1), Fe (3), Fe (5) and Fe (7) constituting the comb-shaped electrode 11a and the electrode fingers Fe (2G), Fe (4G) and Fe (6G) constituting the comb-shaped electrode 11b. ) Are interspersed with each other.
- the electrode finger pitches of the adjacent electrode fingers in the electrode fingers Fe (1), Fe (3), Fe (5), Fe (7) ... Constituting the comb-shaped electrode 11a are irregularly distributed.
- the electrode finger pitches of the adjacent electrode fingers in the electrode fingers Fe (2G), Fe (4G), Fe (6G) ... Constituting the comb-shaped electrode 11b are equal over the comb-shaped electrode 11b.
- the IDT electrode 11 is used as a standard deviation SD of the pitch deviation rate D (k) in the entire IDT electrode 11 due to the irregularity of the electrode finger pitch in the comb-shaped electrode 11a and the regularity of the electrode finger pitch in the comb-shaped electrode 11b. , 1.4% or more.
- the IDT electrodes 12 to 15 and the reflectors 19A and 19B of the vertically coupled resonance portion 10 constituting the receiving filter (elastic wave filter 40) are used.
- the distribution mode of the electrode finger pitch P (k) is the same as that of the IDT electrode 11 described above.
- FIG. 12B is a graph comparing the passage characteristics and isolation characteristics of the multiplexers according to Example 3 and Comparative Example 3.
- the circuit configuration of the multiplexer according to Comparative Example 3 is the same as the circuit configuration of the multiplexer according to Example 3, but a receiving filter (elastic wave filter 40) is configured as compared with the multiplexer according to Example 3.
- the difference is that the electrode finger pitch P (k) of the vertically coupled resonance portion is regularly distributed. That is, the standard deviation SD of the pitch deviation rate D (k) of the vertically coupled resonance portion constituting the receiving filter according to Comparative Example 3 is less than 1.4%.
- Example 3 is a comparative example due to the improvement of the attenuation characteristic of the reception filter.
- the isolation characteristic in the transmission band (inside the broken line circle in the figure) is improved as compared with 3.
- the electrode finger pitch P (k) of the longitudinally coupled resonance portion is irregularly distributed in the third embodiment. It is understood that by increasing the standard deviation SD of the pitch deviation rate D (k), the excitation of unnecessary acoustic waves can be inhibited and the propagation of unnecessary signals can be suppressed.
- the electrode finger pitch P (k) is not constant, it is assumed that the manufacturing variation of the electrode finger pitch P (k) becomes large among the IDT electrodes, and the passage characteristics deteriorate due to this.
- the electrode finger pitch P (k) of the comb-shaped electrode 11b connected to the ground is constant, so that at least the comb-shaped electrode 11b
- the electrode finger pitch P (k) can be manufactured with high accuracy.
- the manufacturing variation of the electrode finger pitch P (k) between the IDT electrodes can be reduced, so that deterioration of the passing characteristics can be suppressed.
- the electrode finger pitch in the first comb-shaped electrode to which the signal potential (HOT) is applied is arranged as the arrangement configuration of the IDT electrode of the vertically coupled resonance portion of the receiving filter and the electrode finger of the reflector. Due to the irregularity of P (k) and the regularity (equal pitch) of the electrode finger pitch P (k) in the second comb-shaped electrode connected to the ground, the pitch deviation rate D (k) in the IDT electrode and the reflector. ) Is set to 1.4% or more, but the standard deviation SD is not limited to this.
- FIG. 13 is a configuration diagram of the multiplexer 200 and its peripheral circuit according to the fourth embodiment.
- the multiplexer 200 includes an elastic wave filter 41, a filter 51, and a common terminal 160.
- the multiplexer 200 is connected to the antenna 2 at the common terminal 160.
- An impedance matching circuit may be connected to the path connecting the common terminal 160 and the antenna 2.
- the filter 51 is applied to, for example, the LTE Band 26 reception filter.
- the filter structure of the filter 51 is arbitrary.
- the elastic wave filter 41 is applied to, for example, an LTE Band 26 transmission filter.
- the input / output terminal 140 of the filter 51 and the input / output terminal 110 of the elastic wave filter 41 are connected to the common terminal 160, and the multiplexer 200 according to this embodiment is applied to the duplexer of Band 26 of LTE.
- the elastic wave filter 41 includes a filter circuit 43 and a longitudinally coupled resonator 42.
- the filter circuit 43 is provided on the piezoelectric substrate 60.
- the filter circuit 43 is connected to the input / output terminals 110 and 120, is composed of one or more elastic wave resonators, and has a first frequency band as a pass band.
- the first frequency band is, for example, the LTE Band 26 transmission band.
- the longitudinally coupled resonator 42 has IDT electrodes 42a and 42b provided on the substrate 60 and juxtaposed in the elastic wave propagation direction, and includes an input / output terminal 110 and a node on the path connecting the input / output terminals 110 and 120. It is an additional circuit that is connected to and generates a signal of opposite phase with respect to a signal component of a predetermined frequency band other than the first frequency band that passes through the filter circuit 43.
- the longitudinal coupling resonator 42 is a longitudinal coupling type surface acoustic wave resonator composed of a surface acoustic wave resonator having an IDT electrode 42a and a surface acoustic wave resonator having an IDT electrode 42b.
- One end (IDT electrode 42a) of the vertically coupled resonator 42 is connected to the input / output terminal 110, and the other end (IDT electrode 42b) is connected to the series arm of the filter circuit 43.
- One end and the other end of the vertically coupled resonator 42 may be connected to a node on the series arm path connecting the input / output terminals 110 and 120 of the filter circuit 43.
- the longitudinally coupled resonator 42 may include reflectors arranged so as to be adjacent to the IDT electrodes 42a and 42b in the elastic wave propagation direction. Further, the number of IDT electrodes included in the longitudinally coupled resonator 42 may be 3 or more.
- the longitudinally coupled resonator 42 may include reflectors arranged so as to be adjacent to the IDT electrodes 42a and 42b in the elastic wave propagation direction. Further, the longitudinal coupling resonator 42 may be a surface acoustic wave filter made of a surface acoustic wave resonator having an IDT electrode, a transversal type resonator, or a transversal type filter.
- the signal component of the predetermined frequency band generated by the longitudinal coupling resonator 42 and the signal transmitted through the filter circuit 43 to be canceled (for example, in the reception band of Band 26 of LTE).
- the amplitude of the added signal can be made smaller than the amplitude of the original signal component to be canceled.
- the cancel signal component generated by the longitudinally coupled resonator 42 is a signal having the same phase and the same amplitude as the signal component to be canceled after passing through the filter circuit 42.
- At least one of the IDT electrodes 42a and 42b and the reflector has a standard deviation SD of the pitch deviation rate D (k) in the above histogram of 1.4% or more.
- the acoustic wave corresponding to the predetermined frequency band of the longitudinally coupled resonator 42 propagates on the substrate 60, for example, the phase of the acoustic wave excited by the electrode finger Fe (k) and the electrode finger Fe (k + 2).
- the acoustic impedance is likely to be inconsistent. Therefore, it is possible to suppress the excitation of the acoustic wave corresponding to the predetermined frequency band.
- FIG. 14 is a graph comparing the passing characteristics of the elastic wave filters according to Example 4, Comparative Example 4, and Comparative Example 5.
- the elastic wave filter 41 according to the fourth embodiment has a standard deviation SD of the pitch deviation rate D (k) of 1.5%.
- the circuit configuration of the elastic wave filter according to Comparative Example 4 is only that the standard deviation SD of the pitch deviation rate D (k) is 1.1% as compared with the elastic wave filter 41 according to Example 4. different.
- the circuit configuration of the elastic wave filter according to Comparative Example 5 is different from that of the elastic wave filter 41 according to Example 4 only in that it does not have the longitudinally coupled resonator 42.
- the elastic wave filter 41 according to the fourth embodiment is larger than the pass band (transmission band) as compared with the elastic wave filters according to the comparative examples 4 and 5.
- the amount of attenuation in the attenuation band (reception band) located on the high frequency side is large, and the amount of attenuation in the attenuation band (reception band) is large.
- the attenuation of the attenuation band (reception band) of the elastic wave filter 41 according to the fourth embodiment is large is that the attenuation band (reception) is caused by the effect of suppressing the out-of-band excitation by the random pitch in the longitudinally coupled resonator 42. It is understood that this is due to the improvement of the ripple caused by the vertically coupled resonator 42, which has reduced the amount of attenuation in the high frequency region in the band).
- the band in which the amount of attenuation increases in the attenuation band (reception band) of the elastic wave filter 41 according to the fourth embodiment is widened because of the above random pitch, that is, the IDT electrode 42a and the IDT electrode 42b of the vertically coupled resonator 42. It is understood that this is due to the optimization of the propagation characteristics between and.
- the multiplexer 200 in which the isolation characteristic between the elastic wave filter 41 and the filter 51 is improved.
- the elastic wave filter 40 is provided on the piezoelectric substrate 60, the plurality of IDT electrodes provided on the substrate 60 and juxtaposed in the elastic wave propagation direction, and the plurality of IDT electrodes.
- a vertically coupled resonator 1 having a reflector arranged so as to be adjacent to the elastic wave propagation direction is provided, and each of the plurality of IDT electrodes and the reflector extends in a direction intersecting the elastic wave propagation direction.
- It is composed of a plurality of electrode finger Fes arranged in parallel with each other, and (1) the distance between the electrode finger Fe (k) (k is an integer of 2 or more) and the electrode finger Fe (k + 1) is the kth electrode.
- finger pitch P (k) It is defined as finger pitch P (k), and (2) electrode finger pitch P (2) in three adjacent electrode fingers, electrode finger Fe (k-1), electrode finger Fe (k), and electrode finger Fe (k + 1).
- the pitch deviation rate D (k) is calculated by calculating the pitch deviation rate D (k) for all the electrode fingers of the IDT electrode or the reflector including the three adjacent electrode fingers.
- a histogram of deviation rate D (k) at least one of the plurality of IDT electrodes and reflectors has a standard deviation SD of pitch deviation rate D (k) of 1.4% or more in the histogram.
- the acoustic wave corresponding to the frequency band outside the pass band of the elastic wave filter 40 propagates on the substrate 60, for example, the phase of the acoustic wave excited by the electrode finger Fe (k) and the electrode finger Fe (k + 2).
- the phase of the acoustic wave excited by is likely to be out of phase, and the acoustic impedance is likely to be inconsistent. Therefore, it is possible to suppress the excitation of the acoustic wave corresponding to the frequency band outside the pass band of the elastic wave filter 40.
- each of the plurality of IDT electrodes has a first comb shape composed of a part of the electrode fingers Fe of the plurality of electrode fingers Fe and a bus bar electrode connecting one ends of the part of the electrode fingers. It has an electrode, a second comb-shaped electrode composed of an electrode finger of another portion of the plurality of electrode fingers, and a bus bar electrode connecting the other ends of the electrode fingers of the other portion, and connected to a ground. ..
- the electrode finger forming the first comb-shaped electrode and the electrode finger forming the second comb-shaped electrode are interleaved with each other, and at least one of the plurality of IDT electrodes has a pitch deviation rate D in the histogram.
- the standard deviation SD of (k) is 1.4% or more, and the electrode finger pitches of the adjacent electrode finger Fes in the electrode finger Fe constituting the second comb-shaped electrode may be equal over the second comb-shaped electrode.
- the electrode finger pitch P (k) is not constant, it is expected that the manufacturing variation of the electrode finger pitch between the IDT electrodes will be large, and the passage characteristics will be particularly deteriorated.
- the electrode finger pitch P (k) of the second comb-shaped electrode connected to the ground is constant. Since the electrode finger pitch P (k) of the second comb-shaped electrode can be manufactured with high accuracy, deterioration of the passing characteristics can be suppressed.
- At least one of the plurality of IDT electrodes has a standard deviation SD of the pitch deviation rate D (k) in the histogram of 1.4% or more, and adjacent electrode fingers in the electrode fingers constituting the first comb-shaped electrode.
- the electrode finger pitch P (k) of the above may be equal over the first comb-shaped electrode.
- the electrode finger pitch P (k) of the first comb-shaped electrode to which the signal potential (HOT) is applied is constant. Since the electrode finger pitch P (k) of the first comb-shaped electrode can be manufactured with high accuracy, deterioration of passage characteristics can be suppressed.
- At least one of the plurality of IDT electrodes has a standard deviation SD of the pitch deviation rate D (k) in the histogram of 1.4% or more, and the reflector has a pitch deviation rate D (k) in the histogram.
- the standard deviation SD may be less than 1.4%.
- one of the plurality of IDT electrodes has a standard deviation SD of the pitch deviation rate D (k) of 1.4% or more in the histogram, and the other IDT electrode among the plurality of IDT electrodes
- the standard deviation of the pitch deviation rate D (k) in the histogram may be less than 1.4%.
- the attenuation characteristics can be improved by setting only the IDT electrode, which greatly affects the attenuation characteristics, to an irregular pitch, and the characteristic deterioration due to manufacturing variation can be suppressed by setting the other IDT electrodes to a regular pitch.
- each of the plurality of IDT electrodes has a standard deviation SD of the pitch deviation rate D (k) in the histogram of less than 1.4%, and the reflector has a standard deviation of the pitch deviation rate D (k) in the histogram. May be 1.4% or more.
- the elastic wave filter 41 is a filter circuit having a piezoelectric substrate 60, provided on the substrate 60, connected to input / output terminals 110 and 120, composed of elastic wave resonators, and having a first frequency band as a passing band. It has a plurality of IDT electrodes 42a and 42b provided on the substrate 60 and juxtaposed in the elastic wave propagation direction, and has an input / output terminal 110, an input / output terminal 120, and an input / output terminal 110 and an input / output terminal 120.
- An IDT electrode including a longitudinally coupled resonator 42 that is connected to at least one of the connecting paths and generates signals having different phases for signal components in a predetermined frequency band other than the first frequency band that passes through the filter circuit 43.
- the standard deviation of D (k) may be 1.4% or more.
- the attenuation amount of the predetermined attenuation band in the filter circuit 43 can be increased, and the band in which the attenuation amount in the attenuation band becomes large can be widened.
- the multiplexer 100 has a common terminal 160, an elastic wave filter 40 having input / output terminals 110 and 120, and input / output terminals 140 and 150, and has a different pass band from the elastic wave filter 40.
- a filter 50 is provided, and the common terminal 160 is connected to the input / output terminals 110 and 140.
- the elastic wave filter and multiplexer according to the present invention have been described with reference to embodiments and examples, but the elastic wave filter and multiplexer of the present invention is not limited to the above embodiments and examples. .. Other embodiments realized by combining arbitrary components in the above-described embodiments and examples, and various modifications that can be conceived by those skilled in the art without departing from the gist of the present invention with respect to the above-described embodiments and examples.
- the present invention also includes various devices incorporating the elastic wave filter and the multiplexer in the above-described embodiments and examples.
- the duplexer applied to the LTE Band 26 is exemplified as the multiplexer
- the receiving filter applied to the LTE Band 8 is exemplified as the elastic wave filter. It also applies to communication bands other than LTE Band 8 and Band 26.
- the multiplexer can be applied not only to a duplexer but also to a triplexer in which three filters are commonly connected to an antenna, a hexaplexer in which three duplexers are commonly connected at a common terminal, and the like. That is, the multiplexer only needs to include two or more filters.
- the multiplexer according to the present invention is not limited to a configuration including both a transmission filter and a reception filter, and may have a configuration including only a plurality of transmission filters or only a plurality of reception filters.
- the present invention can be widely used as a transmission / reception filter and a multiplexer used in the front end of a wireless communication terminal that requires low loss in the pass band and high attenuation outside the pass band.
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Abstract
Description
[1.実施の形態に係る弾性波フィルタ40の構成]
図1は、実施の形態に係る弾性波フィルタ40の回路構成図である。また、図2は、実施の形態に係る縦結合共振器1の電極構成を示す概略平面図である。図2には、縦結合共振器1を構成するIDT電極および反射器の平面レイアウト構成およびIDT電極間の電気的な接続状態が示されている。なお、図2に示された縦結合共振器1は、IDT電極の典型的な平面レイアウト構成を説明するためのものであって、IDT電極を構成する電極指の本数、長さおよび電極指ピッチなどは、これに限定されない。
図2に示すように、IDT電極11~15、21~25、反射器19A、19B、29Aおよび29Bのそれぞれは、弾性波伝搬方向と交差する方向に延伸し、互いに平行に配置された複数の電極指Feで構成されている。
図7は、実施例1に係るマルチプレクサ100およびその周辺回路の構成図である。同図に示すように、マルチプレクサ100は、弾性波フィルタ40と、フィルタ50と、共通端子160と、を備える。マルチプレクサ100は、共通端子160においてアンテナ2に接続されている。共通端子160とアンテナ2との接続経路とグランドとの間には、インピーダンス整合用のインダクタ3が接続されている。なお、インダクタ3は共通端子160とアンテナ2との間に直列に接続されてもよい。なお、インダクタ3は、マルチプレクサ100に含めた構成としてもよいし、マルチプレクサ100に外付けされた構成であってもよい。また、インダクタ3は、キャパシタであってもよく、または、インダクタおよびキャパシタからなる合成回路であってもよい。
図11Aは、実施例2に係る弾性波フィルタ40Aの回路構成図である。同図に示すように、弾性波フィルタ40Aは、縦結合共振部10Aと、直列腕共振子33sおよび34sと、並列腕共振子33pおよび34pと、入出力端子110および120と、を備える。実施例2に係る弾性波フィルタ40Aは、実施の形態に係る弾性波フィルタ40と比較して、縦結合共振部10Aの構成が主として異なる。以下、実施例2に係る弾性波フィルタ40Aについて、実施の形態に係る弾性波フィルタ40と同じ構成については説明を省略し、異なる構成を中心に説明する。
実施例3に係るマルチプレクサは、図7に示された実施例1に係るマルチプレクサ100の回路構成と同じであるが、実施例1に係るマルチプレクサ100と比較して、受信用フィルタを構成する縦結合共振部の電極指ピッチP(k)の分布態様が異なる。
図13は、実施例4に係るマルチプレクサ200およびその周辺回路の構成図である。同図に示すように、マルチプレクサ200は、弾性波フィルタ41と、フィルタ51と、共通端子160と、を備える。マルチプレクサ200は、共通端子160においてアンテナ2に接続されている。なお、共通端子160とアンテナ2とを結ぶ経路に、インピーダンス整合回路が接続されていてもよい。
以上のように、本実施の形態に係る弾性波フィルタ40は、圧電性を有する基板60と、基板60に設けられ、弾性波伝搬方向に並置された複数のIDT電極と、複数のIDT電極に対して弾性波伝搬方向に隣り合うように配置された反射器と、を有する縦結合共振器1を備え、複数のIDT電極および反射器のそれぞれは、弾性波伝搬方向と交差する方向に延伸し、互いに平行に配置された複数の電極指Feで構成されており、(1)電極指Fe(k)(kは2以上の整数)と電極指Fe(k+1)との距離をk番目の電極指ピッチP(k)と定義し、(2)電極指Fe(k-1)、電極指Fe(k)、電極指Fe(k+1)という隣り合う3本の電極指において、電極指ピッチP(k)と、電極指ピッチP(k-1)およびP(k+1)の平均である区間平均電極指ピッチPM(k)との差分を、上記隣り合う3本の電極指が含まれるIDT電極または反射器が有する電極指全体の平均ピッチである全体平均電極指ピッチPTで除した値を、k番目の電極指のピッチ偏差率D(k)と定義し、(3)k番目の電極指のピッチ偏差率D(k)を、上記隣り合う3本の電極指が含まれるIDT電極または反射器が有する全ての電極指について算出して得られたピッチ偏差率D(k)の分布を、ピッチ偏差率D(k)のヒストグラムと定義した場合、上記複数のIDT電極および反射器の少なくとも1つは、上記ヒストグラムにおけるピッチ偏差率D(k)の標準偏差SDが1.4%以上である。
以上、本発明に係る弾性波フィルタおよびマルチプレクサについて、実施の形態および実施例を挙げて説明したが、本発明の弾性波フィルタおよびマルチプレクサは、上記実施の形態および実施例に限定されるものではない。上記実施の形態および実施例における任意の構成要素を組み合わせて実現される別の実施の形態や、上記実施の形態および実施例に対して本発明の主旨を逸脱しない範囲で当業者が思いつく各種変形を施して得られる変形例や、上記実施の形態および実施例における弾性波フィルタおよびマルチプレクサを内蔵した各種機器も本発明に含まれる。
2 アンテナ
3 インダクタ
10、10A、20 縦結合共振部
11、12、13、14、15、21、22、23、24、25、42a、42b IDT電極
11a、11b、12a、12b、13a、13b、14a、14b、15a、15b、21a、21b、22a、22b、23a、23b、24a、24b、25a、25b 櫛形電極
19A、19B、29A、29B 反射器
31s、32s、33s、34s、51s、52s、53s、54s 直列腕共振子
31p、32p、33p、34p、51p、52p、53p 並列腕共振子
40、40A、41 弾性波フィルタ
42 縦結合共振器
43 フィルタ回路
50、51 フィルタ
60 基板
100、200 マルチプレクサ
110、120、140、150 入出力端子
130 端子
160 共通端子
D ピッチ偏差率
Fe 電極指
P 電極指ピッチ
PM 区間平均電極指ピッチ
PT 全体平均電極指ピッチ
SD 標準偏差
Claims (8)
- 圧電性を有する基板と、前記基板に設けられ、弾性波伝搬方向に並置された複数のIDT(InterDigital Transducer)電極と、前記複数のIDT電極に対して前記弾性波伝搬方向に隣り合うように配置された反射器と、を有する縦結合共振器を備えた弾性波フィルタであって、
前記複数のIDT電極および前記反射器のそれぞれは、前記弾性波伝搬方向と交差する方向に延伸し、互いに平行に配置された複数の電極指で構成されており、
(1)前記弾性波伝搬方向におけるk(kは2以上の整数)番目の電極指と(k+1)番目の電極指との距離をk番目の電極指ピッチと定義し、
(2)(k-1)番目の電極指、k番目の電極指、および(k+1)番目の電極指という隣り合う3本の電極指において、k番目の電極指ピッチと、(k-1)番目の電極指ピッチおよび(k+1)番目の電極指ピッチの平均である区間平均電極指ピッチとの差分を、前記隣り合う3本の電極指が含まれるIDT電極または反射器が有する電極指全体の平均ピッチである全体電極指ピッチで除した値を、k番目の電極指のピッチ偏差率と定義し、
(3)前記k番目の電極指のピッチ偏差率を、前記隣り合う3本の電極指が含まれるIDT電極または反射器が有する全ての電極指について算出して得られた前記ピッチ偏差率の分布を、前記ピッチ偏差率のヒストグラムと定義した場合、
前記複数のIDT電極および前記反射器の少なくとも1つは、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%以上である、
弾性波フィルタ。 - 前記複数のIDT電極のそれぞれは、
前記複数の電極指のうちの一部の電極指と、当該一部の電極指の一方端同士を接続するバスバー電極と、で構成された第1櫛形電極と、
前記複数の電極指のうちの他部の電極指と、当該他部の電極指の他方端同士を接続するバスバー電極と、で構成され、グランドに接続された第2櫛形電極と、を有し、
前記第1櫛形電極を構成する電極指と、前記第2櫛形電極を構成する電極指とは、互いに間挿し合っており、
前記複数のIDT電極の少なくとも1つは、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%以上であり、当該少なくとも1つのIDT電極の前記第2櫛形電極を構成する電極指における隣り合う電極指の電極指ピッチは、前記第2櫛形電極にわたり等しい、
請求項1に記載の弾性波フィルタ。 - 前記複数のIDT電極のそれぞれは、
前記複数の電極指のうちの一部の電極指と、当該一部の電極指の一方端同士を接続するバスバー電極と、で構成された第1櫛形電極と、
前記複数の電極指のうちの他部の電極指と、当該他部の電極指の他方端同士を接続するバスバー電極と、で構成され、グランドに接続された第2櫛形電極と、を有し、
前記第1櫛形電極を構成する電極指と、前記第2櫛形電極を構成する電極指とは、互いに間挿し合っており、
前記複数のIDT電極の少なくとも1つは、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%以上であり、当該少なくとも1つのIDT電極の前記第1櫛形電極を構成する電極指における隣り合う電極指の電極指ピッチは、前記第1櫛形電極にわたり等しい、
請求項1に記載の弾性波フィルタ。 - 前記複数のIDT電極の少なくとも1つは、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%以上であり、
前記反射器は、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%未満である、
請求項1~3のいずれか1項に記載の弾性波フィルタ。 - 前記複数のIDT電極のうちの一のIDT電極は、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%以上であり、
前記複数のIDT電極のうちの他のIDT電極は、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%未満である、
請求項1~4のいずれか1項に記載の弾性波フィルタ。 - 前記複数のIDT電極のそれぞれは、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%未満であり、
前記反射器は、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%以上である、
請求項1に記載の弾性波フィルタ。 - 圧電性を有する基板と、
前記基板に設けられ、第1入出力端子および第2入出力端子に接続され、弾性波共振子からなり、第1周波数帯域を通過帯域とするフィルタ回路と、
前記基板に設けられ、弾性波伝搬方向に並置された複数のIDT電極を有し、前記第1入出力端子、前記第2入出力端子、および前記第1入出力端子と前記第2入出力端子とを結ぶ経路の少なくともいずれかに接続され、前記フィルタ回路を通過する前記第1周波数帯域以外の所定の周波数帯域の信号成分に対して異なる位相の信号を生成する縦結合共振器と、を備え、
前記複数のIDT電極は、前記弾性波伝搬方向と交差する方向に延伸し、互いに平行に配置された複数の電極指で構成されており、
(1)前記弾性波伝搬方向におけるk(kは2以上の整数)番目の電極指と(k+1)番目の電極指との距離をk番目の電極指ピッチと定義し、
(2)(k-1)番目の電極指、k番目の電極指、および(k+1)番目の電極指という隣り合う3本の電極指において、k番目の電極指ピッチと、(k-1)番目の電極指ピッチおよび(k+1)番目の電極指ピッチの平均である区間平均電極指ピッチとの差分を、前記隣り合う3本の電極指が含まれるIDT電極が有する電極指全体の平均ピッチである全体電極指ピッチで除した値を、k番目の電極指のピッチ偏差率と定義し、
(3)前記k番目の電極指のピッチ偏差率を、前記隣り合う3本の電極指が含まれるIDT電極が有する全ての電極指について算出して得られた前記ピッチ偏差率の分布を、前記ピッチ偏差率のヒストグラムと定義した場合、
前記複数のIDT電極の少なくとも1つは、前記ヒストグラムにおける前記ピッチ偏差率の標準偏差が1.4%以上である、
弾性波フィルタ。 - 共通端子と、
第1入出力端子および第2入出力端子を有する請求項1~7のいずれか1項に記載の弾性波フィルタと、
第3入出力端子および第4入出力端子を有し、前記弾性波フィルタと通過帯域が異なる第1フィルタと、を備え、
前記共通端子は、前記第1入出力端子および前記第3入出力端子に接続されている、
マルチプレクサ。
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