WO2021009386A1 - Film métallisé, appareil de fabrication d'un film métallisé, procédé de fabrication d'un film métallisé et condensateur à film comprenant le film métallisé - Google Patents

Film métallisé, appareil de fabrication d'un film métallisé, procédé de fabrication d'un film métallisé et condensateur à film comprenant le film métallisé Download PDF

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Publication number
WO2021009386A1
WO2021009386A1 PCT/EP2020/074795 EP2020074795W WO2021009386A1 WO 2021009386 A1 WO2021009386 A1 WO 2021009386A1 EP 2020074795 W EP2020074795 W EP 2020074795W WO 2021009386 A1 WO2021009386 A1 WO 2021009386A1
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Prior art keywords
layer
magnetron sputtering
deposition
units
deposited
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PCT/EP2020/074795
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English (en)
Inventor
Ramón GARCÍA ROJO
Sudipta Sarkar
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Tdk Electronics Ag
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Publication of WO2021009386A1 publication Critical patent/WO2021009386A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
    • H01G13/006—Apparatus or processes for applying terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
    • H01G13/06—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00 with provision for removing metal surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/015—Special provisions for self-healing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/32—Wound capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
    • H01G13/02—Machines for winding capacitors

Definitions

  • Metallized film apparatus for manufacturing a metallized film, method for manufacturing a metallized film and film capacitor comprising the metallized film.
  • the invention relates to a method for manufacturing a
  • the invention relates to a metallized film manufactured by the method and a film capacitor comprising the metallized film.
  • a film capacitor is widespread devices for energy storage in a variety of electronic applications.
  • a film capacitor comprises a substrate which is sandwiched between two electrodes which are deposited on surfaces of the
  • the lifetime of the film capacitor strongly depends on the quality of the electrodes.
  • the electrodes are commonly metal layers deposited on top of a plastic film substrate.
  • the adhesion of the electrodes on the surfaces of the substrate is a key feature of the
  • the present invention provides an improved method for manufacturing a metallized film which can be used to produce a film capacitor. Moreover, the present invention provides an apparatus for manufacturing the metallized film , a metallized film which is manufactured by the method and a film capacitor comprising the metallized film.
  • a metallized film is a polymer based substrate comprising at least one main surface, wherein at least one metal layer is deposited on top of the main surface.
  • the polymer based substrate may be a thin and flexible substrate, which can be used in a roll-to- roll process.
  • a main surface of the polymer based substrate is a surface whose size is independent from the thickness of the substrate.
  • the polymer based substrate comprises two main surfaces which are located on opposite surfaces of the substrate.
  • a method for manufacturing a metallized film is given by claim 1. Further embodiments of the method, an apparatus for manufacturing the metallized film , a metallized film and a film capacitor comprising the metallized film are given by further claims.
  • the present invention provides a method for manufacturing a metallized film comprising the steps:
  • the pre-nucleation layer is sandwiched between the polymer based substrate and the metallization layer .
  • a pre-nucleation layer is a layer, which is deposited on the main surface of the polymer based substrate promoting the nucleation of the metallization layer. This effect of the pre-nucleation layer improves the adhesion of the metallization layer on the substrate compared to a metallization layer, which is deposited on a substrate without a pre-nucleation layer.
  • a metallization layer is a layer which represents the actual electrode layer of a film
  • manufacturing the metallized film comprises the steps:
  • a surface layer is a layer which is deposited on top of the metallization layer protecting the metallization layer from negative environmental influences, such as temperature and humidity.
  • the utilization of magnetron sputtering enables the deposition of thin and uniform pre-nucleation layers. It is also possible to provide a plurality of pre-nucleation layers, which are stacked one upon the other. Each of the pre-nucleation layers comprises a different composition, can be conducted by magnetron sputtering with less effort than with other deposition techniques. Furthermore, stoichiometric compounds or alloys may be deposited as pre-nucleation layers by magnetron sputtering. The aforementioned characteristics of the magnetron sputtering are also applicable for the surface layer relating to the second aspect of the invention. Due to the aforementioned features, it is possible to form pre-nucleation layers by magnetron sputtering, which
  • sputtering enables forming surface layers, which effectively protect the metallization layer from environmental
  • the deposition of the pre-nucleation layer and/or the surface layer by magnetron sputtering has
  • the present invention provides an apparatus for manufacturing a metallized film wherein the apparatus
  • the magnetron sputtering units can easily be incorporated in a commercial metallization apparatus, which utilizes a layer deposition method, which can be different from magnetron sputtering . Accordingly, the costs for fabricating the aforementioned apparatus, which comprises one or more magnetron sputtering units and one or more layer deposition units, which utilize deposition methods which can be different from magnetron sputtering, can be kept low. This keeps the total costs of the metallized film low.
  • the type of magnetron sputtering utilized by the magnetron sputtering units is not limited.
  • the type of the magnetron sputtering can be selected from a group of magnetron sputtering types comprising at least direct current pulsed sputtering, mid-frequency alternating current
  • the type of magnetron sputtering cathodes is not limited to a specific type.
  • the type of the cathode may be planar or rotatable.
  • the number of the cathodes in a magnetron sputtering unit is not limited.
  • the magnetron sputtering units can comprise single or double cathodes.
  • the number of magnetron sputtering units is not limited.
  • the magnetron sputtering units can be single or multiples.
  • Targets utilized in the magnetron sputtering units may comprise single elements or multiple elements. Targets comprising multiple elements can be utilized for the
  • the present invention also provides a metallized film which is manufactured by the method for manufacturing a metallized film of the present invention, wherein the metallized film comprises at least one pre-nucleation layer, which is
  • the metallized film comprises a surface layer which is deposited on top of the metallization layer, wherein the surface layer comprises at least one material selected from a group comprising AlOx,
  • the metallized film typically comprises a dielectric polymer.
  • the dielectric polymer is selected from a group of dielectric polymers comprising at least polypropylene, polyphenylene sulfide, polyethylene terephthalate, polyimide and polyureas.
  • the invention provides a film capacitor comprising a metallized film, wherein the metallized film is manufactured by the method for manufacturing a metallized film of the present invention.
  • the surface layer may be deposited on top of the metallization layer by magnetron sputtering wherein the pre-nucleation layer is deposited on the main surface of the polymer substrate by magnetron sputtering and the
  • metallization layer is deposited on top of the pre-nucleation layer by a layer deposition method which can be different from magnetron sputtering.
  • layer deposition methods which can be different from magnetron sputtering, can be used for layer deposition.
  • layer deposition methods can be atomic layer deposition, chemical vapor deposition and further physical vapor deposition techniques, such as thermal evaporation, electron beam evaporation and pulsed laser deposition .
  • the polymer based substrate may be any suitable material.
  • the polymer based substrate may be any suitable material.
  • the pre-treatment is conducted to improve the adhesion of the layers deposited on the main surface of the polymer based substrate.
  • the pre-treatment makes the main surface of the substrate more hydrophilic.
  • the main surface of the polymer based substrate is functionalized by the pre-treatment .
  • the utilized technique can be selected from a group comprising at least corona treatment, flame treatment and plasma treatment.
  • all aforementioned steps to manufacture the metallized film may be implemented in a roll-to-roll process.
  • the roll-to-roll process is a very common high throughput production method which enables the production of a large number of devices in a short time span. Accordingly, the production costs of the metallized film can be kept low.
  • the deposition methods for the deposition of the pre-nucleation layer and for the deposition of the metallization layer may be configured in such a way that each of the said layers comprises one or more metals selected from a group of metals comprising at least Al, Zn, Ag, Au, Cu, Cr, Li, Pt, Mg, Sn, Fe, Ni and any of their alloys.
  • the pre-nucleation layer comprises at least one metal selected from a group comprising at least Au, Ag, Al, Pt, Cr, Ni, Fe, Cu and any of their alloys
  • the metallization layer comprises at least one metal which is selected from a group comprising at least Zn, Mg, Sn, Li and any of their alloys.
  • At least one raw material may be utilized for the deposition of the surface layer, wherein the raw material is selected in such a way that said layer comprises at least one material selected from a group of materials comprising at least A10 x , SiC, SiO x , TiO x , Al and Mg.
  • a metal which is contained in the surface layer can be selected independently from a metal which is contained in the metallization layer.
  • the metallization layer comprises Zn as a main component, wherein the surface layer comprises A10 x as a main component.
  • the magnetron sputtering units and the layer deposition units may be arranged in such a way that in a first manufacturing step the pre-nucleation layer is deposited on the main surface of a polymer based substrate by the magnetron sputtering units and in a second manufacturing step the metallization layer is deposited on top of the pre- nucleation layer by the layer deposition units.
  • the pre-nucleation layer is deposited by magnetron sputtering on the main surface of the substrate before the metallization layer is deposited on top of the pre-nucleation layer by a layer deposition method which can be different from magnetron sputtering.
  • the apparatus may comprise magnetron sputtering units, layer deposition units, which utilize layer deposition methods, which can be different from magnetron sputtering, and one or more additional magnetron sputtering units.
  • the magnetron sputtering units, the additional magnetron sputtering units and the layer deposition units are arranged in such a way that in a first manufacturing step the pre-nucleation layer is deposited by the magnetron sputtering units, in a second film deposition step the metallization layer is deposited on top of the pre-nucleation layer by the layer deposition units and in a third deposition step the surface layer is deposited by the additional magnetron sputtering units.
  • the metallization layer is sandwiched between the pre-nucleation layer and the surface layer, wherein the pre-nucleation layer and the surface layer are deposited by magnetron sputtering and the metallization layer is deposited by a layer deposition method, which can be different from magnetron sputtering.
  • the magnetron sputtering units and the layer deposition units may be arranged in such a way that in a first manufacturing step the metallization layer is deposited directly on the main surface of the polymer based substrate by the layer deposition units and in a second manufacturing step, the surface layer is deposited on top of the metallization layer by the magnetron sputtering units.
  • the metallization layer is deposited on the main surface of the substrate without a previous deposition of a pre-nucleation layer.
  • the apparatus may comprise magnetron sputtering units, layer deposition units and additional layer deposition units, wherein the layer deposition units and the additional layer deposition units utilize layer deposition techniques which can be different from magnetron sputtering.
  • the magnetron sputtering units, the layer deposition units and the additional layer deposition units are arranged in such a way that in a first manufacturing step the pre- nucleation layer is deposited on the main surface of the polymer based substrate by the additional layer deposition units and in a second manufacturing step the metallization layer is deposited on top of the pre-nucleation layer by the layer deposition units and in a third manufacturing step the surface layer is deposited on top of the metallization layer by the magnetron sputtering units.
  • the pre- nucleation layer and the metallization layer are deposited by layer deposition methods which can be different from
  • the apparatus may comprise in addition to the magnetron sputtering units and the layer deposition units at least one pre-treatment unit.
  • the pre-treatment unit is arranged in such a way that the polymer based substrate is subjected to a pre-treatment, which activates the main surface of the polymer based substrate, before any film is deposited on the main surface of the polymer based substrate.
  • the pre-treatment is applied to a polymer based substrate which does not feature any film on its main surface. This step improves the adhesion of the films
  • the apparatus for manufacturing the metallized film may be adapted to perform a roll-to-roll process.
  • the roll-to-roll process enables a high throughput production of the metallized film leading to a reduction of the production costs of the metallized film.
  • the apparatus may be utilized to
  • the thickness of the layers which are deposited by magnetron sputtering can be influenced by the number of magnetron sputtering units which are incorporated in the apparatus for manufacturing the metallized film. So, the thickness of the layer which is deposited by the magnetron sputtering units can be increased by increasing the number of consecutively arranged magnetron sputtering units which are utilized to deposit the layer. So, an increased number of magnetron sputtering units results in an increased layer deposition rate leading to a thicker layer, which is
  • Figure 1 illustrates a cross sectional view of a metallized film
  • Figure 2 illustrates an apparatus for manufacturing a
  • Figure 3 illustrates another embodiment of the apparatus for manufacturing a metallized film
  • Figure 4 illustrates another embodiment of the apparatus for manufacturing a metallized film
  • Figure 5 illustrates another embodiment of the apparatus for manufacturing a metallized film.
  • Figure 1 illustrates in a cross sectional view a cut-out of a metallized film comprising a pre-nucleation layer 1 which is deposited on a main surface 2' of a polymer based substrate 2, a metallization layer 3 which is deposited on top of the pre-nucleation 1 layer and a surface layer 4 which is deposited on top of the metallization layer.
  • the substrate 2 comprises a commonly used dielectric polymer, such as polypropylene.
  • a metal containing pre-nucleation layer 1 is deposited by magnetron sputtering.
  • the metal which is contained in the pre-nucleation layer 1 can be selected from a group
  • the metallization layer 3 is deposited by a deposition method, which can be different from magnetron sputtering, on top of the pre-nucleation layer 1.
  • the metallization layer 3 is, for example, deposited by a layer deposition method such as atomic layer deposition, chemical vapor deposition, sputtering, thermal evaporation, pulse layer deposition or electron beam evaporation.
  • the surface layer 4 is deposited by magnetron sputtering.
  • the surface layer 4 contains a
  • the deposition of the pre- nucleation layer 1 by magnetron sputtering results in a good adhesion of the metallization layer 3 to the polymer based substrate 2, wherein the metallization layer 3 is protected from environmental influences by a surface layer 4.
  • Figure 2 illustrates an apparatus for manufacturing a
  • the apparatus is adopted to perform a roll- to-roll process.
  • the apparatus comprises an unwinder 100 wherein the polymer based substrate 2 is inserted as a roll, which is steadily unwound during the process.
  • the apparatus further comprises a re-winder 300 winding a first metallized film 213, which comprises the polymer based substrate 2, the pre-nucleation layer 1 and the metallization layer 3, to a roll.
  • a coating drum 200 is located between the unwinder 100 and the re-winder 300.
  • the curved arrows indicate the rotating direction of the unwinder, the re- winder and coating drum.
  • the straight arrows indicate the moving direction of the polymer based substrate 2 and the first metallized film 213.
  • the coating drum 200 is in charge of compensating thermal stress on the film during the evaporation by maintaining a temperature between 5 °C and -40 °C.
  • the deposition of the metallization layer 3 occurs at the coating drum 200.
  • a layer deposition method which can be different from magnetron sputtering is utilized for the deposition of the metallization layer 3.
  • a layer deposition unit 20, which utilizes layer deposition methods which can be different from magnetron sputtering is arranged in such a way that the deposition of the metallization layer 3 takes place at the coating drum 200.
  • the apparatus comprises a pre treatment unit 30 and a magnetron sputtering 10 unit which are arranged in such a way that the pre-treatment and the magnetron sputtering occur before the deposition of the metallization layer 3.
  • the magnetron sputtering unit 10 and the pre treatment unit 30 are arranged in such a way that the pre treatment occurs before the magnetron sputtering.
  • the pre treatment is utilized to activate the main surface 2' of the polymer based substrate 2 to enhance the adhesion of the layers which are deposited on the main surface 2 'of the polymer based substrate 2.
  • the pre-treatment unit 30 utilizes a technique, which is selected from a group comprising at least corona treatment, plasma treatment or flame treatment.
  • the pre-nucleation layer 1 is deposited on the main surface 2' of the polymer based
  • the metallization layer 3 is deposited on top of the pre- nucleation layer 1 by the layer deposition unit 20 at the coating drum 200 after deposition of the pre-nucleation layer 1. Subsequently, the first metallized film 213 is wound to a roll at the re-winder 300.
  • Figure 3 shows a further embodiment of the apparatus for manufacturing a metallized film.
  • the apparatus is similar to that illustrated in Figure 2 except that an additional magnetron sputtering unit 10' is arranged in such a way that a surface layer 4 is deposited on top of the metallization layer 3 by the additional magnetron sputtering unit.
  • the apparatus is configured to deposit the pre- nucleation layer 1 and a surface layer 4 by magnetron
  • a second metallized film 2134 which comprises the polymer based substrate 2, the pre-nucleation layer 1, the metallization layer 3 and the surface layer 4, is wound to a roll at a re-winder 300.
  • Figure 4 illustrates a further embodiment of the apparatus for manufacturing a metallized film.
  • the apparatus is similar to that illustrated in Figure 2 except that the magnetron sputtering unit 10 is now arranged in such way that the surface layer 4 is deposited on top of the metallization layer by the magnetron sputtering unit 10 after the
  • the metallization layer was deposited on the main surface 2 'of the polymer based substrate 2 by the layer deposition unit 20.
  • the magnetron sputtering unit 10 is now utilized to deposit the surface layer 4 and not to deposit the pre-nucleation layer 1.
  • the metallization layer 3 is deposited directly on the main surface 2' of the polymer based substrate 2 without a
  • Figure 5 illustrates a further embodiment of the apparatus for manufacturing a metallized film.
  • the apparatus is similar to that depicted in Figure 4, except that an additional layer deposition unit 20", which utilizes a layer deposition method, which can be different from magnetron sputtering, is arranged subsequent to the pre-treatment unit 30 and previous to the layer deposition unit 20. Accordingly, the pre- nucleation layer 1 and the metallization layer 3 are
  • the second metallized film 2134 which comprises the polymer based substrate 2, the pre-nucleation layer 1, the metallization layer 3 and the surface layer 4, is wound to a roll at a re-winder 300.
  • substrate may vary. Moreover also the number of magnetron sputtering units and layer deposition units may vary. List of Reference Signs

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un film métallisé, comprenant les étapes suivantes : a) dépôt d'au moins une couche de pré-nucléation (1) sur au moins une surface principale (2´) d'un substrat à base de polymère (2) par pulvérisation magnétron, b) dépôt d'au moins une couche de métallisation (3) sur la partie supérieure de la couche de pré-nucléation (1) par un procédé de dépôt, qui est une pulvérisation magnétron ou qui est différent de la pulvérisation magnétron. De plus, l'invention concerne un appareil de fabrication d'un film métallisé, un film métallisé fabriqué par le procédé et un condensateur à film comprenant le film métallisé.
PCT/EP2020/074795 2019-07-18 2020-09-04 Film métallisé, appareil de fabrication d'un film métallisé, procédé de fabrication d'un film métallisé et condensateur à film comprenant le film métallisé WO2021009386A1 (fr)

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Cited By (1)

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EP0840676B1 (fr) * 1996-04-18 2005-06-15 Nikko Materials USA, Inc. Stratifie souple ne contenant pas d'adhesif et son procede de fabrication
EP1593754A1 (fr) * 2002-12-26 2005-11-09 Toppan Printing Co., Ltd. Dispositif de depot sous vide et procede de production d'une couche de depot par evaporation sous vide
US20060024428A1 (en) * 2004-08-02 2006-02-02 Jeong Cho Method and apparatus for manufacturing laminate for flexible printed circuit board having metal plated layer using vacuum deposition
EP1849885A1 (fr) * 2006-04-28 2007-10-31 Applied Materials GmbH & Co. KG Métallisation utilisant une couche germinale mince déposée dans un procédé assisté par plasma
US20150302990A1 (en) * 2012-11-21 2015-10-22 3M Innovative Properties Company Multilayer film including first and second dielectric layers
US20160274050A1 (en) * 2015-03-18 2016-09-22 Materion Corporation Methods for optimized production of multilayer metal/transparent conducting oxide (tco) constructs
KR20180028654A (ko) * 2016-09-09 2018-03-19 주식회사 넥스필 색상을 갖는 열차단 필름 및 그 제조방법

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EP0840676B1 (fr) * 1996-04-18 2005-06-15 Nikko Materials USA, Inc. Stratifie souple ne contenant pas d'adhesif et son procede de fabrication
EP1593754A1 (fr) * 2002-12-26 2005-11-09 Toppan Printing Co., Ltd. Dispositif de depot sous vide et procede de production d'une couche de depot par evaporation sous vide
US20060024428A1 (en) * 2004-08-02 2006-02-02 Jeong Cho Method and apparatus for manufacturing laminate for flexible printed circuit board having metal plated layer using vacuum deposition
EP1849885A1 (fr) * 2006-04-28 2007-10-31 Applied Materials GmbH & Co. KG Métallisation utilisant une couche germinale mince déposée dans un procédé assisté par plasma
US20150302990A1 (en) * 2012-11-21 2015-10-22 3M Innovative Properties Company Multilayer film including first and second dielectric layers
US20160274050A1 (en) * 2015-03-18 2016-09-22 Materion Corporation Methods for optimized production of multilayer metal/transparent conducting oxide (tco) constructs
KR20180028654A (ko) * 2016-09-09 2018-03-19 주식회사 넥스필 색상을 갖는 열차단 필름 및 그 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115938804A (zh) * 2023-03-15 2023-04-07 四川省科学城久信科技有限公司 一种薄膜电容金属化膜片的制备方法

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