WO2021004331A1 - 掩膜结构和fcva设备 - Google Patents

掩膜结构和fcva设备 Download PDF

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Publication number
WO2021004331A1
WO2021004331A1 PCT/CN2020/099265 CN2020099265W WO2021004331A1 WO 2021004331 A1 WO2021004331 A1 WO 2021004331A1 CN 2020099265 W CN2020099265 W CN 2020099265W WO 2021004331 A1 WO2021004331 A1 WO 2021004331A1
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WO
WIPO (PCT)
Prior art keywords
mask
electrostatic chuck
main
mask structure
structure according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/099265
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English (en)
French (fr)
Inventor
史全宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to KR1020217035034A priority Critical patent/KR102338681B1/ko
Priority to SG11202112284TA priority patent/SG11202112284TA/en
Priority to JP2021566013A priority patent/JP7159487B2/ja
Priority to US17/608,617 priority patent/US11408064B2/en
Publication of WO2021004331A1 publication Critical patent/WO2021004331A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Definitions

  • the present invention relates to the technical field of semiconductor manufacturing, in particular to a mask structure and FCVA equipment.
  • an electrostatic chuck (Electrostatic Chuck, ESC) needs to be used to fix the processed workpiece (such as a wafer) by electrostatic adsorption to avoid the processed workpiece from moving during the processing.
  • an electrostatic chuck usually includes a dielectric layer for supporting the workpiece to be processed, and one or more electrodes are embedded in the dielectric layer.
  • a bipolar electrostatic chuck as an example, it may include two electrodes, which are respectively electrically connected to the positive and negative poles of the DC power supply to provide a DC voltage, so that the wafer is firmly attracted to the surface of the chuck by electrostatic attraction.
  • one approach is to make several bumps spaced apart on the surface of the electrostatic chuck, so that the back of the workpiece can only be in contact with the bumps, and not with other parts of the electrostatic chuck. , which can reduce the number of particles attached to the back of the workpiece.
  • One method for preparing the above bumps is to use physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) equipment to prepare bumps.
  • PVD Physical Vapor Deposition
  • the bumps made by PVD equipment have poor high temperature resistance and are prone to fall off. Used in high temperature environments.
  • the embodiment of the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a mask structure, which can conduct electricity and can prevent the side of the electrostatic chuck from being coated, so that a filter cathode can be applied Vacuum arc (Filtered Cathodic Vacuum Arc, hereinafter referred to as FCVA) process.
  • FCVA Vacuum arc
  • an embodiment of the present invention also provides an FCVA device, which adopts the above-mentioned mask structure provided by the embodiment of the present invention, and can utilize the FCVA process to produce bumps on the bearing surface of the electrostatic chuck.
  • the embodiments of the present invention provide a mask structure for manufacturing bumps on the carrying surface of an electrostatic chuck.
  • the mask structure includes a main mask plate and a side mask made of conductive metal. Diaphragm, in which,
  • the main mask is used to form a patterned film layer corresponding to the bumps on the carrying surface of the electrostatic chuck;
  • the side mask is used to completely shield the side surface of the electrostatic chuck to avoid the formation of a film layer on the side surface.
  • an embodiment of the present invention also provides an FCVA device, including a power supply, a chamber, and a graphite target, an electrostatic chuck, and a mask structure placed in the chamber, wherein the power supply is used to pass through The effect of the arc causes the graphite target to generate carbon plasma; the mask structure adopts the above-mentioned mask structure provided by the embodiment of the present invention, and is used to guide the deposited ions in the carbon plasma toward the carrying of the electrostatic chuck The surface moves, and the deposited ions passing by form a patterned film layer corresponding to the bumps on the bearing surface of the electrostatic chuck.
  • the mask structure includes a main mask plate and a side mask plate both made of conductive metal, so that when the bumps are manufactured, they can be grounded to maintain The whole is at ground potential, so that the deposited ions in the carbon plasma can be guided to move toward the electrostatic chuck, and at the same time, the deposited ions passing through the main mask form a patterned film layer corresponding to the bumps on the carrying surface of the electrostatic chuck.
  • the mask structure provided by the embodiments of the present invention can be applied to FCVA equipment due to its electrical conductivity and anti-side plating characteristics, and is used to manufacture bumps on the bearing surface of the electrostatic chuck by using FCVA.
  • FIG. 1 is a schematic structural diagram of an FCVA device provided by an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the mask structure provided by the embodiment of the present invention after assembly
  • Figure 3 is an enlarged view of area A in Figure 2;
  • FIG. 4A is a cross-sectional view of a floating lock assembly used in an embodiment of the present invention.
  • 4B is a side view of the floating locking assembly used in the embodiment of the present invention located on the back side of the electrostatic chuck;
  • FIG. 5 is a side view of the front side of the main mask used in the embodiment of the present invention.
  • Fig. 6 is a partial size diagram of a main mask used in an embodiment of the present invention.
  • PVD equipment is usually used to prepare bumps on the bearing surface of the electrostatic chuck.
  • the bumps made by PVD equipment have poor high temperature resistance and are prone to fall off, and thus cannot be used in high temperature environments.
  • the bumps can be prepared by using Filtered Cathodic Vacuum Arc (FCVA) equipment.
  • FCVA Filtered Cathodic Vacuum Arc
  • the bumps prepared by the FCVA equipment not only have high hardness and good wear resistance, but also can be used in high temperatures. In the environment (above 250°C).
  • the mask used in existing PVD equipment cannot be used in FCVA equipment. Therefore, if you want to use FCVA equipment to prepare bumps on the bearing surface of the electrostatic chuck , We need a mask that can be applied to FCVA equipment.
  • the embodiments of the present invention provide a mask structure, which can be applied to an FCVA device for manufacturing bumps on the carrying surface of an electrostatic chuck.
  • Fig. 1 is a schematic structural diagram of an FCVA device provided by an embodiment of the present invention.
  • the FCVA device uses filtered cathode vacuum arc technology (FCVA) to prepare bumps.
  • FCVA device may include a power supply 101, a chamber 102, a graphite target 103, an electrostatic chuck 104, and a mask structure 105 placed in the chamber 102.
  • the power source 101 is used to make the graphite target 103 generate carbon plasma through the action of an arc
  • the power source 101 is, for example, an arc (arc) power source.
  • the mask structure 105 is used to guide the deposited ions in the carbon plasma to form a film layer corresponding to the bumps on the bearing surface of the electrostatic chuck 104.
  • the so-called film layer corresponding to the bump means that the film layer has a designated pattern, and the designated pattern is the same as the mask pattern, that is, the pattern constituting the bump.
  • the above FCVA equipment can accurately control the energy of the carbon plasma according to different process requirements.
  • the above-mentioned FCVA equipment process can well control the resistivity of the bumps, so that the resistivity of the bumps can be controlled in the range of 10-4-109 ⁇ cm, so that the conductivity of the bumps can meet the requirements.
  • the carbon plasma when the carbon plasma moves toward the bearing surface, the carbon plasma is filtered and/or focused by a magnetic field.
  • the chamber 102 includes a first part 1021, a second part 1022, and a third part 1023 arranged in sequence along the direction of movement of the carbon plasma. These three parts are three interconnected spaces in the chamber 102.
  • the second part 1022 may be provided with a filtering magnetic field, which is used to filter macroscopic particles and atomic groups in the carbon plasma. After such a magnetic filtration treatment, the ionization rate of the ions used for deposition (abbreviated as deposition ions) can be as high as 100%, and larger particles can be filtered out.
  • the FCVA deposited ions have a higher and more uniform energy, so that they can form dense, high hardness, low resistivity, and super strong under low temperature conditions. Adhesive film layer.
  • a focusing magnetic field may be provided in the third part 1023 of the chamber 102 to concentrate the deposited ions to the electrostatic chuck, thereby depositing a hydrogen-free amorphous carbon layer on the carrying surface of the electrostatic chuck, and finally forming bumps .
  • the above-mentioned deposited ions are ions in the carbon plasma that have not been removed by magnetic filtration.
  • the ions can move toward the bearing surface of the electrostatic chuck under the guidance of the mask structure 105, and are deposited on the bearing surface to form
  • the above-mentioned deposited ions are, for example, metal ions (such as Ti ions) or ions formed by other materials that can be used to make bumps.
  • the above FCVA equipment can accurately control the energy of the carbon plasma according to different process requirements.
  • the above-mentioned FCVA equipment process can well control the resistivity of the bumps, so that the resistivity of the bumps can be controlled in the range of 10-4-109 ⁇ cm, so that the conductivity of the bumps can meet the requirements.
  • the above-mentioned mask structure 105 is a mask plate prepared in advance before the electrostatic chuck 104 is prepared. Since in the FCVA device, the electrostatic chuck 104 needs to be laterally installed in the chamber 102, for example, the electrostatic chuck 104 shown in FIG. 1 has a bearing surface vertically arranged, in this case, on the bearing surface While performing pattern coating, a mask structure that can protect the side surface of the electrostatic chuck 104 from being side-plated is required.
  • the side surface of the electrostatic chuck refers to the surface of the electrostatic chuck that is exposed to the plasma environment except the bearing surface.
  • the deposited ions will rush to the ground potential, which requires the use of conductive metal to make the mask, which can be grounded to maintain the overall ground potential to guide the deposited ions toward the electrostatic chuck
  • the bearing surface moves and is finally deposited on the bearing surface.
  • the embodiment of the present invention provides a mask structure, which can be applied to an FCVA device for manufacturing bumps on the carrying surface of the electrostatic chuck by using the FCVA process.
  • the electrostatic chuck 2 is laterally suspended and fixed in the chamber 102 of the FCVA device shown in FIG. 1 through the mounting plate 1 so that its bearing surface can be perpendicular to the horizontal plane.
  • the X direction is the horizontal direction
  • the plane of the Z direction and the Y direction are perpendicular to the X direction
  • the bearing surface of the electrostatic chuck 2 is parallel to the plane of the Z direction and the Y direction, that is, perpendicular to the X direction.
  • the "front” of all components mentioned in the text are the same surface as the bearing surface of the electrostatic chuck 2; the “back” of all the components mentioned in the text are the same as those of the electrostatic chuck 2.
  • the opposite surface of the bearing surface As shown in Figure 2, the direction of the "front” is opposite to that of the arrow in the X direction; the direction of the "back” is the same as that of the arrow in the X direction.
  • the mask structure includes a main mask 3 and a side mask 4 both made of conductive metal, wherein the main mask 3 is used to form a patterned film layer corresponding to the bumps on the carrying surface of the electrostatic chuck 2.
  • the main mask 3 includes a hollow part consistent with the shape and size of the bumps.
  • the hollow part does not block the bearing surface of the electrostatic chuck 2, so that during deposition, the deposited ions can be deposited on the electrostatic through the hollow part.
  • the area on the bearing surface of the chuck 2 corresponding to the hollowed-out portion, while the remaining area on the bearing surface that does not correspond to the hollowed-out portion will not have deposited ions deposited on it, thereby forming a patterned film on the bearing surface. That is, a bump is formed.
  • the side mask 4 is used to shield the side surface of the electrostatic chuck 2 to avoid the formation of a coating on the side surface, that is, to prevent the side surface of the electrostatic chuck 2 from being side-plated, thereby protecting the electrostatic chuck.
  • main mask 3 and side mask 4 are made of conductive metal, when manufacturing bumps, the two can be grounded to maintain the overall ground potential, so that the deposited ions in the carbon plasma can be directed toward the electrostatic card
  • the disk moves, and at the same time, the deposited ions passing through the main mask 3 form a patterned film layer corresponding to the bumps on the carrying surface of the electrostatic chuck.
  • the mask structure provided by the embodiment of the present invention can be applied to FCVA equipment due to its electrical conductivity and anti-side plating characteristics for manufacturing bumps on the bearing surface of the electrostatic chuck 2 using the FCVA process.
  • the electrostatic chuck 2 generally includes a main body portion 21 and an edge portion 22 protruding from the side of the main body portion 21, and the back surface 222 of the edge portion 22 is flush with the back surface 212 of the main body portion 21 , And the thickness of the edge portion 22 is smaller than the thickness of the main body portion 21.
  • the side mask 4 is used to surround the side surface of the main body portion 21 of the electrostatic chuck 2 and cover the edge portion 22.
  • the sides of the main body 21, the front, back and sides of the edge 22 are all covered by the side mask 4, so that the entire side of the electrostatic chuck 2 can be effectively blocked, and even the back of the edge 22 can be blocked, thereby Effectively protect the electrostatic chuck 2.
  • the side mask 4 includes a first split body 41, a second split body 42, a third split body 43 and a fastener 9, wherein the first split body 41 is arranged on the electrostatic card
  • the split body 43 is used to shield the side surface of the edge portion 22; and the third split body 43 is in electrical contact with the first split body 41 and the second split body 42 so that they can maintain the same potential.
  • the third split body 43 is integrally formed with the first split body 41 and electrically contacted with the second split body 42.
  • the embodiment of the present invention is not limited to this.
  • the third split body The body 43 may also be integrally formed with the second split body 42 and be in electrical contact with the first split body 41; or, there may be two third split bodies 43, which are connected to the first split body 41 and the second split body 42 respectively. It is integrally formed and the two third split bodies 43 are in electrical contact, which can also keep the first split body 41 and the second split body 42 at the same potential.
  • the third split body 43 and the first split body 41 or the second split body 42 may also be connected in other ways than integrally formed that can be electrically conducted, such as welding.
  • the fastener 9 is used to fix the first split body 41 and the second split body 42 with the edge portion 22 of the electrostatic chuck, so that the first split body 41 and the second split body 42 can clamp and fix the edge portion 22 In between.
  • the fastener 9 is, for example, a connecting screw, which successively penetrates the first split body 41, the second split body 42 and the edge portion 22 of the electrostatic chuck, and is threadedly connected with the mounting plate 1, so as to realize the first split body 41.
  • the second split body 42 and the edge portion 22 of the electrostatic chuck are fixed on the mounting board 1.
  • a buffer 8 is provided between the first split body 41 and the edge portion 22 of the electrostatic chuck, and/or between the second split body 42 and the edge portion 22 of the electrostatic chuck, for Avoid crushing the ceramic layer of the electrostatic chuck.
  • the buffer member 8 includes an elastic member capable of buffering, such as a sealing ring or a buffer gasket.
  • the main mask 3 is often deformed due to thermal expansion. In this case, it passes between the side of the main mask 3 and the inner side of the second split 42 of the side mask 4 A proper gap is reserved between them to allow the main mask 3 to be deformed to a certain degree, so as to prevent the main mask 3 from being damaged.
  • a proper radial gap can be reserved between the sides to allow the ceramic layer of the electrostatic chuck 2 to deform to a certain degree, so as to avoid damage to the ceramic layer.
  • the mask structure further includes a ring-shaped shielding plate 5, which is arranged on the side mask plate 4 and is specifically stacked on the front surface of the second split body 42 421, and the annular shielding plate 5 is located on the front side of the main mask plate 3, and the inner edge of the annular shielding plate 5 extends to the inner edge of the main mask plate 3.
  • the inner edge of the annular shielding plate 5 is located inside the edge of the main mask 3, and the radial distance between the two is D.
  • the above-mentioned diameter formed between the side surface of the main mask 3 and the inner surface of the second split body 42 of the side mask 4 can be blocked. To prevent plasma from entering the gap.
  • annular recess 422 is further provided on the inner surface of the second split body 42 of the side mask 4, and the annular recess 422 penetrates to the front surface 421 of the second split body 42.
  • the edge portion of the main mask 3 is located in the annular recess 422. In this way, the radial gap between the inner side surface of the second split body 42 and the side surface of the main mask 3 can form a labyrinth channel, which can further prevent the plasma from entering.
  • the mask structure also includes a conductive structure for electrically conducting the main mask 3 and the side mask 4.
  • the main mask 3 and the side mask 4 can be kept at the same potential as a whole, so that during the FCVA process, the main mask 3 and the side mask 4 can be grounded to guide the deposition ions toward The ground potential can then deposit ions on the bearing surface of the electrostatic chuck 2.
  • the above-mentioned conductive structure includes a conductive elastic member that is electrically connected to the main mask 3 and the side mask 4 respectively.
  • the conductive elastic member is a conductive spring 10, one end of which is electrically connected to the main mask 3, and the other end is fixed on the fastener 9 and electrically connected to the annular shield plate 5, while the annular shield The plate 5 is electrically connected to the side mask 4, so that the main mask 3, the annular shielding plate 5, and the side mask 4 maintain the same potential.
  • the conductive reed 10 is, for example, a beryllium copper reed or the like.
  • the conductive elastic member has elasticity, it deforms in the main mask 3 due to thermal expansion At this time, its own elasticity can still be used to maintain electrical contact with the main mask 3, thereby improving the stability of the connection.
  • the mask structure further includes a floating lock assembly 11, which is used to apply a bearing surface facing the electrostatic chuck 2 to the main mask 3 (That is, the one-way elastic force of the front surface of the main body portion 21) fixes the main mask 3 on the bearing surface.
  • the so-called "unidirectional elastic force” refers to applying force only in a single direction, so that the force receiving party is only constrained in one direction, and the other directions are not constrained by the force.
  • the main mask 3 Since the main mask 3 is only subjected to pressure perpendicular to its front surface, the main mask 3 is restricted only in the X direction, which allows the main mask 3 to undergo thermal expansion and deformation in the other directions without being subjected to Damaged by multi-directional constraints.
  • the pressure exerted by the floating lock assembly 11 is elastic, that is, the floating lock assembly 11 itself has a certain degree of elasticity, which can allow the main mask 3 to also produce a certain amount of thermal expansion and deformation in the X direction, thereby Improve connection stability.
  • the above-mentioned floating locking assembly 11 includes a first connecting member 111, a second connecting member 112 and an elastic member 113, wherein a first through hole penetrating in the thickness direction is provided in the main mask 3 , And correspondingly, a second through hole is provided in the main part 21 of the electrostatic chuck 2 along its thickness reversely;
  • the first connecting member 111 is, for example, a lock nut 1111, and the lock nut 1111 penetrates the first
  • a first flange 1112 is provided in the through hole and the second through hole, and at the first end of the lock nut 1111 (the left end of the lock nut 1111 in FIG. 4A), the first flange 1112 is stacked on the main screen.
  • the front surface 31 of the diaphragm 3 can thereby define the position of the lock nut 1111 in the first through hole and the second through hole.
  • the second connecting member 112 is, for example, a screw, which passes through the upper second through hole, and one end is threadedly connected to the second end of the lock nut 1111 (the right end of the lock nut 1111 in FIG. 4A), and the other end is provided with a second end.
  • Two flanges 1121 ie, the head of the screw.
  • the second flange 1121 is located on the side of the back 212 of the main body 21 of the electrostatic chuck 2 and is spaced apart from the main body 21.
  • the elastic member 113 is disposed in the space between the second flange 1121 and the main body portion 21 of the electrostatic chuck 2 to apply elastic force to the second flange 1121 to keep it away from the main body portion 21 of the electrostatic chuck 2. In this way, after the screw is tightened, a pre-tightening force will be generated between the second flange 1121 and the elastic member 113. At this time, the screw and the lock nut 1111 are directed toward the main mask 3 and the main body 21 of the electrostatic chuck 2.
  • One-way pressure in the X direction is applied, and at the same time, since the elastic member 113 has elasticity, when the main mask 3 undergoes thermal expansion and deformation in the X direction, it will be elastically deformed, thereby protecting the main mask 3 from be damaged.
  • the above-mentioned elastic member 113 is an elastic sheet.
  • the elastic sheet includes an annular sheet 1131 and a plurality of pressing claws 1132 arranged at intervals along the circumferential direction of the annular sheet 1131, wherein the annular sheet 1131 It is sleeved on the second connecting member 112 and overlaps the second flange 1121, so that when the screw is tightened, the second flange 1121 will generate a pre-tightening force between the second flange 1121 and the annular sheet 1132.
  • a plurality of pressing claws 1132 are stacked on the back surface 212 of the main body portion 21 of the electrostatic chuck 2. The pressing claw 1132 will be elastically deformed as the main mask 3 undergoes thermal expansion and deformation in the X direction.
  • the above-mentioned elastic member 113 may also adopt any other elastic structure, for example, a compression spring.
  • the tightening torque of the second connecting member 112 ranges from 0.1 N.m to 0.4 N.m. By controlling the tightening torque of the second connecting member 112 within this range, the main mask 3 can be subjected to only a slight unidirectional pressure, so that the main mask 3 can easily overcome the unidirectional pressure Thermal expansion and deformation occur in the X direction.
  • the radial gap B is used to prevent the lock nut 1111 from hindering the thermal expansion and deformation of the main mask 3 in the radial direction.
  • the value range of the radial gap is 0. mm1-0.3 mm. This range can prevent the lock nut 1111 from hindering the thermal expansion and deformation of the main mask 3 in the radial direction.
  • the first connecting member 111 and the second connecting member 112 are threadedly connected, that is, the lock nut 1111 is matched with the screw.
  • the embodiment of the present invention is not limited to this, and is used in practical applications.
  • the first connecting member 111 and the second connecting member 112 may also adopt any other detachable connection manner, such as snap connection.
  • the structures of the first connector 111 and the second connector 112 can be adaptively designed.
  • floating lock assembly 11 there may be one floating lock assembly 11.
  • floating lock assemblies 11 which are distributed at different positions of the main mask 3, so as to be able to evenly spread to the main mask 3 3 different positions apply unidirectional pressure.
  • the main mask 3 and the main body portion 21 of the electrostatic chuck 2 are respectively provided with central through holes; and the mask structure further includes a central fastening
  • the central fastener passes through the above-mentioned central through hole of the main mask 3 and the main part 21 of the electrostatic chuck 2 to fasten the main mask 3 to the main part 21 of the electrostatic chuck 2. on.
  • the above-mentioned central fastener is, for example, a bolt.
  • the stud 7 of the bolt passes through the central through hole from the back 212 of the main body portion 21 of the electrostatic chuck 2, and the nut 6 of the bolt matches the stud 7 and is connected to the main screen.
  • a pretension force is generated between the front surfaces of the diaphragm 3.
  • conductive elastic members such as wires can be selected to realize electrical conduction between the main mask 3 and the side mask 4. Specifically, one end of the wire is fixedly connected to the side mask 4 and electrically conducted; the other end of the wire is fixedly connected to a central fastener (such as a stud or nut of a bolt) and is electrically conducted.
  • a central fastener such as a stud or nut of a bolt
  • a plurality of process holes 12 corresponding to each bump are provided in the main mask 3, and optionally, the diameter E of the process hole 12 ranges from In 1mm-5mm.
  • the center distance between two adjacent process holes 12 ranges from 5 mm to 15 mm.
  • parameters such as the size, shape, and arrangement of the process holes 12 can be freely set according to the design of the bumps.
  • the structure and parameters of the process hole 12 are designed by taking as an example the formation of a plurality of bumps distributed at intervals on the bearing surface of the electrostatic chuck 2.
  • a rib structure 13 is also provided for improving the main mask. 3.
  • Strength and flatness can make the back surface of the main mask 3 and the front surface 211 of the main part 21 of the electrostatic chuck 2 more closely fit, thereby improving the quality of the mask process.
  • the above flatness can be controlled within 0.05.
  • the aforementioned rib structure 13 includes an annular rib 131 with the center of the main mask 3 as the center or multiple annular ribs 131 with different radii; and, when the annular rib 131 is When there are more than one, a plurality of radial connecting ribs 132 distributed along the circumferential direction are provided between two adjacent annular reinforcing ribs 131. In this way, the strength of the entire main mask 3 can be comprehensively improved, and at the same time it is more beneficial to improve the flatness.
  • the thickness H2 of the aforementioned rib structure 13 is greater than or equal to 1 mm, so as to effectively improve the strength and flatness of the main mask 3.
  • the sum of the thickness of the rib structure 13 and the main mask 3 (H2+H1) is less than or equal to 5mm; and the thickness of the main mask 3 is less than or equal to 1.5mm; the rib structure 13 and any adjacent one
  • the distance L between the edges of the process hole 12 is greater than or equal to 2 mm.
  • the thickness of the main mask 3 should not be too thick to avoid hindering the passage of plasma.
  • the thickness of the rib structure 13 should not be too thick, and the aforementioned spacing L should not be too small.
  • a process hollow 14 is further provided in the central area of the main mask 3 for forming a conductive film for testing on the carrying surface of the electrostatic chuck 2.
  • the shape of the process hollow part 14 should be adapted to the shape of the electrostatic chuck 2 itself to realize the test function.
  • the process hollow part 14 includes an arc-shaped hollow part 141 and at least three strip-shaped hollow parts 142, wherein,
  • the shape of the arc-shaped hollow portion 141 may be a non-closed ring, the center of which coincides with the center of the main mask 3; at least three strip-shaped hollow portions 142 are symmetrically distributed with the center of the arc-shaped hollow portion 141 , And one end of each strip-shaped hollow portion 142 is connected to the arc-shaped hollow portion 141, and the other end extends along the radial direction of the arc-shaped hollow portion 141.
  • the thermal expansion coefficient of the conductive metal used in the main mask 3 and the side mask 4 ranges from 3 ⁇ 10-6/°C to 10 ⁇ 10-6/°C.
  • the thermal expansion coefficient of the conductive metal in this range is low, and it is easy to match the thermal expansion coefficient of the material used in the electrostatic chuck 2 (usually alumina ceramic), that is, find the thermal expansion coefficient that is the same as that of the electrostatic chuck 2.
  • the type of conductive metal greatly improves the problem of inaccurate patterned coating caused by thermal expansion of the mask during the process of coating.
  • the above-mentioned conductive metal includes an iron-cobalt-nickel alloy or a conductive metal whose thermal expansion coefficient meets the above-mentioned requirements.
  • the available Chinese brands of iron-cobalt-nickel alloys are: 4J5, 4j6, 4j9, 4j18, 4j20, 4j28, 4j29, 4j30, 4j31, 4j32, 4j33, 4j34, 4j35, 4j36, 4j38, 4j40, 4j42, 4j44, 4j45 , 4j46, 4j47, 4j48, 4j49, 4j50, 4j52, 4j54, 4j58, 4j78, 4j80, etc.
  • the mask structure includes a main mask plate and a side mask plate both made of conductive metal.
  • the deposited ions in the carbon plasma can be guided to move toward the electrostatic chuck, and at the same time, the deposited ions passing through the main mask form a pattern of corresponding bumps on the carrying surface of the electrostatic chuck ⁇ The film layer.
  • the side surface of the electrostatic chuck with the help of the side mask, it is possible to prevent the deposited ions from forming a film on the side surface, thereby protecting the electrostatic chuck.
  • the mask structure provided by the embodiment of the present invention can be applied to FCVA equipment due to its electrical conductivity and anti-side plating characteristics for manufacturing bumps on the bearing surface of the electrostatic chuck using the FCVA process.

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Abstract

本发明实施例提供一种掩膜结构和FCVA设备，该掩膜结构用于在静电卡盘的承载面上制造凸点，且包括均采用导电金属制作的主掩膜板和侧掩膜板，其中，主掩膜板用于在静电卡盘的承载面上形成对应凸点的图形化膜层；侧掩膜板用于遮挡静电卡盘的侧面，以避免在该侧面上形成膜层。本发明实施例提供的掩膜结构和包含该掩膜结构的FCVA设备，其中掩膜结构可以导电，且可以避免在静电卡盘的承载面上制造凸点时，静电卡盘的侧面被镀膜，进而可应用于FCVA工艺。

Description

掩膜结构和FCVA设备 技术领域
本发明涉及半导体制造技术领域，特别涉及一种掩膜结构和FCVA设备。
背景技术
在半导体制造工艺过程中，需要使用静电卡盘(Electrostatic Chuck，ESC)采用静电吸附的方式固定被加工工件(例如晶圆)，以避免被加工工件在加工过程中出现移动。
一般来说，静电卡盘通常包括用于承载被加工工件的介质层，且在该介质层中内嵌有一个或多个电极。以双极型静电卡盘为例，其可以包括两个电极，二者分别与直流电源的正负两极电连接，以提供直流电压，从而利用静电引力将晶圆牢牢吸附在卡盘表面。
但是，被加工工件与静电卡盘之间的这种紧密接触可能会导致被加工工件和卡盘发生摩擦，从而引发微小颗粒的产生。随着加工时间的增加，颗粒的数量会逐渐增加，并且大量颗粒可能附着在被加工工件的背面，然后随着工艺步骤的推进被传递到不同的腔室，从而给半导体工艺带来不良影响。
为了避免上述情况的发生，一种做法是在静电卡盘的表面制作数个彼此间隔的凸点，这样可以使被加工工件的背面只与凸点接触，而不与静电卡盘的其他部分接触，从而可以减小附着在被加工工件背面的颗粒数量。上述凸点的一种制备方法是利用物理气相沉积(Physical Vapor Deposition，以下简称PVD)设备制备凸点，但是，由PVD设备制造的凸点的耐高温性能较差，很容易发生脱落，从而无法应用在高温环境中。
发明内容
本发明实施例旨在至少解决现有技术中存在的技术问题之一，提出了一种掩膜结构，该掩膜结构可以导电，且可以避免静电卡盘的侧面被镀膜，从而可以应用过滤阴极真空电弧(Filtered Cathodic Vacuum Arc，以下简称FCVA)工艺中。此外，本发明实施例还提供一种FCVA设备，其采用本发明实施例提供的上述掩膜结构，可利用FCVA工艺在静电卡盘的承载面上制造凸点。
为实现上述目的，本发明实施例提供了一种掩膜结构，用于在静电卡盘的承载面上制造凸点，所述掩膜结构包括均采用导电金属制作的主掩膜板和侧掩膜板，其中，
所述主掩膜板用于在所述静电卡盘的承载面上形成对应所述凸点的图形化膜层；
所述侧掩膜板用于完全遮挡所述静电卡盘的侧面，以避免在所述侧面上形成膜层。
作为另一个技术方案，本发明实施例还提供一种FCVA设备，包括电源、腔室以及置于所述腔室中的石墨靶、静电卡盘和掩膜结构，其中，所述电源用于通过电弧的作用使所述石墨靶产生碳等离子体；所述掩膜结构采用本发明实施例提供的上述掩膜结构，用于引导所述碳等离子体中的沉积离子朝向所述静电卡盘的承载面运动，并使经过的所述沉积离子在所述静电卡盘的承载面上形成对应所述凸点的图形化膜层。
本发明实施例的有益效果：
本发明实施例提供的掩膜结构和FCVA设备的技术方案中，掩膜结构包括均采用导电金属制作的主掩膜板和侧掩膜板，这样，在制造凸点时，可以通过接地来保持整体处于地电位，从而可以引导碳等离子体中的沉积离子朝向静电卡盘移动，同时使经过主掩膜板的沉积离子在静电卡盘的承载面上形成对应凸点的图形化膜层。此外，借助侧掩膜板遮挡静电卡盘的侧面，可以 避免沉积离子在该侧面上形成膜层，从而可以起到保护静电卡盘的作用。本发明实施例提供的掩膜结构，由于其具有导电和防侧镀的特性，可以应用于FCVA设备中，用于采用FCVA在静电卡盘的承载面上制造凸点。
附图说明
图1为本发明实施例提供的FCVA设备的结构示意图；
图2为本发明实施例提供的掩膜结构的装配后的剖视图；
图3为图2中A区域的放大图；
图4A为本发明实施例采用的浮动锁紧组件的剖视图；
图4B为本发明实施例采用的浮动锁紧组件的位于静电卡盘背面一侧的侧视图；
图5为本发明实施例采用的主掩膜板的正面一侧的侧视图；
图6为本发明实施例采用的主掩膜板的局部尺寸图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明实施例提供的掩膜结构和FCVA设备进行详细描述。
在相关技术中，通常利用PVD设备在静电卡盘的承载面上制备凸点，但是，由PVD设备制造的凸点的耐高温性能较差，很容易发生脱落，从而无法应用在高温环境中。
发明人发现：可以利用过滤阴极真空电弧(Filtered Cathodic Vacuum Arc，以下简称FCVA)设备制备凸点，该FCVA设备制备的凸点既具有较高的硬度和良好的耐磨性能，又可以应用在高温环境(250℃以上)中。但是，由于PVD设备与FCVA设备的结构和镀膜原理不同，现有的PVD设备采用的掩膜板无法应用在FCVA设备中，因此，若想利用FCVA设备在静电卡盘的承载面上制备凸点，就需要一种能够适用于FCVA设备的掩膜板。
为了解决上述问题，本发明实施例提供一种掩膜结构，该掩膜结构可以应用于FCVA设备中，用于在静电卡盘的承载面上制造凸点。
图1为本发明实施例提供的FCVA设备的结构示意图。请参阅图1，该FCVA设备利用过滤阴极真空电弧技术(FCVA)来制备凸点。具体地，FCVA设备可以包括电源101、腔室102以及置于该腔室102中的石墨靶103、静电卡盘104和掩膜结构105。其中，电源101用于通过电弧的作用使石墨靶103产生碳等离子体，电源101例如为弧(arc)电源。掩膜结构105用于引导碳等离子体中的沉积离子在静电卡盘104的承载面上形成对应凸点的膜层。所谓对应凸点的膜层，是指该膜层具有指定图形，且该指定图形与掩膜图形相同，即，构成凸点的图形。
上述FCVA设备可以根据不同的工艺要求对碳等离子体的能量进行精确控制。同时，采用上述FCVA设备工艺能够很好的控制凸点的电阻率，以能够将凸点的电阻率控制在10-4-109Ω·cm的范围内，从而可以使凸点的导电性能满足要求。
在本实施例中，在碳等离子体朝向承载面运动的过程中，利用磁场对碳等离子体进行过滤和/或聚焦。
具体地，腔室102包括沿碳等离子体的运动方向依次设置的第一部分1021、第二部分1022和第三部分1023，这三个部分是腔室102中相互连通的三个空间，其中，第二部分1022可以设置有过滤磁场，用于过滤碳等离子体中的宏观粒子、原子团等。经过这样的磁过滤处理之后，用于沉积的离子(简称沉积离子)的离化率可高达100％，并且可以过滤掉尺寸较大的颗粒。这样，在无需加热静电卡盘104的条件下，经过磁场交互作用后，FCVA沉积离子具有更高、更均匀的能量，从而在低温条件下可以形成致密、高硬度、低电阻率、具有超强附着力的膜层。
此外，在腔室102的第三部分1023中可以设置有聚焦磁场，用于将沉 积离子聚集至静电卡盘，从而在静电卡盘的承载面上沉积无氢非晶碳层，最终形成凸点。
需要说明的是，上述沉积离子是碳等离子体中未被磁过滤清除掉的离子，该离子能够在掩膜结构105的引导下朝静电卡盘的承载面运动，并沉积在该承载面上形成膜层，上述沉积离子例如为金属离子(如Ti离子)或其他能够用于制作凸点的材料所形成的离子。
上述FCVA设备可以根据不同的工艺要求对碳等离子体的能量进行精确控制。同时，采用上述FCVA设备工艺能够很好的控制凸点的电阻率，以能够将凸点的电阻率控制在10-4-109Ω·cm的范围内，从而可以使凸点的导电性能满足要求。
上述掩膜结构105是在制备静电卡盘104之前预先制备的掩膜板。由于在FCVA设备中，静电卡盘104需要侧向设置在腔室102中，例如，图1中示出的静电卡盘104，其承载面竖直设置，在这种情况下，在承载面上进行图形化镀膜的同时，需要一种能够保护静电卡盘104的侧面不被侧镀的掩膜结构。这里，静电卡盘的侧面是指静电卡盘的除承载面之外的暴露在等离子体环境中的表面。同时，在进行FCVA工艺的过程中，沉积离子会奔向地电位，这就需要采用导电金属制作掩膜板，通过接地使之能够保持整体处于地电位，以能够引导沉积离子朝静电卡盘的承载面运动，最终沉积在该承载面上。
为此，本发明实施例提供一种掩膜结构，其可以应用于FCVA设备中，用于采用FCVA工艺在静电卡盘的承载面上制造凸点。具体地，请参阅图2，静电卡盘2通过安装板1侧向悬挂固定在图1示出的FCVA设备的腔室102中，以使其承载面能够垂直于水平面。如图2所示，X方向为水平方向，Z方向和Y方向所在平面与X方向相互垂直，静电卡盘2的承载面平行于Z方向和Y方向所在平面，即，垂直于X方向。
为了便于描述，文中提及的所有部件的“正面”，均为与静电卡盘2的承载面的朝向相同的表面；文中提及的所有部件的“背面”，均为与静电卡盘2的承载面的朝向相反的表面。如图2所示，“正面”的朝向与X方向的箭头指向相反；“背面”的朝向与X方向的箭头指向相同。
掩膜结构包括均采用导电金属制作的主掩膜板3和侧掩膜板4，其中，主掩膜板3用于在静电卡盘2的承载面上形成对应凸点的图形化膜层。具体来说，主掩膜板3包括与凸点的形状和尺寸一致的镂空部分，该镂空部分未遮挡静电卡盘2的承载面，从而在沉积时，沉积离子能够通过该镂空部分沉积在静电卡盘2的承载面上的与该镂空部分对应的区域，而承载面不与该镂空部分对应的其余区域则不会有沉积离子沉积在上面，从而在承载面上形成图形化的膜层，即，构成凸点。
侧掩膜板4用于遮挡静电卡盘2的侧面，以避免在该侧面上形成镀膜，即，防止静电卡盘2的侧面被侧镀，从而起到保护静电卡盘的作用。
由于上述主掩膜板3和侧掩膜板4采用导电金属制作，在制造凸点时，可以通过使二者接地来保持整体处于地电位，从而可以引导碳等离子体中的沉积离子朝向静电卡盘移动，同时使经过主掩膜板3的沉积离子在静电卡盘的承载面上形成对应凸点的图形化膜层。
由此，本发明实施例提供的掩膜结构，由于其具有导电和防侧镀的特性，可以应用于FCVA设备中，用于采用FCVA工艺在静电卡盘2的承载面上制造凸点。
如图3和图4A所示，静电卡盘2通常包括主体部分21和自该主体部分21的侧面凸出的边缘部分22，并且边缘部分22的背面222与主体部分21的背面212相平齐，且边缘部分22的厚度小于主体部分21的厚度。在这种情况下，侧掩膜板4用于环绕设置在静电卡盘2的主体部分21的侧面，且包覆边缘部分22。这样，主体部分21的侧面、边缘部分22的正面、背面和侧 面均被侧掩膜板4覆盖，从而可以有效遮挡静电卡盘2的整个侧面，甚至边缘部分22的背面也可以被遮挡，进而有效起到保护静电卡盘2的作用。
如图3所示，为了便于安装，侧掩膜板4包括第一分体41、第二分体42、第三分体43和紧固件9，其中，第一分体41设置在静电卡盘2的边缘部分22的正面221一侧；第二分体42设置在边缘部分22的背面222一侧；第三分体43环绕设置在静电卡盘2的边缘部分22的侧面，该第三分体43用于遮挡该边缘部分22的侧面；并且，第三分体43与第一分体41和第二分体42电接触，从而可以使二者保持同电位。
在一些实施例中，第三分体43与第一分体41一体成型，并与第二分体42电接触，但是，本发明实施例并不局限于此，在实际应用中，第三分体43也可以与第二分体42一体成型，并与第一分体41电接触；或者，第三分体43还可以为两个，且分别与第一分体41和第二分体42一体成型，并且两个第三分体43电接触，这同样可以使第一分体41和第二分体42保持同电位。当然，第三分体43与第一分体41或第二分体42也可以采用除一体成型之外的其他能够电导通的连接方式，例如焊接。
紧固件9用于将第一分体41和第二分体42与静电卡盘的边缘部分22固定连接，这样，第一分体41和第二分体42能够将边缘部分22夹持固定在二者之间。紧固件9例如为连接螺钉，该连接螺钉依次贯通第一分体41、第二分体42和静电卡盘的边缘部分22，并与安装板1螺纹连接，从而在实现将第一分体41、第二分体42和静电卡盘的边缘部分22固定在安装板1上。
在一些实施例中，在第一分体41与静电卡盘的边缘部分22之间，和/或在第二分体42与静电卡盘的边缘部分22之间设置有缓冲件8，用于避免静电卡盘的陶瓷层被挤碎。可选的，缓冲件8包括诸如密封圈或者缓冲垫片等的能够起缓冲作用的弹性件。
在一些实施例中，主掩膜板3的侧面与侧掩膜板4的第二分体42的内 侧面之间具有径向间隙。在进行工艺时，主掩膜板3往往会因受热膨胀而产生变形，在这种情况下，通过在主掩膜板3的侧面与侧掩膜板4的第二分体42的内侧面之间预留出适当的间隙，可以允许主掩膜板3产生一定程度的变形，从而可以避免主掩膜板3损坏。类似的，侧掩膜板4的第二分体42的内侧面与静电卡盘2的主体部分21的侧面之间，及第三分体43的内侧面与静电卡盘2的边缘部分22的侧面之间均可以预留适当大小的径向间隙，以允许静电卡盘2的陶瓷层产生一定程度的变形，从而可以避免该陶瓷层损坏。
在一些实施例中，如图2和图3所示，掩膜结构还包括环形遮挡板5，该环形遮挡板5设置在侧掩膜板4上，具体叠置在第二分体42的正面421，并且环形遮挡板5位于主掩膜板3的正面一侧，且环形遮挡板5的内侧边缘延伸至主掩膜板3的边缘内侧。如图3所示，环形遮挡板5的内侧边缘位于主掩膜板3的边缘的内侧，且二者之间的径向间距为D。通过使环形遮挡板5的内侧边缘延伸至主掩膜板3的边缘内侧，可以遮挡主掩膜板3的侧面与侧掩膜板4的第二分体42的内侧面之间构成的上述径向间隙，从而可以避免等离子体进入该间隙。
在一些实施例中，如图3所示，在侧掩膜板4的第二分体42的内侧面上还设置有环形凹部422，该环形凹部422贯通至该第二分体42的正面421，主掩膜板3的边缘部分位于该环形凹部422中。这样，可以使第二分体42的内侧面与主掩膜板3的侧面之间的径向间隙构成迷宫式通道，从而可以进一步防止等离子体的进入。
优选的，掩膜结构还包括导电结构，该导电结构用于将主掩膜板3和侧掩膜板4电导通。这样，可以使主掩膜板3和侧掩膜板4整体保持同电位，从而可以在进行FCVA工艺的过程中，通过使主掩膜板3和侧掩膜板4接地来引导沉积离子奔向地电位，进而可以使沉积离子沉积在静电卡盘2的承载面上。
在一些实施例中，上述导电结构包括导电弹性件，该导电弹性件分别与主掩膜板3和侧掩膜板4电连接。例如，如图3所示，导电弹性件为导电簧片10，其一端与主掩膜板3电导通，另一端固定在紧固件9上，且与环形遮挡板5电导通，而环形遮挡板5与侧掩膜板4电导通，从而实现主掩膜板3、环形遮挡板5和侧掩膜板4保持同电位。上述导电簧片10例如为铍铜簧片等。
在借助上述导电弹性件来实现主掩膜板3、环形遮挡板5和侧掩膜板4保持同电位的同时，由于导电弹性件具有弹性，其在主掩膜板3因受热膨胀而产生变形时，仍然可以利用自身弹性来与主掩膜板3保持电接触，从而可以提高连接的稳定性。
在一些实施例中，如图4A和图4B所示，掩膜结构还包括浮动锁紧组件11，该浮动锁紧组件11用于通过向主掩膜板3施加朝向静电卡盘2的承载面(即，主体部分21的正面)的单向弹力，来将主掩膜板3固定在该承载面上。所谓“单向弹力”，是指仅朝向单一方向施力，从而使受力方仅受到单向约束，而其余方向均未受到该力的约束。
由于主掩膜板3仅受到垂直于其正面的压力，这使得该主掩膜板3只受到X方向的约束，从而可以允许主掩膜板3在其余方向产生热膨胀变形，而不会因受到多方向约束而损坏。同时，由于浮动锁紧组件11施加的压力为弹力，即，浮动锁紧组件11本身具有一定的弹性，这可以允许主掩膜板3在X方向上也能够产生一定大小的热膨胀变形，从而可以提高连接的稳定性。
在一些实施例中，上述浮动锁紧组件11包括第一连接件111、第二连接件112和弹性件113，其中，在主掩膜板3中设置有沿其厚度方向贯穿的第一通孔，且对应地在静电卡盘2的主体部分21中设置有沿其厚度反向贯穿的第二通孔；第一连接件111例如为锁紧螺母1111，锁紧螺母1111穿设在上述第一通孔和第二通孔中，且在该锁紧螺母1111的第一端(图4A中锁紧螺母1111的左端)设置有第一凸缘1112，该第一凸缘1112叠置在主掩膜板3的 正面31，从而可以限定锁紧螺母1111在第一通孔和第二通孔中的位置。
第二连接件112例如为螺钉，其穿设于上第二通孔中，且一端与锁紧螺母1111的第二端(图4A中锁紧螺母1111的右端)螺纹连接，另一端设置有第二凸缘1121(即，螺钉的头部)，该第二凸缘1121位于静电卡盘2的主体部分21的背面212一侧，且与该主体部分21间隔设置。
弹性件113设置在第二凸缘1121与静电卡盘2的主体部分21之间的间隔中，用以向第二凸缘1121施加使之远离静电卡盘2的主体部分21的弹力。这样，在螺钉旋紧后，其第二凸缘1121会与弹性件113之间产生预紧力，此时螺钉与锁紧螺母1111共同向主掩膜板3和静电卡盘2的主体部分21施加X方向上的单向压力，同时，由于弹性件113具有弹性，其在主掩膜板3在X方向上产生热膨胀变形时，会随之产生弹性变形，从而可以保护主掩膜板3不被损坏。
在一些实施例中，上述弹性件113为弹性片，如图4B所示，该弹性片包括环形片1131和沿该环形片1131的周向间隔设置的多个压爪1132，其中，环形片1131套设在第二连接件112上，且与第二凸缘1121相互叠置，这样，在螺钉旋紧时，第二凸缘1121会与该环形片1132之间产生预紧力。多个压爪1132叠置在静电卡盘2的主体部分21的背面212。该压爪1132会随主掩膜板3在X方向上产生热膨胀变形而产生弹性变形。
当然，在实际应用中，上述弹性件113还可以采用其他任意具有弹性的结构，例如，压缩弹簧。
在一些实施例中，可选的，第二连接件112的旋紧力矩的取值范围在0.1N.m-0.4N.m。通过将第二连接件112的旋紧力矩的大小控制在该范围内，可以使主掩膜板3仅受到较轻微的单向压力，从而可以使主掩膜板3很容易克服该单向压力在X方向上产生热膨胀变形。
如图4A所示，锁紧螺母1111与主掩膜板3中的上述第一通孔之间具有 径向间隙B。该径向间隙B用于避免锁紧螺母1111妨碍主掩膜板3在径向上产生的热膨胀变形。可选的，该径向间隙的取值范围在0.mm1-0.3mm。该范围能够避免锁紧螺母1111妨碍主掩膜板3在径向上产生的热膨胀变形。
需要说明的是，在上述实施例中，第一连接件111与第二连接件112螺纹连接，即，锁紧螺母1111与螺钉配合，但是，本发明实施例并不局限于此，在实际应用中，第一连接件111与第二连接件112还可以采用其他任意可拆卸连接的方式，例如卡接。并且，根据不同的可拆卸连接方式，可以适应性地设计第一连接件111与第二连接件112的结构。
在实际应用中，上述浮动锁紧组件11可以为一个，优选的，上述浮动锁紧组件11为多个，且分布在主掩膜板3的不同位置处，以能够均匀地向主掩膜板3的不同位置施加单向压力。
在一些实施例中，可选的，如图2所示，对应地分别在主掩膜板3与静电卡盘2的主体部分21设置有中心通孔；并且，掩膜结构还包括中心紧固件，该中心紧固件穿设于主掩膜板3和静电卡盘2的主体部分21的上述中心通孔中，用以将主掩膜板3紧固在静电卡盘2的主体部分21上。
上述中心紧固件例如为螺栓，具体地，螺栓的螺柱7自静电卡盘2的主体部分21的背面212穿过中心通孔，螺栓的螺母6与螺柱7相配合，且与主掩膜板3的正面之间产生预紧力。
借助上述中心紧固件，可以在上述浮动锁紧组件11的浮动式固定的基础上，在主掩膜板3的中心位置处对其施加刚性固定，由于该固定点位于在主掩膜板3的中心位置处，其对主掩膜板3和静电卡盘2的热膨胀变形的妨碍可以忽略不计，从而可以进一步提高主掩膜板3与静电卡盘2之间的连接稳定性。
另外，在设置中心紧固件的基础上，可以选择采用导线等的导电弹性件来实现主掩膜板3与侧掩膜板4之间的电导通。具体地，导线的一端与侧掩 膜板4固定连接，且电导通；导线的另一端与中心紧固件(例如螺栓的螺柱或者螺母)固定连接，且电导通。
在一些实施例中，如图5所示，在主掩膜板3中设置有多个与各个凸点一一对应的工艺孔12，可选的，该工艺孔12的直径E的取值范围在1mm-5mm。相邻的两个工艺孔12之间的中心距的取值范围在5mm-15mm。
当然，在实际应用中，工艺孔12的尺寸、形状和排布方式等参数可以根据凸点的设计来自由设定。在本实施例中，是以在静电卡盘2的承载面上形成间隔分布的多个凸点为例，对工艺孔12的结构和参数进行了设计。
在一些实施例中，在主掩膜板3的正面31，且位于除工艺孔12所在区域之外的区域(即，非镂空区域)还设置有加强筋结构13，用于提高主掩膜板3的强度和平面度。其中，平面度的提高可以使主掩膜板3的背面与静电卡盘2的主体部分21的正面211更贴合，从而可以提高掩膜工艺品质。可选的，上述平面度可以控制在0.05以内。
具体地，如图5所示，上述加强筋结构13包括以主掩膜板3的中心为圆心的一个环形加强筋131或者半径不同的多个环形加强筋131；并且，当环形加强筋131为多个时，在相邻的两个环形加强筋131之间设置有沿其周向分布的多个径向连接筋132。这样，可以全面提高整个主掩膜板3的强度，同时更有利于提高平面度。
如图6所示，可选的，上述加强筋结构13的厚度H2大于或等于1mm，以有效提高主掩膜板3的强度和平面度。加强筋结构13与主掩膜板3的厚度之和(H2+H1)小于或等于5mm；而主掩膜板3的厚度小于或等于1.5mm；加强筋结构13和与之相邻的任意一个工艺孔12的边沿之间的间距L大于或等于2mm。这里，主掩膜板3的厚度不宜过厚，以避免妨碍等离子体通过。基于同一目的，加强筋结构13的厚度也不宜过厚，并且上述间距L也不宜过小。
在一些实施例中，如图5所示，在主掩膜板3的中心区域还设置有工艺镂空部14，用于在静电卡盘2的承载面上形成测试用导电薄膜。该工艺镂空部14的形状应与静电卡盘2自身的形状相适配，以实现测试功能，例如，工艺镂空部14包括圆弧形镂空部141和至少三个条形镂空部142，其中，圆弧形镂空部141的形状可以为非闭合的圆环，该圆环的圆心与主掩膜板3的中心重合；至少三个条形镂空部142以圆弧形镂空部141的圆心对称分布，且每个条形镂空部142的一端与圆弧形镂空部141连接，另一端沿圆弧形镂空部141的径向延伸。
可选的，上述主掩膜板3和侧掩膜板4所采用的导电金属的热膨胀系数的取值范围在3×10-6/℃-10×10-6/℃。该范围内的导电金属的热膨胀系数较低，很容易与静电卡盘2所采用的材料(通常为氧化铝陶瓷)的热膨胀系数匹配，即，找到热膨胀系数与静电卡盘2的热膨胀系数相同的导电金属的类型，从而极大地改善了工艺镀膜过程中因掩膜板热膨胀而引起的图形化镀膜不精确的问题。
可选的，上述导电金属包括铁钴镍合金或者钛等的热膨胀系数满足上述要求的导电金属。其中，铁钴镍合金可以选用的中国牌号为：4J5、4j6、4j9、4j18、4j20、4j28、4j29、4j30、4j31、4j32、4j33、4j34、4j35、4j36、4j38、4j40、4j42、4j44、4j45、4j46、4j47、4j48、4j49、4j50、4j52、4j54、4j58、4j78、4j80等等。
综上所述，本发明实施例提供的掩膜结构和FCVA设备的技术方案中，掩膜结构包括均采用导电金属制作的主掩膜板和侧掩膜板，这样，在制造凸点时，可以通过接地来保持整体处于地电位，从而可以引导碳等离子体中的沉积离子朝向静电卡盘移动，同时使经过主掩膜板的沉积离子在静电卡盘的承载面上形成对应凸点的图形化膜层。此外，借助侧掩膜板遮挡静电卡盘的侧面，可以避免沉积离子在该侧面上形成膜层，从而可以起到保护静电卡盘 的作用。本发明实施例提供的掩膜结构，由于其具有导电和防侧镀的特性，可以应用于FCVA设备中，用于采用FCVA工艺在静电卡盘的承载面上制造凸点。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (28)

  1. 一种掩膜结构，用于在静电卡盘的承载面上制造凸点，其特征在于，所述掩膜结构包括均采用导电金属制作的主掩膜板和侧掩膜板，其中，
    所述主掩膜板用于在所述静电卡盘的承载面上形成对应所述凸点的图形化膜层；
    所述侧掩膜板用于遮挡所述静电卡盘的侧面，以避免在所述侧面上形成膜层。
  2. 根据权利要求1所述的掩膜结构，其特征在于，所述侧掩膜板用于环绕设置在所述静电卡盘的主体部分的侧面，且包覆所述静电卡盘自所述主体部分的侧面凸出的边缘部分。
  3. 根据权利要求2所述的掩膜结构，其特征在于，所述侧掩膜板包括第一分体、第二分体、第三分体和紧固件，其中，
    所述第一分体设置在所述静电卡盘的边缘部分的正面一侧；所述第二分体设置在所述静电卡盘的边缘部分的背面一侧；所述第三分体环绕设置在所述静电卡盘的边缘部分的侧面，且与所述第一分体和第二分体电接触；
    所述紧固件用于将所述第一分体和所述第二分体与所述静电卡盘的边缘部分固定连接。
  4. 根据权利要求3所述的掩膜结构，其特征在于，在所述第一分体与所述静电卡盘的边缘部分之间，和/或在所述第二分体与所述静电卡盘的边缘部分之间设置有缓冲件。
  5. 根据权利要求1-4任意一项所述的掩膜结构，其特征在于，所述掩膜结构还包括环形遮挡板，所述环形遮挡板设置在所述侧掩膜板上，且位于 所述主掩膜板的正面一侧，并且所述环形遮挡板的内侧边缘延伸至所述主掩膜板的边缘内侧。
  6. 根据权利要求1-4任意一项所述的掩膜结构，其特征在于，在所述侧掩膜板的内侧面上设置有贯通至所述侧掩膜板的正面的环形凹部，所述主掩膜板的边缘部分位于所述环形凹部中。
  7. 根据权利要求1所述的掩膜结构，其特征在于，所述掩膜结构还包括导电弹性件，所述导电弹性件分别与所述主掩膜板和侧掩膜板电连接。
  8. 根据权利要求1所述的掩膜结构，其特征在于，所述掩膜结构还包括浮动锁紧组件，所述浮动锁紧组件用于通过向所述主掩膜板施加朝向所述静电卡盘的承载面的单向弹力，来将所述主掩膜板固定在所述承载面上。
  9. 根据权利要求8所述的掩膜结构，其特征在于，所述浮动锁紧组件包括第一连接件、第二连接件和弹性件，其中，
    在所述主掩膜板中设置有沿其厚度方向贯穿的第一通孔，且对应地在所述静电卡盘的主体部分中设置有沿其厚度反向贯穿的第二通孔，所述第一连接件穿设于所述第一通孔和第二通孔中，且在所述第一连接件的一端设置有第一凸缘，所述第一凸缘叠置在所述主掩膜板的正面；
    所述第二连接件穿设于所述第二通孔中，且所述第二连接件的一端与所述第一连接件可拆卸连接，所述第二连接件的另一端设置有第二凸缘，所述第二凸缘位于所述静电卡盘的主体部分的背面一侧，且与所述主体部分间隔设置；
    所述弹性件设置在所述第二凸缘与所述静电卡盘的主体部分之间的间隔中，用以向所述第二凸缘施加使之远离所述静电卡盘的主体部分的弹力。
  10. 根据权利要求9所述的掩膜结构，其特征在于，所述弹性件包括弹性片或者压缩弹簧。
  11. 根据权利要求10所述的掩膜结构，其特征在于，所述弹性片包括环形片和沿所述环形片的周向间隔设置的多个压爪，其中，
    所述环形片套设在所述第二连接件上，且与所述第二凸缘相互叠置；
    多个所述压爪叠置在所述静电卡盘的主体部分的背面。
  12. 根据权利要求9所述的掩膜结构，其特征在于，所述第二连接件与所述第一连接件螺纹连接，且所述第二连接件的旋紧力矩的取值范围在0.1N.m-0.4N.m。
  13. 根据权利要求9所述的掩膜结构，其特征在于，所述第一连接件与所述第一通孔之间具有径向间隙。
  14. 根据权利要求13所述的掩膜结构，其特征在于，所述径向间隙的取值范围在0.1mm-0.3mm。
  15. 根据权利要求8所述的掩膜结构，其特征在于，所述浮动锁紧组件为一个或者多个，且多个所述浮动锁紧组件分布在所述主掩膜板的不同位置处。
  16. 根据权利要求8所述的掩膜结构，其特征在于，对应地分别在所述主掩膜板与所述静电卡盘的主体部分设置有中心通孔；
    所述掩膜结构还包括中心紧固件，所述中心紧固件穿设于所述主掩膜板和所述静电卡盘的主体部分的中心通孔中，用以将所述主掩膜板紧固在所述静电卡盘的主体部分上。
  17. 根据权利要求1所述的掩膜结构，其特征在于，在所述主掩膜板中设置有多个与各个所述凸点一一对应的工艺孔，并且在所述主掩膜板的正面，且位于除所述工艺孔所在区域之外的区域还设置有加强筋结构，用于提高所述主掩膜板的强度和平面度。
  18. 根据权利要求17所述的掩膜结构，其特征在于，所述加强筋结构包括以所述主掩膜板的中心为圆心的一个环形加强筋或者半径不同的多个环形加强筋；并且，所述环形加强筋为多个时，在相邻的两个所述环形加强筋之间设置有沿其周向分布的多个径向连接筋。
  19. 根据权利要求17所述的掩膜结构，其特征在于，所述工艺孔的直径的取值范围在1mm-5mm。
  20. 根据权利要求17所述的掩膜结构，其特征在于，相邻的两个所述工艺孔之间的中心距的取值范围在5mm-15mm。
  21. 根据权利要求17所述的掩膜结构，其特征在于，所述加强筋结构的厚度大于或等于1mm；所述加强筋结构与所述主掩膜板的厚度之和小于或等于5mm；所述主掩膜板的厚度小于或等于1.5mm；所述加强筋结构和与之相邻的任意一个所述工艺孔的边沿之间的间距大于或等于2mm。
  22. 根据权利要求1所述的掩膜结构，其特征在于，在所述主掩膜板的中心区域还设置有工艺镂空部，用于在所述静电卡盘的承载面上形成测试用导电薄膜。
  23. 根据权利要求22所述的掩膜结构，其特征在于，所述工艺镂空部 包括圆弧形镂空部和至少三个条形镂空部，其中，
    所述圆弧形镂空部的圆心与所述主掩膜板的中心重合；
    至少三个所述条形镂空部以所述圆弧形镂空部的圆心对称分布，且每个所述条形镂空部的一端与所述圆弧形镂空部连接，另一端沿所述圆弧形镂空部的径向延伸。
  24. 根据权利要求1所述的掩膜结构，其特征在于，所述导电金属的热膨胀系数的取值范围在3×10-6/℃-10×10-6/℃。
  25. 根据权利要求24所述的掩膜结构，其特征在于，所述导电金属的热膨胀系数与所述静电卡盘的热膨胀系数相同。
  26. 根据权利要求24或25所述的掩膜结构，其特征在于，所述导电金属包括铁钴镍合金或者钛。
  27. 根据权利要求1所述的掩膜结构，其特征在于，所述凸点为多个，且多个所述凸点在所述承载面上间隔分布。
  28. 一种FCVA设备，其特征在于，包括电源、腔室以及置于所述腔室中的石墨靶、静电卡盘和掩膜结构，其中，所述电源用于通过电弧的作用使所述石墨靶产生碳等离子体；所述掩膜结构采用权利要求1-27任意一项所述的掩膜结构，用于引导所述碳等离子体中的沉积离子朝向所述静电卡盘的承载面运动，并使经过的所述沉积离子在所述静电卡盘的承载面上形成对应所述凸点的图形化膜层。
PCT/CN2020/099265 2019-07-05 2020-06-30 掩膜结构和fcva设备 Ceased WO2021004331A1 (zh)

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