WO2021000405A1 - 一种玻璃基板上的黑色矩阵的制备方法及其应用 - Google Patents

一种玻璃基板上的黑色矩阵的制备方法及其应用 Download PDF

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Publication number
WO2021000405A1
WO2021000405A1 PCT/CN2019/102846 CN2019102846W WO2021000405A1 WO 2021000405 A1 WO2021000405 A1 WO 2021000405A1 CN 2019102846 W CN2019102846 W CN 2019102846W WO 2021000405 A1 WO2021000405 A1 WO 2021000405A1
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Prior art keywords
photoresist
black matrix
glass substrate
groove
preparation
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PCT/CN2019/102846
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English (en)
French (fr)
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刘雪
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深圳市华星光电技术有限公司
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Priority to US16/609,767 priority Critical patent/US20210003883A1/en
Publication of WO2021000405A1 publication Critical patent/WO2021000405A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Definitions

  • the invention relates to the technical field of display panels, in particular to a method for preparing a black matrix on a glass substrate and its application.
  • the CF (Color Filter) color filter in the TFT-LCD panel is composed of many pixels arranged in a matrix, and each pixel is composed of three sub-pixels of red (R), green (G), and blue (B) ,
  • the black matrix Black Matrix
  • PPI high-resolution
  • 8K and 16K have emerged one after another. This requires an increase in the number of pixels and a reduction in size.
  • the line width of the black matrix used to separate the color filters is also required Designed to be smaller.
  • the prepared black matrix with fine line width also needs to have a higher taper angle (Taper Angle), the reason is to avoid the problem of reduced aperture ratio caused by low cone angle.
  • the black matrix in the prior art is mainly obtained according to the photolithography process.
  • a negative photoresist is used to coat and form a film, and then the exposure process is performed through a photomask.
  • the exposed part is cured and does not react with the developer.
  • the development process it is Keep, and finally go through the post-baking process to get the final pattern.
  • the generally prepared black matrix has problems such as large line width and low taper angle.
  • An object of the present invention is to provide a method for preparing a black matrix on a glass substrate, which can solve the problems of large line width and low taper angle of the black matrix in the prior art.
  • the present invention provides a method for preparing a black matrix on a glass substrate, including the following steps:
  • Step S1 providing a glass substrate, and coating photoresist on the glass substrate to form a photoresist layer;
  • Step S2 forming a photoresist groove on the photoresist layer
  • Step S3 Filling the black matrix photoresist into the photoresist groove
  • Step S4 Expose the black matrix photoresist to obtain a black matrix.
  • the photoresist in the step 1 is a positive photoresist
  • the photoresist groove in the step S2 is formed by a photolithography process
  • the photoresist in the step 1 is a positive photoresist
  • the photoresist groove in the step S2 is formed by laser cutting.
  • the photoresist in the step 1 is a negative photoresist
  • the photoresist groove in the step S2 is formed by a photolithography process.
  • the photoresist in the step 1 is a negative photoresist
  • the photoresist groove in the step S2 is formed by laser cutting.
  • the cross-sectional shape of the photoresist groove is a rectangular shape.
  • the width of the photoresist groove is less than 10 microns.
  • the black matrix photoresist in the step S3 is filled into the photoresist groove by inkjet printing.
  • the present invention also provides a glass substrate on which a black matrix is arranged; wherein the black matrix is prepared and formed according to the preparation method of the present invention.
  • the taper angle of the black matrix is 90 degrees.
  • the line width of the black matrix is less than 10 microns.
  • the beneficial effect of the present invention is to provide a method for preparing a black matrix on a glass substrate and its application, which can make the formed black matrix thinner and higher taper angle to meet the requirements for high resolution. , It helps to increase the opening rate of the product; on the other hand, due to the reduction of the development process, the method is simple to operate, has no process difficulties, and is easy to implement, and reduces the problem of low cone angle or undercut and peeling caused by the development process.
  • FIG. 1 is a flowchart of a method for preparing a black matrix according to Embodiment 1 of the present invention
  • Embodiment 2 is a flowchart of a method for preparing a black matrix provided by Embodiment 2 of the present invention
  • Embodiment 3 is a flowchart of a method for preparing a black matrix provided by Embodiment 3 of the present invention.
  • FIG. 4 is a flowchart of a method for preparing a black matrix according to Embodiment 4 of the present invention.
  • FIG. 1 shows a flowchart of the method for preparing a black matrix provided in this embodiment, which includes the following steps:
  • Step S1 Provide a glass substrate 1 and apply a positive photoresist on the glass substrate 1 to form a photoresist layer 2.
  • a negative photoresist is used for coating when making a black matrix.
  • the prepared black matrix usually has a large line width and a cone angle. Lower question.
  • a positive photoresist is used when making a black matrix. Because the positive photoresist has a high resolution, the prepared black matrix can achieve the purpose of thin line width.
  • Step S2 photolithographic exposure is performed on the positive photoresist, and the positive photoresist under the exposed area is displayed, and the photoresist groove 3 is obtained;
  • the cross-sectional shape of the photoresist groove 3 is a rectangular shape.
  • the photoresist groove is prepared so that the line width of the black matrix photoresist is guaranteed, the purpose of thin line width can be achieved, and a higher taper angle can be obtained.
  • Step S3 Use the nozzle of the inkjet printer 4 to drop the black matrix photoresist 5 into the photoresist groove by means of inkjet printing;
  • Step S4 Expose the black matrix photoresist 5 to obtain the black matrix 6.
  • This embodiment also provides a glass substrate on which a black matrix is arranged.
  • the black matrix is formed according to the preparation method involved in this embodiment.
  • the cone angle of the prepared black matrix 6 is 90 degrees.
  • the width L1 is less than 10 microns.
  • a negative photoresist is used for coating and film formation, and then an exposure process is performed through a photomask.
  • the exposed part is cured and does not react with the developer, and is retained after the development process, and finally undergoes a post-baking process to obtain the final pattern .
  • the black matrix photoresist is dropped into the photoresist groove and the black matrix can be obtained by only performing an exposure process.
  • This preparation method reduces the development process, makes the method easy to operate, and has no process difficulties ,easy to accomplish. And it reduces the problems of low cone angle or undercut and peeling caused by the development process.
  • FIG. 2 shows a flowchart of the method for preparing a black matrix provided by this embodiment, which includes the following steps:
  • Step S1 Provide a glass substrate 1 and apply a positive photoresist on the glass substrate 1 to form a photoresist layer 2.
  • a negative photoresist is used for coating when making a black matrix.
  • the prepared black matrix usually has a large line width and a cone angle. Lower question.
  • a positive photoresist is used when making a black matrix. Because the positive photoresist has a high resolution, the prepared black matrix can achieve the purpose of thin line width.
  • Step S2 After exposing the positive photoresist, precise positioning and cutting by laser, to obtain the photoresist groove 3;
  • the cross-sectional shape of the photoresist groove 3 is a rectangular shape.
  • the photoresist groove is prepared so that the line width of the black matrix photoresist is guaranteed, the purpose of thin line width can be achieved, and a higher taper angle can be obtained.
  • Step S3 Use the nozzle of the inkjet printer 4 to drop the black matrix photoresist 5 into the photoresist groove by means of inkjet printing;
  • Step S4 Expose the black matrix photoresist 5 to obtain the black matrix 6.
  • This embodiment also provides a glass substrate on which a black matrix is arranged.
  • the black matrix is formed according to the preparation method involved in this embodiment.
  • the cone angle of the prepared black matrix 6 is 90 degrees.
  • the width L2 is less than 10 microns.
  • a negative photoresist is used for coating and film formation, and then an exposure process is performed through a photomask.
  • the exposed part is cured and does not react with the developer, and is retained after the development process, and finally undergoes a post-baking process to obtain the final pattern .
  • the black matrix photoresist is dropped into the photoresist groove and the black matrix can be obtained by only performing an exposure process.
  • This preparation method reduces the development process, makes the method easy to operate, and has no process difficulties ,easy to accomplish. And it reduces the problems of low cone angle or undercut and peeling caused by the development process.
  • FIG. 3 shows a flowchart of the method for preparing a black matrix provided by this embodiment, which includes the following steps:
  • Step S1 Provide a glass substrate 1 and apply a negative photoresist on the glass substrate 1 to form a photoresist layer 2.
  • Step S2 photolithographic exposure is performed on the negative photoresist, and the negative photoresist under the exposed area is left to obtain the photoresist groove 3;
  • the cross-sectional shape of the photoresist groove 3 is a rectangular shape.
  • the photoresist groove is prepared so that the line width of the black matrix photoresist is guaranteed, the purpose of thin line width can be achieved, and a higher taper angle can be obtained.
  • Step S3 Use the nozzle of the inkjet printer 4 to drop the black matrix photoresist 5 into the photoresist groove by means of inkjet printing;
  • Step S4 Expose the black matrix photoresist 5 to obtain the black matrix 6.
  • This embodiment also provides a glass substrate on which a black matrix is arranged.
  • the black matrix is formed according to the preparation method involved in this embodiment.
  • the cone angle of the prepared black matrix 6 is 90 degrees.
  • the width L3 is less than 10 microns.
  • a negative photoresist is used for coating and film formation, and then an exposure process is performed through a photomask.
  • the exposed part is cured and does not react with the developer, and is retained after the development process, and finally undergoes a post-baking process to obtain the final pattern .
  • the black matrix photoresist is dropped into the photoresist groove and the black matrix can be obtained by only performing an exposure process.
  • This preparation method reduces the development process, makes the method easy to operate, and has no process difficulties ,easy to accomplish. And it reduces the problems of low cone angle or undercut and peeling caused by the development process.
  • FIG. 4 shows a flowchart of the method for preparing a black matrix provided by this embodiment, which includes the following steps:
  • Step S1 Provide a glass substrate 1 and apply a negative photoresist on the glass substrate 1 to form a photoresist layer 2.
  • Step S2 after exposing the negative photoresist, precise positioning and cutting by laser to obtain the photoresist groove 3;
  • the cross-sectional shape of the photoresist groove 3 is a rectangular shape.
  • the photoresist groove is prepared so that the line width of the black matrix photoresist is guaranteed, the purpose of thin line width can be achieved, and a higher taper angle can be obtained.
  • Step S3 Use the nozzle of the inkjet printer 4 to drop the black matrix photoresist 5 into the photoresist groove by means of inkjet printing;
  • Step S4 Expose the black matrix photoresist 5 to obtain the black matrix 6.
  • This embodiment also provides a glass substrate on which a black matrix is arranged.
  • the black matrix is formed according to the preparation method involved in this embodiment.
  • the cone angle of the prepared black matrix 6 is 90 degrees.
  • the width L4 is less than 10 microns.
  • a negative photoresist is used for coating and film formation, and then an exposure process is performed through a photomask.
  • the exposed part is cured and does not react with the developer, and is retained after the development process, and finally undergoes a post-baking process to obtain the final pattern .
  • the black matrix photoresist is dropped into the photoresist groove and the black matrix can be obtained by only performing an exposure process.
  • This preparation method reduces the development process, makes the method easy to operate, and has no process difficulties ,easy to accomplish. And it reduces the problems of low cone angle or undercut and peeling caused by the development process.

Abstract

一种玻璃基板上的黑色矩阵的制备方法及其应用，包括以下步骤：步骤S1：提供一玻璃基板（1），在所述玻璃基板（1）上涂布光阻形成光阻层（2）；步骤S2：在所述光阻层（2）上形成光阻凹槽（3）；步骤S3：将黑色矩阵光阻（5）填充入所述光阻凹槽（3）；步骤S4：对所述黑色矩阵光阻（5）进行曝光得到黑色矩阵（6）。通过该制备方法，一方面能够使得黑色矩阵线宽变细、锥角变高，满足高分辨率的需求，有助于提高产品开口率；另一方面由于减少了显影制程，使得方法操作简便，无制程难点，容易实现，并且减少了显影制程带来的锥角低或者发生底切以及剥落的问题。

Description

一种玻璃基板上的黑色矩阵的制备方法及其应用 技术领域
本发明涉及显示面板技术领域，特别涉及一种玻璃基板上的黑色矩阵的制备方法及其应用。
 背景技术
TFT-LCD面板组成中的CF（Color Filter）彩色滤光片是由排列成矩阵的众多像素构成，而每个像素又由红（R）、绿（G）、蓝（B）三个子像素组成，为了防止各色子像素发生混色，通常使用黑色矩阵（Black Matrix）进行分隔。随着像素技术的发展，8K、16K等高分辨率（PPI）显示技术相继出现，这就要求其中像素的数量增多，尺寸减少，同时用于分隔彩色滤光片的黑色矩阵的线宽也需要设计的更小。为满足高分辨率的技术需求，制备的细线宽的黑色矩阵也需要有较高的锥角（Taper Angle），原因是避免低锥角引起的开口率降低的问题。
一直以来，提高像素开口率一直是液晶显示行业的技术追求，常用的技术方案有多种，如利用铜配线代替铝配线来降低电阻率；采用COA或BOA技术，防止黑色矩阵遮光区域或彩膜发生位移、对准不佳导致开口率降低。这些方案均可以提高像素开口率，从而实现高透过率的目的。除此之外，制备细线宽、高锥角的黑色矩阵不仅可以满足高分辨率的需求，同时也可以在一定程度上提升开口率，从而增加面板透过率，节省成本。
现有技术中黑色矩阵主要依照光刻工艺来获得，首先使用负性光阻进行涂布成膜，再经过光罩进行曝光制程，曝光的部分发生固化不与显影液反应，经过显影制程后被保留，最后经过后烘烤制程得到最终图案。但由于负性光阻分辨率低，以及制程工艺存在瓶颈等问题，通常制备得到的黑色矩阵会存在线宽较大，锥角较低等问题。
因此，确有必要来开发一种新型的黑色矩阵的制备方法，以克服现有技术的缺陷。
 技术问题
本发明的一个目的是提供一种玻璃基板上的黑色矩阵的制备方法，其能够解决现有技术中黑色矩阵线宽较大、锥角较低等问题。
 技术解决方案
为实现上述目的，本发明提供一种玻璃基板上的黑色矩阵的制备方法，包括以下步骤：
步骤S1：提供一玻璃基板，在所述玻璃基板上涂布光阻形成光阻层；
步骤S2：在所述光阻层上形成光阻凹槽；
步骤S3：将黑色矩阵光阻填充入所述光阻凹槽；
步骤S4：对所述黑色矩阵光阻进行曝光得到黑色矩阵。
进一步的，在其他实施方式中，其中所述步骤1中的所述光阻为正性光阻，所述步骤S2中所述光阻凹槽是通过光刻制程形成的。
进一步的，在其他实施方式中，其中所述步骤1中的所述光阻为正性光阻，所述步骤S2中所述光阻凹槽是通过激光切割形成的。
进一步的，在其他实施方式中，所述步骤1中的所述光阻为负性光阻，所述步骤S2中所述光阻凹槽是通过光刻制程形成的。
进一步的，在其他实施方式中，其中所述步骤1中的所述光阻为负性光阻，所述步骤S2中所述光阻凹槽是通过激光切割形成的。
进一步的，在其他实施方式中，其中所述光阻凹槽的剖面形状为矩形形状。
进一步的，在其他实施方式中，其中所述光阻凹槽的宽度小于10微米。
进一步的，在其他实施方式中，其中所所述步骤S3中所述黑色矩阵光阻是通过喷墨打印的方式填充入所述光阻凹槽。
为实现上述目的，本发明还提供了一种玻璃基板，其上设置有黑色矩阵；其中所述黑色矩阵是根据本发明涉及的所述制备方法制备形成。
进一步的，在其他实施方式中，其中所述黑色矩阵的锥角为90度。
进一步的，在其他实施方式中，其中所述黑色矩阵的线宽小于10微米。
 有益效果
相对于现有技术，本发明的有益效果在于提供一种玻璃基板上的黑色矩阵的制备方法及其应用，能够使得形成的黑色矩阵线宽变细、锥角变高，满足高分辨率的需求，有助于提高产品开口率；另一方面由于减少了显影制程，使得方法操作简便，无制程难点，容易实现，并且减少了显影制程带来的锥角低或者发生底切以及剥落的问题。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例1提供的黑色矩阵的制备方法的流程图；
图2为本发明实施例2提供的黑色矩阵的制备方法的流程图；
图3为本发明实施例3提供的黑色矩阵的制备方法的流程图；
图4为本发明实施例4提供的黑色矩阵的制备方法的流程图。
 本发明的最佳实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
实施例1
本实施例提供一种玻璃基板上的黑色矩阵的制备方法，请参阅图1，图1所示为本实施例提供的制备黑色矩阵方法的流程图，其包括以下步骤：
步骤S1：提供玻璃基板1，在玻璃基板1上使用正性光阻进行涂布形成光阻层2。
现有技术中制作黑色矩阵时使用负性光阻进行涂布，但由于负性光阻分辨率低，以及制程工艺存在瓶颈等问题，通常制备得到的黑色矩阵会存在线宽较大，锥角较低等问题。本实施例中制作黑色矩阵时使用正性光阻，因为正性光阻分辨率高，所以能够使得制备出的黑色矩阵实现细线宽的目的。
步骤S2：对正性光阻进行光刻曝光，曝光区下方的正性光阻被显掉，得到光阻凹槽3；
在本实施例中，光阻凹槽3的剖面形状为矩形形状。制备光阻凹槽，使得黑色矩阵光阻线宽得到保障，可以实现细线宽的目的，且能够得到较高的锥角。
步骤S3：通过喷墨打印的方式用喷墨打印机4的喷嘴于光阻凹槽内滴入黑色矩阵光阻5；
步骤S4：对黑色矩阵光阻5进行曝光得到黑色矩阵6。
本实施例还提供一种玻璃基板，其上设置有黑色矩阵，所述黑色矩阵是根据本实施例涉及的所述制备方法形成的，制备得到的黑色矩阵6的锥角角度为90度，线宽L1小于10微米。
现有技术中使用负性光阻进行涂布成膜，再经过光罩进行曝光制程，曝光的部分发生固化不与显影液反应，经过显影制程后被保留，最后经过后烘烤制程得到最终图案。
本实施例中制备光阻凹槽后，将黑色矩阵光阻滴入光阻凹槽后只需要进行曝光制程就可以得到黑色矩阵，该制备方法减少了显影制程，使得方法操作简便，无制程难点，容易实现。并且减少了显影制程带来的锥角低或者发生底切以及剥落的问题。
实施例2
本实施例提供一种玻璃基板上的黑色矩阵的制备方法，请参阅图2，图2所示为本实施例提供的制备黑色矩阵方法的流程图，其包括以下步骤：
步骤S1：提供玻璃基板1，在玻璃基板1上使用正性光阻进行涂布形成光阻层2。
现有技术中制作黑色矩阵时使用负性光阻进行涂布，但由于负性光阻分辨率低，以及制程工艺存在瓶颈等问题，通常制备得到的黑色矩阵会存在线宽较大，锥角较低等问题。本实施例中制作黑色矩阵时使用正性光阻，因为正性光阻分辨率高，所以能够使得制备出的黑色矩阵实现细线宽的目的。
步骤S2：对正性光阻进行曝光后，通过激光精确定位切割，得到光阻凹槽3；
在本实施例中，光阻凹槽3的剖面形状为矩形形状。制备光阻凹槽，使得黑色矩阵光阻线宽得到保障，可以实现细线宽的目的，且能够得到较高的锥角。
步骤S3：通过喷墨打印的方式用喷墨打印机4的喷嘴于光阻凹槽内滴入黑色矩阵光阻5；
步骤S4：对黑色矩阵光阻5进行曝光得到黑色矩阵6。
本实施例还提供一种玻璃基板，其上设置有黑色矩阵，所述黑色矩阵是根据本实施例涉及的所述制备方法形成的，制备得到的黑色矩阵6的锥角角度为90度，线宽L2小于10微米。
现有技术中使用负性光阻进行涂布成膜，再经过光罩进行曝光制程，曝光的部分发生固化不与显影液反应，经过显影制程后被保留，最后经过后烘烤制程得到最终图案。
本实施例中制备光阻凹槽后，将黑色矩阵光阻滴入光阻凹槽后只需要进行曝光制程就可以得到黑色矩阵，该制备方法减少了显影制程，使得方法操作简便，无制程难点，容易实现。并且减少了显影制程带来的锥角低或者发生底切以及剥落的问题。
实施例3
本实施例提供一种玻璃基板上的黑色矩阵的制备方法，请参阅图3，图3所示为本实施例提供的制备黑色矩阵方法的流程图，其包括以下步骤：
步骤S1：提供玻璃基板1，在玻璃基板1上使用负性光阻进行涂布形成光阻层2。
步骤S2：对负性光阻进行光刻曝光，曝光区下方的负性光阻留下，得到光阻凹槽3；
在本实施例中，光阻凹槽3的剖面形状为矩形形状。制备光阻凹槽，使得黑色矩阵光阻线宽得到保障，可以实现细线宽的目的，且能够得到较高的锥角。
步骤S3：通过喷墨打印的方式用喷墨打印机4的喷嘴于光阻凹槽内滴入黑色矩阵光阻5；
步骤S4：对黑色矩阵光阻5进行曝光得到黑色矩阵6。
本实施例还提供一种玻璃基板，其上设置有黑色矩阵，所述黑色矩阵是根据本实施例涉及的所述制备方法形成的，制备得到的黑色矩阵6的锥角角度为90度，线宽L3小于10微米。
现有技术中使用负性光阻进行涂布成膜，再经过光罩进行曝光制程，曝光的部分发生固化不与显影液反应，经过显影制程后被保留，最后经过后烘烤制程得到最终图案。
本实施例中制备光阻凹槽后，将黑色矩阵光阻滴入光阻凹槽后只需要进行曝光制程就可以得到黑色矩阵，该制备方法减少了显影制程，使得方法操作简便，无制程难点，容易实现。并且减少了显影制程带来的锥角低或者发生底切以及剥落的问题。
实施例4
本实施例提供一种玻璃基板上的黑色矩阵的制备方法，请参阅图4，图4所示为本实施例提供的制备黑色矩阵方法的流程图，其包括以下步骤：
步骤S1：提供玻璃基板1，在玻璃基板1上使用负性光阻进行涂布形成光阻层2。
步骤S2：对负性光阻进行曝光后，通过激光精确定位切割，得到光阻凹槽3；
在本实施例中，光阻凹槽3的剖面形状为矩形形状。制备光阻凹槽，使得黑色矩阵光阻线宽得到保障，可以实现细线宽的目的，且能够得到较高的锥角。
步骤S3：通过喷墨打印的方式用喷墨打印机4的喷嘴于光阻凹槽内滴入黑色矩阵光阻5；
步骤S4：对黑色矩阵光阻5进行曝光得到黑色矩阵6。
本实施例还提供一种玻璃基板，其上设置有黑色矩阵，所述黑色矩阵是根据本实施例涉及的所述制备方法形成的，制备得到的黑色矩阵6的锥角角度为90度，线宽L4小于10微米。
现有技术中使用负性光阻进行涂布成膜，再经过光罩进行曝光制程，曝光的部分发生固化不与显影液反应，经过显影制程后被保留，最后经过后烘烤制程得到最终图案。
本实施例中制备光阻凹槽后，将黑色矩阵光阻滴入光阻凹槽后只需要进行曝光制程就可以得到黑色矩阵，该制备方法减少了显影制程，使得方法操作简便，无制程难点，容易实现。并且减少了显影制程带来的锥角低或者发生底切以及剥落的问题。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种玻璃基板上的黑色矩阵的制备方法，其中，包括以下步骤：
    步骤S1：提供一玻璃基板，在所述玻璃基板上涂布光阻形成光阻层；
    步骤S2：在所述光阻层上形成光阻凹槽；
    步骤S3：将黑色矩阵光阻填充入所述光阻凹槽；
    步骤S4：对所述黑色矩阵光阻进行曝光得到黑色矩阵。
  2. 根据权利要求1所述的制备方法，其中，所述步骤1中的所述光阻为正性光阻，所述步骤S2中所述光阻凹槽是通过光刻制程形成的。
  3. 根据权利要求1所述的制备方法，其中，所述步骤1中的所述光阻为正性光阻，所述步骤S2中所述光阻凹槽是通过激光切割形成的。
  4. 根据权利要求1所述的制备方法，其中，所述步骤1中的所述光阻为负性光阻，所述步骤S2中所述光阻凹槽是通过光刻制程形成的。
  5. 根据权利要求1所述的制备方法，其中，所述步骤1中的所述光阻为负性光阻，所述步骤S2中所述光阻凹槽是通过激光切割形成的。
  6. 根据权利要求1所述的制备方法，其中，所述光阻凹槽的剖面形状为矩形形状。
  7. 根据权利要求1所述的制备方法，其中，所述步骤S3中所述黑色矩阵光阻是通过喷墨打印的方式填充入所述光阻凹槽。
  8. 一种玻璃基板，其上设置有黑色矩阵；其中，其中所述黑色矩阵是根据权利要求1所述制备方法制备形成。
  9. 根据权利要求8所述的玻璃基板，其中，所述黑色矩阵的锥角为90度。
  10. 根据权利要求8所述的玻璃基板，其中，所述黑色矩阵的线宽小于10微米。
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