WO2020258600A1 - 显示面板及其制备方法、显示装置 - Google Patents

显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2020258600A1
WO2020258600A1 PCT/CN2019/111792 CN2019111792W WO2020258600A1 WO 2020258600 A1 WO2020258600 A1 WO 2020258600A1 CN 2019111792 W CN2019111792 W CN 2019111792W WO 2020258600 A1 WO2020258600 A1 WO 2020258600A1
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Prior art keywords
layer
display panel
signal wiring
light emitting
edge
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Ceased
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PCT/CN2019/111792
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English (en)
French (fr)
Inventor
张涛
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/623,526 priority Critical patent/US20210335981A1/en
Publication of WO2020258600A1 publication Critical patent/WO2020258600A1/zh
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • This application relates to the field of display technology, and in particular to a display panel, a manufacturing method thereof, and a display device.
  • the OLED (Organic Light Emitting Diode) display screen includes a display area and a frame area on one side of the display area.
  • a signal line is arranged in the frame area.
  • the cathode metal layer of the organic light emitting device in the display area is connected to the signal line , Forming an overlapping surface for signal transmission.
  • the lap surface occupies a larger position of the frame area, which makes the frame area of the display panel too wide, which affects the appearance of the display panel.
  • the prior art display panel has the problem of excessively wide frame area.
  • the present application provides a display panel and a manufacturing method thereof, which can effectively solve the problem of excessively wide frame area of the display panel in the prior art.
  • the present application provides a display panel, the display panel including:
  • the substrate including the display area
  • a signal wiring layer is disposed on the substrate, and the edge of the signal wiring layer is attached to the edge of the display area;
  • An insulating layer covers the signal wiring layer, and the edge of the insulating layer is attached to the edge of the signal wiring layer;
  • the via hole is formed from the cathode layer of the organic light emitting device, penetrates the organic light emitting device and the insulating layer, and extends to the surface of the signal wiring layer.
  • the cross-sectional shape of the via hole includes one of a rectangle, a semicircle and a trapezoid, and the maximum width of the via hole is less than or equal to 150 microns.
  • the organic light emitting device further includes a hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, and an electron injection layer that are stacked, and the cathode layer is disposed on the Above the electron injection layer.
  • the insulating layer is made of an inorganic insulating material, and the inorganic insulating material includes one or more combinations of silicon oxide, silicon nitride, or silicon oxynitride.
  • the via is filled with a conductive material, and the organic light-emitting device and the signal wiring layer are electrically connected through the conductive material.
  • the conductive material includes one or more combinations of silver, copper or low-temperature polysilicon.
  • the display panel further includes an encapsulation film layer covering the light-emitting layer, and the edge of the encapsulation film layer is attached to the edge of the display area.
  • the present application also provides a manufacturing method of the display panel, the manufacturing method includes:
  • the substrate including a display area
  • the length of the insulating layer extends to the boundary between the frame area and the display area;
  • the light emitting layer including a plurality of organic light emitting devices arranged at intervals;
  • the display panel on which the light emitting layer is formed is etched and a via is formed.
  • the via is formed from the cathode layer of the organic light emitting device, penetrates the organic light emitting device and the insulating layer, and extends to the The surface of the signal routing layer.
  • the method further includes:
  • a conductive material is filled in the via hole.
  • the present application also provides a display device including the above-mentioned display panel.
  • the signal wiring layer is arranged in the middle and lower part of the display area, and the cathode layer of the display area is connected to the signal wiring layer through the via hole, so as to achieve no wiring in the frame area. Design, and then realize the design of narrow frame of the display panel.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the application.
  • FIG. 2 is a schematic diagram of the structure of a via provided by an embodiment of the application.
  • FIG. 3 is a schematic diagram of another structure of a display panel according to an embodiment of the application.
  • FIG. 4 is a schematic flowchart of a method for manufacturing a display panel according to an embodiment of the application.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the application.
  • the display panel 1 includes:
  • the substrate 11 includes a display area 110;
  • the signal wiring layer 12 is disposed on the substrate 11, and the edge of the signal wiring layer 12 is attached to the edge of the display area 110;
  • the light emitting layer 14 is disposed on the insulating layer 13, and the light emitting layer 14 includes a plurality of organic light emitting devices 141 arranged at intervals;
  • the via 15 is formed from the cathode layer 1411 of the organic light emitting device 141, penetrates the organic light emitting device 141 and the insulating layer 13, and extends to the surface of the signal wiring layer 12.
  • the substrate 11 may be an organic solid, an inorganic solid, or a combination of an organic solid and an inorganic solid.
  • the substrate 11 may be rigid or flexible, and may be processed as a discrete single component (such as a sheet or wafer) or processed as a continuous roll.
  • Typical substrate materials include glass, plastics, metals, ceramics, semiconductors, metal oxides, metal nitrides, metal sulfides, oxide semiconductors, nitride semiconductors, sulfide semiconductors, carbon or combinations of these materials, or are generally Any other material used to form an OLED device that can be a passive matrix device or an active matrix device.
  • the substrate 11 may be a homogeneous mixture of materials, a composite of materials, or a multilayer material.
  • the substrate 11 may be an OLED substrate, that is, a substrate commonly used for preparing OLED devices, such as an active matrix low-temperature polysilicon or an amorphous silicon thin film transistor (Thin Film Transistor, TFT) substrate
  • FIG. 2 is a schematic structural diagram of a via hole provided in an embodiment of the application.
  • the cross-sectional shape of the via hole 15 includes one of a rectangle, a semicircle, and a trapezoid.
  • the maximum width of the hole is less than or equal to 150 microns. It should be noted that when the via is a regular trapezoid or an inverted trapezoid, the maximum width of the via is the maximum length of the upper bottom or the lower bottom of the trapezoid.
  • the organic light emitting device 141 further includes a hole injection layer (Hole Inject Layer, HIL), hole transport layer (Hole Transport Layer, HTL), organic light-emitting layer (Emitting Material Layer, EML), electron transport layer (Electron Transport Layer (EHL) and Electron Inject Layer (EIL) (not shown in the figure).
  • HIL hole injection layer
  • HTL hole transport layer
  • EML Organic light-emitting layer
  • EHL Electron Inject Layer
  • EIL Electron Inject Layer
  • the insulating layer 13 is made of an inorganic insulating material, and the inorganic insulating material includes one or more combinations of silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiONx).
  • the material of the insulating layer 13 includes low temperature polysilicon (Low Temperature Poly-silicon, referred to as LTPS) or a combination of silicon nitride (SiNx). It should be noted that for liquid crystal displays, the use of polycrystalline silicon liquid crystal materials enables thin film circuits to be made thinner and smaller, with lower power consumption.
  • LTPS Low Temperature Poly-silicon
  • SiNx silicon nitride
  • the display panel 1 further includes an array substrate 17 composed of an array of pixel units, including thin film transistors, storage capacitors, and pixel electrodes (not shown in the figure). It is noted that the opening area in the array substrate, that is, the pixel area 16 in FIG. 1, is used for the light-emitting display of the display panel 1.
  • the via hole 15 is filled with a conductive material (not shown in the figure), and the organic light emitting device 141 and the signal wiring layer 12 are electrically connected through the conductive material.
  • the conductive material includes one or more combinations of silver, copper or low temperature polysilicon (LTPS).
  • LTPS low temperature polysilicon
  • FIG. 3 is a schematic diagram of another structure of the display panel according to the embodiment of the application.
  • the array substrate 17 in the display panel further includes a signal wiring layer 12, and the edge of the signal wiring layer 12 is attached to the edge of the display area 110.
  • FIG. 3 is a schematic diagram of another structure of the display panel according to the embodiment of the application.
  • the array substrate 17 in the display panel further includes a signal wiring layer 12, and the edge of the signal wiring layer 12 is attached to the edge of the display area 110.
  • the signal wiring layer 12 is provided under the organic light emitting device 141 in the form of perforation, so that the signal wiring layer 12 and the organic light emitting device 141 are electrically connected through a via hole, so that the The organic light-emitting device 141 is connected to the array substrate 17, and further, in the display panel 1, the signal wiring layer 12 on the substrate 11 passes through the vias 15 to transmit electrical signals to the cathode layer 141, and then to The signal wiring layer 12 on the array substrate forms a loop.
  • the display panel is not provided with a frame area in the display panel, so that a narrow frame design of the display panel is realized.
  • the display panel 1 further includes an encapsulation film layer (not shown in the figure) covering the light-emitting layer 14, and the edge of the encapsulation film layer is attached to the edge of the display area 110.
  • the structure of the encapsulation film layer mainly includes laminated polyvinyl alcohol (PVA) and tri-cellulose acetate film layers (Tri-cellulose).
  • PVA polyvinyl alcohol
  • Tri-cellulose tri-cellulose acetate film layers
  • Acetate, TAC pressure sensitive adhesive film layer
  • PSA film pressure sensitive adhesive film layer
  • release film Release film
  • protective film Protective film
  • the display panel is a flexible screen with a touch function, and may also include a touch layer (not shown in the figure), and the touch layer is disposed above the packaging film layer.
  • the signal wiring layer is arranged in the middle and lower part of the display area, and the cathode layer of the display area is connected to the signal wiring layer through via holes, so as to achieve the design of no wiring in the frame area, and then realize The narrow frame design of the display panel.
  • FIG. 4 is a schematic flow chart of the method for manufacturing a display panel according to an embodiment of the application.
  • the process method includes:
  • the via hole is formed from the cathode layer of the organic light-emitting device, penetrates the organic light-emitting device and the insulating layer, and extends to The surface of the signal wiring layer.
  • the method further includes:
  • a conductive material is filled in the via hole.
  • the conductive material includes one or more combinations of silver, copper or low temperature polysilicon (LTPS).
  • LTPS low temperature polysilicon
  • the display panel and the manufacturing method thereof can be applied to thin film transistors (Thin Film Transistors) of Organic Light-Emitting Diode (OLED).
  • Transistor, TFT Transistor
  • QLED Quantum Dot Light Emitting Diodes
  • micro diode TFT technology is under development.
  • an embodiment of the present invention provides an electronic device, including: a display panel provided by any embodiment of the present invention.
  • the electronic device can be any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.
  • the display panel and the manufacturing method thereof can be applied to thin film transistors (Thin Film Transistors) of Organic Light-Emitting Diode (OLED).
  • Transistor, TFT Transistor
  • QLED Quantum Dot Light Emitting Diodes
  • micro diode TFT technology is under development.
  • the display device provided in the embodiment of this application may be a liquid crystal (Liquid Crystal Display, abbreviated as LCD) display, can also be an electronic ink screen (e-ink) display.
  • LCD Liquid Crystal Display
  • e-ink electronic ink screen
  • AMOLED Active organic light-emitting diode
  • AMOLED can be fabricated on a flexible substrate (Flexible Substrate), making the display bendable (Bendable and Foldable). Flexible displays bring more applicability and functionality to displays.

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  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板（1）及其制备方法、显示装置，显示面板（1）包括：衬底（11），包括显示区域（110）；信号走线层（12），设置于所述衬底（11）上，所述信号走线层（12）的边缘与所述显示区域（110）的边缘贴合；绝缘层（13），所述绝缘层（13）覆盖所述信号走线层（12），且所述绝缘层（13）的边缘与所述显示区域（110）的边缘贴合；发光层（14），设置于所述信号走线层（12）上，所述发光层（14）包括多个间隔排布的有机发光器件（141）；过孔（15），所述过孔（15）由所述有机发光器件（141）的阴极层（1411），贯穿所述有机发光器件（141）与所述绝缘层（13），并延伸至所述信号走线层（12）的表面。通过将信号走线层（12）设置于显示区域（110）的中下方，并通过过孔（15）将该显示区域（110）的阴极层（1411）与该信号走线层（12）连接，以达到边框区域无走线的设计，进而实现显示面板（1）窄边框化的设计。

Description

显示面板及其制备方法、显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。
 背景技术
随着市场的多样化和面板技术的不断提升，人们对显示面板特别是手机屏的要求越来越高，其中外形美观是很重要的一点，窄边框甚至无边框是发展趋势。
OLED（Organic Light Emitting Diode，有机发光二极管）显示屏包括显示区域以及位于该显示区域一侧的边框区域，在边框区域内设有信号线，显示区域中有机发光器件的阴极金属层与信号线相连，形成搭接面从而进行信号传输。该搭接面占用了边框区域较大位置，使得该显示面板边框区域过宽，影响显示面板的美观。
综上所述，现有技术的显示面板存在边框区域过宽的问题。
 技术问题
本申请提供一种显示面板及其制备方法，能有效解决现有技术的显示面板存在边框区域过宽的问题。
 技术解决方案
本申请提供一种显示面板，所述显示面板包括：
衬底，包括显示区域；
信号走线层，设置于所述衬底上，所述信号走线层的边缘与所述显示区域的边缘贴合；
绝缘层，所述绝缘层覆盖所述信号走线层，且所述绝缘层的边缘与所述信号走线层的边缘贴合；
发光层，设置于所述绝缘层上，所述发光层包括多个间隔排布的有机发光器件；
过孔，所述过孔由所述有机发光器件的阴极层，贯穿所述有机发光器件与所述绝缘层，并延伸至所述信号走线层的表面。
在本申请所提供的显示面板中，所述过孔的横截面形状包括矩形、半圆形和梯形中的一种，所述过孔的最大宽度小于或等于150微米。
在本申请所提供的显示面板中，所述有机发光器件还包括层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层，所述阴极层设置于所述电子注入层的上方。
在本申请所提供的显示面板中，所述绝缘层由无机绝缘材料制成，所述无机绝缘材料包括氧化硅、氮化硅或者氮氧化硅的一种或多种组合。
在本申请所提供的显示面板中，所述过孔由导电材料填充，所述有机发光器件与所述信号走线层通过所述导电材料电连接。
在本申请所提供的显示面板中，所述导电材料包括银、铜或者低温多晶硅的一种或多种组合。
在本申请所提供的显示面板中，所述显示面板还包括覆盖所述发光层的封装膜层，所述封装膜层的边缘与所述显示区域的边缘贴合。
本申请还提供一种显示面板的制备方法，所述制备方法包括：
提供衬底，所述衬底包括显示区域；
在所述衬底上形成信号走线层，所述信号走线层的边缘与所述显示区域的边缘贴合；
在所述信号走线层上形成绝缘层，所述绝缘层的长度延伸至所述边框区域与所述显示区域的边界；
在所述绝缘层上形成发光层，所述发光层包括多个间隔排布的有机发光器件；
对形成有所述发光层的所述显示面板进行蚀刻并形成过孔，所述过孔由所述有机发光器件的阴极层，贯穿所述有机发光器件与所述绝缘层，并延伸至所述信号走线层的表面。
在本申请所提供的显示面板的制备方法中，所述对形成有所述发光层的所述显示面板进行蚀刻并形成过孔之后，还包括：
在所述过孔中填充导电材料。
本申请还提供一种显示装置，所述显示装置包括上述所述的显示面板。
 有益效果
相较于现有技术，本申请通过将信号走线层设置于显示区域的中下方，并通过过孔将该显示区的阴极层与该信号走线层连接，以达到边框区域无走线的设计，进而实现显示面板窄边框化的设计。
为了能更进一步了解本申请的特征以及技术内容，请参阅以下有关本申请的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本申请加以限制。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的显示面板的结构示意图。
图2为本申请实施例所提供的过孔的结构示意图。
图3为本申请实施例的显示面板的另一种结构示意图。
图4为本申请实施例的显示面板的制备方法的流程示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
请参见图1，该图1为本申请实施例提供的显示面板的结构示意图，在该图1中，所述显示面板1包括：
衬底11，包括显示区域110；
信号走线层12，设置于所述衬底11上，所述信号走线层12的边缘与所述显示区域110的边缘贴合；
绝缘层13，所述绝缘层13覆盖所述信号走线层12，且所述绝缘层13的边缘与所述信号走线层12的边缘贴合；
发光层14，设置于所述绝缘层13上，所述发光层14包括多个间隔排布的有机发光器件141；
过孔15，所述过孔15由所述有机发光器件141的阴极层1411，贯穿所述有机发光器件141与所述绝缘层13，并延伸至所述信号走线层12的表面。
需要说明的是，衬底11可以是有机固体、无机固体或者是有机固体与无机固体的组合。衬底11可以是刚性或柔性的，并且可以被加工为分立的单个部件（如片或晶圆）或者被加工为连续的卷（roll）。典型的衬底材料包括玻璃、塑料、金属、陶瓷、半导体、金属氧化物、金属氮化物、金属硫化物、氧化物半导体、氮化物半导体、硫化物半导体、碳或这些材料的组合，或者普遍被用于形成可以是无源矩阵器件或有源矩阵器件的OLED器件的任何其它材料。衬底11可以是材料的均匀混合物、材料的复合物或多层材料。衬底11可以是OLED基板，即普遍地用于制备OLED器件的基板，例如有源矩阵低温多晶硅或非晶硅薄膜晶体管（Thin Film Transistor，TFT）基板。
进一步的，请参见图2，该图2为本申请实施例所提供的过孔的结构示意图，所述过孔15的横截面形状包括矩形、半圆形和梯形中的一种，所述过孔的最大宽度小于或等于150微米，需要说明的是，当所述过孔为正梯形或者倒梯形时，所述过孔的最大宽度即该梯形中上底或者下底中的最大长度。
进一步的，所述有机发光器件141还包括层叠设置的空穴注入层（Hole Inject Layer，HIL）、空穴传输层（Hole Transport Layer，HTL）、有机发光层（Emitting Material Layer，EML）、电子传输层（Electron Transport Layer，EHL）及电子注入层（Electron Inject Layer，EIL）（图中未示出），所述阴极层1411设置于所述电子注入层的上方。
进一步的，所述绝缘层13由无机绝缘材料制成，所述无机绝缘材料包括氧化硅（SiOx）、氮化硅（SiNx）或者氮氧化硅（SiONx）的一种或多种组合。
除此之外，该绝缘层13的材料包括低温多晶硅（Low Temperature Poly-silicon，简称LTPS）或氮化硅（SiNx）的组合。需要说明的是，对液晶显示器来说，采用多晶硅液晶材料使得薄膜电路可以做得更薄更小、功耗更低。
在一些实施例中，请参见图1，所述显示面板1还包括阵列基底17，该阵列基底17由像素单元阵列组成，包括薄膜晶体管、存储电容器和像素电极（图中未示出），需要说明的是，该阵列基底中的开口区域，即图1中的像素区域16，用于显示面板1的发光显示。
进一步的，所述过孔15由导电材料（图中未示出）填充，所述有机发光器件141与所述信号走线层12通过所述导电材料电连接。
进一步的，所述导电材料包括银、铜或者低温多晶硅（LTPS）的一种或多种组合。
在一些实施例中，请参见图3，该图3为本申请实施例的显示面板的另一种结构示意图。该显示面板中的阵列基底17上还包括信号走线层12，该信号走线层12的边缘与所述显示区域110的边缘贴合。且在该图3中，该信号走线层12通过打孔的形式设置于该有机发光器件141的下方，使得该信号走线层12与该有机发光器件141通过过孔进行电连接，使得该有机发光器件141与该阵列基底17连接，进而，在该显示面板1中，位于衬底11上的信号走线层12通过过孔15，将电信号传递至该阴极层141，接着再传递至位于阵列基底上的信号走线层12，以形成回路，与此同时，该显示面板未在显示面板中设置边框区域，实现显示面板窄边框化的设计。
在一些实施例中，所述显示面板1还包括覆盖所述发光层14的封装膜层（图中未示出），所述封装膜层的边缘与所述显示区域110的边缘贴合。
进一步的，封装膜层的结构主要包括层叠的聚乙烯醇膜层（Polyvinyl alcohol，PVA）、三醋酸纤维素膜层（Tri-cellulose Acetate，TAC）、压敏胶膜层（PSA film）、离型膜层（Release film）及保护膜层（Protective film）。
进一步的，所述显示面板是具有触摸功能的柔性屏，还可以包括触控层（图中未标识出），所述触控层设置于所述封装膜层上方。
有益效果：本申请通过将信号走线层设置于显示区域的中下方，并通过过孔将该显示区的阴极层与该信号走线层连接，以达到边框区域无走线的设计，进而实现显示面板窄边框化的设计。
本申请还提出一种显示面板的制备方法，请参见图4，该图4为本申请实施例的显示面板的制备方法的流程示意图。该流程方法包括：
S10.提供衬底，所述衬底包括显示区域；
S20.在所述衬底上形成信号走线层，所述信号走线层的边缘与所述显示区域的边缘贴合；
S30.在所述信号走线层上形成绝缘层，所述绝缘层的长度延伸至所述边框区域与所述显示区域的边界；
S40.在所述绝缘层上形成发光层，所述发光层包括多个间隔排布的有机发光器件；
S50.对形成有所述发光层的所述显示面板进行蚀刻并形成过孔，所述过孔由所述有机发光器件的阴极层，贯穿所述有机发光器件与所述绝缘层，并延伸至所述信号走线层的表面。
在一些实施例中，在步骤S50之后，还包括：
在所述过孔中填充导电材料。
需要说明是，所述导电材料包括银、铜或者低温多晶硅（LTPS）的一种或多种组合。
在本实施例中，所述显示面板及其制备方法，可以应用于有机发光二极管（Organic Light-Emitting Diode，OLED）的薄膜晶体管（Thin Film Transistor，TFT）技术开发中，或量子点发光二极管（Quantum Dot Light Emitting Diodes，QLED）的TFT技术开发中，或微型二极管的TFT技术开发中。
基于同一申请构思，本发明实施例提供了一种电子设备，包括：本发明任意实施例提供的显示面板。该电子设备可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
在本实施例中，所述显示面板及其制备方法，可以应用于有机发光二极管（Organic Light-Emitting Diode，OLED）的薄膜晶体管（Thin Film Transistor，TFT）技术开发中，或量子点发光二极管（Quantum Dot Light Emitting Diodes，QLED）的TFT技术开发中，或微型二极管的TFT技术开发中。
除上述申请实施例所提供的显示面板外，本申请实施例还提供的显示装置可以是液晶（Liquid Crystal Display，简称LCD）显示器，也可以是电子墨水屏（e-ink）显示器。主动式有机发光二极体（AMOLED）显示器具有超高反应速度、广色域、高对比度等优势，已被认为是继液晶之后的下一世代显示器。且AMOLED可制作于柔性基板（Flexible Substrate）上，使得显示器具有可弯折（Bendable and Foldable）的特性。柔性显示器为显示器带来更多的应用性与功能性。
综上所述，虽然本发明已以较佳实施例揭露如上，但该较佳实施例并非用以限制本发明，该领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种显示面板，包括：
    衬底，包括显示区域；
    信号走线层，设置于所述衬底上，所述信号走线层的边缘与所述显示区域的边缘贴合；
    绝缘层，所述绝缘层覆盖所述信号走线层，且所述绝缘层的边缘与所述信号走线层的边缘贴合；
    发光层，设置于所述绝缘层上，所述发光层包括多个间隔排布的有机发光器件；及
    过孔，所述过孔由所述有机发光器件的阴极层，贯穿所述有机发光器件与所述绝缘层，并延伸至所述信号走线层的表面。
  2. 根据权利要求1所述的显示面板，其中所述过孔的横截面形状包括矩形、半圆形和梯形中的一种，所述过孔的最大宽度小于或等于150微米。
  3. 根据权利要求1所述的显示面板，其中所述有机发光器件还包括层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层，所述阴极层设置于所述电子注入层的上方。
  4. 根据权利要求1所述的显示面板，其中所述绝缘层由无机绝缘材料制成，所述无机绝缘材料包括氧化硅、氮化硅或者氮氧化硅的一种或多种组合。
  5. 根据权利要求1所述的显示面板，其中所述过孔由导电材料填充，所述有机发光器件与所述信号走线层通过所述导电材料电连接。
  6. 根据权利要求5所述的显示面板，其中所述导电材料包括银、铜或者低温多晶硅的一种或多种组合。
  7. 根据权利要求1所述的显示面板，其中所述显示面板还包括覆盖所述发光层的封装膜层，所述封装膜层的边缘与所述显示区域的边缘贴合。
  8. 一种显示面板的制备方法，包括：
    提供衬底，所述衬底包括显示区域；
    在所述衬底上形成信号走线层，所述信号走线层的边缘与所述显示区域的边缘贴合；
    在所述信号走线层上形成绝缘层，所述绝缘层的长度延伸至所述边框区域与所述显示区域的边界；
    在所述绝缘层上形成发光层，所述发光层包括多个间隔排布的有机发光器件；
    对形成有所述发光层的所述显示面板进行蚀刻并形成过孔，所述过孔由所述有机发光器件的阴极层，贯穿所述有机发光器件与所述绝缘层，并延伸至所述信号走线层的表面。
  9. 根据权利要求8所述的制备方法，其中所述对形成有所述发光层的所述显示面板进行蚀刻并形成过孔之后，所述制备方法还包括：
    在所述过孔中填充导电材料。
  10. 一种显示装置，其包括如权利要求1所述的显示面板。
PCT/CN2019/111792 2019-06-24 2019-10-18 显示面板及其制备方法、显示装置 Ceased WO2020258600A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN110265447A (zh) * 2019-06-24 2019-09-20 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN110518055A (zh) * 2019-09-26 2019-11-29 昆山工研院新型平板显示技术中心有限公司 一种显示面板和显示装置
CN111583812B (zh) 2020-05-26 2023-09-22 京东方科技集团股份有限公司 连接基板及制备方法、拼接屏、显示装置
CN113629205B (zh) 2021-07-19 2023-02-10 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN116419587A (zh) * 2021-12-30 2023-07-11 Tcl科技集团股份有限公司 一种发光二极管及制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206673A (zh) * 2016-09-09 2016-12-07 深圳市华星光电技术有限公司 Amoled显示装置
CN108336116A (zh) * 2018-02-08 2018-07-27 京东方科技集团股份有限公司 一种oled阵列基板及其制备方法、显示装置
US20180342694A1 (en) * 2016-12-27 2018-11-29 Wuhan China Star Optoelectronics Technology Co., Ltd. Oled display unit and method for manufacturing the same
CN110265447A (zh) * 2019-06-24 2019-09-20 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130068714A (ko) * 2011-12-16 2013-06-26 삼성디스플레이 주식회사 발광효율이 향상된 유기발광 표시장치 및 그 제조방법
KR102443645B1 (ko) * 2016-01-13 2022-09-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN108364988A (zh) * 2018-02-27 2018-08-03 京东方科技集团股份有限公司 触控显示基板及其制作方法、显示装置
TWI678803B (zh) * 2018-12-26 2019-12-01 友達光電股份有限公司 顯示裝置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206673A (zh) * 2016-09-09 2016-12-07 深圳市华星光电技术有限公司 Amoled显示装置
US20180342694A1 (en) * 2016-12-27 2018-11-29 Wuhan China Star Optoelectronics Technology Co., Ltd. Oled display unit and method for manufacturing the same
CN108336116A (zh) * 2018-02-08 2018-07-27 京东方科技集团股份有限公司 一种oled阵列基板及其制备方法、显示装置
CN110265447A (zh) * 2019-06-24 2019-09-20 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置

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