CN109671748B - 一种显示面板及其制作方法 - Google Patents

一种显示面板及其制作方法 Download PDF

Info

Publication number
CN109671748B
CN109671748B CN201811521178.5A CN201811521178A CN109671748B CN 109671748 B CN109671748 B CN 109671748B CN 201811521178 A CN201811521178 A CN 201811521178A CN 109671748 B CN109671748 B CN 109671748B
Authority
CN
China
Prior art keywords
layer
display panel
metal layer
disposed
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811521178.5A
Other languages
English (en)
Other versions
CN109671748A (zh
Inventor
胡俊艳
白思航
王国超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN201811521178.5A priority Critical patent/CN109671748B/zh
Priority to PCT/CN2019/078873 priority patent/WO2020118956A1/zh
Priority to US16/472,030 priority patent/US11227878B2/en
Publication of CN109671748A publication Critical patent/CN109671748A/zh
Application granted granted Critical
Publication of CN109671748B publication Critical patent/CN109671748B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L2021/775Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本申请提出了一种显示面板及其制作方法,包括显示区域以及非显示区域,所述显示面板包括:衬底、设置在所述衬底上的薄膜晶体管、设置在所述薄膜晶体管上的平坦化层、以及设置在所述平坦化层与所述衬底之间的至少一个缓冲单元,所述缓冲单元位于所述薄膜晶体管外;其中,所述缓冲单元位于所述显示区域,用以缓冲所述显示面板在弯曲时的应力。本申请通过在显示面板中的显示区域设置至少一个缓冲单元,以在显示面板的柔性弯曲时,缓冲应力进而避免发生应力集中损伤显示面板。

Description

一种显示面板及其制作方法
技术领域
本申请涉及平板显示器领域,特别涉及一种显示面板及其制作方法。
背景技术
在平板显示技术中,有机发光二极管(Organic Light-Emitting Diode,OLED)显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点,逐渐成为继液晶显示器后的第三代显示技术。相对于液晶显示器(Liquid crystaldisplays,LCD),OLED具有更省电,更薄,且视角宽的优势,这是LCD无法比拟的。目前,人们对显示面板的屏占比有了更高的要求。
目前行业内为了实现显示面板的窄边框显示,将显示面板的非显示区域弯折到显示面板显示屏幕的背面,随后在非显示区域进行柔性线路板和驱动IC的邦定,而显示面板在进行柔性弯曲时,会导致显示区域走线被折伤,且会产生应力集中损伤显示面板。因此,目前亟需一种显示面板及其制作方法以解决上述问题。
发明内容
本申请提供一种显示面板及制作方法,以解决现有显示面板在进行柔性弯曲时,导致显示区域走线被折伤,产生应力集中损伤面板。
为解决上述问题,本申请提供的技术方案如下:
本申请提供一种显示面板,包括显示区域以及位于所述显示区域外围的非显示区域,所述显示面板包括:
衬底;
设置在所述衬底上的薄膜晶体管阵列,所述薄膜晶体管阵列包括阵列分布的薄膜晶体管:
设置在所述薄膜晶体管上的平坦化层;以及
设置在所述平坦化层与所述衬底之间的至少一个缓冲单元,所述缓冲单元位于所述薄膜晶体管外;
其中,所述缓冲单元位于所述显示区域,用以缓冲所述显示面板在弯曲时的应力。
根据本申请一实施例,所述薄膜晶体管包括:
有源层;
设置在所述有源层上的第一栅绝缘层;
设置在所述第一栅绝缘层上的第一金属层;
设置在所述第一金属层上的第二栅绝缘层;
设置在所述第二栅绝缘层上的第一源漏极金属层;
设置在所述第一源漏极金属层上的有机层;
设置在所述有机层上的第二源漏极金属层;
其中,所述第一源漏极金属层和第二源漏极金属层通过第一过孔电连接,所述第二源漏极金属层通过第二过孔与所述有源层电连接。
根据本申请一实施例,所述缓冲单元设置在所述有机层与所述衬底之间,并与所述有机层和所述衬底接触。
根据本申请一实施例,所述缓冲单元与所述有机层采用同种材料制备。
根据本申请一实施例,所述缓冲单元设置在相邻所述薄膜晶体管之间。
根据本申请一实施例,相邻所述薄膜晶体管之间设置有至少一个所述缓冲单元。
根据本申请一实施例,还包括设置在所述平坦化层与所述衬底之间的并与所述平坦化层和所述衬底接触的柔性层,所述柔性层位于所述非显示区域。
根据本申请一实施例,还包括:
设置在所述平坦化层内的第三过孔;
设置在所述平坦化层上的阳极层,所述阳极层通过第三过孔与所述第二源漏极金属层电连接;
设置在所述平坦化层上的像素定义层;以及
设置在所述像素定义层上的支撑柱。
根据本申请的另一个方面,还提供了一种显示面板的制作方法,所述显示面板包括显示区域以及位于所述显示区域外围的非显示区域,所述显示面板的制作方法包括:
步骤S10、提供一衬底,并在所述衬底上依次形成有源层、第一栅绝缘层、第一金属层、第二栅绝缘层以及第一源漏极金属层;
步骤S20、在所述第一栅绝缘层、第二栅绝缘层内形成第一通孔和第二通孔,所述第一通孔形成在所述显示区域,所述第二通孔形成在所述非显示区域;
步骤S30、在所述第一源漏极金属层上形成有机层,有机材料将所述第一通孔以形成缓冲单元,所述有机材料将所述第二通孔填充以形成柔性层;
步骤S40、在所述有机层上依次形成第二源漏极金属层、平坦化层、阳极层、像素定义层和支撑层。
根据本申请一实施例,所述显示面板包括阵列分布的薄膜晶体管,所述薄膜晶体管包括:
所述有源层;
设置在所述有源层上的所述第一栅绝缘层;
设置在所述第一栅绝缘层上的所述第一金属层;
设置在所述第一金属层上的所述第二栅绝缘层;
设置在所述第二栅绝缘层上的所述第一源漏极金属层;
设置在所述第一源漏极金属层上的所述有机层;
设置在所述有机层上的所述第二源漏极金属层;
其中,所述缓冲单元设置在相邻所述薄膜晶体管之间。
有益效果:本申请通过在显示面板中的显示区域设置至少一个缓冲单元,以在显示面板的柔性弯曲时,缓冲应力,进而避免发生应力集中损伤显示面板。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请一实施例提供的一种显示面板的结构示意图;
图2为本申请另一实施例提供的一种显示面板的结构示意图;
图3为本申请又一实施例提供的一种显示面板的制作方法的流程示意图;
图4a-4d所示为本申请又一实施例提供的一种显示面板的制作方法的工艺流程图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。在图中,结构相似的单元是用以相同标号表示。
图1和图2为本申请一实施例提供的一种显示面板的结构示意图;
本申请提供了一种显示面板,包括显示区域A以及位于所述显示区域A外围的非显示区域B,所述显示区域A包括阵列分布的像素单元,所述非显示区域B包括pad区域,所述显示面板包括:
衬底11,所述衬底11包括柔性衬底、阻挡层以及缓冲层;所述柔性衬底的制备材料包括聚酰亚胺,所述阻挡层包括采用金属材料制备的遮光层,所述缓冲层的制备材料包括二氧化硅和氮化硅中的至少一者。
设置在所述衬底11上的薄膜晶体管阵列,所述薄膜晶体管阵列包括阵列分布的薄膜晶体管12:
进一步的,所述薄膜晶体管包括依次层叠设置的有源层121、第一栅绝缘层122、第一金属层123、第二栅绝缘层124、第一源漏极金属层125、有机层126以及第二源漏极金属层127;
通常的,所述第一金属层123为栅极层。
具体的,相对与现有技术,本申请中采用所述第一源漏极金属层123代替第二栅极层,使得第一源漏极金属层125既与第一金属层123形成存储电容,又与第二源漏极金属层127进行有效的连接,进而降低了显示面板的窄边框设计带来的压降,使显示面板的画面更加均匀;再者,通过采用所述第一源漏极金属层123代替第二栅极层,可以省去第二平坦化层,有效的节省了显示面板的工艺,减薄了显示面板的膜层厚度。
如图4c和4d所示,所述第一源漏极金属层125和第二源漏极金属层127通过第一过孔191电连接,所述第二源漏极金属层127通过第二过孔192与所述有源层121电连接。
所述第一源漏极金属层125和第二源漏极金属层127均为钛、铝、钛三层金属膜层组合而成。
设置在所述薄膜晶体管12上的平坦化层13,通常的,所述平坦化层13的制备材料包括有机材料;以及
设置在所述平坦化层13与所述衬底11之间的至少一个缓冲单元14,所述缓冲单元14位于所述薄膜晶体管12外;
其中,所述缓冲单元14位于所述显示区域A,用以缓冲所述显示面板在弯曲时的应力。
可以理解的是,由于现有技术中,所述显示区域的多数膜层均采用无机膜层制备,由于无机膜层的延展性较差,在进行显示面板的柔性弯曲时,无机膜层会由于应力集中进而导致显示面板内的部件受损;再者,现有的显示面板仅在非显示区域B内设置柔性层,进而实现非显示区域B的静态弯曲,但是这样的结构并不能实现显示区域A的动态弯曲。本申请通过在显示区域内设置缓冲单元,用以缓冲显示面板在弯曲时的应力,不仅提高了显示面板的弯曲性能,而且能够利于实现非显示区域A的动态弯曲。
进一步的,所述缓冲单元14就相当于显示面板显示区域的“缓冲带”,通过缓冲单元的设置将显示面板在弯曲时的应力释放。
所述有机层126的制备材料为有机材料,有机材料通常具有较好的弯曲性,为了显示面板制程的简化,可以设置缓冲单元14的制备材料与有机层的制备材料相同,进而使得有机层126与缓冲单元14在同一道工艺中制备。
具体的,所述缓冲单元14设置在所述有机层126与所述衬底11之间,并与所述有机层126和所述衬底11接触,进而最大化的增加缓冲单元在显示面板中所占的比例;当然,所述缓冲单元14的并不仅限于与所述有机层126和所述衬底11接触,也可以仅设置在第一栅绝缘层122与第二栅绝缘层124中的其中一者,具体可根据显示面板的实际需求进行设计。
优选的,为了避开缓冲单元14对显示区域内薄膜晶体管12的影响,将缓冲单元14设置在相邻薄膜晶体管12之间,进而避免缓冲单元14与薄膜晶体管12的有源层121、栅极123、第一源漏极金属层125和第二源漏极金属127接触。
所述相邻薄膜晶体管12之间的缓冲单元14的数量并不仅限于一个,若是空间足够,也可以设置两个或者三个,即相邻所述薄膜晶体管之间12设置有至少一个所述缓冲单元14,进而提高显示面板中缓冲单元所占的比重,提升显示面板的弯曲性能。
进一步的,所述显示面板还包括设置在所述平坦化层13与所述衬底11之间的并与所述平坦化层13和所述衬底11接触的柔性层151,所述柔性层15位于所述非显示区域B,用于实现显示面板非显示区域B的可弯曲性。
所述显示面板还包括:
所述平坦化层13内设置有第三过孔193;
设置在所述平坦化层13上的阳极层16,所述阳极层16通过第三过孔193与所述第二源漏极金属层127电连接;
设置在所述平坦化层13上的像素定义层20;以及
设置在所述像素定义层20上的支撑柱17。
在本申请中,所述显示区域的柔性层所在的过孔可采用几次蚀刻进行,蚀刻深度比例依显示面板弯曲时的应力情况而定。
所述第一源漏极金属层125和第二源漏极金属层127之间的有机光阻杨氏模量小于5Gpa,缓冲单元14和柔性层15的设置,能够调节上下膜层之间的应力,对显示面板弯曲时的应力进行分散,利于第一源漏极金属层125和第二源漏极金属层127走线的弯折。
如图3和图4a-4b,根据本申请的另一个方面,还提出了一种显示面板的制作方法,所述显示面板包括显示区域A以及位于所述显示区域A外围的非显示区域B,所述显示面板的制作方法包括:
如图4a,步骤S10、提供一衬底11,所述衬底11包括柔性衬底、阻挡层以及缓冲层;所述柔性衬底的制备材料包括聚酰亚胺,所述阻挡层包括采用金属材料制备的遮光层,所述缓冲层的制备材料包括二氧化硅和氮化硅中的至少一者;并在所述衬底11上依次形成有源层121、第一栅绝缘层122、第一金属层123、第二栅绝缘层124以及第一源漏极金属层125;
所述步骤S10包括:提供一衬底,在所述衬底11上形成初始有源层,并对初始有源层进行结晶和图案化,以完成有源层121的制备,在有源层上121沉积第一栅绝缘层122和初始第一金属层,并对初始第一金属层进行图案化以形成第一金属层123;在所述第一金属层123上形成第二栅绝缘层124和初始第一源漏极金属层,并对初始第一源漏极金属层进行图案化以形成第一源漏极金属层125;
如图4b所示,步骤S20、在所述第一栅绝缘层122、第二栅绝缘层124内形成第一通孔18a和第二通孔18b,所述第一通孔18a形成在所述显示区域A,所述第二通孔18b形成在所述非显示区域B;
如图4c所示,步骤S30、在所述第一源漏极金属层125上形成有机层126,有机材料将所述第一通孔18a以形成缓冲单元14,所述有机材料将所述第二通孔18b填充以形成柔性层15,所述有机层126、缓冲单元14和柔性层15均在一道光罩中制备,进而能够节省显示面板中的光罩使用次数。
具体的,还包括同时在有机层126内形成将第二源漏极金属层127与第一源漏极金属层125电连接的第一过孔191,将第二源漏极金属层127与有源层121连接有机层126中对应位置的第二过孔192,并对所述第一栅绝缘层122、第二栅绝缘层124的目标位置进行刻蚀,以形成第二源漏极金属层127与有源层121进行连接的过孔。
如图4d所示,步骤S40、在所述有机层126上依次形成第二源漏极金属层127、平坦化层13、阳极层16、像素定义层20和支撑层17。
优选的,所述显示面板包括阵列分布的薄膜晶体管12,所述薄膜晶体管12包括:
所述有源层121;
设置在所述有源层121上的所述第一栅绝缘层122;
设置在所述第一栅绝缘层122上的所述第一金属层123;
设置在所述第一金属层123上的所述第二栅绝缘层124;
设置在所述第二栅绝缘层124上的所述第一源漏极金属层125;
设置在所述第一源漏极金属层125上的所述有机层126;
设置在所述有机层126上的所述第二源漏极金属层127;
其中,所述缓冲单元14设置在相邻所述薄膜晶体管之间。
本申请提出了一种显示面板及其制作方法,通过在显示面板中的显示区域设置至少一个缓冲单元,以在显示面板的柔性弯曲时,缓冲应力进而避免发生应力集中损伤显示面板。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。

Claims (9)

1.一种显示面板,其特征在于,包括显示区域以及位于所述显示区域外围的非显示区域,所述显示面板包括:
衬底;
设置在所述衬底上的薄膜晶体管阵列,所述薄膜晶体管阵列包括阵列分布的薄膜晶体管:
设置在所述薄膜晶体管上的平坦化层;以及
设置在所述平坦化层与所述衬底之间的至少一个缓冲单元,所述缓冲单元位于所述薄膜晶体管外;
所述缓冲单元位于所述显示区域,用以缓冲所述显示面板在弯曲时的应力;
所述薄膜晶体管包括:有源层;设置在所述有源层上的第一栅绝缘层;设置在所述第一栅绝缘层上的第一金属层;设置在所述第一金属层上的第二栅绝缘层;设置在所述第二栅绝缘层上的第一源漏极金属层;设置在所述第一源漏极金属层上的有机层;设置在所述有机层上的第二源漏极金属层;
其中,所述第一源漏极金属层和第二源漏极金属层通过第一过孔电连接,所述第二源漏极金属层通过第二过孔与所述有源层电连接。
2.根据权利要求1所述的显示面板,其特征在于,所述缓冲单元设置在所述有机层与所述衬底之间,并与所述有机层和所述衬底接触。
3.根据权利要求2所述的显示面板,其特征在于,所述缓冲单元与所述有机层采用同种材料制备。
4.根据权利要求1所述的显示面板,其特征在于,所述缓冲单元设置在相邻所述薄膜晶体管之间。
5.根据权利要求1所述的显示面板,其特征在于,相邻所述薄膜晶体管之间设置有至少一个所述缓冲单元。
6.根据权利要求1所述的显示面板,其特征在于,还包括设置在所述平坦化层与所述衬底之间的并与所述平坦化层和所述衬底接触的柔性层,所述柔性层位于所述非显示区域。
7.根据权利要求1所述的显示面板,还包括:
设置在所述平坦化层内的第三过孔;
设置在所述平坦化层上的阳极层,所述阳极层通过第三过孔与所述第二源漏极金属层电连接;
设置在所述平坦化层上的像素定义层;以及
设置在所述像素定义层上的支撑柱。
8.一种显示面板的制作方法,其特征在于,所述显示面板包括显示区域以及位于所述显示区域外围的非显示区域,所述显示面板的制作方法包括:
步骤S10、提供一衬底,并在所述衬底上依次形成有源层、第一栅绝缘层、第一金属层、第二栅绝缘层以及第一源漏极金属层;
步骤S20、在所述第一栅绝缘层、第二栅绝缘层内形成第一通孔和第二通孔,所述第一通孔形成在所述显示区域,所述第二通孔形成在所述非显示区域;
步骤S30、在所述第一源漏极金属层上形成有机层,有机材料将所述第一通孔填充以形成缓冲单元,所述有机材料将所述第二通孔填充以形成柔性层;
步骤S40、在所述有机层上依次形成第二源漏极金属层、平坦化层、阳极层、像素定义层和支撑层。
9.根据权利要求8所述的显示面板的制作方法,其特征在于,所述显示面板包括阵列分布的薄膜晶体管,所述薄膜晶体管包括:
所述有源层;
设置在所述有源层上的所述第一栅绝缘层;
设置在所述第一栅绝缘层上的所述第一金属层;
设置在所述第一金属层上的所述第二栅绝缘层;
设置在所述第二栅绝缘层上的所述第一源漏极金属层;
设置在所述第一源漏极金属层上的所述有机层;
设置在所述有机层上的所述第二源漏极金属层;
其中,所述缓冲单元设置在相邻所述薄膜晶体管之间。
CN201811521178.5A 2018-12-12 2018-12-12 一种显示面板及其制作方法 Active CN109671748B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201811521178.5A CN109671748B (zh) 2018-12-12 2018-12-12 一种显示面板及其制作方法
PCT/CN2019/078873 WO2020118956A1 (zh) 2018-12-12 2019-03-20 一种显示面板及其制作方法、显示装置
US16/472,030 US11227878B2 (en) 2018-12-12 2019-03-20 Display panel, manufacturing method for the display panel, and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811521178.5A CN109671748B (zh) 2018-12-12 2018-12-12 一种显示面板及其制作方法

Publications (2)

Publication Number Publication Date
CN109671748A CN109671748A (zh) 2019-04-23
CN109671748B true CN109671748B (zh) 2020-06-16

Family

ID=66144340

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811521178.5A Active CN109671748B (zh) 2018-12-12 2018-12-12 一种显示面板及其制作方法

Country Status (3)

Country Link
US (1) US11227878B2 (zh)
CN (1) CN109671748B (zh)
WO (1) WO2020118956A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110112204B (zh) * 2019-06-05 2022-07-29 京东方科技集团股份有限公司 一种阵列基板、显示面板和显示装置
CN110706599B (zh) * 2019-10-25 2022-01-25 Tcl华星光电技术有限公司 显示面板及显示装置
CN111063697A (zh) * 2019-12-11 2020-04-24 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制备方法、显示面板
US11271057B2 (en) * 2020-02-12 2022-03-08 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate, manufacturing method thereof, and display panel
CN112002702B (zh) * 2020-08-06 2022-09-27 武汉华星光电半导体显示技术有限公司 柔性显示面板及可卷曲显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9985055B2 (en) * 2013-10-09 2018-05-29 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
KR102380161B1 (ko) * 2015-01-15 2022-03-29 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 리페어 방법
KR102505879B1 (ko) * 2016-03-24 2023-03-06 삼성디스플레이 주식회사 디스플레이 장치
CN107546247B (zh) * 2017-07-26 2020-03-17 武汉华星光电半导体显示技术有限公司 一种有源矩阵有机发光二极管显示器及其制作方法
CN108010921B (zh) * 2017-11-30 2021-03-23 上海天马微电子有限公司 一种柔性显示面板及显示装置
CN208014704U (zh) * 2018-03-29 2018-10-26 云谷(固安)科技有限公司 显示装置及柔性显示器

Also Published As

Publication number Publication date
CN109671748A (zh) 2019-04-23
US20210335842A1 (en) 2021-10-28
WO2020118956A1 (zh) 2020-06-18
US11227878B2 (en) 2022-01-18

Similar Documents

Publication Publication Date Title
CN109671748B (zh) 一种显示面板及其制作方法
US11800783B2 (en) Array substrate, stretchable display device, and method for manufacturing array substrate
CN106782416B (zh) 一种显示面板及显示装置
US11043547B2 (en) Display panel and display device having same
US11437439B2 (en) Display device
CN110112191B (zh) 一种显示面板、显示装置及其制造方法
KR100741968B1 (ko) 유기 전계 발광 표시 소자 및 그 제조방법
US11121331B2 (en) Flexible substrate and display panel using the same
CN105047088B (zh) 一种阵列基板和可穿戴设备
KR100761076B1 (ko) 평판표시장치
US11144170B2 (en) Display panel and display module
KR20030094656A (ko) 액티브 매트릭스 유기 전계 발광 소자
JP2022539621A (ja) ディスプレイパネル及びその製造方法、表示装置
WO2019006831A1 (zh) 双面oled显示器
US20210225950A1 (en) Substantially transparent display substrate, substantially transparent display apparatus, and method of fabricating substantially transparent display substrate
WO2020189131A1 (ja) 表示装置
CN112582382A (zh) 显示面板及显示装置
US11342397B2 (en) Array substrate and manufacturing method thereof
US20230112912A1 (en) Display panel, display apparatus, method of preventing electro-magnetic interference in display panel, and method of fabricating display panel
US20210233978A1 (en) Method of fabricating array substrate, array substrate, and display apparatus
KR20210034335A (ko) 플렉서블 표시장치
KR102118460B1 (ko) 디스플레이장치 및 그의 제조방법
US11309378B2 (en) Method of manufacturing flexible display
US20230209897A1 (en) Display panel and display apparatus including the same
KR20230127398A (ko) 표시 장치 및 그 제조 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant