WO2020258519A1 - 有机发光二极管显示器 - Google Patents

有机发光二极管显示器 Download PDF

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Publication number
WO2020258519A1
WO2020258519A1 PCT/CN2019/104607 CN2019104607W WO2020258519A1 WO 2020258519 A1 WO2020258519 A1 WO 2020258519A1 CN 2019104607 W CN2019104607 W CN 2019104607W WO 2020258519 A1 WO2020258519 A1 WO 2020258519A1
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Prior art keywords
substrate
vapor deposition
cathode
deposition angle
organic light
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PCT/CN2019/104607
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English (en)
French (fr)
Inventor
聂诚磊
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020258519A1 publication Critical patent/WO2020258519A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance

Definitions

  • the present application relates to the field of display technology, and in particular to an organic light emitting diode display.
  • organic light emitting diode (Organic Light Emitting Diode, OLED) displays include top emission (Top Emission), bottom emission (Bottom Emission) and transparent display (Transparent Display) and other lighting methods.
  • OLED Organic Light Emitting Diode
  • the top-emitting OLED display has the advantages of high resolution and large light-emitting area, and is widely used in small-size OLED display panels. Since large-size display panels have a trend of increasing resolution, top-emitting display panels have become an important research direction for large-size display panels.
  • the cathode material is required to be transparent and the thickness of the cathode should not be too large to ensure the light output rate of the OLED display panel.
  • the transparent electrode voltage drop (IR) will occur when the top-emitting display panel is manufactured into a large-size display panel. Drop) is too large to affect the brightness of the display panel.
  • the purpose of the present application is to provide an organic light-emitting diode display to solve the problem of excessive cathode voltage drop that affects the luminous brightness of the display panel when the top-emitting display panel is manufactured into a large-size display panel.
  • organic light emitting diode display comprising:
  • a pixel definition layer formed on the planarization layer, the auxiliary electrode, and the anode and having a first opening and a second opening, the first opening is provided above the anode, and the second opening is provided Above the auxiliary electrode;
  • An organic functional layer formed on the pixel definition layer, on the cathode isolation column, and on the anode located in the first opening;
  • the auxiliary electrode includes an input electrode and a connection electrode, the connection electrode and the anode are arranged in the same layer, the input electrode is formed on the substrate, and the connection electrode and the input electrode pass on the planarization layer ⁇ via connection.
  • the cathode spacer includes a central portion and a peripheral portion surrounding the central portion, and a side surface of the peripheral portion has the third opening, and there is a gap between the peripheral portion and the central portion. The gap forms the contact hole.
  • the central part is located at a central position of the peripheral part.
  • the organic functional layer and the cathode are formed by vacuum evaporation.
  • the central part is a rectangular parallelepiped
  • the peripheral part is a round-shaped surrounding part having the third opening on the side surface
  • the central part and the peripheral part are arranged in a direction perpendicular to the substrate.
  • the height of the upper part is H
  • the width of the gap between the peripheral part and the central part in the direction parallel to the substrate is D
  • the vapor deposition angle forming the organic functional layer is a
  • the vapor deposition angle is b
  • the height H, the width D, the vapor deposition angle a, and the vapor deposition angle b satisfy the following formula:
  • the value range of the vapor deposition angle a is greater than or equal to 0 degrees and less than 90 degrees
  • the value range of the vapor deposition angle b is greater than 0 degrees and less than the vapor deposition angle a
  • the height H and The value range of the width D is greater than zero.
  • the central part is an inverted trapezoidal part in the direction in which the anode points to the substrate
  • the peripheral part is a circle-shaped surrounding part having the third opening on the side surface
  • the center The height of the part in the direction perpendicular to the substrate is H2
  • the height of the peripheral part in the direction perpendicular to the substrate is H3
  • the end edge of the central part away from the substrate is in the direction parallel to the substrate.
  • the vertical distance to the inner wall of the peripheral portion is D1
  • the vapor deposition angle for forming the organic functional layer is d
  • the vapor deposition angle for forming the cathode is c
  • the height H2 the height H3
  • the evaporation angle c, and the evaporation angle d satisfy the following formula:
  • the value range of the vapor deposition angle d is greater than or equal to 0 degrees and less than 90 degrees
  • the value range of the vapor deposition angle c is greater than 0 degrees and less than the vapor deposition angle d
  • the height H2 The value range of is greater than 0, the value range of the height H3 is greater than the height H2, and the value range of the vertical distance D1 is greater than 0.
  • the vertical projection area of the end of the peripheral portion close to the substrate on the substrate is less than or equal to the vertical projection area of the end of the peripheral portion away from the substrate on the substrate.
  • the vertical projection area of the end of the peripheral portion close to the substrate on the substrate is smaller than the vertical projection area of the end of the peripheral portion away from the substrate on the substrate.
  • the organic functional layer is at least one of an organic light emitting layer, an electron transport layer, and an electron injection layer.
  • organic light emitting diode display comprising:
  • a pixel definition layer formed on the planarization layer, the auxiliary electrode, and the anode and having a first opening and a second opening, the first opening is provided above the anode, and the second opening is provided Above the auxiliary electrode;
  • An organic functional layer formed on the pixel definition layer, on the cathode isolation column, and on the anode located in the first opening;
  • the cathode spacer includes a central portion and a peripheral portion surrounding the central portion, and a side surface of the peripheral portion has the third opening, and there is a gap between the peripheral portion and the central portion. The gap forms the contact hole.
  • the central part is located at a central position of the peripheral part.
  • the organic functional layer and the cathode are formed by vacuum evaporation.
  • the central part is a rectangular parallelepiped
  • the peripheral part is a round-shaped surrounding part having the third opening on the side surface
  • the central part and the peripheral part are arranged in a direction perpendicular to the substrate.
  • the height of the upper part is H
  • the width of the gap between the peripheral part and the central part in the direction parallel to the substrate is D
  • the vapor deposition angle forming the organic functional layer is a
  • the vapor deposition angle is b
  • the height H, the width D, the vapor deposition angle a, and the vapor deposition angle b satisfy the following formula:
  • the value range of the vapor deposition angle a is greater than or equal to 0 degrees and less than 90 degrees
  • the value range of the vapor deposition angle b is greater than 0 degrees and less than the vapor deposition angle a
  • the height H and The value range of D is greater than zero.
  • the central part is an inverted trapezoidal part in the direction in which the anode points to the substrate
  • the peripheral part is a circle-shaped surrounding part having the third opening on the side surface
  • the center The height of the part in the direction perpendicular to the substrate is H2
  • the height of the peripheral part in the direction perpendicular to the substrate is H3
  • the end edge of the central part away from the substrate is in the direction parallel to the substrate.
  • the vertical distance to the inner wall of the peripheral portion is D1
  • the vapor deposition angle for forming the organic functional layer is d
  • the vapor deposition angle for forming the cathode is c
  • the height H2 the height H3
  • the evaporation angle c, and the evaporation angle d satisfy the following formula:
  • the value range of the vapor deposition angle d is greater than or equal to 0 degrees and less than 90 degrees
  • the value range of the vapor deposition angle c is greater than 0 degrees and less than the vapor deposition angle d
  • the height H2 The value range of is greater than 0, the value range of the height H3 is greater than the height H2, and the value range of the vertical distance D1 is greater than 0.
  • the vertical projection area of the end of the peripheral portion close to the substrate on the substrate is less than or equal to the vertical projection area of the end of the peripheral portion away from the substrate on the substrate.
  • the vertical projection area of the end of the peripheral portion close to the substrate on the substrate is smaller than the vertical projection area of the end of the peripheral portion away from the substrate on the substrate.
  • the organic functional layer is at least one of an organic light emitting layer, an electron transport layer, and an electron injection layer.
  • the present application provides an organic light emitting diode display.
  • a contact hole is provided on the cathode isolation column, and a cathode is formed on the auxiliary electrode in the contact hole.
  • the cathode in the contact hole is electrically connected to the auxiliary electrode, and the cathode in the contact hole passes
  • the third opening on the side of the cathode isolation column is connected to the cathode outside the cathode isolation column to improve the problem of the resistance voltage drop of the cathode in the large-size display panel, so as to solve the large-size top-emitting display panel due to the large resistance voltage drop of the cathode.
  • the problem of brightness is provided on the cathode isolation column, and a cathode is formed on the auxiliary electrode in the contact hole.
  • the cathode in the contact hole is electrically connected to the auxiliary electrode, and the cathode in the contact hole passes
  • the third opening on the side of the cathode isolation column is connected to the ca
  • FIG. 1 is a schematic diagram of a first structure of an organic light emitting diode display according to an embodiment of the application;
  • FIG. 2 is a top view of an input electrode in the organic light emitting diode display shown in FIG. 1;
  • FIG. 3 is a top view of the cathode isolation column in the organic light emitting diode display shown in FIG. 1;
  • FIG. 4 is a schematic diagram of forming a cathode in the contact hole of the cathode separating column in FIG. 1 without forming an organic functional layer;
  • FIG. 5 is a schematic diagram of a second structure of an organic light emitting diode display according to an embodiment of the application.
  • FIG. 6 is a top view of the cathode spacer in the organic light emitting diode display shown in FIG. 5;
  • FIG. 7 is a schematic diagram of forming a cathode in the contact hole of the cathode separation column in FIG. 5 without forming an organic functional layer.
  • FIG. 1 is a schematic diagram of the first structure of an organic light emitting diode display according to an embodiment of the application.
  • the organic light emitting diode display includes a substrate 10, an auxiliary electrode, a planarization layer 11, an anode 121, a pixel definition layer 13, a cathode isolation column, an organic functional layer 15 and a cathode 16.
  • the substrate is a thin film transistor array substrate.
  • the thin film transistor array substrate includes a substrate 100 and a thin film transistor layer formed on the substrate 100.
  • the thin film transistor layer includes a plurality of thin film transistors arrayed on the substrate 100.
  • the thin film transistor is a top-gate thin film transistor. In other structural schematic diagrams, the thin film transistor may also be a bottom-gate thin film transistor.
  • a light shielding layer 101 is provided between the thin film transistor layer and the substrate 100.
  • a buffer layer 102 is provided between the thin film transistor layer and the substrate 100, and the buffer layer 102 covers the light shielding layer 101.
  • the top-gate thin film transistor includes an active layer 103 formed on the side of the buffer layer 102 away from the substrate 100, a gate insulating layer 104 formed on the side of the active layer 103 away from the substrate 100, and formed on the gate insulating layer 104
  • the gate 105 on the side away from the substrate 100 is formed on the buffer layer 102 on the side away from the substrate 100 and covers the active layer 103 and the gate 105 and the interlayer insulating layer 106 is formed on the interlayer insulating layer 106 and passes through the layer.
  • the source and drain electrodes (1071, 1072) contacting the active layer 103 with the via holes on the inter-insulating layer 106, and the source and drain electrodes (1071, 1072) are located on opposite sides of the gate 105.
  • the thin film transistor array substrate further includes a passivation layer 108 covering the thin film transistor layer.
  • the passivation layer 108 is used to prevent ions in the organic layer from entering the thin film transistor layer and affecting the electrical performance of the thin
  • the planarization layer 11 is used to level the surface of the thin film transistor array substrate.
  • the planarization layer 11 is formed on the passivation layer 108.
  • the planarization layer 11 is an organic material.
  • the thickness of the planarization layer 11 is 20,000 angstroms to 35,000 angstroms.
  • the auxiliary electrode includes an input electrode 1073 and a connecting electrode 122.
  • the connecting electrode 122 and the anode 121 are arranged in the same layer.
  • the input electrode 1073 is formed on the substrate 10, and the connecting electrode 122 and the input electrode 1073 are connected through a via on the planarization layer 11.
  • the input electrode 1073 is used to input electrical signals.
  • the electrical signal of the input electrode 1073 originates from the power input terminal of the power supply voltage (VSS), and the electrical signal is transmitted to the cathode 16 through the connecting electrode 122.
  • VSS power supply voltage
  • the input electrode 1073 can be provided in the same layer as the source and drain electrodes (1071, 1072) of the thin film transistor, can also be provided in the same layer as the light shielding layer 101, or can be provided in the same layer as the gate 105 of the bottom-gate thin film transistor. As shown in FIG. 2, it is a top view of the input electrode 1073 in the organic light emitting diode display shown in FIG. 1. When the substrate is rectangular, the input electrodes 1073 are arranged along the length of the substrate 100. In other structural schematic diagrams, the input electrodes 1073 can also be arranged along the width direction of the substrate 100, or can be arranged along the length direction and the width 100 direction of the substrate 100 at the same time to form a mesh structure.
  • the connecting electrode 122 and the anode 121 are formed by the same process.
  • the anode 121 is a reflective electrode.
  • the anode 121 is formed on the planarization layer 11 and is electrically connected to the drain electrode 1072 through the via hole on the planarization layer 11, and the electrical signal input of the anode 121 is controlled by a thin film transistor.
  • the anode 121 inputs holes to the organic light-emitting layer, and on the other hand reflects the light emitted by the organic light-emitting layer to the light-emitting direction, and its preparation materials include but are not limited to aluminum, silver or alloys thereof.
  • the pixel defining layer 13 is formed on the planarization layer 11, the auxiliary electrode, and the anode 121 and has a first opening 131 and a second opening 132.
  • the first opening 131 is disposed above the anode 121
  • the second opening 132 is disposed above the auxiliary electrode.
  • the first opening 131 partially exposes the anode 121 to define the light-emitting area of the substrate 10, and the second opening 132 partially exposes the auxiliary electrode.
  • the preparation material of the pixel definition layer 13 is any one of photoresist, polyimide, polymethyl methacrylate and phenolic resin, and the thickness of the pixel definition layer 13 is 1 ⁇ m-2 ⁇ m.
  • FIG. 3 is a top view of the cathode spacer in the organic light emitting diode display shown in FIG.
  • the cathode isolation column includes a central portion 142 and a peripheral portion 141 surrounding the central portion 142.
  • the side of the peripheral portion 141 has a third opening 141a.
  • the gap between the peripheral portion 141 and the central portion 142 forms a contact hole 143.
  • the third opening 141a may be Rectangle, trapezoid, regular figure and irregular figure etc.
  • the central portion 142 is located at the center of the peripheral portion 141.
  • the cathode isolation column is located on the auxiliary electrode in the second opening 132.
  • the cathode isolation column has a contact hole 143 and a third opening 141a.
  • the third opening 141a is located on the side of the cathode isolation column.
  • the cathode 16 in the contact hole 143 passes through the third opening 141a. It is electrically connected to the cathode 16 on the organic functional layer 15 outside the cathode isolation column in the second opening 132, so that the electrical signal input by the auxiliary electrode is input to the cathode 16.
  • the organic functional layer 15 is formed on the pixel defining layer 13, on the cathode isolation column, and on the anode 121 located in the first opening 131, and is also formed on the auxiliary electrode located at the periphery of the cathode isolation column in the second opening 132.
  • the organic functional layer 15 is formed by vacuum evaporation.
  • the organic functional layer 15 is at least one of an organic light-emitting layer, an electron transport layer, and an electron injection layer.
  • the cathode 16 is formed on the organic functional layer 15 and on the auxiliary electrode in the contact hole 143.
  • the cathode 16 is a transparent electrode or a semi-transparent electrode.
  • the preparation materials of the transparent electrode and the semi-transparent electrode include indium tin oxide and indium zinc oxide.
  • the cathode 16 is formed by vacuum evaporation.
  • FIG. 4 is a schematic diagram of forming a cathode in the contact hole of the cathode spacer in FIG. 1 without forming an organic functional layer.
  • the central part 142 is a rectangular parallelepiped, and the peripheral part 141 is a circle-shaped surrounding part with a third opening 141a on the side.
  • the vertical projection area of the end of the peripheral part 141 close to the substrate 10 on the substrate 10 is equal to the end of the peripheral part 141 away from the substrate 10 in the substrate The vertical projection area on 10.
  • the height of the central part 142 and the peripheral part 141 in the direction perpendicular to the substrate 10 are both H, and the width of the gap between the peripheral part 141 and the central part 142 in the direction parallel to the substrate 10 is D, forming the vaporization of the organic functional layer 15
  • the deposition angle is a
  • the vapor deposition angle forming the cathode 16 is b
  • the height H, width D, vapor deposition angle a, and vapor deposition angle b satisfy the following formula:
  • the value range of vapor deposition angle a is greater than or equal to 0 degrees and less than 90 degrees
  • the value range of vapor deposition angle b is greater than 0 degrees and less than vapor deposition angle a
  • the value ranges of height H and width D are both Greater than 0.
  • the cathode separator structure of the structure diagram can make the cathode 16 be formed in the contact hole 143; D/H is less than tana so that the vapor deposition angle of the organic function 15 is At the time a, the organic functional layer 15 cannot be formed in the contact hole 143 of the cathode isolation column in this structural schematic diagram.
  • a contact hole is formed through the gap between the central part and the peripheral part, and the cathode in the contact hole is electrically connected to the cathode outside the cathode isolation column on the organic functional layer in the second opening through the third opening to make the auxiliary electrode output electrical signals Output to the cathode, and the organic functional layer is not formed on the auxiliary electrode in the contact hole to prevent it from covering the auxiliary electrode in the contact hole so that the cathode cannot contact the cathode in the contact hole.
  • FIG. 5 is a schematic diagram of the second structure of the organic light emitting diode display according to the embodiment of the present application. It is basically similar to the organic light emitting diode display shown in FIG. 1, except that the cathode isolation column in FIG. 1. The cathode separator column.
  • FIG. 6 is a top view of the cathode spacer in the organic light emitting diode display shown in FIG. 5, and FIG. 7 is a cathode formed in the contact hole of the cathode spacer in FIG. 5 without forming an organic function Schematic of the layers.
  • the central part 142 is an inverted trapezoid in the direction where the anode 121 points to the substrate 10, the peripheral part 141 is a round-shaped surrounding part with a third opening 141a on the side, the height of the central part 142 in the direction perpendicular to the substrate 10 is H2, and the peripheral part
  • the height of 141 in the direction perpendicular to the substrate 10 is H3, the vertical distance from the edge of the central part 142 away from the substrate 10 to the inner wall of the peripheral part 141 in the direction parallel to the substrate 10 is D1, and the evaporation angle forming the cathode 16 is c
  • the vapor deposition angle for forming the organic functional layer 15 is d
  • the height H2, the height H3, the vertical distance D1, the vapor deposition angle c, and the vapor deposition angle d satisfy the following formula:
  • the value range of the vapor deposition angle d is greater than or equal to 0 degrees and less than 90 degrees
  • the value range of the vapor deposition angle c is greater than 0 degrees and less than the vapor deposition angle d
  • the value range of the height H2 is greater than 0
  • the height H3 The value range of is greater than the height H2
  • the value range of the vertical distance D1 is greater than 0.
  • the shape of the peripheral part is an inverted trapezoid and a surrounding part with an opening 141a on one side.
  • the vertical projection area of the end of the peripheral part 141 on the substrate 10 close to the substrate 10 is smaller than the vertical projection area of the end of the peripheral part 141 away from the substrate 10 on the substrate 10 , So that the cathode 16 can be formed on the auxiliary electrode in the second opening 132 and outside the contact hole 143, so as to further increase the contact area between the cathode and the auxiliary electrode to further improve the resistance voltage drop of the cathode in a large-size display panel.
  • the problem is an inverted trapezoid and a surrounding part with an opening 141a on one side.
  • the organic light-emitting diode display in the embodiment of the present application is provided with a contact hole on the cathode isolation column, and a cathode is formed on the auxiliary electrode in the contact hole, the cathode in the contact hole is electrically connected to the auxiliary electrode, and the cathode in the contact hole is separated by the cathode
  • the third opening on the side of the column is connected to the cathode outside the cathode isolation column to improve the resistance voltage drop problem of the cathode in a large-size display panel, so as to solve the problem of large-size top-emitting display panels that affect the light-emitting brightness due to the large resistance voltage drop of the cathode. The problem.

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Abstract

一种有机发光二极管显示器，通过在阴极隔离柱上设置接触孔（143），并使接触孔（143）中的辅助电极上形成阴极（16），接触孔（143）中的阴极（16）与辅助电极电性连接，接触孔（143）中的阴极（16）通过阴极隔离柱侧面的第三开口（141a）与阴极隔离柱之外的阴极连接（16），改善阴极在大尺寸显示面板中的电阻压降问题。

Description

有机发光二极管显示器 技术领域
本申请涉及显示技术领域，尤其涉及一种有机发光二极管显示器。
 背景技术
目前，有机发光二极管（Organic Light Emitting Diode，OLED）显示器包括顶发光（Top Emission）、底发光（Bottom Emission）以及透明显示（Transparent Display）等几种发光方式。其中，顶发光型OLED显示器具有分辨率高以及发光面积大的优点，广泛地被应用于小尺寸OLED显示面板。由于大尺寸显示面板具有提高分辨率的趋势，顶发光型显示面板成为大尺寸显示面板的重要研究方向。顶发光显示面板制造为大尺寸显示面板时要求阴极材料透明且阴极的厚度不能太大，以保证OLED显示面板出光率。由于透明阴极的厚度较薄且阴极材料的阻抗大，在顶发光型显示面板制造为大尺寸显示面板时会出现透明电极压降（IR Drop）过大，从而影响显示面板发光亮度的问题。
因此，有必要提出一种技术方案以解决顶发光型显示面板制造为大尺寸显示面板时由于阴极压降过大而影响显示面板发光亮度的问题。
 技术问题
本申请的目的在于提供一种有机发光二极管显示器，以解决顶发光型显示面板制造为大尺寸显示面板时由于阴极压降过大而影响显示面板发光亮度的问题。
 技术解决方案
一种有机发光二极管显示器，所述有机发光二极管显示器包括：
基板；
于所述基板上形成的辅助电极；
于所述基板上形成的平坦化层；
于所述平坦化层上形成的阳极；
于所述平坦化层、所述辅助电极以及所述阳极上形成且具有第一开口和第二开口的像素定义层，所述第一开口设置于所述阳极上方，所述第二开口设置于所述辅助电极上方；
于位于所述第二开口中的所述辅助电极上形成的阴极隔离柱，所述阴极隔离柱具有接触孔以及第三开口，所述第三开口位于所述阴极隔离柱的侧面；
于所述像素定义层上、所述阴极隔离柱上以及位于所述第一开口中的所述阳极上形成的有机功能层；
于所述有机功能层上以及位于所述接触孔内的所述辅助电极上形成的阴极；
所述辅助电极包括输入电极以及连接电极，所述连接电极与所述阳极同层设置，所述输入电极形成于所述基板上，所述连接电极与所述输入电极通过所述平坦化层上的过孔连接。
在上述有机发光二极管显示器中，所述阴极隔离柱包括中心部以及环绕所述中心部的外围部，所述外围部的侧面具有所述第三开口，所述外围部和所述中心部之间的间隙形成所述接触孔。
在上述有机发光二极管显示器中，所述中心部位于所述外围部的中心位置。
在上述有机发光二极管显示器中，所述有机功能层和所述阴极是通过真空蒸镀形成。
在上述有机发光二极管显示器中，所述中心部为长方体，所述外围部为侧面具有所述第三开口的回字型环绕部，所述中心部和所述外围部在垂直于所述基板方向上的高度均为H，所述外围部和所述中心部之间的间隙在平行所述基板方向上的宽度为D，形成所述有机功能层的蒸镀角为a、形成所述阴极的蒸镀角为b，所述高度H、所述宽度D、所述蒸镀角a以及所述蒸镀角b满足如下公式：
tanb<D/H<tana  ；
其中，所述蒸镀角a的取值范围大于或等于0度且小于90度，所述蒸镀角b的取值范围为大于0度且小于所述蒸镀角a，所述高度H和所述宽度D的取值范围均为大于0。
在上述有机发光二极管显示器中，所述中心部在所述阳极指向所述基板的方向上为倒梯形部，所述外围部为侧面具有所述第三开口的回字型环绕部，所述中心部在垂直于所述基板方向上的高度为H2，所述外围部在垂直于所述基板方向上的高度为H3，所述中心部远离所述基板的一端边缘在平行于所述基板方向上到所述外围部的内壁的垂直距离为D1，形成所述有机功能层的蒸镀角为d，形成所述阴极的蒸镀角为c，所述高度H2、所述高度H3、所述垂直距离D1、所述蒸镀角c以及所述蒸镀角d满足如下公式：
tanc<D1/(H3-H2)<tand ；
其中，所述蒸镀角d的取值范围为大于或等于0度且小于90度，所述蒸镀角c的取值范围为大于0度且小于所述蒸镀角d，所述高度H2的取值范围为大于0，所述高度H3的取值范围为大于所述高度H2，所述垂直距离D1的取值范围为大于0。
在上述有机发光二极管显示器中，所述外围部靠近所述基板的一端在所述基板上的垂直投影面积小于或等于所述外围部远离所述基板的一端在所述基板上的垂直投影面积。
在上述有机发光二极管显示器中，所述外围部靠近所述基板的一端在所述基板上的垂直投影面积小于所述外围部远离所述基板的一端在所述基板上的垂直投影面积。
在上述有机发光二极管显示器中，所述有机功能层为有机发光层、电子传输层以及电子注入层中的至少一种。
一种有机发光二极管显示器，所述有机发光二极管显示器包括：
基板；
于所述基板上形成的辅助电极；
于所述基板上形成的平坦化层；
于所述平坦化层上形成的阳极；
于所述平坦化层、所述辅助电极以及所述阳极上形成且具有第一开口和第二开口的像素定义层，所述第一开口设置于所述阳极上方，所述第二开口设置于辅助电极上方；
于所述第二开口中的所述辅助电极上形成的阴极隔离柱，所述阴极隔离柱具有接触孔以及第三开口，所述第三开口位于所述阴极隔离柱的侧面；
于所述像素定义层上、所述阴极隔离柱上以及位于所述第一开口中的阳极上形成的有机功能层；
于所述有机功能层上以及位于所述接触孔内的所述辅助电极上形成的阴极。
在上述有机发光二极管显示器中，所述阴极隔离柱包括中心部以及环绕所述中心部的外围部，所述外围部的侧面具有所述第三开口，所述外围部和所述中心部之间的间隙形成所述接触孔。
在上述有机发光二极管显示器中，所述中心部位于所述外围部的中心位置。
在上述有机发光二极管显示器中，所述有机功能层和所述阴极是通过真空蒸镀形成。
在上述有机发光二极管显示器中，所述中心部为长方体，所述外围部为侧面具有所述第三开口的回字型环绕部，所述中心部和所述外围部在垂直于所述基板方向上的高度均为H，所述外围部和所述中心部之间的间隙在平行所述基板方向上的宽度为D，形成所述有机功能层的蒸镀角为a、形成所述阴极的蒸镀角为b，所述高度H、所述宽度D、所述蒸镀角a以及所述蒸镀角b满足如下公式：
tanb<D/H<tana  ；
其中，所述蒸镀角a的取值范围大于或等于0度且小于90度，所述蒸镀角b的取值范围为大于0度且小于所述蒸镀角a，所述高度H和所述D的取值范围均为大于0。
在上述有机发光二极管显示器中，所述中心部在所述阳极指向所述基板的方向上为倒梯形部，所述外围部为侧面具有所述第三开口的回字型环绕部，所述中心部在垂直于所述基板方向上的高度为H2，所述外围部在垂直于所述基板方向上的高度为H3，所述中心部远离所述基板的一端边缘在平行于所述基板方向上到所述外围部的内壁的垂直距离为D1，形成所述有机功能层的蒸镀角为d，形成所述阴极的蒸镀角为c，所述高度H2、所述高度H3、所述垂直距离D1、所述蒸镀角c以及所述蒸镀角d满足如下公式：
tanc<D1/(H3-H2)<tand ；
其中，所述蒸镀角d的取值范围为大于或等于0度且小于90度，所述蒸镀角c的取值范围为大于0度且小于所述蒸镀角d，所述高度H2的取值范围为大于0，所述高度H3的取值范围为大于所述高度H2，所述垂直距离D1的取值范围为大于0。
在上述有机发光二极管显示器中，所述外围部靠近所述基板的一端在所述基板上的垂直投影面积小于或等于所述外围部远离所述基板的一端在所述基板上的垂直投影面积。
在上述有机发光二极管显示器中，所述外围部靠近所述基板的一端在所述基板上的垂直投影面积小于所述外围部远离所述基板的一端在所述基板上的垂直投影面积。
在上述有机发光二极管显示器中，所述有机功能层为有机发光层、电子传输层以及电子注入层中的至少一种。
 有益效果
本申请提供一种有机发光二极管显示器，通过在阴极隔离柱上设置接触孔，并使接触孔中的辅助电极上形成阴极，接触孔中的阴极与辅助电极电性连接，接触孔中的阴极通过阴极隔离柱侧面的第三开口与阴极隔离柱之外的阴极连接，改善阴极在大尺寸显示面板中的电阻压降问题，以解决大尺寸顶发光型显示面板由于阴极的电阻压降大而影响发光亮度的问题。
 附图说明
图1为本申请实施例有机发光二极管显示器的第一种结构示意图；
图2为图1所示有机发光二极管显示中输入电极的俯视图；
图3为图1所示有机发光二极管显示器中阴极隔离柱的俯视图；
图4为图1中阴极隔离柱的接触孔中形成阴极而不形成有机功能层的示意图；
图5为本申请实施例有机发光二极管显示器的第二种结构示意图；
图6为图5所示有机发光二极管显示器中阴极隔离柱的俯视图；
图7为图5中阴极隔离柱的接触孔中形成阴极而不形成有机功能层的示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请参阅图1，其为本申请实施例有机发光二极管显示器的第一种结构示意图。有机发光二极管显示器包括基板10、辅助电极、平坦化层11、阳极121、像素定义层13、阴极隔离柱、有机功能层15以及阴极16。
基板为薄膜晶体管阵列基板，薄膜晶体管阵列基板包括衬底100以及于衬底100上形成的薄膜晶体管层，薄膜晶体管层包括多个阵列设置于衬底100的薄膜晶体管。薄膜晶体管为顶栅型薄膜晶体管。在其他结构示意图中，薄膜晶体管也可以为底栅型薄膜晶体管。为了避免顶栅型薄膜晶体管中的有源层由于受背光影响而产生载流子而影响薄膜晶体管的电性能，薄膜晶体管层与衬底100之间设置有遮光层101。为了避免衬底100中的杂质离子进入薄膜晶体管中而影响薄膜晶体管的电性能，薄膜晶体管层与衬底100之间设置有缓冲层102，该缓冲层102覆盖遮光层101。顶栅型薄膜晶体管包括形成于缓冲层102上远离衬底100一侧的有源层103，形成于有源层103远离衬底100一侧的栅极绝缘层104，形成于栅极绝缘层104远离衬底100一侧的栅极105，形成于缓冲层102远离衬底100一侧且覆盖有源层103以及栅极105的层间绝缘层106以及形成于层间绝缘层106上且通过层间绝缘层106上的过孔与有源层103接触的源漏电极（1071，1072），源漏电极（1071，1072）位于栅极105相对的两侧。薄膜晶体管阵列基板还包括覆盖薄膜晶体管层的钝化层108，钝化层108用于避免有机层中的离子进入薄膜晶体管层而影响薄膜晶体管的电性能。
平坦化层11用于使薄膜晶体管阵列基板的表面平整。平坦化层11形成于钝化层108上。平坦化层11为有机材料。平坦化层11的厚度为20000埃-35000埃。
辅助电极包括输入电极1073以及连接电极122，连接电极122与阳极121同层设置，输入电极1073形成于基板10上，连接电极122与输入电极1073通过平坦化层11上的过孔连接。输入电极1073用于输入电信号，输入电极1073的电信号起源于电源电压（VSS）的电源输入端，通过连接电极122将电信号传输到阴极16。输入电极1073可以与薄膜晶体管的源漏电极（1071，1072）同层设置，也可以与遮光层101同层设置，也可以与底栅型薄膜晶体管中的栅极105同层设置。如图2所示，其为图1所示有机发光二极管显示器中的输入电极1073的俯视图，衬底为矩形时，输入电极1073沿衬底100长度方向排列。在其他结构示意图中，输入电极1073也沿可以衬底100的宽度方向排列，也可以同时沿着衬底100长度方向和宽度100方向排列以形成网状结构。连接电极122与阳极121通过同一制程形成。
阳极121为反射电极。阳极121形成于平坦化层11上且通过平坦化层11上的过孔与漏电极1072电性连接，通过薄膜晶体管以控制阳极121的电信号输入。一方面阳极121向有机发光层输入空穴，另一方面将有机发光层发出的光反射至出光方向，其制备材料包括但不限于铝、银或其合金。
像素定义层13形成于平坦化层11、辅助电极以及阳极121上且具有第一开口131和第二开口132，第一开口131设置于阳极121上方，第二开口132设置于辅助电极的上方。第一开口131使阳极121部分显露以定义基板10的发光区，第二开口132使辅助电极部分显露。像素定义层13的制备材料为光刻胶、聚酰亚胺、聚甲基丙烯酸甲酯以及酚醛树脂中的任意一种，像素定义层13的厚度为1微米-2微米。
请结合图1和图3所示，图3为图1所示有机发光二极管显示器中阴极隔离柱的俯视图。阴极隔离柱包括中心部142以及环绕中心部142的外围部141，外围部141的侧面具有第三开口141a，外围部141和中心部142之间的间隙形成接触孔143，第三开口141a可以为矩形、梯形、规则图形以及不规则图形等。中心部142位于外围部141的中心位置。阴极隔离柱位于第二开口132中的辅助电极上，阴极隔离柱具有接触孔143以及第三开口141a，第三开口141a位于阴极隔离柱的侧面，接触孔143中的阴极16通过第三开口141a与第二开口132中阴极隔离柱之外的有机功能层15上的阴极16电性连接，以使辅助电极输入的电信号输入至阴极16。
有机功能层15形成于像素定义层13上、阴极隔离柱上以及位于第一开口131中的阳极121上，还形成于位于第二开口132中的阴极隔离柱外围的辅助电极上。有机功能层15是通过真空蒸镀形成。有机功能层15为有机发光层、电子传输层以及电子注入层中的至少一种。
阴极16形成于有机功能层15上以及接触孔143内的辅助电极上。阴极16为透明电极或半透明电极。透明电极以及半透明电极的制备材料包括氧化铟锡以及氧化铟锌等。阴极16通过真空蒸镀形成。
请结合图1、图3和图4，图4为图1中阴极隔离柱的接触孔中形成阴极而不形成有机功能层的示意图。中心部142为长方体，外围部141为侧面具有第三开口141a的回字型环绕部，外围部141靠近基板10的一端在基板10上的垂直投影面积等于外围部141远离基板10的一端在基板10上的垂直投影面积。中心部142和外围部141在垂直于基板10方向上的高度均为H，外围部141和中心部142之间的间隙在平行于基板10方向上的宽度为D，形成有机功能层15的蒸镀角为a，形成阴极16的蒸镀角为b，高度H、宽度D、蒸镀角a以及蒸镀角b满足如下公式：
tanb<D/H<tana  ；
其中，蒸镀角a的取值范围大于或等于0度且小于90度，蒸镀角b的取值范围为大于0度且小于蒸镀角a，高度H和宽度D的取值范围均为大于0。
由于D/H大于tanb使得形成阴极的蒸镀角为b时配合本结构示意图的阴极隔离柱结构可以使阴极16形成于接触孔143内；D/H小于tana使得有机功能15的蒸镀角为a时无法在本结构示意图的阴极隔离柱的接触孔143内形成有机功能层15。
通过中心部以及外围部之间的间隙形成接触孔，接触孔内的阴极通过第三开口与第二开口中有机功能层上阴极隔离柱之外的阴极电性连接以使得辅助电极输出的电信号输出至阴极，有机功能层不形成于接触孔中的辅助电极上以避免其覆盖接触孔中的辅助电极而导致阴极无法与接触孔中的阴极接触。
请参阅图5，其为本申请实施例有机发光二极管显示器的第二种结构示意图，其与图1所示有机发光二极管显示器基本相似，不同之处在于，图5中的阴极隔离柱不同于图1中的阴极隔离柱。
请参阅图5、图6以及图7，图6为图5所示有机发光二极管显示器中的阴极隔离柱的俯视图，图7为图5中阴极隔离柱的接触孔中形成阴极而不形成有机功能层的示意图。中心部142在阳极121指向基板10方向上为倒梯形部，外围部141为侧面具有第三开口141a的回字型环绕部，中心部142在垂直于基板10方向上的高度为H2，外围部141在垂直于基板10方向上的高度为H3，中心部142远离基板10的一端边缘在平行于基板10方向上到外围部141的内壁的垂直距离为D1，形成阴极16的蒸镀角为c，形成有机功能层15的蒸镀角为d，高度H2、高度H3、垂直距离D1、蒸镀角c以及蒸镀角d满足如下公式：
tanc<D1/(H3-H2)<tand ；
其中，蒸镀角d的取值范围大于或等于0度且小于90度，蒸镀角c的取值范围大于0度且小于蒸镀角d，高度H2的取值范围为大于0，高度H3的取值范围为大于高度H2，垂直距离D1的取值范围为大于0。
由于D1/(H3-H2)大于tanc使得形成阴极的蒸镀角为c时配合本结构示意图的阴极隔离柱结构可以使阴极16形成于接触孔143内；D1/(H3-H2)小于tand使得有机功能15的蒸镀角为d无法在本结构示意图的阴极隔离柱的接触孔143内形成有机功能层15。
外围部的形状为倒梯形且一侧具有开口141a的环绕部，外围部141靠近基板10的一端在基板10上的垂直投影面积小于外围部141远离基板10的一端在基板10上的垂直投影面积，以使得在第二开口132中且接触孔143之外的辅助电极上能形成阴极16，以进一步地增加阴极与辅助电极的接触面积从而进一步地改善阴极在大尺寸显示面板中存在电阻压降的问题。
本申请实施例有机发光二极管显示器通过在阴极隔离柱上设置接触孔，并使接触孔中的辅助电极上形成阴极，接触孔中的阴极与辅助电极电性连接，接触孔中的阴极通过阴极隔离柱侧面的第三开口与阴极隔离柱之外的阴极连接，改善阴极在大尺寸显示面板中的电阻压降问题，以解决大尺寸顶发光型显示面板由于阴极的电阻压降大而影响发光亮度的问题。
以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (18)

  1. 一种有机发光二极管显示器，其中，所述有机发光二极管显示器包括：
    基板；
    于所述基板上形成的辅助电极；
    于所述基板上形成的平坦化层；
    于所述平坦化层上形成的阳极；
    于所述平坦化层、所述辅助电极以及所述阳极上形成且具有第一开口和第二开口的像素定义层，所述第一开口设置于所述阳极上方，所述第二开口设置于所述辅助电极上方；
    于位于所述第二开口中的所述辅助电极上形成的阴极隔离柱，所述阴极隔离柱具有接触孔以及第三开口，所述第三开口位于所述阴极隔离柱的侧面；
    于所述像素定义层上、所述阴极隔离柱上以及位于所述第一开口中的所述阳极上形成的有机功能层；
    于所述有机功能层上以及位于所述接触孔内的所述辅助电极上形成的阴极；
    所述辅助电极包括输入电极以及连接电极，所述连接电极与所述阳极同层设置，所述输入电极形成于所述基板上，所述连接电极与所述输入电极通过所述平坦化层上的过孔连接。
  2. 根据权利要求1所述的有机发光二极管显示器，其中，所述阴极隔离柱包括中心部以及环绕所述中心部的外围部，所述外围部的侧面具有所述第三开口，所述外围部和所述中心部之间的间隙形成所述接触孔。
  3. 根据权利要求2所述的有机发光二极管显示器，其中，所述中心部位于所述外围部的中心位置。
  4. 根据权利要求3所述的有机发光二极管显示器，其中，所述有机功能层和所述阴极是通过真空蒸镀形成。
  5. 根据权利要求4所述的有机发光二极管显示器，其中，所述中心部为长方体，所述外围部为侧面具有所述第三开口的回字型环绕部，所述中心部和所述外围部在垂直于所述基板方向上的高度均为H，所述外围部和所述中心部之间的间隙在平行所述基板方向上的宽度为D，形成所述有机功能层的蒸镀角为a、形成所述阴极的蒸镀角为b，所述高度H、所述宽度D、所述蒸镀角a以及所述蒸镀角b满足如下公式：
    tanb<D/H<tana  ；
    其中，所述蒸镀角a的取值范围大于或等于0度且小于90度，所述蒸镀角b的取值范围为大于0度且小于所述蒸镀角a，所述高度H和所述宽度D的取值范围均为大于0。
  6. 根据权利要求4所述的有机发光二极管显示器，其中，所述中心部在所述阳极指向所述基板的方向上为倒梯形部，所述外围部为侧面具有所述第三开口的回字型环绕部，所述中心部在垂直于所述基板方向上的高度为H2，所述外围部在垂直于所述基板方向上的高度为H3，所述中心部远离所述基板的一端边缘在平行于所述基板方向上到所述外围部的内壁的垂直距离为D1，形成所述有机功能层的蒸镀角为d，形成所述阴极的蒸镀角为c，所述高度H2、所述高度H3、所述垂直距离D1、所述蒸镀角c以及所述蒸镀角d满足如下公式：
    tanc<D1/(H3-H2)<tand ；
    其中，所述蒸镀角d的取值范围为大于或等于0度且小于90度，所述蒸镀角c的取值范围为大于0度且小于所述蒸镀角d，所述高度H2的取值范围为大于0，所述高度H3的取值范围为大于所述高度H2，所述垂直距离D1的取值范围为大于0。
  7. 根据权利要求2所述的有机发光二极管显示器，其中，所述外围部靠近所述基板的一端在所述基板上的垂直投影面积小于或等于所述外围部远离所述基板的一端在所述基板上的垂直投影面积。
  8. 根据权利要求7所述的有机发光二极管显示器，其中，所述外围部靠近所述基板的一端在所述基板上的垂直投影面积小于所述外围部远离所述基板的一端在所述基板上的垂直投影面积。
  9. 根据权利要求1所述的有机发光二极管显示器，其中，所述有机功能层为有机发光层、电子传输层以及电子注入层中的至少一种。
  10. 一种有机发光二极管显示器，其中，所述有机发光二极管显示器包括：
    基板；
    于所述基板上形成的辅助电极；
    于所述基板上形成的平坦化层；
    于所述平坦化层上形成的阳极；
    于所述平坦化层、所述辅助电极以及所述阳极上形成且具有第一开口和第二开口的像素定义层，所述第一开口设置于所述阳极上方，所述第二开口设置于所述辅助电极上方；
    于位于所述第二开口中的所述辅助电极上形成的阴极隔离柱，所述阴极隔离柱具有接触孔以及第三开口，所述第三开口位于所述阴极隔离柱的侧面；
    于所述像素定义层上、所述阴极隔离柱上以及位于所述第一开口中的所述阳极上形成的有机功能层；
    于所述有机功能层上以及位于所述接触孔内的所述辅助电极上形成的阴极。
  11. 根据权利要求10所述的有机发光二极管显示器，其中，所述阴极隔离柱包括中心部以及环绕所述中心部的外围部，所述外围部的侧面具有所述第三开口，所述外围部和所述中心部之间的间隙形成所述接触孔。
  12. 根据权利要求11所述的有机发光二极管显示器，其中，所述中心部位于所述外围部的中心位置。
  13. 根据权利要求12所述的有机发光二极管显示器，其中，所述有机功能层和所述阴极是通过真空蒸镀形成。
  14. 根据权利要求13所述的有机发光二极管显示器，其中，所述中心部为长方体，所述外围部为侧面具有所述第三开口的回字型环绕部，所述中心部和所述外围部在垂直于所述基板方向上的高度均为H，所述外围部和所述中心部之间的间隙在平行所述基板方向上的宽度为D，形成所述有机功能层的蒸镀角为a、形成所述阴极的蒸镀角为b，所述高度H、所述宽度D、所述蒸镀角a以及所述蒸镀角b满足如下公式：
    tanb<D/H<tana  ；
    其中，所述蒸镀角a的取值范围大于或等于0度且小于90度，所述蒸镀角b的取值范围为大于0度且小于所述蒸镀角a，所述高度H和所述宽度D的取值范围均为大于0。
  15. 根据权利要求13所述的有机发光二极管显示器，其中，所述中心部在所述阳极指向所述基板的方向上为倒梯形部，所述外围部为侧面具有所述第三开口的回字型环绕部，所述中心部在垂直于所述基板方向上的高度为H2，所述外围部在垂直于所述基板方向上的高度为H3，所述中心部远离所述基板的一端边缘在平行于所述基板方向上到所述外围部的内壁的垂直距离为D1，形成所述有机功能层的蒸镀角为d，形成所述阴极的蒸镀角为c，所述高度H2、所述高度H3、所述垂直距离D1、所述蒸镀角c以及所述蒸镀角d满足如下公式：
    tanc<D1/(H3-H2)<tand ；
    其中，所述蒸镀角d的取值范围为大于或等于0度且小于90度，所述蒸镀角c的取值范围为大于0度且小于所述蒸镀角d，所述高度H2的取值范围为大于0，所述高度H3的取值范围为大于所述高度H2，所述垂直距离D1的取值范围为大于0。
  16. 根据权利要求11所述的有机发光二极管显示器，其中，所述外围部靠近所述基板的一端在所述基板上的垂直投影面积小于或等于所述外围部远离所述基板的一端在所述基板上的垂直投影面积。
  17. 根据权利要求16所述的有机发光二极管显示器，其中，所述外围部靠近所述基板的一端在所述基板上的垂直投影面积小于所述外围部远离所述基板的一端在所述基板上的垂直投影面积。
  18. 根据权利要求10所述的有机发光二极管显示器，其中，所述有机功能层为有机发光层、电子传输层以及电子注入层中的至少一种。
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CN112331801B (zh) * 2020-10-30 2023-11-28 合肥鑫晟光电科技有限公司 一种显示面板及其制备方法和显示装置
CN113097257A (zh) * 2021-03-22 2021-07-09 深圳市华星光电半导体显示技术有限公司 显示面板
WO2022222078A1 (zh) * 2021-04-21 2022-10-27 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN113345945B (zh) * 2021-05-31 2022-12-23 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法、显示装置
CN113471384A (zh) * 2021-06-29 2021-10-01 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
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CN117529977A (zh) * 2022-06-02 2024-02-06 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
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