WO2020258511A1 - 湿式蚀刻方法及装置 - Google Patents

湿式蚀刻方法及装置 Download PDF

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Publication number
WO2020258511A1
WO2020258511A1 PCT/CN2019/103913 CN2019103913W WO2020258511A1 WO 2020258511 A1 WO2020258511 A1 WO 2020258511A1 CN 2019103913 W CN2019103913 W CN 2019103913W WO 2020258511 A1 WO2020258511 A1 WO 2020258511A1
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Prior art keywords
etched
line segment
wet etching
conveyor belt
etching method
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PCT/CN2019/103913
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English (en)
French (fr)
Inventor
梅园
吴豪旭
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Publication of WO2020258511A1 publication Critical patent/WO2020258511A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Definitions

  • the present invention relates to a wet etching method and device, in particular to a wet etching method and device for the orientation of a piece to be etched.
  • the etching solution is usually sprayed downward to the objects on the conveyor belt in a spray mode.
  • the layer of etching solution accumulated on the glass surface will buffer the spray fluid to a certain extent, thereby reducing the mass transfer convection generated by the spray pressure, and reducing the etching efficiency to a certain extent;
  • the etching liquid will gradually converge from the higher side of the glass to the lower side under the action of gravity.
  • the flow of the etching liquid if the direction of the photoresist on the glass surface and the flow direction of the etching liquid are parallel or perpendicular to each other, This will lead to extreme conditions of the etching liquid flow rate, which will cause different accumulation of etching liquid in different parts of the glass, resulting in uneven etching.
  • the invention provides a wet etching method and device to avoid the problem of uneven etching degree in the prior art.
  • One aspect of the present invention provides a wet etching method, including the steps of: providing a wet etching configuration, the wet etching configuration includes a conveyor belt, the conveyor belt is used to transport objects along a conveying direction from a higher upstream end To a lower downstream end, there is a liquid spray device above the conveyor belt; the conveyor belt has an inclination angle with respect to a horizontal plane between the upstream end and the downstream end, and the inclination angle is 5 degrees Providing a part to be etched, the part to be etched has a photoresist pattern, the photoresist pattern has at least one line segment, and the at least one line segment extends along at least a straight line; the part to be etched is also There is at least one deposition layer and a base layer, the at least one deposition layer is located on the base layer, and the photoresist pattern is located on the at least one deposition layer; the object to be etched is placed on the On the conveyor belt, and cause an angle between the straight line direction extending
  • the included angle is between 40 and 50 degrees.
  • the included angle is 45 degrees.
  • the photoresist pattern has at least one first line segment and at least one second line segment, the first line segment extends along a first straight line direction, and the second line segment It extends along a second straight line direction, and the first straight line direction and the second straight line direction are perpendicular to each other.
  • the numbers of the first line segment and the second line segment are respectively several, and at least one of the first line segments and at least one of the second line segments One is interconnected.
  • the object to be etched is a glass product used to make a display panel.
  • Another aspect of the present invention provides a wet etching method, including the steps of: providing a wet etching configuration, the wet etching configuration includes a conveyor belt for conveying from a higher upstream end along a conveying direction The object reaches a lower downstream end, and a liquid spray device is provided above the conveyor belt; an object to be etched is provided, the object to be etched has a photoresist pattern, and the photoresist pattern has at least one line segment , The at least one line segment extends along at least a straight line direction; the object to be etched is placed on the conveyor belt, and an angle between the linear direction in which the line segment extends and the conveying direction is caused At 30 to 60 degrees; and controlling the conveyor belt to transport the object to be etched, and the liquid spray device sprays the etching liquid downward.
  • the included angle is between 40 and 50 degrees.
  • the included angle is 45 degrees.
  • the photoresist pattern has at least one first line segment and at least one second line segment, the first line segment extends along a first straight line direction, and the second line segment It extends along a second straight line direction, and the first straight line direction and the second straight line direction are perpendicular to each other.
  • the numbers of the first line segment and the second line segment are respectively several, and at least one of the first line segments and at least one of the second line segments One is interconnected.
  • the object to be etched further has at least one deposition layer and a base layer, the at least one deposition layer is located on the base layer, and the photoresist pattern is located on the On at least one deposited layer.
  • the object to be etched is a glass product used to make a display panel.
  • the conveyor belt has an inclination angle with respect to a horizontal plane between the upstream end and the downstream end, and the inclination angle is 5 degrees.
  • a wet etching device including: a conveyor belt for conveying a piece to be etched from a higher upstream end to a lower downstream end in a conveying direction; and a liquid spray device , Located above the conveyor belt, for spraying etching liquid downward to the part to be etched between the upstream end and the downstream end; and an electronic control component, including a motor, a controller, and A camera, the controller is electrically connected to the motor and the camera, the motor is configured to drive the conveyor belt, and the camera is directed to pass through the object to be etched at the upstream end to capture at least one pattern image , The controller controls the operation of the motor according to the pattern image.
  • the controller analyzes at least a straight line direction in which at least one line segment extends according to the pattern image, and determines whether an included angle between the straight line direction and the conveying direction is between 30 and 60 degrees, if the judgment is yes, the controller generates a start signal to the motor; if the judgment is no, the controller generates a disable signal to the motor.
  • the wet etching method and device of the present invention rotate the part to be etched on the conveyor belt at an angle of less than 90 degrees, for example, causing the line segments of the photoresist pattern
  • An included angle between the extending straight line direction and the conveying direction is between 30 and 60 degrees.
  • FIG. 1 is a schematic side view of the etching process performed by the wet etching apparatus of the present invention.
  • FIG. 2 is a schematic top view showing a photoresist pattern on an upper surface of an object to be etched.
  • Fig. 3 is a schematic diagram of the aluminum phosphate concentration in the etching process in the tilt mode.
  • FIG. 4 is a schematic diagram of the angle between at least a straight line direction extending at least one line segment and a conveying direction of the photoresist pattern of the object to be etched according to the present invention.
  • FIG. 5 is a schematic diagram of the connection of the components of the wet etching apparatus of the present invention with an electronic control assembly.
  • the wet etching device in one aspect of the present invention may include: a conveyor belt C and a liquid spray device D.
  • the conveyor belt C may be composed of an automated conveying module for transferring a part to be etched G( For example, substrates such as glass) are conveyed from a higher upstream end C1 to a lower downstream end C2 along a conveying direction E.
  • the conveying belt C has between the upstream end C1 and the downstream end C2.
  • the inclination angle ⁇ 1 may be between 4 and 6 degrees, for example, 5 degrees; the liquid spray device D is arranged above the conveyor belt C for spraying along a The etching liquid is sprayed downward in the liquid direction P to the to-be-etched part G between the upstream end C1 and the downstream end C2.
  • the following examples illustrate the implementation of the object G to be etched in the present invention, but it is not limited thereto.
  • a photoresist pattern R may be provided on an upper surface of the part G to be etched.
  • the photoresist pattern R may be a photoresist ( PR) is formed.
  • the photoresist pattern R has at least one line segment for forming a circuit layout, etc., and the at least one line segment extends in at least a straight line direction.
  • the part G to be etched further has at least one deposition layer M1 and a base layer M2, the at least one deposition layer M1 is located on the base layer M2, and the light The resist pattern R is located on the at least one deposition layer M1.
  • the etching liquid falling from the liquid spray device D will be affected by gravity and gradually move toward the The downstream end C2 converges.
  • the etching liquid flows to the downstream end C2
  • the etching liquid is in the area B where the part G to be etched, the area A1 before the part G to be etched, and the area A1 behind the part G to be etched.
  • the resistance to area A2 will be different.
  • the following examples discuss the influence of the placement orientation of the object G to be etched on the etching solution.
  • the photoresist pattern R may have at least one line segment, and the at least one line segment extends along at least a straight line, for example: at least one first line segment R1 is along a first straight line.
  • the line direction X (such as the lateral direction in FIG. 2) extends, and at least one second line segment R2 extends along a second linear direction Y (such as the longitudinal direction in FIG. 2).
  • the first linear direction X and the The second straight line directions Y are perpendicular to each other.
  • the number of the first line segment R1 and the second line segment R2 may be several respectively, and at least one of the first line segments R1 is connected to the first line segment R1. At least one of the two line segments R2 is connected to each other.
  • the first line segment R1 extending along the first linear direction X (parallel to the conveying direction E) has the least resistance to the etching solution, which will cause the etching solution to stay too short; along the second linear direction Y( The second line segment R2 extending perpendicular to the conveying direction E) has the greatest resistance to the etching solution, which will cause the etching solution to stay for too long, so uneven etching will be extremely obvious.
  • the aluminum phosphate (AlPO 4 ) concentration during the etching process of a glass substrate with a width of 2200 millimeters (mm) at an inclination angle of 5 degrees is monitored, the aluminum phosphate at the top of the glass can be found
  • the concentration of (AlPO 4 ) also decreases faster than the middle and bottom.
  • the concentration of AlPO 4 is reduced from 1.6 to 0.2, and the top/middle/bottom ends respectively need to pass through the diffusion layer of 10 ⁇ m/28 ⁇ m/38 ⁇ m, which will have a thickness difference ⁇ .
  • the included angle can be selected It is 45 degrees.
  • the resistance received by the etching solution can be moderate, which is beneficial to the level of etching.
  • the above-mentioned angle can be selected in a mechanized manner, for example: a robotic arm or a rotating platform causes the to-be-etched part G to rotate at the above angle on the conveyor belt C, and then The object G to be etched is moved along the conveying direction E to facilitate the average etching degree.
  • the above-mentioned wet etching apparatus embodiment may further include an electronic control component, for example: the electronic control component may include a motor 1. , A controller 2 and a camera 3, the controller 2 is electrically connected to the motor 1 and the camera 3, the motor 1 can be configured to drive the conveyor belt C, and the camera 3 can be configured In order to capture at least one pattern image (as shown in FIG. 4) through the to-be-etched part G at the upstream end C1, the controller 2 may be configured to control the motor 1 to act according to the pattern image .
  • the electronic control component may include a motor 1.
  • the controller 2 is electrically connected to the motor 1 and the camera 3
  • the motor 1 can be configured to drive the conveyor belt C
  • the camera 3 can be configured
  • the controller 2 may be configured to control the motor 1 to act according to the pattern image .
  • the controller 2 may be configured to analyze the at least linear direction of the extension of at least one line segment according to the pattern image, for example: use edge image processing technology to detect the extension of the line segment (such as R1, R2) To determine whether the angle between the linear direction (such as X, Y) and the conveying direction E (such as ⁇ 2 or ⁇ 3 ) is between 30 and 60 degrees.
  • the controller 2 may be configured to generate a start signal to the motor 1 to drive the conveyor belt C; if the determination is no, the controller 2 generates a disable signal to the motor 1 to stop The conveyor belt C is activated; optionally, the controller 2 can also generate a prompt message (for example, text or audio-visual information, etc.) according to the disable signal to prompt the workpiece G to be etched to be moved Wait.
  • a prompt message for example, text or audio-visual information, etc.
  • a wet etching method may include the steps of: providing a wet etching configuration (as shown in FIG.
  • the configuration may include a conveyor belt C, which is used to transport objects along a conveying direction E from a higher upstream end C1 to a lower downstream end C2, and a liquid spray device is provided above the conveyor belt C D;
  • a part G to be etched the part G to be etched has a photoresist pattern R, the photoresist pattern R has at least one line segment (such as R1, R2), the at least one line segment along at least Extending in a straight line direction (such as X, Y); placing the to-be-etched part G on the conveyor belt C and causing the line segment (such as R1, R2) to extend in the straight line direction (such as X, Y)
  • An included angle (such as ⁇ 2 or ⁇ 3 ) with the conveying direction E is between 30 and 60 degrees; and the conveyor belt C is controlled to convey the object G to be etched, and the liquid spray device D is directed The etching solution is sprayed downward.
  • the object G to be etched has a photores
  • the wet etching method and device of the present invention rotate the part to be etched on the conveyor belt at an angle of less than 90 degrees, for example, causing the line segments of the photoresist pattern
  • An included angle between the extending straight line direction and the conveying direction is between 30 and 60 degrees.

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Abstract

一种湿式蚀刻方法及装置，所述方法包含步骤：提供一湿式蚀刻配置，包括一输送带（C）及其上方的一喷液装置（D），所述输送带（C）用以沿一输送方向（E）由一较高的上游端（C1）输送物件到一较低的下游端（C2）；提供一待蚀刻件（G），所述待蚀刻件（G）具有一光致抗蚀图案（R），所述光致抗蚀图案（R）具有至少一线段，所述至少一线段沿至少一直线方向延伸；将所述待蚀刻件（G）放置在所述输送带（C）上，并且致使所述线段延伸的所述直线方向与所述输送方向（E）之间的一夹角介于30至60度；及控制所述输送带（C）输送所述待蚀刻件（G），且控制所述喷液装置（D）向下喷淋蚀刻液。

Description

湿式蚀刻方法及装置 技术领域
本发明是有关于一种湿式蚀刻方法及装置，特别是有关于一种待蚀刻件的摆放取向的湿式蚀刻方法及装置。
 背景技术
在湿式蚀刻(WET)技术中，通常以喷淋(spray)模式向下喷出蚀刻液到输送带上的物件。
以用于制造TFT-LCD的玻璃为例，目前玻璃尺寸变得越来越大，在一倾角(tilt)模式下，在所述输送带的一上游端到一下游端之间会有相对于一水平面的一倾角。
当玻璃在输送带上输送时，玻璃表面累积的蚀刻液层，将对喷淋流体起到一定的缓冲作用，从而降低喷淋压力产生的传质对流，对蚀刻效率有一定减弱作用；另，蚀刻液受到重力作用会逐渐从玻璃较高的一侧往较低的一侧汇集，蚀刻液汇集的流动过程中，如果玻璃表面的光致抗蚀剂的走向与蚀刻液流向相互平行或垂直，将会分别造成蚀刻液流速的极端情况，使得玻璃在不同部位的蚀刻液积累量不同，导致蚀刻程度不均。
因此，现有技术存在缺陷，急需改进。
 技术问题
本发明提供一种湿式蚀刻方法及装置，以避免现有技术所存在的蚀刻程度不均问题。
 技术解决方案
本发明的一方面提供一种湿式蚀刻方法，包含步骤：提供一湿式蚀刻配置，所述湿式蚀刻配置包括一输送带，所述输送带用以沿一输送方向由一较高的上游端输送物件到一较低的下游端，所述输送带上方具有一喷液装置；所述输送带在所述上游端与所述下游端之间具有相对于一水平面的一倾角，所述倾角为5度；提供一待蚀刻件，所述待蚀刻件具有一光致抗蚀图案，所述光致抗蚀图案具有至少一线段，所述至少一线段沿至少一直线方向延伸；所述待蚀刻件还具有至少一沉积层及一基底层，所述至少一沉积层位在所述基底层上，所述光致抗蚀图案位在所述至少一沉积层上；将所述待蚀刻件放置在所述输送带上，并且致使所述线段延伸的所述直线方向与所述输送方向之间的一夹角介于30至60度；及控制所述输送带输送所述待蚀刻件，且所述喷液装置向下喷淋蚀刻液。
在本发明的一实施例中，所述夹角介于40至50度。
在本发明的一实施例中，所述夹角为45度。
在本发明的一实施例中，所述光致抗蚀图案具有至少一第一线段及至少一第二线段，所述第一线段沿一第一直线方向延伸，所述第二线段沿一第二直线方向延伸，所述第一直线方向与所述第二直线方向相互垂直。
在本发明的一实施例中，所述第一线段及所述第二线段的数量分别为数个，所述数个第一线段中的至少一个与所述数个第二线段中的至少一个相互连接。
在本发明的一实施例中，所述待蚀刻件为用于制作一显示器面板的一玻璃制品。
本发明的另一方面提供一种湿式蚀刻方法，包含步骤：提供一湿式蚀刻配置，所述湿式蚀刻配置包括一输送带，所述输送带用以沿一输送方向由一较高的上游端输送物件到一较低的下游端，所述输送带上方具有一喷液装置；提供一待蚀刻件，所述待蚀刻件具有一光致抗蚀图案，所述光致抗蚀图案具有至少一线段，所述至少一线段沿至少一直线方向延伸；将所述待蚀刻件放置在所述输送带上，并且致使所述线段延伸的所述直线方向与所述输送方向之间的一夹角介于30至60度；及控制所述输送带输送所述待蚀刻件，且所述喷液装置向下喷淋蚀刻液。
在本发明的一实施例中，所述夹角介于40至50度。
在本发明的一实施例中，所述夹角为45度。
在本发明的一实施例中，所述光致抗蚀图案具有至少一第一线段及至少一第二线段，所述第一线段沿一第一直线方向延伸，所述第二线段沿一第二直线方向延伸，所述第一直线方向与所述第二直线方向相互垂直。
在本发明的一实施例中，所述第一线段及所述第二线段的数量分别为数个，所述数个第一线段中的至少一个与所述数个第二线段中的至少一个相互连接。
在本发明的一实施例中，所述待蚀刻件还具有至少一沉积层及一基底层，所述至少一沉积层位在所述基底层上，所述光致抗蚀图案位在所述至少一沉积层上。
在本发明的一实施例中，所述待蚀刻件为用于制作一显示器面板的一玻璃制品。
在本发明的一实施例中，所述输送带在所述上游端与所述下游端之间具有相对于一水平面的一倾角，所述倾角为5度。
本发明的另一方面提供一种湿式蚀刻装置，包括：一输送带，用以将一待蚀刻件沿一输送方向由一较高的上游端输送到一较低的下游端；一喷液装置，位于所述输送带上方，用以向下喷淋蚀刻液到在所述上游端与所述下游端之间的所述待蚀刻件；及一电控组件，包括一马达、一控制器及一摄影机，所述控制器电性连接所述马达及所述摄影机，所述马达被配置驱动所述输送带，所述摄影机朝向通过所述上游端处的所述待蚀刻件摄取至少一图案影像，所述控制器依据所述图案影像控制所述马达作动。
在本发明的一实施例中，所述控制器依据所述图案影像解析至少一线段延伸的至少一直线方向，判断所述直线方向与所述输送方向之间的一夹角是否介于30至60度，若判断为是，所述控制器产生一启动信号给所述马达；若判断为否，所述控制器产生一禁用信号给所述马达。
 有益效果
与现有技术相比较，本发明的湿式蚀刻方法及装置，将所述待蚀刻件在所述输送带摆放的位置旋转一角度小于90度，例如：致使所述光致抗蚀图案的线段延伸的所述直线方向与所述输送方向之间的一夹角介于30至60度，无需更改设备构造，即可避免现有技术所存在的蚀刻不均的极端现象，有利于蚀刻程度平均化。
 附图说明
图1是本发明的湿式蚀刻装置进行蚀刻过程的侧视示意图。
图2是一待蚀刻件的一上表面具有一光致抗蚀图案的上视示意图。
图3是在倾角模式下的蚀刻过程的磷酸铝浓度的示意图。
图4是本发明的所述待蚀刻件的光致抗蚀图案具有至少一线段延伸的至少一直线方向与一输送方向之间的夹角示意图。
图5是本发明的湿式蚀刻装置具有一电控组件的构件连线示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1所示，本发明一方面的湿式蚀刻装置可包括：一输送带C及一喷液装置D，所述输送带C可由自动化输送模组构成，用以将一待蚀刻件G(例如玻璃等基板)沿一输送方向E由一较高的上游端C1输送到一较低的下游端C2，例如：所述输送带C在所述上游端C1与所述下游端C2之间具有相对于一水平面的一倾角θ 1，所述倾角θ 1可介于4至6度，例如：5度；所述喷液装置D，被配置位于所述输送带C上方，用以沿一喷液方向P向下喷淋蚀刻液到在所述上游端C1与所述下游端C2之间的所述待蚀刻件G。以下举例说明本发明的待蚀刻件G的实施样态，但不以此为限。
举例来说，如图1及图2所示，所述待蚀刻件G的一上表面可具有一光致抗蚀图案R，例如：所述光致抗蚀图案R可由光致抗蚀剂(PR)形成，所述光致抗蚀图案R具有至少一线段，用以形成电路布局等，所述至少一线段沿至少一直线方向延伸。在一实施例中，如图1所示，所述待蚀刻件G还具有至少一沉积层M1及一基底层M2，所述至少一沉积层M1位在所述基底层M2上，所述光致抗蚀图案R位在所述至少一沉积层M1上。
请再参阅图1及图2所示，在所述待蚀刻件G沿所述输送方向E移动的过程中，从所述喷液装置D落下的蚀刻液会受重力影响，而逐渐朝向所述下游端C2汇集，在蚀刻液流向所述下游端C2的过程中，蚀刻液在所述待蚀刻件G所在区域B、所述待蚀刻件G前的区域A1及所述待蚀刻件G后的区域A2受到的阻力将不相同。以下举例讨论所述待蚀刻件G的摆设取向对蚀刻液的影响。
举例来说，如图2所示，所述光致抗蚀图案R可具有至少一线段，所述至少一线段沿至少一直线方向延伸，例如：至少一第一线段R1沿一第一直线方向X(如在图2中的侧向)延伸，至少一第二线段R2沿一第二直线方向Y(如在图2中的纵向)延伸，所述第一直线方向X与所述第二直线方向Y相互垂直，例如：所述第一线段R1及所述第二线段R2的数量可分别为数个，所述数个第一线段R1中的至少一个与所述数个第二线段R2中的至少一个相互连接。
如图1及图2所示，在蚀刻液流向所述下游端C2的过程中，如果蚀刻液的流向(即输送方向E)与所述光致抗蚀图案R的第一线段R1、第二线段R2平行或垂直，将会产生蚀刻不均的极端现象。例如：沿所述第一直线方向X(与输送方向E平行)延伸的第一线段R1对蚀刻液的阻力最小，将导致蚀刻液停留时间过短；沿所述第二直线方向Y(与输送方向E垂直)延伸的第二线段R2对蚀刻液的阻力最大，将导致蚀刻液停留时间过长，故蚀刻不均会极为明显。
举例来说，如图3所示，如果对宽度为2200毫米(mm)的玻璃基板在5度倾角下蚀刻过程中的磷酸铝(AlPO 4)浓度进行监测，则可发现在玻璃顶端的磷酸铝(AlPO 4)的浓度相较中部和底端也有更快下降。AlPO 4浓度从1.6降至0.2，顶端/中部/底端分别需经过10μm/28μm /38μm的扩散层，这会存在一厚度差值δ。
另一方面，如图1、2及图4所示，如果将所述待蚀刻件G在所述输送带C摆放的位置以顺时针或逆时针方向旋转一角度小于90度，例如：如图4所示，逆时针方向旋转所述待蚀刻件G，致使所述光致抗蚀图案R的线段(如R1、R2)延伸的所述直线方向X、Y与所述输送方向E之间的一夹角(如θ 2或θ 3)介于30至60度，例如：30、35、40、45、50、55及60度等，优选地，所述夹角(如θ 2或θ 3)可选择介于40至50度，在所述待蚀刻件G沿所述输送方向E移动的过程中，可以适度避免上述蚀刻不均的极端现象，最优选地，所述夹角可选择为45度，在所述待蚀刻件G沿所述输送方向E移动的过程中，可以使蚀刻液受到的阻力适中，有利于蚀刻程度平均化。
因此，在所述待蚀刻件G的摆放位置上，可以选择以机械化方式实现上述角度，例如：以机器手臂或转动平台致使所述待蚀刻件G在所述输送带C旋转如上角度，再使所述待蚀刻件G沿所述输送方向E移动，以利蚀刻程度平均化。
举例来说，如图1及图5所示，为了利用自动化技术实现如上所述的内容，上述湿式蚀刻装置实施例还可包括一电控组件，例如：所述电控组件可包括一马达1、一控制器2及一摄影机3，所述控制器2电性连接所述马达1及所述摄影机3，所述马达1可被配置为驱动所述输送带C，所述摄影机3可被配置为朝向通过所述上游端C1处的所述待蚀刻件G摄取至少一图案影像(如图4所示)，所述控制器2可被配置为依据所述图案影像控制所述马达1作动。
在一实施例中，所述控制器2可被配置为依据所述图案影像解析至少一线段延伸的至少一直线方向，例如：采用边缘影像处理技术侦测所述线段(如R1、R2)延伸的直线方向，以判断所述直线方向(如X、Y)与所述输送方向E之间的一夹角(如θ 2或θ 3)是否介于30至60度，若判断为是，所述控制器2可被配置为产生一启动信号给所述马达1，用以驱动所述输送带C；若判断为否，所述控制器2产生一禁用信号给所述马达1，用以停止所述输送带C作动；可选地，所述控制器2还可依据所述禁用信号产生一提示信息(例如：文字或影音信息等)，用以提示所述待蚀刻件G需被移动等。
此外，如图1及图4所示，相应于上述湿式蚀刻装置实施例，本发明另一方面的湿式蚀刻方法可包含步骤：提供一湿式蚀刻配置(如图1所示)，所述湿式蚀刻配置可包括一输送带C，所述输送带C用以沿一输送方向E由一较高的上游端C1输送物件到一较低的下游端C2，所述输送带C上方具有一喷液装置D；提供一待蚀刻件G，所述待蚀刻件G具有一光致抗蚀图案R，所述光致抗蚀图案R具有至少一线段(如R1、R2)，所述至少一线段沿至少一直线方向(如X、Y)延伸；将所述待蚀刻件G放置在所述输送带C上，并且致使所述线段(如R1、R2)延伸的所述直线方向(如X、Y)与所述输送方向E之间的一夹角(如θ 2或θ 3)介于30至60度；及控制所述输送带C输送所述待蚀刻件G，且所述喷液装置D向下喷淋蚀刻液，例如：所述待蚀刻件G可为用于制作一显示器面板的一玻璃制品等。此实施例的详细实施内容已说明如上，不再赘述于此。
与现有技术相比较，本发明的湿式蚀刻方法及装置，将所述待蚀刻件在所述输送带摆放的位置旋转一角度小于90度，例如：致使所述光致抗蚀图案的线段延伸的所述直线方向与所述输送方向之间的一夹角介于30至60度，无需更改设备构造，即可避免现有技术所存在的蚀刻不均的极端现象，有利于蚀刻程度平均化。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (16)

  1. 一种湿式蚀刻方法，其包含步骤：
    提供一湿式蚀刻配置，所述湿式蚀刻配置包括一输送带，所述输送带用以沿一输送方向由一较高的上游端输送物件到一较低的下游端，所述输送带上方具有一喷液装置；所述输送带在所述上游端与所述下游端之间具有相对于一水平面的一倾角，所述倾角为5度；
    提供一待蚀刻件，所述待蚀刻件具有一光致抗蚀图案，所述光致抗蚀图案具有至少一线段，所述至少一线段沿至少一直线方向延伸；所述待蚀刻件还具有至少一沉积层及一基底层，所述至少一沉积层位在所述基底层上，所述光致抗蚀图案位在所述至少一沉积层上；
    将所述待蚀刻件放置在所述输送带上，并且致使所述线段延伸的所述直线方向与所述输送方向之间的一夹角介于30至60度；及
    控制所述输送带输送所述待蚀刻件，且控制所述喷液装置向下喷淋蚀刻液。
  2. 如权利要求1所述的湿式蚀刻方法，其中所述夹角介于40至50度。
  3. 如权利要求2所述的湿式蚀刻方法，其中所述夹角为45度。
  4. 如权利要求1所述的湿式蚀刻方法，其中所述光致抗蚀图案具有至少一第一线段及至少一第二线段，所述第一线段沿一第一直线方向延伸，所述第二线段沿一第二直线方向延伸，所述第一直线方向与所述第二直线方向相互垂直。
  5. 如权利要求4所述的湿式蚀刻方法，其中所述第一线段及所述第二线段的数量分别为数个，所述数个第一线段中的至少一个与所述数个第二线段中的至少一个相互连接。
  6. 如权利要求1所述的湿式蚀刻方法，其中所述待蚀刻件为用于制作一显示器面板的一玻璃制品。
  7. 一种湿式蚀刻方法，其包含步骤：
    提供一湿式蚀刻配置，所述湿式蚀刻配置包括一输送带，所述输送带用以沿一输送方向由一较高的上游端输送物件到一较低的下游端，所述输送带上方具有一喷液装置；
    提供一待蚀刻件，所述待蚀刻件具有一光致抗蚀图案，所述光致抗蚀图案具有至少一线段，所述至少一线段沿至少一直线方向延伸；
    将所述待蚀刻件放置在所述输送带上，并且致使所述线段延伸的所述直线方向与所述输送方向之间的一夹角介于30至60度；及
    控制所述输送带输送所述待蚀刻件，且控制所述喷液装置向下喷淋蚀刻液。
  8. 如权利要求7所述的湿式蚀刻方法，其中所述夹角介于40至50度。
  9. 如权利要求8所述的湿式蚀刻方法，其中所述夹角为45度。
  10. 如权利要求7所述的湿式蚀刻方法，其中所述光致抗蚀图案具有至少一第一线段及至少一第二线段，所述第一线段沿一第一直线方向延伸，所述第二线段沿一第二直线方向延伸，所述第一直线方向与所述第二直线方向相互垂直。
  11. 如权利要求10所述的湿式蚀刻方法，其中所述第一线段及所述第二线段的数量分别为数个，所述数个第一线段中的至少一个与所述数个第二线段中的至少一个相互连接。
  12. 如权利要求7所述的湿式蚀刻方法，其中所述待蚀刻件还具有至少一沉积层及一基底层，所述至少一沉积层位在所述基底层上，所述光致抗蚀图案位在所述至少一沉积层上。
  13. 如权利要求7所述的湿式蚀刻方法，其中所述待蚀刻件为用于制作一显示器面板的一玻璃制品。
  14. 如权利要求7所述的湿式蚀刻方法，其中所述输送带在所述上游端与所述下游端之间具有相对于一水平面的一倾角，所述倾角为5度。
  15. 一种湿式蚀刻装置，其包括：
    一输送带，用以将一待蚀刻件沿一输送方向由一较高的上游端输送到一较低的下游端；
    一喷液装置，位于所述输送带上方，用以向下喷淋蚀刻液到在所述上游端与所述下游端之间的所述待蚀刻件；及
    一电控组件，包括一马达、一控制器及一摄影机，所述控制器电性连接所述马达及所述摄影机，所述马达被配置驱动所述输送带，所述摄影机朝向通过所述上游端处的所述待蚀刻件摄取至少一图案影像，所述控制器依据所述图案影像控制所述马达作动。
  16. 如权利要求15所述的湿式蚀刻装置，其中所述控制器依据所述图案影像解析至少一线段延伸的至少一直线方向，判断所述直线方向与所述输送方向之间的一夹角是否介于30至60度，若判断为是，所述控制器产生一启动信号给所述马达；若判断为否，所述控制器产生一禁用信号给所述马达。
PCT/CN2019/103913 2019-06-28 2019-09-02 湿式蚀刻方法及装置 Ceased WO2020258511A1 (zh)

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