WO2020248419A1 - 显示面板及显示模组 - Google Patents

显示面板及显示模组 Download PDF

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Publication number
WO2020248419A1
WO2020248419A1 PCT/CN2019/106482 CN2019106482W WO2020248419A1 WO 2020248419 A1 WO2020248419 A1 WO 2020248419A1 CN 2019106482 W CN2019106482 W CN 2019106482W WO 2020248419 A1 WO2020248419 A1 WO 2020248419A1
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WO
WIPO (PCT)
Prior art keywords
metal layer
retaining wall
layer
display panel
boundary
Prior art date
Application number
PCT/CN2019/106482
Other languages
English (en)
French (fr)
Inventor
金江江
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/605,552 priority Critical patent/US11437546B2/en
Publication of WO2020248419A1 publication Critical patent/WO2020248419A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the application relates to the display field, and in particular to a display panel and a display module.
  • the encapsulation layer of the existing display panel is usually composed of an inorganic layer and an organic layer.
  • the thickness of the organic layer is generally thick. Since the organic layer has certain fluidity, the edge area of the existing display panel is provided with a retaining wall to prevent the organic layer from overflowing.
  • the characteristics of the film in the display panel will change.
  • the stress concentration in this area will easily cause the film to fall off, making the water and oxygen in the atmosphere carry out the inside of the film. , Causing the signal wiring inside the panel to fail and cause an abnormality.
  • the present application provides a display panel and a display module to solve the technical problem that the signal wiring inside the existing display panel is easy to fail.
  • the application provides a display panel, which includes:
  • the light-emitting device layer on the array substrate includes an anode layer on the array substrate, and the anode layer includes at least one metal layer;
  • the display panel further includes at least one retaining wall on the array substrate;
  • the distance between the edge of at least one metal layer in the anode layer and the first boundary of the display panel is greater than the distance between the barrier wall and the first boundary.
  • the display panel includes a display area and a non-display area located at the periphery of the display area;
  • the anode layer extends from the display area of the display panel to the non-display area of the display panel, and the retaining wall is located in the non-display area;
  • At least one metal layer in the anode layer extending to the non-display area does not exceed the retaining wall.
  • the display panel includes a first retaining wall and a second retaining wall
  • the first retaining wall is arranged close to the display area
  • the second retaining wall is arranged away from the display area
  • At least one metal layer in the anode layer extending to the non-display area does not exceed the first retaining wall.
  • the anode layer includes a first metal layer, a second metal layer, and a third metal layer that are stacked;
  • the first metal layer is located on the array substrate
  • the second metal layer is located on the first metal layer
  • the third metal layer is located on the second metal layer
  • the distance between the edge of at least one of the first metal layer, the second metal layer, and the third metal layer and the first boundary is greater than the distance between the first retaining wall and the The spacing of the first boundary.
  • the distance between the edge of the second metal layer and the first boundary is greater than the distance between the first retaining wall and the first boundary;
  • the orthographic projection of the first retaining wall on the first metal layer does not intersect the first metal layer.
  • the distance between the edges of the first metal layer and the third metal layer and the first boundary is smaller than the distance between the edges of the second metal layer and the first boundary;
  • the third metal layer covers the second metal layer.
  • the distance between the edges of the first metal layer and the third metal layer and the first boundary is greater than the distance between the first retaining wall and the first boundary;
  • the orthographic projection of the first retaining wall on the first metal layer does not intersect with the third metal layer, and the orthographic projection of the first retaining wall on the third metal layer is the same as that of the third metal layer.
  • the layers do not intersect.
  • the distance between the edges of the first metal layer and the third metal layer and the first boundary is smaller than the distance between the first retaining wall and the first boundary;
  • the orthographic projection of the first retaining wall on the first metal layer intersects the third metal layer, and the orthographic projection of the first retaining wall on the third metal layer intersects with the third metal layer intersect.
  • the height of the first retaining wall is smaller than the height of the second retaining wall.
  • This application also proposes a display module, wherein the display module includes a display panel and a polarizer layer and a cover layer on the display panel;
  • the display panel includes:
  • the light-emitting device layer on the array substrate includes an anode layer on the array substrate, and the anode layer includes at least one metal layer;
  • the display panel further includes at least one retaining wall on the array substrate;
  • the distance between the edge of at least one metal layer in the anode layer and the first boundary of the display panel is greater than the distance between the barrier wall and the first boundary.
  • the display panel includes a display area and a non-display area located at the periphery of the display area;
  • the anode layer extends from the display area of the display panel to the non-display area of the display panel;
  • the retaining wall is located in the non-display area
  • At least one metal layer in the anode layer extending to the non-display area does not exceed the retaining wall.
  • the display panel includes a first retaining wall and a second retaining wall
  • the first retaining wall is arranged close to the display area
  • the second retaining wall is arranged away from the display area
  • At least one metal layer in the anode layer extending to the non-display area does not exceed the first retaining wall.
  • the anode layer includes a first metal layer, a second metal layer, and a third metal layer that are stacked;
  • the first metal layer is located on the array substrate
  • the second metal layer is located on the first metal layer
  • the third metal layer is located on the second metal layer
  • the distance between the edge of at least one of the first metal layer, the second metal layer, and the third metal layer and the first boundary is greater than the distance between the first retaining wall and the The spacing of the first boundary.
  • the distance between the edge of the second metal layer and the first boundary is greater than the distance between the first retaining wall and the first boundary;
  • the orthographic projection of the first retaining wall on the first metal layer does not intersect the first metal layer.
  • the distance between the edges of the first metal layer and the third metal layer and the first boundary is smaller than the distance between the edges of the second metal layer and the first boundary;
  • the third metal layer covers the second metal layer.
  • the distance between the edges of the first metal layer and the third metal layer and the first boundary is greater than the distance between the first retaining wall and the first boundary;
  • the orthographic projection of the first retaining wall on the first metal layer does not intersect with the third metal layer, and the orthographic projection of the first retaining wall on the third metal layer is the same as that of the third metal layer.
  • the layers do not intersect.
  • the distance between the edges of the first metal layer and the third metal layer and the first boundary is smaller than the distance between the first retaining wall and the first boundary;
  • the orthographic projection of the first retaining wall on the first metal layer intersects the third metal layer, and the orthographic projection of the first retaining wall on the third metal layer intersects with the third metal layer intersect.
  • the height of the first retaining wall is smaller than the height of the second retaining wall.
  • the height of the first retaining wall is smaller than the height of the second retaining wall.
  • the anode layer located under the retaining wall is arranged away from the retaining wall to prevent water and oxygen from entering the display panel from the retaining wall area when the film structure of the retaining wall area changes, causing the anode layer to fail and reduce Product reliability.
  • FIG. 1 is a diagram of the first film structure of the display panel of this application.
  • FIG. 2 is a diagram of the second film layer structure of the display panel of this application.
  • FIG. 1 is a diagram of the first film layer structure of the display panel of the present application.
  • the display panel 100 includes an array substrate 10, a light emitting device layer 20 on the array substrate 10, and a thin film packaging layer 30 on the light emitting device layer 20.
  • the array substrate 10 includes a substrate and a thin film transistor layer on the substrate.
  • the raw material of the substrate may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the material of the flexible substrate may be PI (polyimide).
  • the thin film transistor layer includes a plurality of thin film transistor units.
  • the thin film transistor unit may be an etching barrier type, a back channel etching type, a top gate thin film transistor type, etc., which is not specifically limited in this embodiment.
  • This application takes the top-gate thin film transistor type as an example for description.
  • the thin film transistor unit may include: a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an inter-insulating layer, a source and drain electrode, a passivation layer, and a flat layer.
  • the light emitting device layer 20 includes an anode layer 21, a cathode layer, and a light emitting layer 22 located between the anode layer 21 and the cathode layer.
  • the anode layer 21 is located on the flat layer.
  • the anode layer 21 includes at least one metal layer.
  • the display panel 100 further includes at least one retaining wall 40 on the array substrate 10.
  • the distance between the edge of at least one metal layer in the anode layer 21 and the first boundary of the display panel 100 is greater than the distance between the barrier wall 40 and the first boundary.
  • the display panel 100 includes a display area 200 and a non-display area 300 located at the periphery of the display area 200.
  • the retaining wall 40 is located in the non-display area 300 of the display panel 100.
  • the anode layer 21 extends from the display area 200 of the display panel 100 to the non-display area 300 of the display panel 100, and at least one metal layer in the anode layer 21 extending to the non-display area 300 does not exceed The retaining wall 40.
  • the display panel 100 may include a first retaining wall 41 and a second retaining wall 42.
  • the first retaining wall 41 is located close to the display area 200, and the second retaining wall 42 is located away from the display area 200.
  • the height of the first retaining wall 41 may be smaller than the height of the second retaining wall 42.
  • the first retaining wall 41 includes a first film layer 411.
  • the second retaining wall 42 includes the first film layer 411 and the second film layer 421 which are stacked.
  • the first film layer 411 and the second film layer 421 are formed in different photomask processes.
  • the material of the first film layer 411 may be the same as the material of the flat layer, and the material of the second film layer 421 may be the same as the material of the pixel definition layer.
  • the materials of the first film layer 411 and the second film layer 421 may be organic materials.
  • the anode layer 21 may include a first metal layer 211, a second metal layer 212, and a third metal layer 213 that are stacked.
  • the first metal layer 211 is located on the array substrate 10.
  • the second metal layer 212 is located on the first metal layer 211.
  • the third metal layer 213 is located on the second metal layer 212.
  • the distance between the edge of at least one of the first metal layer 211, the second metal layer 212, and the third metal layer 213 and the first boundary is greater than that of the first barrier.
  • the distance between the second metal layer 212 and the first retaining wall 41 in the first direction is d2, which is greater than the distance between the first retaining wall 41 and the first boundary
  • the orthographic projection of the first retaining wall 41 on the first metal layer 211 does not intersect with the first metal layer 211.
  • the first direction may be a direction parallel to the long side of the display panel 100 and a direction parallel to the short side of the display panel 100.
  • the distance d2 between the second metal layer 212 and the first retaining wall 41 in the first direction is such that the boundary of the second metal layer 212 near the edge area of the display panel 100 and the The distance between the first retaining wall 41 close to the boundary of the display area 200.
  • the distance between the edges of the first metal layer 211 and the third metal layer 213 and the first boundary is smaller than the distance between the edges of the second metal layer 212 and the first boundary.
  • the distance between the first metal layer 211 and the third metal layer 213 and the edge area of the display panel 100 is greater than the distance between the first barrier wall 41 and the edge area of the display panel 100.
  • the orthographic projection of the first retaining wall 41 on the first metal layer 211 does not intersect with the third metal layer 213, and the orthographic projection of the first retaining wall 41 on the third metal layer 213 and The third metal layer 213 does not intersect.
  • the distance d3 is greater than the distance between the first retaining wall 41 and the first boundary.
  • the third metal layer 213 covers the second metal layer 212.
  • d1 may be equal to d3.
  • d1 is greater than d3.
  • FIG. 2 is a diagram of the second film layer structure of the display panel 100 of the present application.
  • the distance between the second metal layer 212 and the first retaining wall 41 in the first direction is d2, which is greater than the distance between the first retaining wall 41 and the first boundary.
  • the orthographic projection of the first retaining wall 41 on the first metal layer 211 does not intersect the first metal layer 211.
  • the first metal layer 211 and the third metal layer 213 extend from the display area 200 to the non-display area 300 and exceed the first retaining wall 41.
  • the distance between the edges of the first metal layer 211 and the third metal layer 213 and the first boundary is smaller than the distance between the first retaining wall 41 and the first boundary.
  • the orthographic projection of the first retaining wall 41 on the first metal layer 211 intersects the third metal layer 213, and the orthographic projection of the first retaining wall 41 on the third metal layer 213 intersects with the The third metal layer 213 intersects.
  • the orthographic projection of the second retaining wall 42 on the first metal layer 211 does not intersect with the third metal layer 213, and the orthographic projection of the second retaining wall 42 on the third metal layer 213 and The third metal layer 213 does not intersect.
  • the material of the first metal layer 211 may include but is limited to indium tin oxide.
  • the material of the second metal layer 212 may include but is not limited to silver.
  • the material of the third metal layer 213 may include but is not limited to indium tin oxide.
  • the distance between at least one metal layer in the anode layer 21 and the retaining wall 40 in the first direction is greater than 20 microns.
  • the thin film encapsulation layer 30 is mainly used to block water and oxygen, and prevent external water vapor from corroding the organic light-emitting layer.
  • the thin film encapsulation layer 30 can be formed by alternately stacking at least one organic layer and at least one inorganic layer.
  • the organic layer is usually located in the middle of the thin film encapsulation layer 30, and the inorganic layer is located on both sides of the thin film encapsulation layer 30, wrapping the organic layer in the middle.
  • the thin film encapsulation layer 30 includes a first inorganic layer 301, a first organic layer 302 located on the first inorganic layer 301, and a second inorganic layer located on the first organic layer 302 303.
  • the film encapsulation layer 30 covers the first retaining wall 41 and the second retaining wall 42.
  • the first organic layer 302 is blocked by the first retaining wall 41 on a side of the first retaining wall 41 close to the display area 200.
  • the organic layer in the thin film encapsulation layer 30 is made of organic material with fluidity, in order to prevent the organic layer from overflowing, the first inorganic layer 301 and the first organic layer The total thickness of 302 is smaller than the thickness of the second retaining wall 42.
  • the second inorganic layer 303 covers the first organic layer 302, and the boundary of the second inorganic layer 303 exceeds the boundary of the first inorganic layer 301.
  • the organic layer in the thin film encapsulation layer 30 is prone to irreversible changes in a high-temperature environment, causing failure, it loses the function of blocking water and oxygen.
  • the thickness of the second retaining wall 42 is greater than the thickness of the first retaining wall 41, the stress concentration on the second retaining wall 42 is greater than that of the first retaining wall 41.
  • the film layer is likely to fall off in the area of the second retaining wall 42, and water and oxygen enter the interior of the display panel 100 from the area of the second retaining wall 42. Therefore, the anode layer 21 of the present application does not exceed the second retaining wall 42.
  • the first retaining wall 41 is also more prone to film shedding, and the second metal layer 212 in the anode layer 21 is used as the main signal transmission metal layer. Therefore, the application needs to ensure that the The second metal layer 212 and the first retaining wall 41 form a distance of at least 20 micrometers to prevent the signal wiring inside the panel from failing and causing abnormalities.
  • the application also proposes a display module, which includes the above-mentioned display panel.
  • the display module also includes a polarizer layer and a cover layer on the display panel.
  • the working principle of the display module is the same or similar to that of the display panel.
  • This application also proposes an electronic device including the above-mentioned display module.
  • the electronic device includes, but is not limited to, mobile phones, tablet computers, computer monitors, game consoles, televisions, display screens, wearable devices, and other household appliances or household appliances with display functions.
  • the working principle of the electronic device is the same as or similar to that of the display module, and details are not repeated here.
  • the present application proposes a display panel and a display module.
  • the display panel includes: an array substrate; a light emitting device layer on the array substrate includes an anode layer on the array substrate, and the anode layer includes at least one metal layer;
  • the display panel further includes at least one barrier wall on the array substrate; the distance between the edge of the at least one metal layer in the anode layer and the first boundary of the display panel is greater than the distance between the barrier wall and the first boundary.
  • the anode layer located under the retaining wall is arranged far away from the retaining wall to prevent water and oxygen from entering the display panel from the retaining wall area when the membrane structure of the retaining wall area changes, causing the anode layer to fail and reducing the product reliability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板(100)及显示模组，该显示面板(100)包括：阵列基板(10)；位于该阵列基板(10)上的发光器件层(20)，包括位于该阵列基板(10)上的阳极层(21)，该阳极层(21)包括至少一金属层；该显示面板(100)还包括位于该阵列基板(10)上的至少一挡墙(40)；该阳极层(21)中的至少一金属层的边缘与该显示面板(100)的第一边界的间距大于该挡墙(40)与该第一边界的间距。

Description

显示面板及显示模组 技术领域
本申请涉及显示领域，特别涉及一种显示面板及显示模组。
 背景技术
现有显示面板的封装层通常由无机层和有机层叠加构成，而为了防止水氧气的渗入显示面板内部，该有机层的膜层厚度一般较厚。由于有机层具有一定的流动性，因此现有显示面板的边缘区域设置有挡墙以避免该有机层溢出。
当显示面板处于高温高湿环境中时，显示面板中的膜层特性会发生变化，另外由于挡墙的存在使得该区域应力集中易造成膜层的脱落，使得大气中的水氧气进行膜层内部，导致面板内部的信号走线失效，产生异常。
因此，目前亟需一种显示面板以解决上述技术问题。
 技术问题
本申请提供一种显示面板及显示模组，以解决现有显示面板内部的信号走线易失效的技术问题。
 技术解决方案
本申请提供一种显示面板，其包括：
阵列基板；
位于所述阵列基板上的发光器件层，包括位于所述阵列基板上的阳极层，所述阳极层包括至少一金属层；
所述显示面板还包括位于所述阵列基板上的至少一挡墙；
在第一方向上，所述阳极层中的至少一金属层的边缘与所述显示面板第一边界的间距大于所述挡墙与所述第一边界的间距。
在本申请的显示面板中，所述显示面板包括显示区域和位于所述显示区域外围的非显示区域；
所述阳极层从所述显示面板的显示区域向所述显示面板的非显示区域延伸，所述挡墙位于所述非显示区域；
延伸至所述非显示区域的所述阳极层中的至少一金属层不超过所述挡墙。
在本申请的显示面板中，
所述显示面板包括第一挡墙和第二挡墙；
所述第一挡墙靠近所述显示区域设置；
所述第二挡墙远离所述显示区域设置；
延伸至所述非显示区域的所述阳极层中的至少一金属层不超过所述第一挡墙。
在本申请的显示面板中，所述阳极层包括层叠设置的第一金属层、第二金属层及第三金属层；
所述第一金属层位于所述阵列基板上；
所述第二金属层位于所述第一金属层上；
所述第三金属层位于所述第二金属层上；
在第一方向上，所述第一金属层、所述第二金属层及所述第三金属层中的至少一者的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距。
在本申请的显示面板中，
在第一方向上，所述第二金属层的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距；
所述第一挡墙在所述第一金属层上的正投影与所述第一金属层不相交。
在本申请的显示面板中，
所述第一金属层及所述第三金属层的边缘与所述第一边界的间距小于所述第二金属层的边缘与所述第一边界的间距；
其中，所述第三金属层覆盖所述第二金属层。
在本申请的显示面板中，
在第一方向上，所述第一金属层及所述第三金属层的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距；
所述第一挡墙在所述第一金属层上的正投影与所述第三金属层不相交，所述第一挡墙在所述第三金属层上的正投影与所述第三金属层不相交。
在本申请的显示面板中，
在第一方向上，所述第一金属层及所述第三金属层的边缘与所述第一边界的间距小于所述第一挡墙与所述第一边界的间距；
所述第一挡墙在所述第一金属层上的正投影与所述第三金属层相交，所述第一挡墙在所述第三金属层上的正投影与所述第三金属层相交。
在本申请的显示面板中，
所述第一挡墙的高度小于所述第二挡墙的高度。
本申请还提出了一种显示模组，其中，所述显示模组包括显示面板及位于所述显示面板上的偏光片层、盖板层；
所述显示面板包括：
阵列基板；
位于所述阵列基板上的发光器件层，包括位于所述阵列基板上的阳极层，所述阳极层包括至少一金属层；
所述显示面板还包括位于所述阵列基板上的至少一挡墙；
在第一方向上，所述阳极层中的至少一金属层的边缘与所述显示面板的第一边界的间距大于所述挡墙与所述第一边界的间距。
在本申请的显示模组中，所述显示面板包括显示区域和位于所述显示区域外围的非显示区域；
所述阳极层从所述显示面板的显示区域向所述显示面板的非显示区域延伸；
所述挡墙位于所述非显示区域；
延伸至所述非显示区域的所述阳极层中的至少一金属层不超过所述挡墙。
在本申请的显示模组中，
所述显示面板包括第一挡墙和第二挡墙；
所述第一挡墙靠近所述显示区域设置；
所述第二挡墙远离所述显示区域设置；
延伸至所述非显示区域的所述阳极层中的至少一金属层不超过所述第一挡墙。
在本申请的显示模组中，所述阳极层包括层叠设置的第一金属层、第二金属层及第三金属层；
所述第一金属层位于所述阵列基板上；
所述第二金属层位于所述第一金属层上；
所述第三金属层位于所述第二金属层上；
在第一方向上，所述第一金属层、所述第二金属层及所述第三金属层中的至少一者的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距。
在本申请的显示模组中，
在第一方向上，所述第二金属层的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距；
所述第一挡墙在所述第一金属层上的正投影与所述第一金属层不相交。
在本申请的显示模组中，
所述第一金属层及所述第三金属层的边缘与所述第一边界的间距小于所述第二金属层的边缘与所述第一边界的间距；
其中，所述第三金属层覆盖所述第二金属层。
在本申请的显示模组中，
在第一方向上，所述第一金属层及所述第三金属层的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距；
所述第一挡墙在所述第一金属层上的正投影与所述第三金属层不相交，所述第一挡墙在所述第三金属层上的正投影与所述第三金属层不相交。
在本申请的显示模组中，
在第一方向上，所述第一金属层及所述第三金属层的边缘与所述第一边界的间距小于所述第一挡墙与所述第一边界的间距；
所述第一挡墙在所述第一金属层上的正投影与所述第三金属层相交，所述第一挡墙在所述第三金属层上的正投影与所述第三金属层相交。
在本申请的显示模组中，
所述第一挡墙的高度小于所述第二挡墙的高度。
在本申请的显示模组中，
所述第一挡墙的高度小于所述第二挡墙的高度。
 有益效果
本申请通过将位于所述挡墙下面的阳极层远离所述挡墙设置，避免挡墙区域的膜层结构发生变化时，水氧气从挡墙区域进入显示面板内部，导致该阳极层失效，降低产品的可靠性。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请显示面板的第一种膜层结构图；
图2为本申请显示面板的第二种膜层结构图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
请参阅图1，图1为本申请显示面板的第一种膜层结构图。
所述显示面板100包括阵列基板10、位于所述阵列基板10上的发光器件层20、及位于所述发光器件层20上的薄膜封装层30。
所述阵列基板10包括基板和位于所述基板上的薄膜晶体管层。
所述基板的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。当所述基板为柔性基板时，所述柔性基板的材料可以为PI（聚酰亚胺）。
所述薄膜晶体管层包括多个薄膜晶体管单元。所述薄膜晶体管单元可以为蚀刻阻挡层型、背沟道蚀刻型或顶栅薄膜晶体管型等，本实施例具体没有限制。
本申请以顶栅薄膜晶体管型为例进行说明。
例如，所述薄膜晶体管单元可以包括：遮光层、缓冲层、有源层、栅绝缘层、栅极、间绝缘层、源漏极、钝化层及平坦层。
所述发光器件层20包括阳极层21、阴极层、及位于所述阳极层21与所述阴极层之间的发光层22。
所述阳极层21位于所述平坦层上。
所述阳极层21包括至少一金属层。
请参阅图1，所述显示面板100还包括位于所述阵列基板10上的至少一挡墙40。在第一方向上，所述阳极层21中的至少一金属层的边缘与所述显示面板100第一边界的间距大于所述挡墙40与所述第一边界的间距。
在本申请的显示面板100中，所述显示面板100包括显示区域200和位于所述显示区域200外围的非显示区域300。
所述挡墙40位于所述显示面板100的非显示区域300。所述阳极层21从所述显示面板100的显示区域200向所述显示面板100的非显示区域300延伸，延伸至所述非显示区域300的所述阳极层21中的至少一金属层不超过所述挡墙40。
在本实施例中，所述显示面板100可以包括第一挡墙41和第二挡墙42。
所述第一挡墙41靠近所述显示区域200设置，所述第二挡墙42远离所述显示区域200设置。
在本实施例中，所述第一挡墙41的高度可以小于所述第二挡墙42的高度。
在本实施例中，所述第一挡墙41包括第一膜层411。
在本实施例中，所述第二挡墙42包括堆叠设置的所述第一膜层411和第二膜层421。所述第一膜层411与所述第二膜层421在不同光罩工艺中形成。
在本实施例中，第一膜层411的材料可以与所述平坦层的材料相同，第二膜层421的材料可以与像素定义层的材料相同。
在本实施例中，所述第一膜层411及所述第二膜层421的材料可以为有机材料。
在本实施例中，所述阳极层21可以包括层叠设置的第一金属层211、第二金属层212及第三金属层213。所述第一金属层211位于所述阵列基板10上。所述第二金属层212位于所述第一金属层211上。所述第三金属层213位于所述第二金属层212上。
在第一方向上，所述第一金属层211、所述第二金属层212及所述第三金属层213中的至少一者的边缘与所述第一边界的间距大于所述第一挡墙41与所述第一边界的间距。
请参阅图1，所述第二金属层212与所述第一挡墙41在所述第一方向上的间距为d2，该间距大于所述第一挡墙41与所述第一边界的间距，所述第一挡墙41在所述第一金属层211上的正投影与所述第一金属层211不相交。
在本实施例中，所述第一方向可以为与所述显示面板100长边平行的方向、及与所述显示面板100短边平行的方向。
在本实施例中，所述第二金属层212与所述第一挡墙41在所述第一方向上的间距d2为所述第二金属层212靠近所述显示面板100边缘区域边界与所述第一挡墙41靠近所述显示区域200的边界之间的距离。
所述第一金属层211及所述第三金属层213的边缘与所述第一边界的间距小于所述第二金属层212的边缘与所述第一边界的间距。所述第一金属层211及所述第三金属层213与所述显示面板100边缘区域的间距大于所述第一挡墙41与所述显示面板100边缘区域的间距。
所述第一挡墙41在所述第一金属层211上的正投影与所述第三金属层213不相交，所述第一挡墙41在所述第三金属层213上的正投影与所述第三金属层213不相交。
所述第一金属层211与所述第一挡墙41在所述第一方向上的间距d1、及所述第三金属层213与所述第一挡墙41在所述第一方向上的间距d3大于所述第一挡墙41与所述第一边界的间距。
在本实施例中，所述第三金属层213覆盖所述第二金属层212。
在本实施例中，d1可以与d3相等。
在本实施例中，d1大于d3。
请参阅图2，图2为本申请显示面板100的第二种膜层结构图。
所述第二金属层212与所述第一挡墙41在所述第一方向上的间距为d2，该间距大于所述第一挡墙41与所述第一边界的间距。所述第一挡墙41在所述第一金属层211上的正投影与所述第一金属层211不相交。
在本实施例中，所述第一金属层211及所述第三金属层213从显示区域200向非显示区域300延伸并超过所述第一挡墙41。
所述第一金属层211及所述第三金属层213的边缘与所述第一边界的间距小于所述第一挡墙41与所述第一边界的间距。
所述第一挡墙41在所述第一金属层211上的正投影与所述第三金属层213相交，所述第一挡墙41在所述第三金属层213上的正投影与所述第三金属层213相交。所述第二挡墙42在所述第一金属层211上的正投影与所述第三金属层213不相交，所述第二挡墙42在所述第三金属层213上的正投影与所述第三金属层213不相交。
在图1~图2中，所述第一金属层211的材料可以包括但限定于氧化铟锡。所述第二金属层212的材料可以包括但不限定于银。所述第三金属层213的材料可以包括但不限定于氧化铟锡。
在图1~图2中，所述阳极层21中的至少一金属层与所述挡墙40在第一方向上的间距大于20微米。
请参阅图1或图2，所述薄膜封装层30主要用于阻水阻氧，防止外部水汽对有机发光层的侵蚀。所述薄膜封装层30可以由至少一有机层与至少一无机层交错层叠而成。有机层通常位于所述薄膜封装层30的中间，无机层位于所述薄膜封装层30的两侧，将有机层包裹在中间。
在本实施例中，所述薄膜封装层30包括第一无机层301、位于所述第一无机层301上的第一有机层302、及位于所述第一有机层302上的第二无机层303。
在本实施例中，所述薄膜封装层30覆盖所述第一挡墙41及所述第二挡墙42。所述第一有机层302被所述第一挡墙41挡在所述第一挡墙41靠近所述显示区域200的一侧。
在本实施例中，由于所述薄膜封装层30中的有机层由具有流动性的有机材料构成，因此为了防止所述有机层的溢出，所述第一无机层301与所述第一有机层302的厚度之和小于所述第二挡墙42的厚度。
在本实施例中，所述第二无机层303覆盖所述第一有机层302，且所述第二无机层303的边界超过第一无机层301的边界。
由于所述薄膜封装层30中的有机层易在高温环境中发生不可逆的变化导致失效，因此失去阻水氧的功能。
另外，由于所述第二挡墙42的厚度大于所述第一挡墙41的厚度，因此在所述第二挡墙42的应力集中程度大于所述第一挡墙41。导致所述第二挡墙42区域易出现膜层脱落现象，水氧气从所述第二挡墙42区域进入所述显示面板100内部。因此本申请的所述阳极层21的位于均未超过所述第二挡墙42。
相比其他平坦区域，所述第一挡墙41也较易产生出现膜层脱落现象，而阳极层21中的第二金属层212作为主要传输信号的金属层，因此本申请中需要保证所述第二金属层212与所述第一挡墙41形成至少20微米的间距，以避免面板内部的信号走线失效，产生异常。
本申请还提出了一种显示模组，所述显示模组包括上述显示面板。所述显示模组还包括位于所述显示面板上的偏光片层和盖板层等。所述显示模组的工作原理与所述显示面板相同或相似。
本申请还提出了一种电子装置，所述电子装置包括上述显示模组。所述电子装置包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、显示屏幕、可穿戴设备及其他具有显示功能的生活电器或家用电器等。所述电子装置的工作原理与所述显示模组相同或者相似，具体不再赘述。
本申请提出了一种显示面板及显示模组，该显示面板包括：阵列基板；位于该阵列基板上的发光器件层，包括位于该阵列基板上的阳极层，该阳极层包括至少一金属层；该显示面板还包括位于该阵列基板上的至少一挡墙；该阳极层中的至少一金属层的边缘与该显示面板的第一边界的间距大于该挡墙与该第一边界的间距。本申请通过将位于该挡墙下面的阳极层远离该挡墙设置，避免挡墙区域的膜层结构发生变化时，水氧气从挡墙区域进入显示面板内部，导致该阳极层失效，降低产品的可靠性。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种显示面板，其包括：
    阵列基板；
    位于所述阵列基板上的发光器件层，包括位于所述阵列基板上的阳极层，所述阳极层包括至少一金属层；
    所述显示面板还包括位于所述阵列基板上的至少一挡墙；
    在第一方向上，所述阳极层中的至少一金属层的边缘与所述显示面板的第一边界的间距大于所述挡墙与所述第一边界的间距。
  2. 根据权利要求1所述的显示面板，其中，所述显示面板包括显示区域和位于所述显示区域外围的非显示区域；
    所述阳极层从所述显示面板的显示区域向所述显示面板的非显示区域延伸；
    所述挡墙位于所述非显示区域；
    延伸至所述非显示区域的所述阳极层中的至少一金属层不超过所述挡墙。
  3. 根据权利要求2所述的显示面板，其中，
    所述显示面板包括第一挡墙和第二挡墙；
    所述第一挡墙靠近所述显示区域设置；
    所述第二挡墙远离所述显示区域设置；
    延伸至所述非显示区域的所述阳极层中的至少一金属层不超过所述第一挡墙。
  4. 根据权利要求3所述的显示面板，其中，所述阳极层包括层叠设置的第一金属层、第二金属层及第三金属层；
    所述第一金属层位于所述阵列基板上；
    所述第二金属层位于所述第一金属层上；
    所述第三金属层位于所述第二金属层上；
    在第一方向上，所述第一金属层、所述第二金属层及所述第三金属层中的至少一者的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距。
  5. 根据权利要求4所述的显示面板，其中，
    在第一方向上，所述第二金属层的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距；
    所述第一挡墙在所述第一金属层上的正投影与所述第一金属层不相交。
  6. 根据权利要求5所述的显示面板，其中，
    所述第一金属层及所述第三金属层的边缘与所述第一边界的间距小于所述第二金属层的边缘与所述第一边界的间距；
    其中，所述第三金属层覆盖所述第二金属层。
  7. 根据权利要求6所述的显示面板，其中，
    在第一方向上，所述第一金属层及所述第三金属层的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距；
    所述第一挡墙在所述第一金属层上的正投影与所述第三金属层不相交，所述第一挡墙在所述第三金属层上的正投影与所述第三金属层不相交。
  8. 根据权利要求6所述的显示面板，其中，
    在第一方向上，所述第一金属层及所述第三金属层的边缘与所述第一边界的间距小于所述第一挡墙与所述第一边界的间距；
    所述第一挡墙在所述第一金属层上的正投影与所述第三金属层相交，所述第一挡墙在所述第三金属层上的正投影与所述第三金属层相交。
  9. 根据权利要求3所述的显示面板，其中，
    所述第一挡墙的高度小于所述第二挡墙的高度。
  10. 根据权利要求3所述的显示面板，其中，
    所述第一挡墙的高度小于所述第二挡墙的高度。
  11. 一种显示模组，其中，所述显示模组包括显示面板及位于所述显示面板上的偏光片层、盖板层；
    所述显示面板包括：
    阵列基板；
    位于所述阵列基板上的发光器件层，包括位于所述阵列基板上的阳极层，所述阳极层包括至少一金属层；
    所述显示面板还包括位于所述阵列基板上的至少一挡墙；
    在第一方向上，所述阳极层中的至少一金属层的边缘与所述显示面板的第一边界的间距大于所述挡墙与所述第一边界的间距。
  12. 根据权利要求11所述的显示模组，其中，所述显示面板包括显示区域和位于所述显示区域外围的非显示区域；
    所述阳极层从所述显示面板的显示区域向所述显示面板的非显示区域延伸；
    所述挡墙位于所述非显示区域；
    延伸至所述非显示区域的所述阳极层中的至少一金属层不超过所述挡墙。
  13. 根据权利要求12所述的显示模组，其中，
    所述显示面板包括第一挡墙和第二挡墙；
    所述第一挡墙靠近所述显示区域设置；
    所述第二挡墙远离所述显示区域设置；
    延伸至所述非显示区域的所述阳极层中的至少一金属层不超过所述第一挡墙。
  14. 根据权利要求13所述的显示模组，其中，所述阳极层包括层叠设置的第一金属层、第二金属层及第三金属层；
    所述第一金属层位于所述阵列基板上；
    所述第二金属层位于所述第一金属层上；
    所述第三金属层位于所述第二金属层上；
    在第一方向上，所述第一金属层、所述第二金属层及所述第三金属层中的至少一者的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距。
  15. 根据权利要求14所述的显示模组，其中，
    在第一方向上，所述第二金属层的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距；
    所述第一挡墙在所述第一金属层上的正投影与所述第一金属层不相交。
  16. 根据权利要求15所述的显示模组，其中，
    所述第一金属层及所述第三金属层的边缘与所述第一边界的间距小于所述第二金属层的边缘与所述第一边界的间距；
    其中，所述第三金属层覆盖所述第二金属层。
  17. 根据权利要求16所述的显示模组，其中，
    在第一方向上，所述第一金属层及所述第三金属层的边缘与所述第一边界的间距大于所述第一挡墙与所述第一边界的间距；
    所述第一挡墙在所述第一金属层上的正投影与所述第三金属层不相交，所述第一挡墙在所述第三金属层上的正投影与所述第三金属层不相交。
  18. 根据权利要求16所述的显示模组，其中，
    在第一方向上，所述第一金属层及所述第三金属层的边缘与所述第一边界的间距小于所述第一挡墙与所述第一边界的间距；
    所述第一挡墙在所述第一金属层上的正投影与所述第三金属层相交，所述第一挡墙在所述第三金属层上的正投影与所述第三金属层相交。
  19. 根据权利要求13所述的显示模组，其中，
    所述第一挡墙的高度小于所述第二挡墙的高度。
  20. 根据权利要求13所述的显示模组，其中，
    所述第一挡墙的高度小于所述第二挡墙的高度。
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