WO2020245890A1 - Module d'alimentation et dispositif de conversion d'alimentation - Google Patents

Module d'alimentation et dispositif de conversion d'alimentation Download PDF

Info

Publication number
WO2020245890A1
WO2020245890A1 PCT/JP2019/022041 JP2019022041W WO2020245890A1 WO 2020245890 A1 WO2020245890 A1 WO 2020245890A1 JP 2019022041 W JP2019022041 W JP 2019022041W WO 2020245890 A1 WO2020245890 A1 WO 2020245890A1
Authority
WO
WIPO (PCT)
Prior art keywords
base
power module
power
curved portion
module according
Prior art date
Application number
PCT/JP2019/022041
Other languages
English (en)
Japanese (ja)
Inventor
晃久 福本
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2021524521A priority Critical patent/JP7094447B2/ja
Priority to PCT/JP2019/022041 priority patent/WO2020245890A1/fr
Publication of WO2020245890A1 publication Critical patent/WO2020245890A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a power module and a power conversion device.
  • Patent Document 1 discloses a semiconductor device including a power semiconductor element, a drain reed, a gate reed, and a sealant.
  • the power semiconductor element is mounted on the drain electrode of the drain reed.
  • the power semiconductor element is electrically connected to the drain lead and the gate lead.
  • the sealant seals the power semiconductor element, a part of the drain reed, and a part of the gate lead.
  • a recess and a protrusion corresponding to the recess are formed in a part of the drain reed.
  • a part of the sealing body is filled in the recess of the drain reed.
  • the protruding part of the drain reed bites into the sealing body. Therefore, the adhesion strength between the sealing body and the drain lead is high.
  • Patent Document 1 the protruding portion has a sharp angle. Therefore, when a thermal cycle is applied to the semiconductor device of Patent Document 1, the stress caused by the difference between the linear expansion coefficient of the drain lead and the linear expansion coefficient of the encapsulant is generated by the sharp corner of the protruding portion and the sealing. It is applied intensively to the interface with the stop. At the interface between the protrusion and the sealant, the sealant separates from the drain lead.
  • the semiconductor device of Patent Document 1 has low reliability.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a power module and a power conversion device having improved reliability.
  • the power module of the present invention includes an insulating circuit board, a power semiconductor element, a base, and a sealing member.
  • the insulated circuit board has a front surface and a back surface opposite to the front surface.
  • the power semiconductor element is bonded to the front surface of the insulating circuit board.
  • the base is joined to the back surface of the insulated circuit board using a joining member.
  • the sealing member seals the power semiconductor element and the insulating circuit board.
  • the base includes a first part and a second part. The first portion of the base is in contact with the joining member.
  • the second portion of the base is exposed from the joining member and surrounds the first portion. At least a part of the second portion is selectively provided with at least one first curved portion that is curved so as to be convex on the side proximal to the power semiconductor element with respect to the first portion.
  • the power conversion device of the present invention includes a main conversion circuit and a control circuit.
  • the main conversion circuit has the power module of the present invention, and is configured to convert and output the input power.
  • the control circuit is configured to output a control signal for controlling the main conversion circuit to the main conversion circuit.
  • At least one first curved portion is provided on the base. Therefore, even if a cooling cycle is applied to the power module, the stress caused by the difference between the linear expansion coefficient of the base and the linear expansion coefficient of the sealing member is generated between at least one first bending portion and the sealing member. It is suppressed that the application is concentrated on a part of the interface between them. Further, at least one first curved portion increases the contact area between the base and the sealing member and increases the adhesion strength between the base and the sealing member. In this way, the sealing member is prevented from peeling off from the base.
  • the power module and power converter of the present invention have improved reliability.
  • FIG. 5 is a schematic cross-sectional view of the power module of the first embodiment in cross-sectional line II-II shown in FIG. It is the schematic sectional drawing of the power module of the modification of Embodiment 1. It is a figure which shows the flowchart of the manufacturing method of the power module of Embodiment 1. It is the schematic plan view of the power module of Embodiment 2.
  • FIG. 5 is a schematic cross-sectional view of the power module of the second embodiment in the cross-sectional line VI-VI shown in FIG. It is a figure which shows the flowchart of the manufacturing method of the power module of Embodiment 2. It is the schematic sectional drawing of the power module of Embodiment 3.
  • FIG. 5 is a schematic cross-sectional view of the power module of the first embodiment in cross-sectional line II-II shown in FIG. It is the schematic sectional drawing of the power module of the modification of Embodiment 1. It is a figure which shows the flowchart of the manufacturing method of the power module of Embodiment 1.
  • Embodiment 1 The power module 1 of the first embodiment will be described with reference to FIGS. 1 and 2.
  • the power module 1 mainly includes insulating circuit boards 10a and 10b, power semiconductor elements 20 and 21, a base 31, and a sealing member 40.
  • the power module 1 may further include lead terminals 26 and 29 and wirings 27 and 28.
  • the power module 1 may further include an enclosure 38.
  • the power module 1 may further include a heat sink 45.
  • the power module 1 may further include a heat transfer layer 46.
  • the power module 1 includes two insulated circuit boards 10a and 10b.
  • the insulating circuit board 10a and the insulating circuit board 10b are arranged in the first direction (x direction) at intervals from each other.
  • the power module 1 may include at least one insulated circuit board.
  • the insulating circuit boards 10a and 10b each include an insulating board 11.
  • the insulating substrate 11 extends in the first direction (x direction) and the second direction (y direction) perpendicular to the first direction.
  • the insulating substrate 11 includes a first surface and a second surface opposite to the first surface.
  • the insulating substrate 11 may be formed of, for example, an inorganic material (ceramic material) such as alumina, aluminum nitride, or silicon nitride.
  • the insulating substrate 11 may be formed of, for example, a resin material such as an epoxy resin, a polyimide resin, or a cyanate resin to which an inorganic filler (ceramic filler) such as alumina, aluminum nitride, or silicon nitride is added.
  • a resin material such as an epoxy resin, a polyimide resin, or a cyanate resin to which an inorganic filler (ceramic filler) such as alumina, aluminum nitride, or silicon nitride is added.
  • the insulating circuit board 10a includes a conductive circuit pattern 12a and a conductive plate 13.
  • the insulating circuit board 10b includes a conductive circuit pattern 12b and a conductive plate 13.
  • the conductive circuit pattern 12a is provided on the first surface of the insulating substrate 11.
  • the conductive circuit pattern 12b is provided on the first surface of the insulating substrate 11.
  • the conductive circuit pattern 12a may have a pattern different from that of the conductive circuit pattern 12b.
  • the conductive plate 13 is provided on the second surface of the insulating substrate 11.
  • the conductive circuit patterns 12a and 12b and the conductive plate 13 may be formed of a metal material having high electric conductivity and high thermal conductivity such as copper or aluminum.
  • the insulating circuit boards 10a and 10b may be, for example, a DCB (Direct Copper Bonded) board or a DAB (Direct Aluminum Bonded) board.
  • the insulated circuit boards 10a and 10b each have a front surface 10p and a back surface 10q on the opposite side of the front surface 10p.
  • the front surface 10p of the insulating circuit board 10a includes the surface of the conductive circuit pattern 12a.
  • the back surface 10q of the insulating circuit board 10a includes the front surface of the conductive plate 13.
  • the front surface 10p of the insulating circuit board 10b includes the surface of the conductive circuit pattern 12b.
  • the back surface 10q of the insulating circuit board 10b includes the front surface of the conductive plate 13.
  • the power module 1 includes two power semiconductor elements 20 and 21.
  • the power module 1 may include at least one power semiconductor element.
  • the power semiconductor elements 20 and 21 are, for example, an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a freewheel diode (FWD).
  • the power semiconductor devices 20 and 21 may be formed of silicon or a wide bandgap semiconductor material such as silicon carbide, gallium nitride or diamond.
  • the power semiconductor element 20 is joined to the front surface 10p of the insulating circuit board 10a.
  • the power semiconductor element 20 is bonded to the conductive circuit pattern 12a by using the first bonding member 23.
  • the power semiconductor element 21 is bonded to the front surface 10p of the insulating circuit board 10b.
  • the power semiconductor element 21 is bonded to the conductive circuit pattern 12b by using the first bonding member 23.
  • the first joining member 23 is not particularly limited, but may be a solder such as lead-free solder, a metal nanoparticle sintered body such as a silver nanoparticle sintered body, or a conductive adhesive.
  • the conductive adhesive is, for example, a resin adhesive in which conductive particles such as silver particles are dispersed.
  • one power semiconductor element is mounted on one insulating circuit board.
  • a plurality of power semiconductor elements may be mounted on one insulating circuit board.
  • the lead terminal 26 is pulled out from the insulating circuit board 10a (conductive circuit pattern 12a).
  • the power semiconductor element 20 and the conductive circuit pattern 12b are electrically connected to each other by wiring 27.
  • the power semiconductor element 21 and a part of the conductive circuit pattern 12b are electrically connected to each other by wiring 28.
  • the lead terminal 29 is pulled out from the insulating circuit board 10b (a part of the conductive circuit pattern 12b).
  • the lead terminals 26 and 29 are made of a metal material having high electrical conductivity such as copper or aluminum.
  • Wiring 27, 28 may be formed of, for example, a metal material such as copper, aluminum, copper alloy or aluminum alloy.
  • Wiring 27, 28 may be, for example, a conductive wire or a conductive ribbon.
  • the base 31 is, for example, a metal material such as copper or aluminum, a metal-based composite material (MMC) such as AlSiC, or a metal material such as 400 series stainless steel, 42 alloy or Invar whose main component is iron. It may be formed.
  • the base 31 may be a foil base.
  • the foil base has a thickness of 200 ⁇ m or less.
  • the foil base may have a thickness of 150 ⁇ m or less, a thickness of 100 ⁇ m or less, or a thickness of 50 ⁇ m or less.
  • the base 31 is joined to the back surface 10q of the insulating circuit boards 10a and 10b by using the second joining member 39.
  • the second joining member 39 is, for example, solder such as lead-free solder.
  • the base 31 includes a first portion 32 and a second portion 33. The first portion 32 of the base 31 is in contact with the second joining member 39. The second portion 33 of the base 31 is exposed from the second joining member 39 and surrounds the first portion 32 of the base 31.
  • At least a part of the second portion 33 of the base 31 is selectively provided with at least one first curved portion 33a.
  • the first curved portion 33a is not provided in the first portion 32 of the base 31.
  • At least one first curved portion 33a is curved so as to be convex toward the side (+ z side) proximal to the power semiconductor elements 20 and 21 with respect to the first portion 32 of the base 31.
  • At least one first curved portion 33a has a radius of curvature of 1 ⁇ m or more.
  • At least one first curved portion 33a may have a radius of curvature of 10 ⁇ m or more, may have a radius of curvature of 100 ⁇ m or more, or may have a radius of curvature of 1 mm or more.
  • the second portion 33 of the base 31 further includes a flat portion 33b in addition to the first curved portion 33a.
  • At least one first curved portion 33a may extend along at least a part of the outer edge of the first portion 32. At least one first curved portion 33a may extend along the first direction (x direction). At least one first curved portion 33a may extend along the second direction (y direction). At least one first curved portion 33a may extend along the first direction (x direction) and the second direction (y direction). At least one first curved portion 33a may extend along the entire outer edge of the first portion 32. At least one first curved portion 33a may surround the first portion 32. As shown in FIG. 3, in the power module 1a of the modified example of the present embodiment, at least one first curved portion 33a may be a plurality of first curved portions 33a.
  • the power semiconductor element 20 may be arranged directly above the second bonding member 39 in a plan view of the front surface 10p of the insulating circuit board 10a.
  • the power semiconductor element 21 may be arranged directly above the second joining member 39 in a plan view of the front surface 10p of the insulating circuit board 10b.
  • the power semiconductor element 20 may be arranged inside the outer edge of the second bonding member 39 in a plan view of the front surface 10p of the insulating circuit boards 10a and 10b.
  • the power semiconductor element 21 may be arranged inside the outer edge of the second joining member 39. Therefore, the length of the heat dissipation path from the power semiconductor elements 20 and 21 to the base 31 is shortened. The heat generated by the power semiconductor elements 20 and 21 is efficiently dissipated to the outside of the power module 1.
  • the outer body 38 may be attached to the peripheral edge of the first main surface of the base 31.
  • the base 31 and the outer body 38 form a case 30.
  • the power module 1 is a case type module.
  • the power module 1 may be a mold type module that does not include the enclosure 38.
  • the outer body 38 may be formed of, for example, an insulating material having high heat resistance.
  • the insulating material having high heat resistance is, for example, a thermoplastic resin such as polyphenylene sulfide (PPS) or polybutylene terephthalate (PBT).
  • the sealing member 40 seals the power semiconductor elements 20 and 21 and the insulating circuit boards 10a and 10b.
  • the sealing member 40 may be made of a resin material such as an epoxy resin.
  • the sealing member 40 is provided on the base 31.
  • the second portion 33 of the base 31 may come into contact with the sealing member 40.
  • the sealing member 40 fills at least a part of the internal space of the case 30 composed of the base 31 and the outer enclosure 38.
  • the base 31 is too thin to provide the power module 1 with sufficient structural strength.
  • the sealing member 40 is thicker than the base 31 and can provide the power module 1 with sufficient structural strength.
  • the heat sink 45 is attached to the second main surface of the base 31 opposite to the first main surface of the base 31.
  • the heat sink 45 may be made of a material having a high thermal conductivity, such as aluminum.
  • the heat sink 45 may be attached to the second main surface of the base 31 via the heat transfer layer 46.
  • the heat transfer layer 46 may be, for example, a heat dissipation grease layer or a heat dissipation sheet made of a material such as a phase change material (PCM).
  • PCM phase change material
  • the heat sink 45 may be attached directly to the second main surface of the base 31.
  • the heat sink 45 may be fixed to the outer body 38 and the base 31 by using a fastening member 47 such as a screw.
  • the heat sink 45 may be fixed to the base 31 using an adhesive.
  • the manufacturing method of the power modules 1, 1a of the present embodiment includes preparing a base 31 provided with at least one first curved portion 33a (S1).
  • preparing the base 31 provided with at least one first curved portion 33a (S1) is to machine the base 31 to form at least one first curved portion 33a on the base 31. May include doing. Machining is, for example, stamping or bending.
  • preparing the base 31 provided with at least one first curved portion 33a (S1) casts the base 31 provided with at least one first curved portion 33a using a mold. May include doing.
  • the base 31 is a foil base, it becomes easy to form at least one first curved portion 33a on the base 31.
  • the manufacturing method of the power modules 1 and 1a of the present embodiment includes joining the power semiconductor elements 20 and 21 to the insulated circuit boards 10a and 10b (S2). Specifically, the power semiconductor elements 20 and 21 are joined to the front surfaces 10p (conductive circuit patterns 12a and 12b) of the insulating circuit boards 10a and 10b by using the first joining member 23.
  • the manufacturing method of the power modules 1 and 1a of the present embodiment includes joining the base 31 to the insulated circuit boards 10a and 10b (S3). Specifically, the first main surface of the base 31 is joined to the back surfaces 10q of the insulating circuit boards 10a and 10b by using the second joining member 39.
  • the base 31 is a first portion 32 of the base 31 and is joined to the insulating circuit boards 10a and 10b.
  • the manufacturing method of the power modules 1 and 1a of the present embodiment includes sealing the power semiconductor elements 20 and 21 and the insulating circuit boards 10a and 10b with the sealing member 40 (S4).
  • the sealing resin material is supplied on the first main surface of the base 31.
  • the sealing resin material is supplied to at least a part of the internal space of the case 30.
  • the sealing resin material is cured to form a sealing member 40 that seals the power semiconductor elements 20 and 21 and the insulating circuit boards 10a and 10b.
  • an assembly including the base 31, the insulating circuit boards 10a and 10b, the power semiconductor elements 20 and 21, and the sealing member 40 is formed.
  • the assembly may further include an enclosure 38.
  • an assembly including a base 31, insulating circuit boards 10a and 10b, power semiconductor elements 20 and 21, and a sealing member 40 is attached to a heat sink 45 (S5).
  • the heat sink 45 may be attached to the base 31 via the heat transfer layer 46. In this way, the power modules 1, 1a are obtained.
  • the power semiconductor elements 20 and 21 are attached to the insulated circuit boards 10a and 10b. It may be joined (S2).
  • the power modules 1 and 1a do not have to include the heat sink 45, and the base 31, the insulating circuit boards 10a and 10b, the power semiconductor elements 20 and 21, and the sealing member 40 do not have to be included.
  • the assembly including the above may be power modules 1, 1a.
  • the power modules 1 and 1a of the present embodiment include insulating circuit boards 10a and 10b, power semiconductor elements 20 and 21, a base 31, and a sealing member 40.
  • the insulating circuit boards 10a and 10b have a front surface 10p and a back surface 10q on the opposite side of the front surface 10p.
  • the power semiconductor elements 20 and 21 are joined to the front surface 10p of the insulating circuit boards 10a and 10b.
  • the base 31 is joined to the back surface 10q of the insulating circuit boards 10a and 10b by using a joining member (second joining member 39).
  • the sealing member 40 seals the power semiconductor elements 20 and 21 and the insulating circuit boards 10a and 10b.
  • the base 31 includes a first portion 32 and a second portion 33.
  • the first portion 32 of the base 31 is in contact with the joining member (second joining member 39).
  • the second portion 33 of the base 31 is exposed from the joining member (second joining member 39) and surrounds the first portion 32.
  • At least one first unit that is selectively curved to at least a part of the second portion 33 so as to be convex toward the side (+ z side) proximal to the power semiconductor elements 20 and 21 with respect to the first portion 32.
  • a curved portion 33a is provided.
  • the base 31 is provided with at least one first curved portion 33a. Therefore, even if a thermal cycle is applied to the power modules 1 and 1a, the stress caused by the difference between the linear expansion coefficient of the base 31 and the linear expansion coefficient of the sealing member 40 is still present at least one first curved portion 33a. It is suppressed that the application is concentrated on a part of the interface between the sealing member 40 and the sealing member 40. Further, at least one first curved portion 33a increases the contact area between the base 31 and the sealing member 40, and increases the adhesion strength between the base 31 and the sealing member 40. In this way, the sealing member 40 is prevented from peeling from the base 31.
  • the power modules 1, 1a have improved reliability.
  • the base 31 may be a foil base. Therefore, the distance that the heat generated by the power semiconductor elements 20 and 21 conducts through the base 31 decreases. The heat generated by the power semiconductor devices 20 and 21 is efficiently dissipated. The heat dissipation performance of the power modules 1 and 1a is improved.
  • At least one first curved portion 33a extends along at least a part of the outer edge of the first portion 32. Therefore, the stress caused by the difference between the coefficient of linear expansion of the base 31 and the coefficient of linear expansion of the sealing member 40 is applied to a part of the interface between at least one first curved portion 33a and the sealing member 40. It is suppressed that it is applied intensively. Further, at least one first curved portion 33a increases the contact area between the base 31 and the sealing member 40, and increases the adhesion strength between the base 31 and the sealing member 40. The sealing member 40 is prevented from peeling from the base 31.
  • the power modules 1, 1a have improved reliability.
  • At least one first curved portion 33a extends along the entire outer edge of the first portion 32. Therefore, the stress caused by the difference between the coefficient of linear expansion of the base 31 and the coefficient of linear expansion of the sealing member 40 is applied to a part of the interface between at least one first curved portion 33a and the sealing member 40. It is suppressed that it is applied intensively. Further, at least one first curved portion 33a increases the contact area between the base 31 and the sealing member 40, and increases the adhesion strength between the base 31 and the sealing member 40. The sealing member 40 is prevented from peeling from the base 31.
  • the power modules 1, 1a have improved reliability.
  • At least one first curved portion 33a is a plurality of first curved portions 33a. Therefore, the contact area between the base 31 and the sealing member 40 increases, and the adhesion strength between the base 31 and the sealing member 40 increases. The sealing member 40 is prevented from peeling from the base 31.
  • the power module 1a has improved reliability.
  • the power modules 1 and 1a of the present embodiment further include a heat sink 45.
  • the insulating circuit boards 10a and 10b are joined to the first main surface of the base 31.
  • the heat sink 45 is attached to the second main surface of the base 31 opposite to the first main surface of the base 31.
  • At least one first curved portion 33a is curved so as to be convex toward the side (+ z side) proximal to the power semiconductor elements 20 and 21 with respect to the first portion 32 of the base 31.
  • the at least one first curved portion 33a prevents the base 31 from bending to the side ( ⁇ z side) distal to the power semiconductor elements 20 and 21. Therefore, the heat sink 45 can be attached to the second main surface of the base 31 at the first portion 32 of the base 31 without mechanically interfering with at least one first curved portion 33a.
  • the heat dissipation performance of the power modules 1 and 1a is improved.
  • the heat sink 45 is attached to the base 31 by using the fastening member 47.
  • the heat sink 45 needs to press the base 31 with a pressure that can ensure heat conduction between the base 31 and the heat sink 45. This pressure is defined as the force with which the heat sink 45 presses the base 31 divided by the area of the base 31 pressed by the heat sink 45.
  • the area of the portion of the base 31 pressed by the heat sink 45 is reduced.
  • the heat sink 45 presses the portion of the base 31 excluding at least one first curved portion 33a. Therefore, it is possible to realize the pressure of the heat sink 45 on the base 31 which can secure the heat conduction between the base 31 and the heat sink 45 with a smaller fastening force of the fastening member 47 (pressing pressure of the heat sink 45 on the base 31). Can be done.
  • the internal stress generated in the power modules 1, 1a is reduced, and the power modules 1, 1a have improved reliability. Further, since the number of fastening members 47 or the size of the fastening members 47 can be reduced, the power modules 1 and 1a can be miniaturized.
  • Embodiment 2 The power module 1b of the second embodiment will be described with reference to FIGS. 5 and 6.
  • the power module 1b of the present embodiment has the same configuration as the power module 1 of the first embodiment, but is mainly different in the following points.
  • at least one first curved portion 33a is provided on the entire second portion 33.
  • the second portion 33 of the base 31 does not include the flat portion 33b (see FIG. 2).
  • the sealing member 40 may be made of a thermosetting resin material.
  • the base 31 may have a coefficient of linear expansion larger than that of the sealing member 40.
  • An example of the manufacturing method of the power module 1b of the present embodiment will be described with reference to FIG. 7.
  • An example of the method for manufacturing the power module 1b of the present embodiment includes the following steps S11 and S14 in place of the steps S1 and S4 of the first embodiment.
  • the manufacturing method of the power module 1b of the present embodiment includes preparing the base 31 (S11). In step S1, at least one first curved portion 33a is not formed on the base 31.
  • the manufacturing method of the power module 1b of the present embodiment includes sealing the power semiconductor elements 20 and 21 and the insulating circuit boards 10a and 10b with the sealing member 40 (S14).
  • the sealing member 40 S14
  • At least one first curved portion 33a is provided on the second portion 33 of the base 31 (S15).
  • the sealing resin material is supplied on the first main surface of the base 31.
  • the sealing resin material is supplied to at least a part of the internal space of the case 30.
  • the sealing resin material is a thermosetting resin material. By applying heat to the sealing resin material, the sealing resin material is cured to form the sealing member 40 that seals the power semiconductor elements 20 and 21 and the insulating circuit boards 10a and 10b.
  • the base 31 has a coefficient of linear expansion larger than that of the sealing member 40. Therefore, when the temperature of the sealing member 40 is lowered from the high temperature at which the sealing member 40 is cured to room temperature, the difference between the coefficient of linear expansion of the base 31 and the coefficient of linear expansion of the sealing member 40 causes the base 31 to have a difference. At least one first curved portion 33a is formed in the entire second portion 33. In the method for manufacturing the power module 1b of the present embodiment, the step of machining the base 31 can be omitted.
  • Another example of the method for manufacturing the power module 1b of the present embodiment may include the same steps as the method for manufacturing the power module 1 of the first embodiment. That is, in another example of the method for manufacturing the power module 1b of the present embodiment, at least one first curved portion 33a may be formed in the entire second portion 33 of the base 31 in the step S1. In the power module 1b, at least one first curved portion 33a may be a plurality of first curved portions 33a.
  • the power module 1b of the present embodiment exerts the following effects in addition to the effects of the power modules 1 and 1a of the first embodiment.
  • At least one first curved portion 33a is provided on the entire second portion 33. Therefore, even if a thermal cycle is applied to the power module 1b, the stress caused by the difference between the linear expansion coefficient of the base 31 and the linear expansion coefficient of the sealing member 40 is sealed with at least one first curved portion 33a. It is suppressed that the application is concentrated on a part of the interface with the stop member 40. Further, the contact area between the base 31 and the sealing member 40 is further increased, and the adhesion strength between the base 31 and the sealing member 40 is further increased. The sealing member 40 is prevented from peeling from the base 31.
  • the power module 1b has improved reliability.
  • the area of the portion of the base 31 pressed by the heat sink 45 is further reduced. With less fastening force of the fastening member 47 (pressing pressure of the heat sink 45 on the base 31), the pressure of the heat sink 45 on the base 31 that can secure heat conduction between the base 31 and the heat sink 45 can be realized. ..
  • the internal stress generated in the power module 1b is further reduced, and the power module 1b has improved reliability. Further, since the number of fastening members 47 or the size of the fastening members 47 can be further reduced, the power module 1b can be miniaturized.
  • the sealing member 40 is made of a thermosetting resin material.
  • the base 31 has a coefficient of linear expansion larger than that of the sealing member 40. Therefore, at least one first curved portion 33a can be formed without the step of machining the base 31.
  • the power module 1b can be easily manufactured by a simple process.
  • Embodiment 3 The power module 1c of the third embodiment will be described with reference to FIG.
  • the power module 1c of the present embodiment has the same configuration as the power module 1 of the first embodiment, but is mainly different in the following points.
  • the power module 1c further includes a film 50 selectively provided on at least one first curved portion 33a.
  • the film 50 is not provided on the portion of the base 31 except for the first curved portion 33a.
  • the film 50 has a coefficient of linear expansion smaller than that of the base 31.
  • the film 50 may be formed of, for example, a thermosetting resin containing a filler.
  • the filler is, for example, an inorganic filler (ceramic filler) such as alumina, aluminum nitride or silicon nitride.
  • the thermosetting resin is, for example, an epoxy resin.
  • the film 50 may be formed of, for example, a metal material containing iron as a main component, such as stainless steel in the 400s, 42 alloy or Invar.
  • At least one first bending portion 33a may be a plurality of first bending portions 33a.
  • the power module 1d includes a plurality of films 50, and the plurality of films 50 are selectively provided on the plurality of first curved portions 33a, respectively.
  • at least one first curved portion 33a is provided on the entire second portion 33, and the film 50 is provided on the entire second portion 33 of the base 31. May be done.
  • the manufacturing method of the power modules 1c and 1d of the present embodiment will be described with reference to FIG.
  • the manufacturing method of the power modules 1c and 1d of the present embodiment includes the same steps as the example of the manufacturing method of the power module 1 of the first embodiment shown in FIG. 4, but the step S1 of the first embodiment is provided. Instead of, the following step S21 is provided.
  • the manufacturing method of the power modules 1c and 1d of the present embodiment includes preparing a base 31 provided with at least one first curved portion 33a (S21). Preparing the base 31 provided with at least one first curved portion 33a (S21) is to form a film 50 on a part of the base 31 at a high temperature higher than room temperature (S22), and to prepare the film 50. The temperature of the base 31 on which the film 50 is formed is lowered from the high temperature at which the film 50 is formed on the base 31 to room temperature (S23).
  • the film 50 has a coefficient of linear expansion smaller than that of the base 31. Therefore, when the temperature of the base 31 on which the film 50 is formed is lowered from the high temperature at which the film 50 is formed on the base 31 to room temperature, the difference between the coefficient of linear expansion of the base 31 and the coefficient of linear expansion of the film 50 causes a difference. At least one first curved portion 33a is formed on the second portion 33 of the base 31.
  • the power modules 1c and 1d of the present embodiment have the following effects in addition to the effects of the power modules 1 and 1a of the first embodiment.
  • the power modules 1c and 1d of the present embodiment further include a film 50 selectively provided on at least one first curved portion 33a.
  • the film 50 has a coefficient of linear expansion smaller than that of the base 31. Therefore, at least one first curved portion 33a can be formed without the step of machining the base 31.
  • the power modules 1c and 1d can be easily manufactured by a simple process. Power modules 1c and 1d of various types in small quantities can be easily obtained.
  • Embodiment 4 The power module 1e of the fourth embodiment will be described with reference to FIG.
  • the power module 1e of the present embodiment has the same configuration as the power module 1 of the first embodiment, but is mainly different in the following points.
  • the first portion 32 of the base 31 is provided with a second curved portion 35 that is curved so as to be convex toward the side ( ⁇ z side) distal to the power semiconductor elements 20 and 21. ..
  • the second curved portion 35 has a radius of curvature of 1 ⁇ m or more.
  • the second curved portion 35 may have a radius of curvature of 10 ⁇ m or more, may have a radius of curvature of 100 ⁇ m or more, or may have a radius of curvature of 1 mm or more.
  • the second curved portion 35 is provided in at least a part of the first portion 32 of the base 31.
  • the second curved portion 35 may be provided on the entire first portion 32 of the base 31.
  • the base 31 may have a coefficient of linear expansion smaller than that of the insulating circuit boards 10a and 10b.
  • An example of the manufacturing method of the power module 1e of the present embodiment will be described with reference to FIG.
  • An example of the method for manufacturing the power module 1e of the present embodiment includes the same steps as the method for manufacturing the power module 1 of the first embodiment, but is mainly different in the following points.
  • An example of the method for manufacturing the power module 1e of the present embodiment includes the following process S33 instead of the process S3 of the first embodiment.
  • the manufacturing method of the power module 1e of the present embodiment includes joining the base 31 to the insulating circuit boards 10a and 10b (S33). Specifically, the first main surface of the base 31 is joined to the back surfaces 10q of the insulating circuit boards 10a and 10b by using the second joining member 39.
  • the base 31 is a first portion 32 of the base 31 and is joined to the back surface 10q of the insulating circuit boards 10a and 10b.
  • Joining the base 31 to the insulating circuit boards 10a and 10b (S33) means joining the base 31 to the insulating circuit boards 10a and 10b using the second joining member 39 at a temperature higher than room temperature (S34).
  • the temperature of the base 31 and the insulating circuit boards 10a and 10b joined to each other using the second joining member 39 from the high temperature at which the base 31 is joined to the insulating circuit boards 10a and 10b using the second joining member 39. Includes lowering to room temperature (S35).
  • the base 31 has a coefficient of linear expansion smaller than that of the insulating circuit boards 10a and 10b. Therefore, the temperature of the base 31 and the insulating circuit boards 10a and 10b joined to each other by using the second joining member 39 is changed from the high temperature at which the base 31 is joined to the insulating circuit boards 10a and 10b by using the second joining member 39.
  • the first portion 32 of the base 31 is located on the side distal to the power semiconductor elements 20 and 21.
  • a second curved portion 35 that is curved so as to be convex ( ⁇ z side) is formed.
  • the base 31 is a foil base, it becomes easy to form the second curved portion 35 on the base 31.
  • Another example of the method for manufacturing the power module 1e of the present embodiment may include the same steps as the method for manufacturing the power module 1 of the first embodiment.
  • preparing the base 31 provided with at least one first curved portion 33a (S1) is to machine the base 31 and at least one.
  • the formation of the first curved portion 33a and the second curved portion 35 may be included in the base 31. Machining is, for example, stamping or bending.
  • preparing the base 31 provided with at least one first curved portion 33a (S1) means that at least one first curved portion 33a and the second curved portion 35 are formed by using a mold. It may include casting the provided base 31.
  • at least one first curved portion 33a may be a plurality of first curved portions 33a.
  • the power module 1e of the present embodiment exerts the following effects in addition to the effects of the power module 1 of the first embodiment.
  • the first portion 32 is provided with a second curved portion 35 that is curved so as to be convex on the side ( ⁇ z side) distal to the power semiconductor elements 20 and 21. ing. Therefore, the second curved portion 35 can reliably and thermally connect the base 31 to the heat sink 45. The heat dissipation performance of the power module 1e is improved. Further, since the thickness of the heat transfer layer 46 between the second curved portion 35 and the heat sink 45 is reduced, the thermal resistance between the base 31 and the heat sink 45 is reduced. The heat dissipation performance of the power module 1e is improved.
  • the base 31 has a coefficient of linear expansion smaller than that of the insulating circuit boards 10a and 10b. Therefore, the second curved portion 35 can be formed without the step of machining the base 31.
  • the power module 1e can be easily manufactured by a simple process.
  • the power module 1f of the fifth embodiment will be described with reference to FIG.
  • the power module 1f of the present embodiment has the same configuration as the power module 1 of the first embodiment, but is mainly different in the following points.
  • both ends of the base 31 are folded.
  • Folded portions 36 of the base 31 are provided at both ends of the base 31.
  • the folded portion 36 is formed by folding the base 31 at least once.
  • both ends of the base 31 may be wound.
  • Winding portions 37 of the base 31 may be provided at both ends of the base 31.
  • the winding portion 37 is formed by winding the base 31 at least once.
  • the outer enclosure 38 may be provided with a recess 38r, and the winding portion 37 of the base 31 may be housed in the recess 38r of the outer enclosure 38. Therefore, the enclosure 38 can be easily positioned with respect to the base 31.
  • the manufacturing method of the power modules 1f and 1g of the present embodiment includes the same steps as the manufacturing method of the power module 1 of the first embodiment, and further includes the following step S41.
  • the method for manufacturing the power modules 1f and 1g of the present embodiment further includes forming a folding portion 36 or a winding portion 37 at both ends of the base 31 (S41).
  • the base 31 before the formation of at least one first curved portion 33a is a flat flexible sheet. Therefore, it is difficult to handle the base 31 before at least one first curved portion 33a is formed. Before the formation of at least one first curved portion 33a, the base 31 may be bent due to a slight handling error of the base 31 and become unusable.
  • the folding portion 36 or the winding portion 37 of the base 31 mechanically reinforces both ends of the base 31 to facilitate the handling of the base 31.
  • the folding portion 36 or the winding portion 37 of the base 31 can reduce the possibility that the base 31 becomes unusable due to a handling error of the base 31.
  • at least one first curved portion 33a may be a plurality of first curved portions 33a.
  • the power modules 1f and 1g of the present embodiment have the following effects in addition to the effects of the power module 1 of the first embodiment.
  • the folding portions 36 of the base 31 or the winding portions 37 of the base 31 are provided at both ends of the base 31.
  • the folding portion 36 of the base 31 or the winding portion 37 of the base 31 mechanically reinforces both ends of the base 31 to facilitate the handling of the base 31.
  • the power modules 1f and 1g can be easily manufactured.
  • Embodiment 6 any one of the power modules 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g of the first to fifth embodiments is applied to the power conversion device.
  • the case where the power conversion device 200 of the present embodiment is not particularly limited, but is a three-phase inverter will be described below.
  • the power conversion system shown in FIG. 16 includes a power source 100, a power conversion device 200, and a load 300.
  • the power source 100 is a DC power source, and supplies DC power to the power converter 200.
  • the power supply 100 is not particularly limited, but may be composed of, for example, a DC system, a solar cell, or a storage battery, or may be composed of a rectifier circuit or an AC / DC converter connected to an AC system.
  • the power supply 100 may be configured by a DC / DC converter that converts DC power output from the DC system into another DC power.
  • the power conversion device 200 is a three-phase inverter connected between the power supply 100 and the load 300, converts the DC power supplied from the power supply 100 into AC power, and supplies AC power to the load 300. As shown in FIG. 16, the power conversion device 200 has a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201. It is equipped with 203.
  • the load 300 is a three-phase electric motor driven by AC power supplied from the power converter 200.
  • the load 300 is not particularly limited, but is an electric motor mounted on various electric devices, and is used as, for example, an electric motor for a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, or an air conditioner.
  • the main conversion circuit 201 includes a switching element (not shown) and a freewheeling diode (not shown). By switching the voltage supplied from the power supply 100 by the switching element, the main conversion circuit 201 converts the DC power supplied from the power supply 100 into AC power and supplies it to the load 300.
  • the main conversion circuit 201 is a two-level three-phase full bridge circuit, and has six switching elements and each switching element. It may consist of six anti-parallel freewheeling diodes.
  • the six switching elements are connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase and W phase) of the full bridge circuit. Then, the output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.
  • the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element.
  • the drive circuit may be built in the semiconductor module 202, or may be provided separately from the semiconductor module 202.
  • the drive circuit generates a drive signal for driving the switching element included in the main conversion circuit 201, and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 201.
  • a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of each switching element.
  • the drive signal When the switching element is kept in the on state, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is kept in the off state, the drive signal is a voltage equal to or lower than the threshold voltage of the switching element. It becomes a signal (off signal).
  • the control circuit 203 controls the switching element of the main conversion circuit 201 so that the desired power is supplied to the load 300. Specifically, the time (on time) at which each switching element of the main conversion circuit 201 should be in the on state is calculated based on the power to be supplied to the load 300.
  • the main conversion circuit 201 can be controlled by pulse width modulation (PWM) control that modulates the on-time of the switching element according to the voltage to be output.
  • PWM pulse width modulation
  • a control command is output to the drive circuit included in the main conversion circuit 201 so that an on signal is output to the switching element that should be turned on at each time point and an off signal is output to the switching element that should be turned off. Is output.
  • the drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.
  • the power conversion device 200 As the semiconductor module 202 included in the main conversion circuit 201, the power modules 1, 1a, 1b, 1c, 1d, 1e, 1f, from the first embodiment to the fifth embodiment Any of 1 g is applied. Therefore, the power conversion device 200 according to the present embodiment has improved reliability.
  • the present invention is not limited to this, and can be applied to various power conversion devices.
  • a two-level power conversion device is used, but a three-level power conversion device or a multi-level power conversion device may be used.
  • the present invention may be applied to a single-phase inverter when the power converter supplies power to a single-phase load.
  • the present invention may be applied to a DC / DC converter or an AC / DC converter.
  • the power conversion device to which the present invention is applied is not limited to the case where the load is an electric motor, for example, a power supply device for an electric discharge machine or a laser machine, or an induction heating cooker or a non-contactor power supply system. Can be incorporated into a power supply.
  • the power conversion device to which the present invention is applied can be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

Abstract

L'invention concerne un module d'alimentation (1) pourvu de cartes de circuit isolées (10a, 10b), d'éléments semi-conducteurs d'alimentation (20, 21), d'une base (31) et d'un élément d'étanchéité (40). La base (31) est liée aux cartes de circuit isolées (10a, 10b) par des deuxièmes éléments de liaison (39). La base (31) comporte des premières parties (32) et des deuxièmes parties (33). Les premières parties (32) de la base (31) sont en contact avec les deuxièmes éléments de liaison (39). Les deuxièmes parties (33) de la base (31) sont découvertes à partir des deuxièmes éléments de liaison (39) et entourent les premières parties (32). Les deuxièmes parties (33) sont pourvues chacune d'au moins un premier segment incurvé (33a).
PCT/JP2019/022041 2019-06-03 2019-06-03 Module d'alimentation et dispositif de conversion d'alimentation WO2020245890A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021524521A JP7094447B2 (ja) 2019-06-03 2019-06-03 パワーモジュール及び電力変換装置
PCT/JP2019/022041 WO2020245890A1 (fr) 2019-06-03 2019-06-03 Module d'alimentation et dispositif de conversion d'alimentation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/022041 WO2020245890A1 (fr) 2019-06-03 2019-06-03 Module d'alimentation et dispositif de conversion d'alimentation

Publications (1)

Publication Number Publication Date
WO2020245890A1 true WO2020245890A1 (fr) 2020-12-10

Family

ID=73651950

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/022041 WO2020245890A1 (fr) 2019-06-03 2019-06-03 Module d'alimentation et dispositif de conversion d'alimentation

Country Status (2)

Country Link
JP (1) JP7094447B2 (fr)
WO (1) WO2020245890A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023141769A1 (fr) * 2022-01-25 2023-08-03 华为数字能源技术有限公司 Dispositif d'encapsulation, module d'alimentation et dispositif électronique

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045238A (ja) * 2003-07-23 2005-02-17 Semikron Elektron Gmbh 曲げ強化ベースプレートを備えたパワー半導体モジュール
JP2007184315A (ja) * 2006-01-04 2007-07-19 Hitachi Ltd 樹脂封止型パワー半導体モジュール
JP2015076511A (ja) * 2013-10-09 2015-04-20 株式会社日立製作所 半導体装置およびその製造方法
JP2016086186A (ja) * 2012-03-28 2016-05-19 富士電機株式会社 半導体装置及び半導体装置の製造方法
WO2018235197A1 (fr) * 2017-06-21 2018-12-27 三菱電機株式会社 Dispositif à semi-conducteur, dispositif de conversion de puissance et procédé de production de dispositif à semi-conducteur

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045238A (ja) * 2003-07-23 2005-02-17 Semikron Elektron Gmbh 曲げ強化ベースプレートを備えたパワー半導体モジュール
JP2007184315A (ja) * 2006-01-04 2007-07-19 Hitachi Ltd 樹脂封止型パワー半導体モジュール
JP2016086186A (ja) * 2012-03-28 2016-05-19 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2015076511A (ja) * 2013-10-09 2015-04-20 株式会社日立製作所 半導体装置およびその製造方法
WO2018235197A1 (fr) * 2017-06-21 2018-12-27 三菱電機株式会社 Dispositif à semi-conducteur, dispositif de conversion de puissance et procédé de production de dispositif à semi-conducteur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023141769A1 (fr) * 2022-01-25 2023-08-03 华为数字能源技术有限公司 Dispositif d'encapsulation, module d'alimentation et dispositif électronique

Also Published As

Publication number Publication date
JPWO2020245890A1 (ja) 2021-10-21
JP7094447B2 (ja) 2022-07-01

Similar Documents

Publication Publication Date Title
JP6881238B2 (ja) 半導体モジュール、その製造方法及び電力変換装置
JP6833986B2 (ja) パワーモジュール、電力変換装置、およびパワーモジュールの製造方法
JP7196815B2 (ja) 半導体モジュール及び電力変換装置
WO2020235056A1 (fr) Dispositif semi-conducteur, dispositif de conversion de puissance, et procédé destiné à fabriquer un dispositif semi-conducteur
JP2021048255A (ja) 電気回路体、電力変換装置、および電気回路体の製造方法
JPWO2020157965A1 (ja) 半導体装置およびその製造方法ならびに電力変換装置
JP7094447B2 (ja) パワーモジュール及び電力変換装置
JP6818500B2 (ja) 半導体装置および電力変換装置
JP7091878B2 (ja) パワーモジュール、電力変換装置、及びパワーモジュールの製造方法
JP5948106B2 (ja) パワー半導体モジュール及びそれを用いた電力変換装置
JP7126609B2 (ja) パワー半導体モジュール及び電力変換装置
JP6952889B2 (ja) パワー半導体モジュール及びその製造方法並びに電力変換装置
CN111211060A (zh) 半导体装置、电力变换装置及半导体装置的制造方法
WO2022123870A1 (fr) Corps de circuit électrique, dispositif de conversion de puissance et procédé de fabrication de corps de circuit électrique
JP7053897B2 (ja) 半導体装置、半導体装置の製造方法及び電力変換装置
JP7418474B2 (ja) 半導体装置および電力変換装置
WO2024090278A1 (fr) Dispositif à semi-conducteur, dispositif de conversion de puissance et procédé de production de dispositif à semi-conducteur
WO2022137692A1 (fr) Circuit électrique et dispositif de conversion de puissance
WO2022137701A1 (fr) Élément de circuit électrique et appareil de conversion de puissance
WO2021152795A1 (fr) Dispositif à semi-conducteur et dispositif de conversion de puissance
US11887903B2 (en) Power semiconductor device, method for manufacturing power semiconductor device, and power conversion apparatus
WO2023022001A1 (fr) Module de puissance et dispositif de conversion de puissance
WO2022107697A1 (fr) Module semi-conducteur de puissance et son procédé de fabrication, et appareil de conversion de courant électrique
WO2021100199A1 (fr) Dispositif à semi-conducteurs, son procédé de production, et dispositif de conversion de courant électrique
JP2022029886A (ja) 半導体装置、半導体装置の製造方法及び電力変換装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19932171

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021524521

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19932171

Country of ref document: EP

Kind code of ref document: A1