WO2020244357A1 - 加热装置、包括该加热装置的cvd设备 - Google Patents

加热装置、包括该加热装置的cvd设备 Download PDF

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Publication number
WO2020244357A1
WO2020244357A1 PCT/CN2020/089797 CN2020089797W WO2020244357A1 WO 2020244357 A1 WO2020244357 A1 WO 2020244357A1 CN 2020089797 W CN2020089797 W CN 2020089797W WO 2020244357 A1 WO2020244357 A1 WO 2020244357A1
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Prior art keywords
auxiliary
heating
heater
substrate
auxiliary heater
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PCT/CN2020/089797
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English (en)
French (fr)
Inventor
郑振宇
谢振南
姜勇
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中微半导体设备(上海)股份有限公司
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Priority to DE112020001815.6T priority Critical patent/DE112020001815T5/de
Priority to KR1020217036206A priority patent/KR20210150483A/ko
Publication of WO2020244357A1 publication Critical patent/WO2020244357A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Definitions

  • the present invention relates to a heating device, and also to a chemical vapor deposition (CVD) equipment including the heating device.
  • CVD chemical vapor deposition
  • the substrate is basically a disc-shaped polysilicon material, generally called a wafer.
  • the wafer is maintained at a high temperature and exposed to one or more chemical precursors.
  • the precursors may react or decompose on the surface of the substrate to produce expected deposits.
  • the precursors used for chemical vapor deposition generally include metals, such as metal hydrides, halides, halogen hydrides, and organometallic compounds.
  • the aforementioned precursor will be combined with a carrier gas such as nitrogen, but does not produce a significant reaction.
  • the aforementioned carrier gas and unwanted by-products can be discharged through the gas outlet of the reaction chamber.
  • Metal-organic chemical vapor deposition can be used to continuously generate semiconductor compound layers, thereby fabricating components made of Group III and Group 5 semiconductor materials.
  • Group 3-5 semiconductor materials include light-emitting diodes (LEDs) and other high-performance chips such as laser diodes, optical sensors, and field effect transistors.
  • LEDs light-emitting diodes
  • Such an element can be formed by reacting an organic gallium compound with ammonia on a substrate such as sapphire or silicon wafer.
  • the wafer is kept between 500°C and 1200°C. Therefore, the heater assembly is generally heated to between 1000°C and 2200°C to reach the wafer processing temperature. For example, many process parameters such as pressure and gas flow rate also need to be controlled to achieve the desired crystal growth process.
  • the wafer can be cut into individual components.
  • the substrate carrier in the MOCVD reactor is usually loaded with multiple substrates at the same time to improve processing efficiency. This makes the heating system of the substrate carrier face more severe challenges: it is necessary to ensure that the substrates in all areas on the surface of the substrate carrier are in an appropriate temperature range. Otherwise, the material grown on the substrate in the inappropriate temperature zone often has quality defects.
  • the current mass production of GaN MOCVD equipment is mainly used in the production of blue and green LEDs for lighting, and does not require high luminous wavelength uniformity.
  • the wavelength uniformity is less than 2nm.
  • the wavelength uniformity in a single display is generally required to be less than +/-2nm. Therefore, higher requirements for wavelength uniformity are required, and wavelength uniformity is required.
  • the temperature is less than 0.8nm or less, which is equivalent to that the surface temperature of the entire epitaxial wafer needs to be controlled at about +/-1°C during epitaxial growth at about 800°C. This puts forward higher requirements for the temperature control of the entire substrate carrying table and the fine adjustment of the local temperature field during the epitaxial growth process.
  • a heating device for heating a rotatable substrate carrying table, the substrate carrying table has a rotation axis (OO'), and the heating device is located below the substrate carrying table and is connected to the The substrate carrier is separated by a distance in the vertical direction, the heating device includes one or more first heaters and a plurality of auxiliary heaters, and the one or more first heaters are used for heating the upper substrate
  • the annular area of the bearing platform, the plurality of auxiliary heaters are located below the annular area, and the plurality of auxiliary heaters have different distances from the rotation axis, and are used to adjust the temperature of a local area in the annular area, so
  • Each of the one or more first heaters includes: two first connection posts; a first heating section connected to the two first connection posts for heating the substrate carrier, the first heating section It includes a plurality of arc-shaped heating sections and connecting parts for connecting different arc-shaped heating sections; each auxiliary heater includes: two auxiliary terminals; an auxiliary heating section connected
  • the area of the auxiliary heating section in each auxiliary heater is smaller than the area of any one of the arc-shaped heating sections.
  • the auxiliary heating section is below the first heating section.
  • the radial position of the auxiliary heater corresponds to a gap between adjacent first arc heating sections or between adjacent first heaters.
  • the radial position of the first group of auxiliary heaters in the auxiliary heater corresponds to the gap between adjacent arc-shaped heating sections or between adjacent first heaters.
  • the radial position of the second group of auxiliary heaters corresponds to the first arc-shaped heating section.
  • the first group of auxiliary heaters and the second group of auxiliary heaters are respectively located on both sides of the rotation axis (OO').
  • the radial width of at least one auxiliary heater is less than or equal to the width of the gap between adjacent first arc-shaped heating sections.
  • the radial width of at least one auxiliary heater is less than or equal to half of the radial width of the annular region.
  • an auxiliary heating zone is provided between a plurality of opposite connecting parts of the same first heating section or between a plurality of opposite connecting parts of different first heating sections, and the auxiliary heater is located in the auxiliary heating zone.
  • the area of the auxiliary heating zone is less than 1/10 of the area of the substrate carrying platform.
  • the auxiliary heater includes a first auxiliary heater and a second auxiliary heater, and the distance from the first auxiliary heater to the axis of rotation (OO') is greater than the distance from the second auxiliary heater to the second auxiliary heater.
  • the distance from the axis of rotation (OO'), and the number of the first auxiliary heaters is greater than or equal to the number of the second auxiliary heaters.
  • the heating power of the first heater is more than 10 times the heating power of the auxiliary heater.
  • the auxiliary heater includes a first auxiliary heater and a second auxiliary heater, and the distance from the first auxiliary heater to the axis of rotation (OO') is greater than the distance from the second auxiliary heater to the second auxiliary heater.
  • the distance of the axis of rotation (OO'), and the heating power of the first auxiliary heater is greater than that of the second auxiliary heater.
  • the arc-shaped heating section includes a first arc-shaped heating section and a second arc-shaped heating section, and the distance from the first arc-shaped heating section to the rotation axis (OO') is greater than that of the second arc The distance from the arc-shaped heating section to the axis of rotation (OO'), and the arc length of the first arc-shaped heating section is greater than the arc length of the second arc-shaped heating section.
  • the heating device further includes a heat insulation ring, which surrounds the auxiliary heater and is used to insulate heat radiation from the first heating section to the auxiliary heater.
  • the heating device further includes a second heater, the second heater includes two second wiring posts, and the second heating section of the second heater is located at the periphery of the annular area.
  • the cross-sectional area of the first terminal is greater than 3 times the cross-sectional area of the auxiliary terminal.
  • a MOCVD equipment including: an airtight reaction chamber; a rotatable substrate carrying table arranged in the reaction chamber, for fixing the substrate on its upper surface;
  • the heating power of different heaters and multiple auxiliary heaters is independently controllable.
  • the heating device includes a heat-insulating shielding plate underneath the heat-insulating shielding plate, a liquid-cooling pipe is fixed under the heat-insulating shielding plate, so that there is a low temperature area under the heat-insulating shielding plate, and the first terminal and the auxiliary terminal Pass the heat insulation shielding plate to reach the low temperature area below.
  • a heating device for heating a rotatable substrate carrying table, the heating device being located under the substrate carrying table and separated from the substrate carrying table in a vertical direction.
  • the substrate carrier has an axis of rotation (OO')
  • the heating device includes at least one continuous first heater and a plurality of auxiliary heaters
  • the first heater includes: two first terminals ;
  • the first heating section connected to the two terminal posts is used to heat the substrate carrier, and the first heating section includes a plurality of first arc heating sections and for connecting different first arc heating sections
  • the connecting portion the distance from the nearest end of the first arc-shaped heating section to the axis of rotation (OO') is recorded as S min , and the most distal end of the first arc-shaped heating section to the axis of rotation (OO') Denoted as S max , the distance from the auxiliary heater to the axis of rotation (OO') is in the interval [S min , S max ], and each auxiliary heater includes: two auxiliary heater
  • the "closest end” of the arc-shaped heating section refers to the inner edge of the arc-shaped heating section closest to the axis of rotation. "The most distal end” refers to the outer edge of the arc-shaped heating section furthest away from the axis of rotation.
  • an auxiliary heater for MOCVD equipment comprising a rotatable substrate carrier having a rotation axis (OO') and a first heater, the first heater
  • the heater and the auxiliary heater are located under the substrate carrying table and separated from the substrate carrying table in a vertical direction, and the first heater is used for heating the annular area of the upper substrate carrying table,
  • the auxiliary heater is located below the annular area, and the auxiliary heater has different distances from the axis of rotation for adjusting the temperature of a local area in the annular area
  • the first heaters each include: two A first connection post; and a first heating section connected to the two first connection posts for heating the substrate carrier, the first heating section including a plurality of arc heating sections and for connecting different arcs The connecting part of the shaped heating section.
  • the auxiliary heater includes: two auxiliary connection posts; and an auxiliary heating section connected to the two connection posts for heating the substrate carrying table.
  • the radial position of the auxiliary heater corresponds to a gap between adjacent first arc heating sections or between adjacent first heaters.
  • the auxiliary heater is at least partially surrounded by a heat insulation ring, and the heat insulation ring is used to insulate heat radiation from the first heating section to the auxiliary heater.
  • a heating device for heating a rotatable substrate carrying table, the substrate carrying table has a rotation axis (OO'), and the heating device is located below the substrate carrying table and A distance from the substrate carrier in the vertical direction, the heating device includes a main heater and a plurality of auxiliary heaters, the main heater is used to heat the upper substrate carrier, the plurality of auxiliary heaters The distance between the heater and the axis of rotation (OO') is different, and each of the plurality of auxiliary heaters is used to independently adjust the local temperature in the area heated by the main heater.
  • a MOCVD equipment including: an airtight reaction chamber; a rotatable substrate carrying table arranged in the reaction chamber, for fixing the substrate on its upper surface;
  • a method for semiconductor processing using the MOCVD equipment as described above which is characterized in that it includes: placing the substrate on the substrate carrier, activating the main heater, and performing the substrate Process treatment; detect the process parameter distribution on the surface of the substrate; adjust the auxiliary heater to achieve the desired process parameter distribution.
  • an auxiliary heater for MOCVD equipment comprising a rotatable substrate carrier having a rotation axis (OO') and a first heater, the first heater
  • the heater and the auxiliary heater are located under the substrate carrying table and separated from the substrate carrying table in a vertical direction, and the first heater is used for heating the annular area of the upper substrate carrying table,
  • the auxiliary heater is located below the annular area, and the auxiliary heater has different distances from the axis of rotation for adjusting the temperature of a local area in the annular area
  • the first heaters each include: two A first terminal; and a first heating section connecting the two first terminals for heating the substrate carrier, the first heating section includes a plurality of arc heating sections and for connecting different arcs The connecting part of the shaped heating section.
  • an auxiliary heater for a MOCVD apparatus comprising a rotatable substrate carrier having a rotation axis (OO') and a main heater, the main heater And the auxiliary heater is located below the substrate carrying table and separated from the substrate carrying table in a vertical direction, the main heater is used for heating the upper substrate carrying table, and the auxiliary heater is The distance of the axis of rotation (OO') is different, and the auxiliary heater is used to independently adjust the local temperature in the area heated by the main heater.
  • FIG. 1 is a schematic structural diagram of a MOCVD equipment according to an embodiment of the present invention
  • Figures 2 and 3 are schematic views of the structure of a commonly used heating device for heating the substrate carrier;
  • 6 to 10 are schematic diagrams of other embodiments of the heating device.
  • the device/component of the present invention can be mainly applied to CVD equipment, especially the wafer holder (wafer holder, sometimes referred to as "substrate tray” in the industry) used to fix the substrate during the deposition process will rotate at a certain speed CVD equipment that rotates to improve deposition quality, such as MOCVD equipment.
  • the CVD equipment here should be understood more broadly, including epitaxial growth equipment.
  • FIG. 1 is a schematic diagram of the structure of a MOCVD equipment according to an embodiment of the present invention.
  • the MOCVD equipment 10 includes a reaction chamber 2 with an air inlet device 14 and an exhaust device 17, wherein the air inlet device 14 can be arranged on the top of the reaction chamber 2, and the exhaust device 17 can be arranged on the reaction chamber 2. bottom of.
  • the reaction chamber 2 has a top wall 22 at the top end, a bottom wall 24 at the bottom end, and a cylindrical side wall 26 extending between the top wall 22 and the bottom wall 24.
  • the top wall 22, the bottom wall 24 and the side wall 26 jointly enclose an airtight internal processing space 20, which can contain the gas emitted from the air intake device 14.
  • the illustrated reaction chamber 2 is cylindrical, other embodiments may also include reaction chambers having other shapes, such as conical or other surfaces of revolution, square, hexagonal, octagonal, or any other suitable shape.
  • the gas inlet device 14 is connected to a gas source for supplying processing gas used in the substrate processing process, processing gas such as carrier gas and reaction gas, and reaction gas such as metal organic compound and source material of group V metal elements.
  • processing gas such as carrier gas and reaction gas
  • reaction gas such as metal organic compound and source material of group V metal elements.
  • the carrier gas can be nitrogen, hydrogen, or a mixture of nitrogen and hydrogen. Therefore, the processing gas on the top surface of the substrate carrier can be mainly composed of nitrogen and/or hydrogen, with some The amount of reactive gas composition.
  • the air intake device 14 is configured to receive various gases and guide the processing gas to flow generally in a downward direction.
  • the air intake device 14 may also be connected to a cooling system configured to circulate liquid through the gas distribution element to keep the temperature of the element at a desired temperature during operation.
  • a similar cooling device (not shown) may be provided in order to cool the walls of the reaction chamber 2 (including the top wall 22, the bottom wall 24 and the side walls 26).
  • the exhaust device 17 is arranged to exhaust gas (including exhaust gas generated by the reaction and part of the gas that will participate in the reaction in the future) from the internal processing space 20 of the reaction chamber 2.
  • the exhaust device 17 includes a gas outlet 70 arranged at or near the bottom of the reaction chamber 2 and a pump 18 or other vacuum source arranged outside the reaction chamber 2 and communicating with the gas outlet 70 for providing gas flow power.
  • the reaction chamber 2 is also provided with a substrate inlet and outlet 30 for the substrate to be moved in and out, and a ring-shaped reaction chamber lining 34 arranged next to the side wall 26 and capable of moving up and down along the side wall 26.
  • the reaction chamber liner 34 has a closed position located above and an open position located below. After the substrate processing is completed, the reaction chamber lining 34 can be moved down (to be in the open position) to expose the substrate inlet and outlet 30, and then the substrate can be removed from the substrate inlet and outlet 30. The next batch of substrates to be processed can also be moved in from the substrate inlet and outlet 30.
  • the reaction chamber lining 34 can be moved up (to be in the closed position) to cover the substrate inlet and outlet 30, thereby separating the internal processing space 20 from the substrate inlet and outlet 30.
  • the area defined by the reaction chamber lining 34 is a symmetrical circle, and the substrate inlet and outlet 30 are "hidden" behind the reaction chamber lining 34 so that they will not come into contact with the processing gas.
  • the area that the gas can reach is the circumferential boundary defined by the lining 34 in the reaction chamber, which ensures the uniformity of the entire processing environment.
  • the driving mechanism (not shown) used to control and drive the up and down movement of the lining 34 in the reaction chamber may be any type of drive, such as a mechanical, electromechanical, hydraulic or pneumatic drive.
  • reaction chamber liner 34 is cylindrical, other embodiments may include reaction chamber liners having other shapes, including, for example, square, hexagonal, octagonal, or any other suitable shape.
  • the reaction chamber 2 is also provided with a rotatable shaft 44, a substrate carrying table 40 mounted on the top of the shaft 44 and rotatable with the shaft 44, a loading mechanism (not shown), a heating device 46, and the like.
  • the rotating shaft 44 is connected to a rotation driving mechanism (not shown) such as a motor driver, and is arranged to rotate the rotating shaft 44 around its central axis.
  • the rotating shaft 44 may also be provided with an internal cooling passage (not shown) extending substantially along the axial direction of the rotating shaft.
  • the internal cooling channel may be connected to a cooling source, so that the fluid coolant can be circulated by the cooling source through the cooling channel and returning to the cooling source.
  • reaction chamber 2 may also be provided with a rotating drum, and the edge portion of the substrate carrying table is erected on the circumference of the opening of the rotating drum, and when the rotating drum rotates, the substrate carrying table is driven to rotate together.
  • the arrangement of the rotary drive mechanism is as described above, and will not be repeated.
  • the substrate carrying table 40 is substantially in the shape of a disc, and may be made of a material (such as graphite, silicon carbide or other heat-resistant materials) that does not pollute the MOCVD process and can withstand the temperature experienced by the process.
  • a plurality of substantially circular substrate holding accommodating parts are provided in the upper surface of the substrate carrying table 40, and each substrate holding accommodating part is suitable for holding a substrate W.
  • the substrate carrier 40 may have a diameter of about 500 mm to about 1000 mm.
  • the loading mechanism (not shown) can move the substrate carrying table 40 from the substrate inlet and outlet 30 into the reaction chamber 2 and install the substrate carrying table 40 on the top of the rotating shaft 44; it can also make the substrate carrying table 40 and the rotating shaft 44 Detach and move out of the reaction chamber 2 from the substrate inlet 30.
  • the heating device 46 is usually arranged on the heat insulation shield 49 under the substrate carrying table 40, and mainly radiates heat to the bottom surface of the substrate carrying table 40.
  • the heat applied to the bottom surface of the substrate carrier 40 can flow upward through the substrate carrier 40 to be transferred to the bottom surface of each substrate W, and through the substrate W to the top surface of the substrate W.
  • a liquid-cooling pipe is fixed under the heat insulation shielding plate 49, so that there is a low temperature area under the heat insulation shielding plate 49, and the first terminal and auxiliary terminals for inputting power of the heating device pass through the heat shielding plate 49 to reach Low temperature area below.
  • Heat can also be radiated from the top surface of the substrate carrier 40 and the top surface of the substrate W to the cooler elements of the reaction chamber 2, such as the side wall 26 of the reaction chamber 2 and the air inlet device 14. Heat can also be transferred from the top surface of the substrate carrier 40 and the top surface of the substrate W to the processing gas flowing over these surfaces.
  • the reaction chamber 2 also includes an outer liner 28 to reduce the infiltration of the processing gas into the area containing the heating device 46 in the reaction chamber.
  • a heat shield (not shown) may be provided under the heating device 46, for example, in parallel with the substrate carrier 40 to help guide heat from the heating device 46 upward toward the substrate carrier 40 Instead of passing down towards the bottom wall 24 at the bottom of the reaction chamber 2.
  • FIG. 2 and 3 are schematic diagrams of the structure of a commonly used heating device, which can be applied to the MOCVD equipment shown in FIG. 1 to obtain a more uniform temperature throughout the upper surface of the substrate carrier.
  • Figure 2 due to the limitation of the page width, Figure 2 only shows the half structure of the substrate carrying table 40' and the heating device. Both the substrate carrying table 40' and the heating device have an axisymmetric structure, so the display This half of the structure can roughly clearly reveal the structure of the heating device and the relative positional relationship between the heating device and the substrate carrier 40') as shown in FIG.
  • the heating device is located under the substrate carrier 40' and is connected to the The substrate carrying table 40' is separated by a certain distance in the vertical direction, and the substrate carrying table 40' is heated in a radiant manner, and the heating device includes a continuous heater 46'.
  • the “continuous” heater referred to here and hereinafter in this patent document refers to the fact that the heating parts distributed in each area of a single heater and used to convert electrical energy into heat are electrically connected as a whole. The heater Just connect a power supply to fully work.
  • the heater 46' is located in the same plane as a whole, and includes two terminals m'and n'and a heating section. Among them, the two terminals m'and n'are used to electrically connect electrodes of a heating power source (not shown) so that the heating power source can be applied to the heater 46'.
  • the heater is used to connect the two connecting posts m'and n', and includes a plurality of arc-shaped heating sections a', b', c', d', e', and f'distributed in concentric circles, and are used to connect The connecting portion p'of adjacent arc-shaped heating sections.
  • the centers of the arc heating sections a', b', c', d', e'and f'are all located on the rotation axis OO' of the substrate carrier 40'.
  • one method is to provide multiple heaters 46', each of which covers only a small area and is electrically connected to an independent heating power source. That is to say, multiple heating areas are divided, for example, 3 or 4 areas, and when the temperature of a certain area needs to be adjusted, only the heating power of the corresponding heater needs to be adjusted. Generally speaking, the smaller the area covered by each heater, the more obvious the improvement effect.
  • this solution requires the addition of several or more heating power sources, which significantly increases the cost.
  • the wiring connection between the heater and the heating power source has become complicated, and the automatic control of the heating power source power by the controller has also become difficult.
  • Another method is to provide at least two arc-shaped heating sections in the heater 46'—the first arc-shaped heating section and the second arc-shaped heating section.
  • the resistivities per unit length of the two are not equal (for example, through Change the width of the arc heating section c to achieve). This disparity is to improve the temperature uniformity of each area of the substrate stage 40'.
  • this method has the following shortcomings: (1) To obtain a uniform temperature distribution, a different heating section must be replaced. The replacement of the heating section can only be completed when the machine is shut down, and it is impossible to adjust the temperature distribution in the local area in real time during the process; (2) Every time the temperature distribution is modified, a new set of heaters must be reprocessed. And it needs to be tested and optimized before it can be finalized. This undoubtedly increases the cost and lengthens the production cycle.
  • the creator of the present invention is dedicated to improving the above-mentioned drawbacks.
  • the creator found that when processing the substrate, the heater is fixed on the heat shielding plate, and the substrate carrier above the heater is rotating along the rotation axis OO'.
  • the heating track of the heater is a circle with the distance from the heater to the axis of rotation as the radius. Since the heater has a radial width, its actual heating area is an annular area.
  • the area heated by each arc-shaped heating section is also a ring area, and the inner half of the ring area corresponds to the distance from the radially inner boundary of the arc-shaped heating section to the axis of rotation.
  • the half length corresponds to the distance from the radially outer boundary of the arc-shaped heating section to the axis of rotation.
  • the heating area of the connecting portion is also an annular area, and the heating area basically covers the radial gap area between adjacent arc-shaped heating sections. Therefore, when a low-power auxiliary heater is installed on the heat shielding plate, the auxiliary heater can adjust the temperature of the ring area where it is located.
  • the ring area is roughly the distance from the auxiliary heater to the axis of rotation. The area near the circumference of the radius.
  • the first heater is used to control the heating temperature of the substrate carrier due to its larger heating area, and the auxiliary heater is based on its location.
  • the position can be used to continuously fine-tune the temperature of the ring area in real time to achieve the purpose of local temperature control.
  • the creator designed a heating device for heating a rotatable substrate carrier.
  • the substrate carrier has an axis of rotation (OO').
  • the heating device is located under the substrate carrier and is connected to the The substrate carrier is separated by a distance in the vertical direction, and the heating device includes one or more first heaters and a plurality of auxiliary heaters, and the one or more first heaters are used to heat the annular area of the upper substrate carrier ,
  • a plurality of auxiliary heaters are located below the annular area, and the plurality of auxiliary heaters have different distances from the axis of rotation, for adjusting the temperature of a local area in the annular area, one or more first heaters all include : Two first connecting posts; a first heating section connecting the two first connecting posts for heating the substrate carrier, the first heating section includes a plurality of arc heating sections and is used for connecting different arc heating
  • Each auxiliary heater includes: two auxiliary terminals; an auxiliary heating section connected to the two auxiliary terminals for heating the substrate carrier.
  • the annular area is defined as follows.
  • the axis of rotation (OO') perpendicularly passes through the center O of the substrate carrier, the inner radius of the annular area is denoted as S min , and the outer radius of the annular area is denoted as S max .
  • the distance from each auxiliary heater to the rotation axis OO' of the substrate carrier is in the interval [S min , S max ].
  • a plurality of arc-shaped heating sections are distributed around and below the substrate carrier.
  • the arc length of the outer arc-shaped heating section is greater than the arc length of the inner arc-shaped heating section.
  • the auxiliary heating section of the auxiliary heater is directly below the arc-shaped heating section, that is, the auxiliary heater is covered by the arc-shaped heating section.
  • the heating method of the auxiliary heater is to radiate heat to the first heater, and then to the lower surface of the substrate carrier.
  • the auxiliary heating section of the auxiliary heater is flush with the height of the arc-shaped heating section.
  • the height of the auxiliary heating section of the auxiliary heater is slightly lower than the height of the arc heating section. In these embodiments, the auxiliary heater is not covered by the arc heating section.
  • the auxiliary heater and the first heater are supplied with heating power from different heating power sources, so their output power can be independently controlled, so the heating effect can also be independently controlled. For example, their heating power differs by 10-100 times.
  • the projected area of the auxiliary heating section in the auxiliary heater on the substrate carrying table is much smaller than the projected area of the arc-shaped heating section on the substrate carrying table, for example, the difference is 10-20 times.
  • the projected area of the auxiliary heating section is smaller than the projected area of any arc heating section.
  • the auxiliary heater can heat the temperature in the vicinity of the circumference with the distance from the rotation axis OO' as the radius.
  • the auxiliary heaters are arranged at different distances from the axis of rotation OO' to heat the vicinity of the circumference with different distances as the radius. Therefore, the distance from the auxiliary heater to the axis of rotation OO' is set within the interval [S min , S max ], which enables the auxiliary heater to perform the required partial area in the entire circular heating area of the first heater. Fine adjustment of temperature. According to different needs, different numbers of auxiliary heaters can be set, and different distances from these auxiliary heaters to the rotation axis OO' can be set.
  • the distance from the auxiliary heater to the axis of rotation OO' can be set to any value in the interval [S min , S max ].
  • the auxiliary heater heats the temperature in the vicinity of the circle whose distance from the axis of rotation OO' is the radius, the auxiliary heater can be arranged at any position on the circle.
  • the auxiliary heaters do not have to be arranged in a straight line along the radial direction, and their radial arrangement may be arbitrary.
  • this application also proposes a heating device for heating a rotatable substrate carrying table, the substrate carrying table has a rotation axis (OO'), and the heating device is located on the substrate carrying table.
  • the heating device includes a main heater and a plurality of auxiliary heaters.
  • the main heater is used to heat the upper substrate carrier.
  • the auxiliary heaters have different distances from the axis of rotation (OO'), and each auxiliary heater of the plurality of auxiliary heaters is used to independently adjust the local temperature in the area heated by the main heater.
  • the main heater includes a main heating section, and the main heating section includes a plurality of arc heating sections.
  • the plurality of auxiliary heaters are used to heat the substrate carrying table and form a number of auxiliary annular heating zones with different distances from the rotation axis, and the temperature of the plurality of auxiliary annular heating zones can be independent Adjust to adjust the local temperature of the area heated by the main heater.
  • the vertical projection of the arc-shaped heating section on the substrate carrying table forms a first annular area
  • the vertical projection of at least one auxiliary heater on the substrate carrying table is at least Partly in the first annular area
  • the vertical projection of the gap between the adjacent arc-shaped heating sections on the substrate carrying table forms a second annular area, and at least one of the auxiliary heaters is on the substrate
  • the vertical projection on the bearing platform is at least partially in the second annular area.
  • FIG. 4 is a schematic top view of the heating device; Figures 5(a), 5(b) and 5(c) are taken along the radial lines aa', bb' and cc' of the substrate carrier in Figure 4, respectively For ease of understanding, these figures also show the relative position of the substrate carrier 40.
  • the heating device is located below the substrate carrying table 40 and separated from the substrate carrying table 40 in the vertical direction For a certain distance, the substrate carrier 40 is heated by radiation, and the heating device 46 includes a first heater 461 and an auxiliary heater 465.
  • the first heater 461 includes a plurality of arc-shaped heating sections and connecting parts, which will be described in detail below. In other embodiments, the first heater 461 may only include a plurality of arc-shaped heating sections without connecting parts.
  • Each auxiliary heater 465 includes: two auxiliary terminals 465a; and an auxiliary heating section 465b connecting the two terminals.
  • the heating device 46 includes two first heaters 461, and the number of arc heating sections of each first heater 461 is different from that of the heater 46' in FIG. 2 or FIG.
  • the heating sections of the first heater 461 are respectively marked as a to g from the inside to the outside, and the eight auxiliary heaters 465 are marked as A to H. It can be seen that the arc length of the outer heating section is greater than the inner arc length.
  • the distance from the inner edge of the innermost arc heating section a to the axis of rotation OO' is S min
  • the distance from the outer edge of the outermost arc heating section h to the axis of rotation OO' The distance is S max .
  • S min and S max are the inner and outer radii of the annular area.
  • the distances from the auxiliary heaters A to H to the rotation axis OO' are all within the interval [S min , S max ], that is, the auxiliary heaters 465 are all located below the annular area.
  • the auxiliary heaters 465 are arranged in sequence along the radial direction, and the height of the auxiliary heaters is consistent with the height of the arc heating sections a to h.
  • the auxiliary heaters 465 can also be randomly arranged in the radial direction, as long as each auxiliary heater 465 is below the annular area, that is, the distance to the rotation axis OO' is in the interval [S min , S max ].
  • the auxiliary heater 465 is directly below the arc-shaped heating sections a to h.
  • the radial position AD of the auxiliary heater corresponds to the gap between adjacent first arc-shaped heating sections or between adjacent first heaters.
  • the details are as follows, as shown in FIG. 5(a), the distance from the gap between the heating section in the first heater 461 and the adjacent heating section to the rotation axis OO' is schematically marked.
  • the distance between the heating section b, c and the rotation axis OO' is S g1
  • the distance between the heating section c, d and the rotation axis OO' is S g2
  • the heating section d is to the rotation axis
  • the distance from OO' is Sc1
  • the distance from the heating section e to the axis of rotation OO' is Sc2 .
  • the auxiliary heaters AD are arranged in such a way that their distance to the rotation axis OO' corresponds to the distance between the gap between adjacent heating sections and the rotation axis.
  • the distance from the auxiliary heater A to the rotation axis OO' corresponds to S g1
  • the distance from the auxiliary heater B to the rotation axis OO' corresponds to S g2
  • the arrangement relationship of the auxiliary heaters C and D is deduced by analogy.
  • Such an arrangement facilitates temperature adjustment above the gap between adjacent heating sections.
  • the area above the circumference of the arc-shaped heating section can be effectively heated, while the gap between the adjacent arc-shaped heating sections can only be heated by the connecting part because of the heating area of the connecting part. It is much smaller than the area of the heating section, so the upper part of the circumference where the gap is located cannot be effectively heated, and the connecting part and the arc-shaped heating section are connected into one body and cannot be independently heated, thus making the heating effect in the radial direction uneven.
  • the distance from the auxiliary heater AD to the rotation axis OO' corresponds to the distance between the gap between the adjacent heating sections and the rotation axis, and the auxiliary heater AD and the first heater 461 are powered separately, which It can effectively compensate for the heating effect above the circumference of the gap or adjust the temperature control of the area above the gap.
  • the distance from the auxiliary heater to the rotation axis OO' also corresponds to the gap between adjacent first heaters.
  • the phrase “radial” refers to a direction perpendicular to the rotation axis OO', and the heaters arranged in the radial direction may be located in the same plane or in different planes.
  • the phrase “the distance from the gap to the rotation axis OO'” refers to the distance from the radial center point of the gap to the rotation axis OO'.
  • the phrase “the distance from the auxiliary heater to the rotation axis OO'” refers to the distance from the radial center point of the auxiliary heater to the rotation axis OO'.
  • distance from the heating section to the axis of rotation OO' refers to the distance from the radial center point of the heating section to the axis of rotation OO'.
  • distance from the auxiliary heater to the rotating shaft is equal to the distance from the arc heating section of the first heater to the rotating shaft or the distance between the arc heating sections to the rotating shaft, or the auxiliary heater
  • the distance to the rotating shaft and the arc heating section of the first heater or the gap between the arc heating sections to the rotating shaft are within 5% of the distance, or the distance from the auxiliary heater to the rotating shaft is the same as the arc heating
  • the difference between the gap between the segments or arc-shaped heating segments and the distance from the rotation axis is less than or equal to 10mm, or less than or equal to 15mm, or less than or equal to 17mm.
  • the auxiliary heater 465 may also be arranged at other positions in the radial direction.
  • the distance from the auxiliary heater EH to the rotation axis OO' corresponds to the distance from the heating sections d, e, f, g to the rotation axis OO'.
  • the distance from the auxiliary heater E to the rotation axis OO' corresponds to Sc1
  • the distance from the auxiliary heater F to the rotation axis OO' corresponds to Sc2 ;
  • the arrangement relationship of the auxiliary heaters G and H is deduced by analogy.
  • the auxiliary heater thus arranged can adjust the area above the circumference where the arc-shaped heating section is located.
  • auxiliary heater A-H is only schematically indicated to the position of the rotation axis OO'.
  • the number, position and size of these auxiliary heaters can be changed according to the process and space requirements.
  • auxiliary heaters A-D or only auxiliary heaters E-H may be provided. These auxiliary heaters can be arranged on one side of the rotating shaft or arranged on both sides respectively.
  • the auxiliary heating section 465b of the auxiliary heater is a heating section reciprocatingly arranged in a serpentine shape along the tangential direction of the substrate carrier.
  • the overall width of the heating section in the radial direction is denoted as W.
  • the radial width W is less than or equal to the radial width ⁇ S c of the gap between adjacent heating sections (as shown in Fig. 5(a) and Fig. 5(b)). This arrangement enables the auxiliary heater to more accurately adjust the temperature above the circumference where the gap between the arc-shaped heating sections is located.
  • the radial width W of the at least one auxiliary heater is less than or equal to (S max ⁇ S min )/2, that is, less than or equal to half of the radial width of the annular area.
  • the auxiliary heating section 465b of the auxiliary heater may also have other shapes, for example, a serpentine reciprocating arrangement along the radial direction of the substrate carrier, or a spiral shape.
  • the heating power of the first heater 461 is greater than the heating power of the auxiliary heater 465 for adjusting the temperature in the heating region of the first heater 461.
  • the heating power of the first heater 461 is more than 10 times the heating power of the auxiliary heater 465, such as 20 times, 30 times, 100 times, and so on.
  • the heating power of the first heater 461 can reach 100 kW, and the heating power of the auxiliary heater 465 is about 1000 W.
  • the heating power of the auxiliary heater 465 with a larger distance to the rotation axis OO' is smaller than that of the auxiliary heater 465 with a smaller distance to the rotation axis OO'.
  • the heating power of the heater 465 is large.
  • the heating power of the auxiliary heater C is greater than the heating power of the auxiliary heater B; the heating power of the auxiliary heater B is greater than the heating power of the auxiliary heater A.
  • an auxiliary heating zone is provided between the plurality of opposite connection parts P of the plurality of first heating sections 461, and the auxiliary heater 465 is located in the auxiliary heating zone.
  • the area of the auxiliary heating zone is less than 1/10 of the area of the substrate carrier.
  • the auxiliary heating zone may be arranged between a plurality of opposite connecting parts P of the continuous arc-shaped heating section.
  • Fig. 6 shows a schematic structural diagram of a heating device according to another embodiment of the present invention.
  • the difference from the embodiment shown in Fig. 4 is that in this embodiment, different numbers of auxiliary heaters 465 are provided on the circumferences with different distances from the rotation axis OO'. More auxiliary heaters 465 are arranged on the outer circumference than on the inner circumference. This is because the heating area on the outer circumference is larger, and more auxiliary heaters 465 are required for temperature adjustment.
  • Fig. 7 shows a schematic structural diagram of a heating device according to another embodiment of the present invention.
  • the auxiliary heater 465 further includes a heat insulation ring 465c, which is arranged around the auxiliary heating section to effectively isolate The heat radiation of the first heating section 461 enables the heating heat of the auxiliary heater to be effectively applied to the substrate carrier, and the temperature adjustment of the auxiliary heater is more accurate.
  • Fig. 8 shows a schematic structural diagram of a heating device according to another embodiment of the present invention.
  • the heating device 46 may further include a second heater 462, and both ends of the second heater 462 are electrically connected to electrodes of another heating power source (not shown).
  • the second heater 462 is located on the outer periphery of the first heater 461 and surrounds the first heater 461 for heating the outermost edge area of the substrate carrier 40.
  • the second heater 462 may have a single-turn or multiple-turn arc structure, or a 1/2 or 1/4 arc structure.
  • the thickness and material of the second heater 462 may be the same as the first heater 461.
  • the width of the second heater 462 can be much smaller than the width of the first heater 461 to provide higher heating power.
  • the first heater 461 and the second heater 462 are powered by different heating power sources (not shown), so they can be independently controlled without interfering with each other.
  • the second heater 462 and the first heater 461 may be arranged in the same plane, as shown in FIG. 8.
  • the auxiliary heater 465 is similar to the auxiliary heater in FIGS. 5 to 7, and the difference lies in the arrangement of the auxiliary heating sections in the auxiliary heater 465.
  • the auxiliary heating sections are arranged reciprocatingly in the radial direction, while the auxiliary heating sections of the auxiliary heaters in Figs. 5 to 7 are arranged reciprocatingly in the circumferential direction.
  • Fig. 9 shows a schematic structural diagram of a heating device according to another embodiment of the present invention.
  • the heating device 46 may also include a variety of different first heaters, for example, a first heater 461 and a first heater 463.
  • the two ends of the first heater 463 are connected to another heating power source (not shown).
  • the electrodes shown) are electrically connected.
  • the first heater 463 is located below the central area of the substrate carrier.
  • the specific structure of the first heater 463 is similar to the first heater 461, and includes a heating section including a plurality of arc-shaped heating sections and connecting parts for connecting different arc-shaped heating sections.
  • the thickness and material of the first heater 463 may be the same as those of the first heater 461.
  • the width of the first heater 463 may be much smaller than the width of the first heater 461 to provide higher heating power.
  • the first heater 463 is used to independently control the temperature of the central area of the substrate stage.
  • the first heater, the second heater, and the auxiliary heater in the heating device of the present invention are described above, and those skilled in the art can also think of providing other heaters or heating sections.
  • these heaters can be heated by inductance or resistance.
  • the heating power of the first heater, the second heater and the auxiliary heater in the present invention are independently controllable. For example, they are supplied by different heating power sources.
  • the heating power of these heaters and auxiliary heaters is supplied by the same heating power source, and the power output of the same heating power source is divided into multiple channels, which supply different heaters and auxiliary heaters respectively, and distribute them to the heating of each channel The power can be adjusted.
  • the heating device 46 includes a first heater 461 and/or a second heater 462 and an auxiliary heater 465.
  • the first heater 461 and the second heater 462 serve as the main heater of the present invention for heating the substrate carrier.
  • the auxiliary heater is used to heat the substrate carrying table and form several auxiliary annular heating zones with different distances from the rotation axis OO' of the substrate carrying table. The temperature of the several auxiliary annular heating zones can be adjusted independently to adjust the The local temperature of the area heated by the main heater.
  • Fig. 10 shows a schematic structural diagram of a heating device according to another embodiment of the present invention.
  • the heating device is located under the substrate carrier, and the heating device includes main heaters 461 and 462 and an auxiliary heater 465.
  • the main heaters 461 and 462 are used to heat the upper substrate carrier.
  • a plurality of auxiliary heaters 465 are distributed along the radial direction of the substrate carrier to the rotation axis OO' of the substrate carrier.
  • Each auxiliary heater 465 Used to independently adjust the local temperature in the area heated by the main heaters 461 and 462.
  • a plurality of auxiliary heaters 465 are arranged in a straight line along the radial direction of the substrate carrier, as shown in FIG. 10.
  • the plurality of auxiliary heaters 465 may also be discretely arranged at any azimuth along the radial direction of the substrate carrier.
  • the auxiliary heaters 465 are arranged staggered along the radial direction, or the trajectory of the auxiliary heaters 465 arranged along the radial direction is an arc.
  • the auxiliary heater can also be arranged between the two main heaters 462 on the outermost ring. The main heaters 461 and 462 and the auxiliary heater 465 are arranged on the same plane.
  • the main heaters 461 and 462 and the auxiliary heater 465 may also be arranged on different planes, that is, the distance between the main heaters 461 and 462 and the substrate carrier is different from the auxiliary heater 465.
  • the auxiliary heater 465 can also be arranged directly below the main heaters 461 and 462, that is, the vertical projection of the auxiliary heater 465 to the substrate carrier overlaps or at least the vertical projection of the main heater to the substrate carrier. Partially overlapped.
  • the main heater 461 includes a plurality of arc-shaped heating sections 461a, 461b, 461c, and the plurality of arc-shaped heating sections 461a, 461b, 461c have connecting portions between them to connect the arc-shaped heating sections. segment.
  • the vertical projection of the arc-shaped heating section 461a on the substrate carrier forms the first annular area 501
  • the vertical projection of the auxiliary heater 465a on the substrate carrier is at least partially The ground is in the first annular region 501, so that the auxiliary heater 465a mainly adjusts the temperature in the first annular region 501.
  • the auxiliary heater 465a is located in the first annular area 501, so that the auxiliary heater 465a can effectively adjust the temperature of the local area.
  • the radial center of the auxiliary heater 465a may deviate from the radial center of the first annular region 501 by a certain distance in the radial direction, and the distance range is less than 20 mm, optionally, less than 15 mm, or less than 10 mm. This application does not limit this, and it depends on the situation.
  • the vertical projection of the gap on the substrate carrier forms a second annular area 502, which assists The vertical projection of the heater 465b on the substrate carrier is at least partially in the second annular area 502, so that the auxiliary heater 465b mainly adjusts the temperature in the second annular area 502.
  • the auxiliary heater 465b is located in the second annular area 502, so that the auxiliary heater 465b can effectively adjust the temperature of the local area.
  • the radial center of the auxiliary heater 465b may deviate from the radial center of the second annular region 502 by a certain distance in the radial direction, and the distance range is less than 20 mm, optionally, less than 15 mm, or less than 10 mm.
  • the present invention does not limit this, and it depends on the situation.
  • the auxiliary heaters 465 are divided into two groups.
  • the vertical projections of the four auxiliary heaters in the first group on the substrate carrier are respectively the ones formed by the vertical projections of the main heating section on the substrate carrier.
  • the vertical projections of the four auxiliary heaters of the second group on the substrate carrying table are respectively located in a plurality of annular areas formed by the vertical projections of the gaps between adjacent main heating sections on the substrate carrying table.
  • Two sets of auxiliary heaters are respectively arranged on both sides of the tray rotation axis (OO'). The present invention does not limit this, and it depends on the situation.
  • the heating device further includes a driving device connected to the auxiliary heater, and the driving device drives any auxiliary heater to move along the radial direction of the substrate carrier or along the rotation axis (OO') direction to move according to The actual process needs to adjust the different local temperatures of the substrate carrier.
  • a driving device connected to the auxiliary heater, and the driving device drives any auxiliary heater to move along the radial direction of the substrate carrier or along the rotation axis (OO') direction to move according to The actual process needs to adjust the different local temperatures of the substrate carrier.
  • the heating device further includes a power controller connected to the auxiliary heater, and the power controller is used to adjust the heating power of any auxiliary heater to adjust different local temperatures of the substrate carrier according to actual process requirements.
  • the auxiliary heater 465 and the main heaters 461 and 462 have different heating power.
  • the actual heating power of the main heaters 461 and 462 is more than 15 times or more than 20 times the actual heating power of the auxiliary heater.
  • the main heaters 461 and 462 may be heated by inductance and/or resistance.
  • the auxiliary heater 465 may also be heated by inductance and/or resistance.
  • inductive heating includes RF coil heating; resistance heating includes heating chip heating, heating wire heating or lamp tube heating.
  • the material of the arc heating section and the connecting part in the main heaters 461, 462 may include refractory metals, graphite, tungsten, molybdenum, rhenium, tantalum, niobium, zirconium, or combinations or alloys thereof, superalloy materials, silicon carbide, etc. .
  • the surfaces of the arc heating section and the connecting part and the auxiliary heating section may be at least partially covered with refractory metals or alloys, boron nitride, tantalum carbide, silicon carbide and other high temperature resistant coating materials.
  • the heater component After the heater component is used for a long time, related components such as heat shield, heating plate support, conductive support, etc. will deposit reaction products or material crystal grains will become larger, which will cause the material properties to change, affect the work performance of the heater, and cause the MOCVD process performance Drift, increase instability, need to replace heater parts to solve the problem.
  • the components of the MOCVD reaction chamber After long-term use, the components of the MOCVD reaction chamber will also undergo aging and surface modification, which will cause changes in the heater radiation heating environment, which will cause the MOCVD process performance to drift, requiring real-time adjustment of process parameters and frequent cleaning and maintenance of the reaction chamber.
  • the present disclosure can adjust the power of the auxiliary heater to compensate for changes in temperature distribution without replacing the arc heating section of the main heater, which is simple and convenient, saves costs, and improves the utilization rate of the machine.
  • the usual practice is to use different specifications of the main heating section corresponding to different temperature distributions, and a set of main heating sections must be replaced when replacing a substrate carrier.
  • the invention can fine-tune the power output of the auxiliary heater to adapt to different temperature distribution requirements without changing the specifications of the main heating section. It has the advantages of strong adaptability, good adjustment performance and high adjustment accuracy.
  • the local temperature distribution can be adjusted more accurately by changing the relative positions of the auxiliary heating section, the main heating section and the substrate carrier.
  • the present invention also discloses a method for semiconductor process processing using the above MOCVD equipment.
  • the method includes: placing the substrate on the substrate carrying table, starting the main heater, and performing the substrate processing; the process of detecting the surface of the substrate Parameter distribution; adjust the auxiliary heater to achieve the desired process parameter distribution.
  • the process parameters include the temperature of the substrate surface and/or the wavelength of heat radiation.
  • Adjusting the auxiliary heater may include any of the following: moving the auxiliary heater along the radial direction of the substrate carrier, moving the auxiliary heater along the rotation axis (OO') direction, and adjusting the heating power of the auxiliary heater.

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Abstract

本发明提供了一种用于加热可旋转基片承载台的加热装置，用以改善基片承载台上表面各区域的温度均匀性。该基片承载台具有旋转轴线，该加热装置位于基片承载台下方并与基片承载台在竖直方向上相隔一距离，加热装置包括一个或多个第一加热器以及多个辅助加热器，一个或多个第一加热器用于加热上方基片承载台的环形区域，多个辅助加热器处于所述环形区域下方，且所述多个辅助加热器与旋转轴线具有不同的距离，用于调节所述环形区域中局部区域的温度。

Description

加热装置、包括该加热装置的CVD设备 技术领域
本发明涉及一种加热装置，还涉及包括该加热装置的化学气相沉积(CVD)设备。
背景技术
许多半导体元件通过化学气相沉积(CVD)的方式将半导体材料外延生长在基片上，上述基片基本上是圆盘状的多晶硅材料，一般称为晶圆。在进行此制程时，晶圆会维持高温且暴露在一种或多种化学前驱物的环境中，上述前驱物可以是在基片表面上进行反应或分解，产生符合期待的沉积物。用于化学气相沉积的前驱物一般包括金属，例如金属氢化物、卤化物、卤元素氢化物和有机金属化合物。上述前驱物会与例如为氮气的载气结合，但是并不产生明显的反应，上述载气及不需要的副产物可以通过反应室的出气口排出。
利用金属有机化学气相沉积(MOCVD)可以连续生成半导体化合物层，借以制作由三五族半导体材料形成的元件。三五族半导体材料包括发光二极管(LEDs)及其它例如是激光二极管、光学传感器及场效应晶体管的高效能晶片。在例如为蓝宝石或硅晶圆的基片上借由将有机镓化合物与氨进行反应，可以形成这种元件。在沉积氮化镓及相关化合物时，晶圆会保持在500℃至1200℃之间，因此一般会将加热器组件加热到1000℃至2200℃之间，借以达到晶圆制程温度。例如为压力及气体流速的许多制程参数也需控制，借以达到符合期待的晶体生长过程。在形成所有的半导体层之后，及在电性接点通过电性测试后，晶圆可以切割成单独的元件。
MOCVD反应器内的基片承载台上通常会同时装载多个基片，以提高加工效率。这使得基片承载台的加热系统面临着更严苛的挑战：必须保证基片承载台表面所有区域的基片都处于适当的温度范围。否则，处 于不适当温度区域的基片上生长出的材料往往存在质量缺陷。
目前的氮化镓量产MOCVD设备主要应用于照明用蓝绿光LED的生产，对发光波长均匀性要求不高，一般波长均匀性小于2nm即可。但随着Mini-LED及Micro-LED在高端显示上的应用前景，单一显示器内一般要求波长均匀性小于+/-2nm，因此，对波长的均匀性也提出了更高的要求，需要波长均匀性小于0.8nm或更小，等同于在约800℃外延生长时整个外延片表面温度需要控制在约+/-1℃。这对外延生长过程中整个基片承载台温度的控制及对局部温场的细微调整提出了的更高需求。
发明内容
根据本发明的一个方面，提供了一种用于加热可旋转基片承载台的加热装置，所述基片承载台具有旋转轴线(OO’)，所述加热装置位于基片承载台下方并与所述基片承载台在竖直方向上相隔一距离，所述加热装置包括一个或多个第一加热器以及多个辅助加热器，所述一个或多个第一加热器用于加热上方基片承载台的环形区域，所述多个辅助加热器处于所述环形区域下方，且所述多个辅助加热器与旋转轴线具有不同的距离，用于调节所述环形区域中局部区域的温度，所述一个或多个第一加热器均包括：两个第一接线柱；连接所述两个第一接线柱的第一加热段，用于加热所述基片承载台，所述第一加热段包括多个弧形加热段以及用于连接不同弧形加热段的连接部；每个辅助加热器包括：两个辅助接线柱；连接所述两个辅助接线柱的辅助加热段，用于加热所述基片承载台。
可选地，每个所述辅助加热器中的辅助加热段的面积小于任一个所述弧形加热段的面积。
可选地，所述辅助加热段在所述第一加热段的下方。
可选地，所述辅助加热器的径向位置对应于相邻第一弧形加热段之间或者相邻第一加热器之间的间隙。
可选地，所述辅助加热器中的第一组辅助加热器的径向位置对应于相邻弧形加热段之间或者相邻第一加热器之间的间隙，所述辅助加热器中的第二组辅助加热器的径向位置对应于所述第一弧形加热段。
可选地，所述第一组辅助加热器和所述第二组辅助加热器分别位于所述旋转轴线(OO’)的两侧。
可选地，至少一个所述辅助加热器的径向宽度小于等于相邻第一弧形加热段之间的间隙的宽度。
可选地，至少一个所述辅助加热器的径向宽度小于等于所述环形区域的径向宽度的一半。
可选地，在同一第一加热段的多个相对连接部之间或者不同第一加热段的多个相对连接部之间设置辅助加热区，所述辅助加热器位于所述辅助加热区中。
可选地，所述辅助加热区的面积小于所述基片承载台的面积的1/10。
可选地，所述辅助加热器包括第一辅助加热器和第二辅助加热器，所述第一辅助加热器到所述旋转轴线(OO’)的距离大于所述第二辅助加热器到所述旋转轴线(OO’)的距离，且所述第一辅助加热器的个数大于等于所述第二辅助加热器的个数。
可选地，所述第一加热器的加热功率是所述辅助加热器的加热功率的10倍以上。
可选地，所述辅助加热器包括第一辅助加热器和第二辅助加热器，所述第一辅助加热器到所述旋转轴线(OO’)的距离大于所述第二辅助加热器到所述旋转轴线(OO’)的距离，且所述第一辅助加热器的加热功率大于所述第二辅助加热器。
可选地，所述弧形加热段包括第一弧形加热段和第二弧形加热段，所述第一弧形加热段到所述旋转轴线(OO’)的距离大于所述第二弧形加热段到所述旋转轴线(OO’)的距离，且所述第一弧形加热段的弧长度大于所述第二弧形加热段的弧长度。
可选地，所述加热装置还包括隔热圈，所述隔热圈围绕所述辅助加热器，用于隔绝所述第一加热段对于所述辅助加热器的热辐射。
可选地，所述加热装置还包括第二加热器，所述第二加热器包括两个第二接线柱，所述第二加热器的第二加热段位于所述环形区域的外围。
可选地，所述第一接线柱的横截面积大于辅助接线柱横截面积的3 倍。
根据本发明的另一个方面，提供了一种MOCVD设备，包括：气密的反应室；设置在所述反应腔内并可转动的基片承载台，用于固定基片于其上表面；位于基片承载台下方并与基片承载台在竖直方向上相隔一段距离的如上所述的加热装置，用于加热所述基片承载台。
可选地，不同加热器以及多个辅助加热器的加热功率独立可控。
可选地，所述加热装置下方包括隔热屏蔽板，所述隔热屏蔽板下方固定有液冷管道，使得隔热屏蔽板下方具有一低温区域，所述第一接线柱和辅助接线柱穿过所述隔热屏蔽板到达下方低温区域。
根据本发明的另一个方面，提供了一种用于加热可旋转基片承载台的加热装置，所述加热装置位于基片承载台下方并与所述基片承载台在竖直方向上相隔一段距离，所述基片承载台具有旋转轴线(OO’)，所述加热装置包括至少一个连续的第一加热器以及多个辅助加热器，所述第一加热器包括：两个第一接线柱；连接所述两个接线柱的第一加热段，用于加热所述基片承载台，所述第一加热段包括多个第一弧形加热段以及用于连接不同第一弧形加热段的连接部；所述第一弧形加热段最近端到所述旋转轴线(OO’)的距离记为S min，所述第一弧形加热段最远端到所述旋转轴线(OO’)的距离记为S max，所述辅助加热器到所述旋转轴线(OO’)的距离在区间[S min，S max]内，每个辅助加热器包括：两个辅助接线柱；连接所述两个接线柱的辅助加热段，用于加热所述基片承载台。
其中，弧形加热段的“最近端”是指最靠近旋转轴线的弧形加热段的内侧边缘。“最远端”是指最远离旋转轴线的弧形加热段的外侧边缘。
根据本发明的另一个方面，提供了一种用于MOCVD设备的辅助加热器，所述MOCVD设备包括具有旋转轴线(OO’)的可旋转基片承载台和第一加热器，所述第一加热器和所述辅助加热器位于所述基片承载台下方并与所述基片承载台在竖直方向上相隔一距离，所述第一加热器用于加热上方基片承载台的环形区域，所述辅助加热器处于所述环形区域下方，且所述辅助加热器与旋转轴线具有不同的距离，用于调节所述环形区域中局部区域的温度，所述第一加热器均包括：两个第一接线柱； 以及连接所述两个第一接线柱的第一加热段，用于加热所述基片承载台，所述第一加热段包括多个弧形加热段以及用于连接不同弧形加热段的连接部。
可选地，所述辅助加热器包括：两个辅助接线柱；以及连接所述两个接线柱的辅助加热段，用于加热所述基片承载台。
可选地，所述辅助加热器的径向位置对应于相邻第一弧形加热段之间或者相邻第一加热器之间的间隙。
可选地，所述辅助加热器被隔热圈至少部分地围绕，所述隔热圈用于隔绝所述第一加热段对于所述辅助加热器的热辐射。
根据本发明的另一个方面，提供了一种用于加热可旋转基片承载台的加热装置，所述基片承载台具有旋转轴线(OO’)，所述加热装置位于基片承载台下方并与所述基片承载台在竖直方向上相隔一距离，所述加热装置包括主加热器以及多个辅助加热器，所述主加热器用于加热上方基片承载台，所述多个辅助加热器到旋转轴线(OO’)的距离不同，所述多个辅助加热器中的每个辅助加热器用于独立调节主加热器所加热区域中的局部温度。
根据本发明的另一个方面，提供了一种MOCVD设备，包括：气密的反应室；设置在所述反应腔内并可转动的基片承载台，用于固定基片于其上表面；位于基片承载台下方并与基片承载台在竖直方向上相隔一段距离的如上所述的加热装置，用于加热所述基片承载台。
根据本发明的另一个方面，提供了一种利用如上述的MOCVD设备进行半导体工艺处理的方法，其特征在于，包括：将基片放置在基片承载台上，启动主加热器，进行基片工艺处理；检测基片表面的工艺参数分布；调节辅助加热器以实现期望的工艺参数分布。
根据本发明的另一个方面，提供了一种用于MOCVD设备的辅助加热器，所述MOCVD设备包括具有旋转轴线(OO’)的可旋转基片承载台和第一加热器，所述第一加热器和所述辅助加热器位于所述基片承载台下方并与所述基片承载台在竖直方向上相隔一距离，所述第一加热器用于加热上方基片承载台的环形区域，所述辅助加热器处于所述环形区域下方，且所述辅助加热器与旋转轴线具有不同的距离，用于调节所述 环形区域中局部区域的温度，所述第一加热器均包括：两个第一接线柱；以及连接所述两个第一接线柱的第一加热段，用于加热所述基片承载台，所述第一加热段包括多个弧形加热段以及用于连接不同弧形加热段的连接部。
根据本发明的另一个方面，提供了一种用于MOCVD设备的辅助加热器，所述MOCVD设备包括具有旋转轴线(OO’)的可旋转基片承载台和主加热器，所述主加热器和所述辅助加热器位于所述基片承载台下方并与所述基片承载台在竖直方向上相隔一距离，所述主加热器用于加热上方基片承载台，所述辅助加热器到旋转轴线(OO’)的距离不同，所述辅助加热器用于独立调节主加热器所加热区域中的局部温度。
附图说明
图1是本发明一个实施例的MOCVD设备的结构示意图；
图2与图3是常用的对基片承载台进行加热的加热装置的结构示意图；
图4与图5(a)～图5(c)是本发明一个实施例的加热装置的结构示意图；
图6～图10是加热装置的其他实施例的结构示意图。
具体实施方式
本发明的装置/部件主要可被应用于CVD设备，尤其是在沉积过程中用于固定基片的基片承载台(wafer holder，业内有时也称作“基片托盘”)会以一定的转速旋转，以提高沉积质量的CVD设备，比如，MOCVD设备。说明一点，这里的CVD设备应作较宽泛的理解，包括外延生长装置在内。
以下将结合附图对本发明的加热装置及包括该加热装置的MOCVD设备进行说明。需强调的是，这里仅是示例型的阐述，不排除有其它利用本发明的实施方式。并且，各种实施例中的技术特征可进行任意组合。
图1是本发明一个实施例的MOCVD设备的结构示意图。如图1所示，MOCVD设备10包括具有进气装置14、排气装置17的反应室2，其中，进气装置14可设置在反应室2的顶部，排气装置17可设置在反应室2的底部。
反应室2具有位于顶端的顶壁22、位于底端的底壁24以及在顶壁22与底壁24之间延伸的圆筒形侧壁26。顶壁22、底壁24与侧壁26共同围成气密性的内部处理空间20，可容纳从进气装置14射出的气体。尽管所示的反应室2为圆筒形的，其他实施例也可包括具有其他形状的反应室，例如包括圆锥形或其他回转面，方形、六角形、八角形或任意其他适当的形状。
进气装置14与用于供应在基片处理过程中应用的处理气体的气体源连接，处理气体如载体气体和反应气体，反应气体如金属有机化合物及V族金属元素的来源物质。在典型的金属有机化学气相沉积过程中，载体气体可为氮气、氢气或氮气和氢气的混合物，因此在基片承载台顶面的处理气体可主要由氮气和/或氢气组成，并带有一些量的反应气体成分。进气装置14设置为接收各种气体并引导处理气体大致以向下的方向流动。
进气装置14还可与设置为液体循环通过气体分配元件的冷却系统连接，以使操作过程中元件的温度保持在所需的温度。另外，为了冷却反应室2的壁(包括顶壁22、底壁24与侧壁26)，可设置类似的冷却装置(未示出)。
排气装置17设置为从反应室2的内部处理空间20排放气体(既包括反应生成的废气，也包括未来得及参加反应的部分气体)。排气装置17包括设置在反应室2底部或邻近底部的出气口70，以及设置在反应室2外、与出气口70连通用于提供气体流动动力的泵18或其它真空源。
反应室2还设置有用于基片移入移出的基片进出口30，以及紧邻侧壁26设置并可沿侧壁26方向进行上下移动的、呈环形的反应室内衬34。反应室内衬34具有位于上方的关闭位置和位于下方的打开位置。基片处理完成后，可下移反应室内衬34(使其处于打开位置)，将基片进出口30暴露，进而可将基片自基片进出口30移出。下批次的待处理基片 也可自基片进出口30移入。基片移入后，可上移反应室内衬34(使其处于关闭位置)，将基片进出口30遮盖，从而使内部处理空间20与基片进出口30分隔开。处于关闭位置时，由该反应室内衬34所界定出的区域呈对称的圆形，并且基片进出口30被“隐藏”在反应室内衬34后面因而不会与处理气体有接触，处理气体所能接触到的区域是由该反应室内衬34所界定出的圆周形边界，其保证了整个处理环境的均匀性。用于控制和驱动反应室内衬34上下移动的驱动机构(未示出)可以是任意类型的驱动器，例如机械的、机电的、液压的或气动的驱动器。
尽管所示的反应室内衬34为圆筒形的，其他实施例可包括具有其他形状的反应室内衬，例如包括，方形、六角形、八角形或任意其他适当的形状。
反应室2还设置有可转动的转轴44、安装在转轴44顶端并可随转轴44转动的基片承载台40、装载机构(未示出)以及加热装置46等。其中，转轴44与如电机驱动器等的旋转驱动机构(未示出)连接，设置为使转轴44绕其中心轴旋转。转轴44还可设有大致沿转轴的轴向延伸的内部冷却通道(未示出)。内部冷却通道可与冷却源连接，使得流体冷却剂可由冷却源穿过冷却通道并返回冷却源而循环。
替代地，反应室2还可设置有转筒，基片承载台的边缘部分架设在转筒的筒口的圆周部分上，当转筒转动时，带动基片承载台一起旋转。旋转驱动机构的设置方式如上所述，不再赘述。
基片承载台40大体上呈圆盘状，可由不污染MOCVD过程且能承受该过程所经历温度的材料(如石墨、碳化硅或其他耐热材料)制成。基片承载台40的上表面内设置有复数个大致为圆形的基片保持容纳部(未示出)，每个基片保持容纳部适于保持一个基片W。在一个示例中，基片承载台40可具有约500毫米至约1000毫米的直径。
装载机构(未示出)能将基片承载台40自基片进出口30移入反应室2内，并将基片承载台40安装在转轴44顶端；还能使基片承载台40与转轴44脱离，并自基片进出口30移出反应室2。
加热装置46通常设置在基片承载台40下方的隔热屏蔽板49上，主要将热量热辐射至基片承载台40的底面。施加至基片承载台40底面 的热量可向上流动经过基片承载台40传递至每个基片W的底面，并向上经过基片W至基片W的顶面。所述隔热屏蔽板49下方固定有液冷管道，使得隔热屏蔽板49下方具有一低温区域，加热装置的用于输入功率的第一接线柱和辅助接线柱穿过隔热屏蔽板49到达下方低温区域。热量还可从基片承载台40的顶面与基片W的顶面辐射至反应室2的较冷元件，例如反应室2的侧壁26及进气装置14。热量还可从基片承载台40的顶面与基片W的顶面传递至在这些表面上方流过的处理气体。反应室2还包括外衬套28，以减少处理气体向反应室内容纳加热装置46的区域的渗入。在示例性的实施例中，可在加热装置46下方设置隔热罩(未示出)，例如，设置为与基片承载台40平行，以帮助引导热量从加热装置46向上朝基片承载台40传递，而不是向下朝反应室2底端的底壁24传递。
图2与图3是一种常用的加热装置的结构示意图，其可应用于图1所示的MOCVD设备中，用于使基片承载台上表面各处可获得较均匀的温度。如图2(由于页面宽度的限制，图2中只示出了基片承载台40’与加热装置等的半边结构。基片承载台40’与加热装置均为轴对称结构，因而，显示的这半边结构已能大致清楚揭露加热装置的结构及加热装置与基片承载台40’间的相对位置关系)与图3所示，所述加热装置位于基片承载台40’下方并与所述基片承载台40’在竖直方向上相隔一段距离，以辐射的方式加热所述基片承载台40’，所述加热装置包括连续的加热器46’。本专利文件此处及后文所称的加热器“连续”指的是，单个加热器中分布于各区域、用于将电能转化为热能的各加热部电性连接为一个整体，该加热器只需通过连接一个电源就可充分工作。
所述加热器46’整体上位于同一平面内，并包括两个接线柱m’与n’以及加热段。其中，两个接线柱m’与n’用于电连接一加热电源(未图示)的电极，以使该加热电源可施加于加热器46’。所述加热器用于连接该两个接线柱m’与n’，包括呈同心圆分布的多个弧形加热段a’、b’、c’、d’、e’与f’以及用于连接相邻弧形加热段的连接部p’。弧形加热段a’、b’、c’、d’、e’与f’的圆心均位于基片承载台40’的旋转轴OO’上。
为解决对基片承载台40’的下表面的均匀加热，一种方法是设置多 个加热器46’，每一加热器只覆盖一个很小的区域，并与一个独立的加热电源电连接。也就是说，划分出多个加热区域，例如3个或4个区域，当某一区域的温度需要调整时，只需要调整对应的加热器的加热电源功率即可。通常而言，每一加热器覆盖的区域越小，改善的效果越明显。但是，这种解决方法需要增加数个甚至更多个加热电源，显著增加了成本。另外，由于加热电源数目的增多，使得加热器与加热电源之间的线路连接变得复杂，控制器对加热电源功率的自动控制也变得困难。
另一种方法是在加热器46’中设置至少两个弧形加热段——第一弧形加热段与第二弧形加热段，它们两者的单位长度的电阻率不相等(例如，通过改变弧形加热段c的宽度来实现)。该不相等是为了改善基片承载台40’各区域的温度均匀性。但是，这种方法存在以下不足：(1)要得到均匀的温度分布，必须更换不同的加热段。而更换加热段必须在机台关机的情况下才能完成，无法在工艺处理过程中对局部区域实时地调整温度分布；(2)每修改一次温度分布，就必须重新加工一组新的加热器，并且需要进行测试优化，最终才能定型。这无疑增加了成本并且延长了制作周期。
本发明的创作人致力于改善上述缺陷。在研究和实验中，创作人发现，在处理基片时，加热器是固定在隔热屏蔽板上，而在加热器上方的基片承载台正在沿着旋转轴线OO‘旋转。在隔热屏蔽板上任意点处设置一加热器时，该加热器的加热轨迹为以该加热器到旋转轴线的距离为半径的圆。由于加热器具有径向宽度，所以其实际的加热区域是一圆环区域。推类可知，各个弧形加热段加热的区域也是一个圆环区域，该圆环区域的内半经对应于弧形加热段在径向上的内侧边界到旋转轴线的距离，该圆环区域的外半经对应于弧形加热段在径向上的外侧边界到旋转轴线的距离。连接部的加热区域也是一圆环区域，该加热区域基本涵盖相邻弧形加热段径向之间的间隙区域。因此，当在隔热屏蔽板上设置一个小功率的辅助加热器时，该辅助加热器就可以调节其所在圆环区域的温度，该圆环区域大致是以辅助加热器到旋转轴线的距离为半径的圆周的附近区域。上述的第一加热器和辅助加热器一起设置在隔热屏蔽板上时，第一加热器因其加热面积较大，用于主控基片承载台的加热温度， 而辅助加热器根据其所处的位置，可以用于实时连续地微调其所在圆环区域的温度，达到局部温控的目的。
根据以上的解决思路，创作人设计出了一种用于加热可旋转基片承载台的加热装置，该基片承载台具有旋转轴线(OO’)，该加热装置位于基片承载台下方并与基片承载台在竖直方向上相隔一距离，该加热装置包括一个或多个第一加热器以及多个辅助加热器，一个或多个第一加热器用于加热上方基片承载台的环形区域，多个辅助加热器处于所述环形区域下方，且多个辅助加热器与旋转轴线具有不同的距离，用于调节所述环形区域中局部区域的温度，一个或多个第一加热器均包括：两个第一接线柱；连接两个第一接线柱的第一加热段，用于加热所述基片承载台，第一加热段包括多个弧形加热段以及用于连接不同弧形加热段的连接部；每个辅助加热器包括：两个辅助接线柱；连接两个辅助接线柱的辅助加热段，用于加热所述基片承载台。
对环形区域进行如下定义。旋转轴线(OO’)垂直穿过基片承载台的圆心O，所述环形区域的内半径记为S min，所述环形区域的外半径记为S max。每个辅助加热器到基片承载台的旋转轴线OO’的距离在区间[S min，S max]内。
通常地，多个弧形加热段环绕分布在基片承载台的下方。外侧的弧形加热段的弧长度大于内侧弧形加热段的弧长度。
在一个实施例中，辅助加热器的辅助加热段在弧形加热段的正下方，即辅助加热器被弧形加热段覆盖。辅助加热器的加热方式是将热量辐射到第一加热器，再辐射到基片承载台的下表面。在其他实施例中，辅助加热器的辅助加热段与弧形加热段的高度齐平。或者，辅助加热器的辅助加热段的高度略低于弧形加热段的高度。在这些实施例中，辅助加热器没有被弧形加热段覆盖。
辅助加热器和第一加热器由不同的加热电源供应加热功率，所以，他们的输出功率可以独立控制，因而加热效果也能独立控制。例如，它们的加热功率相差10-100倍。辅助加热器中的辅助加热段在基片承载台上的投影面积远小于弧形加热段在基片承载台上的投影面积，例如相差达10-20倍。并且辅助加热段的投影面积小于任一段的弧形加热段的 投影面积。
当在辅助加热器上方的基片承载台旋转时，辅助加热器就能够加热以其到旋转轴线OO’的距离为半径的圆周附近区域的温度。将辅助加热器设置在到旋转轴线OO’的不同距离处，就能加热以不同距离为半径的圆周的附近温度。因此，将辅助加热器到旋转轴线OO’的距离设定在区间[S min，S max]内，这能够使辅助加热器对第一加热器的整个圆环加热区域中所需的局部区域进行温度的微调。根据不同需要，可以设定不同数量的辅助加热器，且设定这些辅助加热器到旋转轴线OO’的不同距离。
辅助加热器到旋转轴线OO’的距离可以设置为在区间[S min，S max]内的任意值。并且，由于辅助加热器加热的是以其到旋转轴线OO’的距离为半径的圆周附近区域的温度，所以，辅助加热器可以设置在该圆周上的任意位置。换言之，辅助加热器并非必须沿着径向以直线排列，其径向的排列方式可以是任意的。
在另一个实施例中，本申请还提出了一种用于加热可旋转基片承载台的加热装置，所述基片承载台具有旋转轴线(OO’)，所述加热装置位于基片承载台下方并与所述基片承载台在竖直方向上相隔一距离，所述加热装置包括主加热器以及多个辅助加热器，所述主加热器用于加热上方基片承载台，所述多个辅助加热器到旋转轴线(OO’)的距离不同，所述多个辅助加热器中的每个辅助加热器用于独立调节主加热器所加热区域中的局部温度。
其中，所述主加热器包括主加热段，所述主加热段包括多个弧形加热段。当基片承载台旋转时，所述多个辅助加热器用于加热所述基片承载台并形成若干个到旋转轴线距离不同的辅助环形加热区，所述若干个辅助环形加热区的温度可独立调节，以调节所述主加热器所加热区域的局部温度。
可选地，当基片承载台旋转时，所述弧形加热段在基片承载台上的垂直投影形成第一环形区域，至少一个所述辅助加热器在基片承载台上的垂直投影至少部分地处于所述第一环形区域中。
可选地，当基片承载台旋转时，相邻的所述弧形加热段之间的间隙 在基片承载台上的垂直投影形成第二环形区域，至少一个所述辅助加热器在基片承载台上的垂直投影至少部分地处于所述第二环形区域中。
图4、图5(a)、图5(b)和图5(c)示出了根据本发明的一实施例的加热装置的结构示意图。图4是该加热装置的俯视示意图；图5(a)、图5(b)和图5(c)分别是沿图4中的基片承载台径向线aa’、bb’和cc‘截取的截面示意图，为便于理解，这些图中还示出了基片承载台40的相对位置。如图4、图5(a)、图5(b)和图5(c)所示，所述加热装置位于基片承载台40下方并与所述基片承载台40在竖直方向上相隔一段距离，以辐射的方式加热所述基片承载台40，该加热装置46包括第一加热器461和辅助加热器465。第一加热器461包括多个弧形加热段以及连接部，下文将详述。在其他实施例中，第一加热器461也可以仅包括多个弧形加热段，而没有连接部。每个辅助加热器465包括：两个辅助接线柱465a；和连接所述两个接线柱的辅助加热段465b。
如图4所示，加热装置46包括两个第一加热器461，每个第一加热器461的弧形加热段的数目与图2或图3中的加热器46’的不同。为简单论述，将第一加热器461的加热段分别由内至外依次标记为a～g，八个辅助加热器465标记为A～H。可见，外侧的加热段的弧形长度大于内侧的弧形长度。图4和图5(a)所示，最内侧的弧形加热段a的内侧边缘到旋转轴OO’的距离为S min，最外侧的弧形加热段h的外侧边缘到旋转轴OO’的距离为S max。S min和S max即为环形区域的内外半径。辅助加热器A～H到旋转轴OO’的距离都在区间[S min，S max]内，即辅助加热器465都处于环形区域的下方。在图中所示的实施例中，辅助加热器465沿着径向依次排列，并且辅助加热器的高度与弧形加热段a～h的高度一致。在替代的实施例中，辅助加热器465也可以在径向上随机排列，只需满足各辅助加热器465在环形区域的下方，即到旋转轴OO’的距离都在区间[S min，S max]内即可。在替代的实施例中，辅助加热器465在弧形加热段a～h的正下方。
辅助加热器的径向位置A-D对应于相邻第一弧形加热段之间或者相邻第一加热器之间的间隙。具体如下所述，如图5(a)所示，示意性地标记了第一加热器461中的加热段和相邻加热段之间的间隙到旋转轴 OO’的距离。举例来说，加热段b、c之间的间隙到旋转轴OO’的距离为S g1，加热段c、d之间的间隙到旋转轴OO’的距离为S g2，加热段d到旋转轴OO’的距离为S c1，加热段e到旋转轴OO’的距离为S c2。如图5(b)所示，辅助加热器A-D设置的位置是：它们到旋转轴OO’的距离对应于相邻加热段之间的间隙到旋转轴的距离。具体而言，辅助加热器A到旋转轴OO’的距离对应于S g1，而辅助加热器B到旋转轴OO’的距离对应于S g2；辅助加热器C、D的设置关系依次类推。这样的设置有利于对相邻加热段之间的间隙上方进行温度调节。在基片的制程中，弧形加热段所在圆周的上方区域能得到有效加热，而相邻弧形加热段之间的间隙所在圆周的上方只能通过连接部进行加热，由于连接部的加热面积远小于加热段面积，所以该间隙所在圆周的上方不能得到有效加热，并且连接部和弧形加热段连接成一体，不能被独立加热，因而使得在径向上的加热效果的不均匀。在该实施例中，辅助加热器A-D到旋转轴OO’的距离对应于相邻加热段之间的间隙到旋转轴的距离，并且辅助加热器A-D和第一加热器461被分别供电，这就能有效地补偿这些间隙所在圆周上方的加热效果或调节间隙上方区域的温度控制。在另一实施例中，辅助加热器到旋转轴OO’的距离还对应于相邻第一加热器之间的间隙。
需注意，在本说明书中，短语“径向”是指垂直于旋转轴OO’的方向，径向排布的加热器可以位于相同的平面内，也可以位于不同的平面内。短语“间隙到旋转轴OO’的距离”是指间隙的径向中心点到旋转轴OO’的距离。短语“辅助加热器到旋转轴OO’的距离”是指辅助加热器的径向中心点到旋转轴OO’的距离。短语“加热段到旋转轴OO’的距离”是指加热段的径向中心点到旋转轴OO’的距离。短语“对应于”是指辅助加热器到旋转轴的距离等于第一加热器的弧形加热段到旋转轴的距离或弧形加热段之间的间隙到旋转轴的距离，或者，辅助加热器到旋转轴的距离和第一加热器的弧形加热段或弧形加热段之间的间隙到旋转轴的距离相差在5％之内，或者，辅助加热器到旋转轴的距离与弧形加热段或弧形加热段之间的间隙到旋转轴的距离之差小于等于10mm，或小于等于15mm、或小于等于17mm。
辅助加热器465还可以设置在径向的其他位置上。例如，如图5(c) 所示，辅助加热器E-H到旋转轴OO’的距离对应于加热段d、e、f、g到旋转轴OO’的距离。具体而言，辅助加热器E到旋转轴OO’的距离对应于S c1，而辅助加热器F到旋转轴OO’的距离对应于S c2；辅助加热器G、H的设置关系依次类推。如此设置的辅助加热器可以调节弧形加热段所在圆周上方的区域。
注意到，上述辅助加热器A-H只是示意性地表示到旋转轴OO’的位置。这些辅助加热器的个数和位置以及尺寸可以根据工艺和空间的需要而进行改变。
在另一个实施例中，可以仅设置辅助加热器A-D或者仅设置辅助加热器E-H。这些辅助加热器可以设置在旋转轴的一侧，或者分别排列在两侧。
如图4所示，辅助加热器的辅助加热段465b是沿着基片承载台的切线方向蛇形往复排布的加热段。该加热段整体在径向上的宽度记为W。在一实施例中，该径向宽度W小于等于相邻加热段之间间隙的径向宽度ΔS c(如图5(a)和图5(b)所示)。这种设置使得辅助加热器能够更精确地调节弧形加热段之间的间隙所在圆周的上方温度。在另一个实施例中，至少一个辅助加热器的径向宽度W小于等于(S max–S min)/2，即小于等于环形区域的径向宽度的一半。
辅助加热器的辅助加热段465b也可以具有其他形状，例如沿着基片承载台的径线方向蛇形往复排布，或者具有螺线型形状等。
第一加热器461的加热功率大于用于调节第一加热器461加热区域中的温度的辅助加热器465的加热功率。通常地，第一加热器461的加热功率是辅助加热器465的加热功率的10倍以上，例如20倍、30倍、100倍等。在一个实施例中，第一加热器461的加热功率可达100kW，辅助加热器465的加热功率约为1000W。在另一个实施例中，由于外圈的加热区域面积大于内圈的加热区域面积，所以到旋转轴OO’的距离大的辅助加热器465的加热功率比到旋转轴OO’的距离小的辅助加热器465的加热功率大。例如，在图4中，辅助加热器C的加热功率大于辅助加热器B的加热功率；辅助加热器B的加热功率大于辅助加热器A的加热功率。
在一个实施例中，在多个第一加热段461的多个相对的连接部P之间设置辅助加热区，所述辅助加热器465位于所述辅助加热区中。可选地，所述辅助加热区的面积小于基片承载台的面积的1/10。在其他实施例中，如果第一加热器只有一个连续的弧形加热段，则辅助加热区可设置在该连续的弧形加热段的多个相对的连接部P之间。
以下给出了关于本发明的加热装置的多个实施例。
图6示出了根据本发明的另一实施例的加热装置的结构示意图。与图4中所示实施例不同的是，在该实施例中，到旋转轴OO’距离不同的圆周上设置不同个数的辅助加热器465。靠外的圆周上比靠内的圆周上设置更多的辅助加热器465，这是因为靠外的圆周上加热区域更大，需要更多的辅助加热器465进行温度的调节。
图7示出了根据本发明的另一实施例的加热装置的结构示意图。为了隔绝第一加热段对于辅助加热器465的热辐射，在该实施例中，辅助加热器465还包括隔热圈465c，该所述隔热圈465c设置在辅助加热段的周围，能够有效隔绝第一加热段461的热辐射，使得辅助加热器的加热热量有效地施加至所述基片承载台，以及辅助加热器的温度调节更加精确。
图8示出了根据本发明的另一实施例的加热装置的结构示意图。在该实施例中，加热装置46还可包括第二加热器462，第二加热器462的两端均与另一加热电源(未图示)的电极电连接。该第二加热器462位于第一加热器461外周并包围第一加热器461，用于加热基片承载台40的最外缘区域。该第二加热器462可为单圈或多圈的圆弧结构，也可以是1/2或1/4的圆弧结构。第二加热器462的厚度、材质等均可与第一加热器461相同。第二加热器462的宽度可远小于第一加热器461各处的宽度，用以提供更高的发热功率。在本实施例中，第一加热器461、第二加热器462由不同的加热电源(未示出)提供能源，因而它们可互不干扰地实现独立控制。为方便统一支撑，第二加热器462与第一加热器461可设置在同一平面内，如图8所示。需注意的是，在该实施例中，辅助加热器465与图5至图7中的辅助加热器类似，区别在于辅助加热器465中的辅助加热段的排布方式不同。在该实施例中，辅助加热段沿 着径向往复排布，而图5至图7中的辅助加热器的辅助加热段沿着周向往复排布。这些辅助加热器都起到调节第一加热器461和第二加热器462所加热区域中的局部温度。
图9示出了根据本发明的另一实施例的加热装置的结构示意图。在该实施例中，加热装置46还可以包括多种不同的第一加热器，例如，第一加热器461和第一加热器463，第一加热器463的两端与另一加热电源(未图示)的电极电连接。第一加热器463位于基片承载台的中心区域下方。第一加热器463的具体结构类似于第一加热器461，包括加热段，该加热段包括多个弧形加热段以及用于连接不同弧形加热段的连接部。第一加热器463的厚度、材质等均可与第一加热器461相同。第一加热器463的宽度可远小于第一加热器461各处的宽度，用以提供更高的发热功率。第一加热器463用于独立地控制基片承载台的中心区域的温度。
上文说明了本发明的加热装置中的第一加热器、第二加热器以及辅助加热器，本领域技术人员还能想到设置其他加热器或加热段。例如，这些加热器可通过电感方式加热，也可以通过电阻方式加热。本发明中的第一加热器、第二加热器以及辅助加热器的加热功率独立可控。例如，它们由不同加热电源供应。可替换地，这些加热器以及辅助加热器的加热功率由同一加热电源供应，该同一加热电源的功率输出分为多路，分别供应不同的加热器和辅助加热器，并且分配至各路的加热功率可调节。
加热装置46包括第一加热器461和/或第二加热器462以及辅助加热器465，第一加热器461和第二加热器462作为本发明的主加热器，用于加热基片承载台。辅助加热器用于加热所述基片承载台并形成若干个到基片承载台旋转轴OO’距离不同的辅助环形加热区，所述若干个辅助环形加热区的温度可独立调节，以调节所述主加热器所加热区域的局部温度。
图10示出了根据本发明的另一实施例的加热装置的结构示意图。在该实施例中，加热装置位于基片承载台下方，所述加热装置包括主加热器461、462和辅助加热器465。主加热器461、462用于加热上方基 片承载台，多个辅助加热器465沿着基片承载台的径向分布设置，到基片承载台的旋转轴OO’，每个辅助加热器465用于独立调节主加热器461、462所加热区域中的局部温度。多个辅助加热器465沿着基片承载台的径向呈一直线排布，如图10所示。可选地，多个辅助加热器465还可以沿着基片承载台的径向以任意方位角离散排布。例如，辅助加热器465沿着径向交错排布，或者，辅助加热器465沿径向排布的轨迹线为一弧线。需注意，辅助加热器还可以设置在最外圈的两个主加热器462之间。主加热器461、462与辅助加热器465设置在同一平面上。可选地，主加热器461、462与辅助加热器465也可以设置在不同平面上，即主加热器461、462到基片承载台的距离与辅助加热器465不同。可选地，辅助加热器465还能设置在主加热器461、462的正下方，即辅助加热器465到基片承载台的垂直投影与主加热器到基片承载台的垂直投影重叠或至少部分重叠。
在本实施例中，如图10所示，主加热器461包括多个弧形加热段461a、461b、461c，多个弧形加热段461a、461b、461c之间具有连接部以连接弧形加热段。当基片承载台在主加热器461上方旋转时，弧形加热段461a在基片承载台上的垂直投影形成第一环形区域501，辅助加热器465a在基片承载台上的垂直投影至少部分地处于该第一环形区域501中，使得辅助加热器465a主要调节第一环形区域501中的温度。最优地，辅助加热器465a位于第一环形区域501中，使得辅助加热器465a能有效地调节该局部区域的温度。可选地，辅助加热器465a的径向中心在径向上可以偏离第一环形区域501的径向中心一定距离，该距离范围为小于20mm，可选地，小于15mm，或小于10mm。本申请对此不做限定，具体视情况而定。
弧形加热段461b和弧形加热段461c之间具有间隙，当基片承载台在这些弧形加热段上方旋转时，该间隙在基片承载台上的垂直投影形成第二环形区域502，辅助加热器465b在基片承载台上的垂直投影至少部分地处于该第二环形区域502中，使得辅助加热器465b主要调节第二环形区域502中的温度。最优地，辅助加热器465b位于第二环形区域502中，使得辅助加热器465b能有效地调节该局部区域的温度。可选地， 辅助加热器465b的径向中心在径向上可以偏离第二环形区域502的径向中心一定距离，该距离范围为小于20mm，可选地，小于15mm，或小于10mm。本发明对此不做限定，具体视情况而定。
在该实施例中，辅助加热器465分为两组，第一组四个辅助加热器在基片承载台上的垂直投影分别处于主加热段在基片承载台上的垂直投影所形成的多个环形区域中。第二组四个辅助加热器在基片承载台上的垂直投影分别处于相邻主加热段之间的间隙在基片承载台上的垂直投影所形成的多个环形区域中。两组辅助加热器分别排布在托盘旋转轴(OO’)的两侧。本发明对此不做限定，具体视情况而定。
可选地，加热装置还包括与辅助加热器连接的驱动装置，该驱动装置驱动任一个辅助加热器沿着基片承载台的径向移动或者沿着旋转轴线(OO’)方向移动，以根据实际工艺需求调节基片承载台不同的局部温度。
可选地，加热装置还包括与辅助加热器连接的功率控制器，功率控制器用于调节任一个辅助加热器的加热功率,以根据实际工艺需求调节基片承载台不同的局部温度。
可选地，辅助加热器465与主加热器461、462具有不同的加热功率。例如，主加热器461、462的实际加热功率是辅助加热器的实际加热功率的15倍以上，或20倍以上。
可选地，主加热器461、462可以通过电感方式加热和/或电阻方式加热。辅助加热器465也可以通过电感方式加热和/或电阻方式加热。例如，电感方式加热包括RF线圈加热；电阻方式加热包括加热片加热、加热丝加热或灯管型加热。
主加热器461、462中的弧形加热段以及连接部的材料可以包括难熔金属，石墨，钨，钼，铼，钽，铌，锆，或其组合或合金，超合金材料，碳化硅等。弧形加热段和连接部的表面以及辅助加热段的表面可以至少部分地覆盖有难熔金属或合金，氮化硼，碳化钽，碳化硅等耐高温涂层材料。
本发明中的辅助加热器具有以下多项优点：
加热器组件长期使用后，相关组件例如隔热屏、加热片支架、导电 支架等会沉积反应生成物或材料晶粒变大，从而造成材料性质改变，影响加热片的工作表现，造成MOCVD工艺表现漂移，增加不稳定性，需要更换加热器零件来解决问题。MOCVD反应腔组件在长期使用后，也会发生老化和表面改性，造成加热器辐射加热环境变化，从而造成MOCVD工艺表现漂移，需要工艺参数实时调整，并频繁对反应腔进行清理维护。本公开可以在不更换主加热器中的弧线加热段的前提下，通过调节辅助加热器的功率来补偿温度分布的变化，简单方便，节省成本并且提高机台的使用率。
针对不同的基片承载台(基片尺寸及排布方式不同)，往往会有不同温度分布要求。通常做法是采用不同规格的主加热段对应不同的温度分布，更换一种基片承载台时必须更换一套主加热段。本发明可以在不改变主加热段规格的前提下，通过微调辅助加热器的功率输出来适应不同温度分布要求。有适应性强，可调节性能好，调节精度高的优点。
由于辅助加热器本身尺寸较小，可以方便的通过改变辅助加热段与主加热段及基片承载台的相对位置来更加精确地调节局部温度分布。
本发明还公开了一种利用上述MOCVD设备进行半导体工艺处理的方法，该方法包括：将基片放置在基片承载台上，启动主加热器，进行基片工艺处理；检测基片表面的工艺参数分布；调节辅助加热器以实现期望的工艺参数分布。可选地，所述工艺参数包括基片表面的温度和/或热辐射的波长。调节辅助加热器可包括以下中的任一项：沿着基片承载台的径向移动辅助加热器、沿着旋转轴线(OO’)方向移动辅助加热器、调节辅助加热器的加热功率。
尽管本发明的内容已经通过上述优选实施例作了详细介绍，但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后，对于本发明的多种修改和替代都将是显而易见的。因此，本发明的保护范围应由所附的权利要求来限定。

Claims (33)

  1. 一种用于加热可旋转基片承载台的加热装置，所述基片承载台具有旋转轴线(OO’)，所述加热装置位于基片承载台下方并与所述基片承载台在竖直方向上相隔一距离，所述加热装置包括主加热器以及多个辅助加热器，
    所述主加热器用于加热上方基片承载台，
    所述多个辅助加热器到旋转轴线(OO’)的距离不同，所述多个辅助加热器中的每个辅助加热器用于独立调节主加热器所加热区域中的局部温度。
  2. 如权利要求1所述加热装置，其特征在于，所述多个辅助加热器呈直线排布。
  3. 如权利要求1所述加热装置，其特征在于，所述辅助加热器到基片承载台的距离与所述主加热器到基片承载台的距离相同或不相同。
  4. 如权利要求1所述加热装置，其特征在于，所述主加热器包括主加热段，所述主加热段包括多个弧形加热段。
  5. 如权利要求1所述加热装置，其特征在于，当基片承载台旋转时，所述多个辅助加热器用于加热所述基片承载台并形成若干个到旋转轴线距离不同的辅助环形加热区，所述若干个辅助环形加热区的温度可独立调节，以调节所述主加热器所加热区域的局部温度。
  6. 如权利要求4所述加热装置，其特征在于，当基片承载台旋转时，所述弧形加热段在基片承载台上的垂直投影形成第一环形区域，至少一个所述辅助加热器在基片承载台上的垂直投影至少部分地处于所述第一环形区域中。
  7. 如权利要求4所述加热装置，其特征在于，当基片承载台旋转时，相邻的所述弧形加热段之间的间隙在基片承载台上的垂直投影形成第二环形区域，至少一个所述辅助加热器在基片承载台上的垂直投影至少部分地处于所述第二环形区域中。
  8. 如权利要求4所述加热装置，其特征在于，至少一个所述辅助加热器的径向位置对应于相邻弧形加热段之间的间隙的径向位置。
  9. 如权利要求4所述的加热装置，其特征在于，至少一个所述辅助加热器的径向位置对应于所述弧形加热段的径向位置。
  10. 如权利要求4所述加热装置，其特征在于，所述辅助加热器中的第一组辅助加热器的径向位置对应于相邻弧形加热段之间的间隙的径向位置，并且所述辅助加热器中的第二组辅助加热器的径向位置对应于所述弧形加热段的径向位置。
  11. 如权利要求10所述加热装置，其特征在于，所述第一组辅助加热器和所述第二组辅助加热器分别位于所述旋转轴线(OO’)的两侧。
  12. 如权利要求4所述加热装置，其特征在于，至少一个所述辅助加热器的径向宽度大于相邻弧形加热段之间的间隙的宽度。
  13. 如权利要求4所述加热装置，其特征在于，所述主加热段还包括用于连接不同弧形加热段的连接部。
  14. 如权利要求13所述加热装置，其特征在于，在所述主加热段的多个相对连接部之间设置辅助加热区，所述辅助加热器位于所述辅助加热区中。
  15. 如权利要求14所述加热装置，其特征在于，所述辅助加热区的面积小于所述基片承载台的面积的1/5。
  16. 如权利要求1所述加热装置，其特征在于，所述辅助加热器包括第一辅助加热器和第二辅助加热器，所述第一辅助加热器到所述旋转轴线(OO’)的距离大于所述第二辅助加热器到所述旋转轴线(OO’)的距离，且所述第一辅助加热器的个数大于等于所述第二辅助加热器的个数。
  17. 如权利要求1所述加热装置，其特征在于，所述辅助加热器包括第一辅助加热器和第二辅助加热器，所述第一辅助加热器到所述旋转轴线(OO’)的距离大于所述第二辅助加热器到所述旋转轴线(OO’)的距离，且所述第一辅助加热器的加热功率大于等于所述第二辅助加热器的加热功率。
  18. 如权利要求1所述加热装置，其特征在于，所述主加热器的加热功率是所述辅助加热器的加热功率的15倍以上。
  19. 如权利要求1所述加热装置，其特征在于，所述加热装置还包 括隔热圈，所述隔热圈围绕所述辅助加热器，用于使得辅助加热器的加热热量施加至所述基片承载台。
  20. 如权利要求1所述加热装置，其特征在于，所述加热装置还包括与辅助加热器连接的驱动装置，所述驱动装置驱动多个所述辅助加热器中的任一个辅助加热器沿着基片承载台的径向移动或者沿着旋转轴线(OO’)方向移动。
  21. 如权利要求1所述加热装置，其特征在于，所述加热装置还包括与辅助加热器连接的功率控制器，所述功率控制器用于调节多个所述辅助加热器中的任一个辅助加热器的加热功率。
  22. 如权利要求1所述加热装置，其特征在于，所述主加热器或所述辅助加热器通过电感方式加热和/或电阻方式加热。
  23. 一种MOCVD设备，包括：
    气密的反应腔；
    设置在所述反应腔内并可转动的基片承载台，用于固定基片于其上表面；
    位于基片承载台下方并与基片承载台在竖直方向上相隔一段距离的如权利要求1至22中任一项所述的加热装置，用于加热所述基片承载台。
  24. 如权利要求23所述的MOCVD设备，其特征在于，主加热器器以及多个辅助加热器的加热功率独立可控。
  25. 如权利要求23所述的MOCVD设备，其特征在于，所述加热装置下方包括隔热屏蔽板，所述隔热屏蔽板下方固定有液冷管道，使得隔热屏蔽板下方具有一低温区域。
  26. 一种利用如权利要求23至25中任一项所述MOCVD设备进行半导体工艺处理的方法，其特征在于，包括：
    将基片放置在基片承载台上，启动主加热器，进行基片工艺处理；
    检测基片表面的工艺参数分布；
    调节辅助加热器以实现期望的工艺参数分布。
  27. 如权利要求26所述的方法，其特征在于，所述工艺参数包括基片表面的温度和/或热辐射的波长。
  28. 如权利要求26所述的方法，其特征在于，所述调节辅助加热器包括以下中的任一项：沿着基片承载台的径向移动辅助加热器、沿着旋转轴线(OO’)方向移动辅助加热器、调节辅助加热器的加热功率。
  29. 一种用于MOCVD设备的辅助加热器，所述MOCVD设备包括具有旋转轴线(OO’)的可旋转基片承载台和主加热器，所述主加热器和所述辅助加热器位于所述基片承载台下方并与所述基片承载台在竖直方向上相隔一距离，所述主加热器用于加热上方基片承载台，
    所述辅助加热器到旋转轴线(OO’)的距离不同，所述辅助加热器用于独立调节主加热器所加热区域中的局部温度。
  30. 如权利要求29所述的辅助加热器，其特征在于，所述主加热器包括主加热段，所述主加热段包括多个弧形加热段。
  31. 如权利要求29所述的辅助加热器，其特征在于，当基片承载台旋转时，所述辅助加热器用于加热所述基片承载台并形成若干个到旋转轴线距离不同的辅助环形加热区，所述若干个辅助环形加热区的温度可独立调节，以调节所述主加热器所加热区域的局部温度。
  32. 如权利要求30所述的辅助加热器，其特征在于，当基片承载台旋转时，所述弧形加热段在基片承载台上的垂直投影形成第一环形区域，至少一个所述辅助加热器在基片承载台上的垂直投影至少部分地处于所述第一环形区域中。
  33. 如权利要求30所述的辅助加热器，其特征在于，当基片承载台旋转时，相邻的所述弧形加热段之间的间隙在基片承载台上的垂直投影形成第二环形区域，至少一个所述辅助加热器在基片承载台上的垂直投影至少部分地处于所述第二环形区域中。
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