WO2020228401A1 - 金属氧化物有序交叉纳米线阵列及其制备方法 - Google Patents

金属氧化物有序交叉纳米线阵列及其制备方法 Download PDF

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WO2020228401A1
WO2020228401A1 PCT/CN2020/078363 CN2020078363W WO2020228401A1 WO 2020228401 A1 WO2020228401 A1 WO 2020228401A1 CN 2020078363 W CN2020078363 W CN 2020078363W WO 2020228401 A1 WO2020228401 A1 WO 2020228401A1
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metal oxide
nanowire
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邓勇辉
任元
邹义冬
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Fudan University
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/18—Methods for preparing oxides or hydroxides in general by thermal decomposition of compounds, e.g. of salts or hydroxides
    • C01B13/185—Preparing mixtures of oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/18—Methods for preparing oxides or hydroxides in general by thermal decomposition of compounds, e.g. of salts or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/16—Oxyacids of phosphorus; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00—Compounds of molybdenum
    • C01G39/02—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00—Compounds of tungsten
    • C01G41/006—Compounds containing tungsten, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer

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  • the invention belongs to the technical field of nano-semiconductor materials, and specifically relates to a metal oxide ordered crossed nanowire array material and a preparation method thereof.
  • one-dimensional (1D) metal oxide semiconductor nanomaterials have outstanding physical and chemical properties due to their unique one-dimensional nanomorphology and direct electronic channels (Xia ,YNet al.Adv.Mater.2003,15,353-389.; Devan,RSet al.Adv.Funct.Mater.2012,22,3326-3370.; Dasgupta,NPet al.Adv.Mater.2014,26 ,2137-2184.;Wang,FDet al.Chem.Rev.2016,116,10888-10933.).
  • DSA Directed self-assembly technology
  • the purpose of the present invention is to provide a method for preparing a metal oxide ordered crossed nanowire array that is simple to operate, convenient to control, and easy to repeat.
  • the preparation method of the metal oxide ordered crossed nanowire array material provided by the present invention uses an amphiphilic block copolymer (PEO-b-PS) with an ultra-large molecular weight hydrophobic segment as a template, and a polyoxometalate (POMs) ) As an inorganic precursor to synthesize ordered crossed nanowires of metal oxides; using the hydrophilic end (PEO) of the template and the polymetallic cation anion (SiW 12 O 40 4- , PW 12 O 40 3- , SiMo 12 O 40 4- , PMo 12 O 40 3-, etc.) to form core-shell columnar micelles.
  • PEO-b-PS amphiphilic block copolymer
  • POMs polyoxometalate
  • the ordered mesoscopic organic-inorganic composite structure is obtained by solvent evaporation-induced self-assembly (EISA). Utilizing the guiding effect of the template agent and the structural transformation caused by the firing, the highly crystalline ordered metal oxide semiconductor nanowire material is obtained after the template agent is removed.
  • EISA solvent evaporation-induced self-assembly
  • the highly crystalline ordered metal oxide semiconductor nanowire material is obtained after the template agent is removed.
  • the types of inorganic precursors polyoxometalates
  • the synthesis of Si-WO 3 , P-WO 3 , Si-MoO 3 , P-MoO 3 and other metal oxide nanowire materials can be controlled.
  • the spacing of the nanowire array and the diameter of the nanowires can be effectively controlled.
  • the pitch of the ordered nanowire material array obtained by this method can be controlled between 20-40nm, and the diameter of the nanowires is between 10-20nm.
  • the specific steps of preparation are as follows:
  • the solvent used in step (1) is one or more of tetrahydrofuran, toluene, chloroform, and dimethylformamide.
  • the molecular weight of the PEO block of the amphiphilic block copolymer is 2000-5000g/mol, and the molecular weight of the PS block is 10000-30000g/mol.
  • the polyoxometalate used is one or more of silicotungstic acid, phosphotungstic acid, silimolybdic acid, and phosphomolybdic acid.
  • the length of the hydrophobic block and hydrophilic block of the block copolymer can be changed to control the array spacing of the synthesized nanowire material and the diameter of the nanowire respectively.
  • polyoxometalate hydrates as inorganic precursors, it is possible to synthesize a variety of metal oxide nanowire materials composed of different elements with high crystallinity and high specific surface area (such as Si-WO 3 , P-WO 3 , Si-MoO 3 , P-MoO 3, etc.), and bimetal or multimetal composite oxide materials.
  • the polyoxometalates required for synthesis are all commercial reagents, which are convenient and easy to obtain.
  • the applied method of solvent volatilization induced self-assembly combined with roasting crystallization has good universality. Any method for synthesizing nanomaterials using the principle of solvent evaporation-induced self-assembly can be applied. Can choose spin-coating (spin-coating), pulling (dip-coating), or directly open the solution to volatilize and other methods to synthesize metal oxide ordered crossed nanowire materials.
  • the method of in-situ carbonization of the applied template agent has universality for synthesizing ordered mesoporous metal oxide materials.
  • the PS segment with sp 2 hybrid carbon-carbon double bond is converted into amorphous carbon in situ as the rigid support of the metal oxide, and then calcined in the air to remove the residual carbon, thereby obtaining a metal with a highly ordered and high specific surface
  • any method for synthesizing mesoporous metal oxide materials using the principle of self-assembly can be applied.
  • the synthesized material has a unique "nano mesh" morphology.
  • Orderly arranged metal oxide nanowires are parallel to the substrate, stacked layer by layer and cross vertically to form a semiconductor nano network structure with a high active specific surface area.
  • the degree of crystallization of the synthesized mesoporous material varies with the precursors used and the firing temperature used.
  • the present invention is different from the previous method of synthesizing metal oxide nanowire arrays, and directly adopts the method of co-assembling amphiphilic block copolymer (PEO-b-PS) and polyoxometalate (POMs). Since the protonated hydrophilic block (PEO) in the block copolymer can form a strong electrostatic force with the heteropolyanion (SiW 12 O 40 4-, etc.), a uniform columnar composite micelle is formed, and the subsequent During the evaporation of the solvent, it self-assembles to form an ordered mesostructure.
  • PEO-b-PS amphiphilic block copolymer
  • POMs polyoxometalate
  • the heteropoly acid is thermally decomposed into the corresponding metal oxide
  • a similar "Osterwald ripening ( Ostwald ripening)” process and finally a multilayer cross-ordered metal oxide (Si-WO 3, etc.) nanowire array is obtained.
  • the material has an open nano-framework, high specific surface area, high crystallinity and uniform non-metal heteroatom doping. This method has the advantages of simple operation, easy repeatability, and easy control of conditions.
  • Figure 1 is a FESEM photograph of a metal oxide ordered crossed nanowire material. Among them, (a) Si-WO 3 , (b) P-WO 3 , (c) Si-MoO 3 , and (d) P-MoO 3 .
  • PEO Polyethylene oxide monomethyl ether
  • PMDETA 2-bromoisobutyryl bromide
  • Silicotungstic acid hydrate H 4 SiW 12 O 40 ⁇ xH 2 O
  • phosphotungstic acid hydrate H 3 PW 12 O 40 ⁇ xH 2 O
  • phosphomolybdic acid hydrate H 3 PMo 12 O 40 ⁇ xH 2 O
  • silicomolybdic acid hydrate H 4 SiMo 12 O 40 ⁇ xH 2 O
  • Styrene (St), pyridine, tetrahydrofuran, anhydrous ether, petroleum ether (bp60-90°C), cuprous bromide (CuBr) and neutral alumina (200 mesh) are all analytically pure and purchased from Shanghai Chemical Reagent Co., Ltd.
  • Neutral alumina is activated at 120°C for 2h and placed in a desiccator to cool for later use.
  • Styrene is filtered through a neutral alumina column to remove the polymerization inhibitor and stored at -15°C for later use.
  • Cuprous bromide is purified by glacial acetic acid and protected from light Save it for later use.

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Abstract

提供一种金属氧化物有序交叉纳米线阵列的制备方法以及由该方法制得的金属氧化物有序交叉纳米线阵列材料。该方法以两亲性嵌段共聚物作为模板剂，四氢呋喃等作为溶剂，多金属氧酸盐作为无机前驱体进行合成；其中，嵌段共聚物起到结构导向剂的作用，其亲水端与多金属氧酸盐阴离子通过静电作用力结合，在溶剂中形成核壳柱状胶束，在溶剂挥发过程中自组装形成层层交叉堆叠的有机-无机复合有序纳米结构；在空气中焙烧除掉模板剂，得到组成元素多样的金属氧化物有序交叉纳米线。该纳米线阵列材料具有高比表面积和高结晶度，同时实现了杂原子的均匀掺杂。该方法简单，原料易得，适于放大生产。

Description

金属氧化物有序交叉纳米线阵列及其制备方法 技术领域
本发明属于纳米半导体材料技术领域，具体涉及一种金属氧化物有序交叉纳米线阵列材料及其制备方法。
背景技术
近些年来，金属氧化物纳米材料及其复合材料在光催化，气体传感，能源存储和转化等方面的广泛应用，受到了科学界广泛的关注(Ren,Y.et al.Chem.Soc.Rev.2012,41,4909-4927.；Lee,K.et al.Chem.Rev.2014,114,9385-9454)。其中，一维(1D)金属氧化物半导体纳米材料(纳米线、纳米棒、纳米带、纳米管等)由于其独特的一维纳米形貌和直接电子通道，具有特别突出的物理化学性质(Xia,Y.N.et al.Adv.Mater.2003,15,353-389.；Devan,R.S.et al.Adv.Funct.Mater.2012,22,3326–3370.；Dasgupta,N.P.et al.Adv.Mater.2014,26,2137–2184.；Wang,F.D.et al.Chem.Rev.2016,116,10888-10933.)。过去几十年中，一维金属氧化物纳米材料主要通过水热/溶剂热法、化学气相沉积法(CVD)、阳极氧化等方法合成(Tran,H.D.et al.Adv.Mater.2009,21,1487–1499.；Lee,K.et al.Chem.Rev.2014,114,9385-9454.)。定向自组装技术(DSA)是最近发展起来合成有序纳米线阵列的方法，它通过嵌段共聚物的可控自组装行为来实现特定尺寸的有序纳米图案的制造(Doerk,G.S.et al.Nat.Commun.2014,5,5805.；Kim,J.M.et al.Chem.Mater.2016,28,5680-5688.；Xiong,S.S.et al.ACS Nano2016,10,7855-7865.；Wei,W.et al.Chem.Mater.2016,28,4017-4023.)。然而目前它存在以下几个问题：只能合成高分子聚合物、氧化硅等非晶无定形骨架材料；或者要通过后修饰无机前驱体等步骤繁琐的方法来实现金属氧化物纳米线阵列的合成。对于多层堆叠的交叉纳米线阵列(即“纳米网”)，则要通过多次反复操作的“转移打印”的技术来实现(Jeong,J.W.et al.Adv.Mater.2012,24,3526–3531.；Jeong,J.W.et al.Nat.Commun.2014,5,5387.；Jeong,J.W.et al.Adv.Mater.2016,28,8695–8704.)。这极大地限制了它的实际放大生产和应用。因此开发一种简单方便，一步法直接合成多层交叉有序金属氧化物纳米线阵列的方法具有十分重要的意义。
发明内容
本发明的目的在于提供一种操作简单、控制方便、易于重复的金属氧化物有序交叉纳米线阵列的制备方法。
本发明提供的金属氧化物有序交叉纳米线阵列材料的制备方法，以具有超大分子量疏水段的两亲性嵌段共聚物(PEO-b-PS)作为模板剂，多金属氧酸盐(POMs)作为无机前驱体合成金属氧化物有序交叉纳米线；利用模板剂的亲水端(PEO)与多金属阳酸盐阴离子(SiW 12O 40 4-,PW 12O 40 3-,SiMo 12O 40 4-,PMo 12O 40 3-等)之间的静电作用力形成核壳柱状胶束，通过溶剂挥发诱导自组装(EISA)的方法得到有序介观有机-无机复合结构。利用模板剂的导向作用以及焙烧引起的结构转变，在模板剂脱除后即得到具有高度晶化的有序金属氧化物半导体纳米线材料。通过控制无机前驱体(多金属氧酸盐)的种类可以控制合成Si-WO 3,P-WO 3,Si-MoO 3,P-MoO 3等多种金属氧化物纳米线材料。通过控制嵌段共聚物亲疏水嵌段的分子量可以有效控制纳米线阵列的间距，以及纳米线的直径。利用该种方法得到的有序纳米线材料阵列间距可以控制在20-40nm之间，纳米线的直径在10-20nm之间。制备的具体步骤如下：
(1)将具有大分子量(M n＝15000-35000g mol -1)的两亲性嵌段共聚物(PEO-b-PS)溶解于溶剂中，充分搅拌得到透明溶液，记为溶液A，浓度为1-5wt％；将多金属氧酸盐水合物(H 4SiW 12O 40·xH 2O等)加入到溶剂中,得到透明溶液，记为溶液B，浓度为5-10wt％；将溶液A和溶液B混合，充分搅拌得到透明胶体溶液；
(2)将上述胶体溶液转移到培养皿中，室温下挥发2-12小时；将培养皿转移到70-100℃烘箱中固化12-48小时，得到透明的有机-无机复合膜，将该复合膜从培养皿中刮下来并研磨得到粉末；
(3)将上述粉末置于管式炉中，在氮气气氛下，以升温速率1-3℃/min，升温至350-500℃，焙烧1-2h；再将所得样品在空气中400-450℃焙烧0.5-1h，除去其中的碳，得到晶化的金属氧化物交叉纳米线材料。
其中，步骤(1)中所使用的溶剂为四氢呋喃、甲苯、氯仿、二甲基甲 酰胺中的一种或多种。两亲性嵌段共聚物的PEO嵌段分子量2000～5000g/mol,PS嵌段分子量10000～30000g/mol。所使用的多金属氧酸盐为硅钨酸、磷钨酸、硅钼酸、磷钼酸中的一种或多种。
本发明中，可以通过改变嵌段共聚物疏水嵌段、亲水嵌段的长度，分别控制所合成的纳米线材料的阵列间距和纳米线的直径。
本发明中，使用不同的多金属氧酸盐水合物作为无机前驱体，可以合成由不同元素组成的具有高结晶度和高比表面积的多种金属氧化物纳米线材料(如Si-WO 3、P-WO 3、Si-MoO 3、P-MoO 3等)，以及双金属或多金属复合氧化物材料。合成所需的多金属氧酸盐均为商业化试剂，方便易得。
本发明中，所应用的溶剂挥发诱导自组装结合焙烧结晶的方法具有很好的普适性。任何采用溶剂挥发诱导自组装原理合成纳米材料的方法均可以适用。可以选用旋涂(spin-coating),提拉(dip-coating),或者直接将溶液敞开放置使其挥发等方法合成金属氧化物有序交叉纳米线材料。
本发明中，应用的模板剂原位碳化的方法合成有序介孔金属氧化物材料的普适性。利用带有sp 2杂化碳碳双键的PS段原位转化为无定形炭作为金属氧化物的刚性支撑，然后在空气中焙烧除去残留的碳，从而得到高度有序和高比表面的金属氧化物纳米线材料，任何采用自组装原理合成介孔金属氧化物材料的方法均可以适用。
本发明中，其所合成材料具有独特的“纳米网”形貌。有序排列的金属氧化物纳米线平行于基底，逐层堆叠并垂直交叉，形成具有高的活性比表面积的半导体纳米网络结构。所合成的介孔材料的晶化程度则因所采用的前驱体、所采用的焙烧温度不同而不同。
本发明不同于前人的合成金属氧化物纳米线阵列的方法，直接采用两亲性嵌段共聚物(PEO-b-PS)与多金属氧酸盐(POMs)共组装的方法。由于嵌段共聚物中质子化的亲水嵌段(PEO)能和杂多酸阴离子(SiW 12O 40 4-等)形成强的静电作用力，从而形成均匀的柱状复合胶束，进而在后续的溶剂挥发过程中自组装形成有序排列的介观结构。值得一提的是，在后续加热焙烧脱除高分子模板剂和使骨架晶化(杂多酸热分解转化成对应的金属氧化物)的过程中，会发生类似“奥斯特瓦尔德熟化(Ostwald ripening)”的 过程，最终得到多层交叉有序金属氧化物(Si-WO 3等)纳米线阵列。该材料具有开放的纳米骨架、高的比表面积、高的结晶度以及均匀的非金属杂原子掺杂。这种方法具有操作简单、易于重复、以及条件易控制等优点。
附图说明
图1为金属氧化物有序交叉纳米线材料的FESEM照片。其中，(a)Si-WO 3，(b)P-WO 3，(c)Si-MoO 3，(d)P-MoO 3。
具体实施方式
试剂
聚环氧乙烷单甲醚(PEO，分子量为5000g/mol)、2-溴异丁酰溴、N,N,N',N,'N”―五甲基二亚乙基三胺(PMDETA)从Acros公司购买。其中：PEO5000在30℃真空烘箱除水24h，置于干燥器内保存备用。
硅钨酸水合物(H 4SiW 12O 40·xH 2O)、磷钨酸水合物(H 3PW 12O 40·xH 2O)、磷钼酸水合物(H 3PMo 12O 40·xH 2O)从阿拉丁试剂公司购买，硅钼酸水合物(H 4SiMo 12O 40·xH 2O)从Sigma-Aldrich试剂公司购买。
苯乙烯(St)、吡啶、四氢呋喃、无水乙醚、石油醚(b.p.60–90℃)、溴化亚铜(CuBr)和中性氧化铝(200目)等全部为分析纯，购自上海化学试剂有限公司。
中性氧化铝在120℃活化2h，置于干燥器内冷却备用，苯乙烯经中性氧化铝柱过滤去除阻聚剂后于-15℃保存备用，溴化亚铜经过冰醋酸提纯后蔽光保存备用。
具体制备
实施例1：Si-WO 3有序交叉纳米线材料的合成
(1)将0.10g PEO-b-PS(M n＝20000g mol -1)溶解到5.0mL THF中，搅拌得到均匀溶液A；将0.35g硅钨酸水合物(H 4SiW 12O 40·xH 2O)溶解到2.0mL THF中，搅拌得到均匀溶液B；将溶液A和溶液B混合，搅拌得到淡蓝色透明胶体溶液。
(2)将该溶液转移到培养皿中，室温下挥发2h，将培养皿转移到100℃ 烘箱中进一步挥发溶剂，固化24h，得到透明复合膜。将该复合膜从培养皿中刮下来得到黄色粉末。
(3)将新制样品置于管式炉中，在氮气气氛下，500℃焙烧1h，升温速率是1.0℃/min。再将所得样品在空气中450℃焙烧1h，得到黄绿色的Si-WO 3纳米线料。
实施例2：P-WO 3有序交叉纳米线材料的合成
(1)将0.10g PEO-b-PS(M n＝21000g mol -1)溶解到5.0mL THF中，搅拌得到均匀溶液A；将0.30g磷钨酸水合物(H 3PW 12O 40·xH 2O)溶解到2.0mL THF中，搅拌得到均匀溶液B；将溶液A和溶液B混合，搅拌得到淡蓝色透明胶体溶液。
(2)将该溶液转移到培养皿中，室温下挥发2h，将培养皿转移到100℃烘箱中进一步挥发溶剂，固化48h，得到透明复合膜。将该复合膜从培养皿中刮下来得到黄色粉末。
(3)将新制样品置于管式炉中，在氮气气氛下，450℃焙烧1h，升温速率是1.0℃/min。再将所得样品在空气中450℃焙烧30min，得到黄绿色的P-WO 3纳米线材料。
实施例3：Si-MoO 3有序交叉纳米线材料的合成
(1)将0.10g PEO-b-PS(M n＝18000g mol -1)溶解到5.0mL THF中，搅拌得到均匀溶液A；将0.25g硅钼酸水合物(H 4SiW 12O 40·xH 2O)溶解到2.0mL THF中，搅拌得到均匀溶液B；将溶液A和溶液B混合，搅拌得黄色透明胶体溶液。
(2)将该溶液转移到培养皿中，室温下挥发1h，将培养皿转移到100℃烘箱中进一步挥发溶剂，固化24h，得到透明复合膜。将该复合膜从培养皿中刮下来得到蓝色粉末。
(3)将新制样品置于管式炉中，在氮气气氛下，350℃焙烧2h，升温速率是1.0℃/min。再将所得样品在空气中400℃焙烧30min，得到蓝绿色的Si-MoO 3纳米线材料。
实施例4：P-MoO 3有序交叉纳米线材料的合成
(1)将0.10g PEO-b-PS(M n＝19000g mol -1)溶解到5.0mL THF中，搅 拌得到均匀溶液A；将0.20g磷钼酸水合物(H 3PMo 12O 40·xH 2O)溶解到2.0mL THF中，搅拌得到均匀溶液B；将溶液A和溶液B混合，搅拌得到黄色透明胶体溶液。
(2)将该溶液转移到培养皿中，室温下挥发1h，将培养皿转移到100℃烘箱中进一步挥发溶剂，固化48h，得到透明复合膜。将该复合膜从培养皿中刮下来得到蓝色粉末。
(3)将新制样品置于管式炉中，在氮气气氛下，350℃焙烧2h，升温速率是1.0℃/min。再将所得样品在空气中400℃焙烧30min，得到蓝绿色的P-MoO 3纳米线材料。

Claims (5)

  1. 一种金属氧化物有序交叉纳米线阵列的制备方法，以具有超大分子量疏水段的两亲性嵌段共聚物(PEO-b-PS)作为模板剂，利用模板剂的亲水端(PEO)与多金属阳酸盐阴离子之间的静电作用力形成核壳柱状胶束，通过溶剂挥发诱导自组装得到有序介观有机-无机复合结构；经过焙烧引起结构转变，在模板剂脱除后即得到具有高度晶化的有序金属氧化物半导体纳米线材料；具体步骤如下：
    (1)将具有大分子量(M n＝15000-35000g mol -1)的两亲性嵌段共聚物(PEO-b-PS)溶解于溶剂中，充分搅拌得到透明溶液，记为溶液A，浓度为1-5wt％；将多金属氧酸盐水合物加入到溶剂中，得到透明溶液，记为溶液B，浓度为5-10wt％；将溶液A和溶液B混合，充分搅拌得到透明胶体溶液；
    (2)将上述胶体溶液转移到培养皿中，室温下挥发2-12小时；将培养皿转移到70-100℃烘箱中固化12-48小时，得到透明的有机-无机复合膜，将该复合膜从培养皿中刮下来并研磨得到粉末；
    (3)将上述粉末置于管式炉中，在氮气气氛下，以升温速率1-3℃/min，升温至350-500℃，焙烧1-2h；再将所得样品在空气中400-450℃焙烧0.5-1h，除去其中的碳，得到晶化的金属氧化物交叉纳米线材料。
  2. 根据权利要求1所述的制备方法，其特征在于，步骤(1)中所使用的溶剂为四氢呋喃、甲苯、氯仿、二甲基甲酰胺中的一种或多种；两亲性嵌段共聚物的PEO嵌段分子量2000～5000g/mol,PS嵌段分子量10000～30000g/mol；所使用的多金属氧酸盐为硅钨酸、磷钨酸、硅钼酸、磷钼酸中的一种或多种。
  3. 根据权利要求2所述的制备方法，其特征在于，通过改变嵌段共聚物疏水嵌段、亲水嵌段的长度，分别控制所合成的纳米线材料的阵列间距和纳米线的直径。
  4. 根据权利要求2所述的制备方法，其特征在于，选用不同的金属氧酸盐水合物作为无机前驱体，可以合成由不同元素组成的具有高结晶度和高比表面积的金属氧化物纳米线材料，或者双金属或多金属复合氧化物纳米线材料。
  5. 由权利要求1-4之一所述制备方法得到的金属氧化物有序交叉纳米线阵列材料。
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