WO2020218351A1 - 基板処理方法、半導体製造方法、および、基板処理装置 - Google Patents

基板処理方法、半導体製造方法、および、基板処理装置 Download PDF

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Publication number
WO2020218351A1
WO2020218351A1 PCT/JP2020/017354 JP2020017354W WO2020218351A1 WO 2020218351 A1 WO2020218351 A1 WO 2020218351A1 JP 2020017354 W JP2020017354 W JP 2020017354W WO 2020218351 A1 WO2020218351 A1 WO 2020218351A1
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WIPO (PCT)
Prior art keywords
substrate
organic solvent
atmospheric pressure
pressure plasma
plasma
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PCT/JP2020/017354
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English (en)
French (fr)
Japanese (ja)
Inventor
小林　健司
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株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2020218351A1 publication Critical patent/WO2020218351A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a substrate processing method, a semiconductor manufacturing method, and a substrate processing apparatus.
  • a charge supply step a negative charge is supplied to a substrate including a silicon substrate.
  • a positive voltage is applied to the first electrode arranged on the lower surface of the substrate via the dielectric in parallel with the charge supply step.
  • a negative voltage is applied to the first electrode while keeping the ground connection of the substrate disconnected.
  • the drying step the substrate is dried by removing the insulating liquid from the upper surface of the substrate in parallel with the second voltage application step.
  • the negative charge accumulated inside the substrate repels the first electrode and collects on the upper surface of the substrate. Therefore, an electrical bias occurs in the thin film pattern of the substrate, negative charges are collected at the tip of each thin film pattern, and the tip of each thin film pattern is negatively charged. As a result, a repulsive force acts between adjacent thin film patterns.
  • the surface tension of the liquid acts at the boundary position between the liquid level and the thin film pattern. That is, the attractive force acts between adjacent thin film patterns.
  • the attractive force is canceled by the repulsive force caused by the charging of the thin film pattern. Therefore, the insulating liquid can be removed from the upper surface of the substrate while reducing the force acting on the thin film pattern. As a result, the substrate can be dried while suppressing the collapse of the thin film pattern.
  • the inventor of the present application has conducted diligent research to suppress the collapse of structures such as thin film patterns on the substrate from a viewpoint different from the substrate processing method described in Patent Document 1.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing method, a semiconductor manufacturing method, and a substrate processing apparatus capable of suppressing the collapse of a structure on a substrate.
  • a substrate having a pattern including a plurality of structures on the surface is processed.
  • the substrate treatment method comprises a step of supplying a treatment liquid to the surface of the substrate, a step of supplying a rinse liquid for washing away the treatment liquid to the surface of the substrate, and a step of supplying the rinse liquid to the surface of the substrate. After that, the step of irradiating the surface of the substrate with atmospheric pressure plasma to dry the surface of the substrate is included.
  • the irradiation position of the atmospheric pressure plasma on the surface of the substrate is directed from the central portion to the edge portion of the substrate during the rotation of the substrate. It is preferable to move.
  • the first organic solvent is supplied to the surface of the substrate after the step of supplying the rinsing liquid and before the step of drying the surface of the substrate. It is preferable to further include a step of replacing the rinse liquid on the surface of the substrate with the first organic solvent.
  • the substrate processing method of the present invention is executed in parallel with the step of drying the surface of the substrate, and further includes a step of supplying a second organic solvent to the surface of the substrate.
  • a step of supplying a second organic solvent it is preferable to move the supply position of the second organic solvent on the surface of the substrate from the center portion to the edge portion of the substrate during the rotation of the substrate. ..
  • the supply position of the second organic solvent is preferably the radial outside of the substrate with respect to the irradiation position of the atmospheric pressure plasma.
  • the atmospheric pressure is applied to the surface of the substrate. It is preferable to irradiate with plasma.
  • the atmospheric pressure plasma oxidizes the surfaces of each of the plurality of structures.
  • the atmospheric pressure plasma reduces the surface of each of the plurality of structures.
  • the substrate processing method of the present invention in the step of drying the surface of the substrate, it is preferable to irradiate the boundary portion between the surface of the substrate and the liquid with the atmospheric pressure plasma.
  • a semiconductor substrate having a pattern including a plurality of structures is processed to produce the processed semiconductor substrate.
  • the semiconductor manufacturing method includes a step of supplying a treatment liquid to the surface of the semiconductor substrate, a step of supplying a rinse liquid for washing away the treatment liquid to the surface of the semiconductor substrate, and a step of supplying the rinse liquid to the surface of the semiconductor substrate. After the step, the step of irradiating the surface of the semiconductor substrate with atmospheric pressure plasma to dry the semiconductor substrate is included.
  • the substrate processing apparatus processes a substrate having a pattern including a plurality of structures.
  • the substrate processing apparatus includes a processing liquid supply unit, a rinse liquid supply unit, and a plasma irradiation unit.
  • the treatment liquid supply unit supplies the treatment liquid to the surface of the substrate.
  • the rinse liquid supply unit supplies the rinse liquid for washing away the treatment liquid to the surface of the substrate.
  • the plasma irradiation unit irradiates the surface of the substrate with atmospheric pressure plasma to dry the substrate after the rinse liquid is supplied to the surface of the substrate.
  • the plasma irradiation unit may move the irradiation position of the atmospheric pressure plasma on the surface of the substrate from the center portion to the edge portion of the substrate while the substrate is rotating. preferable.
  • the substrate processing apparatus of the present invention further includes a first organic solvent supply unit.
  • the first organic solvent supply unit supplies the first organic solvent to the surface of the substrate after the time of supplying the rinse liquid and before the time of irradiating the atmospheric pressure plasma. It is preferable to replace the rinse liquid on the surface of the substrate with the first organic solvent.
  • the substrate processing apparatus of the present invention further includes a second organic solvent supply unit.
  • the second organic solvent supply unit preferably supplies the second organic solvent to the surface of the substrate in parallel with the irradiation of the atmospheric pressure plasma. It is preferable that the second organic solvent supply unit moves the supply position of the second organic solvent on the surface of the substrate from the central portion to the edge portion of the substrate during the rotation of the substrate.
  • the supply position of the second organic solvent is preferably the radial outside of the substrate with respect to the irradiation position of the atmospheric pressure plasma.
  • the substrate processing apparatus of the present invention further includes an opposing member.
  • the facing member preferably faces the surface of the substrate and covers above the surface of the substrate. It is preferable that the plasma irradiation unit irradiates the surface of the substrate with the atmospheric pressure plasma when the facing member covers the upper surface of the surface of the substrate.
  • the atmospheric pressure plasma oxidizes the surfaces of each of the plurality of structures.
  • the atmospheric pressure plasma reduces the surface of each of the plurality of structures.
  • the plasma irradiation unit irradiates the atmospheric pressure plasma on the boundary portion between the surface of the substrate and the liquid.
  • the present invention it is possible to provide a substrate processing method, a semiconductor manufacturing method, and a substrate processing apparatus capable of suppressing the collapse of a structure on a substrate.
  • FIG. 1 It is a schematic cross-sectional view which shows the substrate processing apparatus which concerns on Embodiment 1 of this invention.
  • A is a schematic cross-sectional view showing a state of a rinse liquid adhering to the surface of the substrate according to the first embodiment.
  • B is a schematic cross-sectional view showing a state in which the surface of the substrate according to the first embodiment is charged with the same polarity.
  • C is a schematic cross-sectional view showing a state in which the surface of the substrate according to the first embodiment is charged with the same polarity and the rinse liquid is removed from the substrate.
  • A is a schematic plan view showing a scan process by a plasma nozzle according to the first embodiment.
  • FIG. B is a schematic cross-sectional view showing a scan process by the plasma nozzle according to the first embodiment. It is a schematic cross-sectional view which shows the plasma nozzle which concerns on Embodiment 1.
  • FIG. It is a flowchart which shows the substrate processing method which concerns on Embodiment 1.
  • (A) is a schematic plan view showing a scan process by the plasma nozzle and the second organic solvent nozzle according to the third embodiment.
  • (B) is a schematic cross-sectional view showing a scan process by the plasma nozzle and the second organic solvent nozzle according to the third embodiment. It is a flowchart which shows the substrate processing method which concerns on Embodiment 3. It is a schematic cross-sectional view which shows the substrate processing apparatus which concerns on Embodiment 4 of this invention.
  • the same or corresponding parts are designated by the same reference numerals and the description is not repeated.
  • the X-axis, the Y-axis, and the Z-axis are orthogonal to each other, the X-axis and the Y-axis are parallel in the horizontal direction, and the Z-axis is parallel in the vertical direction.
  • diagonal lines indicating the cross section are appropriately omitted.
  • plane view indicates that the object is viewed from vertically above.
  • the substrate processing apparatus 100 processes the substrate W with the processing liquid.
  • the treatment liquid will be referred to as "treatment liquid LQ".
  • the substrate W includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask. Substrates, ceramic substrates, or solar cell substrates.
  • the substrate W has, for example, a substantially disk shape. In the following description of the first embodiment, the substrate W is a semiconductor substrate.
  • FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus 100.
  • the substrate processing apparatus 100 includes a chamber 1, a spin chuck 3, a spin shaft 5, a spin motor 7, a processing liquid nozzle 9, a nozzle moving portion 11, a valve V1, and a pipe P1.
  • a rinse liquid nozzle 13, a valve V2, a pipe P2, a plasma nozzle 15, a nozzle moving portion 17, a valve V3, a pipe P3, a plurality of guards 19, and a control device 21 are provided.
  • the treatment liquid nozzle 9 corresponds to an example of the "treatment liquid supply unit”.
  • the rinse liquid nozzle 13 corresponds to an example of the “rinse liquid supply unit”.
  • the plasma nozzle 15 corresponds to an example of a “plasma irradiation unit”.
  • Chamber 1 has a substantially box shape.
  • the chamber 1 includes a substrate W, a spin chuck 3, a spin shaft 5, a spin motor 7, a processing liquid nozzle 9, a nozzle moving portion 11, a valve V1, a part of a pipe P1, a rinse liquid nozzle 13, a valve V2, and a pipe P2.
  • a part, a plasma nozzle 15, a nozzle moving part 17, a valve V3, a part of a pipe P3, and a plurality of guards 19 are housed.
  • the spin chuck 3 holds the substrate W and rotates. Specifically, the spin chuck 3 rotates the substrate W around the rotation axis AX of the spin chuck 3 while holding the substrate W horizontally in the chamber 1.
  • the spin chuck 3 includes a plurality of chuck members 31 and a spin base 33.
  • the plurality of chuck members 31 are provided on the spin base 33.
  • the plurality of chuck members 31 hold the substrate W in a horizontal posture.
  • the spin base 33 has a substantially disk shape and supports a plurality of chuck members 31 in a horizontal posture.
  • the spin shaft 5 is fixed to the spin base 33. Further, the spin shaft 5 is fixed to the drive shaft of the spin motor 7. Then, the spin motor 7 rotates the spin shaft 5 to rotate the spin base 33 around the rotation axis AX. As a result, the substrate W held by the plurality of chuck members 31 provided on the spin base 33 rotates around the rotation axis AX.
  • the processing liquid nozzle 9 supplies the processing liquid LQ to the surface of the rotating substrate W.
  • the substrate W is processed by the processing liquid LQ.
  • the treatment liquid nozzle 9 supplies the treatment liquid LQ to the surfaces of a plurality of structures constituting the pattern PT of the rotating substrate W.
  • the treatment liquid LQ is, for example, a chemical liquid (for example, an etching liquid).
  • the chemicals are, for example, hydrofluoric acid (HF), hydrofluoric acid (mixed solution of hydrofluoric acid and nitric acid (HNO 3 )), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (mixed solution of hydrofluoric acid and ethylene glycol).
  • the type of the treatment liquid LQ is not particularly limited as long as the substrate W can be treated.
  • the nozzle moving unit 11 moves the processing liquid nozzle 9 between the processing position and the retracted position.
  • the processing position indicates a position above the substrate W.
  • the treatment liquid nozzle 9 supplies the treatment liquid LQ to the surface of the substrate W when it is located at the treatment position.
  • the retracted position indicates a position on the radial side of the substrate W with respect to the substrate W.
  • the nozzle moving unit 11 includes an arm 111, a rotating shaft 113, and a nozzle moving mechanism 115.
  • the arm 111 extends along a substantially horizontal direction.
  • a treatment liquid nozzle 9 is attached to the tip of the arm 111.
  • the arm 111 is coupled to the rotation shaft 113.
  • the rotation shaft 113 extends along a substantially vertical direction.
  • the nozzle moving mechanism 115 rotates the rotation shaft 113 around the rotation axis along the substantially vertical direction, and rotates the arm 111 along the substantially horizontal plane.
  • the treatment liquid nozzle 9 moves along a substantially horizontal plane.
  • the nozzle moving mechanism 115 includes an arm swing motor that rotates the rotating shaft 113 around the rotating axis.
  • the arm swing motor is, for example, a servo motor.
  • the nozzle moving mechanism 115 raises and lowers the rotation shaft 113 along a substantially vertical direction to raise and lower the arm 111.
  • the treatment liquid nozzle 9 moves along the substantially vertical direction.
  • the nozzle moving mechanism 115 includes a ball screw mechanism and an arm elevating motor that applies a driving force to the ball screw mechanism.
  • the arm elevating motor is, for example, a servo motor.
  • the pipe P1 supplies the processing liquid LQ to the processing liquid nozzle 9.
  • the valve V1 switches between starting and stopping the supply of the processing liquid LQ to the processing liquid nozzle 9.
  • the rinse liquid nozzle 13 supplies the rinse liquid to the surface of the rotating substrate W after the substrate W is processed by the treatment liquid LQ. Specifically, the rinse liquid nozzle 13 supplies the rinse liquid to the surfaces of a plurality of structures constituting the pattern PT of the rotating substrate W.
  • the rinse solution will be referred to as "rinse solution LN".
  • the rinse liquid LN washes away the treatment liquid LQ.
  • the rinse liquid LN is, for example, deionized water, carbonated water, electrolytic ionized water, hydrogen water, ozone water, or hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm).
  • the type of rinse liquid LN is not particularly limited as long as the substrate W can be rinsed.
  • the pipe P2 supplies the rinse liquid LN to the rinse liquid nozzle 13.
  • the valve V2 switches between starting and stopping the supply of the rinse liquid LN to the rinse liquid nozzle 13.
  • the pipe P3 supplies gas to the plasma nozzle 15.
  • the valve V3 switches between starting and stopping the supply of gas to the plasma nozzle 15.
  • the gas is, for example, air, an inert gas, or oxygen.
  • the inert gas is, for example, nitrogen, argon, helium, or hydrogen.
  • the type of gas is not particularly limited as long as plasma can be generated.
  • the plasma nozzle 15 irradiates the surface of the rotating substrate W with atmospheric pressure plasma to dry the surface of the substrate W after supplying the rinse liquid LN to the substrate W. Specifically, the plasma nozzle 15 irradiates the surfaces of a plurality of structures constituting the pattern PT of the rotating substrate W with atmospheric pressure plasma. Therefore, according to the first embodiment, when the substrate W is dried, a plurality of structures constituting the pattern PT of the substrate W are charged with the same polarity by the atmospheric pressure plasma. As a result, a repulsive force acts between the plurality of structures of the substrate W, and the collapse of the plurality of structures due to the surface tension of the rinse liquid LN can be suppressed in the substrate W. Atmospheric pressure plasma is plasma generated in atmospheric pressure.
  • the plasma nozzle 15 emits plasma. That is, the plasma nozzle 15 ionizes the gas supplied from the pipe P3 to generate plasma, and emits the plasma together with the gas. In other words, the plasma nozzle 15 puts the plasma on the air flow and emits it. In other words, the plasma nozzle 15 generates and emits a plasma flow.
  • the nozzle moving unit 17 moves the plasma nozzle 15 between the irradiation position and the retracted position.
  • the irradiation position indicates a position above the substrate W.
  • the plasma nozzle 15 irradiates the substrate W with plasma when it is located at the irradiation position.
  • the retracted position indicates a position on the radial side of the substrate W with respect to the substrate W.
  • the nozzle moving unit 17 includes an arm 171, a rotating shaft 173, and a nozzle moving mechanism 175.
  • a plasma nozzle 15 is attached to the tip of the arm 171.
  • the arm 171 is driven by a rotation shaft 173 and a nozzle movement mechanism 175 to rotate along a substantially horizontal plane or move up and down along a substantially vertical direction.
  • the configurations of the arm 171 and the rotating shaft 173 and the nozzle moving mechanism 175 are the same as the configurations of the arm 111, the rotating shaft 113, and the nozzle moving mechanism 115, respectively.
  • Each of the plurality of guards 19 has a substantially tubular shape.
  • Each of the plurality of guards 19 receives the liquid (treatment liquid LQ or rinse liquid LN) discharged from the substrate W.
  • the guard 19 is provided according to the type of liquid discharged from the substrate W.
  • the control device 21 controls each configuration of the substrate processing device 100.
  • the control device 21 includes a computer.
  • the control device 21 includes a processor such as a CPU (Central Processing Unit) and a storage device.
  • the storage device stores data and computer programs.
  • the storage device includes a main storage device such as a semiconductor memory and an auxiliary storage device such as a semiconductor memory and / or a hard disk drive.
  • the storage device may include removable media.
  • the processor of the control device 21 executes a computer program stored in the storage device of the control device 21, and executes a spin chuck 3, a spin motor 7, a nozzle moving unit 11, a valve V1, a valve V2, a plasma nozzle 15, and a nozzle moving.
  • the unit 17, the valve V3, and a plurality of guards 19 are controlled.
  • FIG. 2A is a schematic cross-sectional view showing the state of the rinse liquid LN adhering to the surface of the substrate W.
  • FIG. 2B is a schematic cross-sectional view showing a state in which the surface of the substrate W is charged with the same polarity.
  • FIG. 2C is a schematic cross-sectional view showing a state in which the surface of the substrate W is charged to the same polarity and the rinse liquid LN is removed from the substrate W.
  • FIGS. 2A to 2C a part of the surface of the substrate W is enlarged and shown.
  • the substrate W has a pattern PT on its surface.
  • the substrate W has a substrate main body W1 and a pattern PT.
  • the substrate body W1 is made of silicon.
  • the pattern PT is, for example, a fine pattern.
  • the pattern PT includes a plurality of structures W2.
  • the structure W2 is, for example, a fine structure.
  • Each of the plurality of structures W2 extends along a predetermined direction D.
  • the predetermined direction D indicates a direction that intersects the surface W11 of the substrate body W1.
  • the predetermined direction D indicates a direction substantially orthogonal to the surface W11 of the substrate body W1.
  • Each of the plurality of structures W2 is composed of a single layer or a plurality of layers.
  • the structure W2 is an insulating layer, a semiconductor layer, or a conductor layer.
  • the structure W2 may include an insulating layer, a semiconductor layer, a conductor layer, an insulating layer, a semiconductor layer, and a conductor layer. Two or more of them may be included.
  • the insulating layer is, for example, a silicon oxide film or a silicon nitride film.
  • the semiconductor layer is, for example, a polysilicon film or an amorphous silicon film.
  • the conductor layer is, for example, a metal film.
  • the metal film is, for example, a film containing at least one of titanium, tungsten, copper, and aluminum.
  • the rinse liquid LN when the rinse liquid LN is supplied to the surface of the substrate W after the treatment with the treatment liquid LQ, the rinse liquid LN adheres to the surface of the substrate W.
  • the rinse liquid LN permeates the gaps between the plurality of structures W2 on the substrate W.
  • the repulsive force RF acting between the structures W2 is increased by the atmospheric pressure plasma PM before the attractive force AF based on the surface tension of the rinse liquid LN causes the structure W2 to collapse.
  • the collapse of the plurality of structures W2 due to the attractive force AF can be suppressed.
  • an inert gas promoting oxidation for example, nitrogen, argon, or helium
  • oxygen is supplied to the plasma nozzle 15 from the pipe P3, for example.
  • the plasma nozzle 15 ionizes air, an inert gas that promotes oxidation, or oxygen to generate atmospheric pressure plasma PM.
  • the atmospheric pressure plasma PM irradiates the surface of the structure W2 of the substrate W
  • the atmospheric pressure plasma PM oxidizes each surface of the plurality of structures W2 of the substrate W.
  • each surface of the plurality of structures W2 is negatively charged (minus).
  • the air that is the source of the atmospheric pressure plasma PM that promotes oxidation, the inert gas that promotes oxidation (eg, nitrogen, argon, or helium), and oxygen are relatively easy to handle. Therefore, according to the first embodiment, the atmospheric pressure plasma PM can be easily generated.
  • the plasma nozzle 15 ionizes the inert gas that promotes reduction. Generates atmospheric pressure plasma PM.
  • the atmospheric pressure plasma PM when the atmospheric pressure plasma PM is irradiated on the surface of the structure W2 of the substrate W, the atmospheric pressure plasma PM reduces each surface of the plurality of structures W2 of the substrate W. As a result, each surface of the plurality of structures W2 is positively charged (plus).
  • the structure W2 is silicon and a natural oxide film (silicon oxide film) is formed on the surface of the structure W2, the natural oxide film is reduced by the atmospheric pressure plasma PM to become silicon. Therefore, in this case, the step only for removing the natural oxide film can be omitted.
  • FIG. 3A is a schematic plan view showing a scanning process of the substrate W by the plasma nozzle 15.
  • FIG. 3B is a schematic cross-sectional view showing a scanning process of the substrate W by the plasma nozzle 15.
  • the rinse liquid LN adhering to the substrate W is shown by dot hatching in order to make the drawings easier to understand.
  • the scanning process by the plasma nozzle 15 is such that the irradiation position of the atmospheric pressure plasma PM with respect to the surface of the substrate W forms an arc-shaped locus TJ in a plan view.
  • it is a process of irradiating the surface of the substrate W with atmospheric pressure plasma PM while moving the plasma nozzle 15.
  • the locus TJ passes through the central CT and the edge EG of the substrate W.
  • the central portion CT indicates a portion of the substrate W through which the rotation axis AX passes.
  • the edge portion EG indicates the peripheral edge portion of the substrate W.
  • the scanning process of the substrate W by the plasma nozzle 15 is executed while the substrate W is rotating. That is, the plasma nozzle 15 moves the irradiation position of the atmospheric pressure plasma PM on the surface of the substrate W from the central CT of the substrate W toward the edge EG while the substrate W is rotating. Therefore, according to the first embodiment, the plurality of structures W2 of the substrate W are combined by the atmospheric pressure plasma PM while discharging the rinse liquid LN from the central CT of the substrate W toward the edge EG by the atmospheric pressure plasma PM. It can be charged to polarity. As a result, the surfaces of the plurality of structures W2 on the substrate W can be effectively dried while suppressing the collapse of the plurality of structures W2.
  • the substrate W is mainly dried by the atmospheric pressure plasma PM.
  • the plasma nozzle 15 executes a scanning process of the substrate W so that the rinse liquid LN is discharged from the substrate W by the atmospheric pressure plasma PM before the rinse liquid LN is discharged from the substrate W by centrifugal force.
  • the plasma nozzle 15 irradiates the surface of the substrate W with atmospheric pressure plasma PM by scanning processing to make the surface of the substrate W having the same polarity. Charge.
  • a repulsive force RF acts between the plurality of structures W2 before the rinse liquid LN is discharged from the substrate W by centrifugal force.
  • a repulsive force RF acts between the plurality of structures W2 before the rinse liquid LN is discharged from the substrate W by centrifugal force.
  • the plasma nozzle 15 irradiates the atmospheric pressure plasma PM on the boundary portion BD between the surface of the substrate W and the rinse liquid LN. Therefore, the surfaces of the plurality of structures W2 of the substrate W can be charged with the same polarity substantially at the same time as the surfaces of the plurality of structures W2 are dried. As a result, the collapse of the plurality of structures W2 can be more effectively suppressed when the substrate W is dried.
  • the rinse liquid LN corresponds to an example of "liquid".
  • the plasma nozzle 15 moves in the predetermined direction DA to execute the scanning process on the substrate W.
  • the predetermined direction DA indicates a direction from the central portion CT of the substrate W toward the edge portion EG.
  • the scanning process of the substrate W by the plasma nozzle 15 is not limited to the case where the plasma nozzle 15 is moved so as to form a locus TJ.
  • the plasma nozzle 15 moves from the central CT of the substrate W to the edge EG. It may move linearly toward (that is, toward the predetermined direction DA).
  • FIG. 4 is a schematic cross-sectional view showing the plasma nozzle 15.
  • the plasma nozzle 15 includes a first electrode 151 and a second electrode 153.
  • the first electrode 151 has a substantially columnar shape.
  • the first electrode 151 is arranged in the flow path FW in the plasma nozzle 15. Gas is supplied to the flow path FW from the pipe P5.
  • the second electrode 453 has a substantially cylindrical shape.
  • the second electrode 153 is installed on the outer peripheral surface of the plasma nozzle 15.
  • the board processing device 100 further includes an AC power supply 16.
  • the AC power supply 16 applies an AC voltage between the first electrode 151 and the second electrode 153.
  • the atmospheric pressure plasma PM is emitted from the plasma nozzle 15 together with the gas.
  • the first electrode 151, the second electrode 153, and the AC power supply 16 form a plasma generator 18.
  • the configuration of the plasma generator 18 is not particularly limited as long as plasma can be generated. Further, the arrangement of the plasma generator 18 is not particularly limited as long as the substrate W can be irradiated with the atmospheric pressure plasma PM.
  • the plasma generator 18 may be arranged outside the chamber 1, or may be arranged inside the chamber 1, for example.
  • Each of the first electrode 151 and the second electrode 153 is formed of, for example, a carbon-containing resin.
  • the carbon is, for example, a carbon nanotube.
  • the resin is, for example, a fluororesin.
  • the fluororesin is, for example, polytetrafluoroethylene (tetrafluoride) or polychlorotrifluoroethylene (trifluoride).
  • the substrate processing apparatus 100 executes the substrate processing method.
  • the substrate W having the pattern PT including the plurality of structures W2 is processed.
  • FIG. 5 is a flowchart showing a substrate processing method. As shown in FIG. 5, the substrate processing method includes steps S1 to S5. Steps S1 to S5 are executed according to the control by the control device 21.
  • step S1 the transfer robot (not shown) carries the substrate W into the substrate processing device 100. Then, the spin chuck 3 holds the substrate W. Further, the spin motor 7 drives the spin chuck 3, and the spin chuck 3 starts the rotation of the substrate W.
  • the processing liquid nozzle 9 supplies the processing liquid LQ to the surface of the rotating substrate W. Specifically, the treatment liquid nozzle 9 supplies the treatment liquid LQ to a plurality of structures W2 on the substrate W. As a result, the substrate W is processed by the processing liquid LQ.
  • the treatment liquid LQ is, for example, hydrofluoric acid.
  • the rotation speed of the substrate W in step S2 is, for example, 400 rpm.
  • step S3 the rinse liquid nozzle 13 supplies the rinse liquid LN to the rotating substrate W. Specifically, the rinse liquid nozzle 13 supplies the rinse liquid LN to the plurality of structures W2 of the substrate W. As a result, the processing liquid LQ on the substrate W is washed away by the rinsing liquid LN, and the substrate W is washed.
  • the rotation speed of the substrate W in step S3 is, for example, 800 rpm to 1000 rpm.
  • the rotation speed of the substrate W is set to, for example, ultra-low speed or zero rpm. Such a state of the substrate W is described as a "paddle state".
  • step S4 the plasma nozzle 15 irradiates the surface of the rotating substrate W with atmospheric pressure plasma PM to dry the substrate W. That is, the plasma nozzle 15 irradiates the surface of the rotating substrate W with atmospheric pressure plasma PM to dry the substrate W after the step S3 of supplying the rinse liquid LN to the surface of the substrate W. Specifically, the plasma nozzle 15 irradiates the surfaces of the plurality of structures W2 of the substrate W with atmospheric pressure plasma PM to dry the surfaces of the plurality of structures W2 of the substrate W. Then, the spin motor 7 stops the spin chuck 3, and the spin chuck 3 stops the rotation of the substrate W.
  • step S4 during the rotation of the substrate W, the irradiation position of the atmospheric pressure plasma PM on the surface of the substrate W is moved from the central CT of the substrate W toward the edge EG. Further, in step S4, the atmospheric pressure plasma PM is irradiated to the boundary portion BD between the surface of the substrate W and the rinse liquid LN.
  • the rotation speed of the substrate W in step S3 is, for example, 5 rpm to 10 rpm. In the general spin-drying process, the rotation speed of the substrate W is, for example, 1600 rpm to 2000 rpm.
  • the rotation speed of the substrate W in the step S4 is lower than, for example, the rotation speed of the substrate W in the step S2.
  • the rotation speed of the substrate W in the step S4 is lower than, for example, the rotation speed of the substrate W in the step S3.
  • the rotation speed of the substrate W in the step S4 is, for example, equal to the rotation speed of the substrate W in the paddle state in the step S3, or higher than the rotation speed of the substrate W in the paddle state.
  • step S5 the transfer robot (not shown) carries out the substrate W from the substrate processing device 100. Then, the process ends.
  • the plurality of structures W2 of the substrate W are charged with the same polarity by the atmospheric pressure plasma PM.
  • a repulsive force RF acts between the plurality of structures W2 on the substrate W, and the collapse of the plurality of structures W2 due to the surface tension of the rinse liquid LN can be suppressed.
  • the semiconductor substrate W having the pattern PT including the plurality of structures W2 is processed by the substrate processing method including the steps S1 to S5, and the processed semiconductor substrate W is used.
  • step S4 When the treatment with the treatment liquid LQ and the cleaning with the rinsing liquid LN are one step, a plurality of steps may be included before the step S4.
  • the treatment liquid LQ in step S2 is hydrofluoric acid
  • step S3 is executed
  • step S3 is executed
  • step S3 is executed
  • step S3 is executed
  • step S3 is executed
  • step S3 is executed
  • step S3 is executed
  • step S3 a step of performing treatment using SC1 as the treatment liquid LQ
  • step S4 The step of performing the cleaning using the rinse liquid LN may be executed, and then the step S4 may be executed.
  • Embodiment 2 The substrate processing apparatus 100A according to the second embodiment of the present invention will be described with reference to FIGS. 6 and 7.
  • the second embodiment is mainly different from the first embodiment in that the rinse liquid LN is supplied to the substrate W and then the organic solvent is supplied to the substrate W.
  • the points that the second embodiment differs from the first embodiment will be mainly described.
  • FIG. 6 is a schematic cross-sectional view showing the substrate processing apparatus 100A according to the second embodiment.
  • the substrate processing device 100A further includes a fluid supply unit 41, a unit operating unit 42, a valve V4, and a pipe P4 in addition to the configuration of the substrate processing device 100 shown in FIG.
  • the chamber 1 accommodates the fluid supply unit 41, the unit operating unit 42, and a part of the pipe P4.
  • the fluid supply unit 41 is located above the spin chuck 3.
  • the fluid supply unit 41 includes a blocking plate 411, a support shaft 413, and a first organic solvent nozzle 415.
  • the first organic solvent nozzle 415 corresponds to an example of the “first organic solvent supply unit”.
  • the blocking plate 411 has, for example, a substantially disk shape.
  • the diameter of the blocking plate 411 is, for example, substantially the same as the diameter of the substrate W. However, the diameter of the blocking plate 411 may be slightly smaller or slightly larger than the diameter of the substrate W.
  • the blocking plate 411 is arranged so that the lower surface of the blocking plate 411 is substantially horizontal. Further, the blocking plate 411 is arranged so that the central axis of the blocking plate 411 is located on the rotation axis AX of the spin chuck 3. The lower surface of the blocking plate 411 faces the substrate W held by the spin chuck 3.
  • the blocking plate 411 is connected to the lower end of the support shaft 413 in a horizontal posture.
  • the unit operating unit 42 raises or lowers the fluid supply unit 41 between the proximity position and the retracted position.
  • the proximity position indicates a position where the blocking plate 411 descends and approaches the upper surface of the substrate W at a predetermined interval.
  • the blocking plate 411 covers the surface of the substrate W and blocks above the surface of the substrate W. That is, in the close position, the blocking plate 411 faces the surface of the substrate W and covers above the surface of the substrate W.
  • the retracted position is above the close position and indicates a position where the blocking plate 411 rises and is separated from the substrate W. In FIG. 6, the blocking plate 411 is located at the retracted position.
  • the unit operating unit 42 includes a ball screw mechanism and an elevating motor that applies a driving force to the ball screw mechanism.
  • the elevating motor is, for example, a servo motor.
  • the unit operating unit 42 rotates the fluid supply unit 41 at a close position.
  • the unit operating unit 42 includes a motor and a transmission mechanism that transmits the rotation of the motor to the fluid supply unit 41.
  • the first organic solvent nozzle 415 of the fluid supply unit 41 is arranged inside the blocking plate 411 and the support shaft 413. The tip of the first organic solvent nozzle 415 is exposed from the lower surface of the blocking plate 411.
  • the pipe P4 supplies the first organic solvent SL1 to the first organic solvent nozzle 415.
  • the valve V4 switches between starting and stopping the supply of the first organic solvent SL1 to the first organic solvent nozzle 415. When the valve V4 is opened, the first organic solvent SL1 is supplied to the first organic solvent nozzle 415.
  • the first organic solvent nozzle 415 supplies the first organic solvent SL1 to the surface of the rotating substrate W. Specifically, after the time of supplying the rinse liquid LN and before the time of irradiating the atmospheric pressure plasma PM, the first organic solvent nozzle 415 puts the first organic solvent SL1 on the surface of the substrate W. Is supplied to replace the rinse liquid LN on the surface of the substrate W with the first organic solvent SL1. That is, the first organic solvent nozzle 415 supplies the first organic solvent SL1 to the surfaces of the plurality of structures W2 of the substrate W, and the rinse liquid LN adhering to the surfaces of the plurality of structures W2 is the first organic. Replace with solvent SL1.
  • the first organic solvent SL1 is, for example, a liquid.
  • the surface tension of the first organic solvent SL1 is smaller than the surface tension of the rinse liquid LN. Therefore, according to the second embodiment, by substituting the rinse liquid LN with the first organic solvent SL1, the collapse of the plurality of structures W2 of the substrate W can be more effectively suppressed.
  • the first organic solvent SL1 is, for example, IPA (isopropyl alcohol) or HFE (hydrofluoro ether).
  • the substrate processing apparatus 100A executes the substrate processing method.
  • the substrate W having the pattern PT including the plurality of structures W2 is processed.
  • FIG. 7 is a flowchart showing a substrate processing method. As shown in FIG. 7, the substrate processing method includes steps S11 to S16. Steps S11 to S16 are executed according to the control by the control device 21.
  • the steps S11 to S13 are the same as the steps S1 to S3 shown in FIG. 5, respectively, and the description thereof will be omitted.
  • the first organic solvent nozzle 415 supplies the first organic solvent SL1 to the surface of the rotating substrate W. That is, the first organic solvent nozzle 415 applies the first organic solvent SL1 to the surface of the substrate W after the step S13 of supplying the rinse liquid LN and before the step S15 of drying the surface of the substrate W.
  • the rinse liquid LN on the surface of the substrate W is replaced with the first organic solvent SL1.
  • the first organic solvent nozzle 415 supplies the first organic solvent SL1 to the surfaces of the plurality of structures W2 of the substrate W, and first supplies the rinse liquid LN adhering to the plurality of structures W2. Replace with organic solvent SL1.
  • the rotation speed of the substrate W in step S14 is, for example, 800 rpm to 1000 rpm.
  • the rotation speed of the substrate W is set to, for example, ultra-low speed or zero rpm. Such a state of the substrate W is described as a "paddle state".
  • step S15 the plasma nozzle 15 irradiates the surface of the substrate W with atmospheric pressure plasma PM to dry the substrate W. Specifically, the plasma nozzle 15 irradiates the surfaces of the plurality of structures W2 of the substrate W with atmospheric pressure plasma PM to dry the surfaces of the plurality of structures W2 of the substrate W. Then, the spin motor 7 stops the spin chuck 3, and the spin chuck 3 stops the rotation of the substrate W.
  • the rotation speed of the substrate W in step S15 is, for example, 5 rpm to 10 rpm.
  • the rotation speed of the substrate W in the step S15 is lower than, for example, the rotation speed of the substrate W in the step S12. Further, the rotation speed of the substrate W in the step S15 is lower than, for example, the rotation speed of the substrate W in the step S13. Further, the rotation speed of the substrate W in the step S15 is lower than, for example, the rotation speed of the substrate W in the step S14.
  • the rotation speed of the substrate W in the step S15 is, for example, equal to the rotation speed of the substrate W in the paddle state in the step S14, or higher than the rotation speed of the substrate W in the paddle state.
  • step S16 the transfer robot (not shown) carries out the substrate W from the substrate processing device 100A. Then, the process ends.
  • the plurality of structures W2 of the substrate W are charged with the same polarity by the atmospheric pressure plasma PM.
  • the repulsive force RF acts between the plurality of structures W2 of the substrate W, and the collapse of the plurality of structures W2 due to the surface tension of the first organic solvent SL1 can be suppressed.
  • the surface tension of the first organic solvent SL1 is smaller than the surface tension of the rinse liquid LN. Therefore, the collapse of the plurality of structures W2 can be effectively suppressed.
  • the second embodiment has the same effect as that of the first embodiment.
  • the semiconductor substrate W having the pattern PT including the plurality of structures W2 is processed by the substrate processing method including the steps S11 to S16, and the processed semiconductor substrate W is used.
  • step S15 When the treatment with the treatment liquid LQ, the cleaning with the rinse liquid LN, and the replacement with the first organic solvent SL1 are set as one step, a plurality of steps may be included before the step S15.
  • the treatment liquid LQ in step S12 is hydrofluoric acid
  • steps S13 and S14 are executed, and further, after step S14, a step of performing processing using SC1 as the treatment liquid LQ is executed.
  • a step of performing cleaning using the rinse liquid LN and a step of performing replacement with the first organic solvent SL1 may be executed, and then step S15 may be executed.
  • the substrate W is mainly dried by the atmospheric pressure plasma PM.
  • the plasma nozzle 15 is such that the first organic solvent SL1 is discharged from the substrate W by the atmospheric pressure plasma PM before the first organic solvent SL1 is discharged from the substrate W by centrifugal force. Perform the scanning process. In other words, before the first organic solvent SL1 is discharged from the substrate W by centrifugal force, the plasma nozzle 15 irradiates the surface of the substrate W with atmospheric pressure plasma PM by scanning processing to make the surface of the substrate W the same. Charge to polarity.
  • a repulsive force RF acts between the plurality of structures W2 before the first organic solvent SL1 is discharged from the substrate W by centrifugal force.
  • a repulsive force RF acts between the plurality of structures W2 before the first organic solvent SL1 is discharged from the substrate W by centrifugal force.
  • the plasma nozzle 15 irradiates the boundary portion between the surface of the substrate W and the first organic solvent SL1 with atmospheric pressure plasma PM. Therefore, the surfaces of the plurality of structures W2 of the substrate W can be charged with the same polarity substantially at the same time as the surfaces of the plurality of structures W2 are dried. As a result, the collapse of the plurality of structures W2 can be more effectively suppressed when the substrate W is dried.
  • the first organic solvent SL1 corresponds to an example of "liquid".
  • the substrate processing apparatus 100B according to the third embodiment of the present invention will be described with reference to FIGS. 8 to 10.
  • the third embodiment is mainly different from the second embodiment in that the organic solvent is supplied to the substrate W in parallel with the irradiation of the atmospheric pressure plasma PM.
  • the points that the third embodiment is different from the second embodiment will be mainly described.
  • FIG. 8 is a schematic cross-sectional view showing the substrate processing apparatus 100B according to the third embodiment.
  • the substrate processing apparatus 100B further includes a second organic solvent nozzle 43, a valve V5, and a pipe P5 in addition to the configuration of the substrate processing apparatus 100A shown in FIG.
  • the chamber 1 accommodates the second organic solvent nozzle 43 and a part of the pipe P5.
  • the second organic solvent nozzle 43 corresponds to an example of the “second organic solvent supply unit”.
  • the second organic solvent nozzle 43 is attached to the tip of the arm 171 so that the position of the second organic solvent nozzle 43 with respect to the plasma nozzle 15 is kept constant.
  • the second organic solvent nozzle 43 supplies the second organic solvent SL2 to the surface of the substrate W in parallel with the irradiation of the atmospheric pressure plasma PM by the plasma nozzle 15.
  • the pipe P5 supplies the second organic solvent SL2 to the second organic solvent nozzle 43.
  • the valve V5 switches between starting and stopping the supply of the second organic solvent SL2 to the second organic solvent nozzle 43. When the valve V5 is opened, the second organic solvent SL2 is supplied to the second organic solvent nozzle 43.
  • the second organic solvent SL2 is, for example, a liquid.
  • the surface tension of the second organic solvent SL2 is smaller than the surface tension of the rinse liquid LN.
  • the second organic solvent SL2 is, for example, IPA or HFE.
  • the second organic solvent SL2 is the same as the first organic solvent SL1.
  • FIG. 9A is a schematic plan view showing a scanning process of the substrate W by the plasma nozzle 15 and the second organic solvent nozzle 43.
  • FIG. 9B is a schematic cross-sectional view showing a scanning process of the substrate W by the plasma nozzle 15 and the second organic solvent nozzle 43.
  • the first organic solvent SL1 adhering to the substrate W is indicated by “thin dot hatching” in order to make the drawings easy to understand.
  • the second organic solvent SL2 adhering to the substrate W is indicated by "dark dot hatching".
  • the scanning process by the plasma nozzle 15 and the second organic solvent nozzle 43 is executed after the first organic solvent SL1 is supplied to the surface of the substrate W by the first organic solvent nozzle 415.
  • the scanning process by the plasma nozzle 15 and the second organic solvent nozzle 43 means the irradiation position of the atmospheric pressure plasma PM on the surface of the substrate W and the supply of the second organic solvent SL2 in a plan view. While moving the plasma nozzle 15 and the second organic solvent nozzle 43 so that the position forms an arcuate locus TJ, the irradiation of the atmospheric pressure plasma PM and the supply of the second organic solvent SL2 are applied to the surface of the substrate W. This is the processing to be performed.
  • the locus TJ passes through the central CT and the edge EG of the substrate W.
  • the moving speed for example, angular velocity
  • the second organic solvent nozzle 43 is located on the radial side of the substrate W with respect to the plasma nozzle 15.
  • the scanning process of the substrate W by the plasma nozzle 15 and the second organic solvent nozzle 43 is executed during the rotation of the substrate W. That is, the plasma nozzle 15 moves the irradiation position of the atmospheric pressure plasma PM on the surface of the substrate W from the central CT of the substrate W toward the edge EG while the substrate W is rotating.
  • the second organic solvent nozzle 43 moves the supply position of the second organic solvent SL2 on the surface of the substrate W from the central CT of the substrate W toward the edge EG during the rotation of the substrate W.
  • the supply position of the second organic solvent SL2 is outside the radial direction of the substrate W with respect to the irradiation position of the atmospheric pressure plasma PM.
  • the second organic solvent nozzle 43 is formed between the surface of the substrate W and the first organic solvent SL1.
  • the second organic solvent SL2 is supplied to the boundary portion from the radial outside of the substrate W from the irradiation position of the atmospheric pressure plasma PM. Therefore, according to the first embodiment, the first organic solvent SL1 and the second organic solvent SL2 are supplied to the substrate W while supplying the second organic solvent SL2 which is fresher than the first organic solvent SL1 already attached to the substrate W. Can be discharged from.
  • the collapse of the plurality of structures W2 of the substrate W can be more effectively suppressed.
  • the surface of the plurality of structures W2 of the substrate W can be dried.
  • the first organic solvent SL1 already adhering to the substrate W absorbs water by the time the atmospheric pressure plasma PM is irradiated, and the first organic solvent SL1 is more than the time when the first organic solvent SL1 is supplied. Surface tension may increase slightly. Therefore, the surface tension of the fresh second organic solvent SL2 is smaller than the surface tension of the first organic solvent SL1 already attached to the substrate W. In particular, when the rotation speed of the substrate W is once set to ultra-low speed or zero after the supply of the first organic solvent SL1 (that is, when the substrate W is put into a paddle state), the first organic solvent SL1 removes water. It becomes easy to absorb, and the surface tension of the first organic solvent SL1 may be slightly increased.
  • drying the substrate W by irradiating the substrate W with atmospheric pressure plasma PM while supplying the second organic solvent SL2 which is fresh and has a small surface tension causes the plurality of structures W2 of the substrate W to collapse. It is particularly effective from the viewpoint of suppressing.
  • the substrate W is mainly dried by the atmospheric pressure plasma PM.
  • the first organic solvent SL1 and the second organic solvent SL2 are separated by the atmospheric pressure plasma PM before the first organic solvent SL1 and the second organic solvent SL2 are discharged from the substrate W by centrifugal force.
  • the scanning process of the substrate W is executed so as to be discharged from the substrate W.
  • the plasma nozzle 15 irradiates the surface of the substrate W with atmospheric pressure plasma PM by scanning processing.
  • the surface of the substrate W is charged with the same polarity. Therefore, a repulsive force RF acts between the plurality of structures W2 before the first organic solvent SL1 and the second organic solvent SL2 are discharged from the substrate W by centrifugal force. As a result, the collapse of the plurality of structures W2 due to the surface tension of the first organic solvent SL1 and the second organic solvent SL2 can be effectively suppressed in the substrate W.
  • the plasma nozzle 15 irradiates the boundary portion BD between the surface of the substrate W and the second organic solvent SL2 with atmospheric pressure plasma PM. Therefore, the surfaces of the plurality of structures W2 of the substrate W can be charged with the same polarity substantially at the same time as the surfaces of the plurality of structures W2 are dried. As a result, the collapse of the plurality of structures W2 can be more effectively suppressed when the substrate W is dried.
  • the second organic solvent SL2 corresponds to an example of "liquid".
  • the plasma nozzle 15 and the second organic solvent nozzle 43 move in the predetermined direction DA to execute the scanning process on the substrate W.
  • the predetermined direction DA indicates a direction from the central portion CT of the substrate W toward the edge portion EG.
  • the scanning process of the substrate W by the plasma nozzle 15 and the second organic solvent nozzle 43 is not limited to the case where the plasma nozzle 15 and the second organic solvent nozzle 43 are moved so as to form the locus TJ, for example, the plasma nozzle.
  • the 15 and the second organic solvent nozzle 43 may move linearly from the central portion CT of the substrate W toward the edge portion EG (that is, toward the predetermined direction DA).
  • the substrate processing apparatus 100B executes the substrate processing method.
  • the substrate W having the pattern PT including the plurality of structures W2 is processed.
  • FIG. 10 is a flowchart showing a substrate processing method. As shown in FIG. 10, the substrate processing method includes steps S21 to S27. Steps S21 to S27 are executed according to the control by the control device 21.
  • the steps S21 to S24 are the same as the steps S11 to S14 shown in FIG. 7, respectively, and the description thereof will be omitted.
  • step S24 step S25 and step S26 are executed in parallel.
  • step S25 the second organic solvent nozzle 43 supplies the second organic solvent SL2 to the surface of the rotating substrate W. Specifically, the second organic solvent nozzle 43 supplies the second organic solvent SL2 to the surfaces of the plurality of structures W2 on the substrate W.
  • step S26 in parallel with step S25, the plasma nozzle 15 irradiates the surface of the substrate W with atmospheric pressure plasma PM to dry the substrate W. Specifically, the plasma nozzle 15 irradiates the surfaces of the plurality of structures W2 of the substrate W with atmospheric pressure plasma PM to dry the surfaces of the plurality of structures W2 of the substrate W. Then, the spin motor 7 stops the spin chuck 3, and the spin chuck 3 stops the rotation of the substrate W.
  • step S27 the transfer robot (not shown) carries out the substrate W from the substrate processing device 100C. Then, the process ends.
  • the plurality of structures W2 of the substrate W are charged with the same polarity by the atmospheric pressure plasma PM.
  • a repulsive force RF acts between the plurality of structures W2 of the substrate W, and the collapse of the plurality of structures W2 due to the surface tension of the first organic solvent SL1 and the second organic solvent SL2 can be suppressed.
  • the surface tension of the first organic solvent SL1 is smaller than the surface tension of the rinse liquid LN. Therefore, the collapse of the plurality of structures W2 can be effectively suppressed.
  • the surface tension of the second organic solvent SL2 is smaller than the surface tension of the first organic solvent SL1. Therefore, the collapse of the plurality of structures W2 can be suppressed more effectively.
  • the third embodiment has the same effect as that of the second embodiment.
  • the semiconductor substrate W having the pattern PT including the plurality of structures W2 is processed by the substrate processing method including the steps S21 to S27, and the processed semiconductor substrate W is used.
  • the treatment with the treatment liquid LQ, the cleaning with the rinse liquid LN, and the replacement with the first organic solvent SL1 are set as one step, a plurality of steps may be included before the steps S25 and S26.
  • the second organic solvent nozzle 43 is attached to the arm 171 to which the plasma nozzle 15 is attached, but the supply position of the second organic solvent SL2 is on the substrate W rather than the irradiation position of the atmospheric pressure plasma PM.
  • the second organic solvent nozzle 43 may be driven separately from the plasma nozzle 15 as long as it is radially outward.
  • the second organic solvent nozzle 43 may be provided with a dedicated nozzle moving portion.
  • the substrate processing apparatus 100C according to the fourth embodiment of the present invention will be described with reference to FIG.
  • the fourth embodiment is mainly different from the second embodiment in that the plasma nozzle 15 is arranged inside the blocking plate 411.
  • the points that the fourth embodiment is different from the second embodiment will be mainly described.
  • FIG. 11 is a schematic cross-sectional view showing the substrate processing apparatus 100C according to the fourth embodiment.
  • the substrate processing apparatus 100C has the same configuration as the substrate processing apparatus 100A shown in FIG.
  • the plasma nozzle 15 is arranged inside the blocking plate 411 and the support shaft 413 as compared with the substrate processing apparatus 100A.
  • the blocking plate 411 corresponds to an example of the "opposing member".
  • the same substrate processing method as the substrate processing method shown in FIG. 7 is executed.
  • the scanning process of the substrate W by the plasma nozzle 15 is not executed.
  • the blocking plate 411 covers the upper surface of the substrate W at a close position
  • the plasma nozzle 15 irradiates the surface of the substrate W with atmospheric pressure plasma PM. Therefore, the atmospheric pressure plasma PM is applied to the central CT of the substrate W.
  • the atmospheric pressure plasma PM spreads radially outward from the central CT of the substrate W. That is, since the blocking plate 411 blocks the upper part of the surface of the substrate W, the atmospheric pressure plasma PM spreads radially outward from the central CT of the substrate W.
  • the fourth embodiment has the same effect as that of the second embodiment.
  • the blocking plate 411 may cover the substrate W so as to face the peripheral edge of the substrate W while covering the upper surface of the substrate W at a close position.
  • the first organic solvent nozzle 415 may not be provided. In this case, a substrate processing method similar to the substrate processing method shown in FIG. 5 is executed. However, the scanning process of the substrate W by the plasma nozzle 15 is not executed.
  • the present invention has been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiment, and can be implemented in various aspects without departing from the gist thereof.
  • the plurality of components disclosed in the above embodiment can be appropriately modified. For example, one component of all components shown in one embodiment may be added to another component of another embodiment, or some component of all components shown in one embodiment. The element may be removed from the embodiment.
  • the present invention relates to a substrate processing method, a semiconductor manufacturing method, and a substrate processing apparatus, and has industrial applicability.
  • Treatment liquid nozzle (treatment liquid supply unit) 13 Rinse liquid nozzle (rinse liquid supply unit) 15 Plasma nozzle (plasma irradiation part) 43 Second organic solvent nozzle (second organic solvent supply unit) 411 Blocking plate (opposing member) 415 1st organic solvent nozzle (1st organic solvent supply unit) 100, 100A, 100B, 100C Substrate processing device W Substrate

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162147A (ja) * 1995-12-07 1997-06-20 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2002009037A (ja) * 2000-06-23 2002-01-11 Sony Corp 気体吹き付け式乾燥方法及び装置
JP2005327960A (ja) * 2004-05-17 2005-11-24 Shimada Phys & Chem Ind Co Ltd 被洗浄物乾燥用エアーナイフ
JP2006066501A (ja) * 2004-08-25 2006-03-09 Tokyo Seimitsu Co Ltd スピン洗浄乾燥装置及びスピン洗浄乾燥方法
JP2006303075A (ja) * 2005-04-19 2006-11-02 E Square:Kk 基板等の乾燥方法および乾燥装置
JP2014011426A (ja) * 2012-07-03 2014-01-20 Dainippon Screen Mfg Co Ltd 基板乾燥方法および基板乾燥装置
JP2014523636A (ja) * 2011-05-31 2014-09-11 ラム リサーチ コーポレーション 基板凍結乾燥装置及び方法
JP2019046939A (ja) * 2017-08-31 2019-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162147A (ja) * 1995-12-07 1997-06-20 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2002009037A (ja) * 2000-06-23 2002-01-11 Sony Corp 気体吹き付け式乾燥方法及び装置
JP2005327960A (ja) * 2004-05-17 2005-11-24 Shimada Phys & Chem Ind Co Ltd 被洗浄物乾燥用エアーナイフ
JP2006066501A (ja) * 2004-08-25 2006-03-09 Tokyo Seimitsu Co Ltd スピン洗浄乾燥装置及びスピン洗浄乾燥方法
JP2006303075A (ja) * 2005-04-19 2006-11-02 E Square:Kk 基板等の乾燥方法および乾燥装置
JP2014523636A (ja) * 2011-05-31 2014-09-11 ラム リサーチ コーポレーション 基板凍結乾燥装置及び方法
JP2014011426A (ja) * 2012-07-03 2014-01-20 Dainippon Screen Mfg Co Ltd 基板乾燥方法および基板乾燥装置
JP2019046939A (ja) * 2017-08-31 2019-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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