WO2020199245A1 - 薄膜晶体管阵列基板及显示面板 - Google Patents

薄膜晶体管阵列基板及显示面板 Download PDF

Info

Publication number
WO2020199245A1
WO2020199245A1 PCT/CN2019/082731 CN2019082731W WO2020199245A1 WO 2020199245 A1 WO2020199245 A1 WO 2020199245A1 CN 2019082731 W CN2019082731 W CN 2019082731W WO 2020199245 A1 WO2020199245 A1 WO 2020199245A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent material
thin film
film transistor
transistor array
array substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/082731
Other languages
English (en)
French (fr)
Inventor
闫春秋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Publication of WO2020199245A1 publication Critical patent/WO2020199245A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present invention relates to the field of display technology, in particular to a thin film transistor array substrate and a display panel.
  • the conventional thin film transistor array substrate is provided with a pixel electrode, and the pixel electrode is used to form an electric field with the color filter substrate disposed opposite to the display panel to deflect the liquid crystal molecules.
  • the pixel electrode is generally composed of strip-shaped electrodes, and there is a gap between two adjacent electrodes. Therefore, the surface of the thin film transistor array substrate is in a state of ups and downs.
  • the surface of the thin film transistor is in a state of ups and downs, the light transmittance of the display panel made of the thin film transistor is low.
  • the object of the present invention is to provide a thin film transistor array substrate and a display panel, which can improve the light transmittance of the display panel.
  • a thin film transistor array substrate includes: a display device layer, the display device layer includes at least two pixel electrodes, the pixel electrodes include a main electrode and a branch electrode; and a transparent material layer, the transparent material The layer covers the main electrode and/or the branch electrodes, and fills the gap between two adjacent branch electrodes; the first surface and the second surface of the transparent material layer are coplanar; wherein, the first The surface is the surface where the transparent material layer covers the main electrode and/or the first part of the branch electrode, and the second surface is the first part where the transparent material layer fills the gap between two adjacent branch electrodes.
  • the transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, sulfide One or a combination of more than one of zinc, polyimide, polysiloxane, epoxy resin, polymer graphene.
  • the thickness of the first portion is in the range of 1 nanometer to 100 nanometers.
  • a thin film transistor array substrate includes: a display device layer, the display device layer includes at least two pixel electrodes, the pixel electrodes include a main electrode and a branch electrode; and a transparent material layer, the transparent material The layer covers the main electrode and/or the branch electrodes, and fills the gap between two adjacent branch electrodes.
  • the first surface and the second surface of the transparent material layer are coplanar; wherein, the first surface is the transparent material layer covering the main electrode and/or the branch electrode The surface of the first part, and the second surface is the surface of the second part where the transparent material layer fills the gap between two adjacent branch electrodes.
  • the thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the top surface of the main electrode and/or the branch electrode and The height difference between the bottom surfaces of the gap between two adjacent branch electrodes.
  • the thickness of the first portion is in the range of 1 nanometer to 100 nanometers.
  • the transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, zinc sulfide, polyimide, polyimide One or a combination of one or more of siloxane, epoxy resin, polymer graphene.
  • the transparent material layer is made by coating a liquid transparent material on the pixel electrode layer and applying a vibration force of a predetermined frequency to the display device layer, so that the transparent material Fill the gap between the two branch electrodes under the action of gravity, and cover the branch electrodes and the main electrode, and then solidify the transparent material provided on the pixel electrode layer of the display device layer into a solid state To form.
  • the surface of the insulating layer of the display device layer located between the two adjacent branch electrodes is provided with a first corrugated part, and the first corrugated part falls on the adjacent other.
  • On a first fold portion at least a part of the transparent material layer is embedded in the gap between two adjacent first fold portions.
  • the first corrugated portion is located beside the intersection of the insulating layer and the branch electrode.
  • the first corrugated portion is elongated, and the end edge of the first corrugated portion is provided with a serrated portion.
  • a display panel comprising: a color filter substrate; a liquid crystal layer; and a thin film transistor array substrate; wherein the thin film transistor array substrate includes: a display device layer, the display device layer includes at least two pixel electrodes, so The pixel electrode includes a main electrode and a branch electrode; and a transparent material layer covering the main electrode and/or the branch electrode and filling a gap between two adjacent branch electrodes.
  • the first surface of the transparent material layer and the second surface are coplanar; wherein, the first surface is the first part of the transparent material layer covering the main electrode and/or the branch electrode
  • the second surface is the surface of the second part where the transparent material layer fills the gap between two adjacent branch electrodes.
  • the thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the top surface of the main electrode and/or the branch electrode and the adjacent The height difference between the bottom surfaces of the gap between the two branch electrodes.
  • the thickness of the first portion is in the range of 1 nanometer to 100 nanometers.
  • the transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, zinc sulfide, polyimide, polysilicon oxide.
  • alkane alkane
  • epoxy resin polymer graphene.
  • the transparent material layer is made by coating a liquid transparent material on the pixel electrode layer and applying a vibration force of a predetermined frequency to the display device layer, so that the transparent material is under gravity. Fill the gap between the two branch electrodes, and cover the branch electrodes and the main electrode, and then solidify the transparent material provided on the pixel electrode layer of the display device layer into a solid state to form of.
  • the surface of the insulating layer of the display device layer located between the two adjacent branch electrodes is provided with a first corrugated portion, and the first corrugated portion falls on the adjacent second
  • a fold part at least a part of the transparent material layer is embedded in the gap between two adjacent first fold parts.
  • the first corrugated portion is located beside the intersection of the insulating layer and the branch electrode.
  • the first corrugated portion is elongated, and an end edge of the first corrugated portion is provided with a serrated portion.
  • the thin film transistor array substrate of the present invention is further provided with a transparent material layer, the transparent material layer covers the main electrode and/or the branch electrode, and fills the space between two adjacent branch electrodes. Therefore, the surface of the part corresponding to the pixel electrode in the thin film transistor array substrate can be made flat, thereby helping to increase the light transmittance of the display panel and reduce the light reflection of the display panel rate.
  • FIG. 1 is a schematic diagram of the display panel of the present invention
  • FIG. 2 is a schematic diagram of a thin film transistor array substrate in the display panel shown in FIG. 1;
  • Fig. 3 is a schematic diagram of the A-A' cross section of the thin film transistor array substrate shown in Fig. 2.
  • FIG. 1 is a schematic diagram of the display panel of the present invention
  • FIG. 2 is a schematic diagram of the thin film transistor array substrate 101 in the display panel shown in FIG. 1
  • FIG. 3 is the thin film shown in FIG. A schematic diagram of the AA′ cross section of the transistor array substrate 101.
  • the display panel of the present invention includes a color filter substrate 102, a liquid crystal layer 103, and a thin film transistor array substrate 101.
  • the color filter substrate 102 and the thin film transistor array substrate 101 are superimposed and combined into one body, and the liquid crystal layer 103 is disposed between the color filter substrate 102 and the thin film transistor array substrate 101.
  • a sealant 104 is also provided between the color filter substrate 102 and the thin film transistor array substrate 101.
  • the sealant 104 is located at the edges of the color filter substrate 102 and the thin film transistor array substrate 101.
  • the glue 104 is used to seal the space between the color filter substrate 102 and the thin film transistor array substrate 101 to prevent the liquid crystal molecules in the liquid crystal layer 103 from leaking.
  • the color filter substrate 102 is provided with a common electrode.
  • the thin film transistor array substrate 101 includes a display device layer and a transparent material layer 1013, and the transparent material layer 1013 is disposed on the display device layer.
  • the display device layer includes a substrate 1016, a thin film transistor array device layer 1015, an insulating layer 1014 and a pixel electrode layer.
  • the thin film transistor array device layer 1015 is disposed on the substrate 1016.
  • the thin film transistor array device layer 1015 includes at least two thin film transistors, and at least two thin film transistors are arranged in an array.
  • the insulating layer 1014 is disposed on the thin film transistor array device layer 1015.
  • the pixel electrode layer is disposed on the insulating layer 1014, the pixel electrode layer includes at least two pixel electrodes, a part of the pixel electrode is connected to the thin film transistor through the insulating layer 1014, and the pixel electrode includes The main electrode 1012 and the branch electrode 1011.
  • the transparent material layer 1013 covers the main electrode 1012 and/or the branch electrodes 1011 and fills the gap between two adjacent branch electrodes 1011.
  • the angle between the branch electrode 1011 and the main electrode 1012 is 45 degrees or 135 degrees.
  • the pixel electrode layer faces the common electrode.
  • the common electrode is connected to the common line in the thin film transistor array substrate 101 through a conductive member disposed between the color filter substrate 102 and the thin film transistor array substrate 101.
  • the pixel electrode layer and the common electrode are used to form a voltage difference between the color filter substrate 102 and the thin film transistor array substrate 101 to deflect the liquid crystal molecules in the liquid crystal layer 103.
  • the transparent material layer 1013 is used to planarize the portion of the thin film transistor array substrate 101 corresponding to the pixel electrode, thereby improving the light transmittance of the thin film transistor array substrate 101 at the edge of the pixel electrode.
  • the first surface and the second surface of the transparent material layer 1013 are coplanar, and the first surface is the surface of the transparent material layer 1013 covering the main electrode 1012 and/or the first part of the branch electrode 1011, so The second surface is the surface of the second part of the gap between the two adjacent branch electrodes 1011 that the transparent material layer 1013 fills.
  • coplanar includes: (1) the first surface and the second surface are both planes, and the first surface and the second surface are both in the same plane; (2) the first surface At least one of the surface and the second surface is not a plane.
  • at least one of the first surface and the second surface has a convex part or a concave part, but the first surface And the second surface belong to the same plane as a whole, wherein the area of the convex part and the concave part of the first surface and the second surface occupy the area of the first surface and the second surface.
  • the ratio of the total area of the surface is less than or equal to 30%.
  • Both the first surface and the second surface are parallel to the plane corresponding to the substrate 1016.
  • the thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the difference between the top surface of the main electrode and/or the branch electrode and two adjacent branch electrodes The height difference between the bottom surface of the gap.
  • the thickness of the first part is in the range of 1 nanometer to 100 nanometers. Specifically, the thickness of the first part is 1 nanometer, 5 nanometers, 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 35 nanometers, 40 nanometers, 45 nanometers, 50 nanometers, 55 nanometers, 60 nanometers, 65 nanometers. One of nanometer, 70 nanometer, 75 nanometer, 80 nanometer, 85 nanometer, 90 nanometer, 95 nanometer, and 100 nanometer.
  • the transparent material is one of a transparent organic material, a transparent inorganic material, and a transparent organic-inorganic hybrid material.
  • the transparent organic material may be, for example, organic polymers such as polyimide, polysiloxane, epoxy resin, polymer graphene, and the like.
  • the transparent inorganic material can be, for example, silicon oxide (SiOx), titanium oxide (TiOx), calcium fluoride (CaFx), silicon nitride (SiNx), silicon oxynitride (SiNxOx), magnesium fluoride (MgF2), oxide Aluminum (Al2O3), tantalum oxide (Ta2O5), zinc sulfide (ZnS), etc.
  • the transparent material layer 1013 is made by coating the liquid transparent material on the pixel electrode layer, and applying a vibration force of a predetermined frequency to the display device layer, so that the transparent material is under the action of gravity. Fill the gap between the two branch electrodes, and cover the branch electrodes and the main electrode, and then solidify the transparent material provided on the pixel electrode layer into a solid state, so that the transparent material can be fully filled.
  • the predetermined frequency is in the range of 1 vibration per second to 100 vibrations per second.
  • the transparent material layer 1013 is formed by laminating at least one first sub-material layer and at least one second sub-material layer.
  • the material of the first sub-material layer and the material of the second sub-material layer are the same.
  • the surface of the insulating layer 1014 located between the two adjacent branch electrodes 1011 is provided with a first corrugated portion, and the first corrugated portion falls on another adjacent first corrugated portion At least a part of the transparent material layer 1013 is embedded in the gap between two adjacent first fold portions, the transparent material layer 1013 is provided with a second fold portion, and the second fold portion falls down on the adjacent On the other second corrugated part of, at least a part of the insulating layer 1014 located between two adjacent branch electrodes 1011 is embedded in the gap between two adjacent second corrugated parts.
  • Both the first fold portion and the second fold portion are elongated.
  • the first corrugated portion is located beside the intersection of the insulating layer 1014 and the branch electrode 1011.
  • the second corrugated portion is located in the central area of the gap between the two branch electrodes 1011.
  • the end edges of the first fold portion and/or the second fold portion are provided with serrations.
  • the thin film transistor array substrate is further provided with a transparent material layer
  • the transparent material layer covers the main electrode and/or the branch electrode and fills the gap between two adjacent branch electrodes, Therefore, the surface of the portion corresponding to the pixel electrode in the thin film transistor array substrate can be made flat, which is beneficial to improve the light transmittance of the display panel and is beneficial to reduce the light reflectivity of the display panel.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明公开了一种薄膜晶体管阵列基板及显示面板。所述薄膜晶体管阵列基板包括：显示器件层，所述显示器件层包括至少两像素电极，所述像素电极包括主干电极和分支电极；以及透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙。本发明能提高显示面板的光透过率。

Description

薄膜晶体管阵列基板及显示面板 技术领域
本发明涉及显示技术领域，特别涉及一种薄膜晶体管阵列基板及显示面板。
 背景技术
传统的薄膜晶体管阵列基板中设置有像素电极，该像素电极用于与显示面板中对向设置的彩膜基板形成电场，以使得液晶分子偏转。
该像素电极一般由条状的电极组成，相邻两条状电极之间为间隙。因此，薄膜晶体管阵列基板的表面为高低起伏的状态。
由于薄膜晶体管的表面为高低起伏的状态，因此，由该薄膜晶体管制成的显示面板的光透过率较低。
故，有必要提出一种新的技术方案，以解决上述技术问题。
 技术问题
本发明的目的在于提供一种薄膜晶体管阵列基板及显示面板，其能提高显示面板的光透过率。
 技术解决方案
为解决上述问题，本发明的技术方案如下：
一种薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：显示器件层，所述显示器件层包括至少两像素电极，所述像素电极包括主干电极和分支电极；以及透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙；所述透明材料层的第一表面与第二表面共面；其中，所述第一表面为所述透明材料层覆盖所述主干电极和/或所述分支电极的第一部分的表面，所述第二表面为所述透明材料层填充相邻两所述分支电极之间的间隙的第二部分的表面；所述第二部分的厚度等于所述第一部分的厚度与预定段差之和，其中，所述预定段差为所述主干电极和/或所述分支电极的顶面与相邻两所述分支电极之间的间隙的底面之间的高度差；所述透明材料包括氧化硅、氧化钛、氟化钙、氮化硅、氮氧化硅、氟化镁、氧化铝、氧化钽、硫化锌、聚酰亚胺、聚硅氧烷、环氧树脂、聚合物石墨烯中的一者或一者以上的组合。
在上述薄膜晶体管阵列基板中，所述第一部分的厚度处于1纳米至100纳米的范围内。
一种薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：显示器件层，所述显示器件层包括至少两像素电极，所述像素电极包括主干电极和分支电极；以及透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙。
在上述薄膜晶体管阵列基板中，所述透明材料层的第一表面与第二表面共面；其中，所述第一表面为所述透明材料层覆盖所述主干电极和/或所述分支电极的第一部分的表面，所述第二表面为所述透明材料层填充相邻两所述分支电极之间的间隙的第二部分的表面。
在上述薄膜晶体管阵列基板中，所述第二部分的厚度等于所述第一部分的厚度与预定段差之和，其中，所述预定段差为所述主干电极和/或所述分支电极的顶面与相邻两所述分支电极之间的间隙的底面之间的高度差。
在上述薄膜晶体管阵列基板中，所述第一部分的厚度处于1纳米至100纳米的范围内。
在上述薄膜晶体管阵列基板中，所述透明材料包括氧化硅、氧化钛、氟化钙、氮化硅、氮氧化硅、氟化镁、氧化铝、氧化钽、硫化锌、聚酰亚胺、聚硅氧烷、环氧树脂、聚合物石墨烯中的一者或一者以上的组合。
在上述薄膜晶体管阵列基板中，所述透明材料层是通过在所述像素电极层上涂布液态的透明材料，并对所述显示器件层施加预定频率的震动作用力，以使所述透明材料在重力的作用下填充两所述分支电极之间的间隙，以及覆盖所述分支电极和所述主干电极，然后将设置于所述显示器件层的像素电极层上的所述透明材料固化为固态来形成的。
在上述薄膜晶体管阵列基板中，所述显示器件层的绝缘层中位于相邻两所述分支电极之间的部位的表面设置有第一褶皱部，所述第一褶皱部倒伏在相邻的另一第一褶皱部上，所述透明材料层的至少一部分嵌入至相邻两所述第一褶皱部之间的间隙中。
在上述薄膜晶体管阵列基板中，所述第一褶皱部位于所述绝缘层与所述分支电极的交汇处旁。
在上述薄膜晶体管阵列基板中，所述第一褶皱部为长条状，所述第一褶皱部的末端边缘设置有锯齿部。
一种显示面板，所述显示面板包括：彩膜基板；液晶层；以及薄膜晶体管阵列基板；其中，所述薄膜晶体管阵列基板包括：显示器件层，所述显示器件层包括至少两像素电极，所述像素电极包括主干电极和分支电极；以及透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙。
在上述显示面板中，所述透明材料层的第一表面与第二表面共面；其中，所述第一表面为所述透明材料层覆盖所述主干电极和/或所述分支电极的第一部分的表面，所述第二表面为所述透明材料层填充相邻两所述分支电极之间的间隙的第二部分的表面。
在上述显示面板中，所述第二部分的厚度等于所述第一部分的厚度与预定段差之和，其中，所述预定段差为所述主干电极和/或所述分支电极的顶面与相邻两所述分支电极之间的间隙的底面之间的高度差。
在上述显示面板中，所述第一部分的厚度处于1纳米至100纳米的范围内。
在上述显示面板中，所述透明材料包括氧化硅、氧化钛、氟化钙、氮化硅、氮氧化硅、氟化镁、氧化铝、氧化钽、硫化锌、聚酰亚胺、聚硅氧烷、环氧树脂、聚合物石墨烯中的一者或一者以上的组合。
在上述显示面板中，所述透明材料层是通过在所述像素电极层上涂布液态的透明材料，并对所述显示器件层施加预定频率的震动作用力，以使所述透明材料在重力的作用下填充两所述分支电极之间的间隙，以及覆盖所述分支电极和所述主干电极，然后将设置于所述显示器件层的像素电极层上的所述透明材料固化为固态来形成的。
在上述显示面板中，所述显示器件层的绝缘层中位于相邻两所述分支电极之间的部位的表面设置有第一褶皱部，所述第一褶皱部倒伏在相邻的另一第一褶皱部上，所述透明材料层的至少一部分嵌入至相邻两所述第一褶皱部之间的间隙中。
在上述显示面板中，所述第一褶皱部位于所述绝缘层与所述分支电极的交汇处旁。
在上述显示面板中，所述第一褶皱部为长条状，所述第一褶皱部的末端边缘设置有锯齿部。
 有益效果
相对现有技术，由于本发明的薄膜晶体管阵列基板中还设置有透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙，因此可以使得薄膜晶体管阵列基板中与所述像素电极对应的部分的表面为平坦状，从而有利于提高所述显示面板的光透过率，并有利于降低所述显示面板的光反射率。
 附图说明
图1为本发明的显示面板的示意图；
图2为图1所示的显示面板中的薄膜晶体管阵列基板的示意图；
图3为图2所示的薄膜晶体管阵列基板的A-A’截面的示意图。
 本发明的实施方式
本说明书所使用的词语“实施例”意指实例、示例或例证。此外，本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为“一个或多个”，除非另外指定或从上下文可以清楚确定单数形式。
参考图1、图2和图3，图1为本发明的显示面板的示意图，图2为图1所示的显示面板中的薄膜晶体管阵列基板101的示意图，图3为图2所示的薄膜晶体管阵列基板101的A-A’截面的示意图。
本发明的显示面板包括彩膜基板102、液晶层103、薄膜晶体管阵列基板101。其中，所述彩膜基板102与所述薄膜晶体管阵列基板101叠加组合为一体，所述液晶层103设置于所述彩膜基板102和所述薄膜晶体管阵列基板101之间。所述彩膜基板102与所述薄膜晶体管阵列基板101之间还设置有框胶104，所述框胶104位于所述彩膜基板102、所述薄膜晶体管阵列基板101的边缘处，所述框胶104用于对所述彩膜基板102与所述薄膜晶体管阵列基板101之间的空间进行密封，以防止液晶层103中的液晶分子泄漏。
所述彩膜基板102上设置有共通电极。
所述薄膜晶体管阵列基板101包括显示器件层和透明材料层1013，所述透明材料层1013设置于所述显示器件层上。
其中，所述显示器件层包括基板1016、薄膜晶体管阵列器件层1015、绝缘层1014和像素电极层。
所述薄膜晶体管阵列器件层1015设置于所述基板1016上，所述薄膜晶体管阵列器件层1015包括至少两薄膜晶体管，至少两所述薄膜晶体管以阵列的形式排列。
所述绝缘层1014设置于所述薄膜晶体管阵列器件层1015上。
所述像素电极层设置于所述绝缘层1014上，所述像素电极层包括至少两像素电极，所述像素电极的一部分穿过所述绝缘层1014与所述薄膜晶体管连接，所述像素电极包括主干电极1012和分支电极1011。
所述透明材料层1013覆盖所述主干电极1012和/或所述分支电极1011，并且填充相邻两所述分支电极1011之间的间隙。所述分支电极1011与所述主干电极1012之间的夹角为45度或135度。
所述像素电极层与所述共通电极相向。
所述共通电极通过设置于所述彩膜基板102与所述薄膜晶体管阵列基板101之间的导电构件与所述薄膜晶体管阵列基板101中的公共线导通。所述像素电极层与所述共通电极用于在所述彩膜基板102与所述薄膜晶体管阵列基板101之间形成电压差，以使所述液晶层103中的液晶分子偏转。
所述透明材料层1013用于使得所述薄膜晶体管阵列基板101与所述像素电极对应的部分平坦化，从而提高所述薄膜晶体管阵列基板101在所述像素电极的边缘处的透光率。
所述透明材料层1013的第一表面与第二表面共面，所述第一表面为所述透明材料层1013覆盖所述主干电极1012和/或所述分支电极1011的第一部分的表面，所述第二表面为所述透明材料层1013填充相邻两所述分支电极1011之间的间隙的第二部分的表面。
上述术语“共面”包括：（1）所述第一表面和所述第二表面均为平面，所述第一表面和所述第二表面均处于同一平面中；（2）所述第一表面和所述第二表面中的至少一者不是平面，例如，所述第一表面、所述第二表面中的至少一者存在凸出的部位或凹陷的部位，但是，所述第一表面和所述第二表面在整体上属于同一平面，其中，所述第一表面与所述第二表面中凸出的部分的面积与凹陷的部分的面积占所述第一表面和所述第二表面的总面积之比小于或等于30%。
所述第一表面和所述第二表面均与所述基板1016所对应的平面平行。
所述第二部分的厚度等于所述第一部分的厚度与预定段差之和，其中，所述预定段差为所述主干电极和/或所述分支电极的顶面与相邻两所述分支电极之间的间隙的底面之间的高度差。
所述第一部分的厚度处于1纳米至100纳米的范围内。具体地，所述第一部分的厚度为1纳米、5纳米、10纳米、15纳米、20纳米、25纳米、30纳米、35纳米、40纳米、45纳米、50纳米、55纳米、60纳米、65纳米、70纳米、75纳米、80纳米、85纳米、90纳米、95纳米、100纳米中的一者。
所述透明材料为透明的有机材料、透明的无机材料、透明的有机无机杂化材料中的一者。
所述透明的有机材料可例如为聚酰亚胺、聚硅氧烷、环氧树脂、聚合物石墨烯等有机聚合物等。
所述透明的无机材料可例如为氧化硅（SiOx）、氧化钛（TiOx）、氟化钙（CaFx）、氮化硅（SiNx）、氮氧化硅（SiNxOx）、氟化镁（MgF2）、氧化铝（Al2O3）、氧化钽（Ta2O5）、硫化锌（ZnS）等。
所述透明材料层1013是通过在所述像素电极层上涂布液态的所述透明材料，并对所述显示器件层施加预定频率的震动作用力，以使所述透明材料在重力的作用下填充两分支电极之间的间隙，以及覆盖所述分支电极和主干电极，然后将设置于所述像素电极层上的所述透明材料固化为固态来形成的，这样可以使得所述透明材料充分填充两分支电极之间的间隙，并且避免所述分支电极和所述透明材料接触的部位产生妨碍光线透过的气泡（该气泡通过该震动作用力从液态的所述透明材料中被挤出），并且有利于确保所述第一表面和所述第二表面共面。其中，所述预定频率处于每秒1次震动至每秒100次震动的范围内。
所述透明材料层1013由至少一第一子材料层和至少一第二子材料层层叠而成。所述第一子材料层的材料和所述第二子材料层的材料相同。
作为一种改进，所述绝缘层1014位于相邻两所述分支电极1011之间的部位的表面设置有第一褶皱部，所述第一褶皱部倒伏在相邻的另一第一褶皱部上，所述透明材料层1013的至少一部分嵌入至相邻两所述第一褶皱部之间的间隙中，所述透明材料层1013设置有第二褶皱部，所述第二褶皱部倒伏在相邻的另一第二褶皱部上，所述绝缘层1014位于相邻两所述分支电极1011之间的部位的至少一部分嵌入至相邻两所述第二褶皱部之间的间隙中。
所述第一褶皱部和所述第二褶皱部均为长条状。
所述第一褶皱部位于所述绝缘层1014与所述分支电极1011的交汇处旁。所述第二褶皱部位于两所述分支电极1011之间的间隙的中央区域。
所述第一褶皱部和/或所述第二褶皱部的末端边缘设置有锯齿部。
在本发明中，由于薄膜晶体管阵列基板中还设置有透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙，因此可以使得薄膜晶体管阵列基板中与所述像素电极对应的部分的表面为平坦状，从而有利于提高所述显示面板的光透过率，并有利于降低所述显示面板的光反射率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板包括：
    显示器件层，所述显示器件层包括至少两像素电极，所述像素电极包括主干电极和分支电极；以及
    透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙；
    所述透明材料层的第一表面与第二表面共面；
    其中，所述第一表面为所述透明材料层覆盖所述主干电极和/或所述分支电极的第一部分的表面，所述第二表面为所述透明材料层填充相邻两所述分支电极之间的间隙的第二部分的表面；
    所述第二部分的厚度等于所述第一部分的厚度与预定段差之和，其中，所述预定段差为所述主干电极和/或所述分支电极的顶面与相邻两所述分支电极之间的间隙的底面之间的高度差；
    所述透明材料包括氧化硅、氧化钛、氟化钙、氮化硅、氮氧化硅、氟化镁、氧化铝、氧化钽、硫化锌、聚酰亚胺、聚硅氧烷、环氧树脂、聚合物石墨烯中的一者或一者以上的组合。
  2. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述第一部分的厚度处于1纳米至100纳米的范围内。
  3. 一种薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板包括：
    显示器件层，所述显示器件层包括至少两像素电极，所述像素电极包括主干电极和分支电极；以及
    透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙。
  4. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述透明材料层的第一表面与第二表面共面；
    其中，所述第一表面为所述透明材料层覆盖所述主干电极和/或所述分支电极的第一部分的表面，所述第二表面为所述透明材料层填充相邻两所述分支电极之间的间隙的第二部分的表面。
  5. 根据权利要求4所述的薄膜晶体管阵列基板，其中，所述第二部分的厚度等于所述第一部分的厚度与预定段差之和，其中，所述预定段差为所述主干电极和/或所述分支电极的顶面与相邻两所述分支电极之间的间隙的底面之间的高度差。
  6. 根据权利要求4所述的薄膜晶体管阵列基板，其中，所述第一部分的厚度处于1纳米至100纳米的范围内。
  7. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述透明材料包括氧化硅、氧化钛、氟化钙、氮化硅、氮氧化硅、氟化镁、氧化铝、氧化钽、硫化锌、聚酰亚胺、聚硅氧烷、环氧树脂、聚合物石墨烯中的一者或一者以上的组合。
  8. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述透明材料层是通过在所述像素电极层上涂布液态的透明材料，并对所述显示器件层施加预定频率的震动作用力，以使所述透明材料在重力的作用下填充两所述分支电极之间的间隙，以及覆盖所述分支电极和所述主干电极，然后将设置于所述显示器件层的像素电极层上的所述透明材料固化为固态来形成的。
  9. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述显示器件层的绝缘层中位于相邻两所述分支电极之间的部位的表面设置有第一褶皱部，所述第一褶皱部倒伏在相邻的另一第一褶皱部上，所述透明材料层的至少一部分嵌入至相邻两所述第一褶皱部之间的间隙中。
  10. 根据权利要求9所述的薄膜晶体管阵列基板，其中，所述第一褶皱部位于所述绝缘层与所述分支电极的交汇处旁。
  11. 根据权利要求9所述的薄膜晶体管阵列基板，其中，所述第一褶皱部为长条状，所述第一褶皱部的末端边缘设置有锯齿部。
  12. 一种显示面板，其中，所述显示面板包括：
    彩膜基板；
    液晶层；以及
    薄膜晶体管阵列基板；
    其中，所述薄膜晶体管阵列基板包括：
    显示器件层，所述显示器件层包括至少两像素电极，所述像素电极包括主干电极和分支电极；以及
    透明材料层，所述透明材料层覆盖所述主干电极和/或所述分支电极，并且填充相邻两所述分支电极之间的间隙。
  13. 根据权利要求12所述的显示面板，其中，所述透明材料层的第一表面与第二表面共面；
    其中，所述第一表面为所述透明材料层覆盖所述主干电极和/或所述分支电极的第一部分的表面，所述第二表面为所述透明材料层填充相邻两所述分支电极之间的间隙的第二部分的表面。
  14. 根据权利要求13所述的显示面板，其中，所述第二部分的厚度等于所述第一部分的厚度与预定段差之和，其中，所述预定段差为所述主干电极和/或所述分支电极的顶面与相邻两所述分支电极之间的间隙的底面之间的高度差。
  15. 根据权利要求14所述的显示面板，其中，所述第一部分的厚度处于1纳米至100纳米的范围内。
  16. 根据权利要求15所述的显示面板，其中，所述透明材料包括氧化硅、氧化钛、氟化钙、氮化硅、氮氧化硅、氟化镁、氧化铝、氧化钽、硫化锌、聚酰亚胺、聚硅氧烷、环氧树脂、聚合物石墨烯中的一者或一者以上的组合。
  17. 根据权利要求12所述的显示面板，其中，所述透明材料层是通过在所述像素电极层上涂布液态的透明材料，并对所述显示器件层施加预定频率的震动作用力，以使所述透明材料在重力的作用下填充两所述分支电极之间的间隙，以及覆盖所述分支电极和所述主干电极，然后将设置于所述显示器件层的像素电极层上的所述透明材料固化为固态来形成的。
  18. 根据权利要求12所述的显示面板，其中，所述显示器件层的绝缘层中位于相邻两所述分支电极之间的部位的表面设置有第一褶皱部，所述第一褶皱部倒伏在相邻的另一第一褶皱部上，所述透明材料层的至少一部分嵌入至相邻两所述第一褶皱部之间的间隙中。
  19. 根据权利要求18所述的显示面板，其中，所述第一褶皱部位于所述绝缘层与所述分支电极的交汇处旁。
  20. 根据权利要求18所述的显示面板，其中，所述第一褶皱部为长条状，所述第一褶皱部的末端边缘设置有锯齿部。
PCT/CN2019/082731 2019-04-02 2019-04-15 薄膜晶体管阵列基板及显示面板 Ceased WO2020199245A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910259559.9A CN109901321B (zh) 2019-04-02 2019-04-02 薄膜晶体管阵列基板及显示面板
CN201910259559.9 2019-04-02

Publications (1)

Publication Number Publication Date
WO2020199245A1 true WO2020199245A1 (zh) 2020-10-08

Family

ID=66955170

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/082731 Ceased WO2020199245A1 (zh) 2019-04-02 2019-04-15 薄膜晶体管阵列基板及显示面板

Country Status (2)

Country Link
CN (1) CN109901321B (zh)
WO (1) WO2020199245A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859044A (zh) * 2009-04-09 2010-10-13 三星电子株式会社 具有提高的显示质量的显示装置
CN104267548A (zh) * 2014-07-18 2015-01-07 友达光电股份有限公司 显示面板的像素结构
CN104914635A (zh) * 2015-06-25 2015-09-16 深圳市华星光电技术有限公司 像素电极及液晶显示面板

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3086682B2 (ja) * 1993-07-22 2000-09-11 株式会社半導体エネルギー研究所 液晶電気光学装置
JP4145729B2 (ja) * 2003-06-13 2008-09-03 セイコーエプソン株式会社 液晶装置の製造方法
JP4123208B2 (ja) * 2004-09-03 2008-07-23 セイコーエプソン株式会社 液晶表示装置、電子機器
JP5107070B2 (ja) * 2008-01-28 2012-12-26 株式会社ジャパンディスプレイウェスト 表示装置
CN101494271A (zh) * 2009-02-20 2009-07-29 隆达电子股份有限公司 发光二极管装置的制造方法及喷涂设备
CN201984265U (zh) * 2011-01-14 2011-09-21 京东方科技集团股份有限公司 阵列基板和液晶显示器
CN102323696B (zh) * 2011-07-20 2014-10-22 深圳市华星光电技术有限公司 液晶涂布装置和方法
CN102778817A (zh) * 2012-08-14 2012-11-14 四川虹视显示技术有限公司 光刻胶的脱泡方法及设备
US20140152922A1 (en) * 2012-12-05 2014-06-05 Samsung Display Co., Ltd. Liquid crystal display and method of manufacturing the same
KR20140127641A (ko) * 2013-04-25 2014-11-04 삼성디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
CN103454811B (zh) * 2013-09-12 2016-09-07 京东方科技集团股份有限公司 液晶取向层的制作装置及方法
CN103521395B (zh) * 2013-10-28 2016-02-03 合肥京东方光电科技有限公司 一种涂覆装置
CN108287637B (zh) * 2014-05-16 2021-12-14 群创光电股份有限公司 触控显示面板
CN104267550A (zh) * 2014-10-14 2015-01-07 京东方科技集团股份有限公司 一种阵列基板、显示面板、显示装置
KR20160113379A (ko) * 2015-03-18 2016-09-29 삼성디스플레이 주식회사 곡면 표시 장치
CN104777693B (zh) * 2015-04-28 2017-05-03 深圳市华星光电技术有限公司 高穿透率psva型液晶显示面板及其制作方法
CN105161542A (zh) * 2015-08-06 2015-12-16 深圳市华星光电技术有限公司 薄膜晶体管阵列基板及其制备方法、液晶面板
KR102484230B1 (ko) * 2015-12-22 2023-01-03 삼성디스플레이 주식회사 액정 표시 장치
US10141544B2 (en) * 2016-08-10 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Electroluminescent display device and manufacturing method thereof
TW201830102A (zh) * 2016-12-14 2018-08-16 美商3M新設資產公司 分段保護顯示膜
CN106877732B (zh) * 2017-03-17 2019-07-19 中国科学院半导体研究所 基于褶皱导电薄膜的摩擦发电机及制备方法、集成结构
CN108490653B (zh) * 2018-03-27 2021-06-01 武汉华星光电技术有限公司 用于使基板膜层均匀化的设备以及在基板涂布膜层的方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859044A (zh) * 2009-04-09 2010-10-13 三星电子株式会社 具有提高的显示质量的显示装置
CN104267548A (zh) * 2014-07-18 2015-01-07 友达光电股份有限公司 显示面板的像素结构
CN104914635A (zh) * 2015-06-25 2015-09-16 深圳市华星光电技术有限公司 像素电极及液晶显示面板

Also Published As

Publication number Publication date
CN109901321A (zh) 2019-06-18
CN109901321B (zh) 2021-05-07

Similar Documents

Publication Publication Date Title
US10818702B2 (en) Array substrates and display screens
JP6491825B2 (ja) 液晶表示装置
US9093610B2 (en) Display apparatus and method of manufacturing the same
KR20140030999A (ko) 표시 장치 및 그 제조 방법
JP2017191317A5 (zh)
WO2013135186A1 (zh) 液晶显示器基板、液晶显示面板以及液晶显示器
US20190384124A1 (en) Pixel structure and lcd panel
CN105717719A (zh) 边缘场切换模式液晶显示装置
WO2016119335A1 (zh) 显示面板、显示装置及显示面板的制作方法
TW201142453A (en) Electro-phoretic display and pixel thereof
CN105143971B (zh) 光学装置和具有它的显示装置
CN103809339B (zh) 液晶显示装置
CN107316876B (zh) 像素阵列基板
WO2020199245A1 (zh) 薄膜晶体管阵列基板及显示面板
KR20090116856A (ko) 프린지 인플레인 필드 스위칭 액정표시소자
US7492429B2 (en) In-plane switching liquid crystal display with bent electrodes
CN1754120A (zh) 液晶显示器
KR102082264B1 (ko) 고 개구율을 갖는 수평 전계 방식 표시장치용 박막 트랜지스터 기판 및 그 제조 방법
TW202141149A (zh) 電子紙封裝結構
KR960042183A (ko) 강유전상 및/또는 반강유전상을 가진 액정을 이용한 액정표시소자
RU2012105286A (ru) Жидкокристаллическое индикаторное устройство
CN102722055A (zh) 阵列基板及液晶显示装置
US10678100B2 (en) Liquid crystal display device
US8432605B2 (en) Electrophoretic indication display device
CN105700250A (zh) 液晶显示装置和显示设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19923150

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19923150

Country of ref document: EP

Kind code of ref document: A1