WO2020199245A1

WO2020199245A1 - Thin film transistor array substrate and display panel

Info

Publication number: WO2020199245A1
Application number: PCT/CN2019/082731
Authority: WO
Inventors: 闫春秋
Original assignee: 深圳市华星光电技术有限公司
Priority date: 2019-04-02
Filing date: 2019-04-15
Publication date: 2020-10-08
Also published as: CN109901321B; CN109901321A

Abstract

Disclosed are a thin film transistor array substrate and a display panel. The thin film transistor array substrate comprises: a display device layer, wherein the display device layer comprises at least two pixel electrodes, and each of the pixel electrodes comprise a trunk electrode and a branch electrode; and a transparent material layer, wherein the transparent material layer covers the trunk electrode and/or the branch electrode, and fills a gap between two adjacent branch electrodes. The present invention can improve the light transmittance of a display panel.

Description

Thin film transistor array substrate and display panel

Technical field

The present invention relates to the field of display technology, in particular to a thin film transistor array substrate and a display panel.

Background technique

The conventional thin film transistor array substrate is provided with a pixel electrode, and the pixel electrode is used to form an electric field with the color filter substrate disposed opposite to the display panel to deflect the liquid crystal molecules.

The pixel electrode is generally composed of strip-shaped electrodes, and there is a gap between two adjacent electrodes. Therefore, the surface of the thin film transistor array substrate is in a state of ups and downs.

Since the surface of the thin film transistor is in a state of ups and downs, the light transmittance of the display panel made of the thin film transistor is low.

Therefore, it is necessary to propose a new technical solution to solve the above technical problems.

technical problem

The object of the present invention is to provide a thin film transistor array substrate and a display panel, which can improve the light transmittance of the display panel.

Technical solutions

To solve the above problems, the technical solution of the present invention is as follows:

A thin film transistor array substrate, the thin film transistor array substrate includes: a display device layer, the display device layer includes at least two pixel electrodes, the pixel electrodes include a main electrode and a branch electrode; and a transparent material layer, the transparent material The layer covers the main electrode and/or the branch electrodes, and fills the gap between two adjacent branch electrodes; the first surface and the second surface of the transparent material layer are coplanar; wherein, the first The surface is the surface where the transparent material layer covers the main electrode and/or the first part of the branch electrode, and the second surface is the first part where the transparent material layer fills the gap between two adjacent branch electrodes. The surface of two parts; the thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the top surface of the main electrode and/or the branch electrode and the adjacent two The height difference between the bottom surfaces of the gap between the branch electrodes; the transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, sulfide One or a combination of more than one of zinc, polyimide, polysiloxane, epoxy resin, polymer graphene.

In the above thin film transistor array substrate, the thickness of the first portion is in the range of 1 nanometer to 100 nanometers.

A thin film transistor array substrate, the thin film transistor array substrate includes: a display device layer, the display device layer includes at least two pixel electrodes, the pixel electrodes include a main electrode and a branch electrode; and a transparent material layer, the transparent material The layer covers the main electrode and/or the branch electrodes, and fills the gap between two adjacent branch electrodes.

In the above-mentioned thin film transistor array substrate, the first surface and the second surface of the transparent material layer are coplanar; wherein, the first surface is the transparent material layer covering the main electrode and/or the branch electrode The surface of the first part, and the second surface is the surface of the second part where the transparent material layer fills the gap between two adjacent branch electrodes.

In the above thin film transistor array substrate, the thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the top surface of the main electrode and/or the branch electrode and The height difference between the bottom surfaces of the gap between two adjacent branch electrodes.

In the above thin film transistor array substrate, the transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, zinc sulfide, polyimide, polyimide One or a combination of one or more of siloxane, epoxy resin, polymer graphene.

In the above-mentioned thin film transistor array substrate, the transparent material layer is made by coating a liquid transparent material on the pixel electrode layer and applying a vibration force of a predetermined frequency to the display device layer, so that the transparent material Fill the gap between the two branch electrodes under the action of gravity, and cover the branch electrodes and the main electrode, and then solidify the transparent material provided on the pixel electrode layer of the display device layer into a solid state To form.

In the above-mentioned thin film transistor array substrate, the surface of the insulating layer of the display device layer located between the two adjacent branch electrodes is provided with a first corrugated part, and the first corrugated part falls on the adjacent other. On a first fold portion, at least a part of the transparent material layer is embedded in the gap between two adjacent first fold portions.

In the above thin film transistor array substrate, the first corrugated portion is located beside the intersection of the insulating layer and the branch electrode.

In the above-mentioned thin film transistor array substrate, the first corrugated portion is elongated, and the end edge of the first corrugated portion is provided with a serrated portion.

A display panel, the display panel comprising: a color filter substrate; a liquid crystal layer; and a thin film transistor array substrate; wherein the thin film transistor array substrate includes: a display device layer, the display device layer includes at least two pixel electrodes, so The pixel electrode includes a main electrode and a branch electrode; and a transparent material layer covering the main electrode and/or the branch electrode and filling a gap between two adjacent branch electrodes.

In the above display panel, the first surface of the transparent material layer and the second surface are coplanar; wherein, the first surface is the first part of the transparent material layer covering the main electrode and/or the branch electrode The second surface is the surface of the second part where the transparent material layer fills the gap between two adjacent branch electrodes.

In the above display panel, the thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the top surface of the main electrode and/or the branch electrode and the adjacent The height difference between the bottom surfaces of the gap between the two branch electrodes.

In the above display panel, the thickness of the first portion is in the range of 1 nanometer to 100 nanometers.

In the above display panel, the transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, zinc sulfide, polyimide, polysilicon oxide. One or a combination of one or more of alkane, epoxy resin, polymer graphene.

In the above-mentioned display panel, the transparent material layer is made by coating a liquid transparent material on the pixel electrode layer and applying a vibration force of a predetermined frequency to the display device layer, so that the transparent material is under gravity. Fill the gap between the two branch electrodes, and cover the branch electrodes and the main electrode, and then solidify the transparent material provided on the pixel electrode layer of the display device layer into a solid state to form of.

In the above display panel, the surface of the insulating layer of the display device layer located between the two adjacent branch electrodes is provided with a first corrugated portion, and the first corrugated portion falls on the adjacent second On a fold part, at least a part of the transparent material layer is embedded in the gap between two adjacent first fold parts.

In the above display panel, the first corrugated portion is located beside the intersection of the insulating layer and the branch electrode.

In the above display panel, the first corrugated portion is elongated, and an end edge of the first corrugated portion is provided with a serrated portion.

Beneficial effect

Compared with the prior art, since the thin film transistor array substrate of the present invention is further provided with a transparent material layer, the transparent material layer covers the main electrode and/or the branch electrode, and fills the space between two adjacent branch electrodes. Therefore, the surface of the part corresponding to the pixel electrode in the thin film transistor array substrate can be made flat, thereby helping to increase the light transmittance of the display panel and reduce the light reflection of the display panel rate.

Description of the drawings

FIG. 1 is a schematic diagram of the display panel of the present invention;

FIG. 2 is a schematic diagram of a thin film transistor array substrate in the display panel shown in FIG. 1;

Fig. 3 is a schematic diagram of the A-A' cross section of the thin film transistor array substrate shown in Fig. 2.

Embodiments of the invention

The word "embodiment" used in this specification means an example, example, or illustration. In addition, the article "a" used in this specification and appended claims can generally be construed as "one or more" unless otherwise specified or the singular form can be clearly determined from the context.

1, 2 and 3, FIG. 1 is a schematic diagram of the display panel of the present invention, FIG. 2 is a schematic diagram of the thin film transistor array substrate 101 in the display panel shown in FIG. 1, and FIG. 3 is the thin film shown in FIG. A schematic diagram of the AA′ cross section of the transistor array substrate 101.

The display panel of the present invention includes a color filter substrate 102, a liquid crystal layer 103, and a thin film transistor array substrate 101. Wherein, the color filter substrate 102 and the thin film transistor array substrate 101 are superimposed and combined into one body, and the liquid crystal layer 103 is disposed between the color filter substrate 102 and the thin film transistor array substrate 101. A sealant 104 is also provided between the color filter substrate 102 and the thin film transistor array substrate 101. The sealant 104 is located at the edges of the color filter substrate 102 and the thin film transistor array substrate 101. The glue 104 is used to seal the space between the color filter substrate 102 and the thin film transistor array substrate 101 to prevent the liquid crystal molecules in the liquid crystal layer 103 from leaking.

The color filter substrate 102 is provided with a common electrode.

The thin film transistor array substrate 101 includes a display device layer and a transparent material layer 1013, and the transparent material layer 1013 is disposed on the display device layer.

Wherein, the display device layer includes a substrate 1016, a thin film transistor array device layer 1015, an insulating layer 1014 and a pixel electrode layer.

The thin film transistor array device layer 1015 is disposed on the substrate 1016. The thin film transistor array device layer 1015 includes at least two thin film transistors, and at least two thin film transistors are arranged in an array.

The insulating layer 1014 is disposed on the thin film transistor array device layer 1015.

The pixel electrode layer is disposed on the insulating layer 1014, the pixel electrode layer includes at least two pixel electrodes, a part of the pixel electrode is connected to the thin film transistor through the insulating layer 1014, and the pixel electrode includes The main electrode 1012 and the branch electrode 1011.

The transparent material layer 1013 covers the main electrode 1012 and/or the branch electrodes 1011 and fills the gap between two adjacent branch electrodes 1011. The angle between the branch electrode 1011 and the main electrode 1012 is 45 degrees or 135 degrees.

The pixel electrode layer faces the common electrode.

The common electrode is connected to the common line in the thin film transistor array substrate 101 through a conductive member disposed between the color filter substrate 102 and the thin film transistor array substrate 101. The pixel electrode layer and the common electrode are used to form a voltage difference between the color filter substrate 102 and the thin film transistor array substrate 101 to deflect the liquid crystal molecules in the liquid crystal layer 103.

The transparent material layer 1013 is used to planarize the portion of the thin film transistor array substrate 101 corresponding to the pixel electrode, thereby improving the light transmittance of the thin film transistor array substrate 101 at the edge of the pixel electrode.

The first surface and the second surface of the transparent material layer 1013 are coplanar, and the first surface is the surface of the transparent material layer 1013 covering the main electrode 1012 and/or the first part of the branch electrode 1011, so The second surface is the surface of the second part of the gap between the two adjacent branch electrodes 1011 that the transparent material layer 1013 fills.

The above term "coplanar" includes: (1) the first surface and the second surface are both planes, and the first surface and the second surface are both in the same plane; (2) the first surface At least one of the surface and the second surface is not a plane. For example, at least one of the first surface and the second surface has a convex part or a concave part, but the first surface And the second surface belong to the same plane as a whole, wherein the area of the convex part and the concave part of the first surface and the second surface occupy the area of the first surface and the second surface. The ratio of the total area of the surface is less than or equal to 30%.

Both the first surface and the second surface are parallel to the plane corresponding to the substrate 1016.

The thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the difference between the top surface of the main electrode and/or the branch electrode and two adjacent branch electrodes The height difference between the bottom surface of the gap.

The thickness of the first part is in the range of 1 nanometer to 100 nanometers. Specifically, the thickness of the first part is 1 nanometer, 5 nanometers, 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 35 nanometers, 40 nanometers, 45 nanometers, 50 nanometers, 55 nanometers, 60 nanometers, 65 nanometers. One of nanometer, 70 nanometer, 75 nanometer, 80 nanometer, 85 nanometer, 90 nanometer, 95 nanometer, and 100 nanometer.

The transparent material is one of a transparent organic material, a transparent inorganic material, and a transparent organic-inorganic hybrid material.

The transparent organic material may be, for example, organic polymers such as polyimide, polysiloxane, epoxy resin, polymer graphene, and the like.

The transparent inorganic material can be, for example, silicon oxide (SiOx), titanium oxide (TiOx), calcium fluoride (CaFx), silicon nitride (SiNx), silicon oxynitride (SiNxOx), magnesium fluoride (MgF2), oxide Aluminum (Al2O3), tantalum oxide (Ta2O5), zinc sulfide (ZnS), etc.

The transparent material layer 1013 is made by coating the liquid transparent material on the pixel electrode layer, and applying a vibration force of a predetermined frequency to the display device layer, so that the transparent material is under the action of gravity. Fill the gap between the two branch electrodes, and cover the branch electrodes and the main electrode, and then solidify the transparent material provided on the pixel electrode layer into a solid state, so that the transparent material can be fully filled The gap between the two branch electrodes, and to prevent the contact between the branch electrode and the transparent material from generating bubbles that hinder the transmission of light (the bubbles are squeezed out of the liquid transparent material by the vibration force), And it helps to ensure that the first surface and the second surface are coplanar. Wherein, the predetermined frequency is in the range of 1 vibration per second to 100 vibrations per second.

The transparent material layer 1013 is formed by laminating at least one first sub-material layer and at least one second sub-material layer. The material of the first sub-material layer and the material of the second sub-material layer are the same.

As an improvement, the surface of the insulating layer 1014 located between the two adjacent branch electrodes 1011 is provided with a first corrugated portion, and the first corrugated portion falls on another adjacent first corrugated portion At least a part of the transparent material layer 1013 is embedded in the gap between two adjacent first fold portions, the transparent material layer 1013 is provided with a second fold portion, and the second fold portion falls down on the adjacent On the other second corrugated part of, at least a part of the insulating layer 1014 located between two adjacent branch electrodes 1011 is embedded in the gap between two adjacent second corrugated parts.

Both the first fold portion and the second fold portion are elongated.

The first corrugated portion is located beside the intersection of the insulating layer 1014 and the branch electrode 1011. The second corrugated portion is located in the central area of the gap between the two branch electrodes 1011.

The end edges of the first fold portion and/or the second fold portion are provided with serrations.

In the present invention, since the thin film transistor array substrate is further provided with a transparent material layer, the transparent material layer covers the main electrode and/or the branch electrode and fills the gap between two adjacent branch electrodes, Therefore, the surface of the portion corresponding to the pixel electrode in the thin film transistor array substrate can be made flat, which is beneficial to improve the light transmittance of the display panel and is beneficial to reduce the light reflectivity of the display panel.

In summary, although the present invention has been disclosed as above in preferred embodiments, the above-mentioned preferred embodiments are not intended to limit the present invention. Those of ordinary skill in the art can make various modifications without departing from the spirit and scope of the present invention. Such changes and modifications, therefore, the protection scope of the present invention is subject to the scope defined by the claims.

Claims

A thin film transistor array substrate, wherein the thin film transistor array substrate includes:

A display device layer, the display device layer includes at least two pixel electrodes, and the pixel electrodes include a main electrode and a branch electrode; and

A transparent material layer, which covers the main electrode and/or the branch electrodes and fills the gap between two adjacent branch electrodes;

The first surface and the second surface of the transparent material layer are coplanar;

Wherein, the first surface is the surface of the transparent material layer covering the main electrode and/or the first part of the branch electrode, and the second surface is the transparent material layer filling the adjacent two branch electrodes The surface of the second part of the gap between;

The thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the difference between the top surface of the main electrode and/or the branch electrode and two adjacent branch electrodes The height difference between the bottom surface of the gap;

The transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, zinc sulfide, polyimide, polysiloxane, epoxy resin, One or a combination of more than one polymer graphene.
The thin film transistor array substrate according to claim 1, wherein the thickness of the first portion is in the range of 1 nanometer to 100 nanometers.
A thin film transistor array substrate, wherein the thin film transistor array substrate includes:

A display device layer, the display device layer includes at least two pixel electrodes, and the pixel electrodes include a main electrode and a branch electrode; and

The transparent material layer covers the main electrode and/or the branch electrodes, and fills the gap between two adjacent branch electrodes.
4. The thin film transistor array substrate of claim 3, wherein the first surface and the second surface of the transparent material layer are coplanar;

Wherein, the first surface is the surface of the transparent material layer covering the main electrode and/or the first part of the branch electrode, and the second surface is the transparent material layer filling the adjacent two branch electrodes The gap between the surface of the second part.
4. The thin film transistor array substrate of claim 4, wherein the thickness of the second part is equal to the sum of the thickness of the first part and a predetermined level difference, wherein the predetermined level difference is the main electrode and/or the The height difference between the top surface of the branch electrode and the bottom surface of the gap between two adjacent branch electrodes.
4. The thin film transistor array substrate of claim 4, wherein the thickness of the first portion is in the range of 1 nanometer to 100 nanometers.
The thin film transistor array substrate of claim 3, wherein the transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, zinc sulfide, One or a combination of one or more of polyimide, polysiloxane, epoxy resin, and polymer graphene.
3. The thin film transistor array substrate of claim 3, wherein the transparent material layer is obtained by coating a liquid transparent material on the pixel electrode layer and applying a vibration force of a predetermined frequency to the display device layer, So that the transparent material fills the gap between the two branch electrodes under the action of gravity, and covers the branch electrodes and the main electrode, and then places all the parts on the pixel electrode layer of the display device layer. The transparent material is formed by curing into a solid state.
3. The thin film transistor array substrate according to claim 3, wherein the surface of the portion located between the two adjacent branch electrodes in the insulating layer of the display device layer is provided with a first corrugated portion, and the first corrugated portion It falls on another adjacent first fold portion, and at least a part of the transparent material layer is embedded in a gap between two adjacent first fold portions.
9. The thin film transistor array substrate of claim 9, wherein the first corrugated portion is located beside the intersection of the insulating layer and the branch electrode.
9. The thin film transistor array substrate according to claim 9, wherein the first corrugated portion is elongated, and an end edge of the first corrugated portion is provided with a serrated portion.
A display panel, wherein the display panel includes:

Color film substrate;

Liquid crystal layer; and

Thin film transistor array substrate;

Wherein, the thin film transistor array substrate includes:

A display device layer, the display device layer includes at least two pixel electrodes, and the pixel electrodes include a main electrode and a branch electrode; and

The transparent material layer covers the main electrode and/or the branch electrodes, and fills the gap between two adjacent branch electrodes.
13. The display panel of claim 12, wherein the first surface and the second surface of the transparent material layer are coplanar;

Wherein, the first surface is the surface of the transparent material layer covering the main electrode and/or the first part of the branch electrode, and the second surface is the transparent material layer filling the adjacent two branch electrodes The gap between the surface of the second part.
13. The display panel according to claim 13, wherein the thickness of the second portion is equal to the sum of the thickness of the first portion and a predetermined level difference, wherein the predetermined level difference is the main electrode and/or the branch electrode The height difference between the top surface of and the bottom surface of the gap between two adjacent branch electrodes.
The display panel according to claim 14, wherein the thickness of the first portion is in the range of 1 nanometer to 100 nanometers.
The display panel according to claim 15, wherein the transparent material includes silicon oxide, titanium oxide, calcium fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminum oxide, tantalum oxide, zinc sulfide, polyamide One or a combination of one or more of imine, polysiloxane, epoxy resin, and polymer graphene.
The display panel according to claim 12, wherein the transparent material layer is formed by coating a liquid transparent material on the pixel electrode layer, and applying a vibration force of a predetermined frequency to the display device layer to make The transparent material fills the gap between the two branch electrodes under the action of gravity, and covers the branch electrodes and the main electrode, and then the transparent material disposed on the pixel electrode layer of the display device layer The material is formed by curing into a solid state.
11. The display panel according to claim 12, wherein the surface of the portion of the insulating layer of the display device layer located between the two adjacent branch electrodes is provided with a first corrugated portion, and the first corrugated portion falls on the surface On another adjacent first fold portion, at least a part of the transparent material layer is embedded in the gap between two adjacent first fold portions.
18. The display panel of claim 18, wherein the first corrugated portion is located beside the intersection of the insulating layer and the branch electrode.
18. The display panel according to claim 18, wherein the first corrugated portion is elongated, and the end edge of the first corrugated portion is provided with a serrated portion.