CN109901321A - Thin-film transistor array base-plate and display panel - Google Patents
Thin-film transistor array base-plate and display panel Download PDFInfo
- Publication number
- CN109901321A CN109901321A CN201910259559.9A CN201910259559A CN109901321A CN 109901321 A CN109901321 A CN 109901321A CN 201910259559 A CN201910259559 A CN 201910259559A CN 109901321 A CN109901321 A CN 109901321A
- Authority
- CN
- China
- Prior art keywords
- transparent material
- film transistor
- thin
- transistor array
- array base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Abstract
The invention discloses a kind of thin-film transistor array base-plate and display panels.The thin-film transistor array base-plate includes: display device layer, and the display device layer includes at least two pixel electrodes, and the pixel electrode includes main electrode and branch electrodes；And transparent material layer, the transparent material layer covers the main electrode and/or the branch electrodes, and fills the gap between adjacent two branch electrodes.The present invention can improve the light transmission rate of display panel.
Description
[technical field]
The present invention relates to field of display technology, in particular to a kind of thin-film transistor array base-plate and display panel.
[background technique]
Be provided with pixel electrode in traditional thin-film transistor array base-plate, the pixel electrode be used for it is right in display panel
Electric field is formed to the color membrane substrates of setting, so that liquid crystal molecule deflects.
The pixel electrode is generally made of the electrode of strip, is gap between adjacent two strip shaped electric poles.Therefore, film crystal
The surface of pipe array substrate is the state that height rises and falls.
Since the surface of thin film transistor (TFT) is the state that height rises and falls, the display surface made of the thin film transistor (TFT)
The light transmission rate of plate is lower.
Therefore, it is necessary to propose a kind of new technical solution, to solve the above technical problems.
[summary of the invention]
The purpose of the present invention is to provide a kind of thin-film transistor array base-plate and display panels, can improve display panel
Light transmission rate.
To solve the above problems, technical scheme is as follows:
A kind of thin-film transistor array base-plate, the thin-film transistor array base-plate include: display device layer, the display
Device layer includes at least two pixel electrodes, and the pixel electrode includes main electrode and branch electrodes；And transparent material layer, institute
It states transparent material layer and covers the main electrode and/or the branch electrodes, and fill between adjacent two branch electrodes
Gap.
In above-mentioned thin-film transistor array base-plate, the first surface of the transparent material layer is coplanar with second surface；Its
In, the first surface is the first part that the transparent material layer covers the main electrode and/or the branch electrodes
Surface, the second surface are the second part that the transparent material layer fills the gap between adjacent two branch electrodes
Surface.
In above-mentioned thin-film transistor array base-plate, the thickness of the second part be equal to the thickness of the first part with
The sum of predetermined segment difference, wherein the predetermined segment difference is the top surface of the main electrode and/or the branch electrodes and adjacent two institute
State the difference in height between the bottom surface in the gap between branch electrodes.
In above-mentioned thin-film transistor array base-plate, the thickness of the first part is in 1 nanometer to 100 nanometers of range
It is interior.
In above-mentioned thin-film transistor array base-plate, the transparent material includes silica, titanium oxide, calcirm-fluoride, nitridation
Silicon, silicon oxynitride, magnesium fluoride, aluminium oxide, tantalum oxide, zinc sulphide, polyimides, polysiloxanes, epoxy resin, polymer graphite
One of alkene or one or more of combination.
A kind of display panel, the display panel include: color membrane substrates；Liquid crystal layer；And thin-film transistor array base-plate；
Wherein, the thin-film transistor array base-plate includes: display device layer, and the display device layer includes at least two pixel electrodes,
The pixel electrode includes main electrode and branch electrodes；And transparent material layer, the transparent material layer cover the trunk
Electrode and/or the branch electrodes, and fill the gap between adjacent two branch electrodes.
In the above display panel, the first surface of the transparent material layer is coplanar with second surface；Wherein, described first
Surface is the surface for the first part that the transparent material layer covers the main electrode and/or the branch electrodes, described the
Two surfaces are the surface for the second part that the transparent material layer fills the gap between adjacent two branch electrodes.
In the above display panel, the thickness of the second part be equal to the first part thickness and predetermined segment difference it
With, wherein the predetermined segment difference is the top surface of the main electrode and/or the branch electrodes and adjacent two branch electrodes
Between gap bottom surface between difference in height.
In the above display panel, the thickness of the first part is in the range of 1 nanometer to 100 nanometers.
In the above display panel, the transparent material includes silica, titanium oxide, calcirm-fluoride, silicon nitride, nitrogen oxidation
Silicon, magnesium fluoride, aluminium oxide, tantalum oxide, zinc sulphide, polyimides, polysiloxanes, epoxy resin, one in polymer graphite alkene
Person or one or more of combination.
Compared with the prior art, described due to being additionally provided with transparent material layer in thin-film transistor array base-plate of the invention
Transparent material layer covers the main electrode and/or the branch electrodes, and fills between adjacent two branch electrodes
Gap, therefore the surface of part corresponding with the pixel electrode in thin-film transistor array base-plate can be made to be flat condition,
To be conducive to improve the light transmission rate of the display panel, and advantageously reduce the light reflectivity of the display panel.
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate institute's accompanying drawings, makees
Detailed description are as follows.
[Detailed description of the invention]
Fig. 1 is the schematic diagram of display panel of the invention；
Fig. 2 is the schematic diagram of the thin-film transistor array base-plate in display panel shown in FIG. 1；
Fig. 3 is the schematic diagram in the section A-A ' of thin-film transistor array base-plate shown in Fig. 2.
[specific embodiment]
The word " embodiment " used in this specification means example, example or illustration.In addition, this specification and appended power
Benefit require used in the article " one " can generally be interpreted " one or more ", unless specified otherwise or from context
It can understand and determine singular.
With reference to Fig. 1, Fig. 2 and Fig. 3, Fig. 1 is the schematic diagram of display panel of the invention, and Fig. 2 is display panel shown in FIG. 1
In thin-film transistor array base-plate 101 schematic diagram, Fig. 3 be thin-film transistor array base-plate 101 shown in Fig. 2 A-A ' cut
The schematic diagram in face.
Display panel of the invention includes color membrane substrates 102, liquid crystal layer 103, thin-film transistor array base-plate 101.Wherein,
The color membrane substrates 102 are integrated with 101 stack combinations of thin-film transistor array base-plate, and the liquid crystal layer 103 is set to
Between the color membrane substrates 102 and the thin-film transistor array base-plate 101.The color membrane substrates 102 and the film crystal
Frame glue 104 is additionally provided between pipe array substrate 101, the frame glue 104 is located at the color membrane substrates 102, the film crystal
The edge of pipe array substrate 101, the frame glue 104 are used for the color membrane substrates 102 and the thin film transistor (TFT) array base
Space between plate 101 is sealed, to prevent the liquid crystal molecule in liquid crystal layer 103 from leaking.
Common electrode is provided on the color membrane substrates 102.
The thin-film transistor array base-plate 101 includes display device layer and transparent material layer 1013, the transparent material
Layer 1013 is set on the display device layer.
Wherein, the display device layer includes substrate 1016, thin film transistor array devices layer 1015,1014 and of insulating layer
Pixel electrode layer.
The thin film transistor array devices layer 1015 is set on the substrate 1016, the thin film transistor (TFT) array device
Part layer 1015 includes at least two thin film transistor (TFT)s, and at least two thin film transistor (TFT)s arrange in an array manner.
The insulating layer 1014 is set on the thin film transistor array devices layer 1015.
The pixel electrode layer is set on the insulating layer 1014, and the pixel electrode layer includes at least two pixels electricity
Pole, a part of the pixel electrode pass through the insulating layer 1014 and connect with the thin film transistor (TFT), the pixel electrode packet
Include main electrode 1012 and branch electrodes 1011.
The transparent material layer 1013 covers the main electrode 1012 and/or the branch electrodes 1011, and fills
Gap between adjacent two branch electrodes 1011.Angle between the branch electrodes 1011 and the main electrode 1012
It is 45 degree or 135 degree.
The pixel electrode layer and the common electrode are opposite.
The common electrode is by being set between the color membrane substrates 102 and the thin-film transistor array base-plate 101
Conductive member be connected with the common wire in the thin-film transistor array base-plate 101.The pixel electrode layer with it is described common
Electrode is for forming voltage difference between the color membrane substrates 102 and the thin-film transistor array base-plate 101, so that the liquid
Liquid crystal molecule deflection in crystal layer 103.
The transparent material layer 1013 is used for so that the thin-film transistor array base-plate 101 is corresponding with the pixel electrode
Part planarization, to improve the light transmittance of edge of the thin-film transistor array base-plate 101 in the pixel electrode.
The first surface of the transparent material layer 1013 is coplanar with second surface, and the first surface is the transparent material
The surface of the first part of 1013 covering of the layer main electrode 1012 and/or the branch electrodes 1011, the second surface
The surface of the second part in the gap between adjacent two branch electrodes 1011 is filled for the transparent material layer 1013.
Above-mentioned term " coplanar " includes: (1) described first surface and the second surface is plane, the first surface
It is in same plane with the second surface；(2) at least one of the first surface and the second surface are not
Plane, for example, there is the position of protrusion or the position of recess at least one of the first surface, described second surface, but
It is that the first surface and the second surface belong to same plane on the whole, wherein the first surface and described second
The area of the part of the area and recess for the part protruded in surface accounts for the gross area of the first surface and the second surface
The ratio between be less than or equal to 30%.
The first surface and the second surface are parallel with plane corresponding to the substrate 1016.
The thickness of the second part is equal to the sum of the thickness of the first part and predetermined segment difference, wherein described predetermined
The bottom surface in gap of the segment difference between the main electrode and/or the top surface and adjacent two branch electrodes of the branch electrodes
Between difference in height.
The thickness of the first part is in the range of 1 nanometer to 100 nanometers.Specifically, the thickness of the first part
It spends and is received for 1 nanometer, 5 nanometers, 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 35 nanometers, 40 nanometers, 45 nanometers, 50
Rice, 55 nanometers, 60 nanometers, 65 nanometers, 70 nanometers, 75 nanometers, 80 nanometers, 85 nanometers, 90 nanometers, 95 nanometers, in 100 nanometers
One.
The transparent material is transparent organic material, in transparent inorganic material, transparent organic-inorganic hybrid material
One of.
The transparent organic material may be, for example, that polyimides, polysiloxanes, epoxy resin, polymer graphite alkene etc. have
Machine polymer etc..
The transparent inorganic material may be, for example, silica (SiOx), titanium oxide (TiOx), calcirm-fluoride (CaFx), nitridation
Silicon (SiNx), silicon oxynitride (SiNxOx), magnesium fluoride (MgF2), aluminium oxide (Al2O3), tantalum oxide (Ta2O5), zinc sulphide
(ZnS) etc..
The transparent material layer 1013 is the transparent material by being coated with liquid on the pixel electrode layer, and right
The display device layer applies the shock effect power of preset frequency, so that the transparent material fills two points under gravity
Gap between branch electrode, and the covering branch electrodes and main electrode, then will be set on the pixel electrode layer
The transparent material solid-state is cured as to be formed, can make in this way the transparent material be sufficient filling with two branch electrodes it
Between gap, and the position for avoiding the branch electrodes and the transparent material from contacting generates the bubble for interfering light to penetrate
(bubble is extruded from the transparent material of liquid by the shock effect power), and it is advantageously ensured that first table
Face and the second surface are coplanar.Wherein, the preset frequency is in the range of 1 time per second vibration to 100 times per second vibrations.
By at least one first sub- material layer and at least, one second sub- material layer forms the transparent material layer 1013.Institute
The material for stating the first sub- material layer is identical with the material of the described second sub- material layer.
As an improvement the surface at position of the insulating layer 1014 between adjacent two branch electrodes 1011
The first pleated portions are provided with, the first pleated portions lodging is in adjacent another first pleated portions, the transparent material layer
1013 at least part is embedded in the gap between adjacent two first pleated portions, and the transparent material layer 1013 is arranged
There are the second pleated portions, in adjacent another second pleated portions, the insulating layer 1014 is located at phase for the second pleated portions lodging
Between at least part at the position between adjacent two branch electrodes 1011 is embedded between adjacent two second pleated portions
In gap.
First pleated portions and second pleated portions are strip.
First pleated portions are located at by the intersection of the insulating layer 1014 and the branch electrodes 1011.Described second
The middle section in gap of the pleated portions between two branch electrodes 1011.
The terminal edge of first pleated portions and/or second pleated portions is provided with sawtooth portion.
In the present invention, due to being additionally provided with transparent material layer, the transparent material layer in thin-film transistor array base-plate
The main electrode and/or the branch electrodes are covered, and fill the gap between adjacent two branch electrodes, therefore can
So that the surface of part corresponding with the pixel electrode is flat condition in thin-film transistor array base-plate, to be conducive to mention
The light transmission rate of the high display panel, and advantageously reduce the light reflectivity of the display panel.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of thin-film transistor array base-plate, which is characterized in that the thin-film transistor array base-plate includes:
Display device layer, the display device layer include at least two pixel electrodes, and the pixel electrode includes main electrode and divides
Branch electrode；And
Transparent material layer, the transparent material layer covers the main electrode and/or the branch electrodes, and fills adjacent two
Gap between the branch electrodes.
2. thin-film transistor array base-plate according to claim 1, which is characterized in that the first table of the transparent material layer
Face is coplanar with second surface；
Wherein, the first surface is that the transparent material layer covers the first of the main electrode and/or the branch electrodes
Partial surface, the second surface are that the transparent material layer fills second of the gap between adjacent two branch electrodes
Partial surface.
3. thin-film transistor array base-plate according to claim 2, which is characterized in that the thickness of the second part is equal to
The sum of the thickness of the first part and predetermined segment difference, wherein the predetermined segment difference is the main electrode and/or the branch
Difference in height between the bottom surface in the gap between the top surface of electrode and adjacent two branch electrodes.
4. thin-film transistor array base-plate according to claim 2, which is characterized in that the thickness of the first part is in
In the range of 1 nanometer to 100 nanometers.
5. thin-film transistor array base-plate according to claim 1, which is characterized in that the transparent material includes oxidation
Silicon, titanium oxide, calcirm-fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminium oxide, tantalum oxide, zinc sulphide, polyimides, poly- silicon oxygen
One of alkane, epoxy resin, polymer graphite alkene or one or more of combination.
6. a kind of display panel, which is characterized in that the display panel includes:
Color membrane substrates；
Liquid crystal layer；And
Thin-film transistor array base-plate；
Wherein, the thin-film transistor array base-plate includes:
Display device layer, the display device layer include at least two pixel electrodes, and the pixel electrode includes main electrode and divides
Branch electrode；And
Transparent material layer, the transparent material layer covers the main electrode and/or the branch electrodes, and fills adjacent two
Gap between the branch electrodes.
7. display panel according to claim 6, which is characterized in that the first surface of the transparent material layer and the second table
Face is coplanar；
Wherein, the first surface is that the transparent material layer covers the first of the main electrode and/or the branch electrodes
Partial surface, the second surface are that the transparent material layer fills second of the gap between adjacent two branch electrodes
Partial surface.
8. display panel according to claim 7, which is characterized in that the thickness of the second part is equal to described first
The sum of the thickness divided and predetermined segment difference, wherein the predetermined segment difference is the top surface of the main electrode and/or the branch electrodes
Difference in height between the bottom surface in the gap between adjacent two branch electrodes.
9. display panel according to claim 7, which is characterized in that the thickness of the first part is in 1 nanometer to 100
In the range of nanometer.
10. display panel according to claim 6, which is characterized in that the transparent material include silica, titanium oxide,
Calcirm-fluoride, silicon nitride, silicon oxynitride, magnesium fluoride, aluminium oxide, tantalum oxide, zinc sulphide, polyimides, polysiloxanes, asphalt mixtures modified by epoxy resin
One of rouge, polymer graphite alkene or one or more of combination.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910259559.9A CN109901321B (en) | 2019-04-02 | 2019-04-02 | Thin film transistor array substrate and display panel |
| PCT/CN2019/082731 WO2020199245A1 (en) | 2019-04-02 | 2019-04-15 | Thin film transistor array substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910259559.9A CN109901321B (en) | 2019-04-02 | 2019-04-02 | Thin film transistor array substrate and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109901321A true CN109901321A (en) | 2019-06-18 |
| CN109901321B CN109901321B (en) | 2021-05-07 |
Family
ID=66955170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910259559.9A Active CN109901321B (en) | 2019-04-02 | 2019-04-02 | Thin film transistor array substrate and display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109901321B (en) |
| WO (1) | WO2020199245A1 (en) |
Citations (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11311791A (en) * | 1993-07-22 | 1999-11-09 | Semiconductor Energy Lab Co Ltd | Liquid crystal electrooptic device |
| JP4145729B2 (en) * | 2003-06-13 | 2008-09-03 | セイコーエプソン株式会社 | Manufacturing method of liquid crystal device |
| CN101494271A (en) * | 2009-02-20 | 2009-07-29 | 隆达电子股份有限公司 | Method for manufacturing LED device and spraying equipment |
| JP2009175564A (en) * | 2008-01-28 | 2009-08-06 | Sony Corp | Display device |
| CN201984265U (en) * | 2011-01-14 | 2011-09-21 | 京东方科技集团股份有限公司 | Array substrate and liquid crystal display |
| CN102323696A (en) * | 2011-07-20 | 2012-01-18 | 深圳市华星光电技术有限公司 | Liquid crystal coating device and method |
| CN102778817A (en) * | 2012-08-14 | 2012-11-14 | 四川虹视显示技术有限公司 | Defoaming method and device of photoresist |
| CN102890357A (en) * | 2004-09-03 | 2013-01-23 | 精工爱普生株式会社 | Liquid crystal display device and electronic apparatus |
| CN103454811A (en) * | 2013-09-12 | 2013-12-18 | 京东方科技集团股份有限公司 | Manufacturing device and method for liquid crystal orientation layer |
| CN103521395A (en) * | 2013-10-28 | 2014-01-22 | 合肥京东方光电科技有限公司 | Coating apparatus |
| CN103852939A (en) * | 2012-12-05 | 2014-06-11 | 三星显示有限公司 | Liquid crystal display apparatus |
| CN104122719A (en) * | 2013-04-25 | 2014-10-29 | 三星显示有限公司 | Method of manufacturing liquid crystal display device |
| CN104267550A (en) * | 2014-10-14 | 2015-01-07 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| CN104777693A (en) * | 2015-04-28 | 2015-07-15 | 深圳市华星光电技术有限公司 | High-transparency PSVA (polymer-stabilized vertical alignment) type liquid crystal display panel and manufacturing method thereof |
| CN105094409A (en) * | 2014-05-16 | 2015-11-25 | 群创光电股份有限公司 | Touch display panel |
| CN105161542A (en) * | 2015-08-06 | 2015-12-16 | 深圳市华星光电技术有限公司 | Film transistor array substrate, preparation method thereof and liquid crystal panel |
| CN105988241A (en) * | 2015-03-18 | 2016-10-05 | 三星显示有限公司 | Curved display device |
| CN106877732A (en) * | 2017-03-17 | 2017-06-20 | 中国科学院半导体研究所 | Friction generator and preparation method based on fold conductive film, integrated morphology |
| CN106909007A (en) * | 2015-12-22 | 2017-06-30 | 三星显示有限公司 | Liquid crystal display device |
| US20180047946A1 (en) * | 2016-08-10 | 2018-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| CN108490653A (en) * | 2018-03-27 | 2018-09-04 | 武汉华星光电技术有限公司 | For make substrate layer homogenize equipment and in the method for base plate coating film layer |
| CN110087875A (en) * | 2016-12-14 | 2019-08-02 | 3M创新有限公司 | Segmented protection display film |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100112422A (en) * | 2009-04-09 | 2010-10-19 | 삼성전자주식회사 | Display apparatus |
| TWI564638B (en) * | 2014-07-18 | 2017-01-01 | 友達光電股份有限公司 | Pixel structure of display panel |
| CN104914635B (en) * | 2015-06-25 | 2018-05-01 | 深圳市华星光电技术有限公司 | Pixel electrode and liquid crystal display panel |
-
2019
- 2019-04-02 CN CN201910259559.9A patent/CN109901321B/en active Active
- 2019-04-15 WO PCT/CN2019/082731 patent/WO2020199245A1/en active Application Filing
Patent Citations (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11311791A (en) * | 1993-07-22 | 1999-11-09 | Semiconductor Energy Lab Co Ltd | Liquid crystal electrooptic device |
| JP4145729B2 (en) * | 2003-06-13 | 2008-09-03 | セイコーエプソン株式会社 | Manufacturing method of liquid crystal device |
| CN102890357A (en) * | 2004-09-03 | 2013-01-23 | 精工爱普生株式会社 | Liquid crystal display device and electronic apparatus |
| JP2009175564A (en) * | 2008-01-28 | 2009-08-06 | Sony Corp | Display device |
| CN101494271A (en) * | 2009-02-20 | 2009-07-29 | 隆达电子股份有限公司 | Method for manufacturing LED device and spraying equipment |
| CN201984265U (en) * | 2011-01-14 | 2011-09-21 | 京东方科技集团股份有限公司 | Array substrate and liquid crystal display |
| CN102323696A (en) * | 2011-07-20 | 2012-01-18 | 深圳市华星光电技术有限公司 | Liquid crystal coating device and method |
| CN102778817A (en) * | 2012-08-14 | 2012-11-14 | 四川虹视显示技术有限公司 | Defoaming method and device of photoresist |
| CN103852939A (en) * | 2012-12-05 | 2014-06-11 | 三星显示有限公司 | Liquid crystal display apparatus |
| CN104122719A (en) * | 2013-04-25 | 2014-10-29 | 三星显示有限公司 | Method of manufacturing liquid crystal display device |
| CN103454811A (en) * | 2013-09-12 | 2013-12-18 | 京东方科技集团股份有限公司 | Manufacturing device and method for liquid crystal orientation layer |
| CN103521395A (en) * | 2013-10-28 | 2014-01-22 | 合肥京东方光电科技有限公司 | Coating apparatus |
| CN105094409A (en) * | 2014-05-16 | 2015-11-25 | 群创光电股份有限公司 | Touch display panel |
| CN104267550A (en) * | 2014-10-14 | 2015-01-07 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| CN105988241A (en) * | 2015-03-18 | 2016-10-05 | 三星显示有限公司 | Curved display device |
| CN104777693A (en) * | 2015-04-28 | 2015-07-15 | 深圳市华星光电技术有限公司 | High-transparency PSVA (polymer-stabilized vertical alignment) type liquid crystal display panel and manufacturing method thereof |
| CN105161542A (en) * | 2015-08-06 | 2015-12-16 | 深圳市华星光电技术有限公司 | Film transistor array substrate, preparation method thereof and liquid crystal panel |
| CN106909007A (en) * | 2015-12-22 | 2017-06-30 | 三星显示有限公司 | Liquid crystal display device |
| US20180047946A1 (en) * | 2016-08-10 | 2018-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| CN110087875A (en) * | 2016-12-14 | 2019-08-02 | 3M创新有限公司 | Segmented protection display film |
| CN106877732A (en) * | 2017-03-17 | 2017-06-20 | 中国科学院半导体研究所 | Friction generator and preparation method based on fold conductive film, integrated morphology |
| CN108490653A (en) * | 2018-03-27 | 2018-09-04 | 武汉华星光电技术有限公司 | For make substrate layer homogenize equipment and in the method for base plate coating film layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109901321B (en) | 2021-05-07 |
| WO2020199245A1 (en) | 2020-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9025108B2 (en) | Display apparatus | |
| CN105116642B (en) | Array substrate and preparation method thereof, display device | |
| TW538291B (en) | Vertical alignment mode liquid crystal display | |
| US20130002625A1 (en) | Pixel structure and method of driving the same | |
| CN101568876B (en) | Liquid crystal display panel, and liquid crystal display device | |
| CN205353532U (en) | Array substrate and display panel | |
| CN110610948B (en) | Array substrate and display device | |
| US20060279683A1 (en) | Fringe field switching mode LCD having high transmittance | |
| US20160284302A1 (en) | Driving method of electro-optical device, electro-optical device and electronic apparatus | |
| JP5215617B2 (en) | Liquid crystal display | |
| WO2011158424A1 (en) | Thin film transistor substrate and liquid crystal display device | |
| US20190181272A1 (en) | Manufacturing method of tft substrate and tft substrate | |
| CN107204403A (en) | Display device | |
| JP2001100232A (en) | Electrode structure of wide view angle liquid crystal display | |
| CN106298809B (en) | Thin-film transistor array base-plate and preparation method thereof, liquid crystal display device | |
| CN108666447B (en) | Display substrate, manufacturing method thereof and display device | |
| US8947606B2 (en) | Display device capable of switching between a two-dimensional displaying mode and three-dimensional displaying mode | |
| CN103809339B (en) | Liquid crystal indicator | |
| TW200519499A (en) | Reflective liquid crystal display devices, fabricating method thereof and liquid crystal display device | |
| JP3586674B2 (en) | Liquid crystal display | |
| CN204905257U (en) | Array substrate , display device | |
| KR20090034191A (en) | Display substrate, display panel having the display substrate and method for driving the display panel | |
| US10520763B2 (en) | Vcom drift improvements by new design and compensation techniques | |
| CN202126557U (en) | Array substrate | |
| CN101859048A (en) | EPD (Electrophoretic Display Device) and pixel structure thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |