WO2020199206A1 - Système et procédé de détection de défaut microscopique dans un matériau transparent ou semi-transparent - Google Patents

Système et procédé de détection de défaut microscopique dans un matériau transparent ou semi-transparent Download PDF

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Publication number
WO2020199206A1
WO2020199206A1 PCT/CN2019/081552 CN2019081552W WO2020199206A1 WO 2020199206 A1 WO2020199206 A1 WO 2020199206A1 CN 2019081552 W CN2019081552 W CN 2019081552W WO 2020199206 A1 WO2020199206 A1 WO 2020199206A1
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transparent
defect
frequency
scanning
scattered light
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PCT/CN2019/081552
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English (en)
Chinese (zh)
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王星泽
闫静
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合刃科技（深圳）有限公司
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Priority to PCT/CN2019/081552 priority Critical patent/WO2020199206A1/fr
Priority to CN201980005534.4A priority patent/CN111316090A/zh
Publication of WO2020199206A1 publication Critical patent/WO2020199206A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8914—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the material examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
    • G01N21/896—Optical defects in or on transparent materials, e.g. distortion, surface flaws in conveyed flat sheet or rod
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8867—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing
    • G01N2021/887—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing the measurements made in two or more directions, angles, positions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8874—Taking dimensions of defect into account
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

Definitions

  • the invention relates to the technical field of industrial inspection, in particular to a system and method for detecting microscopic defects of transparent or translucent materials.
  • the detection methods for scratches in the industrial inspection field are: 1. Use low-angle monochromatic light to illuminate the object; 2. Collect images by CCD/CMOS; 3. Use image processing software to process the images and defects Perform testing. Due to the limitations of the current lighting hardware, the traditional method can only detect scratches in a certain direction, but in practical applications, the direction of the scratches is uncertain, so it is easy to miss and misdetect.
  • the present invention specifically proposes A system for detecting microscopic defects of transparent or translucent materials.
  • a microscopic defect detection system for transparent or translucent materials including:
  • Coherent light source used to emit a coherent beam to scan transparent or semi-transparent samples
  • the photoelectric sensor is used to collect the scattered light intensity imaging of the sample, the photoelectric sensor, the coherent light source and the sample have a relative collection position in space, and the relative collection position includes at least a scattering angle and a State the distance of the seized material;
  • the frequency threshold range is a reference value range based on light scattering from an impure medium, which is calculated in advance according to the Lorenz-Mie theory and corresponds to the relative collection position.
  • the system further includes a stage for carrying the inspection material
  • the stage also includes an orthogonal X-direction and Y-direction movement mechanism for driving the inspection material to move in the X direction and the Y direction for scanning;
  • the position of the coherent light source, the photoelectric sensor, and the sample is relatively fixed during the scanning process.
  • the controller is used to move the coherent light source and/or the photoelectric sensor to scan the sample
  • the controller is also used to monitor the relative collection position of the photoelectric sensor with respect to the coherent light source and the sample, and obtain the frequency threshold range corresponding to the relative collection position.
  • the number of the photoelectric sensors is N, and N is greater than or equal to 2.
  • the N photoelectric sensors, the coherent light source, and the sample have N relative collection positions in space.
  • the controller is also used to monitor the N cutoff frequencies corresponding to the scattered light intensity imaging collected by the N relative acquisition positions corresponding to the scanning position, and if there is a cutoff frequency that does not belong to the corresponding frequency threshold range, the scanning position is recorded Is the defect location.
  • the coherent light source is a laser light source
  • the inspection material is scanned in a line scan manner.
  • the present invention also proposes a problem.
  • a method for detecting microscopic defects of transparent or translucent materials is based on the aforementioned controller.
  • a method for detecting microscopic defects of transparent or translucent materials including:
  • the relative collection position includes at least a scattering angle and a distance to the sample; the cutoff frequency corresponds to the scanning position and the relative collection position corresponding to the scanning position;
  • the frequency threshold range is a reference value range based on light scattering from an impure medium, which is calculated in advance according to the Lorenz-Mie theory and corresponds to the relative collection position.
  • the scan is a line scan
  • the scan direction includes orthogonal X direction and Y direction.
  • N there are N relative collection positions, and N is greater than or equal to 2;
  • the monitoring of the scanning position when the cutoff frequency does not belong to the frequency threshold range as the defect position includes:
  • the method further includes:
  • the transparent or semi-transparent material is scanned by coherent light, and the scan is When scanning the position, collect the scattered light intensity distribution at a certain scattering angle and distance, and compare the scattered light intensity distribution with the reference value calculated according to the Lorenz-Mie theory, and the scattered light intensity distribution does not meet the reference value
  • the scanning position is recorded as the defect position, so that after the scanning is completed, the size and type of the defect in the sample can be determined by integrating the collection of the defect position in the sample.
  • Figure 1 is a schematic diagram of a transparent or translucent material micro defect detection system in an embodiment
  • Figure 2 is a distribution diagram of the spatial scattered light intensity of the same refractive index and different defect sizes
  • Figure 3 shows the amplitude-frequency curve and phase-frequency curve of the scattered light intensity distribution with a refractive index of 0.56 and a defect size of 6.6um after FFT transformation in an embodiment
  • Figure 4 shows the amplitude-frequency curve and phase-frequency curve of the scattered light intensity distribution with a refractive index of 0.56 and a defect size of 13.2um after FFT transformation in an embodiment
  • Fig. 5 is a schematic diagram of defect detection principle in an embodiment
  • Fig. 6 is a flow chart of a method for detecting microscopic defects of transparent or translucent materials in an embodiment.
  • the present invention A system for detecting microscopic defects of transparent or semi-transparent materials is proposed, which includes a coherent light source 10, a photoelectric sensor 20, and a controller 30.
  • the coherent light source 10 is used to emit a coherent beam to scan a transparent or semi-transparent sample, and may be a laser, a laser diode, a laser array, or the like.
  • the photoelectric sensor 20 is used to collect the scattered light intensity imaging of the sample, and it may be a camera or other photosensitive elements that can convert light signals into electrical signals.
  • the controller 30 may be a computer system based on the Von Neumann system that relies on the execution of a computer program, may be a single-chip microcomputer integrated on other components, or may be an independent personal computer, notebook computer, or server device.
  • the transparent or translucent material micro defect detection system of the present invention is based on the generalized Lorenz-Mie theory.
  • light scattering is divided into two types: pure medium light scattering and impure medium light scattering.
  • Light scattering from impure media refers to the scattering phenomenon of light when light is transmitted in materials containing defects (such as bubbles, impurities, cracks, ripples, scratches, bumps, etc.) when it encounters these defects. This kind of scattering phenomenon is not inherent to the substance itself, and the intensity of its scattered light is related to the nature of the defect. The frequency of the scattered light and the incident light are the same, and the intensity of the scattered light is also related to the wavelength of the incident light, specifically:
  • Isca is the intensity of scattered light
  • ⁇ is the wavelength of incident light
  • a is a positive integer.
  • ⁇ 0 is the laser beam waist size of the laser beam.
  • r is the distance from point P to the scatterer
  • ⁇ is the scattering angle of point P
  • q is the particle size parameter
  • m is the relative complex refractive index
  • ⁇ 0 is the laser beam waist size of the laser beam
  • I 0 is the incident light intensity.
  • the light intensity of point P can be expressed as:
  • a n , b n , ⁇ n , ⁇ n are the Mie scattering coefficients.
  • m and q are unknown in actual detection, they can pass To control the photoelectric sensor to obtain different spatial light intensity combinations at different spatial receiving positions, that is, select multiple P points on the scatterer sphere to collect scattered light intensity information, and establish the relationship between spatial light intensity and defect information, and then use theoretical simulation
  • the method combined with reality establishes a database model corresponding to the relative collection position of the scattered light collected by the photoelectric sensor (the aforementioned P point position) and the spatial distribution of the scattered light intensity, and then the scattered light collected by the photoelectric sensor at a certain relative collection position P
  • the light intensity is compared with the reference scattered light intensity corresponding to the relative collection position P stored in the database model. According to the difference, it can be judged whether the scattered light intensity collected at the relative collection position P is the scattered light caused by the defect. Determine whether there are defects and the size of the defects.
  • the coherent light source 10 and the sample When applied to the embodiment of the present invention, that is, the photoelectric sensor 20, the coherent light source 10 and the sample have a relative collection position in space, and the relative collection position includes at least the scattering angle and the distance to the sample.
  • the controller 30 is used to obtain the scattered light intensity imaging corresponding to the scanning position; perform Fourier transform on the scattered light intensity imaging to obtain the corresponding amplitude spectrum and phase spectrum, and obtain the corresponding amplitude spectrum and phase spectrum. Cutoff frequency; The cutoff frequency corresponds to the scanning position and the relative acquisition position corresponding to the scanning position.
  • the controller 30 is also used to monitor the scan position when the cutoff frequency does not belong to the frequency threshold range as the defect position, and determine the defect according to the defect position; and the frequency threshold range is calculated in advance according to the Lorenz-Mie theory, The reference value range based on the light scattering of the impure medium corresponding to the relative collection position.
  • FIG. 2 which shows the distribution of spatially scattered light intensity under defects with a material refractive index of 0.56 and a defect radius of 6.6um and 13.2um.
  • the value of the distance between the wave crests in the spatial range becomes smaller, more precisely, the value of the angle between the two wave crests becomes smaller and smaller.
  • the distribution of the spatial scattered light intensity within a certain range is passed through FFT (Fourier transform), for the same refractive index (same defect material) and different q values (different defect sizes), as the q value increases, that is, as the defect size increases, the phase frequency and amplitude frequency
  • the cutoff frequency of the curve also increases accordingly.
  • Figures 3 and 4 show the amplitude-frequency curve and phase-frequency curve of the scattered light intensity distribution after FFT transformation.
  • the cut-off frequency of the scattered light in the fixed space also increases monotonously, so in the actual inspection process, the cut-off frequency of the scattered light in the fixed space can be used to judge Defect size. In actual inspection, it is only necessary to compare the actual received scattered light cut-off frequency with the theoretically calculated simulation value to determine the existence and size of the defect.
  • the system further includes a stage 40 for carrying the inspection material.
  • the stage also includes orthogonal X-direction and Y-direction movement mechanisms for driving the inspection material to move in the X-direction and Y-direction for scanning.
  • the coherent light source, the photoelectric sensor, and the sample are relatively fixed in position during the scanning process.
  • the scanning process is a linear coherent light beam emitted by a coherent light source, and the stage 40 moves the animal in the X or Y direction along the X-axis or Y-axis, so that the coherent beam is oriented toward transparent or semi-transparent building materials.
  • the cut-off frequency of the amplitude-frequency curve information and phase-frequency curve information generated by the scattered light intensity of the measured object through FFT transformation, and the cut-off frequency is a database corresponding to the relative collection position pre-calculated by the theoretical value and the spatial distribution of the scattered light intensity
  • the frequency threshold range stored in the model is compared with the frequency threshold range corresponding to the relative acquisition position in real time. If the cut-off frequency is not within the frequency threshold range, the scanning position is recorded as the defect position.
  • the stage 40 drives the inspection material to move along the X axis, when it reaches the x1 position, it is detected that the cutoff frequency is not in the corresponding frequency threshold range, and when it reaches the x2 position, the cutoff frequency is detected
  • the recovery is in the corresponding frequency threshold range, which can be recorded on the X axis, and there is a defect in the position between x1 and x2.
  • the stage 40 drives the inspection material to move along the Y axis, when it reaches the y1 position, it is detected that the cutoff frequency is not in the corresponding frequency threshold range, and when the y2 position is reached, the cutoff frequency is detected to be restored to the corresponding frequency threshold.
  • the range it can be recorded on the Y axis, and the position in the interval between y1 and y2 is defective. Then, it can be determined that there are defects in the rectangular positions determined by the four vertices x1, x2, y1, and y2 of the sample.
  • the controller 30 is used to move the coherent light source 10 and/or the photoelectric sensor 20 to scan the sample.
  • the controller 30 is also used to monitor the relative collection position of the photoelectric sensor 20 with respect to the coherent light source 10 and the sample, and obtain the frequency threshold range corresponding to the relative collection position.
  • a fixed stage can be used to scan the sample without moving the sample through the stage, but the scanning line can be moved by moving the coherent light source 10 to realize the scanning of the sample.
  • the defect recognition algorithm is the same. It only needs to obtain the relative position of the real-time coherent light source 10 and the photoelectric sensor 20 to determine the relative acquisition position of the photoelectric sensor 20 to collect the scattering imaging at the time, which can be read from the aforementioned database. Take the corresponding frequency threshold range and compare it with the cut-off frequency of real-time monitoring to identify the defects of the inspected material.
  • the number of photoelectric sensors may be N, and N is greater than or equal to 2.
  • the N photoelectric sensors, the coherent light source, and the inspection material have N relative collection positions in space, and in the scanning process, for a scanning position, there are corresponding N relative collection positions.
  • the controller is also used to monitor the N cutoff frequencies corresponding to the scattered light intensity imaging collected by the N relative acquisition positions corresponding to the scanning position, and if there is a cutoff frequency that does not belong to the corresponding frequency threshold range, the scanning position is recorded as a defect position.
  • multiple photoelectric sensors can be set, and when scanning to a scanning position, it can be collected at multiple relative collection positions, as long as there is a cut-off frequency of the scattered light intensity distribution collected at a relative collection position and is not pre-stored in the database Within the frequency threshold range corresponding to the relative collection position, it is determined that the sample has a defect at the scanning position. In this way, a single photoelectric sensor collection may be affected by ambient light or other noises, which may cause missed detection. Multiple photoelectric sensors can be used to detect at multiple scattering angles, thereby preventing missed detection.
  • the controller 30 can verify the defects in the inspected material by other means, such as manual re-inspection, or re-inspection in other ways, so as to confirm the accuracy of the defect detection.
  • the frequency threshold range corresponding to the relative acquisition position of the wrongly detected defect in the database can be updated according to the re-inspection situation, so that the theoretical reference value can be updated
  • the reference value can reduce false detections and improve the accuracy of detection during the next detection.
  • the present invention A method for detecting microscopic defects of transparent or semi-transparent materials is also proposed.
  • the execution of the method relies on a computer program and is based on the aforementioned controller 30. Specifically, the method includes:
  • Step S102 Scan the sample through the coherent beam.
  • Step S104 When scanning to a scanning position: collect the scattered light intensity imaging of the sample at a relative collection position; perform Fourier transform on the scattered light intensity imaging to obtain the corresponding amplitude spectrum and phase spectrum, and obtain the Cutoff frequency of the amplitude spectrum and phase spectrum.
  • the relative collection position includes at least a scattering angle and a distance to the sample; the cutoff frequency corresponds to the scanning position and the relative collection position corresponding to the scanning position.
  • Step S106 Monitor the scan position when the cut-off frequency does not belong to the frequency threshold range as the defect position, and determine the defect based on the defect position; the frequency threshold range is calculated in advance according to the Lorenz-Mie theory, and is consistent with The reference value range based on the light scattering of the impure medium corresponding to the relative collection position.
  • the scan is a line scan
  • the scan direction includes orthogonal X direction and Y direction.
  • N relative collection positions there are N relative collection positions, and N is greater than or equal to 2.
  • Monitoring the scanning position when the cutoff frequency does not belong to the frequency threshold range as the defect position includes:
  • the method further includes: verifying the defect, and updating the frequency threshold range according to the verification result.
  • the transparent or translucent material micro-defect detection system and the transparent or translucent material micro-defect detection method based on the controller in the system, for transparent or translucent materials, scan them by coherent light, and then scan them.
  • scan the position collect the scattered light intensity distribution at a certain scattering angle and distance, and compare the scattered light intensity distribution with the reference value calculated according to the Lorenz-Mie theory, and the scattered light intensity distribution does not meet the reference value
  • the scanning position is recorded as the defect position, so that after the scanning is completed, the size and type of the defect in the sample can be determined by integrating the collection of the defect position in the sample.
  • the above-mentioned system and method will not be affected by the light transmittance of transparent or translucent samples due to the scattered light collected.
  • the false detection rate and the missed detection rate are low.

Abstract

L'invention concerne un système et un procédé de détection de défaut microscopique dans un matériau transparent ou semi-transparent, ledit système de détection comprenant : une source de lumière cohérente (10), utilisée pour un balayage d'un matériau échantillon transparent ou semi-transparent par un faisceau cohérent émis ; un capteur photoélectrique (20), utilisé pour acquérir des images de l'intensité lumineuse diffusée par ledit matériau échantillon ; un dispositif de commande (40), utilisé pour obtenir les images de l'intensité lumineuse diffusée correspondant à la position de balayage ; effectuer une transformée de Fourier sur les images de l'intensité lumineuse diffusée pour obtenir un spectre d'amplitude et un spectre de phase correspondants, et obtenir les fréquences de coupure dudit spectre d'amplitude et dudit spectre de phase ; lesdites fréquences de coupure correspondent à la position de balayage et à la position relative correspondante d'acquisition ; surveiller la position de balayage lorsque la fréquence de coupure ne se situe pas dans une plage de fréquences seuils, considérer la position de balayage comme correspondant à la position d'un défaut, et déterminer un défaut en fonction de ladite position du défaut. La plage de fréquences seuils est calculée à l'avance selon la théorie de Lorenz-Mie et constitue une plage de valeurs de référence fondée sur la diffusion de la lumière par un milieu impur correspondant à la position relative d'acquisition.
PCT/CN2019/081552 2019-04-04 2019-04-04 Système et procédé de détection de défaut microscopique dans un matériau transparent ou semi-transparent WO2020199206A1 (fr)

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PCT/CN2019/081552 WO2020199206A1 (fr) 2019-04-04 2019-04-04 Système et procédé de détection de défaut microscopique dans un matériau transparent ou semi-transparent
CN201980005534.4A CN111316090A (zh) 2019-04-04 2019-04-04 透明或半透明材料微观缺陷检测系统及方法

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PCT/CN2019/081552 WO2020199206A1 (fr) 2019-04-04 2019-04-04 Système et procédé de détection de défaut microscopique dans un matériau transparent ou semi-transparent

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CN111929310B (zh) * 2020-09-25 2021-02-05 歌尔股份有限公司 表面缺陷检测方法、装置、设备及存储介质

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CN107110793A (zh) * 2014-12-05 2017-08-29 株式会社爱发科 基板监视装置及基板监视方法

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