WO2020192051A1 - Panneau d'affichage et son procédé de préparation - Google Patents

Panneau d'affichage et son procédé de préparation Download PDF

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Publication number
WO2020192051A1
WO2020192051A1 PCT/CN2019/107653 CN2019107653W WO2020192051A1 WO 2020192051 A1 WO2020192051 A1 WO 2020192051A1 CN 2019107653 W CN2019107653 W CN 2019107653W WO 2020192051 A1 WO2020192051 A1 WO 2020192051A1
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WO
WIPO (PCT)
Prior art keywords
layer
black matrix
metal layer
display panel
metal
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Application number
PCT/CN2019/107653
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English (en)
Chinese (zh)
Inventor
唐芮
简庆宏
Original Assignee
武汉华星光电半导体显示技术有限公司
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Publication of WO2020192051A1 publication Critical patent/WO2020192051A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the technical field of display panels, in particular to a display panel and a preparation method thereof.
  • OLED Organic Light Emitting Diode
  • OLED has self-luminescence, low drive voltage, high luminous efficiency, short response time, high definition and contrast, a viewing angle of nearly 180 degrees, a wide operating temperature range, and it can realize flexible display and Large-area full-color display and many other advantages are recognized by the industry as the next-generation flat panel display emerging application technology.
  • Electroluminescence (EL) devices emit light through the polarizer layer (Polarizer, or POL), and the light intensity will be reduced by about 50%, especially for under-screen camera designs (CUP)
  • EL Electroluminescence
  • POL polarizer layer
  • CUP under-screen camera designs
  • the purpose of the present invention is to provide a display panel and a preparation method thereof.
  • the black matrix layer material is used to completely overlap the metal wires, and the polarizer layer on the original structure is removed, thereby not only solving the problem of array
  • the reflection effect of the metal layer on the substrate on the external light to ensure the normal display of the electroluminescent device after the light is emitted, and to increase the external light transmittance without the polarizer layer to ensure the normal operation of the under-screen camera.
  • the present invention provides a display panel, the display panel includes an array substrate, the display panel further includes: at least one first metal layer, the at least one first metal layer is disposed on the The array substrate; an interlayer dielectric layer, the interlayer dielectric layer is disposed on the at least one first metal layer; a second metal layer, the second metal layer is disposed on the interlayer dielectric layer ; At least one black matrix layer, the at least one black matrix layer is at least disposed on the second metal layer, and completely covers the at least one first metal layer and the second metal layer.
  • the black matrix layer when the at least one black matrix layer is a multilayer, the black matrix layer is respectively disposed on the second metal layer and the at least first metal layer, and completely covers the At least the first metal layer and the second metal layer.
  • the thickness of the at least one black matrix layer is 100 nm to 5000 nm.
  • the material of the at least one black matrix layer is black organic resin and black inorganic film.
  • the black inorganic film is metal oxide or metal sulfide.
  • the material of the at least one first metal layer is molybdenum.
  • the second metal layer has a laminated structure of titanium/aluminum/titanium.
  • the array substrate includes: a base substrate, an inorganic water blocking layer disposed on the base substrate, a buffer layer disposed on the inorganic water blocking layer, and a An active layer on the buffer layer and a gate insulating layer arranged on the active layer; wherein the at least one first metal layer is arranged on the gate insulating layer.
  • the present invention provides a manufacturing method using the above-mentioned display panel.
  • the manufacturing method includes: (1) providing a base substrate of an array substrate; (2) on the base substrate Deposit a first metal layer, and use a gate mask to pattern the first metal layer to form a first gate layer; (3) coating a black matrix layer on the first gate layer Material and perform exposure and development operations to form the black matrix layer with the same pattern as the first gate layer; (4) deposit an interlayer dielectric layer on the black matrix layer; (5) A second metal layer is deposited on the interlayer dielectric layer, and patterning is performed to form source and drain electrodes; (6) a black matrix layer material is coated on the source and drain electrodes, and exposure and development are performed Operation to form the black matrix layer with the same pattern as the source and drain electrodes; (7) provide an organic flat layer on the black matrix layer; (8) deposit an organic flat layer on the organic flat layer The anode is patterned; (9) corresponding electroluminescent materials and cathode materials are sequentially deposited on the
  • the present invention provides a method for manufacturing the above-mentioned display panel, the method includes: (a) providing a base substrate of an array substrate; (b) depositing on the base substrate A first metal layer, and patterning the first metal layer using a gate mask to form a first gate layer; (c) depositing an inter-dielectric layer on the first gate layer; (D) Deposit a second metal layer on the interlayer dielectric layer, and perform a patterning operation to form source and drain electrodes; (e) Coat a black matrix layer on the source and drain electrodes Material, and perform exposure and development operations to form the black matrix layer, and make the black matrix layer completely cover the first metal layer and the second metal layer; (f) set on the black matrix layer An organic flat layer; (g) deposit an anode on the organic flat layer, and pattern the anode; (h) deposit corresponding electroluminescent materials and cathode materials on the patterned anode in order to The electroluminescent layer and the cathode are formed
  • the advantage of the present invention is that the display panel of the present invention completely overlaps the metal layer (or metal wire) by using the black matrix layer material, and removes the polarizer layer on the original structure, thus not only can solve the problem on the array substrate
  • the reflection effect of the metal layer on the external light to ensure the normal display of the electroluminescent device after the light is emitted, and to increase the external light transmittance without the polarizer layer to ensure the normal operation of the camera under the screen.
  • the structure of removing the polarizer layer can reduce the thickness of the OLED device and facilitate bending.
  • FIG. 1 is a schematic diagram of a display panel in the first embodiment of the invention.
  • FIG. 2 is a flow chart of the steps of the manufacturing method of the display panel in the second embodiment of the present invention.
  • 3A to 3E are process flow diagrams of the manufacturing method of the display panel in the second embodiment of the present invention.
  • FIG. 4 is a flow chart of the steps of the manufacturing method of the display panel in the third embodiment of the present invention.
  • 5A to 5D are process flow diagrams of the manufacturing method of the display panel in the third embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the structure of the display device in the fourth embodiment of the present invention.
  • the embodiment of the present invention provides a display panel, a manufacturing method thereof, and a display device. The detailed description will be given below.
  • FIG. 1 is a schematic diagram of a display panel in the first embodiment of the invention.
  • the present invention provides a display panel (reference number 610 shown in FIG. 6).
  • the display panel 610 includes an array substrate 100, and the display panel 610 further includes: at least one first metal layer 200, The at least one first metal layer 200 is disposed on the array substrate 100; an interlayer dielectric layer 114 is disposed on the at least one first metal layer 200; a second metal layer 300, the second metal layer 300 is disposed on the interlayer dielectric layer 114; at least one black matrix layer 400, the at least one black matrix layer 400 is at least disposed on the second metal layer 300, and completely covers The at least one first metal layer 200 and the second metal layer 300.
  • the display panel 610 includes an array substrate 100.
  • the array substrate 100 is an OLED array substrate.
  • the array substrate 100 includes: a base substrate 101, an inorganic water blocking layer 102 disposed on the base substrate 101, a buffer layer 103 disposed on the inorganic water blocking layer 102, and a buffer layer 103 disposed on the buffer layer.
  • the at least one first metal layer 200 is disposed on the array substrate 100.
  • the at least one first metal layer 200 is disposed on the gate insulating layer 112 of the array substrate 100.
  • the base substrate 101 is a flexible base substrate, which provides a substrate environment for flexible display.
  • the flexible substrate is made of PI material.
  • the inorganic water blocking layer 102 is used to prevent water vapor from intruding from the PI layer, that is, from the flexible substrate.
  • the material of the inorganic water blocking layer 102 is SiNx (silicon nitride), SiOxNy (silicon oxynitride), SiOx (silicon oxide), SiCxNy (silicon carbonitride), ZnO (zinc oxide), AlOx (aluminum oxide), etc. , But not limited to this.
  • the buffer layer 103 is used to prevent ion implantation of the lower layer into the active layer 111.
  • the active layer 111 can form a TFT device after ion doping.
  • the material of the interlayer dielectric layer 114 is not limited to SiNx, SiOxNy, SiOx, SiCxNy, etc.
  • the first metal layer 200 is a first gate layer (using the same reference number as the first metal layer), that is, a single gate structure.
  • the first metal layer 200 is a multilayer, so the first metal layer 200 is the first gate layer GE1 or the second gate layer GE2 (the same as the first metal layer can be used).
  • the label that is, the double-gate structure. That is, at least one gate layer is provided on the gate insulating layer 112 (not marked in the figure, please refer to the number 200 in FIG. 1), and the number of the gate layer may be one or two. The layer is not limited to this.
  • the material of the gate layer (including the first gate layer GE1 and the second gate layer GE2) is molybdenum.
  • An interlayer dielectric layer 114 is provided on the gate layer.
  • a second metal layer 300 is provided on the interlayer dielectric layer 114.
  • the second metal layer 300 is a source electrode and a drain electrode (not marked in the figure). Further, the source electrode and the drain electrode are designed with a laminated structure of titanium/aluminum/titanium.
  • the black matrix layer 400 is provided at least on the second metal layer 300.
  • the black matrix layer 400 is provided on both the first metal layer 200 and the second metal layer 300.
  • the black matrix layer 400 completely covers the first metal layer 200 (which is the first gate layer or the second gate layer) and the second metal layer 300, that is, the covering metal layer.
  • covering not only means that the black matrix layer 400 is directly arranged on the surface of the metal layer, but also that the black matrix layer 400 is arranged above the metal layer, that is, is arranged on the projection surface of the metal layer.
  • a black matrix layer 400 is provided on the projection surface of the first metal layer 200 in FIG. 1.
  • the thickness of the black matrix layer 400 is 100 nanometers to 5000 nanometers, and the thickness can be limited according to actual requirements.
  • the material of the black matrix layer 400 is black organic resin and black inorganic film.
  • the black inorganic film may be a metal oxide or metal sulfide, such as copper oxide, iron oxide, manganese dioxide, ferroferric oxide, molybdenum sulfide, copper sulfide, and the like.
  • the display panel 610 of the present invention completely overlaps the metal layer (or metal wire) by using the black matrix layer material, and removes the polarizer layer on the original structure (that is, the polarizer layer in the prior art), Therefore, it can not only solve the reflection effect of the metal layer on the array substrate on the external light to ensure the normal display of the electroluminescent device after the light is emitted, but also increase the external light transmittance without the polarizer layer to ensure the under-screen The camera is working normally.
  • the structure of removing the polarizer layer can reduce the thickness of the OLED display panel and facilitate bending.
  • the black matrix layer 400 also covers metal traces such as scan lines and data lines.
  • an organic flat layer 411 is provided on the black matrix layer 400.
  • An anode 511 is provided on the organic flat layer 411.
  • the material of the anode 511 is a transparent electrode material, such as indium tin oxide ITO.
  • An electroluminescent layer 512 (including a red color resistor R, a green color resistor G, and a blue color resistor B) is disposed on the anode 511, namely, the EL light-emitting layer 512.
  • a pixel defining layer 412 is coated on the EL light-emitting layer 512.
  • the material of the pixel definition layer 412 and the organic flat layer 411 may be the same or different, for example, not limited to acrylic, polyacrylate, polycarbonate, and polystyrene.
  • a cathode 513 is provided on the EL light-emitting layer 512.
  • the display panel 610 further includes an encapsulation layer 600.
  • the encapsulation layer 600 is disposed on the cathode 513.
  • FIG. 2 is a flow chart of the steps of the manufacturing method of the display panel in the second embodiment of the present invention.
  • 3A to 3E are process flow diagrams of the manufacturing method of the display panel in the second embodiment of the present invention.
  • the present invention provides a manufacturing method using the above-mentioned display panel, wherein the structure of the display panel is as described above, which will not be repeated here.
  • the preparation method includes:
  • Step S210 Provide a base substrate of an array substrate.
  • the base substrate 101 is a flexible base substrate, which provides a flexible substrate for an OLED device.
  • the base substrate 101 may be made of PI material.
  • step S220 deposit a first metal layer on the base substrate, and use a gate mask to pattern the first metal layer to form a first gate layer.
  • a first metal layer 200 on the base substrate 101 may further include: disposing an inorganic water blocking layer 102, a buffer layer 103, an active layer 111 and a gate on the flexible base substrate. ⁇ insulation layer 112.
  • the inorganic water blocking layer 102 is used to prevent water vapor from intruding from the PI layer.
  • the buffer layer 103 is used to prevent lower layer ions from being implanted into the active layer 111.
  • the material of the gate insulating layer 112 is not limited to SiNx, SiOxNy, SiOx, SiCxNy, ZnO, AlOx.
  • the first metal layer 200 can be continuously deposited by PVD, sputtering, evaporation, etc., and a gate mask is used to form the patterned first metal layer. Grid layer.
  • step S230 coating a black matrix layer material on the first gate layer, and performing exposure and development operations to form the black matrix layer, and the black matrix layer and the first gate
  • the polar layer has the same pattern.
  • the material of the black matrix layer 400 is a black organic resin and a black inorganic film.
  • the black inorganic film can be a metal oxide or a metal sulfide, such as copper oxide, iron oxide, manganese dioxide, ferroferric oxide, molybdenum sulfide, Copper sulfide, etc.
  • exposure and development operations are performed to form the black matrix layer 400 with the same pattern as the first gate layer.
  • the black matrix layer 400 covers the first gate layer.
  • a first metal layer 200 is deposited again on the black matrix layer 400, and a gate mask is used to form a patterned second gate layer.
  • two gate layers are formed, including the first gate layer and the second gate layer.
  • a black matrix layer material is coated on the second gate layer, and exposure and development operations are performed to form the black matrix layer 400, and the black matrix layer 400 has the same pattern as the second gate layer At this time, the black matrix layer 400 also covers the second gate layer.
  • Step S240 deposit an interlayer dielectric layer on the black matrix layer.
  • An interlayer dielectric layer 114 is deposited on the black matrix layer 400, and an opening is provided in the interlayer dielectric layer 114, and the opening is used to make the source and drain in the subsequent steps and the active Layer 111 is connected.
  • step S250 deposit a second metal layer on the interlayer dielectric layer, and perform a patterning operation to form a source electrode and a drain electrode.
  • the structure of the source and drain is a stacked structure design of titanium/aluminum/titanium, which is not limited here.
  • Step S260 coating a black matrix layer material on the source and drain electrodes, and performing exposure and development operations to form the black matrix layer 401, and the black matrix layer 401 and the source and drain electrodes 300 same patterns.
  • the black matrix layer material is a black organic resin and a black inorganic film, wherein the black inorganic film can be a metal oxide or a metal sulfide, such as copper oxide, iron oxide, manganese dioxide, ferroferric oxide, molybdenum sulfide, copper sulfide Wait.
  • the black matrix layer 400 has the same pattern as the source and drain electrodes, that is, the black matrix layer 400 covers the source and drain electrodes. .
  • Step S270 Disposing an organic flat layer on the black matrix layer.
  • An organic flat layer 411 is formed on the black matrix layer 400.
  • step S280 deposit an anode on the organic flat layer and pattern it.
  • An anode 511 is deposited on the entire surface of the organic flat layer 411 and patterned.
  • the anode 511 is a transparent conductive electrode material and has a high hole injection capability, and indium tin oxide ITO is generally used.
  • Step S290 sequentially depositing corresponding electroluminescent materials and cathode materials on the anode to form an electroluminescent layer and a cathode respectively.
  • the electroluminescent material and the cathode material are sequentially deposited to form the electroluminescent layer 512 and the cathode, respectively.
  • an encapsulation layer may be covered on the cathode, and the encapsulation layer may be an alternately stacked structure of an organic layer and an inorganic layer.
  • the entire structure of the display panel 610 is coated on each metal layer by using the black matrix layer material, and the pattern is completely consistent with the covered metal layer, it can effectively block the external light on the metal layer (as The reflection on the electrode) prevents the light emitted by the electroluminescent device from interfering with the external reflected light and affecting the normal display of the display panel 610.
  • the black matrix layer 400 is provided to replace the polarizer structure in the display area above the camera, thereby greatly improving the external light transmittance and ensuring the normal operation of the camera.
  • FIG. 4 is a flow chart of the steps of the manufacturing method of the display panel in the third embodiment of the present invention.
  • 5A to 5D are process flow diagrams of the manufacturing method of the display panel in the third embodiment of the present invention.
  • the present invention also provides a method for manufacturing the above-mentioned display panel.
  • the structure of the display panel is as described above, which will not be repeated here.
  • the preparation method includes:
  • Step S410 Provide a base substrate of an array substrate.
  • the base substrate 101 is a flexible base substrate, which provides a flexible substrate for an OLED device.
  • the base substrate may be made of PI material.
  • step S420 deposit a first metal layer on the base substrate, and use a gate mask to pattern the first metal layer to form a first gate layer.
  • a first metal layer 200 on the base substrate 101 may further include: disposing an inorganic water blocking layer 102, a buffer layer 103, an active layer 111 and a gate on the flexible base substrate. ⁇ insulation layer 112.
  • the inorganic water blocking layer 102 is used to prevent water vapor from intruding from the PI layer.
  • the buffer layer 103 is used to prevent lower layer ions from being implanted into the active layer 111.
  • the material of the gate insulating layer 112 is not limited to SiNx, SiOxNy, SiOx, SiCxNy, ZnO, AlOx.
  • the first metal layer 200 can be continuously deposited by PVD, sputtering, evaporation, etc., and a gate mask is used to form the patterned first metal layer. Grid layer.
  • Step S430 deposit and form an interlayer dielectric layer on the first gate layer.
  • An interlayer dielectric layer 114 is deposited on the first gate layer, and an opening is provided in the interlayer dielectric layer 114.
  • step S440 deposit a second metal layer on the interlayer dielectric layer, and perform a patterning operation to form a source electrode and a drain electrode.
  • the structure of the source and drain is a stacked structure design of titanium/aluminum/titanium, which is not limited here.
  • step S450 coating a black matrix layer material on the source and drain electrodes, and performing exposure and development operations to form the black matrix layer, and make the black matrix layer completely cover the at least A first metal layer and the second metal layer.
  • the black matrix layer material is a black organic resin and a black inorganic film, wherein the black inorganic film can be a metal oxide or a metal sulfide, such as copper oxide, iron oxide, manganese dioxide, ferroferric oxide, molybdenum sulfide, copper sulfide Wait.
  • the black matrix layer 400 has the same pattern as the source and drain electrodes and the first gate layer, that is, the black matrix layer 400 not only covers The source and drain also cover the first gate layer.
  • the third embodiment of the present invention only one layer of black matrix layer 400 is coated, that is, one layer of black matrix layer 400 is provided, which can simplify the manufacturing process of the display panel 610 and improve It is efficient, and is conducive to reducing the thickness of the display panel and improving the yield.
  • Step S460 Disposing an organic flat layer on the black matrix layer.
  • step S470 deposit an anode on the organic flat layer and pattern it.
  • An anode 511 is deposited on the entire surface of the organic flat layer 411 and patterned.
  • the anode 511 is a transparent conductive electrode material and has a high hole injection capability, and indium tin oxide ITO is generally used.
  • Step S480 sequentially depositing corresponding electroluminescent materials and cathode materials on the anode to form an electroluminescent layer and a cathode respectively.
  • the electroluminescent material and the cathode material are sequentially deposited to form the electroluminescent layer 512 and the cathode, respectively.
  • an encapsulation layer may be covered on the cathode, and the encapsulation layer may be an alternately stacked structure of organic layers and inorganic layers.
  • the entire structure of the display panel 610 is coated on each metal layer by using the black matrix layer 400 material, and the pattern is completely consistent with the covered metal layer, it can effectively block the external light from the metal layer ( As the reflection on the electrode), the light emitted by the electroluminescent device and the reflected light from the outside may interfere with the external reflected light and affect the normal display of the display panel 610.
  • the black matrix layer 400 is provided to replace the polarizer structure in the display area above the camera, thereby greatly improving the external light transmittance and ensuring the normal operation of the camera.
  • the display panel of the present invention uses the black matrix layer material to completely overlap the metal layer (or metal wire) to replace the original polarizer structure design, and uses this design in the displayable area above the camera, thereby It solves the problem that the light transmittance caused by the polarizer is greatly reduced and the camera cannot work normally.
  • FIG. 6 is a schematic diagram of the structure of the display device in the fourth embodiment of the present invention.
  • a display device 600 is provided, and the display device includes the above-mentioned display panel 610.
  • the specific structure of the display panel 610 is as described above, and will not be repeated here.
  • the display device 600 may be any product or component with a display function, such as a liquid crystal television TV, a liquid crystal display device (such as a flexible display, a high-efficiency display), a mobile phone, a digital photo frame, a tablet computer, and the like.
  • an under-screen camera 620 is provided on the active area of the display panel 610, the position of which is shown in FIG. 6.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un panneau d'affichage (610) et son procédé de préparation. Dans le panneau d'affichage (610), un matériau de couche de matrice noire (400, 401) est utilisé pour recouvrir un fil métallique d'une manière complètement chevauchante, et une couche de polariseur sur la structure d'origine est retirée, ce qui permet non seulement de résoudre un effet de réflexion d'une couche métallique sur un substrat matriciel (100) sur une lumière externe de façon à assurer un affichage normal après qu'un dispositif électroluminescent émettes de la lumière, mais également capable d'augmenter la transmittance de la lumière externe en l'absence de la couche de polariseur de façon à assurer le fonctionnement normal d'une caméra sous-écran (620).
PCT/CN2019/107653 2019-03-28 2019-09-25 Panneau d'affichage et son procédé de préparation WO2020192051A1 (fr)

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CN201910245637.X 2019-03-28
CN201910245637.XA CN109979980A (zh) 2019-03-28 2019-03-28 显示面板及其制备方法、显示装置

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US11088327B2 (en) 2015-10-26 2021-08-10 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11581487B2 (en) 2017-04-26 2023-02-14 Oti Lumionics Inc. Patterned conductive coating for surface of an opto-electronic device
US11700747B2 (en) 2019-06-26 2023-07-11 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
US11730012B2 (en) 2019-03-07 2023-08-15 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11751415B2 (en) 2018-02-02 2023-09-05 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11832473B2 (en) 2019-06-26 2023-11-28 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics

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CN112242416A (zh) * 2019-07-19 2021-01-19 陕西坤同半导体科技有限公司 显示装置及电子设备
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CN110931538A (zh) * 2019-12-20 2020-03-27 武汉天马微电子有限公司 一种显示面板及电子设备
US11522031B2 (en) 2020-06-01 2022-12-06 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel, display device, and manufacturing method of display panel
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