WO2020166136A1 - 基板乾燥方法および基板処理装置 - Google Patents

基板乾燥方法および基板処理装置 Download PDF

Info

Publication number
WO2020166136A1
WO2020166136A1 PCT/JP2019/041171 JP2019041171W WO2020166136A1 WO 2020166136 A1 WO2020166136 A1 WO 2020166136A1 JP 2019041171 W JP2019041171 W JP 2019041171W WO 2020166136 A1 WO2020166136 A1 WO 2020166136A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
drying treatment
treatment liquid
liquid
concentration
Prior art date
Application number
PCT/JP2019/041171
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
正幸 尾辻
弘明 ▲高▼橋
加藤　雅彦
井上　一樹
直澄 藤原
学 奥谷
佑 山口
悠太 佐々木
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Publication of WO2020166136A1 publication Critical patent/WO2020166136A1/ja

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the substrate drying method includes a first liquid sending step of sending the stock solution in the stock solution tank to the outside of the stock solution tank by a first pump, and a pre-drying treatment solution containing the stock solution sent by the first pump.
  • the atmospheric pressure in the substrate processing apparatus 1 is maintained at the atmospheric pressure (for example, 1 atmospheric pressure or a value in the vicinity thereof) in the clean room in which the substrate processing apparatus 1 is installed, unless otherwise specified. ..
  • the pre-drying treatment liquid nozzle 39 is connected to a nozzle moving unit 42 that moves the pre-drying treatment liquid nozzle 39 in at least one of the vertical direction and the horizontal direction.
  • the nozzle moving unit 42 includes a processing position where the pre-drying treatment liquid ejected from the pre-drying treatment liquid nozzle 39 is supplied to the upper surface of the substrate W, and a position where the pre-drying treatment liquid nozzle 39 is located around the treatment cup 21 in a plan view.
  • the pre-drying treatment liquid nozzle 39 is horizontally moved between the standby position and the standby position.
  • FIG. 12 is a schematic diagram showing a pre-drying treatment liquid supply unit 100 according to the second embodiment of the present invention.
  • FIG. 13 shows a flow from the pre-drying treatment liquid nozzle 39 ejecting the pre-drying treatment liquid toward the pod 141 to the pre-drying treatment liquid nozzle 39 ejecting the pre-drying treatment liquid toward the substrate W. It is a flowchart.
  • FIG. 14 is a cross-sectional view showing a state in which the ejection port 39p of the pre-drying treatment liquid nozzle 39 is arranged in the liquid in the pod 141.
  • the pre-drying treatment liquid nozzle 39 is arranged in the central portion of the blocking member 51.
  • the pre-drying treatment liquid nozzle 39 is held by the blocking member 51 and moves up and down together with the blocking member 51.
  • the discharge port 39p of the pre-drying treatment liquid nozzle 39 is arranged above the upper central opening 61 that opens at the central portion of the lower surface 51L of the blocking member 51.
  • the upper gas pipe 56 (see FIG. 2) for guiding the inert gas is connected to the pre-drying treatment liquid nozzle 39.
  • the pre-drying treatment liquid in the pre-drying treatment liquid pipe 40 is pushed downstream by the diluting liquid toward the pre-drying treatment liquid nozzle 39.
  • the pre-drying treatment liquid nozzle 39 and the pre-drying treatment liquid pipe 40 have residual pre-drying treatment liquid discharged from the pre-drying treatment liquid nozzle 39.
  • the sublimation substance is deposited and the discharge port 39p of the pre-drying treatment liquid nozzle 39 is clogged with the solid of the sublimable substance. Such a phenomenon can be avoided by removing the residual pre-drying treatment liquid from the pre-drying treatment liquid nozzle 39.
  • the pre-drying treatment liquid ejected from the pre-drying treatment liquid nozzle 39 is supplied not to the upper surface of the substrate W but to the upper surface 12u of the spin base 12.
  • the control device 3 closes the second electric valve 108 and the pre-drying treatment liquid valve 41 to stop the supply of the diluent to the pre-drying treatment liquid pipe 40.
  • the liquid flows in the pre-drying treatment liquid pipe 40 regardless of whether or not the suck back valve 144 is operated.
  • the control device 3 operates the suck back valve 144 in a state where the insides of the pre-drying treatment liquid nozzle 39 and the pre-drying treatment liquid pipe 40 are filled with the diluting liquid
  • the suck back communicating with the internal space of the pre-drying treatment liquid pipe 40 is performed.
  • the internal space of the valve 144 expands, and the diluting liquid in the pre-drying treatment liquid nozzle 39 flows backward to the suck back valve 144.
  • the surface (liquid level) of the diluting liquid moves away from the ejection port 39p of the pre-drying treatment liquid nozzle 39.
  • the concentration of the diluting solution in the pre-drying treatment liquid may be equal to the concentration of the stock solution in the pre-drying treatment liquid, or may be lower than the concentration of the stock solution in the pre-drying treatment liquid.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2019/041171 2019-02-14 2019-10-18 基板乾燥方法および基板処理装置 WO2020166136A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019024815A JP7265879B2 (ja) 2019-02-14 2019-02-14 基板乾燥方法および基板処理装置
JP2019-024815 2019-02-14

Publications (1)

Publication Number Publication Date
WO2020166136A1 true WO2020166136A1 (ja) 2020-08-20

Family

ID=72044003

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/041171 WO2020166136A1 (ja) 2019-02-14 2019-10-18 基板乾燥方法および基板処理装置

Country Status (3)

Country Link
JP (1) JP7265879B2 (zh)
TW (1) TWI735060B (zh)
WO (1) WO2020166136A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023042736A1 (ja) * 2021-09-15 2023-03-23 セントラル硝子株式会社 基板の製造方法および昇華乾燥方法
JP2023046627A (ja) * 2021-09-24 2023-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法と基板処理装置と処理液

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002045805A (ja) * 2000-08-08 2002-02-12 Sony Corp 基板洗浄方法及び基板洗浄装置
JP2007242956A (ja) * 2006-03-09 2007-09-20 Toshiba Corp 半導体装置の製造方法
JP2008130835A (ja) * 2006-11-21 2008-06-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2010239013A (ja) * 2009-03-31 2010-10-21 Shibaura Mechatronics Corp 基板処理装置及び基板処理方法
JP2011029455A (ja) * 2009-07-27 2011-02-10 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
JP2013153062A (ja) * 2012-01-25 2013-08-08 Dainippon Screen Mfg Co Ltd 基板処理装置及びこれに用いられる液供給装置
JP2015046443A (ja) * 2013-08-27 2015-03-12 東京エレクトロン株式会社 液処理装置、濃度補正方法及び記憶媒体
JP2015119168A (ja) * 2013-11-13 2015-06-25 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP2017139279A (ja) * 2016-02-02 2017-08-10 株式会社東芝 基板乾燥装置、および基板処理システム
WO2018030516A1 (ja) * 2016-08-12 2018-02-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6444698B2 (ja) * 2014-11-17 2018-12-26 東芝メモリ株式会社 基板処理装置および基板処理方法
JP6502206B2 (ja) * 2015-08-07 2019-04-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6456793B2 (ja) * 2015-08-11 2019-01-23 東京エレクトロン株式会社 基板処理装置および昇華性物質の析出防止方法
JP6649146B2 (ja) * 2016-03-25 2020-02-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理システムおよび基板処理方法
JP6325067B2 (ja) * 2016-12-15 2018-05-16 東京エレクトロン株式会社 基板乾燥方法及び基板処理装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002045805A (ja) * 2000-08-08 2002-02-12 Sony Corp 基板洗浄方法及び基板洗浄装置
JP2007242956A (ja) * 2006-03-09 2007-09-20 Toshiba Corp 半導体装置の製造方法
JP2008130835A (ja) * 2006-11-21 2008-06-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2010239013A (ja) * 2009-03-31 2010-10-21 Shibaura Mechatronics Corp 基板処理装置及び基板処理方法
JP2011029455A (ja) * 2009-07-27 2011-02-10 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
JP2013153062A (ja) * 2012-01-25 2013-08-08 Dainippon Screen Mfg Co Ltd 基板処理装置及びこれに用いられる液供給装置
JP2015046443A (ja) * 2013-08-27 2015-03-12 東京エレクトロン株式会社 液処理装置、濃度補正方法及び記憶媒体
JP2015119168A (ja) * 2013-11-13 2015-06-25 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP2017139279A (ja) * 2016-02-02 2017-08-10 株式会社東芝 基板乾燥装置、および基板処理システム
WO2018030516A1 (ja) * 2016-08-12 2018-02-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体

Also Published As

Publication number Publication date
TW202030787A (zh) 2020-08-16
JP2020136355A (ja) 2020-08-31
TWI735060B (zh) 2021-08-01
JP7265879B2 (ja) 2023-04-27

Similar Documents

Publication Publication Date Title
JP7286359B2 (ja) 基板処理方法、基板処理装置、および乾燥前処理液
TWI738102B (zh) 基板乾燥方法及基板處理裝置
KR102611130B1 (ko) 승화성 물질 함유액의 제조 방법, 기판 건조 방법, 및 기판 처리 장치
TWI774317B (zh) 藥液生成方法、藥液生成裝置及基板處理裝置
CN110660641B (zh) 衬底处理方法及衬底处理装置
US20210159095A1 (en) Substrate processing apparatus and substrate processing method
WO2020166136A1 (ja) 基板乾燥方法および基板処理装置
TWI753816B (zh) 基板處理方法
KR102412306B1 (ko) 기판 처리방법 및 기판 처리장치
JP7176936B2 (ja) 基板処理方法および基板処理装置
JP7314373B2 (ja) 基板処理方法および基板処理装置
JP7300272B2 (ja) 基板処理方法および基板処理装置
JP2024078250A (ja) 基板処理方法および基板処理装置
WO2020039835A1 (ja) 基板処理方法および基板処理装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19914896

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19914896

Country of ref document: EP

Kind code of ref document: A1