WO2020151495A1 - 蒸镀结构、蒸镀装置、蒸镀系统及蒸镀结构的使用方法 - Google Patents

蒸镀结构、蒸镀装置、蒸镀系统及蒸镀结构的使用方法 Download PDF

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Publication number
WO2020151495A1
WO2020151495A1 PCT/CN2020/071013 CN2020071013W WO2020151495A1 WO 2020151495 A1 WO2020151495 A1 WO 2020151495A1 CN 2020071013 W CN2020071013 W CN 2020071013W WO 2020151495 A1 WO2020151495 A1 WO 2020151495A1
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WIPO (PCT)
Prior art keywords
evaporation
plate
vapor deposition
source material
floating plate
Prior art date
Application number
PCT/CN2020/071013
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English (en)
French (fr)
Inventor
饶勇
李有亮
刘金彪
谭瑞
岳小非
罗楠
胡斌
仪修超
沈萌
加新星
肖鹏
李靖
晋亚杰
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/959,196 priority Critical patent/US20210214840A1/en
Publication of WO2020151495A1 publication Critical patent/WO2020151495A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs

Definitions

  • the present disclosure relates to the field of display technology, in particular to an evaporation structure, an evaporation device, an evaporation system, and a method of using the evaporation structure.
  • the film layer is often prepared by an evaporation method.
  • the evaporation method mainly uses an evaporation structure to spray evaporation source materials to the substrate to be evaporated to form a film layer on the substrate to be evaporated.
  • the vapor deposition structure usually includes: a vapor deposition crucible, and a nozzle located at the exit of the vapor deposition crucible.
  • the realization process of this evaporation method is: placing a solid or liquid evaporation source material in an evaporation crucible, and heating the evaporation source material by means of resistance heating, etc., so that the state of the evaporation source material becomes
  • the vapor deposition crucible is controlled to move from one end of the substrate to be vaporized to the other end, and the nozzle is controlled to spray vapor deposition source material on the surface of the substrate to be vaporized during the movement, so that the vapor deposition source material is deposited on the substrate to be vaporized. Plate the surface of the substrate.
  • the present disclosure provides an evaporation structure, an evaporation device, an evaporation system, and a method of using the evaporation structure.
  • the technical solutions are as follows:
  • an evaporation structure comprising: an evaporation crucible, a nozzle and a floating plate,
  • the evaporation crucible is used to hold the evaporation source material, and the state of the evaporation source material changes from liquid to gas after being heated;
  • the nozzle is arranged at the outlet of the evaporation crucible, and the nozzle is used to spray the evaporation source material in a gaseous state onto the surface of the substrate to be evaporated;
  • the floating plate is configured to float on the surface of the vapor deposition source material in a liquid state.
  • the floating plate has a plurality of hollow structures, and the plurality of hollow structures are configured to supply the vapor deposition source in a gas state. Material passed.
  • the floating plate is a hollow plate structure.
  • the floating plate includes: a plurality of connecting cylinders, a back plate and a cover plate arranged oppositely, the back plate has a plurality of first through holes, and the cover plate has a connection with the plurality of first through holes.
  • a plurality of second through holes in one-to-one correspondence;
  • a connecting cylinder is sealedly connected to the back plate at a first through hole, and is sealed to the cover plate at a second through hole corresponding to the one first through hole to obtain the hollow structure;
  • the back plate is at the edge of the back plate and at a position where the first through hole is not provided, and is in sealed connection with the cover plate at the edge of the cover plate and at a position where the second through hole is not provided , Get a closed cavity.
  • the back plate and the cover plate are both curved plate-shaped structures
  • one of the back plate and the cover plate is a curved plate-like structure, and the other is a flat plate-like structure;
  • the back plate and the cover plate are both flat plate-like structures.
  • the floating plate further includes: a connecting plate, the back plate is at the edge of the back plate and the position where the first through hole is not provided, and the cover plate is at the edge of the cover plate without The position where the second through hole is provided is sealed and connected by the connecting plate.
  • the floating plate is a solid plate structure.
  • the density of the floating plate is less than the density of the evaporation source material in a liquid state.
  • the material of the floating plate is a thermally conductive material.
  • the surface of the floating plate used to contact the evaporation source material is provided with a thermally conductive material layer.
  • the plurality of hollow structures are evenly distributed on the surface of the floating plate
  • the floating plate has multiple regions, and the distribution densities of the hollow structures in different regions are different.
  • the floating plate has a plurality of regions, and the opening sizes of the hollow structures in different regions are different.
  • the distribution density of the plurality of hollow structures increases as the distance between the hollow structures and the edge of the floating plate increases.
  • the opening size of the plurality of hollow structures increases as the distance between the hollow structure and the edge of the floating plate increases.
  • the vapor deposition structure further includes: a connecting plate, the floating plate is a hollow plate-shaped structure, the material of the floating plate is a thermally conductive material, and the floating plate includes: a plurality of connecting cylinders arranged oppositely The back plate and the cover plate, the back plate has a plurality of first through holes, and the cover plate has a plurality of second through holes corresponding to the plurality of first through holes one-to-one;
  • a connecting cylinder is sealedly connected to the back plate at a first through hole, and is sealed to the cover plate at a second through hole corresponding to the one first through hole to obtain the hollow structure;
  • the back plate and the cover plate are both flat plate-like structures, and the back plate is at the edge of the back plate and at a position where the first through hole is not provided, and the cover plate is in the cover plate. Where the second through-hole is not provided at the edge of, is connected through the connecting plate to obtain a sealed cavity;
  • the floating plate has multiple regions, the distribution density of the hollow structure in different regions is different, and the opening size of the hollow structure in different regions is different.
  • an evaporation device in another aspect, includes: a carrying tank and at least one evaporation structure.
  • the evaporation structure includes an evaporation crucible, a nozzle, and a floating plate.
  • the evaporation crucible is used to hold the evaporation source material, and the state of the evaporation source material changes from liquid to gas after being heated;
  • the nozzle is arranged at the outlet of the evaporation crucible, and the nozzle is used to spray the evaporation source material in a gaseous state onto the surface of the substrate to be evaporated;
  • the floating plate is configured to float on the surface of the evaporation source material in a liquid state, the floating plate has a plurality of hollow structures, and the plurality of hollow structures are configured to supply the vapor deposition in a gas state.
  • the source material passes.
  • an evaporation system in yet another aspect, includes: an evaporation chamber, and an evaporation device located inside the evaporation chamber, and the evaporation device is any one of the aforementioned evaporation devices. Device.
  • a method for using an evaporation structure includes: an evaporation crucible, a nozzle, and a floating plate, and the method includes:
  • the floating plate is configured to float on the surface of the evaporation source material in a liquid state
  • the floating plate has a plurality of hollow structures, and the plurality of hollow structures are configured to supply the gaseous The evaporation source material passes.
  • Fig. 1 is a schematic structural diagram of an evaporation structure in a related technology
  • FIG. 2 is a schematic structural diagram of an evaporation structure provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of another vapor deposition structure provided by an embodiment of the present disclosure.
  • Fig. 4 is a schematic structural diagram of an evaporation structure in another related technology
  • Figure 5 is a top view of a floating plate provided by an embodiment of the present disclosure.
  • Fig. 6 is a schematic structural diagram of another vapor deposition structure provided by an embodiment of the present disclosure.
  • Fig. 7 is a top view of another floating plate provided by an embodiment of the present disclosure.
  • Figure 8 is a top view of another floating plate provided by an embodiment of the present disclosure.
  • FIG. 9 is a schematic cross-sectional view of a floating plate provided by an embodiment of the present disclosure.
  • FIG. 10 is a schematic cross-sectional view of another floating plate provided by an embodiment of the present disclosure.
  • FIG. 11 is a schematic cross-sectional view of still another floating plate provided by an embodiment of the present disclosure.
  • FIG. 12 is a schematic cross-sectional view of another floating plate provided by an embodiment of the present disclosure.
  • FIG. 13 is a schematic cross-sectional view of still another floating plate provided by an embodiment of the present disclosure.
  • FIG. 14 is a flowchart of a method of using an evaporation structure provided by an embodiment of the present disclosure
  • FIG. 15 is a schematic structural diagram of an evaporation device provided by an embodiment of the present disclosure.
  • Fig. 16 is a schematic structural diagram of an evaporation system provided by an embodiment of the present disclosure.
  • the vapor deposition source material in a liquid state in the vapor deposition crucible has the same liquid level at different positions; and when the vapor deposition structure moves, under the action of inertia, the vapor deposition source material is liquid.
  • the plating source material will slosh in the evaporation crucible, resulting in different liquid level of the evaporation source material at different positions in the evaporation crucible.
  • Figure 1 please refer to Figure 1.
  • the liquid level of the evaporation source material L near the left inner wall of the evaporation crucible 01 has a height h1 greater than The liquid surface height h2 of the vapor deposition source material L in a liquid state near the inner wall on the right side of the vapor deposition crucible 01.
  • the pressure distribution of the vapor deposition source material in the vapor state in the vapor deposition crucible will be uneven, and different nozzles are more likely to appear 02
  • the pressure of the vapor deposition source material in the gaseous state at the entrance is different.
  • the nozzle 02 sprays more vapor deposition source material on the surface of the substrate (not shown in FIG. 1) to be vapor deposited per unit time, correspondingly, The thicker the evaporation source material deposited on the substrate to be evaporated. Therefore, when the pressure of the vapor deposition source material in the gaseous state at the entrance of different nozzles 02 is different, the thickness of the vapor deposition source material formed on the substrate to be vaporized is more likely to be different, resulting in formation on the substrate to be vaporized. The uniformity of the film layer is poor.
  • the embodiments of the present disclosure provide an evaporation structure, which can reduce the amplitude of the evaporation source material in a liquid state in the evaporation crucible when the evaporation structure moves, and can effectively improve the film formed on the substrate to be evaporated. Uniformity of the layer.
  • FIG. 2 is a schematic structural diagram of an evaporation structure provided by an embodiment of the disclosure.
  • the evaporation structure 1 may include: an evaporation crucible 11, a nozzle 12 and a floating plate 13.
  • the evaporation crucible 11 is used to hold the evaporation source material, and the state of the evaporation source material changes from liquid to gas after being heated.
  • the evaporation source material may be in a liquid state when it is not heated (that is, in a normal temperature state), and may be in a gas state after being heated.
  • the evaporation source material can be in a solid state when it is not heated. When heated, it first changes from a solid state to a liquid state, and then from a liquid state to a gas state. At this time, the evaporation source material can be referred to as a melted vapor state.
  • Plating source material is used to hold the evaporation source material, and the state of the evaporation source material changes from liquid to gas after being heated.
  • the evaporation source material may be in a liquid state when it is not heated (that is, in a normal temperature state), and may be in a gas state after being heated.
  • the evaporation source material
  • the nozzle 12 is arranged at the exit of the evaporation crucible 11, and the nozzle 12 is used to spray a vapor deposition source material on the surface of the substrate to be evaporated.
  • the floating plate 13 is arranged to float on the surface of the vapor deposition source material 14 in a liquid state. At this time, there is a gap between the floating plate 13 and the inner wall of the vapor deposition crucible 11.
  • the floating plate 13 has a plurality of hollow structures 130, and the plurality of hollow structures 130 are configured to allow the vapor deposition source material in a gas state to pass.
  • the vapor deposition source material in a gaseous state can reach the nozzle 12 after passing through a plurality of hollow structures, so that the nozzle 12 can spray the vapor deposition source material in a gas state to the surface of the substrate to be vaporized to form a film layer on the substrate to be vaporized.
  • the vapor deposition structure provided by the embodiments of the present disclosure, by floating the floating plate on the surface of the vapor deposition source material in a liquid state, increases the need to cause the vapor deposition source material in a liquid state to shake in the vapor deposition crucible.
  • the power of the same amount of power reduces the sloshing amplitude of the vapor deposition source material in the vapor deposition crucible in the liquid state under the same power; and there is a gap between the floating plate and the inner wall of the vapor deposition crucible, so that the floating plate and the vapor deposition
  • the inner wall of the crucible can collide and generate a force that is opposite to the shaking direction of the vapor deposition source material in a liquid state.
  • This opposite force can weaken the shaking amplitude of the vapor deposition source material in a liquid state in the vapor deposition crucible, compared with the related Technology reduces the height difference of the liquid level at different positions in the evaporation crucible, reduces the pressure difference at the entrance of different nozzles, and increases the amount of evaporation source material sprayed from different nozzles to the surface of the substrate to be evaporated The uniformity of, thereby improving the uniformity of the film formed on the substrate to be evaporated.
  • the floating plate 13 floats on the surface of the evaporation source material 14 in a liquid state, it can be determined that there is a gap between the floating plate 13 and the inner wall of the evaporation crucible 11.
  • the vapor deposition structure 1 moves horizontally to the right, the force that causes the liquid vapor deposition source material 14 to slosh horizontally to the left. Under the horizontal leftward force, it floats on The floating plate 13 on the surface of the vapor deposition source material 14 in a liquid state also moves to the left, and the floating plate 13 will hit the left inner wall of the vapor deposition crucible 11.
  • the floating plate 13 When the floating plate 13 hits the left inner wall of the evaporation crucible 11, the floating plate 13 receives a horizontal rightward force, and moves horizontally to the right under the horizontal rightward force. When the floating plate 13 moves horizontally to the right, since the floating plate 13 contacts the surface of the vapor deposition source material 14 in a liquid state, the floating plate 13 applies a horizontal rightward friction force to the vapor deposition source material 14 in a liquid state. In addition, since part of the vapor deposition source material 14 in a liquid state will be immersed in the void enclosed by the hollow structure 130 of the floating plate 13, the floating plate 13 will apply a horizontal rightward reaction to the part of the vapor deposition source material 14 in a liquid state. To force.
  • the friction force and the reverse force can be compared with the vapor deposition source material 14 in a liquid state.
  • the shaking force of the plating source material 14 is partially offset, and therefore, the shaking amplitude of the vapor deposition source material 14 in a liquid state can be reduced.
  • the width of the gap between the floating plate 13 and the inner wall of the evaporation crucible 11 is set according to application requirements.
  • the width of the gap between the floating plate 13 and the inner wall of the evaporation crucible 11 may be smaller than the reference width, so that when the evaporation source material 14 in a liquid state shakes to a small extent inside the evaporation crucible 11, the floating plate 13 It can collide with the inner wall of the vapor deposition crucible 11 and increase the sensitivity of the floating plate 13 to the reaction force generated by the vapor deposition source material 14.
  • the pressure of the vapor deposition source material in the vapor deposition crucible is higher than the pressure of the vapor deposition source material outside the vapor deposition crucible, so that the vapor deposition source material in the vapor deposition crucible is
  • the evaporation source material can autonomously be sprayed from the nozzle to the surface of the substrate to be evaporated under the action of the pressure difference.
  • the nozzle may be provided with a pressurizing component.
  • the vapor deposition source material in a gaseous state at the nozzle can be pressurized by the pressurizing component to spray the vapor deposition source material in a gaseous state onto the surface of the substrate to be vaporized.
  • heating the evaporation source material can have multiple achievable ways.
  • the evaporation crucible can have a heating function.
  • the evaporation crucible can directly heat the evaporation source material.
  • a heating device can be used to heat the evaporation source material.
  • the heating device may be a vapor deposition crucible heating, and the vapor deposition crucible transfers the received heat to the vapor deposition source material, so that the state of the vapor deposition source material becomes gaseous after being heated.
  • the material of the floating plate may be a thermally conductive material with thermal conductivity.
  • the material of the floating plate can be metal or a composite thermally conductive material with thermal conductivity (such as graphene or thermally conductive silicone grease, etc.).
  • the evaporation source material close to the inner wall of the evaporation crucible 11 can transfer part of the heat to the floating plate 13.
  • the heat transferred to the floating plate 13 can be transferred to the evaporation source material at a position far away from the inner wall of the evaporation crucible through the floating plate 13.
  • the thermal conductivity of the material of the floating plate 13 is higher than the thermal conductivity of the evaporation source material, more heat can be transferred to the evaporation source material at a position farther from the inner wall of the evaporation crucible. Therefore, the vapor deposition source material at a position far away from the inner wall of the vapor deposition crucible can have a higher temperature, and the vapor deposition source material at a position far away from the inner wall of the vapor deposition crucible and close to the vapor deposition crucible can be reduced.
  • the temperature difference of the evaporation source material on the inner wall improves the uniformity of the evaporation source material in the evaporation pot, so that the evaporation source material at different positions of the evaporation crucible changes from liquid to gas at a relatively close rate. Further reduce the pressure difference between vapor deposition source materials at the entrance of different nozzles.
  • the surface of the floating plate 13 for contacting the evaporation source material 14 may be provided with a thermally conductive material layer.
  • the thermally conductive material layer can transfer heat between the evaporation source materials at different positions, and can further reduce the pressure difference between the gaseous evaporation source materials at the entrances of different nozzles.
  • the thermally conductive material layer may be a film layer made of a thermally conductive material, or the thermally conductive material layer may be a thermally conductive silicone cloth or a thermally conductive tape.
  • the material of the floating plate 13 may be a thermally conductive material or a non-thermally conductive material, which is not specifically limited in the embodiment of the present disclosure.
  • the nozzle 12 may include: a nozzle seat 121 and a nozzle head 122.
  • the nozzle seat 121 is arranged at the outlet of the evaporation crucible
  • the nozzle head 122 is arranged on the nozzle seat 121
  • the nozzle head 122 is used to spray vapor deposition source material in a gaseous state onto the surface of the substrate 15 to be evaporated.
  • the nozzle base 121 is detachably connected to the evaporation crucible.
  • the connection between the nozzle holder 121 and the evaporation crucible may be a snap connection.
  • the floating plate since the floating plate has a plurality of hollow structures 130, when the vapor deposition source material in gaseous state flows out from the end of the hollow structure 130 near the nozzle, the flow trajectory of the vapor deposition source material in gas state is no longer In the related art, it flows in a vertical upward direction (as shown in FIG. 4), but flows in a divergent shape at the exit of the hollow structure 130 (as shown in FIG. 3), that is, its flow trajectory can satisfy the Knudsen distribution.
  • vapor deposition source materials in gaseous form flowing out of different hollow structures 130 can be mixed with each other, and the mixed vapor deposition source materials can exchange heat, which further improves the uniformity of the temperature in the evaporation crucible and reduces The pressure difference at the inlet of different nozzles is calculated.
  • multiple hollow structures can be evenly distributed on the surface of the floating plate.
  • a plurality of hollow structures 130 are evenly distributed on the surface of the floating plate.
  • the amount of vapor deposition source material passing through each hollow structure 130 is substantially the same.
  • a plurality of hollow structures may be unevenly distributed on the surface of the floating plate.
  • the floating plate may have multiple regions, the distribution density of the hollow structures 130 in different regions is different, and/or the opening sizes of the hollow structures 130 in different regions are different.
  • FIG. 7 is a schematic top view of the floating plate in FIG. 6.
  • the distribution density of the hollow structure 130 in the region Q4 near the inner wall of the evaporation crucible (not shown) is smaller than that of the inner wall of the evaporation crucible.
  • the opening size of the hollow structure 130 in the region near the inner wall of the evaporation crucible in the floating plate 13 may be smaller than The size of the opening of the hollow structure 130 in the area farther from the inner wall of the evaporation crucible.
  • the opening size of the hollow structure 130 in the region Q6 near the inner wall of the evaporation crucible (not shown) is smaller than the opening size of the hollow structure 130 in the region Q7 farther from the inner wall of the evaporation crucible. That is, the aperture ratio of the region Q6 close to the inner wall of the vapor deposition crucible is smaller than the aperture ratio of the region Q7 farther from the inner wall of the vapor deposition crucible.
  • the distribution density and/or opening size of the hollow structure can increase as the distance between the hollow structure and the edge of the floating plate increases.
  • the distribution density and/or opening size of the hollow structure can be used to balance the gaseous gas that reaches different positions caused by the uneven heating of the evaporation source material.
  • the unevenness of the amount of evaporation source material makes the amount of gaseous evaporation source material flowing out of the hollow structure 130 at different positions and reaching the nozzle inlet (not shown) as equal as possible, so that different nozzles per unit time
  • the amount of the evaporation source material sprayed on the surface of the substrate to be evaporated is also as equal as possible, thereby improving the uniformity of the thickness of the film layer formed on the substrate to be evaporated.
  • the vapor deposition source material in a gas state between the floating plate and the surface of the vapor deposition source material in a liquid state can be recycled to the hollow structure 130 with a larger opening.
  • the amount of vapor deposition source material flowing out of the hollow structure 130 with a larger opening and reaching the nozzle inlet is increased, and the amount of vapor deposition source material located at the inlet of different nozzles is further reduced.
  • the pressure difference of the gaseous vapor deposition source material is further reduced.
  • the circumscribed figure of the cross-section of the multiple hollow structures on the floating plate in the extending direction of the floating plate may be circular, rectangular, or triangular, which is not limited in the embodiment of the present disclosure.
  • Fig. 5, Fig. 7 and Fig. 8 are schematic diagrams in which the circumscribed figures of the cross-section of the multiple hollow structures in the extending direction of the floating plate are circular.
  • the floating plate 13 may be a solid plate structure or a hollow plate structure.
  • the density of the floating plate 13 is less than the density of the vapor deposition source material 14 in a liquid state to ensure that the floating plate 13 can float on the surface of the vapor deposition source material 14 in a liquid state.
  • the floating plate may be made of a material capable of floating the floating plate on the surface of the evaporation source material in a liquid state, such as resin or titanium alloy.
  • the manufacturing process of the floating plate 13 is relatively simple. For example, when manufacturing the floating plate, a punching tool may be directly used to punch holes on the pre-formed plate-shaped structure to form a plurality of hollow structures 130 on the floating plate 13.
  • the floating plate 13 may include: a plurality of connecting cylinders 131, a back plate 133 and a cover plate 132 arranged oppositely.
  • the back plate 133 has a plurality of first through holes C1
  • the cover plate 132 has a plurality of second through holes C2 corresponding to the plurality of first through holes C1 one-to-one.
  • one of the back plate 133 and the cover plate 132 is in contact with the surface of the vapor deposition source material in a liquid state.
  • the embodiment of the present disclosure is described by taking the back plate 133 and the surface of the vapor deposition source material in a liquid state as an example.
  • any one of the connecting cylinders 131 can be sealed to the back plate 133 at a first through hole C1, and sealed to the cover plate 132 at a second through hole C2 corresponding to a first through hole C1 Connect to get a hollow structure (not shown).
  • a hollow structure (not shown).
  • the back plate 133 can be sealedly connected to the cover plate 132 at the edge of the back plate 133 where the first through hole C1 is not provided, so as to obtain A closed cavity surrounded by the back plate 133, the cover plate 132 and a plurality of connecting cylinders 131.
  • the edge of the back plate 133 where the first through hole C1 is not provided may be any position in the edge area of the back plate 133
  • the edge of the cover plate 132 where the second through hole C2 is not provided may be a cover. Any position in the edge area of the board 132.
  • the sealed connection between the connecting cylinder 131 and the back plate 133, and the sealed connection between the connecting cylinder 131 and the cover plate 132 may both be detachable connection or non-detachable connection.
  • the detachable connection may be a snap connection or an adhesive connection or the like.
  • the non-detachable connection may be welding or the like.
  • the back plate 133 and the cover plate 132 may both be flat plate-like structures.
  • the floating plate 13 may also include a connecting plate 134, and the back plate 133 and the cover plate 132 can also pass through The connecting plate 134 is connected.
  • the edge of the back plate 133 and the position where the first through hole C1 is not provided pass through the edge of the connecting plate 134 and the cover plate 132 and The position where the second through hole C2 is not provided is hermetically connected.
  • the sealing connection between the connecting plate 134 and the back plate 133, and the sealing connection between the connecting plate 134 and the cover plate 132 may both be detachable or non-detachable.
  • the detachable connection may be a snap connection or an adhesive connection.
  • the non-detachable connection may be welding or the like.
  • the back plate 133 and the cover plate 132 may both have a curved plate-like structure. At this time, the back plate 133 and the cover plate 132 may be directly connected or connected through a connecting plate 134.
  • the side of the back plate 133 facing the connecting cylinder may be concave, and the side of the cover plate 132 facing the connecting cylinder may be convex.
  • the edge of the back plate 133 is not provided with the first through hole C1. It is directly sealed and connected to the edge of the cover plate 132 where the second through hole C2 is not provided to form a floating plate.
  • connection between the back plate 133 and the cover plate 132 may be a snap connection or an adhesive connection.
  • connection method of the back plate 133 and the cover plate 132 may also be welding.
  • the side of the back plate 133 facing the connecting cylinder may be concave, and the side of the cover plate 132 facing the connecting cylinder may be convex.
  • the edge of the back plate 133 where the first through hole C1 is not provided and the edge of the cover plate 132 where the second through hole C2 is not provided are hermetically connected by the connecting plate 134.
  • the edge of the back plate 133 and the position where the first through hole C1 is not provided is hermetically connected to one end of the connecting plate 134, and the other end of the connecting plate 134 is hermetically connected to the edge of the cover plate 132 where the second through hole C2 is not provided.
  • one of the back plate 133 and the cover plate 132 has a curved plate-shaped structure, and the other has a flat plate-shaped structure. At this time, the back plate 133 and the cover plate 132 may be directly connected or connected through a connecting plate 134.
  • the back plate 133 has a flat plate-like structure
  • the cover plate 132 has a curved plate-like structure
  • the side of the cover plate 132 facing the connecting cylinder may be convex.
  • the back plate 133 is not provided with the first through hole C1. It is directly and sealedly connected with the cover plate 132 where the second through hole C2 is not provided.
  • connection between the back plate 133 and the cover plate 132 may be a snap connection or an adhesive connection.
  • connection method of the back plate 133 and the cover plate 132 may also be welding.
  • the back plate 133 has a flat plate structure
  • the cover plate 132 has a curved plate structure
  • the surface of the cover plate 132 facing the connecting cylinder may be convex.
  • the position where the back plate 133 is not provided with the first through hole C1 and the position where the cover plate 132 is not provided with the second through hole C2 are hermetically connected by the connecting plate 134.
  • the position of the back plate 133 where the first through hole C1 is not provided is hermetically connected to one end of the connecting plate 134, and the other end of the connecting plate 134 is hermetically connected to the position of the cover plate 132 where the second through hole C2 is not provided.
  • the vapor deposition structure provided by the embodiments of the present disclosure, by floating the floating plate on the surface of the vapor deposition source material in a liquid state, increases the need to cause the vapor deposition source material in a liquid state to shake in the vapor deposition crucible.
  • the power of the same amount of power reduces the sloshing amplitude of the vapor deposition source material in the vapor deposition crucible in the liquid state under the same power; and there is a gap between the floating plate and the inner wall of the vapor deposition crucible, so that the floating plate and the vapor deposition
  • the inner wall of the crucible can collide and generate a force opposite to the sloshing direction of the vapor deposition source material in a liquid state.
  • This opposite force can weaken the sloshing amplitude of the vapor deposition source material in a liquid state in the vapor deposition crucible.
  • Technology reduces the height difference of the liquid level at different positions in the evaporation crucible, reduces the pressure difference at the entrance of different nozzles, and increases the amount of evaporation source material sprayed from different nozzles to the surface of the substrate to be evaporated The uniformity of, thereby improving the uniformity of the film formed on the substrate to be evaporated.
  • FIG. 14 is a flowchart of a method of using an evaporation structure provided by an embodiment of the disclosure.
  • the vapor deposition structure may be any vapor deposition structure in the foregoing embodiments, and the method of using the vapor deposition structure may include:
  • Step 1301 Put the evaporation source material and the floating plate into the evaporation crucible in sequence.
  • Step 1302 Install the nozzle at the outlet of the evaporation crucible.
  • Step 1303 heating the vapor deposition source material so that the state of the vapor deposition source material changes from liquid to gas after being heated, and spraying the vapor deposition source material in a gaseous state from the nozzle to the surface of the substrate to be vaporized.
  • the floating plate is configured to float on the surface of the evaporation source material in a liquid state, and there is a gap between the floating plate and the inner wall of the evaporation crucible, the floating plate has multiple hollow structures, and the multiple hollow structures are configured as: For the vapor deposition source material in a gaseous state to pass.
  • the vapor deposition structure includes a plurality of vapor deposition crucibles
  • different vapor deposition crucibles can be filled with different vapor deposition materials to form different film layers on the vapor deposition substrate.
  • the evaporation crucible can be controlled to move from one end of the substrate to be evaporated to the other end, and at the same time, the nozzles on different evaporation crucibles can be controlled to spray vapor deposition source materials on the surface of the substrate to be evaporated. Different film layers are formed on the surface of the substrate.
  • the method for using the vapor deposition structure is to put the vapor deposition source material and the floating plate into the vapor deposition crucible in sequence. Since the floating plate floats on the surface of the vapor deposition source material in a liquid state, the The floating plate increases the power required to cause the evaporation source material in a liquid state to shake in the evaporation crucible, and reduces the shaking amplitude of the evaporation source material in a liquid state in the evaporation crucible under the same power; And because there is a gap between the floating plate and the inner wall of the evaporation crucible, the floating plate and the inner wall of the evaporation crucible can collide and generate a force opposite to the shaking direction of the evaporation source material in a liquid state.
  • This opposite force can The sloshing amplitude of the vapor deposition source material in a liquid state in the vapor deposition crucible is reduced.
  • the height difference of the liquid level at different positions in the vapor deposition crucible is reduced, and the pressure at the entrance of different nozzles is reduced.
  • the difference is that the uniformity of the amount of evaporation source material sprayed from different nozzles to the surface of the substrate to be vaporized is improved, thereby improving the uniformity of the film layer formed on the substrate to be vaporized.
  • FIG. 15 is a schematic structural diagram of an evaporation device provided by an embodiment of the disclosure.
  • the vapor deposition device Z may include: a carrying tank 2 and at least one vapor deposition structure 1, and when the vapor deposition device Z includes: a plurality of vapor deposition structures 1, the vapor deposition device Z further includes: At least one partition 3 between every two evaporation crucibles 11.
  • FIG. 15 is a schematic diagram of an evaporation device including one evaporation structure 1 and two partitions 3, and one evaporation structure 1 includes three evaporation crucibles 11.
  • the inner wall of the carrying tank 2 has a groove, and a heating device (not shown) for heating the evaporation structure 1 and the at least one partition 3 is embedded in the groove.
  • the heating device may be a resistance wire.
  • current may be provided to the heating device so that the heating device heats the evaporation structure 1 and the at least one partition 3.
  • the vapor deposition device Z includes a plurality of vapor deposition structures 1, the plurality of vapor deposition structures 1 are sequentially arranged in the supporting groove 2 along the extending direction of the supporting groove 2, and the plurality of vapor deposition structures 1 may be provided by the embodiments of the present disclosure Any evaporation structure 1.
  • At least one partition 3 is fixedly connected to the inner wall of the carrying tank and is in contact with the outer wall of the evaporation crucible 11 in the evaporation structure 1.
  • the at least one partition 3 is used to separate two adjacent evaporation crucibles 11, And heating the evaporation crucible 11 in contact with the at least one partition 3.
  • the evaporation system may include an evaporation chamber T, and an evaporation device Z, a power device D, and a detection device J located inside the evaporation chamber T.
  • the power device is fixedly connected with the carrying tank in the vapor deposition device, and the power device is used to drive the vapor deposition device to move in the vapor deposition chamber to vaporize the substrate to be vaporized.
  • the detection device is fixedly connected with the power device, and the detection device is used to detect the flow rate of the vapor deposition source material in the vapor deposition chamber, and feedback the flow rate information to the power device for the power device to adjust according to the flow rate The rate of movement of the power plant.
  • the detection device may be a quartz crystal microbalance (English: Quartz Crystal Microbalance; QCM for short). When the nozzle sprays the vapor deposition source material in the vapor state into the vapor deposition chamber, the vapor deposition source material in the vapor state will fall on the surface of the quartz crystal microbalance, and the quartz crystal microbalance can detect the vapor deposition on its surface.
  • the quality of the evaporation source material and output an electrical signal with a certain frequency through the quartz crystal oscillator circuit according to the detected quality, so that other auxiliary equipment such as computers can obtain the detected quality according to the electrical signal, and determine it according to the quality
  • the flow rate of vapor deposition source material in the vapor deposition chamber The flow rate of vapor deposition source material in the vapor deposition chamber.
  • the evaporation system provided by the embodiments of the present disclosure includes an evaporation structure, and the evaporation structure includes a floating plate.
  • the evaporation structure includes a floating plate.
  • the sloshing amplitude of the evaporation source material in the evaporation crucible and because there is a gap between the floating plate and the inner wall of the evaporation crucible, the floating plate and the inner wall of the evaporation crucible can collide, and produce a liquid vapor deposition
  • the sloshing force of the source material in the opposite direction can weaken the sloshing amplitude of the evaporation source material in the liquid state in the evaporation crucible. Compared with the related technology, it reduces the liquid level at different positions in the evaporation crucible.
  • the height difference reduces the pressure difference at the entrances of different nozzles, improves the uniformity of the amount of evaporation source material sprayed from different nozzles to the surface of the substrate to be vaporized, and thereby improves the formation on the substrate to be vaporized.
  • the uniformity of the film reduces the pressure difference at the entrances of different nozzles, improves the uniformity of the amount of evaporation source material sprayed from different nozzles to the surface of the substrate to be vaporized, and thereby improves the formation on the substrate to be vaporized.
  • the uniformity of the film reduces the pressure difference at the entrances of different nozzles, improves the uniformity of the amount of evaporation source material sprayed from different nozzles to the surface of the substrate to be vaporized, and thereby improves the formation on the substrate to be vaporized.

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Abstract

一种蒸镀结构（1）、蒸镀装置（Z）、蒸镀系统及蒸镀结构的使用方法，属于显示技术领域。蒸镀结构（1）包括：蒸镀坩埚（11）、喷嘴（12）和浮板（13），蒸镀坩埚（11）用于盛放蒸镀源材料（14），蒸镀源材料（14）的状态在受热后由液态变为气态；喷嘴（12）设置在蒸镀坩埚（11）的出口处，喷嘴（12）用于向待蒸镀基板（15）表面喷射呈气态的蒸镀源材料（14）；浮板（13）被配置为：漂浮在呈液态的蒸镀源材料（14）的表面，浮板（13）具有多个镂空结构（130），多个镂空结构（130）被配置为：供呈气态的蒸镀源材料（14）通过。

Description

蒸镀结构、蒸镀装置、蒸镀系统及蒸镀结构的使用方法
本公开要求于2019年01月24日提交的申请号为201910069733.3、发明名称为“蒸镀结构、蒸镀系统及蒸镀结构的使用方法”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及显示技术领域，特别涉及一种蒸镀结构、蒸镀装置、蒸镀系统及蒸镀结构的使用方法。
背景技术
在有机发光二极管(英文：Organic Light-Emitting Diode；简称：OLED)显示面板的制备过程中，常采用蒸镀法进行膜层的制备。
相关技术中，蒸镀法主要通过采用蒸镀结构向待蒸镀基板喷射蒸镀源材料的方式，在待蒸镀基板上形成膜层。该蒸镀结构通常包括：蒸镀坩埚，以及位于蒸镀坩埚出口处的喷嘴。该蒸镀法的实现过程为：将固态或液态的蒸镀源材料放置在蒸镀坩埚中，通过电阻加热等方式对蒸镀源材料进行加热，使蒸镀源材料的状态在受热后变为气态，并控制蒸镀坩埚由待蒸镀基板的一端移动至另一端，且在移动过程中控制喷嘴向待蒸镀基板表面喷射呈气态的蒸镀源材料，使得蒸镀源材料沉积在待蒸镀基板的表面。
发明内容
本公开提供了一种蒸镀结构、蒸镀装置、蒸镀系统及蒸镀结构的使用方法，所述技术方案如下：
一方面，提供了一种蒸镀结构，所述蒸镀结构包括：蒸镀坩埚、喷嘴和浮板，
所述蒸镀坩埚用于盛放蒸镀源材料，所述蒸镀源材料的状态在受热后由液态变为气态；
所述喷嘴设置在所述蒸镀坩埚的出口处，所述喷嘴用于向待蒸镀基板表面 喷射呈气态的所述蒸镀源材料；
所述浮板被配置为：漂浮在呈液态的所述蒸镀源材料的表面所述浮板具有多个镂空结构，所述多个镂空结构被配置为：供呈气态的所述蒸镀源材料通过。
可选地，所述浮板为空心的板状结构。
可选地，所述浮板包括：多个连接筒、相对设置的背板和盖板，所述背板具有多个第一通孔，所述盖板具有与所述多个第一通孔一一对应的多个第二通孔；
一个连接筒在一个第一通孔处与所述背板密封连接，且在与所述一个第一通孔对应的第二通孔处与所述盖板密封连接，得到一个所述镂空结构；
所述背板在所述背板的边缘且未设置所述第一通孔的位置处，与所述盖板在所述盖板的边缘且未设置所述第二通孔的位置处密封连接，得到密闭空腔。
可选地，所述背板和所述盖板均为曲面板状结构；
或者，所述背板和所述盖板中的一个为曲面板状结构，另一个为平面板状结构；
或者，所述背板和所述盖板均为平面板状结构。
其中，所述浮板还包括：连接板，所述背板在所述背板的边缘且未设置所述第一通孔的位置处，与所述盖板在所述盖板的边缘且未设置所述第二通孔的位置处，通过所述连接板密封连接。
可选地，所述浮板为实心的板状结构。
其中，所述浮板的密度小于呈液态的所述蒸镀源材料的密度。
可选地，所述浮板的材料为导热材料。
或者，所述浮板用于与所述蒸镀源材料接触的表面设置有导热材料层。
可选地，所述多个镂空结构均匀分布在所述浮板的表面上；
或者，所述浮板具有多个区域，位于不同区域中的镂空结构的分布密度不同。
可选地，所述浮板具有多个区域，位于不同区域中的镂空结构的开口大小不同。
可选地，所述多个镂空结构的分布密度随镂空结构与所述浮板边缘之间的距离的增大而增大。
可选地，所述多个镂空结构的开口大小随镂空结构与所述浮板边缘之间的 距离的增大而增大。
可选地，所述蒸镀结构还包括：连接板，所述浮板为空心的板状结构，所述浮板的材料为导热材料，且所述浮板包括：多个连接筒、相对设置的背板和盖板，所述背板具有多个第一通孔，所述盖板具有与所述多个第一通孔一一对应的多个第二通孔；
一个连接筒在一个第一通孔处与所述背板密封连接，且在与所述一个第一通孔对应的第二通孔处与所述盖板密封连接，得到一个所述镂空结构；
所述背板和所述盖板均为平面板状结构，所述背板在所述背板的边缘且未设置所述第一通孔的位置处，与所述盖板在所述盖板的边缘且未设置所述第二通孔的位置处，通过所述连接板密封连接，得到密闭空腔；
且所述浮板具有多个区域，位于不同区域中的镂空结构的分布密度不同，且位于不同区域中的镂空结构的开口大小不同。
另一方面，提供了一种蒸镀装置，所述系统包括：承载槽和至少一个蒸镀结构，所述蒸镀结构包括：蒸镀坩埚、喷嘴和浮板，
所述蒸镀坩埚用于盛放蒸镀源材料，所述蒸镀源材料的状态在受热后由液态变为气态；
所述喷嘴设置在所述蒸镀坩埚的出口处，所述喷嘴用于向待蒸镀基板表面喷射呈气态的所述蒸镀源材料；
所述浮板被配置为：漂浮在呈液态的所述蒸镀源材料的表面，所述浮板具有多个镂空结构，所述多个镂空结构被配置为：供呈气态的所述蒸镀源材料通过。
再一方面，提供了一种蒸镀系统，所述系统包括：蒸镀腔室，及位于所述蒸镀腔室内部的蒸镀装置，所述蒸镀装置为上述任一所述的蒸镀装置。
又一方面，提供了一种蒸镀结构的使用方法，所述蒸镀结构包括：蒸镀坩埚、喷嘴和浮板，所述方法包括：
依次将蒸镀源材料和所述浮板放入所述蒸镀坩埚；
将所述喷嘴安装在所述蒸镀坩埚的出口处；
对所述蒸镀源材料进行加热，使所述蒸镀源材料的状态在受热后由液态变为气态，并从所述喷嘴向待蒸镀基板表面喷射呈气态的所述蒸镀源材料；
其中，所述浮板被配置为：漂浮在呈液态的所述蒸镀源材料的表面，所述 浮板具有多个镂空结构，所述多个镂空结构被配置为：供呈气态的所述蒸镀源材料通过。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是一种相关技术中蒸镀结构的结构示意图；
图2是本公开实施例提供的一种蒸镀结构的结构示意图；
图3是本公开实施例提供的另一种蒸镀结构的结构示意图；
图4是另一种相关技术中蒸镀结构的结构示意图；
图5是本公开实施例提供的一种浮板的俯视图；
图6是本公开实施例提供的又一种蒸镀结构的结构示意图；
图7是本公开实施例提供的另一种浮板的俯视图；
图8是本公开实施例提供的又一种浮板的俯视图；
图9是本公开实施例提供的一种浮板的截面示意图；
图10是本公开实施例提供的另一种浮板的截面示意图；
图11是本公开实施例提供的再一种浮板的截面示意图；
图12是本公开实施例提供的又一种浮板的截面示意图；
图13是本公开实施例提供的再一种浮板的截面示意图；
图14是本公开实施例提供的一种蒸镀结构的使用方法的流程图；
图15是本公开实施例提供的一种蒸镀装置的结构示意图；
图16是本公开实施例提供的一种蒸镀系统的结构示意图。
具体实施方式
为使本公开的原理和优点更加清楚，下面将结合附图对本公开实施方式作进一步地详细描述。
通常的，当蒸镀结构未移动时，蒸镀坩埚内呈液态的蒸镀源材料在不同位置处的液面高度相同；而当蒸镀结构移动时，在惯性的作用下，呈液态的蒸镀 源材料会在蒸镀坩埚内晃动，导致呈液态的蒸镀源材料在蒸镀坩埚中不同位置处的液面高度不同。例如，请参考图1，当蒸镀结构的移动方向X为水平向右时，在惯性的作用下，靠近蒸镀坩埚01左侧内壁的呈液态的蒸镀源材料L的液面高度h1大于靠近蒸镀坩埚01右侧内壁的呈液态的蒸镀源材料L的液面高度h2。
当呈液态的蒸镀源材料在蒸镀坩埚中不同位置处的液面高度不同时，会导致蒸镀坩埚内呈气态的蒸镀源材料的压力分布不均匀，进而导致较容易出现不同喷嘴02的入口处的呈气态的蒸镀源材料的压力不同。
当喷嘴02入口处呈气态的蒸镀源材料的压力越大时，该喷嘴02在单位时间内向待蒸镀基板(图1中未示出)表面喷射的蒸镀源材料越多，相应的，沉积在待蒸镀基板上的蒸镀源材料越厚。因此，不同的喷嘴02入口处的呈气态的蒸镀源材料的压力不同时，较容易出现形成在待蒸镀基板上的蒸镀源材料的厚度不同的情况，导致在待蒸镀基板上形成的膜层的均匀度较差。
本公开实施例提供了一种蒸镀结构，可降低在蒸镀结构移动时，呈液态的蒸镀源材料在蒸镀坩埚内晃动的幅度，能够有效地提高在待蒸镀基板上形成的膜层的均匀度。
图2为本公开实施例提供的一种蒸镀结构的结构示意图。如图2所示，该蒸镀结构1可以包括：蒸镀坩埚11、喷嘴12和浮板13。
蒸镀坩埚11用于盛放蒸镀源材料，蒸镀源材料的状态在受热后由液态变为气态。其中，蒸镀源材料在未被加热时(也即在常温状态下)可以呈液态，在被加热后可以呈气态。或者，蒸镀源材料在未被加热时可以呈固态，在被加热时，先由固态变为液态，然后再由液态变为气态，此时，该蒸镀源材料可以称为熔融性的蒸镀源材料。
喷嘴12设置在蒸镀坩埚11的出口处，喷嘴12用于向待蒸镀基板表面喷射呈气态的蒸镀源材料。
浮板13被配置为：漂浮在呈液态的蒸镀源材料14的表面，此时，浮板13与蒸镀坩埚11的内壁之间具有间隙。浮板13具有多个镂空结构130，多个镂空结构130被配置为：供呈气态的蒸镀源材料通过。呈气态的蒸镀源材料通过多个镂空结构后，能够到达喷嘴12，使得喷嘴12能够向待蒸镀基板表面喷射该呈 气态的蒸镀源材料，以在待蒸镀基板上形成膜层。
综上所述，本公开实施例提供的蒸镀结构，通过将浮板漂浮在呈液态的蒸镀源材料的表面，增加了使呈液态的蒸镀源材料在蒸镀坩埚内产生晃动所需的动力，减小了在相同大小的动力作用下呈液态的蒸镀源材料在蒸镀坩埚内的晃动幅度；且由于浮板与蒸镀坩埚的内壁之间具有间隙，使得浮板与蒸镀坩埚的内壁能够发生碰撞，并产生与呈液态的蒸镀源材料的晃动方向相反的力，该相反的力能够减弱呈液态的蒸镀源材料在蒸镀坩埚内的晃动幅度，相较于相关技术，减小了蒸镀坩埚内不同位置处液面的高度差，减小了位于不同喷嘴的入口处的压差，提高了从不同喷嘴向待蒸镀基板表面喷射的蒸镀源材料的量的均一性，进而提高了在待蒸镀基板上形成的膜层的均一性。
其中，由于浮板13漂浮在呈液态的蒸镀源材料14的表面，可以确定浮板13与蒸镀坩埚11的内壁之间具有间隙。请参考图2，假设该蒸镀结构1沿水平向右的方向移动，则使呈液态的蒸镀源材料14产生晃动的力水平向左，在该水平向左的力的作用下，漂浮在呈液态的蒸镀源材料14表面上的浮板13也向左移动，且浮板13会撞击蒸镀坩埚11的左侧内壁。当浮板13撞击蒸镀坩埚11的左侧内壁时，浮板13会受到水平向右的力，并在该水平向右的力的作用下水平向右移动。在浮板13水平向右移动时，由于浮板13与呈液态的蒸镀源材料14的表面接触，因此，浮板13会向呈液态的蒸镀源材料14施加水平向右的摩擦力。并且，由于部分呈液态的蒸镀源材料14会浸入到浮板13的镂空结构130所围成的空隙中，浮板13会向该部分呈液态的蒸镀源材料14施加水平向右的反向作用力。由于该摩擦力的方向和该反向作用力的方向均与使呈液态的蒸镀源材料14产生晃动的力的方向相反，使得该摩擦力和该反向作用力能够与使呈液态的蒸镀源材料14产生晃动的力部分抵消，因此，能够减弱呈液态的蒸镀源材料14的晃动幅度。
可选的，根据应用需求设置浮板13与蒸镀坩埚11的内壁之间的间隙的宽度。例如，浮板13与蒸镀坩埚11的内壁之间的间隙的宽度可以小于参考宽度，使得呈液态的蒸镀源材料14在蒸镀坩埚11内部发生较小幅度的晃动时，浮板13就能够与蒸镀坩埚11的内壁发生碰撞，提高浮板13根据蒸镀源材料14产生反作用力的灵敏度。
在蒸镀结构的工作过程中，由于位于蒸镀坩埚内的呈气态的蒸镀源材料的 压力高于位于蒸镀坩埚外的蒸镀源材料的压力，使得位于蒸镀坩埚内的呈气态的蒸镀源材料能够在压差的作用下，自主地由喷嘴向待蒸镀基板的表面喷射。或者，喷嘴上可以设置有增压组件，此时，可通过增压组件向喷嘴处呈气态的蒸镀源材料增压，以向待蒸镀基板的表面喷射呈气态的蒸镀源材料。
可选的，对蒸镀源材料进行加热可以具有多种可实现方式，在一种可实现方式中，蒸镀坩埚可以具有加热功能，此时，蒸镀坩埚可以直接为蒸镀源材料进行加热，以使蒸镀源材料的状态在受热后变为气态；在另一种可实现方式中，可以采用加热装置为蒸镀源材料进行加热。示例地，加热装置可以为蒸镀坩埚加热，蒸镀坩埚将接收到的热量传递至蒸镀源材料，以使蒸镀源材料的状态在受热后变为气态。
可选地，浮板的材料可以为具有导热能力的导热材料。例如，浮板的材料可以为金属或具有导热能力的复合导热材料(如石墨烯或导热硅脂等)。当浮板13的材料为具有导热能力的材料时，靠近蒸镀坩埚11内壁的蒸镀源材料可以将一部分热量传递至浮板13。该传递至浮板13的热量可以通过浮板13传递至离蒸镀坩埚内壁较远的位置处的蒸镀源材料。当浮板13的材料的导热系数高于蒸镀源材料的导热系数时，能够使更多的热量被传递至离蒸镀坩埚内壁较远的位置处的蒸镀源材料。因此，可以使位于该离蒸镀坩埚内壁较远的位置处的蒸镀源材料具有较高的温度，减小了离蒸镀坩埚内壁较远的位置处的蒸镀源材料与靠近蒸镀坩埚内壁的蒸镀源材料的温差，提高了蒸镀源材料在蒸镀蒸锅内的受热均匀度，使得位于蒸镀坩埚不同位置处的蒸镀源材料由液态变为气态的速率较接近，能够进一步减小不同喷嘴入口处的呈气态的蒸镀源材料间的压差。
或者，该浮板13用于与蒸镀源材料14接触的表面可以设置有导热材料层。该导热材料层能够在不同位置处的蒸镀源材料之间进行热传递，也能进一步减小不同喷嘴入口处的呈气态的蒸镀源材料间的压差。该导热材料层可以为由导热材料制成的膜层，或者，该导热材料层可以为导热矽胶布或导热胶带等。并且，当该浮板13上设置有导热材料层时，该浮板13的材料可以为导热材料，或者也可以为不导热的材料，本公开实施例对其不做具体限定。
可选地，请继续参考图3，喷嘴12可以包括：喷嘴座121和喷嘴头122。其中，喷嘴座121设置在蒸镀坩埚的出口处，喷嘴头122设置在喷嘴座121上，喷嘴头122用于向待蒸镀基板15表面喷射呈气态的蒸镀源材料。喷嘴座121与 蒸镀坩埚可拆卸连接。示例地，喷嘴座121与蒸镀坩埚之间的连接方式可以为卡接。
在本公开实施例中，由于浮板上具有多个镂空结构130，当呈气态的蒸镀源材料从镂空结构130靠近喷嘴的一端流出时，呈气态的蒸镀源材料的流动轨迹不再是相关技术中沿竖直向上的方向流动(如图4所示)，而是在镂空结构130的出口处呈发散状流动(如图3所示)，即其流动轨迹能够满足克努森分布。此时，从不同镂空结构130流出的呈气态的蒸镀源材料可以相互混合，且混合的蒸镀源材料之间能够进行热量交换，进一步地提高了蒸镀坩埚中温度的均匀性，减小了不同喷嘴入口处的压差。
在一种可实现方式中，多个镂空结构可以均匀地分布在浮板的表面上。示例地，如图5所示，多个镂空结构130均匀地分布在浮板的表面上，此时，从各个镂空结构130通过的呈气态的蒸镀源材料的量基本相同。
在另一种可实现方式中，多个镂空结构可以不均匀地分布在浮板的表面上。例如，浮板可以具有多个区域，位于不同区域中的镂空结构130的分布密度不同，和/或，位于不同区域中的镂空结构130的开口大小不同。
可选地，当位于不同区域中的镂空结构130的分布密度不同时(如图6和图7所示)，同一区域中镂空结构130也可以均匀或不均匀地分布在该区域中。当位于不同区域中的镂空结构130的开口大小不同时，同一区域中镂空结构的开口大小也可以相同或不同，本公开实施例对此不做限定。示例地，图7为图6中浮板的俯视示意图，如图7所示，靠近蒸镀坩埚(未示出)内壁的区域Q4中镂空结构130的分布密度小于离蒸镀坩埚的内壁较远的区域Q5中镂空结构130的分布密度。
作为一种可实现方式，当浮板具有多个区域，位于不同区域中的镂空结构130的开口大小不同时，浮板13中靠近蒸镀坩埚内壁的区域中的镂空结构130的开口大小可以小于离蒸镀坩埚内壁较远的区域中的镂空结构130的开口大小。例如，如图8所示，靠近蒸镀坩埚(未示出)内壁的区域Q6中镂空结构130的开口大小均小于离蒸镀坩埚的内壁较远的区域Q7中镂空结构130的开口大小，也即靠近蒸镀坩埚内壁的区域Q6的开口率小于离蒸镀坩埚的内壁较远的区域Q7的开口率。
在另一种不均匀分布的情况中，镂空结构的分布密度和/或开口大小可以随 镂空结构与浮板边缘之间的距离的增大而增大。
当多个镂空结构不均匀地分布在浮板的表面上时，可以通过镂空结构的分布密度和/或开口大小，均衡由蒸镀源材料的受热不均引起的到达不同位置处的呈气态的蒸镀源材料的量的不均匀程度，使得从不同位置处的镂空结构130流出并到达喷嘴入口(未示出)的呈气态的蒸镀源材料的量能够尽量相等，使得单位时间内不同喷嘴向待蒸镀基板表面喷射的蒸镀源材料的量也尽量相等，进而提高在待蒸镀基板上形成的膜层厚度的均匀性。
另外，在开口较小的镂空结构130所在的区域中，浮板与呈液态的蒸镀源材料的表面之间的呈气态的蒸镀源材料，可以循环到开口较大的镂空结构130处，并通过该开口较大的镂空结构130到达喷嘴，增加了从开口较大的镂空结构130流出并到达喷嘴入口的呈气态蒸镀源材料的量，进一步减小了位于不同喷嘴的入口处的呈气态蒸镀源材料的压差。
可选地，浮板上的多个镂空结构在浮板延伸方向上截面的外接图形可以呈圆形、矩形或三角形等，本公开实施例对此不做限定。图5、图7和图8是多个镂空结构在浮板延伸方向上截面的外接图形呈圆形的示意图。
并且，浮板13可以为实心的板状结构或空心的板状结构。
当浮板13为实心的板状结构时，浮板13的密度小于呈液态的蒸镀源材料14的密度，以保证该浮板13能够漂浮在呈液态的蒸镀源材料14的表面。示例地，浮板可以由能够使浮板漂浮在呈液态的蒸镀源材料表面的材料制成，例如树脂或钛合金等。此时，浮板13的制作工艺较简单。示例地，在制造该浮板时，可以直接采用打孔工具在预先形成的板状结构上打孔，以形成浮板13上的多个镂空结构130。
当浮板13为空心的板状结构时，如图9所示，浮板13可以包括：多个连接筒131、相对设置的背板133和盖板132。该背板133具有多个第一通孔C1，盖板132具有与多个第一通孔C1一一对应的多个第二通孔C2。其中，背板133与盖板132中的一个与呈液态的蒸镀源材料的表面接触，本公开实施例以背板133与呈液态的蒸镀源材料的表面接触为例进行说明。
对于每个连接筒131，任一连接筒131可以在一个第一通孔C1处与背板133密封连接，且在与一个第一通孔C1对应的第二通孔C2处与盖板132密封连接，以得到一个镂空结构(未标出)。将多个连接筒131均按照上述方式分别与背 板133和盖板132密封连接后，可以得到多个镂空结构。
并且，背板133在背板133的边缘且未设置第一通孔C1的位置处，可以与盖板132在盖板132的边缘且未设置第二通孔C2的位置处密封连接，以得到由该背板133、盖板132和多个连接筒131围成的密闭空腔。示例地，背板133的边缘且未设置第一通孔C1的位置可以为背板133的边缘区域中的任一位置，盖板132的边缘且未设置第二通孔C2的位置可以为盖板132的边缘区域中的任一位置。
其中，连接筒131与背板133之间的密封连接，以及连接筒131与盖板132之间的密封连接均可以为可拆卸连接或不可拆卸连接。示例地，该可拆卸连接可以为卡接或胶粘连接等。该不可拆卸连接可以为焊接等。
可选地，背板133和盖板132的连接方式可以有多种，本公开实施例将以以下几种为例对其进行说明。
在第一种可实现方式中，背板133和盖板132可以均为平面板状结构，此时，浮板13还可以包括：连接板134，背板133与盖板132之间还可以通过该连接板134连接。
如图9所示，当背板133和盖板132均为平面板状结构时，背板133的边缘且未设置第一通孔C1的位置处，通过连接板134与盖板132的边缘且未设置第二通孔C2的位置密封连接。
可选地，连接板134与背板133的密封连接，以及连接板134与盖板132的密封连接可以均为可拆卸连接或不可拆卸连接。当连接板134与背板133之间的连接，以及连接板134与盖板132之间的连接为可拆卸连接时，该可拆卸连接可以为卡接或胶粘连接。当连接板134与背板133之间的连接，以及连接板134与盖板132之间的连接为不可拆卸连接时，该不可拆卸连接可以为焊接等。
在第二种可实现方式中，背板133和盖板132可以均为曲面板状结构。此时，背板133与盖板132可以直接连接或通过连接板134连接。
如图10所示，背板133朝向连接筒的一面可以呈凹形，盖板132朝向连接筒的一面可以呈凸形，此时，背板133的边缘且未设置第一通孔C1的位置与盖板132的边缘且未设置第二通孔C2的位置直接密封连接，以形成浮板。
其中，背板133与盖板132之间的连接方式可以为卡接或胶粘连接。可选 地，当背板133和盖板132的材料均为金属时，背板133和盖板132的连接方式还可以为焊接。
如图11所示，背板133朝向连接筒的一面可以呈凹形，盖板132朝向连接筒的一面可以呈凸形。背板133的边缘且未设置第一通孔C1的位置与盖板132的边缘且未设置第二通孔C2的位置通过连接板134密封连接。其中，背板133的边缘且未设置第一通孔C1的位置与连接板134的一端密封连接，连接板134的另一端与盖板132的边缘且未设置第二通孔C2的位置密封连接。
在第三种可实现方式中，背板133和盖板132中的一个为曲面板状结构，另一个为平面板状结构。此时，背板133与盖板132可以直接连接或通过连接板134连接。
如图12所示，背板133为平面板状结构、盖板132为曲面板状结构，且盖板132朝向连接筒的一面可以呈凸形，背板133未设置第一通孔C1的位置与盖板132未设置第二通孔C2的位置直接密封连接。
其中，背板133与盖板132之间的连接方式可以为卡接或胶粘连接。可选地，当背板133和盖板132的材料均为金属时，背板133和盖板132的连接方式还可以为焊接。
如图13所示，背板133为平面板状结构、盖板132为曲面板状结构，且盖板132朝向连接筒的一面可以呈凸形。背板133未设置未设置第一通孔C1的位置与盖板132未设置未设置第二通孔C2的位置通过连接板134密封连接。其中背板133未设置未设置第一通孔C1的位置与连接板134的一端密封连接，连接板134的另一端与盖板132未设置未设置第二通孔C2的位置密封连接。
综上所述，本公开实施例提供的蒸镀结构，通过将浮板漂浮在呈液态的蒸镀源材料的表面，增加了使呈液态的蒸镀源材料在蒸镀坩埚内产生晃动所需的动力，减小了在相同大小的动力作用下呈液态的蒸镀源材料在蒸镀坩埚内的晃动幅度；且由于浮板与蒸镀坩埚的内壁之间具有间隙，使得浮板与蒸镀坩埚的内壁能够发生碰撞，并产生与呈液态的蒸镀源材料的晃动方向相反的力，该相反的力能够减弱呈液态的蒸镀源材料在蒸镀坩埚内的晃动幅度，相较于相关技术，减小了蒸镀坩埚内不同位置处液面的高度差，减小了位于不同喷嘴的入口处的压差，提高了从不同喷嘴向待蒸镀基板表面喷射的蒸镀源材料的量的均一性，进而提高了在待蒸镀基板上形成的膜层的均一性。
图14为本公开实施例提供的一种蒸镀结构的使用方法的流程图。该蒸镀结构可以为上述实施例中的任一蒸镀结构，该蒸镀结构的使用方法可以包括：
步骤1301、依次将蒸镀源材料和浮板放入蒸镀坩埚。
步骤1302、将喷嘴安装在蒸镀坩埚的出口处。
步骤1303、对蒸镀源材料进行加热，使蒸镀源材料的状态在受热后由液态变为气态，并从喷嘴向待蒸镀基板表面喷射呈气态的蒸镀源材料。
其中，浮板被配置为：漂浮在呈液态的蒸镀源材料的表面，且浮板与蒸镀坩埚的内壁之间具有间隙，浮板具有多个镂空结构，多个镂空结构被配置为：供呈气态的蒸镀源材料通过。
并且，当蒸镀结构包括多个蒸镀坩埚时，不同蒸镀坩埚中可以装有不同的蒸镀材料，以在到蒸镀基板上形成不同的膜层。此时，可以通过控制蒸镀坩埚由待蒸镀基板的一端移动至另一端，同时控制不同蒸镀坩埚上的喷嘴向待蒸镀基板表面喷射呈气态的蒸镀源材料，以在待蒸镀基板的表面上形成不同的膜层。
综上所述，本公开实施例提供的蒸镀结构的使用方法，通过依次将蒸镀源材料和浮板放入蒸镀坩埚，由于浮板漂浮在呈液态的蒸镀源材料的表面，该浮板增加了使呈液态的蒸镀源材料在蒸镀坩埚内产生晃动所需的动力，减小了在相同大小的动力作用下呈液态的蒸镀源材料在蒸镀坩埚内的晃动幅度；且由于浮板与蒸镀坩埚的内壁之间具有间隙，使得浮板与蒸镀坩埚的内壁能够发生碰撞，并产生与呈液态的蒸镀源材料的晃动方向相反的力，该相反的力能够减弱呈液态的蒸镀源材料在蒸镀坩埚内的晃动幅度，相较于相关技术，减小了蒸镀坩埚内不同位置处液面的高度差，减小了位于不同喷嘴的入口处的压差，提高了从不同喷嘴向待蒸镀基板表面喷射的蒸镀源材料的量的均一性，进而提高了在待蒸镀基板上形成的膜层的均一性。
图15为本公开实施例提供的一种蒸镀装置的结构示意图。如图15所示，该蒸镀装置Z可以包括：承载槽2和至少一个蒸镀结构1，且当蒸镀装置Z包括：多个蒸镀结构1时，该蒸镀装置Z还包括：设置在每两个蒸镀坩埚11之间的至少一个隔板3。其中，图15是蒸镀装置包括一个蒸镀结构1和两个隔板3，且一个蒸镀结构1包括三个蒸镀坩埚11的示意图。
承载槽2的内壁具有凹槽，该凹槽中嵌入有用于对蒸镀结构1和至少一个隔板3进行加热的加热装置(未示出)。示例地，该加热装置可以为电阻丝，此时，可以向该加热装置提供电流，以使加热装置对蒸镀结构1和至少一个隔板3进行加热。
蒸镀装置Z包括多个蒸镀结构1时，该多个蒸镀结构1沿承载槽2的延伸方向依次排列在承载槽2内，且多个蒸镀结构1可以为本公开实施例提供的任一蒸镀结构1。至少一个隔板3均与承载槽的内壁固定连接，并与蒸镀结构1中蒸镀坩埚11的外壁接触，该至少一个隔板3用于将相邻的两个蒸镀坩埚11隔开，以及对与该至少一个隔板3接触的蒸镀坩埚11进行加热。
本公开实施例还提供了一种蒸镀系统。如图16所示，该蒸镀系统可以包括蒸镀腔室T，及位于蒸镀腔室T内部的蒸镀装置Z、动力装置D和检测装置J。
动力装置与蒸镀装置中的承载槽固定连接，该动力装置用于带动蒸镀装置在蒸镀腔室内移动，以对待蒸镀基板进行蒸镀。
检测装置与动力装置固定连接，检测装置用于检测呈气态的蒸镀源材料在蒸镀腔室内的流动速率，并将该流动速率的信息反馈至动力装置，以供动力装置根据该流动速率调整动力装置的移动速率。其中，检测装置可以为石英晶体微天平(英文：Quartz Crystal Microbalance；简称：QCM)。喷嘴将呈气态的蒸镀源材料喷射到蒸镀腔室内时，该呈气态的蒸镀源材料会落在石英晶体微天平的表面，该石英晶体微天平可以检测落在其表面的呈气态的蒸镀源材料的质量，并根据其检测到的质量通过石英晶体振荡电路输出具有一定频率的电信号，以使计算机等其他辅助设备根据该电信号获得该检测到的质量，并根据该质量确定呈气态的蒸镀源材料在蒸镀腔室内的流动速率。
综上所述，本公开实施例提供的蒸镀系统包括蒸镀结构，且蒸镀结构包括浮板。通过将浮板漂浮在呈液态的蒸镀源材料的表面，增加了使呈液态的蒸镀源材料在蒸镀坩埚内产生晃动所需的动力，减小了在相同大小的动力作用下呈液态的蒸镀源材料在蒸镀坩埚内的晃动幅度；且由于浮板与蒸镀坩埚的内壁之间具有间隙，使得浮板与蒸镀坩埚的内壁能够发生碰撞，并产生与呈液态的蒸镀源材料的晃动方向相反的力，该相反的力能够减弱呈液态的蒸镀源材料在蒸镀坩埚内的晃动幅度，相较于相关技术，减小了蒸镀坩埚内不同位置处液面的 高度差，减小了位于不同喷嘴的入口处的压差，提高了从不同喷嘴向待蒸镀基板表面喷射的蒸镀源材料的量的均一性，进而提高了在待蒸镀基板上形成的膜层的均一性。
以上所述仅为本公开的可选实施例，并不用以限制本公开，凡在本公开的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (20)

  1. 一种蒸镀结构(1)，所述蒸镀结构(1)包括：蒸镀坩埚(11)、喷嘴(12)和浮板(13)，
    所述蒸镀坩埚(11)用于盛放蒸镀源材料(14)，所述蒸镀源材料(14)的状态在受热后由液态变为气态；
    所述喷嘴(12)设置在所述蒸镀坩埚(11)的出口处，所述喷嘴(12)用于向待蒸镀基板(15)表面喷射呈气态的所述蒸镀源材料(14)；
    所述浮板(13)被配置为：漂浮在呈液态的所述蒸镀源材料(14)的表面，所述浮板(13)具有多个镂空结构(130)，所述多个镂空结构(130)被配置为：供呈气态的所述蒸镀源材料(14)通过。
  2. 根据权利要求1所述的蒸镀结构(1)，其中，所述浮板(13)为空心的板状结构。
  3. 根据权利要求2所述的蒸镀结构(1)，其中，所述浮板(13)包括：多个连接筒(131)、相对设置的背板(133)和盖板(132)，所述背板(133)具有多个第一通孔(C1)，所述盖板(132)具有与所述多个第一通孔(C1)一一对应的多个第二通孔(C2)；
    一个连接筒(131)在一个第一通孔(C1)处与所述背板(133)密封连接，且在与所述一个第一通孔(C1)对应的第二通孔(C2)处与所述盖板(132)密封连接，得到一个所述镂空结构(130)；
    所述背板(133)在所述背板(133)的边缘且未设置所述第一通孔(C1)的位置处，与所述盖板(132)在所述盖板(132)的边缘且未设置所述第二通孔(C2)的位置处密封连接，得到密闭空腔。
  4. 根据权利要求3所述的蒸镀结构(1)，其中，所述背板(133)和所述盖板(132)均为曲面板状结构。
  5. 根据权利要求3所述的蒸镀结构(1)，其中，所述背板(133)和所述 盖板(132)中的一个为曲面板状结构，另一个为平面板状结构。
  6. 根据权利要求3所述的蒸镀结构(1)，其中，所述背板(133)和所述盖板(132)均为平面板状结构。
  7. 根据权利要求6所述的蒸镀结构(1)，其中，所述浮板(13)还包括：连接板(134)，所述背板(133)在所述背板(133)的边缘且未设置所述第一通孔(C1)的位置处，与所述盖板(132)在所述盖板(132)的边缘且未设置所述第二通孔(C2)的位置处，通过所述连接板(134)密封连接。
  8. 根据权利要求1所述的蒸镀结构(1)，其中，所述浮板(13)为实心的板状结构。
  9. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述浮板(13)的密度小于呈液态的所述蒸镀源材料(14)的密度。
  10. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述浮板(13)的材料为导热材料。
  11. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述浮板(13)用于与所述蒸镀源材料(14)接触的表面设置有导热材料层。
  12. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述多个镂空结构(130)均匀分布在所述浮板(13)的表面上。
  13. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述浮板(13)具有多个区域，位于不同区域中的镂空结构(130)的分布密度不同。
  14. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述浮板(13)具有多个区域，位于不同区域中的镂空结构(130)的开口大小不同。
  15. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述多个镂空结构(130)的分布密度随镂空结构(130)与所述浮板(13)边缘之间的距离的增大而增大。
  16. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述多个镂空结构(130)的开口大小随镂空结构(130)与所述浮板(13)边缘之间的距离的增大而增大。
  17. 根据权利要求1至8任一所述的蒸镀结构(1)，其中，所述蒸镀结构(1)还包括：连接板(134)，
    所述浮板(13)为空心的板状结构，所述浮板(13)的材料为导热材料，且所述浮板(13)包括：多个连接筒(131)、相对设置的背板(133)和盖板(132)，所述背板(133)具有多个第一通孔(C1)，所述盖板(132)具有与所述多个第一通孔(C1)一一对应的多个第二通孔(C2)；
    一个连接筒(131)在一个第一通孔(C1)处与所述背板(133)密封连接，且在与所述一个第一通孔(C1)对应的第二通孔(C2)处与所述盖板(132)密封连接，得到一个所述镂空结构(130)；
    所述背板(133)和所述盖板(132)均为平面板状结构，所述背板(133)在所述背板(133)的边缘且未设置所述第一通孔(C1)的位置处，与所述盖板(132)在所述盖板(132)的边缘且未设置所述第二通孔(C2)的位置处，通过所述连接板(134)密封连接，得到密闭空腔；
    且所述浮板(13)具有多个区域，位于不同区域中的镂空结构(130)的分布密度不同，且位于不同区域中的镂空结构(130)的开口大小不同。
  18. 一种蒸镀装置(Z)，所述系统包括：承载槽(2)和至少一个蒸镀结构，所述蒸镀结构(1)包括：蒸镀坩埚(11)、喷嘴(12)和浮板(13)，
    所述蒸镀坩埚(11)用于盛放蒸镀源材料(14)，所述蒸镀源材料(14)的状态在受热后由液态变为气态；
    所述喷嘴(12)设置在所述蒸镀坩埚(11)的出口处，所述喷嘴(12)用 于向待蒸镀基板(15)表面喷射呈气态的所述蒸镀源材料(14)；
    所述浮板(13)被配置为：漂浮在呈液态的所述蒸镀源材料(14)的表面，所述浮板(13)具有多个镂空结构(130)，所述多个镂空结构(130)被配置为：供呈气态的所述蒸镀源材料(14)通过。
  19. 一种蒸镀系统，所述系统包括：蒸镀腔室(T)，及位于所述蒸镀腔室(T)内部的蒸镀装置(Z)，所述蒸镀装置(Z)为权利要求18所述的蒸镀装置(Z)。
  20. 一种蒸镀结构(1)的使用方法，所述蒸镀结构(1)包括：蒸镀坩埚(11)、喷嘴(12)和浮板(13)，所述方法包括：
    依次将蒸镀源材料(14)和所述浮板(13)放入所述蒸镀坩埚(11)；
    将所述喷嘴(12)安装在所述蒸镀坩埚(11)的出口处；
    对所述蒸镀源材料(14)进行加热，使所述蒸镀源材料(14)的状态在受热后由液态变为气态，并从所述喷嘴(12)向待蒸镀基板(15)表面喷射呈气态的所述蒸镀源材料(14)；
    其中，所述浮板(13)被配置为：漂浮在呈液态的所述蒸镀源材料(14)的表面，所述浮板(13)具有多个镂空结构(130)，所述多个镂空结构(130)被配置为：供呈气态的所述蒸镀源材料(14)通过。
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819471A (ja) * 1981-07-27 1983-02-04 Fuji Electric Co Ltd セレン蒸着用蒸発源
JPS5896872A (ja) * 1981-12-04 1983-06-09 Mitsubishi Heavy Ind Ltd 真空蒸着部
JPH01306553A (ja) * 1988-05-31 1989-12-11 Nippon Dempa Kogyo Co Ltd 蒸着装置
CN1320172A (zh) * 1998-11-12 2001-10-31 福来克斯产品公司 线性孔径沉积设备及涂敷工艺
WO2017001910A1 (en) * 2015-06-29 2017-01-05 Flisom Ag Evaporation crucible with floater
CN109136855A (zh) * 2018-09-05 2019-01-04 京东方科技集团股份有限公司 一种蒸发源及蒸镀装置
CN109518136A (zh) * 2019-01-24 2019-03-26 成都京东方光电科技有限公司 蒸镀结构、蒸镀系统及蒸镀结构的使用方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6853141B2 (en) * 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US20080178805A1 (en) * 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
CN103849837B (zh) * 2014-03-24 2016-02-10 四川虹视显示技术有限公司 一种蒸发源装置
KR101846692B1 (ko) * 2016-08-05 2018-04-06 주식회사 제이몬 스피팅 방지 구조체를 구비한 증착장치용 증발원

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819471A (ja) * 1981-07-27 1983-02-04 Fuji Electric Co Ltd セレン蒸着用蒸発源
JPS5896872A (ja) * 1981-12-04 1983-06-09 Mitsubishi Heavy Ind Ltd 真空蒸着部
JPH01306553A (ja) * 1988-05-31 1989-12-11 Nippon Dempa Kogyo Co Ltd 蒸着装置
CN1320172A (zh) * 1998-11-12 2001-10-31 福来克斯产品公司 线性孔径沉积设备及涂敷工艺
WO2017001910A1 (en) * 2015-06-29 2017-01-05 Flisom Ag Evaporation crucible with floater
CN109136855A (zh) * 2018-09-05 2019-01-04 京东方科技集团股份有限公司 一种蒸发源及蒸镀装置
CN109518136A (zh) * 2019-01-24 2019-03-26 成都京东方光电科技有限公司 蒸镀结构、蒸镀系统及蒸镀结构的使用方法

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