WO2020148915A1 - Dispositif de détection de champ magnétique comprenant un élément à effet hall ou un circuit intégré à effet hall et capteur de proximité comprenant un dispositif de détection de champ magnétique - Google Patents

Dispositif de détection de champ magnétique comprenant un élément à effet hall ou un circuit intégré à effet hall et capteur de proximité comprenant un dispositif de détection de champ magnétique Download PDF

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Publication number
WO2020148915A1
WO2020148915A1 PCT/JP2019/002082 JP2019002082W WO2020148915A1 WO 2020148915 A1 WO2020148915 A1 WO 2020148915A1 JP 2019002082 W JP2019002082 W JP 2019002082W WO 2020148915 A1 WO2020148915 A1 WO 2020148915A1
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Prior art keywords
hall
magnetic field
magnetic
field detection
detection device
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PCT/JP2019/002082
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English (en)
Japanese (ja)
Inventor
昌哉 萩山
栄一 小菅
弘一 矢島
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艾礼富▲電▼子（深▲セン▼）有限公司
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Priority to CN201980000364.0A priority Critical patent/CN111712717A/zh
Publication of WO2020148915A1 publication Critical patent/WO2020148915A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

Definitions

  • the present invention relates to a magnetic field detection device using a Hall element or a Hall IC and a proximity sensor using this magnetic field detection device.
  • FIG. 20 schematically shows the structure and operation of the conventional reed switch 100.
  • the conventional reed switch 100 has a structure in which two lead pieces 102 and 103 made of a ferromagnetic material, which are inserted into a glass tube 101, are arranged close to each other.
  • the glass tube 101 is filled with an inert gas such as nitrogen.
  • the magnetic field sensitive direction of the conventional reed switch 100 is the same horizontal direction as the magnetic flux direction of the magnet 110, so that the operation width is wide and position adjustment is easy, but there is no polarity but impact is generated. However, there is a problem that the sensitivity is likely to change.
  • FIG. 21 is a diagram schematically showing the MR sensor 120 and its operation.
  • the MR sensor 120 is a two-terminal sensor that uses the magnetoresistive effect. As shown in FIG. 21, the magneto-sensitive direction of the MR sensor 120 is the same as the magnetic flux direction of the magnet 110, and it is difficult to adjust the position because the operation width is narrow, but there is no polarity and the sensitivity is high due to impact. It is difficult to change.
  • FIG. 22 is a diagram schematically showing the Hall element 130 and its operation.
  • the Hall element 130 uses the Hall effect that a voltage generated when a current flows in a direction horizontal to a semiconductor substrate surface and a magnetic flux is applied in a direction perpendicular to the substrate surface, that is, a so-called Hall voltage is proportional to a magnetic flux density.
  • the sensor As shown in FIG. 22, the Hall element 130 has a vertical magnetic field sensing direction and a wide operation width, so position adjustment is easy and sensitivity is unlikely to change due to impact. On the other hand, although it has polarity, it can be made non-polar by adding an electronic circuit.
  • Patent Document 1 discloses a magnetic proximity switch using a Hall element that detects magnetism instead of the reed switch.
  • a yoke for increasing the magnetic flux density in the vertical direction is provided in the magnetically sensitive portion of the Hall element.
  • Patent Document 2 discloses, for example, a magnetic sensor 200 using two Hall elements as the magnetic sensing units 201 and 202.
  • FIG. 23 is a cross-sectional view showing the structure of the magnetic sensor 200 disclosed in Patent Document 2.
  • the magnetic sensor 200 has a configuration in which a magnetic body 203 that forms a magnetic path is provided between the two magnetic sensitive sections 201 and 202. The detection of the magnetic flux in the vertical direction and the horizontal direction is performed by calculating the sum and difference of the outputs from the two magnetic sensing units 201 and 202.
  • the magnetic sensor of Patent Document 2 is capable of analog detection of the magnetic flux in the horizontal direction by providing the magnetic body 203 that forms a magnetic path between the two magnetic sensitive sections 201 and 202. is necessary.
  • a magnetic field detection device that has a horizontal magnetic sensing direction, a wide operation width, easy position adjustment, is less susceptible to change in sensitivity due to impact, and has a long life, Proximity sensors using magnetic field detection devices have not been obtained.
  • the present invention provides a magnetic field detection device and a magnetic field detection device in which the magnetic field is in the horizontal direction, the operation width is wide, position adjustment is easy, sensitivity is less likely to change due to impact, and the life is long.
  • the purpose is to provide the proximity sensor used.
  • the inventors of the present invention can realize a magnetic field detection device having a magnetic sensitive direction in the horizontal direction and a proximity sensor using the magnetic field detection device with a simple configuration in which a magnetic body is disposed in the vicinity of the Hall element or the Hall IC.
  • the inventors arrived at the present invention by obtaining the finding.
  • a magnetic field detection device of the present invention is a magnetic element for detecting a magnetic field in the horizontal direction with respect to a magnetic sensitive surface of the Hall element and the Hall element, the magnetic element being disposed close to the Hall element. It consists of and.
  • the magnetic substance is preferably Fe, Co, Ni, an alloy thereof, or an oxide soft magnetic material, and is disposed on the upper side and/or the lower side of the magnetic sensitive surface of the Hall element. To be done.
  • the Hall element and the magnetic body are preferably arranged on the substrate.
  • a Hall IC including a Hall element and an integrated circuit connected to the Hall element
  • the magnetic body is arranged horizontally close to a magnetic sensitive surface of the Hall IC. It may be installed.
  • the magnetic body is preferably arranged on the upper side and/or the lower side of the magnetically sensitive surface of the Hall IC.
  • the Hall IC and the magnetic body are preferably arranged on the substrate.
  • a proximity sensor may be configured using the magnetic field detection device of the present invention. This proximity sensor includes a substrate, a Hall IC, a magnetic body, and a case that covers these.
  • a magnetic field detection device and a magnetic field detection device that can make the magnetic sensitive direction horizontal, have a wide operation width, facilitate position adjustment, are less likely to change sensitivity due to impact, and have a long life.
  • the proximity sensor used can be provided.
  • FIG. 2A is a cross-sectional view taken along the line AA of FIG. 1
  • FIG. 2B is a plan view of a chip of the Hall element.
  • It is a block diagram showing an example of a Hall IC of a digital output type.
  • It is a schematic diagram explaining the operating principle of the magnetic field detection apparatus using the Hall element or the Hall IC according to the first embodiment of the present invention, and the magnetic flux when the position of the magnet is arranged on the left side of the Hall element or the Hall IC. Shows a line.
  • FIG. 1 It is a schematic diagram explaining the operating principle of the magnetic field detection apparatus using the Hall element or Hall IC according to the first embodiment of the present invention, when the position of the magnet is arranged in the central portion of the Hall element or Hall IC. Shows the magnetic flux lines. It is a schematic diagram explaining the operating principle of the magnetic field detection apparatus using the Hall element or the Hall IC according to the first embodiment of the present invention, in which the position of the magnet is arranged on the right side of the Hall element or the Hall IC. Magnetic flux lines are shown. It is a perspective view which shows the 1st modification of a magnetic field detection apparatus. It is a perspective view which shows the 2nd modification of a magnetic field detection apparatus. It is a perspective view which shows the 3rd modification of a magnetic field detection apparatus.
  • FIG. 13 shows a proximity sensor using a magnetic field detection device according to a second embodiment of the present invention.
  • FIG. 13(a) is a perspective view of a side on which a fixing screw is mounted
  • FIG. 13(b) is a perspective view of a detection surface side. Is. It is a front view of the proximity sensor which concerns on 2nd Embodiment. It is a perspective view of the substrate of the proximity sensor according to the second embodiment.
  • FIG. 7 is a diagram showing a magnet detecting operation of the proximity sensor in the first embodiment.
  • FIG. 8 is a diagram showing a magnet detecting operation of a conventional reed switch as Comparative Example 1.
  • FIG. 11 is a diagram in which a magnet detection operation is performed using another proximity switch in the second embodiment. It is a figure which shows the structure and operation of the conventional reed switch typically. It is a figure which shows MR sensor and its operation typically. It is a figure which shows a Hall element and its operation typically.
  • FIG. 6 is a cross-sectional view of the magnetic sensor disclosed in Patent Document 2.
  • FIG. 1 is a perspective view of a magnetic field detection apparatus 1 using a Hall element 3 according to a first embodiment of the present invention
  • FIG. 2 is a diagram for explaining the Hall element 3
  • FIG. 2B is a cross-sectional view taken along line AA of FIG. 2
  • FIG. 2B is a plan view of the chip 3d of the Hall element 3.
  • the magnetic field detection device 1 according to the first embodiment includes a Hall element 3 and one magnetic body 4 arranged horizontally close to the magnetic sensitive surface of the Hall element 3. And the Hall element 3 and the magnetic body 4 are arranged on the substrate 2.
  • the magnetic body 4 is disposed on the upper portion 3a side of the Hall element 3, and the terminals 3b of the Hall element 3 are fixed to the wiring pattern (not shown) of the substrate 2 by soldering.
  • a chip 3d is sealed in a package 3i made of resin, and externally, for example, four terminals 3b are provided as shown in FIG.
  • the chip 3d is provided with input terminals 3e and 3h to which a current is applied and output terminals 3f and 3g for generating a Hall voltage (V H ).
  • the magnetic sensitive surface of the chip 3d of the Hall element 3 is a plane in the illustrated XY direction. When a current is applied to the input terminals 3e and 3h, a Hall voltage is generated at the output terminals 3f and 3g due to the magnetic field in the Z direction.
  • the magnetic field in the Z direction is called the vertical magnetic field.
  • Hall element 3 is manufactured as follows, for example.
  • the input terminals 3e and 3h and the output terminals 3f and 3g are formed by electrodes on a compound semiconductor thin film formed on the substrate, and a substrate having a plurality of chips 3d is manufactured.
  • a chip 3d obtained by dividing a large number of chips by dicing is adhered to, for example, a lead frame, and the input terminals 3e and 3h and the output terminals 3f and 3g are connected to the internal terminals 3j by wire bonding, followed by sealing with epoxy resin or the like.
  • the Hall element 3 including the package 3i and the terminal 3b on the outside is manufactured.
  • a commercially available product may be used as the hall element 3.
  • the magnetic body 4 is arranged in the horizontal direction (X direction in FIG. 1) with respect to the magnetic sensitive surface of the Hall element 3 (XY direction in FIG. 1) via epoxy resin, air, or the like that constitutes the package 3i. It is set up.
  • the magnetic body 4 is made of a magnetic material, and a soft magnetic material such as a cold rolled steel plate (called SPCC) or pure iron can be preferably used and can have a lead shape.
  • SPCC cold rolled steel plate
  • a ferromagnetic material made of a 3d transition metal such as iron (Fe), cobalt (Co), nickel (Ni), an alloy thereof, or an oxidation of Mn-Zn ferrite or Ni-Zn ferrite is used.
  • a soft magnetic material is used, and the magnetic body 4 is formed of any of these soft magnetic materials.
  • the alloy include Fe-Ni alloy and Fe-Co alloy.
  • the Fe-Ni alloy include Fe-Ni (52 wt%).
  • the Fe—Co alloy include Fe—Co (80 wt %).
  • the magnetic body 4 may be provided so as to be in contact with the upper portion 3a of the hall element 3, but may be arranged at a predetermined interval on the upper portion 3a of the hall element 3.
  • the magnetic body 4 can be formed by bending its end, and can be pressed into the substrate 2 for insertion, that is, can be press-fitted and fixed.
  • the magnetic body 4 may be fixed by soldering to a wiring pattern provided on the back surface 2c of the substrate 2. This wiring pattern may be connected to the ground.
  • the magnetic body 4 may be a resistor forming an electric circuit, such as a jumper resistor provided on the substrate 2.
  • the hall element 3 may be the hall IC 13.
  • the Hall IC 13 including an integrated circuit connected to the Hall element 3 is provided, and the magnetic body 4 is arranged horizontally close to the magnetic sensitive surface of the Hall IC 13.
  • the Hall IC 13 is, for example, a surface mount Hall IC.
  • the terminal 13b side is mounted on the end 2b side on the front surface 2a side of the substrate 2.
  • the magnetic body 4 arranged on the upper portion 13a side of the Hall IC 13 is arranged substantially at the center of the mold resin surface side facing the terminal 13b side of the Hall IC 13. Further, the magnetic body 4 extends in the longitudinal direction (X direction) of the substrate 2 so that the gap between the magnetic body 4 and the substrate 2 becomes the height of the Hall IC 13 in the region not facing the Hall IC 13. It is set up.
  • Hall IC 13 can be of digital output type or analog output type.
  • the digital output type Hall IC 13 can be operated as a switch that is turned on and off when the output of the Hall element incorporated in the Hall IC 13 is above a certain threshold. In the following description, the Hall IC 13 is a digital output type.
  • Examples of such a digital output type Hall IC 13 include the following commercial products. Asahi Kasei Electronics Corporation: EM-1781 ROHM Co., Ltd.: BU52056 NVX Texas Instruments Incorporated: DRV5033FAQDBZR
  • FIG. 3 is a block diagram showing an example of the configuration of the digital output type Hall IC 13.
  • the Hall IC 13 (EM-1781, see Non-Patent Document 1) includes a pulse regulator 13c, a Hall element 13d, a chopper stabilizer 13e, an amplifier 13f, a Schmitt trigger and latch 13g, a CMOS inverter 13h, and a power supply terminal 13i. , A ground terminal 13j, a CMOS output terminal 13k and the like.
  • the hall element 13d is made of Si or a compound semiconductor such as InSb, InAs, GaAs.
  • the circuits other than the Hall element 13d are configured by a Si CMOS integrated circuit (CMOSIC) chip.
  • the magnetic sensitive surface of the Hall IC 13 is the magnetic sensitive surface of the Hall element 13d built in the Hall IC 13, and like the magnetic field detection device 1 shown in FIG. 1, the XY plane on the upper surface 13a side of the Hall IC 13 is present. Becomes
  • FIG. 4 to 6 illustrate the operation principle of the magnetic field detection device 1 using the Hall element 3 or the Hall IC 13 according to the first embodiment.
  • the Hall element 3 or the Hall IC 13 viewed from the surface 2a of the substrate 2 will be described with reference to FIGS.
  • the relationship between the magnetic field detection device 1 and the magnet 6 using is shown.
  • the positions of the respective magnets 6 represent the magnetic flux lines when they are arranged on the left side, the center part and the right side of the Hall element 3 or the Hall IC 13 and the magnetic body 4.
  • FIG. 4 to 6 the magnet 6 is arranged on the lower side of the substrate 2 and moves from the left side to the right side in the X direction.
  • the magnetic flux line from the N pole of the magnet 6 passes through the magnetic body 4 and the Hall element 3 is passed. Or it passes through the Hall IC 13.
  • the magnetic flux lines in the magnetic body 4 are oriented in the longitudinal direction (X direction), that is, in the horizontal direction with respect to the magnetically sensitive surface of the Hall element 3.
  • a magnetic path 8 is formed by the magnet 6, the Hall element 3, and the magnetic body 4, and the magnetic flux passes through the Hall element 3 or the Hall IC 13 in the vertical direction (Z direction). The magnetic flux density passing in the vertical direction is detected by the Hall element 3 or the Hall IC 13.
  • the magnetic field detection device 1 by disposing the magnetic body 4, it is possible to detect a magnetic field in the horizontal direction with respect to the magnetic sensitive surface of the Hall element 3 or the Hall IC 13.
  • the cross-sectional shape of the magnetic body 4 is rectangular, any shape may be used as long as the magnetic path 8 is formed, and may be linear.
  • the magnetic path 8 is formed by the magnet 6 and the Hall element 3 or the Hall IC 13 and the magnetic body 4, and the magnetic flux becomes a hole. It passes through the element 3 or the Hall IC 13 vertically (Z direction). The magnetic flux density passing in the vertical direction is detected by the Hall element 3.
  • the magnetic flux line from the N pole of the magnet 6 moves to the magnetic body 4 this time. It passes through the hall element 3. That is, the magnetic path 8 is formed by the magnet 6, the magnetic body 4, and the Hall element 3, and the magnetic flux passes through the Hall element 3 or the Hall IC 13 vertically (Z direction). The magnetic flux density passing in the vertical direction is detected by the Hall element 3 or the Hall IC 13.
  • the board 2 may be provided with a terminal for connecting the terminal 3b of the Hall element 3 to an external circuit or the like.
  • the substrate 2 may be provided with an electronic circuit such as an IC (integrated circuit) that serves as a resistor or an amplifier connected to the Hall element 3. Further, a case that covers the Hall element 3, the magnetic body 4, and the substrate 2 may be provided.
  • the magnetic field detection device 1 may include a case (not shown) that covers the substrate 2, the Hall element 3 or the Hall IC 13, and the magnetic body 4.
  • the case is made of resin or the like, and the inside of the case may be further filled with resin or the like.
  • the board 2 a printed board such as a paper epoxy board and a glass epoxy board can be used.
  • the magnetic field detection device 1 of the present invention can be used as a switch for detecting the position of the magnet 6.
  • the strength of the magnetic field due to the magnet 6, that is, the magnetic flux density is determined by a threshold value by a circuit using the Hall element 3 or the Hall IC 13 and turned ON/OFF.
  • This ON/OFF sensitivity can be adjusted by changing the length, shape, and position of the magnetic body 4, and in particular, the dimension of the magnetic body 4 in the longitudinal direction (X direction) is detected by the magnet 6 of the magnetic field detection device 1. It may be adjusted according to the range.
  • a digital output type Hall IC When a digital output type Hall IC is used as the Hall IC 13, it turns ON when a magnetic flux density equal to or higher than a predetermined magnetic flux density, that is, a threshold value or higher, is applied, and turns OFF when the magnetic flux density lower than the threshold value.
  • a predetermined magnetic flux density that is, a threshold value or higher
  • the ON and OFF outputs the open drain output of the Hall IC 13 or the CMOS output can be used.
  • the Hall IC 13 a single pole detection type Hall IC that detects the S pole or the N pole or a bipolar detection type Hall IC that detects both the S pole and the N pole can be used.
  • the magnetic field detection device 1 of the present invention is a switch having no polarity like the conventional reed switch, it is desirable to use the bipolar IC detection Hall IC 13.
  • the output terminal (not shown) is a ground (also called a ground (GND)) and an open drain output, that is, the drain of the MOSFET for output. It becomes two with the terminal.
  • a ground also called a ground (GND)
  • an open drain output that is, the drain of the MOSFET for output. It becomes two with the terminal.
  • one end of the pull-up resistor is connected to the output terminal of the open drain output, and the power source V dd supplied to the Hall IC 13 is connected to the other end of the pull-up resistor.
  • a wiring pattern is formed on the substrate 2 from the terminal 13b side of the Hall IC 13 to the output terminal (not shown).
  • this wiring pattern for example, one end of a vinyl-coated conductive wire housed in a resin tube is connected by soldering and is drawn out to the outside of a case (not shown).
  • the vinyl-coated conductor wire is composed of two conductor wires, and is pulled out to the outside of the case by a so-called two-core cable.
  • the output terminal 13k of the Hall IC 13 shown in FIG. 3 becomes the output of the CMOS inverter 13h, that is, the CMOS output.
  • the terminals required for the magnetic field detection device 1 three are required: the power supply terminal 13i to which V dd is applied, the ground terminal 13j, and the CMOS output terminal 13k, and the magnetic field detection device 0 requires three terminals. It becomes a terminal and is pulled out to the outside of the case by a so-called 3-core cable.
  • the Hall IC 13 has a CMOS output, it can be made an open drain output by an electronic circuit provided on the substrate 2. In this way, the output terminal of the magnetic field detection device 1 and the voltage, current, and output impedance between the terminals can be appropriately changed by the electronic circuit inserted between the Hall IC 13 and the output terminal according to the purpose of use.
  • the magnetic body 4 is disposed horizontally close to the magnetic sensitive surface of the Hall element 3 or the Hall IC 13, so that the magnetic sensitive surface of the Hall element 3 or the Hall IC 13 is arranged.
  • the horizontal magnetic field with respect to can be detected. Therefore, the conventional Hall element 3 or the Hall IC 13 can detect only the magnetic field in the direction perpendicular to the magnetic sensitive surface, but the magnetic body 4 approaches the magnetic sensitive surface of the Hall element 3 or the Hall IC 13 in the horizontal direction. By arranging in such a manner, the horizontal magnetic field can be detected.
  • the sensitivity of the magnetic field detection device 1 can be adjusted by changing the length, shape and position of the magnetic body 4.
  • FIG. 7 is a perspective view showing a first modified example of the magnetic field detection device 1.
  • the magnetic field detection device 1A includes a Hall element 3 or a Hall IC 13 and a magnetic body 4A arranged horizontally close to the magnetic sensitive surface of the Hall element 3 or the Hall IC 13. There is.
  • the magnetic field detection device 1A differs from the magnetic field detection device 1 of FIG. 1 in the shape of the magnetic body 4A.
  • the material and other configurations of the magnetic body 4A are the same as those of the magnetic field detection device 1, and thus description thereof will be omitted.
  • the magnetic body 4A includes one end 4a arranged on the Hall element 3 or the Hall IC 13, the other end 4c for fixing to the substrate 2 by means such as soldering or adhesion, the one end 4a and the other end. And a curved portion 4b serving as a connecting portion with 4c. That is, in the magnetic body 4A, the central portion of the one end portion 4a is arranged in the central portion of the Hall element 3 or the Hall IC 13, and the upper surface of the Hall element 3 or the Hall IC 13 and the lower surface of the magnetic body 4A are arranged to be in contact with each other. It According to the magnetic body 4A, one end 4a is connected to the other end 4c via the curved portion 4b, and the other end 4c is fixed to the substrate 2. As a result, it is possible to reduce fluctuation due to vibration or the like when detecting the magnetic field.
  • FIG. 8 is a perspective view showing a second modification of the magnetic field detection device 1.
  • the magnetic field detection device 1B includes a Hall element 3 or a Hall IC 13, and a magnetic body 4B arranged horizontally close to the magnetic sensitive surface of the Hall element 3 or the Hall IC 13.
  • the magnetic field detection device 1B differs from the magnetic field detection device 1 of FIG. 1 in the shape of the magnetic body 4B. Since the material of the magnetic body 4B and other configurations are the same as those of the magnetic field detection device 1, description thereof will be omitted.
  • the magnetic body 4B includes one end 4d arranged on the Hall element 3 or the Hall IC 13, another end 4c for fixing to the substrate 2 by means such as soldering or adhesion, one end 4d and the other end. And a curved portion 4b serving as a connecting portion with 4c.
  • the one end portion 4d of the magnetic field detection device 1B is different from the one end portion 4d of the magnetic field detection device 1A shown in FIG. 7 in that in the longitudinal direction of the magnetic body 4B, the width in the longitudinal direction changes from the curved portion 4b to the Hall element 3 or the Hall IC 13. It has a protruding shape that gradually becomes thinner toward the outside.
  • the tip of the one end 4d having the protruding shape is arranged at the center of the Hall element 3 or the Hall IC 13, and the lower surface of the tip of the one end 4d is the Hall element 3 or. It is arranged so as to contact the Hall IC 13.
  • one end 4d is connected to the other end 4c via the curved portion 4b, and the other end 4c is fixed to the substrate 2, so that the magnetic field detecting device 1 shown in FIG.
  • the magnetic path 8 is formed by the approach of the magnet 6, the one end portion 4d having the protruding shape has an action of increasing the magnetic flux density passing vertically through the Hall element 3, so The sensitivity can be improved.
  • FIG. 9 is a perspective view showing a third modification of the magnetic field detection device 1.
  • the magnetic field detection device 1C of the third modification is different from the magnetic field detection device 1 shown in FIG. 1 in that the magnetic body 4 is disposed on the back surface 2c of the substrate 2. That is, the terminal 3b side of the surface mount type Hall element 3 is mounted on the end portion 2b side of the front surface 2a side of the substrate 2, and the magnetic body 4 is disposed on the back surface 2c side of the substrate 2.
  • One end 4a of the magnetic body 4 is disposed at a position facing each other in substantially the center of the Hall element 3, and the other end 4b of the magnetic body 4 extends in the longitudinal direction of the substrate 2.
  • Other configurations and materials of the magnetic body 4 are the same as those of the magnetic field detection device 1 of FIG.
  • the shape of the magnetic body 4 may be the magnetic body used in the magnetic field detection device 1A or the magnetic body used in the magnetic field detection device 1B.
  • FIG. 10 is a schematic diagram showing the operation principle of the magnetic field detection device 1 in the third modified example. Similar to the magnetic field detection device 1, when the magnet 6 approaches the magnetic field detection device 1C, the magnetic field detection device 1C forms a magnetic path 8 by the magnet 6 and the Hall element 3 or the Hall IC 13 and the magnetic body 4, and the magnetic flux becomes a hole.
  • the Hall element chip 3d in the element 3 or the Hall element chip 13d in the Hall IC 13 passes vertically (Z direction). The magnetic flux density passing through the Hall element chips 3d and 13d in the vertical direction is detected by the Hall element 3 or the Hall IC 13.
  • FIG. 11 is a perspective view showing a fourth modified example of the magnetic field detection device 1.
  • a surface mount type Hall element 3 or Hall IC 13 and one first magnetic body 4 are disposed on the front surface 2a side of a substrate 2, and the other second magnetic body is provided on the back side 2c of the substrate 2. 24 are provided. Further, the position where the Hall element 3 or the Hall IC 13 is placed is arranged not at the end 2b of the substrate 2 of the magnetic field detection device 1 shown in FIG. 1 but at a position L apart from the end 2b of the substrate 2. There is.
  • the end portion 24 a of the second magnetic body 24 extends in the longitudinal direction of the substrate 2 from the end portion 2 b of the substrate 2 to a position facing the central portion of the Hall element 3 or the Hall IC 13.
  • the material of the second magnetic body 24 may be the same as that of the first magnetic body 4 of the magnetic field detection device 1 of FIG.
  • the shapes of the first magnetic body 4 and the second magnetic body 24 may be the first magnetic body 4A used in the magnetic field detection apparatus 1A or the first magnetic body 4B used in the magnetic field detection apparatus 1B.
  • FIG. 12 is a schematic diagram showing the operation principle of the magnetic field detection device 1 in the fourth modified example.
  • the magnet 6 is arranged so as to move in the X direction on the lower side of the substrate 2 of the magnetic field detection device 1D, the horizontal magnetic flux generated from the N pole of the magnet 6 is generated in the horizontal direction of the second magnetic body 24.
  • this magnetic flux passes vertically (Z direction) through the Hall element chip 3d in the Hall element 3 or the Hall element chip 13d in the Hall IC 13 and becomes the horizontal magnetic flux of the first magnetic body 4
  • a magnetic path 8 is formed such that the horizontal magnetic flux of (3) is directed to the S pole of the magnet 6.
  • the magnetic flux density passing through the Hall element 3 or the Hall IC 13 in the vertical direction is detected by the Hall element 3 or the Hall IC 13.
  • the sensitivity of the magnetic field detection device 1D can be adjusted by changing the length, shape and position of the first magnetic body 4 and the second magnetic body 24 as in the magnetic field detection devices 1, 1A and 1B.
  • the magnetic sensitive direction is the horizontal direction of the magnetic field detection devices 1, 1C, 1D, which is the same magnetic sensitive direction as the conventional reed switch.
  • the magnetic field detection devices 1, 1C, 1D of the present invention even though the Hall IC 13 is used, the magnetic sensitive direction is horizontal, and it is possible to easily replace the conventional reed switch.
  • the lead-shaped magnetic body 4 or the first magnetic body 4 and the second magnetic body 4 are arranged in the longitudinal direction of the magnetic field detectors 1, 1C, 1D from a position close to the Hall IC 13. Since the magnetic body 24 is provided, the operation width is wider than that of the MR sensor, and the position adjustment is easy like the conventional reed switch.
  • the magnetic field detectors 1, 1C, 1D of the present invention since no mechanically movable parts such as the reed of the conventional reed switch are used, the sensitivity is hard to change due to impact, and due to arc discharge or the like. It has the feature that it has a long life without a decrease in life.
  • FIG. 13A is a perspective view of the proximity sensor 50 with the fixing screw 90 mounted
  • FIG. 13B is a perspective view of the proximity sensor 50 on the detection surface 51a side
  • FIG. 14 is a front view of the proximity sensor 50
  • FIG. 15 is a perspective view showing the substrate 63 of the proximity sensor 50
  • FIG. 16 is a vertical sectional view of the proximity sensor 50.
  • the proximity sensor 50 includes a magnetic field detection device 61, a substrate 63 on which the magnetic field detection device 61 is disposed, and And a case 70 that covers the.
  • the proximity sensor 50 is, for example, formed in a rod shape, has a detection unit 51 in which a magnetic field detection device 61 similar to that of the first embodiment and its modification is arranged on one side L in the longitudinal direction, and the magnetic field from the other side R.
  • the external cord 62 of the detection device 61 extends in the longitudinal direction.
  • the proximity sensor 50 includes a substrate 63 having a magnetic field detection device 61 fixed to one side L, a case 70 that accommodates one side L of the substrate 63, a filled resin portion 81 filled in the case 70, and the other side of the substrate 63.
  • a molding resin portion 82 which is embedded in the side R and is integrally molded on the other side R of the case 70, and a fixing screw 90 for mounting on a detection target portion (not shown) are provided.
  • the magnetic field detection device 61 is arranged on one side L, and the other side R has a connecting portion 65 to which an external cord 62 is connected by soldering.
  • the Hall IC 13, which constitutes the magnetic field detection device 61, the magnetic body 4 (and the second magnetic body 24), and the connecting portion 65 are arranged on the front surface side of the substrate 63, and further the IC (integrated circuit) is provided as necessary.
  • An appropriate circuit is provided by various electronic components such as a circuit), a resistor, a capacitor, and the like.
  • the wiring pattern or the like provided on the substrate 63 may be provided not only on the front surface side but also on the back surface.
  • the substrate 63 can be a single-sided substrate having a pattern formed on one side or a double-sided substrate having a pattern formed on both sides.
  • the substrate 63 is provided with a recess 66 that is recessed in the width direction on the other side R in the longitudinal direction.
  • the concave portion 66 on the other side R corresponds to a portion where the fixing screw 90 is arranged, and is provided between the detecting portion 51 and the connecting portion 65.
  • a plurality of connecting portions 65 are provided on one surface of the other side R of the substrate 63 at different positions.
  • the external cord 62 has a plurality of wires, and each is connected to different connecting portions 65.
  • the plurality of connecting portions 65 are arranged apart from each other in the direction intersecting the longitudinal direction.
  • the magnetic field detection device 61 can use the magnetic field detection devices 1, 1C, 1D according to the first embodiment.
  • the shape of the first magnetic body 4 and/or the second magnetic body 24 may be the first magnetic body 4A used in the magnetic field detection apparatus 1A or the first magnetic body 4B used in the magnetic field detection apparatus 1B.
  • the dimension of the magnetic body 4 in the longitudinal direction (X direction) may be set to be approximately the same as the length of the two reed pieces 102 and 103 when used in place of the conventional reed switch 100 shown in FIG. Good. This dimension is, for example, about 4 to 20 mm.
  • a digital output type or analog output type Hall IC can be used as the Hall IC 13.
  • the circuit configuration can be such that the output terminals are turned ON/OFF at the two terminals or the three terminals, and can be operated in the same manner as a conventional proximity sensor using a reed switch. it can.
  • the case body 70A includes an outer wall portion 71, a substrate support portion 72, an end wall 73, and a protruding portion 75.
  • the case 70 is a hollow member that is open on the detection surface 51a side of the detection unit 51, and is molded of hard resin.
  • the case 70 integrally includes an outer wall portion 71 having a substantially U-shaped cross section and extending in the longitudinal direction, and a substrate support portion 72 for positioning the substrate 63 disposed inside the outer wall portion 71. After the substrate 63 is accommodated in the case 70, the filling resin is filled and solidified from the opening side of the case 70, so that the filling resin portion 81 is formed.
  • the curved surface of the filled resin portion 81 constitutes the detection surface 51a.
  • the filling resin portion 81 is formed of a soft resin and is preferably a resin softer than at least the hard resin used for the case 70.
  • the molding resin portion 82 is made of a hard resin, for example, a hard thermoplastic resin can be used, and a resin harder than at least the filling resin is suitable.
  • the fixing screw 90 is provided between the detecting portion 51 and the connecting portion 65, has a head portion 93 on one end side, and protrudes axially from the head portion 93. And a rotary shaft 92 having a circular cross section and having a tapered shape that expands in diameter toward the end side.
  • the rotating shaft 92 is inserted into the through hole 75d of the support surface 75c of the case 70, and is rotatably embedded in the molded resin portion 82 while being immovable in the axial direction.
  • a hexagonal hole or the like is provided in the head 93 in the axial direction, and a circumferential inclined portion 94 that projects in a plurality of positions around the axis and that increases the distance from the rotating shaft 92 in the circumferential direction is provided in the periphery.
  • the hexagonal hole of the head portion 93 is locked by a tool such as a wrench and is rotatably formed. By rotating the head 93, it is possible to increase or decrease the position of the surface of each circumferentially inclined portion 94 at a predetermined position in the mounted state.
  • the proximity sensor 50 is used by being attached to an appropriate detected part such as near the operating part of a pneumatic device.
  • the groove provided in the detected portion for providing the proximity sensor 50 has an inner width wider than, for example, the opening of the groove, the proximity sensor 50 is passed through the opening and inserted into the inside, and the fixing screw It can be fixed inside the groove by 90.
  • a substrate manufacturing method Next, a method of manufacturing the proximity sensor 50 will be described.
  • a component including the Hall IC 13 and the magnetic body 4 forming the magnetic field detecting device 61 is mounted between the fixing portion 64 and the recess 66 on one side L of the substrate 63 shown in FIG. 15 by soldering or the like.
  • the end portion of the external cord 62 is connected to the connecting portion 65 on the other side R of the substrate 63. Thereby, the magnetic field detection device 61 and the external cord 62 are connected.
  • the molding resin portion 82 is molded integrally with the case 70 by molding resin such as hard thermoplastic resin. As shown in FIG. 14, the molding resin portion 82 has the other side R of the substrate 63 protruding from the case 70 and the end portion of the external cord 62 embedded therein. Further, the molded resin portion 82 is also filled in the protruding portion 75 of the case 70, and is integrally fixed to the substrate supporting portion 72 and the protruding portion 75.
  • the magnetic sensitive direction is the proximity sensor 50. It becomes the horizontal direction of the longitudinal direction, and the magnetic sensitive direction is the same as the conventional reed switch. According to the proximity sensor 50, although the Hall IC 13 is used, the magnetic field sensing direction is horizontal, and the proximity sensor using the conventional reed switch can be easily replaced.
  • the lead-shaped magnetic body 4 or the first magnetic body 4 and the second magnetic body 24 are arranged in the longitudinal direction of the proximity sensor 50 from a position close to the Hall IC 13. ,
  • the operation width is wider than that of the MR sensor, and the position adjustment is easy like the conventional reed switch.
  • the proximity sensor 50 of the present invention since mechanical moving parts such as the reed of the conventional reed switch are not used, the sensitivity is unlikely to change due to impact, and there is no reduction in life due to arc discharge or the like. The feature is that it has a long life. Therefore, according to the proximity sensor 50, it is possible to provide the proximity sensor 50 in which the magnetic sensitive direction is the horizontal direction, the operation width is wide, the position can be easily adjusted, the sensitivity is not easily changed by the impact, and the life is long. ..
  • the present invention will be described in detail with reference to Examples.
  • the proximity sensor 50 was configured by the magnetic field detection device 1 including the magnetic body 4A shown in FIG.
  • Hall IC 13 A digital output type (model number: BU52097GWZ) manufactured by Rohm was used. It has the characteristics of bipolar detection, the shape is lateral 0.8 mm ⁇ lateral 0.8 mm ⁇ height 0.4 mm, and the operating magnetic flux density is ⁇ 15 mT.
  • Magnetic body 4A SPCC was used as a material, and the shape was 7 mm in width ⁇ 1.5 mm in length ⁇ 0.5 mm in thickness.
  • the magnetic body 4A shown in FIG. 7 is for fixing to the substrate 2 (see FIG.
  • the magnet 6 to be detected is a ring type neodymium magnet having an outer diameter of 5.4 mm, an inner diameter of 2.5 mm, and a thickness of 2 mm.
  • FIG. 17 shows the magnet detecting operation of the proximity sensor 50 in the first embodiment
  • FIG. 18 shows the magnet detecting operation of the conventional reed switch as the first comparative example.
  • the horizontal axis in FIGS. 17 and 18 indicates the position of the magnet 6 in the X-axis direction
  • the vertical axis indicates the position of the magnet 6 in the negative Y-axis direction (see X-axis and Y-axis in FIGS. 4 to 6). ).
  • the X-axis position ⁇ 8 mm to ⁇ 5 mm is a region where the magnet 6 is arranged on the left side of the Hall IC 3 and the magnetic body 4 (see FIG. 4).
  • Approximately -3 mm to 3 mm is a region where the magnet 6 is arranged below the Hall IC 3 and the magnetic body 4 (see FIG. 5).
  • 3 mm to 7 mm is a region where the magnet 6 is arranged on the right side of the Hall IC 3 and the magnetic body 4 (see FIG. 6). From this, it can be seen that in Example 1, the proximity sensor 50 can detect the magnet 6 within the range of ⁇ 3 to 3 mm in the X-axis direction and up to 4 mm in the Y-axis direction.
  • the magnet 6 can detect up to 4 mm in the Y-axis direction within a range of ⁇ 3 to 3 mm in the X-axis direction.
  • the proximity sensor 50 according to the first embodiment has a magnetic sensing direction in the horizontal direction as in the conventional reed switch, has a wider operation range than the MR sensor, and has a detection operation equivalent to that of the conventional reed switch. I found out.
  • the proximity sensor 50 different from that of the first embodiment is configured by the magnetic field detection device 1 including the magnetic body 4B shown in FIG.
  • Hall IC13 The same Hall IC13 as in Example 1 was used.
  • Magnetic body 4B SPCC is used as a material, the shape is horizontal 6.4 mm ⁇ longitudinal 1.5 mm ⁇ thickness 0.5 mm, and a region 4d having a semicircular pointed tip of ⁇ 0.5 mm and a curved portion 4b.
  • the end portion 4c for fixing to the substrate 12 by means such as soldering or adhesion is provided.
  • Substrate 2 Width 20 mm x length 4 mm x thickness 0.5 mm.
  • the magnet 6 to be detected is a ring type neodymium magnet having an outer diameter of 5.4 mm, an inner diameter of 2.5 mm, and a thickness of 2 mm.
  • the magnetic body 4B is arranged such that the center of the semicircular portion of the tip ⁇ 0.5 mm of the region 4d is aligned with the central portion of the Hall IC 3, and the upper surface of the Hall IC 3 and the lower surface of the magnetic body 4 are in contact with each other.
  • FIG. 19 shows a magnet detecting operation of another proximity sensor 50 in the second embodiment. Comparing FIG. 19 with FIG. 17, which is the magnet detection operation of the first embodiment, a region where the magnet 6 is disposed on the left side of the Hall IC 3 and the magnetic body 4 (see FIG. 4), and the magnet 6 is the Hall IC 3 and the magnetic body 4 are shown. 4 (see FIG. 5) and the region where the magnet 6 is disposed on the right side of the Hall IC 3 and the magnetic body 4 (see FIG. 6) in both the X-axis direction and the Y-axis direction. Moreover, the range in which the magnet is detected is wide. From this, it is understood that the sensitivity of the proximity sensor 50 can be adjusted by the shape and position of the magnetic body 4B.
  • the Hall IC 13 has been described as a bipolar detection type, but it is needless to say that the Hall IC 13 can be a unipolar detection type that detects the S pole or the N pole. be able to. Further, the material and shape of the first magnetic body 4 or the first magnetic body 4 and the second magnetic body 24 may be appropriately selected according to the installation location of the proximity switch.
  • the magnetic field detectors 1, 1C, 1D have been described as ON and OFF switches using the digital Hall IC 13, but the Hall IC 13 is used as an analog output to detect the magnetic field detectors 1, 1C, The magnetic flux density around 1D may be measured.
  • Magnetic field detection device 2 Substrate 2a: Substrate front surface 2b: Substrate end portion 2c: Substrate back surface 3: Hall element 3a: Upper part 3b: Terminal 3d: Chip 3e, 3h: Input Terminals 3f, 3g: Output terminal 3i: Package 3j: Internal terminals 4, 4A, 4B: First magnetic body 6: Magnet 8: Magnetic path 13: Hall IC 13a: Upper part of Hall IC 13b: Hall IC terminal 13c: Pulse regulator 13d: Hall element 13e: Chopper stabilizer 13f: Amplifier 13g: Schmitt trigger and latch 13h: CMOS inverter 13i: Power supply terminal 13j: Ground terminal 13k: CMOS output terminal 24: 2nd magnetic body 50: Proximity sensor 51: Detection part 51a: Detection surface 61: Magnetic field detection device 62: External code 63: Board 64: Fixed part 65: Connection part 66: Recessed

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Magnetic Variables (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention concerne un dispositif de détection de champ magnétique et un capteur de proximité comprenant le dispositif de détection de champ magnétique, dont une direction magnétosensible est une direction horizontale, qui présente une grande largeur de fonctionnement pour faciliter le réglage de position, dont la sensibilité varie peu, même en cas d'impact, et qui a une longue durée de vie, un dispositif de détection de champ magnétique 1 étant formé à partir d'un élément à effet Hall 3 et d'un corps magnétique 4 qui est disposé à proximité de l'élément à effet Hall 3 et qui détecte un champ magnétique dans la direction horizontale par rapport à une surface magnétosensible de l'élément à effet Hall 3. Le corps magnétique peut être disposé sur un côté de partie supérieure et/ou un côté de partie inférieure de la surface magnétosensible de l'élément à effet Hall 3. L'élément à effet Hall 3 peut être remplacé par un circuit intégré à effet Hall 13 pour configurer un dispositif de détection de champ magnétique. Le dispositif de détection de champ magnétique utilisant l'élément à effet Hall 3 et le circuit intégré à effet Hall 13 peut en outre comprendre un boîtier qui recouvre le dispositif de détection de champ magnétique pour configurer un capteur de proximité.
PCT/JP2019/002082 2019-01-18 2019-01-23 Dispositif de détection de champ magnétique comprenant un élément à effet hall ou un circuit intégré à effet hall et capteur de proximité comprenant un dispositif de détection de champ magnétique WO2020148915A1 (fr)

Priority Applications (1)

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CN201980000364.0A CN111712717A (zh) 2019-01-18 2019-01-23 使用霍尔元件或霍尔ic的磁场检测装置及使用磁场检测装置的接近传感器

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JP2019007386A JP2020118469A (ja) 2019-01-18 2019-01-18 ホール素子又はホールｉｃを用いた磁界検出装置及び磁界検出装置を用いた近接センサ
JP2019-007386 2019-01-18

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JPS5847781U (ja) * 1981-09-29 1983-03-31 日本航空電子工業株式会社 磁気検知器用コンセントレ−タ
JPS59223026A (ja) * 1983-05-31 1984-12-14 Matsushita Electric Works Ltd 磁気近接スイツチ
JP2004158668A (ja) * 2002-11-07 2004-06-03 Asahi Kasei Corp ハイブリッド磁気センサ及びその製造方法
WO2009048018A1 (fr) * 2007-10-11 2009-04-16 Alps Electric Co., Ltd. Détecteur magnétique
US20110309829A1 (en) * 2009-02-10 2011-12-22 Uwe Loreit Assembly for measuring at least one component of a magnetic field
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