WO2020132804A1 - 电子器件及其制作方法 - Google Patents

电子器件及其制作方法 Download PDF

Info

Publication number
WO2020132804A1
WO2020132804A1 PCT/CN2018/123100 CN2018123100W WO2020132804A1 WO 2020132804 A1 WO2020132804 A1 WO 2020132804A1 CN 2018123100 W CN2018123100 W CN 2018123100W WO 2020132804 A1 WO2020132804 A1 WO 2020132804A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic device
rigid substrate
sacrificial layer
manufacturing
functional units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/123100
Other languages
English (en)
French (fr)
Inventor
袁泽
康佳昊
吴宗达
管曦萌
魏鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Royole Technologies Co Ltd
Original Assignee
Shenzhen Royole Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Royole Technologies Co Ltd filed Critical Shenzhen Royole Technologies Co Ltd
Priority to CN201880097592.XA priority Critical patent/CN113169033A/zh
Priority to PCT/CN2018/123100 priority patent/WO2020132804A1/zh
Publication of WO2020132804A1 publication Critical patent/WO2020132804A1/zh
Priority to US17/353,143 priority patent/US20210315094A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0277—Bendability or stretchability details
    • H05K1/028—Bending or folding regions of flexible printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0108—Transparent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0112—Absorbing light, e.g. dielectric layer with carbon filler for laser processing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0133—Elastomeric or compliant polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed

Definitions

  • the invention relates to the field of electronic technology, in particular to an electronic device and a manufacturing method thereof.
  • the manufacturing method of the existing electronic device is to form a patterned wire on a flexible substrate, and then fix the chip on the substrate by transferring a stamp to connect with the wire.
  • this manufacturing method is incompatible with existing manufacturing technologies such as semiconductors and display panels, resulting in low production efficiency.
  • the present invention provides an electronic device with high production efficiency and a manufacturing method thereof.
  • the present invention provides a method for manufacturing an electronic device, which includes the following steps:
  • the rigid substrate is removed to produce the electronic device.
  • the present invention provides an electronic device manufactured by the above-described method of manufacturing an electronic device.
  • the electronic device includes a plurality of functional units arranged at intervals and an elastic layer covering the functional units.
  • the embodiment of the invention provides an electronic device and a manufacturing method thereof.
  • the manufacturing method of the electronic device of the present invention by providing a rigid substrate; disposing the electronic device to be peeled on the rigid substrate; and removing the rigid substrate to produce the electronic device, thereby based on the removal of the rigid substrate.
  • the mass production of electronic devices can be realized on the basis of the existing mature display panel technology, and the production efficiency is improved.
  • FIG. 1 is a flowchart of a method for manufacturing an electronic device provided by the first embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the manufacturing process of the electronic device provided by the first embodiment of the present invention.
  • FIG. 3 is a flowchart of a method for manufacturing an electronic device provided by a second embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the manufacturing process of the electronic device provided by the second embodiment of the present invention.
  • FIG. 5 is a flowchart of a method for manufacturing an electronic device provided by a third embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the manufacturing process of the electronic device provided by the third embodiment of the present invention.
  • FIG. 1 is a flowchart of a method for manufacturing an electronic device according to an embodiment of the present invention.
  • FIG. 2 is a process for manufacturing an electronic device according to an embodiment of the present invention. Schematic diagram of the process.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • step S101 a rigid substrate is provided.
  • the rigid substrate 10 may be, but not limited to, a glass substrate, a metal substrate, or a ceramic substrate.
  • the rigid substrate 10 is a thin glass substrate, so as to facilitate the rapid separation of the electronic device 1 from the rigid substrate 10 after fabrication.
  • the glass substrate is, for example, but not limited to soda lime glass, alkali-free glass, phosphate-based glass, or quartz.
  • the rigid substrate 10 is used to support the electronic device 1 during the manufacturing process of the electronic device 1.
  • step S103 an electronic device to be peeled is provided on the rigid substrate.
  • the setting of the electronic device 1 to be stripped on the rigid substrate 10 specifically includes:
  • the side of the functional unit 3 facing away from the rigid substrate 10 is covered with an elastic layer 5 to manufacture the electronic device 1 to be peeled off.
  • the arrangement of a number of functional units 3 arranged at intervals on the rigid substrate 10 specifically includes:
  • a base layer 30 and a number of functional devices 32 arranged at intervals are sequentially arranged;
  • a plurality of spaced-apart bases 31 and functional devices 32 are sequentially arranged on the rigid substrate 10 to produce a number of spaced-apart functional units 3; or
  • a plurality of functional devices 32 arranged at intervals are arranged on the rigid substrate 10 to produce a plurality of functional units 3 arranged at intervals.
  • the existing patterning process may be used to pattern the base layer 30.
  • the base layer 30 performs photolithography and etching with a plurality of the functional devices 32 as masks or with a separate mask that is stacked with the functional devices 32.
  • a layer of photoresist is coated on several of the functional devices 32.
  • the action light is projected on the reticle, and the photoresist is exposed, developed, etc., so that the base layer 30 exposed to the opposite sides of the photoresist is etched to obtain a plurality of spaced-apart arrangements
  • the base 31, that is, a plurality of the functional units 3 arranged at intervals on the rigid substrate 10.
  • the manufacturing method before the electronic device to be stripped is provided on the rigid substrate, the manufacturing method further includes:
  • the sacrificial layer 20 is formed on the rigid substrate 10.
  • the sacrificial layer 20 and the rigid substrate 10 are stacked, and the electronic device 1 to be peeled on the rigid substrate 10 specifically includes:
  • the elastic layer 5 is formed on the sacrificial layer 20, and the elastic layer 5 is wrapped around the functional units 3 arranged at intervals to manufacture the electronic device 1 to be peeled off.
  • the electronic device 1 includes several functional units 3 arranged at intervals and an elastic layer 5 covering the several functional units 3.
  • the peripheral side of the elastic layer 5 is in contact with and flush with the peripheral side of the sacrificial layer 20, that is, the peripheral side of the elastic layer 5 and the peripheral side of the sacrificial layer 20 are on the same plane.
  • the elastic layer 5 contains an elastomer.
  • the elastomer is preferably a material whose internal polymer chain or lattice structure can be stretched under the action of external force.
  • the elastomer is, for example, but not limited to one of natural rubber, synthetic rubber, thermoplastic elastomer, or a combination thereof.
  • the natural rubber is, for example, polyisoprene.
  • the synthetic rubber includes, but is not limited to styrene-butadiene rubber, cis-butadiene rubber, neoprene rubber, nitrile rubber, butyl rubber, or silicone rubber.
  • the silica gel is, for example, polydimethylsiloxane (PDMS).
  • thermoplastic elastomer includes, but is not limited to, styrene block copolymer, thermoplastic olefin, thermoplastic vulcanizate, thermoplastic polyurethane, thermoplastic copolyester, or thermoplastic polyamide.
  • the formation of the functional units 3 arranged at intervals on the sacrificial layer 20 specifically includes:
  • a base layer 30 and several functional devices 32 arranged at intervals are sequentially arranged;
  • a plurality of spaced-apart substrates 31 and functional devices 32 are sequentially arranged on the sacrificial layer 20 to produce a number of spaced-apart functional units 3; or
  • a plurality of functional devices 32 arranged at intervals are arranged on the sacrificial layer 20 to produce a plurality of functional units 3 arranged at intervals.
  • the base layer 30 can be optionally, but not limited to, deposited on the sacrificial layer 20 by deposition, coating, or the like.
  • the sacrificial layer 20 is formed on the rigid substrate 10 by coating, vapor deposition, epitaxy, and the like.
  • the base layer 30 and the sacrificial layer 20 are stacked.
  • the sacrificial layer 20 and the rigid substrate 10 are stacked, and the peripheral side of the sacrificial layer 20 and the rigid substrate 10 are located on the same plane.
  • each functional unit 3 includes a substrate 31 and a functional device 32 disposed on the substrate 31, and a space 301 is formed between two adjacent substrates 31 and the sacrificial layer 20.
  • the substrate 31 and the functional device 32 are stacked.
  • the substrate 31 may be made of a transparent material.
  • the substrate 31 may be a flexible substrate or a rigid substrate.
  • the substrate 31 includes, but is not limited to, polyimide (PI), colorless transparent polyimide (Colorless Polyimide, CPI), polyethylene terephthalate (PET) , Polyamide (PA), polycarbonate (PC), polyethersulfone (PES), polyethylene naphthalate (PEN), polymethyl methacrylate ( Polymethylmethacrylate (PMMA), cycloolefin copolymer (COC), cycloolefin polymer (COP), glass, silicon, or a combination thereof.
  • the substrate 31 is a flexible substrate, and the elasticity of the substrate 31 is less than the elasticity of the elastic layer 5.
  • each functional unit 3 after being separated from the rigid substrate 10 has elasticity, and the distance between two adjacent functional units 3 increases when the electronic device 1 is stretched.
  • each functional unit 3 includes only the functional device 32, that is, the substrate 31 may be omitted.
  • the functional device 32 includes, but is not limited to a microchip and a communication bus.
  • the microchip is an electronic device with a specific function.
  • the microchip is, for example, but not limited to an electronic device having a processing function, a storage function, a calculation function, a display function, a sensing function, or a communication function.
  • the microchips include but are not limited to: circuits directly fabricated on the substrate 31, packaged microchips transferred onto the substrate 31, and unpackaged microchips transferred onto the substrate 31.
  • the communication bus is used to realize the communication connection between these electronic devices.
  • the electronic device 1 is, for example, a display panel.
  • the display panel is, for example, but not limited to, a liquid crystal display (Liquid Crystal) (LCD) panel, a quantum dot display (Quantum Dot Light Emitting Diodes, QLED) panel, an electronic paper (E-paper Display, EPD), and a touch screen (Touch panel), flexible solar cell (Page, View, PV) panel, radio frequency tag (Radio Frequency Identification, RFID) and other products or components with specific functions.
  • LCD liquid crystal display
  • QLED Quantum Dot Light Emitting Diodes
  • EPD electronic paper
  • Touch panel touch screen
  • flexible solar cell (Page, View, PV) panel radio frequency tag (Radio Frequency Identification, RFID) and other products or components with specific functions.
  • the elastic layer 5 is formed on the sacrificial layer 20, and the elastic layer 5 is coated with the functional units 3 arranged at intervals to prepare the to-be-peeled Electronic device 1, including:
  • the liquid glue is coated on the sacrificial layer 20 and the plurality of functional units 3, and cured, so that the elastic layer 5 is filled in the space 301, and the elastic layer 5 covers several
  • the substrate 31 and several functional devices 32 are used to manufacture the electronic device 1 to be peeled off.
  • the elastic layer 5 is formed on the sacrificial layer 20, and the elastic layer 5 is coated with the functional units 3 arranged at intervals to obtain the electronic device 1 to be peeled off. This includes:
  • the elastic layer 5 and the sacrificial layer 20 and the functional unit 3 are laminated, pressed/heated to be bonded, so that the elastic layer 5 is attached to the sacrificial layer 20 and covered
  • the substrate 31 and the functional device 32 are used to manufacture the electronic device 1 to be stripped.
  • the elastic layer 5 is formed on the sacrificial layer 20, and the elastic layer 5 is coated with the functional units 3 arranged at intervals to obtain the electronic device 1 to be peeled, This includes:
  • An elastic layer 5 containing an elastomer is deposited on the sacrificial layer 20 and the plurality of functional units 3, so that the elastic layer 5 is formed on the sacrificial layer 20, and covers the substrate 31 and all
  • the functional device 32 is used to manufacture the electronic device 1 to be stripped.
  • the deposition process includes, but is not limited to, chemical vapor deposition, pulsed laser deposition, and atomic layer deposition.
  • the elastic layer 5 can also be formed on the sacrificial layer 20 through a laminating and casting process, and the elastic layer 5 covers several functional units 3.
  • the substrate 31 can be used for supporting and protecting functions when the electronic device 1 is in a deformed state, such as stretching or bending ⁇ 32 ⁇ The device 32. Since the elastic layer 5 fills the space 301 between the substrate 31 and covers the substrate 31 and the functional device 32, the elastic layer 5 can provide elasticity for the electronic device 1 when bent or stretched, so that the electronic The deformation of the device 1 is more flexible, and ensures that the functional device 32 is separated from the rigid substrate 10 to avoid damage to the electronic device 1, thereby protecting the electronic device 1. It can be understood that the width of the space 301 can be designed according to the size required for the patterning process of the functional device 32 and the circuit board density of the functional device 32.
  • step S105 the rigid substrate is removed to manufacture the electronic device.
  • the removing the rigid substrate 10 to manufacture the electronic device specifically includes: dissolving the rigid substrate 10 with a dissolving agent to manufacture the electronic device 1.
  • the rigid substrate 10 may include, but is not limited to, rigid materials such as metal and hard plastic.
  • the dissolving agent may be, but not limited to, an acidic solvent, an alkaline solvent, or an amphoteric solvent.
  • the metal may preferably be a metal material that is easily soluble in acid or alkali, such as aluminum, potassium, and the like.
  • the hard plastic is preferably high temperature resistant polytetrafluoroethylene, modified polystyrene, reinforced linear polyester, polyimide, modified polyphenylene ether and the like.
  • removing the rigid substrate 10 to manufacture the electronic device 1 includes:
  • a release process is performed to separate the electronic device 1 from the rigid substrate 10.
  • the release process is performed to separate the electronic device 1 from the rigid substrate 10, which specifically includes:
  • Laser ablation of the elastic layer 5 and/or the base 31 is used to separate several functional units 3 from the rigid substrate 10 together with the elastic layer 5.
  • the electronic device 1 is separated from the rigid substrate 10, and the back surface of the rigid substrate 10 can be irradiated with laser scanning.
  • the rigid substrate 10 has light permeability, laser light is irradiated on the base 31 and the elastic layer 5 between the rigid substrate 10 and the electronic device 1.
  • the elastic layer 5 may be doped with a laser absorber, so that the elastic layer 5 can absorb laser light of a specific wavelength, so the absorption rate of the laser by the elastic layer 5 is greatly improved and the elastic layer 5 is separated from the rigid substrate 10.
  • the laser can be scanned from one end of the rigid substrate 10 to the other end, so that the rigid substrate 10 is detached from the base 31 and the elastic layer 5.
  • the laser may be a gas laser or a solid-state laser.
  • the solid-state laser is, for example, a semiconductor laser.
  • the gas laser is, for example, but not limited to, excimer laser, Nd-YAG laser, Ar laser, CO 2 laser, He-Ne laser, or the like.
  • a laser is used to ablate the elastic layer 5 or the substrate 31 at the same time.
  • the laser absorption rate of the substrate 31 is substantially the same as the laser absorption rate of the elastic layer 5.
  • the substrate 31 and the elastic layer 5 are simultaneously laser ablated by a thin layer, and the ablated substrate 31 and the elastic layer 5 are located on the same plane on the side near the ablated surface , So that the ablated substrate 31 and the elastic layer 5 together constitute the electronic device 1.
  • the thickness of the substrate 31 and the thickness of the elastic layer 5 are both greater than the laser ablation depth.
  • the laser absorption rate of the substrate 31 and the laser absorption rate of the elastic layer 5 may be different, so that the ablated substrate 31 and the elastic layer 5 are located on different planes on the side near the ablated surface.
  • the elastic layer 5 or the substrate 31 is ablated by laser.
  • the adhesive force between the elastic layer 5 and the rigid substrate 10 is smaller than the adhesive force between the functional unit 3 and the rigid substrate 10, the base 31 is ablated by laser.
  • the elastic layer 5 uses an elastic body with low adsorption force, such as PDMS. Specifically, the laser scans and irradiates only the area where the base 31 contacts the rigid substrate 10, and by applying a mechanical external force on the elastic layer 5, the ablated base 31 and the elastic layer 5 can be peeled off the rigid substrate 10 together, thereby The ablated substrate 31, the functional device 32 and the elastic layer 30 together constitute the electronic device 1.
  • the ablated substrate 31 and the elastic layer 5 are located on different planes on the side close to the ablated surface.
  • the adhesive force between the elastic layer 5 and the rigid substrate 10 is greater than the adhesive force between the functional unit 3 and the rigid substrate 10, the elastic layer 5 is ablated by laser.
  • removing the rigid substrate 10 to manufacture the electronic device 1 includes:
  • the sacrificial layer 20 is removed to separate the electronic device 1 from the rigid substrate 10.
  • the elastic layer 5 of the electronic device 1 and several bases 31 are located on the same plane on the side close to the rigid substrate. Removal of the sacrificial layer can be achieved by, but not limited to, dissolution or etching.
  • the removing the sacrificial layer 20 to separate the electronic device 1 from the rigid substrate 10 specifically includes:
  • a dissolving agent is used to dissolve the sacrificial layer 20 to separate the electronic device 1 from the rigid substrate 10.
  • the sacrificial layer 20 cannot be The solution of the electronic device 1 during the preparation process reacts, and the withstand temperature of the sacrificial layer 20 is higher than the highest temperature of the electronic device 1 in the manufacturing process, so as to avoid the sacrificial layer 20 from being damaged and affecting the subsequent electronic device 1 and the Separation of rigid substrate 10.
  • the sacrificial layer 20 includes, but is not limited to, one of inorganic salt compounds, inorganic oxides, organic polymer compounds, and metals, or a combination thereof.
  • the dissolving agent is a liquid. In other embodiments, the dissolving agent may also be a gas.
  • the dissolving agent includes, but is not limited to, at least one of water, acid, alkali, organic solution, developer, or a combination thereof.
  • the inorganic salt compounds are selected from materials that are easily tolerated by water, such as potassium, sodium, ammonium, nitrate, acetate, etc.; the inorganic oxides are selected from those that are easily soluble in acid or alkali Materials, such as alkaline oxides, acidic oxides, or amphoteric oxides; the organic polymer compound is selected from materials that are easily soluble in water, organic solvents, or developers, such as epoxy resin; Used in acid or alkali metal materials, such as aluminum and potassium.
  • the removing the sacrificial layer 20 to separate the electronic device 1 from the rigid substrate 10 specifically includes:
  • the sacrificial layer 20 is ablated by laser to peel off the electronic device 1 from the rigid substrate 10.
  • the rigid substrate 10 is made of a transparent material, so that the laser can illuminate the electronic device 1 through the rigid substrate 10, so that the electronic device 1 is peeled from the rigid substrate 10. It can be understood that the electronic device 1 is separated from the rigid substrate 10, and the back surface of the rigid substrate 10 can be irradiated by laser scanning. Since the rigid substrate 10 has light permeability, laser light is irradiated on the sacrificial layer 20. Further, in order to improve the absorption rate of the sacrificial layer 20 to the laser and separate the sacrificial layer 20 from the rigid substrate 10, a laser absorber may be doped into the sacrificial layer 20.
  • the laser can be scanned from one end of the rigid substrate 10 to the other end, so that the functional unit 3 is detached from the rigid substrate 10 and peeled off.
  • the laser may be a gas laser or a solid-state laser.
  • the solid-state laser is, for example, a semiconductor laser.
  • the gas laser is, for example, but not limited to, excimer laser, Nd-YAG laser, Ar laser, CO 2 laser, He-Ne laser, or the like.
  • the laser absorber is, for example, but not limited to one of salicylates, benzophenones, benzotriazoles, substituted acrylonitriles, triazines, or a combination thereof.
  • FIG. 3 shows a flowchart of a method for manufacturing an electronic device according to a second embodiment of the present invention
  • FIG. 4 shows a method for manufacturing an electronic device according to a second embodiment of the present invention.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • Step S301 providing a rigid substrate.
  • Step S302 forming a sacrificial layer on the rigid substrate.
  • the sacrificial layer 20 and the rigid substrate 10 are stacked, and the peripheral side of the sacrificial layer 20 is retracted relative to the peripheral side of the rigid substrate 10 to form a notch 201.
  • the outer side of the sacrificial layer 20 and the corresponding outer side of the rigid substrate 10 are located on different planes.
  • the length of the sacrificial layer 20 is smaller than the length of the rigid substrate 10. It can be understood that the method for forming the sacrificial layer 20 on the rigid substrate 10 includes processes such as coating, evaporation, or epitaxy.
  • Step S303 forming the functional units arranged on the sacrificial layer at intervals.
  • forming the functional units 3 arranged on the sacrificial layer 20 at intervals includes:
  • a plurality of spaced-apart substrates 31 and functional devices 32 are sequentially arranged on the sacrificial layer 20 to produce a number of spaced-apart functional units 3; or
  • a plurality of functional devices 32 arranged at intervals are arranged on the sacrificial layer 20 to produce a plurality of functional units 3 arranged at intervals.
  • the functional units 3 arranged at intervals on the sacrificial layer 20 specifically include:
  • the circumferential side of the sacrificial layer 20 is retracted relative to the circumferential side of the rigid substrate 10 to form a notch 201, so that the subsequent base layer 30 seals the sacrificial layer 20, thereby avoiding the preparation function
  • the solution used in the process of the device 32 dissolves the sacrificial layer 20 and causes the separation yield of the electronic device 1 and the rigid substrate 10 to decrease.
  • the sacrificial layer 20 is covered by the base layer 30, the solution used during the preparation of the functional device 32 can be prevented from dissolving the sacrificial layer 20, that is, the sacrificial layer 20 used in this case can be ignored The situation of being dissolved by the solution of the functional device is wider. Further, since the sacrificial layer 20 is formed before the functional device 32 is formed, the withstand temperature of the sacrificial layer 20 still needs to be higher than the highest temperature of the electronic device 1 in the manufacturing process, to avoid the high temperature causing damage to the structure of the sacrificial layer 20 When the electronic device layer 1 is completely separated from the rigid substrate 10, the yield decreases.
  • each functional unit 3 includes a base 31 and a functional device 32 disposed on the side of the base 31 away from the rigid substrate 10.
  • the substrate 31 and the functional device 32 are stacked.
  • a space 301 is formed between any two adjacent functional units 3 and the sacrificial layer 20.
  • each functional unit 3 includes only the functional device 32, that is, the substrate 31 may be omitted.
  • an orthographic projection of the functional unit 3 in a direction perpendicular to the rigid substrate 10 falls within the sacrificial layer 20, so that the elastic layer 5 covers each functional unit 3, so that it is removed In the process of the sacrificial layer 20, each functional unit 3 can be protected from the external environment.
  • Step S304 forming the elastic layer on the rigid substrate, and covering the peripheral side of the sacrificial layer and the functional units arranged at intervals.
  • the forming method of the elastic layer 5 includes processes such as deposition, coating, bonding, or casting.
  • the orthographic projection of the functional unit 3 in the direction perpendicular to the rigid substrate 10 falls within the sacrificial layer 20.
  • step S305 the elastic layer is patterned so that the peripheral side of the sacrificial layer is exposed, and the elastic layer covers several functional units to manufacture the electronic device to be peeled off.
  • the existing patterning process may be used to pattern the elastic layer 5.
  • the elastic layer 5 is lithographically and etched using a mask plate stacked with the sacrificial layer 20. Before photolithography and etching, a layer of photoresist is coated on the elastic layer 5. In this way, the acting light is projected on the reticle, and the photoresist is exposed, developed, etc., so that the elastic layers 5 exposed on the opposite sides of the photoresist are etched, so that the peripheral side of the sacrificial layer 5 Exposed.
  • the elastic layer 5 may be patterned by mechanical cutting to expose the peripheral side of the sacrificial layer 5. The circumferential side of the patterned elastic layer 5 is on the same plane as the circumferential side of the sacrificial layer 20.
  • Step S306 the sacrificial layer is removed to separate the electronic device from the rigid substrate.
  • FIG. 5 shows a flowchart of a method for manufacturing an electronic device according to a third embodiment of the present invention.
  • FIG. 6 shows a method for manufacturing an electronic device according to a third embodiment of the present invention. Schematic diagram of the manufacturing process of the device.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • Step S501 providing a rigid substrate.
  • Step S502 a plurality of functional units arranged at intervals are arranged on the rigid substrate.
  • step S503 a sacrificial layer is formed on the rigid substrate, and the sacrificial layer and a plurality of the functional units are alternately arranged side by side, and the peripheral part of each functional unit is exposed.
  • the temperature resistance of the sacrificial layer 20 is not limited.
  • a sacrificial layer 20 is formed on the rigid substrate 10 so that the sacrificial layer 20 and a plurality of the functional units 3 are alternately arranged side by side, and each of the functional units 3 is partially exposed , Including:
  • the sacrificial layer 20 is patterned, and the sacrificial layer 20 in contact with the rigid substrate 10 remains, and the peripheral side portion of each of the functional units 3 is exposed.
  • the thickness of the sacrificial layer 20 is smaller than the thickness of the substrate 31, that is, the peripheral side of the patterned sacrificial layer 20 does not completely cover the peripheral side of the substrate 31, so as to increase the contact area between the elastic layer 5 and the functional unit 3
  • the yield of the electronic device 1a separated from the rigid substrate 10 is improved.
  • the circumferential side of the patterned sacrificial layer 20 may also completely cover the circumferential side of the substrate 31, as long as the adhesion of the elastic layer 5 to the functional unit 3 is greater than the The adhesion force of the base 31 to the rigid substrate 10 is sufficient, so that the electronic device 1 a can be peeled off from the rigid substrate 10.
  • a sacrificial layer 20 is formed on the rigid substrate 10 so that the sacrificial layer 20 and a plurality of the functional units 3 are alternately arranged side by side, and the base 31 of each functional unit 3 Part of the peripheral side is exposed, including:
  • the sacrificial layer 20 is filled in the space 301, and the sacrificial layer 20 and the functional units 3 are alternately arranged side by side, and the peripheral portion of each substrate 31 is exposed.
  • the method for forming the sacrificial layer 20 on the rigid substrate 10 includes processes such as coating, evaporation, or epitaxy.
  • Step S504 forming an elastic layer on the sacrificial layer, and covering the elastic layer with a plurality of exposed portions of the functional unit that are not in contact with the sacrificial layer, to manufacture the electronic device to be peeled off.
  • the elastic layer 5 of the electronic device 1a and the several bases 31 are located on different planes on the side close to the rigid substrate.
  • the adhesion of the elastic layer 5 to the base 31 and/or the functional device 32 is greater than the adhesion of the base 31 to the rigid substrate 10 to ensure that the electronic device 1a is removed from the rigid substrate 10 on the separation.
  • the forming method of the elastic layer 5 includes processes such as deposition, coating, bonding, or casting. For details, reference may be made to the manufacturing method of the elastic layer 5 in the first embodiment, and details are not described herein again.
  • Step S505 the sacrificial layer is removed to separate the electronic device from the rigid substrate.
  • the embodiment of the invention provides an electronic device and a manufacturing method thereof.
  • an electronic device to be peeled is provided on the rigid substrate, and the electronic device includes a plurality of functional units arranged at intervals and an elastic layer covering the functional units;
  • the rigid substrate to manufacture the electronic device. Through the removal of the rigid substrate, mass production of electronic devices can be realized on the basis of the existing mature display panel process, and the production efficiency is improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供了一种电子器件及其制作方法。所述电子器件的制作方法包括如下步骤：提供刚性基板(S101)；在所述刚性基板上设置待剥离的电子器件(S103)；移除所述刚性基板，以制得所述电子器件(S105)。本发明可在现有成熟显示面板工艺的基础上实现电子器件的量产，提高了生产效率。

Description

电子器件及其制作方法 技术领域
本发明涉及电子技术领域，尤其涉及一种电子器件及其制作方法。
背景技术
随着电子技术的发展，消费者对于电子装置的需求越来越多样化、个性化。电子装置的形态也随之发生变化，即由原来的直板化逐渐演变成折叠式、滑盖式等，并有进一步演变成柔性化甚至弹性化的趋势。现有的电子装置的制作方法，是在弹性的基底上形成图案化的导线，然后再通过转移印章的方式将芯片固定于基底上而与导线连接。然而，这种制作方法与现有的半导体、显示面板等制造技术不兼容，造成生产效率低下。
发明内容
鉴于现有技术中存在的上述问题，本发明提供一种生产效率较高的电子器件及其制作方法。
为了实现上述目的，本发明实施方式提供如下技术方案：
第一方面，本发明提供了一种电子器件的制作方法，其包括如下步骤：
提供刚性基板；
在所述刚性基板上设置待剥离的电子器件；以及
移除所述刚性基板，以制得所述电子器件。
第二方面，本发明提供了一种电子器件，通过上述的电子器件的制作方法制成，所述电子器件包括若干间隔排列的功能单元和包覆若干所述功能单元的弹性层。
本发明实施例提供了一种电子器件及其的制作方法。本发明的电子器件的制作方法，通过提供刚性基板；在所述刚性基板上设置待剥离的电子器件；以及移除所述刚性基板，以制得所述电子器件，从而基于刚性基板的移除，可在 现有成熟显示面板工艺的基础上实现电子器件的量产，提高了生产效率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明第一实施例提供的电子器件的制作方法的流程图。
图2是本发明第一实施例提供的电子器件的制作制造流程示意图。
图3是本发明第二实施例提供的电子器件的制作方法的流程图。
图4是本发明第二实施例提供的电子器件的制作制造流程示意图。
图5是本发明第三实施例提供的电子器件的制作方法的流程图。
图6是本发明第三实施例提供的电子器件的制作制造流程示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请一并参阅图1和图2，图1所示为本发明实施例提供了一种电子器件的制作方法的流程图，图2所示为本发明实施例提供了一种电子器件的制作工艺的流程示意图。电子器件1的制作方法包括如下步骤。
步骤S101，提供刚性基板。
所述刚性基板10可以为，但不局限于玻璃基板、金属基板、或陶瓷基板。优选的，刚性基板10为薄型玻璃基板，以方便电子器件1在制作完成后与刚性基板10快速分离。具体的，所述玻璃基板例如是，但不局限于钠钙玻璃、 无碱玻璃、磷酸系玻璃或石英。所述刚性基板10用于在所述电子器件1的制作过程中，支撑所述电子器件1。
步骤S103，在所述刚性基板上设置待剥离的电子器件。
所述在所述刚性基板10上设置待剥离的电子器件1，具体包括：
在所述刚性基板10上设置若干间隔排列的功能单元3；
在所述功能单元3的背离所述刚性基板10的一侧覆盖弹性层5，以制得所述待剥离的电子器件1。
可以理解的，所述在所述刚性基板10上设置若干间隔排列的功能单元3，具体包括：
在所述刚性基板10上依次设置基底层30及若干间隔排列的功能器件32；
图案化所述基底层30，以制得若干间隔排列的功能单元3；或
在所述刚性基板10上依次设置若干间隔排列的基底31及功能器件32，以制得若干间隔排列的功能单元3；或
在所述刚性基板10上设置若干间隔排列的功能器件32，以制得若干间隔排列的功能单元3。
在本实施例中，图案化所述基底层30可采用现有的构图工艺。具体的，在本实施例中，所述基底层30以若干所述功能器件32作为掩膜版或以单独的与功能器件32层叠设置的掩膜版进行光刻和刻蚀。在光刻和刻蚀之前，在若干所述功能器件32上涂覆一层光刻胶。如此，将作用光投射于掩膜版，并对光刻胶进行曝光、显影等处理，使得暴露于光刻胶相对两侧的所述基底层30被刻蚀，以获得若干间隔排列的所述基底31，也即在所述刚性基板10上设置间隔排列的若干所述功能单元3。
在本实施例中，在所述刚性基板上设置待剥离的电子器件之前，所述制作方法还包括：
在所述刚性基板10上形成所述牺牲层20。
具体的，在本实施例中，所述牺牲层20与所述刚性基板10层叠设置，所 述在所述刚性基板10上设置待剥离的电子器件1，具体包括：
在所述牺牲层20上形成若干间隔排列的所述功能单元3；
在所述牺牲层20上形成所述弹性层5，并使所述弹性层5包覆若干间隔排列的所述功能单元3，以制得所述待剥离的电子器件1。
在本实施例中，电子器件1包括间隔排列的若干功能单元3和包覆若干功能单元3的弹性层5。所述弹性层5的周侧与所述牺牲层20的周侧相接且平齐，也即所述弹性层5的周侧与所述牺牲层20的周侧位于同一平面。
所述弹性层5中包含有弹性体。所述弹性体优选在外力作用下其内部的高分子链或晶格结构可被拉伸的材料。所述弹性体例如是，但不局限于天然橡胶、合成橡胶、热塑性弹性体中的一者或它们之间的组合。所述天然橡胶例如是聚异戊二烯。所述合成橡胶包括，但不局限于丁苯橡胶、顺丁橡胶、氯丁橡胶、丁腈橡胶、丁基橡胶或硅胶。所述硅胶例如是聚二甲基硅氧烷(polydimethylsiloxane，PDMS)。所述热塑性弹性体包括，但不局限于苯乙烯嵌段共聚物、热塑性烯烃、热塑性硫化橡胶、热塑性聚氨酯、热塑性共聚酯或热塑性聚酰胺。
所述在所述牺牲层20上形成若干间隔排列的所述功能单元3，具体包括：
在所述牺牲层20上依次设置基底层30及若干间隔排列的功能器件32；
图案化所述基底层30，以制得若干间隔排列的功能单元3；或
在所述牺牲层20上依次设置若干间隔排列的基底31及功能器件32，以制得若干间隔排列的功能单元3；或
在所述牺牲层20上设置若干间隔排列的功能器件32，以制得若干间隔排列的功能单元3。
在本实施例中，所述基底层30可选择地，但是不局限于通过沉积、涂布等方式设置于所述牺牲层20上。在本实施例中，所述牺牲层20通过涂布、蒸镀、外延等方式形成于所述刚性基板10上。所述基底层30与所述牺牲层20层叠设置。所述牺牲层20与所述刚性基板10层叠设置，且所述牺牲层20的 周侧与所述刚性基板10的周侧位于同一平面。
可以理解的，在一实施例中，每一功能单元3包括基底31和设置在所述基底31上的功能器件32，且相邻两基底31与所述牺牲层20之间形成有空间301。所述基底31和功能器件32层叠设置。基底31可以由透明材料制成。在本实施例中，基底31可以为柔性基底，也可以为刚性基底。所述基底31中包含，但不局限于聚酰亚胺(Polyimide，PI)、无色透明聚酰亚胺(Colorless Polyimide，CPI)、聚对苯二甲酸乙二醇酯(polyethylene terephthalate，PET)、聚酰胺(polyamide，PA)、聚碳酸酯(polycarbonate，PC)、聚苯醚砜(polyethersulfone，PES)、聚萘二甲酸乙二醇酯(polyethylene naphthalate，PEN)、聚甲基丙烯酸甲酯(polymethylmethacrylate，PMMA)、环烯烃共聚物(cycloolefin copolymer，COC)、环烯烃聚合物(Cyclo-olefin polymer，COP)、玻璃、硅中的一种或它们之间的组合。可选的，所述基底31为柔性基底，且所述基底31的弹性小于所述弹性层5的弹性。与所述刚性基板10分离之后的电子器件1具有弹性，所述电子器件1被拉伸时相邻两所述功能单元3之间的距离增大。所述功能单元3在垂直于所述刚性基板10的方向的正投影落在所述牺牲层20内，以使弹性层5包覆所述每一功能单元3，从而在移除所述牺牲层20的过程中，每一功能单元3可以免受外界环境的影响。在其他实施例中，每一功能单元3仅包括功能器件32，也即基底31可以省略。
所述功能器件32包括，但不局限于微芯片、通信总线。所述微芯片为具有特定功能的电子器件。所述微芯片例如是，但不局限于具有处理功能、存储功能、计算功能、显示功能、感测功能或通信功能等的电子器件。所述微芯片包括但不局限于：直接制作在基底31上的电路、转移到基底31上的已封装微芯片、转移到基底31上的未封装微芯片。所述通信总线用于实现这些电子器件之间的通信连接。在本实施例中，所述电子器件1例如为显示面板。所述显示面板例如是，但不局限于液晶显示(Liquid Crystal Display,LCD)面板、量子点显示(Quantum Dot Light Emitting Diodes，QLED)面板、电子纸(E-paper  Display，EPD)、触摸屏(Touch panel)、柔性太阳能电池(Page View，PV)板、射频标签(Radio Frequency Identification,RFID)等具有特定功能的产品或部件。
可以理解的，在第一实施方式中，所述在牺牲层20上形成弹性层5，并使所述弹性层5包覆若干间隔排列的所述功能单元3，以制得所述待剥离的电子器件1，具体包括：
配置包含有弹性体的液态胶；
将所述液态胶涂布在所述牺牲层20和若干所述功能单元3上，并固化，以使所述弹性层5填充于所述空间301内，且所述弹性层5包覆若干所述基底31和若干所述功能器件32，以制得所述待剥离的电子器件1。
在第二实施方式中，所述在牺牲层20上形成弹性层5，并使所述弹性层5包覆若干间隔排列的所述功能单元3，以制得所述待剥离的电子器件1，具体包括：
预先制备包含有弹性体的固态的所述弹性层5；
将所述弹性层5与所述牺牲层20及所述功能单元3进行层叠、加压/加热来进行贴合，以使所述弹性层5贴附于所述牺牲层20上，并且包覆所述基底31和所述功能器件32，以制得所述待剥离的电子器件1。
在第三实施方式中，所述在牺牲层20上形成弹性层5，并使所述弹性层5包覆若干间隔排列的所述功能单元3，以制得所述待剥离的电子器件1，具体包括：
在所述牺牲层20和多个所述功能单元3上沉积包含有弹性体的弹性层5，以使所述弹性层5形成于所述牺牲层20上，并且包覆所述基底31和所述功能器件32，以制得所述待剥离的电子器件1。
可以理解的，沉积工艺包括，但不局限于化学汽相沉积、脉冲激光沉积以及原子层沉积。在其他实施例中，弹性层5还可以通过贴合及浇筑工艺形成在牺牲层20上，并使所述弹性层5包覆若干所述功能单元3。
可选的，在本实施例中，由于基底31的弹性系数比弹性层5的弹性系数低，从而电子器件1处于形变状态时，比如拉伸或弯折，基底31能够用于支撑及保护功能器件32。由于弹性层5填充于基底31之间的空间301内，且包覆基底31和功能器件32，因此所述弹性层5能够为所述电子器件1在弯折或拉伸时提供弹力，从而电子器件1的变形更灵活，并确保功能器件32从所述刚性基板10上分离而避免所述电子器件1的损害，进而保护了所述电子器件1。可以理解的，空间301的宽度可以根据功能器件32的图案化制程所需尺寸及功能器件32的电路板密度来设计。
步骤S105，移除所述刚性基板，以制得所述电子器件。
在一实施例中，所述移除所述刚性基板10，以制得所述电子器件，具体包括：采用溶解剂溶解所述刚性基板10，以制得所述电子器件1。
具体的，在本实施例中，所述刚性基板10可以包含，但不局限于金属、硬塑料等刚性材料。所述溶解剂可以是，但不局限于酸性溶剂、碱性溶剂或两性溶剂。所述金属可以优选易溶于酸或碱的金属材料，如铝、钾等。所述硬塑料优选耐高温的聚四氟乙烯、改性聚苯乙烯、增强型线型聚脂、聚酰亚胺、改性聚苯醚等。
在另一实施例中，所述移除所述刚性基板10，以制得所述电子器件1，包括：
进行离型处理，以使所述电子器件1从所述刚性基板10上分离。
在本实施例中，进行离型处理，以使所述电子器件1从所述刚性基板10上分离，具体包括：
采用激光烧蚀所述弹性层5和/或所述基底31，以使若干所述功能单元3与所述弹性层5一同从所述刚性基板10上分离。
具体的，所述电子器件1从所述刚性基板10分离，可用激光扫描照射刚性基板10的背面。由于刚性基板10具有透光性，因此激光照射在位于刚性基板10和电子器件1之间的基底31及所述弹性层5上。进一步的，弹性层5中可以掺入有激光吸收剂，从而弹性层5能够吸收特定波长的激光，因此大大 提高了弹性层5对激光的吸收率而使弹性层5与刚性基板10分离。可选的，激光可从刚性基板10一端向另一端扫描，使得刚性基板10脱离基底31及所述弹性层5而被剥离。在本实施例中，所述激光可以为气体激光或固体激光。所述固体激光例如是半导体激光。所述气体激光例如是，但不局限于准分子激光、Nd-YAG激光、Ar激光、CO2激光或He-Ne激光等。
在本实施例中，采用激光同时烧蚀所述弹性层5或所述基底31。基底31的激光吸收率与弹性层5的激光吸收率大致相同。如此，当激光扫描照射所述弹性层5时，基底31与弹性层5同时被激光烧蚀一薄层，且烧蚀后的基底31与弹性层5在靠近烧蚀面的一侧位于同一平面，从而烧蚀后的基底31与弹性层5共同构成电子器件1。可选的，在本实施例中，基底31的厚度及弹性层5的厚度均大于激光烧蚀的深度。在一些实施例中，基底31的激光吸收率与弹性层5的激光吸收率可以不相同，从而烧蚀后的基底31与弹性层5在靠近烧蚀面的一侧位于不同平面。
在其他实施例中，采用激光烧蚀所述弹性层5或所述基底31。当弹性层5与刚性基板10之间的粘附力小于功能单元3与刚性基板10之间的粘附力时，采用激光烧蚀所述基底31。弹性层5采用吸附力低的弹性体，例如PDMS。具体的，激光仅扫描照射基底31与刚性基板10相接触的区域，并通过施加机械外力于弹性层5上，可以使烧蚀后的基底31与弹性层5一同从刚性基板10上剥离，从而烧蚀后的基底31、功能器件32与弹性层30共同构成电子器件1。由于激光仅对基底31进行烧蚀处理，因此，烧蚀后的基底31与弹性层5在靠近烧蚀面的一侧位于不同平面。当弹性层5与刚性基板10之间的粘附力大于功能单元3与刚性基板10之间的粘附力时，采用激光烧蚀弹性层5。
在其他实施例中，所述移除所述刚性基板10，以制得所述电子器件1，包括：
移除所述牺牲层20，以使所述电子器件1与所述刚性基板10分离。
其中，所述电子器件1的弹性层5与若干所述基底31在靠近刚性基板的一侧位于同一平面。移除所述牺牲层可以通过但不局限于溶解或刻蚀的方式实 现。
在一具体实施例中，所述移除所述牺牲层20，以使所述电子器件1与所述刚性基板10分离，具体包括：
采用溶解剂溶解所述牺牲层20，以使所述电子器件1从所述刚性基板10上分离。
可以理解的，由于所述牺牲层20的周侧是裸露的，且所述牺牲层20在形成所述功能单元3之前形成在所述刚性基板10上，因此所述牺牲层20不能与所述电子器件1在制备过程中的溶液反应，且牺牲层20的耐受温度高于电子器件1在制程中的最高温度，以避免所述牺牲层20遭受破坏而影响后续的电子器件1与所述刚性基板10的分离。
在本实施例中，牺牲层20中包含，但不局限于无机盐类化合物、无机氧化物、有机高分子化合物、金属中的一者或它们之间的组合。在本实施例中，所述溶解剂为液体。在其他实施例中，所述溶解剂还可以是气体。所述溶解剂包括，但不局限于水、酸、碱、有机溶液、显影液中的至少一者或它们之间的组合。优选的，所述无机盐类化合物选自易容于水的材料，例如钾盐、钠盐、铵盐、硝酸盐、醋酸盐等；所述无机氧化物选自易溶于酸或碱的材料，例如碱性氧化物、酸性氧化物或两性氧化物；所述有机高分子化合物选自易溶于水、有机溶剂或显影剂的材料，例如是环氧树脂；所述金属选自易溶于酸或碱的金属材料，如铝、钾等。
在另一具体实施例中，所述移除所述牺牲层20，以使所述电子器件1与所述刚性基板10分离，具体包括：
采用激光烧蚀所述牺牲层20，以将所述电子器件1从所述刚性基板10剥离。
可选的，所述刚性基板10由透明材料制成，以便激光能够透过所述刚性基板10而照射电子器件1，从而实现所述电子器件1从所述刚性基板10上剥离。可以理解的，所述电子器件1从所述刚性基板10分离，可用激光扫描照 射刚性基板10的背面。由于刚性基板10具有透光性，因此激光照射在牺牲层20上。进一步的，为了提高了牺牲层20对激光的吸收率而使牺牲层20与刚性基板10分离，可在牺牲层20中掺入激光吸收剂。可选的，激光可从刚性基板10一端向另一端扫描，使得功能单元3脱离刚性基板10而被剥离。在本实施例中，所述激光可以为气体激光或固体激光。所述固体激光例如是半导体激光。所述气体激光例如是，但不局限于准分子激光、Nd-YAG激光、Ar激光、CO2激光或He-Ne激光等。所述激光吸收剂例如是，但不局限于水杨酸酯类、二苯甲酮类、苯并三唑类、取代丙烯腈类、三嗪类中的一者或它们之间的组合。
请一并参阅图3和图4，图3所示为本发明第二实施例提供了一种电子器件的制作方法的流程图，图4所示为本发明第二实施例提供了一种电子器件的制作工艺的流程示意图。电子器件1的制作方法包括如下步骤。
步骤S301，提供刚性基板。
具体地，可以对应参考第一实施例中的方法步骤S101，在此不再赘述。
步骤S302，在所述刚性基板上形成牺牲层。
在本实施例中，所述牺牲层20与所述刚性基板10层叠设置，且所述牺牲层20的周侧相对所述刚性基板10的周侧内缩而形成缺口201。具体的，所述牺牲层20的外侧与对应的所述刚性基板10的外侧位于不同平面。所述牺牲层20的长度小于刚性基板10的长度。可以理解的，在刚性基板10上形成牺牲层20的方法包括涂布、蒸镀或外延等工艺。
步骤S303，在所述牺牲层上形成若干间隔排列的所述功能单元。具体地，所述在所述牺牲层20上形成若干间隔排列的所述功能单元3，具体包括：
将基底层30填充于所述缺口201处，并使所述基底层30包覆所述牺牲层20；
在所述基底层30上形成间隔排列的若干所述功能器件32；
图案化所述基底层30，以制得若干间隔排列的功能单元3；或
在所述牺牲层20上依次设置若干间隔排列的基底31和功能器件32，以 制得若干间隔排列的功能单元3；或
在所述牺牲层20上设置若干间隔排列的功能器件32，以制得若干间隔排列的功能单元3。
在本实施例中，在所述牺牲层20上形成若干间隔排列的所述功能单元3，具体包括：
在所述刚性基板10上形成覆盖所述牺牲层20并填充所述缺口的基底层30；
在所述基底层30上形成若干间隔排列的功能器件32；
图案化所述基底层30，保留被所述功能器件32覆盖的部分所述基底层30，并移除其他位置的基底层30。
在本实施例中，由于所述牺牲层20的周侧相对所述刚性基板10的周侧内缩而形成缺口201，以便后续的基底层30对所述牺牲层20进行密封，进而避免制备功能器件32的过程中所使用的溶液将牺牲层20溶解而造成电子器件1与所述刚性基板10的分离良率降低。
可以理解的，由于牺牲层20被基底层30封盖，因此可避免制备功能器件32的过程中所使用的溶液将牺牲层20溶解，即在这种情况下所使用的牺牲层20可以不用考虑被功能器件的溶液溶解的情况，选材更为宽泛。进一步的，由于牺牲层20在形成功能器件32之前形成的，因此牺牲层20的耐受温度仍需高于电子器件1在制程中的最高温度，以避免高温导致牺牲层20的结构破坏而造成电子器件层1与刚性基板10完全分离良率降低。
在一实施例中，每一功能单元3包括基底31及设置于所述基底31远离所述刚性基板10一侧的功能器件32。基底31和功能器件32层叠设置。任意相邻的两所述功能单元3与所述牺牲层20之间形成有空间301。在其他实施例中，在其他实施例中，每一功能单元3仅包括功能器件32，也即基底31可以省略。可选的，所述功能单元3在垂直于所述刚性基板10的方向的正投影落在所述牺牲层20内，以使弹性层5包覆所述每一功能单元3，从而在移除所 述牺牲层20的过程中，每一功能单元3可以免受外界环境的影响。具体地，图案化所述基底层30的步骤可以参考第一实施例中的基底31的制作方法，在此不再赘述。
步骤S304，在所述刚性基板上形成所述弹性层，并使所述弹性层包覆所述牺牲层的周侧及若干间隔排列的所述功能单元。在本实施例中，弹性层5的形成方法包括沉积、涂布、贴合或浇筑等工艺，具体可以参考第一实施例中的弹性层5的制作方法，在此不再赘述。所述功能单元3在垂直于所述刚性基板10的方向的正投影落在所述牺牲层20内。
步骤S305，图案化所述弹性层，以使所述牺牲层的周侧暴露，且所述弹性层包覆若干所述功能单元，以制得所述待剥离的电子器件。
在本实施例中，图案化所述弹性层5可采用现有的构图工艺。具体的，在本实施例中，所述弹性层5以与牺牲层20层叠设置的掩膜版进行光刻和刻蚀。在光刻和刻蚀之前，在弹性层5上涂覆一层光刻胶。如此，将作用光投射于掩膜版，并对光刻胶进行曝光、显影等处理，使得暴露于光刻胶相对两侧的弹性层5被刻蚀，以使所述牺牲层5的周侧暴露。在其他实施例中，图案化所述弹性层5还可以采用机械切割的方式以使所述牺牲层5的周侧裸露。图案化的所述弹性层5的周侧与所述牺牲层20的周侧位于同一平面。
步骤S306，移除所述牺牲层，以使所述电子器件从所述刚性基板上分离。
具体地，可以对应参考第一实施例中的方法步骤105，在此不再赘述。
请一并参阅图5和图6，图5所示为本发明第三实施例提供了一种电子器件的制作方法的流程图，图6所示为本发明第三实施例提供了一种电子器件的制作工艺的流程示意图。电子器件1的制作方法包括如下步骤。
步骤S501，提供刚性基板。
具体地，可以对应参考第一实施例中的方法步骤S101，在此不再赘述。
步骤S502，在所述刚性基板上设置若干间隔排列的所述功能单元。
具体地，可以对应参考第一实施例中的方法步骤S103，在此不再赘述。
步骤S503，在所述刚性基板上形成牺牲层，并使所述牺牲层与若干所述功能单元并排交替设置，且使每一所述功能单元的周侧部分裸露。
可以理解的，由于所述牺牲层20在所述功能单元3制作完成后形成于所述刚性基板10上，因此，所述牺牲层20的耐温性不受限制。
在一具体实施例中，在所述刚性基板10上形成牺牲层20，以使所述牺牲层20与若干所述功能单元3并排交替设置，且使每一所述功能单元3的并部分裸露，具体包括：
在所述刚性基板10上形成牺牲层20，并使所述牺牲层20包覆若干所述功能单元3；
图案化所述牺牲层20，并保留与所述刚性基板10接触的牺牲层20，且使每一所述功能单元3的周侧部分裸露。
在本实施例中，牺牲层20的厚度小于基底31的厚度，也即图案化的牺牲层20的周侧未完全覆盖基底31的周侧，以增大弹性层5与功能单元3的接触面积，从而提高电子器件1a从所述刚性基板10分离的良率。可以理解的，在其他实施例中，图案化的牺牲层20的周侧也可以完全覆盖基底31的周侧，只需保证所述弹性层5相对所述功能单元3的粘附力大于所述基底31相对所述刚性基板10的粘附力即可，从而可以实现将所述电子器件1a从所述刚性基板10上剥离。
在另一具体实施例中，在所述刚性基板10上形成牺牲层20，以使所述牺牲层20与若干所述功能单元3并排交替设置，且使每一所述功能单元3的基底31的周侧部分裸露，具体包括：
将所述牺牲层20填充于所述空间301内，并使所述牺牲层20与若干所述功能单元3并排交替设置，且使每一所述基底31的周侧部分裸露。
可以理解的，在刚性基板10上形成牺牲层20的方法包括涂布、蒸镀或外延等工艺。
步骤S504，在所述牺牲层上形成弹性层，并使所述弹性层包覆若干所述 功能单元未与所述牺牲层接触的裸露部分，以制得所述待剥离的电子器件。
在本实施例中，电子器件1a的弹性层5与若干所述基底31在靠近刚性基板的一侧位于不同平面。可选的，所述弹性层5相对所述基底31和/或所述功能器件32的粘附力大于所述基底31相对所述刚性基板10的粘附力，以确保电子器件1a从刚性基板10上分离。在本实施例中，弹性层5的形成方法包括沉积、涂布、贴合或浇筑等工艺，具体可以参考第一实施例中的弹性层5的制作方法，在此不再赘述。
步骤S505，移除所述牺牲层，以使所述电子器件从所述刚性基板上分离。
具体地，可以对应参考第一实施例中的方法步骤105，在此不再赘述。
本发明实施例提供了一种电子器件及其的制作方法。本发明的电子器件的制作方法，通过在所述刚性基板上设置待剥离的电子器件，所述电子器件包括间隔排列的若干功能单元和包覆若干所述功能单元的弹性层；再进行移除所述刚性基板，以制得所述电子器件。通过对刚性基板的移除，可在现有成熟显示面板工艺的基础上实现电子器件的量产，提高了生产效率。
以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上上述，本说明书内容不应理解为对本发明的限制。

Claims (20)

  1. 一种电子器件的制作方法，其特征在于，包括如下步骤:
    提供刚性基板；
    在所述刚性基板上设置待剥离的电子器件；以及
    移除所述刚性基板，以制得所述电子器件。
  2. 如权利要求1所述的电子器件的制作方法，其特征在于，在所述刚性基板上设置待剥离的电子器件，具体包括：
    在所述刚性基板上设置若干间隔排列的功能单元；
    在所述功能单元的背离所述刚性基板的一侧覆盖弹性层，以制得所述待剥离的电子器件。
  3. 如权利要求2所述的电子器件的制作方法，其特征在于，在所述刚性基板上设置若干间隔排列的功能单元，具体包括：
    在所述刚性基板上依次设置基底层及若干间隔排列的功能器件；
    图案化所述基底层，以制得若干间隔排列的功能单元；或
    在所述刚性基板上依次设置若干间隔排列的基底及功能器件，以制得若干间隔排列的功能单元；或
    在所述刚性基板上设置若干间隔排列的功能器件，以制得若干间隔排列的功能单元。
  4. 如权利要求1所述的电子器件的制作方法，其特征在于，所述移除所述刚性基板，以制得所述电子器件，包括：
    进行离型处理，以使所述电子器件从所述刚性基板上分离。
  5. 如权利要求1所述的电子器件的制作方法，其特征在于，所述在所述刚性基板上设置待剥离的电子器件之前，所述制作方法还包括：在所述刚性基板上形成所述牺牲层；所述移除所述刚性基板，以制得所述电子器件，包括：
    移除所述牺牲层，以使所述电子器件与所述刚性基板分离。
  6. 如权利要求5所述的电子器件的制作方法，其特征在于，所述牺牲层 与所述刚性基板层叠设置，所述在所述刚性基板上设置待剥离的电子器件，具体包括：
    在所述牺牲层上形成若干间隔排列的所述功能单元；
    在所述牺牲层上形成所述弹性层，并使所述弹性层包覆若干间隔排列的所述功能单元，以制得所述待剥离的电子器件。
  7. 如权利要求5所述的电子器件的制作方法，其特征在于，所述牺牲层的周侧相对所述刚性基板的周侧内缩而形成缺口，在所述刚性基板上设置待剥离的电子器件，具体包括：
    在所述牺牲层上形成若干间隔排列的所述功能单元；
    在所述刚性基板上形成所述弹性层，并使所述弹性层包覆所述牺牲层的周侧及若干间隔排列的所述功能单元；
    图案化所述弹性层，以使所述牺牲层的周侧暴露，且所述弹性层包覆若干所述功能单元，以制得所述待剥离的电子器件。
  8. 如权利要求7所述的电子器件的制作方法，其特征在于，在所述牺牲层上形成若干间隔排列的所述功能单元，具体包括：
    在所述刚性基板上形成覆盖所述牺牲层并填充所述缺口的基底层；
    在所述基底层上形成若干间隔排列的功能器件；
    图案化所述基底层，保留被所述功能器件覆盖的部分所述基底层，并移除其他位置的基底层。
  9. 如权利要求6或7所述的电子器件的制作方法，其特征在于，图案化的所述弹性层的外周与所述牺牲层的外周位于同一平面，且所述功能单元在垂直于所述刚性基板的方向的正投影落在所述牺牲层内。
  10. 如权利要求2所述的电子器件的制作方法，其特征在于，在所述刚性基板上设置若干间隔排列的功能单元之后，还包括：
    在所述刚性基板上形成牺牲层，以使所述牺牲层与若干所述功能单元并排交替设置，且使每一所述功能单元的周侧部分裸露。
  11. 如权利要求10所述的电子器件的制作方法，其特征在于，所述在所述刚性基板上形成牺牲层，以使所述牺牲层与若干所述功能单元并排交替设置，且使每一所述功能单元的周侧部分裸露，具体包括：
    在所述刚性基板上形成所述牺牲层，并使所述牺牲层包覆若干所述功能单元；
    图案化所述牺牲层，并保留与所述刚性基板接触的牺牲层，且使每一所述功能单元的周侧部分裸露。
  12. 如权利要求10所述的电子器件的制作方法，其特征在于，任意相邻的两所述功能单元与所述刚性基板之间形成有空间，在所述刚性基板上形成牺牲层，以使所述牺牲层与若干所述功能单元并排交替设置，且使每一所述功能单元的周侧部分裸露，具体包括：
    将所述牺牲层填充于所述空间内，并使所述牺牲层与若干所述功能单元并排交替设置，且使每一所述功能单元的周侧部分裸露。
  13. 如权利要求10所述的电子器件的制作方法，其特征在于，所述在所述功能单元的背离所述刚性基板的一侧覆盖弹性层，以制得所述待剥离的电子器件，具体包括：
    在所述牺牲层上形成所述弹性层，并使所述弹性层包覆若干所述功能单元未与所述牺牲层接触的裸露部分，以制得所述待剥离的电子器件。
  14. 如权利要求5所述的电子器件的制作方法，移除所述牺牲层，以使所述电子器件与所述刚性基板分离，具体包括：
    采用溶解或刻蚀的方式移除所述牺牲层，以使所述电子器件与所述刚性基板分离。
  15. 如权利要求14所述的电子器件的制作方法，其特征在于，所述牺牲层中包含无机盐类化合物、无机氧化物、有机高分子化合物、金属中的一者或它们之间的组合；所述溶解或刻蚀所述牺牲层的溶剂选自中的水、酸、碱、有机溶液、显影液中的一者或它们之间的组合。
  16. 如权利要求3所述的电子器件的制作方法，其特征在于，所述基底中包含有聚酰亚胺、无色透明聚酰亚胺、聚对苯二甲酸乙二醇酯、聚酰胺、聚碳酸酯、聚苯醚砜、聚萘二甲酸乙二醇酯、聚甲基丙烯酸甲酯、环烯烃共聚物、环烯烃聚合物中的一者或它们之间的组合。
  17. 如权利要求3所述的电子器件的制作方法，其特征在于，所述基底为柔性基底，所述基底的弹性小于所述弹性层的弹性。
  18. 如权利要求1所述的电子器件的制作方法，其特征在于，与所述刚性基板分离之后的电子器件具有弹性，所述电子器件被拉伸时相邻两所述功能单元之间的距离增大。
  19. 如权利要求2所述的电子器件的制作方法，其特征在于，所述弹性层中包含有弹性体，所述弹性体选自天然橡胶、合成橡胶、热塑性弹性体中的一者或它们之间的组合；所述天然橡胶包括聚异戊二烯，所述合成橡胶包括丁苯橡胶、顺丁橡胶、氯丁橡胶、丁腈橡胶、丁基橡胶或硅胶，所述热塑性弹性体包括苯乙烯嵌段共聚物、热塑性烯烃、热塑性硫化橡胶、热塑性聚氨酯、热塑性共聚酯或热塑性聚酰胺。
  20. 一种电子器件，其特征在于，通过如权利要求1-19任一所述的电子器件的制作方法制成，所述电子器件包括若干间隔排列的功能单元和包覆若干所述功能单元的弹性层。
PCT/CN2018/123100 2018-12-24 2018-12-24 电子器件及其制作方法 Ceased WO2020132804A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201880097592.XA CN113169033A (zh) 2018-12-24 2018-12-24 电子器件及其制作方法
PCT/CN2018/123100 WO2020132804A1 (zh) 2018-12-24 2018-12-24 电子器件及其制作方法
US17/353,143 US20210315094A1 (en) 2018-12-24 2021-06-21 Electronic device and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/123100 WO2020132804A1 (zh) 2018-12-24 2018-12-24 电子器件及其制作方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/353,143 Continuation US20210315094A1 (en) 2018-12-24 2021-06-21 Electronic device and manufacturing method therefor

Publications (1)

Publication Number Publication Date
WO2020132804A1 true WO2020132804A1 (zh) 2020-07-02

Family

ID=71129453

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/123100 Ceased WO2020132804A1 (zh) 2018-12-24 2018-12-24 电子器件及其制作方法

Country Status (3)

Country Link
US (1) US20210315094A1 (zh)
CN (1) CN113169033A (zh)
WO (1) WO2020132804A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104752164A (zh) * 2013-12-30 2015-07-01 三星显示有限公司 制造柔性基底的方法和使用该方法制造显示装置的方法
JP5919707B2 (ja) * 2011-09-30 2016-05-18 大日本印刷株式会社 固体素子を有するデバイスの製造方法及びその製造方法で用いる複合体
CN105849198A (zh) * 2013-10-25 2016-08-10 亚克朗聚合物系统公司 树脂组合物、基底、制造电子装置的方法和电子装置
CN108365128A (zh) * 2018-01-19 2018-08-03 昆山国显光电有限公司 制备柔性显示设备的方法和柔性显示设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465479B (zh) * 2014-12-19 2017-03-01 京东方科技集团股份有限公司 柔性显示基板母板及柔性显示基板的制备方法
CN108417485B (zh) * 2018-01-18 2020-12-15 云谷（固安）科技有限公司 柔性衬底处理方法及柔性显示屏

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5919707B2 (ja) * 2011-09-30 2016-05-18 大日本印刷株式会社 固体素子を有するデバイスの製造方法及びその製造方法で用いる複合体
CN105849198A (zh) * 2013-10-25 2016-08-10 亚克朗聚合物系统公司 树脂组合物、基底、制造电子装置的方法和电子装置
CN104752164A (zh) * 2013-12-30 2015-07-01 三星显示有限公司 制造柔性基底的方法和使用该方法制造显示装置的方法
CN108365128A (zh) * 2018-01-19 2018-08-03 昆山国显光电有限公司 制备柔性显示设备的方法和柔性显示设备

Also Published As

Publication number Publication date
US20210315094A1 (en) 2021-10-07
CN113169033A (zh) 2021-07-23

Similar Documents

Publication Publication Date Title
CN102103284B (zh) 显示装置和制造显示装置的方法
CN107394041B (zh) 柔性基底及其制作方法、柔性显示面板和柔性显示装置
CN105404407B (zh) 具有柔性触控感测器的触控面板及其制作方法
CN108400261B (zh) 一种柔性显示器件及其制作方法
TWI402012B (zh) 圖案化可撓式基板的方法
JP2006093209A5 (zh)
CN108227281B (zh) 可拉伸显示装置及可拉伸显示装置制备方法
US11217723B2 (en) Flexible display substrate and method for manufacturing the same, and flexible display device
CN109742091A (zh) 显示基板及其制备方法、显示装置
CN110969945A (zh) 支撑膜、柔性显示模组及其制备方法
CN107450777A (zh) 一种触控基板及其制备方法、触控面板、显示装置
CN103681357A (zh) 柔性显示器件及其制作方法、显示装置
KR20180060205A (ko) 가요성 표시장치를 지지하기 위한 가요성 표시장치 지지체 및 그의 제조방법
CN103811333A (zh) 线路的制造方法
JP6263603B2 (ja) 分離されたデバイス領域を形成するためのパターンをインプリントされた基板
TW201616467A (zh) 曲面裝飾板以及曲面顯示裝置的製作方法
CN103064248A (zh) 薄膜图案的制作方法及基板结构
JP2011129272A (ja) 両面透明導電膜シートとその製造方法
CN217551429U (zh) 显示装置
WO2020132804A1 (zh) 电子器件及其制作方法
CN109449186B (zh) Oled显示基板母板及其制作方法、和oled显示装置
TWI550459B (zh) 觸控顯示裝置及其製造方法
WO2020132801A1 (zh) 电子器件及其制作方法
CN111752415B (zh) 一种触控模组、其制备方法及显示装置
KR101279231B1 (ko) 전사필름, 이를 이용하여 제조된 액정표시장치 및 그의제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18945072

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18945072

Country of ref document: EP

Kind code of ref document: A1