WO2020124798A1 - 彩膜基板及显示面板 - Google Patents

彩膜基板及显示面板 Download PDF

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Publication number
WO2020124798A1
WO2020124798A1 PCT/CN2019/077140 CN2019077140W WO2020124798A1 WO 2020124798 A1 WO2020124798 A1 WO 2020124798A1 CN 2019077140 W CN2019077140 W CN 2019077140W WO 2020124798 A1 WO2020124798 A1 WO 2020124798A1
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Prior art keywords
substrate
color filter
filter substrate
display area
chip
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Ceased
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PCT/CN2019/077140
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English (en)
French (fr)
Inventor
苑春歌
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Publication of WO2020124798A1 publication Critical patent/WO2020124798A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars

Definitions

  • the present application relates to the technical field of display panels, in particular to a color filter substrate and a display panel using the color filter substrate.
  • a process is a cell forming process (Cell manufacturing process), that is, the thin film transistor array substrate and the color film substrate are bonded under a vacuum state to form a liquid crystal display panel plywood.
  • FIG. 1 is a schematic structural diagram of a conventional thin-film transistor array substrate and color filter substrate of a conventional liquid crystal display panel before bonding.
  • the thin-film transistor array substrate 1 is covered with a plurality of flip-chip thin films 11 on the surface facing the color filter substrate 2 in a flip-chip thin film binding area.
  • the color filter substrate 2 includes a base substrate 21 and a transparent conductive layer 22 formed on the base substrate.
  • Vacuum Aligner (Vacuum Aligner) is used in the Cell process System (abbreviated as VAS) forms a vacuum environment for vacuum laminating the thin film transistor array substrate 1 and the color filter substrate 2 so as to maintain the vacuum state in the obtained liquid crystal cell to facilitate subsequent liquid crystal alignment. Subsequently, the normal pressure environment is restored to complete the Cell manufacturing process, and the liquid crystal panel that has been attached is taken out.
  • VAS Cell process System
  • FIG. 2 is a structure of the liquid crystal panel 3 obtained after completing the Cell manufacturing process.
  • the color filter substrate 2 is deformed under the action of atmospheric pressure.
  • a plurality of spacers 12 are formed in the display area of the liquid crystal panel 3 to support the color filter substrate 2.
  • the spacer 12 cannot be formed in the bonding area of the flip-chip film due to the need to overlap the flip-chip film.
  • the flip-chip bonding area is usually set away from the display area, there is no spacer 12 around the flip-chip bonding area.
  • the transparent conductive layer 22 of the color filter substrate 2 facing the thin film transistor array substrate 1 is directly connected to the thin film
  • the plurality of flip-chip thin films 11 on the transistor array substrate 1 are in contact.
  • the transparent conductive layer 22 and the flip chip 11 are short-circuited, so that voltage cannot be applied to the liquid crystal cell And therefore cannot complete the liquid crystal alignment process.
  • the purpose of the present application is to provide a color film substrate and a display panel.
  • an insulating layer especially in the bonding area of the flip-chip thin film, the insulating layer is effectively prevented from overlapping the flip-chip on the thin film transistor array substrate There is a short circuit between the film and the color filter substrate.
  • a color filter substrate having a display area and a non-display area, and a flip-chip thin film binding area for overlapping a plurality of flip-chip films is provided in the non-display area;
  • the color filter substrate includes: a base substrate; a transparent conductive layer formed on the base substrate; and, a polyimide formed on the transparent conductive layer and located in the bonding region of the flip chip Imine film.
  • a color filter substrate including a display area and a non-display area, and a flip-chip thin film binding area for overlapping a plurality of flip-chip films is provided in the non-display area.
  • the color filter substrate is provided with an insulating layer in the bonding area of the flip chip.
  • the color filter substrate includes: a base substrate; and, a transparent conductive layer formed on the base substrate; wherein the insulating layer is formed on the transparent conductive layer.
  • the color filter substrate further includes: a color resist layer, the color resist layer is disposed between the base substrate and the transparent conductive layer, and includes a plurality of spaced color resist units; and , A black matrix layer, the black matrix layer is disposed between the base substrate and the transparent conductive layer, and includes a plurality of black matrices, the black is disposed between each two adjacent color resistance units matrix.
  • the insulating layer is also disposed in the display area.
  • the insulating layer is a polyimide film.
  • the insulating layer is not limited to the polyimide film, but can also be an insulating layer made of any suitable insulating material known in the art.
  • a display panel which includes an array substrate and a color film substrate disposed oppositely.
  • the display panel includes a display area and a non-display area, and a non-display area is provided with a flip-chip bonding area for overlapping a plurality of flip-chip films; the color filter substrate is bound to the flip-chip film
  • An insulating layer is formed on the surface within the fixed area and facing the array substrate.
  • the flip chip is overlapped on the array substrate.
  • the array substrate is provided with a plurality of metal traces for conductive connection with the flip-chip film in the bonding area of the flip-chip film and facing the color filter substrate.
  • the metal trace is overlapped on the array substrate.
  • a plurality of spacers are provided between the color filter substrate and the array substrate.
  • the color filter substrate forms the insulating layer on the surface of the display area facing the array substrate.
  • the insulating layer is a polyimide film.
  • FIG. 1 is a schematic structural diagram of a thin film transistor array substrate and a color filter substrate in the prior art before being bonded;
  • FIG. 2 is a schematic structural diagram of a liquid crystal panel obtained after the Cell manufacturing process in the prior art
  • FIG. 3 is a schematic structural diagram of the color filter substrate according to an embodiment of the present application.
  • FIG. 4 is a manufacturing flowchart of a liquid crystal display panel according to an embodiment of the present application.
  • FIGS. 5A to 5F are structural schematic diagrams corresponding to the flowchart shown in FIG. 4, wherein FIGS. 5A and 5B are structural schematic diagrams of the thin film transistor array substrate 200, and FIGS. 5C to 5E are schematic structural diagrams of the color filter substrate 100.
  • the first feature “above” or “below” the second feature may include the first and second features in direct contact, or may include the first and second features Not direct contact but contact through another feature between them.
  • the first feature is “above”, “above” and “above” the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below”, and “below” the second feature includes that the first feature is directly below and obliquely below the second feature, or simply means that the first feature is less horizontal than the second feature.
  • a color filter substrate 100 is provided, please refer to FIG. 3.
  • the preparation process of the color filter substrate 100 is shown in FIGS. 5C and 5D.
  • the color filter substrate 100 includes a display area 101 and a non-display area 102, and a plurality of flip-chip films (not shown) are provided in the non-display area 102 for overlapping.
  • the flip chip bonding area 103 is provided.
  • the color filter substrate 100 has the same necessary structure as the conventional color filter substrate in the art.
  • the color filter substrate 100 includes a base substrate 110, a color resist layer 120 and a black matrix layer 130 formed on the base substrate 110, and formed on the color resist The layer 120 and the black matrix layer 130 cover the transparent conductive layer 140 of the color resist layer 120 and the black matrix layer 130.
  • an insulating layer 150 is formed on the transparent conductive layer 140.
  • the insulating layer 150 is formed in the flip chip bonding region 103.
  • the insulating layer 150 is also formed on the transparent conductive layer 140 in the display area 101 of the color filter substrate 100.
  • the color resist layer 120 is disposed between the base substrate 110 and the transparent conductive layer 140, and includes a plurality of spaced color resist units 120a.
  • the black matrix layer 130 is disposed between the base substrate 110 and the transparent conductive layer 140, and includes a plurality of black matrix 130a, each two adjacent The black matrix 130a is disposed between the color resisting units 120a.
  • the color filter substrate 100 and a thin film transistor array substrate 200 can be laminated to make a liquid crystal display panel.
  • the manufacturing flow chart is shown in FIG. 4, and the structural schematic diagram in the manufacturing process is shown in FIGS. 5A to 5F.
  • the thin film transistor array substrate 200 shown in FIGS. 5A and 5B has a conventional structure known in the art, and for the sake of clarity, only the thin film transistor array substrate is shown in FIGS. 5A and 5B. 200 Structure related to this application. Also, for the purpose of clarity, only a partial structure of the color filter substrate 100 is shown in FIGS. 5C to 5E.
  • the manufacturing process of the liquid crystal display panel is as follows.
  • a thin film transistor array substrate 200 is first provided.
  • the thin film transistor array substrate 200 has a display area 201 and a non-display area 202.
  • the non-display area 202 is provided with a flip-chip thin film binding area 203 for overlapping a plurality of flip-chip films 204 (see FIG. 5F).
  • the thin film transistor array substrate 200 further has a plurality of thin film transistors arrayed on the base substrate and corresponding metal traces.
  • a liquid crystal aligning agent is coated on the display area 201 of the thin film transistor array substrate 200 to form an alignment film 210 for subsequent liquid crystal alignment.
  • the liquid crystal aligning agent is an agent known in the art.
  • the color filter substrate 100 is provided.
  • the color filter substrate 100 includes a display area 101 and a non-display area 102.
  • a flip-chip thin film binding area 103 for overlapping the flip-chip film 204 is provided in the non-display area 102. It can be understood that the flip-chip thin film binding region 103 of the color filter substrate 100 corresponds to the flip-chip thin film binding region 203 of the thin film transistor array substrate 200.
  • an insulating material is coated on the flip-chip bonding area 103 of the color filter substrate 100 to form an insulating layer 150.
  • the insulating material may be any insulating material known in the art suitable for display panels, such as but not limited to polyimide.
  • the insulating material may also be coated on the display area 201 of the color filter substrate 100 to form the insulating layer 150.
  • the thin film transistor array substrate 200 and the color filter substrate 100 undergo a Cell process to form a liquid crystal cell. Subsequently, liquid crystal is injected to form a liquid crystal layer 300 interposed between the thin film transistor array substrate 200 and the color filter substrate 100, as shown in FIG. 5F.
  • a plurality of conventional spacers 220 are provided between the thin film transistor array substrate 200 and the color filter substrate 100, as shown in FIG.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本申请提供一种彩膜基板及一显示面板。通过在所述彩膜基板非显示区内的覆晶薄膜绑定区内形成一绝缘层，防止搭接的覆晶薄膜与所述彩膜基板之间发生短接。

Description

彩膜基板及显示面板 技术领域
本申请涉及显示面板技术领域，特别涉及一种彩膜基板和应用该彩膜基板的显示面板。
 背景技术
在从计算机监视器、移动电话等到TV，液晶显示装置的用途逐渐广泛。在液晶显示面板的制作过程，有一道工序是成盒过程（Cell制程），即，将薄膜晶体管阵列基板和彩膜基板在真空状态下贴合，以形成液晶显示面板合板。
图1是一常规的液晶显示面板的薄膜晶体管阵列基板与彩膜基板在贴合前的结构示意图。如图1所示，所述薄膜晶体管阵列基板1在一覆晶薄膜绑定区内且面对所述彩膜基板2的表面上搭接有复数个覆晶薄膜11。所述彩膜基板2包括一衬底基板21及形成于所述衬底基板上的一透明导电层22。
在所述Cell制程中利用真空贴合设备(Vacuum Aligner System，简称VAS)形成真空环境，用以真空贴合薄膜晶体管阵列基板1与所述彩膜基板2，从而保持获得的液晶盒内的真空状态，以利于后续的液晶配向。随后，恢复常压环境以完成所述Cell制程，并取出贴合完成的液晶面板。
请参见图2，图2是完成所述Cell制程后获得的液晶面板3的结构。在从真空环境逐步转变为常压环境的破真空过程中，所述彩膜基板2在大气压的作用下产生形变。通常，通过在液晶面板3的显示区内形成复数个隔垫物(Spacer)12以支撑所述彩膜基板2。然而，在非显示区内，尤其是覆晶薄膜绑定区内，因需要搭接所述覆晶薄膜，使得所述覆晶薄膜绑定区内无法形成所述隔垫物12。并且，由于覆晶薄膜绑定区通常被设置为远离显示区，因而使得所述覆晶薄膜绑定区周围也无隔垫物12。
 技术问题
当所述彩膜基板2具有较大表面积时，如图2所示，所述彩膜基板2面朝所述薄膜晶体管阵列基板1一侧的透明导电层22直接与用于与搭接于薄膜晶体管阵列基板1上的所述复数个覆晶薄膜11接触。当在所述薄膜晶体管阵列基板1与所述彩膜基板2之间产生一电场以进行液晶配向时，所述透明导电层22与所述覆晶薄膜11发生短路，使得电压无法施加于液晶盒内，并因此无法完成液晶配向过程。
因而，需要一种新的液晶显示面板结构，以解决上述技术问题。
 技术解决方案
本申请的目的在于提供一种彩膜基板及显示面板，通过设置一绝缘层，尤其是在覆晶薄膜绑定区内设置所述绝缘层，有效防止搭接于薄膜晶体管阵列基板上的覆晶薄膜与彩膜基板之间发生短路的情况。
根据本申请的一方面，提供一种彩膜基板，具有显示区和非显示区，在所述非显示区内设有用于搭接复数个覆晶薄膜的覆晶薄膜绑定区；其中，所述彩膜基板包括：一衬底基板；形成于所述衬底基板上的一透明导电层；以及，形成于所述透明导电层上且位于所述覆晶薄膜绑定区内的一聚酰亚胺薄膜。
根据本申请的另一方面，提供一种彩膜基板，包括显示区和非显示区，在所述非显示区内设有一用于搭接复数个覆晶薄膜的覆晶薄膜绑定区。所述彩膜基板在所述覆晶薄膜绑定区内设置一绝缘层。
在一实施例中，所述彩膜基板包括：一衬底基板；以及，形成于所述衬底基板上的一透明导电层；其中，所述绝缘层形成于所述透明导电层上。
在一实施例中，所述彩膜基板还包括：一色阻层，所述色阻层设置于所述衬底基板与所述透明导电层之间，并包括复数个间隔的色阻单元；以及，一黑色矩阵层，所述黑色矩阵层设置于所述衬底基板与所述透明导电层之间，并包括复数个黑色矩阵，每两个相邻的色阻单元之间设置一所述黑色矩阵。
在一实施例中，所述绝缘层还被设置于所述显示区内。
在一实施例中，所述绝缘层为一聚酰亚胺薄膜。
当然，本领域技术人员可以理解的是，所述绝缘层不限于所述聚酰亚胺薄膜，还可以是由任何本领域已知的合适的绝缘材料制成的绝缘层。
根据本申请的另一方面，提供一种显示面板，包括相对设置的一阵列基板和一彩膜基板。所述显示面板包括显示区和非显示区，在所述非显示区内设有一用于搭接复数个覆晶薄膜的覆晶薄膜绑定区；所述彩膜基板在所述覆晶薄膜绑定区内且面对所述阵列基板的表面上形成一绝缘层。
在一实施例中，所述覆晶薄膜搭接于所述阵列基板上。例如，阵列基板在所述覆晶薄膜绑定区内且面对所述彩膜基板的表面上设置复数个用于与所述覆晶薄膜导电连接的金属走线，所述覆晶薄膜通过所述金属走线搭接于所述阵列基板上。
在一实施例中，所述彩膜基板和所述阵列基板之间设置复数个隔垫物。
在一实施例中，所述彩膜基板在所述显示区内且面对所述阵列基板的表面上形成所述绝缘层。
在一实施例中，所述绝缘层为一聚酰亚胺薄膜。
 有益效果
在本申请中，通过在所述彩膜基板的透明导电层上形成一绝缘层，尤其是在位于覆晶薄膜绑定区内的所述透明导电层上形成所述绝缘层，有效地避免了因Cell制程的破真空过程中，因所述彩膜基板的形变而造成的所述彩膜基板的透明导电层与搭接于薄膜晶体管阵列基板上的覆晶薄膜之间的短接问题。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中薄膜晶体管阵列基板与彩膜基板未贴合前的结构示意图；
图2为现有技术中Cell制程后获得的液晶面板的结构示意图；
图3为根据本申请一实施例的所述彩膜基板的结构示意图；
图4为根据本申请一实施例的液晶显示面板的制造流程图；
图5A至5F为与图4所示流程图相对应的结构示意图，其中，图5A和图5B为薄膜晶体管阵列基板200的结构示意图，图5C至图5E为彩膜基板100的结构示意图。
 本发明的实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
在本实施例中提供一种彩膜基板100，请参见图3。所述彩膜基板100的制备过程如图5C和图5D所示。如图3和图5C所示，所述彩膜基板100包括显示区101和非显示区102，在所述非显示区102内设有用于搭接复数个覆晶薄膜（图中未示）的覆晶薄膜绑定区103。
本领域技术人员可以理解的是，所述彩膜基板100具有与本领域常规彩膜基板的相同的必要结构。例如，如图3所示，所述彩膜基板100包括：一衬底基板110，形成于所述衬底基板110上的色阻层120和黑色矩阵层130，以及，形成于所述色阻层120及黑色矩阵层130之上并覆盖所述色阻层120及黑色矩阵层130的透明导电层140。如图3所示，在所述透明导电层140上形成一绝缘层150，尤其是，如图5D所示，在所述覆晶薄膜绑定区103内形成所述绝缘层150。
当然，在另一实施例中，如图5E所示，在所述彩膜基板100的所述显示区101内，在所述透明导电层140上也形成所述绝缘层150。
在本实施例中，如图3所示，所述色阻层120设置于所述衬底基板110与所述透明导电层140之间，并包括复数个间隔的色阻单元120a。
在本实施例中，如图3所示，所述黑色矩阵层130设置于所述衬底基板110与所述透明导电层140之间，并包括复数个黑色矩阵130a，每两个相邻的色阻单元120a之间设置一个所述黑色矩阵130a。
可以将所述彩膜基板100与一薄膜晶体管阵列基板200贴合以制成一液晶显示面板，制造流程图请见图4，制造流程中的结构示意图请见图5A至图5F。本领域技术人员可以知晓的是，图5A和5B中所示的薄膜晶体管阵列基板200具有本领域已知的常规结构，为了清晰的目的，图5A和5B中仅显示了所述薄膜晶体管阵列基板200与本申请有关的结构。同样，为了清晰的目的，在图5C至图5E中仅显示了所述彩膜基板100的部分结构。
所述液晶显示面板的制造流程具体如下。
如图4及图5A所示，首先提供一薄膜晶体管阵列基板200，所述薄膜晶体管阵列基板200具有一显示区201和一非显示区202。所述非显示区202内设有用于搭接复数个覆晶薄膜204（见图5F）的覆晶薄膜绑定区203。本领域技术人员可以理解的是，所述薄膜晶体管阵列基板200还具有阵列于衬底基板上的复数个薄膜晶体管及相应的金属走线。
如图4及图5B所示，在所述薄膜晶体管阵列基板200的所述显示区201上涂布液晶取向剂以形成配向膜210，用于后续的液晶配向。所述液晶取向剂为本领域已知的试剂。
如图4及图5C所示，提供所述彩膜基板100，所述彩膜基板100包括显示区101和非显示区102。在所述非显示区102内设有用于搭接所述覆晶薄膜204（见图5F）的覆晶薄膜绑定区103。可以理解的是，所述彩膜基板100的所述覆晶薄膜绑定区103对应于所述薄膜晶体管阵列基板200的所述覆晶薄膜绑定区203。
如图4及图5D所示，在所述彩膜基板100的所述覆晶薄膜绑定区103上涂布一绝缘材料以形成一绝缘层150。所述绝缘材料可以是本领域已知的适用于显示面板的任何绝缘材料，例如但不限于聚酰亚胺。
当然，如图5E所示，在另一实施例中，也可以在所述彩膜基板100的所述显示区201上也涂布所述绝缘材料以形成所述绝缘层150。
接着，如图4及图5F所示，在所述薄膜晶体管阵列基板200的覆晶薄膜绑定区203（见图5B）搭接覆晶薄膜（COF）204后，对所述薄膜晶体管阵列基板200与所述彩膜基板100进行Cell制程以形成液晶盒。随后，注入液晶以形成夹设于所述薄膜晶体管阵列基板200与所述彩膜基板100之间的一液晶层300，如图5F所示。当然，所述薄膜晶体管阵列基板200与所述彩膜基板100之间设置有常规的复数个隔垫物220，如图5F所示，在完成所述Cell制程后，即使是所述彩膜基板100在从真空环境逐步转变为常压环境的破真空过程中因大气压的作用而产生形变，由于设置了所述绝缘层150，因而不会发生透明导电层140与COF204的短接问题。
本申请已由上述相关实施例加以描述，然而上述实施例仅为实施本申请的范例。必需指出的是，已公开的实施例并未限制本申请的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本申请的范围内。
 工业实用性
本申请的主体可以在工业中制造和使用，具备工业实用性。

Claims (13)

  1. 一种彩膜基板，具有显示区和非显示区，其中，
    在所述非显示区内设有用于搭接复数个覆晶薄膜的覆晶薄膜绑定区，并且，
    所述彩膜基板包括：
    一衬底基板；
    形成于所述衬底基板上的一透明导电层；以及，
    形成于所述透明导电层上且位于所述覆晶薄膜绑定区内的一聚酰亚胺薄膜。
  2. 如权利要求1所述的彩膜基板，其中，所述聚酰亚胺薄膜还被设置于所述显示区内。
  3. 如权利要求2所述的彩膜基板，还包括：
    一色阻层，所述色阻层设置于所述衬底基板与所述透明导电层之间，并包括复数个间隔的色阻单元；以及，
    一黑色矩阵层，所述黑色矩阵层设置于所述衬底基板与所述透明导电层之间，并包括复数个黑色矩阵，每两个相邻的色阻单元之间设置一所述黑色矩阵。
  4. 一种彩膜基板，包括显示区和非显示区，其中，在所述非显示区内设有用于搭接复数个覆晶薄膜的覆晶薄膜绑定区；所述彩膜基板在所述覆晶薄膜绑定区内设置一绝缘层。
  5. 如权利要求4所述的彩膜基板，包括：
    一衬底基板；以及
    形成于所述衬底基板上的一透明导电层；其中，所述绝缘层形成于所述透明导电层上。
  6. 如权利要求5所述的彩膜基板，其特征在于，所述彩膜基板还包括：
    一色阻层，所述色阻层设置于所述衬底基板与所述透明导电层之间，并包括复数个间隔的色阻单元；以及，
    一黑色矩阵层，所述黑色矩阵层设置于所述衬底基板与所述透明导电层之间，并包括复数个黑色矩阵，每两个相邻的色阻单元之间设置一所述黑色矩阵。
  7. 如权利要求4所述的彩膜基板，其特征在于，所述绝缘层还被设置于所述显示区内。
  8. 如权利要求4所述的彩膜基板，其特征在于，所述绝缘层为一聚酰亚胺薄膜。
  9. 一种显示面板，包括相对设置的一阵列基板和一彩膜基板，其特征在于，所述显示面板包括显示区和非显示区，在所述非显示区内设有一用于搭接复数个覆晶薄膜的覆晶薄膜绑定区；
    所述彩膜基板在所述覆晶薄膜绑定区内且面对所述阵列基板的表面上形成一绝缘层。
  10. 如权利要求9所述的显示面板，其特征在于，所述覆晶薄膜搭接于所述阵列基板上。
  11. 如权利要求9所述的显示面板，其特征在于，所述彩膜基板和所述阵列基板之间设置复数个隔垫物。
  12. 如权利要求9所述的显示面板，其特征在于，所述彩膜基板在所述显示区内且面对所述阵列基板的表面上也形成有所述绝缘层。
  13. 如权利要求9所述的显示面板，其特征在于，所述绝缘层为一聚酰亚胺薄膜。
PCT/CN2019/077140 2018-12-18 2019-03-06 彩膜基板及显示面板 Ceased WO2020124798A1 (zh)

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