WO2020122506A3 - 금속막 형성용 전구체 조성물, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자. - Google Patents

금속막 형성용 전구체 조성물, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자. Download PDF

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Publication number
WO2020122506A3
WO2020122506A3 PCT/KR2019/017151 KR2019017151W WO2020122506A3 WO 2020122506 A3 WO2020122506 A3 WO 2020122506A3 KR 2019017151 W KR2019017151 W KR 2019017151W WO 2020122506 A3 WO2020122506 A3 WO 2020122506A3
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WO
WIPO (PCT)
Prior art keywords
metal film
same
forming
precursor composition
semiconductor device
Prior art date
Application number
PCT/KR2019/017151
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English (en)
French (fr)
Other versions
WO2020122506A2 (ko
Inventor
홍창성
박용주
오태훈
황인천
이상경
김동현
Original Assignee
에스케이트리켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020190160118A external-priority patent/KR20200072407A/ko
Application filed by 에스케이트리켐 주식회사 filed Critical 에스케이트리켐 주식회사
Priority to JP2021531889A priority Critical patent/JP7262912B2/ja
Priority to SG11202104157QA priority patent/SG11202104157QA/en
Priority to CN201980079464.7A priority patent/CN113423862B/zh
Priority to US17/288,604 priority patent/US11972941B2/en
Publication of WO2020122506A2 publication Critical patent/WO2020122506A2/ko
Publication of WO2020122506A3 publication Critical patent/WO2020122506A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)

Abstract

본 발명은 금속막 형성용 전구체 조성물에 관한 것으로서, 화학식 1 내지 화학식 3 중 어느 하나로 표시되는 지르코늄 화합물 및 화학식 4 내지 화학식 6 중 어느 하나로 표시되는 하프늄 화합물을 포함하는 것을 특징으로 한다.
PCT/KR2019/017151 2018-12-12 2019-12-06 금속막 형성용 전구체 조성물, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자. WO2020122506A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021531889A JP7262912B2 (ja) 2018-12-12 2019-12-06 金属膜形成用前駆体組成物、これを用いた金属膜形成方法、及び前記金属膜を含む半導体素子
SG11202104157QA SG11202104157QA (en) 2018-12-12 2019-12-06 Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film
CN201980079464.7A CN113423862B (zh) 2018-12-12 2019-12-06 金属膜形成用前驱体组合物、利用其的金属膜形成方法、半导体元件以及晶体管
US17/288,604 US11972941B2 (en) 2018-12-12 2019-12-06 Precursor solution for thin film deposition and thin film forming method using same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20180159668 2018-12-12
KR10-2018-0159668 2018-12-12
KR1020190160118A KR20200072407A (ko) 2018-12-12 2019-12-04 금속막 형성용 전구체 조성물, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자.
KR10-2019-0160118 2019-12-04

Publications (2)

Publication Number Publication Date
WO2020122506A2 WO2020122506A2 (ko) 2020-06-18
WO2020122506A3 true WO2020122506A3 (ko) 2020-07-30

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PCT/KR2019/017151 WO2020122506A2 (ko) 2018-12-12 2019-12-06 금속막 형성용 전구체 조성물, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자.

Country Status (2)

Country Link
JP (1) JP7262912B2 (ko)
WO (1) WO2020122506A2 (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010098415A (ko) * 2000-04-20 2001-11-08 포만 제프리 엘 전구체 소스 혼합물, 필름의 침착 방법 및 구조체의 제조방법
KR20100016477A (ko) * 2007-04-12 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Ａｌｄ/ｃｖｄ용의 지르코늄, 하프늄, 티타늄 및 규소 전구체
JP2014510733A (ja) * 2011-03-15 2014-05-01 メカロニックス シーオー． エルティディ． 新規な４ｂ族有機金属化合物及びその製造方法
KR20140078534A (ko) * 2012-12-17 2014-06-25 솔브레인씨그마알드리치 유한회사 금속 전구체 및 이를 이용하여 제조된 금속 함유 박막
KR20160000392A (ko) * 2014-06-24 2016-01-04 솔브레인씨그마알드리치 유한회사 박막 형성용 조성물

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007140813A1 (en) * 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US8563085B2 (en) * 2009-08-18 2013-10-22 Samsung Electronics Co., Ltd. Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
JP6042415B2 (ja) * 2012-04-05 2016-12-14 東京エレクトロン株式会社 半導体デバイスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010098415A (ko) * 2000-04-20 2001-11-08 포만 제프리 엘 전구체 소스 혼합물, 필름의 침착 방법 및 구조체의 제조방법
KR20100016477A (ko) * 2007-04-12 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Ａｌｄ/ｃｖｄ용의 지르코늄, 하프늄, 티타늄 및 규소 전구체
JP2014510733A (ja) * 2011-03-15 2014-05-01 メカロニックス シーオー． エルティディ． 新規な４ｂ族有機金属化合物及びその製造方法
KR20140078534A (ko) * 2012-12-17 2014-06-25 솔브레인씨그마알드리치 유한회사 금속 전구체 및 이를 이용하여 제조된 금속 함유 박막
KR20160000392A (ko) * 2014-06-24 2016-01-04 솔브레인씨그마알드리치 유한회사 박막 형성용 조성물

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Publication number Publication date
WO2020122506A2 (ko) 2020-06-18
JP2022511849A (ja) 2022-02-01
JP7262912B2 (ja) 2023-04-24

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